A method and system for characterizing microparticle accumulation thickness
Through laser-induced breakdown spectroscopy technology, a calibration curve was established using laser plasma emission spectrum data, which solved the problem of accurate characterization of microparticle accumulation thickness in fields such as Mars exploration and achieved fast, non-contact measurement of microparticle accumulation thickness.
Patent Information
- Application Number
- CN202211707535.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-27
- Publication Date
- 2025-09-12
- Estimated Expiration
- 2042-12-27
AI Technical Summary
Existing methods for measuring the thickness of microparticle accumulation are not suitable for environments that are difficult to approach or cannot be reached, such as the field of Mars exploration, and cannot achieve accurate characterization of the thickness of microparticle accumulation.
Laser-induced breakdown spectroscopy technology is used to irradiate microparticle deposits with pulsed laser to obtain the emission spectrum data of laser plasma. The characteristic parameters are selected for comparison and a calibration curve is established to achieve quantitative measurement of the thickness of microparticle deposits.
It achieves the advantages of no sample preparation, fast analysis speed, simultaneous analysis of multiple elements, and in-situ online non-contact detection, and is suitable for the characterization of microparticle accumulation thickness in environments that are difficult to approach or cannot be reached.
Smart Images
Figure CN116008256B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of laser induced breakdown spectroscopy, and in particular to a method and system for characterizing the thickness of microparticle accumulation. Background Art
[0002] The problem of microparticle accumulation is relevant to many fields related to the national economy (such as food processing, mining, precision manufacturing, and biopharmaceuticals) and in-situ exploration of extraterrestrial planets (such as wind-blown sand accumulation). In some of these fields, quantitative characterization and control of microparticle accumulation thickness is of great significance. A typical example is that during the Zhurong Mars rover's landing and exploration mission, a thin layer of dust and sand particles accumulated on the rover's solar panels due to windy and dusty weather. Dynamically quantifying the dust accumulation thickness can accurately assess the dynamic performance of the solar panels, thereby precisely controlling the activation time of the rover's active dust removal mode to ensure the rover's charging efficiency. Therefore, in order to accurately control the activation time of the rover's active dust removal mode, it is urgently necessary to develop and design a microparticle accumulation thickness characterization method suitable for specific application areas. By dynamically quantifying the dust accumulation thickness, it is possible to accurately assess the dynamic performance of the solar panels and thus precisely control the activation time of the rover's active dust removal mode.
[0003] Currently, there are numerous methods for measuring microparticle accumulation thickness, including traditional methods such as wave characteristics, mechanical methods, and inductive methods, as well as more recently developed methods such as data image processing. Based on these methods, numerous measurement devices with varying operating principles have been developed and produced, and they have played or are currently playing an important role in various fields.
[0004] However, existing traditional measurement methods for characterizing microparticle accumulation thickness, such as wave characteristics, mechanical methods, inductive methods, and data image processing measurements, are not suitable for completing the task of characterizing microparticle accumulation thickness in inaccessible or unreachable environments, such as those involved in Mars exploration. Since 2004, laser-induced breakdown spectroscopy has been hailed as the "superstar of the future analytical detection field." As an emerging material composition analysis technology, it has many advantages, such as no sample preparation required, fast analysis speed, simultaneous multi-element analysis, and in-situ non-contact detection. It has already found substantial application in industrial process monitoring, in-situ Mars exploration, and other fields. However, its application in characterizing microparticle accumulation thickness has not yet been reported. Summary of the Invention
[0005] The present invention aims to overcome the problems of the above-mentioned existing traditional measurement methods such as wave characteristic method, mechanical method, electric induction method, and data image processing measurement to characterize the thickness of microparticle accumulation, which are not suitable for completing the characterization task of microparticle accumulation thickness in environments that are inaccessible or inaccessible, such as those involved in the field of Mars exploration. A method and system for characterizing the thickness of microparticle accumulation is provided.
[0006] In order to solve the above technical problems, the technical solutions of the present invention are as follows:
[0007] A method for characterizing microparticle stacking thickness comprises the steps of:
[0008] S10. Irradiating a plurality of microparticle deposit samples of different stacking thicknesses by pulsed laser to obtain emission spectrum data of the laser plasma of each microparticle deposit sample;
[0009] S20. Selecting comparison characteristic parameters from the emission spectrum data, using the accumulation thickness data of the microparticle deposit sample and the comparison characteristic parameter data as the horizontal and vertical coordinates to establish a calibration curve;
[0010] S30. Irradiate the microparticle accumulation to be measured by pulsed laser, obtain the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured, extract the corresponding comparison characteristic parameters, compare the comparison characteristic parameters with the calibration curve, and quantify the accumulation thickness information of the microparticle accumulation to be measured.
