Method, device, storage medium and electronic device for optimizing photonic devices

Abstract

This specification discloses a method, device, storage medium and electronic device for optimizing photonic devices. First, the relative dielectric constant corresponding to each conductive unit in the area to be optimized is initialized. Secondly, an optical simulation is performed on the area to be optimized, and based on the simulation results corresponding to the area to be optimized, the updated relative dielectric constant corresponding to each conductive unit is obtained. Then, the conductive units to be optimized whose updated relative dielectric constants are within the set relative dielectric constant range are determined. If it is determined that the number of conductive units to be optimized is greater than the set number threshold, the original materials corresponding to the conductive units to be optimized are determined based on the updated relative dielectric constants corresponding to the conductive units to be optimized. Then, the target performance index of the area to be optimized after replacing the original material is determined. Finally, the photonic device is optimized with the maximization of the target performance index as the optimization goal. This method can reduce the amount of calculation in the optimization process of photonic devices and improve the optimization efficiency.

Description

Technical Field

[0001] This specification relates to the field of computer technology, and in particular to a method, device, storage medium, and electronic device for optimizing photonic devices. Background Art

[0002] In recent years, inverse design has been widely used in the field of photonic device design. Unlike traditional photonic device design methods based on physical intuition, inverse design divides the entire design space into a large number of optimizable conductive units. Using pre-defined performance indicators as the target, it uses brute-force algorithms (dynamic binary search (DBS) and heuristic algorithms) to obtain the optimal structural solution in the design space.

[0003] However, when optimizing photonic devices, the brute force algorithm has a large computational load and low optimization efficiency.

[0004] Therefore, how to reduce the amount of calculation in the optimization process of photonic devices and improve the optimization efficiency is an urgent problem to be solved. Summary of the Invention

[0005] This specification provides a method, apparatus, storage medium, and electronic device for optimizing photonic devices to partially solve the above-mentioned problems existing in the prior art.

[0006] This manual adopts the following technical solutions:

[0007] This specification provides a method for optimizing a photonic device, comprising:

[0008] Determining a region of the photonic device to be optimized, wherein the region to be optimized is composed of an arrangement of conductive units;

[0009] Initializing the relative dielectric constant corresponding to each conductive unit in the area to be optimized;

[0010] Performing optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and updating the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit;

[0011] Determine a conductive unit whose updated relative dielectric constant is within a set relative dielectric constant range as a conductive unit to be optimized;

[0012] If it is determined that the number of the conductive units to be optimized is greater than the set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative dielectric constants corresponding to the conductive units to be optimized;

[0013] For each conductive unit to be optimized, during the optical simulation process, simulate replacing the original material corresponding to the conductive unit to be optimized, and determine the performance index of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as the target performance index;

[0014] The photonic device is optimized with the maximization of the target performance index as the optimization goal.

[0015] Optionally, performing optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and updating the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit, specifically includes:

[0016] Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each conductive unit and a performance index corresponding to the area to be optimized, and performing accompanying simulation on the area to be optimized to obtain an accompanying light field corresponding to each conductive unit;

[0017] For each transmission unit, determining a gradient corresponding to the transmission unit according to a forward light field corresponding to the transmission unit and a companion light field corresponding to the transmission unit;

[0018] If it is determined that the performance index corresponding to the area to be optimized does not meet the set conditions, the relative dielectric constant corresponding to each conductive unit is updated according to the gradient corresponding to each conductive unit, and the updated relative dielectric constant corresponding to each conductive unit is determined.

[0019] Optionally, the conduction unit is composed of simulation grids;

[0020] Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each conductive unit, and performing accompanying simulation on the area to be optimized to obtain an accompanying light field corresponding to each conductive unit, specifically including:

[0021] Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each simulation grid, and performing adjoint simulation on the area to be optimized to obtain an adjoint light field corresponding to each simulation grid;

[0022] For each transmission unit, determining a gradient corresponding to the transmission unit according to the forward light field corresponding to the transmission unit and the accompanying light field corresponding to the transmission unit specifically includes:

[0023] For each simulation grid, determining a gradient corresponding to the simulation grid according to a forward light field corresponding to the simulation grid and a companion light field corresponding to the simulation grid;

[0024] For each conduction unit, the gradient corresponding to the conduction unit is determined according to the gradients corresponding to the simulation grids in the conduction unit.

[0025] Optionally, initializing the relative dielectric constant corresponding to each conductive unit in the area to be optimized specifically includes:

[0026] Initializing parameters corresponding to each conduction unit in the area to be optimized;

[0027] The relative dielectric constant corresponding to each conductive unit is determined according to the parameters corresponding to each conductive unit, the bias coefficient, and the relative dielectric constant corresponding to each material.

[0028] Optionally, determining the conductive unit whose updated relative permittivity is within a set relative permittivity range as the conductive unit to be optimized specifically includes:

[0029] Determining updated parameters corresponding to each conductive unit according to the updated relative dielectric constant corresponding to each conductive unit;

[0030] If it is determined that the performance index corresponding to the area to be optimized meets the set conditions, the bias coefficient is adjusted to obtain an adjusted bias coefficient;

[0031] Determining the adjusted relative permittivity corresponding to each conductive unit according to the updated parameters corresponding to each conductive unit, the adjusted bias coefficient, and the relative permittivity corresponding to each material;

[0032] The conductive units whose adjusted relative dielectric constants are within the set relative dielectric constant range are determined as conductive units to be optimized.

[0033] Optionally, determining the conductive unit whose adjusted relative dielectric constant is within a set relative dielectric constant range as the conductive unit to be optimized specifically includes:

[0034] Determine the area to be optimized after adjustment according to the adjusted relative dielectric constant corresponding to each conductive unit;

[0035] performing optical simulation on the adjusted area to be optimized to obtain a simulation result corresponding to the adjusted area to be optimized, and updating the adjusted relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the adjusted area to be optimized to obtain an updated adjusted relative dielectric constant corresponding to each conductive unit;

[0036] The conductive unit whose updated adjusted relative dielectric constant is within the set relative dielectric constant range is determined as the conductive unit to be optimized.

