Chemical vapor deposition furnace and its air intake mechanism and air intake method

Abstract

The present application relates to a chemical vapor deposition furnace and its air intake mechanism and air intake method. The chemical vapor deposition furnace includes a furnace body, which is provided with a receiving cavity for accommodating wafers. The air intake mechanism includes: at least one air intake pipe, which is provided on the furnace body and located outside the receiving cavity; at least one air intake plate, which is provided in the receiving cavity; the first end of each air intake plate extends out of the furnace body and is connected to the air intake pipe, and the second end of each air intake plate extends toward the bottom of the receiving cavity; each air intake plate is provided with an air outlet group on the side facing the wafer in the receiving cavity, and the air outlet group includes multiple air outlets respectively connected to the air intake pipe and the receiving cavity, and the multiple air outlets on the same air intake plate are arranged at intervals around the wafer in the receiving cavity. The air intake mechanism can be used to diffuse the reaction gas from multiple directions toward the surface of the wafer in the receiving cavity, thereby improving the uniformity of the thickness of the thin film layer deposited on the surface of the wafer.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a chemical vapor deposition furnace and an air intake mechanism and an air intake method thereof. Background Art

[0002] In related technologies, chemical vapor deposition (CVD) or atomic layer deposition (ALD) is typically performed on wafers using a chemical vapor deposition (CVD) furnace. The CVD furnace is equipped with an inlet pipe for introducing reactant gases into the CVD furnace, allowing the reactant gases to diffuse onto the surface of the wafer placed in the CVD furnace, thereby depositing the thin film on the wafer surface. However, the thickness uniformity of the thin film layers deposited on the surface of the wafers prepared using this conventional CVD furnace is poor. Summary of the Invention

[0003] Based on this, it is necessary to provide a chemical vapor deposition furnace and its air intake mechanism and air intake method to address the problem of poor uniformity in the thickness of the thin film layer deposited on the surface of the wafer prepared by the traditional chemical vapor deposition furnace.

[0004] According to one aspect of the present application, an air intake mechanism for a chemical vapor deposition furnace is provided. The chemical vapor deposition furnace includes a furnace body, the furnace body is provided with an accommodating cavity for accommodating wafers, and the air intake mechanism includes:

[0005] At least one air inlet pipe, provided on the furnace body and located outside the accommodating cavity;

[0006] At least one air inlet plate, disposed in the accommodating cavity;

[0007] Each of the air inlet plates has a first end and a second end that are oppositely disposed along the axis of the furnace body;

[0008] The first end of each of the air intake plates extends out of the furnace body and is connected to the air intake pipe, and the second end of each of the air intake plates extends toward the bottom of the accommodating cavity;

[0009] Each of the air inlet plates is provided with an air outlet group on the side facing the wafer in the accommodating cavity, and the air outlet group includes multiple air outlets respectively connected to the air inlet pipe and the accommodating cavity. The multiple air outlets on the same air inlet plate are arranged at intervals around the wafer in the accommodating cavity.

[0010] In one embodiment, the accommodating cavity extends along the axial direction of the furnace body, and a plurality of wafers are arranged in the accommodating cavity at intervals along the axial direction of the furnace body;

[0011] A plurality of gas outlet groups are provided on a side of each gas inlet plate facing the wafer in the accommodating chamber and are spaced apart along the axial direction of the furnace body.

[0012] In one embodiment, each of the air inlet plates has an air inlet cavity respectively connected to the air inlet pipe and the air outlet, and each of the air inlet plates is provided with an arc-shaped air outlet surface on a side facing the wafer in the accommodating cavity, and the arc-shaped air outlet surface is concave inwardly along the radial direction of the furnace body;

[0013] The air outlet group is arranged on the corresponding arc-shaped air outlet surface, and the multiple air outlets of the same air outlet group are arranged at intervals along the arc length direction of the arc-shaped air outlet surface.

[0014] In one embodiment, a preset gap is formed between a side of each of the air inlet plates facing away from the wafer and a side wall of the accommodating chamber.