[0011] Furthermore, as a preferred technical solution, the selection of the comparison feature parameters in step S20 is specifically as follows:
[0012] A spectral characteristic parameter having a one-to-one correspondence between the emission spectrum data and the accumulation thickness of the micro-particle accumulation sample is selected and used as a comparison characteristic parameter.
[0013] Furthermore, as a preferred technical solution, the microparticle accumulation is formed by accumulation of microparticles of the same type.
[0014] Furthermore, as a preferred technical solution, the comparison characteristic parameter is the emission intensity of the spectral line;
[0015] The calibration curve is a calibration curve of microparticle accumulation thickness established by taking the emission intensity of the spectrum line as the ordinate and the microparticle accumulation thickness as the abscissa.
[0016] Furthermore, as a preferred technical solution, the comparison characteristic parameter is the width of the spectral line;
[0017] The calibration curve is a calibration curve of microparticle accumulation thickness established by taking the width of the spectrum line as the vertical coordinate and the microparticle accumulation thickness as the horizontal coordinate.
[0018] Furthermore, as a preferred technical solution, the comparison characteristic parameter is the ratio of the intensities of the two characteristic spectral lines;
[0019] The calibration curve is a calibration curve of microparticle accumulation thickness established by taking the ratio of the two characteristic spectral line intensities as the ordinate and the microparticle accumulation thickness as the abscissa.
[0020] Furthermore, as a preferred technical solution, step S10 specifically includes:
[0021] The focused pulse laser provided by the LIBS device under constant working parameters is used to irradiate multiple microparticle accumulation samples with different accumulation thicknesses to generate laser plasma.
[0022] Furthermore, as a preferred technical solution, the acquisition of the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured in step S30 specifically includes:
[0023] The focused pulse laser provided under the working parameters of the LIBS device used in the process of establishing the calibration curve is used to irradiate the microparticle accumulation to be measured, so as to obtain the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured.
[0024] Furthermore, as a preferred technical solution, the operating parameters of the LIBS device include laser wavelength, laser pulse energy, spectrometer acquisition time, and the distance from the focal plane to the surface of the microparticle accumulation sample.
[0025] A characterization system for microparticle accumulation thickness, comprising:
[0026] LIBS equipment is used to provide focused pulsed laser light to irradiate the surface of multiple microparticle deposit samples with different stacking thicknesses, generating laser plasma through laser ablation;
[0027] The calculation module obtains the emission spectrum data of the laser plasma of multiple micro-particle deposit samples with different stacking thicknesses, analyzes the obtained emission spectrum data, selects the spectral characteristic parameters that have a one-to-one correspondence between the emission spectrum data and the stacking thickness of the micro-particle deposit as the comparison characteristic parameters, and establishes a calibration curve of the micro-particle stacking thickness with the comparison characteristic parameters as the vertical coordinate and the micro-particle stacking thickness as the horizontal coordinate.
[0028] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
[0029] The method for characterizing the microparticle accumulation thickness of the present invention is based on laser-induced breakdown spectroscopy technology. As an emerging material composition analysis technology, this technology has many advantages, such as no need for sample preparation, fast analysis speed, simultaneous analysis of multiple elements, and in-situ online non-contact detection. It has already found substantial application in fields such as industrial process monitoring and in-situ exploration of Mars. Therefore, the method for characterizing the microparticle accumulation thickness proposed in the present invention has many advantages, such as no need for sample preparation, fast analysis speed, simultaneous analysis of multiple elements, and in-situ online non-contact detection. It is suitable for quickly completing the task of characterizing the microparticle accumulation thickness in environments where workers are not suitable or cannot reach. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Figure 1 Schematic diagram of the process for characterizing the microparticle stacking thickness described in Example 1 of the present invention.
[0031] Figure 2 This is the micro-particle accumulation thickness calibration curve and test results established in Example 2 of the present invention using the emission intensity of the copper atomic spectral line as the comparison characteristic parameter.
[0032] Figure 3 This is the micro-particle accumulation thickness calibration curve and test results established by using the width of the copper atomic spectral line as the comparison characteristic parameter in Example 3 of the present invention.
