An optical module

Abstract

The optical module provided by the application comprises a circuit board and an optical emission sub-module, the optical emission sub-module comprises a TO tube seat, a TO tube cap, a first boss, a ceramic substrate and an EML chip, the TO tube cap is covered on the TO tube seat; the ceramic substrate is arranged on the side surface platform of the first boss, a thin film resistor and a curved plating layer are arranged on the ceramic substrate, one end of the curved plating layer is electrically connected with the thin film resistor, and the other end is electrically connected with a grounding pin through wire bonding; the EML chip is arranged on the side surface of the ceramic substrate, one end of the EA area on the EML chip is electrically connected with a radio frequency pin on the TO tube seat through wire bonding, and the other end of the EA area is electrically connected with the thin film resistor through wire bonding. The thin film resistor and the curved plating layer are arranged on the ceramic substrate, a resistor is connected in the EA area loop of the EML chip, impedance matching can be realized according to the length change of the curved plating layer, the inductance is changed, the electrical parasitic effect is reduced by changing the inductance, and the bandwidth and the eye diagram are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optical fiber communication technology, and in particular to an optical module. BACKGROUND

[0002] With the development of new business and application modes such as cloud computing, mobile Internet, video, etc., the development and progress of optical communication technology becomes increasingly important. In optical communication technology, optical modules are tools for converting optical signals and electrical signals, and are one of the key devices in optical communication equipment. With the development of optical communication technology, the transmission rate of optical modules is continuously increasing.

[0003] The existing optical module usually refers to an integrated module for optical-electric conversion. For optical signal transmission, a laser chip is usually used to convert electrical signals from an upper computer into optical signals. In order to provide a flat optical bearing surface for the laser chip, the laser chip is usually arranged on a ceramic substrate, the surface of the ceramic substrate is coated with a conductive metal layer, and the laser chip is arranged on the conductive metal layer. The EA area of the EML (Electro-absorption Modulated Laser) chip needs to be connected to the RF line of the RF signal substrate, and then connected to the flexible circuit board and the circuit board through the PIN pin, and the other side of the EA curve of the EML chip is connected to the terminal resistance. The conventional EML laser signal line connection mode is gold wire bonding.

[0004] However, with the requirement and development of high speed, the difference in chip design leads to different junction resistances, which in turn leads to problems such as bandwidth reduction and eye diagram deterioration. SUMMARY

[0005] Embodiments of the present application provide an optical module to solve the problems of different junction resistances caused by the difference in EML chip design, leading to bandwidth reduction and eye diagram deterioration.

[0006] The optical module provided by the present application comprises:

[0007] a circuit board;

[0008] an optical transmitting sub-module electrically connected to the circuit board through a pin for transmitting an optical signal;

[0009] The optical transmitting sub-module comprises:

[0010] a TO tube seat;

[0011] a TO tube cap covering the TO tube seat;

[0012] a first boss arranged on the TO tube seat, comprising a bottom platform and a side platform connected to the bottom platform, and the bottom platform is fixed on the surface of the TO tube seat;

[0013] A ceramic substrate is arranged on the side platform, and a thin film resistor and a curved plating layer are arranged on the ceramic substrate. One end of the curved plating layer is electrically connected to one end of the thin film resistor, and the other end of the curved plating layer is electrically connected to a grounding pin on the TO can through wire bonding.

[0014] An EML chip is arranged on the side of the ceramic substrate. One end of an EA region of the EML chip is electrically connected to a radio frequency pin on the TO can through wire bonding, and the other end of the EA region is electrically connected to the other end of the thin film resistor through wire bonding.

[0015] The optical module provided in the application comprises a circuit board and an optical transmitting sub-module electrically connected to the circuit board through a pin. The optical transmitting sub-module comprises a TO can, a TO cap, a first boss, a ceramic substrate and an EML chip. The TO cap is arranged on the TO can, and the first boss is arranged on the TO can. The first boss comprises a bottom platform and a side platform connected to the bottom platform, and the bottom platform is fixed on the surface of the TO can. The ceramic substrate is arranged on the side platform, and a thin film resistor and a curved plating layer are arranged on the ceramic substrate. One end of the curved plating layer is electrically connected to one end of the thin film resistor, and the other end of the curved plating layer is electrically connected to a grounding pin on the TO can through wire bonding. The EML chip is arranged on the side of the ceramic substrate. One end of an EA region of the EML chip is electrically connected to a radio frequency pin on the TO can through wire bonding, and the other end of the EA region is electrically connected to the other end of the thin film resistor through wire bonding. That is, one end of the EA region of the EML chip is electrically connected to the radio frequency pin on the TO can through wire bonding, and the other end of the EA region is electrically connected to the thin film resistor, the curved plating layer and the grounding pin on the TO can through wire bonding in sequence. In the application, the thin film resistor and the curved plating layer are arranged on the ceramic substrate of the optical transmitting sub-module, the shape of the pattern on the ceramic substrate is changed, one end of the thin film resistor on the ceramic substrate is electrically connected to the curved plating layer, and when the thin film resistor is electrically connected to the EA region of the EML chip, the curved plating layer connected to the circuit is equivalent to a resistor, so that a resistor is added to the loop of the EML chip. The impedance matching can be realized according to the length change of the curved plating layer, so that the inductance can be changed, the parasitic effect can be reduced by changing the inductance, and thus a higher modulation bandwidth and a more flat frequency response can be provided. After reasonable combination, the best bandwidth and eye diagram can be obtained. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 1 is a schematic diagram of a connection relationship of an optical communication terminal;

[0017] Figure 2 FIG. 4 is a schematic diagram of an optical network unit structure;

[0018] Figure 3 FIG. 6 is a schematic diagram of an optical module structure provided in an embodiment of the application;

[0019] Figure 4A light module disassembly structure schematic diagram provided for an embodiment of the present application;

[0020] Figure 5 An assembly schematic diagram of a circuit board, a light emitting sub-module and a light receiving sub-module in a light module provided for an embodiment of the present application;

[0021] Figure 6 A TO structure schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application;

[0022] Figure 7 A partial disassembly schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application;

[0023] Figure 8 A sectional view of a light emitting sub-module in a light module provided for an embodiment of the present application;

[0024] Figure 9 A structure schematic diagram of a ceramic substrate in a light module provided for an embodiment of the present application;