[0015] In one embodiment, a plurality of the air intake plates are provided, and the plurality of the air intake plates are spaced apart and arranged around the wafer in the accommodating cavity.

[0016] In one embodiment, the air intake mechanism further includes a diverter component provided on the furnace body and located outside the accommodating cavity, and the first ends of the plurality of air intake plates are connected to the air intake pipe through the diverter component;

[0017] The diversion component has a diversion cavity communicated with the air inlet pipe, and a plurality of diversion outlets communicated with the diversion cavity, and each of the diversion outlets is communicated with the plurality of air outlets of the corresponding air inlet plate.

[0018] In one embodiment, the flow diversion component includes a flow diversion body and a plurality of flow diversion tube groups connected to the flow diversion body and corresponding to the air inlet plates one by one;

[0019] Each of the shunt tube groups includes a plurality of shunt tubes;

[0020] The first end of each of the air inlet plates is connected to the diversion body through a plurality of diversion tubes of the corresponding diversion tube group;

[0021] The diversion cavity is formed in the diversion body, and the diversion outlet is formed at the connection between the diversion tube and the diversion body.

[0022] According to another aspect of the present application, the present application provides a chemical vapor deposition furnace, comprising the above-mentioned gas intake mechanism for the chemical vapor deposition furnace.

[0023] In one embodiment, the chemical vapor deposition furnace further includes a gas outlet mechanism, and the gas outlet mechanism includes:

[0024] A plurality of exhaust gas outlets are provided on the furnace body and outside the accommodating cavity, and each of the exhaust gas outlets is respectively connected with the accommodating cavity and the external environment.

[0025] According to another aspect of the present application, the present application further provides an air intake method, which uses the above-mentioned air intake mechanism for a chemical vapor deposition furnace or the above-mentioned chemical vapor deposition furnace to perform air intake, wherein a plurality of air intake plates are provided, and the plurality of air intake plates are arranged at intervals around the wafer in the accommodating cavity, and each of the air intake plates has an air intake cavity respectively connected to the air intake pipe and the air outlet. The air intake method includes:

[0026] Simultaneously introduce reaction gas into the air inlet cavities of the plurality of air inlet plates; or

[0027] The air intake method includes:

[0028] The reaction gas is introduced into the air inlet cavities of the plurality of air inlet plates in sequence.

[0029] The above-mentioned chemical vapor deposition furnace and its air intake mechanism and air intake method, when the air intake mechanism for the chemical vapor deposition furnace is in use, the reaction gas can be introduced into the air intake pipe, so that the reaction gas can diffuse toward the surface of the wafer in the accommodating cavity through the multiple air outlets on each air intake plate. Since the multiple air outlets on the same air intake plate are arranged at intervals around the wafer in the accommodating cavity, the reaction gas can diffuse toward the surface of the wafer in the accommodating cavity from multiple directions, thereby improving the uniformity of the thickness of the thin film layer deposited on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic structural diagram of a chemical vapor deposition furnace in one embodiment of the present application is shown;

[0031] Figure 2 A partial structural diagram of a chemical vapor deposition furnace in one embodiment of the present application is shown;

[0032] Figure 3 A schematic structural diagram of an air intake mechanism for a chemical vapor deposition furnace in one embodiment of the present application is shown;

[0033] Figure 4 A schematic structural diagram of an air intake plate in an embodiment of the present application is shown.

[0034] In the figure: 10, chemical vapor deposition furnace; 110, furnace body; 111, accommodating chamber; 210, air inlet pipe; 220, air inlet plate; 221, first end; 222, second end; 223, air outlet; 224, curved air outlet surface; 225, curved back surface; 230, diverter component; 231, diverter body; 232, diverter pipe; 241, exhaust outlet; 242, exhaust pipe; 250, mounting rack; 20, wafer. DETAILED DESCRIPTION

[0035] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0036] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0037] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0038] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0039] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0040] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0041] After research, the inventors of this application found that the outlet direction of the air inlet pipe of a traditional chemical vapor deposition furnace is relatively single, which causes the reaction gas entering the chemical vapor deposition furnace to diffuse from one direction to the surface of the wafer in the chemical vapor deposition furnace, resulting in a large difference in the thickness and composition of the thin film layer deposited on the surface of the wafer close to the air inlet pipe and the thickness and composition of the thin film layer deposited on the surface of the wafer away from the air inlet pipe, which in turn leads to poor uniformity in the thickness of the thin film layer deposited on the surface of the wafer.

