Light-emitting devices and their fabrication methods

Abstract

This application discloses a light-emitting device and its fabrication method. The light-emitting device includes a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer. The first functional layer is disposed on the first electrode. The patterned insulating layer, the patterned second electrode, and the patterned second functional layer are sequentially stacked on the first functional layer. The orthographic projection of the patterned second electrode on the first functional layer lies within the orthographic projection of the patterned insulating layer on the first functional layer. The light-emitting layer covers the patterned second functional layer and the first functional layer. In this application, the orthographic projection of the patterned second electrode on the first functional layer is set to lie within the orthographic projection of the patterned insulating layer on the first functional layer, avoiding contact between the patterned second functional layer and the first functional layer, thereby preventing leakage current problems in the light-emitting device and improving its performance.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a light-emitting device and its fabrication method. Background Technology

[0002] In recent years, with the in-depth research on the performance of quantum dot light-emitting diode devices, great progress has been made in terms of current efficiency and lifetime. Current efficiency is proportional to external quantum efficiency (EQE). However, leakage current often occurs in the structure of quantum dot light-emitting diode devices. Therefore, there is an urgent need for a structure that can solve the leakage current problem of the device. Summary of the Invention

[0003] This application provides a light-emitting device and its fabrication method to solve the leakage current problem in light-emitting devices.

[0004] This application provides a light-emitting device, including:

[0005] First electrode;

[0006] A first functional layer is disposed on a first electrode;

[0007] A patterned insulating layer is disposed on the first functional layer, and the patterned insulating layer is at least partially exposed above the first functional layer;

[0008] A patterned second electrode is disposed on the patterned insulating layer, and the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer disposed corresponding to the patterned second electrode on the first functional layer.

[0009] A patterned second functional layer, the patterned second functional layer covering the patterned second electrode; and

[0010] A light-emitting layer is disposed on the first functional layer and covers the patterned second functional layer and the first functional layer;

[0011] In this configuration, one of the first electrode and the second electrode is an anode, and the other is a cathode; one of the first functional layer and the second functional layer is an electronic functional layer, and the other is a hole functional layer, with the electronic functional layer located near the cathode and the hole functional layer located near the anode.

[0012] Optionally, in some embodiments of this application, the orthographic projection of the patterned second functional layer onto the first functional layer lies within the orthographic projection of the patterned insulating layer onto the first functional layer.

[0013] Optionally, in some embodiments of this application, the distance from the edge of the orthographic projection of the patterned second functional layer onto the first functional layer to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer onto the first functional layer is greater than 5 nanometers.

[0014] Optionally, in some embodiments of this application, the thickness of the patterned insulating layer is 30 nanometers to 100 nanometers; or,

[0015] The distance from the edge of the orthographic projection of the patterned second electrode on the first functional layer to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer is greater than 20 nanometers.

[0016] Optionally, in some embodiments of this application, the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au;

[0017] The cathode material is selected from one or a combination of several of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag;

[0018] The hole functional layer material is selected from one or a combination of several of the following: nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0019] The electronic functional layer material is selected from one or more combinations of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, C60, GaZnO and ZnMgLiO;

[0020] The light-emitting layer is a quantum dot light-emitting layer. The material of the quantum dot light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots. The single-structure quantum dots are selected from at least one of group II-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe, and CdZnSTe. One option is that the III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP; the I-III-VI compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the core layer of the core-shell quantum dot is selected from any one of the above-mentioned single-structure quantum dots; and the shell layer of the core-shell quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS.

[0021] Accordingly, this application also provides a method for fabricating a light-emitting device, comprising:

[0022] Provide the first electrode;

[0023] A first functional layer is formed on the first electrode;

[0024] A patterned insulating layer is formed on the first functional layer, wherein the patterned insulating layer at least partially exposes the electron transport layer;

[0025] A patterned second electrode is formed on the patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer corresponding to the patterned second electrode;

[0026] A patterned second functional layer is formed on the patterned second electrode; and

[0027] A light-emitting layer is provided on the first functional layer and the patterned second functional layer;

[0028] In this configuration, one of the first electrode and the second electrode is an anode, and the other is a cathode; one of the first functional layer and the second functional layer is an electronic functional layer, and the other is a hole functional layer, with the electronic functional layer located near the cathode and the hole functional layer located near the anode.

[0029] Optionally, in some embodiments of this application, forming a patterned insulating layer on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer, and the via corresponds to the patterned insulating layer, includes:

[0030] A first photoresist layer with a plurality of through holes is formed on the first functional layer, and each pair of adjacent first photoresist layers are spaced apart.

[0031] A patterned insulating layer is formed on the first functional layer, and the via penetrates the first photoresist layer to expose a portion of the first functional layer.

[0032] Remove the first photoresist layer;

[0033] The step of forming a patterned second electrode on the patterned insulating layer includes:

[0034] A second photoresist layer having a plurality of vias is formed on the first functional layer and the patterned insulating layer, the vias corresponding to the patterned insulating layer and penetrating the second photoresist layer to expose a portion of the patterned insulating layer;

[0035] A patterned second electrode is formed in the via, wherein the orthographic projection of the patterned second electrode on the first functional layer lies within the orthographic projection of the patterned insulating layer on the first functional layer.

[0036] Optionally, in some embodiments of this application, the step of forming a patterned second functional layer on the patterned second electrode includes:

[0037] Remove the second photoresist layer;

[0038] The patterned second electrode is subjected to an oxidation treatment to form a patterned second functional layer on the surface of the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer.

[0039] Optionally, in some embodiments of this application, the material of the patterned second electrode includes a conductive material, and the material of the patterned second functional layer includes an oxide of the conductive material; or,

[0040] The patterned second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or a combination of Ni and Cu, and the material of the hole functional layer is selected from one or a combination of nickel oxide and copper oxide; or...

[0041] The patterned second electrode is a cathode, the patterned second functional layer is an electronic functional layer, the cathode material is selected from one or a combination of two of Ti, Zn and Sn, and the electronic functional layer material is selected from one or a combination of two of TiO2, ZnO and SnO2.

[0042] Optionally, in some embodiments of this application, the step of forming a patterned second functional layer on the patterned second electrode includes:

[0043] A patterned second functional layer is formed by depositing material on the patterned insulating layer and the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer;

[0044] Remove the second photoresist layer.

[0045] Optionally, in some embodiments of this application, the patterned second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al, and Au, and the hole functional layer material is selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9 One or more combinations of 9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB); or,

[0046] The patterned second electrode is a cathode, and the patterned second functional layer is an electronic functional layer. The cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag. The electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, and C. 60 One or a combination of GaZnO and ZnMgLiO.

[0047] This application discloses a light-emitting device and its fabrication method. The light-emitting device includes a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer. The first functional layer is disposed on the first electrode, the patterned insulating layer is disposed on the first functional layer, the patterned second electrode is disposed on the patterned insulating layer, and the patterned second functional layer covers the patterned second electrode. The orthographic projection of the patterned second electrode on the first functional layer lies within the orthographic projection of the patterned insulating layer on the first functional layer. The light-emitting layer covers both the patterned second functional layer and the first functional layer. One of the first electrode and the second electrode is an anode, and the other is a cathode. One of the first functional layer and the second functional layer is an electron functional layer, and the other is a hole functional layer. The electron functional layer is closer to the cathode, and the hole functional layer is closer to the anode. In this application, the orthographic projection of the patterned second electrode on the first functional layer is positioned within the orthographic projection of the patterned insulating layer on the first functional layer, avoiding contact between the patterned second functional layer and the first functional layer, thereby preventing leakage current problems in the light-emitting device and improving its performance. Attached Figure Description

[0048] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0049] Figure 1 This is a schematic diagram of the first structure of the light-emitting device provided in the embodiments of this application.

[0050] Figure 2 This is a schematic diagram of the second structure of the light-emitting device provided in the embodiments of this application.

[0051] Figure 3 This is a flowchart of the fabrication method of the light-emitting device provided in the embodiments of this application.

[0052] Figure 4 This is a schematic diagram of the structure of a light-emitting device in the prior art.

[0053] Figure 5 This is a schematic diagram of leakage current data of the light-emitting device provided in Embodiment 1 of this application.

[0054] Figure 6 This is a schematic diagram of the brightness-time of the light-emitting device provided in the embodiments of this application.

[0055] Figure 7 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 2 and Comparative Example 1 of this application.

[0056] Figure 8 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 2 and Comparative Example 1 of this application.

[0057] Figure 9 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 3 and Comparative Example 1 of this application.

[0058] Figure 10 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 3 and Comparative Example 1 of this application.

[0059] Figure 11 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 4 and Comparative Example 2 of this application.

[0060] Figure 12 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 4 and Comparative Example 2 of this application. Detailed Implementation

[0061] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0062] This application provides a light-emitting device and a method for fabricating the same. Detailed descriptions are provided below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.