[0025] Figure 10 A partial structure schematic diagram of a ceramic substrate in a light module provided for an embodiment of the present application;

[0026] Figure 11 A partial structure schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application;

[0027] Figure 12 A gold wire bonding connection schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application Figure 1 ;

[0028] Figure 13 A gold wire bonding connection schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application Figure 2 ;

[0029] Figure 14 A gold wire bonding connection schematic diagram of a light emitting sub-module in a light module provided for an embodiment of the present application Figure 3 ;

[0030] Figure 15 A partial structure schematic diagram of another light emitting sub-module in a light module provided for an embodiment of the present application;

[0031] Figure 16 A gold wire bonding connection schematic diagram of another light emitting sub-module in a light module provided for an embodiment of the present application Figure 1 ;

[0032] Figure 17 A gold wire bonding connection schematic diagram of another light emitting sub-module in a light module provided for an embodiment of the present application Figure 2 ;

[0033] Figure 18 Another gold wire bonding connection diagram of a light emitting sub-module in a light module according to an embodiment of the application Figure 3 . DETAILED DESCRIPTION

[0034] For the convenience of describing the technical solutions of the application, first, some concepts related to the application will be described.

[0035] The technical solutions in the embodiments of the application will be described clearly and completely in combination with the drawings in the embodiments of the application. Obviously, the described embodiments are only some of the embodiments of the application, but not all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the application.

[0036] In optical communication technology, light is used to carry information to be transmitted, and the optical signal carrying the information is transmitted to an information processing device such as a computer through an information transmission device such as an optical fiber or an optical waveguide to complete the transmission of information. Since the optical signal is transmitted through the optical fiber or the optical waveguide, it has the characteristics of passive transmission, so that low-cost and low-loss information transmission can be achieved. In addition, the signal transmitted by the information transmission device such as the optical fiber or the optical waveguide is an optical signal, and the signal that can be recognized and processed by the information processing device such as the computer is an electrical signal. Therefore, in order to establish an information connection between the information transmission device such as the optical fiber or the optical waveguide and the information processing device such as the computer, it is necessary to realize the mutual conversion between the electrical signal and the optical signal.

[0037] The optical module realizes the mutual conversion function between the optical signal and the electrical signal in the field of optical fiber communication technology. The optical module includes an optical port and an electrical port. The optical module realizes optical communication with the information transmission device such as the optical fiber or the optical waveguide through the optical port, and realizes electrical connection with the optical network terminal (for example, an optical modem) through the electrical port. The electrical connection is mainly used for power supply, I2C signal transmission, data signal transmission, and grounding. The optical network terminal transmits the electrical signal to the information processing device such as the computer through a network cable or wireless fidelity technology (Wi-Fi).

[0038] Figure 1 A connection relationship diagram of an optical communication system according to some embodiments. As shown in Figure 1 , the optical communication system mainly includes a remote server 1000, a local information processing device 2000, an optical network terminal 100, an optical module 200, an optical fiber 101, and a network cable 103.

[0039] One end of the optical fiber 101 is connected to the remote server 1000, and the other end is connected to the optical network terminal 100 through the optical module 200. The optical fiber itself can support long-distance signal transmission, for example, signal transmission of thousands of meters (6-8 kilometers), and theoretically, super-long distance transmission can be achieved if a repeater is used. Therefore, in a general optical communication system, the distance between the remote server 1000 and the optical network terminal 100 can usually reach thousands of meters, tens of kilometers, or hundreds of kilometers.

[0040] One end of the network cable 103 is connected to the local information processing device 2000, and the other end is connected to the optical network terminal 100. The local information processing device 2000 can be any one or several of the following devices: a router, a switch, a computer, a mobile phone, a tablet computer, a television, etc.

[0041] The physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100. The connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100.

[0042] The optical module 200 includes an optical port and an electrical port. The optical port is configured to be connected to the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional optical signal connection; the electrical port is configured to access the optical network terminal 100, so that the optical module 200 and the optical network terminal 100 establish a bidirectional electrical signal connection. The optical module 200 realizes the mutual conversion between optical signals and electrical signals, thereby establishing a connection between the optical fiber 101 and the optical network terminal 100. For example, the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and input into the optical network terminal 100, and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input into the optical fiber 101.

[0043] The optical network terminal 100 comprises a housing in the shape of a cuboid, and an optical module interface 102 and a network cable interface 104 arranged on the housing. The optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 and the optical module 200 establish a bidirectional electrical signal connection. The network cable interface 104 is configured to access the network cable 103, so that the optical network terminal 100 and the network cable 103 establish a bidirectional electrical signal connection. The optical module 200 and the network cable 103 establish a connection through the optical network terminal 100. For example, the optical network terminal 100 transmits electrical signals from the optical module 200 to the network cable 103, and transmits signals from the network cable 103 to the optical module 200, so that the optical network terminal 100, as a host of the optical module 200, can monitor the operation of the optical module 200. The host of the optical module 200 can also include an optical line terminal (OLT) in addition to the optical network terminal 100.

[0044] The remote server 1000 establishes a bidirectional signal transmission channel with the local information processing device 2000 through the optical fiber 101, the optical module 200, the optical network terminal 100, and the network cable 103.

[0045] Figure 2 The optical network terminal structure diagram according to some embodiments is shown for clearly showing the connection relationship between the optical module 200 and the optical network terminal 100. Figure 2 Only the structure of the optical network terminal 100 related to the optical module 200 is shown. As shown in the figure, Figure 2 The optical network terminal 100 further comprises a PCB circuit board 105 arranged in the housing, a cage 106 arranged on the surface of the PCB circuit board 105, and an electrical connector arranged inside the cage 106. The electrical connector is configured to access the electrical port of the optical module 200. The heat sink 107 has a fin or other protruding part to increase the heat dissipation area.

[0046] The optical module 200 is inserted into the cage 106 of the optical network terminal 100, and the optical module 200 is fixed by the cage 106. The heat generated by the optical module 200 is conducted to the cage 106, and then diffused through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 and the optical network terminal 100 establish a bidirectional electrical signal connection. In addition, the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional electrical signal connection.

