Cathode mechanism of electron gun

Abstract

The present invention provides a cathode mechanism of an electron gun and a manufacturing method of the cathode mechanism of an electron gun that can extend the life of a cathode that can obtain a desired brightness distribution. The cathode mechanism of an electron gun in one embodiment of the present invention comprises: a crystal having an upper portion and a lower portion, the upper portion being columnar, truncated cone-shaped or a combination thereof and having a first surface that emits thermal electrons by heating, the lower portion being integrally formed with the upper portion and having a second surface that is substantially parallel to the first surface and has a diameter larger than the maximum diameter of the upper portion; a holding portion formed in the shape of a cylinder having a plurality of different inner diameters of a first diameter and a second diameter larger than the first diameter from the upper surface side, holding the crystal in a state where the first surface of the crystal protrudes from the upper surface and abuts against the second surface of the crystal in the cylinder; and a suppressing portion suppressing the crystal on the back side of the lower portion of the crystal in a manner that prevents the crystal from falling off the holding portion.

Description

[0001] [Related Application]

[0002] This application claims priority based on Japanese Patent Application No. 2021-174612 (filing date: October 26, 2021). This application includes all the contents of the basic application by reference. Technical Field

[0003] One embodiment of the present invention relates to a cathode mechanism of an electron gun and a method for manufacturing the cathode mechanism of an electron gun. Background Art

[0004] The photolithography technology that is responsible for the progress of miniaturization of semiconductor devices is an extremely important process for generating unique patterns in the semiconductor manufacturing process. In recent years, with the high integration of LSI, the circuit line width required by semiconductor devices has been miniaturized year by year. Here, the electron beam (electron beam) drawing technology has excellent resolution in nature, and uses electron beams to draw mask patterns on mask blanks.

[0005] For example, there is a drawing device using multiple beams. Compared with the case of drawing with a single electron beam, by using multiple beams, more beams can be irradiated at a time, so the throughput can be greatly improved. In the drawing device of the multi-beam method, for example, the electron beam emitted from the electron gun is passed through a mask having multiple holes to form multiple beams, and blanking control is performed on each beam. The unblocked beams are reduced by the optical system, the mask image is reduced, and the beams are deflected by the deflector to irradiate the desired position on the sample.

[0006] In the cathode of the thermal electron gun that emits an electron beam, a crystal whose side is covered with a coating material to the same height as the electron emission surface is used (for example, refer to Japanese patent re-publication No. WO2007 / 055154). The crystal is consumed as it is used, and the electron emission surface retreats compared to the initial state. In the case of using a crystal whose side is covered with a coating material, if the electron emission surface retreats a specified amount compared to the end face of the coating material, the desired brightness distribution cannot be obtained, and the cathode reaches the end of its life. If the cathode reaches the end of its life, the device needs to be stopped each time, and the operating time of the device becomes shorter. On the other hand, in the case of using a crystal whose side is not covered, electrons are also emitted from the side of the crystal, and it is difficult to control the desired brightness distribution. Therefore, it is required to extend the life of the cathode that can obtain the desired brightness distribution. Summary of the invention

[0007] One embodiment of the present invention provides a cathode mechanism of an electron gun capable of extending the life of a cathode capable of obtaining a desired brightness distribution, and a method for manufacturing the cathode mechanism of an electron gun.

[0008] A cathode mechanism of an electron gun according to one embodiment of the present invention comprises:

[0009] A crystal having an upper portion and a lower portion, wherein the upper portion has a first surface that emits thermal electrons when heated and is in a columnar, truncated cone, or a combination thereof, and the lower portion is integrally formed with the upper portion and has a second surface that is substantially parallel to the first surface and has a diameter larger than the maximum diameter of the upper portion;

[0010] a holding portion formed into a cylindrical shape having a plurality of different inner diameters having a first diameter size and a second diameter size larger than the first diameter size from the upper surface side, the holding portion holding the crystal in a state where the first surface of the crystal protrudes beyond the upper surface and abuts against the second surface of the crystal in the cylinder; and

[0011] The suppression portion suppresses the crystal on the back side of the lower portion of the crystal so as to prevent the crystal from falling off the holding portion.

[0012] A method for manufacturing a cathode mechanism of an electron gun according to one embodiment of the present invention,

[0013] A crystal having an upper portion and a lower portion is inserted into the opening portion from the back side of a cylindrical holding portion having an opening, wherein the cylindrical holding portion has a plurality of openings having inner diameters different from a first diameter and a second diameter larger than the first diameter formed from the upper side, wherein the upper portion has a first surface that emits thermal electrons by heating and is columnar, truncated cone-shaped, or a combination thereof, and the lower portion is integrally formed with the upper portion and has a second surface that is substantially parallel to the first surface and has a diameter larger than the maximum diameter of the upper portion,

[0014] When the first surface protrudes from the insertion destination of the opening and the second surface of the crystal is in contact with the surface whose diameter changes from the second diameter in the opening to the first diameter, the crystal is restrained by the restraining portion on the back side of the lower part of the crystal to prevent the crystal from falling off the holding portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a cross-sectional view showing an example of the structure of a cathode mechanism of the electron gun in the first embodiment.

[0016] Figure 2 This is a plan view showing an example of the structure of a cathode mechanism of the electron gun in the first embodiment.

[0017] Figure 3 This is an enlarged cross-sectional view of an example of a crystal, an example of a holding portion, and an example of a suppressing portion in Embodiment 1.

[0018] Figure 4 This is a cross-sectional view for explaining an example of a method for manufacturing the cathode mechanism of the electron gun in the first embodiment.

[0019] Figure 5 This is a diagram showing an example of a method of fixing the suppression unit in the first embodiment.

[0020] Figure 6 This is a diagram showing another example of the method of fixing the suppression unit in the first embodiment.

[0021] Fig. 7A and Figure 7B This is a diagram for explaining the life of the cathode in a comparative example of the first embodiment.

[0022] Figure 8 This is a diagram for explaining the life of the cathode in the first embodiment.

[0023] Fig. 9 This is a diagram for explaining the relationship between the height position of the electron emission surface of the crystal and the electric field distribution in the first embodiment.

[0024] Fig. 10A This is a diagram showing the relationship among the brightness, cathode temperature, emission current, and the protrusion amount of the electron emission surface in the first embodiment.

[0025] Fig. 10B This is a diagram showing the relationship between the emission current and the protrusion amount of the electron emission surface in the first embodiment.

[0026] Fig.11 This is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppressing portion in the first embodiment.

[0027] Fig.12 This is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppressing portion in the first embodiment.

[0028] Fig.13 This is an enlarged cross-sectional view of one example of the crystal, another example of the holding portion, and one example of the suppressing portion in the first embodiment.

[0029] Fig.14 This is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppressing portion in the first embodiment.

[0030] Fig.15 This is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppressing portion in the first embodiment.

[0031] Fig.16 This is a diagram showing an example of the structure of the drawing device in the first embodiment.

[0032] Fig.17 This is a conceptual diagram showing the structure of the formed aperture array substrate in Embodiment 1.