[0042] In order to solve the problem of poor uniformity in the thickness of the thin film layer deposited on the surface of the wafer prepared using the traditional chemical vapor deposition furnace, the inventor of this application has designed an air intake mechanism for a chemical vapor deposition furnace after in-depth research. The chemical vapor deposition furnace has a accommodating cavity for accommodating the wafer. The air intake mechanism includes at least one air intake pipe and at least one air intake plate. The multiple air outlets on the air intake plate are arranged around the wafer at intervals, so that the reaction gas can diffuse toward the surface of the wafer from multiple directions through the multiple air outlets, thereby improving the uniformity of the thickness of the thin film layer deposited on the surface of the wafer.

[0043] Figure 1 FIG. 1 shows a schematic structural diagram of a chemical vapor deposition furnace 10 in an embodiment of the present application. Figure 2 A partial structural diagram of a chemical vapor deposition furnace 10 in one embodiment of the present application is shown.

[0044] See also Figure 1 and Figure 2 The chemical vapor deposition furnace 10 includes a furnace body 110 , and the furnace body 110 is provided with a receiving cavity 111 for accommodating the wafer 20 .

[0045] Figure 3 A schematic structural diagram of an air intake mechanism for a chemical vapor deposition furnace 10 in one embodiment of the present application is shown.

[0046] See also Figure 1-Figure 3An air intake mechanism for a chemical vapor deposition furnace 10 provided in one embodiment of the present application includes at least one air intake pipe 210 and at least one air intake plate 220. The air intake pipe 210 is arranged on the furnace body 110 and is located outside the accommodating cavity 111. The at least one air intake plate 220 is arranged inside the accommodating cavity 111.

[0047] Each air intake plate 220 has a first end 221 and a second end 222 arranged opposite to each other along the axial direction of the furnace body 110. The first end 221 of each air intake plate 220 extends out of the furnace body 110 and is connected to the air intake pipe 210. The second end 222 of each air intake plate 220 extends toward the bottom of the accommodating cavity 111.

[0048] Each air inlet plate 220 is provided with an outlet group on the side facing the wafer 20 in the accommodating cavity 111. The outlet group includes multiple air outlets 223 respectively connected to the air inlet pipe 210 and the accommodating cavity 111. The multiple air outlets 223 on the same air inlet plate 220 are arranged at intervals around the wafer 20 in the accommodating cavity 111.

[0049] When the air intake mechanism for the chemical vapor deposition furnace 10 is in use, the reaction gas can be introduced into the air intake pipe 210, so that the reaction gas can diffuse toward the surface of the wafer 20 in the accommodating cavity 111 through the multiple air outlets 223 on each air intake plate 220. Since the multiple air outlets 223 on the same air intake plate 220 are arranged at intervals around the wafer 20 in the accommodating cavity 111, the reaction gas can diffuse from multiple directions toward the surface of the wafer 20 in the accommodating cavity 111, thereby improving the uniformity of the thickness of the thin film layer deposited on the surface of the wafer 20.

[0050] It should be noted that the number of the air inlet pipe 210 can be one or more, and different reaction gases can be introduced into the multiple air inlet pipes 210 respectively, and there is no specific limitation here. Figure 1 and Figure 2 In the embodiment shown, the number of the air inlet pipes 210 is 5, and different reaction gases can be introduced into the 5 air inlet pipes 210 as needed. The reaction gases include but are not limited to O3, TMA (trimethylamine), H2O, inert carrier gas (such as N2) and NH3 (ammonia), etc.

