Cleaning a reticle for an etching apparatus and a method of cleaning an etching apparatus

Abstract

The application provides a mask plate for cleaning an etching device and a cleaning method of the etching device. The mask plate comprises a substrate and a light shielding layer, wherein the light shielding layer is arranged on the surface of the substrate, and a plurality of opening patterns are arranged in the light shielding layer, and the shape boundary of the orthographic projection of the opening patterns on the substrate has a plurality of protrusions. The shape boundary of the orthographic projection of the opening patterns on the mask plate for cleaning the etching device on the substrate has a plurality of protrusions, the protrusions can enhance the electrostatic adsorption effect, so that the particles in the reaction cavity of the etching device can be easily adsorbed on the surface of the mask plate in the subsequent plasma cleaning operation, and then the particles adsorbed on the surface of the mask plate are removed through the plasma cleaning program, so that the reaction cavity of the etching device can be cleaned without opening the cavity, and the problem that the reaction cavity of the etching device is cleaned for too long in the prior art is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular, to a mask plate for cleaning an etching device and a cleaning method of the etching device. BACKGROUND

[0002] In a dry etching process, photoresist and chromium layer are easily etched to produce by-products, which are adsorbed or suspended in the cavity to form secondary pollution and cause product defects. If the device is stopped and manually cleaned by professional technicians, the internal components and the inner wall of the cavity will be cleaned, which will cause the device to stop, consume a lot of time, and affect the product circulation of the factory.

[0003] The above information disclosed in the background section is only used to enhance the understanding of the background of the technology described herein, and therefore, the background section can include some information that is not considered to be prior art known in the country by those skilled in the art. SUMMARY

[0004] The main purpose of the present application is to provide a mask plate for cleaning an etching device and a cleaning method of the etching device, so as to solve the problem of long cleaning time of the reaction cavity of the etching device in the prior art.

[0005] In order to achieve the above-mentioned purpose or other purposes, according to one aspect of the present application, a mask plate for cleaning an etching device is provided, comprising a substrate and a light shielding layer, wherein the light shielding layer is located on the surface of the substrate, a plurality of opening patterns are provided in the light shielding layer, and the shape boundary of the orthographic projection of the opening pattern on the substrate has a plurality of protrusions.

[0006] Further, the protrusions at least include sharp corner protrusions or circular arc protrusions.

[0007] Further, the bottom exposed part of the opening pattern exposes the substrate, and at least part of the opening patterns have the same shape.

[0008] Further, the opening patterns are arranged in an array.

[0009] Further, the distance between any two adjacent opening patterns is less than or equal to 2 microns.

[0010] Further, the maximum diameter of the opening pattern is less than or equal to 2 microns.

[0011] Further, the material of the substrate includes one of quartz glass, soda glass, borosilicate glass and resin, and the material of the light shielding layer includes chromium.

[0012] According to another aspect of the present application, a cleaning method of an etching device is provided, comprising: obtaining an operation state of the etching device; determining whether the operation state is a stop state; in the case that the operation state is the stop state, controlling to transfer any one of the mask plates into a reaction chamber of the etching device; controlling to vacuumize and / or de-vacuumize the reaction chamber, so that the pressure of the reaction chamber is controlled within a predetermined pressure range; controlling to input oxygen with a predetermined flow range into the reaction chamber, and turn on a radio frequency power, to perform a plasma cleaning operation on the reaction chamber.

[0013] Further, the stop state comprises a working-end stop state and an idle-end stop state, the idle-end stop state is that an idle time is greater than a preset time, and the determining whether the operation state is the stop state comprises: in the case that the operation state is the working-end stop state or the idle-end stop state, determining that the operation state is the stop state.

[0014] Further, the predetermined pressure range is 3 mTorr-5 mTorr, the predetermined flow range is 200 sccm-300 sccm, the power range of the radio frequency power is 250 W-350 W, and the time range of the plasma cleaning operation is 250 s-350 s.

