IPD filter based on 5G communication N79 frequency band and manufacturing method thereof

Abstract

The application relates to the technical field of filters, in particular to an IPD filter based on a 5G communication N79 frequency band, which comprises a signal input end A, a signal output end B, capacitors C1, C2, C3, C4, C5, C6, C7, inductors L1, L2 and L3. The application also provides a manufacturing method for manufacturing the IPD filter; the application optimizes the device circuit structure, reduces the device composition and complex connection as much as possible on the basis of meeting the filtering performance, thereby reducing the defects of large size and large power consumption in the design concept; the Q value of the device composition is optimized on the basis of meeting the filtering performance, the power consumption and the in-band insertion loss are reduced; the device hierarchical structure is optimized, similar structures are designed to be the same as much as possible, the number of masks is reduced in production, and the parameter cost in the process design is simplified as much as possible; silicon-based integration is adopted to reduce the production cost of the IPD filter.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of filters, and particularly relates to an IPD filter based on a 5G communication N79 frequency band and a manufacturing method thereof. BACKGROUND

[0002] The fields of mobile phone communication, radar, Internet of Things and the like radio frequency channels are important driving forces for the development of IPD (Integrated Passive Device) filters. The design of the IPD filter is actually the splicing of passive devices, and the shielding or passing of signals is achieved by controlling the resonance points and the entire circuit. However, the performance requirements and the size of components should be fully considered in the process of designing the filter. Taking a common band-pass filter as an example, the resonance circuit of the IPD filter has both parallel and series connections. However, in actual design, considering the miniaturization of the entire device, the LC parallel resonance circuit is usually selected instead of the series connection. This is because the inductance of the LC parallel resonance circuit is much smaller than that of the series connection, and the inductance accounts for a large part of the area in the entire circuit. In the process of production, the process of the IPD is preferably short to achieve the function and reduce the total cost of the entire system, thereby increasing the profits of manufacturers. Considering these factors, the design and production of the IPD filter are usually quite different.

[0003] Taking a certain intermediate frequency filter as an example, the intermediate frequency band-pass filter is a typical product indispensable for mobile phones and Bluetooth, and the main features are the screening of the received frequency signals and the maximum retention of signal strength (low insertion loss) and high suppression of out-of-band signals. However, such a critical device often needs to occupy a large space, so that the "portability and lightness" has to be sacrificed, thereby reducing the comfort of the entire product. In addition, in terms of low power consumption and high performance, the Q value of the entire IPD filter device is low due to the limitations of process design and production capacity, and the signal distortion and frequent heating and aging phenomena are also more serious. In terms of the production and design cost of the IPD filter, due to some reasons such as insufficient design and production process design cognition of the designer, and loose production process control, the production cost is high.

[0004] Therefore, it can be seen from the above that, due to the development of current design and process, the disclosed IPD filter design still has deficiencies in miniaturization, high performance, low power consumption and low cost. In view of this, the application provides an IPD filter based on a 5G communication N79 frequency band and a manufacturing method thereof. SUMMARY

[0005] The application aims to provide an IPD filter based on a 5G communication N79 frequency band and a manufacturing method thereof, so as to solve the problems in the background art.

[0006] To achieve the above-mentioned purpose, the application provides the following technical scheme:

[0007] The application discloses an IPD filter based on a 5G communication N79 frequency band, which comprises a signal input end A, a signal output end B, capacitors C1, C2, C3, C4, C5, C6 and C7, and inductors L1, L2 and L3.

[0008] Preferably, the inductor L1 is made of aluminum, and the inductors L2 and L3 are made of copper.

[0009] The application further provides a manufacturing method for manufacturing the IPD filter based on the 5G communication N79 frequency band.

[0010] Step 1: chemical vapor deposition is performed on a silicon substrate to form an insulating medium layer, and a surface of the silicon substrate is subjected to medium planarization treatment.

[0011] Step 2: etching is performed on the insulating medium layer to form a metal wiring groove.

[0012] Step 3: magnetron sputtering is performed on the insulating medium layer to form a thin metal seed layer.

[0013] Step 4: electroplating is performed on the surface of the insulating medium layer and in the metal wiring groove to form a thick metal layer.

[0014] Step 5: chemical mechanical polishing is performed to remove all the metal covering layers of the insulating medium layer surface except the metal wiring groove, so that a metal wiring layer with a target thickness is obtained.

[0015] Step 6: steps 1-5 are repeated, so that the first and second metal wiring layers are used as the inductors L2 and L3 of the IPD filter, and the third metal wiring layer is used as the inductor L1 of the IPD filter.

