Fluid processing device, fluid processing method, and semiconductor processing system

Abstract

The present invention provides a fluid processing device, method, and semiconductor processing system. The fluid processing device includes: at least two rotary valves, each of which includes a common through-hole and multiple optional through-holes, one of the multiple optional through-holes of each rotary valve being connected to a gas port via a pipeline, and / or one of the optional through-holes being connected to a sample introduction port via a pipeline, and / or one of the optional through-holes being connected to a cleaning solution port via a pipeline, wherein one of the optional through-holes of one rotary valve is connected to a sample outlet via a pipeline; and a fluid container having a cavity formed therein, a plurality of through-holes being provided at its top, and one or more through-holes being provided at its bottom, wherein one through-hole at the top is connected to the common through-hole of one of the rotary valves via a pipeline, and one through-hole at the bottom is connected to the common through-hole of another of the rotary valves via a pipeline. The fluid processing device can automatically achieve accurate and sufficient mixing of different liquid samples and is easy to clean.

Description

Technical field

[0001] The present invention relates to the field of fluid processing, and in particular to a fluid processing device, a fluid processing method and a semiconductor processing system. [Background Technology]

[0002] In integrated circuit chip manufacturing, nearly every process has the potential to contaminate the wafer surface, impacting device performance and lifespan, and even rendering most devices on the wafer useless, resulting in low yield. Therefore, in the manufacturing of complex chips, especially those with high-end, small reticle lines, monitoring and controlling wafer surface contamination is crucial for ensuring production yield and chip quality.

[0003] In the semiconductor manufacturing industry, a variety of wafer surface contamination detection technologies exist, which can be categorized as physical and chemical methods. Physical methods primarily utilize photoelectric principles to detect wafer surface contamination, such as total reflection X-ray fluorescence (TXRF) analysis, surface photovoltage (SPV), scanning electron microscopy (SEM), and secondary ion mass spectrometry (SIMS). Chemical methods primarily use a trace amount of a chemical mixture solution to scan across the wafer surface, reacting chemically and physically with the contaminants on the wafer surface, dissolving the contaminants and collecting them in the solution. Appropriate measuring instruments are used to qualitatively and quantitatively measure the concentration of the contaminant elements, ions, or molecules collected in the solution. This concentration can be converted into the number of atoms, ions, or molecules of a particular contaminant per unit area of the wafer.

[0004] In the manufacturing process of high-end chips, even trace amounts of contamination, especially metal contamination, can reduce production yield and chip quality. Contamination monitoring is a critical step in ensuring chip production yield and performance quality. The entire contamination monitoring process, including sampling and measurement, determines the detection limit and accuracy of the detection method. Simplifying sampling and measurement steps as much as possible, reducing potential sources of contamination, and implementing fully automated online sampling, measurement, and data analysis can ensure and improve detection capabilities and quality. Therefore, a fluid handling device is required. This device can collect the extraction solution from contamination extraction equipment, such as dynamic thin-layer wafer surface contamination sampling equipment, and then transfer the extraction solution to measurement instruments, such as inductively coupled plasma mass spectrometers. This device can also accurately collect trace amounts of multiple chemical solutions, automatically mix them, and then deliver them to sampling equipment or measurement instruments. It can also automatically perform ultra-clean cleaning to ensure ultra-cleanliness throughout the entire process. [Summary of the invention]

[0005] One of the objectives of the present invention is to provide a fluid processing device and a fluid processing method, which can automatically achieve accurate and sufficient mixing of different liquid samples and are easy to clean.

[0006] A second object of the present invention is to provide a semiconductor processing system that can automatically and accurately collect and fully mix different liquid samples, and has an automatic cleaning function to ensure an ultra-clean state of the entire fluid route.

[0007] To achieve the above-mentioned purpose, according to a first aspect of the present invention, there is provided a fluid processing device, comprising: a pipeline; at least two rotary valves, each rotary valve comprising a common through-hole and a plurality of optional through-holes, wherein the common through-hole can be connected to an optional through-hole among the plurality of optional through-holes through an internal passage by rotating the rotary valve, wherein one optional through-hole among the plurality of optional through-holes of each rotary valve is connected to a gas port through a pipeline to receive gas, and / or one optional through-hole is connected to a sample introduction port through a pipeline to receive a liquid sample, and / or one is connected to a cleaning solution port through a pipeline to receive a cleaning solution, wherein one optional through-hole of one rotary valve is connected to a sample outlet through a pipeline to discharge the liquid sample; a fluid container, wherein a cavity is formed inside the fluid container, a plurality of through-holes connected to the cavity are provided at the top thereof, and one or more through-holes connected to the cavity are provided at the bottom thereof, wherein a through-hole located at the top is connected to the common through-hole of one of the rotary valves through a pipeline, and a through-hole located at the bottom is connected to the common through-hole of another of the rotary valves through a pipeline.

[0008] According to another aspect of the present invention, the present invention provides a fluid processing method for a fluid processing device, comprising: introducing a liquid sample into the cavity of the fluid container, the process comprising: rotating a rotary valve to an optional through-hole connected to the sample introduction port; the sample introduction port introduces the liquid sample into the cavity of the fluid container through a pipeline and the rotary valve, and if there are bubbles in the liquid sample, these bubbles will be discharged through the through-hole at the top of the fluid container connected to the first waste outlet; after the liquid sample is received, the rotary valve is rotated to an optional through-hole connected to the gas port, and the liquid sample in the pipeline between the rotary valve and the fluid container is completely sent into the cavity of the fluid container through the gas.

[0009] According to another aspect of the present invention, there is provided a semiconductor processing system, comprising: a semiconductor processing apparatus comprising: a first chamber portion; a second chamber portion movable between an open position and a closed position relative to the first chamber portion, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a microchamber is formed between the first chamber portion and the second chamber portion, and a semiconductor wafer can be accommodated in the microchamber; when the second chamber portion is in the open position relative to the first chamber portion, the semiconductor wafer can be taken out or put in; wherein the first chamber portion has a first groove formed on an inner wall surface of the first chamber portion facing the microchamber, and the second chamber portion has a first groove formed on an inner wall surface of the second chamber portion facing the microchamber. The second groove is formed on the inner wall surface of the microchamber. When the second chamber portion is in the closed position relative to the first chamber portion and a semiconductor wafer is accommodated in the microchamber, the first groove and the second groove are connected and jointly form an edge microprocessing space. The outer edge of the semiconductor wafer accommodated in the microchamber extends into the edge microprocessing space. The edge microprocessing space is connected to the outside through the edge processing through-hole, and the fluid enters or flows out of the edge microprocessing space through the edge processing through-hole; the fluid required for the process is accurately prepared according to the process formula through the fluid processing device described above, and is sent into the microprocessing space through the edge processing through-hole; the edge processing through-hole can also be connected through the above-mentioned fluid processing device to collect the fluid coming out of the microprocessing space.

