A satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component

Abstract

The present invention provides a satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component. The substrate comprises: a multi-layer microwave dielectric layer, and a matching circuit arranged inside the multi-layer microwave dielectric layer. The matching circuit comprises a plurality of metallized vertical through holes and a plurality of annular copper foils connected in series. Each metallized vertical through hole corresponds to and penetrates each microwave dielectric layer above the bottom layer, wherein the diameter of each metallized vertical through hole is different. An annular copper foil is arranged at the connection of two adjacent metallized vertical through holes, and the annular copper foil is arranged between the microwave dielectric layers and around the metallized vertical through hole, wherein the outer diameter of each annular copper foil is different, and the inner ring of the annular copper foil is electrically connected to the metallized vertical through hole. The present invention adopts a three-dimensional method to achieve impedance matching through the metallized vertical through hole and the annular copper foil inside the multi-layer microwave dielectric layer, and the matching circuit occupies a small area, thereby reducing the volume of the satellite-borne multi-layer microwave substrate and thus reducing the weight.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave components, and in particular to a satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component. Background Art

[0002] Satellite-borne microwave components are widely used in the aerospace field. Limited by the load-bearing performance of launch vehicles, satellite-borne components have high weight requirements. In order to improve the integration of microwave components and reduce the volume and weight of microwave components, a multi-layer microwave substrate method is usually used. A multi-layer microwave substrate is made by mixing and pressing two or more microwave dielectric layers, usually with 6 or 8 layers. The satellite-borne microwave components are connected to the insulators of the entire satellite to achieve microwave communication. The multi-layer microwave substrate of the satellite-borne microwave component cannot be directly soldered to the insulator with solder, because the hard connection will generate welding stress and reduce the connection reliability. Gold-plated copper tape is usually used for transition welding between the two. The flexible gold-plated copper tape connects the multi-layer microwave substrate and the insulator to release potential welding stress. The flexible gold-plated copper tape will cause the deterioration of the transmission standing wave, which in turn leads to poor microwave performance. Therefore, it is necessary to perform microwave impedance matching based on the multi-layer microwave substrate, gold-plated copper tape and insulator to optimize the transmission standing wave to the best.

[0003] There are two existing impedance matching methods. The first is to weld independent capacitors or inductors on the top layer of the multi-layer microwave substrate for impedance matching. By adjusting the capacitance value or inductance value, the microwave transmission is adjusted to the optimal value. This matching method adds independent capacitors and inductors, which increases the weight. The second method is to use special-shaped transmission strip lines for impedance matching. Through software simulation, the size of the transmission strip lines is changed on the top layer of the multi-layer microwave substrate, and the capacitor blocks and inductor blocks are pre-designed to match the standing waves. This method is forward-looking, but it requires a larger space to implement the capacitor blocks and inductor blocks, which will increase the area of ​​the microwave substrate, thereby increasing the weight of the satellite-borne microwave components. Summary of the invention

[0004] The embodiments of the present invention provide a satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component to solve the problems of large volume and heavy weight of existing satellite-borne microwave components.

[0005] In the first aspect, an embodiment of the present invention provides a satellite-borne multilayer microwave substrate, comprising: a multilayer microwave dielectric layer, a matching circuit arranged inside the multilayer microwave dielectric layer, wherein one end of the matching circuit is used to connect a microwave chip and the other end is used to connect a satellite-borne microwave antenna. The matching circuit comprises a plurality of metallized vertical through holes connected in series and a plurality of annular copper foils. Each metallized vertical through hole corresponds to and penetrates each microwave dielectric layer above the bottom layer, wherein the diameter of each metallized vertical through hole is different. An annular copper foil is arranged at the connection of two adjacent metallized vertical through holes, and the annular copper foil is arranged between the microwave dielectric layers and around the metallized vertical through hole, wherein the outer diameter of each annular copper foil is different, and the inner ring of the annular copper foil is electrically connected to the metallized vertical through hole.

[0006] In a possible implementation, the axes of the metallized vertical through holes coincide with each other.

[0007] In a possible implementation, the axis of each annular copper foil coincides with the axis of each metallized vertical through hole.

[0008] In a possible implementation manner, a grounding copper foil is further provided between each microwave dielectric layer, wherein the grounding copper foil and the annular copper foil are not connected to each other.