[0047] Figure 3 The optical module structure diagram according to some embodiments is shown for, Figure 4 The optical module exploded structure diagram according to some embodiments is shown for, Figure 3 andFigure 4 As shown, the optical module 200 includes a housing, a circuit board 300 disposed in the housing, and an optical transceiver device;

[0048] The housing includes an upper housing 201 and a lower housing 202 . The upper housing 201 covers the lower housing 202 to form the housing having two openings 204 and 205 . The outer contour of the housing is generally a square.

[0049] In some embodiments, the lower shell 202 includes a base plate and two lower side plates located on both sides of the base plate and arranged perpendicularly to the base plate; the upper shell 201 includes a cover plate and two upper side plates located on both sides of the cover plate and arranged perpendicularly to the cover plate, and is combined with two side walls and two side plates to achieve the upper shell 201 covering the lower shell 202.

[0050] The direction of the line connecting the two openings 204 and 205 may be consistent with the length direction of the optical module 200, or may be inconsistent with the length direction of the optical module 200. For example, the opening 204 is located at the end of the optical module 200 ( Figure 3 The opening 205 is also located at the end of the optical module 200 ( Figure 3 Alternatively, opening 204 is located at the end of optical module 200, while opening 205 is located on the side of optical module 200. Opening 204 is an electrical port, through which the gold finger of circuit board 300 extends and is inserted into a host computer (such as optical network terminal 100); opening 205 is an optical port, configured to receive an external optical fiber 101, so that optical fiber 101 connects to the optical transceiver device inside optical module 200.

[0051] The combined assembly of upper and lower housings 201 and 202 facilitates the installation of components such as the circuit board 300 and optical transceivers within the housing, with the upper and lower housings 201 and 202 providing encapsulation and protection for these components. Furthermore, during assembly of components such as the circuit board 300, the positioning, heat dissipation, and electromagnetic shielding components of these components are easily positioned, facilitating automated production.

[0052] In some embodiments, the upper shell 201 and the lower shell 202 are generally made of metal materials, which are conducive to electromagnetic shielding and heat dissipation.

[0053] In some embodiments, the optical module 200 further includes an unlocking component 203 located on the outer wall of its housing. The unlocking component 203 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

[0054] For example, the unlocking component 203 is located on the outer wall of the two lower side plates of the lower shell 202, and includes a clamping component matched with the cage of the host (for example, the cage 106 of the optical network terminal 100). When the optical module 200 is inserted into the cage of the host, the clamping component of the unlocking component 203 fixes the optical module 200 in the cage of the host; when the unlocking component 203 is pulled, the clamping component of the unlocking component 203 moves, thereby changing the connection relationship between the clamping component and the host, so as to release the clamping relationship between the optical module 200 and the host, and thus the optical module 200 can be pulled out of the cage of the host.

[0055] The circuit board 300 includes circuit traces, electronic components (such as capacitors, resistors, transistors, MOS tubes), and chips (such as MCUs, laser drive chips, limiting amplifier chips, clock data recovery CDR, power management chips, data processing chips DSP), etc.

[0056] The circuit board 300 connects the above-mentioned devices in the optical module 200 together according to the circuit design through the circuit traces, to realize the functions of power supply, electrical signal transmission, and grounding, etc.

[0057] The circuit board 300 is generally a hard circuit board. Due to the relatively hard material of the hard circuit board, the hard circuit board can also realize the bearing function, such as the hard circuit board can stably bear the chips; the hard circuit board can also be inserted into the electrical connector in the cage of the host. In some embodiments disclosed in the present application, a metal pin / gold finger is formed on the surface of the end of one side of the hard circuit board, which is used for connecting with the electrical connector. These are not convenient to realize by the flexible circuit board.

[0058] The flexible circuit board is also used in some optical modules. The flexible circuit board is generally used in cooperation with the hard circuit board, such as the flexible circuit board is used to connect between the hard circuit board and the optical transceiver device, as a supplement of the hard circuit board.

[0059] Figure 5 The assembly schematic diagram of the circuit board and the optical transceiver device in the optical module provided by the embodiments of the present application is shown in the figure. Figure 5 As shown in the figure, the optical transceiver device includes an optical transmitting sub-module 400 and an optical receiving sub-module 500, which are respectively used to realize the transmission of optical signals and the reception of optical signals. The optical transmitting sub-module 400 generally includes an optical transmitter, a lens, and a light detector, and the lens and the light detector are respectively located on different sides of the optical transmitter. The front and back sides of the optical transmitter respectively emit light beams, and the lens is used to converge the light beams emitted by the front side of the optical transmitter, so that the light beams emitted by the optical transmitter are convergent light, to facilitate coupling to the external optical fiber; the light detector is used to receive the light beams emitted by the back side of the optical transmitter, to detect the optical power of the optical transmitter. Specifically, the light emitted by the optical transmitter enters the optical fiber after being converged by the lens, and at the same time, the light detector detects the light emitting power of the optical transmitter, to ensure the constancy of the light emitting power of the optical transmitter.

[0060] Figure 6 A structure diagram of a light emitting sub-module in a light module provided by an embodiment of the present application is shown in the figure, Figure 7 A structure diagram of a light emitting sub-module in a light module provided by an embodiment of the present application is shown in the figure, Figure 8 A structure diagram of a light emitting sub-module in a light module provided by an embodiment of the present application is shown in the figure. As shown in the figure, Figure 6 、 Figure 7 、 Figure 8 The light emitting sub-module 400 adopts a coaxial TO package, the light emitter is an EML chip 440, the light detector 4020 is a photodiode, and further includes a TO tube base 401 and a TO tube cap 402 covering the TO tube base 401, the EML chip 440, the photodiode 4020 and other optoelectronic devices are placed on the surface of the TO tube base 401. The TO tube cap 402 has a light window for light to pass through, and further has a lens 403 arranged in the TO tube cap 402, the lens 403 is arranged opposite to the light window of the TO tube cap 402; the TO tube base 401 and the TO tube cap 402 encapsulate the EML chip 440, the lens 403, the photodiode 4020 and other optoelectronic devices in a sealed cavity.

[0061] The TO tube base 401 has a plurality of pins, the pins pass through the TO tube base 401 and protrude from the surface of the TO tube base 401, and the pins are wrapped by glass to realize insulation between the pins and the TO tube base 401. The optoelectronic devices are sealed between the TO tube base 401 and the TO tube cap 402, and establish electrical connection with the outside through the pins passing through the TO tube base 401.