[0037] Optionally, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative permittivities corresponding to the conductive units to be optimized specifically includes:

[0038] Determining the number of the conduction units to be optimized;

[0039] determining a binarization degree corresponding to the area to be optimized according to the number of the conductive units to be optimized and the number of the conductive units;

[0040] If it is determined that the binarization degree corresponding to the area to be optimized is greater than the set binarization degree threshold, the original material corresponding to the conductive unit to be optimized is determined according to the updated relative dielectric constant corresponding to the conductive unit to be optimized.

[0041] Optionally, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative permittivities corresponding to the conductive units to be optimized specifically includes:

[0042] If it is determined that the number of the conductive units to be optimized is greater than the set number threshold, the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is greater than the set relative dielectric constant threshold is set as the chip material, and the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is not greater than the set relative dielectric constant threshold is set as the cladding material.

[0043] Optionally, before optimizing the photonic device with maximizing the target performance indicator as the optimization goal, the method further includes:

[0044] For each conductive unit to be optimized, determining a performance index of the region to be optimized before simulating the replacement of the original material corresponding to the conductive unit to be optimized, as an original performance index;

[0045] If the target performance index is greater than the original performance index, determining that the material corresponding to the conductive unit to be optimized is the replaced material;

[0046] If the target performance index is not greater than the original performance index, it is determined that the material corresponding to the conduction unit to be optimized is the original material.

[0047] Optionally, before optimizing the photonic device with maximizing the target performance indicator as the optimization goal, the method further includes:

[0048] Determine each to-be-optimized conduction unit whose material is the original material as the conduction unit to be replaced;

[0049] For each conduction unit to be replaced in each round of replacement, if it is determined that the target performance indicator does not meet the set conditions, a simulated replacement is performed on the material corresponding to the conduction unit to be replaced in this round of replacement, and the performance indicator of the area to be optimized after replacing the original material corresponding to the conduction unit to be replaced in this round of replacement is determined as the target performance indicator.

[0050] Optionally, the photonic device comprises an input waveguide and two output waveguides;

[0051] Obtain the region of the photonic device to be optimized, including:

[0052] Obtaining the design area of the photonic device;

[0053] The design area is divided according to one input waveguide and two output waveguides to obtain an area to be optimized.

[0054] This specification provides a device for optimizing a photonic device, comprising:

[0055] A first determining module is used to determine a region to be optimized of the photonic device, where the region to be optimized is composed of an arrangement of the conductive units;

[0056] An initialization module, configured to initialize the relative dielectric constant corresponding to each conductive unit in the area to be optimized;

[0057] an updating module, configured to perform optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and update the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit;

[0058] A second determining module is configured to determine a conductive unit whose updated relative permittivity is within a set relative permittivity range as a conductive unit to be optimized;

[0059] a third determining module, configured to determine, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, original materials corresponding to the conductive units to be optimized based on the updated relative permittivities corresponding to the conductive units to be optimized;

[0060] a replacement module configured to simulate, for each conductive unit to be optimized, replacing an original material corresponding to the conductive unit to be optimized during an optical simulation, and determine a performance index of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as a target performance index;

[0061] The optimization module is used to optimize the photonic device with maximizing the target performance index as the optimization goal.

[0062] This specification provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, the method for optimizing a photonic device is implemented.

[0063] This specification provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned method for optimizing photonic devices when executing the program.

[0064] At least one of the above technical solutions adopted in this specification can achieve the following beneficial effects:

[0065] In the method for optimizing a photonic device provided herein, first, a region of the photonic device to be optimized is determined, the region to be optimized being composed of an arrangement of conductive units, and the relative dielectric constant corresponding to each conductive unit in the region to be optimized is initialized. Next, an optical simulation is performed on the region to obtain simulation results corresponding to the region to be optimized. Based on the simulation results corresponding to the region to be optimized, the relative dielectric constant corresponding to each conductive unit is updated to obtain an updated relative dielectric constant corresponding to each conductive unit. Then, conductive units whose updated relative dielectric constants fall within a set relative dielectric constant range are identified as conductive units to be optimized. If the number of conductive units to be optimized is determined to be greater than a set threshold, the original material corresponding to the conductive unit to be optimized is determined based on the updated relative dielectric constants corresponding to the conductive units to be optimized. Next, for each conductive unit to be optimized, a simulated replacement of the original material corresponding to the conductive unit to be optimized is performed during the optical simulation process, and a performance indicator of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized is determined as the target performance indicator. Finally, the photonic device is optimized with maximizing the target performance indicator as the optimization goal.

[0066] It can be seen from the above-mentioned method for optimizing photonic devices that this method can update the relative dielectric constant corresponding to each conductive unit based on the simulation results corresponding to the area to be optimized, and determine the conductive units whose updated relative dielectric constants are within the set relative dielectric constant range as the conductive units to be optimized. If it is determined that the number of conductive units to be optimized is greater than the set number threshold, the original material corresponding to the conductive unit to be optimized is determined based on the updated relative dielectric constant corresponding to the conductive unit to be optimized. Then, for each conductive unit to be optimized, during the optical simulation process, the original material corresponding to the conductive unit to be optimized is simulated and replaced, and the performance index of the area to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized is determined as the target performance index. Finally, the photonic device is optimized with maximizing the target performance index as the optimization goal. This method can reduce the amount of calculation in the optimization process of photonic devices and improve the optimization efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The drawings described herein are used to provide a further understanding of this specification and constitute a part of this specification. The exemplary embodiments and descriptions of this specification are used to explain this specification and do not constitute an improper limitation of this specification. In the drawings:

[0068] Figure 1 A schematic flow chart of a method for optimizing a photonic device according to an embodiment of this specification;

[0069] Figure 2 A schematic diagram of the area to be optimized provided in the embodiments of this specification;

[0070] Figure 3 A schematic diagram of the optimization steps provided in the embodiments of this specification;

[0071] Figure 4 A schematic diagram of optimizing each conduction unit provided in the embodiments of this specification;

[0072] Figure 5 A schematic diagram of the structure of a device for optimizing photonic devices provided in an embodiment of this specification;

[0073] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this specification. DETAILED DESCRIPTION

[0074] To make the objectives, technical solutions, and advantages of this specification more clear, the following will clearly and completely describe the technical solutions of this specification in conjunction with the specific embodiments of this specification and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this specification.

[0075] The technical solutions provided by the embodiments of this specification are described in detail below with reference to the accompanying drawings.

