Cleaning device and cleaning method thereof

Abstract

The present disclosure provides a cleaning device and a cleaning method thereof. The cleaning device includes: a cleaning chamber, a gas generator, a fixing assembly, a cooling assembly, and a recovery assembly. The cleaning chamber is provided with a cooling area, a cleaning area, and a heating area spaced apart from each other. The gas generator is used to heat the heating area and generate cleaning gas. The fixing assembly is used to fix a semiconductor structure in the cleaning area, with a pattern area on the second side of the semiconductor structure, and the second side facing the heating area. The cooling assembly is connected to the cooling area and is used to perform a cooling process on the first side of the semiconductor structure, condensing the cleaning gas entering the pattern area into a cleaning liquid. The recovery assembly is connected to the cleaning chamber and is used to recover the re-vaporized cleaning liquid. The cleaning device of the present disclosure cleans the pattern area of ​​the semiconductor structure by changing the state of the cleaning gas, effectively reducing the impact of surface capillary tension on the pattern area during the cleaning process, thereby improving the cleaning quality.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a cleaning device and a cleaning method thereof. Background Art

[0002] During the entire semiconductor structure manufacturing process, cleaning is often required to ensure the cleanliness of the semiconductor structure surface. With the rapid development of semiconductor technology, the manufacturing process of semiconductor structures has become increasingly complex, and semiconductor structures with high aspect ratios have become increasingly important.

[0003] In the related art, during the cleaning process of a semiconductor structure with a high aspect ratio, the semiconductor structure is very likely to cause problems such as lateral bending or dimensional changes, which reduces the performance and yield of the semiconductor structure. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0005] The present disclosure provides a cleaning device and a cleaning method thereof.

[0006] According to a first aspect of the present disclosure, a cleaning device is provided, comprising:

[0007] a cleaning chamber, wherein the cleaning chamber is configured to include a cooling area, a cleaning area, and a heating area that are sequentially spaced apart, and the cooling area is located above the heating area;

[0008] a gas generator, for heating the heating area and generating cleaning gas;

[0009] A fixing assembly, for fixing a semiconductor structure in the cleaning region, wherein the semiconductor structure has a first surface and a second surface disposed opposite to each other, the second surface having a patterned area with a preset aspect ratio, wherein the second surface faces the direction of the heating region;

[0010] a cooling assembly in communication with the cooling region, configured to perform a cooling process on the first surface so as to condense the cleaning gas entering the pattern region into a cleaning liquid;

[0011] A recovery component is communicated with the cleaning chamber and is used to recover the re-vaporized cleaning liquid.

[0012] According to some embodiments of the present disclosure, the gas generator includes a housing having a receiving cavity and a heating assembly, wherein the receiving cavity is used to hold a cleaning agent;

[0013] The heating component is used to heat the heating area and heat the cleaning agent to generate the cleaning gas.

[0014] According to some embodiments of the present disclosure, the housing includes a shell body having an opening and a cover body covering the opening;

[0015] The shell body is provided with a cleaning gas pipeline and a liquid supply pipeline respectively connected to the accommodating cavity, and the cleaning gas pipeline and the liquid supply pipeline are located on different sides of the shell body, wherein the cleaning gas pipeline is used to dry the cleaning chamber after cleaning, and the liquid supply pipeline is used to transport the cleaning agent;

[0016] The cover body is provided with a gas outlet, and the cleaning gas is output outward from the gas outlet.

[0017] According to some embodiments of the present disclosure, a projection shape of the cover body in a longitudinal section includes one of a conical shape, a semi-elliptical shape, and a concave shape.

[0018] According to some embodiments of the present disclosure, there are multiple gas outlets, which are evenly distributed on the cover.

[0019] According to some embodiments of the present disclosure, the heating assembly includes a first chuck and a first heater, wherein the first chuck is disposed within the housing;

[0020] The first heater is disposed on the housing and connected to the first chuck for heating the first chuck.

[0021] According to some embodiments of the present disclosure, a first driving member is provided on the cleaning chamber, an output shaft end of the first driving member is connected to the gas generator, and the first driving member is used to adjust the relative distance between the gas generator and the fixed component.

[0022] According to some embodiments of the present disclosure, the fixing assembly includes a fixing frame and a fixing rod;

[0023] The fixing rod is arranged on a side of the fixing frame facing the gas generator, and there are multiple fixing rods. The bottom end of each fixing rod is provided with a fixing portion for supporting the semiconductor structure, and an accommodating space is enclosed between the multiple fixing portions and the fixing frame;

[0024] Wherein, the first surface is arranged toward the fixing frame.

[0025] According to some embodiments of the present disclosure, the cooling assembly includes a second chuck and a cooling pipeline arranged on the second chuck, the second chuck is connected to the cleaning chamber through a second driving member, and the second driving member is used to drive the second chuck to abut against the first surface.

[0026] According to some embodiments of the present disclosure, the cooling circuit includes a cooling loop and a cooling branch;

[0027] The number of the cooling loops is multiple and concentrically arranged, and a cooling inlet and a cooling outlet are provided on the cooling loops, wherein the cooling inlet and the cooling outlet are located on different cooling loops;

[0028] The cooling branches are used to connect adjacent cooling loops, and the numbers of the cooling branches between adjacent cooling loops are different.

