Resistance alloys and shunt resistors

Abstract

The present invention provides a resistance alloy for a shunt resistor, the application of the resistance alloy to a shunt resistor, and a shunt resistor using the resistance alloy, which can reduce the TCR of a shunt resistor used in a current detection device capable of detecting large currents. The resistance alloy is a copper-manganese-based resistance alloy for a shunt resistor, further containing tin and nickel, and has a TCR of -36×10 at 100°C based on a temperature of 25°C. ‑6 / K or less.

Description

Technical Field

[0001] The present invention relates to a resistance alloy for a shunt resistor, application of the resistance alloy to the shunt resistor, and a shunt resistor using the resistance alloy. Background Art

[0002] Resistor alloys used in resistors for current detection and other applications include copper-manganese alloys, copper-nickel alloys, nickel-chromium alloys, and iron-chromium alloys. Generally, copper-manganese alloys (copper-manganese-nickel alloys) are commercially available with resistivities of 29 μΩ·cm or more and 50 μΩ·cm or less. Nickel-chromium-aluminum-copper alloys are commercially available with resistivities of 120 μΩ·cm or more (see Patent Document 1, etc.).

[0003] The temperature coefficient of resistance (TCR) of resistor alloys used for current detection is typically designed to target a value near 0 ppm / K at 20-100°C. Using such resistor materials, stable current detection accuracy can be achieved even under varying temperature conditions.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2007-329421 Summary of the Invention

[0007] Technical Problems to be Solved by the Invention

[0008] In recent years, there has been a demand for current detection resistors to be used for detecting large currents such as 1000 A. To cope with this, the resistance values ​​of shunt resistors have been decreasing, such as 100 μΩ, 50 μΩ, 25 μΩ, and 10 μΩ.

[0009] When using the above-mentioned resistance alloy to construct a shunt resistor (current detection resistor), copper electrodes are soldered to both ends of the resistor. Copper has a high TCR of approximately 4000 ppm / K (25-100°C). When miniaturizing or reducing the resistance of the shunt resistor, the TCR of the copper electrodes contributes to an increase in the proportion of the shunt resistor's resistance value. As a result, the TCR of the shunt resistor increases, deteriorating the accuracy of current detection.

[0010] Patent Document 1 discloses a technique for adjusting the TCR using the shape of a resistor. However, this technique has the problem of increasing the actual resistance of the resistor due to electrode processing. Furthermore, miniaturization of the resistor also presents difficulties in processing and adjusting the resistor.

[0011] Furthermore, when the shunt resistor is made low-resistance and compact, there is also a problem that the TCR of the resistor increases, which reduces the detection accuracy. In addition, it is also necessary to ensure the reliability of the current detection device.

[0012] Furthermore, depending on product specifications, the thickness and width of shunt resistors are sometimes fixed. In such cases, to reduce the resistance value of the resistor, the length of the resistor body must be shortened to achieve lower resistance. However, if the resistor body is to be welded to the electrode using electron beam welding or other methods, the width of the weld mark must be considered. Therefore, the process of shortening the resistor body has a processing size limit.

[0013] An object of the present invention is to provide a resistance alloy capable of reducing the TCR of a shunt resistor used in a current detection device capable of detecting a large current.

[0014] Technical solutions to technical problems

[0015] According to one aspect of the present invention, a resistance alloy is provided, which is a copper-manganese resistance alloy for shunt resistors, further comprising tin and nickel, and having a TCR of -36×10-1 at 100°C based on 25°C. -6 / K or less.

[0016] In addition, the present invention is a resistance alloy, which is a copper-manganese resistance alloy for shunt resistors, further containing tin and nickel, and has a TCR of -10×10 -6 / K or less.

[0017] In the above, manganese accounts for 9.5 to 12.5 mass%, nickel accounts for 1 to 3 mass%, tin accounts for 2.5 to 5 mass%, and the remainder is copper.

[0018] This makes it possible to reduce the TCR value of the shunt resistor formed of, for example, a copper electrode.

[0019] Furthermore, the present invention is application of any of the above-described resistance alloys to a resistor element of a shunt resistor used in a current detection device.