[0010] Compared to existing technologies, the present invention utilizes a fluid container and at least two rotary valves to automatically and precisely collect and thoroughly mix trace amounts of different liquid samples. The collected and mixed liquids are then transferred to a measuring instrument or automatic sample collector, and the process is easy to clean. All fluid-contact surfaces are constructed of pure, corrosion-resistant polytetrafluoroethylene (PTFE), ensuring an ultra-clean fluid handling device.

Brief Description of the Drawings

[0011] The present invention will be more readily understood with reference to the accompanying drawings and the following detailed description, wherein like reference numerals correspond to like structural components, and wherein:

[0012] Figure 1a It is a structural schematic diagram of a semiconductor wafer;

[0013] Figure 1b for Figure 1a EE cross-sectional view;

[0014] Figure 1c A cross-sectional view of an outer edge portion of a semiconductor wafer before outer edge processing;

[0015] Figure 1d is a cross-sectional view of an outer edge portion of a semiconductor wafer after outer edge processing;

[0016] Figure 2ais a schematic cross-sectional view of a semiconductor processing device according to a first embodiment of the present invention;

[0017] Figure 2b for Figure 2a An enlarged schematic diagram of circle A in FIG;

[0018] Figure 3a for Figure 2a A bottom view of a first chamber portion of a semiconductor processing apparatus;

[0019] Figure 3b for Figure 2a A top view of a second chamber portion of a semiconductor processing apparatus;

[0020] Figure 4a is a schematic cross-sectional view of a semiconductor processing device according to a second embodiment of the present invention;

[0021] Figure 4b for Figure 4a An enlarged schematic diagram of circle B in FIG;

[0022] Figure 5a for Figure 4a A bottom view of a first chamber portion of a semiconductor processing apparatus;

[0023] Figure 5b for Figure 4a A top view of a second chamber portion of a semiconductor processing apparatus;

[0024] Figure 6 A schematic diagram of the principle of a fluid processing device in one embodiment of the present invention;

[0025] Figure 7a and Figure 7b A schematic structural diagram of a fluid container in one embodiment of the present invention is provided;

[0026] Figure 8a and Figure 8b A schematic structural diagram of another embodiment of the fluid container of the present invention is provided; and

[0027] Figure 8c Shows the formation Figure 8a and Figure 8b Schematic diagram of a cup blank for a fluid container is shown. [Specific implementation method]

[0028] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0029] The term "one embodiment" or "embodiment" as used herein means that the specific features, structures, or characteristics associated with the embodiment may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in various places in this specification does not necessarily refer to the same embodiment, nor does it necessarily refer to separate or selected embodiments that are mutually exclusive with other embodiments. The terms "multiple" and "several" as used herein mean two or more. The term "and / or" as used herein means "and" or "or."

[0030] First embodiment:

[0031] Precision edge etching of semiconductor wafers is a challenging process. It requires achieving micron-level precision etching of the wafer edge without damaging or contaminating the remaining thin film. In epitaxial wafer manufacturing and advanced integrated circuit manufacturing, wafer edge etching is a critical step in ensuring the quality of thin film formation and improving chip yield. Furthermore, precise edge contamination extraction from semiconductor wafers is a challenging process. This involves precisely scanning the wafer edge with a small amount of a chemical mixture, dissolving and extracting any contaminants into an extraction solution. A detection instrument then measures the contaminant concentration in the extraction solution, and a formula is used to calculate the number of atoms, ions, or molecules of the contaminant per unit area of the wafer edge.

[0032] Please refer to Figures 1a to 1d ,in: Figure 1a 4 shows a schematic structural diagram of a semiconductor wafer 400. Figure 1b for Figure 1a EE cross-sectional view; Figure 1c A partial cross-sectional view of an outer edge of a semiconductor wafer before outer edge processing; Figure 1d This is a cross-sectional view of the outer edge of a semiconductor wafer after outer edge processing. Figures 1a to 1d As shown, semiconductor wafer 400 includes a base layer 401 and a thin film layer 402 formed on a first side surface and a second side surface of base layer 401. After a targeted etching process is performed on the outer edge of semiconductor wafer 400, thin film layer 402 on the outer edge of semiconductor wafer 400 is removed, and the first side surface and the second side surface of base layer 401 are exposed.

[0033] Please refer to Figures 2a to 3b , which shows a schematic structural diagram of a semiconductor processing device 100 provided in a first embodiment of the present invention, wherein: Figure 2a is a schematic cross-sectional view of a semiconductor processing device according to a first embodiment of the present invention; Figure 2b for Figure 2a An enlarged schematic diagram of circle A in FIG; Figure 3a for Figure 2a A bottom view of a first chamber portion of a semiconductor processing apparatus; Figure 3b for Figure 2a A top view of a second chamber portion of a semiconductor processing apparatus in FIG.

[0034] Please refer to Figures 2a to 3b The semiconductor processing apparatus 100 includes a first chamber portion 110 and a second chamber portion 120. The first chamber portion 110 includes a first chamber plate 119 and a flange 118 extending from a periphery of the first chamber plate 119. The second chamber portion 120 includes a second chamber plate 129 and a flange 128 extending from a periphery of the second chamber plate 129.

[0035] The first chamber section 110 is movable between an open position and a closed position relative to the second chamber section 120. When the first chamber section 110 is in the closed position relative to the second chamber section 120, the flange 118 cooperates with the flange 128 to form a microchamber 140 between the first chamber plate 118 and the second chamber plate 128. A semiconductor wafer 400 to be processed can be accommodated within the microchamber 140, awaiting subsequent processing. When the first chamber section 110 is in the open position relative to the second chamber section 120, the flange 118 separates from the flange 128, allowing the semiconductor wafer 400 to be removed from or placed into the microchamber 140.