[0063] This application provides a light-emitting device, including a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer. The first functional layer is disposed on the first electrode, and the patterned insulating layer is disposed on the first functional layer, with at least a portion of the patterned insulating layer exposed above the first functional layer. The patterned second electrode is disposed on the patterned insulating layer, and the orthographic projection of the patterned second electrode onto the first functional layer lies within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode onto the first functional layer. The patterned second functional layer covers the patterned second electrode. The light-emitting layer is disposed on the first functional layer and covers both the patterned second functional layer and the first functional layer. One of the first electrode and the second electrode is an anode, and the other is a cathode. One of the first functional layer and the second functional layer is an electron functional layer, and the other is a hole functional layer, with the electron functional layer closer to the cathode and the hole functional layer closer to the anode.

[0064] In this application, when the light-emitting device is an inverted light-emitting device, the first electrode is a first cathode, the first functional layer is a first electronic functional layer, the second functional layer is a hole functional layer, and the second electrode is an anode. When the light-emitting device is a normally positioned light-emitting device, the first electrode is a first anode, the first functional layer is a first hole functional layer, the second functional layer is an electronic functional layer, and the second electrode is a cathode.

[0065] The hole functional layer may include at least one of a hole transport layer and a hole injection layer. The electron functional layer may include at least one of an electron transport layer and an electron injection layer.

[0066] In this application, the orthographic projection of the patterned second electrode on the first functional layer is set to lie within the orthographic projection of the patterned insulating layer on the first functional layer, thereby avoiding contact between the patterned second functional layer and the first functional layer, thus preventing leakage problems in the light-emitting device and improving the performance of the light-emitting device.

[0067] The following is a detailed explanation:

[0068] Please see Figure 1 , Figure 1 This is a schematic diagram of the first structure of the light-emitting device provided in the embodiments of this application. This application provides a light-emitting device 10. The light-emitting device 10 includes a first functional layer 100, a patterned insulating layer 200, a patterned second electrode 300, a patterned second functional layer 400, a light-emitting layer 500, and a first electrode 600. A detailed description follows.

[0069] The first electrode 600 is either the first cathode or the first anode. The thickness H of the first electrode 600 is greater than 100 nanometers. Specifically, the thickness H of the first electrode 600 can be 100 nanometers, 110 nanometers, 250 nanometers, 700 nanometers, or 900 nanometers, etc.

[0070] In this application, the thickness H of the first electrode 600 is set to be greater than 100 nanometers, which can improve the conductivity of the first electrode 600.

[0071] In one embodiment, the first electrode 600 is a first cathode. The first cathode material is a cathode material. The cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag.

[0072] In another embodiment, the first electrode is a first anode. The first anode material is an anode material selected from one or more combinations of Pt, Ni, Cu, Ag, Al, and Au.

[0073] The first functional layer 100 is disposed on the first electrode 600. The thickness h of the first functional layer 100 is 20 nanometers to 60 nanometers. For example, the thickness h of the first functional layer 100 can be 20 nanometers, 24 nanometers, 34 nanometers, 38 nanometers, 40 nanometers, 50 nanometers, 54 nanometers or 60 nanometers, etc.

[0074] In this application, the thickness h of the first functional layer 100 is set to 20 nanometers-60 nanometers to ensure the carrier transport performance and / or carrier injection performance of the first functional layer 100, thereby ensuring the normal display of the light-emitting device 10.

[0075] It should be noted that charge carriers include electrons and holes.

[0076] In one embodiment, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is disposed on the first cathode. The first electronic functional layer includes at least one of a first electron transport layer and a first electron injection layer. The material of the first electronic functional layer is an electronic functional layer material. The electronic functional layer material is nanoparticles with a particle size of 5 nm to 20 nm, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, doped graphene, undoped graphene, and C. 60 One or a combination of GaZnO and ZnMgLiO.

[0077] In one embodiment, the first functional layer 100 is a first electronic functional layer, the first electrode 600 is a first cathode, the material of the first electronic functional layer is an electronic functional layer material, and the electronic functional layer material is an inorganic metal compound selected from one or more combinations of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO and ZnMgLiO.

[0078] In this application, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is formed using an inorganic metal compound to avoid damage during the subsequent formation of other film layers. If an organic compound is used to form the first electronic functional layer, a photoresist layer is required during the formation of subsequent film layers. When removing the photoresist layer, a portion of the first electronic functional layer is also removed, causing damage to the first electronic functional layer and affecting the performance of the light-emitting device 10.

[0079] In another embodiment, the first functional layer 100 is a first hole functional layer, and the first electrode 600 is a first anode. The first hole functional layer is disposed on the first anode. The first hole functional layer includes at least one of a first hole transport layer and a first hole injection layer. The material of the first hole functional layer is a hole functional layer material. The hole functional layer material is nanoparticles with a particle size of 5 nm to 20 nm. The hole functional layer material is selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenebisphenol A), and poly(N,N'-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenebisphenol A). It is one or a combination of several of the following: amine (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0080] A patterned insulating layer 200 is disposed on the first functional layer 100. The patterned insulating layer 200 is divided into multiple patterned insulating layer segments and a patterned insulating layer connecting segment connecting the multiple patterned insulating layer segments. Each pair of adjacent patterned insulating layer segments is spaced apart, meaning the shape of the patterned insulating layer 200 resembles the shape of an interdigitated finger structure. The patterned insulating layer 200 exposes a portion of the first functional layer 100. The material of the patterned insulating layer 200 includes one or a combination of alumina, silicon oxide, and silicon oxynitride.

[0081] It should be noted that interdigitated structures refer to multiple fingers and a palm connected to one or more fingers.

[0082] In one embodiment, the thickness D of the patterned insulating layer 200 is 30 nanometers to 100 nanometers. Specifically, the thickness D of the patterned insulating layer 200 can be 30 nanometers, 34 nanometers, 44 nanometers, 58 nanometers, 70 nanometers, 80 nanometers, 94 nanometers, or 100 nanometers, etc.

[0083] In this application, the thickness D of the patterned insulating layer 200 is set to 30 nanometers-100 nanometers to avoid the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10 and ensuring normal display of the light-emitting device 10.

[0084] A patterned second electrode 300 is disposed on a patterned insulating layer 200. The orthographic projection of the patterned second electrode 300 on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100. Specifically, the patterned second electrode 300 is divided into multiple patterned second electrode 300 segments and a patterned second electrode 300 connection segment connected to the multiple patterned second electrode 300 segments. That is, the planar shape of the patterned second electrode 300 is similar to that of an interpolated electrode. The patterned second electrode connection segment is used to connect to an external circuit. Each patterned second electrode 300 segment is correspondingly provided with a patterned insulating layer 200 segment, and each patterned second electrode 300 connection segment is correspondingly provided with a patterned insulating layer 200 connection segment. The orthographic projection of each patterned second electrode 300 segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second electrode 300 segment on the first functional layer 100. The orthographic projection of each patterned second electrode 300 connection segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 connection segment corresponding to the patterned second electrode 300 connection segment on the first functional layer 100.

[0085] In one embodiment, the thickness d of the patterned second electrode 300 is 50 nanometers to 100 nanometers. Specifically, the thickness d of the patterned second electrode 300 can be 50 nanometers, 60 nanometers, 75 nanometers, 90 nanometers, or 100 nanometers, etc.

[0086] In this application, the thickness d of the patterned second electrode 300 is set to 50 nm-100 nm. Within this range, the resistance of the patterned second electrode 300 is low, resulting in minimal current obstruction and thus improved conductivity. If the thickness d is set to less than 50 nm, the resistance of the patterned second electrode 300 becomes too high, leading to poor conductivity of the light-emitting device 10. Conversely, if the thickness d is set to greater than 100 nm, the resistance of the patterned second electrode 300 becomes too low, potentially causing damage to the light-emitting device 10.

[0087] It should be noted that the corresponding setting means that one film structure is above or below another film structure, such as the thumb structure of the patterned second electrode 300 being located above the thumb structure of the patterned insulating layer 200.

[0088] In this application, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100, so as to avoid the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10 and ensuring normal display of the light-emitting device 10.

[0089] In one embodiment, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 can be greater than 20 nanometers, 30 nanometers, 60 nanometers, 80 nanometers, 90 nanometers, or 105 nanometers, etc.

[0090] In this application, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is set to be greater than 20 nanometers. This further avoids the subsequent contact between the second functional layer 400 and the first functional layer 100, further avoids leakage current problems in the light-emitting device 10, and further ensures the normal display of the light-emitting device 10.

[0091] In one embodiment, the first electrode 600 is the first cathode, the first functional layer 100 is the first electronic functional layer, and the patterned second electrode 300 is the second anode, that is, the patterned second electrode 300 is the patterned second anode, and the patterned second anode material is the anode material, which is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au.

[0092] The electrical conductivity of Ag is 6.3 x 10⁻⁶. 7 S / m, the conductivity of Al is 3.77 x 10⁻⁶. 7 The conductivity of Au is 4.42 x 10⁻⁶ S / m. 7 S / m, Ni has a conductivity of 1.4 × 10⁻⁶. 7 If Ag, Al, and Au are used to form a patterned second anode, the performance of the light-emitting device 10 can be improved because the conductivity of Ag, Al, and Au is greater than that of Ni and Cu.

[0093] In another embodiment, the first electrode 600 is the first anode, the first functional layer 100 is the first hole functional layer, and the patterned second electrode 300 is the second cathode, that is, the patterned second electrode 300 is the patterned second cathode, and the patterned second cathode material is the cathode material, which is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag.