[0033] Fig.18 It is a cross-sectional view showing the structure of the blanking aperture array mechanism in the first embodiment.

[0034] Fig.19 This is a conceptual diagram for explaining an example of the drawing operation in the first embodiment.

[0035] Fig. 20 This is a diagram showing an example of a multi-beam irradiation area and rendering target pixels in the first embodiment.

[0036] Fig.21 This is a diagram for explaining an example of a multi-beam drawing method in the first embodiment. DETAILED DESCRIPTION

[0037] Hereinafter, in the embodiments, a cathode structure and a method for manufacturing the cathode structure are provided, which are capable of extending the life of a cathode capable of obtaining a desired brightness distribution.

[0038] In the following, in the embodiments, a structure using multiple beams as electron beams is described. However, this is not limited to this, and a structure using a single beam may also be used. In the following, a drawing device is described, but any device using an electron beam emitted from a thermal electron emission source may be used, and a device other than a drawing device may also be used. For example, an image acquisition device or an inspection device may also be used.

[0039] Implementation method 1.

[0040] Figure 1 This is a cross-sectional view showing an example of the structure of a cathode mechanism of the electron gun in the first embodiment.

[0041] Figure 2 This is a plan view showing an example of the structure of a cathode mechanism of the electron gun in the first embodiment.

[0042] Figure 3 This is an enlarged cross-sectional view of an example of a crystal, an example of a holding portion, and an example of a suppressing portion in Embodiment 1.

[0043] exist Figure 1 and Figure 2 In FIG. 1 , the cathode mechanism 222 (cathode mechanism) of the electron gun includes a crystal 10 , a holding portion 12 , a suppressing portion 13 , a pair of supporting columns 14 , 16 , and a pair of base portions 18 , 19 .

[0044] The crystal 10 emits thermal electrons from the electron emitting surface 11 (first surface) serving as one end surface when heated. As the material of the crystal 10, for example, lanthanum hexaboride (LaB 6 ). The crystal orientation in the electron emitting surface 11 of the crystal 10 is the same. For example, it is preferable to have a crystal orientation of (100) or (310).

[0045] like Figure 3 As shown, the crystal 10 is composed of an upper part 70 and a lower part 80. The upper part 70 and the lower part 80 are formed as a whole. The upper part 70 is composed of a column, a truncated cone, or a combination thereof. The column, for example, includes a circular column, a quadrangular column, or a multi-sided column with more than a quadrilateral. Figure 1 to Figure 3 In the example shown, the upper portion 70 is formed to have a diameter of φ 1 The upper surface of the upper portion 70 serves as the electron emission surface 11 (first surface). The electron emission surface 11 is preferably circular.

[0046] The lower part 80 is formed of a column or a truncated cone. The column, for example, includes a circular column, a quadrangular column, or a multi-sided column with more than quadrilaterals. Similarly, the column, for example, includes a circular column, a quadrangular column, or a multi-sided column with more than quadrilaterals. Alternatively, it can be a triangular prism. Alternatively, it can be a combination of multiple columns or truncated cones with different maximum diameters. Figure 1 to Figure 3 In the example shown in FIG. 1 , the lower portion 80 is formed to have a diameter φ larger than the maximum diameter of the upper portion 70. 2 The lower portion 80 has a support surface 81 (second surface) having a diameter larger than the maximum diameter of the upper portion 70. The support surface 81 is the upper surface of the lower portion 80. The support surface 81 is formed to be substantially parallel to the electron emission surface 11.

[0047] The holding portion 12 holds the crystal 10 in a state where the electron emission surface 11 of the crystal 10 is exposed and covers at least a portion of the other surfaces of the crystal 10. As a material for the holding portion 12, one of graphite, tantalum, tungsten, and iridium can be used. Specifically, the holding portion 12 is formed into a cylindrical shape having a small diameter (first diameter) and a diameter (second diameter) larger than the small diameter from the upper surface side, and a plurality of different inner diameters, and holds the crystal 10 in a state where the electron emission surface 11 of the crystal 10 protrudes from the upper surface and abuts against the support surface 81 of the crystal 10 in the cylinder. The holding portion 12 is formed, for example, with a through diameter φ 3 The opening 42 is formed at the center of the cylindrical body. Specifically, the following opening 42 is formed.

[0048] In the holding portion 12, an opening is formed that has a size (first diameter size) of the maximum diameter size of the upper portion 70 of the crystal 10 + α from the upper surface to the mid-height position h, or an opening that has a size (second diameter size) of the maximum diameter size of the upper portion 70 of the crystal 10 + α from the mid-height position h while expanding in a conical shape from the upper surface, and a size (second diameter size) of the maximum diameter size of the lower portion 80 of the crystal 10 that is larger than the maximum diameter size of the upper portion 70 of the crystal 10 from the mid-height position h toward the back side. Figure 3 In the example of FIG. 1 , the diameter φ is shown from the upper surface to the height position h in the middle. 1The opening portion 42-1 of the size of +α is formed, and the diameter is φ from the height position h in the middle toward the back side. 2 The case where the opening portion 42-2 of the size of +α is formed as the opening portion 42. Here, α is a margin for achieving a predetermined fitting relationship. Therefore, a columnar counterbore surface 43 (cylindrical bottom) is formed at the height position h.

[0049] The suppressing portion 13 is arranged in a state of contact with the back side of the lower portion 80 of the crystal 10. The suppressing portion 13 suppresses the crystal 10 in a manner that prevents the crystal 10 from falling off the holding portion 12. The suppressing portion 13 is preferably made of the same material as the holding portion 12. As the material of the suppressing portion 13, one of graphite, tantalum, tungsten, and iridium can be used.

[0050] Figure 4 1 is a cross-sectional view for explaining an example of a method for manufacturing a cathode mechanism of an electron gun in Embodiment 1. Figure 4 As shown, first, the crystal 10 is inserted into the opening 42 from the back side of the holding portion 12. At this time, the crystal 10 is inserted in a direction in which the upper portion 70 enters the opening 42 first. Then, the support surface 81 is inserted until it abuts against the cylindrical countersunk surface 43 in the opening 42. In this way, the electron emitting surface 11 can be made to protrude by a predetermined protrusion amount d from the insertion destination of the opening 42. If there is no abutment between the support surface 81 and the cylindrical countersunk surface 43, it is difficult to adjust the protrusion amount d. In Embodiment 1, the support surface 81 is made to abut against the cylindrical countersunk surface 43, so that the crystal 10 can be arranged according to the designed size.

[0051] In this way, in a state in which the electron emission surface 11 protrudes from the insertion destination of the opening portion 42 and the contact surface 81 of the crystal 10 is in contact with the columnar countersunk hole surface 43 in which the maximum diameter dimension (second diameter dimension) of the lower portion 80 of the crystal 10 in the opening portion 42 is changed to the maximum diameter dimension (first diameter dimension) of the upper portion 70 of the crystal 10, the crystal 10 is restrained by the restraining portion 13 on the back side of the lower portion 80 of the crystal 10 in such a manner as to avoid the crystal 10 from falling off the holding portion 12.