[0036] A first annular groove 116 is formed on the side of the first chamber portion 110 facing the microchamber 140, and a second groove 126 is formed on the side of the second chamber portion 120 facing the microchamber 140. When the second chamber portion 120 is in the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 is accommodated in the microchamber, the first groove 116 and the second groove 126 jointly form an edge microprocessing space 130, and the outer edge of the semiconductor wafer 400 accommodated in the microchamber extends into the edge microprocessing space 130.

[0037] like Figures 2a to 3b As shown, in this embodiment, the first groove 116 and the second groove 126 are annular grooves. When the second chamber portion 120 is in the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 is accommodated in the microchamber, the wall surface 117 of the first chamber portion 110 located inside the first groove 116 abuts against the first side surface of the semiconductor wafer 400 to be processed, and the wall surface 127 of the second chamber portion 120 located inside the second groove 126 abuts against the second side surface of the semiconductor wafer 400 to be processed. The first groove 116 and the second groove 126 together enclose the closed, annular outer edge microprocessing space 130, and the outer edge of the semiconductor wafer 400 to be processed can extend outward into the edge microprocessing space 130.

[0038] Therefore, in this embodiment, the edge micro-processing space 130 can achieve targeted processing of the entire outer edge portion of the semiconductor wafer 400 to be processed.

[0039] Of course, the first groove 116 and the second groove 126 can also be configured as arc-shaped grooves with an arc angle less than 360 degrees. In this case, a closed, arc-shaped outer edge micro-processing space 130 with an arc angle less than 360 degrees is formed between the first groove 116 and the second groove 126. Accordingly, a portion of the outer edge of the semiconductor wafer 400 to be processed extends outward into the edge micro-processing space 130. Therefore, in this case, the edge micro-processing space 130 only performs targeted processing on a portion of the outer edge of the semiconductor wafer 400 to be processed.

[0040] The first chamber portion 110 has at least two edge processing through-holes 112 extending from the outside through the first chamber portion 110 to communicate with the edge micro-processing space 130. At least one edge processing through-hole serves as a fluid inlet, and at least one edge processing through-hole serves as a fluid outlet. In this embodiment, four edge processing through-holes are provided. Of course, the second chamber portion 120 may also be provided with edge processing through-holes communicating with the edge micro-processing space 130.

[0041] During application, a processing fluid can enter the edge micro-processing space 130 through one edge processing through-hole 112. The fluid entering the edge micro-processing space 130 can flow within the edge micro-processing space 130. At this time, the processing fluid can contact and process the outer edge of the semiconductor wafer 400 to be processed. The fluid that has processed the semiconductor wafer 400 to be processed can flow out through another edge processing through-hole 112, or through an edge processing through-hole provided on the second chamber portion 120 and connected to the edge micro-processing space 130. During the processing process, the processing fluid can be continuously or periodically introduced into the edge micro-processing space 130 through one edge processing through-hole 112. The fluid in the edge micro-processing space 130 can flow during the processing process, thereby speeding up the processing speed.

[0042] Of course, the treatment may be an etching treatment of the outer edge of the semiconductor wafer 400 to be processed to remove the thin film layer on the outer edge of the semiconductor wafer 400 to be processed, or it may be a targeted cleaning of the outer edge of the semiconductor wafer 400 to be processed, etc. In addition, the treatment may also be a treatment fluid (such as an extraction solution) that dissolves the contaminants on the outer edge of the semiconductor wafer 400 to be processed and collects them into the extraction solution, then uses a detection instrument to measure the concentration of the contaminants in the extraction solution, and then calculates the number of atoms, ions, or molecules of the contaminants per unit area of the wafer edge according to a formula.

[0043] Take the etching and removal of the thin film layer on the outer edge of the semiconductor wafer 400 to be processed as an example. Figures 1a to 1d and Figures 2a to 3b As shown, when it is necessary to corrode and remove the thin film layer on the first side and the second side of the outer edge of the semiconductor wafer 400 to be processed, it is only necessary to pass the corresponding processing fluid that has a corrosive effect on the thin film layer into the edge micro-processing space 130 through an edge processing through-hole 112. The processing fluid flows in the edge micro-processing space 130 and directly contacts the first side surface and the second side surface of the outer edge of the semiconductor wafer 400 to be processed. The processing fluid corrodes inwardly along the direction perpendicular to the first side and the second side of the semiconductor wafer 400 to be processed, so that the thin film layer 402 on the first side surface and the second side surface of the outer edge of the semiconductor wafer 400 to be processed is continuously corroded and removed. As shown Figure 1d As shown, after processing is completed, the thin film layer 402 on the first and second side surfaces of the outer edge of the semiconductor wafer 400 is etched away, exposing the first and second side surfaces of the substrate layer 401 at the outer edge of the semiconductor wafer 400. The fluid that has processed the semiconductor wafer 400 to be processed flows out through other edge processing through holes.

[0044] As can be seen, based on the edge micro-processing space 130, the semiconductor processing apparatus 100 of this embodiment only consumes a small amount of processing fluid to achieve targeted etching of the outer edge of a semiconductor wafer 400 to be processed, significantly reducing processing costs. Furthermore, compared to conventional dry-process apparatuses, the semiconductor processing apparatus 100 of this embodiment has significant advantages in terms of simple structure, ease of use, and low operator skill requirements.

[0045] It can be seen that the semiconductor processing device 100 provided in this embodiment can achieve targeted processing of the outer edge of the semiconductor wafer 400 to be processed. In addition, by controlling the flow rate of the processing fluid in the semiconductor wafer 400 to be processed, the amount of processing fluid can be saved. Figure 2a to Figure 2bAs shown, in this embodiment, the first chamber portion 110 further includes a first recessed portion 115 formed on the inner wall surface of the first chamber portion 110 facing the microchamber, and the first recessed portion is located inside the first groove 116. The second chamber portion 120 further includes a second recessed portion 125 formed on the inner wall surface of the second chamber portion 120 facing the microchamber, and the second recessed portion is located inside the second groove 126. The first recessed portion 115 and the second recessed portion 125 are also annular. When the second chamber portion 120 is located in the closed position relative to the first chamber portion 110 and the semiconductor wafer 400 to be processed is accommodated in the microchamber, a partial area of the second side surface of the semiconductor wafer 400 to be processed covers the top of the second recess 125 to form a second inner microspace, and a partial area of the first side surface of the semiconductor wafer 400 to be processed covers the top of the first recess 115 to form a first inner microspace. The first inner microspace and the second inner microspace are located inside the edge microprocessing space 130.

