Light-emitting element

Abstract

The present invention discloses a light-emitting element, which includes a semiconductor platform; a first reflective structure composed of a metal material and located on the semiconductor platform and including a first opening; and a second reflective structure composed of an insulating material and located on the first reflective structure, the second reflective structure including a second opening, wherein the first opening of the first reflective structure exposes the second opening of the second reflective structure.

Description

[0001] This application is a divisional application of the Chinese invention patent application (application number: 201811609729.3, application date: December 27, 2018, invention name: light-emitting element). Technical Field

[0002] The present invention relates to a light-emitting element, and in particular to a light-emitting element comprising a semiconductor platform and a reflective structure located on the semiconductor platform. Background Art

[0003] Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices. Their advantages include low power consumption, low heat generation, long operating life, shock resistance, compact size, fast response speed, and excellent optoelectronic properties, such as stable emission wavelength. Therefore, LEDs are widely used in household appliances, device indicator lights, and optoelectronic products. Summary of the Invention

[0004] The present invention discloses a light-emitting element, which includes a semiconductor platform; a first reflective structure composed of a metal material and located on the semiconductor platform and including a first opening; and a second reflective structure composed of an insulating material and located on the first reflective structure, the second reflective structure including a second opening, wherein the first opening of the first reflective structure exposes the second opening of the second reflective structure.

[0005] The present invention discloses a light-emitting element, which includes a semiconductor platform; a first reflective structure comprising a metal material located on the semiconductor platform and comprising a first opening; and a second reflective structure comprising an insulating material located on the first reflective structure, wherein the first reflective structure is electrically insulated from the semiconductor platform. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 is a top view of a light emitting element 1 disclosed in one embodiment of the present invention;

[0007] Figure 2 To follow Figure 1 A sectional view of the tangent line A-A';

[0008] Figure 3 To follow Figure 1 A cross-sectional view of the tangent line BB';

[0009] Figure 4 To follow Figure 1 A cross-sectional view of the tangent line C-C';

[0010] Figure 5 To follow Figure 1 A sectional view of the tangent line D-D';

[0011] Figure 6 It is a partial top view of the light emitting element 1 disclosed in one embodiment of the present invention;

[0012] Figure 7 To follow Figure 6 A sectional view of the tangent line E-E';

[0013] Figure 8 In one embodiment of the present invention, Figure 1 A cross-sectional view of the X region;

[0014] Figure 9 is a schematic diagram of a light emitting device 2 according to an embodiment of the present invention;

[0015] Figure 10 FIG. 1 is a schematic diagram of a light emitting device 3 according to an embodiment of the present invention.

[0016] Explanation of symbols

[0017] 1 Light-emitting element

[0018] 10 substrate

[0019] 10d cutting path

[0020] 10s side

[0021] 11. First semiconductor layer

[0022] 12. Second semiconductor layer

[0023] 12S watch face

[0024] 13 Active layer

[0025] 100 semiconductor stacks

[0026] 100d cutting path

[0027] 100e surround

[0028] 100t semiconductor platform

[0029] 100v through-hole

[0030] S1 lateral wall

[0031] S2 medial wall

[0032] 14 Transparent conductive layer

[0033] 15 Current blocking layer

[0034] 151 Blocking Pad

[0035] 152 Blocking extension

[0036] 16a First contact electrode

[0037] 16b second contact electrode

[0038] 161b second contact pad

[0039] 162b second contact extension

[0040] 17 First insulation layer

[0041] 171 first opening of first insulating layer

[0042] 172 first insulating layer second opening

[0043] 18 First Reflection Structure

[0044] 180 First Opening

[0045] 181 first reflective extension

[0046] 182 first reflective surround portion

[0047] 19 Second reflection structure

[0048] 191 second reflective structure first opening

[0049] 192 second reflective structure second opening

[0050] 20a First extension electrode

[0051] 201a First contact part

[0052] 202a First extension portion

[0053] 20b second extension electrode

[0054] 201b Second contact part

[0055] 202b Second extension

[0056] 200 Ejector Area

[0057] 21 Second insulation layer

[0058] 211 second insulating layer first opening

[0059] 212 second opening of second insulating layer

[0060] 22a First electrode pad

[0061] 22b Second electrode pad

[0062] 2 Light-emitting device

[0063] 51 substrate

[0064] 511 First Gasket DETAILED DESCRIPTION

[0065] In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the relevant illustrations. The embodiments shown below are used to illustrate the light-emitting elements of the present invention, and the present invention is not limited to the following embodiments. In addition, the dimensions, materials, shapes, relative configurations, etc. of the constituent parts recorded in the embodiments of this specification are not limited to these unless otherwise specified, and are merely for simple explanation. The sizes or positional relationships of the components shown in the various figures may be exaggerated for the sake of clarity. Furthermore, in the following description, components of the same or similar nature are displayed with the same names and symbols in order to appropriately omit detailed descriptions.

[0066] Figure 1 It is a top view of a light emitting element 1 disclosed in an embodiment of the present invention. Figure 2 To follow Figure 1 Cross-sectional view of the tangent line AA'. Figure 3 To follow Figure 1 Cross-sectional view of the tangent line BB'. Figure 4 To follow Figure 1 Cross-sectional view of the tangent line C-C'. Figure 5 To follow Figure 1 Cross-sectional view of the tangent line D-D'. Figure 6 It is a partial top view of the light emitting element 1 disclosed in one embodiment of the present invention. Figure 7 To follow Figure 6 Cross-sectional view of the tangent line E-E'. Figure 8 In one embodiment of the present invention, Figure 1 Cross-sectional view of the X region.

[0067] like Figure 1 and Figure 6 The top view of Figures 2 to 5 、 Figure 7 、 Figure 8 As shown in the cross-sectional view of FIG, the light emitting element 1 includes a semiconductor platform 100t having a semiconductor stack 100; a first reflective structure 18 including a metal material is located on the semiconductor platform 100t; and a second reflective structure 19 including an insulating material is located on the first reflective structure 18. Figure 5 and Figure 7 As shown, the first reflective structure 18 includes a first opening 180, and the second reflective structure 19 includes a second opening 192, which is positioned relative to the first opening 180. The second reflective structure 19 covers the first reflective structure 18 at the first opening 180, and the second opening 192 is exposed in the first opening 180. In other words, the first opening 180 has a width greater than that of the second opening 192.