[0033] Figure 4 This is the micro-particle stacking thickness calibration curve and test results established in Example 4 of the present invention using the ratio of the two characteristic spectral line intensities of copper atoms as the comparison characteristic parameter.
[0034] The accompanying drawings are for illustrative purposes only and should not be construed as limitations on this patent. To better illustrate this embodiment, some components of the accompanying drawings may be omitted, enlarged, or reduced in size and do not represent the actual dimensions of the product. For those skilled in the art, it is understandable that some well-known structures and their descriptions may be omitted from the accompanying drawings. The same or similar reference numerals correspond to the same or similar components. The terms describing positional relationships in the accompanying drawings are for illustrative purposes only and should not be construed as limitations on this patent. DETAILED DESCRIPTION
[0035] The preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby more clearly defining the protection scope of the present invention.
[0036] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting this patent.
[0037] In addition, if terms such as "first" and "second" are used for descriptive purposes only, they are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components, and cannot be understood as indicating or implying relative importance.
[0038] Example 1
[0039] This embodiment is intended to overcome the problems that the above-mentioned existing traditional measurement methods such as wave characteristic method, mechanical method, electric induction method, and data image processing measurement are not suitable for completing the characterization task of microparticle accumulation thickness in environments that are inaccessible or unreachable, such as those involved in the field of Mars exploration. A method for characterizing microparticle accumulation thickness is disclosed, which is based on laser induced breakdown spectroscopy technology. As an emerging material composition analysis technology, this technology has many advantages such as no need for sample preparation, fast analysis speed, multi-element simultaneous analysis, in-situ online non-contact detection, etc., and has already had substantial applications in industrial process monitoring, Mars in-situ exploration and other fields.
[0040] This embodiment discloses a method for characterizing the thickness of microparticles, such as Figure 1 As shown, the steps include:
[0041] S10. Irradiate multiple microparticle deposit samples with different stacking thicknesses with pulsed laser respectively to obtain emission spectrum data of the laser plasma of each microparticle deposit sample.
[0042] In this step, a set of standard samples needs to be prepared first, that is, a set of micro-particle deposits with the same material and different deposit thicknesses are prepared as standard samples.
[0043] The specific operation is as follows: prepare n sample boxes with different filling depths, gently pour the same type of microparticles into each sample box until the filling height exceeds the upper surface of the sample box, then use a scraper to gently scrape off the microparticles above the sample box to make the surface of each sample flat, and then prepare n microparticle accumulation samples with different accumulation thicknesses, which are marked as S1, S2, S3...S n , forming a set of microparticle accumulation sample sets.
[0044] The operating parameters of the LIBS equipment were optimized, including laser wavelength, laser pulse energy, spectrometer acquisition time, and the distance from the focal plane to the surface of the microparticle accumulation sample, to select a set of operating parameters that can obtain reliable emission spectrum data.
[0045] Therefore, this step is specifically as follows: using the focused pulse laser provided by the LIBS device under constant operating parameters to irradiate multiple microparticle deposit samples with different stacking thicknesses to generate laser plasma, thereby obtaining the emission spectrum data corresponding to the laser plasma of each microparticle deposit sample.
[0046] S20. Select comparison characteristic parameters from the emission spectrum data, and establish a calibration curve using the accumulation thickness data of the micro-particle accumulation sample and the comparison characteristic parameter data as horizontal and vertical coordinates.
[0047] This step is specifically as follows: analyzing the emission spectrum data corresponding to the laser plasma of each microparticle deposit sample, selecting the spectral characteristic parameters that have a one-to-one correspondence between the emission spectrum data and the accumulation thickness of the microparticle deposit sample, using the spectral characteristic parameters as the comparison characteristic parameters, and then using the accumulation thickness data of the microparticle deposit sample and the comparison characteristic parameter data as the horizontal and vertical coordinates to establish a calibration curve.
[0048] In this embodiment, the comparison characteristic parameter may be the emission intensity of the spectral line, the width of the spectral line, or the ratio of the intensities of two characteristic spectral lines.
[0049] When the emission intensity of the spectrum line is selected as the comparison characteristic parameter, the calibration curve is a calibration curve of microparticle accumulation thickness established with the emission intensity of the spectrum line as the ordinate and the microparticle accumulation thickness as the abscissa.
[0050] When the width of the spectrum line is selected as the comparison characteristic parameter, the calibration curve is a calibration curve of microparticle accumulation thickness established with the width of the spectrum line as the ordinate and the microparticle accumulation thickness as the abscissa.
