high frequency module

Abstract

The semiconductor IC (130) includes a first high-frequency element (for example, an inductor (218) of a low-noise amplifier (21)), a second high-frequency element (for example, an inductor (215) of a low-noise amplifier (22)), and a first via conductor (for example, a via conductor (131)) disposed between the first high-frequency element and the second high-frequency element and connected to a ground potential.

Description

Technical Field

[0001] The present invention relates to a semiconductor integrated circuit and a high-frequency module. Background Art

[0002] In mobile communication devices such as mobile phones, the number of circuit components constituting a high-frequency front-end module has increased, particularly with the advancement of multi-band technology. For example, Patent Document 1 discloses a front-end module in which a plurality of low-noise amplifiers and the like are packaged.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2015 / 0133067 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] In conventional front-end modules, multiple high-frequency components or electrical circuits are sometimes integrated into a semiconductor integrated circuit to achieve miniaturization. In this case, inductive coupling and / or capacitive coupling occur between the high-frequency components or electrical circuits, potentially degrading the electrical characteristics of the front-end module.

[0008] Therefore, the present invention provides a semiconductor integrated circuit and a high-frequency module capable of suppressing inductive coupling and / or capacitive coupling between a plurality of high-frequency elements or between a plurality of electrical circuits integrated in the semiconductor integrated circuit.

[0009] Means used to solve problems

[0010] A semiconductor integrated circuit according to one embodiment of the present invention includes a first high-frequency element, a second high-frequency element, and a first via-hole conductor disposed between the first high-frequency element and the second high-frequency element and connected to a ground potential.

[0011] Effects of the Invention

[0012] According to the semiconductor integrated circuit of one embodiment of the present invention, inductive coupling and / or capacitive coupling between a plurality of high-frequency elements or between a plurality of electric circuits integrated in the semiconductor integrated circuit can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0014] Figure 2This is a circuit configuration diagram of a low-noise amplifier included in a high-frequency module according to an embodiment.

[0015] Figure 3 This is a circuit configuration diagram of a filter included in the high-frequency module according to the embodiment.

[0016] Figure 4 This is a plan view of a high-frequency module according to an embodiment.

[0017] Figure 5 This is an enlarged plan view of a semiconductor IC included in the high-frequency module according to the embodiment.

[0018] Figure 6 This is a cross-sectional view of a high-frequency module according to an embodiment.

[0019] Figure 7 This is a cross-sectional view of a high-frequency module according to an embodiment.

[0020] Figure 8 This is a cross-sectional view of a high-frequency module according to an embodiment. DETAILED DESCRIPTION

[0021] The following are detailed descriptions of the embodiments of the present invention using the accompanying drawings. It should be noted that the embodiments described below are all inclusive or specific examples. The values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments are examples and do not limit the scope of the present invention.

[0022] It should be noted that the figures are schematic diagrams that have been appropriately emphasized, omitted, or adjusted in ratio to illustrate the present invention and are not necessarily strictly illustrative. The figures may differ from actual shapes, positional relationships, and ratios. In the figures, substantially identical structures are labeled with the same reference numerals, and repeated descriptions may be omitted or simplified.

[0023] In the following figures, the x-axis and y-axis are axes perpendicular to each other on a plane parallel to the main surface of the module substrate. The z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating upward and its negative direction indicating downward.

[0024] In the circuit structure of the present invention, "connected" includes not only direct connection via connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. "Direct connection" means direct connection via connection terminals and / or wiring conductors, without intervening through other circuit elements. "Connected between A and B" means connection between A and B, connecting both A and B.

[0025] In the component configuration of the present invention, "viewed from above" means observing the object by projecting it orthographically from the positive side of the z-axis onto the xy plane. "When viewed from above, A and B overlap" means that at least a portion of the area of ​​A projected orthographically onto the xy plane overlaps with at least a portion of the area of ​​B projected orthographically onto the xy plane. "Components configured on the principal surface of the substrate" includes not only components configured on the principal surface in contact with the principal surface of the substrate, but also components configured above the principal surface without contacting the principal surface (for example, components stacked on other components configured on the substrate), and components configured by embedding a portion of the component into the substrate from the principal surface side. "A is configured between B and C" means that at least one of the multiple line segments connecting an arbitrary point in B with an arbitrary point in C passes through A.

[0026] (Implementation Method)

[0027] [1.1 Circuit Structure of High-Frequency Module 1 and Communication Device 5]

[0028] Reference Figure 1 The circuit configurations of the high-frequency module 1 and the communication device 5 according to this embodiment will be described. Figure 1 1 is a circuit configuration diagram of the high-frequency module 1 and the communication device 5 according to the embodiment.

[0029] [1.1.1 Circuit Configuration of Communication Device 5]

[0030] First, the circuit structure of the communication device 5 is described. Figure 1 As shown, the communication device 5 of this embodiment includes a high-frequency module 1 , an antenna 2 , an RFIC 3 , and a BBIC 4 .

[0031] The high-frequency module 1 transmits a high-frequency signal between the antenna 2 and the RFIC 3. The internal structure of the high-frequency module 1 will be described below.

[0032] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , receives a high-frequency signal from the outside, and outputs the signal to the high-frequency module 1 .

[0033] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 processes the high-frequency received signal input via the reception path of high-frequency module 1 through down-conversion and other methods, and outputs the resulting received signal to BBIC4. RFIC3 also includes a control unit that controls switches and amplifiers included in high-frequency module 1. It should be noted that some or all of the functions of RFIC3's control unit can be installed externally to RFIC3, for example, on BBIC4 or high-frequency module 1.

[0034] BBIC 4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band lower than the high-frequency signal transmitted by high-frequency module 1. Signals processed by BBIC 4 include, for example, image signals for image display and / or audio signals for communication via a speaker.