[0029] According to some embodiments of the present disclosure, the recovery component includes a vacuum pump and a recovery pipeline, the vacuum pump is connected to the recovery pipeline, the recovery pipeline is connected to the cleaning chamber, and a first shut-off valve is provided on the recovery pipeline.

[0030] According to some embodiments of the present disclosure, the recovery assembly further includes a purification pipeline, which is respectively connected to the gas generator and the recovery pipeline, and a second shut-off valve is provided on the purification pipeline.

[0031] According to some embodiments of the present disclosure, the cleaning device further includes a second heater, which is communicated with the cleaning chamber and is used to dry the cleaning chamber.

[0032] According to some embodiments of the present disclosure, the preset aspect ratio is greater than or equal to 5.

[0033] A second aspect of the present disclosure provides a cleaning method for a cleaning device, which is applied to the cleaning device according to the first aspect. The cleaning method includes:

[0034] Placing the semiconductor structure in a fixing assembly within the cleaning chamber so that the second surface of the pattern region having a preset aspect ratio on the semiconductor structure faces the gas generator;

[0035] Using the gas generator to perform a first temperature increase on the heating area, so that the liquid cleaning agent in the gas generator is converted into a gaseous cleaning gas to clean the second surface;

[0036] performing a cooling process on the cleaned first surface of the semiconductor structure using a cooling assembly to condense the cleaning gas into a cleaning liquid;

[0037] performing a second temperature raising process on the heating area by the gas generator and adjusting the pressure in the cleaning chamber so as to vaporize the cleaning liquid again;

[0038] The vaporized cleaning liquid is discharged using a recovery component.

[0039] According to some embodiments of the present disclosure, the cleaning method further comprises:

[0040] The cleaned semiconductor structure is moved out of the cleaning chamber, and the cleaning chamber is cleaned.

[0041] In the cleaning device and cleaning method of the embodiments of the present disclosure, a gas generator is used to heat and generate cleaning gas, and the cleaning gas is used to clean the second surface of the semiconductor structure having a graphic area. During the cleaning process, the first surface of the semiconductor structure is cooled by a cooling component to condense the cleaning gas into a cleaning liquid, and then the re-vaporized cleaning liquid is recovered by a recovery component. The graphic area of ​​the semiconductor structure is efficiently cleaned by the change in the state of the cleaning gas, effectively reducing the influence of surface capillary tension on the graphic area of ​​the semiconductor structure during the cleaning process, and improving the cleaning quality.

[0042] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The accompanying drawings, which are incorporated into and constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the embodiments of the present disclosure. In these drawings, similar reference numerals are used to represent similar elements. The drawings described below are some embodiments of the present disclosure, not all embodiments. For those skilled in the art, other drawings can be derived from these drawings without inventive effort.

[0044] Figure 1 is a schematic diagram of a cleaning device according to an exemplary embodiment.

[0045] Figure 2 FIG. 1 is a schematic diagram showing a semiconductor structure placed in a cleaning device according to an exemplary embodiment.

[0046] Figure 3 The figure is a schematic diagram showing a second chuck abutting against a semiconductor structure in a cleaning device according to an exemplary embodiment.

[0047] Figure 4 The figure is a schematic diagram showing cleaning of the second surface of a semiconductor structure in a cleaning device according to an exemplary embodiment.

[0048] Figure 5 The figure is a schematic diagram showing cleaning of particulate impurities in a cleaning device according to an exemplary embodiment.

[0049] Figure 6 FIG. 1 is a schematic diagram showing a process of discharging particulate impurities in a cleaning device according to an exemplary embodiment.

[0050] Figure 7 FIG. 1 is a schematic diagram showing a drying process for a semiconductor structure in a cleaning device according to an exemplary embodiment.

[0051] Figure 8 FIG. 1 is a schematic diagram showing a semiconductor structure after being removed from a cleaning device according to an exemplary embodiment.

[0052] Figure 9 Schematic diagram of three structures of a cover body in a cleaning device according to an exemplary embodiment.

[0053] Figure 10 is a schematic diagram of a cooling component in a cleaning device according to an exemplary embodiment.

[0054] Figure 11 It is a schematic diagram showing a first distance, a displacement distance and an initial distance in a cleaning device according to an exemplary embodiment.

[0055] Figure 12 The figure is a flow chart of a cleaning method for a cleaning device according to an exemplary embodiment.

[0056] Reference numerals:

[0057] 1. Cleaning chamber; 2. Gas generator;

[0058] 3. Fixing assembly; 4. Cooling assembly;

[0059] 5. Recycling components; 6. Semiconductor structures;

[0060] 7. Clean gas pipeline; 8. Liquid supply pipeline;

[0061] 9. First driving member; 10. Second driving member;

[0062] 11. Cooling area; 12. Cleaning area;

[0063] 13. Heating area; 21. Shell;

[0064] 22. Heating assembly; 31. Fixing frame;

[0065] 32. Fixing rod; 33. Accommodation space

[0066] 41. Second chuck; 42. Cooling pipeline;

[0067] 51. Vacuum pump; 52. Recovery pipeline;

[0068] 53. First stop valve; 54. Purification pipeline;

[0069] 55. Second stop valve; 61. First side;

[0070] 62. Second side; 63. Graphic area;

[0071] 81. First liquid storage tank; 110. Second heater;

[0072] 211, shell body; 212, cover body;

[0073] 221. First chuck; 222. First heater;

[0074] 321, fixed part; 421, cooling loop;

[0075] 422, cooling branch; 423, cooling inlet;

[0076] 424, cooling outlet; 425, second liquid storage tank;

[0077] 2121, gas outlet; L1, first distance;

[0078] L2, displacement distance; L3, initial distance;

[0079] P. Particulate impurities. DETAILED DESCRIPTION

[0080] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present disclosure. It should be noted that, in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other.

