Focused charged particle beam device

Abstract

Provided is a focused charged particle beam device including: a support portion that supports a processed substrate; and a focused energy beam columnar body that includes a differential exhaust device and is capable of relative movement in correspondence with an arbitrary region of a processed surface of the processed substrate, wherein the support portion supports only a peripheral portion of the processed substrate in a state in which the processed substrate is horizontally disposed, a positive pressure chamber is disposed below the processed substrate supported by the support portion, the positive pressure chamber applies positive pressure throughout the entirety of a processed region of the processed substrate, prevents deflection of the processed substrate due to gravity, includes a local negative pressure mechanism within the positive pressure chamber, the local negative pressure mechanism applies negative pressure while maintaining a state in which the local negative pressure mechanism does not contact a lower surface of the processed substrate, counteracts suction force of the differential exhaust device, maintains a state in which the local negative pressure mechanism opposes the differential exhaust device across the processed substrate, and is capable of relative movement with respect to the processed substrate in following the differential exhaust device.

Description

Technical Field

[0001] This invention relates to a focused charged particle beam device equipped with a differential exhaust device. Background Technology

[0002] In recent years, processing apparatuses utilizing focused ion beams have been proposed for processing tasks such as pattern correction in photomasks used in the manufacture of flat panel displays (FPDs) such as liquid crystal displays (LCDs) and organic EL displays, and wiring correction in wiring substrates of FPDs or semiconductor devices (see, for example, Patent Document 1). This processing apparatus includes a platform-shaped support for holding the photomask or wiring substrate to be processed and a focused ion beam apparatus with a local venting device. In this processing apparatus, a local vacuum space is created by the local venting device, and the pattern and wiring correction are performed within this vacuum space using a focused ion beam. Using such a processing apparatus eliminates the need for a large vacuum chamber to house the photomask or wiring substrate, the focused ion beam apparatus, etc.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-112958 Summary of the Invention

[0006] The problem to be solved by the present invention

[0007] However, in the aforementioned processing apparatus, the substrates to be processed, such as photomasks or wiring substrates, are directly stacked on the support stage. Therefore, problems arise such as foreign matter adhering to the lower surface of the substrate from the support stage side, or damage to the lower surface of the substrate on the support stage. In particular, since the photomask is the original component used to transfer circuit patterns to the object being transferred, defects will occur during FPD manufacturing (photolithography process) if foreign matter adheres to the lower surface or if the lower surface is damaged.

[0008] The present invention was made in view of the above-mentioned problems, and its object is to provide a focused charged particle beam device that does not allow foreign matter to adhere to the lower surface of the substrate being processed and does not cause damage to the lower surface of the substrate being processed.

[0009] Solution for solving the problem

[0010] To address the aforementioned issues and achieve the objective, the present invention relates to a focused charged particle beam apparatus comprising: a support portion supporting a substrate to be processed; and a focused energy beam column having a differential exhaust device capable of relative movement corresponding to any region of the processed surface of the substrate. The support portion supports only the periphery of the substrate when it is horizontally positioned. A positive pressure chamber is disposed below the substrate supported by the support portion, applying positive pressure throughout the processed area of ​​the substrate to prevent deflection of the substrate due to its own weight. A local negative pressure mechanism is provided within the positive pressure chamber, applying negative pressure while maintaining a state of non-contact with the lower surface of the substrate to counteract the attractive force of the differential exhaust device. The local negative pressure mechanism is maintained opposite to the differential exhaust device across the substrate and is capable of relative movement relative to the substrate following the differential exhaust device.

[0011] As a preferred embodiment of the above solution, a first floating pad for spraying gas onto the surface to be treated is provided around the outside of the differential exhaust device, and a second floating pad for spraying gas onto the lower surface of the substrate to be treated is provided around the outside of the local negative pressure mechanism.

[0012] As a preferred embodiment of the above solution, the differential exhaust device includes a head facing the surface to be processed of the substrate being processed. An air intake portion is provided on the opposing surface of the head, surrounding the center portion of the opposing surface. An opening forming a processing space is provided in the center portion of the head, in which the surface to be processed can be processed. A vacuum pump is connected to the air intake portion. When the opposing surface is facing the surface to be processed, the processing space is set to a high vacuum by the air intake action from the air intake portion.

[0013] As a preferred embodiment of the above-mentioned solution, the focused energy beam column includes a lens barrel disposed on the side opposite to the opposing surface in the head, and connected to the opening to communicate with the processing space. A focused energy beam system is built into the lens barrel to emit the focused energy beam through the opening.

