Spraying device and thin film deposition equipment

Abstract

The present invention relates to a spraying device and a thin film deposition apparatus, mainly including a first transfer pipeline, a second transfer pipeline, a diffusion unit, and an annular diffusion unit. The first and second transfer pipelines are connected to the diffusion unit, and respectively convey a first precursor and a second precursor to first and second intake pipes of the diffusion unit, so that the first and second precursors are conveyed to the lower part of the diffusion unit. The annular diffusion unit is arranged around the diffusion unit and includes a first annular transfer pipeline and a plurality of third intake pipes, wherein the third intake pipes face the lower part of the diffusion unit and are used for conveying the second precursor to the lower part of the diffusion unit.

Description

Technical Field

[0001] The present invention relates to a spraying device and a thin film deposition apparatus, which can be used to output two precursors with uniform distribution and similar concentrations below the spraying device. Background Art

[0002] With the continuous advancement of integrated circuit technology, electronic products are currently trending towards being thinner, smaller, higher-performance, more reliable, and more intelligent. Transistor miniaturization is crucial in electronic products. As transistor size shrinks, current transmission time and energy consumption are reduced, enabling faster computing and energy conservation. In today's miniaturized transistors, some critical thin films are only a few atoms thick, and atomic layer deposition (ALD) is one of the key technologies for developing these microstructures.

[0003] Atomic layer deposition (ALD) is a process that deposits a substance layer by layer onto a substrate in the form of single atoms. The main reactants in ALD are two chemical substances, commonly referred to as precursors, which are delivered sequentially into the reaction chamber.

[0004] Specifically, a first precursor is first introduced into the reaction space, where it is directed onto the substrate surface. The chemical adsorption process automatically terminates when the surface is saturated. A clean gas is then introduced into the reaction space, and the gas within the reaction space is evacuated to remove any remaining first precursor. A second precursor is then injected into the reaction space, where it reacts with the chemically adsorbed first precursor on the substrate surface to form the desired thin film. This reaction continues until the reaction of the first precursor adsorbed on the substrate surface is complete. Clean gas is then injected into the reaction space again to remove any remaining second precursor. By repeating these steps, a thin film can be formed on the substrate.

[0005] In actual applications, the uniform distribution of precursors within the reaction space and the temperature of the substrate will have a significant impact on the uniformity of the ALD film. Therefore, major process equipment manufacturers are doing their utmost to improve the spraying device to enhance the quality of the ALD process. Summary of the Invention

[0006] As previously described, conventional spraying devices often fail to evenly distribute precursors on a substrate, thus affecting the quality of the thin film deposited on the substrate surface. Therefore, the present invention proposes a novel spraying device and a thin film deposition apparatus utilizing the spraying device, which can evenly distribute precursors above a substrate and / or a carrier plate, thereby facilitating the formation of a thin film of uniform thickness on the substrate surface.

[0007] An object of the present invention is to provide a spraying device including a diffusion unit and an annular diffusion unit, wherein the annular diffusion unit is disposed around the diffusion unit. The diffusion unit includes a plurality of first inlet pipes and a plurality of second inlet pipes, and the first precursor and the second precursor are respectively delivered to the lower part of the diffusion unit via the first and second inlet pipes.

[0008] The annular diffusion unit includes a first annular delivery pipeline and a plurality of third inlet pipes, wherein the first annular delivery pipeline is connected to the third inlet pipes, and the second precursor is delivered to the lower part of the diffusion unit via the third inlet pipes to increase the total amount or concentration of the second precursor below the diffusion unit. In addition, the third inlet pipes can be inclined relative to the bottom surface of the diffusion unit to facilitate the delivery of the second precursor to the lower part of the diffusion unit.

[0009] In addition, a second annular delivery pipeline and a plurality of fourth inlet pipes can be further provided on the annular diffusion unit, wherein the second annular delivery pipeline is located radially outside the first annular delivery pipeline and is fluidly connected to the fourth inlet pipes. The second annular delivery pipeline can deliver a non-reactive gas to the periphery of the diffusion unit via the fourth inlet pipes to form a gas wall around the lower part of the diffusion unit, and limit the flow or diffusion range of the first and second precursors through the gas wall.

[0010] The diffusion unit of the spraying device includes a stack of a first diffusion plate, a second diffusion plate, and a third diffusion plate, wherein the second diffusion plate is located between the first and third diffusion plates. The first inlet pipe penetrates through the first, second, and third diffusion plates, and the second inlet pipe penetrates through the third diffusion plate and is connected to at least one diffusion space on the second diffusion plate. In addition, at least one cooling fluid channel can be further provided on the first and second diffusion plates to reduce the temperature of the diffusion unit.