[0081] During the entire semiconductor structure manufacturing process, cleaning is often required to ensure the cleanliness of the semiconductor structure surface. With the rapid development of semiconductor technology, the manufacturing process of semiconductor structures has become increasingly complex, and semiconductor structures with high aspect ratios have become increasingly important.

[0082] However, during the cleaning process of semiconductor structures with high aspect ratios, the capillary tension of chemicals doped in the cleaning solution will release a large force during the drying process of the semiconductor structure, making the high aspect ratio structures in the semiconductor structure extremely prone to lateral bending or dimensional changes, thereby reducing the performance and yield of the semiconductor structure.

[0083] In the cleaning device and cleaning method of the embodiments of the present disclosure, a gas generator is used to heat and generate cleaning gas, and the cleaning gas is used to clean the second surface of the semiconductor structure having a graphic area. During the cleaning process, the first surface of the semiconductor structure is cooled by a cooling component to condense the cleaning gas into a cleaning liquid, and then the re-vaporized cleaning liquid is recovered by a recovery component. The graphic area of ​​the semiconductor structure is efficiently cleaned by the change in the state of the cleaning gas, effectively reducing the influence of surface capillary tension on the graphic area of ​​the semiconductor structure during the cleaning process, and improving the cleaning quality.

[0084] In an exemplary embodiment of the present disclosure, a cleaning device is provided, such as Figure 1 As shown, Figure 1 A schematic diagram of a cleaning device according to an exemplary embodiment of the present disclosure is shown below. Figure 2-Figure 11 The cleaning device is introduced.

[0085] like Figure 1 As shown, an exemplary embodiment of the present disclosure provides a cleaning device, comprising a cleaning chamber 1. The cleaning chamber 1 is internally structured into a cooling area 11, a cleaning area 12 and a heating area 13 which are sequentially spaced apart, and the cooling area 11 is located above the heating area 13.

[0086] Cooling zone 11 is located at the top of cleaning chamber 1 and may contain cooling assembly 4. Cleaning zone 12 is located between cooling zone 11 and heating zone 13 and may contain semiconductor structures 6 to be cleaned, including but not limited to wafers. Heating zone 13 is located at the bottom of cleaning chamber 1.

[0087] Continue to refer to Figure 1 The cleaning apparatus also includes a gas generator 2. Gas generator 2 can be located within heating region 13 or outside cleaning chamber 1 and connected to heating region 13 via a heat transfer pipe or other means. Gas generator 2 is used to heat heating region 13 and generate a cleaning gas, such as water, acid, alkali, or organic solvent vapor. Once generated, the cleaning gas moves toward cleaning region 12 and performs a preliminary cleaning of the semiconductor structure within cleaning region 12.

[0088] Continue to refer to Figure 1 、 Figure 5 and Figure 7The cleaning device further includes a fixing component 3. The fixing component 3 is used to fix the semiconductor structure 6 in the cleaning area 12. In some embodiments, the semiconductor structure 6 includes a first surface 61 and a second surface 62 that are opposite to each other. A graphic area 63 with a preset aspect ratio is provided on the second surface 62 of the semiconductor structure 6. In some embodiments, the cleaning device of the present disclosure can well clean the semiconductor structure 6 with a preset aspect ratio, for example, the preset aspect ratio can be greater than or equal to 5. It should be noted that, referring to Figure 5 As shown, during various semiconductor manufacturing processes, the semiconductor structure 6 typically undergoes multiple steps, such as thin film deposition, etching, and polishing, thereby forming a pattern region 63 on a functional surface of the semiconductor structure 6, such as the second surface 62. These process steps may cause various particulate impurities P to accumulate within the pattern region 63. In this embodiment, the second surface 62 of the semiconductor structure 6 is positioned toward the heating region 13, and the particulate impurities P in the pattern region 63 are cleaned using a cleaning gas generated by the gas generator 2.

[0089] Reference Figure 1 and Figure 10 The cleaning apparatus further includes a cooling assembly 4. The cooling assembly 4 is configured to cool the first surface 61 of the semiconductor structure 6, condensing the cleaning gas entering the pattern region 63 into a cleaning liquid. It should be noted that when particulate impurities P are present in the pattern region 63, the condensed cleaning liquid will be coated with the particulate impurities P. At this time, since the second surface 62 of the semiconductor structure 6 is positioned vertically downward, the cleaning liquid coated with the particulate impurities P will flow downward along the sidewalls of the pattern region 63 due to gravity. During its descent, the cleaning liquid will be converted back into a gaseous form due to the pressure within the cleaning chamber 1 and the temperature increase of the gas generator 2.

[0090] Reference Figure 1 and Figure 6 The cleaning device further includes a recovery component 5 . The recovery component 5 is in communication with the cleaning chamber 1 and is used to recover the re-vaporized cleaning liquid, thereby discharging the particulate impurities accumulated in the pattern area 63 out of the cleaning chamber 1 .

