Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and storage medium

Abstract

Disclosed is a technique for suppressing reduction in in-plane uniformity of a film formed on a substrate. The technique includes a processing chamber, a processing gas supply system that supplies a processing gas to the processing chamber, an exhaust system that exhausts the inside of the processing chamber, a plasma generation structure that supplies plasma to the processing chamber, a rotating shaft that rotatably supports a boat having electric conductivity and holding a plurality of substrates in the processing chamber, and an internal conductor that is provided inside the rotating shaft and electrically connected to the boat.

Description

Technical Field

[0001] This invention relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a storage medium, and in particular, to a technique for processing a substrate using plasma. Background Technology

[0002] In the semiconductor device manufacturing process, as an example of substrate processing that utilizes plasma, there is a film formation process that uses methods such as CVD (Chemical Vapor Deposition) to deposit a predetermined thin film on the substrate (see Patent Documents 1 and 2).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 18 / 016131

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-188237

[0007] Patent Document 3: International Publication No. 19 / 035223

[0008] Patent Document 4: Japanese Patent Application Publication No. 2020-161539 Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] Furthermore, in substrate processing using plasma, it is sometimes difficult to ensure that the plasma or active species generated by the plasma source are distributed throughout the entire surface of the substrate. In particular, when multiple substrates are processed while being held in a multilayer configuration, even if plasma is supplied from the side of the substrate, the concentration of active species decreases in the center of the substrate, potentially leading to reduced in-plane uniformity of the thin film formed on the surface of the substrate.

[0011] Considering the above, the purpose of this disclosure is to suppress the reduction of in-plane uniformity of thin films formed on the surface of a substrate.

[0012] Solution for solving the problem

[0013] According to one aspect of this disclosure, a technology is provided comprising: a processing chamber; a processing gas supply system that supplies processing gas to the processing chamber; an exhaust system that exhausts gas from the processing chamber; a plasma generating structure that supplies plasma to the processing chamber; a rotating shaft that rotatably supports a conductive crystal boat that holds multiple substrates within the processing chamber; and an internal conductor disposed inside the cylindrical rotating shaft and electrically connected to the crystal boat.

[0014] Invention Effects

[0015] According to this disclosure, it is possible to suppress the reduction of in-plane uniformity of thin films formed on the surface of a substrate. Attached Figure Description

[0016] Figure 1 This is a perspective view of a substrate processing apparatus according to one embodiment.

[0017] Figure 2 It means Figure 1 The processing furnace shown Figure 4 B-B sectional view.

[0018] Figure 3 It means Figure 2 The longitudinal sectional view of the crystal boat and its rotating mechanism shown.

[0019] Figure 4 yes Figure 2 The shown is a cross-sectional view of the processing furnace along line A-A.

[0020] Figure 5 It means Figure 4 A three-dimensional view of part C.

[0021] Figure 6 It means Figure 1 The block diagram shown is of the controller used in the substrate processing apparatus and the components controlled by the controller.

[0022] Figure 7 It means Figure 1 The flowchart illustrates the manufacturing process of forming a silicon oxide film on the surface of a wafer using the substrate processing apparatus shown. Detailed Implementation

[0023] Hereinafter, a substrate processing apparatus according to one embodiment will be described with reference to the accompanying drawings. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not be consistent with the actual situation. Additionally, the dimensional relationships and ratios of the elements may not be consistent between multiple drawings.

[0024] (Structure of the substrate processing device)

[0025] like Figure 1 As shown, the substrate processing apparatus 101 is, for example, a semiconductor manufacturing apparatus for manufacturing semiconductor devices. In the substrate processing apparatus 101, a wafer cassette 110 is used to house a wafer 200, which serves as a substrate, as an example. The wafer 200 is made of a semiconductor silicon or similar material.

[0026] The substrate processing apparatus 101 includes a housing 111. A wafer cassette stage 114 is disposed inside the housing 111. Wafer cassettes 110 are moved onto the wafer cassette stage 114 by an in-process transfer device (not shown) or removed from the wafer cassette stage 114.

[0027] also, Figure 1 The arrows shown indicate the up-down, front-back, and left-right directions of the substrate processing device 101 (box 111), respectively.

[0028] The wafer cassette 110 is placed on the wafer cassette stage 114 by an in-process transfer device (not shown). At this time, the wafer cassette 110 is placed on the wafer cassette stage 114 with the wafer 200 inside the wafer cassette 110 in a vertical position and the wafer inlet / outlet of the wafer cassette 110 facing upwards.

[0029] The wafer cassette stage 114 is configured to rotate the wafer cassette 110 90° toward the rear of the housing 111, so that the wafers 200 inside the wafer cassette 110 are in a horizontal position and the wafer inlet / outlet of the wafer cassette 110 faces toward the rear of the housing 111 of the substrate processing apparatus 101.

[0030] A wafer cassette rack 105 is provided approximately at the center of the front-to-back direction within the housing 111. The wafer cassette rack 105 is configured to store multiple wafer cassettes 110 in multiple layers and rows. The wafer cassette rack 105 is provided with a transfer rack 123 for storing the wafer cassettes 110.

[0031] A spare wafer cassette rack 107 is provided above the wafer cassette stage 114. The spare wafer cassette rack 107 stores wafer cassettes 110 in a spare location. A wafer cassette conveying device 118 is provided between the wafer cassette stage 114 and the wafer cassette rack 105.

[0032] The wafer cassette transport device 118 includes a wafer cassette lifter 118a capable of lifting and lowering while holding the wafer cassette 110, and a wafer cassette transport mechanism 118b serving as a transport mechanism. The wafer cassette transport device 118 is configured to transport the wafer cassette 110 between the wafer cassette stage 114, the wafer cassette rack 105, and the spare wafer cassette rack 107 through the coordinated operation of the wafer cassette lifter 118a and the wafer cassette transport mechanism 118b.

[0033] A wafer transfer device 125 is provided behind the wafer rack 105. The wafer transfer device 125 includes a wafer transfer mechanism 125a capable of moving the wafer 200 in the horizontal direction and a lifter 125b for raising and lowering the wafer transfer mechanism 125a.

[0034] The wafer transfer mechanism 125a is provided with a clamp 125c for picking up the wafer 200. The wafer transfer device 125 is configured such that, through the coordinated action of the wafer transfer mechanism 125a and the lifter 125b, it can load (insert) the wafer 200 into the wafer boat 217, or unload (remove) the wafer 200 from the wafer boat 217.

[0035] A heat treatment furnace 202 for heat treatment of wafer 200 is provided above the rear of the housing 111. The opening at the lower end of the heat treatment furnace 202 can be opened and closed by a furnace opening baffle 147.

[0036] Below the processing furnace 202, there is a crystal boat lifter 115, which serves as a lifting mechanism for raising and lowering the crystal boat 217 relative to the processing furnace 202. An arm 128 is connected to the lifting platform of the crystal boat lifter 115. A sealing cover 219 is horizontally installed on the arm 128.

[0037] The sealing cover 219 is configured to vertically support the wafer boat 217 and close the opening at the lower end of the processing furnace 202. The sealing cover 219 is raised and lowered using the wafer boat lifter 115, allowing the wafer boat 217, supported by the sealing cover 219, to be moved in and out of the processing chamber 201. Furthermore, the multiple wafers 200 held in the wafer boat 217, while inserted into the processing chamber 201, are heated to a predetermined temperature by the heater 207, described later.

[0038] The crystal boat 217 is made of non-metallic material and is configured to hold multiple (e.g., about 50 to 150) wafers 200 in a horizontal position with predetermined intervals (equal spacing) in the vertical direction. Furthermore, the crystal boat 217 holds the multiple wafers 200 such that their centers are coaxial.

[0039] A cleaning unit 134a for supplying clean air is provided above the wafer tray 105. A cleaning unit 134b for supplying clean air is provided at the left end of the housing 111.

[0040] (Structure of the processing furnace)

[0041] Next, the structure of the processing furnace 202 of the substrate processing apparatus 101 will be described in detail.

[0042] like Figure 2 As shown, a heater 207 is provided in the processing furnace 202 as a heating device (heating unit) for heating the wafer 200. The heater 207 has a cylindrical heat insulation member that is closed at the top and multiple heating wires provided on the heat insulation member. Inside the heater 207, a quartz reaction tube 203 is provided concentrically with the heater 207.

[0043] A sealing cover 219 is provided below the reaction tube 203, which serves as a furnace opening cover capable of airtightly sealing the opening at the lower end of the reaction tube 203. The sealing cover 219 abuts against the lower end of the reaction tube 203 from the lower side in the vertical direction. In addition, the sealing cover 219 is made of a metal such as stainless steel and is formed in a disc shape.

[0044] An annular flange is provided at the lower end of the reaction tube 203. An airtight component (hereinafter O-ring) 220 is disposed between the lower surface of the flange and the upper surface of the sealing cap 219. The gap between the flange and the sealing cap 219 is airtightly sealed by the O-ring 220.

[0045] Furthermore, the processing chamber 201 of this embodiment is configured to include a reaction tube 203 and a sealing cap 219.

[0046] like Figure 1 As shown, a boat 217 holding multiple wafers 200 is disposed above the sealing cover 219. The boat 217 is supported by a boat support platform 218 described later. The boat 217 has a base plate 210, a top plate 211, multiple support pillars 212, and multiple electrode plates 214 (see reference). Figure 3 Multiple supports 212 are erected on the base plate 210. A top plate 211 is located at the upper end of these supports 212.

