A mode-hopping prevention optical path system and method for silicon photonic chips

Abstract

This invention provides an anti-mode-hopping optical path system and method for silicon photonics chips, comprising: a 2MHz Dither generator module, which emits a temperature-insensitive 2MHz square wave scrambling signal data to an operational amplifier module; the operational amplifier module receives the temperature-insensitive 2MHz square wave scrambling signal data to generate a Dither signal, and flexibly adjusts the duty cycle of the Dither signal as needed; a resistor module, which controls the current intensity of the Dither signal to be 1% to 5% of the bias current amplitude; and a DFB laser module, which loads the received Dither signal with the controlled current intensity into a DFB laser to prevent mode hopping in the DFB laser. This avoids technical problems such as mode hopping, component interference, and high heat generation in DFB lasers, reduces the space occupied by the optical path system, and ensures the stable use of the DFB laser.

Description

Technical Field

[0001] This invention relates to the field of silicon photonics chip technology, and specifically to an anti-mode skipping optical path system and method for silicon photonics chips. Background Technology

[0002] The optical communication industry is currently experiencing rapid development, with optical modules playing a central role. As optical module speeds increase, highly integrated silicon photonics chips are gaining popularity. Using silicon photonics chips offers greater flexibility in the placement of other components.

[0003] Existing silicon photonics chips have the following technical problems:

[0004] 1) Silicon photonics chips generally require an external high-power distributed feedback (DFB) laser, which is prone to mode hopping problems.

[0005] 2) High-power distributed feedback (DFB) lasers generate a lot of heat and are too close to silicon photonics chips and other chips, which causes heat dissipation problems;

[0006] 3) Due to chip size limitations, the spacing of the coupling waveguides provided to the laser is usually small, such as 250μm. The spacing between adjacent optical paths in the optical path system of traditional free space coupling schemes is usually 1000μm, which leads to component interference problems.

[0007] 4) No feasible solution can be proposed for the problem of small spacing between the input waveguides of silicon photonic chips, which increases the space occupied by the optical path system. Summary of the Invention

[0008] To address the aforementioned technical problems, this invention provides an anti-mode-hopping optical path system and method for silicon photonic chips, which avoids technical issues such as mode hopping, component interference, and high heat generation in DFB lasers, reduces the space occupied by the optical path system, and ensures the stable use of DFB lasers.

[0009] To achieve the above objectives, the technical solution of the present invention is as follows:

[0010] A mode-hopping prevention optical path system for silicon photonics chips, comprising:

[0011] A 2MHz Temperature Dither Generator Module, which is used to generate a temperature-insensitive 2MHz square wave scrambled signal data to the operational amplifier module;

[0012] The operational amplifier module receives temperature-insensitive 2MHz square wave scrambled signal data to generate a Dither signal, and flexibly adjusts the duty cycle of the Dither signal as needed.

[0013] Resistor module: The resistor module is used to control the current intensity of the Dither signal to be 1% to 5% of the bias current amplitude;

[0014] The DFB laser module is used to load the Diffr signal after receiving the control current intensity into the DFB laser to prevent mode hopping of the DFB laser.

[0015] This invention provides an anti-mode hopping optical path system and method for silicon photonic chips, which avoids technical problems such as mode hopping, component interference, and high heat generation of DFB lasers, reduces the space occupied by the optical path system, and ensures the stable use of DFB lasers.

[0016] As a preferred technical solution, it includes: a semiconductor cooler, one side of which is the cold end of the semiconductor cooler, and the other side of which is the hot end of the semiconductor cooler, the DFB laser is disposed on the cold end of the semiconductor cooler, and the cold end of the semiconductor cooler is provided with a thermistor.

[0017] As a preferred technical solution, the semiconductor cooler includes:

[0018] A thermistor resistance testing module is used to test the resistance data of the thermistor and transmit the tested resistance data of the thermistor to the temperature module of the laser.