[0091] In the cleaning apparatus of this embodiment, the gas generator 2 heats the heating region 13 and generates cleaning gas, which then cleans the second surface 62 of the semiconductor structure 6 having the patterned area 63. During the cleaning process, the cooling assembly 4 cools the first surface 61 of the semiconductor structure 6, condensing the cleaning gas into a cleaning liquid. The cleaning liquid envelops the particulate impurities P within the patterned area 63 and flows downward by gravity. During the flow, the cleaning liquid enveloping the particulate impurities P is re-vaporized and converted into a gaseous cleaning liquid. Finally, the re-vaporized cleaning liquid is recovered by the recovery assembly 5, thereby discharging the particulate impurities P out of the cleaning chamber 1. In the disclosed embodiment, the state change of the cleaning gas is utilized to efficiently clean the patterned area 63 of the semiconductor structure 6, effectively reducing the influence of surface capillary tension on the patterned area 63 of the semiconductor structure 6 during the cleaning process, thereby improving the cleaning quality.

[0092] like Figure 1 As shown, in some embodiments, the gas generator 2 includes a housing 21 and a heating assembly 22. The housing 21 includes a chamber for holding a cleaning agent, such as deionized water, acid, alkali, and suitable organic solvents, including but not limited to ethanol, propanol, and isopropanol. It should be noted that the top of the housing 21 is positioned toward the cleaning region 12 and may be directly opposite the patterned area 63 of the second surface 62 of the semiconductor structure 6. The heating assembly 22 may be disposed within the housing 21 or outside the cleaning chamber 1 and is configured to heat the heating region 13 and the cleaning agent within the chamber, thereby generating a cleaning gas from the cleaning agent. The generated cleaning gas enters the patterned area 63 during its rise and fills the area surrounding the particulate impurities P. The cooling assembly 4 then cools the first surface 61 of the semiconductor structure 6, condensing the cleaning gas into a cleaning liquid. The cleaning liquid then envelops the particulate impurities P and descends due to gravity, thereby removing the particulate impurities P from the patterned area 63.

[0093] like Figure 3 As shown, in some embodiments, the housing 21 includes a housing body 211 having an opening and a cover body 212 covering the opening. The housing body 211 may include a U-shaped groove, the interior of the U-shaped groove being configured as a receiving cavity, and the opening (not shown) is provided on the top surface of the housing body 211.

[0094] like Figure 1 As shown, a cleaning gas pipeline 7 connected to the accommodating cavity is provided on the shell body 211. After the semiconductor structure 6 completes the cleaning process, Figure 7As shown, a cleaning gas is introduced into the cleaning gas line 7 to dry the first surface 61, the second surface 62, and the pattern area 63 of the semiconductor structure 6. After the drying of the semiconductor structure 6 is completed, the supply of the cleaning gas is stopped. Then, the semiconductor structure 6 is removed from the cleaning chamber 1 using semiconductor equipment such as a robot. In some embodiments, the cleaning gas can continue to be introduced into the cleaning gas line 7. At the same time, the heating assembly 22 continues to heat and generate the cleaning gas from the cleaning agent. Under the combined action of the cleaning gas and the cleaning gas, a self-cleaning process is performed on the interior of the cleaning chamber 1. In some embodiments, the cleaning gas includes an inert gas.

[0095] Continue to refer to Figure 1 A liquid supply line 8 is also provided on the shell body 211. One end of the liquid supply line 8 is connected to the accommodating cavity, and the other end of the liquid supply line 8 can be connected to the first liquid storage tank 81 storing the cleaning agent for conveying the cleaning agent. Furthermore, in some embodiments, the liquid supply line 8 can also include an air inlet device (not shown in the figure), which is connected to the first liquid storage tank 81 so that gas, such as carbon dioxide gas, can be introduced into the first liquid storage tank 81. When deionized water is stored in the first liquid storage tank 81, the introduction of carbon dioxide can reduce the surface tension of water molecules, thereby improving the cleaning effect when cleaning the surface of the semiconductor structure 6. Of course, the gas introduced is not limited to this, and inert gas, as well as some non-corrosive and non-toxic gases, can also be used. Among them, the cleaning gas line 7 and the liquid supply line 8 are located on different sides of the shell body 211 to reasonably arrange the various components of the cleaning device.

[0096] Reference Figure 1 and Figure 6 A gas outlet 2121 is provided on the cover 212. The gas outlet 2121 can be located at the top of the cover 212 and opposite the pattern area 63 of the semiconductor structure 6. The cleaning gas introduced by the cleaning gas pipeline 7 and the cleaning gas generated by the heating component 22 heating the cleaning agent are both outputted outward through the gas outlet 2121.

[0097] In this embodiment, a cleaning gas pipeline 7 and a liquid supply pipeline 8 are set in the cleaning chamber 1, and together with a cover body 212 provided with a gas outlet 2121 and a heating component 3, the cleaning efficiency can be effectively improved. At the same time, the drying treatment of the cleaned semiconductor structure 6 and the subsequent self-cleaning process of the cleaning chamber 1 can also be quickly realized.

