Plasma process treatment device

Abstract

The application discloses a kind of plasma process processing device.The device includes: radio frequency power supply, radio frequency power supply is used to provide radio frequency signal;Vacuum cavity, first electrode plate and second electrode plate are arranged in vacuum cavity, first electrode plate is used to be electrically connected with radio frequency power supply;The first target cavity wall of vacuum cavity is used to be electrically connected with ground end;Second electrode plate is spaced apart from first target cavity wall to form interlayer;Wherein, second electrode plate at least includes first sub-electrode plate and second sub-electrode plate;Adjusting layer, first sub-regulating layer is arranged in the interlayer between first sub-electrode plate and first target cavity wall, second sub-regulating layer is arranged in the interlayer between second sub-electrode plate and first target cavity wall, first sub-regulating layer is used to adjust the capacitance between first sub-electrode plate and first target cavity wall, and second sub-regulating layer is used to adjust the capacitance between second sub-electrode plate and first target cavity wall.The embodiment of the application can improve the uniformity of electrode plate plasma.

Description

Technical Field

[0001] This invention relates to the field of plasma technology, and more particularly to a plasma processing apparatus. Background Technology

[0002] Plasma is the fourth state of matter besides solid, liquid, and gas. It is mainly formed by the ionization of gas under the influence of a high electromagnetic field, resulting in a highly reactive substance composed of electrons, positive and negative ions, free radicals, and neutral gas molecules.

[0003] In related technologies, plasma is generated by exciting gas through a plasma processing device. This device includes an excitation power source and an electrode plate for generating an electric field. However, due to factors such as the skin effect, when the plasma processing device is large and the excitation power source provides a high radio frequency, the electric field strength at the center of the electrode plate will be higher than that at the edges. This results in a higher plasma density at the center of the substrate on the electrode plate compared to the edges, affecting substrate coating and etching processes. This effect is exacerbated when the substrate is square. Therefore, improving the uniformity of plasma density has become a critical technical problem to be solved for large-size processing devices. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a plasma processing apparatus that can improve the uniformity of plasma on electrode plates.

[0005] A plasma processing apparatus according to a first aspect of the present invention includes:

[0006] Radio frequency (RF) power supply, which is used to provide RF signals;

[0007] A vacuum cavity is provided with a first electrode plate and a second electrode plate. The first electrode plate is electrically connected to the radio frequency power supply, and the second electrode plate is arranged parallel to the first electrode plate. A first target cavity wall of the vacuum cavity is electrically connected to ground. The first target cavity wall is the cavity wall of the vacuum cavity closest to the second electrode plate. The second electrode plate is spaced apart from the first target cavity wall to form a sandwich. The second electrode plate includes at least a first sub-electrode plate and a second sub-electrode plate.

[0008] The adjustment layer includes at least a first sub-adjustment layer and a second sub-adjustment layer. The first sub-adjustment layer is disposed in the interlayer between the first sub-electrode plate and the first target cavity wall, and the second sub-adjustment layer is disposed in the interlayer between the second sub-electrode plate and the first target cavity wall. The first sub-adjustment layer is used to adjust the capacitance between the first sub-electrode plate and the first target cavity wall, and the second sub-adjustment layer is used to adjust the capacitance between the second sub-electrode plate and the first target cavity wall.

[0009] The plasma processing apparatus according to embodiments of the present invention has at least the following beneficial effects: by providing an adjustment layer between the first target cavity wall and the second electrode plate in the vacuum cavity, and adjusting the capacitance between the first target cavity wall and the first sub-electrode plate through the adjustment layer, and adjusting the capacitance between the first target cavity wall and the second sub-electrode plate through the adjustment layer, the impedance to ground of different parts of the second electrode plate is adjusted, thereby adjusting the plasma density of different parts of the second electrode plate, so that the plasma density of different parts of the second electrode plate tends to be equal, that is, the uniformity of the plasma density of the second electrode plate is achieved.

[0010] According to some embodiments of the present invention, the first sub-adjustment layer includes a first insulating layer, wherein the material of the first insulating layer is a first insulating material;

[0011] The second sub-adjustment layer includes a second insulating layer, the material of which is a second insulating material;

[0012] The first insulating material is different from the second insulating material.