[0051] In some embodiments of this application, please refer to Figure 1 and Figure 2There are multiple air inlet plates 220, and the multiple air inlet plates 220 are arranged at intervals around the wafer 20 in the accommodating chamber 111. With this arrangement, the reaction gas can be introduced into the air outlets 223 of the multiple air inlet plates 220 at the same time, or the reaction gas can be introduced into the air outlets 223 of the multiple air inlet plates 220 one after another. When the reaction gas is introduced into the air outlets 223 of the multiple air inlet plates 220 at the same time, the efficiency and uniformity of the reaction gas entering the furnace body 110 can be improved, thereby improving the deposition efficiency of the thin film layer deposited on the surface of the wafer 20, and also improving the quality of the thin film layer deposited on the surface of the wafer 20. When the reaction gas is introduced into the air outlets 223 of the multiple air inlet plates 220 one after another, gas convection and disturbance caused by the simultaneous introduction of reaction gas into different air inlet plates 220 can be avoided, which can further improve the quality of the thin film layer deposited on the surface of the wafer 20. In this way, a suitable air intake method can be selected according to actual needs.

[0052] In some embodiments of this application, please refer to Figure 1 and Figure 2 The accommodating cavity 111 extends along the axial direction of the furnace body 110, and a plurality of wafers 20 are arranged in the accommodating cavity 111 at intervals along the axial direction of the furnace body 110. Each air inlet plate 220 is provided with a plurality of air outlet groups arranged in the axial direction of the furnace body 110 on the side facing the wafers 20 in the accommodating cavity 111.

[0053] It can be understood that the gas outlet group and the wafer 20 can be made to correspond one to one. In this way, the reaction gas introduced into the gas inlet plate 220 can be diffused toward the surface of the corresponding wafer 20 through the multiple gas outlets 223 of the gas outlet group respectively, and a thin film layer can be deposited on the surface of the wafer 20 one by one. The uniformity of the thickness of the thin film layer deposited on the surfaces of multiple wafers 20 can also be improved.

[0054] In some embodiments of this application, please refer to Figure 2 、 Figure 3 and Figure 4 Each air inlet plate 220 has an air inlet cavity that communicates with the air inlet pipe 210 and the air outlet 223. Each air inlet plate 220 has a curved air outlet surface 224 on the side facing the wafer 20 in the accommodating cavity 111. The curved air outlet surface 224 is recessed inwardly along the radial direction of the furnace body 110. The air outlet groups are arranged on the corresponding curved air outlet surfaces 224. The multiple air outlets 223 in the same air outlet group are spaced apart along the arc length of the curved air outlet surface 224.

[0055] The arc-shaped gas outlet surface 224 is recessed inwardly along the radial direction of the furnace body 110 . This can avoid convection and disturbance between the reaction gases flowing out from any two gas outlets 223 in the gas outlet group arranged on the arc-shaped gas outlet surface 224 , which is more conducive to the uniform diffusion of the reaction gases and can also better improve the quality of the thin film layer deposited on the surface of the wafer 20 .

[0056] In some embodiments of the present application, a preset gap is formed between a side of each air inlet plate 220 facing away from the wafer 20 and a sidewall of the accommodating chamber 111 .

[0057] Such a configuration can maintain a certain gap between the air intake plate 220 placed in the furnace body 110 and the inner wall of the furnace body 110, thereby preventing the air intake plate 220 from being slightly deformed due to thermal stress during the deposition process and scratching the inner wall of the furnace body 110. It can also prevent a large number of nano / micron particles generated by scratching from falling onto the wafer 20, thereby avoiding affecting the yield of the chip.

[0058] In some embodiments of this application, please refer to Figure 4 Each air inlet plate 220 is provided with an arc-shaped back surface 225 opposite to the arc-shaped air outlet surface 224 on the side facing away from the wafer 20. The arc-shaped back surface 225 is recessed outward along the radial direction of the furnace body 110. The arc-shaped back surface 225 has the same curvature as the inner wall of the furnace body 110, which can better prevent the air inlet plate 220 from scratching the inner wall of the furnace body 110 due to slight deformation caused by thermal stress during the deposition process.