[0098] In some embodiments, as Figure 1 and Figure 9As shown, with the longitudinal section of the cover body 212 as the projection surface, the projection shape of the cover body 212 on the projection surface includes one of a conical shape, a semi-elliptical shape, and a concave shape. In this embodiment, the number of gas outlets 2121 on the cover body 212 is multiple, and they are evenly distributed on the cover body 212. It should be noted that the multiple gas outlets 2121 can be arranged in a circular array, or in a rectangular array, or are arranged at intervals, so as to facilitate the uniform delivery of the cleaning gas and / or the cleaning gas to the graphic area 63 of the semiconductor structure 6, reduce the time difference between the graphic areas 63 of various areas on the second surface 62 of the semiconductor structure 6 being exposed to the cleaning gas and / or the cleaning gas, and thus reduce the time cost of the cleaning and drying process of the semiconductor structure 6.

[0099] like Figure 1 and Figure 2 As shown, in some embodiments, the heating component 22 includes a first chuck 221 and a first heater 222. It should be noted that a liquid flow pipeline may be provided in the shell body 211, and the first chuck 221 may be provided in the shell body 211 and located below the liquid flow pipeline to heat the cleaning liquid in the flowing liquid pipeline. In this embodiment, the first chuck 211 may be integrally formed with the shell body 211 and the liquid flow pipeline. The first chuck 221 may include an electrostatic chuck. In another embodiment, the first chuck 221 may be provided on the bottom surface of the outer side of the shell body 211, and a liquid flow pipeline may be provided on the bottom surface inside the shell body 211, that is, the first chuck 221 and the shell body 211 are designed as a split structure.

[0100] The first heater 222 is disposed on the housing body 211 and connected to the first chuck 221 for heating the first chuck 221. The first heater 222 can be fixed to the bottom of the housing 21 and can be an electric heating tube.

[0101] In this embodiment, the first chuck 221 is quickly heated by the first heater 222 , so that the cleaning agent can be quickly converted into a gaseous cleaning gas, which can effectively reduce the cleaning cycle of the semiconductor structure 6 .

[0102] Continue to refer to Figure 1 As shown, a first driving member 9 is provided on the cleaning chamber 1. The output shaft end of the first driving member is connected to the gas generator 2, and is used to adjust the relative distance between the gas generator 2 and the fixed component 3. The first driving member 9 is connected to the shell 21 in the gas generator 2, and can drive the shell 21 to move up and down in the vertical direction. Thereby adjusting the relative distance between the shell 21 and the semiconductor structure 6. In some embodiments, the first driving member 9 includes a first driving motor, which can realize the adjustment of the first distance L1 between the shell 21 and the semiconductor structure 6, referring to Figure 11 As shown, the length of the first distance L1 ranges from 20 mm to 50 mm, for example, 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, 45 mm, and 50 mm. When the temperature within the cleaning chamber 1 rises to a predetermined temperature, the relative distance between the housing 21 and the semiconductor structure 6 can be adjusted by the first driving member to bring the semiconductor structure 6 closer to the gas generator 2, thereby fine-tuning the surface temperature of the patterned area 63 of the semiconductor structure 6, thereby further improving the cleaning quality and drying quality of the semiconductor structure 6.

[0103] like Figures 1 to 5 As shown, the fixing assembly 3 includes a fixing frame 31 and a fixing rod 32 , wherein the first surface 61 of the semiconductor structure 6 is arranged toward the fixing frame 31 .

[0104] There are multiple fixing rods 32, which are evenly spaced and arranged on the fixing frame 31, and one end of the fixing rod 32 is arranged toward the gas generator 2. A fixing portion 321 for supporting the semiconductor structure 6 is provided at the bottom end of each fixing rod 32. Figure 8 As shown, a plurality of fixing portions 321 and the fixing frame 31 enclose an accommodating space 33 . The semiconductor structure 6 is disposed in the accommodating space 33 , and the edge of the semiconductor structure 6 overlaps the fixing portion 321 .

[0105] In some embodiments, there are at least three fixing rods 32. When there are three fixing rods 32, the triangle formed by the three fixing portions 321 is an isosceles triangle or an equilateral triangle, so that the semiconductor structure 6 can be stably placed in the accommodating space 33. It should be noted that the semiconductor structure 6 can be placed in the accommodating space 33 by a robot in the semiconductor equipment.

[0106] In this embodiment, multiple fixing rods 32 are provided and the fixing portion 321 at the bottom of the fixing rod 32 is used to make the placement of the semiconductor structure 6 more stable, thereby preventing the position of the semiconductor structure 6 from shifting during the cleaning process, thereby further improving the cleaning quality of the semiconductor structure 6.

[0107] Reference Figure 1As shown, in some embodiments, the cooling assembly 4 includes a second chuck 41 and a cooling pipe 42 provided on the second chuck 41. The second chuck 41 is connected to the cleaning chamber 1 through a second driving member 10, wherein the second chuck 41 includes an electrostatic chuck, and the second driving member 10 includes a second driving motor, which is arranged at the top of the cleaning chamber 1, and the output shaft end of the second driving motor passes downward through the top of the cleaning chamber 1 and the fixing frame 31 in sequence and then is connected to the second chuck 41. The second driving member 10 is used to drive the second chuck 41 to abut against the first surface 61 of the semiconductor structure 6. In this embodiment, by cooperating with a plurality of fixing parts 321 on the second chuck 41 that can move up and down, the semiconductor structure 6 can be stably fixed in the accommodating space to avoid the position of the semiconductor structure 6 from being offset during cleaning, so as to further improve the cleaning quality of the semiconductor structure 6.