[0094] A patterned second functional layer 400 is disposed on the patterned second electrode 300 and the patterned insulating layer 200; the patterned second functional layer 400 is divided into multiple patterned second functional layer segments and a patterned second functional layer connecting segment connected to the multiple patterned second functional layer segments, that is, the planar shape of the patterned second functional layer is the shape of an interdigitated structure.

[0095] In one embodiment, the thickness E of the patterned second functional layer 400 is 15 nanometers to 100 nanometers. Specifically, the thickness E of the patterned second functional layer 400 can be 15 nanometers, 40 nanometers, 64 nanometers, 74 nanometers, 88 nanometers, or 100 nanometers, etc.

[0096] In this application, the thickness E of the patterned second functional layer 400 is set between 15 nanometers and 100 nanometers to ensure the transmission efficiency of holes in the patterned hole transport layer, thereby ensuring the normal display of the light-emitting device 10. In one embodiment, the orthographic projection of the patterned second functional layer 400 segment on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second functional layer 400 segment on the first functional layer 100, and the orthographic projection of the patterned second functional layer 400 connecting segment on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 connecting segment corresponding to the patterned second functional layer 400 connecting segment on the first functional layer 100, that is, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the patterned second functional layer 400... The orthographic projection of the second electrode 300 segment on the patterned insulating layer 200 segment lies within the orthographic projection of the patterned second functional layer 400 segment corresponding to the patterned second electrode 300 segment on the patterned insulating layer 200 segment. The orthographic projection of the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment lies within the orthographic projection of the patterned second functional layer 400 connecting segment corresponding to the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment. In other words, the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 lies within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200.

[0097] In this application, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is set to be within the orthographic projection of the patterned insulating layer 200 on the first functional layer 100, and the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200. This further avoids the patterned second functional layer 400 from contacting the first functional layer 100, further avoids leakage current problems in the light-emitting device 10, and thus ensures normal display of the light-emitting device 10.

[0098] In one embodiment, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 onto the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 onto the first functional layer 100 is greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 onto the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 onto the first functional layer 100 is greater than 20 nanometers to 105 nanometers. Specifically, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 onto the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 onto the first functional layer 100 can be greater than 5 nanometers, 10 nanometers, 15 nanometers, 50 nanometers, or 100 nanometers, etc., and the distance from the edge of the orthographic projection of the patterned second electrode 300 onto the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 onto the first functional layer 100 can be greater than 20 nanometers, 25 nanometers, 50 nanometers, 80 nanometers, 100 nanometers, or 105 nanometers, etc.

[0099] In this application, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 is set to be greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers, so as to avoid the patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10, and thus ensuring normal display of the light-emitting device 10.

[0100] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, and the material of the patterned second hole functional layer is a hole functional layer material.

[0101] In another embodiment, the first electrode 600 is the first anode, the first functional layer 100 is the first hole functional layer, the patterned second electrode 300 is the patterned second cathode, the patterned second functional layer 400 is the patterned second electron functional layer, the patterned second electron functional layer includes at least one of the patterned second electron transport layer and the patterned second electron injection layer, and the material of the patterned second electron functional layer is an electron functional layer material.

[0102] The light-emitting layer 500 covers the first functional layer 100 and the patterned second functional layer 400, and is in contact with both the first functional layer 100 and the second functional layer 400. The light-emitting layer 500 is also in electrical contact with the first functional layer 100 and the patterned second functional layer 400. The light-emitting layer 500 can be a quantum dot light-emitting layer. The light-emitting layer 500 includes a red quantum dot light-emitting layer, a blue quantum dot light-emitting layer, and a green light-emitting layer.

[0103] The material of the light-emitting layer 500 is a quantum dot material known in the art for use in quantum dot light-emitting layers of optoelectronic devices. The material of the light-emitting layer 500 includes at least one of single-structure quantum dots and core-shell structure quantum dots. Single-structure quantum dots include at least one of group II-VI compounds, group III-V compounds, and group I-III-VI compounds. Core-shell structure quantum dots have a core-shell structure where the shell layer covers the core layer, and the band gap of the quantum dot shell layer is larger than the band gap of the quantum dot core layer. For example, Group II-VI compounds include at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSTe; Group III-V compounds may include at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP; Group I-III-VI compounds include at least one of CuInS2, CuInSe2, and AgInS2. The core layer of the core-shell quantum dot includes at least one of the single-structure quantum dots mentioned above, and the shell layer of the core-shell quantum dot includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS. As an example, the core-shell quantum dot includes at least one of CdZnSe / CdZnS / ZnS, CdZnSe / ZnSe / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, and InP / ZnSeS / ZnS.

[0104] In this application, the material of the light-emitting layer 500 is a core-shell quantum dot material, and the band gap of the shell is larger than that of the core layer. This allows the light-emitting layer 500 to expand the range of photon collection spectrum while avoiding the influence of defects in the core layer on the light emission of the light-emitting layer 500. Since the material of the light-emitting layer 500 is a core-shell structure with a shell covering another shell, the coupling characteristics of the core layer can be avoided by adjusting the thickness of the shell, thereby improving the light emission effect of the light-emitting device 10 and improving the stability of the display of the light-emitting device 10.

[0105] In this application, other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last. This avoids damage to the light-emitting layer 500 during material deposition by other film layers. At the same time, it avoids the light-emitting layer 500 being blocked by other film layers because it is wrapped in the middle of the light-emitting device 10. This improves the display effect and performance of the light-emitting device 10.

[0106] In one embodiment, the light-emitting device 10 further includes an encapsulation structure. The encapsulation structure is disposed on the light-emitting layer 500. The encapsulation structure is formed by overlapping inorganic and organic layers. By providing an encapsulation structure on the light-emitting layer 500, the light-emitting layer 500 can be prevented from being corroded by water and oxygen, thereby improving the performance of the light-emitting device 10.

[0107] Example 1:

[0108] The light-emitting device 10 is an inverted light-emitting device, wherein the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second functional layer 400 is a patterned second hole functional layer, and the patterned second electrode 300 is a patterned second anode; the first electronic functional layer is disposed on the first cathode, the first cathode material is a cathode material, and the first electronic functional layer material is an electronic functional layer material; the patterned insulating layer 200 is disposed on the first electronic functional layer, and the patterned insulating layer 200 exposes a portion of the first electronic functional layer; the patterned second anode is disposed on the patterned insulating layer 200, and the orthographic projection of the patterned second anode on the first electronic functional layer is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second anode on the first electronic functional layer, and the patterned second anode material is an anode material. The patterned second hole functional layer is disposed on the patterned insulating layer 200 and the patterned second anode. The orthographic projection of the patterned second hole functional layer on the first electronic functional layer is located within the orthographic projection of the patterned second anode, which is disposed corresponding to the patterned second hole functional layer, on the first electronic functional layer. The orthographic projection of the patterned second anode on the patterned insulating layer 200 is located within the orthographic projection of the patterned second hole functional layer, which is disposed corresponding to the patterned second anode, on the patterned insulating layer 200. The material of the patterned second hole functional layer is a hole functional layer material. The light-emitting layer 500 is disposed on the first electronic functional layer, the patterned insulating layer 200, and the patterned second hole transport layer, and the light-emitting layer 500 is in electrical contact with the first electronic functional layer and the patterned second hole transport layer. The encapsulation structure is disposed on the light-emitting layer 500.

[0109] In this application, the orthographic projection of the patterned second anode on the first electronic functional layer is set to be located in the orthographic projection of the patterned insulating layer 200 on the first electronic functional layer. This avoids contact between the patterned second hole functional layer and the first electronic functional layer, thereby avoiding leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10. At the same time, the other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last. This avoids damage to the light-emitting layer 500 during material deposition by the other film layers. It also avoids the effect of the other film layers blocking the fluorescence of the light-emitting layer 500 because the light-emitting layer 500 is wrapped in the middle of the other film layers of the light-emitting device 10. This improves the display effect and performance of the light-emitting device 10.

[0110] Example 2:

[0111] Please continue reading. Figure 1 .

[0112] It should be noted that the difference between Example 2 and Example 1 is as follows:

[0113] The light-emitting device 10 is a positive light-emitting device, that is, the first electrode 600 is the first anode, the patterned second electrode 300 is the patterned second cathode, the first functional layer 100 is the first hole functional layer, and the patterned second functional layer is the patterned second electron functional layer.

[0114] Specifically, a first hole functional layer is disposed on a first anode, the first anode material being an anode material, and the first hole functional layer material being a hole functional layer material; a patterned insulating layer 200 is disposed on the first hole functional layer, with a portion of the first electron functional layer exposed; a patterned second cathode is disposed on the patterned insulating layer 200, the orthographic projection of the patterned second cathode on the first hole functional layer being located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second cathode on the first hole functional layer, and the patterned second cathode material being a cathode material; a patterned second electron functional layer is disposed on the patterned insulating layer 200 and the patterned second cathode, and the patterned second electron functional layer... The orthographic projection of the patterned second cathode on the first hole functional layer is located within the orthographic projection of the patterned second electron functional layer on the first hole functional layer, and the orthographic projection of the patterned second cathode on the patterned insulating layer 200 is located within the orthographic projection of the patterned second electron functional layer on the patterned insulating layer 200, the material of the patterned second electron functional layer is an electron functional layer material; the light-emitting layer 500 is disposed on the first hole functional layer, the patterned insulating layer 200 and the patterned second electron transport layer, and the light-emitting layer 500 is in electrical contact with the first hole functional layer and the patterned second electron transport layer; the encapsulation structure is disposed on the light-emitting layer 500.