[0068] like Figure 1 As shown in the top view of FIG, the light emitting element 1 may have a rectangular or square shape and may be Figures 2 to 5 As shown in the side view, light-emitting element 1 includes a substrate 10 having a plurality of side surfaces 10s located around a perimeter of light-emitting element 1 to form a rectangular or square shape. As seen from above, the dimensions of light-emitting element 1 can be, for example, a square shape of 1000 μm × 1000 μm or 700 μm × 700 μm, or a rectangular shape of similar size, but are not particularly limited thereto.

[0069] like Figures 2 to 5 As shown, the semiconductor stack 100 includes a first semiconductor layer 11, a second semiconductor layer 12, and an active layer 13 located between the first semiconductor layer 11 and the second semiconductor layer 12. The wavelength of light emitted by the light emitting element 1 can be adjusted by changing the physical and chemical composition of one or more layers in the semiconductor stack 100. The material of the semiconductor stack 100 includes III-V semiconductor materials, such as Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y) P, where 0 ≤ x, y ≤ 1; (x + y) ≤ 1. When the material of the semiconductor stack 100 is an AlInGaP series material, it can emit red light with a wavelength between 610 nm and 650 nm, or green light with a wavelength between 530 nm and 570 nm. When the material of the semiconductor stack 100 is an InGaN series material, it can emit blue light with a wavelength between 400 nm and 490 nm. When the material of the semiconductor stack 100 is an AlGaN series or AlInGaN series material, it can emit ultraviolet light with a wavelength between 400 nm and 250 nm.

[0070] The first semiconductor layer 11 and the second semiconductor layer 12 can be cladding layers. They have different conductivity types, electrical properties, and polarities, or they can provide electrons or holes based on the doping elements. For example, the first semiconductor layer 11 is an n-type semiconductor, and the second semiconductor layer 12 is a p-type semiconductor. The active layer 13 is formed between the first and second semiconductor layers 11 and 12. Electrons and holes recombine in the active layer 13 under current drive, converting electrical energy into light energy to emit light. The active layer 13 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the active layer 13 can be a neutral, p-type, or n-type semiconductor. The first semiconductor layer 11, the second semiconductor layer 12, or the active layer 13 can be a single layer or a structure containing multiple sublayers.

[0071] like Figures 2 to 5 、 Figure 7 、 Figure 8 As shown in the cross-sectional view of , the light-emitting element 1 includes one or more semiconductor platforms 100t, wherein the one or more semiconductor platforms 100t are composed of a semiconductor stack 100. In one embodiment of the invention, each semiconductor platform 100t is formed by removing a portion of the second semiconductor layer 12 and the active layer 13 to form a structure including a first semiconductor layer 11, a second semiconductor layer 12, and an active layer 13. The multiple semiconductor platforms 100t can be separated from each other to expose the substrate 10 or connected to each other through the first semiconductor layer 11. Each semiconductor platform 100t includes an upper surface and a lower surface, and the active layer 13 includes a first upper surface and a second lower surface, wherein a first distance is formed between the upper surface of the semiconductor platform 100t and the first upper surface of the active layer 13, and a second distance is formed between the lower surface of the semiconductor platform 100t and the second lower surface of the active layer 13, and the second distance is greater than the first distance.

[0072] Figure 8 In one embodiment of the present invention, Figure 1 The cross-sectional view of the X region. Figure 1 and Figure 8As shown, the light-emitting device 1 includes a surrounding portion 100e that surrounds one or more semiconductor platforms 100t. The surrounding portion 100e is located at the outermost edge of the one or more semiconductor platforms 100t. The surrounding portion 100e is formed by removing the second semiconductor layer 12 and the active layer 13 from the periphery of the light-emitting device 1. The surrounding portion 100e has a rectangular or polygonal ring shape when viewed from above. The corners of the rectangle or polygon may be rounded to prevent current concentration at the corners of the semiconductor platform 100t.

[0073] In one embodiment of the invention, Figure 8 As shown, the surrounding portion 100e includes a first surrounding portion 1001e. The first surrounding portion 1001e is formed by removing the second semiconductor layer 12 and the active layer 13 around the semiconductor platform 100t, and includes a portion of the first semiconductor layer 11. In other words, the first surrounding portion 1001e exposes the surface of the first semiconductor layer 11, and the first surrounding portion 1001e does not include the second semiconductor layer 12 and the active layer 13. In another embodiment of the invention, Figure 8 As shown, the surrounding portion 100e further includes a second surrounding portion 1002e located around the first surrounding portion 1001e. Compared to the first surrounding portion 1001e, the second surrounding portion 1002e is closer to the side surface 10s of the substrate 10.

[0074] like Figure 8 As shown, the second surrounding portion 1002e is located around the semiconductor platform 100t and includes the same structure as the semiconductor platform 100t. Specifically, the second surrounding portion 1002e includes a first semiconductor layer 11, a second semiconductor layer 12, and an active layer 13. The first surrounding portion 1001e is located between the second surrounding portion 1002e and the semiconductor platform 100t. The semiconductor platform 100t is separated from the second surrounding portion 1002e by a distance, wherein the first surrounding portion 1001e exposes the surface of the first semiconductor layer 11.