[0009] In a possible implementation, the area of ​​the bottom microwave dielectric layer is greater than the area of ​​the upper microwave dielectric layer. A gold-plated copper strip is also provided on the upper surface of the bottom microwave dielectric layer, wherein one end of the gold-plated copper strip is connected to the metallized vertical through hole, and the other end is used to connect to the satellite-borne microwave antenna.

[0010] In a possible implementation manner, the number of microwave dielectric layers is greater than or equal to 6.

[0011] In a possible implementation, the inter-board capacitance between two adjacent annular copper foils satisfies the following formula:

[0012] C=εs / (4πkd)

[0013] Among them, ε is the relative dielectric constant, s is the facing area between two adjacent annular copper foils, d is the distance between two adjacent annular copper foils, and k is the electrostatic constant.

[0014] In one possible implementation, the inductance formula of the metallized vertical via satisfies the following formula:

[0015] L=(Kμ0μ s S) / D

[0016] Where K is the ratio of the radius to the height of the metallized vertical through hole, μ0 is the vacuum permeability, and μ sis the relative magnetic permeability, S is the cross-sectional area of ​​the metallized vertical through hole, and D is the height of the metallized vertical through hole.

[0017] In a second aspect, an embodiment of the present invention provides a satellite-borne multi-layer microwave component, comprising a satellite-borne multi-layer microwave substrate provided in any possible implementation of the first aspect. The satellite-borne multi-layer microwave component further comprises a microwave chip.

[0018] The embodiment of the present invention provides a satellite-borne multilayer microwave substrate and a satellite-borne multilayer microwave component, wherein the substrate comprises: a multilayer microwave dielectric layer, a matching circuit arranged inside the multilayer microwave dielectric layer, wherein one end of the matching circuit is used to connect a microwave chip, and the other end is used to connect a satellite-borne microwave antenna. The matching circuit comprises a plurality of metallized vertical through holes connected in series and a plurality of annular copper foils. Each metallized vertical through hole corresponds to and penetrates each microwave dielectric layer above the bottom layer, wherein the diameter of each metallized vertical through hole is different. An annular copper foil is arranged at the connection of two adjacent metallized vertical through holes, and the annular copper foil is arranged between the microwave dielectric layers and around the metallized vertical through hole, wherein the outer diameter of each annular copper foil is different, and the inner ring of the annular copper foil is electrically connected to the metallized vertical through hole. The present invention sets a matching circuit inside the multi-layer microwave dielectric layer, each metallized vertical through hole penetrates each microwave dielectric layer to form an inductor, and each annular copper foil connected to the metallized vertical through hole between each microwave dielectric layer forms an inter-board capacitor, and the optimal diameter of each metallized vertical through hole and the optimal outer diameter of each annular copper foil can be determined by simulation to achieve impedance matching. The impedance matching is achieved by using a three-dimensional method inside the multi-layer microwave dielectric layer through the metallized vertical through hole and the annular copper foil, and the matching circuit occupies a small area, which reduces the volume of the satellite-borne multi-layer microwave substrate, thereby reducing the weight. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 is a schematic diagram of the cross-sectional structure of a satellite-borne multi-layer microwave substrate provided by an embodiment of the present invention;

[0021] Figure 2 It is a schematic diagram of the structure of the microwave dielectric interlayer through hole and the copper foil provided by an embodiment of the present invention;

[0022] Figure 3 It is a top view of the step groove on the bottom microwave dielectric layer provided by an embodiment of the present invention;

[0023] Figure 4 It is a schematic diagram of the cross-sectional structure of a satellite-borne multi-layer microwave assembly provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0024] In order to enable people in the technical field to better understand the present solution, the technical solution in the embodiment of the present solution will be clearly described below in conjunction with the drawings in the embodiment of the present solution. Obviously, the described embodiment is an embodiment of a part of the present solution, not all of the embodiments. Based on the embodiments in the present solution, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present solution.

[0025] The term "including" and any other variations in the specification and claims of this solution and the above drawings mean "including but not limited to", and is intended to cover non-exclusive inclusions and is not limited to the examples listed in the text. In addition, the terms "first" and "second" are used to distinguish different objects, not to describe a specific order.