[0046] Correspondingly, the first chamber portion 110 has a first inner processing through-hole communicating with the first recessed portion 115, and the second chamber portion 120 has a second inner processing through-hole communicating with the second recessed portion 125. When the edge of the semiconductor wafer 400 is etched using the edge micro-processing space 130, liquid or gas, such as water or nitrogen, can be introduced into the first recessed portion 115 and the second recessed portion 125, i.e., into the first inner micro-space and the second inner micro-space, to prevent the liquid in the edge micro-processing space 130 from penetrating inward.

[0047] Likewise, the first recessed portion 115 and the second recessed portion 125 may also be arc-shaped.

[0048] Continue to refer to Figure 2a to Figure 2b As shown, in this embodiment, when the second chamber portion 120 and the first chamber portion 110 are in the closed position, a micro chamber 140 is further formed in the middle thereof, the second chamber portion 120 has a middle processing through hole 123 communicating with the micro chamber 140, and the first chamber portion 110 has a middle processing through hole 113 communicating with the micro chamber 140.

[0049] References Figure 2bAs shown, the first chamber portion 110 has a sealing joint portion 210 located outside the first groove 116, and the second chamber portion 120 has a joint groove 122 corresponding to the sealing joint portion 210. The sealing joint portion 210 includes a guide surface 211 located at the end and an inner surface 212 located inside. When the second chamber portion 120 is in the closed position relative to the first chamber portion 110, the end of the sealing joint portion 210 extends into the joint groove 122, and the end portion of the inner surface 212 thereof seals with the groove wall of the joint groove 122. The upper end portion of the inner surface 212 forms the outer side surface of the outer edge micro-processing space 130. This can further reduce the space of the outer edge micro-processing space 130. In addition, the sealing surface between the end portion of the inner surface 212 of the sealing joint 210 and the groove wall of the joint groove 122 is located below the outer edge micro-processing space 130, and the sealing surface is perpendicular to the extension direction of the semiconductor wafer 400. Such an arrangement can make the wall surface 117 of the first chamber portion 110 located on the inner side of the first groove 116 more tightly against the first side surface of the semiconductor wafer 400 to be processed, and the wall surface 127 of the second chamber portion 120 located on the inner side of the second groove 126 more tightly against the second side surface of the semiconductor wafer 400 to be processed, thereby preventing the corrosive liquid from penetrating inward.

[0050] exist Figure 2b In an embodiment, during the closing process of the second chamber portion 120 relative to the first chamber portion 110, the inner surface 212 of the sealing joint 210 can realize the center positioning of the semiconductor wafer 140, that is, if the center of the semiconductor wafer 140 deviates from the desired center when placed, then the inner surface 212 of the sealing joint 210 can also be pressed against the semiconductor wafer 140 so that its center is corrected to the desired center. In one example, when edge processing is performed, the center deviation of the semiconductor wafer 140 is required to be no more than 0.2 mm. By adopting the method of the present invention, the center deviation can be adjusted to within 0.1 mm. The guide surface 211 can guide the sealing joint 210 into the joint groove 122 when the first chamber portion 110 and the second chamber portion 120 are closed. The sealing joint 210 can be stuck in the joint groove 122.

[0051] References Figure 2a As shown, the first chamber portion 110 includes a positioning groove 114, and the second chamber portion 120 includes a positioning post 124, which can ensure that the first chamber portion 110 and the second chamber portion 120 are properly positioned when closed. During the closing process of the first chamber portion 110 and the second chamber portion 120, the positioning post 124 first engages with the positioning groove 114 to achieve initial positioning, and then the end of the sealing joint 210 extends into the joint groove 122.

[0052] In one embodiment, the semiconductor processing device 100 of the present invention is utilized to carry out the silicon oxide wafer edge etching process. Specifically, the method may include closing the cavity, HF acid etching, DIW rinsing, IPA rinsing and nitrogen drying, and then opening the cavity to take out the wafer. The specific process of HF acid etching, DIW (deionized water) rinsing and IPA (isopropyl alcohol) rinsing can be operated with reference to the above-mentioned process. In particular, during the HF acid etching process, liquid or gas, such as water or nitrogen, may be introduced into the first recessed portion 115 and the second recessed portion 125 to prevent the liquid in the edge micro-processing space 130 from infiltrating inwardly.

[0053] As described above, the semiconductor processing device 100 of the present invention can also be used to extract and detect contaminants on the outer edge of the semiconductor wafer 400 to be processed, using various single or mixed liquids to react with the contaminants on the edge of the wafer, dissolving them and collecting them in the liquid; then, a detection instrument is used to qualitatively and quantitatively measure the contaminants in the extracted liquid, and the method is similar, so it will not be repeated here.

[0054] Second embodiment

[0055] Please refer to Figures 4a to 5b , which shows a schematic structural diagram of a semiconductor processing device 200 provided by a second embodiment of the present invention, wherein: Figure 4a is a schematic cross-sectional view of a semiconductor processing device according to a first embodiment of the present invention; Figure 4b for Figure 4a An enlarged schematic diagram of circle B in FIG; Figure 5a for Figure 4a A bottom view of a first chamber portion of a semiconductor processing apparatus; Figure 5b for Figure 4a A top view of a second chamber portion of a semiconductor processing apparatus in FIG.

[0056] The semiconductor processing device 200 in the second embodiment has a structure that is largely identical to that of the semiconductor processing device 100 in the first embodiment, and therefore the identical parts thereof are labeled identically. The main difference between the two is that the sealing joint 310 of the semiconductor processing device 200 and the sealing joint 210 of the semiconductor processing device 100 have some differences in structure.

[0057] like Figure 4b As shown, the first chamber portion 110 has the sealing joint portion 310 located outside the first groove 116 , and the second chamber portion 120 has a joint groove 122 corresponding to the sealing joint portion 210 .