[0059] In some embodiments of this application, please refer to Figure 1 and Figure 2 The air intake mechanism also includes a diverter component 230 provided on the furnace body 110 and located outside the accommodating cavity 111. The first ends 221 of multiple air intake plates 220 are connected to the air intake pipe 210 through the diverter component 230. The diverter component 230 has a diverter cavity connected to the air intake pipe 210, and multiple diverter outlets connected to the diverter cavity. Each diverter outlet is connected to multiple air outlets 223 of the corresponding air intake plate 220.

[0060] Such a configuration allows the reaction gas entering the air inlet pipe 210 to flow into the diversion cavity of the diversion component 230 and flow out through multiple diversion outlets. The reaction gas flowing out of the diversion outlet can flow to the multiple outlets 223 of the corresponding air inlet plate 220, so that the reaction gas can flow evenly to the outlets 223 of multiple air inlet plates 220, which is beneficial to improving the quality of the thin film layer deposited on the surface of the wafer 20.

[0061] In some embodiments of this application, please refer to Figure 1 and Figure 2The diversion component 230 includes a diversion body 231 and a plurality of diversion tube groups connected to the diversion body 231 and corresponding one-to-one to the air inlet plate 220. Each diversion tube group includes a plurality of diversion tubes 232. The first end 221 of each air inlet plate 220 is connected to the diversion body 231 through the plurality of diversion tubes 232 of the corresponding diversion tube group. The diversion cavity is formed in the diversion body 231, and the diversion outlet is formed at the connection between the diversion tube 232 and the diversion body 231.

[0062] Such a setting allows the reaction gas entering the air inlet pipe 210 to flow into the diversion cavity of the diversion component 230, and flow to the multiple air outlets 223 of the corresponding air inlet plate 220 through the multiple diversion pipes 232 of the diversion pipe group, so that the reaction gas can flow to the air inlet plate 220 more evenly, the diversion effect of the reaction gas is better, and it is also beneficial to improve the quality of the thin film layer deposited on the surface of the wafer 20.

[0063] In some embodiments, the plurality of air inlet pipes 210 are all connected to the air inlet side of the diverter body 231. Figure 1 and Figure 2 In the illustrated embodiment, the plurality of air inlet pipes 210 are all connected to the top end of the flow dividing body 231 .

[0064] In some embodiments of the present application, an embodiment of the present application provides a chemical vapor deposition furnace 10 , comprising the above-mentioned air intake mechanism for the chemical vapor deposition furnace 10 .

[0065] In some embodiments of this application, please refer to Figure 2 and Figure 4 The chemical vapor deposition furnace 10 also includes a gas outlet mechanism, which includes multiple waste gas outlets 241. The multiple waste gas outlets 241 are arranged on the furnace body 110 and located outside the accommodating cavity 111. Each waste gas outlet 241 is respectively connected to the accommodating cavity 111 and the external environment.

[0066] During the deposition process, excess reaction gas generated after the deposition reaction can be discharged out of the chemical vapor deposition furnace 10 through the exhaust gas outlet 241 .

[0067] See also Figure 3 and Figure 4 The furnace body 110 is provided with a plurality of exhaust pipes 242 corresponding to the exhaust outlets 241 one by one. The exhaust pipes 242 are respectively connected to the external environment and the corresponding exhaust outlets 241. In this way, the excess reaction gas generated after the deposition reaction can be discharged out of the chemical vapor deposition furnace 10 through the exhaust outlets 241 and the corresponding exhaust pipes 242.

[0068] In some embodiments of this application, please refer to Figure 2At least one mounting rack 250 is provided in the furnace body 110 . The mounting rack 250 is provided with a mounting groove for mounting the wafer 20 . The wafer 20 can be mounted on the mounting rack 250 through the mounting groove.

[0069] There can be one or more mounting racks 250, without any specific limitation, as long as the plurality of wafers 20 can be arranged at intervals along the axis of the furnace body 110 within the receiving cavity 111 of the furnace body 110. For example, three mounting racks 250 are arranged at equal intervals around the central axis of the furnace body 110, and each mounting rack 250 has a plurality of mounting slots arranged at intervals along the axis of the furnace body 110 on the side facing the wafers 20. Each wafer 20 is mounted on one of the three mounting racks 250, so that the plurality of wafers 20 can be arranged at intervals along the axis of the furnace body 110 within the receiving cavity 111 of the furnace body 110.