[0019] The laser's temperature module is used to calculate the laser's temperature data based on the received resistance data of the thermistor and transmit the laser's temperature data to the current control module of the semiconductor cooler.

[0020] The current control module of the semiconductor cooler is used to adjust the current of the semiconductor cooler according to the temperature data of the laser so as to control the temperature of the DFB laser.

[0021] As a preferred technical solution, the DFB laser is used to emit divergent laser light. A collimating lens, an isolator, and a polarizing beam splitter are sequentially arranged in the incident direction of the divergent laser light to achieve two optical paths, namely a transverse electric mode optical signal and a transverse magnetic mode optical signal.

[0022] As a preferred technical solution, a converging lens and a multi-splitter chip are sequentially arranged in the incident direction of the transverse electric mode optical signal to enable one transverse electric mode optical signal to be uniformly divided into multiple transverse electric mode optical signals. The multi-splitter chip is disposed on the side of the waveguide end of the silicon photonic chip. The multiple transverse electric mode optical signals enter the input waveguide of the silicon photonic chip through the output waveguide, so that one DFB laser can provide multiple input transverse electric mode optical signals. Moreover, the spacing of the optical waveguides split by the multi-splitter chip matches the spacing of the input waveguide of the silicon photonic chip.

[0023] As a preferred technical solution, a photodiode chip is provided in the incident direction of the transverse magnetic mode optical signal. The center of the photodiode chip is located on the optical axis of the transverse magnetic mode optical signal. The photodiode chip is used to convert the optical signal into an electrical signal. The photodiode chip is provided with an optical signal intensity monitoring module, which is used to monitor the intensity of the transverse magnetic mode optical signal.

[0024] As a preferred technical solution, it includes: a transverse electric mode optical signal intensity estimation module, which is used to estimate the transverse electric mode optical signal intensity data based on the received transverse magnetic mode optical signal intensity data and transmit the transverse electric mode optical signal intensity data to the working current control module of the DFB laser;

[0025] The DFB laser's operating current control module adjusts the DFB laser's operating current according to the intensity of the received transverse electric mode optical signal, thereby enabling the adjustment of the intensity of the optical signal emitted by the DFB laser.

[0026] This invention provides a method for preventing mode skipping in optical paths for silicon photonic chips, comprising the following steps:

[0027] S1 outputs a temperature-insensitive 2MHz square wave scrambled signal data;

[0028] S2 generates a Dither signal from temperature-insensitive 2MHz square wave scrambling signal data, and flexibly adjusts the duty cycle of the Dither signal as needed;

[0029] The current intensity of the S3 control Differ signal is 1% to 5% of the bias current amplitude;

[0030] The Di ther signal, after controlling the current intensity of S4, is applied to the DFB laser to prevent mode hopping in the DFB laser.

[0031] As a preferred technical solution, the following steps are also included:

[0032] S5 is loaded with divergent laser emitted by a DFB laser with a Dither signal. The divergent laser is first collimated by a collimating lens, then by an isolator, and finally by a polarizing beam splitter to split into two optical paths: a transverse electric mode optical signal and a transverse magnetic mode optical signal.

[0033] After being separated by a polarization beam splitter, the transverse electric mode light signal is converged by a converging lens and enters the input waveguide of the multi-beam splitter chip. Inside the multi-beam splitter chip, the one transverse electric mode light signal is evenly divided into multiple transverse electric mode light signals. The multiple transverse electric mode light signals enter the input waveguide of the silicon photonics chip through the output waveguide, thus enabling a DFB laser loaded with a Dither signal to provide multiple input transverse electric mode light signals.

[0034] The transverse magnetic mode optical signal, after being separated and reflected by a polarizing beam splitter, is incident perpendicularly into the photodiode chip. The transverse magnetic mode optical signal entering the photodiode chip is converted into an electrical signal. The intensity of the transverse magnetic mode optical signal is monitored, and the intensity of the transverse electrical mode optical signal is calculated by multiplying the intensity of the transverse magnetic mode optical signal by a calculation coefficient. The operating current of the DFB laser is adjusted according to the intensity of the transverse electrical mode optical signal to regulate the intensity of the optical signal of the DFB laser.