[0051] When the comparison characteristic parameter is the ratio of the two characteristic line intensities, the calibration curve is a calibration curve of microparticle accumulation thickness established with the ratio of the two characteristic line intensities as the ordinate and the microparticle accumulation thickness as the abscissa.
[0052] In this step, the emission spectrum data selects the emission intensity of the spectrum line, the width of the spectrum line or the ratio of the intensities of two characteristic spectrum lines to characterize the thickness of the microparticle accumulation, thereby realizing the detection of the unknown microparticle accumulation thickness.
[0053] Since the emission spectrum data also includes spectral parameters defined by other methods, such as plasma temperature, electron density, and multi-spectral parameters selected with the help of machine learning, it is also possible to characterize the thickness of microparticle accumulation. Therefore, any emission spectrum data extracted using LIBS technology that can characterize the thickness of microparticle accumulation is included in the scope of this embodiment.
[0054] S30. Irradiate the microparticle accumulation to be measured by pulsed laser, obtain the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured, extract the corresponding comparison characteristic parameters, compare the comparison characteristic parameters with the calibration curve, and quantify the accumulation thickness information of the microparticle accumulation to be measured.
[0055] This step is based on the established calibration curve to obtain the accumulation thickness value of the micro-particle accumulation to be measured.
[0056] Specifically, the focused pulse laser provided by the LIBS equipment used in the process of establishing the calibration curve is used to irradiate the microparticle accumulation to obtain the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured, and the corresponding comparison characteristic parameters are extracted from it. The comparison characteristic parameters are compared with the calibration curve to quantify the accumulation thickness information of the microparticle accumulation to be measured.
[0057] The method for characterizing the thickness of microparticle accumulation proposed in this embodiment has many advantages, such as no need for sample preparation, fast analysis speed, simultaneous analysis of multiple elements, and in-situ online non-contact detection. It is suitable for quickly completing the task of characterizing the thickness of microparticle accumulation in environments where workers are not suitable or cannot reach.
[0058] Example 2
[0059] This embodiment discloses a method for characterizing the thickness of microparticle stacking, and illustrates the method for characterizing the thickness of microparticle stacking based on Example 1.
[0060] In this embodiment, the micro-particle deposit is a copper particle deposit, and the comparison characteristic parameter is the emission intensity of the copper atomic spectrum line. Therefore, the calibration curve is a calibration curve of the copper particle deposit thickness established with the emission intensity of the copper atomic spectrum line as the vertical coordinate and the copper particle deposit thickness as the horizontal coordinate.
[0061] The specific implementation process of this embodiment is as follows:
[0062] Sample preparation: Prepare four rectangular sample boxes with the same length and width (90×90 mm²) but different filling depths: H1 = 0.2 mm, H2 = 0.4 mm, H3 = 0.6 mm, and H4 = 0.8 mm. Gently pour dry spherical copper particles with a particle size of (72 ± 20) μm into each of the four prepared sample boxes. The initial filling height is slightly higher than the upper surface of the sample box. Afterwards, use a scraper to gently scrape off the particles that exceed the upper surface of the sample box to make each sample surface smooth. Four standard copper particle stacking samples with known stacking thicknesses are prepared, which are recorded as S1, S2, S3, and S4.
[0063] Obtain emission spectrum data from the LIBS device: Place four samples sequentially on the sample stage of the LIBS device, and obtain LIBS emission spectrum data from each sample using the constant operating parameters of the LIBS device.
[0064] The operating parameters of the LIBS equipment were set as follows: laser wavelength of 1064 nm, laser pulse width of 7 ns, laser pulse energy of 150 mJ, laser repetition rate of 1 Hz, distance from the focal plane to the sample surface of 15 mm, spectrum acquisition time window of 1 μs delay, spectrum acquisition time window of 1 μs width, and sample movement speed of 7 mm / s.
[0065] Extraction of comparison characteristic parameters: Analyze the LIBS emission spectrum data of the above four samples, extract the emission intensity of the Cu I:510.55nm line in the LIBS emission spectrum data of the four samples, and record it as I n (n=1, 2, 3, 4) as the comparison feature parameters.
[0066] Establish calibration curve: Set sample S n (n=1, 2, 4) are “known” samples, with a copper particle stacking thickness of H n (n=1, 2, 4) is the horizontal axis, and the emission intensity I of the Cu I:510.55nm line is n (n=1, 2, 4) as the vertical coordinate, establish a calibration curve for the copper particle accumulation thickness, such as Figure 2 shown.