[0062] In order to facilitate carrying the EML chip 440 and the photodiode 4020, the TO tube base 401 further has a first boss 420, the first boss 420 is an L-shaped boss, which includes a bottom platform parallel to the TO tube base 401 and a side platform perpendicular to the TO tube base 401, the bottom platform can be fixed on the surface of the TO tube base 401, and the photodiode 4020 is fixed on the bottom platform. The side platform is provided with a ceramic substrate 450, which is parallel to the side platform, and the EML chip 440 is fixed on the ceramic substrate 450, and the photodiode 4020 is located directly below the EML chip 440 to collect the light beams emitted backward by the EML chip 440.

[0063] In some embodiments, the TO base 401 is further provided with a semiconductor refrigerator 410, which is located between the TO base 401 and the first boss 420, and the first boss 420 is arranged on the refrigeration surface of the semiconductor refrigerator 410. In this way, the heat generated by the EML chip 440 is transferred to the ceramic substrate 450, the ceramic substrate 450 transfers the heat to the first boss 420, the first boss 420 transfers the heat to the semiconductor refrigerator 410, and the heat generated by the semiconductor refrigerator 410 is transferred to the TO base 401. In this way, the heat dissipation efficiency of the EML chip 440 can be improved.

[0064] In some embodiments, the light detector 4020 can be adhered to the bottom platform of the first boss 420 using epoxy conductive adhesive, the semiconductor refrigerator 410 can be adhered to the surface of the TO base 401 using epoxy conductive adhesive, the ceramic substrate 450 and the EML chip 440 can be welded using AuSn eutectic welding process, and the TO cap 402 and the TO base 401 can be resistance welded in an environment with a dew point lower than -40 degrees.

[0065] Figure 9 A structure diagram of a ceramic substrate in a light module according to an embodiment of the present application is provided. As shown in Figure 9 The front surface of the ceramic substrate 450 is designed in a pattern and a gold layer is formed by electron beam evaporation. The pre-solder area 4520 in the center region is a solder layer formed by electron beam evaporation on the basis of the gold layer, and is used to complete eutectic welding with the EML chip 440. A T-shaped gold layer 4510 is arranged on the right side of the ceramic substrate 450. The T-shaped gold layer 4510 is a microstrip line and can be gold wire bonded with the radio frequency pin. That is, one side of the EML chip 440 can be electrically connected to the T-shaped gold layer 4510 on the ceramic substrate 450 by wire bonding. A thin film resistor is arranged on the left side of the ceramic substrate 450. The thin film resistor can be electrically connected to the EML chip 440 by wire bonding.

[0066] One end of the thin film resistor is provided with a pad, and the EA area of the EML chip 440 can be connected to the pad at one end of the thin film resistor by wire bonding, so as to realize gold wire bonding connection between the EML chip 440 and the thin film resistor. The other end of the thin film resistor is provided with a curved plating layer 4620, which can be electrically connected to the ground pin on the TO base 401 by gold wire bonding.

[0067] The EA area of the EML chip 440 is connected to one end of the thin-film resistor, and the bent plating layer 4620 at the other end of the thin-film resistor is connected to the ground pin on the TO tube seat 401. After the connection, the bent plating layer is equivalent to a wire due to the connection of the bent plating layer, and the resistance in the circuit connection is increased. The impedance matching can be achieved according to the length change of the bent plating layer, and the inductance can be changed, the parasitic effect can be reduced by changing the inductance, and thus the bandwidth and eye diagram can be improved.

[0068] In some embodiments, the thin-film resistor provided on the ceramic substrate 450 can include a first thin-film resistor 460 and a second thin-film resistor 470. The first thin-film resistor 460 is close to the pre-solder area 4520, one end of the first thin-film resistor 460 is provided with a first pad 4610, and the other end of the first thin-film resistor 460 is electrically connected to the bent plating layer 4620. One end of the second thin-film resistor 470 is provided with a second pad 4710, and the other end of the second thin-film resistor 470 is electrically connected to the bent plating layer 4620. The first thin-film resistor 460 or the second thin-film resistor 470 or the first thin-film resistor 460 and the second thin-film resistor 470 in parallel after connection can be connected to the loop of the EML chip 440. The resistance value of the first thin-film resistor 460 is smaller than that of the second thin-film resistor 470, and the EA area of the EML chip 440 can be electrically connected to the corresponding thin-film resistor according to the requirement.

[0069] Figure 10 A partial structure schematic diagram of the ceramic substrate in the optical module provided by the embodiments of the present application is provided. As shown in Figure 10 The bent plating layer 4620 on the ceramic substrate 450 includes a first segment plating layer 4630, a bent segment plating layer 4640, and a second segment plating layer 4650 connected in one body. The first segment plating layer 4630 and the second segment plating layer 4650 are oppositely arranged. One end of the bent segment plating layer 4640 is connected to one end of the first segment plating layer 4630, and the other end is connected to one end of the second segment plating layer 4650. An opening is provided between the other end of the first segment plating layer 4630 and the other end of the second segment plating layer 4650, and the two are not connected.

[0070] In some embodiments, the bent plating layer 4620 on the ceramic substrate 450 can be periodically bent, and the first segment plating layer 4630, the bent segment plating layer 4640, and the second segment plating layer 4650 constitute a periodic bent plating layer.

[0071] In some embodiments, the first plating layer 4630 and the second plating layer 4650 can both be straight segments, and the first plating layer 4630 and the second plating layer 4650 can be symmetrically arranged about the central axis of the curved plating layer 4640. Specifically, the first plating layer 4630 and the second plating layer 4650 can both be parallel to the central axis of the curved plating layer 4640, and the curved plating layer 4640 can be a semicircular plating layer. That is, the first plating layer 4630 and the second plating layer 4650 are arranged horizontally, and the plating layers within a cycle form a U-shaped structure.

[0072] In some embodiments, the first section of the plating layer 4630 near the thin film resistor is electrically connected to the first thin film resistor 460 and the second thin film resistor 470, so that when the thin film resistor is connected to the circuit, the curved plating layer 4620 is connected to the loop of the EML chip 440.