[0035] As a preferred technical solution, step S4 further includes the following steps:

[0036] A DFB laser loaded with a Dither signal is placed on the cold end of a thermoelectric cooler. A thermistor is installed at the cold end of the thermoelectric cooler. The temperature of the DFB laser is calculated by measuring the resistance of the thermistor. The current of the thermoelectric cooler is adjusted according to the temperature of the DFB laser to control the temperature of the DFB laser.

[0037] This invention provides an anti-mode hopping optical path system and method for silicon photonics chips. Addressing the mode hopping problem in high-power DFB lasers, this invention loads a Dither signal (perturbation signal) into the laser to prevent mode hopping. To address the issue of small input waveguide spacing in silicon photonics chips, a multi-splitter chip is used for transition, significantly reducing the space occupied by the optical path system. To address heat dissipation, the distance between the DFB laser and other chips is increased to physically isolate the heat source, and a TEC (thermal energy cooler) is placed below the DFB laser to control heat. Furthermore, a PBS (polarization beam splitter) is used to separate the useless TM mode (transverse magnetic mode) optical signal in the optical path for monitoring and feedback, thereby adjusting the intensity of the DFB laser's optical signal and ensuring stable operation of the DFB laser. Attached Figure Description

[0038] Figure 1 This is a schematic diagram of the Di ther signal loading circuit structure provided by the present invention;

[0039] Figure 2 A top view of the anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0040] Figure 3 A side view of the anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0041] Figure 4 A top view of the transverse electrical mode optical signal path in the anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0042] Figure 5 Schematic diagram of the silicon photonics chip and multi-splitter chip provided by the present invention;

[0043] Figure 6 A top view of the transverse magnetic mode optical signal path in the anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0044] Figure 7 A schematic diagram of the spectrum of a normal DFB laser is provided.

[0045] Figure 8 Here is a schematic diagram of the spectrum of the DFB laser when mode hopping occurs;

[0046] Figure 9 A schematic diagram of the DFB laser spectrum after loading Dither during mode hopping, provided by the present invention;

[0047] Figure 10 A schematic diagram of the semiconductor cooler in the anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0048] Figure 11 A schematic diagram of the polarization beam splitter in the anti-mode-hopping optical path system for silicon photonic chips provided by the present invention;

[0049] Figure 12 A circuit diagram of a semiconductor cooler in an anti-mode-hopping optical path system for silicon photonics chips provided by the present invention;

[0050] Figure 13 A circuit structure diagram of an anti-mode skipping optical path system for silicon photonics chips provided by the present invention;

[0051] The components are as follows: 1-2MHz Dither generator module; 2-resistor module; 3-operational amplifier module; 4-DFB laser; 5-collimating lens; 6-isolator; 7-polarizing beam splitter prism; 8-converging lens; 9-multi-beam splitter chip; 10-silicon photonic chip; 11-photodiode chip; 12-semiconductor cooler; 13-cold end of semiconductor cooler; 14-hot end of semiconductor cooler; 15-DC power supply for semiconductor cooler; 16-ceramic electrode; 17-N-type and P-type semiconductors; 18-transverse electric mode optical signal; 19-transverse magnetic mode optical signal. Detailed Implementation

[0052] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0053] It is understood that the present invention achieves its objectives through certain embodiments, such as... Figure 1 As shown, the anti-mode-hopping optical path system for silicon photonics chips includes:

[0054] 2MHz Dither generator module 1, which is used to generate a temperature-insensitive 2MHz square wave scrambling signal data to the operational amplifier module 3;

[0055] The operational amplifier module 3 receives temperature-insensitive 2MHz square wave scrambled signal data to generate a Dither signal, and flexibly adjusts the duty cycle of the Dither signal as needed.