[0035] It should be noted that, in the communication device 5 of this embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0036] [1.1.2 Circuit Structure of High-Frequency Module 1]

[0037] Next, the circuit structure of the high frequency module 1 will be described. Figure 1 As shown, high-frequency module 1 includes low-noise amplifiers 21 and 22, switches 51 to 54, filters 61 to 65, a control circuit 70, an antenna connection terminal 100, and a high-frequency output terminal 120. Low-noise amplifiers 21 and 22, switches 51 to 54, filter 65, and control circuit 70 are incorporated into a semiconductor integrated circuit (IC) 130.

[0038] The antenna connection terminal 100 is connected to the antenna 2 .

[0039] The switch 54 is connected between the antenna connection terminal 100 and the filters 61 to 64. The switch 54 includes terminals 541 to 545. The terminal 541 is connected to the antenna connection terminal 100. The terminals 542 to 545 are connected to the filters 61 to 64, respectively.

[0040] In this connection structure, switch 54 can connect at least one of terminals 542 to 545 to terminal 541 based on a control signal from RFIC 3, for example. That is, switch 54 can individually switch between connection and disconnection between antenna connection terminal 100 and each of filters 61 to 64. Switch 54 is, for example, composed of a multi-connection switch circuit and is sometimes referred to as an antenna switch.

[0041] Hereinafter, the term "communication frequency band" refers to a frequency band predefined for communication systems by standardization organizations such as 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers). A communication system is a communication system constructed using radio access technology (RAT). Examples of communication systems include, but are not limited to, 5GNR (5th Generation New Radio), LTE (Long Term Evolution), and WLAN (Wireless Local Area Network).

[0042] Filter 61 (A-Rx) is an example of a first filter and has a passband that includes at least a portion of communication band A. Communication band A is an example of a first communication band. If communication band A is a communication band for frequency division duplex (FDD), the passband of filter 61 includes the downlink operating band of communication band A. The downlink operating band refers to a portion of the communication band designated for downlink use. If communication band A is a communication band for time division duplex (TDD), the passband of filter 61 includes the entire communication band A. One end of filter 61 is connected to antenna connection terminal 100 via switch 54. The other end of filter 61 is connected to the input of low-noise amplifier 21 via switch 51.

[0043] Filter 62 (B-Rx) is an example of a second filter and has a passband that includes at least a portion of communication band B. Communication band B is an example of a second communication band. If communication band B is an FDD communication band, the passband of filter 62 includes the downlink operating band of communication band B. If communication band B is a TDD communication band, the passband of filter 62 includes the entire communication band B. One end of filter 62 is connected to antenna connection terminal 100 via switch 54. The other end of filter 62 is connected to the input of low-noise amplifier 21 via switch 51.

[0044] Filter 63 (C-Rx) is an example of a third filter and has a passband that includes at least a portion of communication band C. Communication band C is an example of a third communication band. If communication band C is an FDD communication band, the passband of filter 63 includes the downlink operating band of communication band C. If communication band C is a TDD communication band, the passband of filter 63 includes the entire communication band C. One end of filter 63 is connected to antenna connection terminal 100 via switch 54. The other end of filter 63 is connected to the input of low-noise amplifier 22 via switch 52.

[0045] Filter 64 (D-Rx) is an example of a fourth filter and has a passband that includes at least a portion of communication band D. Communication band D is an example of a fourth communication band. If communication band D is an FDD communication band, the passband of filter 64 includes the downlink operating band of communication band D. If communication band D is a TDD communication band, the passband of filter 64 includes the entire communication band D. One end of filter 64 is connected to antenna connection terminal 100 via switch 54. The other end of filter 64 is connected to the input of low-noise amplifier 22 via switch 52.

[0046] Switch 51 is an example of a first switch and is connected between filters 61 and 62 and low-noise amplifier 21. Switch 51 includes terminals 511 to 513. Terminals 511 and 512 are connected to filters 61 and 62, respectively. Terminal 513 is connected to the input of low-noise amplifier 21.

[0047] In this connection structure, the switch 51 can connect at least one of the terminals 511 and 512 to the terminal 513 based on a control signal from the RFIC 3, for example. That is, the switch 51 can independently switch between connection and disconnection between the filter 61 and the low-noise amplifier 21, and between connection and disconnection between the filter 62 and the low-noise amplifier 21. The switch 51 is formed, for example, of a multi-connection type switch circuit.

[0048] The switch 52 is an example of a second switch and is connected between the filters 63 and 64 and the low-noise amplifier 22. The switch 52 includes terminals 521 to 523. Terminals 521 and 522 are connected to the filters 63 and 64, respectively. Terminal 523 is connected to the input of the low-noise amplifier 22.

[0049] In this connection structure, the switch 52 can connect at least one of the terminals 521 and 522 to the terminal 523 based on a control signal from the RFIC 3, for example. That is, the switch 52 can independently switch between connection and disconnection between the filter 63 and the low-noise amplifier 22, and between connection and disconnection between the filter 64 and the low-noise amplifier 22. The switch 52 is formed, for example, of a multi-connection type switch circuit.

[0050] The low-noise amplifier 21 is an example of a first low-noise amplifier, and its input is connected to filters 61 and 62 via a switch 51 , and its output is connected to a filter 65 via a switch 53 .

[0051] The low-noise amplifier 22 is an example of a second low-noise amplifier, and its input is connected to filters 63 and 64 via a switch 52 , and its output is connected to a filter 65 via a switch 53 .

[0052] It should be noted that, after using Figure 2 The circuit configurations of the low-noise amplifiers 21 and 22 will be described.

[0053] Switch 53 is an example of a third switch and is connected between low-noise amplifiers 21 and 22 and filter 65. Switch 53 includes terminals 531 to 533. Terminals 531 and 532 are connected to the outputs of low-noise amplifiers 21 and 22, respectively. Terminal 533 is connected to one end of filter 65.

