An adaptive mechanism for measuring wafer thickness

Abstract

The present invention discloses an adaptive mechanism for measuring the thickness of a wafer, comprising a cylinder, a piston rod provided at the telescopic end of the cylinder, a sliding pin fixing plate provided at the output end of the piston rod, a sliding pin provided at the top of the sliding pin fixing plate, a positioning block mounting plate provided at the top of the sliding pin, a probe provided through the surface of the positioning block mounting plate, a positioning block provided at the top of the positioning block mounting plate, a ceramic disk provided at the top of the positioning block, a wafer provided at the bottom of the ceramic disk, a sliding hole provided on the surface of the sliding pin fixing plate, and the sliding hole and the sliding pin are slidably connected. This adaptive mechanism for measuring the thickness of a wafer effectively avoids the difference in plane position when the ceramic disk is transplanted into place, makes it easier for the measuring mechanism to adapt, reduces the error in measurement caused by the surface tolerance of multiple ceramic disks themselves, and effectively improves the accuracy of wafer measurement.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor material wafer processing, in particular to an adaptive mechanism for measuring wafer thickness. Background Art

[0002] Silicon is a semiconductor material and does not conduct electricity very well on its own. However, its resistivity can be precisely controlled by adding appropriate dopants. Before semiconductors can be manufactured, silicon must be converted into wafers, which begins with the growth of a silicon ingot. Single-crystal silicon is a solid formed by atoms arranged in a three-dimensional spatial pattern that runs throughout the material. Polycrystalline silicon is formed by many small single crystals with different crystal orientations and cannot be used to make semiconductor circuits. Polycrystalline silicon must be melted into single crystals before it can be processed into wafers used in semiconductor applications. Processing a silicon wafer to produce a single ingot takes from one week to one month, depending on many factors, including size, quality, and end-user requirements. Over 75% of single-crystal silicon wafers are grown using the Czochralski (CZ, also known as Czochralski) method.

[0003] Currently, wafer thickness measurement is required during the production and processing process. The existing wafer thickness measurement device has differences in plane position when the ceramic plate is moved into place, which makes it difficult for the measurement mechanism to adapt. The surface tolerance of multiple ceramic plates themselves affects the measurement and causes large errors, greatly affecting the accuracy of wafer thickness measurement. Summary of the Invention

[0004] The purpose of the present invention is to provide an adaptive mechanism for measuring chip thickness to solve the problem proposed in the above background technology that the existing chip thickness measuring device has different planar position when the ceramic plate is transplanted into place, which makes it difficult for the measuring mechanism to adapt, and the surface tolerance of multiple ceramic plates themselves affects the measurement and causes large errors, which greatly affects the accuracy of chip thickness measurement.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solution: an adaptive mechanism for measuring chip thickness, comprising a cylinder, a piston rod is provided at the telescopic end of the cylinder, a sliding pin fixing plate is provided at the output end of the piston rod, a sliding pin is provided at the top of the sliding pin fixing plate, a positioning block mounting plate is provided at the top of the sliding pin, a probe is provided through the surface of the positioning block mounting plate, a positioning block is provided at the top of the positioning block mounting plate, a ceramic disk is provided at the top of the positioning block, and a chip is provided at the bottom of the ceramic disk.

[0006] Preferably, a sliding hole is provided on the surface of the sliding pin fixing plate, and the sliding hole is penetrated and slidably connected with the sliding pin.

[0007] Preferably, a spring is sleeved on the outer side of each sliding pin, and the sliding pin is connected to the positioning block mounting plate through a threaded connection.

[0008] Preferably, the number of the sliding pins is three, and the number of the positioning blocks and the springs are both three.

[0009] Preferably, the wafer and the ceramic disk are connected and fixed to each other by wax adhesion, and the number of probes provided is two.

[0010] Compared with the prior art, the present invention has the following beneficial effects:

[0011] This adaptive mechanism for measuring the thickness of a wafer, during daily use, is pushed upward by the cylinder to move the entire measuring mechanism upward. When the positioning block contacts the ceramic disk, the three positioning blocks are compressed by the three springs to completely contact the ceramic disk, thereby forming a surface with the ceramic disk as a reference. At the same time, the probe will be compressed, and the thickness of the wafer is measured by the compression amount, which effectively avoids the difference in plane position when the ceramic disk is transplanted into place, makes it easier for the measuring mechanism to adapt, reduces the measurement error caused by the surface tolerance of multiple ceramic disks themselves, and effectively improves the accuracy of wafer measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is the front view of the present invention;

[0013] Figure 2 This is a schematic diagram of the connection structure of the sliding pin and the spring of the present invention;

[0014] Figure 3 It is a schematic diagram of the connection structure of the ceramic disk and the wafer of the present invention.