[0056] Resistor module 2: The resistor module 2 is used to control the current intensity of the Di ther signal to be 1% to 5% of the bias current amplitude;

[0057] The DFB laser module is used to load the Dither signal, after receiving the control current intensity, into the DFB laser 4 to prevent mode hopping of the DFB laser 4. The Dither signal is generated by the operational amplifier module 3 through a temperature-insensitive 2MHz square wave scrambled signal. The duty cycle of the Dither signal can be flexibly adjusted as needed, and its current intensity is about 1% to 5% of the Ibias (bias current) amplitude. Loading the Dither signal, after receiving the control current intensity, into the DFB laser 4 can effectively prevent the laser from hopping.

[0058] like Figure 2-4As shown, one side of the thermoelectric cooler 12 is the cold end 13, and the other side is the hot end 14. The DFB laser 4 is disposed on the cold end 13 of the thermoelectric cooler, which is equipped with a thermistor (not shown). The thermoelectric cooler 12 includes a thermistor resistance testing module, which is used to test the resistance data of the thermistor and transmit the tested resistance data to the temperature module of the laser. The temperature module of the laser is used to... The temperature data of the laser is calculated based on the received resistance data of the thermistor and transmitted to the current control module of the semiconductor cooler. The current control module of the semiconductor cooler is used to adjust the current of the semiconductor cooler according to the laser temperature data to control the temperature of the DFB laser. The DFB laser emits diverging laser light, and a collimating lens, an isolator, and a polarizing beam splitter are sequentially arranged in the incident direction of the diverging laser light to achieve two optical paths: a transverse electric mode optical signal 18 and a transverse magnetic mode optical signal 19. Figure 5 As shown, a converging lens 8 and a multi-splitter chip 9 are sequentially arranged along the incident direction of the transverse electric mode optical signal 18 to uniformly split one transverse electric mode optical signal 18 into multiple transverse electric mode optical signals 18. The multi-splitter chip 9 is disposed on the side of the waveguide end of the silicon photonic chip 10. The multiple transverse electric mode optical signals 18 enter the input waveguide of the silicon photonic chip 10 through the output waveguide, thus enabling one DFB laser 4 to provide multiple input transverse electric mode optical signals 18. The spacing of the optical waveguides split by the multi-splitter chip 9 matches the spacing of the input waveguide of the silicon photonic chip 10. Figure 6 As shown, a photodiode chip 11 is provided in the incident direction of the transverse magnetic mode optical signal 19. The center of the photodiode chip 11 is located on the optical axis of the transverse magnetic mode optical signal 19. The photodiode chip 11 is used to convert the optical signal into an electrical signal. The photodiode chip 11 is provided with an optical signal intensity monitoring module, which is used to monitor the intensity of the transverse magnetic mode optical signal. The transverse electrical mode optical signal intensity calculation module is used to calculate the transverse electrical mode optical signal intensity data based on the received transverse magnetic mode optical signal intensity data and transmit the transverse electrical mode optical signal intensity data to the working current control module of the DFB laser. The working current control module of the DFB laser adjusts the working current of the DFB laser according to the received transverse electrical mode optical signal intensity to adjust the light intensity of the optical signal emitted by the DFB laser 4.