[0011] An object of the present invention is to provide a thin film deposition apparatus mainly including a chamber, a spraying device, and a carrier plate, wherein the carrier plate is located in an accommodation space of the chamber, and the spraying device is fluidly connected to the accommodation space of the chamber. The carrier plate includes a carrying surface for carrying at least one wafer, the spraying device faces the carrier plate, and is used to deliver the first and second precursors to the reaction space above the wafer.

[0012] The spraying device includes a diffusion unit and an annular diffusion unit, wherein the diffusion unit outputs the first precursor at a rate greater than the second precursor. The annular diffusion unit is disposed around the diffusion unit, wherein the third inlet pipes of the annular diffusion unit face the carrying surface and are used to deliver the second precursor to the upper part of the carrier plate and the wafer to increase the concentration of the second precursor above the carrier plate and the wafer, and facilitate the formation of a thin film with uniform thickness on the surface of the wafer.

[0013] To achieve the above object, the present invention provides a spraying device, comprising: at least one first delivery pipeline for delivering a first precursor; at least one second delivery pipeline for delivering a second precursor; a diffusion unit including a plurality of first intake pipes and a plurality of second intake pipes, wherein the plurality of first intake pipes are fluidly connected to the first delivery pipeline and are used to deliver the first precursor to the lower part of the diffusion unit, and the plurality of second intake pipes are fluidly connected to the second delivery pipeline and are used to deliver the second precursor to the lower part of the diffusion unit; and an annular diffusion unit disposed around the diffusion unit and below the diffusion unit, the annular diffusion unit including at least one first annular delivery pipeline and a plurality of third intake pipes, wherein the first annular delivery pipeline is fluidly connected to the plurality of third intake pipes, and the first annular delivery pipeline delivers the second precursor to the lower part of the diffusion unit via the third intake pipes.

[0014] The present invention provides a thin film deposition apparatus, comprising: a chamber including an accommodation space; a spraying device fluidly connected to the accommodation space, the spraying device comprising: at least one first delivery pipeline for delivering a first precursor; at least one second delivery pipeline for delivering a second precursor; a diffusion unit including a plurality of first intake pipes and a plurality of second intake pipes, wherein the plurality of first intake pipes are fluidly connected to the first delivery pipeline and the accommodation space and are used to deliver the first precursor to the accommodation space, and the plurality of second intake pipes are fluidly connected to the second delivery pipeline and the accommodation space and are used to deliver the second precursor to the accommodation space; and an annular diffusion unit disposed around the diffusion unit and below the diffusion unit, the annular diffusion unit including a first annular delivery pipeline and a plurality of third intake pipes, wherein the plurality of third intake pipes are fluidly connected to the first annular delivery pipeline and the accommodation space, and the first annular delivery pipeline delivers the second precursor to the accommodation space via the third intake pipes; a carrier plate located in the accommodation space, facing the spraying device, and used to carry at least one wafer.

[0015] For the spraying device and the thin film deposition apparatus described above, the annular diffusion unit includes a second annular delivery pipeline and a plurality of fourth intake pipes, the second annular delivery pipeline is disposed around the first annular delivery pipeline, and the plurality of fourth intake pipes are fluidly connected to the second annular delivery pipeline, and the second annular delivery pipeline is used to deliver a non-reactive gas to the plurality of fourth intake pipes.

[0016] For the spraying device and the thin film deposition apparatus described above, the third intake pipes face the extending direction of the first intake pipes or the second intake pipes and are inclined with respect to the first intake pipes or the second intake pipes, and the fourth intake pipes are parallel to the first intake pipes or the second intake pipes.

[0017] For the spraying device and the thin film deposition apparatus described above, the cross-sectional area of the first delivery pipeline is larger than that of the second delivery pipeline, and the second delivery pipeline is disposed inside the first delivery pipeline.

[0018] The spraying device and the thin film deposition equipment described above, wherein the first conveying pipeline includes a first pipe portion, a second pipe portion and an extension pipeline. The first pipe portion is connected to the diffusion unit via the second pipe portion. The cross-sectional area of the second pipe portion is larger than that of the first pipe portion. The extension pipeline is arranged inside the first pipe portion and a part of the second pipe portion, and a coil is wound around the first pipe portion and the second pipe portion.