[0073] Figure 11 This is a schematic diagram of the partial structure of the light emitting submodule in the optical module provided in the embodiment of the present application. Figure 11 As shown, a second boss 430 is further provided on the TO tube holder 401 in the optical transmission sub-module 400 provided in the embodiment of the present application. The second boss 430 is perpendicular to the surface of the TO tube holder 401, and a radio frequency signal substrate 4310 is provided on the front of the second boss 430. The radio frequency signal substrate 4310 and the second boss 430 can be welded using a eutectic welding process.

[0074] The front of the RF signal substrate 4310 is plated with a gold layer using electron beam evaporation according to a patterned design. The side of the RF signal substrate 4310 facing away from the TO socket 401 can be connected to the T-shaped gold layer 4510 on the ceramic substrate 450 via wire bonding. The side of the RF signal substrate 4310 facing the TO socket 401 is designed to be eutectic-bonded to the RF pins on the TO socket 401 using a pre-applied solder sheet for RF signal connection. In other words, the RF pins on the TO socket 401 provide signal input to the EML chip 440 via the RF signal substrate 4310, the T-shaped gold layer 4510 on the ceramic substrate 450, and wire bonding.

[0075] In some embodiments, a thermistor 480, a first capacitor 490, and a second capacitor 4010 are further disposed on the front surface of the first boss 420. The thermistor 480, the first capacitor 490, and the second capacitor 4010 can be bonded to the first boss 420 using epoxy conductive adhesive. The thermistor 480 can be electrically connected to the ceramic substrate 450 via wire bonding, and the thermistor 480 can be electrically connected to the ground pin on the TO socket 401 via gold wire bonding.

[0076] In some embodiments, the first capacitor 490 and the second capacitor 4010 are ground capacitors, that is, one end of the first capacitor 490 and the second capacitor 4010 can be connected to the bent plated layer 4620 of one end of the thin film resistor through a wire, and the other end of the first capacitor 490 and the second capacitor 4010 can be electrically connected to the ground pin of the TO can 401 through a gold wire bonding, so that the EA area on the EML chip 440 can be electrically connected to the ground pin of the TO can 401 through the first capacitor 490 and the second capacitor 4010.

[0077] In some embodiments, the negative electrode of the photodetector 4020 can be electrically connected to the ceramic substrate 450 through a gold wire, and the positive electrode of the photodetector 4020 can be electrically connected to the corresponding pin of the TO can 401 through a gold wire, so as to realize the electrical connection between the photodetector 4020 and the pin.

[0078] Figure 12 Connection diagram of gold wire bonding of light emitting sub-module in light module provided by embodiments of the present application Figure 1 As shown in Figure 12 , after the EML chip 440 and the pre-solder area 4520 on the ceramic substrate 450 are soldered together by using a eutectic soldering process, one end of the EA area on the EML chip 440 is electrically connected to the T-shaped gold plated layer 4510 on the ceramic substrate 450 through a wire, the T-shaped gold plated layer 4510 is electrically connected to one end of the radio frequency signal substrate 4310 on the second boss 430 through a wire, the other end of the radio frequency signal substrate 4310 is soldered to the corresponding pin of the TO can 401 through a pre-solder sheet by a eutectic soldering process, for the connection of the radio frequency signal; the other end of the EA area on the EML chip 440 can be electrically connected to the first bonding pad 4610 of the first thin film resistor 460 on the ceramic substrate 450 through the first wire 404, the bent plated layer 4620 at the other end of the first thin film resistor 460 is electrically connected to the first capacitor 490 or the second capacitor 4010 on the first boss 420 through a wire, and the first capacitor 490 or the second capacitor 4010 is electrically connected to the ground pin of the TO can 401 through a wire.

[0079] In some embodiments, the resistance value of the first thin film resistor 460 electrically connected to the EML chip 440 is generally 50Ω.

[0080] In this way, the EA area on the EML chip 440 is electrically connected to the ground pin of the TO can 401 through the first thin film resistor 460, the bent plated layer 4620 and the ground capacitor, and the bent plated layer 4620 is equivalent to a wire, which can increase the length of the gold wire in the circuit by the bent plated layer 4620, and the impedance matching can be realized by changing the length of the bent plated layer 4620, so as to change the inductance in the circuit connection, improve the electrical parasitic effect by adjusting the inductance, and thus improve the bandwidth and the eye diagram.

[0081] In some embodiments, according to actual needs, one end of the EA region on the EML chip 440 is electrically connected to the T-shaped gold-plated layer 4510 on the ceramic substrate 450 by wire bonding, the T-shaped gold-plated layer 4510 is electrically connected to one end of the radio frequency signal substrate 4310 on the second boss 430 by wire bonding, the other end of the radio frequency signal substrate 4310 is soldered to the corresponding pin of the TO can 401 by pre-placed soldering sheet eutectic welding, for the connection of the radio frequency signal; the other end of the EA region on the EML chip 440 can also be electrically connected to the second bonding pad 4710 of the second thin film resistor 470 on the ceramic substrate 450 by wire bonding, the curved plating layer 4620 at the other end of the second thin film resistor 470 is electrically connected to the first capacitor 490 or the second capacitor 4010 on the first boss 420 by wire bonding, and the first capacitor 490 or the second capacitor 4010 is electrically connected to the ground pin on the TO can 401 by wire bonding.

[0082] In some embodiments, the resistance value of the first thin film resistor 460 is generally smaller than the resistance value of the second thin film resistor 470, and the resistance value of the second thin film resistor 470 is generally 130Ω.

[0083] Figure 13 The connection of the gold wire bonding in the optical transmitting sub-module in the optical module provided by the embodiments of the present application Figure 2 As shown in Figure 13 , after the EML chip 440 and the pre-placed soldering area on the ceramic substrate 450 are welded together by eutectic welding process, one end of the EA region on the EML chip 440 is electrically connected to the T-shaped gold-plated layer 4510 on the ceramic substrate 450 by wire bonding, the T-shaped gold-plated layer 4510 is electrically connected to one end of the radio frequency signal substrate 4310 on the second boss 430 by wire bonding, the other end of the radio frequency signal substrate 4310 is soldered to the corresponding pin of the TO can 401 by pre-placed soldering sheet eutectic welding, for the connection of the radio frequency signal; when the other end of the EA region on the EML chip 440 is electrically connected to the thin film resistor, the resistance value of the EML chip 440 that needs to be connected may be small, at this time, the first thin film resistor 460 and the second thin film resistor 470 can be connected in parallel to obtain a thin film resistor with a smaller resistance value.