[0070] A plurality of wafers 20 are disposed within the accommodating chamber 111 and spaced apart along the axis of the furnace body 110. An embodiment of the present application provides an air intake mechanism for a chemical vapor deposition furnace 10, comprising a plurality of air intake pipes 210 and a plurality of air intake plates 220. The plurality of air intake pipes 210 are disposed on the furnace body 110 and outside the accommodating chamber 111. The plurality of air intake plates 220 are disposed within the accommodating chamber 111 and are spaced apart around the wafers 20 within the accommodating chamber 111. Each air intake plate 220 has a first end 221 and a second end 222 that are disposed opposite each other along the axis of the furnace body 110. The first end 221 of each air intake plate 220 extends outside the furnace body 110 and is connected to the plurality of air intake pipes 210. The second end 222 of each air intake plate 220 extends toward the bottom of the accommodating chamber 111. Each air inlet plate 220 is provided with a plurality of air outlet groups spaced apart along the axial direction of the furnace body 110 on one side facing the wafer 20 in the accommodating cavity 111. Each air outlet group includes a plurality of air outlets 223 respectively connected to the air inlet pipe 210 and the accommodating cavity 111. The plurality of air outlets 223 on the same air inlet plate 220 are spaced apart around the wafer 20 in the accommodating cavity 111.

[0071] When the chemical vapor deposition furnace 10 is in use, the reaction gas introduced into the air inlet plate 220 can be diffused toward the surface of the corresponding wafer 20 through the multiple outlet ports 223 of the outlet port group, so that a thin film layer can be deposited on the surface of the wafer 20 one by one, thereby improving the uniformity of the thickness of the thin film layer deposited on the surfaces of multiple wafers 20.

[0072] An embodiment of the present application provides an air intake method, which uses the air intake mechanism for the chemical vapor deposition furnace 10 or the chemical vapor deposition furnace 10 to perform air intake. A plurality of air intake plates 220 are provided. The plurality of air intake plates 220 are arranged at intervals around the wafer 20 in the accommodating cavity 111. Each air intake plate 220 has an air intake cavity respectively connected to the air intake pipe 210 and the air outlet 223. The air intake method includes:

[0073] The reaction gas is introduced into the air inlet cavities of the multiple air inlet plates 220 at the same time.

[0074] By using this air intake method, the efficiency and uniformity of the reaction gas entering the furnace body 110 can be improved, thereby improving the deposition efficiency of the thin film layer deposited on the surface of the wafer 20 and improving the quality of the thin film layer deposited on the surface of the wafer 20.

[0075] In some other embodiments, the air intake method includes:

[0076] The reaction gas is introduced into the air inlet cavities of the plurality of air inlet plates 220 in sequence.

[0077] By using this air intake method, gas convection and disturbance caused by the simultaneous introduction of reaction gases through different air intake plates 220 can be avoided, and the quality of the thin film layer deposited on the surface of the wafer 20 can be further improved.

[0078] In this way, a suitable air intake method can be selected according to actual needs.

[0079] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0080] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. An air intake mechanism for a chemical vapor deposition furnace, the chemical vapor deposition furnace comprising a furnace body (110), the furnace body (110) being provided with a receiving cavity (111) for receiving a wafer (20), characterized in that: The air intake mechanism comprises: At least one air inlet pipe (210) is provided on the furnace body (110) and is located outside the accommodating cavity (111); At least one air intake plate (220) is disposed in the accommodating cavity (111); Each of the air inlet plates (220) has a first end (221) and a second end (222) that are arranged opposite to each other along the axis direction of the furnace body (110); The first end (221) of each air intake plate (220) extends out of the furnace body (110) and is connected to the air intake pipe (210), and the second end (222) of each air intake plate (220) extends toward the bottom of the accommodating cavity (111); Each of the air inlet plates (220) is provided with an air outlet group on a side facing the wafer (20) in the accommodating cavity (111), the air outlet group comprising a plurality of air outlets (223) respectively connected to the air inlet pipe (210) and the accommodating cavity (111), and the plurality of air outlets (223) on the same air inlet plate (220) are arranged at intervals around the wafer (20) in the accommodating cavity (111); Each of the air inlet plates (220) is provided with an arc-shaped air outlet surface (224) on a side facing the wafer (20) in the accommodating cavity (111), and the arc-shaped air outlet surface (224) is concave inwardly along the radial direction of the furnace body (110); The air outlet group is arranged on the corresponding arc-shaped air outlet surface (224), and the multiple air outlets (223) of the same air outlet group are arranged at intervals along the arc length direction of the arc-shaped air outlet surface (224); There is a preset gap between the side of each air inlet plate (220) facing away from the wafer (20) and the side wall of the accommodating cavity (111).