[0019] The spraying device and the thin film deposition equipment described above, wherein the diffusion unit includes: a first diffusion plate through which a first intake pipe penetrates; a second diffusion plate including at least one diffusion space, wherein the first intake pipe penetrates the second diffusion plate; at least one cooling pipeline arranged inside the first diffusion plate or the second diffusion plate; and a third diffusion plate through which the first intake pipe and a second intake pipe penetrate. The first diffusion plate, the second diffusion plate and the third diffusion plate are stacked, and the second diffusion plate is located between the first diffusion plate and the third diffusion plate. The first intake pipes on the first diffusion plate, the second diffusion plate and the third diffusion plate are connected and communicated, and the second intake pipe of the third diffusion plate is connected to the diffusion space of the second diffusion plate.

[0020] The beneficial effect of the present invention is: A spraying device and a thin film deposition equipment using the spraying device are provided, which can form a uniformly distributed precursor above the substrate and / or the carrier plate, so as to facilitate the formation of a thin film with a uniform thickness on the surface of the substrate. Description of the Drawings

[0021] Figure 1 It is a schematic cross-sectional view of an embodiment of the spraying device of the present invention.

[0022] Figure 2 It is a schematic three-dimensional cross-sectional view of an embodiment of the diffusion unit of the spraying device of the present invention.

[0023] Figure 3 It is a schematic top three-dimensional cross-sectional view of an embodiment of a diffusion plate of the diffusion unit of the present invention.

[0024] Figure 4 It is a schematic bottom three-dimensional cross-sectional view of an embodiment of a diffusion plate of the diffusion unit of the present invention.

[0025] Figure 5 It is a schematic three-dimensional cross-sectional view of another embodiment of the diffusion unit of the spraying device of the present invention.

[0026] Figure 6 It is a schematic cross-sectional view of an embodiment of the thin film deposition equipment using the spraying device of the present invention.

[0027] Figure 7 It is a schematic cross-sectional view of another embodiment of the spraying device of the present invention.

[0028] Figure 8 A schematic three-dimensional sectional view of another embodiment of the thin film deposition apparatus using the spraying device of the present invention.

[0029] Figure 9 A schematic three-dimensional sectional view of another embodiment of a diffusion plate of the diffusion unit of the present invention.

[0030] Figure 10 A sectional view of another embodiment of the spraying device of the present invention.

[0031] Figure 11 A sectional view of another embodiment of the spraying device of the present invention

[0032] Description of reference numerals: 10 - spraying device; 11 - first delivery pipeline; 111 - expansion part; 113 - diffusion plate; 1131 - perforation; 13 - second delivery pipeline; 15 - diffusion unit; 151 - first diffusion plate; 152 - first intake pipe; 153 - second diffusion plate; 1531 - annular flange; 1533 - convex part; 154 - second intake pipe; 155 - third diffusion plate; 156 - diffusion space; 157 - fourth diffusion plate; 17 - annular diffusion unit; 171 - first annular delivery pipeline; 172 - third intake pipe; 173 - second annular delivery pipeline; 174 - fourth intake pipe; 19 - coil; 20 - thin film deposition apparatus; 21 - cavity; 22 - accommodation space; 23 - carrier plate; 25 - wafer; 30 - spraying device; 31 - first delivery pipeline; 311 - first pipe section; 313 - second pipe section; 315 - extension pipeline; 3151 - air outlet; 317 - diffusion plate; 3171 - perforation; 319 - cover plate; 33 - second delivery pipeline; 35 - diffusion unit; 351 - first diffusion plate; 352 - first intake pipe; 353 - second diffusion plate; 3535 - cooling pipeline; 354 - second intake pipe; 355 - third diffusion plate; 356 - diffusion space; 39 - coil; 40 - thin film deposition apparatus. Detailed Description of the Invention

[0033] Please refer to Figure 1 , which is a sectional view of an embodiment of the spraying device of the present invention. As shown in the figure, the spraying device 10 mainly includes at least one first delivery pipeline 11, at least one second delivery pipeline 13, a diffusion unit 15 and an annular diffusion unit 17. Among them, the first delivery pipeline 11 and the second delivery pipeline 13 are fluidly connected to the diffusion unit 15, and the annular diffusion unit 17 is disposed around the diffusion unit 15.

[0034] The diffusion unit 15 includes a plurality of first intake pipes 152 and a plurality of second intake pipes 154. Among them, the first intake pipe 152 is fluidly connected to the first delivery pipeline 11, and the second intake pipe 154 is fluidly connected to the second delivery pipeline 13.

[0035] In practical applications, the first delivery pipeline 11 can be used to deliver a first precursor and / or a cleaning gas to the first intake pipe 152, and deliver the first precursor and / or the cleaning gas to the lower part of the diffusion unit 15 via the first intake pipe 152. The second delivery pipeline 13 is used to deliver a second precursor and / or a cleaning gas to the second intake pipe 154, and deliver the second precursor and / or the cleaning gas to the lower part of the diffusion unit 15 via the second intake pipe 154.