[0014] As a preferred embodiment of the above scheme, the focusing energy beam system is a focusing ion beam system that emits a focused ion beam.

[0015] As a preferred embodiment of the above solution, a film-forming gas supply section is provided on the opposing surface at a position closer to the center than the air intake section.

[0016] Invention Effects

[0017] According to the present invention, a focused charged particle beam device is available that does not allow foreign matter to adhere to the lower surface of the substrate being processed and does not cause damage to the lower surface of the substrate being processed. Attached Figure Description

[0018] Figure 1 This is a cross-sectional view illustrating the focused ion beam apparatus according to the first embodiment of the present invention.

[0019] Figure 2 This is a top view illustration of the focused ion beam apparatus according to the first embodiment of the present invention.

[0020] Figure 3 This is a bottom view of the differential exhaust device in the focused ion beam apparatus according to the first embodiment of the present invention.

[0021] Figure 4 This is a cross-sectional view illustrating the focused ion beam apparatus according to the second embodiment of the present invention.

[0022] Figure 5 This is a top view of a focused ion beam column having a differential exhaust device and a first levitation pad in a focused ion beam apparatus according to a second embodiment of the present invention.

[0023] Figure 6 This is a top view of the local negative pressure mechanism with a second levitation pad in the focused ion beam apparatus of the second embodiment of the present invention.

[0024] Figure 7 Comparative Example 1 is shown as a cross-sectional explanatory diagram illustrating an example in which the support portion only holds the peripheral portion of the substrate being processed.

[0025] Figure 8 Comparative Example 2 is shown as a cross-sectional illustration of an example having a positive pressure chamber beneath the substrate being processed.

[0026] Figure 9 Comparative Example 2 is shown as a cross-sectional illustration of an example in which a positive pressure chamber is provided below the substrate being processed, but no local negative pressure mechanism is provided in the positive pressure chamber. Detailed Implementation

[0027] Depending on the type of energy beam emitted and the purpose of processing the substrate being processed, the focused charged particle beam apparatus of the present invention can be applied to a focused ion beam apparatus as a repair device, an electron beam exposure apparatus having the function of directly exposing the substrate being processed, a scanning electron microscope capable of observing the surface condition of the substrate being processed, etc.

[0028] Hereinafter, a detailed description of a focused charged particle beam apparatus according to an embodiment of the present invention will be provided with reference to the accompanying drawings. This embodiment applies the focused charged particle beam apparatus of the present invention to a focused ion beam apparatus that uses a focused ion beam as the energy beam. Furthermore, it should be noted that the drawings are schematic, and the dimensions, proportions, or values ​​of the components, shapes, etc., differ from the actual dimensions. Additionally, the drawings also include portions where the dimensional relationships, proportions, and shapes differ from each other.

[0029] [First Embodiment] (Brief Structure of a Focused Ion Beam Device)

[0030] Figure 1 A simplified structure of the focused ion beam apparatus 1A according to the first embodiment is shown.

[0031] The focused ion beam apparatus 1A includes a differential exhaust device 2, a focused ion beam column (hereinafter also referred to as a FIB column) 3, a support 4, a positive pressure chamber 5, and a local negative pressure mechanism 6.

[0032] (Support section)

[0033] like Figure 1 As shown, the support portion 4 supports the substrate 10 being processed while the peripheral portion of the substrate 10 being processed is placed on it. Figure 2 As shown, the support portion 4 is formed in a frame shape. It should be noted that the support portion 4 includes a chuck mechanism (not shown) that supports the periphery of the substrate 10 to be processed. In this embodiment, a large photomask is used as the substrate 10 to be processed. In this embodiment, the position of the support portion 4 is fixed.

[0034] (Differential exhaust system)

[0035] Next, use Figure 1 and Figure 3 To illustrate the structure of the differential exhaust device 2. Figure 3 This is a bottom view of the differential exhaust device 2. The differential exhaust device 2 has a head 20.

[0036] The head 20 is made of a disk-shaped metal plate with an area extremely small compared to the area of ​​the substrate 10 being processed. The head 20 can be positioned opposite any region of the substrate 10 being processed by moving in the X-Y direction.