2. The gas inlet mechanism for a chemical vapor deposition furnace according to claim 1, characterized in that: The accommodating cavity (111) extends along the axial direction of the furnace body (110), and a plurality of wafers (20) are arranged in the accommodating cavity (111) at intervals along the axial direction of the furnace body (110); A plurality of gas outlet groups are provided on a side of each gas inlet plate (220) facing the wafer (20) in the accommodating cavity (111), the gas outlet groups being spaced apart along the axial direction of the furnace body (110).

3. The gas inlet mechanism for a chemical vapor deposition furnace according to claim 1, characterized in that: Each of the air intake plates (220) has an air intake cavity respectively connected to the air intake pipe (210) and the air outlet (223).

4. The gas inlet mechanism for a chemical vapor deposition furnace according to claim 1, characterized in that: A plurality of the air intake plates (220) are provided, and the plurality of air intake plates (220) are arranged at intervals around the wafer (20) in the accommodating cavity (111).

5. The gas inlet mechanism for a chemical vapor deposition furnace according to claim 4, characterized in that: The air intake mechanism further comprises a diverter component (230) provided on the furnace body (110) and located outside the accommodating cavity (111), and the first ends (221) of the plurality of air intake plates (220) are connected to the air intake pipe (210) via the diverter component (230); The diversion component (230) has a diversion cavity connected to the air inlet pipe (210), and a plurality of diversion outlets connected to the diversion cavity, and each of the diversion outlets is connected to the plurality of air outlets (223) of the corresponding air inlet plate (220).

6. The gas inlet mechanism for a chemical vapor deposition furnace according to claim 5, characterized in that: The diversion component (230) comprises a diversion body (231) and a plurality of diversion tube groups connected to the diversion body (231) and corresponding one-to-one to the air inlet plates (220); Each of the shunt tube groups includes a plurality of shunt tubes (232); The first end (221) of each air inlet plate (220) is connected to the diversion body (231) via a plurality of diversion tubes (232) of a corresponding diversion tube group; The diversion cavity is formed in the diversion body (231), and the diversion outlet is formed at the connection between the diversion tube (232) and the diversion body (231).

7. A chemical vapor deposition furnace, characterized in that: The invention comprises an air intake mechanism for a chemical vapor deposition furnace as described in any one of claims 1 to 6.

8. The chemical vapor deposition furnace according to claim 7, characterized in that: The chemical vapor deposition furnace further includes a gas outlet mechanism, which includes: A plurality of waste gas outlets (241) are provided on the furnace body (110) and are located outside the accommodating chamber (111), and each of the waste gas outlets (241) is respectively connected to the accommodating chamber (111) and the external environment.

9. An air intake method, characterized in that: Air is introduced into the chemical vapor deposition furnace using the air intake mechanism according to any one of claims 1 to 6 or the chemical vapor deposition furnace according to any one of claims 7 to 8, wherein a plurality of air intake plates (220) are provided, and the plurality of air intake plates (220) are arranged at intervals around the wafer (20) in the accommodating cavity (111), and each of the air intake plates (220) has an air intake cavity respectively connected to the air intake pipe (210) and the air outlet (223), and the air intake method comprises: Simultaneously introducing reaction gas into the air inlet cavities of the plurality of air inlet plates (220); or The air intake method includes: Reaction gas is introduced into the air inlet cavities of the plurality of air inlet plates (220) in sequence.

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