[0036] For ease of description, the first precursor described in the present invention includes a first precursor gas or a plasma of a first precursor, and the second precursor includes a second precursor gas or a plasma of a second precursor.

[0037] In an embodiment of the present invention, the diffusion unit 15 may be a structure of multiple layers, such as Figures 2 to 4 shown, and includes a first diffusion plate 151, a second diffusion plate 153, and a third diffusion plate 155. The first, second, and third diffusion plates 151 / 153 / 155 are stacked, and the second diffusion plate 153 is located between the first and third diffusion plates 151 / 155.

[0038] Partial first intake pipes 152 are respectively provided on the first, second, and third diffusion plates 151 / 153 / 155, and the first intake pipe 152 penetrates through the first, second, and third diffusion plates 151 / 153 / 155. When the first, second, and third diffusion plates 151 / 153 / 155 are stacked, the first intake pipes 152 on the first, second, and third diffusion plates 151 / 153 / 155 are aligned and connected to each other. The first intake pipe 152 penetrates through the stacked first, second, and third diffusion plates 151 / 153 / 155, so that the first precursor and / or the cleaning gas can be transmitted from the upper surface to the lower surface of the diffusion unit 15 via the first intake pipe 152.

[0039] The second diffusion plate 153 further includes at least one diffusion space 156, and the second intake pipe 154 is provided on the third diffusion plate 155, and the second intake pipe 154 penetrates through the third diffusion plate 155. Specifically, as Figure 4 shown, a circular flange 1531 and a plurality of convex portions 1533 may be provided on the lower surface of the second diffusion plate 153. The circular flange 1531 is provided around the lower surface of the second diffusion plate 153, and the convex portions 1533 are located inside the circular flange 1531. The circular flange 1531 and the convex portions 1533 are used to define the diffusion space 156 on the lower surface of the second diffusion plate 153, and the first intake pipe 152 is provided on or penetrates through the convex portions 1533.

[0040] When the second and third diffusion plates 153 / 155 are connected, the diffusion space 156 of the second diffusion plate 153 is fluidly connected to the second intake pipe 154 of the third diffusion plate 155, and the gas in the diffusion space 156 is transported to the lower part of the diffusion unit 15 via the second intake pipe 154. In another embodiment of the present invention, the convex portion 1533 and the diffusion space 156 may also be provided on the surface of the third diffusion plate 155 facing the second diffusion plate 153.

[0041] The above-mentioned diffusion unit 15 including three layers of diffusion plates is only one embodiment of the present invention and is not a limitation of the scope of the present invention. In actual application, the first diffusion plate 151 and the second diffusion plate 153 may also be integrated into a single-layer fourth diffusion plate 157, as Figure 5 shown, a plurality of first intake pipes 152 are directly provided on the fourth diffusion plate 157, and a diffusion space 156 is provided on the lower surface of the single-layer fourth diffusion plate 157, where the diffusion space 156 and the first intake pipes 152 are not fluidly connected. In addition, at least one cooling pipeline may also be provided on the fourth diffusion plate 157.

[0042] In one embodiment of the present invention, the first and second delivery pipelines 11 / 13 are pipe bodies, wherein the diameter and cross-sectional area of the second delivery pipeline 13 are larger than those of the first delivery pipeline 11, and the second delivery pipeline 13 may be disposed inside the first delivery pipeline 11.

[0043] As Figure 1 shown, a diffusion plate 113 may be provided at one end or the upper part of the first delivery pipeline 11, and the other end or the bottom includes an expansion portion 111, wherein a plurality of through holes 1131 may be provided on the diffusion plate 113, and the first precursor is transported into the first delivery pipeline 11 through the through holes 1131 of the diffusion plate 113, and the area of the expansion portion 111 gradually expands towards one end of the first delivery pipeline 11. For example, the expansion portion 111 may be trumpet-shaped or truncated cone-shaped. The first delivery pipeline 11 is connected to the diffusion unit 15 via the expansion portion 111, and the expansion portion 111 covers a plurality of first intake pipes 152 on the diffusion unit 15, so that the first delivery pipeline 11 can transport the first precursor and / or the cleaning gas to the first intake pipes 152 of the diffusion unit 15.

[0044] In one embodiment of the present invention, the cross-sectional area of the first delivery pipeline 11 is larger than that of the second delivery pipeline 13, and the rate of transporting the first precursor by the first delivery pipeline 11 is greater than the rate of transporting the second precursor by the second delivery pipeline 13.