[0020] The present invention also provides a shunt resistor comprising electrodes and a resistor body, wherein the resistor body is formed of a resistance alloy, wherein the resistance alloy is a copper-manganese resistance alloy and further contains tin and nickel, and wherein the TCR is -36×10-1 at 100°C based on a temperature of 25°C. -6 / K or less.

[0021] The present invention also provides a shunt resistor comprising electrodes and a resistor body, wherein the resistor body is formed of a resistance alloy, wherein the resistance alloy is a copper-manganese resistance alloy and further contains tin and nickel, and wherein the TCR is -10×10- ... -6 / K or less.

[0022] This specification includes the disclosure of Japanese Patent Application No. 2020-134314 on which the priority of the present invention is based.

[0023] Effects of the Invention

[0024] According to the present invention, it is possible to reduce the TCR of a shunt resistor used in a current detection device capable of detecting a large current.

[0025] Furthermore, according to the present invention, the reliability of current detection by the shunt resistor can be ensured. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a phase diagram of a quaternary alloy containing copper and a manganese-tin-nickel alloy for a resistor according to the present embodiment.

[0027] Figure 2 It is a diagram showing the shape of a sample for evaluating an alloy for a resistor according to an embodiment of the present invention.

[0028] Figure 3 This is a graph showing the results of a long-term stability (reliability) test conducted on Sample No. 1 and Comparative Example 1 in Tables 1 and 2.

[0029] Figure 4 (a) is a perspective view showing a configuration example of a shunt resistor using the alloy for a resistor according to the first embodiment of the present invention. Figure 4 (b) is a top view and a side view of the shunt resistor. Figure 4 (b) shows the dimensions (mm) of the components.

[0030] Figure 5A It is a diagram showing an example of a manufacturing process of a shunt resistor according to the third embodiment of the present invention.

[0031] Figure 5B This is a diagram showing an example of a manufacturing process of a shunt resistor according to a third embodiment of the present invention. Figure 5A Picture.

[0032] Figure 5C This is a diagram showing an example of a manufacturing process of a shunt resistor according to a third embodiment of the present invention. Figure 5B Picture.

[0033] Figure 5DThis is a diagram showing an example of a manufacturing process of a shunt resistor according to a third embodiment of the present invention. Figure 5C Picture.

[0034] Figure 5E This is a diagram showing an example of a manufacturing process of a shunt resistor according to a third embodiment of the present invention. Figure 5D Picture.

[0035] Figure 5F This is a diagram showing an example of a manufacturing process of a shunt resistor according to a third embodiment of the present invention. Figure 5E Picture. DETAILED DESCRIPTION

[0036] Hereinafter, a resistance alloy for a shunt resistor, a shunt resistor using the resistance alloy, and the like according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0037] First, the inventors' considerations related to the present invention will be described.

[0038] 1) The inventors' perspective is that, in order to compensate for the high positive TCR contribution of copper used as an electrode, it is important to use a resistor alloy exhibiting a negative TCR for the resistor element. However, there are few reports on resistor alloys with a large negative TCR.

[0039] 2) Although there are copper-nickel alloys with low TCR and excellent long-term stability, these alloys have a high thermoelectric potential relative to copper of 40 μV / K. Therefore, the Peltier effect reduces the detection accuracy of shunt resistors used in current detection devices for large currents.

[0040] 3) Nickel-chromium alloys are alloys with negative TCR. However, the volume resistivity of nickel-chromium alloys is more than twice that of copper-nickel and copper-manganese alloys. Therefore, it is difficult to achieve low resistance in shunt resistors.

[0041] This embodiment is based on the idea that the TCR of the resistor can be reduced by making the resistor have a negative TCR. In other words, it is important to find a resistor with a negative TCR.

[0042] (First embodiment)

[0043] The following embodiments of the present invention will be described.

[0044] The alloy of this embodiment is a resistance alloy having a negative TCR and is a quaternary alloy composed of copper-manganese-nickel-tin. This resistance alloy can be used as a resistance material for a shunt resistor.