[0076] Figure 1 The schematic flow chart of the method for optimizing a photonic device provided in the embodiments of this specification specifically includes the following steps:

[0077] S100: Determine a region of a photonic device to be optimized, where the region to be optimized is composed of an arrangement of conductive units.

[0078] In the embodiments of this specification, the execution entity of the method for optimizing photonic devices provided in this specification can be a server or an electronic device such as a desktop computer. For the sake of convenience of description, the method for optimizing photonic devices provided in this specification is described below using the server as the execution entity.

[0079] In the embodiment of this specification, the server can determine the region to be optimized of the photonic device, where the region to be optimized can be composed of an arrangement of conductive units, which can be represented by pixels during the optical simulation process.

[0080] Specifically, the photonic device may include one input waveguide and two output waveguides.

[0081] The server can obtain the design area of the photonic device. The design area is divided into M×N conductive units with sides of W×W. Each conductive unit can be used to represent a spatial unit with a variable relative permittivity. The relative permittivity mentioned here can refer to a physical parameter that characterizes the dielectric or polarization properties of a dielectric material. Its value is equal to the ratio of the capacitance of a capacitor of the same size made with the predicted material as the dielectric medium to that made with a vacuum as the dielectric medium.

[0082] Furthermore, the conduction unit is composed of various simulation grids, and the server may divide the conduction unit into multiple simulation grids, with the size of each simulation grid being (W / x)×(W / x).

[0083] Secondly, the server can divide the design area according to one input waveguide and two output waveguides to obtain the area to be optimized. Figure 2 shown.

[0084] Figure 2 This is a schematic diagram of the area to be optimized provided in the embodiments of this specification.

[0085] exist Figure 2 In the design, the size of the design area can be 3.168μm×3.168μm. The width of the input waveguide and the output waveguide are both 0.5μm. The gap distance between the two output waveguides is set to 1μm. The design area is divided into 24×24 conduction units with a side length of 132nm×132nm. Considering the symmetry of the device, the design area is divided into an upper half and a lower half, and the upper half and the lower half are mirror-symmetrical. The area to be optimized can be 12×24 conduction units in the upper half. In the subsequent process, if the optimization of the area to be optimized is completed, the server can copy the optimized area to the lower half of the design area.

[0086] Each conduction unit can be further divided into 6×6 simulation grids, each with a size of 22nm×22nm. Of course, the size of the design area, the size of the conduction unit, and the size of the simulation grid mentioned above can be set according to business needs. This specification does not specifically limit the size of the conduction unit and the size of the simulation grid.

[0087] S102: Initializing the relative dielectric constant corresponding to each conductive unit in the area to be optimized.

[0088] In the embodiments of this specification, the refractive index of a material can be derived from its relative permittivity and relative permeability. Since the relative permeability of non-magnetic materials is approximately 1, the refractive index of silicon-based materials can be derived from its relative permittivity. The server can initialize the relative permittivity corresponding to each conductive unit in the region to be optimized, thereby adjusting the refractive index corresponding to each conductive unit in the region to be optimized.

[0089] Furthermore, the server may initialize parameters corresponding to each conduction unit in the area to be optimized.

[0090] Secondly, the server can determine the relative dielectric constant corresponding to each conductive unit based on the parameters corresponding to each conductive unit, the bias coefficient, and the relative dielectric constant corresponding to each material. The materials mentioned here include cladding materials and chip materials. The cladding material can be silicon dioxide, and the chip material can be silicon. The specific formula is as follows:

[0091]

[0092]

[0093] In the above formula, β can refer to the bias coefficient. η can be always equal to 0.5. ρ can refer to the parameter corresponding to each conduction unit. The server can initialize the parameter corresponding to each conduction unit in the area to be optimized to a value between 0 and 1. ε min It can refer to the cladding material. If the cladding material is silicon dioxide, then ε min The relative dielectric constant at 1550nm is 2.085. max It can refer to the chip material. If the chip material is silicon, then ε max The relative dielectric constant at 1550nm is 12.085. It can be seen that the server can adjust the bias coefficient so that the relative dielectric constant corresponding to each conductive unit is closer to ε min or ε max The closer the offset is, the larger β is, and the larger the offset is.

[0094] It should be noted that the bias coefficient β may be initially 1. When the bias coefficient is subsequently adjusted, the bias coefficient β may be increased to adjust the relative dielectric constant corresponding to each conductive unit.

[0095] S104: performing optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and updating the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit.

[0096] In an embodiment of the present specification, the server can perform optical simulation on the area to be optimized to obtain simulation results corresponding to the area to be optimized, and update the relative dielectric constant corresponding to each conductive unit based on the simulation results corresponding to the area to be optimized to obtain updated relative dielectric constant corresponding to each conductive unit.

[0097] In practical applications, inverse design methods divide the entire design space into a large number of optimizable conduction units. Targeting pre-defined performance metrics, brute-force algorithms (such as dynamic binary search (DBS) and heuristic algorithms) are used to obtain the optimal structural solution within the design space. However, brute-force algorithms are computationally intensive and have low optimization efficiency. Instead, the server can use forward and adjoint simulations to quickly determine the gradients corresponding to each conduction unit, enabling more targeted parameter updates, reducing computational complexity and improving optimization efficiency.

[0098] In the embodiment of this specification, the server can perform forward simulation on the area to be optimized to obtain the forward light field corresponding to each conductive unit and the performance index corresponding to the area to be optimized, and perform accompanying simulation on the area to be optimized to obtain the accompanying light field corresponding to each conductive unit.

[0099] Secondly, for each transmission unit, the server can determine the gradient corresponding to the transmission unit based on the forward light field corresponding to the transmission unit and the accompanying light field corresponding to the transmission unit. The specific formula is as follows:

[0100] g=α·Re(E·E A )

[0101] In the above formula, g can be used to represent the gradient corresponding to the conductive unit. α can be used to represent the coefficient. Re() can be used to represent the real part operation. E can be used to represent the forward light field corresponding to each conductive unit. A It can be used to represent the accompanying light field corresponding to each transmission unit.

[0102] Then, if it is determined that the performance index corresponding to the area to be optimized does not meet the set conditions, the relative dielectric constant corresponding to each conductive unit is updated according to the gradient corresponding to each conductive unit, and the updated relative dielectric constant corresponding to each conductive unit is determined.