[0045] Specifically, the second delivery pipeline 13 can pass through the diffusion plate 113, be arranged along the axial direction of the first delivery pipeline 11, and penetrate through the first diffusion plate 151, wherein the second delivery pipeline 13 is connected to the diffusion space 156 in the diffusion unit 15. In actual application, the second delivery pipeline 13 can deliver the second precursor and / or the cleaning gas to the diffusion space 156, and be delivered to the second intake pipe 154 via the diffusion space 156.

[0046] The annular diffusion unit 17 is an annular body, and the annular diffusion unit 17 is located below the diffusion unit 15. The annular diffusion unit 17 includes at least one first annular delivery pipeline 171 and a plurality of third intake pipes 172, wherein the first annular delivery pipeline 171 is fluidly connected to the third intake pipes 172, and delivers the second precursor to the lower part of the diffusion unit 15 via the third intake pipes 172. For example, the cross-section of the diffusion unit 15 can be circular, and the plurality of third intake pipes 172 of the annular diffusion unit 17 extend towards the axis or the extension line of the center of the diffusion unit 15.

[0047] The aperture diameter and / or the cross-sectional area of the second delivery pipeline 13 is smaller than that of the first delivery pipeline 11, so that the rate at which the second delivery pipeline 13 delivers the second precursor may be less than the rate at which the first delivery pipeline 11 delivers the first precursor. In addition, the second delivery pipeline 13 first delivers the second precursor to the diffusion space 156, and is delivered to the second intake pipe 154 via the diffusion space 156.

[0048] As described above, the rate at which the diffusion unit 15 delivers the second precursor to the lower part may be less than that of the first precursor, so that the concentration of the second precursor below the diffusion unit 15 may be less than that of the first precursor, or the diffusion unit 15 may take a longer time to deliver an equal amount or the same concentration of the second precursor to the lower space.

[0049] In actual application, the first precursor and the second precursor may have different viscosities or fluidities, so that the uniformity of the first precursor and the second precursor delivered to the lower part of the diffusion unit 15 is different. For example, when the viscosity of the first precursor is lower than that of the second precursor, the first precursor can be evenly distributed below the diffusion unit 15 in a shorter time. In contrast, the second precursor with a higher viscosity cannot be quickly transmitted to the edge area of the diffusion unit 15, so that the concentration of the second precursor in the edge area of the diffusion unit 15 is lower than that in the central area.

[0050] Therefore, the present invention proposes to dispose the annular diffusion unit 17 around and / or below the diffusion unit 15, and deliver the second precursor to the lower part of the diffusion unit 15 through the first annular delivery pipeline 171 and the third intake pipe 172 of the annular diffusion unit 17, so as to increase the concentration and / or uniformity of the second precursor below the diffusion unit 15, and make the concentrations of the second precursor in the edge region and the central region of the diffusion unit 15 similar.

[0051] In an embodiment of the present invention, the third intake pipe 172 of the annular diffusion unit 17 can be oriented towards the lower part of the diffusion unit 15, so as to facilitate delivering the second precursor to the lower part of the diffusion unit 15 through the third intake pipe 172. Specifically, the third intake pipe 172 can be oriented towards the extending direction of the first intake pipe 152 and / or the second intake pipe 154, and be inclined relative to the extending direction of the first intake pipe 152 and / or the second intake pipe 154 of the diffusion unit |5. For example, the included angle between the third intake pipe 172 and the first intake pipe 152 and / or the second intake pipe 154 of the diffusion unit 15 is between 0 degree and 90 degrees.

[0052] In another embodiment of the present invention, the annular diffusion unit 17 can include a second annular delivery pipeline 173 and a plurality of fourth intake pipes 174, wherein the second annular delivery pipeline 173 is disposed around, outside or radially outside the first annular delivery pipeline 171. The second annular delivery pipeline 173 is fluidly connected to the fourth intake pipes 174, and delivers a non-reactive gas to the periphery below the diffusion unit 15 through the fourth intake pipes 174, and forms an air wall around the lower part of the diffusion unit 15 to limit the flow or diffusion area of the first precursor, the second precursor and / or the cleaning gas. For example, the fourth intake pipes 174 of the annular diffusion unit 17 are approximately parallel to the first intake pipe 152 and / or the second intake pipe 154.

[0053] In an embodiment of the present invention, at least one coil 19 can be further disposed on the first delivery pipeline 11, wherein a part of the first delivery pipeline 11 and a part of the second delivery pipeline 13 are located radially inside the coil 19. In actual application, the coil 19 can be connected to an alternating current power supply or a radio frequency power supply to transmit an alternating current signal or a radio frequency signal to the coil 19, so that the first precursor gas and the second precursor gas delivered by the first and second delivery pipelines 11 / 13 become plasma.