[0045] Figure 1This is a phase diagram of a quaternary alloy containing copper and a manganese-tin-nickel alloy for a resistor according to the present embodiment.

[0046] Here, the mass fraction of copper is shown on the upper left axis, the mass fraction of nickel + tin is shown on the upper right axis, and the mass fraction of manganese is shown on the bottom axis.

[0047] exist Figure 1 The blackened region R, which characterizes the resistance alloy of the present invention, is shown. The mass fraction of manganese in region R is 9.5% to 12.5%, and the mass fraction of nickel + tin in region R is 3.5% to 8%. More specifically, the mass fraction of nickel is 1% to 3%, and the mass fraction of tin is 2.5% to 5%. The remainder is copper.

[0048] A representative value of manganese is 10.5 mass%, a representative value of nickel is 2.0 mass%, a representative value of tin is 3 mass%, and the remainder is copper.

[0049] Figure 2 It is a diagram showing the shape of a sample for evaluating an alloy for a resistor according to an embodiment of the present invention.

[0050] like Figure 2 As shown, a resistor alloy evaluation sample X includes electrodes 1 and 3 at both ends (portions through which current flows), a resistor 5 extending between the electrodes 1 and 3, and voltage detection portions 7 and 9 located more centrally than the ends of the resistor 5. The distance between the electrodes 1 and 3 is 50 mm, and the distance between the voltage detection portions 7 and 9 is 20 mm.

[0051] Next, an example of a process for producing an evaluation sample will be briefly described.

[0052] 1) Weigh the raw materials.

[0053] 2) Dissolve the material in 1).

[0054] 3) Use a cold rolling mill to make the material into strips of specified thickness.

[0055] 4) Heat treatment is performed in a vacuum gas replacement furnace at 500 to 700°C for 1 to 2 hours under an N2 atmosphere.

[0056] 5) Made from strip by stamping Figure 2 Resistor sample in the shape of.

[0057] 6) Heat treatment (low-temperature heat treatment) is performed in a vacuum gas replacement furnace at 200 to 400°C for 1 to 4 hours under an N2 atmosphere.

[0058] The mass fractions of the alloy components in the aforementioned region R are adjusted to each other so that the resistance alloy has the following characteristics (appropriate conditions).

[0059] (Appropriate conditions)

[0060] 1) The resistivity is 41 μΩ·cm or more and 54 μΩ·cm or less.

[0061] 2) TCR is -36×10 at 100°C based on 25°C -6 / K or less.

[0062] In addition, TCR is -25×10 at 60°C based on 25°C. -6 / K or less.

[0063] In addition, TCR is -10×10 -6 / K or less.

[0064] 3) This is a resistance alloy with a thermoelectromotive force of -1 μV / K to +1 μV / K relative to copper. This characteristic is approximately 1 / 40 of that of a Cu-Ni alloy and is comparable to that of manganin.

[0065] (Based on the effect of resistance alloys that meet appropriate conditions)

[0066] When the resistance alloy of this embodiment is used, the following effects can be obtained.

[0067] 1) The TCR of a shunt resistor having electrodes using a material containing copper can be reduced.

[0068] 2) The resistance change rate of the shunt resistor in the reliability test (heating temperature 175°C, heating time 1000 hours) is smaller than that of manganin and has excellent long-term stability.

[0069] 3) An alloy having a Vickers hardness (200 HV or less) smaller than that of nickel-chromium alloys and iron-chromium alloys and being easy to process. When the Vickers hardness is greater than 200 HV, cracks may sometimes occur, for example, during rolling. In order to prevent the occurrence of cracks, countermeasures such as heat treatment are required, the process becomes complicated, but in this embodiment, heat treatment is not required. Considering processability, the Vickers hardness is more preferably 150 HV or less. In addition, from the perspective of stamping properties, mechanical strength, etc., the Vickers hardness is also preferably 150 HV or less.

[0070] (Detailed description of resistance alloy specimens)

[0071] Various samples shown below were produced.

[0072] Tables 1 and 2 show the properties of these samples.

[0073] [Table 1]

[0074]

[0075] ※The samples marked are excluded from the embodiment of the present invention (not included).