[0115] In this application, the orthogonal projection of the patterned second cathode on the first hole functional layer is set to lie within the orthogonal projection of the patterned insulating layer 200 on the first hole functional layer. This avoids contact between the patterned second electron functional layer and the first hole functional layer, thereby preventing leakage current problems in the light-emitting device 10 and improving its performance. Simultaneously, the other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last. This avoids damage to the light-emitting layer 500 during material deposition by the other film layers, and also prevents the light-emitting layer 500 from being blocked by the other film layers because they are enclosed within it. This improves the display effect and performance of the light-emitting device 10. Other structures are the same as in Example 1 and will not be described again here.

[0116] Example 3:

[0117] This application also provides a second structure for the light-emitting device. It should be noted that Example 3 differs from Example 1 in that the light-emitting device further includes a third functional layer and a third electrode. The third functional layer is disposed on the light-emitting layer, and the third electrode is disposed on the third functional layer. In this application, the third functional layer can be an electronic functional layer and the third electrode can be a cathode, or the third functional layer can be a hole functional layer and the third electrode can be an anode. When the light-emitting device is a positively oriented light-emitting device, the first electrode is the first anode, the first functional layer is the first hole functional layer, the second functional layer is the second electronic functional layer, the second electrode is the second cathode, the third functional layer is the third hole functional layer, and the third electrode is the third anode. When the light-emitting device is an inverted light-emitting device, the first electrode is the first cathode, the first functional layer is the first electronic functional layer, the second functional layer is the second hole functional layer, the second electrode is the second anode, the third functional layer is the third electronic functional layer, and the third electrode is the third cathode.

[0118] One implementation method can be found in [link to implementation details]. Figure 2 , Figure 2 This is a schematic diagram of the second structure of the light-emitting device provided in the embodiments of this application.

[0119] The light-emitting device is an inverted structure, with the third functional layer 700 being the third electron functional layer and the third electrode 800 being the third cathode. The third electron transport layer 700 and the third electrode 800 are sequentially stacked on the light-emitting layer 500. Preferably, the light-emitting layer 500 is a blue quantum dot light-emitting layer. Since electrons in the blue quantum dot light-emitting device 10 are minority carriers (i.e., the number of electrons is less than the number of holes), adding the third electron functional layer and the third electrode 800 improves electron injection, balances electrons and holes, and increases the device's efficiency. Other structural details are the same as in Example 1 and will not be repeated here.

[0120] In one embodiment, the third electronic functional layer material is an electronic functional layer material, which includes inorganic metal compounds and organometallic compounds.

[0121] In one embodiment, the electronic functional layer material includes one or a combination of several of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO, and ZnMgLiO.

[0122] In one embodiment, the third cathode material is a cathode material, which includes one or more combinations of Ag, Al and Au.

[0123] In this application, a third functional layer 700 (a third electronic functional layer 700) and a third electrode 800 (a third cathode) are provided on the light-emitting layer 500. This increases the effective contact area between the electronic functional layer and the light-emitting layer 500, that is, increases the effective contact area between the first electronic functional layer and the third electronic functional layer and the light-emitting layer 500. This improves the electron transport efficiency in the light-emitting device 10, and balances the hole transport efficiency and electron transport efficiency of the light-emitting device 10. This is beneficial for balancing the charge inside the light-emitting device 10, thereby improving the performance of the device.

[0124] Example 4:

[0125] Please continue reading. Figure 2 It should be noted that Example 4 differs from Example 2 in that the light-emitting device further includes a third functional layer and a third electrode. The third functional layer is disposed on the light-emitting layer, and the third electrode is disposed on the third functional layer. In this application, the third functional layer can be an electronic functional layer and the third electrode can be a cathode, or the third functional layer can be a hole functional layer and the third electrode can be an anode. When the light-emitting device is a positively oriented light-emitting device, the first electrode is the first anode, the first functional layer is the first hole functional layer, the second functional layer is the second electronic functional layer, the second electrode is the second cathode, the third functional layer is the third hole functional layer, and the third electrode is the third anode. When the light-emitting device is an inverted light-emitting device, the first electrode is the first cathode, the first functional layer is the first electronic functional layer, the second functional layer is the second hole functional layer, the second electrode is the second anode, the third functional layer is the third electronic functional layer, and the third electrode is the third cathode.

[0126] One implementation method can be found in [link to implementation details]. Figure 2 , Figure 2 This is a schematic diagram of the second structure of the light-emitting device provided in the embodiments of this application.

[0127] The light-emitting device 10 is a positively positioned light-emitting device. The third functional layer 700 is a third hole functional layer, and the material of the third hole functional layer is a hole functional layer material. The third electrode 800 is a third anode, and the material of the third anode is an anode material. In this case, the light-emitting layer 500 is preferably a red quantum dot light-emitting layer. Since electrons are majority carriers in red quantum dot devices, that is, the number of electrons is greater than the number of holes, adding a third hole functional layer and a third anode to the third functional layer improves hole injection, balances electrons and holes, and improves the efficiency of the light-emitting device 10. Other structures are the same as in Example 2, and will not be described again here.

[0128] In this application, a third functional layer 700 (a third hole functional layer 700) and a third electrode 800 (a third anode) are provided on the light-emitting layer 500. This increases the effective contact area between the hole functional layer and the light-emitting layer 500, that is, increases the effective contact area between the first hole functional layer and the third hole functional layer and the light-emitting layer 500. This improves the hole transport efficiency in the light-emitting device 10, makes the holes and electrons in the light-emitting device 10 balanced, and thus helps to balance the charge inside the light-emitting device 10, thereby improving the performance of the device.

[0129] This application discloses a light-emitting device 10. The orthographic projection of the patterned second electrode 300 on the first functional layer 100 is positioned within the orthographic projection of the patterned insulating layer 200 on the first functional layer 100. This avoids contact between the patterned second functional layer 400 and the first functional layer 100, thereby preventing leakage current problems in the light-emitting device 10 and improving its performance. Other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last. This avoids damage to the light-emitting layer 500 during material deposition by other film layers, and also avoids the other film layers blocking the fluorescence of the light-emitting layer 500 because it is enclosed within them. This improves the display effect and performance of the light-emitting device 10. A third functional layer 700 and a third electrode 800 are disposed on the light-emitting layer 500 to increase the effective contact area between the functional layer and the light-emitting layer 500, that is, to increase the effective contact area between the first functional layer 100 and the third functional layer 700 and the light-emitting layer 500. This improves the carrier transport efficiency in the light-emitting device 10, makes holes and electrons balanced, and thus helps to balance the charge inside the light-emitting device 10, thereby improving the performance of the device.

[0130] This application also provides a method for fabricating a light-emitting device, comprising:

[0131] B11, Provide the first electrode.

[0132] B12. A first functional layer is formed on the first electrode.

[0133] B13. A patterned insulating layer is formed on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer.

[0134] B14. A patterned second electrode is formed on a patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

[0135] B15. A patterned second functional layer is formed on the patterned second electrode.

[0136] B16. Set a light-emitting layer on the first functional layer and the patterned second functional layer.

[0137] In this design, one of the first electrode and the second electrode is the anode, and the other is the cathode; one of the first functional layer and the second functional layer is the electron functional layer, and the other is the hole functional layer, with the electron functional layer closer to the cathode and the hole functional layer closer to the anode.

[0138] In this application, the orthographic projection of the patterned second electrode on the first functional layer is set to lie within the orthographic projection of the patterned insulating layer on the first functional layer, thereby avoiding contact between the patterned second functional layer and the first functional layer, thus preventing leakage problems in the light-emitting device and improving the performance of the light-emitting device.

[0139] The following is a detailed explanation:

[0140] Please see Figure 1 and Figure 3 , Figure 3 This is a flowchart illustrating the fabrication method of a light-emitting device provided in this application. A method for fabricating a light-emitting device includes:

[0141] B11, Provide the first electrode.

[0142] The first electrode 600 can be either a first cathode or a first anode. The thickness H of the first electrode 600 is greater than 100 nanometers. Specifically, the thickness H of the first electrode 600 can be 100 nanometers, 110 nanometers, 250 nanometers, 700 nanometers, or 900 nanometers, etc.

[0143] In one embodiment, the first electrode 600 is a first cathode. The first cathode material is a cathode material selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag.

[0144] In another embodiment, the first electrode is a first anode. The first anode material is an anode material selected from one or more combinations of Pt, Ni, Cu, Ag, Al, and Au.

[0145] B12. A first functional layer is formed on the first electrode.

[0146] 30 mg / mL of the first functional layer 100 nanoparticles were spin-coated onto the first electrode 600 at a spin speed of 3000 rpm for 30 seconds; then, the electrode was heated at 80 degrees Celsius for 30 minutes to form the first functional layer 100.