[0054] In another embodiment of the present invention, as Figure 6 shown, it is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus applying the spraying device 10 of the present invention. The spraying device 10 described in the above embodiments of the present invention can be applied to a thin film deposition apparatus 20, such as an atomic layer deposition chamber.

[0055] The thin film deposition apparatus 20 includes a chamber 21, a spraying device 10, and a carrier plate 23, wherein the chamber 21 includes an accommodation space 22. The spraying device 10 is fluidly connected to the accommodation space 22 of the chamber 21 and transports a first precursor, a second precursor, or a cleaning gas to the accommodation space 22 of the chamber 21.

[0056] The carrier plate 23 is located in the accommodation space 22 of the chamber 21 and faces the spraying device 10. The carrier plate 23 is used to carry at least one wafer 25. The first intake pipe 152 is fluidly connected to the first delivery pipeline 11 and the accommodation space 22, such that the spraying device 10 can transport the first precursor into the accommodation space 22 via the first intake pipe 152, and the second intake pipe 154 is fluidly connected to the second delivery pipeline 13 and the accommodation space 22, such that the spraying device 10 can transport the second precursor into the accommodation space 22 via the second intake pipe 154 to deposit a thin film on the surface of the wafer 25.

[0057] The third intake pipe 172 of the annular diffusion unit 17 is fluidly connected to the first annular delivery pipeline 171 and the accommodation space 22, wherein the third intake pipe 172 faces the wafer 25 and / or the carrier plate 23, such that the first annular delivery pipeline 171 transports the second precursor into the accommodation space 22 via the third intake pipe 172.

[0058] In addition, the second annular delivery pipeline 173 of the annular diffusion unit 17 is disposed around the first annular delivery pipeline 171, and the fourth intake pipe 174 is fluidly connected to the second annular delivery pipeline 173 and the accommodation space 22. The second annular delivery pipeline 173 transports a non-reactive gas into the accommodation space 22 via the fourth intake pipe 174 and forms an air wall around the lower part and / or the periphery of the carrier plate 23 of the diffusion unit 15 to limit the flow or diffusion area of the first precursor, the second precursor, and / or the cleaning gas.

[0059] Please refer to Figure 7 , which is a schematic cross-sectional view of another embodiment of the spraying device of the present invention. As shown in the figure, the spraying device 30 mainly includes at least one first delivery pipeline 31, at least one second delivery pipeline 33, a diffusion unit 35, and an annular diffusion unit 17, wherein the first delivery pipeline 31 and the second delivery pipeline 33 are fluidly connected to the diffusion unit 35, and the annular diffusion unit 17 is disposed around the diffusion unit 35.

[0060] The spraying device 30 of the embodiment of the present invention is similar to the spraying device 10 of the previous embodiment. The main difference is that the second delivery pipeline 33 of the spraying device 30 of the present embodiment is not disposed inside the first delivery pipeline 31. The second delivery pipeline 33 is connected to the side of the diffusion unit 35 and transports the second precursor to the diffusion space 356 of the diffusion unit 35.

[0061] In addition, the first delivery pipeline 31 of the present invention may include a first pipe portion 311 and a second pipe portion 313, wherein the cross-sectional area of the first pipe portion 311 is smaller than that of the second pipe portion 313. The first pipe portion 311 is connected to the diffusion unit 35 via the second pipe portion 313, and the second pipe portion 313 covers a plurality of first intake pipes 352 on the diffusion unit 35, so that the first delivery pipeline 31 can deliver the first precursor to the first intake pipes 352 of the diffusion unit 35.

[0062] Coils 39 can be respectively arranged on the outer sides of the first pipe portion 311 and the second pipe portion 313, so that the first precursor in the first gas delivery pipeline 31 becomes plasma.

[0063] In an embodiment of the present invention, an extension pipeline 315 can be arranged in the first delivery pipeline 31, wherein the extension pipeline 315 can penetrate through the first pipe portion 311 and extend to a part of the second pipe portion 313. At least one air outlet 3151 can be arranged on the side surface or the end of the extension pipeline 315, and the first precursor is delivered to the space inside the first delivery pipeline 31 via the air outlet 3151.