[0076] ※Comparative Examples 1 and 2 are different commercially available materials

[0077] Table 1 shows the composition / ingredients (mass %), heat treatment temperature, Vickers hardness, resistivity, thermoelectromotive force against copper, and workability evaluation results (○ indicates appropriate) for the alloy materials of Samples 1 to 14. In addition, the composition may contain unavoidable impurities. Samples marked with ※ are samples that deviate from the composition of this embodiment (non-target samples). Furthermore, Comparative Examples 1 and 2 show examples using commercially available material systems with compositions different from those of this embodiment.

[0078] The heat treatment conditions for the various samples shown in Table 1 were 600°C for 1 hour. The alloy of this embodiment can be recrystallized by heat treating at a temperature above 600°C for approximately 1 hour. Alternatively, recrystallization can be achieved by heat treating at 700°C for several minutes. Recrystallization of the various samples can achieve excellent hardness and, as described below with reference to Table 2, achieve the target values ​​of the present invention for TCR characteristics. Furthermore, a resistance alloy with excellent long-term stability can be obtained.

[0079] In addition, when the heat treatment temperature is set to less than about 600°C, for example, when the heat treatment temperature is about 400°C, the Vickers hardness exceeds 150 HV. However, the Vickers hardness is preferably 150 HV or less. All alloy materials (samples) shown in this embodiment also meet the appropriate condition of a Vickers hardness of 150 HV or less.

[0080] All samples achieved values ​​comparable to those of Comparative Examples 1 and 2, commercially available materials, regarding the resistivity of the resistor material. The thermoelectromotive force relative to copper satisfies the appropriate conditions within the range of -1 μV / K to +1 μV / K. Samples 9 and 10 fall outside this range (excluding the target sample). The remaining samples met the appropriate conditions.

[0081] The evaluation of workability is particularly effective when rolling is performed. O marks indicate good workability, △ marks indicate samples with minor cracking but practical workability, and × marks indicate difficult rolling. Sample No. 7 failed to achieve practical workability. The other samples, while varying in quality, achieved practical workability.

[0082] [Table 2]

[0083]

[0084] ※The samples marked are excluded from the embodiment of the present invention (not included).

[0085] Table 2 shows the TCR values ​​of the various samples (resistance alloy materials) shown in Table 1. The TCR values ​​were calculated under the various measurement temperature conditions shown in Table 2, with 25° C. as the reference temperature. The sample numbers in Table 2 correspond to the sample numbers in Table 1.

[0086] From the data shown in Table 2, the following can be understood.

[0087] 1) Sn content dependence

[0088] Sample Nos. 5 and 6 do not contain Sn. In the case of alloy materials that do not contain Sn, TCR tends to be on the positive side.

[0089] In contrast, by including Sn within a specified range, as in Samples 1, 3, and 4, the TCR can be shifted toward the negative side. Thus, adding Sn is effective in making the TCR negative. On the other hand, Sample 2 contains less Sn (1.0 mass%) than the other samples containing Sn. Sample 7 contains more Sn (7.0 mass%) than the other samples containing Sn. In the case of Sample 7, as shown in Table 1, workability is reduced. Furthermore, TCR could not be measured.

[0090] 2) Ni content dependence

[0091] Sample No. 10, while containing Sn within the specified range, also contains more Ni, improving workability such as rolling, but resulting in a positive TCR. Sample No. 9, which contains no Ni, exhibits a slightly higher thermoelectromotive force relative to copper and slightly lowers workability. Sample No. 4 also exhibits slightly inferior workability.

[0092] Sample No. 9 has a larger thermoelectromotive force against copper than the other samples containing Ni. This shows that Ni has an effect of reducing the thermoelectromotive force against copper.

[0093] Based on the above results, Samples 2 (less Sn than the specified value), 5, 6 (no Sn), and 10 (more Ni than the specified value) exhibited positive TCR and were therefore excluded from the group of samples capable of achieving the objectives of the present invention. Furthermore, Sample 7 (more Sn than the specified value) exhibited poor workability and was therefore excluded from the group of samples capable of achieving the objectives of the present invention. Sample 9 exhibited a greater than specified thermoelectromotive force relative to copper and was therefore excluded.