[0054] In this connection structure, the switch 53 can connect at least one of the terminals 531 and 532 to the terminal 533 based on a control signal from the RFIC 3, for example. That is, the switch 53 can independently switch between connection and disconnection between the low-noise amplifier 21 and the filter 65, and between connection and disconnection between the low-noise amplifier 22 and the filter 65. The switch 53 is formed, for example, of a multi-connection type switch circuit.

[0055] The filter 65 is an example of a fifth filter, and has a passband that includes at least a portion of each of the communication frequency bands A to D. One end of the filter 65 is connected to the terminal 533 of the switch 53, and the other end of the filter 65 is connected to the high-frequency output terminal 120. As the filter 65, for example, a low-pass filter composed of an LC circuit can be used, but it is not limited to this. It should be noted that the following Figure 3 The circuit structure of the filter 65 will be described.

[0056] Control circuit 70 is an electrical circuit for control signals with a frequency lower than that of high-frequency signals. Control circuit 70 receives digital control signals, such as MIPI (Mobile Industry Processor Interface) and / or GPIO (General Purpose I / O), from RFIC 3, and controls at least one of low-noise amplifiers 21 and 22 and switches 51 to 54.

[0057] The semiconductor IC 130 includes a plurality of high-frequency circuits and the control circuit 70. In the present embodiment, the semiconductor IC 130 includes the switches 51 to 54, the low-noise amplifiers 21 and 22, and the filter 65 as the plurality of high-frequency circuits.

[0058] Note that, Figure 1 Some of the circuit elements illustrated can not be included in the high-frequency module 1. For example, the high-frequency module 1 can include only the semiconductor IC 130 including the plurality of high-frequency elements, and can not include other circuit elements (for example, the switches 51 and the filters 61 to 64).

[0059] [1.1.3 Circuit structure of low-noise amplifiers 21 and 22]

[0060] Next, the circuit structure of the low-noise amplifier 21 will be described with reference to Figure 2 The circuit structure of the low-noise amplifier 21 will be described. Figure 2 is a circuit diagram of the low-noise amplifier 21 included in the high-frequency module 1 of the present embodiment. Note that the circuit structure of the low-noise amplifier 22 is the same as that of the low-noise amplifier 21, and thus the illustration and description thereof are omitted.

[0061] As illustrated in Figure 2 , the low-noise amplifier 21 includes an input terminal 211, an output terminal 212, field effect transistors (FETs) 213 and 214 connected in cascade, inductors 215 and 218, and capacitors 216, 217, 219, and 220.

[0062] The input terminal 211 is connected to the terminal 513 of the switch 51, and receives the reception signals of the communication bands A and B from the filters 61 and 62 via the switch 51.

[0063] The output terminal 212 is connected to the terminal 531 of the switch 53, and outputs the amplified reception signals of the communication bands A and B to the high-frequency output terminal 120 via the switch 53 and the filter 65.

[0064] The source terminal of the FET 213 is connected to the other end of the inductor 215 grounded at one end. The gate terminal of the FET 213 is connected to the input terminal 211. The capacitor 216 is connected between the gate and source terminals of the FET 213.

[0065] The inductor 215 is an example of the second high-frequency element, and corresponds to a second inductor. Here, the inductor 215 functions as a source inductor for constituting a series feedback.

[0066] The source terminal of FET 214 is connected to the drain terminal of FET 213. The gate terminal of FET 214 is grounded via capacitor 217. The drain terminal of FET 214 is connected to output terminal 212 via capacitor 210. The drain terminal of FET 214 is connected to a power supply line that supplies a power supply voltage via an inductor 218 and a capacitor 219 connected in parallel.

[0067] Inductor 218 is an example of a first high-frequency component and corresponds to the first inductor. Here, inductor 218 functions as a choke inductor, suppressing the outflow of high-frequency signals from the high-frequency signal line that transmits the high-frequency signal to the power supply line that supplies the power supply voltage. Furthermore, inductor 218, along with capacitors 219 and 210, also functions as an impedance matching circuit for output impedance matching.

[0068] It should be noted that Figure 2 The circuit configuration of the low-noise amplifier 21 is an example and is not limited thereto. For example, a heterojunction bipolar transistor (HBT) may be used instead of the FET.

[0069] [1.1.4 Circuit Structure of Filter 65]

[0070] Next, refer to Figure 3 The circuit configuration of the filter 65 will be described. Figure 3 1 is a circuit configuration diagram of the filter 65 included in the high-frequency module 1 according to the embodiment.

[0071] The filter 65 is an LC filter and functions as a low-pass filter. Figure 3 As shown, filter 65 includes an input terminal 651, an output terminal 652, inductors 653 and 654, and capacitors 655 to 657. It should be noted that filter 65 is not limited to a low-pass filter. Filter 65 can also function as a high-pass filter, a band-pass filter, or a band-stop filter, or as an impedance matching element.

[0072] The input terminal 651 is connected to the terminal 533 of the switch 53 , and receives the amplified reception signal from the low-noise amplifiers 21 and 22 via the switch 53 .

[0073] The output terminal 652 is connected to the high-frequency output terminal 120 , and outputs the reception signal of the communication frequency bands A to D output from the filter 65 to the high-frequency output terminal 120 .

[0074] The inductor 653 is an example of a third inductor. One end of the inductor 653 is connected to the input terminal 651 and is grounded via a capacitor 655. The other end of the inductor 653 is connected to one end of the inductor 654 and is grounded via a capacitor 656.

[0075] The inductor 654 is also an example of a third inductor. One end of the inductor 654 is connected to the other end of the inductor 653 and is grounded via a capacitor 656. The other end of the inductor 654 is connected to the output terminal 652 and is grounded via a capacitor 657.

[0076] It should be noted that Figure 3 The circuit configuration of the filter 65 is an example and is not limited thereto. For example, the filter 65 may not include the inductor 653 and the capacitor 655. In this case, one end of the inductor 654 may be connected to the input terminal 651.

[0077] [1.2 Component Configuration of High-Frequency Module 1]

[0078] Next, refer to Figures 4 to 8 Component arrangement of the high-frequency module 1 configured as described above will be described in detail.