[0103] Furthermore, the transmission unit is composed of various simulation grids. The server can perform forward simulation on the area to be optimized to obtain the forward optical field corresponding to each simulation grid, and also perform companion simulation on the area to be optimized to obtain the companion optical field corresponding to each simulation grid. During the optical simulation process, different waveguide modes exist. For example, TE0, TM0, TE1, TM1, etc., are named according to their electric field distribution characteristics. When a waveguide supports two or more waveguide modes, it is called a multimode waveguide.

[0104] Next, for each simulation grid, the server can determine the gradient corresponding to that grid based on the forward light field and the accompanying light field corresponding to that grid. For example, if the area to be optimized is a multimode waveguide with waveguide modes TE0 and TM0, the server can add the gradient corresponding to TE0 and TM0 to obtain the gradient corresponding to that grid.

[0105] Finally, for each conduction unit, the server may determine the gradient corresponding to the conduction unit according to the gradients corresponding to the simulation grids in the conduction unit.

[0106] For example, for each conduction unit, the server may calculate an average of the gradients corresponding to the simulation grids in the conduction unit, and use the determined average as the gradient corresponding to the conduction unit.

[0107] It should be noted that the server can update the relative dielectric constant of each conductive unit through various methods, such as the local minimization algorithm (Limited-memory Broyden–Fletcher–Goldfarb–Shanno, L-BFGS-B), the gradient descent method, etc.

[0108] S106: Determine the conductive units whose updated relative permittivity is within the set relative permittivity range as conductive units to be optimized.

[0109] In the embodiment of this specification, the server can determine the conductive unit whose relative dielectric constant after update is within the set relative dielectric constant range as the conductive unit to be optimized. The specific formula is as follows:

[0110] ε min +(ε max -ε min )·η1<ε r <ε min +(ε max -ε min )·η2

[0111] In the above formula, η1 and η2 are artificially set parameters, η1 can be 10%, and η2 can be 90%. r It can be used to represent the updated relative dielectric constant or the subsequently mentioned adjusted relative dielectric constant or the updated adjusted relative dielectric constant.

[0112] Specifically, the server may determine the updated parameters corresponding to each conductive unit according to the updated relative dielectric constant corresponding to each conductive unit.

[0113] If it is determined that the performance indicator corresponding to the area to be optimized meets the set conditions, the bias coefficient is adjusted to obtain an adjusted bias coefficient. The set conditions mentioned here may refer to the performance indicator corresponding to the area to be optimized converging, that is, the change range of the performance indicator corresponding to the area to be optimized after adjustment is within the set change range.

[0114] Then, the server may determine the adjusted relative dielectric constant corresponding to each conductive unit according to the updated parameters corresponding to each conductive unit, the adjusted bias coefficient, and the relative dielectric constant corresponding to each material.

[0115] Next, the server may determine a conductive unit whose adjusted relative dielectric constant is within the set relative dielectric constant range as a conductive unit to be optimized.

[0116] Furthermore, the server may determine the adjusted area to be optimized according to the adjusted relative dielectric constant corresponding to each conductive unit.

[0117] Secondly, the server can perform optical simulation on the adjusted area to be optimized to obtain the simulation results corresponding to the adjusted area to be optimized, and update the adjusted relative dielectric constant corresponding to each conduction unit based on the simulation results corresponding to the adjusted area to be optimized to obtain the updated adjusted relative dielectric constant corresponding to each conduction unit.

[0118] Finally, the server may determine the conductive units whose updated adjusted relative permittivity is within the set relative permittivity range as the conductive units to be optimized. If it is determined that the performance indicator corresponding to the area to be optimized does not meet the set conditions, the bias coefficients are further adjusted until the performance indicator corresponding to the area to be optimized meets the set conditions.

[0119] S108: If it is determined that the number of the conductive units to be optimized is greater than the set number threshold, determine the original materials corresponding to the conductive units to be optimized according to the updated relative dielectric constants corresponding to the conductive units to be optimized.

[0120] In the embodiment of this specification, if it is determined that the number of conductive units to be optimized is greater than a set number threshold, the original material corresponding to the conductive units to be optimized is determined according to the updated relative dielectric constants corresponding to the conductive units to be optimized.

[0121] Specifically, the server may determine the number of conduction units to be optimized.

[0122] Then, the server can determine the binarization degree corresponding to the area to be optimized based on the number of conductive units to be optimized and the number of conductive units. The specific formula is as follows:

[0123]

[0124] In the above formula, R b It can be used to indicate the proportion of conductive units whose relative dielectric constant is close to the extreme value in the area to be optimized. g It can be used to indicate the number of conduction units to be optimized. M·N can be used to indicate the number of conduction units.

[0125] If it is determined that the binarization degree corresponding to the area to be optimized is greater than the set binarization degree threshold, the server may determine the original material corresponding to the conductive unit to be optimized based on the updated relative dielectric constant corresponding to the conductive unit to be optimized.

[0126] If it is determined that the number of conductive units to be optimized is greater than the set number threshold, the original material corresponding to the conductive units to be optimized whose updated relative permittivity is greater than the set relative permittivity threshold is set as the chip material, and the original material corresponding to the conductive units to be optimized whose updated relative permittivity is not greater than the set relative permittivity threshold is set as the cladding material. The set relative permittivity threshold mentioned here may refer to (ε max +ε min ) / 2.

[0127] S110: For each conductive unit to be optimized, simulate replacing the original material corresponding to the conductive unit to be optimized during the optical simulation process, and determine the performance index of the area to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as the target performance index.

[0128] In an embodiment of the present specification, for each conductive unit to be optimized, the server can simulate the replacement of the original material corresponding to the conductive unit to be optimized during the optical simulation process, and determine the performance index of the area to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as the target performance index.

[0129] Specifically, for each conductive unit to be optimized, the server may determine the performance index of the area to be optimized before simulating the replacement of the original material corresponding to the conductive unit to be optimized, as the original performance index.