[0015] In the figure: 1. Ceramic disc; 2. Positioning block; 3. Positioning block mounting plate; 4. Sliding pin; 5. Cylinder; 6. Sliding pin fixing plate; 7. Probe; 8. Spring; 9. Wafer; 10. Piston rod; 11. Sliding hole. DETAILED DESCRIPTION

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0017] See also Figure 1-3The present invention provides a technical solution: an adaptive mechanism for measuring the thickness of a wafer, comprising a cylinder 5, a piston rod 10 provided at the telescopic end of the cylinder 5, a sliding pin fixing plate 6 provided at the output end of the piston rod 10, the entire measuring mechanism is pushed upward by the cylinder 5, a sliding pin 4 is provided on the top of the sliding pin fixing plate 6, a positioning block mounting plate 3 is provided on the top of the sliding pin 4, a probe 7 is provided on the surface of the positioning block mounting plate 3, the probe 7 will be compressed, and the thickness of the wafer 9 is measured by the compression amount, which effectively avoids the difference in plane position when the ceramic disk 1 is transplanted into place, making it easier to measure. It is easy for the measuring mechanism to adapt. A positioning block 2 is provided on the top of the positioning block mounting plate 3. When the positioning block 2 contacts the ceramic disk 1, the three positioning blocks 2 are compressed by the three springs 8 to make them completely contact the ceramic disk 1, thereby forming a surface with the ceramic disk 1 as the reference. A ceramic disk 1 is provided on the top of the positioning block 2, and a chip 9 is provided on the bottom of the ceramic disk 1. A sliding hole 11 is provided on the surface of the sliding pin fixing plate 6, and the sliding hole 11 is slidably connected with the sliding pin 4, so that the sliding pin 4 can move relative to the sliding pin fixing plate 6, thereby realizing real-time compression of the spring 8 and avoiding the problem of jamming.

[0018] The outer side of the sliding pin 4 is sleeved with a spring 8, and the sliding pin 4 is connected to the positioning block mounting plate 3 by a thread, which reduces the error of the surface tolerance of the multiple ceramic disks themselves on the measurement, and effectively improves the accuracy of the chip measurement. The number of sliding pins 4 is three, and the number of positioning blocks 2 and springs 8 are three, which can make the overall connection stability of the measurement process better and avoid tilting. The chip 9 and the ceramic disk 1 are connected and fixed to each other by wax, which can make the connection between the chip 9 and the ceramic disk 1 more stable and avoid shaking and offsetting the position during the measurement process. The number of probes 7 is two, and more accurate data can be obtained through analysis and processing through data comparison, and the measured position can be made more comprehensive and balanced.

[0019] Working principle: When it is necessary to measure the thickness of the chip, the ceramic disk 1 is first moved to a fixed position by the robotic arm, so that the chip 9 is stuck to the fixed position of the ceramic disk 1 through wax, and then the cylinder 5 is pushed upward to make the entire measuring mechanism move upward. When the positioning block 2 contacts the ceramic disk 1, the three springs 8 are compressed to make the three positioning blocks 2 completely contact the ceramic disk 1, thereby forming a surface with the ceramic disk 1 as the reference. At the same time, the probe 7 will be compressed, and the thickness of the chip 9 is measured by the compression amount, which effectively avoids the difference in plane position when the ceramic disk 1 is transplanted into place, makes it easier for the measuring mechanism to adapt, reduces the error of the surface tolerance of multiple ceramic disks themselves on the measurement, and effectively improves the accuracy of chip measurement.

[0020] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. An adaptive mechanism for wafer thickness measurement, comprising a cylinder (5), characterized in that: The telescopic end of the cylinder (5) is provided with a piston rod (10), the output end of the piston rod (10) is provided with a sliding pin fixing plate (6), the top of the sliding pin fixing plate (6) is provided with a sliding pin (4), the top of the sliding pin (4) is provided with a positioning block mounting plate (3), the surface of the positioning block mounting plate (3) is provided with a probe (7), the top of the positioning block mounting plate (3) is provided with a positioning block (2), the top of the positioning block (2) is provided with a ceramic disk (1), the bottom of the ceramic disk (1) is provided with a chip (9), the surface of the sliding pin fixing plate (6) is provided with a sliding hole (11), and the sliding hole (11) is slidably connected with the sliding pin (4), the outer side of the sliding pin (4) is provided with a spring (8), and the number of the positioning block (2) and the spring (8) is three.

2. The adaptive mechanism for wafer thickness measurement according to claim 1, characterized in that: The sliding pin (4) is connected to the positioning block mounting plate (3) via threads.

3. The adaptive mechanism for wafer thickness measurement according to claim 1, characterized in that: The number of the sliding pins (4) is three.

4. The adaptive mechanism for wafer thickness measurement according to claim 1, characterized in that: The wafer (9) and the ceramic disk (1) are connected and fixed to each other by wax adhesion, and the number of probes (7) provided is two.

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