[0067] Test results: Taking sample S3 as the "unknown" sample, the emission intensity I3 of the Cu I:510.55nm line corresponding to the "unknown" sample obtained under the same LIBS equipment working parameters is also presented in Figure 2 middle.
[0068] By comparing the I3 value with the calibration curve established above, it is found that the predicted value of the stacking thickness is well consistent with its true value of 0.6 mm within the error range.
[0069] Example 3
[0070] This embodiment discloses a method for characterizing the thickness of microparticle stacking, and illustrates the method for characterizing the thickness of microparticle stacking based on Example 2.
[0071] The difference between this embodiment and embodiment 2 lies in the different selected comparison feature parameters.
[0072] In this embodiment, the comparison characteristic parameter is the width of the copper atomic spectrum line. Therefore, the calibration curve is a calibration curve of copper particle accumulation thickness established with the width of the copper atomic spectrum line as the vertical coordinate and the copper particle accumulation thickness as the horizontal coordinate.
[0073] The specific implementation process of this embodiment is as follows:
[0074] The preparation of samples and acquisition of emission spectrum data of the LIBS device are described in Example 2, which will not be repeated in this example.
[0075] Extraction of comparison characteristic parameters: The LIBS emission spectrum data of the four samples were analyzed, and the line widths of the Cu I: 510.55 nm line in the LIBS emission spectrum data corresponding to these four samples were extracted and recorded as W1, W2, W3, and W4 as comparison characteristic parameters.
[0076] Establish calibration curve: Set sample S n (n=1, 2, 4) are “known” samples, with H n (n=1, 2, 4) as the horizontal axis, W n (n=1, 2, 4) as the vertical coordinate, establish a calibration curve for the copper particle accumulation thickness, such as Figure 3 shown.
[0077] Test results: Take S3 as the "unknown" sample, and its corresponding characteristic line width W3 value is also presented in Figure 3 By comparing the W3 value with the established calibration curve, it was found that the predicted value of the stacking thickness was in good agreement with its true value of 0.6 mm within the error range.
[0078] Example 4
[0079] This embodiment discloses a method for characterizing the thickness of microparticle stacking, and illustrates the method for characterizing the thickness of microparticle stacking based on Example 2.
[0080] The difference between this embodiment and embodiment 2 lies in the different selected comparison feature parameters.
[0081] In this embodiment, the comparison characteristic parameter is the ratio of the two characteristic spectral line intensities of copper atoms. Therefore, the calibration curve is a calibration curve of copper particle accumulation thickness established with the ratio of the two characteristic spectral line intensities of copper atoms as the vertical coordinate and the copper particle accumulation thickness as the horizontal coordinate.
[0082] The specific implementation process of this embodiment is as follows:
[0083] The preparation of samples and acquisition of emission spectrum data of the LIBS device are described in Example 2, which will not be repeated in this example.
[0084] Extraction of comparison characteristic parameters: The LIBS emission spectrum data of the four samples were analyzed, and the spectral intensity ratios of Cu I: 510.55 nm and Cu II: 218.96 nm were extracted from the corresponding LIBS emission spectrum data of the four samples, respectively, and recorded as R1, R2, R3, and R4, which were used as comparison characteristic parameters.
[0085] Establish calibration curve: Set sample S n (n=1, 2, 4) are “known” samples, with H n (n=1, 2, 4) as the horizontal axis, R n (n=1, 2, 4) as the vertical coordinate, establish a calibration curve for the copper particle accumulation thickness, such as Figure 4 shown.
[0086] Test results: Taking S3 as the "unknown" sample, the ratio of the two characteristic line intensities R3 is also presented in Figure 4 By comparing the R3 value with the established calibration curve, it was found that the predicted value of the stacking thickness was in good agreement with its true value of 0.6 mm within the error range.
[0087] Example 5
[0088] This embodiment discloses a system for characterizing the thickness of microparticle accumulation. The system adopts a method for characterizing the thickness of microparticle accumulation described in any one of Examples 1 to 4 to realize the characterization of the thickness of microparticle accumulation. The system has many advantages such as no need for sample preparation, fast analysis speed, simultaneous analysis of multiple elements, and in-situ online non-contact detection. It is suitable for quickly completing the task of characterizing the thickness of microparticle accumulation in an environment where workers are not suitable to approach or cannot reach.
[0089] A microparticle accumulation thickness characterization system of this embodiment includes: a LIBS device and a calculation module.