[0059] The semiconductor cooler 12 and silicon photonic chip 10 are pre-fixed; the high-power DFB laser 4 is fixed on the semiconductor cooler 12; the 1×4 beam splitter chip 9 is fixed on the side of the waveguide end of the silicon photonic chip 10, and the four output waveguides of the 1×4 beam splitter chip are precisely aligned with the four input waveguides of the silicon photonic chip; the collimating lens 5, isolator 6, polarizing beam splitter prism 7 (PBS), and converging lens 8 are fixed respectively, and the center of each component is located on the optical axis of the transverse electric mode optical signal 18; the photodiode chip 11 is vertically fixed, and its center is located on the optical axis of the transverse magnetic mode optical signal 19; a Di... The diverging laser emitted by the high-power DFB laser 4 first passes through a collimating lens 5 to become collimated light, then through an isolator 6, and finally through a polarizing beam splitter prism 7 to split the beam into two paths. One of these two paths passes through the polarizing beam splitter prism 7 to separate the transverse electric mode (TEM) light signal 18. The separated TEM light signal 18 passes through a converging lens 8 and converges into the input waveguide of a 1×4 beam splitter chip 9. Inside the 1×4 beam splitter chip 9, the one light path is evenly split into four paths, which then pass through the output waveguide into the input waveguide of a silicon photonics chip 10. This achieves four input light paths provided by one DFB laser 4, with the separated TEM light signal 18 accounting for approximately 95% of the total light intensity. Another optical path in the optical path is reflected and separated by the polarization beam splitter 7 to form the transverse magnetic mode optical signal 19. The transverse magnetic mode optical signal 19 is refracted vertically and enters the photodiode chip 11. The photodiode chip 11 converts the optical signal into an electrical signal. The transverse magnetic mode optical signal entering the photodiode chip 11 is converted into an electrical signal. The intensity of the transverse magnetic mode optical signal is monitored, and the intensity of the transverse electric mode optical signal 18 is calculated by multiplying the intensity of the transverse magnetic mode optical signal by a calculation coefficient. The operating current of the DFB laser 4 is adjusted according to the intensity of the transverse electric mode optical signal 18, and the output power of the DFB laser 4 is adjusted to regulate the intensity of the optical signal emitted by the DFB laser 4. This realizes the monitoring, feedback and adjustment of the laser signal emitted by the DFB laser 4.

[0060] like Figure 3 As shown, the present invention places the high-power DFB laser 4 on the semiconductor cooler 12 (TEC) and keeps it away from other chips such as the silicon photonics chip 10, thus physically isolating the heat source and effectively dissipating heat through the semiconductor cooler 12 (TEC), thereby achieving efficient thermal management.

[0061] like Figure 7 As shown, a normal DFB laser spectrum has a single peak and an SMSR (Side Mode Suppression Ratio) > 36. Due to mode competition within DFB laser 4, changes in conditions such as current and temperature can alter the cavity length, leading to a jump in the center wavelength. Figure 8As shown, the center wavelength jumps from the left peak to the right peak, resulting in a double peak. The SMSR (Supervisor Signal) is typically only 10-20, leading to reduced optical power and severely impacting communication quality (affecting eye diagram quality). For example... Figure 9 As shown, this application loads the Dither signal into the DFB laser 4. When mode hopping occurs, the signal defects are compensated through calculation, the optical power is stabilized, and the SMSR (Side Mode Rejection Ratio) is improved.

[0062] like Figure 10 As shown, TEC stands for Thermo Electron Cooler, a semiconductor cooler made using the Peltier effect of semiconductor materials. The Peltier effect refers to the phenomenon where, when a direct current passes through a thermocouple composed of two semiconductor materials, one end absorbs heat and the other releases heat. Heavily doped N-type and P-type bismuth telluride are mainly used as the semiconductor materials in the TEC. The bismuth telluride elements are connected in series and generate heat in parallel. The semiconductor cooler 12 includes N-type and P-type semiconductors 17, which are connected together by electrodes and sandwiched between two ceramic electrodes 16. When current flows through the semiconductor cooler 12, the heat generated by the current is transferred from one side of the semiconductor cooler 12 to the other. The cooler 12 has a "hot end" and a "cold end". Note that the hot end and cold end are not absolute. By adjusting the positive and negative of the DC power supply, the hot end and cold end can be interchanged. This is the heating and cooling principle of the thermoelectric cooler 12. One side of the thermoelectric cooler 12 is the cold end 13, and the other side is the hot end 14. The DFB laser 4 is fixed on the cold end 13 of the thermoelectric cooler, and the hot end 14 of the thermoelectric cooler is fixed on the substrate (bottom of the outer shell). The thermoelectric cooler 12 transfers the heat generated by the DFB laser 4 from the cold end to the hot end. The hot end is used for heat dissipation, and the hot end dissipates the heat through the outer shell.