[0058] The sealing joint 310 includes a guide surface 311 at its distal end, an inner surface 312 at its inner upper end, and a protrusion 313 at its distal end. When the second chamber portion 120 is in the closed position relative to the first chamber portion 110, the distal end of the sealing joint 310 extends into the engagement groove 122, with the protrusion 313 sealingly engaging the groove wall of the engagement groove 122. The inner surface 312 forms the outer side of the outer micro-processing space 130. The inner surface 312 is spaced a distance from the outer edge of the semiconductor wafer 400.

[0059] The sealing surface formed by the protrusion 313 of the sealing joint 310 and the groove wall of the joint groove 122 is located below the outer edge micro-processing space 130, and the sealing surface is perpendicular to the extension direction of the semiconductor wafer 400. Such an arrangement can make the wall surface 117 of the first chamber part 110 located on the inner side of the first groove 116 abut more tightly against the first side surface of the semiconductor wafer 400 to be processed, and the wall surface 127 of the second chamber part 120 located on the inner side of the second groove 126 abut more tightly against the second side surface of the semiconductor wafer 400 to be processed, thereby preventing the corrosive liquid from penetrating inward.

[0060] exist Figure 4b In the embodiment, during the closing process of the second chamber portion 120 relative to the first chamber portion 110, the protrusion 313 of the sealing joint 310 can realize the center positioning of the semiconductor wafer 140, that is, if the center of the semiconductor wafer 140 deviates from the desired center when it is placed, then the protrusion 313 of the sealing joint 310 can also be pressed against the semiconductor wafer 140 so that its center is corrected to the desired center.

[0061] Since there is still a distance between the inner surface 312 and the outer edge of the semiconductor wafer 400 , the semiconductor wafer 140 is not easily clamped by the sealing joint 310 when the second chamber portion 120 is separated from the first chamber portion 110 .

[0062] In another embodiment, the semiconductor wafer 140 may be centrally positioned without using the bumps 313 , that is, the bumps 313 may not contact the edge of the semiconductor wafer 140 . Instead, the center of the semiconductor wafer 140 may be centrally positioned using the edge of the wall of the first groove 116 .

[0063] Third embodiment

[0064] Figure 6 FIG. 6 is a schematic diagram showing the principle of a fluid processing device 600 according to an embodiment of the present invention.

[0065] In one embodiment, the fluid processing device 600 of the present invention can work in conjunction with the semiconductor processing device 100 or 200 of the first and second embodiments to form a semiconductor processing system. Specifically, the fluid processing device 600 can introduce fluid into the edge micro-processing space 130 through the edge processing through-holes, and can also lead fluid out of the edge micro-processing space 130 through the edge processing through-holes. In one embodiment, the extraction solution containing pollutants drawn out from the edge micro-processing space 130 can be introduced into the fluid processing device 600. The extraction solution can be diluted or otherwise processed in the fluid processing device 600 and then transferred to one or more detection instruments to measure the concentration of pollutants in the extraction solution. Of course, in other embodiments, the fluid processing device can also work in conjunction with other devices to provide fluid or lead fluid thereto.

[0066] like Figure 6 As shown, the fluid processing device 600 includes a fluid container 610 , a first rotary valve 621 , a second rotary valve 622 , and a pipeline 630 connecting the various components.

[0067] Each rotary valve 621 and 622 includes a common through hole and a plurality of optional through holes (1-8). By rotating each rotary valve 620, the common through hole can be connected to any one of the plurality of optional through holes (1-8) through an internal passage, and the optional through holes are not connected to each other. The number of the optional through holes can be selected as needed. The rotation of each rotary valve can be automatically controlled by an external control unit. When the external control unit determines that each rotary valve rotates to a certain optional through hole, the rotary valve can rotate to that certain optional through hole.

[0068] exist Figure 6In the illustrated embodiment, optional through-holes 1, 5, and 8 of the first rotary valve 621 are sealed with plugs, while optional through-hole 2 is connected to a first nitrogen port via a pipeline. This first nitrogen port can be used to input nitrogen from the top of the container 610, providing positive pressure and purging nitrogen from top to bottom into the fluid container 610. Optional through-hole 3 of the first rotary valve 621 is connected to a first sample inlet via a pipeline, which is used to introduce a first liquid sample into the fluid container 610. Optional through-hole 4 of the first rotary valve 621 is connected to a first cleaning solution inlet via a pipeline, which is used to introduce a cleaning solution into the fluid container 610. Optional through-holes 1, 5, and 8 of the second rotary valve 622 are sealed with plugs, while optional through-hole 2 is connected to a second nitrogen port via a pipeline, which is used to input nitrogen from the bottom of the container 610. When liquid is present at the bottom of the container, nitrogen input from the bottom must pass through the liquid at the bottom of the container and enter the space above the liquid. When the nitrogen passes through the liquid at the bottom of the container, it stirs the liquid and helps mix the liquid. This can be used to purge nitrogen gas from the bottom to the top of the fluid container 610. The optional through-hole 3 of the second rotary valve 622 is connected to the second sample introduction port via a pipeline. The second sample introduction port is used to deliver a second liquid sample into the fluid container 610 from the bottom of the fluid container 610. The optional through-hole 4 of the second rotary valve 622 is connected to the second cleaning solution port via a pipeline. The second cleaning solution port is used to deliver a cleaning solution from the bottom of the fluid container 610. The optional through-hole 7 of the second rotary valve 622 is connected to the sample outlet via a pipeline to draw the liquid sample from the fluid container 610. The optional through-hole 6 of the second rotary valve 622 is connected to the second waste outlet via a pipeline to draw waste liquid / waste gas (waste liquid, waste gas, or a mixture of waste gas and waste liquid). Typically, the optional through hole 1 of each rotary valve 621 and 622 is the initial selection position of the valve, and the optional through hole 1 is sealed by a plug. In this case, the various hole positions of the rotary valves 621 and 622 are not connected to each other.

[0069] In another embodiment, the nitrogen gas may also be replaced by other stable gases (such as inert gases, etc.), and the nitrogen ports may also be collectively referred to as gas ports. In this embodiment, two rotary valves are shown. In fact, three or more rotary valves may also be provided to mix and draw out a plurality of liquid samples. In any case, at least one rotary valve (such as the second rotary valve 622) has an optional through-hole connected to the sample outlet for discharging the mixed liquid sample. Each rotary valve has a connecting hole connected to the nitrogen port, a connecting hole connected to the sample introduction port, and a connecting hole connected to the cleaning solution port.