[0147] In one embodiment, the thickness h of the first functional layer 100 is 20 nanometers to 60 nanometers. Specifically, the thickness h of the first electron transport layer can be 20 nanometers, 24 nanometers, 34 nanometers, 38 nanometers, 40 nanometers, 50 nanometers, 54 nanometers, or 60 nanometers, etc.

[0148] In one embodiment, the first electrode 600 is a first cathode, the first functional layer is a first electronic functional layer, the first electronic functional layer includes at least one of a first electron transport layer and a first electron injection layer, and the material of the first electronic functional layer is an electronic functional layer material selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, doped graphene, undoped graphene, and C. 60 One or a combination of GaZnO and ZnMgLiO.

[0149] In another embodiment, the first electrode 600 is a first anode, the first functional layer is a first hole functional layer, the first hole functional layer includes at least one of a first hole transport layer and a first hole injection layer, and the material of the first hole functional layer is a hole functional layer material selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), cuprous thiocyanate, polyvinylcarbazole, and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-T The following are one or a combination of N,N'-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0150] B13. A patterned insulating layer is formed on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer.

[0151] A first photoresist layer with a plurality of vias is formed on the first functional layer, the vias penetrating the first photoresist layer to expose a portion of the first functional layer; then, a patterned insulating layer is formed in the vias; then, the first photoresist layer is removed.

[0152] One implementation method:

[0153] In the Huangguang cleanroom, the material of the first photoresist layer is spin-coated onto the first functional layer 100 at a spin speed of 3000 rpm for 30 seconds, and then heat-treated at 110 degrees Celsius for 2 minutes.

[0154] Then, the material of the first photoresist layer is exposed to ultraviolet light using the first photolithography mask for 5 seconds.

[0155] Then, it is placed in AZ726 developer (3:1 water) for development for 25 seconds to form a first photoresist layer with several through-holes. The first photoresist layer is an AZ1512 photoresist layer. The through-holes penetrate the first photoresist layer to expose a portion of the first functional layer 100. The through-holes are correspondingly disposed on the first functional layer 100 and are located above the first functional layer 100.

[0156] Then, at a vacuum degree of 3×10 -4 Under the condition of Pa, a patterned insulating layer material was deposited in the through-hole by electron beam evaporation at a rate of 1 angstrom / second, a time of 300 seconds, and a thickness of 30 nanometers, forming a patterned insulating layer 200.

[0157] Then, the first electrode 600, the first functional layer 100, and the patterned insulating layer 200 are immersed in acetone, and the first photoresist layer is removed by ultrasonication.

[0158] The patterned insulating layer 200 is divided into multiple patterned insulating layer segments and a patterned insulating layer connecting segment connecting the multiple patterned insulating layer segments. Each pair of adjacent patterned insulating layer segments is spaced apart, meaning the shape of the patterned insulating layer 200 resembles the shape of an interdigitated structure. The patterned insulating layer 200 exposes a portion of the first functional layer 100. The material of the patterned insulating layer 200 includes one or a combination of alumina, silicon oxide, and silicon oxynitride.

[0159] The thickness D of the patterned insulating layer 200 is 30 nanometers to 100 nanometers. Specifically, the thickness D of the patterned insulating layer 200 can be 30 nanometers, 34 nanometers, 44 nanometers, 58 nanometers, 70 nanometers, 80 nanometers, 94 nanometers, or 100 nanometers, etc.

[0160] In this application, the thickness D of the patterned insulating layer 200 is set to 30 nanometers-100 nanometers to avoid the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10 and ensuring normal display of the light-emitting device 10.

[0161] B14. A patterned second electrode is formed on the patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer corresponding to the patterned second electrode.

[0162] A second photoresist layer with a plurality of vias is formed on the first functional layer and the patterned insulating layer. The vias correspond to the patterned insulating layer and penetrate the second photoresist layer to expose a portion of the patterned insulating layer. Then, a patterned second electrode is formed in the via, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer.

[0163] One implementation method:

[0164] After drying the first electrode 600, the first functional layer 100 and the patterned insulating layer 200, the material of the second photoresist layer is spin-coated onto the first functional layer 100 and the patterned insulating layer 200 at a spin-coating speed of 3000 rpm for 30 seconds; then, it is heat-treated at 110 degrees Celsius for 2 minutes.

[0165] Then, the material of the second photoresist layer is exposed to ultraviolet light using a second photomask for 5 seconds.

[0166] Then, it is developed in AZ726 developer (3:1 to water) for 25 seconds, that is, the material of the second photoresist layer forms a second photoresist layer with a plurality of vias. The vias penetrate the second photoresist layer to expose a portion of the patterned insulating layer 200. The vias are correspondingly disposed in the second photoresist layer. The second photoresist layer is an AZ1512 photoresist layer.

[0167] Then, at a vacuum degree of 3×10 -4Under the condition of Pa, patterned second electrode 300 material is deposited in the via by electron beam evaporation at a deposition rate of 1 Å / s, a deposition time of 900 seconds, and a deposition thickness of 90 nm, forming a patterned second electrode 300. The patterned second electrode 300 is divided into multiple patterned second electrode 300 segments and a patterned second electrode 300 connecting segment connected to the multiple patterned second electrode 300 segments. That is, the planar shape of the patterned second electrode 300 is similar to that of an interdigitated electrode. The patterned second electrode connecting segment is used to connect to an external circuit. Each patterned second electrode 300 segment corresponds to a patterned insulating layer 200 segment, and each patterned second electrode 300 connecting segment corresponds to a patterned insulating layer 200 connecting segment. Each patterned second electrode 300 segment... The orthographic projection on the energy layer 100 lies within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second electrode 300 segment on the first functional layer 100. The orthographic projection of the patterned second electrode 300 connection segment on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 connection segment corresponding to the patterned second electrode 300 connection segment on the first functional layer 100. That is, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 on the first functional layer 100.

[0168] In one embodiment, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 can be greater than 20 nanometers, 30 nanometers, 60 nanometers, 80 nanometers, 90 nanometers, or 105 nanometers, etc.

[0169] In this application, the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is set to be greater than 20 nanometers. This further avoids the subsequent contact between the second functional layer 400 and the first functional layer 100, further avoids leakage current problems in the light-emitting device 10, and further ensures the normal display of the light-emitting device 10.

[0170] In one embodiment, when the patterned second electrode is a patterned second anode, the patterned second electrode 300 material is an anode material, and the anode material is selected from one or a combination of two of Ag, Al, Pt, Au, Ni and Cu.

[0171] In another embodiment, when the patterned second electrode is a patterned second cathode, the material of the patterned second electrode 300 is a cathode material, and the cathode material is selected from one or a combination of two of Ti, ITO, FTO, Fe, Al, Sn, Zn, Ag, Ni and Cu.

[0172] B15. A patterned second functional layer is formed on the patterned second electrode.

[0173] There are two methods for forming a patterned second functional layer on the patterned second electrode.

[0174] The first method is to first remove the second photoresist layer; then, oxidize the patterned second electrode to form a patterned second functional layer on the surface of the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer.

[0175] One implementation method:

[0176] The first electrode 600, the first functional layer 100, the patterned insulating layer 200, the patterned second electrode 300, and the second photoresist layer are immersed in acetone, and the second photoresist layer is removed by ultrasonication. Then, the first electrode 600, the first functional layer 100, the patterned insulating layer 200, and the patterned second electrode 300 are placed on a hot plate for heat treatment, i.e., the surface of the patterned second electrode 300 is oxidized, forming a patterned second functional layer 400 on the surface of the patterned second electrode 300. The heat treatment temperature is 300 degrees Celsius, and the heat treatment time is 30 minutes. The orthographic projection of the patterned second functional layer 400 on the first functional layer 100 lies within the orthographic projection of the patterned insulating layer on the first functional layer 100. The patterned second functional layer 400 is divided into multiple patterned second functional layer segments and a patterned second functional layer connecting segment connected to the multiple patterned second functional layer segments, i.e., the planar shape of the patterned second functional layer is the shape of an interdigitated structure.

[0177] In one embodiment, the orthographic projection of the patterned second functional layer 400 segment onto the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second functional layer 400 segment onto the first functional layer 100, and the orthographic projection of the patterned second functional layer 400 connecting segment onto the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 connecting segment corresponding to the patterned second functional layer 400 connecting segment onto the first functional layer 100. That is, the orthographic projection of the patterned second functional layer 400 onto the first functional layer 100 lies within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 onto the first functional layer 100, and the patterned second functional layer 400... The orthographic projection of the second electrode 300 segment on the patterned insulating layer 200 segment lies within the orthographic projection of the patterned second functional layer 400 segment corresponding to the patterned second electrode 300 segment on the patterned insulating layer 200 segment. The orthographic projection of the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment lies within the orthographic projection of the patterned second functional layer 400 connecting segment corresponding to the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment. In other words, the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 lies within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200.

[0178] In one embodiment, the patterned second electrode 300 is made of a conductive material, and the patterned second functional layer 400 is made of an oxide of a conductive material.