[0094] Judging comprehensively from the above results, more suitable alloy resistance materials include sample No. 1, No. 3, No. 11, No. 12, No. 13, and No. 14.

[0095] (Summary of alloy characteristics)

[0096] If we summarize the above results, then Figure 1 As shown in region R, the alloy serving as the resistance material of the shunt resistor of this embodiment has a manganese mass fraction of 9.5% to 12.5%, and the nickel + tin mass fractions in region R are 3.5% to 8%. More specifically, nickel is 1% to 3% by mass, tin is 2.5% to 5% by mass, and the remainder is copper.

[0097] (Results of reliability test)

[0098] Figure 3 This is a graph showing the results of a long-term reliability test on Sample No. 1 and Comparative Example 1. The long-term reliability test measured the resistance change ΔR (%) under the conditions of 175°C and 1000 hours. Figure 3 As shown, the resistance value change after 1000 hours for Sample No. 1 was approximately -0.3%, while that for Comparative Example 1 (commercially available material) was approximately -0.7%. This demonstrates that the resistance material using the alloy material of this embodiment (such as Sample No. 1) has excellent long-term reliability.

[0099] As described above, the resistor alloy of this embodiment can provide a resistor alloy that can achieve a resistivity of approximately 41 to 55 μΩ·cm and has improved workability compared to nickel-chromium alloys and iron-chromium alloys.

[0100] When designing a shunt resistor using a relatively low resistivity resistor material, if a shunt resistor with a high resistance is desired, the resistor element may need to be thinner or longer, which may pose design limitations. However, according to this embodiment, by using a relatively high resistivity resistor element, the design freedom of the shunt resistor can be ensured.

[0101] Furthermore, by using a resistance alloy with a relatively high resistivity, the contribution of Cu used as an electrode to the TCR of the entire resistor can be relatively reduced. Therefore, a shunt resistor can be realized that effectively utilizes the characteristics of the resistance alloy.

[0102] Furthermore, it was found that the alloy for the resistor of this embodiment has excellent long-term reliability.

[0103] (Second embodiment)

[0104] Next, a second embodiment of the present invention will be described. Figure 4 (a) is a perspective view showing a configuration example of a shunt resistor using the alloy for a resistor according to the first embodiment of the present invention. Figure 4 (b) is a top view and a side view of the shunt resistor. Figure 4 Dimensions (mm) are shown in (b).

[0105] Figure 4 The shunt resistor A shown in (a) and (b) has a structure in which a single-piece resistor body 11 is produced by stamping or the like, and Cu electrodes 15a and 15b are butt-welded to both ends of the resistor body 11.

[0106] The resistor 11 and the electrodes 15 a and 15 b can be joined by EB (electron beam) welding, LB (laser beam) welding, or the like. Figure 4 The shunt resistor A shown is a relatively large shunt resistor and is sometimes manufactured individually. The resistor element material described in the first embodiment can be the resistor element material comprising 9.5-12.5% ​​manganese by mass, 1-3% nickel by mass, 2.5-5% tin by mass, and the remainder copper. Alternatively, the alloys described in the first embodiment can be used depending on the intended purpose.

[0107] The shunt resistor of the present embodiment can ensure a degree of freedom in design of the shunt resistor by using a resistor having a relatively high resistivity.

[0108] Furthermore, by using a resistance alloy with a relatively high resistivity, the contribution of Cu used as an electrode to the TCR of the entire resistor can be relatively reduced. Therefore, a shunt resistor can be realized that effectively utilizes the characteristics of the resistance alloy.

[0109] Here, in this embodiment, the resistance temperature coefficient of the resistor material is adjusted to be negative, so that the resistance temperature coefficient of the resistor itself, to which the copper electrode is bonded, can be reduced.

[0110] In addition, Figure 4 The TCR of the shunt resistor A having the structure and dimensions shown in (b) was measured. The TCR of the shunt resistor using Comparative Example 1 as the resistor material was 76 ppm / K. In contrast, the TCR of the shunt resistor using Sample No. 1 was 50 ppm / K. This shows that the use of the resistance alloy of this embodiment can improve the TCR toward zero.