[0075] In another embodiment of the invention (not shown), the surrounding portion 100e includes a plurality of first surrounding portions 1001e and a plurality of second surrounding portions 1002e arranged alternately to enhance adhesion between the second reflective structure 19 and the semiconductor stack 100, thereby preventing the second reflective structure 19 from peeling off the surface of the semiconductor stack 100. When the surrounding portion 100e includes a plurality of first surrounding portions 1001e and a plurality of second surrounding portions 1002e, the first surrounding portion 1001e may be located at the outermost periphery of the light-emitting element 1, or the second surrounding portion 1002e may be located at the outermost periphery of the light-emitting element 1. When the first surrounding portion 1001e is located at the outermost periphery of the light-emitting element 1, the first surrounding portion 1001e includes the first semiconductor layer 11 having a first outer wall that is flush with or level with the side surface 10s of the substrate 10, or the first outer wall is located inward of the side surface 10s of the substrate 10 and spaced a distance from the side surface 10s of the substrate 10 to expose the top surface of the substrate 10. When the second surrounding portion 1002e is located at the outermost periphery of the light-emitting element 1, the second surrounding portion 1002e includes a semiconductor stack 100 having a second outer wall, and the second outer wall is flush with or level with the side surface 10s of the substrate 10, or the second outer wall is located on the inner side of the side surface 10s of the substrate 10, and the second outer wall is separated from the side surface 10s of the substrate 10 by a distance to expose the upper surface of the substrate 10.

[0076] The light emitting element 1 may include one or more through holes 100v surrounded by the second semiconductor layer 12 and / or the active layer 13. The through hole 100v is formed by removing the second semiconductor layer 12 and the active layer 13 to expose the surface of the first semiconductor layer 11. The through hole 100v is located in the semiconductor platform 100t and is surrounded by the second semiconductor layer 12 and the active layer 13. The top view shape of the through hole 100v includes a circle, an ellipse, a rectangle, a polygon, or any shape. A plurality of through holes 100v may be arranged in a plurality of rows, and the through holes 100v on any two adjacent rows or each two adjacent rows may be aligned with each other or staggered. The number of through holes 100v is not particularly limited. Figure 1 As shown in the top view of FIG, the plurality of through holes 100v can be arranged in a fixed pattern at fixed intervals so that the current can be evenly distributed in the horizontal direction.

[0077] A substrate 10 may be disposed on one side of the semiconductor stack 100. Substrate 10 may be a growth substrate, including a gallium arsenide (GaAs) wafer used for epitaxial growth of aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, gallium nitride (GaN) wafer, or silicon carbide (SiC) wafer used for growth of indium gallium nitride (InGaN). In another embodiment, substrate 10 may be a support substrate. The growth substrate originally used for epitaxial growth of the semiconductor stack 100 may be selectively removed based on application requirements, and the semiconductor stack 100 may then be transferred to the aforementioned support substrate.

[0078] In one embodiment, when the semiconductor stack 100 is transferred from the growth substrate to the support substrate, each semiconductor platform 100t includes an upper surface and a lower surface, and the active layer 13 includes a first upper surface and a second lower surface, wherein the upper surface of the semiconductor platform 100t and the first upper surface of the active layer 13 are respectively farther away from the support substrate than the lower surface of the semiconductor platform 100t and the second lower surface of the active layer 13, a first distance is formed between the upper surface of the semiconductor platform 100t and the first upper surface of the active layer 13, and a second distance is formed between the lower surface of the semiconductor platform 100t and the second lower surface of the active layer 13, and the first distance is greater than the second distance.

[0079] The support substrate includes a conductive material, such as silicon (Si), aluminum (Al), copper (Cu), tungsten (W), molybdenum (Mo), gold (Au), silver (Ag), silicon carbide (SiC), or alloys thereof, or a thermally conductive material, such as diamond, graphite, or aluminum nitride. Furthermore, although not shown, the surface of the substrate 10 that contacts the semiconductor stack 100 may have a roughened surface. The roughened surface may have an irregular morphology or a regular morphology, such as a surface having multiple hemispherical shapes, a surface having multiple conical shapes, or a surface having multiple polygonal pyramidal shapes.

[0080] In one embodiment of the present invention, a semiconductor stack 100 having optoelectronic properties, such as a light-emitting stack, is formed on a substrate 10 by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), physical vapor deposition (PVD), or ion plating. PVD includes sputtering or evaporation.

[0081] In one embodiment of the present invention, the semiconductor stack 100 may further include a buffer layer (not shown) located between the first semiconductor layer 11 and the substrate 10 to release the stress generated by the material lattice mismatch between the substrate 10 and the semiconductor stack 100, so as to reduce dislocations and lattice defects, thereby improving the epitaxial quality. The buffer layer may be a single layer or a structure comprising multiple sublayers. In one embodiment, PVD aluminum nitride (AlN) may be selected as a buffer layer, formed between the semiconductor stack 100 and the substrate 10, to improve the epitaxial quality of the semiconductor stack 100. In one embodiment, the target material for forming PVD aluminum nitride (AlN) is composed of aluminum nitride. In another embodiment, a target material composed of aluminum is used to reactively form aluminum nitride with an aluminum target material in a nitrogen source environment.

[0082] refer to Figures 2 to 5As shown, in one example of the invention, the light-emitting element 1 further includes a cutting path 10d located around the semiconductor platform 100t. In one example of the invention (not shown), the surrounding portion 100e is located between the cutting path 10d and the semiconductor platform 100t, and the cutting path 10d surrounds the surrounding portion 100e. Compared with the surrounding portion 100e, the cutting path 10d is located at the outermost side of the light-emitting element 1. The cutting path 10d removes the first semiconductor layer 11, the second semiconductor layer 12 and the active layer 13 to expose the surface of the substrate 10. The top view shape of the cutting path 10d includes a rectangular or polygonal ring. In one embodiment, the surface of the substrate 10 exposed by the cutting path 10d is a rough surface. The rough surface can be a surface with an irregular shape or a surface with a regular shape, such as a surface with multiple hemispherical shapes, a surface with multiple conical shapes, or a surface with multiple polygonal cone shapes.