[0179] In one embodiment, when the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer is a patterned second electronic functional layer, the patterned second cathode material is a cathode material selected from one or a combination of two of Ti, Zn and Sn, the patterned second electronic functional layer material is an electronic functional layer material, and the electronic functional layer material is selected from one or a combination of two of TiO2, ZnO and SnO2.

[0180] In another embodiment, when the patterned second electrode 300 is a patterned second anode, the patterned second functional layer is a patterned second hole functional layer, and the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, the patterned second electrode 300 material is an anode material selected from one or a combination of Ni and Cu, and the patterned second hole functional layer material is a hole functional layer material selected from one or a combination of nickel oxide and copper oxide.

[0181] The second method is to first deposit a patterned second functional layer material on the patterned insulating layer and the patterned second electrode to form a patterned second functional layer, wherein the orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer; then, the second photoresist layer is removed.

[0182] One implementation method:

[0183] A patterned second functional layer is formed on the patterned second electrode 300 using electrochemical deposition or vapor deposition methods. The specific details are as follows:

[0184] A patterned second functional layer 400 is formed by electrochemical deposition: the first electrode 600, the first functional layer 100, the patterned insulating layer 200 and the patterned second electrode 300 are placed in an aqueous solution of the second functional layer material at a concentration of 0.1 mol / L. A voltage of 1.1 volts is applied to the patterned second electrode 300 with a saturated calomel electrode as a reference electrode for 120 seconds to form the patterned second functional layer 400. Then, the second photoresist layer is removed.

[0185] A patterned second functional layer is formed by vapor deposition: a second functional layer material is vapor deposited on the patterned second electrode 300 and the patterned insulating layer 200 to form a patterned second functional layer; then, the second photoresist layer is removed.

[0186] In one embodiment, when the patterned second electrode 300 is a patterned second anode and the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second anode 300 material is an anode material selected from one or more combinations of Pt, Ni, Cu, Ag, Al, and Au; the patterned second hole functional layer material is a hole functional layer material selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis( One or a combination of several of the following: (phenyl)benzidine (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0187] In another embodiment, when the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electronic functional layer, the patterned second cathode material is a cathode material selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag, and the patterned second electronic functional layer material is an electronic functional layer material selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, and C. 60 One or a combination of GaZnO and ZnMgLiO.

[0188] B16. Set a light-emitting layer on the first functional layer and the patterned second functional layer.

[0189] A 20 mg / mL light-emitting layer 500 material is spin-coated onto the patterned second electrode 300 at a spin speed of 2000 rpm for 30 seconds to form a light-emitting layer 500, which includes a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.

[0190] The luminescent layer 500 is made of quantum dot materials known in the art for use in optoelectronic devices. The material of the luminescent layer 500 includes at least one of single-structure quantum dots and core-shell quantum dots. Single-structure quantum dots include at least one of group II-VI compounds, group III-V compounds, and group I-III-VI compounds. Core-shell quantum dots have a core-shell structure where the shell layer covers the core layer, and the band gap of the quantum dot shell layer is larger than the band gap of the quantum dot core layer. For example, Group II-VI compounds include at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSTe; Group III-V compounds may include at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP; Group I-III-VI compounds include at least one of CuInS2, CuInSe2, and AgInS2. The core layer of the core-shell quantum dot includes at least one of the single-structure quantum dots mentioned above, and the shell layer of the core-shell quantum dot includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS. As an example, the core-shell quantum dot includes at least one of CdZnSe / CdZnS / ZnS, CdZnSe / ZnSe / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, and InP / ZnSeS / ZnS.

[0191] In one embodiment, after step B16, the method further includes:

[0192] An encapsulation structure is formed on the patterned second electrode 300. The encapsulation structure is formed by overlapping inorganic and organic layers. By providing an encapsulation structure in the light-emitting device 10, the light-emitting layer 500 can be prevented from being corroded by water and oxygen, thereby improving the performance of the light-emitting device 10.

[0193] Then, the current, voltage, and brightness data of the light-emitting device 10 are tested to determine the electrical performance of the device;

[0194] Then, the operating life data of the light-emitting device 10 was tested using a constant current drive of 2mA to determine the operating life of the light-emitting device 10.

[0195] Example 1

[0196] The first electrode 600 is the first cathode, the first functional layer is the first electronic functional layer, the patterned second electrode 300 is the patterned second anode, and the patterned second functional layer is the patterned second hole functional layer, that is, the light-emitting device is an inverted light-emitting device.

[0197] B11, Provide the first electrode.

[0198] B12. A first functional layer is formed on the first electrode.

[0199] Specifically, ZnO nanoparticles with a concentration of 30 mg / mL and a particle size of 10 nanometers are spin-coated on the first cathode at a spin speed of 3000 rpm for 30 seconds; then, the mixture is heated at 80 degrees Celsius for 30 minutes to form a first electron transport layer with a thickness h of 10 nanometers.

[0200] B13. A patterned insulating layer is formed on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer.

[0201] Specifically, in a cleanroom, the material of the first photoresist layer is spin-coated onto the first electron transport layer at a spin speed of 3000 rpm for 30 seconds, followed by heat treatment at 110 degrees Celsius for 2 minutes. Then, the material is exposed to ultraviolet light using a first photomask for 5 seconds. Next, it is developed in AZ726 developer (3:1 water) for 25 seconds, forming the first photoresist layer with several through-holes. Finally, the process is carried out under a vacuum of 3 × 10⁻⁶. -4 Under the condition of Pa, aluminum oxide is deposited in the through hole by electron beam at a deposition rate of 1 angstrom / second, a deposition time of 300 seconds, and a deposition thickness of 30 nanometers to form a patterned insulating layer 200; then, the first cathode, the first electron transport layer and the patterned insulating layer 200 are immersed in acetone and the first photoresist layer is removed by ultrasonication.

[0202] B14. A patterned second electrode is formed on the patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer corresponding to the patterned second electrode.

[0203] Specifically, after drying the first cathode, the first electron transport layer, and the patterned insulating layer 200, the material of the second photoresist layer is spin-coated onto the first electron transport layer and the patterned insulating layer 200 at a spin speed of 3000 rpm for 30 seconds. Then, it is heat-treated at 110 degrees Celsius for 2 minutes. Next, the material of the second photoresist layer is exposed to ultraviolet light using a second photomask for 5 seconds. Then, it is developed in AZ726 developer (3:1 water) for 25 seconds, thus forming a second photoresist layer with several vias. The vias penetrate the second photoresist layer to expose a portion of the patterned insulating layer 200. The vias are correspondingly disposed on the second photoresist layer. Then, under a vacuum of 3 × 10⁻⁶, the process is repeated. -4 Under the condition of Pa, conductive material Ni is deposited in the via by electron beam at a deposition rate of 1 angstrom / second, a deposition time of 900 seconds, and a deposition thickness of 90 nanometers to form a patterned second electrode 300, which is a patterned second anode.

[0204] B15. A patterned second functional layer is formed on the patterned second electrode.

[0205] Specifically, the first cathode, the first electron transport layer, the patterned insulating layer 200, the patterned anode, and the second photoresist layer are immersed in acetone, and the second photoresist layer is removed by ultrasonication. Then, the first cathode, the first electron transport layer, the patterned insulating layer 200, and the patterned anode are placed on a hot stage for heat treatment, that is, the surface of the patterned anode is oxidized, and the conductive material Ni is oxidized to form the conductive material oxide nickel oxide. The conductive material oxide is the second hole transport layer of the patterned second hole functional layer. The heat treatment temperature is 300 degrees Celsius, and the heat treatment time is 30 minutes.

[0206] B16. Set a light-emitting layer on the first functional layer and the patterned second functional layer.

[0207] Specifically, 20 mg / mL ZnSeTe / ZnS was spin-coated onto the patterned second anode at a spin speed of 2000 rpm for 30 seconds to form a red luminescent layer.

[0208] Then, an encapsulation structure is formed on the patterned second anode. The encapsulation structure is formed by overlapping inorganic and organic layers; then, the current, voltage, and brightness data of the light-emitting device 10 are tested to determine the electrical performance of the device; then, the operating lifetime data of the light-emitting device 10 is tested using a constant current drive of 2mA to determine the operating lifetime of the light-emitting device 10.

[0209] It should be noted that, Figure 5Examples 1-1, 1-2, 1-3, and 1-4 in the document represent four measurements performed on the device. In this application, after the second photoresist layer is removed, the patterned second anode surface is oxidized to form a patterned second hole transport layer on the surface of the patterned second anode. That is, the patterned second hole transport layer is formed by oxidation, and the orthogonal projection of the formed patterned second hole transport layer on the first electron transport layer is located within the orthogonal projection of the patterned insulating layer 200 on the first electron transport layer, thus avoiding contact between the patterned second hole transport layer and the first electron transport layer, further preventing leakage current problems in the light-emitting device 10, and thereby ensuring normal display of the light-emitting device 10.

[0210] Example 2

[0211] Please continue reading. Figure 1 It should be noted that the difference between Example 2 and Example 1 is that in step B15, a patterned second hole functional layer is formed on the patterned insulating layer 200 and the patterned second anode using a second method. The patterned second anode material includes the anode material, and the patterned second hole functional layer material is a hole functional layer material selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4' The photoresist is selected from one or more of the following: 4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB). Preferably, the patterned second anode material is Ag, and the hole functional layer material is PEDOT:PSS, which means replacing Ni with Ag and nickel oxide with PEDOT:PSS in Example 1. Furthermore, the second photoresist layer is not removed after step B14, but is removed after step B15.