[0079] Figure 4 1 is a top view of the high-frequency module 1 according to the embodiment. Figure 4 In the drawings, (a) shows a view of the main surface 91 a of the module substrate 91 as viewed from the positive z-axis side, and (b) shows a view of the main surface 91 b of the module substrate 91 as viewed from the positive z-axis side. Figure 5 This is an enlarged plan view of the semiconductor IC 130 included in the high-frequency module 1 according to the embodiment. Figures 6 to 8 It is a cross-sectional view of the high-frequency module 1 according to the embodiment. Figures 6 to 8 The cross sections of the high frequency module 1 are Figure 4 Cross-sections at lines vi-vi, vii-vii and viii-viii.

[0080] like Figures 4 to 8 As shown, the high frequency module 1 has the following features: Figure 1 In addition to the components of the circuit element shown in FIG. 1 , the module substrate 91, resin members 92 and 93, a shield electrode layer 95, and a plurality of post electrodes 150 are also provided. Figure 4 In the figure, the resin members 92 and 93 and the shield electrode layer 95 are omitted.

[0081] The module substrate 91 has main surfaces 91a and 91b facing each other. In the present embodiment, the module substrate 91 has a rectangular shape in plan view, but the shape of the module substrate 91 is not limited thereto. As the module substrate 91, for example, a Low Temperature Co-fired Ceramics (LTCC) substrate having a stacked structure of a plurality of dielectric layers, a High Temperature Co-fired Ceramics (HTCC) substrate, an in-component substrate, a substrate having a Redistribution Layer (RDL), or a printed substrate, or the like can be used, but is not limited thereto. Through-hole conductors 911 to 913 and a ground electrode pattern 914 are formed in the module substrate 91.

[0082] The through-hole conductors 911 to 913 are through holes that penetrate in the thickness direction (z direction) of the module substrate 91. Note that the through-hole conductors 911 to 913 are not limited to through holes. For example, the through-hole conductors 911 to 913 can also be constituted by a blind hole formed on the side of the main surface 91a, a blind hole formed on the side of the main surface 91b, and a planar electrode pattern connecting the two blind holes in the module substrate 91.

[0083] The main surface 91a is an example of a first main surface, and is sometimes referred to as an upper surface or a surface. A plurality of components (specifically, filters 61 to 64) are arranged on the main surface 91a.

[0084] The filters 61 to 64 are elastic wave filters (for example, surface acoustic wave filters and / or elastic wave filters using BAW (Bulk Acoustic Wave), or the like). Note that the filters 61 to 64 are not limited to elastic wave filters, and can be, for example, LC resonant filters and / or dielectric filters, or the like.

[0085] The resin member 92 is arranged on the main surface 91a of the module substrate 91, and covers the main surface 91a and the components on the main surface 91a. The resin member 92 has a function of ensuring the reliability of the mechanical strength and moisture resistance of the components on the main surface 91a.

[0086] The main surface 91b is an example of a second main surface, and is sometimes referred to as a lower surface or a back surface. The semiconductor IC 130 and a plurality of column electrodes 150 are arranged on the main surface 91b.

[0087] Semiconductor IC 130 is an electronic component that has electronic circuits (e.g., high-frequency circuits and / or control circuits) formed on and within a semiconductor chip (also called a bare die). Semiconductor IC 130 can be constructed, for example, using a CMOS (Complementary Metal Oxide Semiconductor) process, specifically, using an SOI (Silicon on Insulator) process. This allows for low-cost manufacturing of semiconductor IC 130. It should be noted that semiconductor IC 130 can also be constructed from at least one of GaAs, SiGe, and GaN. This enables the realization of high-quality semiconductor components.

[0088] like Figure 5 As shown, a plurality of high-frequency circuits (switches 51 to 54 , low-noise amplifiers 21 and 22 , and filter 65 ) and a control circuit 70 are integrated in the semiconductor IC 130 , and a plurality of via-hole conductors 131 to 133 are also formed.

[0089] The plurality of via-hole conductors 131 are an example of a plurality of first via-hole conductors. The plurality of via-hole conductors 131 are arranged between the low-noise amplifiers 21 and 22 and are connected to the ground potential.

[0090] like Figure 5 As shown, multiple via-hole conductors 131 are arranged along the boundary between low-noise amplifiers 21 and 22, separating low-noise amplifiers 21 and 22. At least one via-hole conductor among the multiple via-hole conductors 131 is arranged between inductor 215 included in low-noise amplifier 21 and inductor 218 included in low-noise amplifier 22. Furthermore, at least one via-hole conductor among the multiple via-hole conductors 131 is arranged between inductor 218 included in low-noise amplifier 21 and inductor 215 included in low-noise amplifier 22.

[0091] like Figure 4 and Figure 6 As shown, at least one of the plurality of via-hole conductors 131 overlaps with the filter 61 in a plan view and is connected to the filter 61 via a via-hole conductor 911 in the module substrate 91 .

[0092] The plurality of via-hole conductors 132 are an example of a plurality of second via-hole conductors. The plurality of via-hole conductors 132 are arranged between the low-noise amplifier 22 and the filter 65 and are connected to the ground potential.

[0093] like Figure 5As shown, multiple via-hole conductors 132 are arranged along the boundary between the low-noise amplifier 22 and the filter 65, separating the low-noise amplifier 22 from the filter 65. At least one via-hole conductor among the multiple via-hole conductors 132 is arranged between the inductor 215 included in the low-noise amplifier 22 and the inductor 654 included in the filter 65. In addition, at least one via-hole conductor among the multiple via-hole conductors 132 is arranged between the inductor 218 included in the low-noise amplifier 22 and the inductor 653 included in the filter 65.

[0094] like Figure 4 and Figure 7 As shown, at least one of the plurality of via-hole conductors 132 overlaps with the filter 61 in a plan view and is connected to the filter 61 via a via-hole conductor 912 in the module substrate 91 .