[0108] Reference Figure 1 and Figure 11 As shown, the second driving member 10 can drive the second chuck 41 to move up and down, and the displacement distance L2 of the second chuck 41 ranges from 15mm to 30mm, for example, 15mm, 18mm, 20mm, 25mm, 30mm, so that the semiconductor structure 6 can be placed in the accommodating space 33, or the semiconductor structure 6 can be taken out from the accommodating space 33.

[0109] Reference Figure 11 As shown, it should be noted that, in some embodiments, there is an initial distance L3 between the first chuck 221 and the second chuck 41, and the length range of the initial distance L3 is 80mm-120mm, so as to ensure the uniformity of the temperature rise in various areas of the second surface 62 of the semiconductor structure 6 during the heating process, thereby facilitating the subsequent cleaning of the semiconductor structure 6.

[0110] Reference Figure 1 and Figure 10 As shown, in some embodiments, the cooling circuit 42 includes a cooling loop 421 and a cooling branch 422. There are multiple cooling loops 421, and the multiple cooling loops 421 are concentrically arranged. The multiple cooling loops 421 can be arranged on the upper surface or lower surface of the second chuck 41, or arranged inside the second chuck 41. A cooling inlet 423 is provided on one of the cooling loops 421, and the cooling inlet 423 can be connected to the second liquid storage tank 425 storing the coolant through a connecting pipe. A cooling outlet 424 is provided on another cooling loop 421, and the cooling outlet 424 can be connected to the second liquid storage tank 425 storing the coolant through a connecting pipe.

[0111] Adjacent cooling loops 421 are connected by a plurality of spaced-apart cooling branches 422. Along the direction extending from the edge to the center of the second chuck 41, the number of cooling branches 422 between adjacent cooling loops 421 in the first position is different from the number of cooling branches 422 between adjacent cooling loops 421 in the second position.

[0112] In this embodiment, a complete cooling circulation path is formed on the second chuck 41 by multiple concentrically arranged cooling loops 421 in conjunction with the cooling branches 422, the cooling inlet 423 and the cooling outlet 424, so as to improve the cooling speed and cooling effect of the first surface 61 of the semiconductor structure 6, increase the condensation speed of the cleaning gas in the graphic area 63, and reduce the cleaning cycle of the semiconductor structure 6.

[0113] Reference Figure 1 and Figure 6 As shown, in some embodiments, the recovery component 5 includes a vacuum pump 51 and a recovery pipeline 52. The vacuum pump 51 is connected to the recovery pipeline 52, and the recovery pipeline 52 is connected to the cleaning chamber 1. A first stop valve 53 is provided on the recovery pipeline 52. The temperature in the recovery pipeline 52 is greater than or equal to the boiling point of the cleaning liquid, for example, it can be greater than 100°C, so as to ensure that the cleaning liquid wrapped with particulate impurities P is always in a gaseous state, and then is pumped away by the vacuum pump 51 for recovery. The vacuum pump 51 is used to form a vacuum in the cleaning chamber 1, and to discharge the cleaning liquid wrapped with particulate impurities P and vaporized again to the outside of the cleaning chamber 1 through the recovery pipeline 52. It should be noted that the recovery pipeline 52 in the cleaning chamber 1 may include a plurality of branch pipelines, and the plurality of branch pipelines are evenly spaced on the inner side of the inner wall of the cleaning chamber 1 to evenly discharge the vaporized cleaning liquid in the cleaning chamber 1 to the outside of the cleaning chamber 1.

[0114] In this embodiment, the vacuum pump 51, the recovery line 52 and the first stop valve 53 are used to quickly discharge the cleaning liquid containing the particulate impurities P and vaporized again to the outside of the cleaning chamber 1, which is convenient for operation and can effectively reduce the cleaning cycle of the semiconductor structure 6.

[0115] Reference Figure 1 As shown, in some embodiments, the recovery assembly 5 may further include a purge line 54. The two ends of the purge line 54 are respectively connected to the housing 21 in the gas generator 2 and the recovery line 52. It should be noted that some of the cleaning liquid encapsulated with particulate impurities may not be re-vaporized during the descent process, but instead enter the accommodating cavity through the gas outlet 2121 on the cover 212. In this embodiment, the purge line can be used to discharge the portion of the cleaning liquid encapsulated with particulate impurities P deposited in the housing 21 to the outside of the cleaning chamber 1, thereby improving the cleaning quality of the semiconductor structure.

[0116] Reference Figure 1 As shown, in order to facilitate the control of the conduction state of the purification pipeline 54, a second stop valve 55 is provided on the purification pipeline 54.

[0117] In some embodiments, as Figure 1 As shown, the cleaning device also includes a second heater 110, which is connected to the cleaning chamber 1. When the semiconductor structure 6 is cleaned and transferred to the cleaning chamber 1, the second heater 110 is used to dry the cleaning chamber 1 to facilitate subsequent cleaning of the semiconductor structure 6.