[0070] The fluid container 610 has a cavity formed within it. The top of the fluid container 610 is provided with one or more through-holes communicating with the cavity, and the bottom of the fluid container 610 is provided with one or more through-holes communicating with the cavity. One through-hole 613 located in the top (e.g., a through-hole located on the side of the top) can be connected to a common through-hole of the first rotary valve 621 via a pipeline 630. Another through-hole 613 located in the top (e.g., a through-hole located in the center of the top) can be connected to a first waste outlet via a pipeline 630 to remove waste liquid or gas. A through-hole located in the bottom can be connected to a common through-hole of the second rotary valve 621 via a pipeline 630.

[0071] Figure 7a and Figure 7b A schematic structural diagram of a fluid container 610 in one embodiment of the present invention is given. Figure 7a and Figure 7b As shown, the fluid container 610 includes a cup body 611 and a cup cover 612. The cup cover 612 and the cup body 611 can be sealed by tightening with threads. In other embodiments, the cup cover 612 can be integrally provided with the cup body 611. In this case, the "cup cover" is no longer a cover that can be removed from the cup body. The cup cover in this article is a broad concept and does not only refer to the cover of the cup. A cavity 619 is defined in the cup body 611. The cup cover 612 is provided with a plurality of through holes 613, which are connected to the cavity 619, wherein one through hole 613 is located at the top of the cup cover 612, and the other through holes are located on the side of the cup cover 612. A through hole 613 is also provided at the bottom of the cup body 611, which is connected to the cavity 619. Combined Figure 6 As shown, in Figure 7a and Figure 7b When the fluid container 610 is used in the fluid processing device 600, a through hole 613 of the cup cover 612 (such as a through hole located on the side of the cup cover) can be connected to the common through hole of the first rotary valve 621 through a pipeline 630, and a through hole 613 of the cup cover 612 (such as a through hole located at the top) can discharge waste liquid or waste gas through the pipeline 630, and a through hole located at the bottom can be connected to the common through hole of the second rotary valve 622 through the pipeline 630.

[0072] Figure 8a and Figure 8b A schematic structural diagram of the fluid container 610 in another embodiment of the present invention is given. Figure 8a and Figure 8bAs shown, the fluid container 610 includes a cup body 614, a cup head 615 located at one end of the cup body 614, and a cup tail 616 located at the other end of the cup body 614. The cup body 614, the cup head 615, and the cup tail 616 are integrated. A cavity 619 is defined in the cup body 614. A plurality of through holes 613 are provided on the cup head 615, and the through holes are connected to the cavity 619, wherein one through hole 613 is located at the top of the cup head 615, and the other through holes are located on the side of the cup head 615. A plurality of through holes 613 are provided on the cup tail 616, and the through holes are connected to the cavity 619, wherein one through hole 613 is located at the bottom of the cup body 615, and the other through holes are located on the side of the cup tail 615. In one embodiment, Figure 8c Shows the formation Figure 8a and Figure 8b Schematic diagram of the cup blank 617 of the fluid container 610 shown. Figure 8c As shown, two cup blanks 617 are welded together to form Figure 8a and Figure 8b A fluid container 610 is shown.

[0073] Combine Figure 6 As shown, in Figure 8a and Figure 8b When the fluid container 610 is used in the fluid processing device 600, a through hole 613 of the cup head 615 (for example, a through hole located on the side of the cup head 615) can be connected to the common through hole of the first rotary valve 621 through a pipeline 630, a through hole 613 of the cup head 615 (for example, a through hole located in the center of the cup head 615) can discharge waste liquid or waste gas through the pipeline 630, and a through hole of the cup tail 615 can be connected to the common through hole of the second rotary valve 622 through the pipeline 630.

[0074] The working principle of the fluid processing device 600 is described below.

[0075] 1. The fluid container 610 receives the first liquid sample through the first rotary valve 621 .

[0076] Before receiving the first liquid sample, the first rotary valve 621 and the second rotary valve 622 are both rotated to the optional through hole 1 (i.e., the optional through hole 1 and the shared through hole are connected), and there is no liquid in each pipeline. The first rotary valve 621 is rotated to the optional through hole 3, and the first liquid sample enters the fluid container 610 through the pipeline 630 and the first rotary valve 621. If there are bubbles in the first liquid sample, these bubbles will be discharged through the through hole and pipeline at the top of the fluid container 610 to remove waste liquid or waste gas. After the first liquid sample is received, the first rotary valve 621 is rotated to the optional through hole 2, and all the liquid in the pipeline 630 between the first rotary valve 621 and the fluid container 610 is sent to the fluid container 610 by nitrogen.

[0077] Second, the fluid container 610 receives the second liquid sample through the second rotary valve 622 .

[0078] Before receiving the second liquid sample, the first rotary valve 621 and the second rotary valve 622 are both rotated to the optional through hole 1 (i.e., the optional through hole 1 and the shared through hole are connected), and there is no liquid in each pipeline. The second rotary valve 622 is rotated to the optional through hole 3, and the second liquid sample enters the fluid container 610 through the pipeline 630 and the second rotary valve 622. If there are bubbles in the second liquid sample, these bubbles will be removed through the through hole and pipeline at the top of the fluid container 610 to remove waste liquid or waste gas. After the second liquid sample is received, the second rotary valve 622 is rotated to the optional through hole 2, and all the liquid in the pipeline 630 between the second rotary valve 622 and the fluid container 610 is sent to the fluid container 610 by nitrogen.

[0079] 3. The fluid container 610 mixes the liquid sample.

[0080] The second rotary valve 622 is rotated to the optional through hole 2, and nitrogen gas is introduced into the fluid container 610 for bubbling. The liquid samples (e.g., the first liquid sample and the second liquid sample) in the fluid container 610 are mixed uniformly by bubbling. After the bubbling is completed, the second rotary valve 622 is switched to the optional through hole 1.

[0081] 4. Draw the liquid sample out of the fluid container 610.

[0082] The second rotary valve 622 is rotated to the optional through-hole 7 , and the liquid sample in the fluid container 610 is drawn out through the optional through-hole 7 of the second rotary valve 622 .

[0083] 5. Cleaning the fluid container 610.