[0083] The semiconductor platform 100t includes multiple outer sidewalls S1 and multiple inner sidewalls S2, wherein the outer sidewall S1 is a sidewall of the first semiconductor layer 11, the second semiconductor layer 12, and the active layer 13. One end of the outer sidewall S1 is connected to a surface 12s of the second semiconductor layer 12, and the other end of the outer sidewall S1 is connected to the upper surface of the substrate 10. One end of the inner sidewall S2 is connected to the surface 12s of the second semiconductor layer 12, and the other end of the inner sidewall S2 is connected to a surface 11s of the first semiconductor layer 11. The multiple inner sidewalls S2 constitute a sidewall of the through hole 100v. Figure 2 As shown, an acute angle, an obtuse angle, or a right angle is formed between the inner sidewall S2 and the surface 11 s of the first semiconductor layer 11 , and an acute angle, an obtuse angle, or a right angle is formed between the outer sidewall S1 and the upper surface of the substrate 10 .

[0084] The light emitting element 1 includes one or more current blocking layers 15 located on the second semiconductor layer 12. The current blocking layer 15 is formed of a non-conductive material, including aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x The current blocking layer 15 may include a distributed Bragg reflector (DBR), wherein the distributed Bragg reflector has insulating materials with different refractive indices stacked on each other. The current blocking layer 15 has a light transmittance of more than 80% or a light reflectivity of more than 80% for the light emitted by the active layer 13. Figure 6As shown, the current blocking layer 15 includes one or more blocking pads 151 and one or more blocking extensions 152. The blocking pads 151 are polygonal, circular, or elliptical in top view, and the blocking extensions 152 are rectangular or polygonal in top view. In a cross-sectional view taken in the same direction, the blocking pads 151 have a greater width than the blocking extensions 152. The current blocking layer 15 has an inclined side surface to reduce the risk of delamination from the second semiconductor layer 12 and improve coverage of subsequent stacking layers.

[0085] The light-emitting element 1 includes a transparent conductive layer 14 disposed on a second semiconductor layer 12 and a current-blocking layer 15, with the transparent conductive layer 14 covering a sidewall of the current-blocking layer 15. The surface profile of the transparent conductive layer 14 covering the current-blocking layer 15 corresponds to the profile of the current-blocking layer 15, such as a polygonal, circular, or elliptical shape corresponding to the blocking pad 151 and a rectangular or polygonal profile corresponding to the blocking extension 152. A cross-sectional view of the transparent conductive layer 14 exhibits a stepped profile rather than a flat profile. The transparent conductive layer 14 is made of a material that is transparent to light emitted by the active layer 13, such as indium tin oxide (ITO) or indium zinc oxide (IZO). Because the transparent conductive layer 14 is formed over substantially the entire surface of the second semiconductor layer 12 and forms a low-resistance contact, such as an ohmic contact, with the second semiconductor layer 12, current can diffuse uniformly through the transparent conductive layer 14. In one embodiment, the transparent conductive layer 14 includes an outermost side, which is spaced apart from the outer sidewall S1 of the semiconductor platform 100 t by a distance less than 20 μm, preferably less than 10 μm, and more preferably less than 5 μm.

[0086] The thickness of the transparent conductive layer 14 can be in the range of 0.1 nm to 100 nm. If the thickness of the transparent conductive layer 14 is less than 0.1 nm, it is too thin to effectively form an ohmic contact with the second semiconductor layer 12. Furthermore, if the thickness of the transparent conductive layer 14 is greater than 100 nm, it partially absorbs the light emitted by the active layer 13, resulting in a reduction in the brightness of the light-emitting element 1.

[0087] The light-emitting element 1 includes one or more first contact electrodes 16a disposed on the first semiconductor layer 11 for electrical connection to the first semiconductor layer 11, and one or more second contact electrodes 16b disposed on the second semiconductor layer 12 for electrical connection to the second semiconductor layer 12. The one or more first contact electrodes 16a are located within one or more through-holes 100v, contacting the first semiconductor layer 11. When viewed from a top view of the light-emitting element 1, the plurality of first contact electrodes 16a are separated from one another. To ensure uniform current diffusion through the second semiconductor layer 12, the second contact electrodes 16b overlap with the current blocking layer 15. In one embodiment, the second contact electrodes 16b and the current blocking layer 15 have similar shapes; in another embodiment, the second contact electrodes 16b and the current blocking layer 15 have different shapes. The current blocking layer 15 has an area larger than that of the second contact electrodes 16b. The transparent conductive layer 14 includes a portion disposed between the current blocking layer 15 and the second contact electrodes 16b, and another portion directly contacting the second semiconductor layer 12. When current passes through the second contact electrode 16b, because the current blocking layer 15 is located below the second contact electrode 16b, the current cannot pass through the current blocking layer 15 and conduct directly downward from the second contact electrode to the second semiconductor layer 12. Instead, the current is forced to flow through the transparent conductive layer 14, where it diffuses horizontally and conducts to the second semiconductor layer 12. The first and second contact electrodes 16a and 16b have inclined side surfaces to reduce the risk of delamination from the transparent conductive layer 14 or the first semiconductor layer 11 and improve the coverage of subsequent layers. In one embodiment, the inclined side surface of the first contact electrode 16a forms an angle between 30 degrees and 75 degrees with the surface of the first semiconductor layer 11. The inclined side surface of the second contact electrode 16b forms an angle between 30 degrees and 75 degrees with the surface of the transparent conductive layer 14.

[0088] like Figure 6As shown, the second contact electrode 16b includes one or more second contact pads 161b and one or more second contact extensions 162b. From a top view of the light-emitting device 1, the top-view shape of the second contact pads 161b is substantially the same as or different from the shape of the blocking pad 151, and / or the top-view shape of the second contact extensions 162b is substantially the same as or different from the shape of the blocking extensions 152. In this embodiment, the top-view shape of the second contact pads 161b is the same as that of the blocking pad 151, including a circular or elliptical shape, while the top-view shape of the second contact extensions 162b is substantially the same as that of the blocking extensions 152, including a rectangular or polygonal shape. In another embodiment, the top-view shape of the second contact pads 161b is substantially different from that of the blocking pad 151, including a circular or elliptical shape, while the top-view shape of the blocking pad 151 is including a rectangular or polygonal shape. In a cross-sectional view taken in the same direction, the second contact pad 161b has a width greater than that of the second contact extension 162b. In one embodiment, the blocking pad 151 has a width greater than that of the second contact pad 161b. In one embodiment, the blocking extension 152 has a width greater than that of the second contact extension 162b. In one embodiment, the blocking extension 152 has a width less than that of the second contact extension 162b. In one embodiment, the top-view shape of the second contact extension 162b is substantially different from that of the blocking extension 152. The top-view shape of the second contact extension 162b is rectangular or polygonal, while the top-view shape of the blocking extension 152 is segmented and discontinuous.