[0064] The structure of the diffusion unit 35 in the embodiment of the present invention is similar to that of the diffusion unit 15 in the previous embodiment, and can be a three-layer structure similar to, for example, the stacking of the first, second, and third diffusion plates 351 / 353 / 355, or can also be a two-layer structure similar to. The main difference between the two is that the second diffusion plate 353 of the diffusion unit 35 in this embodiment includes a second delivery pipeline 33. As shown, for example, the second delivery pipeline 33 can be arranged inside the second diffusion plate 353. The second delivery pipeline 33 is fluidly connected to the diffusion space 356 of the second diffusion plate 353 and is used to deliver the second precursor or the plasma of the second precursor to the diffusion space 356. The diffusion space 356 is fluidly connected to the second intake pipe 354, so that the gas in the diffusion space 356 is delivered to the lower part of the diffusion unit 35 via the second intake pipe 354. Figure 2 such as the stacking of the first, second, and third diffusion plates 351 / 353 / 355, or can also be a two-layer structure similar to. Figure 5 The main difference between the two is that the second diffusion plate 353 of the diffusion unit 35 in this embodiment includes a second delivery pipeline 33. As shown, Figure 9 for example, the second delivery pipeline 33 can be arranged inside the second diffusion plate 353. The second delivery pipeline 33 is fluidly connected to the diffusion space 356 of the second diffusion plate 353 and is used to deliver the second precursor or the plasma of the second precursor to the diffusion space 356. The diffusion space 356 is fluidly connected to the second intake pipe 354, so that the gas in the diffusion space 356 is delivered to the lower part of the diffusion unit 35 via the second intake pipe 354.

[0065] In addition, the second diffusion plate 353 may also include at least one cooling pipeline 3535, wherein the cooling pipeline 3535 is arranged inside the first diffusion plate 351 or the second diffusion plate 353. The cooling pipeline 3535 is not connected to the second delivery pipeline 33 and the first intake pipe 352 in a continuous manner. The cooling pipeline 3535 is used to deliver a cooling fluid and is used to reduce the temperature of the diffusion unit 35. In actual application, a plurality of grooves can be arranged on the upper surface of the second diffusion plate 353, and the grooves are closed to form the second delivery pipeline 33 and the cooling pipeline 3535 inside the second diffusion plate 353.

[0066] The spraying device 30 of the present invention can also be applied to a thin film deposition device, as Figure 8As shown, the thin film deposition apparatus 40 may be an atomic layer deposition chamber, and includes a chamber 21, a spraying device 30, and a susceptor 23. The spraying device 30 is fluidly connected to the accommodation space 22 of the chamber 21, and transports the plasma of the first precursor, the second precursor, or both to the accommodation space 22 of the chamber 21.

[0067] In an embodiment of the present invention, as Figure 10 shown, the first delivery pipeline 31 is a hollow columnar body, and a diffusion plate 317 is disposed at the top of the first delivery pipeline 31. The diffusion plate 317 includes a plurality of through holes 3171, and the first precursor is transported into the first delivery pipeline 31 through the through holes 3171 of the diffusion plate 317, and then transported to the diffusion unit 15 through the first delivery pipeline 31.

[0068] In another embodiment of the present invention, as Figure 11 shown, a cover plate 319 may be disposed at the top of the first delivery pipeline 31, and an extension pipeline 315 is disposed on the cover plate 319, wherein the extension pipeline 315 passes through the cover plate 319 and is connected to the internal space of the first delivery pipeline 31. At least one air outlet 3151 may be disposed on the side surface or the end of the extension pipeline 315, and the first precursor is transported into the space inside the first delivery pipeline 31 through the air outlet 3151, and then transported to the diffusion unit 15 through the first delivery pipeline 31.

[0069] Advantages of the present invention:

[0070] A novel spraying device and a thin film deposition apparatus using the spraying device are provided, which can form a uniformly distributed precursor above the substrate and / or the susceptor, so as to facilitate the formation of a thin film with a uniform thickness on the surface of the substrate.

[0071] The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made according to the shape, structure, features and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

Claims

1. A spraying device, characterized in that, Comprising: At least one first delivery pipeline for delivering a first precursor; At least one second delivery pipeline for delivering a second precursor, the cross-sectional area of the second delivery pipeline being smaller than that of the first delivery pipeline, and the viscosity of the first precursor being lower than that of the second precursor; A diffusion unit including a plurality of first intake pipes and a plurality of second intake pipes, wherein the plurality of first intake pipes are fluidly connected to the first delivery pipeline and are used to deliver the first precursor to below the diffusion unit, and the plurality of second intake pipes are fluidly connected to the second delivery pipeline and are used to deliver the second precursor to below the diffusion unit; And An annular diffusion unit disposed around the diffusion unit and below the diffusion unit, the annular diffusion unit including at least one first annular delivery pipeline and a plurality of third intake pipes, wherein the first annular delivery pipeline is fluidly connected to the plurality of third intake pipes, and the first annular delivery pipeline delivers the second precursor to below the diffusion unit via the third intake pipes, wherein the third intake pipes face the extending direction of the first intake pipes or the second intake pipes and are inclined relative to the first intake pipes or the second intake pipes.