[0015] According to the technical solution of the present application, the mask plate for cleaning the etching device comprises a substrate and a light shielding layer, wherein the light shielding layer is located on the surface of the substrate, a plurality of opening patterns are arranged in the light shielding layer, and the shape boundary of the normal projection of the opening pattern on the substrate has a plurality of protrusions. The shape boundary of the normal projection of the opening pattern on the substrate has a plurality of protrusions, which can enhance the electrostatic adsorption effect, so that the particles in the reaction chamber of the etching device can be easily adsorbed on the surface of the mask plate in the subsequent plasma cleaning operation, and then the particles adsorbed on the surface of the mask plate are removed through the plasma cleaning program, so that the reaction chamber of the etching device can be cleaned without opening the chamber, thereby solving the problem of long time consumption in cleaning the reaction chamber of the etching device in the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0016] The drawings accompanying the specification of the present application form a part thereof, serve to provide further understanding of the present application, and together with the specification explain the present application, and do not constitute an inappropriate limitation to the present application. In the drawings:

[0017] Figure 1 A side view of a mask plate for cleaning an etching device according to an embodiment of the present application is shown;

[0018] Figure 2A top view of a cleaning method for a reticle of an etching apparatus according to an embodiment of the present application is shown;

[0019] Figure 3 A flow chart of a cleaning method for an etching apparatus according to an embodiment of the present application is shown;

[0020] Figure 4 A schematic diagram of a cleaning device for an etching apparatus according to an embodiment of the present application is shown.

[0021] Wherein, the above-mentioned figures include the following reference signs:

[0022] 101, substrate; 102, light shielding layer; 103, opening pattern. DETAILED DESCRIPTION

[0023] It should be noted that the following detailed description is exemplary in nature and is intended to provide further description of the application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0024] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0025] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. In addition, it will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element, or electrically connected to the other element via a third element.

[0026] As introduced in the background section, the prior art cleaning method for the reaction chamber of the etching apparatus is time-consuming. In order to solve the above problem, the present application provides a cleaning method for a reticle of an etching apparatus and a cleaning method for an etching apparatus.

[0027] In one embodiment of the present application, a cleaning method for a reticle of an etching apparatus is provided, as shown in Figure 1 which includes a substrate 101 and a light shielding layer 102, wherein the light shielding layer 102 is located on the surface of the substrate 101, and a plurality of opening patterns 103 are provided in the light shielding layer 102, and the shape boundary of the orthographic projection of the opening pattern 103 on the substrate has a plurality of protrusions.

[0028] The mask plate for cleaning the etching equipment includes a substrate and a light shielding layer, wherein the light shielding layer is located on the surface of the substrate, a plurality of opening patterns are provided in the light shielding layer, and the shape boundary of the orthographic projection of the opening patterns on the substrate has a plurality of protrusions. The shape boundary of the orthographic projection of the opening patterns on the substrate has a plurality of protrusions, and the protrusions can enhance the electrostatic adsorption effect, so that the particles in the reaction chamber of the etching equipment can be easily adsorbed on the surface of the mask plate in the subsequent plasma cleaning operation, and then the particles adsorbed on the surface of the mask plate are removed through the plasma cleaning program, so that the reaction chamber of the etching equipment can be cleaned without opening the chamber, thereby solving the problem of long time consumption in cleaning the reaction chamber of the etching equipment in the prior art.

[0029] In order to further enhance the adsorption capacity of the opening patterns on the surface of the mask plate, in an embodiment of the present application, the protrusions at least include sharp corner protrusions or circular arc protrusions. As shown in FIG. 1, the shape boundary of the orthographic projection of the opening patterns 103 on the substrate has a plurality of protrusions, and the protrusions are zigzag or semicircular, or can be trapezoidal. Figure 2

[0030] In another embodiment of the present application, the bottom exposed part of the opening patterns is the substrate, and the shapes of at least some of the opening patterns are the same. In order to facilitate the manufacture of the mask plate for cleaning the etching equipment, the opening patterns can be set to the same pattern.

[0031] In order to further facilitate the manufacture of the opening patterns on the mask plate, in another embodiment of the present application, the opening patterns are arranged in an array. In actual application, the pattern area of the mask plate can be divided into a plurality of grids arranged in a close array, and each grid can contain a plurality of openings. The number and shape of the openings in each grid can be set to be the same one by one, so that the manufacture of the mask plate is more convenient.