[0052] Figure 5 FIG. 1 is a diagram showing an example of a method for fixing the suppression portion in Embodiment 1. Figure 5 In the example of FIG. 1 , the suppressing portion 13 is inserted into the opening 42 of the holding portion 12 while an adhesive 90 such as a carbon paste material is applied to the side of the suppressing portion 13. Thus, the suppressing portion 13 can be bonded to the holding portion 12. Alternatively, the adhesive 90 can be replaced by a screw, and in this case, the crystal can be suppressed by the above-mentioned structure and method.

[0053] Figure 6 FIG. 2 is a diagram showing another example of a method for fixing the suppression portion in Embodiment 1. Figure 6In the example of , at least one hole 93 is formed in advance, which passes from the outer peripheral side of the holding portion 12 to the inside of the opening portion 42. Each hole 93 is formed at a height position where the suppression portion 13 is arranged. For example, the hole 93 is formed in the horizontal direction. In addition, for example, two holes 93 may be formed with the phases shifted by 180 degrees. Alternatively, three holes 93 may be formed with the phases shifted by 120 degrees each. In a state where the suppression portion 13 is inserted into the opening portion 42 of the holding portion 12, the wedge 92 is driven into the suppression portion 13 through the hole 93. As a result, the suppression portion 13 is deformed and fixed in the holding portion 12.

[0054] Alternatively, at the height position where the suppression portion 13 is arranged, an internal thread is formed on the side surface of the suppression portion 13 at a position corresponding to the hole 93 in the direction in which the hole 93 extends. Furthermore, when the suppression portion 13 is inserted into the opening 42 of the holding portion 12, the screw 94 may be inserted through the hole 93, and then the screw 94 may be screwed into the internal thread formed on the side surface of the suppression portion 13, thereby fixing the suppression portion 13 in the holding portion 12. Figure 6 In the example of FIG. 1 , a case where the screw 94 does not have a head is shown, but the present invention is not limited to this. A general bolt with a head may also be used.

[0055] Alternatively, an internal thread is formed in the hole 93 formed in the holding portion 12. Furthermore, when the suppression portion 13 is inserted into the opening 42 of the holding portion 12, a screw 94 may be screwed into the hole 93, and the front end of the screw 94 may be brought into contact with the suppression portion 13, and further pressed. Thus, the suppression portion 13 is fixed in the holding portion 12 by friction between the side surface of the suppression portion 13 and the front end of the screw 94.

[0056] As described above, by configuring the support surface 81 to abut against the columnar counterbore surface 43 , the protrusion amount d of the electron emitting surface 11 can be controlled with high accuracy.

[0057] A pair of pillars 14 (first pillar) and a pillar 16 (second pillar) support the holding portion 12. The pair of pillars 14 and 16 extend while maintaining the same cross-sectional dimensions. The pair of pillars 14 and 16 are arranged with a gap width W between them. The pair of pillars 14 and 16 are opposed to each other with a width W that is greater than the opening diameter of the opening 42. The pair of pillars 14 and 16 function as a heater for heating the crystal 10 via the holding portion 12.

[0058] The pair of bases 18 and 19 fix the pair of pillars 14 and 16. Specifically, the base 18 fixes the lower end of the pillar 14. The base 19 fixes the lower end of the pillar 16. The base 18 is connected to and supported by the metal wiring 50 supported by the insulator 54. The base 19 is connected to and supported by the metal wiring 52 supported by the insulator 54.

[0059] The holding portion 12, the pair of pillars 14, 16, and the pair of base portions 18, 19 are formed of an integral structure of the same material. As a material for the integral structure, one of graphite, tantalum, tungsten, and iridium can be used. When the holding portion 12, the pair of pillars 14, 16, and the pair of base portions 18, 19 are formed into an integral structure, first, the base material is formed into a shape in which a cylinder stands upright in the center of the plate-like base portion. The width L of the base portion is preferably set to be equal to the diameter φ of the cylinder. 4 For example, the size is twice or more. Figure 2 In the example, a case where it is formed with a size of about 3 times is shown. Furthermore, a cutting process of width W is performed by leaving a portion corresponding to the retaining portion 12 at the central portion in the long side direction of the base portion and passing through the central portion of the cylinder, thereby separating the base portion 18 from the base portion 19, and separating the support 14 from the support 16. Thus, a series flow path can be formed in which current flows in the order of the base portion 18, the support 14, the retaining portion 12, the support 16, and the base portion 19. In addition, the above-mentioned opening portion 42 is formed in the central portion of the upper surface of the cylindrical retaining portion 12. Thus, the retaining portion 12, a pair of supports 14, 16, and a pair of base portions 18, 19 of an integral structure can be formed.

[0060] The current flowing through the electric wire 50 to the base portion 18 of width L can suppress the resistance to be small due to the large cross-sectional area, and the heat generation can be suppressed. In addition, since the resistance is large in the pillar 14 whose cross-sectional area decreases sharply relative to the base 18, the heat generation can be increased. Here, for example, if the shape is a gradually decreasing cross-sectional area, a large amount of electricity is required in order to reduce the number of portions with small resistance and obtain the necessary heat generation. In contrast, in embodiment 1, the pillar 14 extends toward the retaining portion 12 while maintaining a small cross-sectional area, so that a large resistance state can be maintained. Therefore, when the necessary heat generation is obtained, heat can be efficiently generated with a small amount of electricity. The same is true for the pillar 16.

[0061] As described above, the pair of support columns 14 and 16 are arranged from a diameter of φ 4 The cylindrical part of the 4 The cylindrical portion of the retaining portion 12 is retained, and a cut of width W is formed in the central portion, thereby cutting out two split portions. Figure 1As shown in the top view of the pair of pillars on the upper right of the figure, the portions 2, 3, 4, and 5 on both sides of the split portion are cut off respectively, forming a pair of pillars 14 and 16 with a width D of the outer side of the cross section being an arc. Thus, the pillars 14 and 16 have a cross-sectional structure with three straight sides and one curved side. By further cutting off the portions 2, 3, 4, and 5 on both sides of the split portion, the cross-sectional area of ​​the pillars 14 and 16 can be further reduced. By reducing the cross-sectional area, the resistance can be increased, and the temperature can be efficiently raised when current flows.

[0062] Fig. 7A and Figure 7B This is a diagram for explaining the life of the cathode in a comparative example of the first embodiment.

[0063] Figure 8 This is a diagram for explaining the life of the cathode in the first embodiment.

[0064] exist Fig. 7A In FIG. 1 , a case where a crystal 60 having a truncated cone-shaped upper portion is arranged on a cylindrical lower portion is shown. In the comparative example, the upper surface of the holding portion 62 is arranged at the same height as the upper surface (electron emission surface) of the crystal 60. In addition, a case where a filler 61 is arranged on the holding portion 62 along the inclined surface of the truncated cone of the crystal 60 with a gap therebetween is shown. In the comparative example, due to the consumption of the crystal 60 due to use, as shown in FIG. Figure 7B As shown in FIG. 1 , the electron emission surface recedes. If the receding amount Δ reaches a predetermined value, the desired brightness distribution cannot be obtained and the cathode reaches the end of its life. If the cathode reaches the end of its life, the device needs to be stopped every time. If the period from the start of use to the time when the receding amount Δ relative to the upper surface of the retaining portion 62 reaches a predetermined value is short, the frequency of cathode replacement increases, and the downtime of the device increases. In contrast, in Embodiment 1, as Figure 8 As shown, the electron emission surface 11 is configured to protrude from the upper surface of the holding portion 12 by a predetermined protrusion amount d. Therefore, the period from the start of use to the time when the retreat amount Δ relative to the upper surface of the holding portion 62 reaches a predetermined value can be made longer than in the comparative example. Therefore, the life of the cathode can be extended. However, in order to obtain a stable brightness or uniform brightness distribution of the beam, it is not sufficient to simply protrude the electron emission surface 11 from the upper surface of the holding portion 12. It is important to control the protrusion amount d.