[0084] After the liquid sample in the fluid container 610 is drawn out, or when needed, the first rotary valve 621 can be rotated to the optional through-hole 4 to introduce the cleaning solution into the fluid container 610. The excess cleaning solution can overflow through the through-hole at the top of the fluid container 610 for waste removal. The second rotary valve 622 can also be simultaneously switched to the optional through-hole 6 to allow the cleaning solution in the fluid container 610 to be discharged into the waste. The first rotary valve 621 can be switched to the optional through-hole 2 to blow the cleaning solution in the connecting pipeline 630 between the first rotary valve 621 and the fluid container 610 into the fluid container 610.

[0085] Switch the second rotary valve 622 to the optional through hole 4 to introduce the cleaning solution into the fluid container 610. The excess cleaning solution can overflow through the through hole at the top of the fluid container 610 to discharge the waste liquid. Switch the second rotary valve 622 to the optional through hole 2 to blow the cleaning solution in the connecting pipeline 630 between the second rotary valve 622 and the fluid container 610 into the fluid container 610.

[0086] Finally, the second rotary valve 622 is switched to the optional through hole 6 to drain all the cleaning solution in the fluid container 610 into the waste liquid. The first rotary valve 621 and the second rotary valve 622 are switched to the optional through hole 1 to complete the cleaning of the fluid container 610 and the pipeline 630.

[0087] In this way, the fluid container 610 can conveniently realize the introduction, mixing and extraction of liquid samples, as well as the cleaning of the fluid container 620.

[0088] The fluid container 610 can be connected to multiple rotary valves and set with multiple liquid sample inlets for receiving liquid samples from different sources. Each passage is equipped with a corresponding cleaning port (a port for connecting a cleaning solution) for cleaning the fluid container 610 and the connecting pipelines to prevent cross contamination.

[0089] The lowest point of the bottom of the fluid container 610 has a through hole connected to a rotary valve for drawing out liquid samples and draining the cleaning solution in the fluid container 610. It can also be configured as an inlet for liquid samples. Multiple liquid sample outlets can also be provided for transferring samples to different liquid sample consumption ends.

[0090] For non-uniform liquid samples, such as those containing bubbles, the bubbles are directly discharged through the through-hole at the top center of the fluid container 610 after entering the fluid container 610. If the composition ratios of the liquid sample differ before and after entering the fluid container 610, the liquid sample will initially mix naturally. If this natural mixing is uneven, nitrogen bubbling can be introduced through the through-hole at the bottom center of the fluid container 610 to further mix the sample. This design ensures that the liquid sample is uniform and bubble-free upon exiting, facilitating ease of use at the user end.

[0091] The total capacity of the fluid container 610 is typically less than 200 ml, such as 5 ml or 30 ml. The fluid processing device 600 of the present invention can be used to mix multiple liquid samples into a desired mixed liquid sample in real time, and the mixed liquid sample can be supplied to an external device, such as a semiconductor processing device, thereby achieving online real-time processing.

[0092] In one embodiment, the first liquid sample can be an extraction solution containing contaminants drawn from the edge micro-processing space 130, and the second liquid sample can be a dilution solution. The liquid sample drawn from the sample outlet can be introduced into a detection instrument to measure the concentration of contaminants in the extraction solution. This allows for online, real-time detection of edge contaminants.

[0093] According to another aspect of the present invention, a fluid processing method based on the fluid processing device 600 is provided, comprising: receiving a first liquid sample and a second liquid sample in the fluid container 610 via a first rotary valve 621; mixing the liquid samples in the fluid container 610; draining the liquid samples from the fluid container 610; and cleaning the fluid processing device 600. The details are similar to those described for the fluid processing device 600 and will not be repeated here.

[0094] The above description fully discloses the specific embodiments of the present invention. It should be noted that any modifications made by those skilled in the art to the specific embodiments of the present invention do not depart from the scope of the claims. Accordingly, the scope of the claims of the present invention is not limited to the specific embodiments described above.

Claims

1. A fluid processing device, characterized in that: It includes: pipelines; at least two rotary valves, each comprising a common through-hole and a plurality of optional through-holes, wherein the common through-hole can be connected to one of the plurality of optional through-holes via an internal passage by rotating the rotary valve, wherein one of the plurality of optional through-holes of each rotary valve is connected to a gas port via a pipeline to receive gas, and / or one of the optional through-holes is connected to a sample introduction port via a pipeline to receive a liquid sample, and / or one of the optional through-holes is connected to a cleaning solution port via a pipeline to receive a cleaning solution, wherein one of the optional through-holes of one rotary valve is connected to a sample outlet via a pipeline to discharge the liquid sample; and A fluid container has a cavity formed therein, one or more through holes communicating with the cavity are provided at its top, and one or more through holes communicating with the cavity are provided at its bottom, wherein one through hole at the top is communicated with a common through hole of one of the rotary valves through a pipeline, and one through hole at the bottom is communicated with a common through hole of another of the rotary valves through a pipeline.

2. The fluid processing device according to claim 1, characterized in that: A through hole at the top of the fluid container is connected to a first waste outlet through a pipeline to discharge waste gas / waste liquid; An optional through-hole of the rotary valve communicates with the through-hole at the bottom of the fluid container and is connected to a second waste outlet through a pipeline to discharge waste gas / liquid.

3. The fluid processing device according to claim 2, characterized in that: Cleaning the fluid processing device, wherein the cleaning comprises: Rotate each rotary valve that needs to be cleaned to the optional through-hole connected to the cleaning solution port, introduce the cleaning solution into the fluid container through the cleaning solution port, and allow the excess cleaning solution to overflow through the through-hole connected to the first waste outlet at the top of the fluid container. Switch each rotary valve to the optional through-hole connected to the gas port, and blow the cleaning solution in the connecting pipeline between each rotary valve and the fluid container into the fluid container; The rotary valve connected to the through hole at the bottom of the fluid container is switched to an optional through hole connected to the second waste outlet, so that all the cleaning solution in the fluid container is discharged through the second waste outlet.

4. The fluid processing device according to claim 1, characterized in that: Introducing a liquid sample into the cavity of the fluid container, comprising: rotating a rotary valve to an optional through-hole communicating with the sample introduction port; The sample introduction port introduces the liquid sample into the cavity of the fluid container through the pipeline and the rotary valve. If there are bubbles in the liquid sample, these bubbles will be discharged through the through hole at the top of the fluid container that is connected to the first waste outlet. After the liquid sample is received, the rotary valve is rotated to the optional through hole connected to the gas port, and the liquid sample in the pipeline between the rotary valve and the fluid container is completely sent into the cavity of the fluid container through the gas.