[0032] In another embodiment of the present application, the distance between any two adjacent opening patterns is less than or equal to 2 microns. The smaller the distance between the opening patterns, that is, the higher the density of the opening patterns, the more protrusions of the opening patterns, and the stronger the adsorption effect of the mask plate, so that more particles can be adsorbed.

[0033] In order to further enhance the adsorption effect of the mask plate, in another embodiment of the present application, the maximum diameter of the opening patterns is less than or equal to 2 microns.

[0034] ​In still another embodiment of the present application, the material of the substrate includes one of quartz glass, soda glass, borosilicate glass, and resin, and the material of the light shielding layer includes chromium. The material of the substrate is not limited to quartz glass, soda glass, borosilicate glass, and resin, and can be selected by those skilled in the art according to actual needs. Chromium has good electrostatic adsorption capacity, and other materials with better electrical conductivity can also be used. Similarly, the material can be selected by those skilled in the art according to actual needs.

[0035] According to another aspect of the present application, a cleaning method of an etching device is provided.

[0036] Figure 3 is a flowchart of the cleaning method of the etching device according to an embodiment of the present application. As shown in Figure 3 , the method includes the following steps:

[0037] Step S101, obtaining the running state of the etching device;

[0038] Step S102, determining whether the running state is a shutdown state;

[0039] Step S103, in the case where the running state is the shutdown state, controlling to transfer any one of the mask plates into the reaction chamber of the etching device;

[0040] Step S104, controlling to perform vacuum pumping and / or vacuum releasing on the reaction chamber, so that the pressure of the reaction chamber is controlled within a predetermined pressure range;

[0041] Step S105, controlling to introduce oxygen with a predetermined flow rate range into the reaction chamber, and turning on the radio frequency power to perform plasma cleaning operation on the reaction chamber.

[0042] In the cleaning method of the etching device, the running state of the etching device is first obtained, and when it is confirmed that the running state is a shutdown state, any one of the mask plates is transferred into the reaction chamber, and vacuum pumping and / or vacuum releasing is controlled to be performed on the reaction chamber, so that the pressure of the reaction chamber is controlled within a predetermined pressure range, and at the same time, the particles in the reaction chamber are moved away. The electrostatic adsorption effect of the mask plate with the plurality of opening patterns and the shape boundary of the orthographic projection of the opening pattern on the substrate is strong, and a large number of particles in the reaction chamber can be adsorbed to the surface of the mask plate. Oxygen with a predetermined flow rate range is introduced, and the radio frequency power is turned on to form plasma, and the particles adsorbed on the mask plate are cleaned, so that the reaction chamber of the etching device can be cleaned without opening the chamber, and the problem of long cleaning time of the reaction chamber of the etching device in the prior art is solved.

[0043] It is noted that the steps illustrated in the flowcharts of the figures can be executed by a computer system, such as a group of computer executable instructions, and that although the steps are presented in the order shown, the steps can be executed in a different order than those shown or described.

[0044] In one embodiment, the shutdown state includes a post-operation stop state in which the operation is ended and stopped, and an idle stop state in which an idle time is greater than a preset time, and the step S102 of determining whether the operation state is the shutdown state can include the following steps:

[0045] The operation state is determined to be the shutdown state when the obtained operation state is the post-operation stop state or the idle stop state. As an example, in the post-operation stop state or the idle stop state, the etching device is cleaned, and the reaction chamber of the etching device can be cleaned in time, thereby ensuring the cleanliness of the reaction chamber of the etching device.

[0046] Specifically, in order to further ensure that the reaction chamber of the etching device is cleaner, the preset time can be 1 hour, and a person skilled in the art can set it according to the actual situation.

[0047] In one embodiment, the step S102 of determining whether the operation state is the shutdown state further includes: returning to the step S101 when it is determined that the operation state is not the shutdown state, i.e., the etching device is in an operation state.

[0048] In one embodiment, the step S105 of controlling the oxygen gas with a predetermined flow range to be introduced into the reaction chamber and turning on the radio frequency power to perform the plasma cleaning operation on the reaction chamber includes: detecting and determining whether the cleanliness of the reaction chamber of the etching device reaches a preset cleanliness, and if so, disconnecting the oxygen gas, turning off the radio frequency power, and ending the plasma cleaning operation, and moving the mask out of the reaction chamber; and if not, returning to the step S105.