[0065] Fig. 9 1 is a diagram for explaining the relationship between the height position of the electron emission surface of the crystal and the electric field distribution in Embodiment 1. Fig. 9In the figure, the height position of the electron emitting surface 11 is shown as a height position A which is the same as the upper surface of the holding portion 12, a height position B which protrudes from the upper surface of the holding portion 12, a height position C which protrudes further, and a height position D which is set back from the upper surface of the holding portion 12. Fig. 9 The graph shows the electric field distribution near the electron emission surface 11 in each state A to D. If the height position of the electron emission surface 11 is offset from the upper surface of the retaining portion 12, the electric field distribution near the electron emission surface 11 is also uneven. When the deviation of the height position of the electron emission surface 11 from the upper surface of the retaining portion 12 becomes larger, the deviation of the electric field distribution becomes larger. When the deviation of the electric field distribution becomes larger, the lens effect generated by the electric field becomes larger, the beam has diffusion, and it is difficult to control the brightness (or current density) or brightness distribution (or current density distribution) on the sample surface within the allowable range. Therefore, it is necessary to adjust the height position of the electron emission surface 11 to within the allowable range.

[0066] Fig. 10A 1 is a graph showing the relationship between the brightness, cathode temperature, emission current, and the protrusion amount of the electron emission surface in Embodiment 1. Fig. 10A In FIG. 1 , the protrusion amount of the electron emission surface is expressed as a ratio of the protrusion amount to the diameter of the electron emission surface 11. Under the condition that the cathode temperature and the emission current are constant, the brightness decreases as the protrusion amount increases.

[0067] The brightness is high when many electrons are emitted from the limited electron emission surface 11. Moreover, when it becomes a protruding structure, electron emission is generated from the outer periphery of the cylinder in addition to the electron emission surface 11. In the protruding structure, in addition to the electron emission surface 11, the area of ​​the outer peripheral surface needs to be considered. When the emission current is constant and the cathode temperature is the same, the surface area of ​​the crystal 10 with the protruding structure is larger than the surface area of ​​the crystal without the protruding structure, so the electron density obtained by dividing the emission current by the surface area becomes lower. As a result, the brightness becomes lower.

[0068] In order to maintain constant brightness, it is necessary to increase the cathode temperature and emission current. However, there is a limit to increasing the cathode temperature and emission current. Therefore, in order to maintain the desired brightness range (allowable range) in the entire beam, the protrusion amount d of the electron emission surface is limited.

[0069] Fig. 10B FIG. 2 is a diagram showing the relationship between the emission current and the protrusion amount of the electron emission surface in Embodiment 1. Fig. 10B In FIG. 1 , the vertical axis represents the emission current E. The horizontal axis represents the protrusion amount (%) of the electron emission surface. Fig. 10A and Fig. 10B In the Fig. 10BIn FIG. 1 , the change in brightness is shown, and here, the change in emission current when the current density J is maintained constant instead of the brightness. When the protrusion of the electron emission surface is increased, as shown in FIG. Fig. 10A As shown, the brightness (current density) decreases, so in order to maintain a constant brightness (current density), as shown in FIG. Fig. 10B As shown, the emission current E increases. In addition, the cathode temperature also increases. Increasing the emission current will increase the capacity of the power supply that controls the emission current, so it is not preferred. In addition, the temperature rise of the cathode will accelerate the evaporation and sublimation of the crystal, which will shorten the life. Even if the temperature rise of the cathode is allowed, the maximum value Emax of the emission current E is determined according to the guaranteed range of the high-voltage power supply. As a result, Fig. 10B As shown, the protrusion amount of the electron emitting surface that gives the maximum value Emax of the emission current E is uniquely determined, and this protrusion amount is 10% of the diameter of the electron emitting surface. Therefore, the protrusion amount d of the electron emitting surface 11 from the upper surface of the holding portion 12 is preferably less than 10% of the diameter of the electron emitting surface 11.

[0070] In Embodiment 1, the electron emitting surface 11 can be suppressed from protruding further by bringing the support surface 81 of the crystal 10 into contact with the cylindrical countersunk surface 43 of the holding portion 12. Therefore, if the distance between the electron emitting surface 11 and the support surface 81 and the distance between the upper surface of the holding portion 12 and the cylindrical countersunk surface 43 are manufactured with high accuracy, the support surface 81 is brought into contact with the cylindrical countersunk surface 43, and when manufacturing the cathode mechanism 222, the protrusion amount d of the electron emitting surface 11 can be controlled with high accuracy.

[0071] exist Figure 1 and Figure 3 In the example shown in FIG. 1 , the shape of the upper portion 70 of the crystal 10 is a columnar shape, but the present invention is not limited thereto.

[0072] Fig.11 FIG. 1 is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppression portion in Embodiment 1. Fig.11 In the example of FIG. 1 , the shape of the upper portion 70 of the crystal 10 is a truncated cone. Fig.11 In the example shown, the electron emission surface 11 has a diameter of φ 1 The lower end of the upper portion 70 has a diameter of φ 5 The upper portion 70 has a truncated cone shape that expands in a conical shape toward the lower end. In this case, the maximum diameter of the upper portion 70 is the diameter φ of the lower end of the upper portion 70. 5 The lower portion 80 is formed to have a diameter of φ 2 The maximum diameter of the upper portion 70 is φ 5 Therefore, the support surface 81 has a diameter of φ 5 With diameter φ 2 The plane between.

[0073] The retaining portion 12 has an opening 42 that expands in a conical shape from the upper surface to a mid-height position h, and at the same time becomes the maximum diameter dimension of the upper portion 70 of the crystal 10 at the mid-height position h, and becomes the maximum diameter dimension (second diameter dimension) of the lower portion 80 of the crystal 10 that is larger than the maximum diameter dimension of the upper portion 70 of the crystal 10 from the mid-height position h toward the back side. Fig.11 In the example of FIG. 1 , the following is shown: the inclined surface of the upper portion 70 extends in a conical shape from the upper surface to the midway height position h, and the diameter φ is increased at the midway height position h. 5 +α size, and from the height position h in the middle toward the back side with a diameter of φ 2 The dimension of +α forms the opening 42. Here, α is a margin for achieving a predetermined fitting relationship. Therefore, a columnar counterbore surface 43 is formed at the height position h.