[0084] Specifically, the other end of the EA region on the EML chip 440 is electrically connected to the first bonding pad 4610 of the first thin film resistor 460 on the ceramic substrate 450 by the first wire 404, the first bonding pad 4610 of the first thin film resistor 460 is electrically connected to the second bonding pad 4710 of the second thin film resistor 470 by the second wire 405, and the other end of the first thin film resistor 460 and the second thin film resistor 470 are both electrically connected to the curved plating layer 4620, to realize the parallel connection of the first thin film resistor 460 and the second thin film resistor 470.

[0085] One end of the curved plating layer 4620 on the ceramic substrate 450 is electrically connected with the first thin-film resistor 460 and the second thin-film resistor 470, and the other end of the curved plating layer 4620 is electrically connected with the first capacitor 490 or the second capacitor 4010 through wire bonding, and the first capacitor 490 or the second capacitor 4010 is electrically connected with the ground pin on the TO can 401 through wire bonding.

[0086] In some embodiments, the resistance value of the first thin-film resistor 460 is less than the resistance value of the second thin-film resistor 470, and the resistance value of the first thin-film resistor 460 is 50Ω, and the resistance value of the second thin-film resistor 470 is 130Ω.

[0087] In this way, the EA area on the EML chip 440 is electrically connected with the ground pin on the TO can 401 through the first thin-film resistor 460, the second thin-film resistor 470, the curved plating layer 4620, and the transition of the ground capacitor, and the curved plating layer 4620 is equivalent to a wire, and the length of the gold wire in the circuit can be increased through the curved plating layer 4620, and impedance matching can be achieved according to the length change of the curved plating layer 4620, so as to change the inductance in the circuit connection, improve the electrical parasitic effect by adjusting the inductance, and thus improve the bandwidth and eye diagram.

[0088] Figure 14 Connection diagram of gold wire bonding in the optical transmitting sub-module in the optical module provided by the embodiments of the present application Figure 3 As shown in Figure 14 , after the EML chip 440 and the preset solder area on the ceramic substrate 450 are welded together by using the eutectic soldering process, one end of the EA area on the EML chip 440 is electrically connected with the T-shaped gold-plated layer 4510 on the ceramic substrate 450 through wire bonding, the T-shaped gold-plated layer 4510 is electrically connected with one end of the radio frequency signal substrate 4310 on the second boss 430 through wire bonding, the other end of the radio frequency signal substrate 4310 is eutectically soldered to the corresponding pin of the TO can 401 through a preset solder sheet, and is used for the connection of the radio frequency signal; the other end of the EA area on the EML chip 440 is electrically connected with the first pad 4610 of the first thin-film resistor 460 through the first wire 404, the first pad 4610 is electrically connected with the second pad 4710 of the second thin-film resistor 470 through the second wire 405, and the other ends of the first thin-film resistor 460 and the second thin-film resistor 470 are both electrically connected with the curved plating layer 4620, so as to realize the parallel connection of the first thin-film resistor 460 and the second thin-film resistor 470.

[0089] The two opposite sides of the curved plating layer 4620 are provided with limiting areas 407, and a gold wire 406 is arranged between the two limiting areas 407. One end of the gold wire 406 is electrically connected with one limiting area 407, and the other end of the gold wire 406 is electrically connected with the other limiting area 407 across the curved plating layer 4620. When the curved plating layer 4620 is connected into the loop of the EML chip 440, the length of the curved plating layer 4620 and the gold wire 406 across the curved plating layer 4620 can change the inductance in the circuit connection, and the electrical parasitic effect is improved by adjusting the inductance, so as to improve the bandwidth and the eye diagram.

[0090] In some embodiments, at least two gold wires 406 can be arranged between the two limiting areas 407, and the plurality of gold wires 406 are arranged side by side away from one side of the thin film resistor in sequence, that is, the plurality of gold wires 406 are arranged in sequence from top to bottom. By changing the number of gold wires 406, the inductance can be changed, and the best bandwidth and eye diagram can be obtained after reasonable combination.

[0091] In the optical module provided by the embodiments of the present application, the thin film resistor and the curved plating layer are arranged on the ceramic substrate of the optical transmitting sub-module, the shape of the pattern on the ceramic substrate is changed, the curved plating layer is electrically connected with one end of the thin film resistor on the ceramic substrate, when the thin film resistor is electrically connected with the EML chip, the curved plating layer connected into the circuit is equivalent to a wire, the length of the wire connected into the circuit is increased by the curved gold plating layer, the length of the wire in the circuit is changed, the impedance matching is realized according to the length change of the curved plating layer 4620, the inductance is changed, the electrical parasitic effect is reduced, and thus a higher modulation bandwidth and a more flat frequency response are provided, and the best bandwidth and eye diagram can be obtained after reasonable combination.

[0092] In some embodiments, in addition to adjusting the inductance by changing the shape of the pattern on the ceramic substrate 450 and the length of the wire, the inductance can also be changed by increasing the number of resistors and capacitors on the ceramic substrate 450, and the best bandwidth and eye diagram can be obtained after reasonable combination.

[0093] Figure 15 Another partial structure schematic diagram of an optical transmitting sub-module in the optical module provided by the embodiments of the present application is shown in FIG. 6. As shown in FIG. 6, the optical transmitting sub-module comprises a ceramic substrate 450, a thin film resistor 460, a gold wire 406 and a curved plating layer 4620. Figure 15As shown, the front side of the ceramic substrate 450 is designed in a pattern by e-book evaporation to form a layer of gold plating, and the center area is designed as a pre-soldering area 4520, which is a layer of solder formed by e-book evaporation on the basis of the gold plating, and is used to complete the eutectic welding with the EML chip 440. A T-shaped gold plating layer 4510 is arranged on the right side of the ceramic substrate 450, which is a microstrip line and can be gold wire bonded with the radio frequency pin, that is, one side of the EML chip 440 can be electrically connected to the T-shaped gold plating layer 4510 on the ceramic substrate 450 by wire bonding. A plurality of thin film resistors and capacitors 4030 are arranged on the left side of the ceramic substrate 450, and the plurality of thin film resistors can be electrically connected to the EML chip 440 by wire bonding alone or in parallel, and the other end of the thin film resistor is electrically connected to the capacitor 4030.