[0118] like Figure 12 As shown, the present disclosure provides a cleaning method for a cleaning device in an exemplary embodiment, the cleaning method comprising:

[0119] Step S100: placing a semiconductor structure in a fixing assembly in a cleaning chamber, such that a second surface of a pattern region having a preset aspect ratio on the semiconductor structure faces a gas generator.

[0120] Step S200: using a gas generator to perform a first temperature increase process on the heating area, so that the liquid cleaning agent in the gas generator is converted into a gaseous cleaning gas to clean the second surface.

[0121] Step S300 : performing a cooling process on the cleaned first surface of the semiconductor structure using a cooling assembly to condense the cleaning gas into a cleaning liquid.

[0122] Step S400: The heating area is heated for the second time by the gas generator, and the pressure in the cleaning chamber is adjusted to vaporize the cleaning liquid again.

[0123] Step S500: using a recovery component to discharge the vaporized cleaning liquid.

[0124] For example, in step S100, after the semiconductor structure 6 undergoes various process steps, a pattern region 63 having a predetermined aspect ratio is formed on the second surface 62 (i.e., the top surface) of the semiconductor structure 6. Before entering the cleaning chamber 1, the semiconductor structure 6 can be flipped 180 degrees by a semiconductor device such as a robot, so that the second surface 62 of the semiconductor structure 6 faces downward.

[0125] Then, the semiconductor structure 6 is delivered to the fixing assembly 3 by the robot arm, and the second driving member 10 drives the second chuck 41 to move downward, and cooperates with the fixing portion 321 of multiple fixing rods 32 to firmly fix the semiconductor structure 6 in the accommodating space 33, so that the graphic area 63 is set toward the gas generator 2.

[0126] In step S200, the gas generator 2 is used to perform the first temperature raising treatment on the heating area 13, so that the liquid cleaning liquid in the shell 21 is converted into gaseous cleaning liquid to produce cleaning gas. The cleaning gas is discharged through the gas outlet 2121 of the cover body 212. The cleaning gas enters the graphic area 63 during the rising process and fills the area around the particulate impurities P in the graphic area 63.

[0127] In step S300, cooling pipe 42 is used to cool second chuck 41, thereby reducing the surface temperature of first surface 61 of semiconductor structure 6, thereby forming a temperature difference between first surface 61 and second surface 62 of semiconductor structure 6. Simultaneously, the pressure within cleaning chamber 1 is controlled to condense cleaning gas within pattern area 63 into a liquid cleaning liquid containing particulate impurities P. The cleaning liquid then flows out along the sidewalls of the structure having a predetermined aspect ratio within pattern area 63 due to gravity.

[0128] In step S400, the heating area is heated a second time by gas generator 2, while the pressure in cleaning chamber 1 is adjusted. Due to the pressure in cleaning chamber 1 and the high temperature of first chuck 221, the cleaning liquid containing particulate matter P is converted back into gaseous form during its descent.

[0129] In step S500 , the pressure in the cleaning chamber 1 is reduced, and the vaporized cleaning liquid is discharged into the cleaning chamber 1 by using the vacuum pump 51 in the recovery assembly 5 .

[0130] It should be noted that step S500 further includes: after the semiconductor structure 6 is cleaned, heating the second chuck 41 and simultaneously introducing an inert gas through the cleaning gas line 7 to dry the cleaned semiconductor structure 6 .

[0131] After the drying process is completed, the cleaning chamber 1 is evacuated by the vacuum pump 51 to maintain the vacuum state in the cleaning chamber 1, and then the second driving member 10 drives the second chuck 41 to move upward to release the fixed state of the semiconductor structure 6, and the semiconductor structure 6 is transferred out of the cleaning chamber 1 using a robot.

[0132] After the semiconductor structure 6 is removed from the cleaning chamber 1, the second chuck 41 is heated. Cleaning gas is then introduced through the cleaning gas line 7. Simultaneously, the cleaning agent is heated by the gas generator 2 to generate cleaning gas. The pressure within the cleaning chamber 1 is then increased to perform self-cleaning of the cleaning chamber 1.

[0133] The cleaning method of the cleaning device of this embodiment utilizes a gas generator 2 to heat and generate a cleaning gas, and the cleaning gas cleans the second surface 62 having a graphic area 63 on the semiconductor structure 6. During the cleaning process, the first surface 61 of the semiconductor structure 6 is cooled by the cooling component 4, so that the cleaning gas condenses into a cleaning liquid wrapped with particulate impurities P, and then the re-vaporized cleaning liquid is recovered by the recovery component 5. The graphic area 63 of the semiconductor structure 6 is efficiently cleaned by the change in state of the cleaning gas, effectively reducing the influence of surface capillary tension on the graphic area 63 of the semiconductor structure 6 during the cleaning process, thereby improving the cleaning quality.

[0134] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.

[0135] In the description of this specification, reference to the terms "embodiment", "exemplary embodiment", "some embodiments", "illustrative embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure.

[0136] In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any suitable manner in any one or more embodiments or examples.

[0137] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present disclosure.

[0138] It is to be understood that the terms "first", "second", etc. used in the present disclosure can be used to describe various structures in the present disclosure, but these structures are not limited by these terms. These terms are only used to distinguish a first structure from another structure.