[0089] From a top view of the self-luminous element 1, the first contact electrode 16a and the through hole 100v have the same shape, the second contact pad 161b and the blocking pad 151 have the same shape, and the second contact extension 162b and the blocking extension 152 have the same shape. Figure 1 As shown, an outer edge of the first contact electrode 16a and an outer edge of the through hole 100v are formed concentrically. An outer edge of the second contact pad 161b and an outer edge of the blocking pad 151 are formed concentrically. In one embodiment, the first contact electrode 16a may be formed in a circular shape with a radius R1, and the through hole 100v may be formed in a circular shape with a radius R0, where R0 is greater than R1. The second contact pad 161b may be formed in a circular shape with a radius R2, and the blocking pad 151 may be formed in a circular shape with a radius r, where r is greater than R2.

[0090] The first contact electrode 16a and the second contact electrode 16b include a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys thereof. The first contact electrode 16a and the second contact electrode 16b may be composed of a single layer or multiple layers. For example, the first contact electrode 16a or the second contact electrode 16b may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer.

[0091] The thickness of the first contact electrode 16a or the second contact electrode 16b is preferably 0.5 μm to 2.5 μm. In one embodiment, an upper surface of the first contact electrode 16a is lower than the surface 12S of the second semiconductor layer 12. In other words, the thickness of the first contact electrode 16a is less than the depth of the through hole 100v. In another embodiment, an upper surface of the first contact electrode 16a protrudes above the surface 12S of the second semiconductor layer 12. In other words, the thickness of the first contact electrode 16a is greater than the depth of the through hole 100v. If the thickness of the first contact electrode 16a or the second contact electrode 16b is less than 0.5 μm, it cannot effectively conduct current. Furthermore, if the thickness of the first contact electrode 16a or the second contact electrode 16b is greater than 2.5 μm, excessive production time will result in manufacturing losses.

[0092] The light-emitting device 1 includes a first insulating layer 17 covering the semiconductor platform 100t, the transparent conductive layer 14, the first contact electrode 16a, and the second contact electrode 16b. The first insulating layer 17 includes one or more first insulating layer first openings 171 located above the first contact electrode 16a, exposing a surface of the first contact electrode 16a. The first insulating layer 17 also includes one or more first insulating layer second openings 172 located above the second contact pad 161b, exposing a surface of the second contact pad 161b. The second contact extension 162b is covered by the first insulating layer 17.

[0093] The first insulating layer 17 is formed of a non-conductive material, including an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

[0094] like Figure 1 and Figure 5 As shown, a first reflective structure 18 includes one or more first reflective extensions 181 located on the second contact electrode 16b and a first reflective surround 182 located around the semiconductor platform 100t to surround the one or more first reflective extensions 181, wherein the positions of the multiple first reflective extensions 181 are located on the multiple second contact extensions 162b and / or the blocking extension 152, the multiple first reflective extensions 181 are separated from each other, and the multiple first reflective extensions 181 and the multiple second contact extensions 162b and / or the blocking extension 152 have the same or similar shapes. A first opening 180 is included between the one or more first reflective extensions 181 to expose a surface of the second contact pad 161b. Figure 2 and Figure 3 As shown, the first reflective extension 181 covers one or more surfaces of the second contact extension 162b, and the first insulating layer 17 is interposed between the first reflective extension 181 and the second contact extension 162b, preventing the first reflective extension 181 from directly contacting the second contact extension 162b, thereby electrically insulating the first reflective extension 181 from the semiconductor platform 100t. Since the semiconductor stack 100 below the blocking pad 151 and the blocking extension 152 is not directly injected with current, the first reflective extension 181 covers a surface and / or a sidewall of the blocking pad 151 and / or the blocking extension 152, so that lateral light in this area can be reflected by the first reflective extension 181, thereby increasing the light extraction efficiency and uniformity of the light emitting element 1. Figure 6As shown, the first reflective extension 181 has a width greater than the width of the second contact extension 162b and / or the blocking extension 152. In one embodiment, the first reflective extension 181 covers a sidewall of the second contact extension 162b. The material of the first reflective structure 18 includes a high-reflectivity metal material, such as silver (Ag), aluminum (Al), gold (Au), palladium (Pd), or rhodium (Rh), or alloys thereof. High reflectivity herein refers to a reflectivity of 80% or greater for the wavelength of light emitted by the active layer 13.

[0095] like Figures 2 to 5 As shown in FIG. 1 , in one embodiment of the present invention, the first reflective surrounding portion 182 surrounds and covers the upper surface and outer sidewall S1 of the semiconductor platform 100t, and the first reflective surrounding portion 182 is spaced apart from the first reflective extension portion 181 by a distance. The first insulating layer 17 is interposed between the first reflective surrounding portion 182 and the semiconductor platform 100t, thereby electrically insulating the first reflective surrounding portion 182 from the semiconductor platform 100t. Figure 8 As shown, in one embodiment of the invention, the light-emitting element 1 includes a surrounding portion 100e, which includes a first surrounding portion 1001e to expose the surface of the first semiconductor layer 11. The first reflective surrounding portion 182 covers a top surface and a sidewall of the semiconductor platform 100t and is separated from the first semiconductor layer 11 by a first insulating layer 17. In one embodiment, the first reflective surrounding portion 182 located on the top surface of the semiconductor platform 100t includes a first edge. The first edge has a distance w3 less than 10 μm from the sidewall of the semiconductor platform 100t. In one embodiment, w3 is less than 5 μm. In another embodiment, w3 is less than 3 μm.