[0037] like Figure 3As shown, four concentric annular grooves 21, 22, 23, and 24 are formed on the opposing surface (lower surface) of the head 20. An opening 20A is provided inside the innermost annular groove 21 of these annular grooves 21, 22, 23, and 24 of the head 20 to form a processing space, in which the upper surface (processed surface) of the substrate 10 can be processed (focused ion beam irradiation). The FIB columnar body 3, described later, is connected to this opening 20A in a communicating manner. It should be noted that, in this description, the groove formed around the center of the head 20 is referred to as an "annular groove," which includes circular annular grooves, square annular grooves, and also includes grooves that are partially missing from the ring, such as C-shaped grooves, and multiple grooves arranged intermittently in annular patterns.

[0038] like Figure 1 As shown, the innermost annular groove 21 constitutes a film-forming gas supply section, which is connected to a deposition gas supply source (not shown) that supplies deposition gas (deposition gas, CVD gas) via a connecting pipe 25. Annular grooves 22, 23, and 24 function as suction sections and are connected to a vacuum pump (not shown) via a connecting pipe 26. The head 20 has the following function: when its lower surface faces the upper surface (processed surface) of the substrate 10, it utilizes the air suction from the annular grooves 22, 23, and 24 to create a high vacuum in the space below the opening 20A. It should be noted that the annular grooves 22, 23, and 24 can also be connected to different vacuum pumps without using the connecting pipe 26.

[0039] The head 20 supplies deposition gas from the innermost annular groove 21 to the space below the opening 20A, which is adjusted to a high vacuum, thereby enabling CVD film deposition in the area of ​​the substrate 10 to be processed opposite the opening 20A.

[0040] (Focused Ion Beam Column: FIB Column)

[0041] The FIB column 3 is disposed on the side (upper surface side) opposite to the surface of the substrate 10 being processed in the head 20, and the FIB column 3 is connected to the head 20 in a state in which the front end of the FIB column 3 is embedded in the opening 20A of the head 20.

[0042] The FIB column 3 includes a lens barrel 31 communicating with the opening 20A of the head 20 and a focused ion beam optical system 32 built into the lens barrel 31. A vacuum pump (not shown) is connected to the upper part of the lens barrel 31 via a connecting tube 33. The ion beam Ib can be emitted from the front end of the FIB column 3 toward the substrate 10 to be processed, passing through the opening 20A.

[0043] The focused ion beam optical system 32 includes an ion source for generating an ion beam Ib, a condenser lens for focusing the generated ion beam Ib, a deflector for scanning the ion beam Ib, and an electrostatic lens for focusing the ion beam Ib.

[0044] W(CO)6 can be used as the deposition gas for CVD. When a focused ion beam is irradiated onto W(CO)6 near the substrate, it decomposes into W and CO, with W deposited on the substrate.

[0045] A lifting mechanism (not shown) is provided at the upper end of the FIB column 3. It should be noted that this lifting mechanism is connected to an X-Y gantry (not shown). Therefore, the FIB column 3 and the differential exhaust device 2 can perform lifting movements based on the lifting mechanism and movement in the X-Y direction based on the X-Y gantry. Thus, in this embodiment, the differential exhaust device 2 and the FIB column 3 can move relative to the substrate 10 being processed, which is supported by the support portion 4. It should be noted that in this embodiment, the differential exhaust device 2 and the FIB column 3 are arranged to move, but it could also be arranged such that the positions of the differential exhaust device 2 and the FIB column 3 are fixed while the substrate 10 is moved.

[0046] (Positive pressure chamber)

[0047] like Figure 1 and Figure 2 As shown, the positive pressure chamber 5 has a rectangular container shape with an opening at the top. In this embodiment, an air inlet 5A is provided at the bottom of the positive pressure chamber 5. The positive pressure chamber 5 is configured to maintain positive pressure by introducing air through the air inlet 5A via a jet pump (not shown). The upper edge of the positive pressure chamber 5 is arranged along the inner side of the support portion 4. Therefore, the upper surface of the opening of the positive pressure chamber 5 is configured to apply positive pressure to approximately the entire lower surface of the substrate 10, except for the periphery of the substrate 10 being processed. It should be noted that in this embodiment, the pressure inside the positive pressure chamber 5 is set to prevent the substrate 10 being processed from deflecting due to its own weight and to maintain a flat state.