[0095] The plurality of via-hole conductors 133 are an example of a plurality of third via-hole conductors. The plurality of via-hole conductors 133 are arranged between the control circuit 70, the low-noise amplifier 21, and the switch 51, and are connected to the ground potential.

[0096] like Figure 5 As shown, a plurality of via conductors 133 are arranged along the boundary of the control circuit 70 , separating the control circuit 70 from the low-noise amplifier 21 and the switch 51 .

[0097] like Figure 4 and Figure 8 As shown, at least one of the plurality of via-hole conductors 133 overlaps with the filter 62 in a plan view and is connected to the filter 62 via a via-hole conductor 913 in the module substrate 91 .

[0098] The multiple via conductors 131-133 are through-holes that penetrate the semiconductor IC 130 in the thickness direction (z-direction), and are called through-silicon vias (TSVs). It should be noted that the multiple via conductors 131-133 are not limited to TSVs. For example, the multiple via conductors 131-133 can also be composed of a blind via formed on one surface of the semiconductor IC 130, a blind via formed on the other surface, and a planar electrode pattern connecting the two blind vias within the semiconductor IC 130.

[0099] The plurality of pillar electrodes 150 include Figure 1An example of the plurality of external connection terminals of the antenna connection terminal 100 and the high-frequency output terminal 120. The plurality of column electrodes 150 are respectively arranged on the main surface 91b of the module substrate 91 and extend from the main surface 91b along the z-axis. In addition, the plurality of column electrodes 150 respectively penetrate the resin member 93, and one end thereof is exposed from the resin member 93. The one end of the plurality of column electrodes 150 exposed from the resin member 93 is connected to an input / output terminal and / or a ground electrode and the like arranged on the mother substrate in the negative direction of the z-axis of the high-frequency module 1.

[0100] The resin member 93 is arranged on the main surface 91b of the module substrate 91 and covers the main surface 91b and the components on the main surface 91b. The resin member 93 has a function of ensuring the mechanical strength and the reliability of the components on the main surface 91b, such as moisture resistance. For example, the lower surface of the resin member 93 is planarized by cutting the lower surface of the high-frequency module 1, and the semiconductor IC 130 and the plurality of column electrodes 150 are exposed from the lower surface of the resin member 93.

[0101] The shield electrode layer 95 is, for example, a metal thin film formed by a sputtering method and is formed so as to cover the upper surface and the side surface of the resin member 92, the side surface of the module substrate 91, and the side surface of the resin member 93. The shield electrode layer 95 is set to a ground potential and suppresses the intrusion of external noise into the circuit components constituting the high-frequency module 1.

[0102] Note that, Figures 4 to 8 The structure of the high-frequency module 1 and the semiconductor IC 130 is an example and is not limited thereto.

[0103] For example, the semiconductor IC 130 can include at least two high-frequency elements and at least one via conductor arranged between the at least two high-frequency elements, and can not include other circuit elements. In this case, the at least two high-frequency elements are not limited to inductors, and can be, for example, capacitors.

[0104] In addition, for example, the semiconductor IC 130 can include a high-frequency circuit, the control circuit 70, and at least one via conductor 133 arranged between the high-frequency circuit and the control circuit 70. In this case, the high-frequency circuit can be any one of the low-noise amplifiers 21 and 22, the filter 65, and the switches 51 to 53, and is not limited thereto.

[0105] [1.3 Effects and the like]

[0106] As described above, the semiconductor IC 130 of the present embodiment includes a first high-frequency element (for example, the inductor 218 of the low-noise amplifier 21), a second high-frequency element (for example, the inductor 215 of the low-noise amplifier 22), and a first via conductor (for example, the via conductor 131) arranged between the first high-frequency element and the second high-frequency element and connected to a ground potential.

[0107] Thus, the first via conductor connected to the ground potential can be arranged between the first high-frequency element and the second high-frequency element. Therefore, the inductive coupling and / or the capacitive coupling between the first high-frequency element and the second high-frequency element in the semiconductor IC 130 can be suppressed. As a result, the electrical characteristics of the high-frequency paths to which the first high-frequency element and the second high-frequency element are connected, respectively, can be improved.

[0108] Further, for example, in the semiconductor IC 130 of the present embodiment, the first via conductor can also be a through-hole that penetrates the semiconductor IC 130 in the thickness direction of the semiconductor IC 130.

[0109] Thus, the first via conductor can be constituted by the through-hole. Therefore, the first via conductor can be interposed between the first high-frequency element and the second high-frequency element in the entire range in the thickness direction, and the coupling between the first high-frequency element and the second high-frequency element can be further suppressed.

[0110] Further, for example, in the semiconductor IC 130 of the present embodiment, the first high-frequency element can also be a first inductor, and the second high-frequency element can also be a second inductor.

[0111] Thus, the first via conductor can be arranged between the first inductor and the second inductor. In general, the coupling (particularly, the inductive coupling) is likely to occur between inductors, as compared to other high-frequency elements. Therefore, the coupling between the first inductor and the second inductor can be effectively suppressed by the first via conductor, and the electrical characteristics of the high-frequency paths to which the first inductor and the second inductor are connected, respectively, can be more effectively improved.

[0112] Further, for example, the semiconductor IC 130 of the present embodiment can be provided with low-noise amplifiers 21 and 22, and the first inductor can be included in the low-noise amplifier 21, and the second inductor can be included in the low-noise amplifier 22.

[0113] Thus, the coupling between the inductors included in the low-noise amplifiers 21 and 22 can be suppressed by the first via conductor, and the electrical characteristics (e.g., amplification characteristics, etc.) of the low-noise amplifiers 21 and 22, respectively, can be improved.

[0114] Further, for example, in the semiconductor IC 130 of the present embodiment, the first inductor can be an inductor 218 (choke inductor) of the low-noise amplifier 21, and the second inductor can be an inductor 215 (source inductor) of the low-noise amplifier 22.