[0096] In one embodiment of the invention, Figure 8 As shown, the surrounding portion 100e includes a first surrounding portion 1001e and a second surrounding portion 1002e, wherein the second surrounding portion 1002e includes a first semiconductor layer 11, a second semiconductor layer 12 and an active layer 13, and the second surrounding portion 1002e is separated from the semiconductor platform 100t by a distance through the first surrounding portion 1001e. The first reflective surrounding portion 182 includes a first portion covering an upper surface and a side wall of the semiconductor platform 100t and an upper surface of the first surrounding portion 1001e; and a second portion covering an upper surface and a side wall of the second surrounding portion 1002e. Figure 8 As shown, the first portion and the second portion of the first reflective surrounding portion 182 within the first surrounding portion 1001e can be connected to each other, or separated by a distance (not shown) via the second reflective structure 19. The first portion and / or the second portion can be isolated from the first semiconductor layer 11 by the first insulating layer 17.

[0097] In one embodiment, the thickness of the first reflective structure 18 is preferably 100 nm to 1 μm. If the thickness of the first reflective structure 18 is less than 100 nm, it cannot effectively reflect the light emitted by the active layer 13. Furthermore, if the thickness of the first reflective structure 18 is greater than 1 μm, excessive production time may result in manufacturing losses.

[0098] like Figure 2 、 Figure 3 and Figure 4 As shown, the light emitting element 1 includes a second reflective structure 19 covering the first insulating layer 17 and the first reflective structure 18. The second reflective structure 19 includes one or more second reflective structure first openings 191 located on the first contact electrode 16a and exposing the surface of the first contact electrode 16a. Figure 5 As shown, the second reflective structure 19 further includes one or more second reflective structure second openings 192 located on the second contact pad 161b, exposing the surface of the second contact pad 161b. The first reflective structure 18 is completely covered by the second reflective structure 19, thereby electrically insulating the first reflective structure 18 from the semiconductor platform 100t. Specifically, the first reflective extension 181 and / or the first reflective surround 182 of the first reflective structure 18 are completely covered by the first insulating layer 17 and the second reflective structure 19, preventing the first reflective extension 181 and the first reflective surround 182 from directly contacting the second contact electrode 16b and the second extension electrode 20b. As a result, the first reflective structure 18 is electrically insulating from the semiconductor platform 100t.

[0099] The position of the first opening 191 of the second reflective structure corresponds to the position of the first opening 171 of the first insulating layer, and the two are formed in a concentric circle shape. The position of the second opening 192 of the second reflective structure corresponds to the position of the second opening 172 of the first insulating layer, and the two are formed in a concentric circle shape. In one embodiment, the first opening 171 of the first insulating layer can be formed in a circular shape with a radius R11, and the first opening 191 of the second reflective structure can be formed in a circular shape with a radius R21, where R11 is greater than R21. The second opening 172 of the first insulating layer can be formed in a circular shape with a radius R12, and the second opening 192 of the second reflective structure can be formed in a circular shape with a radius R22, where R12 is greater than R22.

[0100] The second reflective structure 19 is formed of a non-conductive material, including an organic material, an inorganic material, or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

[0101] The second reflective structure 19 may comprise two or more materials with different refractive indices stacked alternately to form a Bragg reflector (DBR) structure, which selectively reflects light of a specific wavelength. For example, a high-reflectivity insulating reflective layer may be formed by stacking layers of SiO2 / TiO2 or SiO2 / Nb2O5.

[0102] When the wavelength of light emitted by the light emitting element 1 is λ, the thickness of the second reflective structure 19 can be set to an integer multiple of λ / 4. The thickness of the second reflective structure 19 can have a deviation of ±30% based on the integer multiple of λ / 4.

[0103] Although metals have good reflectivity for visible light, they tend to diffuse or undergo electron migration when exposed to electromagnetic fields, such as when an external current is injected into the light-emitting element 1. Furthermore, these metals are susceptible to oxidation in humid environments, resulting in a decrease in reflectivity over time, thereby reducing the efficiency of the light-emitting element 1. To avoid these issues, the first reflective structure 18 of the present invention is sandwiched between the first insulating layer 17 and the second reflective structure 19 comprising an insulating material. In other words, the first reflective extension 181 and the first reflective surround 182 of the first reflective structure 18 are electrically insulated from the semiconductor platform 100t. Because the second contact pad 161b is the direct injection area for external current, the first reflective extension 181 of the first reflective structure 18 avoids covering the upper surface of the second contact pad 161b. The first reflective extension 181 of the first reflective structure 18 is preferably located on the side of the second contact pad 161b and includes a first opening 180 to expose the upper surface of the second contact pad 161b. In order to prevent the metal of the first reflective extension portion 181 from generating electron migration, the second reflective structure 19 covers the upper surface and side surfaces of the first reflective extension portion 181, and the second reflective structure 19 includes a second opening 192 to expose the upper surface of the second contact pad 161b, wherein the first opening 180 includes a width greater than the width of the second opening 192.

[0104] The light-emitting element 1 includes one or more first extended electrodes 20a and one or more second extended electrodes 20b. The first extended electrodes 20a and the second extended electrodes 20b are arranged alternately. The first extended electrodes 20a cover the semiconductor platform 100t and the one or more first contact electrodes 16a and are in contact with the one or more first contact electrodes 16a. The second extended electrodes 20b cover the semiconductor platform 100t and the one or more second contact electrodes 16b and are in contact with the second contact pad 161b. The second extended electrodes 20b do not contact the second contact extension 162b. The first insulating layer 17 and the second reflective structure 19 are located between the second extended electrodes 20b and the second contact extension 162b.

[0105] The first extension electrode 20a and the second extension electrode 20b may comprise a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys thereof. The first extension electrode 20a and the second extension electrode 20b may be formed from a single layer or multiple layers. For example, the first extension electrode 20a or the second extension electrode 20b may comprise a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer.