[0013] According to some embodiments of the present invention, the thickness of the first insulating layer is different from the thickness of the second insulating layer.

[0014] According to some embodiments of the present invention, the first sub-adjustment layer further includes a vacuum layer, which is alternately disposed with the first insulating layer.

[0015] According to some embodiments of the present invention, the first sub-adjustment layer includes a third insulating layer;

[0016] The second sub-modulation layer includes a conductive layer.

[0017] According to some embodiments of the present invention, the second electrode plate further includes a third sub-electrode plate, the third sub-electrode plate being disposed at an angle to the second sub-electrode plate;

[0018] The adjustment layer further includes a third sub-adjustment layer and a fourth sub-adjustment layer. The third sub-adjustment layer is disposed in the interlayer between the third sub-electrode plate and the first target cavity wall, and the fourth sub-adjustment layer is disposed in the interlayer between the third sub-electrode plate and the second target cavity wall. The third sub-adjustment layer is used to adjust the capacitance between the third sub-electrode plate and the first target cavity wall, and the fourth sub-adjustment layer is used to adjust the capacitance between the third sub-electrode plate and the second target cavity wall. The second target cavity wall is a cavity wall in a vacuum cavity that is angled to the first target cavity wall.

[0019] According to some embodiments of the present invention, the first sub-electrode plate and the second sub-electrode plate are arranged at intervals.

[0020] According to some embodiments of the present invention, the radio frequency power supply includes:

[0021] The first sub-RF power supply is electrically connected to the first electrode plate and is used to generate the original signal.

[0022] The second sub-RF power supply is connected in parallel with the first sub-RF power supply. The second sub-RF power supply is used to bias the original signal to obtain the RF signal.

[0023] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0024] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0025] Figure 1 This is a schematic diagram of an in vitro excitation device in the related technology of the present invention.

[0026] Figure 2A This is a schematic diagram of a plasma excitation device according to an embodiment of the present invention;

[0027] Figure 2B This is a schematic diagram showing a section of the second electrode plate according to an embodiment of the present invention;

[0028] Figures 3A to 3G This is another schematic diagram showing a division of the second electrode plate according to an embodiment of the present invention;

[0029] Figure 4 This is another schematic diagram of the plasma excitation device according to an embodiment of the present invention;

[0030] Figure 5 This is another schematic diagram of the plasma excitation device according to an embodiment of the present invention;

[0031] Figure 6 This is another schematic diagram of the plasma excitation device according to an embodiment of the present invention.

[0032] Figure label:

[0033] Upper electrode plate 101, lower electrode plate 102, vacuum cavity 201, first electrode plate 202, first target cavity wall 203, first sub-electrode plate 204, second sub-electrode plate 205, first sub-adjustment layer 206, second sub-adjustment layer 207, first insulating layer 208, vacuum layer 209, third sub-electrode plate 210, third sub-adjustment layer 211, fourth sub-adjustment layer 212, first sub-RF power supply 213, and second sub-RF power supply 214. Detailed Implementation

[0034] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0035] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0036] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0037] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0038] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0039] It should be noted that, referring to Figure 1 In related technologies, through Figure 1 The plasma excitation device shown generates plasma. Specifically, the plasma processing device includes an upper electrode plate 101 and a lower electrode plate 102. The lower electrode plate 102 is electrically connected to a radio frequency power supply located outside the vacuum chamber 201, and the upper electrode plate 101 is electrically connected to ground. Due to factors such as the skin effect, the voltage V1 at the center of the lower electrode plate 102 is greater than the voltage V2 at the edge. Referring to the following equation (1), since the impedance at point A of the upper electrode plate 101 is equal to the impedance at point B, the current at point A of the upper electrode plate 101 is greater than the current at point B, which in turn causes the plasma density at point A of the upper electrode plate 101 to be greater than the plasma density at point B, i.e., a non-uniform plasma density phenomenon occurs.

[0040] i = V / Z......Equation (1)

[0041] Where i represents current, V represents voltage, and Z represents impedance.

[0042] Based on this, this application provides a plasma processing apparatus that divides the upper electrode plate (i.e., the second electrode plate) into multiple sub-electrode plates and adjusts the ground impedance of different sub-electrode plates through an adjustment layer, thereby ensuring that the plasma density of different sub-electrode plates tends to be equal.