[0047] like Figure 3 As shown, multiple electrode plates 214 are disposed on multiple support pillars 212. The multiple electrode plates 214 are formed in a ring shape. In addition, a through hole 214A is formed in the central part of the multiple electrode plates 214. These electrode plates 214 are supported on the multiple support pillars 21 in a horizontal position and with predetermined intervals in the vertical direction. A wafer 200 is mounted on the upper surface of these electrode plates 214.

[0048] Support grooves 213 for inserting the outer periphery of a wafer 200 are formed on multiple support pillars 212. Each support groove 213 is disposed adjacent to the upper surface of the outer periphery of an electrode plate 214. Thus, the upper surface of the outer periphery of the electrode plate 214 is exposed within each support groove 213. Therefore, when the outer periphery of the wafer 200 is inserted into each support groove 213, the outer periphery of the wafer 200 rests on the upper surface of the electrode plate 214. Furthermore, when the outer periphery of the wafer 200 rests on the upper surface of the outer periphery of the electrode plate 214, the through-hole 214A of the electrode plate 214 is closed by the wafer 200. Thus, a processing space 215 is formed between adjacent wafers 200 in the vertical direction. Processing gas and plasma (described later) are supplied to each processing space 215.

[0049] The base plate 210, multiple support pillars 212, and multiple electrode plates 214 constituting the crystal boat 217 are formed, for example, from doped silicon carbide, which has electrical conductivity and heat resistance. Thus, when wafers 200 are respectively placed on the multiple electrode plates 214, the crystal boat 217 and the multiple wafers 200 can be electrically connected (conducted).

[0050] Furthermore, the crystal boat 217 only needs to have electrical conductivity on the back side of at least the electrode plate 214 and the base plate 210, or only a portion of its surface may be conductive. Therefore, the crystal boat 217 can be formed, for example, by coating the surface of heat-resistant quartz or silicon carbide with a conductive high-melting-point metal coating. Additionally, the electrode plate 214 and the top plate 211 are not essential. Particularly when conductivity based on ohmic contact or tunneling effect can be achieved on the back side of the wafer 200, the wafer 200 can be directly placed on the support groove 213.

[0051] A boat rotation mechanism 267 for rotating the boat 217 is provided on the sealing cover 219. The boat rotation mechanism 267 has a rotation shaft 264 and a drive source (not shown) such as a motor for rotating the rotation shaft 264. The rotation shaft 264 extends through the sealing cover 219 in the vertical direction and is arranged throughout the interior and exterior of the processing chamber 201. It can be connected to the main body of the boat rotation mechanism 267 via a bearing (not shown). In addition, the gap between the rotation shaft 264 and the main body of the boat rotation mechanism 267 can be sealed by, for example, magnetic fluid.

[0052] The rotating shaft 264 includes a cylindrical rotating shaft 265, an internal conductor 266, and an insulating ceramic tube 266a. The cylindrical rotating shaft 265 is formed in a cylindrical shape. This cylindrical rotating shaft 265 is formed, for example, from a ferromagnetic metal, and is mechanically connected to the crystal boat support 218 to transmit rotation. The internal conductor 266 is disposed inside the cylindrical rotating shaft 265.

[0053] The inner conductor 266 is formed into a cylindrical shape from a conductive metal or the like. Furthermore, the inner conductor 266 is concentrically disposed inside the cylindrical rotating shaft 265, and its upper end protrudes beyond the upper surface of the cylindrical rotating shaft 265. An insulating porcelain tube 266a, formed of, for example, alumina, is disposed between the cylindrical rotating shaft 265 and the inner conductor 266, electrically insulating the two. A portion of the inner circumference and a portion of the outer circumference of the insulating porcelain tube 266a are deposited with metal, and are integrated and sealed by brazing with the inner conductor 266 and the cylindrical rotating shaft 265. Additionally, a DC power supply 269 is electrically connected to the lower part of the inner conductor 266 via a slip ring 268. Thus, a stable voltage (DC bias) is supplied to the rotating inner conductor 266 from the DC power supply 269 via the slip ring 268. The DC power supply 269 can generate a voltage in the range of, for example, -10kV to 10kV, and the voltage can be controlled by the controller 280 described later.

[0054] A crystal boat support platform 218 for supporting the crystal boat 217 is provided at the upper end of the rotating shaft 264 (cylindrical rotating shaft 265). The crystal boat support platform 218 can rotate integrally with the rotating shaft 264. The base plate 210 of the crystal boat 217 is fixed to the upper surface of the crystal boat support platform 218. Thus, by rotating the rotating shaft 264, the crystal boat support platform 218 and the crystal boat 217 rotate integrally.

[0055] A crystal boat support platform 218 is positioned above the sealing cover 219. This crystal boat support platform 218 has an insulating component 221 and a metal component 222. The insulating component 221 is, for example, formed in a disk shape. Furthermore, the insulating component 221 is formed, for example, from quartz or silicon carbide, which have insulating and heat-resistant properties. A recess is formed on the upper surface 221U of the insulating component 221, where the metal component 222 is embedded. The lower surface of the bottom plate 210 of the crystal boat 217 is fixed to the upper surface 221U.

[0056] The metal component 222 is formed, for example, of a conductive metal (high melting point metal). This metal component 222 has a contact portion 223 and a connecting portion 224. The contact portion 223 is formed, for example, in a disk shape. This contact portion 223 is embedded in the upper part of the insulating component 221. Furthermore, the upper surface of the contact portion 223 is a contact surface 223U that protrudes from the upper surface 221U of the insulating component 221 and contacts the lower surface of the bottom plate 210 of the crystal boat 217. By bringing the contact surface 223U of the contact portion 223 into contact with the lower surface of the bottom plate 210, the crystal boat 217 and the metal component 222 are electrically connected (conducted).

[0057] Furthermore, the contact surface 223U of the contact portion 223 is smaller than the lower surface of the base plate 210 of the crystal boat 217. Therefore, the entire surface of the contact surface 223U of the contact portion 223 can be covered by the lower surface of the base plate 210. This lower surface of the base plate 210 protects the contact surface 223U of the contact portion 223 from the effects of the processing gases and plasmas described later.

[0058] The connecting portion 224 is, for example, formed in a cylindrical shape. This connecting portion 224 extends downward from the lower surface of the contact portion 223 and is electrically connected (conducting) to the upper end of the internal conductor 266. Thus, the wafer 200 supported on the boat 217 and the internal conductor 266 are electrically connected via the metal component 222. Furthermore, in this context, the electrical connection does not require the wafer 200 to be conductive; it is sufficient that some conductors continuously extending from the internal conductor 266 reach the wafer 200.

[0059] like Figure 4 As shown, three gas supply pipes 310, 320, and 330 for supplying processing gas (raw material gas) are connected to the processing chamber 201.

[0060] Nozzles 410, 420, and 430 are installed inside the processing chamber 201. Nozzles 410, 420, and 430 penetrate the lower part of the reaction tube 203. A gas supply pipe 310 is connected to nozzle 410. A gas supply pipe 320 is connected to nozzle 420. A gas supply pipe 330 is connected to nozzle 430.

[0061] (Gas supply system 301)

[0062] like Figure 2 As shown, in the gas supply pipe 310, starting from the upstream side, there are valve 314 as an on / off valve, liquid mass flow controller 312 as a liquid raw material flow control device, vaporizer 315 as a vaporization unit (vaporization device) and valve 313 as an on / off valve.

[0063] The downstream end of the gas supply pipe 310 is connected to the lower end of the nozzle 410. The nozzle 410 extends vertically along the inner wall of the reaction tube 203. In addition, a plurality of gas supply holes 411 are provided on the side of the nozzle 410 for supplying processing gas (raw material gas) to the wafer 200.

[0064] like Figure 3 As shown, a plurality of gas supply holes 411 open on the side of the nozzle 410 such that they face the wafer 200 inserted into the reaction tube 203. Furthermore, the plurality of gas supply holes 411 are arranged vertically at intervals opposite to a plurality of processing spaces 215 formed within the boat 217. Thus, processing gas is supplied from the plurality of gas supply holes 411 to the plurality of processing spaces 215 respectively.

[0065] like Figure 2 As shown, a vent pipe 610 and a valve 612, which are connected to the exhaust pipe 232 described later, are provided between the valve 313 and the vaporizer 315 of the gas supply pipe 310. Furthermore, in this embodiment, the processing gas supply system 301 mainly consists of the gas supply pipe 310, valve 314, liquid mass flow controller 312, vaporizer 315, valve 313, nozzle 410, vent pipe 610, and valve 612.

[0066] A carrier gas supply pipe 510 for supplying carrier gas (inert gas) is connected downstream of valve 313 in gas supply pipe 310. A mass flow controller 512 and valve 513 are provided in carrier gas supply pipe 510. In this embodiment, the carrier gas supply system (inert gas supply system) 501 is mainly composed of carrier gas supply pipe 510, mass flow controller 512, and valve 513.

[0067] In the processing gas supply system 301, the liquid raw material, whose flow rate has been adjusted by the liquid mass flow controller 312, is supplied to the vaporizer 315. Then, the liquid raw material vaporized by the vaporizer 315 becomes the processing gas and is supplied to the gas supply pipe 310.

[0068] Here, without supplying processing gas to the processing chamber 201, valve 313 is closed and valve 612 is opened to allow processing gas to flow to the vent pipe 610.

[0069] On the other hand, when processing gas is supplied to the processing chamber 201, valve 612 is closed and valve 313 is opened to supply processing gas to the gas supply pipe 310. Additionally, in the carrier gas supply system 501, the carrier gas, whose flow rate has been adjusted by the mass flow controller 512, is supplied to the carrier gas supply pipe 510 via valve 513. Furthermore, the carrier and raw material gases converge in the gas supply pipe 310 downstream of valve 313 and are supplied to the processing chamber 201 via nozzle 410.