[0139] In one or more of the accompanying drawings, identical elements are represented by similar reference numerals. For clarity, many parts in the accompanying drawings are not drawn to scale. In addition, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be described in a single figure. Many specific details of the present disclosure, such as device structure, materials, dimensions, processing techniques, and technologies, are described below to facilitate a clearer understanding of the present disclosure. However, as will be appreciated by those skilled in the art, the present disclosure may be practiced without following these specific details.

[0140] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A cleaning device, characterized in that: include: a cleaning chamber, wherein the cleaning chamber is configured to include a cooling area, a cleaning area, and a heating area that are sequentially spaced apart, and the cooling area is located above the heating area; a gas generator for heating the heating area and generating cleaning gas, the gas generator comprising a housing having a housing chamber for holding a cleaning agent and a heating assembly; the housing comprising a shell body having an opening and a cover body covering the opening; the shell body being provided with a cleaning gas pipeline and a liquid supply pipeline respectively connected to the housing chamber, the cleaning gas pipeline and the liquid supply pipeline being located on different sides of the shell body; the cleaning gas pipeline being used for drying the cleaning chamber after cleaning, the liquid supply pipeline being used for conveying the cleaning agent; the cover body being provided with a gas outlet, through which the cleaning gas is discharged; A fixing assembly, for fixing a semiconductor structure in the cleaning region, wherein the semiconductor structure has a first surface and a second surface disposed opposite to each other, the second surface having a patterned area with a preset aspect ratio, wherein the second surface faces the direction of the heating region; a cooling assembly in communication with the cooling region, configured to perform a cooling process on the first surface so as to condense the cleaning gas entering the pattern region into a cleaning liquid; A recovery component is communicated with the cleaning chamber and is used to recover the re-vaporized cleaning liquid.

2. The cleaning device according to claim 1, characterized in that The heating component is used to heat the heating area and heat the cleaning agent to generate the cleaning gas.

3. The cleaning device according to claim 1, characterized in that The projection shape of the cover body on the longitudinal section includes one of a conical shape, a semi-elliptical shape and a concave shape.

4. The cleaning device according to claim 1, characterized in that There are multiple gas outlets, which are arranged on the cover body.

5. The cleaning device according to claim 1, characterized in that The heating assembly includes a first chuck and a first heater, wherein the first chuck is disposed in the housing; The first heater is disposed on the housing and connected to the first chuck for heating the first chuck.

6. The cleaning device according to claim 1, characterized in that: The cleaning chamber is provided with a first driving member, the output shaft end of the first driving member is connected to the gas generator, and the first driving member is used to adjust the relative distance between the gas generator and the fixed component.

7. The cleaning device according to claim 1, characterized in that The fixing assembly includes a fixing frame and a fixing rod; The fixing rod is arranged on a side of the fixing frame facing the gas generator, and there are multiple fixing rods. The bottom end of each fixing rod is provided with a fixing portion for supporting the semiconductor structure, and an accommodating space is enclosed between the multiple fixing portions and the fixing frame; Wherein, the first surface is arranged toward the fixing frame.

8. The cleaning device according to claim 1, characterized in that The cooling assembly includes a second chuck and a cooling pipeline provided on the second chuck. The second chuck is connected to the cleaning chamber via a second driving member. The second driving member is used to drive the second chuck to abut against the first surface.

9. The cleaning device according to claim 8, characterized in that: The cooling pipeline includes a cooling loop and a cooling branch; The number of the cooling loops is multiple and concentrically arranged, and a cooling inlet and a cooling outlet are provided on the cooling loops, wherein the cooling inlet and the cooling outlet are located on different cooling loops; The cooling branches are used to connect adjacent cooling loops, and the numbers of the cooling branches between adjacent cooling loops are different.

10. The cleaning device according to claim 1, characterized in that The recovery component includes a vacuum pump and a recovery pipeline. The vacuum pump is communicated with the recovery pipeline. The recovery pipeline is communicated with the cleaning chamber. A first stop valve is provided on the recovery pipeline.

11. The cleaning device according to claim 10, characterized in that: The recovery component further includes a purification pipeline, which is communicated with the gas generator and the recovery pipeline respectively, and a second stop valve is provided on the purification pipeline.

12. The cleaning device according to claim 1, characterized in that The cleaning device further includes a second heater, which is communicated with the cleaning chamber and is used to dry the cleaning chamber.

13. The cleaning device according to any one of claims 1 to 12, characterized in that: The preset aspect ratio is greater than or equal to 5.

14. A cleaning method for a cleaning device, characterized in that: Applied to the cleaning device according to any one of claims 1 to 13, the cleaning method comprises: Placing the semiconductor structure in a fixing assembly within the cleaning chamber so that the second surface of the pattern region having a preset aspect ratio on the semiconductor structure faces the gas generator; Using the gas generator to perform a first temperature increase on the heating area, so that the liquid cleaning agent in the gas generator is converted into a gaseous cleaning gas to clean the second surface; performing a cooling process on the cleaned first surface of the semiconductor structure using a cooling assembly to condense the cleaning gas into a cleaning liquid; performing a second temperature raising process on the heating area by the gas generator and adjusting the pressure in the cleaning chamber so as to vaporize the cleaning liquid again; The vaporized cleaning liquid is discharged using a recovery component.

15. The cleaning method of a cleaning device according to claim 14, characterized in that: The cleaning method further comprises: The cleaned semiconductor structure is moved out of the cleaning chamber, and the cleaning chamber is cleaned.

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