[0043] Reference Figure 2A and Figure 2BIn some embodiments, the plasma processing apparatus includes a radio frequency (RF) power supply, a vacuum chamber 201, and a conditioning layer. The RF power supply provides RF signals. The vacuum chamber 201 contains a first electrode plate 202 and a second electrode plate. The first electrode plate 202 is electrically connected to the RF power supply, and the second electrode plate is arranged parallel to the first electrode plate 202. A first target cavity wall 203 of the vacuum chamber 201 is electrically connected to ground. The first target cavity wall 203 is the cavity wall of the vacuum chamber closest to the second electrode plate. The second electrode plate and the first target cavity wall 203 are spaced apart to form a sandwich layer. The second electrode plate includes at least a first sub-electrode plate 204 and a second sub-electrode plate 205. The adjustment layer includes at least a first sub-adjustment layer 206 and a second sub-adjustment layer 207. The first sub-adjustment layer 206 is disposed in the interlayer between the first sub-electrode plate 204 and the first target cavity wall 203. The second sub-adjustment layer 207 is disposed in the interlayer between the second sub-electrode plate 205 and the first target cavity wall 203. The first sub-adjustment layer 206 is used to adjust the capacitance between the first sub-electrode plate 204 and the first target cavity wall 203. The second sub-adjustment layer 207 is used to adjust the capacitance between the second sub-electrode plate 205 and the first target cavity wall 203.

[0044] Specifically, both the first electrode plate 202 and the second electrode plate are disposed within the vacuum chamber 201, with the first electrode plate 202 and the second electrode plate arranged parallel to each other. The substrate to be operated is placed on the second electrode plate. When the reactive gas enters the vacuum chamber 201 through the inlet, the reactive gas diffuses to the substrate surface. A radio frequency power supply is used to provide a radio frequency signal to form a reactive electric field between the first electrode plate 202 and the second electrode plate. Under the action of the reactive electric field, the reactive gas decomposes, and the decomposition products act on the substrate to achieve coating, etching, and other effects. In this embodiment, the ground terminal is connected to the cavity wall of the vacuum chamber 201. The cavity wall closest to and parallel to the second electrode plate (i.e., the first target cavity wall 203) is spaced apart from the second electrode plate to form an interlayer. An adjustment layer is disposed within this interlayer as a dielectric layer, so that the first target cavity wall 203, the adjustment layer, and the second electrode plate form a capacitor. As shown in equation (2), when the capacitance C of the capacitor is adjusted, the impedance Zc can be adjusted, thereby adjusting the current and thus adjusting the plasma density. Here, f represents the frequency.

[0045] Zc=-j(1 / 2πfC)......Equation (2)

[0046] Therefore, the adjustment layer in this embodiment includes at least a first sub-adjustment layer 206 and a second sub-adjustment layer 207. The first sub-adjustment layer 206 and the second sub-adjustment layer 207 correspond to different portions of the second electrode plate. Specifically, the portion of the second electrode plate corresponding to the first sub-adjustment layer 206 is designated as the first sub-electrode plate 204, and the portion of the second electrode plate corresponding to the second sub-adjustment layer 207 is designated as the second sub-electrode plate 205. For example, as... Figure 2A and Figure 2B As shown, the circular portion of the second electrode plate at its center is designated as the first sub-electrode plate 204, and the remaining portions of the second electrode plate excluding the first sub-electrode plate 204 are designated as the second sub-electrode plate 205. The capacitance of the corresponding portions of the electrode plate is adjusted by the first sub-adjustment layer 206 and the second sub-adjustment layer 207, respectively, so that the plasma density on the second sub-electrode plate 205 approaches equal to the plasma density on the first sub-electrode plate 204, thereby achieving a uniform distribution of plasma density on the second electrode plate.

[0047] It is understandable that the number of sub-adjustment layers included in the adjustment layer is the same as the number of sub-electrode plates included in the second electrode plate. Furthermore, Figure 2A and Figure 2B The second electrode plate shown is merely an example. Depending on the required adjustment precision, the number of sub-electrode plates in the second electrode plate can be increased to obtain, as shown below. Figures 3A to 3G The example shown is a segmentation of the second electrode plate. It is understood that the "segmentation" described in the embodiments of this application refers to forming sub-electrode plates corresponding to different sub-adjustment layers on the second electrode plate. This "segmentation" does not limit the physical relationship between the sub-electrode plates, that is, the sub-electrode plates can be connected or spaced apart. The embodiments of this application do not specifically limit this.