5. The fluid processing device according to claim 4, characterized in that: At least two liquid samples are introduced into the cavity of the fluid container, and then the liquid samples are mixed, wherein the mixing comprises: The rotary valve connected to the through hole at the bottom of the fluid container is rotated to the optional through hole connected to the gas port, and the gas is introduced into the fluid container for bubbling, so that the liquid sample in the fluid container is evenly mixed by the bubbling method.

6. The fluid processing device according to claim 4, characterized in that: The rotary valve connected to the through-hole at the bottom of the fluid container is rotated to an optional through-hole connected to the sample outlet, and the liquid sample in the fluid container is drawn out through the sample outlet.

7. The fluid processing device according to claim 1, characterized in that: The fluid container includes a cup body and a cup cover, wherein the cup cover and the cup body can be screwed together to seal, a cavity is defined in the cup body, a plurality of through holes communicating with the cavity are formed on the cup cover, and a through hole communicating with the cavity is also provided at the bottom of the cup body, wherein the through hole communicates with the cavity, or; The fluid container includes a cup body, a cup head located at one end of the cup body, and a cup tail located at the other end of the cup body. A cavity is defined in the cup body, a plurality of through holes connected to the cavity are opened on the cup head, and a plurality of through holes connected to the cavity are opened on the cup tail. The fluid container is formed by welding two cup blanks together.

8. A fluid processing method based on the fluid processing device according to any one of claims 1 to 2 and 7, characterized in that: include: Introducing a liquid sample into the cavity of the fluid container, the process comprising: rotating a rotary valve to a selectable through-hole communicating with the sample introduction port; The sample introduction port introduces the liquid sample into the cavity of the fluid container through the pipeline and the rotary valve. If there are bubbles in the liquid sample, these bubbles will be discharged through the through-hole at the top of the fluid container that is connected to the first waste outlet. After the liquid sample is received, the rotary valve is rotated to the optional through-hole connected to the gas port, and the liquid sample in the pipeline between the rotary valve and the fluid container is completely sent into the cavity of the fluid container through the gas.

9. The fluid processing method according to claim 8, characterized in that: It also includes: At least two liquid samples are introduced into the cavity of the fluid container, and then the liquid samples are mixed, wherein the mixing includes: rotating a rotary valve connected to a through hole at the bottom of the fluid container to an optional through hole connected to the gas port, passing the gas into the fluid container containing the liquid samples for bubbling, and uniformly mixing the liquid samples in the fluid container by bubbling.

10. The fluid processing method according to claim 9, characterized in that: It also includes: The rotary valve connected to the through-hole at the bottom of the fluid container is rotated to an optional through-hole connected to the sample outlet, and the liquid sample in the fluid container is drawn out through the sample outlet.

11. The fluid processing method according to claim 10, characterized in that: It also includes: The fluid processing device is cleaned, wherein the cleaning includes: rotating each rotary valve that needs to be cleaned to an optional through-hole connected to a cleaning solution port, introducing a cleaning solution into the fluid container through the cleaning solution port, and allowing excess cleaning solution to overflow through a through-hole at the top of the fluid container connected to a first waste outlet; switching each rotary valve to an optional through-hole connected to a gas port, and blowing the cleaning solution in a connecting pipeline between each rotary valve and the fluid container into the fluid container; switching a rotary valve connected to a through-hole at the bottom of the fluid container to an optional through-hole connected to a second waste outlet, and discharging all cleaning solution in the fluid container through the second waste outlet.

12. A semiconductor processing system comprising: A semiconductor processing apparatus includes: a first chamber portion; and a second chamber portion movable relative to the first chamber portion between an open position and a closed position, wherein when the second chamber portion is in the closed position relative to the first chamber portion, a microchamber is formed between the first chamber portion and the second chamber portion, wherein a semiconductor wafer can be accommodated in the microchamber, and when the second chamber portion is in the open position relative to the first chamber portion, the semiconductor wafer can be taken out of or placed in the microchamber. The first chamber portion has a first groove formed on an inner wall surface of the first chamber portion facing the microchamber, and the second chamber portion has a second groove formed on an inner wall surface of the second chamber portion facing the microchamber. When the second chamber portion is in the closed position relative to the first chamber portion and the semiconductor wafer is accommodated in the microchamber, the first groove and the second groove communicate with each other and together form an edge microprocessing space, wherein an outer edge of the semiconductor wafer accommodated in the microchamber extends into the edge microprocessing space, and the edge microprocessing space is communicated with the outside through an edge processing through-hole, and a fluid enters or flows out of the edge microprocessing space through the edge processing through-hole. A fluid processing device according to any one of claims 1 to 7, working in conjunction with the semiconductor processing device.

13. The semiconductor processing system according to claim 12, wherein: The fluid processing device introduces the liquid sample introduced from the sample outlet into the edge micro-processing space.

14. The semiconductor processing system according to claim 12, wherein: The first chamber portion has a sealing joint portion located outside the first channel, and the second chamber portion has a joint groove corresponding to the sealing joint portion; The first side surface, the second side surface and the outer end surface of the outer edge of the semiconductor wafer are exposed to the edge micro-processing space, one or more of the edge processing through holes serve as a fluid inlet, and one or more of the edge processing through holes serve as a fluid outlet. The edge micro-processing space is annular or arc-shaped, and the outer edge of the semiconductor wafer extends into the edge micro-processing space. The edge micro-processing space is a closed space and communicates with the outside through an edge processing through-hole; The top surface of the inner sidewall of the first groove abuts against the first side surface of the semiconductor wafer near the first chamber portion, and the top surface of the inner sidewall of the second groove abuts against the second side surface of the semiconductor wafer near the second chamber portion.

15. The semiconductor processing system according to claim 12, wherein: The semiconductor processing device will introduce the solution containing contaminants drawn out from the edge microprocessing space into the fluid container as a liquid sample through an optional sample introduction hole of a rotary valve connected to the fluid container, and then pass through an optional sample outlet hole of a rotary valve to be transmitted to one or more detection instruments for qualitative and quantitative measurement and analysis of the contaminants in the solution, or transmit it to an automatic sample collection device.

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