[0115] Thus, the coupling between the choke inductor of the low-noise amplifier 21 and the source inductor of the low-noise amplifier 22 can be suppressed by the first via conductor, and the electrical characteristics of the low-noise amplifiers 21 and 22, respectively, can be improved. Thus, the coupling between the choke inductor of the low-noise amplifier 21 and the source inductor of the low-noise amplifier 22 can be suppressed by the first via conductor, and the electrical characteristics of the low-noise amplifiers 21 and 22, respectively, can be improved.

[0116] For example, the semiconductor IC 130 of this embodiment may include a third high-frequency element (eg, the inductor 654 of the filter 65 ) and a second via conductor (eg, the via conductor 132 ) disposed between the second and third high-frequency elements and connected to the ground potential.

[0117] Thus, a second via-hole conductor connected to the ground potential can be arranged between the second and third high-frequency elements. Therefore, in the semiconductor IC 130 , coupling between the second and third high-frequency elements can be suppressed, in addition to the first and second high-frequency elements.

[0118] Furthermore, for example, in the semiconductor IC 130 of this embodiment, the first high-frequency element may be the first inductor, the second high-frequency element may be the second inductor, and the third high-frequency element may be the third inductor.

[0119] This allows the first via-hole conductor to be placed between the first and second inductors, and the second via-hole conductor to be placed between the second and third inductors. Generally, coupling (particularly inductive coupling) is more likely to occur between inductors than with other high-frequency components. Therefore, the first via-hole conductor can effectively suppress coupling between the first and second inductors, and the second via-hole conductor can effectively suppress coupling between the second and third inductors.

[0120] In addition, for example, the semiconductor IC 130 of this embodiment may include low-noise amplifiers 21 and 22 and a filter 65 , the first inductor may be included in the low-noise amplifier 21 , the second inductor may be included in the low-noise amplifier 22 , and the third inductor may be included in the filter 65 .

[0121] Thus, the first via-hole conductor can suppress coupling between the inductors included in the low-noise amplifiers 21 and 22, and the second via-hole conductor can suppress coupling between the low-noise amplifier 22 and the inductor included in the filter 65. Consequently, the electrical characteristics of the low-noise amplifiers 21 and 22 and the filter 65 can be improved.

[0122] Furthermore, the high-frequency module 1 of the present embodiment includes a semiconductor IC 130 and a module substrate 91 on which the semiconductor IC 130 is arranged.

[0123] Thus, the high-frequency module 1 can be configured using the semiconductor IC 130 that can suppress coupling between high-frequency elements, and the electrical characteristics of the high-frequency module 1 can be improved.

[0124] Furthermore, for example, in the high-frequency module 1 of this embodiment, the module substrate 91 may have main surfaces 91 a and 91 b that are opposed to each other, the semiconductor IC 130 may be arranged on the main surface 91 b, and the high-frequency module 1 may include at least one surface-mount component (e.g., the switch 54 and the filters 61 to 64) arranged on the main surface 91 a, and a plurality of post electrodes 150 arranged on the main surface 91 b.

[0125] This allows components to be arranged on both surfaces of the module substrate 91 , thereby enabling miniaturization of the high-frequency module 1 .

[0126] Furthermore, for example, in the high-frequency module 1 of the present embodiment, at least one surface-mount component (eg, the filter 61 ) may be connected to the first via-hole conductor (eg, the via-hole conductor 131 ) and may overlap with each other in a plan view.

[0127] This allows the surface mount component to be grounded via the first via conductor in the semiconductor IC 130 and allows the surface mount component to overlap the first via conductor in a plan view. This shortens the ground wiring of the surface mount component and reduces degradation of electrical characteristics due to parasitic inductance.

[0128] Furthermore, for example, in the high-frequency module 1 of the present embodiment, at least one surface-mount component may include an elastic wave filter (eg, filters 61 to 64 ).

[0129] This allows the elastic wave filter to be grounded via the first via conductor in semiconductor IC 130 , and allows the elastic wave filter to overlap the first via conductor in a plan view. This shortens the ground wiring of the elastic wave filter and reduces degradation of electrical characteristics due to parasitic inductance.

[0130] In addition, for example, in the high-frequency module 1 of the present embodiment, at least one surface-mounted component may also include: a filter 61 having a passband including at least a portion of the communication frequency band A; a filter 62 having a passband including at least a portion of the communication frequency band B; a filter 63 having a passband including at least a portion of the communication frequency band C; and a filter 64 having a passband including at least a portion of the communication frequency band D. The semiconductor IC 130 may also include: a filter 65 having a passband including at least a portion of the communication frequency band A, at least a portion of the communication frequency band B, and at least a portion of the communication frequency band C. part and a passband of at least a part of the communication frequency band D; a low-noise amplifier 21, which includes an inductor 218 as a first high-frequency element; a low-noise amplifier 22, which includes an inductor 215 as a second high-frequency element; a switch 51, which is connected between the filters 61 and 62 and the low-noise amplifier 21; a switch 52, which is connected between the filters 63 and 64 and the low-noise amplifier 22; a switch 53, which is connected between the low-noise amplifiers 21 and 22 and the filter 65; and a control circuit 70, which controls the switches 51 to 53 and at least one of the low-noise amplifiers 21 and 22.

[0131] Thus, the semiconductor IC 130 can be used in the high-frequency module 1 that supports a plurality of communication frequency bands.

[0132] Furthermore, for example, in the high-frequency module 1 of the present embodiment, the semiconductor IC 130 may include a plurality of via-hole conductors 131 including a first via-hole conductor, and the plurality of via-hole conductors 131 may be arranged between the low-noise amplifiers 21 and 22 .