[0048] The plasma processing apparatus provided in this application embodiment adjusts the impedance to ground at different parts of the second electrode plate by setting an adjustment layer between the first target cavity wall 203 and the second electrode plate in the vacuum cavity 201, and adjusting the capacitance between the first target cavity wall 203 and the first sub-electrode plate 204 and the capacitance between the first target cavity wall 203 and the second sub-electrode plate 205 through the adjustment layer. This adjusts the plasma density at different parts of the second electrode plate, making the plasma density at different parts of the second electrode plate tend to be equal, that is, achieving the uniformity of the plasma density of the second electrode plate.

[0049] The following section provides a detailed explanation of how the regulating layer adjusts the capacitance.

[0050] Reference Figure 2AIn some embodiments, the first sub-adjustment layer 206 includes a first insulating layer, and the second sub-adjustment layer 207 includes a second insulating layer. The first insulating layer is made of a first insulating material, and the second insulating layer is made of a second insulating material; the first insulating material and the second insulating material are different.

[0051] Specifically, as shown in equation (3), the capacitance C is affected by the dielectric constant ε, the plate area s of the electrode plates constituting the capacitor, and the plate spacing d of the electrode plates constituting the capacitor. Therefore, a first insulating material can be filled in the first sub-adjustment layer 206 to form a first insulating layer, and a second insulating material can be filled in the second sub-adjustment layer 207 to form a second insulating layer. The material properties of the first insulating material are different from those of the second insulating material, that is, the dielectric constant of the first insulating material is different from that of the second insulating material. This allows for the adjustment of the capacitance between the first sub-electrode plate 204 and the first target cavity wall 203 according to the first sub-adjustment layer 206, and the adjustment of the capacitance between the second sub-electrode plate 205 and the first target cavity wall 203 according to the second sub-adjustment layer 207.

[0052] C=ε·s / d......Equation (3)

[0053] In some embodiments, the thickness of the first insulating layer is different from the thickness of the second insulating layer. Specifically, as shown in equation (3), the capacitance C is affected by the distance d between the electrode plates constituting the capacitor. Therefore, by adjusting the thickness of the first insulating layer to be different from the thickness of the second insulating layer, the thickness of the first sub-adjustment layer 206 can be different from the thickness of the second sub-adjustment layer 207, thereby adjusting the distance d between the sub-electrode plates (including the first sub-electrode plate 204 and the second sub-electrode plate 205) and the first target cavity wall 203, thereby adjusting the capacitance and plasma density.

[0054] It is understood that, depending on actual needs, the thickness and material of the first insulating layer may be different from those of the second insulating layer, and this application does not specifically limit this aspect.

[0055] Reference Figure 2A and Figure 4In some embodiments, the first sub-adjustment layer 206 further includes a vacuum layer 209, which is alternately disposed with the first insulating layer 208. Specifically, since the dielectric constant of vacuum is close to 1, a vacuum layer 209 can also be disposed in the first sub-adjustment layer 206, and the vacuum layer 209 can be alternately disposed with the first insulating layer 208, thereby effectively reducing capacitance to increase impedance and reducing the construction cost of the first sub-adjustment layer 206. It is understood that the number of alternately disposed first insulating layers 208, the number of vacuum layers 209, the thickness of the first insulating layer 208, and the thickness of the vacuum layer 209 can be adaptively set according to actual needs, and this application embodiment does not specifically limit this. However, it should be understood that the thickness of the vacuum layer 209 should be limited to a level that does not generate plasma particles.

[0056] It is understood that, depending on actual needs, the vacuum layer 209 can also be replaced with an air layer, and this application embodiment does not specifically limit this.

[0057] It is understood that, depending on actual needs, the second sub-adjustment layer 207 can be configured in the same way as the first sub-adjustment layer 206, that is, a vacuum layer can be provided in the second sub-adjustment layer 207. This embodiment of the application does not specifically limit this. Furthermore, the vacuum layer 209 can be replaced with other insulating layers with different dielectric constants, or the first insulating layer 208, vacuum layer 209, and other insulating layers can be alternately provided. This embodiment of the application does not specifically limit this.