[0094] One end of the thin film resistor is provided with a pad, and the EA area of the EML chip 440 can be connected to the pad at one end of the thin film resistor by wire bonding to realize the gold wire bonding connection between the EML chip 440 and one end of the thin film resistor. The other end of the thin film resistor is provided with a capacitor pad 4720, which is wrapped around the outer periphery of the capacitor 4030, and one end of the capacitor 4030 is electrically connected to the capacitor pad 4720, and the other end of the capacitor 4030 can be electrically connected to the ground pin on the TO can 401 by wire bonding.

[0095] When the EA area of the EML chip 440 is electrically connected to the pad at one end of the thin film resistor by wire bonding, the thin film resistor and the capacitor 4030 are connected into the loop of the EML chip 440 to connect the resistor and the capacitor in the loop of the EML chip 440, and impedance matching can be achieved according to the connection of different resistors and capacitors, so as to change the inductance.

[0096] In some embodiments, the thin film resistors arranged on the ceramic substrate 450 can include a first thin film resistor 460 and a second thin film resistor 470, the first thin film resistor 460 is close to the pre-soldering area 4520, one end of the first thin film resistor 460 is provided with a first pad 4610, one end of the second thin film resistor 470 is provided with a second pad 4710, and the other end of the first thin film resistor 460 and the other end of the second thin film resistor 470 are electrically connected to the capacitor pad 4720. The first thin film resistor 460 or the second thin film resistor 470 or the first thin film resistor 460 and the second thin film resistor 470 connected in parallel can be connected into the loop of the EML chip 440. The resistance value of the first thin film resistor 460 is smaller than the resistance value of the second thin film resistor 470, and the EA area of the EML chip 440 can be electrically connected to the corresponding thin film resistor according to the requirement.

[0097] Figure 16 Another gold wire bonding connection diagram of the light emitting sub-module in the optical module provided by the embodiments of the present application Figure 1 As shown in FIG. 8, the front side of the ceramic substrate 450 is designed in a pattern by e-book evaporation to form a layer of gold plating, and the center area is designed as a pre-soldering area 4520, which is a layer of solder formed by e-book evaporation on the basis of the gold plating, and is used to complete the eutectic welding with the EML chip 440. A T-shaped gold plating layer 4510 is arranged on the right side of the ceramic substrate 450, which is a microstrip line and can be gold wire bonded with the radio frequency pin, that is, one side of the EML chip 440 can be electrically connected to the T-shaped gold plating layer 4510 on the ceramic substrate 450 by wire bonding. A plurality of thin film resistors and capacitors 4030 are arranged on the left side of the ceramic substrate 450, and the plurality of thin film resistors can be electrically connected to the EML chip 440 by wire bonding alone or in parallel, and the other end of the thin film resistor is electrically connected to the capacitor 4030. Figure 16As shown, after the EML chip 440 and the pre-set solder area 4520 on the ceramic substrate 450 are welded together using a eutectic welding process, one end of the EA area on the EML chip 440 is electrically connected to the T-shaped gold-plated layer 4510 on the ceramic substrate 450 through a wire bonding process, and the T-shaped gold-plated layer 4510 is electrically connected to one end of the RF signal substrate 4310 on the second boss 430 through a wire bonding process. The other end of the RF signal substrate 4310 is eutectically welded to the corresponding pin of the TO tube socket 401 through a pre-set solder sheet. , used for connecting RF signals; the other end of the EA area on the EML chip 440 can be electrically connected to the first pad 4610 of the first thin-film resistor 460 on the ceramic substrate 450 through the first bonding wire 404, the other end of the first thin-film resistor 460 is electrically connected to the capacitor 4030 through the capacitor pad 4720, the other end of the capacitor 4030 is electrically connected to the first capacitor 490 on the first boss 420 through the bonding wire, and the first capacitor 490 is electrically connected to the ground pin on the TO tube holder 401 through the bonding wire.

[0098] The first thin-film resistor 460 is electrically connected to the EA area of ​​the EML chip 440 separately, and the other end of the first thin-film resistor 460 is electrically connected to the capacitor 4030 through the capacitor pad 4720, so as to connect the first thin-film resistor 460 and the capacitor 4030 in the loop of the EML chip 440. The inductance can be changed according to the resistance value of the first thin-film resistor 460 and the capacitor 4030. By adjusting the inductance, the electrical parasitic effect is improved, thereby improving the bandwidth and eye diagram.

[0099] Figure 17 Schematic diagram of the gold wire bonding connection of another optical transmission sub-module in the optical module provided in the embodiment of the present application Figure 2 .like Figure 17 As shown, after the EML chip 440 and the pre-set solder area 4520 on the ceramic substrate 450 are welded together using a eutectic welding process, one end of the EA area on the EML chip 440 is electrically connected to the T-shaped gold-plated layer 4510 on the ceramic substrate 450 through a wire bonding process, and the T-shaped gold-plated layer 4510 is electrically connected to one end of the RF signal substrate 4310 on the second boss 430 through a wire bonding process. The other end of the RF signal substrate 4310 is eutectically welded to the corresponding tube of the TO tube holder 401 through a pre-set solder sheet. The other end of the EA area on the EML chip 440 is electrically connected to the second pad 4710 of the second thin film resistor 470 on the ceramic substrate 450 through bonding, and the other end of the second thin film resistor 470 is electrically connected to the capacitor 4030 through the capacitor pad 4720. The other end of the capacitor 4030 is electrically connected to the first capacitor 490 on the first boss 420 through bonding, and the first capacitor 490 is electrically connected to the ground pin on the TO tube holder 401 through bonding.

[0100] The second thin film resistor 470 is electrically connected to the EA area of the EML chip 440 alone, and the other end of the second thin film resistor 470 is electrically connected to the capacitor 4030 through the capacitor pad 4720, so as to connect the second thin film resistor 470 and the capacitor 4030 in the loop of the EML chip 440. According to the resistance value of the second thin film resistor 470 and the capacitor 4030, the inductance can be changed, the electrical parasitic effect is improved by adjusting the inductance, so as to improve the bandwidth and the eye diagram.