[0074] Fig.12 FIG. 1 is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppression portion in Embodiment 1. Fig.12 In the example of FIG. 1 , the shape of the upper portion 70 of the crystal 10 is a combination of a columnar shape and a truncated cone shape. Fig.12 In the example of , a shape in which a cylinder is arranged on a truncated cone is shown. Fig.12 In the example, the portion of the upper portion 70 of the crystal 10 from the vicinity of the upper surface of the holding portion 12 to the electron emitting surface 11 is formed of a cylinder, and the portion from the vicinity of the upper surface of the holding portion 12 to the lower portion 80 of the crystal 10 is formed of a truncated cone. Fig.12 In the example shown in FIG. 1 , the electron emission surface 11 has a diameter of φ 1 And keep the diameter φ 1 The diameter does not change to the same size until the upper surface of the holding portion 12, and from the diameter φ 1 The upper surface height position of the holding portion 12 is oriented toward the diameter φ 5 The lower end of the upper portion 70 is in the shape of a truncated cone that expands in a conical shape. In this case, the maximum diameter of the upper portion 70 becomes the diameter φ of the lower end of the upper portion 70. 5 The lower portion 80 is formed to have a diameter of φ 2 The maximum diameter of the upper portion 70 is φ 5 Therefore, the support surface 81 has a diameter of φ 5 With diameter φ 2 The plane between.

[0075] The following opening 42 is formed on the holding portion 12: the opening 42 expands from the upper surface in a conical shape to the mid-height position h, and at the same time, the mid-height position h becomes the maximum diameter of the upper portion 70 of the crystal 10, and from the mid-height position h toward the back side, the maximum diameter of the lower portion 80 of the crystal 10 becomes larger than the maximum diameter of the upper portion 70 of the crystal 10 (the second diameter). Fig.12 In the example, the diameter of the upper surface is shown as 1 +α, from the upper surface to the mid-height position h, it expands in a conical shape along the slope of the upper portion 70, and the mid-height position h is the diameter φ 5 +α size, and from the height position h in the middle toward the back side with a diameter of φ 2 When the opening 42 is formed by a dimension of +α. Here, α is a margin for forming a predetermined fitting relationship. Therefore, a columnar counterbore surface 43 is formed at the height position h.

[0076] In the above example, a case where there is substantially no gap between the side surface of the opening 42 of the holder 12 and the side surface of the upper portion 70 of the crystal 10 is shown, but the present invention is not limited thereto.

[0077] Fig.13 FIG. 1 is an enlarged cross-sectional view of one example of a crystal, another example of a holding portion, and one example of a suppressing portion in Embodiment 1. Fig.13 In the example of FIG. 1 , a gap G is provided between the side surface of the upper portion 70 of the crystal 10 and the holding portion 12. Other structures and Figure 3 same.

[0078] Fig.14 FIG. 1 is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppression portion in Embodiment 1. Fig.14 In the example of FIG. 1 , a gap G is provided between the truncated cone slope of the upper portion 70 of the crystal 10 and the holding portion 12. Other structures and Fig.11 same.

[0079] Fig.15 FIG. 1 is an enlarged cross-sectional view of another example of the crystal, another example of the holding portion, and one example of the suppression portion in Embodiment 1. Fig.15 In the example of FIG. 1 , a gap G is provided between the truncated cone slope of the upper portion 70 of the crystal 10 and the holding portion 12. Other structures and Fig.12 same.

[0080] You can also use Figure 3 and Figure 11 to Figure 15 In the case of any of the structures shown in the figure, even in the case of using any of the structures, the protrusion amount of the electron emission surface 11 can be controlled with high accuracy and the life of the cathode can be prolonged.

[0081] Fig.16 FIG. 1 is a diagram showing an example of the structure of a drawing device in Embodiment 1. Fig.16 In the drawing apparatus 100, a drawing mechanism 150 and a control system circuit 160 are provided. The drawing apparatus 100 is an example of a multi-electron beam drawing apparatus. The drawing mechanism 150 includes an electron lens barrel 102 (multi-electron beam column) and a drawing chamber 103. An electron gun 201, an illumination lens 202, a forming aperture array substrate 203, a blanking aperture array mechanism 204, a reduction lens 205, a limiting aperture substrate 206, an objective lens 207, a deflector 208, and a deflector 209 are arranged in the electron lens barrel 102. An XY stage 105 is arranged in the drawing chamber 103. On the XY stage 105, a sample 101 such as a mask blank coated with a resist, which becomes a drawing object substrate during drawing, is arranged. The sample 101 includes an exposure mask when manufacturing a semiconductor device, or a semiconductor substrate (silicon wafer) for manufacturing a semiconductor device, etc. A reflection mirror 210 for measuring the position of the XY stage 105 is further arranged on the XY stage 105 .

[0082] The electron gun 201 (electron beam emission source) has the above-mentioned cathode mechanism 222. In addition to the cathode mechanism 222, the electron gun 201 also has a Wehnelt 224 (Wehnelt electrode) and an anode 226 (anode electrode). In addition, the anode 226 is controlled to be in a state of positive potential relative to the crystal 10 of the cathode mechanism 222, and extracts thermal electrons emitted from the crystal 10. For example, the anode 226 is grounded (grounded).

[0083] The control system circuit 160 includes a control computer 110, a memory 112, an electron gun power supply device 120, a deflection control circuit 130, digital / analog conversion (DAC) amplifier units 132 and 134, a stage position detector 139, and a storage device 140 such as a magnetic disk device. The control computer 110, the memory 112, the electron gun power supply device 120, the deflection control circuit 130, the DAC amplifier units 132 and 134, the stage position detector 139, and the storage device 140 are connected to each other via a bus not shown. The deflection control circuit 130 is connected to the DAC amplifier units 132 and 134 and the blanking aperture array mechanism 204. The output of the DAC amplifier unit 132 is connected to the deflector 209. The output of the DAC amplifier unit 134 is connected to the deflector 208. The deflector 208 is composed of electrodes of four or more poles, and is controlled by the deflection control circuit 130 via the DAC amplifier unit 134 for each electrode. The deflector 209 is composed of four or more electrodes, and each electrode is controlled by the deflection control circuit 130 via the DAC amplifier unit 132. The stage position detector 139 irradiates the laser to the reflection mirror 210 on the XY stage 105, and receives the reflected light from the reflection mirror 210. Then, the position of the XY stage 105 is measured by the principle of laser interference using the information of the reflected light.

[0084] Information input and output to the control computer 110 and information in operation are stored in the memory 112 at any time.

[0085] An accelerating voltage power supply circuit 236 , a bias voltage power supply circuit 234 , a filament power supply circuit 231 (filament power supply unit), and an ammeter 238 are arranged in the electron gun power supply device 120 .