[0090] LIBS equipment is used to provide focused pulsed laser light to irradiate the surface of multiple microparticle deposit samples with different stacking thicknesses, generating laser plasma through laser ablation;
[0091] The calculation module obtains the emission spectrum data of the laser plasma of multiple micro-particle deposit samples with different stacking thicknesses, analyzes the obtained emission spectrum data, selects the spectral characteristic parameters that have a one-to-one correspondence between the emission spectrum data and the stacking thickness of the micro-particle deposit as the comparison characteristic parameters, and establishes a calibration curve of the micro-particle stacking thickness with the comparison characteristic parameters as the vertical coordinate and the micro-particle stacking thickness as the horizontal coordinate.
[0092] In this embodiment, the preparation of microparticle deposit samples with different stacking thicknesses, the acquisition of emission spectrum data, the extraction of comparison characteristic parameters, and the establishment of a calibration curve of microparticle stacking thickness are all described in Example 1 and will not be repeated in this embodiment.
[0093] In addition, in this embodiment, after the calibration curve of the micro-particle accumulation thickness is established, the accumulation thickness information of the micro-particle accumulation to be measured is obtained using the following scheme:
[0094] The focused pulsed laser, provided by the LIBS instrument operating parameters used during the calibration curve development process, is used to irradiate the microparticle accumulation to obtain emission spectrum data corresponding to the laser plasma. Corresponding comparison characteristic parameters are extracted from the emission spectrum data and compared with the calibration curve to quantify the accumulation thickness of the microparticle accumulation.
[0095] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the claims of the present invention.
Claims
1. A method for characterizing the thickness of microparticles, characterized in that: Including steps: S10. Irradiating a plurality of microparticle deposit samples of different stacking thicknesses by pulsed laser to obtain emission spectrum data of the laser plasma of each microparticle deposit sample; S20. Select the spectral characteristic parameter with a one-to-one correspondence between the emission spectrum data and the stacking thickness of the microparticle deposit sample, use the spectral characteristic parameter as the comparison characteristic parameter, use the stacking thickness data of the microparticle deposit sample as the abscissa and the comparison characteristic parameter data as the ordinate to establish a calibration curve; S30. By irradiating the microparticle deposit to be measured with a pulsed laser, obtaining the emission spectrum data of the laser plasma corresponding to the microparticle deposit to be measured, extracting the corresponding comparison characteristic parameters, comparing the comparison characteristic parameters with the calibration curve, and quantifying the accumulation thickness information of the microparticle deposit to be measured; The comparison characteristic parameter is the emission intensity of the spectral line, the width of the spectral line or the ratio of the intensities of two characteristic spectral lines.
2. The method for characterizing microparticle accumulation thickness according to claim 1, wherein: The microparticle accumulation is formed by accumulation of microparticles of the same type.
3. The method for characterizing microparticle accumulation thickness according to claim 1, wherein: Step S10 specifically includes: The focused pulse laser provided by the LIBS device under constant working parameters is used to irradiate multiple microparticle accumulation samples with different accumulation thicknesses to generate laser plasma.
4. The method for characterizing microparticle accumulation thickness according to claim 3, wherein: The acquisition of the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured in step S30 specifically includes: The focused pulse laser provided under the working parameters of the LIBS device used in the process of establishing the calibration curve is used to irradiate the microparticle accumulation to be measured, so as to obtain the emission spectrum data of the laser plasma corresponding to the microparticle accumulation to be measured.
5. The method for characterizing microparticle accumulation thickness according to claim 4, characterized in that: The operating parameters of the LIBS device include laser wavelength, laser pulse energy, spectrometer acquisition time, and the distance from the focal plane to the surface of the microparticle accumulation sample.
6. A microparticle stacking thickness characterization system based on the method according to any one of claims 1 to 5, characterized in that: include: LIBS equipment is used to provide focused pulsed laser light to irradiate the surface of multiple microparticle deposit samples with different stacking thicknesses, generating laser plasma through laser ablation; The calculation module obtains the emission spectrum data of the laser plasma of multiple micro-particle deposit samples with different stacking thicknesses, analyzes the obtained emission spectrum data, selects the spectral characteristic parameters that have a one-to-one correspondence between the emission spectrum data and the stacking thickness of the micro-particle deposit as the comparison characteristic parameters, and establishes a calibration curve of the micro-particle stacking thickness with the comparison characteristic parameters as the vertical coordinate and the micro-particle stacking thickness as the horizontal coordinate.