[0070] (Gas supply system 302)

[0071] like Figure 2 As shown, in the gas supply pipe 320, starting from the upstream side, a mass flow controller 322 as a flow control device and a valve 323 as an on / off valve are sequentially arranged. A vent pipe 620 connected to the exhaust pipe 232 and the valve 622 are arranged between the valve 323 and the mass flow controller 322 in the gas supply pipe 320. The gas supply system 302 mainly consists of the gas supply pipe 320, the mass flow controller 322, the valve 323, the nozzle 420, the buffer chamber 423, the vent pipe 620, and the valve 622. Furthermore, the downstream end of the gas supply pipe 320 is connected to the lower end of the nozzle 420.

[0072] Nozzle 420 is disposed within buffer chamber 423, which serves as a gas dispersion space (discharge chamber, discharge space). Electrode protection tubes 451 and 452, described later, are disposed within buffer chamber 423. Nozzle 420, electrode protection tube 451, and electrode protection tube 452 are arranged in this order within buffer chamber 423.

[0073] like Figure 4 As shown, the buffer chamber 423 is formed by the inner wall of the reaction tube 203 and the buffer chamber wall 424. The buffer chamber wall 424 extends vertically along the inner wall of the reaction tube 203. The horizontal cross-sectional shape of the buffer chamber wall 424 is C-shaped. The buffer chamber wall 424 extends from the lower part to the upper part of the inner wall of the reaction tube 203.

[0074] The buffer chamber wall 424 has a counter wall opposite to the wafer 200 inserted into the reaction tube 203. Multiple gas supply holes 425 for supplying plasma to the wafer 200 are provided on the counter wall. The multiple gas supply holes 425 open in the counter wall between the electrode protection tube 451 and the electrode protection tube 452.

[0075] like Figure 3 and Figure 4 As shown, a plurality of gas supply holes 425 are opened on the wall facing the wafer 200 side. The plurality of gas supply holes 425 are arranged vertically with a gap between them and the plurality of processing spaces 215. Thus, plasma is supplied to the plurality of processing spaces 215 from the plurality of gas supply holes 425. The opening areas and spacing of the plurality of gas supply holes 425 are the same.

[0076] like Figure 4 As shown, nozzle 420 is disposed at one end of buffer chamber 423. Nozzle 420 extends vertically along the inner wall of reaction tube 203. Multiple gas supply holes 421 for injecting gas are provided on the side of nozzle 420. The multiple gas supply holes 421 open on the side of nozzle 420 in a manner toward the center of buffer chamber 423.

[0077] The multiple gas supply holes 421 are arranged in a vertically spaced manner, similar to the gas supply holes 425 of the buffer chamber 423. The opening area and spacing of the multiple gas supply holes 421 can be set to be the same from the upstream side (lower part) to the downstream side (upper part) of the nozzle 420. Alternatively, the opening area of ​​the multiple gas supply holes 421 can be increased or the spacing of the multiple gas supply holes 421 can be decreased from the upstream side to the downstream side of the nozzle 420.

[0078] In this way, by adjusting the opening area and spacing of the multiple gas supply holes 421, the flow rate of the gas injected from the multiple gas supply holes 421 can be set to be almost the same. Even if the flow rate of the gas injected from the multiple gas supply holes 421 is different, the flow rate and flow rate of the gas injected into the processing chamber 201 from the multiple gas supply holes 425 can be homogenized.

[0079] return Figure 2 A carrier gas supply pipe 520 for supplying carrier gas (inert gas) is connected downstream of valve 323 in gas supply pipe 320. A mass flow controller 522 and valve 523 are installed in the carrier gas supply pipe 520. Furthermore, in this embodiment, the carrier gas supply system (inert gas supply system) 502 is mainly composed of the carrier gas supply pipe 520, the mass flow controller 522, and the valve 523.

[0080] Gas supply pipe 320 is supplied with gas feedstock gas whose flow rate has been adjusted by mass flow controller 322.

[0081] Here, without supplying processing gas to the processing chamber 201, valve 323 is closed and valve 622 is opened to allow processing gas to flow to the vent pipe 620.

[0082] On the other hand, when processing gas is supplied to the processing chamber 201, valve 622 is closed and valve 323 is opened to supply processing gas to the gas supply pipe 320. Additionally, in the carrier gas supply system 502, the carrier gas, whose flow rate has been adjusted by the mass flow controller 522, is supplied to the carrier gas supply pipe 520 via valve 523. Then, the carrier gas and processing gas converge in the gas supply pipe 320 downstream of valve 323 and are supplied to the processing chamber 201 via nozzle 420 and buffer chamber 423.

[0083] (Gas supply system 303)

[0084] The structure of gas supply system 303 is basically the same as that of gas supply system 302. For example... Figure 2 As shown, in the gas supply pipe 330, starting from the upstream side, a mass flow controller 332 as a flow control device and a valve 333 as an on / off valve are sequentially arranged. A vent pipe 630 connected to the exhaust pipe 232 and the valve 632 are arranged between the valve 333 and the mass flow controller 332 in the gas supply pipe 330. The gas supply system 303 mainly consists of the gas supply pipe 330, the mass flow controller 332, the valve 333, the nozzle 430, the buffer chamber 433, the vent pipe 630, and the valve 632. Furthermore, the downstream end of the gas supply pipe 330 is connected to the lower end of the nozzle 430.

[0085] Nozzle 430 is disposed within buffer chamber 433, which serves as a gas dispersion space (discharge chamber, discharge space). Electrode protection tubes 461 and 462, described later, are disposed within buffer chamber 433. Nozzle 430, electrode protection tube 461, and electrode protection tube 462 are arranged in this order within buffer chamber 433. As described later, buffer chamber 433 and its internal structure are symmetrical to buffer chamber 423; detailed description is omitted.

[0086] The buffer chamber 433 is formed by the inner wall of the reaction tube 203 and the buffer chamber wall 434. The buffer chamber wall 434 extends vertically along the inner wall of the reaction tube 203. The horizontal cross-sectional shape of the buffer chamber 433 is C-shaped.

[0087] The buffer chamber wall 434 has a counter wall opposite to the wafer 200 inserted into the reaction tube 203. Multiple gas supply holes 435 for supplying plasma to the wafer 200 are provided on the counter wall. The multiple gas supply holes 435 open in the counter wall between the electrode protection tube 461 and the electrode protection tube 462.

[0088] Multiple gas supply holes 435 are opened toward the wafer 200 side. The multiple gas supply holes 435 are arranged vertically with spacing opposite to multiple processing spaces 215.

[0089] A nozzle 430 is disposed at one end of a buffer chamber 433. The nozzle 430 extends vertically along the inner wall of the reaction tube 203. On the side of the nozzle 430, a plurality of gas supply holes 431 for injecting gas are provided at intervals in the vertical direction. The plurality of gas supply holes 431 open on the side of the nozzle 430 toward the center of the buffer chamber 433.

[0090] return Figure 2 A carrier gas supply pipe 530 for supplying carrier gas (inert gas) is connected downstream of valve 333 in the gas supply pipe 330. A mass flow controller 532 and valve 533 are installed in the carrier gas supply pipe 530. Furthermore, in this embodiment, the carrier gas supply system (inert gas supply system) 503 is mainly composed of the carrier gas supply pipe 530, the mass flow controller 532, and the valve 533. The structure of the carrier gas supply system 503 is basically the same as that of the carrier gas supply system 502.

[0091] Gas feedstock gas, whose flow rate has been adjusted by mass flow controller 332, is supplied through gas supply pipe 330.

[0092] (Remote Plasma Source)

[0093] like Figure 4 As shown, elongated rod-shaped electrodes 471 and 472 are provided within the buffer chamber 423. Rod-shaped electrodes 471 and 472 extend vertically from the lower to the upper part of the reaction tube 203. They are arranged approximately parallel to the nozzle 420. Rod-shaped electrodes 471 and 472 are covered by electrode protection tubes 451 and 452, which serve as protective tubes.

[0094] Rod electrode 471 is connected to a high-frequency (RF) power supply 270 via a matching adapter 271. Rod electrode 472 is connected to a ground wire 272, which serves as a reference potential. Thus, when power is supplied to rod electrode 471 from the RF power supply 270, plasma is generated in the plasma generation region between rod electrode 471 and rod electrode 472.

[0095] Furthermore, in this embodiment, the first remote plasma generating structure 429 is mainly composed of rod-shaped electrodes 471 and 472, electrode protection tubes 451 and 452, a buffer chamber 423, and a gas supply port 425. Additionally, in this embodiment, the first remote plasma source, serving as a plasma generator (plasma generating unit), is mainly composed of rod-shaped electrodes 471 and 472, electrode protection tubes 451 and 452, a matching device 271, and a high-frequency power supply 270. The first remote plasma source functions as an activation mechanism that uses plasma to activate gas. The buffer chamber 423 functions as a plasma generating chamber.

[0096] Elongated rod-shaped electrodes 481 and 482 are disposed within buffer chamber 433. Rod-shaped electrodes 481 and 482 extend vertically from the bottom to the top of reaction tube 203. They are arranged approximately parallel to nozzle 430. Rod-shaped electrodes 481 and 482 are covered by electrode protection tubes 461 and 462, which serve as protective tubes.

[0097] Rod-shaped electrode 481 is connected to high-frequency power supply 270 via matching device 271. Rod-shaped electrode 482 is connected to ground wire 272, which serves as a reference potential. Thus, when power is supplied from high-frequency power supply 270 to rod-shaped electrode 481, plasma is generated in the plasma generation region between rod-shaped electrode 481 and rod-shaped electrode 482.