[0086] The cathode (-) side of the acceleration voltage power supply circuit 236 is connected to the wirings 50 and 52 at both poles of the cathode mechanism 222 in the electron column 102. The anode (+) side of the acceleration voltage power supply circuit 236 is grounded (grounded) via an ammeter 238 connected in series. In addition, the cathode - of the acceleration voltage power supply circuit 236 is also branched and connected to the anode (+) of the bias voltage power supply circuit 234, and the cathode (-) of the bias voltage power supply circuit 234 is electrically connected to the Wehner 224 arranged between the cathode mechanism 222 and the anode 226. In other words, the bias voltage power supply circuit 234 is arranged so as to be electrically connected between the cathode (-) of the acceleration voltage power supply circuit 236 and the Wehner 224. Then, the filament power supply circuit 231 causes current to flow between the wirings 50 and 52 at both poles of the cathode mechanism 222, and heats the crystal 10 in the cathode mechanism 222 to a predetermined temperature. In other words, the filament power supply circuit 231 supplies filament power to the cathode mechanism 222. The filament power and the cathode temperature T (heating temperature of the crystal 10) can be defined in a certain relationship, and the cathode temperature can be heated to a desired temperature by the filament power. Therefore, the cathode temperature T is controlled by the filament power. The filament power is defined by the product of the current flowing between the two poles of the cathode mechanism 222 and the voltage applied between the two poles of the cathode mechanism 222 by the filament power supply circuit 231. The acceleration voltage power supply circuit 236 applies an acceleration voltage between the cathode mechanism 222 and the anode 226. The bias voltage power supply circuit 234 applies a negative bias voltage to the Wiener 224.

[0087] In addition, drawing data is input from outside the drawing device 100 and stored in the storage device 140. The drawing data generally defines information of a plurality of graphic patterns used for drawing. Specifically, a graphic code, coordinates, size, etc. are defined for each graphic pattern.

[0088] Here, in Fig.16 In the embodiment 1, the necessary configuration is described. The drawing device 100 may generally include other necessary configurations.

[0089] Fig.17 : is a conceptual diagram showing the structure of the formed aperture array substrate in Embodiment 1. Fig.17 In the embodiment, holes (openings) 22 are formed in a matrix with p columns in the vertical direction (y direction) and q columns in the horizontal direction (x direction) (p, q ≥ 2) at a predetermined arrangement pitch on the forming aperture array substrate 203. Fig.17For example, 512×512 rows of holes 22 are formed in the vertical and horizontal directions (x and y directions). Each hole 22 is formed by a rectangle of the same size and shape. Alternatively, it can also be a circle of the same diameter. The forming aperture array substrate 203 (beam forming mechanism) forms a multi-beam 20. Specifically, a part of the electron beam 200 passes through these multiple holes 22 respectively, thereby forming a multi-beam 20. In addition, the arrangement of the holes 22 is not limited to the following. Fig.17 For example, the holes in the kth column and the k+1th column in the longitudinal direction (y direction) may be arranged so as to be offset by a dimension a from each other in the transverse direction (x direction). Similarly, the holes in the k+1th column and the k+2th column in the longitudinal direction (y direction) may be arranged so as to be offset by a dimension b from each other in the transverse direction (x direction).

[0090] Fig.18 FIG. 2 is a cross-sectional view showing the structure of the blanking aperture array mechanism in Embodiment 1. Fig.18 As shown, the blanking aperture array mechanism 204 is provided with a semiconductor substrate 31 made of silicon or the like on a support platform 33. The central portion of the substrate 31 is cut, for example, from the back side, and is processed into a thin diaphragm region 330 (first region) of film thickness h. The periphery surrounding the diaphragm region 330 is formed into a thick peripheral region 332 (second region) of film thickness H. The upper surface of the diaphragm region 330 and the upper surface of the peripheral region 332 are formed to be at the same height position or substantially the same height position. The substrate 31 is held on the support platform 33 at the back of the peripheral region 332. The central portion of the support platform 33 is open, and the position of the diaphragm region 330 is located in the region of the opening of the support platform 33.

[0091] In the diaphragm region 330, Fig.17 The aperture array substrate 203 shown in the figure has through holes 25 (openings) for each beam of the multiple beams 20 to pass through, at positions corresponding to the holes 22. In other words, a plurality of through holes 25 are formed in an array in the diaphragm region 330 of the substrate 31, through which beams corresponding to the multiple beams 20 using electron beams pass. Furthermore, a plurality of electrode pairs having two electrodes are arranged at positions opposite to each other across the corresponding through holes 25 among the plurality of through holes 25. Specifically, as Figure 8 As shown in FIG. 1 , a set of control electrodes 24 and counter electrodes 26 for blanking deflection are arranged on the diaphragm region 330, with the through holes 25 corresponding to the positions near the through holes 25. In addition, a control circuit 41 (logic circuit) for applying a deflection voltage to the control electrodes 24 for the through holes 25 is arranged inside the substrate 31 and near the through holes 25 on the diaphragm region 330. The counter electrodes 26 for the beams are grounded.

[0092] An amplifier (an example of a switch circuit) not shown in the figure, such as a CMOS inverter circuit, is arranged in the control circuit 41. The output line (OUT) of the amplifier is connected to the control electrode 24. On the other hand, the ground potential is applied to the counter electrode 26. As a control signal, either an L (low) potential (for example, the ground potential) lower than the threshold voltage or an H (high) potential (for example, 1.5V) higher than the threshold voltage is applied to the input (IN) of the amplifier. In Embodiment 1, when the L potential is applied to the input (IN) of the amplifier, the output (OUT) of the amplifier becomes a positive potential (Vdd), and the corresponding beam is deflected by the electric field generated by the potential difference with the ground potential of the counter electrode 26, and shielded by the limiting aperture substrate 206, thereby controlling the beam to be closed (OFF). On the other hand, when an H potential is applied to the input (IN) of the amplifier (activated state), the output (OUT) of the amplifier becomes a ground potential, and the potential difference with the ground potential of the opposing electrode 26 disappears, and the corresponding beam is not deflected, so it passes through the limiting aperture substrate 206 and is controlled to be beam-on (ON).

[0093] The control electrode 24 and the counter electrode 26 set blanks and deflects the corresponding beams of the multi-beam 20 individually by the potential of the amplifiers that become the corresponding switch circuits. In this way, the plurality of blankers blank and deflect the corresponding beams of the multi-beam 20 after passing through the plurality of holes 22 (openings) of the aperture array substrate 203.

[0094] Next, the operation of the drawing mechanism 150 in the drawing device 100 is described. The drawing mechanism 150 draws a pattern on the sample 101 using thermal electrons emitted from the electron gun 201. Specifically, the operation is performed as follows. The electron beam 200 emitted from the electron gun 201 (electron emission source) illuminates the entire forming aperture array substrate 203 through the illumination lens 202. A plurality of rectangular holes 22 (openings) are formed in the forming aperture array substrate 203, and the electron beam 200 illuminates the area including all of the plurality of holes 22. Each portion of the electron beam 200 irradiated to the position of the plurality of holes 22 passes through the plurality of holes 22 of the forming aperture array substrate 203, thereby forming a plurality of electron beams (multiple beams 20) in, for example, a rectangular shape. The multi-beam 20 passes through each corresponding blanker (first deflector: individual blanking mechanism) of the blanking aperture array mechanism 204. The blanker deflects the electron beams that pass through individually (performs blanking deflection).