[0048] (Local negative pressure mechanism)

[0049] like Figure 1 As shown, the local negative pressure mechanism 6 is disposed within the positive pressure chamber 5 in a manner that allows it to move freely in the X-Y direction. The local negative pressure mechanism 6 is formed into a disc shape having a diameter equal to that of the head 20 in the differential exhaust device 2 described above. Multiple air intakes (see reference 1) are evenly arranged on the upper surface of the local negative pressure mechanism 6. Figure 6The suction port 6A of the local negative pressure mechanism 6 in the second embodiment shown. A flexible pipe (not shown) is connected to the local negative pressure mechanism 6, through which vacuum can be evacuated. The attraction force of the upper surface of the local negative pressure mechanism 6 on the substrate 10 to be processed is set to be equal to the attraction force on the substrate 10 to be processed generated by the attraction from the differential exhaust device 2 and the FIB column 3 side. That is, the attraction force of the local negative pressure mechanism 6 on the substrate 10 to be processed is set to counteract the attraction force on the substrate 10 to be processed from the differential exhaust device 2 side.

[0050] A moving mechanism (not shown) is provided within the positive pressure chamber 5, enabling the local negative pressure mechanism 6 to move freely in the X-Y direction. Furthermore, the local negative pressure mechanism 6 is configured to follow the movement of the differential exhaust device 2 and the FIB columnar body 3, maintaining a position opposite to the differential exhaust device 2 across the substrate being processed 10. It should be noted that, in this embodiment, a lifting mechanism (not shown) is provided, enabling the local negative pressure mechanism 6 to move vertically for alignment.

[0051] (The function and operation of the focused ion beam device in the first embodiment)

[0052] The operation and function of the focused ion beam apparatus 1A according to this embodiment will now be described. First, the substrate 10 to be processed is transported and aligned such that the support portion 4 is located at the periphery of the substrate 10. At this time, air is introduced into the positive pressure chamber 5 from the air inlet path 5A, and the air introduction state into the positive pressure chamber 5 is set appropriately so that the substrate 10 to be processed can remain horizontal without bending when it is placed at the upper edge of the positive pressure chamber 5. Then, the substrate 10 to be processed is placed on the support portion 4, and the support portion 4 supports the periphery of the substrate 10.

[0053] The differential exhaust device 2 and the FIB column 3 are moved so that they are opposite the area to be processed in the substrate 10. At this time, the local negative pressure mechanism 6 is moved by a moving mechanism (not shown) so that the upper surface of the local negative pressure mechanism 6 is opposite the differential exhaust device 2 and the FIB column 3 across the substrate 10.

[0054] Then, the differential exhaust device 2 and the FIB column 3 are moved to a suitable distance from the substrate 10 being processed. Simultaneously, the local negative pressure mechanism 6 is raised to a suitable distance from the substrate 10 being processed via a lifting mechanism (not shown). At this point, neither the differential exhaust device 2 and the FIB column 3 nor the local negative pressure mechanism 6 are in contact with the substrate 10 being processed.

[0055] Next, the attraction from the differential exhaust device 2 and the FIB column 3 side and the attraction from the local negative pressure mechanism 6 side are performed simultaneously to the same degree or to suppress the bending of the substrate 10 to the top or bottom caused by the attraction from the differential exhaust device 2 and the local negative pressure mechanism 6, thereby preventing the substrate 10 to be bent to the top or bottom.

[0056] Furthermore, the ion beam Ib is irradiated from the FIB column 3 to perform surface observation and surface pattern correction on the area of ​​the substrate 10 opposite to the FIB column 3.

[0057] When the above process is completed, the differential exhaust device 2 and the FIB column 3 are raised by a lifting mechanism (not shown) and moved away from the processed substrate 10 by a predetermined distance. At the same time, the local negative pressure mechanism 6 is lowered by a lifting mechanism (not shown) and also moved away from the processed substrate 10 by a predetermined distance.

[0058] Next, the differential exhaust device 2 and the FIB column 3 are moved to the next area to be processed via an X-Y gantry (not shown). Simultaneously, the local negative pressure mechanism 6 is moved to follow the differential exhaust device 2 and the FIB column 3 to a position opposite them. Then, by repeating the same process as described above, the entire area of ​​the substrate 10 to be processed, except for the peripheral portion, can be subjected to the same processing as described above.

[0059] The processed substrate 10, having undergone such correction, is retrieved via a transport mechanism (not shown) in a state where only the peripheral portion is supported.

[0060] (Comparative Example 1)

[0061] Here, using Figure 7 To illustrate, we will describe Comparative Example 1, which is different from the first embodiment described above. For example... Figure 7 As shown, if the substrate 10 to be processed is simply placed on the support portion 4, the substrate 10 to be processed will flex significantly due to its own weight. In semiconductor devices, such as FPDs with relatively small display surfaces, there are cases where flexing can be disregarded. However, in recent years, with the increasing size of FPDs, photomasks have also become larger, sometimes having dimensions of several meters in both length and width, making it impossible to ignore the problem of flexing.