[0111] (Third embodiment)

[0112] Next, a third embodiment of the present invention will be described. This example involves preparing a long strip of bonding material for bonding a resistor element to an electrode and then punching and cutting it. This allows for mass production of relatively small shunt resistors.

[0113] An example of such a manufacturing process is shown below. Figures 5A to 5F This is a diagram showing an example of a manufacturing process of the shunt resistor according to the present embodiment.

[0114] like Figure 5A As shown, for example, a long flat plate-shaped resistor material 21, a long flat plate-shaped first electrode material 25a, and a second electrode material 25b are prepared. The resistor material 21 uses the alloy material described in the first and second embodiments.

[0115] like Figure 5B As shown, a first electrode material 25 a and a second electrode material 25 b are respectively disposed on both sides of the resistor material 21 .

[0116] Also like Figure 5C As shown, for example, electron beams, laser beams, etc. are used for welding to form a flat plate (joined at L11 and L12). At this time, the irradiation area of ​​the electron beam, etc. is set to Figure 5C (a) or Figure 5C (b). Figure 5C (a) is an example in which an electron beam or the like is irradiated onto the flat surface side composed of the electrode materials 25 a and 25 b and the resistor 21 . Figure 5C (b) is an example of irradiating the inside of the recess formed by the electrode materials 25a, 25b and the resistor 21 with an electron beam or the like. The surfaces of the electrode materials 25a, 25b that protrude from the resistor 21 are not irradiated with an electron beam or the like to reduce the influence.

[0117] The resistance value can also be adjusted by using the difference in thickness between the resistor material 21 and the electrode materials 25a, 25b. Figure 5F A step (Δh2) described later can be formed in the molten metal layer. Various adjustments can be made to the resistance value and shape according to the bonding position.

[0118] Then, if Figure 5D As shown in (a), from Figure 5B The flat plate is removed into a comb-shaped shape by punching or the like in a manner such that the region including the resistor 21 is shown as numeral 17. Next, a portion of the first electrode material 25a and the second electrode material 25b is bent by punching or the like to form a Figure 5D The cross-sectional shape of the structure is shown in the cross-sectional view of (b). In addition, reference numerals 21a and 21b are welded portions, which are connected by electron beam irradiation or the like.

[0119] Then, if Figure 5E As shown, the other uncut end side (35b) of the electrode is cut along L31 from the remaining region (base) 25b'. This allows the formation of the butted-structure resistor for the current detection device of the first embodiment. Using the manufacturing method of this embodiment has the advantage of enabling mass production of resistors including electrodes 35a, 35b and resistor element 31.

[0120] In addition, if Figure 5F As shown in FIG. 4 , welding marks 43a and 43b are formed on the resistor. Generally, the surface of the welding marks produced by electron beams or the like becomes rough. In order to perform precise current detection, it is preferable to fix the bonding wire as close to the resistor as possible, but in this case, the welding marks may become an obstacle. According to this embodiment, by Figure 5C The method described in detail in the description of FIG can avoid the formation of welding marks in the areas 35a-2 and 35b-2 that become the bonding surfaces. Therefore, there is an advantage that the bonding wire can be fixed at a position close to the resistor.

[0121] The shunt resistor of the present embodiment can ensure a degree of freedom in design of the shunt resistor by using a resistor having a relatively high resistivity.

[0122] Furthermore, by using a resistance alloy with a relatively high resistivity, the contribution of Cu used as an electrode to the TCR of the entire resistor can be relatively reduced. Therefore, a shunt resistor can be realized that effectively utilizes the characteristics of the resistance alloy.

[0123] Furthermore, the shunt resistor material of the present embodiment has excellent workability in rolling during the manufacture of the resistor material, punching during the manufacture of the resistor, and the like.

[0124] While maintaining the above characteristics, the TCR can be made negative, and the TCR of the resistor having the copper electrode can be reduced.

[0125] (Summarize)

[0126] The present invention is summarized below.