[0058] Reference Figure 2A In some embodiments, the first sub-adjustment layer 206 includes a third insulating layer, and the second sub-adjustment layer 207 includes a conductive layer. Specifically, the first sub-adjustment layer 206 is filled with insulating material to form a third insulating layer, and the second sub-adjustment layer 207 is filled with conductive material to form a conductive layer. This allows the second sub-electrode plate 205 corresponding to the second sub-adjustment layer 207 to be directly grounded, while the first sub-electrode plate 204 corresponding to the first sub-adjustment layer 206 is not grounded. This, in turn, adjusts the ground impedance of the first sub-electrode plate 204 and the second sub-electrode plate 205, making the plasma densities of the first sub-electrode plate 204 and the second sub-electrode plate 205 approximately equal.

[0059] Reference Figure 2A and Figure 5In some embodiments, the second electrode plate further includes a third sub-electrode plate 210, which is angled to the second sub-electrode plate 205. The adjustment layer further includes a third sub-adjustment layer 211 and a fourth sub-adjustment layer 212. The third sub-adjustment layer 211 is disposed in the interlayer between the third sub-electrode plate 210 and the first target cavity wall 203, and the fourth sub-adjustment layer 212 is disposed in the interlayer between the third sub-electrode plate 210 and the second target cavity wall. The third sub-adjustment layer 211 is used to adjust the capacitance between the third sub-electrode plate 210 and the first target cavity wall 203, and the fourth sub-adjustment layer 212 is used to adjust the capacitance between the third sub-electrode plate 210 and the second target cavity wall. The second target cavity wall is a cavity wall in a vacuum cavity that is angled to the first target cavity wall 203.

[0060] Specifically, depending on the shape of the second electrode plate, the second electrode plate further includes a third sub-electrode plate 210. The third sub-electrode plate 210 is set at an angle to the second sub-electrode plate 205, so that the edge of the second electrode plate is bent. The adjustment layer also includes a third sub-adjustment layer 211 disposed in the interlayer between the third sub-electrode plate 210 and the upper cavity wall of the vacuum cavity 201 (i.e., the first target cavity wall 203), and a fourth sub-adjustment layer 212 disposed in the interlayer between the third sub-electrode plate 210 and the left or right cavity wall of the vacuum cavity 201 (i.e., the second target cavity wall). It can be understood that the method of adjusting the capacitance between the third sub-electrode plate 210 and the first target cavity wall 203 by the third sub-adjustment layer 211, and the method of adjusting the capacitance between the third sub-electrode plate 210 and the second target cavity wall by the fourth sub-adjustment layer 212, can refer to the description of the capacitance adjustment of the first sub-adjustment layer 206 as in any of the above embodiments, and will not be repeated in this embodiment. It is understandable that, since both the third sub-adjustment layer 211 and the fourth sub-adjustment layer 212 essentially adjust the impedance of the third sub-electrode plate 210 to ground, their adjustment effects should be the same. In this embodiment, the impedance of the third sub-electrode plate 210 to ground is adjusted through the third sub-adjustment layer 211 and the fourth sub-adjustment layer 212, thereby achieving a convergence of plasma densities among the third sub-electrode plate 210, the second sub-electrode plate 205, and the first sub-electrode plate 204, and ultimately achieving uniformity of plasma density on the second electrode plate.

[0061] Reference Figure 6In some embodiments, the radio frequency (RF) power supply includes a first sub-RF power supply 213 and a second sub-RF power supply 214. The first sub-RF power supply 213 is electrically connected to the first electrode plate 202 and is used to generate the original signal. The second sub-RF power supply 214 is connected in parallel with the first sub-RF power supply 213 and is used to bias the original signal to obtain an RF signal. Specifically, the RF power supply includes a first sub-RF power supply 213 for high-frequency output and a second sub-RF power supply 214 for low-frequency output. The first sub-RF power supply 213 generates the original signal to produce high-density plasma within the vacuum cavity 201; that is, the original signal is used to ionize the gas into plasma. The second sub-RF power supply 214 acts as a bias power supply, applying a bias voltage to the original signal to give the plasma greater energy, thereby accelerating the bombardment; that is, the second sub-RF power supply provides energy to the plasma to cause the ions therein to bombard the processing substrate. It is understood that in some embodiments, the RF power supply further includes an impedance matching unit, one end of which is electrically connected to the first electrode plate 202, and the other end of which is electrically connected to the first sub-RF power supply 213 (or the second sub-RF power supply 214). The impedance matching unit is used to improve the transmission rate of the RF signal, thereby improving energy efficiency. Specifically, the impedance matching unit includes components such as capacitors and inductors, which are not specifically limited in this embodiment.