[0101] Figure 18 Another gold wire bonding connection diagram of a light emitting sub-module in a light module provided by the embodiment of the present application Figure 3 As shown in Figure 18 , after the EML chip 440 and the pre-solder area 4520 on the ceramic substrate 450 are soldered together by using the eutectic soldering process, one end of the EA area of the EML chip 440 is electrically connected to the T-shaped gold-plated layer 4510 on the ceramic substrate 450 through wire bonding, the T-shaped gold-plated layer 4510 is electrically connected to one end of the radio frequency signal substrate 4310 on the second boss 430 through wire bonding, the other end of the radio frequency signal substrate 4310 is soldered to the corresponding pin of the TO can 401 through a pre-solder sheet, and the radio frequency signal is connected; the other end of the EA area of the EML chip 440 can also be electrically connected to the first pad 4610 of the first thin film resistor 460 on the ceramic substrate 450 through the first wire 404, the first pad 4610 is electrically connected to the second pad 4710 of the second thin film resistor 470 through the second wire 405, the other ends of the first thin film resistor 460 and the second thin film resistor 470 are electrically connected to the capacitor 4030 on the ceramic substrate 450 through the capacitor pad 4720, the other end of the capacitor 4030 is electrically connected to the first capacitor 490 on the first boss 420 through wire bonding, and the first capacitor 490 is electrically connected to the ground pin of the TO can 401 through wire bonding.

[0102] The first thin film resistor 460 and the second thin film resistor 470 are connected in parallel and electrically connected to the EA area of the EML chip 440, and the first thin film resistor 460 and the second thin film resistor 470 connected in parallel are electrically connected to the capacitor 4030 through the capacitor pad 4720, so as to connect the first thin film resistor 460, the second thin film resistor 470 and the capacitor 4030 in the loop of the EML chip 440. According to the resistance value of the first thin film resistor 460 and the second thin film resistor 470 connected in parallel and the capacitor 4030, the inductance can be changed, the electrical parasitic effect is improved by adjusting the inductance, so as to improve the bandwidth and the eye diagram.

[0103] The optical module provided by the embodiment of the application is provided with a plurality of thin-film resistors and capacitors on the ceramic substrate of the optical transmitting sub-module, the plurality of thin-film resistors can be electrically connected to the EA area of the EML chip through wire bonding in a single or parallel manner, the other end of the thin-film resistor is electrically connected to the capacitor through a capacitor pad, and the capacitor is electrically connected to a grounding pin through wire bonding, so that different resistors and capacitors are connected in the loop of the EML chip, different resistors and capacitors achieve impedance matching, thereby changing inductance, improving electrical parasitic effects by adjusting inductance, and obtaining the best bandwidth and eye diagram after reasonable combination.

[0104] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the application, and not to limit them; although the application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the application.

Claims

1. An optical module, characterized in that: include: circuit boards; an optical transmission submodule, electrically connected to the circuit board via pins, for transmitting optical signals; Wherein, the optical transmission sub-module includes: TO socket; A TO tube cap, which is covered on the TO tube base; A first boss is provided on the TO tube holder, comprising a bottom platform and a side platform connected to the bottom platform, wherein the bottom platform is fixed on the surface of the TO tube holder; A ceramic substrate is disposed on the side platform, on which a thin film resistor and a curved coating are disposed, one end of the curved coating is electrically connected to one end of the thin film resistor, and the other end is electrically connected to the ground pin on the TO socket via a bonding wire; The EML chip is arranged on the side of the ceramic substrate, and one end of the EA area on the EML chip is electrically connected to the RF pin on the TO tube holder through bonding, and the other end of the EA area is electrically connected to the other end of the thin film resistor through bonding.

2. The optical module according to claim 1, wherein The curved plating layer includes a first plating section, a curved plating section, and a second plating section that are integrally connected. The first plating section and the second plating section are arranged opposite to each other, and both ends of the curved plating section are connected to one end of the first plating section and one end of the second plating section respectively. One end of the thin film resistor is provided with a soldering pad, and the other end is electrically connected to the first section of the plating layer.

3. The optical module according to claim 2, wherein: The thin film resistor comprises a first thin film resistor, one end of the first thin film resistor is provided with a first pad, and the other end of the first thin film resistor is electrically connected to the curved plating layer; The EA region of the EML chip is electrically connected to the first pad through a first bonding wire.

4. The optical module according to claim 3, wherein: The thin film resistor further includes a second thin film resistor, a second pad is provided at one end of the second thin film resistor, and the first pad is electrically connected to the second pad via a second bonding wire; The first thin-film resistor and the second thin-film resistor are both electrically connected to the curved plating layer.

5. The optical module according to claim 4, wherein: The resistance value of the first thin film resistor is 50Ω, and the resistance value of the second thin film resistor is 130Ω.

6. The optical module according to claim 1, wherein: Limiting areas are set on opposite sides of the curved coating, and a gold wire is set between the two limiting areas. One end of the gold wire is electrically connected to one limiting area, and the other end of the gold wire crosses the curved coating and is electrically connected to the other limiting area.

7. The optical module according to claim 6, wherein: At least two gold wires are arranged between the two limiting areas, and the plurality of gold wires are sequentially arranged in parallel toward a side away from the thin film resistor.

8. The optical module according to claim 1, wherein: A capacitor is also provided on the first boss. The curved plating layer is electrically connected to one end of the capacitor via a bonding wire, and the other end of the capacitor is electrically connected to a ground pin on the TO tube holder via a bonding wire.

9. The optical module according to claim 1, wherein: The optical transmission sub-module also includes a second boss, which is arranged on the TO tube socket. A radio frequency signal substrate is provided on the side of the second boss. The EA area is electrically connected to one end of the radio frequency signal substrate through bonding, and the other end of the radio frequency signal substrate is electrically connected to the radio frequency pin on the TO tube socket.

10. The optical module according to claim 9, wherein: A T-shaped gold-plated layer is also provided on the ceramic substrate, and the T-shaped gold-plated layer is provided between the EML chip and the RF signal substrate. The EA area is electrically connected to one end of the T-shaped gold-plated layer through bonding, and the other end of the T-shaped gold-plated layer is electrically connected to one end of the RF signal substrate through bonding.

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