[0095] The multi-beam 20 that has passed through the blanking aperture array mechanism 204 is reduced by the reduction lens 205 and moves toward the hole in the center formed in the limiting aperture substrate 206. Here, the electron beam deflected by the blanker of the blanking aperture array mechanism 204 in the multi-beam 20 is deviated from the hole in the center of the limiting aperture substrate 206 and is shielded by the limiting aperture substrate 206. On the other hand, the electron beam that is not deflected by the blanker of the blanking aperture array mechanism 204 is as shown in FIG. Figure 1 As shown, the plurality of beams 20 pass through the hole in the center of the limiting aperture substrate 206. By turning on / off the individual blanking mechanism, blanking control is performed to control the opening (ON) / closing (OFF) of the beam. In addition, for each beam, a beam that has been emitted once is formed by the beam that has passed through the limiting aperture substrate 206 from the time when the beam is turned on to the time when the beam is turned off. The multi-beam 20 that has passed through the limiting aperture substrate 206 is focused by the objective lens 207 to form a pattern image of the desired reduction ratio. The beams that have passed through the limiting aperture substrate 206 (the entire multi-beam 20 that has passed through) are deflected in the same direction by the deflectors 208 and 209, and irradiate the various irradiation positions on the sample 101 of each beam. The multi-beams 20 irradiated once are ideally arranged at a pitch obtained by multiplying the arrangement pitch of the plurality of holes 22 of the forming aperture array substrate 203 by the above-mentioned desired reduction ratio.

[0096] Fig.19 1 is a conceptual diagram for explaining an example of a drawing operation in Implementation Example 1. Fig.19As shown, the drawing area 30 of the sample 101 is virtually divided into a plurality of strip areas 32 with a predetermined width in the y direction, for example. First, the XY stage 105 is moved and adjusted so that the irradiation area 34 that can be irradiated by the emission of the multi-beam 20 is located at the left end or further to the left of the first strip area 32, and drawing is started. When drawing the first strip area 32, the XY stage 105 is moved, for example, in the -x direction, so that drawing is performed relatively in the x direction. The XY stage 105 moves continuously, for example, at a constant speed. After the drawing of the first strip area 32 is completed, the stage position is moved in the -y direction, and adjusted so that the irradiation area 34 is relatively located at the right end or further to the right of the second strip area 32 in the y direction. This time, the XY stage 105 is moved, for example, in the x direction, and drawing is performed in the same manner in the -x direction. By drawing in the x direction in the third strip area 32 and in the -x direction in the fourth strip area 32, the drawing is performed while changing the direction alternately, thereby shortening the drawing time. However, the drawing is not limited to the case where the drawing is performed while changing the direction alternately. When drawing each strip area 32, the drawing may be performed in the same direction. In one transmission, multiple beams formed by passing through each hole 22 in the forming aperture array substrate 203 are used to form a maximum of multiple transmission patterns of the same number as the multiple holes 22 formed in the forming aperture array substrate 203. In addition, in Fig.19 In the example of FIG. 1 , each stripe area 32 is depicted once, but the present invention is not limited thereto. Multiple depiction in which the same area is depicted multiple times may be performed. When multiple depiction is performed, it is preferred to set the stripe area 32 of each path while shifting the position.

[0097] Fig. 20 FIG. 1 is a diagram showing an example of a multi-beam irradiation area and a drawing target pixel in Embodiment 1. Fig. 20 In the strip area 32, for example, a plurality of control grids 27 (design grids) are arranged in a grid shape with a beam size pitch of the multi-beam 20 on the surface of the sample 101. For example, it is preferably set to an arrangement pitch of about 10 nm. The plurality of control grids 27 become the designed irradiation positions of the multi-beam 20. The arrangement pitch of the control grids 27 is not limited to the beam size, and can be configured to be an arbitrary size that can be controlled as a deflection position of the deflector 209 regardless of the beam size. Furthermore, a plurality of pixels 36 that are virtually divided into a grid shape with the same size as the arrangement pitch of the control grids 27 as the center are set. Each pixel 36 becomes the irradiation unit area of ​​each beam of the multi-beam. In Fig. 20In the example, a case is shown where the drawing area of ​​the sample 101 is divided into a plurality of strip areas 32 with a width dimension substantially the same as the dimension of the irradiation area 34 (drawing area) that can be irradiated by one irradiation of the multi-beam 20, for example in the y direction. The x-direction dimension of the irradiation area 34 can be defined by a value obtained by multiplying the inter-beam spacing in the x direction of the multi-beam 20 by the number of beams in the x direction. The y-direction dimension of the irradiation area 34 can be defined by a value obtained by multiplying the inter-beam spacing in the y direction of the multi-beam 20 by the number of beams in the y direction. In addition, the width of the strip area 32 is not limited thereto. It is preferably a dimension that is n times (n is an integer greater than 1) the irradiation area 34. In Fig. 20 In the example, for example, the illustration of the multi-beam of 512×512 columns is omitted and represented as a multi-beam of 8×8 columns. Furthermore, in the irradiation area 34, a plurality of pixels 28 (beam drawing positions) that can be irradiated by irradiation of the multi-beam 20 once are shown. In other words, the spacing between adjacent pixels 28 becomes the spacing between the beams of the multi-beam in design. Fig. 20 In the example of , a sub-irradiation area 29 is formed by an area surrounded by the beam spacing. Fig. 20 In the example of FIG. 1 , the case where each sub-irradiation region 29 is composed of 4×4 pixels is shown.

[0098] Fig.21 FIG. 1 is a diagram for explaining an example of a multi-beam drawing method in Embodiment 1. Fig.21 In the figure, it is shown that Fig. 20 The portion of the sub-irradiation area 29 is depicted by each beam having coordinates (1, 3), (2, 3), (3, 3), ..., (512, 3) in the third segment of the y direction among the multi-beams in the strip area 32 shown. Figure 6 In the example, for example, a case where 4 pixels are depicted (exposed) during the period when the XY stage 105 moves a distance of 8 beam pitches is shown. During the period when the 4 pixels are depicted (exposed), the multi-beam 20 is deflected as a whole by the deflector 208 in such a way that the relative position of the irradiation area 34 and the sample 101 does not shift due to the movement of the XY stage 105, thereby causing the irradiation area 34 to follow the movement of the XY stage 105. In other words, tracking control is performed. Fig.21 The example of FIG. 1 shows a case where four pixels are drawn (exposed) while the pixel 36 of the beam irradiation target is moved in the y direction for each shot during the movement of a distance corresponding to eight beam pitches, thereby implementing one tracking cycle.

[0099] Specifically, the drawing mechanism 150 irradiates each control grid 27 with the corresponding beam of each open beam in the multi-beam 20 at the drawing time (irradiation time or exposure time) corresponding to each control grid 27 within the maximum irradiation time Ttr of each irradiation time of each beam in the emission. The maximum irradiation time Ttr is preset. In fact, the time obtained by adding the establishment time of beam deflection to the maximum irradiation time Ttr becomes the emission cycle, but here, the establishment time of beam deflection is omitted and the maximum irradiation time Ttr is expressed as the emission cycle. Then, when one tracking cycle ends, the tracking control is reset, and the tracking position is returned to the starting position of the next tracking cycle.