[0106] In one embodiment, the light-emitting element 1 includes a top pin region 200 located at the geometric center of the light-emitting element 1, as viewed from above. The geometric center is defined as the point where at least two diagonal lines intersect and where the top pin region 200 reaches. In one embodiment, the top pin region 200 is separated from the first extension electrode 20a and / or the second extension electrode 20b by a distance. In one embodiment, the top pin region 200 may be connected to the first extension electrode 20a or the second extension electrode 20b. The top pin region 200 comprises the same metal material or metal stack as the first extension electrode 20a or the second extension electrode 20b.

[0107] The ejector pin region 200 protects the epitaxial layer from damage during back-end fabrication processes, such as die separation, die testing, and packaging, caused by external forces, such as probes or ejector pins. From a top view of the self-luminous element 1, the ejector pin region 200 can have a different shape than the first extended electrode 20a or the second extended electrode 20b. The ejector pin region 200 can be rectangular, elliptical, or circular.

[0108] The light-emitting device 1 includes a second insulating layer 21 covering the semiconductor platform 100t, the second reflective structure 19, the first extended electrode 20a, and the second extended electrode 20b. The second insulating layer 21 includes one or more second insulating layer first openings 211 located above the first extended electrode 20a, exposing a surface of the first extended electrode 20a. The second insulating layer 21 also includes one or more second insulating layer second openings 212 located above the second extended electrode 20b, exposing a surface of the second extended electrode 20b.

[0109] From a top view of the light-emitting element 1 , the plurality of second insulating layer first openings 211 are all located on a first side of the light-emitting element 1 , the plurality of second insulating layer second openings 212 are all located on a second side of the light-emitting element 1 , and the first side and the second side are located on opposite sides of the light-emitting element 1 .

[0110] From a top view of the self-luminous element 1, the formation positions of one or more second insulating layer first openings 211 are offset from the formation positions of the first contact electrodes 16a, and the formation positions of one or more second insulating layer second openings 212 are offset from the formation positions of the second contact electrodes 16b. Specifically, the second insulating layer first opening 211 is located between two adjacent first contact electrodes 16a, and the second insulating layer second opening 212 is located on either the left or right side of the second contact electrode 16b, or on one side thereof.

[0111] In one embodiment, when viewed from a top view or a side view of the light-emitting element 1, the second insulating layer first opening 211 includes a maximum width that is greater than or less than the maximum width of one of the through hole 100v, the first insulating layer first opening 171, and the second reflective structure first opening 191. The second insulating layer second opening 212 includes a maximum width that is greater than or less than the maximum width of one of the first insulating layer second opening 172 and the second reflective structure second opening 192.

[0112] In one embodiment, the second insulating layer first opening 211 is located between two adjacent through holes 100 v and / or between two adjacent second contact electrodes 16 b.

[0113] In one embodiment, the number of the plurality of second insulating layer first openings 211 is different from the number of the plurality of second insulating layer second openings 212. In one embodiment, the number of the second insulating layer second openings 212 is greater than the number of the second insulating layer first openings 211. In one embodiment, the number of the second insulating layer second openings 212 is less than the number of the second insulating layer first openings 211.

[0114] The second insulating layer 21 is formed of a non-conductive material, including an organic material, an inorganic material or a dielectric material. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cycloolefin polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

[0115] Light-emitting element 1 includes a first electrode pad 22a that covers one or more first openings 211 in the second insulating layer and contacts the first extended electrode 20a. Light-emitting element 1 includes a second electrode pad 22b that covers one or more second openings 212 in the second insulating layer and contacts the second extended electrode 20b. The first electrode pad 22a and the second electrode pad 22b are electrically connected to the first contact electrode 16a and the second contact electrode 16b through the first extended electrode 20a and the second extended electrode 20b, respectively.

[0116] The upper surface of the first electrode pad 22a or the second electrode pad 22b may be non-planar. Specifically, the upper surface of the first electrode pad 22a or the second electrode pad 22b has a surface profile corresponding to the surface profiles of the upper surface of the first contact electrode 16a and the upper surface of the second contact electrode 16b. In other words, the first electrode pad 22a or the second electrode pad 22b is disposed on the first contact electrode 16a and the second contact electrode 16b, wherein the first contact electrode 16a and the second contact electrode 16b have a non-planar surface profile and thus have an elongated, circular, or stepped surface. Figure 1 As shown, the upper surface of the first electrode pad 22a or the second electrode pad 22b may include at least one recessed portion and at least one protruding portion, which are respectively disposed in the region where the first contact electrode 16a and the second contact electrode 16b are disposed. Therefore, the upper surface of the first electrode pad 22a or the second electrode pad 22b may have a stepped surface. The recessed portion may be formed as Figure 1 The circular shape shown, the protrusion can be formed as Figure 1 The outer edge of the concave portion of the first electrode pad 22a or the concave portion of the second electrode pad 22b and the edge of the first contact electrode 16a may be formed in a concentric circle shape.

[0117] The first electrode pad 22a and the second electrode pad 22b include a metal material, such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys thereof. The first electrode pad 22a and the second electrode pad 22b may be composed of a single layer or multiple layers. For example, the first electrode pad 22a or the second electrode pad 22b may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer. The first electrode pad 22a and the second electrode pad 22b may serve as a current path for an external power source to supply power to the first semiconductor layer 11 and the second semiconductor layer 12.

[0118] In one embodiment of the present invention, the first electrode pad 22a has a dimension that is the same as or different from a dimension of the second electrode pad 22b. This dimension can be width or area. For example, the top visible area of ​​the first electrode pad 22a or the second electrode pad 22b can be greater than or equal to 0.8 times and less than 1 times the sum of the top visible areas of the first electrode pad 22a and the second electrode pad 22b.

[0119] The first electrode pad 22a or the second electrode pad 22b each includes an inclined side surface, so that the side-view cross-sectional area of ​​the first electrode pad 22a or the second electrode pad 22b can vary along the thickness direction. For example, the side-view cross-sectional area of ​​the first electrode pad 22a or the second electrode pad 22b can gradually decrease as it moves away from the top surface of the semiconductor stack 100.