[0062] The plasma processing apparatus provided in this application adjusts the ground impedance of the first sub-electrode plate through a first sub-adjustment layer and adjusts the ground impedance of the second sub-electrode plate through a second sub-adjustment layer, making the current per unit area of ​​the first and second sub-electrode plates equal, thereby achieving plasma uniformity on the second electrode plate. The plasma excitation device provided in this application is not only simple in structure, but also reduces costs compared to related technologies that use capacitance adjustment devices composed of various components outside the vacuum cavity.

[0063] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A plasma processing apparatus, characterized in that, include: Radio frequency (RF) power supply, which is used to provide RF signals; A vacuum cavity is provided with a first electrode plate and a second electrode plate. The first electrode plate is electrically connected to the radio frequency power supply, and the second electrode plate is arranged parallel to the first electrode plate. A first target cavity wall of the vacuum cavity is electrically connected to ground. The first target cavity wall is the cavity wall of the vacuum cavity closest to the second electrode plate. The second electrode plate is spaced apart from the first target cavity wall to form a sandwich. The second electrode plate includes at least a first sub-electrode plate and a second sub-electrode plate. An adjustment layer, comprising at least a first sub-adjustment layer and a second sub-adjustment layer, wherein the first sub-adjustment layer is disposed in the interlayer between the first sub-electrode plate and the first target cavity wall, and the second sub-adjustment layer is disposed in the interlayer between the second sub-electrode plate and the first target cavity wall; the first sub-adjustment layer is used to adjust the capacitance between the first sub-electrode plate and the first target cavity wall, and the second sub-adjustment layer is used to adjust the capacitance between the second sub-electrode plate and the first target cavity wall. The first sub-adjustment layer includes a first insulating layer, the material of which is a first insulating material; the second sub-adjustment layer includes a second insulating layer, the material of which is a second insulating material; the first insulating material and the second insulating material are different. The second electrode plate further includes a third sub-electrode plate, which is set at an angle to the second sub-electrode plate. The adjustment layer further includes a third sub-adjustment layer and a fourth sub-adjustment layer. The third sub-adjustment layer is disposed in the interlayer between the third sub-electrode plate and the first target cavity wall, and the fourth sub-adjustment layer is disposed in the interlayer between the third sub-electrode plate and the second target cavity wall. The third sub-adjustment layer is used to adjust the capacitance between the third sub-electrode plate and the first target cavity wall, and the fourth sub-adjustment layer is used to adjust the capacitance between the third sub-electrode plate and the second target cavity wall. The second target cavity wall is a cavity wall in a vacuum cavity that is set at an angle to the first target cavity wall. By adjusting the impedance of the third sub-electrode plate to ground through the third and fourth sub-adjustment layers, the plasma density of the third sub-electrode plate, the second sub-electrode plate, and the first sub-electrode plate tends to be equal, thereby achieving the uniformity of the plasma density of the second electrode plate.

2. The plasma processing apparatus according to claim 1, characterized in that, The thickness of the first insulating layer is different from the thickness of the second insulating layer.

3. The plasma processing apparatus according to claim 1, characterized in that, The first sub-conditioning layer further includes a vacuum layer, which is alternately disposed with the first insulating layer.

4. The plasma processing apparatus according to claim 1, characterized in that, The first sub-adjustment layer includes a third insulating layer; The second sub-modulation layer includes a conductive layer.

5. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that, The first sub-electrode plate and the second sub-electrode plate are arranged at intervals.

6. The plasma processing apparatus according to any one of claims 1 to 4, characterized in that, The radio frequency power supply includes: The first sub-RF power supply is electrically connected to the first electrode plate and is used to generate the original signal. The second sub-RF power supply is connected in parallel with the first sub-RF power supply. The second sub-RF power supply is used to bias the original signal to obtain the RF signal.

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