[0026] The following is a detailed description of the implementation of the present invention in conjunction with the specific drawings:

[0027] Satellite-borne microwave components are widely used in the aerospace field. Due to their high cost and poor maintainability, satellite-borne microwave components have extremely high reliability requirements. Usually, only mature processes and parameters can be applied to satellite-borne microwave components, which results in relatively backward processes for satellite-borne components.

[0028] Due to the load-bearing capacity of the launch vehicle, the weight requirements of the satellite-borne components are high. Adding 1g of weight is a performance test for the launch vehicle. In order to improve the integration of microwave components and reduce the volume and weight of microwave components, a multi-layer microwave substrate method is usually used. A multi-layer microwave substrate is made by mixing and pressing two or more microwave dielectric layers, usually 6 or 8 layers.

[0029] The satellite-borne microwave components are connected to the insulators of the entire satellite to achieve microwave communication. The multi-layer microwave substrate of the satellite-borne microwave components cannot be directly soldered to the insulator with solder, because the hard connection will generate welding stress and reduce the connection reliability. Gold-plated copper tape is usually used for transition welding between the two. The flexible gold-plated copper tape connects the multi-layer microwave substrate and the insulator to release potential welding stress. However, the flexible gold-plated copper tape will cause the deterioration of the transmission standing wave, which will lead to poor microwave performance. Therefore, it is necessary to perform microwave impedance matching based on the multi-layer microwave substrate, gold-plated copper tape and insulator to optimize the transmission standing wave to the best.

[0030] There are two existing impedance matching methods. The first is to solder independent capacitors or inductors on the top layer of a multi-layer microwave substrate for impedance matching. By adjusting the capacitance or inductance value, the microwave transmission is adjusted to the optimal value. This matching method adds independent capacitors and inductors, which increases the weight. Moreover, this method is the most primitive adjustment method, which is a late-stage remedial method and is not forward-looking.

[0031] The second method is to use special-shaped transmission strips for impedance matching. Through software simulation, the size of the transmission strips is changed on the top layer of the multi-layer microwave substrate, and the capacitor blocks and inductor blocks are pre-designed to match the standing waves. This method is forward-looking, but it requires a larger space to realize the capacitor blocks and inductor blocks, which will increase the area of ​​the microwave substrate and thus increase the weight of the satellite-borne microwave components.

[0032] The embodiments of the present invention provide a satellite-borne multi-layer microwave substrate and a satellite-borne multi-layer microwave component to solve the problems of large volume and heavy weight of existing satellite-borne microwave components.

[0033] Figure 1 It is a schematic diagram of the cross-sectional structure of a satellite-borne multi-layer microwave substrate provided in an embodiment of the present invention. Figure 2 Schematic diagram of the structure of microwave dielectric interlayer through hole and copper foil provided by an embodiment of the present invention. Figure 1 , Figure 2 ,include:

[0034] The multi-layer microwave dielectric layer 1 is provided with a matching circuit inside the multi-layer microwave dielectric layer 1, wherein one end of the matching circuit is used to connect to the microwave chip, and the other end is used to connect to the satellite-borne microwave antenna.

[0035] The matching circuit includes a plurality of metallized vertical vias 2 and a plurality of annular copper foils 3 connected in series.

[0036] Each metallized vertical through hole 2 passes through each microwave dielectric layer 1 above the bottom layer in a one-to-one correspondence, wherein the diameters of each metallized vertical through hole 2 are different.

[0037] An annular copper foil 3 is arranged at the connection of two adjacent metallized vertical through holes 2, and the annular copper foil 3 is arranged between the microwave dielectric layers 1 and surrounds the metallized vertical through hole 2, wherein the outer diameters of the annular copper foils 3 are different, and the inner ring of the annular copper foil 3 is electrically connected to the metallized vertical through hole 2.

[0038] A matching circuit is provided inside the multi-layer microwave dielectric layer 1. One end of the matching circuit is used to connect the microwave chip, and the other end is used to connect the satellite-borne microwave antenna. That is, the matching circuit connects the microwave chip and the satellite-borne microwave antenna to achieve impedance matching between the microwave chip and the satellite-borne microwave antenna.