[0212] Specifically, after forming a patterned second anode in the via with Ag, the first cathode, the first electron transport layer, the patterned insulating layer 200, and the patterned second anode are placed in an aqueous solution of 0.1 mol / L sodium polystyrene sulfonate (PSSNa) and 0.015 mol / L 3,4-ethylenedioxythiophene (EDOT). A voltage of 1.1 volts is applied to the patterned second anode for 120 seconds using a saturated calomel electrode as a reference electrode to form a patterned second hole transport layer of the patterned second hole functional layer. Then, the second photoresist layer is removed. Other steps are the same as in Example 1 and will not be repeated here.

[0213] In this application, after forming a patterned second anode in the via, a patterned second hole transport layer 400 is formed in the via using electrochemical deposition. Finally, the second photoresist layer is removed. This avoids the numerous defects on the surface of the nickel oxide patterned second hole transport layer 400 or copper oxide patterned second hole transport layer 400 prepared by oxidizing the second anode in air by heating in air, and the difficulty in controlling the degree of oxidation, which is detrimental to hole transport, thereby improving the performance of the light-emitting device 10.

[0214] Example 3

[0215] Please continue reading. Figure 2 It should be noted that the difference between Embodiment 3 and Embodiment 1 is that, after step B16, the following is also included:

[0216] The preferred light-emitting layer 500 is a blue light-emitting layer. A third functional layer 700 is formed on the light-emitting layer 500; then, a third electrode 800 is formed on the third functional layer 700.

[0217] Specifically, the third functional layer 700 is the third electron transport layer of the third electronic functional layer, the material of the third functional layer is the electronic functional layer material, the third electrode material is the cathode material, and the third electrode 800 is the third cathode. After forming the light-emitting layer 500 on the patterned second anode, 30 mg / L ZnO nanoparticles are spin-coated onto the light-emitting layer 500 at a spin-coating speed of 3000 rpm for 30 seconds to form the third electron transport layer. Then, under a vacuum of 3 × 10⁻⁶... -4 Under the condition of Pa, Ag was deposited by electron beam evaporation at a rate of 1 Å / s for 200 seconds, resulting in a deposition thickness of 20 nm, to form the third cathode. Other steps were the same as in Example 1 and will not be repeated here.

[0218] Example 4

[0219] Please continue reading. Figure 2It should be noted that the difference between Example 4 and Example 3 is that in step B15, a patterned second hole functional layer is formed on the patterned insulating layer 200 and the patterned second anode using a second method. The patterned second anode material includes the anode material, and the patterned second hole functional layer material is a hole functional layer material selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4'-tris(carbazole-9-yl) The patterned second anode material is selected from one or more combinations of triphenylamine (TCTA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB). Preferably, the patterned second anode material is Ag, and the patterned second hole functional layer material is PEDOT:PSS. This means that in Example 3, the patterned second anode formed from Ni is replaced with a patterned second anode formed from Ag, and nickel oxide is replaced with PEDOT:PSS. Furthermore, after step B14, the second photoresist layer is not removed initially, but is removed after step B15.

[0220] Specifically, after forming a patterned second anode using Ag, the first cathode, the first electron transport layer, the patterned insulating layer 200, and the patterned second anode are placed in an aqueous solution of 0.1 mol / L sodium polystyrene sulfonate (PSSNa) and 0.015 mol / L 3,4-ethylenedioxythiophene (EDOT). A voltage of 1.1 volts is applied to the patterned second anode using a saturated calomel electrode as a reference electrode for 120 seconds to form a patterned second hole transport layer of the patterned second hole functional layer, and then the second photoresist layer is removed. Other steps are the same as in Example 3 and will not be repeated here.

[0221] Example 5

[0222] Please continue reading. Figure 1 It should be noted that the difference between Embodiment 5 and Embodiment 1 is that: the light-emitting device 10 is a positive light-emitting device, that is, the first electrode 600 is the first anode, the patterned second electrode 300 is the patterned second cathode, the first functional layer 100 is the first hole transport layer of the first hole functional layer, and the patterned second functional layer 400 is the second electron transport layer of the patterned second electron functional layer.

[0223] Example 6

[0224] Please continue reading. Figure 2 It should be noted that the difference between Embodiment 6 and Embodiment 5 is that, after step B16, the following is also included:

[0225] The preferred light-emitting layer 500 is a blue light-emitting layer. A third functional layer 700 is formed on the light-emitting layer 500; then, a third electrode 800 is formed on the third functional layer 700.

[0226] Specifically, the third functional layer 700 is the third hole transport layer of the third hole functional layer, the material of the third functional layer is the hole functional layer material, the material of the third electrode is the anode material, and the third electrode 800 is the third anode. After forming the light-emitting layer 500 on the patterned second cathode, 30 mg / L ZnO nanoparticles are spin-coated onto the light-emitting layer 500 at a spin-coating speed of 3000 rpm for 30 seconds to form the third hole transport layer. Then, under a vacuum of 3 × 10⁻⁶... -4 Under the condition of Pa, Ag was deposited by electron beam evaporation at a rate of 1 Å / s for 200 seconds, resulting in a deposition thickness of 20 nm, to form the third anode. Other steps were the same as in Example 5 and will not be repeated here.

[0227] Comparative Example 1

[0228] Please see Figure 4 , Figure 4 This is a schematic diagram of the structure of a light-emitting device in the prior art. The difference between Comparative Example 1 and Example 1 is that, after forming the patterned insulating layer 201 using the first photoresist layer in Example 1, Comparative Example 1 directly forms a patterned second anode 301 while retaining the first photoresist layer. The edge of the orthographic projection of the patterned second anode 301 onto the first electron transport layer 101 coincides with the edge of the orthographic projection of the patterned insulating layer 201 onto the first electron transport layer 101. Then, it is placed on a hot stage for heat treatment, and partial Ni oxidation forms a patterned second hole transport layer 401. The orthographic projection of the patterned second hole transport layer 401 onto the first electron transport layer 101 is larger than the orthographic projection of the patterned insulating layer 201 onto the first electron transport layer 101. Other steps are the same as in Example 1 and will not be repeated here.

[0229] Comparative Example 2

[0230] The difference between Comparative Example 2 and Example 1 is that in Comparative Example 2, an electron transport layer, a light-emitting layer, a hole transport layer, and an anode are sequentially stacked on the cathode. The other steps are the same as in Example 1, and will not be repeated here.

[0231] Please see Figures 5-6 . Figure 5 This is a schematic diagram of leakage current data of the light-emitting device provided in Embodiment 1 of this application. Figure 6 This is a schematic diagram of the brightness-time of the light-emitting device provided in the embodiments of this application.

[0232] In this application, the orthographic projection of the patterned second anode on the first electron transport layer is set to lie within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer. After four measurements, the current flow of the light-emitting device 10 in this application is stable, meaning that the light-emitting device 10 provided in this application does not exhibit leakage current problems. In the prior art, the edge of the patterned second anode 301 coincides with the edge of the patterned insulating layer 201. When Ni is heated in air to form nickel oxide, nickel oxide is easily formed on Ni and the edge of the lower patterned insulating layer 200, causing the hole transport material nickel oxide to directly contact the lower electron transport layer material, resulting in leakage current problems in the light-emitting device 10. Therefore, by setting the orthographic projection of the patterned second anode on the first electron transport layer to lie within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer, and then heating Ni to oxidize Ni to form a patterned second hole transport layer, the contact probability between the patterned second hole transport layer and the first electron transport layer is effectively reduced, avoiding leakage current problems in the light-emitting device 10 and thus improving the performance of the light-emitting device 10.

[0233] Please see Figures 6-8 . Figure 7 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 2 and Comparative Example 1 of this application. Figure 8 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 2 and Comparative Example 1 of this application.

[0234] In this application, the orthogonal projection of the patterned second anode on the first electron transport layer is set to lie within the orthogonal projection of the patterned insulating layer 200 on the first electron transport layer, and Ag is used to form the patterned second anode. The brightness of the light-emitting device 10 can reach a maximum of greater than 10. 4 The brightness of the light-emitting device 10 is 10. 4 At this time, the external quantum efficiency can reach 16%, improving the display effect of the light-emitting device 10. However, in the prior art, the edge of the patterned insulating layer 201 coincides with the edge of the patterned second anode 301, resulting in a brightness of less than 10 for the light-emitting device 10. 4 When the brightness of the light-emitting device is 10 4At that time, the external quantum efficiency can only reach a maximum of 9%. Therefore, the light-emitting device 10 of this application can effectively reduce the contact probability between the patterned second hole transport layer and the first electron transport layer, avoiding leakage current problems in the light-emitting device 10, thereby improving the performance of the light-emitting device 10. At the same time, due to the good conductivity of Ag, the hole transport efficiency can be improved, thereby improving the performance of the light-emitting device 10. In addition, the patterned second hole transport layer can be prepared by electrodeposition. The materials for preparing the patterned second hole transport layer by electrochemical deposition method have a wider range of choices. For example, if the cost budget is not high, cheaper materials can be selected, thereby reducing the cost.