[0049] In order to make the cleaning effect of the plasma on the reaction chamber better, in another embodiment of the present application, the predetermined pressure range is 3 mTorr-5 mTorr, the predetermined flow range is 200 sccm-300 sccm, the power range of the radio frequency power is 250 W-350 W, and the time range of the plasma cleaning operation is 250 s-350 s. The time range of the plasma cleaning operation is 250 s-350 s, which can ensure that the particles in the reaction chamber are cleaned more cleanly.

[0050] The embodiment of the present application further provides a cleaning device of an etching equipment. It should be noted that the cleaning device of the etching equipment according to the embodiment of the present application can be used to execute the cleaning method of the etching equipment provided by the embodiment of the present application. The cleaning device of the etching equipment provided by the embodiment of the present application is introduced as follows.

[0051] Figure 4 is a schematic diagram of the cleaning device of the etching equipment according to the embodiment of the present application. As shown in the figure, Figure 4 the device comprises:

[0052] an acquisition unit 10 configured to acquire the running state of the etching equipment;

[0053] a determination unit 20 configured to determine whether the running state is a shutdown state;

[0054] a first control unit 30 configured to, in the case where the running state is the shutdown state, control any one of the mask plates to be transmitted into the reaction cavity;

[0055] a second control unit 40 configured to control the reaction cavity to be vacuumized and / or de-vacuumized, so that the pressure of the reaction cavity is controlled within a predetermined pressure range;

[0056] a third control unit 50 configured to control oxygen with a predetermined flow range to be introduced into the reaction cavity, and to turn on the radio frequency power to perform plasma cleaning operation on the reaction cavity.

[0057] In the cleaning device of the etching equipment, the running state of the etching equipment is acquired by the acquisition unit, when it is confirmed that the running state is the shutdown state, any one of the mask plates is transmitted into the reaction cavity, the reaction cavity is controlled by the second control unit to be vacuumized and / or de-vacuumized, so that the pressure of the reaction cavity is controlled within a predetermined pressure range, at the same time, the particles in the reaction cavity are moved away, the mask plate with the plurality of opening patterns and the shape boundary of the orthographic projection of the opening pattern on the substrate has a plurality of convexes, and the electrostatic adsorption effect of the mask plate is strong, so that a large number of particles in the reaction cavity can be adsorbed to the surface of the mask plate, the oxygen with the predetermined flow range is introduced by the third control unit and the radio frequency power is turned on, so that the plasma is formed to clean the particles adsorbed on the mask plate, thereby the reaction cavity of the etching equipment can be cleaned without opening the cavity, and the problem that the reaction cavity of the etching equipment is cleaned for a long time in the prior art is solved.

[0058] The cleaning device of the etching equipment comprises a processor and a memory, the acquisition unit, the determination unit, the first control unit, the second control unit and the third control unit are stored in the memory as program units, and the corresponding functions are realized by the processor executing the program units stored in the memory.

[0059] The processor comprises a core, and the core retrieves corresponding program units from the memory.

[0060] The memory can comprise non-permanent memory in a computer readable medium, random access memory (RAM) and / or non-volatile memory such as read-only memory (ROM) or flash memory (flash RAM), and the memory comprises at least one memory chip.

[0061] The embodiment of the present application provides a computer readable storage medium, and the computer readable storage medium comprises a stored program, wherein the program controls a device where the computer readable storage medium is located to perform the cleaning method of the etching device when the program is run.

[0062] The embodiment of the present application provides a processor, and the processor is used for running a program, wherein the program performs the cleaning method of the etching device when the program is run.

[0063] The embodiment of the present application provides a device, and the device comprises a processor, a memory and a program stored in the memory and capable of running on the processor, and the processor performs at least the following steps when the program is run:

[0064] Step S101, obtaining a running state of the etching device;

[0065] Step S102, determining whether the running state is a shutdown state;

[0066] Step S103, in the case that the running state is the shutdown state, controlling any one of the mask plates to be transmitted into a reaction chamber of the etching device;

[0067] Step S104, controlling the reaction chamber to be vacuumized and / or vacuumized, so that the pressure of the reaction chamber is controlled in a predetermined pressure range;

[0068] Step S105, controlling oxygen with a predetermined flow range to be introduced into the reaction chamber, and starting radio frequency power, so that the reaction chamber is subjected to plasma cleaning operation.