[0039] The matching circuit arranged inside the multi-layer microwave dielectric layer 1 includes a plurality of metallized vertical through holes 2 and a plurality of annular copper foils 3. The metallized vertical through holes 2 are through holes that vertically penetrate the microwave dielectric layer 1, and the through holes are filled with metal materials. The plurality of metallized vertical through holes 2 are connected in series. Each metallized vertical through hole 2 corresponds to and penetrates each microwave dielectric layer 1 above the bottom layer. The vertical through holes usually arranged inside the microwave dielectric layer 1 are used to realize interlayer interconnection, and the diameters of the through holes are the same, which is convenient for processing.

[0040] Exemplarily, the diameters of the above-mentioned metallized vertical through holes 2 are different. The height of each metallized vertical through hole 2 is the same as the thickness of the corresponding microwave dielectric layer 1. The larger the diameter of the metallized vertical through hole 2, the smaller the inductance value of the metallized vertical through hole 2. The specific diameter of each metallized vertical through hole 2 can be determined by impedance matching simulation.

[0041] An annular copper foil 3 is provided at the connection of two adjacent metallized vertical through holes 2. Two adjacent metallized vertical through holes 2 are connected to each other, and an annular copper foil 3 is provided at the above connection. The annular copper foil 3 is provided between the microwave dielectric layers 1. The annular copper foil 3 is provided around the metallized vertical through hole 2. The inner ring of the annular copper foil 3 is electrically connected to the metallized vertical through hole 2. An inter-board capacitor is formed between the two annular copper foils 3. The distance between the two annular copper foils 3 is equal to the thickness of the microwave dielectric layer 1. The larger the facing area between the two annular copper foils 3, the larger the capacitance value thereof. Exemplarily, the outer diameters of the annular copper foils 3 are different, that is, the facing areas and capacitance values ​​of the adjacent annular copper foils 3 are different. The specific outer diameter of each annular copper foil 3 can be determined by impedance matching simulation.

[0042] The material and thickness of the microwave dielectric layer 1 can be determined based on the actual application scenario. Exemplarily, the material of the microwave dielectric layer 1 includes TSM-DS3 and FR4. Exemplarily, the thickness of the microwave dielectric layer 1 ranges from 10 mil to 20 mil. Exemplarily, the material of the microwave dielectric layer 1 of the top layer can be TSM-DS3, and the thickness can be 10 mil. Exemplarily, the material of the microwave dielectric layer 1 of the middle layer can be FR4. Exemplarily, the total thickness of each microwave dielectric layer 1 is less than 1.3 mm.

[0043] The microwave dielectric layer 1 on the top layer is used to place the microwave chip. The microwave chip is connected to the insulator through each metallized vertical through hole 2. The diameter of the metallized vertical through hole 2 of each layer and the outer diameter of the annular copper foil 3 can be determined based on the impedance simulation software. Exemplarily, the material of the metallized vertical through hole 2 is copper. The metallized vertical through hole 2 can form a microwave inductor, and the annular copper foil 3 of each layer can form an inter-board capacitor. The matching of the inductance value and the capacitance value can be achieved by the metallized vertical through hole 2 and the annular copper foil 3. The size of the metallized vertical through hole 2 determines the size of the inductance value. The larger the diameter, the smaller the inductance value. The size of the area of ​​the annular copper foil 3 determines the size of the capacitance. The larger the area of ​​the annular copper foil 3, the larger the capacitance value. Through simulation, the required inductance value and capacitance value can be determined, thereby achieving impedance matching of the standing wave of the insulator.

[0044] In the embodiment of the present invention, a matching circuit is arranged inside the multi-layer microwave dielectric layer 1, each metallized vertical through hole 2 penetrates each microwave dielectric layer 1 to form an inductor, each annular copper foil 3 connected to the metallized vertical through hole 2 is arranged between each microwave dielectric layer 1, and each annular copper foil 3 forms an inter-board capacitor, and the optimal diameter of each metallized vertical through hole 2 and the optimal outer diameter of each annular copper foil 3 can be determined by simulation to achieve impedance matching. In a three-dimensional manner, impedance matching is achieved inside the multi-layer microwave dielectric layer 1 through the metallized vertical through hole 2 and the annular copper foil 3, and the matching circuit occupies a small area, which reduces the volume of the satellite-borne multi-layer microwave substrate, thereby reducing the weight.