[0133] Thus, multiple via-hole conductors 131 can be arranged between low-noise amplifiers 21 and 22, and coupling between inductors 218 and 215 included in low-noise amplifiers 21 and 22 can be suppressed. Consequently, isolation between low-noise amplifiers 21 and 22 can be increased, and the electrical characteristics of each of low-noise amplifiers 21 and 22 can be improved.

[0134] Furthermore, for example, in the high-frequency module 1 of the present embodiment, the filter 65 may include the inductor 654 , and the semiconductor IC 130 may include a plurality of via-hole conductors 132 disposed between the low-noise amplifier 22 and the filter 65 .

[0135] Thus, multiple via-hole conductors 132 can be arranged between the low-noise amplifier 22 and the filter 65, thereby suppressing coupling between the low-noise amplifier 22 and the inductor 215 and the inductor 654 included in the filter 65. Consequently, the isolation between the low-noise amplifier 22 and the filter 65 can be increased, and the electrical characteristics of each of the low-noise amplifier 22 and the filter 65 can be improved.

[0136] Furthermore, for example, in the high-frequency module 1 of this embodiment, the semiconductor IC 130 may include a plurality of via-hole conductors 133 disposed between the control circuit 70 and at least one of the filter 65 , the switches 51 to 53 , and the low-noise amplifiers 21 and 22 .

[0137] This allows multiple via conductors 133 to be arranged between the control circuit 70 and the high-frequency circuit. This improves isolation between the control circuit 70 and the high-frequency circuit, and improves electrical characteristics of each of the control circuit 70 and the high-frequency circuit.

[0138] Furthermore, for example, in the high-frequency module 1 of the present embodiment, at least one of the filters 61 to 64 may be connected to at least one of the plurality of via-hole conductors 131 and may overlap with each other in a plan view.

[0139] Thus, at least one of filters 61-64 can be grounded via via-hole conductor 131 within semiconductor IC 130. Furthermore, filters 61-64 can be arranged so that at least one of filters 61-64 overlaps via-hole conductor 131 in a plan view. Consequently, the ground wiring for at least one of filters 61-64 can be shortened, and degradation of electrical characteristics due to parasitic inductance can be suppressed.

[0140] Furthermore, for example, in the high-frequency module 1 of the present embodiment, at least one of the filters 61 to 64 may be connected to at least one of the plurality of via-hole conductors 132 and may overlap with each other in a plan view.

[0141] This allows at least one of filters 61 to 64 to be grounded via via-hole conductor 132 within semiconductor IC 130. Furthermore, filters 61 to 64 can be arranged so that at least one of filters 61 to 64 overlaps via-hole conductor 132 in a plan view. Consequently, the ground wiring for at least one of filters 61 to 64 can be shortened, and degradation of electrical characteristics due to parasitic inductance can be suppressed.

[0142] Furthermore, for example, in the high-frequency module 1 of the present embodiment, at least one of the filters 61 to 64 may be connected to at least one of the plurality of via-hole conductors 133 and may overlap with each other in a plan view.

[0143] This allows at least one of filters 61 to 64 to be grounded via via-hole conductor 133 within semiconductor IC 130. Furthermore, filters 61 to 64 can be arranged so that at least one of filters 61 to 64 overlaps via-hole conductor 133 in a plan view. Consequently, the ground wiring for at least one of filters 61 to 64 can be shortened, and degradation of electrical characteristics due to parasitic inductance can be suppressed.

[0144] The semiconductor IC 130 of this embodiment includes a high-frequency circuit (eg, low-noise amplifiers 21 and 22 , switches 51 to 53 , filter 65 , etc.), a control circuit 70 , and a via conductor 133 disposed between the high-frequency circuit and the control circuit 70 and connected to the ground potential.

[0145] This allows via conductor 133 connected to the ground potential to be disposed between the high-frequency circuit and control circuit 70. This suppresses inductive coupling and / or capacitive coupling between the high-frequency circuit and the control circuit in semiconductor IC 130. Consequently, the electrical characteristics of the high-frequency circuit can be improved.

[0146] (Other Implementation Methods)

[0147] The semiconductor integrated circuit and high-frequency module of the present invention have been described above based on the embodiments. However, the high-frequency module and communication device of the present invention are not limited to the aforementioned embodiments. Other embodiments implemented by combining arbitrary components of the aforementioned embodiments, modifications of the aforementioned embodiments that occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the aforementioned high-frequency module and communication device are also encompassed by the present invention.

[0148] For example, in the circuit configurations of the high-frequency module and communication device of the above-described embodiments, other circuit elements and wiring may be inserted between the paths connecting the various circuit elements and signal paths disclosed in the accompanying drawings. For example, an impedance matching circuit may be inserted between switch 54 and each of filters 61 to 64. Furthermore, impedance matching circuits may be inserted, for example, between switch 51 and low-noise amplifier 21 and / or between switch 52 and low-noise amplifier 22. Impedance matching circuits can be formed, for example, from inductors and / or capacitors.

[0149] It should be noted that in the above embodiment, the high-frequency module 1 is a receiving circuit for receiving high-frequency signals, but is not limited thereto. For example, the high-frequency module 1 may also be a transmitting circuit for transmitting high-frequency signals or a transceiver circuit for transmitting and receiving high-frequency signals.

[0150] It should be noted that in the above embodiment, the multiple via conductors 131 to 133 formed in the semiconductor IC 130 are each cylindrical in shape, but this is not limited to this. For example, the multiple via conductors 131 to 133 may each be prismatic in shape. Furthermore, the multiple via conductors 131 may be arranged so that adjacent via conductors 131 contact each other. Furthermore, the multiple via conductors 131 may be connected to form a single wall. The same applies to the multiple via conductors 132 and 133.

[0151] It should be noted that, in the above embodiment, multiple post electrodes 150 are used as the multiple external connection terminals. However, the multiple external connection terminals are not limited to this. For example, multiple bump electrodes may be used instead of the multiple post electrodes 150. In this case, the main surface 91b of the module substrate 91 does not need to be covered by the resin member 93.