[0069] The device in the present application can be a server, a PC, a PAD, a mobile phone and the like.

[0070] The present application further provides a computer program product, which is adapted to execute the program with at least the following method steps when executed on a data processing device:

[0071] Step S101, obtaining a running state of the etching device;

[0072] Step S102, determining whether the running state is a stop state;

[0073] Step S103, in the case that the running state is the stop state, controlling to transfer any one of the above-mentioned mask into the reaction chamber of the etching equipment;

[0074] Step S104, controlling to vacuumize and / or release the vacuum of the reaction chamber, so that the pressure of the reaction chamber is controlled within a predetermined pressure range;

[0075] Step S105, controlling to input oxygen with a predetermined flow range into the reaction chamber, and turn on the radio frequency power, to perform plasma cleaning operation on the reaction chamber.

[0076] The present application also provides an electronic device, comprising: one or more processors, a memory, a display device, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs comprise a program for executing any one of the above-mentioned cleaning methods of the etching equipment.

[0077] According to another aspect of the present application, a cleaning system of an etching equipment is provided, comprising a mask and an etching equipment, wherein the mask comprises any one of the above-mentioned masks; and the etching equipment comprises a controller, and the controller is configured to execute any one of the above-mentioned cleaning methods of the etching equipment.

[0078] The cleaning system of the etching equipment comprises a mask and an etching equipment, wherein the mask comprises any one of the above-mentioned masks; and the etching equipment comprises a controller, and the controller is configured to execute any one of the above-mentioned cleaning methods of the etching equipment. The mask of the system can easily adsorb the particles in the reaction chamber of the equipment on the surface of the mask in the plasma cleaning operation, and then remove the particles adsorbed on the surface of the mask through the plasma cleaning program, so that the reaction chamber of the etching equipment can be cleaned without opening the chamber, thereby solving the problem of long time consumption in cleaning the reaction chamber of the etching equipment in the prior art.

[0079] Those skilled in the art will appreciate that embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROMs, optical storage media, etc.) containing computer-usable program code.

[0080] The computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof.

[0081] These computer program instructions can also be stored in a computer readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer readable memory produce an article of manufacture including instructions which implement the function specified in the flowchart block or blocks. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof.

[0082] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart block or blocks. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof. Figure 1 one or more flowcharts and / or blocks in the flowcharts and / or combination thereof.

[0083] In one typical configuration, the computing device includes one or more processors (CPUs), input / output interfaces, network interfaces, and memory.

[0084] The memory can include non-persistent memory and / or volatile memory, such as a random access memory (RAM) including a cache area for the temporary storage of data. The memory can also include non-volatile memory, such as read only memory (ROM) for storing structural information and / or instruction code to boot an operating system. The memory can also include solid state non-volatile memory (e.g., flash memory), disk drives, diskettes, tape cartridges, and / or other storage media. The memory is an example of computer readable medium.

[0085] Computer-readable media includes permanent and non-permanent, removable and non-removable media implemented in any method or technology for information storage. Information can be computer-readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassette, magnetic tape disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information accessible to a computing device. According to the definition herein, computer-readable media does not include transitory media such as modulated data signals and carriers.

[0086] It should also be noted that the terms "comprising", "including", or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles or devices including a series of elements not only include those elements, but also include other elements not explicitly listed or inherent to such processes, methods, articles or devices. Without more limitations, the element defined by the statement "including a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.

[0087] In the above embodiments of the present application, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0088] From the above description, it can be seen that the above-mentioned embodiments of the present application achieve the following technical effects:

[0089] 1) The above-mentioned mask plate for cleaning etching equipment includes a substrate and a light shielding layer, wherein the light shielding layer is located on the surface of the substrate, a plurality of opening patterns are provided in the light shielding layer, and the shape boundary of the orthographic projection of the opening pattern on the substrate has a plurality of protrusions. The shape boundary of the orthographic projection of the opening pattern on the substrate has a plurality of protrusions, which can enhance the electrostatic adsorption effect, so that the particles in the reaction chamber of the etching equipment can be easily adsorbed on the surface of the mask plate in the subsequent plasma cleaning operation, and then the particles adsorbed on the surface of the mask plate are removed through the plasma cleaning program, so that the reaction chamber of the etching equipment can be cleaned without opening the chamber, thereby solving the problem of long time consumption in cleaning the reaction chamber of the etching equipment in the prior art.