[0100] In addition, the depiction of the first pixel column from the right side of each sub-irradiation area 29 is completed, so after the tracking reset, in the next tracking cycle, the deflector 209 is first deflected to align (shift) the depiction position of the beam corresponding to the control grid 27 of the first level from the bottom and the second pixel from the right of each sub-irradiation area 29.

[0101] As described above, in the same tracking cycle, the irradiation region 34 is controlled by the deflector 208 to be in the same relative position with respect to the sample 101, and each emission is performed while being shifted by one control grid 27 (pixel 36) by the deflector 209. Then, after one tracking cycle is completed, the tracking position of the irradiation region 34 is returned, and as shown in the lower part of FIG. 10, for example, the first emission position is aligned with the position after being shifted by one control grid (one pixel), and the next tracking control is performed, and each emission is performed while being shifted by one control grid (one pixel) by the deflector 209. In the depiction of the strip region 32, this action is repeated, and the position of the irradiation region 34 is sequentially moved to the irradiation regions 34a to 34o, and the depiction of the strip region is performed.

[0102] Furthermore, which control grid 27 (pixel 36) on the sample 101 is irradiated with which beam of the multi-beam is determined by the drawing sequence. If the sub-irradiation area 29 is an area of ​​n×n pixels, n control grids (n pixels) are drawn in one tracking operation. In the next tracking operation, n pixels are drawn in the same manner by a beam different from the above beam. In this way, by drawing n pixels each by a different beam in n tracking operations, all pixels in an area of ​​n×n pixels are drawn. For other sub-irradiation areas 29 of n×n pixels in the irradiation area of ​​the multi-beam, the same operation is performed at the same time and drawing is performed in the same manner.

[0103] As described above, according to Embodiment 1, the protrusion amount of the crystal 10 from the upper surface of the holder 12 can be controlled with high accuracy. As a result, the life of the cathode mechanism 222 that can obtain a desired brightness distribution can be extended. Therefore, the downtime of the drawing apparatus 100 can be reduced.

[0104] The embodiments have been described above with reference to specific examples, but the present invention is not limited to these specific examples.

[0105] In addition, the description of the device structure, control method, etc. that are not directly necessary for the description of the present invention is omitted, but the desired device structure and control method can be appropriately selected and used. For example, the description of the control unit structure for controlling the rendering device 100 is omitted, but of course the desired control unit structure can be appropriately selected and used.

[0106] Furthermore, all cathode mechanisms of electron guns, electron guns, and electron beam mapping devices that include the elements of the present invention and can be appropriately designed and modified by those skilled in the art are within the scope of the present invention.

[0107] [Explanation of Reference Numerals]

[0108] Part 2, 3, 4, 5

[0109] 10 Crystal

[0110] 11 Electron emission surface

[0111] 12. Holding unit

[0112] 13. Inhibition

[0113] 14, 16 columns

[0114] 18, 19 base

[0115] 20 Multi-beam

[0116] 22 holes

[0117] 24 Control electrode

[0118] 25 through hole

[0119] 26 Counter electrode

[0120] 27 Control Grid

[0121] 28 pixels

[0122] 29 sub-irradiation area

[0123] 30 Drawing area

[0124] 32 Stripe Area

[0125] 31 substrate

[0126] 33 Supporting platform

[0127] 34 Irradiation area

[0128] 35 unit area

[0129] 36 pixels

[0130] 41 Control circuit

[0131] 42 Opening

[0132] 43 cylindrical countersunk surface

[0133] 54 Insulator

[0134] 50, 52 wiring

[0135] 60 Crystal

[0136] 61 Filling material

[0137] 62 Holding unit

[0138] 70 upper

[0139] 80 lower part

[0140] 81 Support surface

[0141] 100 Drawing Device

[0142] 101 Sample

[0143] 102 Electronic tube

[0144] 103 Drawing Room

[0145] 105 XY stage

[0146] 110 Control Computer

[0147] 112 Memory

[0148] 120 Electron gun power supply device

[0149] 130 deflection control circuit

[0150] 132, 134 DAC amplifier unit

[0151] 139 Stage position detector

[0152] 140 Storage Device

[0153] 150 Depicting Organization

[0154] 160 Control system circuit

[0155] 200 Electron beam

[0156] 201 Electron Gun

[0157] 202 Lighting lens

[0158] 203 Forming aperture array substrate

[0159] 204 Blanking Aperture Array Mechanism

[0160] 205 Zooming Lens

[0161] 206 Restricted Aperture Substrate

[0162] 207 Objective

[0163] 208, 209 Deflector

[0164] 210 Reflector

[0165] 222 Cathode mechanism

[0166] 224 Vinal

[0167] 226 Anode

[0168] 231 Filament power supply circuit

[0169] 234 Bias voltage power supply circuit

[0170] 236 Acceleration voltage power supply circuit

[0171] 238 Ammeter

[0172] 330 Diaphragm area

[0173] 332 Peripheral area

Claims

1. A cathode mechanism of an electron gun, comprising: a crystal having an upper portion and a lower portion, the upper portion being columnar, truncated cone-shaped or a combination thereof and having a first surface that emits thermal electrons by heating, the lower portion being integrally formed with the upper portion and having a second surface that is parallel to the first surface and has a diameter larger than the maximum diameter of the upper portion; a holding portion formed in a cylindrical shape having a plurality of different inner diameters having a first diameter and a second diameter larger than the first diameter from an upper surface side, the crystal being held in a state where the first surface of the crystal protrudes from the upper surface and abuts against the second surface of the crystal in the cylinder; and a suppressing portion suppressing the crystal on the back side of the lower portion of the crystal in a manner that prevents the crystal from falling off the holding portion, the holding portion being formed with an opening portion, the opening portion being the first diameter from the upper surface to a mid-height position, or being the first diameter at the mid-height position while expanding from the upper surface, and being the second diameter larger than the first diameter from the mid-height position toward the back side. 2 . The cathode mechanism of an electron gun according to claim 1 , wherein an amount of protrusion of the first surface from the upper surface of the holding portion is 10% or less of a diameter of the first surface. 3 . The cathode mechanism of an electron gun according to claim 1 , further comprising a first support column and a second support column for supporting the holding portion, wherein the first support column and the second support column extend while maintaining the same cross-sectional dimensions. 4 . The cathode mechanism of an electron gun according to claim 1 , wherein the holding portion and the suppressing portion are made of the same material. 5 . The cathode structure of an electron gun according to claim 3 , wherein the first support and the second support are opposed to each other with a width dimension equal to or larger than the second diameter dimension spaced therebetween. 6 . The cathode mechanism of an electron gun according to claim 3 , further comprising: a first base portion supporting the first support column; and a second base portion supporting the second support column. 7 . The cathode mechanism of an electron gun according to claim 6 , wherein one end of the first support column is connected to the holding portion and the other end is connected to the first base portion, and one end of the second support column is connected to the holding portion and the other end is connected to the second base portion. 8 . The cathode mechanism of an electron gun according to claim 6 , wherein the holding portion, the first support column, the second support column, the first base portion, and the second base portion are formed by an integral structure formed of the same material.

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