[0045] The starting point of the present invention is to design a method that utilizes the three-dimensional space of the circuit board to form capacitance and inductance through coupling between the layers of the circuit board to match the microwave characteristics and achieve good performance transmission of insulators, gold-plated copper strips and multi-layer microwave substrates. This solution can be implemented through software pre-simulation, which is forward-looking. At the same time, the transmission of three-dimensional space can greatly reduce the volume of the circuit board and achieve weight reduction.

[0046] Exemplarily, the axes of the metallized vertical through holes 2 do not overlap.

[0047] In a possible implementation, the axes of the metallized vertical through holes 2 coincide with each other. The axes of the metallized vertical through holes 2 coincide with each other, which facilitates the processing of the through holes and the alignment of the through holes during stacking.

[0048] Exemplarily, the diameter of the upper metallized vertical via 2 is greater than the diameter of the lower metallized vertical via 2 .

[0049] Exemplarily, the axis of each annular copper foil 3 does not coincide with the axis of each metallized vertical through hole 2 .

[0050] In a possible implementation, the axis of each annular copper foil 3 coincides with the axis of each metallized vertical through hole 2. When the axis of each annular copper foil 3 coincides with the axis of each metallized vertical through hole 2, the facing area of ​​two adjacent annular copper foils 3 is the largest, the capacitance value is the largest, and the copper foil area required to achieve the same capacitance value is the smallest.

[0051] In a possible implementation, a grounding copper foil 4 is further provided between each microwave dielectric layer 1 , wherein the grounding copper foil 4 is not connected to the annular copper foil 3 . That is, the grounding copper foil 4 is provided between the microwave dielectric layers 1 and outside the annular copper foil 3 .

[0052] In the embodiment of the present invention, a grounding copper foil 4 which is not connected to the annular copper foil 3 is further provided between the microwave dielectric layers 1, thereby improving signal shielding.

[0053] Figure 3 FIG. 1 is a top view of the step groove on the bottom microwave dielectric layer provided by an embodiment of the present invention. Figure 3 :

[0054] In a possible implementation, the area of ​​the bottom microwave dielectric layer 1 is larger than the area of ​​the upper microwave dielectric layer 1. A gold-plated copper tape 5 is also provided on the upper surface of the bottom microwave dielectric layer 1, wherein one end of the gold-plated copper tape 5 is connected to the metallized vertical through hole 2, and the other end is used to connect to the satellite-borne microwave antenna.

[0055] Exemplarily, the gold-plated copper tape 5 is connected to the metallized vertical through hole 2 by a copper tape line 6, wherein the copper tape line 6 is arranged on the upper surface of the bottom microwave dielectric layer 1. Exemplarily, the width of the gold-plated copper tape 5 is 0.5 mm. Exemplarily, the width of the copper tape line 6 is 0.46 mm. The gold-plated copper tape 5 on the bottom microwave dielectric layer 1 is used for welding with the insulator. Exemplarily, the thickness of the bottom microwave dielectric layer 1 is 10 mil thick, and the material is FR4.

[0056] In order to utilize the three-dimensional space of the satellite-borne multi-layer microwave substrate, a step groove is dug in the multi-layer microwave substrate to realize a step groove type microwave substrate. A step groove structure is adopted, and the position of the step groove is at the edge of the circuit board. The step groove is opened to the position of the bottom microwave dielectric layer 1, and the position of the step groove retains the bottom microwave dielectric layer 1. Exemplarily, the area of ​​the step groove is 3mm*3mm.

[0057] In a possible implementation, the number of microwave dielectric layers 1 is greater than or equal to 6.

[0058] In a possible implementation, the inter-board capacitance between two adjacent annular copper foils 3 satisfies the following formula:

[0059] C=εs / (4πkd)

[0060] Wherein, ε is the relative dielectric constant, s is the facing area between two adjacent annular copper foils 3, d is the distance between two adjacent annular copper foils 3, and k is the electrostatic constant.

[0061] In a possible implementation, the inductance formula of the metallized vertical through hole 2 satisfies the following formula:

[0062] L=(Kμ0μ s S) / D

[0063] Where, K is the ratio of the radius to the height of the metallized vertical through hole 2, μ0 is the vacuum magnetic permeability, μ s is the relative magnetic permeability, S is the cross-sectional area of ​​the metallized vertical through hole 2 , and D is the height of the metallized vertical through hole 2 .