[0098] Furthermore, in this embodiment, the second remote plasma generating structure 439 is mainly composed of rod-shaped electrodes 481 and 482, electrode protection tubes 461 and 462, a buffer chamber 433, and a gas supply port 435. Additionally, in this embodiment, the second remote plasma source, serving as a plasma generator (plasma generating unit), is mainly composed of rod-shaped electrodes 481 and 482, electrode protection tubes 461 and 462, a matching device 271, and a high-frequency power supply 270. The second remote plasma source functions as an activation mechanism that uses plasma to activate gas. The buffer chamber 433 functions as a plasma generating chamber.

[0099] like Figure 5As shown, electrode protection tubes 461 and 462 are inserted into the buffer chamber 423 near the lower part of the crystal boat support stage 218 through through holes 204 and 205 formed in the reaction tube 203. Electrode protection tubes 461 and 462 are fixed to the reaction tube 203 through the through holes 204 and 205. Electrode protection tubes 461 and 462 are fixed to the mounting plate 401 with holes 402 and 403 passing through the mounting plate 401 located in the buffer chamber 423. The mounting plate 401 is fixed to the reaction tube 203 and the buffer chamber wall 424.

[0100] Furthermore, electrode protection tubes 451 and 452 have the same structure as electrode protection tubes 461 and 462.

[0101] like Figure 4 As shown, the interiors of electrode protection tubes 451 and 452 are isolated from the atmosphere of buffer chamber 423. Similarly, the interiors of electrode protection tubes 461 and 462 are isolated from the atmosphere of buffer chamber 433.

[0102] Here, the rod-shaped electrodes 471, 472, 481, and 482, respectively inserted into the electrode protection tubes 451, 452, 461, and 462, may be oxidized due to the heat from the heater 207. Therefore, the electrode protection tubes 451, 452, 461, and 462 are provided with inert gas purification mechanisms to suppress the oxidation of the rod-shaped electrodes 471, 472, 481, and 482.

[0103] The inert gas purification mechanism fills or purifies the interior of electrode protection tubes 451, 452, 461, and 462 with inert gases such as nitrogen, thereby reducing the oxygen concentration inside the electrode protection tubes 451, 452, 461, and 462. This suppresses the oxidation of rod electrodes 471, 472, 481, and 482.

[0104] In this embodiment, remote plasma is used in the substrate processing. In the remote plasma, plasma generated in buffer chambers 423 and 433, which are separate from the processing chamber 201, is supplied to the processing chamber 201 to perform plasma processing on the wafer 200 within the processing chamber 201. In this embodiment, two rod-shaped electrodes 471 and 472 are housed in buffer chamber 423, and two rod-shaped electrodes 481 and 482 are housed in buffer chamber 433. Rod-shaped electrodes 472 and 482 are grounded and subjected to unbalanced power supply; therefore, most of the electric field lines extending from rod-shaped electrodes 471 and 481 extend towards rod-shaped electrodes 472 and 482, but another portion extends towards the cover or housing 111 of the grounded heater housing 207.

[0105] This results in the formation of a region with a strong electric field surrounding the two rod-shaped electrodes 471 and 472, and more specifically, a region with a strong electric field surrounding the electrode protection tubes 451 and 452, thus generating plasma. Similarly, an electric field is generated surrounding the two rod-shaped electrodes 481 and 482, and more specifically, surrounding the two electrode protection tubes 461 and 462, thus generating plasma. That is, the gas supplied from nozzles 420 and 430 and filling the buffer chambers 423 and 433 is plasma-enhanced, generating active species (plasma active species). In addition, a weak electric field is also generated in the area outside the buffer chambers 423 and 433 within the processing chamber 201, which can generate a small amount of plasma. This method is called soft plasma. The active species generated in this way reach the surface of each wafer 200.

[0106] By providing buffer chambers 423 and 433 on the inner wall of the reaction tube 203 and using soft plasma, in this embodiment, compared with the case where buffer chambers 423 and 433 are provided on the outer wall of the reaction tube 203 and soft plasma is not used, plasma active species can reach the surface of the wafer 200 without deactivation.

[0107] In order to reduce the processing temperature of the wafer 200 using plasma, it is necessary to increase the high-frequency power during plasma formation. However, increasing the high-frequency power during plasma formation may increase the damage to the wafer 200 or the film formed on the surface of the wafer 200.

[0108] In contrast, such as Figure 4 As shown, the substrate processing apparatus 101 of this embodiment includes two remote plasma generating structures: a first remote plasma generating structure 429 and a second remote plasma generating structure 439. Therefore, in this embodiment, compared to the case where there is only one remote plasma generating structure, even if the high-frequency power supplied to the first remote plasma generating structure 429 and the second remote plasma generating structure 439 is small, a sufficient amount of plasma can be generated. Therefore, in this embodiment, when performing plasma processing on the wafer 200, damage to the wafer 200 or the film formed on the surface of the wafer 200 can be reduced. Furthermore, in this embodiment, the processing temperature of the wafer 200 can be reduced.

[0109] Furthermore, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 are symmetrical about each other with respect to the vertical plane passing through the center of the wafer 200 (the center of the reaction tube 203). This allows for a more uniform supply of plasma from the first remote plasma generating structure 429 and the second remote plasma generating structure 439 to the upper surface of the wafer 200. As a result, a more uniform film can be formed on the surface of the wafer 200.

[0110] Furthermore, the exhaust port 230 is positioned on a horizontal line passing through the center of the wafer 200 (the center of the reaction tube 203). This allows for a more uniform supply of plasma to the entire upper surface of the wafer 200. Moreover, the gas supply orifice 411 of the nozzle 410 is positioned on a horizontal line passing through the center of the wafer 200 (the center of the reaction tube 203). This allows for a more uniform supply of raw material gas to the entire upper surface of the wafer 200. As a result, a more uniform film can be formed on the upper surface of the wafer 200.

[0111] Furthermore, the distance from the gas supply hole 411 of the nozzle 410 to the gas supply hole 425 of the buffer chamber 423 and the distance from the gas supply hole 411 of the nozzle 410 to the gas supply hole 435 of the buffer chamber 433 are set to be the same. As a result, a more uniform film can be formed on the surface of the wafer 200.

[0112] like Figure 2 As shown, an exhaust pipe 231 for venting the atmosphere inside the processing chamber 201 is connected to an exhaust port 230 at the lower part of the reaction tube 203. A vacuum pump 246, serving as a vacuum venting device, is connected to the exhaust pipe 231 via a pressure sensor 245 (which acts as a pressure detector, or pressure detection unit) and an APC (Auto Pressure Controller) valve 243 (which acts as a pressure regulator, or pressure adjustment unit). Through this vacuum pump 246, the pressure inside the processing chamber 201 is reduced to a predetermined pressure (vacuum level).

[0113] The exhaust pipe 232 downstream of the vacuum pump 246 is connected to an exhaust gas treatment device (not shown). Furthermore, the APC valve 243 is configured to control the start and stop of vacuum exhaust within the treatment chamber 201 by opening and closing the valve. Additionally, the APC valve 243 is configured to adjust the pressure within the treatment chamber 201 by adjusting the valve's opening degree and conductivity.

[0114] The gas supply port 411 and the exhaust port 230 of the nozzle 410 are positioned opposite each other across the wafer 200. As a result, the processing gas supplied from the gas supply port 411 flows transversely across the surface of the wafer 200 toward the exhaust port 231, thus enabling a more uniform supply of processing gas to the entire surface of the wafer 200. Consequently, a more uniform film can be formed on the surface of the wafer 200.

[0115] Furthermore, in this embodiment, the exhaust system mainly consists of an exhaust pipe 231, an APC valve 243, a vacuum pump 246, and a pressure sensor 245.

[0116] (Temperature sensor)

[0117] A temperature sensor 263 (see reference) is installed inside the reaction tube 203 as a temperature detector. Figure 6 A controller 280, described later, is electrically connected to the temperature sensor 263. Based on the temperature information detected by the temperature sensor 263, the controller 280 adjusts the power supply to the heater 207 to achieve a desired temperature distribution within the processing chamber 201. The temperature sensor 263 is configured in an L-shape and is disposed along the inner wall of the reaction tube 203.

[0118] (Controller)

[0119] In addition, such as Figure 6 As shown, the controller 280 is configured as an industrial computer, which includes a CPU 281 that manages the overall operation of the board processing device 101, a ROM 282 and an HDD 284 that pre-store various programs and data including control programs, a RAM 283 that temporarily stores various data, and a system bus BUS 286 that connects them to each other. The controller 280 also includes a communication interface (I / F) unit 285, a display driver 287 that controls the display of various information on the display 288 and receives operation information from the display 288, and an operation input detection unit 289 that detects the operation status of the operation input unit 290.

[0120] The controller 280 includes a display 288 for displaying operation menus, etc., and an operation input unit 290 with multiple keys for inputting various information and operation instructions. The ROM 282 and HDD 284 are computer-readable storage media, and the controller 280 reads programs stored on them to perform predetermined functions. Furthermore, new programs stored on external storage media can be downloaded to the ROM 282 and HDD 284.

[0121] Temperature control unit 291, pressure control unit 294, vacuum pump 246, crystal boat rotation mechanism 267, crystal boat lifter 115, liquid mass flow controller 312, mass flow controllers 322, 332, 512, 522, 532 and valve control unit 299 are interconnected via communication interface unit 285, and various information is transmitted and received via communication interface unit 285.