[0062] (Comparative Example 2)

[0063] Figure 8 and Figure 9 Comparative Example 2 is shown. In this Comparative Example 2, the support portion 4 and the positive pressure chamber 5 are the same as those in the first embodiment described above. Figure 8 Under the action of the positive pressure chamber 5, the substrate 10 being processed is kept horizontal, thus maintaining its flatness. In this state, as... Figure 9 As shown, when the differential exhaust device 2 and FIB column 3 are used for processing (observation, correction, etc.), the substrate 10 being processed becomes partially bulging due to the attraction force from the differential exhaust device 2 and FIB column 3.

[0064] (Effects of the first implementation method)

[0065] As described above, the focused ion beam apparatus 1A according to the first embodiment can avoid placing the substrate 10 to be processed on a platform-shaped stand. Therefore, it can prevent foreign objects such as particles from adhering to the lower surface of the effective area of ​​the substrate 10 to be processed, except for the peripheral portion, or prevent the lower surface of the substrate 10 to be processed from being damaged by the platform or the like.

[0066] [Second Implementation]

[0067] use Figures 4-6 The focused ion beam apparatus 1B of the second embodiment of the present invention will be described below. Figure 4 and Figure 5 As shown, in this focused ion beam apparatus 1B, a first floating pad 7 is integrally disposed around the differential exhaust device 2. The first floating pad 7 is connected to an ejection pump supplying nitrogen (N2) as an inactive gas via a connecting pipe (not shown). The first floating pad 7 is a flat, annular tube shape with multiple slit-like or circular openings formed on its lower surface, through which the inactive gas can be ejected. The inactive gas ejected from the first floating pad 7 exerts force on the upper surface of the substrate 10 being treated.

[0068] like Figure 4 and Figure 6 As shown, in the focused ion beam apparatus 1B of this embodiment, a second buoyancy pad 8 is integrally disposed around the local negative pressure mechanism 6, surrounding it. This second buoyancy pad 8 is connected to an air supply pump (not shown) via a connecting pipe (not shown). The second buoyancy pad 8 is also formed into a flat, annular tube shape, the same size as the first buoyancy pad 7. Figure 6 As shown, an exhaust port 8A, identical to the intake port 6A formed on the upper surface of the second floating pad 8, is formed on the upper surface of the local negative pressure mechanism 6. Air blown out from this exhaust port 8A exerts force on the lower surface of the substrate 10 being processed. The other structures of the focused ion beam apparatus 1B in this embodiment are substantially the same as those of the focused ion beam apparatus 1A in the first embodiment described above.

[0069] The first levitation pad 7 sprays an inert gas toward the upper surface of the substrate 10 to form an air curtain. Therefore, the first levitation pad 7 exerts force on the differential exhaust device 2 and the FIB column 3 in the direction away from the substrate 10. Furthermore, by using the inert gas, the interior of the lens barrel 31 can be purified, thereby improving the environment. Additionally, the first levitation pad 7 has the effect of levitizing the differential exhaust device 2 and the FIB column 3 by spraying the inert gas in the direction away from the substrate 10. Therefore, in this embodiment, it has the effect of counteracting the vacuum pressure generated by the differential exhaust.

[0070] In particular, the first floating pad 7 serves to prevent the differential exhaust device 2 and the FIB column 3 from contacting the substrate 10 being processed. Similarly, the second floating pad 8 uses the ejected air to prevent the local negative pressure mechanism 6 and the second floating pad 8 from contacting the substrate 10 being processed. In the first floating pad 7 and the second floating pad 8 described above, since gas is ejected onto the substrate 10 being processed, even if such gas ejection is prevented at the substrate 10 being processed, the repulsive force becomes very large. Therefore, by providing the first floating pad 7 and the second floating pad 8 described above, the ability to prevent the differential exhaust device 2 and the FIB column 3, and the local negative pressure mechanism 6 from contacting the substrate 10 being processed can be improved.

[0071] [Other implementation methods]

[0072] The first and second embodiments of the present invention have been described above, but it should not be understood that the discussion and drawings that constitute a part of the disclosure of these embodiments limit the present invention. Those skilled in the art will be able to understand various alternative embodiments, examples, and application techniques based on this disclosure.

[0073] For example, the focused ion beam devices 1A and 1B of the above embodiments use focused ion beams as energy beams, but the present invention can of course also be applied to laser CVD using lasers as energy beams or repair devices for laser etching, etc.