[0130] If the target performance index is greater than the original performance index, the material corresponding to the conductive unit to be optimized is determined to be the replaced material. If the target performance index is not greater than the original performance index, the material corresponding to the conductive unit to be optimized is determined to be the original material. For example, if there are 20 conductive units to be optimized, the materials of each of the 20 conductive units to be optimized are replaced sequentially, and the target performance index after each replacement is determined. If the target performance index improves, the replaced material of the conductive unit to be optimized is retained; otherwise, the replaced material of the conductive unit to be optimized is not retained, and the original material of the conductive unit to be optimized is maintained.

[0131] Furthermore, the server may determine each to-be-optimized conducting unit whose material is the original material as the to-be-replaced conducting unit.

[0132] For each conduction unit to be replaced in each round of replacement, if it is determined that the target performance index does not meet the set conditions, a simulated replacement is performed on the material corresponding to the conduction unit to be replaced in this round of replacement, and the performance index of the area to be optimized after replacing the original material corresponding to the conduction unit to be replaced in this round of replacement is determined as the target performance index.

[0133] S108: Optimizing the photonic device with maximizing the target performance index as the optimization goal.

[0134] In the embodiments of this specification, the server can optimize the photonic device with the goal of maximizing the target performance index. Figure 3 shown.

[0135] Figure 3 A schematic diagram of the optimization steps provided in the embodiments of this specification.

[0136] exist Figure 3 In the process, the server can initialize the parameters corresponding to each conduction unit in the area to be optimized.

[0137] Secondly, the server may determine the relative dielectric constant corresponding to each conductive unit according to the parameters corresponding to each conductive unit, the bias coefficient having a value of 1, and the relative dielectric constant corresponding to each material.

[0138] If it is determined that the performance index corresponding to the area to be optimized meets the set conditions, the bias coefficient is adjusted to obtain an adjusted bias coefficient.

[0139] Then, the server can determine the adjusted relative dielectric constant corresponding to each conductive unit based on the updated parameters corresponding to each conductive unit, the adjusted bias coefficient, and the relative dielectric constant corresponding to each material.

[0140] Then, the server can determine the adjusted area to be optimized according to the adjusted relative dielectric constant corresponding to each conductive unit, and perform optical simulation on the adjusted area to be optimized to obtain the simulation result corresponding to the adjusted area to be optimized, and update the adjusted relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the adjusted area to be optimized to obtain the updated adjusted relative dielectric constant corresponding to each conductive unit.

[0141] If it is determined that the performance index corresponding to the area to be optimized meets the set conditions and it is determined that the number of conductive units to be optimized is greater than the set number threshold, the server can determine the original material corresponding to the conductive unit to be optimized based on the updated relative dielectric constant corresponding to the conductive unit to be optimized.

[0142] Then, for each conductive unit to be optimized, the server can simulate the replacement of the original material corresponding to the conductive unit to be optimized during the optical simulation process, and determine the performance index of the area to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as the target performance index.

[0143] Finally, the server may determine each to-be-optimized conduction unit whose material is the original material as the to-be-replaced conduction unit.

[0144] For each conduction unit to be replaced in each round of replacement, if it is determined that the target performance index does not meet the set conditions, a simulated replacement is performed on the material corresponding to the conduction unit to be replaced in this round of replacement, and the performance index of the area to be optimized after replacing the original material corresponding to the conduction unit to be replaced in this round of replacement is determined as the target performance index.

[0145] If it is determined that the target performance index corresponding to the area to be optimized meets the set conditions, the optimization of the photonic device is completed.

[0146] In the embodiment of this specification, the change of the relative dielectric constant corresponding to each conductive unit in the above optimization step is as follows: Figure 4 shown.

[0147] Figure 4 This is a schematic diagram of optimizing each conduction unit provided in the embodiments of this specification.

[0148] exist Figure 4 First, if the bias coefficient is 1, the server determines the relative dielectric constant corresponding to each conductive element in the area to be optimized, expressed as the grayscale corresponding to each square. Black squares represent the relative dielectric constant corresponding to the chip material, and white squares represent the relative dielectric constant corresponding to the cladding material. The relative dielectric constants of grayscale squares of different grayscales fall between the relative dielectric constants of the chip material and the relative dielectric constants of the cladding material. The higher the grayscale, the closer the relative dielectric constant of the grayscale square is to the relative dielectric constant of the chip material. The lower the grayscale, the closer the relative dielectric constant of the grayscale square is to the relative dielectric constant of the cladding material. This is shown in Figure A.

[0149] Next, the server adjusts the bias coefficient. When the bias coefficient is greater than 1, the server determines the relative dielectric constant corresponding to each conductive unit in the area to be optimized. It can be seen that by adjusting the bias coefficient, the server can shift the relative dielectric constant corresponding to each conductive unit closer to the relative dielectric constant corresponding to the chip material or the relative dielectric constant corresponding to the cladding material. The larger the bias coefficient, the greater the shift, as shown in Figure B.

[0150] Then, if it is determined that the number of conductive units to be optimized is greater than a set threshold, the original material corresponding to the conductive units to be optimized whose updated relative permittivity is greater than the set relative permittivity threshold is set as the chip material, and the original material corresponding to the conductive units to be optimized whose updated relative permittivity is not greater than the set relative permittivity threshold is set as the cladding material, as shown in Figure C.

[0151] Finally, for each conductive unit to be optimized, the server can determine the performance index of the optimized area before the simulated replacement of the original material corresponding to the conductive unit to be optimized, and use this as the original performance index. If the target performance index is greater than the original performance index, the material corresponding to the conductive unit to be optimized is determined to be the replaced material. If the target performance index is not greater than the original performance index, the material corresponding to the conductive unit to be optimized is determined to be the original material. As can be seen in Figure D, compared to Figure C, the original materials corresponding to some squares have been replaced, changing from white squares to black squares. This is shown in Figure D.

[0152] As can be seen from the above process, this method can update the relative dielectric constant corresponding to each conductive unit based on the simulation results corresponding to the area to be optimized, and determine the conductive units whose updated relative dielectric constants are within the set relative dielectric constant range as the conductive units to be optimized. If it is determined that the number of conductive units to be optimized is greater than the set number threshold, the original material corresponding to the conductive unit to be optimized is determined based on the updated relative dielectric constant corresponding to the conductive unit to be optimized. Then, for each conductive unit to be optimized, during the optical simulation process, the original material corresponding to the conductive unit to be optimized is simulated and replaced, and the performance index of the area to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized is determined as the target performance index. Finally, the photonic device is optimized with maximizing the target performance index as the optimization goal. This method can reduce the amount of calculation in the optimization process of photonic devices and improve the optimization efficiency.