[0235] Please see Figure 6 , Figure 9 and Figure 10 . Figure 9 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 3 and Comparative Example 1 of this application. Figure 10 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 3 and Comparative Example 1 of this application.

[0236] In this application, the orthogonal projection of the patterned second anode on the first electron transport layer is set as the orthogonal projection of the patterned insulating layer 200 on the first electron transport layer, and a third electron transport layer 700 and a third electrode 800 are disposed on the light-emitting layer 500, so that the brightness of the light-emitting device 10 can reach a maximum of greater than 10. 4 The brightness of the light-emitting device 10 is 10. 4 At this time, the external quantum efficiency can reach 9%, and the lifespan can be as long as 15 hours, improving the display effect of the light-emitting device 10. In contrast, the light-emitting devices provided in the prior art have a brightness of less than 10. 4 When the brightness of the light-emitting device is 10 4 At that time, the external quantum efficiency can only reach a maximum of 4%. Therefore, the light-emitting device 10 of this application can effectively reduce the contact probability between the patterned second hole transport layer and the first electron transport layer, avoid leakage current problems in the light-emitting device 10, and thus improve the performance of the light-emitting device 10. At the same time, because a third electron transport layer 700 and a third electrode 800 are provided on the light-emitting layer 500, the effective contact area between the electron transport layer and the light-emitting layer 500 is increased, the electron injection amount is increased, and the hole and electron injection in the light-emitting layer 500 are balanced, thereby improving the performance and lifespan of the light-emitting device 10.

[0237] Please see Figure 6 , Figure 11 and Figure 12 . Figure 11 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Embodiment 4 and Comparative Example 2 of this application. Figure 12 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Embodiment 4 and Comparative Example 2 of this application.

[0238] In this application, the orthogonal projection of the patterned second anode on the first electron transport layer is set to the orthogonal projection of the patterned insulating layer 200 on the first electron transport layer, and Ag is used to form the patterned second anode. The brightness of the light-emitting device 10 can reach a maximum of greater than 10. 4 The brightness of the light-emitting device 10 is 10. 4 At this time, the external quantum efficiency can reach 18%, improving the display effect of the light-emitting device 10. In contrast, in existing technologies, the light-emitting layer is sandwiched between the hole transport layer and the electron transport layer, resulting in a brightness of less than 10 ppm for the light-emitting device. 4 In the existing technology, the brightness of the light-emitting device is 10. 4 At this point, the external quantum efficiency can only reach a maximum of 3%. Therefore, the light-emitting device 10 of this application can effectively reduce the contact probability between the patterned second hole transport layer and the first electron transport layer, avoiding leakage current problems in the light-emitting device 10, thereby improving the performance of the light-emitting device 10. At the same time, due to the good conductivity of Ag, the hole transport efficiency can be improved, thus further improving the performance of the light-emitting device 10. In addition, the patterned second hole transport layer can be prepared by electrochemical deposition. The material selection for preparing the patterned second hole transport layer by electrochemical deposition method is wider. For example, if the cost budget is not high, cheaper materials can be selected, thereby reducing the cost.

[0239] This application discloses a light-emitting device 10 and its fabrication method. The orthographic projection of the patterned second electrode 300 on the first functional layer 100 is positioned within the orthographic projection of the patterned insulating layer 200 on the first functional layer 100. This avoids contact between the patterned second functional layer 400 and the first functional layer 100, thereby preventing leakage current in the light-emitting device 10 and improving its performance. Other film layers of the light-emitting device 10 are formed first, followed by the light-emitting layer 500. This avoids damage to the light-emitting layer 500 during material deposition and prevents the light-emitting layer 500 from being blocked by the other film layers, thus improving the display effect and performance of the light-emitting device 10. A third functional layer 700 and a third electrode 800 are provided on the light-emitting layer to increase the effective contact area between the electron transport layer and the light-emitting layer 500, that is, to increase the effective contact area between the first functional layer 100 and the patterned second functional layer 400 and the light-emitting layer 500, so that the holes and electrons in the light-emitting layer region are balanced, which is beneficial to balancing the charge inside the light-emitting device 10 and thus improving the performance of the device.

[0240] The above provides a detailed description of a light-emitting device and its fabrication method provided by the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A light-emitting device, characterized in that, include: First electrode; A first functional layer is disposed on a first electrode; A patterned insulating layer is disposed on the first functional layer, and the patterned insulating layer is at least partially exposed above the first functional layer; A patterned second electrode is disposed on the patterned insulating layer, and the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer disposed corresponding to the patterned second electrode on the first functional layer. A patterned second functional layer, the patterned second functional layer covering the patterned second electrode; The orthographic projection of the patterned second functional layer onto the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the second functional layer onto the first functional layer; as well as A light-emitting layer is disposed on the first functional layer and covers the patterned second functional layer and the first functional layer; In this configuration, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, with the electronic functional layer located near the cathode and the hole functional layer located near the anode.

2. The light-emitting device according to claim 1, characterized in that, The distance from the edge of the orthographic projection of the patterned second functional layer onto the first functional layer to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer onto the first functional layer is greater than 5 nanometers.

3. The light-emitting device according to claim 1, characterized in that, The thickness of the patterned insulating layer is 30 nanometers to 100 nanometers; or... The distance from the edge of the orthographic projection of the patterned second electrode on the first functional layer to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer is greater than 20 nanometers.

4. The light-emitting device according to claim 1, characterized in that, The anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au; The cathode material is selected from one or a combination of several of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag; The hole functional layer material is selected from one or a combination of several of the following: nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB). The electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, and C. 60 One or more combinations of GaZnO and ZnMgLiO; The light-emitting layer is a quantum dot light-emitting layer. The material of the quantum dot light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots. The single-structure quantum dots are selected from at least one of group II-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe, and CdZnSTe. One option is that the III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP; the I-III-VI compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the core layer of the core-shell quantum dot is selected from any one of the above-mentioned single-structure quantum dots; and the shell layer of the core-shell quantum dot is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS.

5. A method for fabricating a light-emitting device, characterized in that, include: Provide the first electrode; A first functional layer is formed on the first electrode; A patterned insulating layer is formed on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer; A patterned second electrode is formed on the patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer on the first functional layer corresponding to the patterned second electrode; A patterned second functional layer is formed on the patterned second electrode, wherein the orthographic projection of the patterned second functional layer onto the first functional layer lies within the orthographic projection of the patterned insulating layer onto the first functional layer; and A light-emitting layer is provided on the first functional layer and the patterned second functional layer; In this configuration, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, with the electronic functional layer located near the cathode and the hole functional layer located near the anode.

6. The method for fabricating a light-emitting device according to claim 5, characterized in that, The step of forming a patterned insulating layer on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer, includes: A first photoresist layer with a plurality of through holes is formed on the first functional layer, the through holes penetrating the first photoresist layer to expose a portion of the first functional layer; A patterned insulating layer is formed in the through-hole; Remove the first photoresist layer; The step of forming a patterned second electrode on the patterned insulating layer includes: A second photoresist layer having a plurality of vias is formed on the first functional layer and the patterned insulating layer, the vias corresponding to the patterned insulating layer and penetrating the second photoresist layer to expose a portion of the patterned insulating layer; A patterned second electrode is formed in the via, wherein the orthographic projection of the patterned second electrode on the first functional layer lies within the orthographic projection of the patterned insulating layer on the first functional layer.

7. The method for preparing a light-emitting device according to claim 6, characterized in that, The step of forming a patterned second functional layer on the patterned second electrode includes: Remove the second photoresist layer; The patterned second electrode is subjected to an oxidation treatment to form a patterned second functional layer on the surface of the patterned second electrode.

8. The method for preparing a light-emitting device according to claim 7, characterized in that, The patterned second electrode is made of a conductive material, and the patterned second functional layer is made of an oxide of the conductive material; or... The patterned second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or a combination of Ni and Cu, and the hole functional layer material is selected from one or a combination of nickel oxide and copper oxide; or... The patterned second electrode is a cathode, the patterned second functional layer is an electronic functional layer, the cathode material is selected from one or a combination of two of Ti, Zn and Sn, and the electronic functional layer material is selected from one or a combination of two of TiO2, ZnO and SnO2.

9. The method for fabricating a light-emitting device according to claim 6, characterized in that, The step of forming a patterned second functional layer on the patterned second electrode includes: A patterned second functional layer is formed by depositing material of the patterned insulating layer and the patterned second electrode. Remove the second photoresist layer.

10. The method for fabricating a light-emitting device according to claim 9, characterized in that, The patterned second electrode is the anode, and the patterned second functional layer is the hole functional layer. The anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al, and Au. The hole functional layer material is selected from nickel oxide, copper oxide, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), poly(9,9-dioctylfluorene- One or more combinations of co-bis-N,N-phenyl-1,4-phenylenediamine (PFB), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB); or, The patterned second electrode is a cathode, and the patterned second functional layer is an electronic functional layer. The cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag. The electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, and C. 60 One or a combination of GaZnO and ZnMgLiO.

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