[0064] Figure 4 Schematic diagram of the cross-sectional structure of a satellite-borne multi-layer microwave assembly provided by an embodiment of the present invention. Figure 4 :

[0065] An embodiment of the present invention provides a satellite-borne multi-layer microwave component, comprising a satellite-borne multi-layer microwave substrate provided in any of the above possible implementations. The satellite-borne multi-layer microwave component also includes a microwave chip.

[0066] An embodiment of the present invention provides a method for preparing a satellite-borne multilayer microwave component. The corresponding microwave dielectric board material is selected according to the microwave frequency band. The materials of each layer can be different and are bonded by lamination to form a composite microwave substrate. The metallized vertical through hole 2 can be punched by back drilling. The step groove can be achieved by milling cutter cutting. The satellite-borne microwave substrate is fixed to the satellite-borne microwave component by screw fastening. The microwave chip can be fixed to the satellite-borne microwave substrate by reflow soldering.

[0067] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A satellite-borne multi-layer microwave substrate, characterized in that: include: A multi-layer microwave dielectric layer, a matching circuit arranged inside the multi-layer microwave dielectric layer, wherein one end of the matching circuit is used to connect to the microwave chip, and the other end is used to connect to the satellite-borne microwave antenna; the top microwave dielectric layer is used to place the microwave chip; The matching circuit includes a plurality of metallized vertical through holes and a plurality of annular copper foils connected in series; Each metallized vertical through hole passes through each microwave dielectric layer above the bottom layer in a one-to-one correspondence, wherein the diameters of each metallized vertical through hole are different; An annular copper foil is arranged at the connection of two adjacent metallized vertical through holes, and the annular copper foil is arranged between microwave dielectric layers and around the metallized vertical through hole, wherein the outer diameters of the annular copper foils are different, and the inner ring of the annular copper foil is electrically connected to the metallized vertical through hole; each metallized vertical through hole constitutes an inductor, and each annular copper foil constitutes an inter-board capacitor; the matching of the inductance value and the capacitance value is achieved through the metallized vertical through hole and the annular copper foil; the size of the metallized vertical through hole determines the size of the inductance value; the size of the annular copper foil area determines the size of the capacitance.

2. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The axes of the metallized vertical through holes coincide with each other.

3. The satellite-borne multi-layer microwave substrate according to claim 2, characterized in that: The axis of each annular copper foil coincides with the axis of each metallized vertical through hole.

4. The satellite-borne multi-layer microwave substrate according to claim 3, characterized in that: A grounding copper foil is also provided between each microwave dielectric layer, wherein the grounding copper foil and the annular copper foil are not connected to each other.

5. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The area of ​​the bottom microwave dielectric layer is greater than the area of ​​the upper microwave dielectric layer; A gold-plated copper tape is also provided on the upper surface of the bottom microwave dielectric layer, wherein one end of the gold-plated copper tape is connected to the metallized vertical through hole, and the other end is used to connect to the satellite-borne microwave antenna.

6. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The number of the microwave dielectric layers is greater than or equal to 6.

7. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The material of the metallized vertical via includes copper.

8. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The inter-board capacitance between two adjacent annular copper foils satisfies the following formula: C = εs / (4πkd) Among them, ε is the relative dielectric constant, s is the facing area between two adjacent annular copper foils, d is the distance between two adjacent annular copper foils, and k is the electrostatic constant.

9. The satellite-borne multi-layer microwave substrate according to claim 1, characterized in that: The inductance formula of the metallized vertical through hole satisfies the following formula: L=(Kμ0μ s S) / D Where K is the ratio of the radius to the height of the metallized vertical through hole, μ0 is the vacuum permeability, and μ s is the relative magnetic permeability, S is the cross-sectional area of ​​the metallized vertical through hole, and D is the height of the metallized vertical through hole.

10. A satellite-borne multi-layer microwave assembly, characterized in that: The satellite-borne multi-layer microwave substrate comprises any one of claims 1 to 9; the satellite-borne multi-layer microwave component further comprises a microwave chip.

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