[0063] A thermistor is placed at the cold end 13 of the thermoelectric cooler, adjacent to the DFB laser 4. Since the thermistor is close to the DFB laser 4, its temperature can be assumed to be the same as the laser's temperature. The thermistor's resistance is different at different temperatures. By measuring the thermistor's resistance, the temperature of the DFB laser 4 can be calculated. Then, the current of the thermoelectric cooler (TEC) 12 is adjusted to regulate the laser's temperature.

[0064] The present invention places the high-power DFB laser 4 on the semiconductor cooler 12 (TEC) and keeps it away from other chips such as the silicon photonics chip 10, thus physically isolating the heat source and effectively dissipating heat through the semiconductor cooler 12 (TEC), thereby achieving effective thermal management.

[0065] like Figure 11As shown, the laser emitted by the DFB laser 4 is linearly polarized light, mainly consisting of transverse electric (TE) mode optical signal 18, mixed with a small amount of transverse magnetic (TM) mode optical signal 19. For the silicon photonic chip 10 that receives the optical signal, only the transverse electric (TE) mode optical signal 18 can be received, while the transverse magnetic (TM) mode optical signal 19 is useless. The polarization beam splitter (PBS) 7 is an optical element that splits an incident beam into two beams with mutually perpendicular propagation directions. Both beams are linearly polarized and their polarization directions are perpendicular to each other. In this case, the transverse electric (TE) mode optical signal 18 is transmitted, and the transverse magnetic (TM) mode optical signal 19 is reflected perpendicularly.

[0066] This invention provides a method for preventing mode skipping in optical paths for silicon photonic chips, comprising the following steps:

[0067] S1 outputs a temperature-insensitive 2MHz square wave scrambled signal data;

[0068] S2 generates a Dither signal from temperature-insensitive 2MHz square wave scrambling signal data, and flexibly adjusts the duty cycle of the Dither signal as needed;

[0069] The current intensity of the S3 control Differ signal is 1% to 5% of the bias current amplitude;

[0070] The Dither signal, after controlling the current intensity of S4, is applied to the DFB laser 4 to prevent mode hopping of the DFB laser 4. The DFB laser 4 with the Dither signal is placed on the cold end 13 of the semiconductor cooler. A thermistor (not shown) is provided on the cold end 13 of the semiconductor cooler. The temperature of the DFB laser 4 is estimated by measuring the resistance value of the thermistor (not shown). The current of the semiconductor cooler 12 is adjusted according to the temperature of the DFB laser 4 to control the temperature of the DFB laser 4.

[0071] S5 is loaded with divergent laser emitted by DFB laser 4 with a Dither signal. The divergent laser first passes through collimating lens 5 to become collimated light, then passes through isolator 6, and finally passes through polarizing beam splitter 7 to split into two optical paths, namely transverse electric mode optical signal 18 and transverse magnetic mode optical signal 19.

[0072] After being separated by the polarization beam splitter prism 7, the transverse electric mode optical signal 18 is converged by the converging lens 8 and enters the input waveguide of the multi-beam splitter chip 9. Inside the multi-beam splitter chip 9, the one transverse electric mode optical signal 18 is evenly divided into multiple transverse electric mode optical signals 18. The multiple transverse electric mode optical signals 18 enter the input waveguide of the silicon photonics chip 10 through the output waveguide, so that a DFB laser 4 loaded with a Dither signal can provide multiple input transverse electric mode optical signals 18.