[0090] 2) The cleaning method of the etching device, comprising the following steps: firstly, obtaining the running state of the etching device; then, determining whether the running state is a stop state; then, in the case that the running state is the stop state, controlling to transfer any one of the mask plates into the reaction cavity; then, controlling to perform vacuumizing and / or vacuum releasing on the reaction cavity, so as to control the pressure of the reaction cavity in a predetermined pressure range; finally, controlling to input oxygen with a predetermined flow range into the reaction cavity, and to open the radio frequency power to perform plasma cleaning operation on the reaction cavity. The method first obtains the running state of the etching device, and when confirming that the running state is the stop state, any one of the mask plates is transferred into the reaction cavity, and vacuumizing and / or vacuum releasing is performed on the reaction cavity, so as to control the pressure of the reaction cavity in a predetermined pressure range, and at the same time, the particles in the reaction cavity are moved away. The mask plate with the plurality of opening patterns and the shape boundary of the orthographic projection of the opening pattern on the substrate has a plurality of convexes, and the electrostatic adsorption effect of the mask plate is strong, so that a large amount of particles in the reaction cavity can be adsorbed to the surface of the mask plate. Oxygen with a predetermined flow range is input, and the radio frequency power is opened to form plasma, so as to clean the particles adsorbed on the mask plate, so that the reaction cavity of the etching device can be cleaned without opening the cavity, and the problem of long time consumption in cleaning the reaction cavity of the etching device in the prior art is solved.

[0091] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A cleaning method of an etching apparatus, characterized by, The method comprises: acquiring a running state of the etching device; determining whether the running state is a stop state; controlling a mask plate to be transmitted into a reaction cavity of the etching device when the running state is the stop state, the mask plate being used to adsorb particles in the reaction cavity; controlling the reaction cavity to be vacuumized and / or de-vacuumized, so that the pressure of the reaction cavity is controlled within a predetermined pressure range; controlling oxygen with a predetermined flow range to be introduced into the reaction cavity, and turning on a radio frequency power to form a plasma in the reaction cavity, so that the particles adsorbed on the mask plate are cleaned.

2. The cleaning method according to claim 1, characterized by, The stop state includes a working-stop state after work is finished and a vacancy-stop state after a vacancy time is greater than a preset time, The method further comprises: determining that the running state is the stop state when the running state is the working-stop state or the vacancy-stop state.

3. The cleaning method of claim 1, wherein, The predetermined pressure range is 3 mTorr~5 mTorr, the predetermined flow range is 200 sccm~300 sccm, the power range of the radio frequency power is 250 W~350 W, and the time range of the plasma cleaning operation is 250 s~350 s.

4. A reticle for cleaning an etching apparatus, characterized by, The mask plate is applied to the cleaning method of the etching device of claim 1, and the mask plate comprises: a substrate; a light-shielding layer located on a surface of the substrate, the light-shielding layer being provided with a plurality of opening patterns, a shape boundary of a normal projection of the opening pattern on the substrate having a plurality of protrusions, the protrusions being used to adsorb particles in a plasma cleaning process.

5. The reticle of claim 4, wherein, The protrusions at least include sharp-cornered protrusions or circular-arc protrusions.

6. The reticle of claim 4, wherein, A bottom exposure part of the opening pattern exposes the substrate, and shapes of at least part of the opening patterns are the same.

7. The reticle of claim 4, wherein, The opening patterns are arrayed.

8. The reticle of claim 4, wherein, A spacing between any two adjacent opening patterns is less than or equal to 2 microns.

9. The reticle of claim 4, wherein, A maximum diameter of the opening pattern is less than or equal to 2 microns.

10. The reticle according to any one of claims 4 to 9, wherein, The material of the substrate includes one of quartz glass, soda glass, borosilicate glass and resin, and the material of the light-shielding layer includes chromium.

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