[0016] Preferably, the first layer of metal wiring layer and the second layer of metal wiring layer are both made of copper to complete the magnetron sputtering and electroplating during the step 3 and step 4; the third layer of metal wiring layer is made of aluminum to complete the magnetron sputtering and electroplating during the step 3 and step 4.

[0017] Preferably, the insulating medium layer is one of silicon tetranitride and silicon dioxide.

[0018] Compared with the prior art, the IPD filter based on the 5G communication N79 frequency band and the manufacturing method thereof have the beneficial effects that: the device circuit structure is optimized, the device composition and complex connection are reduced as much as possible on the basis of meeting the filtering performance, so that the size and power consumption are reduced in the design concept; the Q value of the device composition is optimized on the basis of meeting the filtering performance, so that the power consumption and in-band insertion loss are reduced as much as possible; the device hierarchical structure is optimized, the similar structures are designed to be the same as much as possible, so that the number of masks is reduced in production, and the parameter cost in process design is simplified as much as possible; silicon-based integration is adopted to reduce the production cost of the IPD filter. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall structure of the present application;

[0020] Figure 2 It is the S parameter (scattering parameter) simulation result of the IPD filter in the present application. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the present application.

[0022] Embodiment 1

[0023] In view of the problems in the design of the IPD filter in the prior art, the present application solves the problems of the existing IPD filter, such as large size, complex line assembly, large in-band insertion loss, large power consumption, complex process, high cost, etc., based on the IPD filter based on the 5G communication N79 frequency band. Table 1 shows the various secondary indicators of the N79 frequency band IPD filter:

[0024]

[0025] Table 1: Various secondary indicators of the N79 frequency band IPD filter

[0026] Therefore, an IPD filter based on the 5G communication N79 frequency band is provided, as shown in Figure 1 As shown in the wiring circuit schematic diagram of the IPD filter of the present application, it comprises: a signal input end A, a signal output end B, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, a capacitor C7, an inductor L1, an inductor L2, and an inductor L3; the capacitor C2 and the capacitor C5 are connected in series between the signal input end A and the signal output end B; the common end of the positive electrode of the capacitor C2 and the positive electrode of the capacitor C2 is connected to the positive electrode of the capacitor C1 and the signal input end of the inductor L1, and the negative electrode of the capacitor C1 and the signal output end of the inductor L1 are connected in parallel and then grounded; the common end of the negative electrode of the capacitor C2 and the positive electrode of the capacitor C5 is connected to the positive electrode of the capacitor C3, the negative electrode of the capacitor C3 is connected to the positive electrode of the capacitor C4 and the signal input end of the inductor L2, and the negative electrode of the capacitor C4 and the signal output end of the inductor L2 are connected in parallel and then grounded; the common end of the negative electrode of the capacitor C5 and the signal output end B is connected to the positive electrode of the capacitor C6 and the signal input end of the inductor L3, and the negative electrode of the capacitor C6 and the signal output end of the inductor L3 are connected in parallel and then connected to the positive electrode of the capacitor C7, and the negative electrode of the capacitor C7 is grounded; the inductor L1 is made of aluminum, and the inductors L2 and L3 are made of copper.

[0027] Embodiment 2

[0028] A manufacturing method for manufacturing the IPD filter based on the 5G communication N79 frequency band described above, comprising the following steps:

[0029] Step 1: chemical vapor deposition is performed on a silicon substrate to form an insulating medium layer, and the surface of the silicon substrate is subjected to medium planarization treatment, and the insulating medium layer is one of silicon nitride and silicon dioxide;

[0030] Step 2: etching is performed on the insulating medium layer to form a metal wiring groove;

[0031] Step 3: a thin metal seed layer is formed on the insulating medium layer by magnetron sputtering;

[0032] Step 4: a thick metal layer is electroplated on the surface of the insulating medium layer and in the metal wiring groove;

[0033] Step 5: all the metal covering layers in the area of the insulating medium layer except the metal wiring groove are ground by chemical mechanical polishing to obtain a metal wiring layer with a target thickness;

[0034] Step 6: Repeat steps 1-5 to make the first and second layers of metal wiring layers as inductors L2, L3 of the IPD filter, and the third layer of metal wiring layer as inductor L1 of the IPD filter; and the upper and lower metal wiring layers are electrically connected by copper pillars; the first and second layers of metal wiring layers are made of copper during steps 3 and 4; and the third layer of metal wiring layer is made of aluminum during steps 3 and 4.