[0120] The first electrode pad 22a and the second electrode pad 22b are spaced apart, with the minimum distance between the first and second electrode pads being approximately 10 μm or greater and the maximum distance being approximately 250 μm or less. Within this range, by reducing the distance between the first and second electrode pads 22a, 22b, the top surface area of ​​the first and second electrode pads 22a, 22b can be increased, thereby improving the heat dissipation efficiency of the light-emitting element 1 and preventing short circuits between the first and second electrode pads 22a, 22b.

[0121] The first electrode pad 22 a and the second electrode pad 22 b have a thickness ranging from 1 to 100 μm, preferably from 1.5 to 6 μm.

[0122] In one embodiment of the present invention, the first extended electrode 20a includes a first contact portion 201a positioned below the first electrode pad 22a and a first extended portion 202a positioned below the second electrode pad 22b, wherein the first contact portion 201a has a width greater than that of the first extended portion 202a. The second extended electrode 20b includes a second contact portion 201b positioned below the second electrode pad 22b and a second extended portion 202b positioned below the first electrode pad 22a, wherein the second contact portion 201b has a width greater than that of the second extended portion 202b.

[0123] In one embodiment of the present invention, the first contact electrode 16a has a width of at least 8 μm, preferably at least 15 μm, and more preferably at least 20 μm. The first contact portion 201a of the first extension electrode 20a has a width of at least 15 μm, preferably at least 20 μm, and more preferably at least 25 μm. The first extension portion 202a of the first extension electrode 20a has a width of at least 1 μm, preferably at least 2 μm, and more preferably at least 4 μm.

[0124] In one embodiment of the present invention, the second contact electrode 16b has a width of at least 1 μm, preferably at least 2 μm, and more preferably at least 4 μm. The second contact portion 201b of the second extension electrode 20b has a width of at least 15 μm, preferably at least 20 μm, and more preferably at least 25 μm. The second extension portion 202b of the second extension electrode 20b has a width of at least 1 μm, preferably at least 2 μm, and more preferably at least 4 μm.

[0125] Figure 9This is a schematic diagram of a light-emitting device 2 according to one embodiment of the present invention. The light-emitting element 1 of the aforementioned embodiment is flip-chip mounted on a first pad 511 and a second pad 512 of a packaging substrate 51. The first pad 511 and the second pad 512 are electrically insulated by an insulating portion 53 composed of insulating material. Flip-chip mounting uses the side of the growth substrate opposite the electrode pad surface as the primary light extraction surface. To increase the light extraction efficiency of the light-emitting device 2, a reflective structure 54 may be provided around the light-emitting element 1.

[0126] Figure 10 FIG3 is a schematic diagram of a light-emitting device 3 according to an embodiment of the present invention. The light-emitting device 3 is a bulb lamp comprising a lampshade 602, a reflector 604, a light-emitting module 610, a lamp holder 612, a heat sink 614, a connecting portion 616, and an electrical connection element 618. The light-emitting module 610 includes a carrier 606 and a plurality of light-emitting units 608 disposed thereon. The light-emitting units 608 may be the light-emitting elements 1 or the light-emitting device 2 described in the aforementioned embodiments.

[0127] The embodiments listed in the present invention are only used to illustrate the present invention and are not used to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention do not depart from the spirit and scope of the present invention.

Claims

1. A light-emitting element, characterized in that: Include: A semiconductor platform having a first semiconductor layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; a first contact electrode, located on the first semiconductor layer; a second contact electrode, located on the second semiconductor layer; A first insulating layer comprising a second opening in the first insulating layer located on the second semiconductor layer and exposing the second contact electrode, A first reflective structure, covering the first insulating layer, comprising a metal material, and located on the semiconductor platform; as well as A second reflective structure, covering the first insulating layer, includes a Bragg reflector (DBR) structure and a second opening corresponding to the position of the second opening of the first insulating layer, and is formed in a concentric circle shape with each other, wherein the second contact electrode includes a second contact extension, and wherein the first reflective structure includes a first reflective extension, the first reflective extension is located on the second semiconductor layer, and the first reflective extension includes a width greater than the width of the second contact extension. 2 . The light-emitting device as claimed in claim 1 , wherein the first reflective structure is electrically insulated from the semiconductor platform.

3. The light-emitting element as described in claim 1 comprises a second extended electrode covering the second opening of the second reflective structure; the second insulating layer comprises one or more second insulating layer second openings located on the second extended electrode; and a second electrode pad covering the one or more second insulating layer second openings.

4. The light emitting element as claimed in claim 1, wherein the first insulating layer comprises aluminum oxide (Al2O3), silicon nitride (SiN x ), silicon oxide (SiO x ), titanium oxide (TiO x ), or magnesium fluoride (MgF x ).

5. The light-emitting element as described in claim 1 comprises a through hole exposing the surface of the first semiconductor layer and being surrounded by the second semiconductor layer and the active layer, wherein the first insulating layer comprises a first insulating layer first opening located on the first semiconductor layer and exposing the first contact electrode. 6 . The light emitting element as claimed in claim 5 , wherein the second reflective structure comprises a first opening corresponding to a position of the first opening of the first insulating layer, and the second reflective structure is formed in a concentric circle shape.

7. The light-emitting element as described in claim 1 comprises a surrounding portion located around the semiconductor platform; and a groove located between the surrounding portion and the semiconductor platform, wherein the first reflective structure comprises a first reflective surrounding portion covering the upper surface and sidewalls of the surrounding portion. 8 . The light emitting device as claimed in claim 1 , comprising a surrounding portion to expose the first semiconductor layer, wherein the first reflective structure comprises a first reflective surrounding portion covering the upper surface and sidewalls of the semiconductor platform. 9 . The light-emitting element as claimed in claim 1 , wherein the first reflective structure comprises silver (Ag), aluminum (Al), gold (Au), palladium (Pd), or rhodium (Rh), or an alloy thereof. 10 . The light emitting element as claimed in claim 9 , wherein a thickness of the first reflective structure is 100 nm to 1 μm.

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