[0127] 1) A resistance alloy containing 9.5-12.5 mass% (typical value: 10.5 mass%) manganese, 1-3 mass% (typical value: 2.5 mass%) nickel, 2.5-5 mass% (typical value: 3%) tin, and the remainder copper can be used.

[0128] 2) It is preferred that the TCR is -25×10 -6Therefore, by making the TCR negative in the basic specification of the resistor material, good characteristics can be obtained for the resistor. In addition, in this case, the TCR of the resistor body is preferably -52×10 -6 / K or above.

[0129] 3) It is preferred that the TCR is -10×10 -6 As a result, the TCR can be negative in the entire temperature range of the main use area. Therefore, the TCR characteristics can be improved in the entire temperature range of the shunt resistor.

[0130] In this case, the TCR is preferably -75×10 -6 / K or above.

[0131] 4) TCR is -36×10 at 100°C based on 25°C -6 / K or less. In this case, TCR is preferably -65×1 -6 / K or above.

[0132] In the above-mentioned embodiment, the configurations shown in the drawings are not limited thereto, and can be appropriately modified within the scope of the effects of the present invention. Furthermore, the present invention can be implemented with appropriate modifications without departing from the scope of its purpose.

[0133] Furthermore, the constituent elements of the present invention can be arbitrarily selected and eliminated, and inventions including such selected and eliminated constituent elements are also encompassed by the present invention.

[0134] Industrial Applicability

[0135] The present invention can be used as an alloy for resistors.

[0136] Description of reference numerals:

[0137] Evaluation samples of alloys for X resistors

[0138] R applicable area

[0139] Electrode parts at both ends of 1 and 3 (the part where current flows)

[0140] 5 Resistor

[0141] 7, 9 Voltage detection unit

[0142] A. Shunt resistor

[0143] 11 Monolithic resistor

[0144] Electrodes 15a and 15b

[0145] 21Resistive materials in the form of long flat plates, etc.

[0146] 25a long flat plate-shaped first electrode material

[0147] 25b long flat plate-shaped second electrode material

[0148] The other end of the electrode 35b that is not cut

[0149] 43a, 43b welding marks

[0150] All publications, patents, and patent applications cited in this specification are incorporated herein by reference.

[0151] into this manual.

Claims

1. A resistance alloy, characterized in that: The resistance alloy is a copper-manganese resistance alloy used for shunt resistors. Also contains tin and nickel, Manganese is 9.5-12.5% ​​by mass, nickel is 1-3% by mass, tin is 2.5-5% by mass, and the remainder is copper. TCR is -36×10 at 100°C based on 25°C. -6 / K or less, The thermoelectromotive force on copper is -1μV / K~+1μV / K.

2. A resistance alloy, characterized in that: The resistance alloy is a copper-manganese resistance alloy used for shunt resistors. Also contains tin and nickel, Manganese is 9.5-12.5% ​​by mass, nickel is 1-3% by mass, tin is 2.5-5% by mass, and the remainder is copper. TCR is -10×10-10 in the range of 0℃~175℃ with 25℃ as the reference. -6 / K or less, The thermoelectromotive force on copper is -1μV / K~+1μV / K.

3. A shunt resistor, characterized in that: The shunt resistor includes electrodes and a resistor body, wherein the resistor body is a copper-manganese resistance alloy. Also contains tin and nickel, Manganese is 9.5-12.5% ​​by mass, nickel is 1-3% by mass, tin is 2.5-5% by mass, and the remainder is copper. TCR is -36×10 at 100°C based on 25°C. -6 / K or less, The thermoelectromotive force on copper is -1μV / K~+1μV / K.

4. A shunt resistor, characterized in that: The shunt resistor includes an electrode and a resistor body. The resistor is a copper-manganese resistance alloy. Also contains tin and nickel, Manganese is 9.5-12.5% ​​by mass, nickel is 1-3% by mass, tin is 2.5-5% by mass, and the remainder is copper. TCR is -10×10-10 in the range of 0℃~175℃ with 25℃ as the reference. -6 / K or less, The thermoelectromotive force on copper is -1μV / K~+1μV / K.

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