[0074] The examples of the focused ion beam apparatus 1A and 1B described above being applicable as repair apparatuses have been explained. However, in addition to these, they can also be applied to electron beam exposure apparatuses that have the function of directly exposing the substrate to be processed, scanning electron microscopes that can observe the surface condition of the substrate to be processed, etc.

[0075] In the focused ion beam devices 1A and 1B described above, a disc-shaped metal plate is used as the head 20, but it is not limited to any structure that can realize the differential exhaust function.

[0076] In the focused ion beam apparatuses 1A and 1B of the above embodiments, the positions of the support 4 and the positive pressure chamber 5 are fixed, but conversely, they can also be configured to allow the support 4 and the positive pressure chamber 5 to move relative to the substrate 10 being processed.

[0077] In the focused ion beam apparatuses 1A and 1B of the above embodiments, the number of annular grooves formed in the differential exhaust device 2 is not limited to four. As long as there are at least two or more annular grooves for exhaust and blowing, it is also possible to configure a structure in which multiple openings are evenly arranged without annular grooves.

[0078] Symbol Explanation

[0079] 1A, 1B Focused Ion Beam Units

[0080] 2 Differential exhaust system

[0081] 3. Focused Ion Beam Column (FIB)

[0082] 4 Support section

[0083] 5 Positive pressure chamber

[0084] 5A Air Inlet Path

[0085] 6. Local negative pressure mechanism

[0086] 6A Intake Port

[0087] 7 First buoyancy pad

[0088] 8 Second floating pad

[0089] 8A Exhaust Port

[0090] 10. Substrate to be processed

[0091] 20 heads

[0092] 20A Opening

[0093] 21, 22, 23, 24 Annular grooves (intake section)

[0094] 25, 26 connecting pipes

[0095] 31 Lens tube

[0096] 32 Focused Ion Beam Optical System

[0097] 33 Connecting pipe

Claims

1. A device for focusing charged particle beams, characterized in that, have: Support portion, which supports the substrate being processed; and A focused energy beam column is provided, which has a differential exhaust device and is capable of relative movement in a manner corresponding to any region of the surface to be processed on the substrate being processed. The support portion supports only the peripheral portion of the substrate being processed when the substrate is arranged horizontally. A positive pressure chamber is disposed below the substrate to be processed, which is supported by the support portion. The positive pressure chamber applies positive pressure to the entire processed area of ​​the substrate to prevent the substrate from deflecting due to its own weight. The positive pressure chamber includes a local negative pressure mechanism that applies negative pressure while maintaining a state of non-contact with the lower surface of the substrate being processed to counteract the attractive force of the differential exhaust device. The local negative pressure mechanism remains positioned opposite the differential exhaust device, separated from the substrate being processed, and is capable of moving relative to the substrate being processed in accordance with the differential exhaust device. A first floating pad is provided around the outside of the differential exhaust device to spray gas onto the surface being treated. A second buoyancy pad is provided around the outside of the local negative pressure mechanism to spray gas onto the lower surface of the substrate being processed.

2. The focusing charged particle beam device according to claim 1, wherein, The differential exhaust device has a head facing the surface to be processed on the substrate being processed. An air intake portion is provided on the opposing surface of the head that faces the surface being processed, surrounding the center of the opposing surface. The head has an opening at its center to form a processing space, in which the surface to be processed can be processed. A vacuum pump is connected to the suction section. When the opposing surface is facing the surface to be processed, the processing space is set to a high vacuum by the suction effect from the suction section.

3. The focusing charged particle beam device according to claim 2, wherein, The focused energy beam column has a lens barrel disposed on the side opposite to the opposing surface in the head and connected to the opening so as to communicate with the processing space. A focused energy beam system is built into the lens barrel to emit a focused energy beam through the opening.

4. The focusing charged particle beam device according to claim 3, wherein, A focused energy beam system is a focused ion beam system that emits a focused ion beam.

5. The focusing charged particle beam device according to claim 2, wherein, A film-forming gas supply section is provided on the opposing surface at a position closer to the center than the air intake section, for supplying film-forming gas.

6. The focusing charged particle beam device according to claim 3, wherein, A film-forming gas supply section is provided on the opposing surface at a position closer to the center than the air intake section, for supplying film-forming gas.

7. The focusing charged particle beam device according to claim 4, wherein, A film-forming gas supply section is provided on the opposing surface at a position closer to the center than the air intake section, for supplying film-forming gas.

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