[0153] The above is a method for optimizing photonic devices provided in one or more embodiments of this specification. Based on the same idea, this specification also provides a corresponding device for optimizing photonic devices, such as Figure 5 shown.

[0154] Figure 5 The schematic diagram of the structure of the device for optimizing photonic devices provided in the embodiments of this specification specifically includes:

[0155] A first determining module 500 is used to determine a region of the photonic device to be optimized, where the region to be optimized is composed of an arrangement of conductive units;

[0156] Initialization module 502, used to initialize the relative dielectric constant corresponding to each conductive unit in the area to be optimized;

[0157] An updating module 504 is configured to perform optical simulation on the region to be optimized to obtain a simulation result corresponding to the region to be optimized, and update the relative dielectric constant corresponding to each conductive unit based on the simulation result corresponding to the region to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit;

[0158] A second determining module 506 is configured to determine a conductive unit whose updated relative permittivity is within a set relative permittivity range as a conductive unit to be optimized;

[0159] A third determining module 508 is configured to determine, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, the original material corresponding to the conductive units to be optimized based on the updated relative permittivity corresponding to the conductive units to be optimized;

[0160] a replacement module 510 configured to simulate, for each conductive unit to be optimized, replacing the original material corresponding to the conductive unit to be optimized during the optical simulation process, and determine a performance index of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as a target performance index;

[0161] The optimization module 512 is configured to optimize the photonic device by taking maximizing the target performance index as the optimization goal.

[0162] Optionally, the updating module 504 is specifically configured to perform a forward simulation on the area to be optimized to obtain a forward light field corresponding to each conductive unit and a performance index corresponding to the area to be optimized, and perform a companion simulation on the area to be optimized to obtain a companion light field corresponding to each conductive unit; for each conductive unit, determine a gradient corresponding to the conductive unit based on the forward light field corresponding to the conductive unit and the companion light field corresponding to the conductive unit; if it is determined that the performance index corresponding to the area to be optimized does not meet a set condition, update the relative dielectric constant corresponding to each conductive unit based on the gradient corresponding to each conductive unit, and determine an updated relative dielectric constant corresponding to each conductive unit.

[0163] Optionally, the conduction unit is composed of simulation grids;

[0164] The updating module 504 is specifically configured to perform forward simulation on the area to be optimized to obtain a forward light field corresponding to each simulation grid, and perform companion simulation on the area to be optimized to obtain a companion light field corresponding to each simulation grid. For each conduction unit, the updating module 504 determines a gradient corresponding to the conduction unit based on the forward light field corresponding to the conduction unit and the companion light field corresponding to the conduction unit. Specifically, the updating module 504 determines a gradient corresponding to each simulation grid based on the forward light field corresponding to the simulation grid and the companion light field corresponding to the simulation grid, and determines a gradient corresponding to each conduction unit based on the gradients corresponding to each simulation grid in the conduction unit.

[0165] Optionally, the initialization module 502 is specifically configured to initialize parameters corresponding to each conductive unit in the area to be optimized, and determine the relative dielectric constant corresponding to each conductive unit according to the parameters corresponding to each conductive unit, the bias coefficient, and the relative dielectric constant corresponding to each material.

[0166] Optionally, the second determination module 506 is specifically used to determine the updated parameters corresponding to each conduction unit based on the updated relative dielectric constant corresponding to each conduction unit; if it is determined that the performance index corresponding to the area to be optimized meets the set conditions, the bias coefficient is adjusted to obtain the adjusted bias coefficient; based on the updated parameters corresponding to each conduction unit, the adjusted bias coefficient and the relative dielectric constant corresponding to each material, the adjusted relative dielectric constant corresponding to each conduction unit is determined; and the conduction unit whose adjusted relative dielectric constant is within the set relative dielectric constant range is determined as the conduction unit to be optimized.

[0167] Optionally, the second determination module 506 is specifically used to determine the adjusted area to be optimized according to the adjusted relative dielectric constant corresponding to each conductive unit, perform optical simulation on the adjusted area to be optimized, obtain the simulation result corresponding to the adjusted area to be optimized, and update the adjusted relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the adjusted area to be optimized, obtain the updated adjusted relative dielectric constant corresponding to each conductive unit, and determine the conductive unit whose updated adjusted relative dielectric constant is within the set relative dielectric constant range as the conductive unit to be optimized.

[0168] Optionally, the third determination module 508 is specifically used to determine the number of the conductive units to be optimized, determine the binarization degree corresponding to the area to be optimized based on the number of the conductive units to be optimized and the number of the conductive units, and if it is determined that the binarization degree corresponding to the area to be optimized is greater than a set binarization degree threshold, determine the original material corresponding to the conductive unit to be optimized based on the updated relative dielectric constant corresponding to the conductive unit to be optimized.

[0169] Optionally, the third determination module 508 is specifically used to, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, set the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is greater than the set relative dielectric constant threshold as the chip material, and set the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is not greater than the set relative dielectric constant threshold as the cladding material.

[0170] Optionally, the replacement module 510 is specifically configured to, for each conductive unit to be optimized, determine a performance index of the area to be optimized before simulating the replacement of the original material corresponding to the conductive unit to be optimized, as the original performance index; if the target performance index is greater than the original performance index, determine that the material corresponding to the conductive unit to be optimized is the replaced material; if the target performance index is not greater than the original performance index, determine that the material corresponding to the conductive unit to be optimized is the original material.

[0171] Optionally, the replacement module 510 is specifically used to determine each to-be-optimized conductive unit whose material is the original material as the to-be-replaced conductive unit. For each to-be-replaced conductive unit in each round of replacement, if it is determined that the target performance indicator does not meet the set conditions, a simulated replacement is performed on the material corresponding to the to-be-replaced conductive unit in the round of replacement, and a performance indicator of the to-be-optimized area after replacing the original material corresponding to the to-be-replaced conductive unit in the round of replacement is determined as the target performance indicator.