[0073] The transverse magnetic mode optical signal 19, after being separated and reflected by the polarization beam splitter 7, is vertically refracted and incident into the photodiode chip 11. The transverse magnetic mode optical signal 19 entering the photodiode chip 11 is converted into an electrical signal. The intensity of the transverse magnetic mode optical signal 19 is monitored. The intensity of the transverse electric mode optical signal 18 is calculated by multiplying the intensity of the transverse magnetic mode optical signal 19 by a calculation coefficient. The operating current of the DFB laser 4 is adjusted according to the intensity of the transverse electric mode optical signal 18 to adjust the light intensity of the optical signal of the DFB laser 4.

[0074] The present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method for anti-mode-hopping optical path for silicon photonic chips as described in any of the preceding claims.

[0075] This invention provides an anti-mode-hopping optical path system and method for silicon photonics chips. Addressing the mode-hopping problem in high-power DFB lasers, this invention loads a Dither signal (perturbation signal) into the DFB laser to prevent mode hopping. To address the issue of small input waveguide spacing in silicon photonics chips, a multi-splitter chip is used for transition, significantly reducing the space occupied by the optical path system. For heat dissipation, the distance between the DFB laser and other chips is increased to physically isolate the heat source, and a TEC (thermal energy cooler) is placed below the DFB laser to control heat. Furthermore, a PBS (polarization beam splitter) is used to separate the useless TM mode (transverse magnetic mode) optical signal in the optical path for monitoring and feedback, thereby adjusting the intensity of the DFB laser's optical signal and ensuring stable operation of the DFB laser.

[0076] It is understood that this invention has been described through some embodiments, and those skilled in the art will recognize that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of this invention. Furthermore, under the teachings of this invention, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of this invention. Therefore, this invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are protected by this invention. Furthermore, under the teachings of this invention, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of this invention. Therefore, this invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the scope of protection of this invention.

Claims

1. A mode-hopping prevention optical path system for silicon photonic chips, characterized in that, include: A 2MHz Dither generator module is used to generate a temperature-insensitive 2MHz square wave scrambled signal data to the operational amplifier module. The operational amplifier module receives temperature-insensitive 2MHz square wave scrambled signal data to generate a Dither signal, and flexibly adjusts the duty cycle of the Dither signal as needed. Resistor module: The resistor module is used to control the current intensity of the Dither signal to be 1% to 5% of the bias current amplitude; The DFB laser module is used to load the Dither signal after receiving the control current intensity into the DFB laser to prevent mode hopping of the DFB laser.

2. The anti-mode skipping optical path system for silicon photonic chips according to claim 1, characterized in that, include: A semiconductor cooler, wherein one side of the semiconductor cooler is the cold end and the other side is the hot end, the DFB laser is disposed on the cold end of the semiconductor cooler, and the cold end of the semiconductor cooler is provided with a thermistor.

3. The anti-mode skipping optical path system for silicon photonic chips according to claim 2, characterized in that, The semiconductor cooler includes: A thermistor resistance testing module is used to test the resistance data of the thermistor and transmit the tested resistance data of the thermistor to the temperature module of the laser. The laser's temperature module is used to calculate the laser's temperature data based on the received resistance data of the thermistor and transmit the laser's temperature data to the current control module of the semiconductor cooler. The current control module of the semiconductor cooler is used to adjust the current of the semiconductor cooler according to the temperature data of the laser so as to control the temperature of the DFB laser.

4. The anti-mode-hopping optical path system for silicon photonic chips according to claim 1, characterized in that, The DFB laser is used to emit divergent laser light. A collimating lens, an isolator, and a polarizing beam splitter are sequentially arranged in the incident direction of the divergent laser light to achieve two optical paths, namely a transverse electric mode optical signal and a transverse magnetic mode optical signal.