[0122] CPU 281, ROM 282, RAM 283, HDD 284, display driver 287, operation input detection unit 289, and communication I / F unit 285 are interconnected via system bus BUS 286. Therefore, CPU 281 can access ROM 282, RAM 283, and HDD 284. CPU 281 can control the display of various information on display 288 via display driver 287 and grasp operation information from display 288. Furthermore, CPU 281 can send and receive various information with each component via communication I / F unit 285. Additionally, CPU 281 can grasp the user's operation status on operation input unit 290 via operation input detection unit 289.

[0123] The temperature control unit 291 includes: a heater 207; a heating power supply 250 that supplies power to the heater 207; a temperature sensor 263; a communication I / F unit 293 that transmits and receives various information, such as set temperature information, with the controller 280; and a heater control unit 292 that controls the power supply from the heating power supply 250 to the heater 207 based on the received set temperature information and the temperature information from the temperature sensor 263. The heater control unit 292 is implemented by a computer. The communication I / F unit 293 of the temperature control unit 291 and the communication I / F unit 285 of the controller 280 are connected by a cable 751.

[0124] The pressure control unit 294 includes a communication I / F unit 296 and an APC valve control unit 295. The communication I / F unit 296 transmits and receives various information, such as set pressure information and opening / closing information of the APC valve 243, between the APC valve 243, the pressure sensor 245, and the controller 280. The APC valve control unit 295 controls the opening and closing of the APC valve 243 and its opening degree based on the set pressure information, the opening / closing information of the APC valve 243, and the pressure information from the pressure sensor 245. The APC valve control unit 295 is implemented by a computer. The communication I / F unit 296 of the pressure control unit 294 and the communication I / F unit 295 of the controller 280 are connected via a cable 752.

[0125] Vacuum pump 246, crystal boat rotation mechanism 267, crystal boat lifter 115, liquid mass flow controller 312, mass flow controllers 322, 332, 512, 522, 532, high frequency power supply 270, and communication I / F unit 285 of controller 280 are connected via cables 753, 754, 755, 756, 757, 758, 759, 760, 761, 762 respectively.

[0126] The valve control unit 299 includes valves 313, 314, 323, 333, 513, 523, 533, 612, 622, and 632 as air valves, and a solenoid valve assembly 298 that controls the air supply to valves 313, 314, 323, 333, 513, 523, 533, 612, 622, and 632. The solenoid valve assembly 298 includes solenoid valves 297 corresponding to each of valves 313, 314, 323, 333, 513, 523, 533, 612, 622, and 632. The solenoid valve assembly 298 and the communication I / F unit 285 of the controller 280 are connected via a cable 763.

[0127] As mentioned above, the liquid mass flow controller 312, mass flow controllers 322, 332, 512, 522, 532, valves 313, 314, 323, 333, 513, 523, 533, 612, 622, 632, APC valve 243, heating power supply 250, temperature sensor 263, pressure sensor 245, vacuum pump 246, crystal boat rotation mechanism 267, crystal boat lifter 115, and high-frequency power supply 270 are all connected to the controller 280.

[0128] The controller 280 performs flow control on liquid mass flow controllers 312, 322, 332, 512, 522, and 532; opening and closing control on valves 313, 314, 323, 333, 513, 523, 533, 612, 622, and 632; and opening and closing control on APC valve 243. The controller 280 performs pressure control based on pressure information from pressure sensor 245 and adjusting the opening degree; temperature control based on temperature information from temperature sensor 263 and adjusting the power supply from heating power supply 250 to heater 207; and control of high-frequency power supplied from high-frequency power supply 270. The controller 280 also performs start-up and stop control on vacuum pump 246, speed regulation control on crystal boat rotation mechanism 267, and lifting control on crystal boat lifter 115.

[0129] The controller 280 controls the DC bias applied to the crystal boat 217 from the DC power supply 269 via the crystal boat rotation mechanism 267.

[0130] (Semiconductor device manufacturing method)

[0131] Next, an example of a manufacturing process for a semiconductor device (device) for manufacturing a large-scale integrated circuit (LSI) using the aforementioned substrate processing apparatus will be described. Furthermore, in the following description, the operation of each component constituting the substrate processing apparatus 101 is controlled by the controller 280.

[0132] LSI (Layer In-Size) wafer fabrication is manufactured after wafer fabrication processes on silicon wafers, followed by assembly, testing, and reliability testing. The wafer fabrication process is divided into substrate processes, such as oxidation and diffusion, on the silicon wafer, and wiring processes, which form wiring on the surface of the silicon wafer. In the wiring process, cleaning, heat treatment, and film formation are repeatedly performed, centered around photolithography. In the photolithography process, a resist pattern is formed, and this resist pattern is used as a mask for etching, thereby fabricating the underlying layer.

[0133] Here, an example of forming a silicon oxide film at a low temperature of 200°C or below using a substrate processing apparatus 101 will be described.

[0134] In the CVD method, multiple gases containing elements constituting the formed film are simultaneously supplied to a silicon wafer. In the cyclic deposition method, multiple gases containing elements constituting the formed film are alternately supplied to the silicon wafer. Then, by controlling processing conditions such as the gas supply flow rate, supply time, and plasma power, a silicon oxide film (SiO film) or a silicon nitride film (SiN film) is formed. In both the CVD and cyclic deposition methods, for example, in the case of forming a SiO film, the processing conditions are controlled to achieve a stoichiometric composition, i.e., O / Si ≈ 2. Similarly, for example, in the case of forming a SiN film, the processing conditions are controlled to achieve a stoichiometric composition, i.e., N / Si ≈ 1.33.

[0135] On the other hand, the processing conditions can be controlled with the aim of achieving a predetermined composition ratio in the formed film that differs from the stoichiometric composition. That is, the processing conditions can be controlled with the aim of ensuring that at least one of the multiple elements constituting the formed film is in excess of the other elements relative to the stoichiometric composition. It is also possible to perform film formation while controlling the ratio of the multiple elements constituting the film, i.e., the film composition ratio. The following describes a sequential example of forming a silicon oxide film with a stoichiometric composition by alternately supplying multiple gases containing different types of elements.

[0136] Here, the first element is designated as silicon (Si), and the second element as oxygen (O). The gas containing Si as the first element is called the Si feedstock gas, and the gas containing O as the second element (the reactant gas) is called the oxygen-containing gas. Then, refer to... Figure 7 An example of forming a silicon oxide film as an insulating film on a substrate will be described.

[0137] First, the heating power supply 250 that supplies power to the heater 207 is controlled to maintain the temperature inside the processing chamber 201 at 200°C or below, more preferably at 100°C or below, for example, at 100°C.

[0138] Then, multiple wafers 200 with resist patterns are loaded (wafer loading) into the crystal boat 217 (step S201).

[0139] Then, start the vacuum pump 246. Additionally, open the furnace opening baffle 147 (see reference). Figure 1 A crystal boat 217, supporting multiple wafers 200, is lifted by a crystal boat lifter 115 and loaded into the processing chamber 201 (step S202). In this state, the sealing cap 219 seals the lower end of the reaction tube 203 via the O-ring 220. Then, the crystal boat 217 is rotated by the crystal boat rotation mechanism 267, causing the multiple wafers 200 held on the crystal boat 217 to rotate.

[0140] Then, APC valve 243 is opened, and vacuum pump 246 is used to evacuate the process chamber 201 to achieve the desired pressure (vacuum level). Then, after the temperature of wafer 200 reaches 100°C and stabilizes (step S203), the following steps are performed sequentially while maintaining the temperature of the process chamber 201 at 100°C.

[0141] Furthermore, the pressure within the processing chamber 201 is measured by the pressure sensor 245. Then, based on the measured pressure, the opening degree of the APC valve 243 is controlled via feedback (pressure adjustment). Additionally, the processing chamber 201 is heated by the heater 207 to bring it to a desired temperature. At this time, based on the temperature information detected by the temperature sensor 263, the power supply from the heating power supply 250 to the heater 207 is controlled via feedback to bring the processing chamber 201 to a desired temperature (temperature adjustment).

[0142] Next, a silicon oxide film formation process is carried out by supplying SI raw material gas and oxygen-containing gas into the processing chamber 201. In the silicon oxide film formation process, the following four steps (S204 to S207) are performed in sequence.

[0143] (SI feedstock gas supply: step S204)

[0144] In step S204, SI raw material gas is supplied to the processing chamber 201 via the gas supply pipe 310 and nozzle 410 of the processing gas supply system 301.

[0145] First, before supplying SI feedstock gas to processing chamber 201, valve 313 is closed, and valves 314 and 612 are opened. Thus, the SI feedstock gas, which is liquid at room temperature, is supplied to vaporizer 315 after its flow rate is adjusted by liquid mass flow controller 312, where it is vaporized. The vaporized feedstock gas in vaporizer 315 then flows to vent pipe 610 via valve 612.

[0146] Next, while supplying SI feedstock gas to the processing chamber 201, valve 612 is closed and valve 313 is opened to supply SI feedstock gas to the gas supply pipe 310 downstream of valve 313. Additionally, valve 513 is opened to supply carrier gas (N2) from the carrier gas supply pipe 510. At this time, the flow rate of the carrier gas (N2) is adjusted by the mass flow controller 512. Then, the SI feedstock gas and the carrier gas (N2) are combined and mixed in the gas supply pipe 310 downstream of valve 313, and supplied to the processing chamber 201 through the gas supply orifice 411 of nozzle 410, and discharged from the exhaust pipe 231.

[0147] At this time, the APC valve 243 is adjusted appropriately to maintain the pressure in the processing chamber 201 within the range of 50–900 Pa, for example, 300 Pa. Additionally, the supply rate of the SI raw material gas, controlled by the liquid mass flow controller 312, is within the range of 0.05–3.00 g / min, for example, 1.00 g / min. Furthermore, the expression "50–900 Pa" in this specification refers to the lower and upper limits being included within this range. Therefore, "50–900 Pa" means "above 50 Pa and below 900 Pa." The same applies to other numerical ranges.