2. The spraying device according to claim 1, characterized in that, Wherein the annular diffusion unit includes a second annular delivery pipeline and a plurality of fourth intake pipes, the second annular delivery pipeline is disposed around the first annular delivery pipeline, and the plurality of fourth intake pipes are fluidly connected to the second annular delivery pipeline, and the second annular delivery pipeline is used to deliver a non-reactive gas to the plurality of fourth intake pipes.

3. The spraying device according to claim 2, characterized in that, The fourth intake pipes are parallel to the first intake pipes or the second intake pipes.

4. The spraying device according to claim 1, characterized in that, The second delivery pipeline is disposed inside the first delivery pipeline.

5. The spraying device according to claim 1, characterized in that, Wherein the first delivery pipeline includes a first pipe portion, a second pipe portion and an extension pipeline, the first pipe portion is connected to the diffusion unit via the second pipe portion, wherein the cross-sectional area of the second pipe portion is larger than that of the first pipe portion, and the extension pipeline is disposed in the first pipe portion and a part of the second pipe portion, and a coil is wound around the first pipe portion and the second pipe portion.

6. The spraying device according to claim 1, wherein Wherein the diffusion unit includes: A first diffusion plate through which the first intake pipes penetrate; A second diffusion plate including at least one diffusion space, wherein the first intake pipes penetrate the second diffusion plate; At least one cooling pipeline disposed inside the first diffusion plate or the second diffusion plate; and A third diffusion plate through which the first intake pipes and the second intake pipes penetrate, wherein the first diffusion plate, the second diffusion plate and the third diffusion plate are stacked, and the second diffusion plate is located between the first diffusion plate and the third diffusion plate, wherein the first intake pipes on the first diffusion plate, the second diffusion plate and the third diffusion plate are communicated, and the second intake pipes of the third diffusion plate are connected to the diffusion space of the second diffusion plate.

7. A thin film deposition device, characterized in that, Comprising: A cavity including an accommodation space; A spraying device fluidly connected to the accommodation space, including: At least one first delivery pipeline for delivering a first precursor; At least one second delivery pipeline for delivering a second precursor, the cross-sectional area of the second delivery pipeline being smaller than that of the first delivery pipeline, and the viscosity of the first precursor being lower than that of the second precursor; A diffusion unit includes a plurality of first intake pipes and a plurality of second intake pipes. The plurality of first intake pipes are fluidly connected to the first delivery pipeline and the accommodation space, and are used to deliver the first precursor to the accommodation space. The plurality of second intake pipes are fluidly connected to the second delivery pipeline and the accommodation space, and are used to deliver the second precursor to the accommodation space; and An annular diffusion unit is disposed around the diffusion unit and below the diffusion unit. The annular diffusion unit includes a first annular delivery pipeline and a plurality of third intake pipes. The plurality of third intake pipes are fluidly connected to the first annular delivery pipeline and the accommodation space. The first annular delivery pipeline delivers the second precursor to the accommodation space below the diffusion unit via the third intake pipes. The third intake pipes are oriented in the extending direction of the first intake pipes or the second intake pipes and are inclined relative to the first intake pipes or the second intake pipes; A carrier plate is located within the accommodation space, faces the spraying device, and is used to carry at least one wafer.

8. The thin film deposition apparatus according to claim 7, wherein The annular diffusion unit includes a second annular delivery pipeline and a plurality of fourth intake pipes. The second annular delivery pipeline is disposed around the first annular delivery pipeline. The plurality of fourth intake pipes are fluidly connected to the second annular delivery pipeline and the accommodation space. The second annular delivery pipeline delivers a non-reactive gas to the accommodation space via the plurality of fourth intake pipes.

9. The thin film deposition apparatus according to claim 8, wherein The fourth intake pipes are parallel to the first intake pipes or the second intake pipes.

10. The thin film deposition apparatus according to claim 7, characterized in that, The first delivery pipeline includes a first pipe section, a second pipe section, and an extension pipeline. The first pipe section is connected to the diffusion unit through the second pipe section. The cross-sectional area of the second pipe section is larger than that of the first pipe section. The extension pipeline is disposed within the first pipe section and a part of the second pipe section, and a coil is wound around the first pipe section and the second pipe section.

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