5. The anti-mode-hopping optical path system for silicon photonic chips according to claim 4, characterized in that, A converging lens and a multi-splitter chip are sequentially arranged in the incident direction of the transverse electric mode optical signal to enable the uniform division of one transverse electric mode optical signal into multiple transverse electric mode optical signals. The multi-splitter chip is disposed on the side of the waveguide end of the silicon photonic chip. The multiple transverse electric mode optical signals enter the input waveguide of the silicon photonic chip through the output waveguide, so that one DFB laser can provide multiple input transverse electric mode optical signals. Moreover, the spacing of the optical waveguides split by the multi-splitter chip matches the spacing of the input waveguide of the silicon photonic chip.

6. The anti-mode-hopping optical path system for silicon photonic chips according to claim 4, characterized in that, A photodiode chip is provided in the incident direction of the transverse magnetic mode optical signal. The center of the photodiode chip is located on the optical axis of the transverse magnetic mode optical signal. The photodiode chip is used to convert the optical signal into an electrical signal. A light signal intensity monitoring module is provided on the photodiode chip to monitor the intensity of the transverse magnetic mode optical signal.

7. The anti-mode-hopping optical path system for silicon photonic chips according to claim 6, characterized in that, include: A transverse electric mode optical signal intensity calculation module is used to calculate the transverse electric mode optical signal intensity data based on the received transverse magnetic mode optical signal intensity data and transmit the transverse electric mode optical signal intensity data to the working current control module of the DFB laser. The DFB laser's operating current control module adjusts the DFB laser's operating current according to the intensity of the received transverse electric mode optical signal, thereby enabling the adjustment of the intensity of the optical signal emitted by the DFB laser.

8. A method for an anti-mode-hopping optical path for silicon photonic chips, characterized in that, The anti-mode-hopping optical path system for silicon photonics chips as described in claim 1 includes the following steps: S1 outputs a temperature-insensitive 2MHz square wave scrambled signal data; S2 generates a Dither signal from temperature-insensitive 2MHz square wave scrambling signal data, and flexibly adjusts the duty cycle of the Dither signal as needed; The current intensity of the S3 control Dither signal is 1% to 5% of the bias current amplitude; S4 loads the Dither signal received after controlling the current intensity into the DFB laser to prevent mode hopping in the DFB laser.

9. The method for anti-mode skipping optical path for silicon photonic chips according to claim 8, characterized in that, It also includes the following steps: The DFB laser with the S5 loaded with the Dither signal emits divergent laser light. The divergent laser light is first collimated by a collimating lens, then passes through an isolator, and finally passes through a polarizing beam splitter to split into two optical paths, namely the transverse electric mode optical signal and the transverse magnetic mode optical signal. After being separated by a polarization beam splitter, the transverse electric mode light signal is focused by a converging lens and enters the input waveguide of the multi-beam splitter chip. Inside the multi-beam splitter chip, the one transverse electric mode light signal is evenly divided into multiple transverse electric mode light signals. The multiple transverse electric mode light signals enter the input waveguide of the silicon photonics chip through the output waveguide, thus enabling a single DFB laser loaded with a Dither signal to provide multiple input transverse electric mode light signals. The transverse magnetic mode optical signal, after being separated and reflected by a polarizing beam splitter, is incident perpendicularly into the photodiode chip. The transverse magnetic mode optical signal entering the photodiode chip is converted into an electrical signal. The intensity of the transverse magnetic mode optical signal is monitored, and the intensity of the transverse electrical mode optical signal is calculated by multiplying the intensity of the transverse magnetic mode optical signal by a calculation coefficient. The operating current of the DFB laser is adjusted according to the intensity of the transverse electrical mode optical signal to regulate the intensity of the optical signal of the DFB laser.

10. The method for anti-mode skipping optical path for silicon photonic chips according to claim 9, characterized in that, Step S4 also includes the following steps: A DFB laser loaded with a Dither signal is placed on the cold end of a thermoelectric cooler. A thermistor is installed at the cold end of the thermoelectric cooler. The temperature of the DFB laser is calculated by measuring the resistance of the thermistor. The current of the thermoelectric cooler is adjusted according to the temperature of the DFB laser to control the temperature of the DFB laser.

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