[0152] Industrial applicability

[0153] The present invention can be widely used in communication devices such as mobile phones as a semiconductor IC and a high-frequency module arranged at the front end.

[0154] Description of Reference Numerals

[0155] 1 high frequency module;

[0156] 2 antennas;

[0157] 3RFIC;

[0158] 4BBIC;

[0159] 5 communication devices;

[0160] 21, 22 low noise amplifier;

[0161] 51, 52, 53, 54 switches;

[0162] 61, 62, 63, 64, 65 filters;

[0163] 70 control circuit;

[0164] 91 module substrate;

[0165] 91a, 91b main surfaces;

[0166] 92, 93 resin components;

[0167] 95 shielding electrode layer;

[0168] 100 antenna connection terminal;

[0169] 120 high frequency output terminal;

[0170] 130 semiconductor integrated circuits (ICs);

[0171] 131, 132, 133, 911, 912, 913 via conductors;

[0172] 150 column electrodes;

[0173] 211, 651 input terminals;

[0174] 212, 652 output terminals;

[0175] 213, 214 Field-effect transistor (FET);

[0176] 215, 218, 653, 654 inductors;

[0177] 216, 217, 219, 210, 655, 656, 657 capacitors;

[0178] 511, 512, 513, 521, 522, 523, 531, 532, 533, 541, 542, 543, 544, 545 terminals;

[0179] 914 ground electrode pattern.

Claims

1. A high-frequency module comprising: A semiconductor integrated circuit comprising a first high-frequency element, a second high-frequency element, and a first via-hole conductor, wherein the first via-hole conductor is arranged between the first high-frequency element and the second high-frequency element and connected to a ground potential; and a module substrate on which the semiconductor integrated circuit is arranged, The module substrate has a first main surface and a second main surface facing each other. The semiconductor integrated circuit is arranged on the second main surface, The high-frequency module comprises: at least one component disposed on the first main surface; and a plurality of external connection terminals arranged on the second main surface, The at least one component is connected to the first via conductor and overlaps with the first via conductor in a plan view.

2. The high-frequency module according to claim 1, wherein The at least one component includes an elastic wave filter.

3. The high-frequency module according to claim 1 or 2, wherein: The at least one component comprises: a first filter having a passband including at least a portion of a first communications frequency band; a second filter having a passband that includes at least a portion of a second communications frequency band; a third filter having a passband that includes at least a portion of a third communications frequency band; and a fourth filter having a passband including at least a portion of a fourth communications frequency band, The semiconductor integrated circuit comprises: a fifth filter having a passband that includes the at least a portion of the first communications frequency band, the at least a portion of the second communications frequency band, the at least a portion of the third communications frequency band, and the at least a portion of the fourth communications frequency band; a first low-noise amplifier comprising a first inductor as the first high-frequency element; a second low-noise amplifier comprising a second inductor as the second high-frequency element; a first switch connected between the first filter, the second filter and the first low noise amplifier; a second switch connected between the third filter, the fourth filter and the second low noise amplifier; a third switch connected between the first low noise amplifier, the second low noise amplifier, and the fifth filter; and A control circuit controls at least one of the first switch, the second switch, the third switch, the first low noise amplifier, and the second low noise amplifier.

4. The high-frequency module according to claim 3, wherein: The semiconductor integrated circuit includes a plurality of first via conductors including the first via conductor. The plurality of first via conductors are arranged between the first low-noise amplifier and the second low-noise amplifier.

5. The high-frequency module according to claim 3, wherein The fifth filter comprises a third inductor, The semiconductor integrated circuit includes a plurality of second via-hole conductors arranged between the second low-noise amplifier and the fifth filter.

6. The high-frequency module according to claim 3, wherein The semiconductor integrated circuit includes a plurality of third via conductors arranged between the control circuit and at least one of the fifth filter, the first switch, the second switch, the third switch, the first low-noise amplifier, and the second low-noise amplifier.

7. The high-frequency module according to claim 4, wherein: At least one of the first filter, the second filter, the third filter, and the fourth filter is connected to at least one via-hole conductor among the plurality of first via-hole conductors and overlaps with each other in a plan view.

8. The high-frequency module according to claim 5, wherein At least one of the first filter, the second filter, the third filter, and the fourth filter is connected to at least one via-hole conductor among the plurality of second via-hole conductors and overlaps with each other in a plan view.

9. The high-frequency module according to claim 6, wherein: At least one of the first filter, the second filter, the third filter, and the fourth filter is connected to at least one via-hole conductor among the plurality of third via-hole conductors and overlaps with each other in a plan view.

10. The high-frequency module according to claim 1 or 2, wherein: The first via conductor is a through hole that penetrates the semiconductor integrated circuit in a thickness direction of the semiconductor integrated circuit.

11. The high-frequency module according to claim 1 or 2, wherein: The first high-frequency component is a first inductor, The second high-frequency element is a second inductor.

12. The high-frequency module according to claim 11, wherein The semiconductor integrated circuit includes a first low-noise amplifier and a second low-noise amplifier. The first inductor is included in the first low noise amplifier, The second inductor is included in the second low noise amplifier.

13. The high frequency module according to claim 12, wherein: The first inductor is a choke inductor of the first low noise amplifier, The second inductor is a source inductor of the second low noise amplifier.

14. The high-frequency module according to claim 1 or 2, wherein: The semiconductor integrated circuit comprises: a third high-frequency element; and The second via-hole conductor is arranged between the second high-frequency element and the third high-frequency element and is connected to a ground potential.

15. The high frequency module according to claim 14, wherein: The first high-frequency component is a first inductor, The second high-frequency component is a second inductor, The third high-frequency component is a third inductor.

16. The high frequency module according to claim 15, wherein The semiconductor integrated circuit includes a first low-noise amplifier, a second low-noise amplifier, and an LC filter. The first inductor is included in the first low noise amplifier, the second inductor is included in the second low noise amplifier, The third inductor is included in the LC filter.

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