[0172] Optionally, the photonic device comprises an input waveguide and two output waveguides;

[0173] The first determining module 500 is specifically configured to obtain a design region of the photonic device, and divide the design region according to one input waveguide and two output waveguides to obtain a region to be optimized.

[0174] This specification also provides a computer-readable storage medium, which stores a computer program that can be used to execute the above Figure 1 A method for optimizing photonic devices is provided.

[0175] This manual also provides Figure 6 The structural diagram of the electronic device shown in FIG. Figure 6 As mentioned above, at the hardware level, the electronic device includes a processor, an internal bus, a network interface, a memory and a non-volatile memory, and may also include other hardware required for the business. The processor reads the corresponding computer program from the non-volatile memory into the memory and then runs it to achieve the above Figure 1 A method for optimizing photonic devices is provided.

[0176] Of course, in addition to software implementation, this specification does not exclude other implementation methods, such as logic devices or a combination of software and hardware, etc. That is to say, the execution subject of the following processing flow is not limited to each logic unit, but can also be hardware or logic devices.

[0177] In the 1990s, technological improvements could be clearly distinguished as either hardware improvements (for example, improvements to circuit structures like diodes, transistors, and switches) or software improvements (improvements to process flows). However, with the advancement of technology, many process flow improvements today can now be considered direct improvements to hardware circuit structures. Designers almost always create the corresponding hardware circuit structure by programming the improved process flow into the hardware circuit. Therefore, it cannot be said that a process flow improvement cannot be implemented using hardware modules. For example, a programmable logic device (PLD), such as a field programmable gate array (FPGA), is an integrated circuit whose logical function is determined by user programming. Designers can "integrate" a digital system on a PLD through their own programming, without having to hire a chip manufacturer to design and manufacture a dedicated integrated circuit chip. Moreover, nowadays, instead of manually fabricating integrated circuit chips, this programming is mostly done using "logic compiler" software. This is similar to the software compiler used when developing programs. Before compilation, the original code must also be written in a specific programming language, called a hardware description language (HDL). There is not just one HDL, but many, such as ABEL (Advanced Boolean Expression Language), AHDL (Altera Hardware Description Language), Confluence, CUPL (Cornell University Programming Language), HDCal, JHDL (Java Hardware Description Language), Lava, Lola, MyHDL, PALASM, RHDL (Ruby Hardware Description Language), etc. The most commonly used ones are VHDL (Very-High-Speed Integrated Circuit Hardware Description Language) and Verilog. Those skilled in the art will also understand that by simply programming the method flow in one of these hardware description languages and then programming it into an integrated circuit, a hardware circuit that implements the logic method flow can be easily obtained.

[0178] The controller can be implemented in any suitable manner. For example, the controller can take the form of a microprocessor or processor and a computer-readable medium storing computer-readable program code (e.g., software or firmware) executable by the (micro)processor, logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers. Examples of controllers include, but are not limited to, the following microcontrollers: ARC 625D, Atmel AT91SAM, Microchip PIC18F26K20, and Silicone Labs C8051F320. The memory controller can also be implemented as part of the control logic of the memory. Those skilled in the art will also know that in addition to implementing the controller in a purely computer-readable program code format, the controller can be implemented in the form of logic gates, switches, application-specific integrated circuits, programmable logic controllers, and embedded microcontrollers by logically programming the method steps. Therefore, such a controller can be considered a hardware component, and the devices included therein for implementing various functions can also be considered as structures within the hardware component. Or even, the devices for implementing various functions can be considered as both software modules that implement the method and structures within the hardware component.

[0179] The systems, devices, modules, or units described in the above embodiments may be implemented by computer chips or entities, or by products having certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smartphone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0180] For the convenience of description, the above devices are described as being divided into various units according to their functions. Of course, when implementing this specification, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0181] Those skilled in the art will appreciate that the embodiments of this specification may be provided as methods, systems, or computer program products. Therefore, this specification may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Furthermore, this specification may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0182] This specification is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of this specification. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0183] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0184] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0185] In a typical configuration, a computing device includes one or more processors (CPUs), input / output interfaces, network interfaces, and memory.

[0186] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0187] Computer-readable media includes permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. The information can be computer-readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer-readable media does not include transitory computer-readable media (transitory media), such as modulated data signals and carrier waves.

[0188] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0189] Those skilled in the art will appreciate that the embodiments of this specification may be provided as methods, systems, or computer program products. Thus, this specification may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, this specification may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0190] This specification may be described in the general context of computer-executable instructions, such as program modules, executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, and the like that perform specific tasks or implement specific abstract data types. This specification may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media, including storage devices.

[0191] The various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the system embodiments are generally similar to the method embodiments, so the description is relatively simple. For relevant parts, refer to the description of the method embodiments.

[0192] The foregoing is merely an example of the present invention and is not intended to limit the present invention. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. A method for optimizing a photonic device, characterized in that: include: Determining a region of the photonic device to be optimized, wherein the region to be optimized is composed of an arrangement of conductive units; Initializing the relative dielectric constant corresponding to each conductive unit in the area to be optimized; Performing optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and updating the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit; Determine a conductive unit whose updated relative dielectric constant is within a set relative dielectric constant range as a conductive unit to be optimized; If it is determined that the number of the conductive units to be optimized is greater than the set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative dielectric constants corresponding to the conductive units to be optimized; For each conductive unit to be optimized, during the optical simulation process, simulate replacing the original material corresponding to the conductive unit to be optimized, and determine the performance index of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as the target performance index; The photonic device is optimized with the maximization of the target performance index as the optimization goal.

2. The method according to claim 1, wherein Performing optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and updating the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit, specifically including: Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each conductive unit and a performance index corresponding to the area to be optimized, and performing accompanying simulation on the area to be optimized to obtain an accompanying light field corresponding to each conductive unit; For each transmission unit, determining a gradient corresponding to the transmission unit according to a forward light field corresponding to the transmission unit and a companion light field corresponding to the transmission unit; If it is determined that the performance index corresponding to the area to be optimized does not meet the set conditions, the relative dielectric constant corresponding to each conductive unit is updated according to the gradient corresponding to each conductive unit, and the updated relative dielectric constant corresponding to each conductive unit is determined.