[0148] The wafer 200 is exposed to the SI raw material gas for a period of 2 to 6 seconds, for example, 3 seconds. In addition, the heating power supply 250, which supplies power to the heater 207, is controlled to maintain the temperature inside the processing chamber 201 at 200°C or below, more preferably at 100°C or below, for example, 100°C.

[0149] Here, the gas flowing into the processing chamber 201 consists only of SI raw material gas and N2 as an inert gas; O2 is absent. Therefore, the SI raw material gas does not undergo a gas-phase reaction with the surface or substrate film of the wafer 200 (chemisorption) to form an adsorption layer of the raw material (SI raw material gas) or a Si layer (hereinafter, including the Si layer). The chemisorption layer of the SI raw material gas includes both continuous adsorption layers of SI raw material gas molecules and discontinuous chemisorption layers. The Si layer includes both continuous layers composed of Si and Si thin films formed by their overlap. Furthermore, the continuous layers composed of Si are sometimes referred to as Si thin films.

[0150] Furthermore, when valve 523 is opened, allowing N2 (inert gas) to flow from the carrier gas supply pipe 520 to the gas supply pipe 320, it prevents the SI raw material gas from flowing back to the oxygen-containing gas side of the nozzle 420, buffer chamber 423, and gas supply pipe 320. Similarly, when valve 533 is opened, allowing N2 (inert gas) to flow from the carrier gas supply pipe 530 to the gas supply pipe 330, it prevents the SI raw material gas from flowing back to the oxygen-containing gas side of the nozzle 430, buffer chamber 433, and gas supply pipe 330. Moreover, because this is to prevent the SI raw material gas from flowing back, the flow rate of N2 (inert gas) controlled by mass flow controllers 522 and 532 can be small.

[0151] (Residual gas removal: step S205)

[0152] In step S205, residual gases such as residual SI raw material gas are removed from the processing chamber 201. Valve 313 of the gas supply pipe 310 is closed to stop the supply of SI raw material gas to the processing chamber 201, and valve 612 is opened to allow the SI raw material gas to flow into the vent pipe 610. At this time, the APC valve 243 of the exhaust pipe 231 is fully opened, and the vacuum pump 246 exhausts the gas from the processing chamber 201 to below 20 Pa, thus removing the residual SI raw material gas and other residual gases remaining in the processing chamber 201. If inert gases such as N2 are supplied to the processing chamber 201 from the gas supply pipes 310, 320, and 330, which serve as the SI raw material gas supply lines, the effect of removing residual SI raw material gas and other residual gases can be further improved.

[0153] (Supply of activated oxygen-containing gas: step S206)

[0154] In step S206, oxygen-containing gas is supplied from the gas supply pipe 320 of the gas supply system 302 into the buffer chamber 423 via the gas supply port 421 of the nozzle 420. At this time, high-frequency power is applied from the high-frequency power supply 270 between the rod-shaped electrodes 471 and 472 via the matching device 271. As a result, the oxygen-containing gas supplied into the buffer chamber 423 is excited by the plasma, supplied as an active species from the gas supply port 425 into the processing chamber 201, and discharged from the exhaust pipe 231. Furthermore, the flow rate of the oxygen-containing gas supplied into the buffer chamber 423 is adjusted by the mass flow controller 322.

[0155] Additionally, oxygen-containing gas is supplied to the buffer chamber 433 from the gas supply pipe 330 of the gas supply system 303 via the gas supply port 431 of the nozzle 430. At this time, high-frequency power is applied between the rod-shaped electrodes 481 and 482 from the high-frequency power supply 270 via the matching device 271. As a result, the oxygen-containing gas supplied to the buffer chamber 433 is excited by the plasma, supplied as an active species from the gas supply port 435 to the processing chamber 201, and discharged from the exhaust pipe 231. Furthermore, the flow rate of the oxygen-containing gas supplied to the buffer chamber 433 is adjusted by the mass flow controller 332.

[0156] Here, before supplying oxygen-containing gas to buffer chamber 423, valve 323 is closed and valve 622 is opened, through which oxygen-containing gas flows to vent pipe 620. Similarly, before supplying oxygen-containing gas to buffer chamber 433, valve 333 is closed and valve 632 is opened, through which oxygen-containing gas flows to vent pipe 630.

[0157] When supplying oxygen-containing gas to buffer chamber 423, valve 622 is closed and valve 323 is opened to supply oxygen-containing gas to gas supply pipe 320 downstream of valve 323, and valve 523 is opened to supply carrier gas (N2) from carrier gas supply pipe 520 to gas supply pipe 320. Furthermore, the flow rate of carrier gas (N2) is adjusted by mass flow controller 522. The oxygen-containing gas and carrier gas (N2) are combined and mixed in gas supply pipe 320 downstream of valve 323, and then supplied to buffer chamber 423 via nozzle 420.

[0158] When supplying oxygen-containing gas to buffer chamber 433, valve 632 is closed and valve 333 is opened to supply oxygen-containing gas to gas supply pipe 330 downstream of valve 333, and valve 533 is opened to supply carrier gas (N2) from carrier gas supply pipe 530 to gas supply pipe 330. The flow rate of carrier gas (N2) is adjusted by mass flow controller 532. Oxygen-containing gas and carrier gas (N2) are combined and mixed in gas supply pipe 330 downstream of valve 333 and supplied to buffer chamber 433 through nozzle 430.

[0159] When oxygen-containing gas is circulated as an active species through plasma excitation, the APC valve 243 is appropriately adjusted to set the pressure in the processing chamber 201 to a range of, for example, 500 Pa, within the range of 50 to 900 Pa. At this time, the supply flow rate of the oxygen-containing gas controlled by the mass flow controller 322 is, for example, a flow rate within the range of 2000 to 9000 sccm, for example, 6000 sccm. Similarly, the supply flow rate of the oxygen-containing gas controlled by the mass flow controller 332 is, for example, a flow rate within the range of 2000 to 9000 sccm, for example, 6000 sccm. Furthermore, the time for which the wafer 200 is exposed to the active species obtained through oxygen-containing gas plasma excitation, i.e., the gas supply time, is, a time within the range of, for example, 3 to 20 seconds, for example, 9 seconds.

[0160] Furthermore, the high-frequency power applied from the high-frequency power supply 270 to the rod-shaped electrodes 471 and 472 is, for example, in the range of 20 to 600 W, and is set to 200 W for example. Similarly, the high-frequency power applied from the high-frequency power supply 270 to the rod-shaped electrodes 481 and 482 is, for example, in the range of 20 to 600 W, and is set to 200 W for example. The high-frequency power can be supplied continuously or intermittently during the gas supply time. By intermittently exciting at the level of several μs, the electron temperature can be reduced, promoting the generation of negative ions. In addition, the heating power supply 250, which supplies power to the heater 207, is controlled to maintain the temperature inside the processing chamber 201 at 200°C or lower, more preferably at 100°C or lower, for example, at 100°C.

[0161] Regarding oxygen-containing gas, the reaction temperature is high when maintaining this state, and the reaction is difficult under the temperature and pressure conditions within the processing chamber 201 described above. Therefore, by exciting an oxygen-containing gas plasma and then allowing it to flow into the processing chamber 201 after the formation of active species, the temperature within the processing chamber 201 can be set to a low temperature range as described above. However, temperature changes within the processing chamber 201 take time; therefore, it is preferable that the temperature within the processing chamber 201 is the same as the temperature at which the Si raw material gas is supplied.

[0162] The active species generated in each buffer chamber 423, 433 are supplied to multiple processing spaces 215 within the crystal boat 217 along with the gas flow through multiple gas supply holes 425, 435. The gas flowing in the processing chamber 201 is a mixture of oxygen and N2, containing excited (metastable) O2 molecules, O atoms, and O2. +Ions and the like act as active species. At this time, no SI raw material gas flows in the processing chamber 201. Therefore, oxygen-containing gas does not cause a gas-phase reaction. Thus, the oxygen-containing gas, which becomes an active species or is activated, reacts with the silicon-containing layer, which is the first layer, formed on the wafer 200 in step S204. As a result, the silicon-containing layer is oxidized and modified into a silicon oxide layer (SiO layer), which is the second layer containing silicon (the first element) and oxygen (the second element).

[0163] Furthermore, when valve 513 is opened to allow N2 (inert gas) to flow from carrier gas supply pipe 510 to gas supply pipe 310, it prevents oxygen-containing gas from flowing back into nozzle 410 and gas supply pipe 310 on the SI raw material gas side. Moreover, because this is to prevent oxygen-containing gas from flowing back, the flow rate of N2 (inert gas) controlled by mass flow controller 512 can be small.

[0164] Furthermore, within each processing space 215 of the crystal boat 217, a sheath layer (ion sheath layer) is formed on the surface of the wafer 200 through the potential difference between the plasma space and the wafer 200. Through this sheath layer, active species (plasma active species) find it difficult to flow towards the wafer 200 side or to dissociate, thus potentially reducing the in-plane uniformity of the film deposited on the surface of the wafer 200. Alternatively, if the processing space 215 is too far from the plasma space, resulting in a low density of charged particles and undesirable homogenization of active species injection due to self-biasing, or if active species deactivation occurs, in-plane uniformity may also decrease.