[0035] As shown in Figure 2 The S-parameter simulation results of the IPD filter are shown in the figure, and the silicon-based substrate is integrated while the sensitive waveband that needs to be shielded is designed as a notch point, and the in-band insertion loss is reduced to the maximum extent during the process of meeting these conditions, and the insertion loss at the center frequency is even reduced to 1 dB. The process design also specifically addresses the increase in inductance Q value to realize metal wiring groove design, and the inductance in each layer of metal wiring groove design is kept consistent to maximize cost savings and management during the etching process. Only aluminum and copper are used for main line lapping in the process production, which is more conducive to process control. Combined with design simulation and process optimization, a miniaturized, short-interconnected, high-performance, low-power-consumption, and low-cost IPD filter is developed. This combined optimization design is a great advantage compared to optimization from a single aspect.

[0036] From the above, it can be seen that the current publicly disclosed IPD filter production design has deficiencies in miniaturization, high performance, low power consumption, and low cost. For example, the design of a 5G communication N79 band IPD filter improves the size, complex line components, large in-band insertion loss, high power consumption, complex process, and high cost of IPD filters in design and process production. To meet the market requirements of optimal module configuration, low process cost, and excellent performance, optimize the device circuit structure to minimize device composition and complex connections while meeting filtering performance, thereby reducing the size and power consumption of the design concept. On the basis of meeting the filtering performance, optimize the Q value of the device composition to reduce the power consumption and in-band insertion loss of the circuit to the maximum extent. Optimize the device hierarchy structure to design similar structures as much as possible to reduce the number of masks in production and simplify the parameter cost in process design. Silicon-based integration reduces the production cost of the IPD filter.

[0037] The above shows and describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above-mentioned embodiments, and the above-mentioned embodiments and descriptions in the specification are only preferred examples of the present application and are not intended to limit the present application. Various changes and improvements can be made to the present application without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A method for manufacturing an IPD filter based on the 5G communication N79 frequency band, characterized in that: The IPD filter includes a signal input terminal A, a signal output terminal B, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, a capacitor C7, an inductor L1, an inductor L2, and an inductor L3; the capacitor C2 and the capacitor C5 are connected in series between the signal input terminal A and the signal output terminal B; the common end of the signal input terminal A and the positive electrode of the capacitor C2 is connected in parallel to the positive electrode of the capacitor C1 and the signal input terminal of the inductor L1, and the negative electrode of the capacitor C1 is connected in parallel to the signal output terminal of the inductor L1. The common end of the capacitor C2 negative electrode and the capacitor C5 positive electrode is connected to the capacitor C3 positive electrode, the capacitor C3 negative electrode is connected in parallel to the capacitor C4 positive electrode and the inductor L2 signal input end, and the capacitor C4 negative electrode and the inductor L2 signal output end are connected in parallel and then grounded; the common end of the capacitor C5 negative electrode and the signal output end B is connected in parallel to the capacitor C6 positive electrode and the inductor L3 signal input end, and the capacitor C6 negative electrode and the inductor L3 signal output end are connected in parallel and then connected to the capacitor C7 positive electrode, and the negative electrode of C7 is grounded. The method comprises: Step 1: forming an insulating dielectric layer by chemical vapor deposition on a silicon substrate, and performing dielectric planarization treatment on the surface of the silicon substrate; Step 2: Etching the insulating dielectric layer to form metal wiring grooves; Step 3: Perform magnetron sputtering on the insulating dielectric layer to form a thin metal seed layer; Step 4: Electroplating a thick metal layer on the surface of the insulating dielectric layer and in the metal wiring grooves; Step 5: Through chemical mechanical polishing, the metal covering layer on the surface of the insulating dielectric layer except for the metal wiring groove is completely removed to obtain a metal wiring layer of target thickness; Step 6: Repeat steps 1 to 5 to make the first and second metal wiring layers serve as the inductors L2 and L3 of the IPD filter, and the third metal wiring layer serve as the inductor L1 of the IPD filter; and the upper and lower metal wiring layers are electrically connected through copper pillars.

2. The method according to claim 1, wherein: The inductor L1 is wound with metal aluminum, and the inductors L2 and L3 are wound with metal copper.

3. The method according to claim 1, wherein: During steps 3 and 4, the first and second metal wiring layers are both formed by magnetron sputtering and electroplating using copper; during steps 3 and 4, the third metal wiring layer is formed by magnetron sputtering and electroplating using aluminum.

4. The method according to claim 1, wherein: The insulating dielectric layer is made of silicon nitride or silicon dioxide.

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