3. The method according to claim 2, wherein The conduction unit is composed of simulation grids; Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each conductive unit, and performing accompanying simulation on the area to be optimized to obtain an accompanying light field corresponding to each conductive unit, specifically including: Performing forward simulation on the area to be optimized to obtain a forward light field corresponding to each simulation grid, and performing adjoint simulation on the area to be optimized to obtain an adjoint light field corresponding to each simulation grid; For each transmission unit, determining a gradient corresponding to the transmission unit according to the forward light field corresponding to the transmission unit and the accompanying light field corresponding to the transmission unit specifically includes: For each simulation grid, determining a gradient corresponding to the simulation grid according to a forward light field corresponding to the simulation grid and a companion light field corresponding to the simulation grid; For each conduction unit, the gradient corresponding to the conduction unit is determined according to the gradients corresponding to the simulation grids in the conduction unit.

4. The method according to claim 1, wherein Initializing the relative dielectric constant corresponding to each conductive unit in the area to be optimized specifically includes: Initializing parameters corresponding to each conduction unit in the area to be optimized; The relative dielectric constant corresponding to each conductive unit is determined according to the parameters corresponding to each conductive unit, the bias coefficient, and the relative dielectric constant corresponding to each material.

5. The method according to claim 4, wherein Determining the conductive unit whose updated relative dielectric constant is within the set relative dielectric constant range as the conductive unit to be optimized specifically includes: Determining updated parameters corresponding to each conductive unit according to the updated relative dielectric constant corresponding to each conductive unit; If it is determined that the performance index corresponding to the area to be optimized meets the set conditions, the bias coefficient is adjusted to obtain an adjusted bias coefficient; Determining the adjusted relative permittivity corresponding to each conductive unit according to the updated parameters corresponding to each conductive unit, the adjusted bias coefficient, and the relative permittivity corresponding to each material; The conductive units whose adjusted relative dielectric constants are within the set relative dielectric constant range are determined as conductive units to be optimized.

6. The method according to claim 5, wherein Determining the conductive unit whose adjusted relative dielectric constant is within the set relative dielectric constant range as the conductive unit to be optimized specifically includes: Determine the area to be optimized after adjustment according to the adjusted relative dielectric constant corresponding to each conductive unit; performing optical simulation on the adjusted area to be optimized to obtain a simulation result corresponding to the adjusted area to be optimized, and updating the adjusted relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the adjusted area to be optimized to obtain an updated adjusted relative dielectric constant corresponding to each conductive unit; The conductive unit whose updated adjusted relative dielectric constant is within the set relative dielectric constant range is determined as the conductive unit to be optimized.

7. The method according to claim 1, wherein If it is determined that the number of the conductive units to be optimized is greater than a set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative permittivities corresponding to the conductive units to be optimized specifically includes: Determining the number of the conduction units to be optimized; determining a binarization degree corresponding to the area to be optimized according to the number of the conductive units to be optimized and the number of the conductive units; If it is determined that the binarization degree corresponding to the area to be optimized is greater than the set binarization degree threshold, the original material corresponding to the conductive unit to be optimized is determined according to the updated relative dielectric constant corresponding to the conductive unit to be optimized.

8. The method according to claim 1, wherein If it is determined that the number of the conductive units to be optimized is greater than a set number threshold, determining the original materials corresponding to the conductive units to be optimized according to the updated relative permittivities corresponding to the conductive units to be optimized specifically includes: If it is determined that the number of the conductive units to be optimized is greater than the set number threshold, the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is greater than the set relative dielectric constant threshold is set as the chip material, and the original material corresponding to the conductive units to be optimized whose updated relative dielectric constant is not greater than the set relative dielectric constant threshold is set as the cladding material.

9. The method according to claim 1, wherein Before optimizing the photonic device with maximizing the target performance indicator as the optimization goal, the method further includes: For each conductive unit to be optimized, determining a performance index of the region to be optimized before simulating the replacement of the original material corresponding to the conductive unit to be optimized, as an original performance index; If the target performance index is greater than the original performance index, determining that the material corresponding to the conductive unit to be optimized is the replaced material; If the target performance index is not greater than the original performance index, it is determined that the material corresponding to the conduction unit to be optimized is the original material.

10. The method according to claim 1, wherein Before optimizing the photonic device with maximizing the target performance indicator as the optimization goal, the method further includes: Determine each to-be-optimized conduction unit whose material is the original material as the conduction unit to be replaced; For each conduction unit to be replaced in each round of replacement, if it is determined that the target performance indicator does not meet the set conditions, a simulated replacement is performed on the material corresponding to the conduction unit to be replaced in this round of replacement, and the performance indicator of the area to be optimized after replacing the original material corresponding to the conduction unit to be replaced in this round of replacement is determined as the target performance indicator.

11. The method according to claim 1, wherein The photonic device comprises an input waveguide and two output waveguides; Obtain the region of the photonic device to be optimized, including: Obtaining the design area of the photonic device; The design area is divided according to one input waveguide and two output waveguides to obtain an area to be optimized.

12. A device for optimizing photonic devices, characterized in that: include: A first determining module is used to determine a region to be optimized of the photonic device, where the region to be optimized is composed of an arrangement of the conductive units; An initialization module, configured to initialize the relative dielectric constant corresponding to each conductive unit in the area to be optimized; an updating module, configured to perform optical simulation on the area to be optimized to obtain a simulation result corresponding to the area to be optimized, and update the relative dielectric constant corresponding to each conductive unit according to the simulation result corresponding to the area to be optimized to obtain an updated relative dielectric constant corresponding to each conductive unit; A second determining module is configured to determine a conductive unit whose updated relative permittivity is within a set relative permittivity range as a conductive unit to be optimized; a third determining module, configured to determine, if it is determined that the number of the conductive units to be optimized is greater than a set number threshold, original materials corresponding to the conductive units to be optimized based on the updated relative permittivities corresponding to the conductive units to be optimized; a replacement module configured to simulate, for each conductive unit to be optimized, replacing an original material corresponding to the conductive unit to be optimized during an optical simulation, and determine a performance index of the region to be optimized after the simulated replacement of the original material corresponding to the conductive unit to be optimized as a target performance index; The optimization module is used to optimize the photonic device by taking maximizing the target performance index as the optimization goal.

13. A computer-readable storage medium, characterized in that The storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 11 is implemented.

14. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the method according to any one of claims 1 to 11 is implemented.

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