[0165] As a countermeasure, in this embodiment, a DC bias voltage is applied to each of the multiple wafers 200 from the DC power supply 269 via the wafer boat rotation mechanism 267 and the wafer boat 217, thereby controlling the electric field of the sheath layer or its periphery formed on the surface of each wafer 200. Even if the back side of the wafer 200 is an insulator, a rotationally symmetrical bias electric field can be formed around the wafer 200 through the electrode plate 214, substantially imparting a bias voltage to the wafer 200. Specifically, the wafer boat 217 is conductive and electrically connected to the multiple wafers 200. The wafer boat 217 is electrically connected to the DC power supply 269 via the metal component 222 of the wafer boat support 218, the internal conductor 266 of the wafer boat rotation mechanism 267, and the collector ring 268.

[0166] In step S206, controller 280 controls DC power supply 269 to apply negative DC bias voltages to multiple wafers 200 via crystal boat rotation mechanism 267 and crystal boat 217. This creates an electric field between the sheath or buffer chambers 423, 433 formed on the surface of wafers 200 and wafers 200, promoting the injection of positive ions into wafers 200. Furthermore, the time for active species to reach wafers 200 is shortened, or the incident energy is increased. Conversely, when positive DC bias voltages are applied to multiple wafers 200, an electric field is created that promotes the injection of negative ions into wafers 200, and the sheath shrinks, bringing wafers 200 closer to or into contact with higher density plasma. Not only ions, but also electrically neutral plasma active species readily interact with the surface of wafers 200. As a result, the reaction between plasma active species and the silicon-containing layer on the surface of wafers 200 is promoted. At this point, the polarity and voltage of the DC bias can be selected to suppress the reduction in in-plane uniformity of the silicon oxide layer deposited on the surface of wafer 200.

[0167] (Residual gas removal: step S207)

[0168] In step S207, residual gases, such as unreacted or oxidized residual oxygen-containing gases, are removed from the processing chamber 201. Specifically, first, valve 323 of the gas supply pipe 320 is closed to stop the supply of oxygen-containing gas to the processing chamber 201, and valve 622 is opened to allow the oxygen-containing gas to flow into the vent pipe 620. Similarly, valve 333 of the gas supply pipe 330 is closed to stop the supply of oxygen-containing gas to the processing chamber 201, and valve 632 is opened to allow the oxygen-containing gas to flow into the vent pipe 630.

[0169] At this time, the APC valve 243 of the exhaust pipe 231 is fully opened, and the vacuum pump 246 exhausts the gas in the processing chamber 201 to below 20 Pa, thus removing residual oxygen-containing gases and other residual gases remaining in the processing chamber 201. If inert gases such as N2 are supplied to the processing chamber 201 from the gas supply pipes 310, 320, and 330, which serve as oxygen-containing gas supply lines, the effect of removing residual oxygen-containing gases and other residual gases is further improved.

[0170] Steps S204 to S207 are performed as a cycle, and by performing this cycle at least once (step S208), a silicon oxide film of a predetermined thickness is formed on the surface of wafer 200. The temperature and pressure within the processing chamber can be selected to limit the thickness of the adsorbed layer to approximately one molecule, or they can be selected to achieve either supply rate control or plasma-based reaction rate control.

[0171] Then, by simultaneously supplying inert gas such as N2 into the processing chamber 201 and venting the exhaust gas, the processing chamber 201 is purified using inert gas (gas purification: step S210). Furthermore, in the gas purification, it is preferable to repeatedly perform the following steps after removing residual gas: close APC valve 243 and open valves 513, 523, and 533 to supply inert gas such as N2 into the processing chamber 201; and with valves 513, 523, and 533 closed and the supply of inert gas such as N2 into the processing chamber 201 stopped, open APC valve 243 to perform vacuuming in the processing chamber 201.

[0172] Then, the rotation of the crystal boat 217 by the crystal boat rotation mechanism 267 is stopped. Then, valves 513, 523, and 533 are opened to replace the atmosphere in the processing chamber 201 with an inert gas such as N2 (inert gas replacement), restoring the pressure inside the processing chamber 201 to atmospheric pressure (atmospheric pressure restoration: step S212). Then, the sealing cover 219 is lowered by the crystal boat lifter 115, opening the opening at the lower end of the reaction tube 203, and the crystal boat 217 is moved out of the processing chamber 201 through the open opening (crystal boat unloading: step S214). Then, the opening at the lower end of the reaction tube 203 is closed by the furnace opening baffle 147. Then, the vacuum pump 246 is stopped. Then, the processed wafers 200 are removed from the crystal boat 217 (wafer unloading: step S216). Thus, one film deposition process (batch processing) is completed.

[0173] (Effect)

[0174] Next, the effects of this embodiment will be explained.

[0175] As described above, according to this embodiment, in step S206, the controller 280 controls the DC power supply 269 to apply DC bias voltages to the plurality of wafers 200 respectively via the crystal boat rotation mechanism 267 and the crystal boat 217. As a result, the sheath layer formed on the surface of the wafers 200 shrinks, and plasma-active seeds are easily introduced into the surface of the wafers 200 and become easier to dissociate. Consequently, the reaction between the plasma-active seeds and the silicon-containing layer on the surface of the wafers 200 is promoted. Therefore, the reduction in in-plane uniformity of the silicon oxide layer deposited on the surface of the wafers 200 is suppressed.

[0176] In addition, the DC power supply 269 is electrically connected to the internal conductor 266 of the crystal boat rotation mechanism 267 via a slip ring 268 through DC coupling. Through this slip ring 268, DC power can be stably supplied from the DC power supply 269 to the rotating internal conductor 266.

[0177] Furthermore, the crystal boat 217 is electrically connected to the internal conductor 266 via the metal component 222 of the crystal boat support platform 218. More specifically, the crystal boat support platform 218 has an insulating component 221 and a metal component 222. The lower surface of the base plate 210 of the crystal boat 217 is fixed to the upper surface 221U of the insulating component 221 in a mounted state. A contact portion 223 of the metal component 222 is provided inside the insulating component 221. The contact surface 223U of the contact portion 223 protrudes from the upper surface 221U of the insulating component 221 and contacts the lower surface of the base plate 210 of the crystal boat 217.

[0178] Here, the entire surface of the contact surface 223U of the contact portion 223 is covered by the lower surface of the base plate 210 of the crystal boat 217. The lower surface of the base plate 210 protects the contact surface 223U of the contact portion 223 from the influence of processing gases and plasmas.

[0179] Furthermore, the internal conductor 266 is disposed inside an insulating ceramic tube 266a. This insulating ceramic tube 266a protects the internal conductor 266 from the effects of processing gases and plasma.

[0180] (Modified Example)

[0181] Next, variations of the above-described embodiments will be described.

[0182] In the above embodiment, in step S206, for example, a positive DC bias voltage is applied to each of the plurality of wafers 200 from the DC power supply 269. However, the magnitude of the DC bias voltage applied to the plurality of wafers 200 from the DC power supply 269 can be appropriately varied depending on the state of the sheath layer (sheath voltage) formed on the surface of the wafer 200 or the thin film formed on the surface of the wafer 200. Therefore, for example, a negative DC bias voltage can also be applied to each of the plurality of wafers 200 from the DC power supply 269. In addition, not limited to a DC power supply, an AC power supply with a frequency lower than the excitation frequency and plasma vibration frequency of the high-frequency power supply 270 can also be used.

[0183] In the above embodiment, the wafer 200 is supported by the support groove 213 of the support pillar 212 in the boat 217. However, the wafer 200 may also be supported by pins protruding from the support pillar 212 or the electrode plate 214. Furthermore, the bias voltage is not limited to being applied by physical contact between the electrode plate 214 and the wafer 200; it can also be applied indirectly by an electric field generated around the electrode plate 214. Additionally, the electrode plate 214 is not limited to a ring shape; it can be formed into any shape such as a disk. By forming the electrode plate 214 into a disk shape that faces only near the center of the wafer 200 and has a smaller diameter than the wafer 200, plasma treatment of the film on the wafer 200 can be promoted within a desired range corresponding to the disk, improving in-plane uniformity. In this case, the support pillar 212 and the electrode plate are connected by conductive rods or the like.

[0184] Furthermore, in the above embodiment, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 are disposed inside the reaction tube 203. However, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 may also be disposed outside the reaction tube 203.

[0185] Furthermore, in the above embodiments, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 employ a soft plasma method with one of their rod-shaped electrodes grounded. However, a balanced power supply plasma method using ungrounded rod-shaped electrodes from both sides can also be employed.

[0186] Furthermore, in the above embodiment, two remote plasma generating structures, the first remote plasma generating structure 429 and the second remote plasma generating structure 439, are provided in the reaction tube 203. However, at least one remote plasma generating structure can be provided in the reaction tube 203.

[0187] Furthermore, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 of the above embodiments use oxygen-containing gas to generate a silicon oxide film on the surface of the wafer 200. However, the first remote plasma generating structure 429 and the second remote plasma generating structure 439 may also use nitrogen-containing gas to generate a silicon nitride film on the surface of the wafer 200.

[0188] Furthermore, in the above embodiments, as the Si raw material gas, for example, silane-based gases such as silane (SiH4), silane (Si2H6), and propane (Si3H8), monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), hexachlorosilane (Si2Cl6, abbreviated as HCDS), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) can be used. Additionally, as the raw material gas, for example, fluorosilane-based gases such as tetrafluorosilane (SiF4) and difluorosilane (SiH2F2), bromosilane-based gases such as tetrabromosilane (SiBr4) and dibromosilane (SiH2Br2), and iodosilane-based gases such as tetraiodosilane (SiI4) and diiodosilane (SiH2I2) can be used. In addition, as feedstock gases, for example, aminosilane-based gases such as tetra(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as 4DMAS), tri(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as 3DMAS), di(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as BDEAS), and bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as BTBAS) can be used. Additionally, as feedstock gases, for example, organic silane feedstock gases such as tetraethoxysilane (Si(OC2H5)4, abbreviated as TEOS) can be used. One or more of these can be used as feedstock gases. Furthermore, as oxygen-containing gases, for example, gases such as oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), water vapor (H2O), carbon monoxide (CO), and carbon dioxide (CO2) can be used. As oxygen-containing gases, more than one of them can be used.

[0189] Furthermore, in the above embodiment, N2 (nitrogen) is used as the carrier gas. However, in the above embodiment, He (helium), Ne (neon), Ar (argon), etc., can also be used instead of nitrogen. Among rare gases, He gas readily generates negative ions.

[0190] Furthermore, in the above embodiment, the crystal boat support 218 includes an insulating component 221 and a metal component 222. However, the crystal boat support 218 may also be entirely formed of metal. In this case, the DC bias voltage applied to the crystal boat support 218 can function as electro-corrosion prevention by cutting off stray currents flowing between the crystal boat support 218 and the atmosphere. For example, when cleaning the processing chamber 201 with halogen-based gases, corrosion of the crystal boat support 218 (metal component 222) and the rotating shaft 264 can be suppressed by a small negative bias voltage. At this time, it is desirable to remove the silicon carbide crystal boat, which is easily etched by halogen-based gases. That is, when the purpose is electro-corrosion prevention of the metal component, a conductive crystal boat is not necessary.

[0191] Symbol explanation:

[0192] 101—Substrate processing apparatus, 200—Wafer (substrate), 201—Processing chamber, 217—Crystal boat, 218—Crystal boat support stage, 221—Insulating component, 221U—Upper surface (upper surface of insulating component), 222—Metal component, 224U—Contact surface (contact surface of metal component), 265—Cylindrical rotating shaft, 266—Internal conductor, 268—Collector ring, 301—Processing gas supply system, 429—First remote plasma generating structure (remote plasma generating structure), 439—Second remote plasma generating structure (remote plasma generating structure).

Claims

1. A substrate processing method, characterized in that, It has the following processes: Multiple substrates are held in a processing chamber by holding at least a portion of a crystal boat that is conductive. Processing gas is supplied to the processing chamber from the processing gas supply system, and plasma is supplied to the processing chamber from the plasma generating structure to process the substrate; as well as The exhaust system exhausts air from the processing chamber. In the process of the described procedure, A rotation axis, which spans the inside and outside of the processing chamber and supports the crystal boat, allows the crystal boat to rotate. A crystal boat support platform located at the end of the rotating shaft supports the crystal boat via an insulating component on its upper surface, and an internal conductor located inside the rotating shaft is electrically connected to the crystal boat. A metal component located inside the insulating component electrically connects the crystal boat and the internal conductor via a contact surface that protrudes from the upper surface of the insulating component and contacts the crystal boat.

2. A substrate processing method, characterized in that, It has the following processes: Multiple substrates are held in a processing chamber by holding at least a portion of a crystal boat that is conductive. Processing gas is supplied to the processing chamber from the processing gas supply system, and plasma is supplied to the processing chamber from the plasma generating structure to process the substrate; as well as The exhaust system exhausts air from the processing chamber. In the process of the described procedure, Use a non-metallic crystal boat that is conductive at least in part of its surface. A rotation axis, which spans the inside and outside of the processing chamber and supports the crystal boat, allows the crystal boat to rotate. An internal conductor located inside the rotating shaft is electrically connected to the crystal boat. The crystal boat electrically connects the internal conductor and the plurality of substrates.

3. A substrate processing method, characterized in that, It has the following processes: Multiple substrates are held in a processing chamber by holding at least a portion of a crystal boat that is conductive. Processing gas is supplied to the processing chamber from a processing gas supply system, and plasma is supplied to the processing chamber from a plasma generating structure to process the substrate; and The exhaust system exhausts air from the processing chamber. In the process of the described procedure, A crystal boat is used, having the same number of electrode plates arranged in a ring-like horizontal orientation as the plurality of substrates being held. A rotation axis, which spans the inside and outside of the processing chamber and supports the crystal boat, allows the crystal boat to rotate. An internal conductor located inside the rotating shaft is electrically connected to the crystal boat.

4. The substrate processing method according to claim 3, characterized in that, The crystal boat has the plurality of substrates respectively mounted on the upper surface of the plurality of electrode plates.

5. A substrate processing method, characterized in that, It has the following processes: Multiple substrates are held in a processing chamber by holding at least a portion of a crystal boat that is conductive. Processing gas is supplied to the processing chamber from the processing gas supply system, and plasma is supplied to the processing chamber from the plasma generating structure to process the substrate; as well as The exhaust system exhausts air from the processing chamber. In the process of the described procedure, A rotation axis, which spans the inside and outside of the processing chamber and supports the crystal boat, allows the crystal boat to rotate. The plasma generating structure is intermittently excited by high-frequency electricity. An internal conductor located inside the rotating shaft is electrically connected to the crystal boat. A positive DC bias is applied to the plurality of substrates via the crystal boat.

6. The substrate processing method according to any one of claims 2, 3, and 5, characterized in that, The device includes a crystal boat support platform located at the end of the rotation shaft, which supports the crystal boat and electrically connects the crystal boat to the internal conductor. The crystal boat support platform has: An insulating component supporting the crystal boat on its upper surface; and Metal components located inside the insulating component, The metal component has a contact surface that protrudes from the upper surface of the insulating component and contacts the crystal boat, and electrically connects the crystal boat and the internal conductor.

7. The substrate processing method according to claim 6, characterized in that, The contact surface is configured to be covered by the bottom plate of the crystal boat.

8. The substrate processing method according to any one of claims 1 to 3 and 5, characterized in that, It includes a slip ring, which is located outside the processing room and electrically connects the internal conductor to the DC power supply. The rotating shaft is formed in a cylindrical shape, and an insulating porcelain tube is provided between the rotating shaft and the internal conductor.

9. The substrate processing method according to claim 6, characterized in that, The upper end of the inner conductor protrudes beyond the upper surface of the rotating shaft and contacts the metal component.

10. The substrate processing method according to any one of claims 1 to 3 and 5, characterized in that, The crystal boat is made of conductive silicon carbide.

11. The substrate processing method according to any one of claims 1 to 3 and 5, characterized in that, The plasma generating structure has multiple electrodes that extend vertically and are connected to a high-frequency power supply or ground, generating plasma from the lower to the upper part of the processing chamber.

12. The substrate processing method according to claim 11, characterized in that, It also includes a buffer chamber, which has opposing walls that face the plurality of substrates, forming a gas dispersion space. Three of the multiple electrodes are arranged in the buffer chamber.

13. The substrate processing method according to claim 12, characterized in that, The opposing wall is provided with a plurality of gas supply holes, which open corresponding to the processing space formed between adjacent substrates in the vertical direction.

14. The substrate processing method according to any one of claims 1 to 3 and 5, characterized in that, The internal conductor supplies a DC or AC bias voltage in the range of -10kV to 10kV.

15. A substrate processing apparatus, characterized in that, have: Processing room; A processing gas supply system that supplies processing gas to the processing chamber; A rotating shaft rotatably supports a crystal boat, which is conductive in at least a portion and holds multiple substrates within the processing chamber. A plasma generating structure that supplies plasma to the plurality of substrates within the processing chamber; An internal conductor, disposed inside the rotating shaft and electrically connected to the crystal boat; and A crystal boat support platform, located at the end of the rotation shaft, supports the crystal boat and electrically connects the crystal boat to the internal conductor. The crystal boat support platform has: An insulating component supporting the crystal boat on its upper surface; and Metal components located inside the insulating component, The metal component has a contact surface that protrudes from the upper surface of the insulating component and contacts the crystal boat, and electrically connects the crystal boat and the internal conductor.

16. A substrate processing apparatus, characterized in that, have: Processing room; A processing gas supply system that supplies processing gas to the processing chamber; A rotating shaft rotatably supports a crystal boat, which is conductive in at least a portion and holds multiple substrates within the processing chamber. A plasma generating structure that supplies plasma to the plurality of substrates within the processing chamber; as well as An internal conductor, located inside the rotating shaft and electrically connected to the crystal boat, The crystal boat is non-metallic, has conductivity at least a portion of its surface, and electrically connects the internal conductor and the plurality of substrates.

17. A substrate processing apparatus, characterized in that, have: Processing room; A processing gas supply system that supplies processing gas to the processing chamber; An exhaust system that vents air from the processing chamber; A plasma generating structure that supplies plasma into the processing chamber; A crystal boat, which is conductive in at least a portion and holds a plurality of substrates in the processing chamber; A rotating shaft that rotatably supports the crystal boat; and An internal conductor, located inside the rotating shaft and electrically connected to the crystal boat, The crystal boat has the same number of horizontally arranged electrode plates in a ring shape as the plurality of substrates held thereon.

18. A substrate processing apparatus, characterized in that, have: Processing room; A processing gas supply system that supplies processing gas to the processing chamber; A rotating shaft rotatably supports a crystal boat, which is conductive in at least a portion and holds multiple substrates within the processing chamber. A plasma generating structure that supplies plasma to the plurality of substrates within the processing chamber; as well as An internal conductor, located inside the rotating shaft and electrically connected to the crystal boat, The plasma generating structure is intermittently excited by high-frequency electricity, and a positive DC bias is applied to the plurality of substrates via the crystal boat.

19. A method for manufacturing a semiconductor device, characterized in that, The substrate processing method includes any one of claims 1 to 3 and 5.

20. A storage medium storing a program for controlling a board processing apparatus by operating on a computer, characterized in that, When the program is executed, it causes the computer to control the substrate processing apparatus to perform the substrate processing method according to any one of claims 1 to 3 and 5.

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