Film formation amount measuring apparatus and method, film forming apparatus and method, and method for manufacturing electronic device

Abstract

The present invention provides a film thickness measurement device, a film forming device, a film thickness measurement method, a film forming method, and a method for manufacturing an electronic device that can improve productivity. During a first period, the film thickness is measured using a first quartz oscillator. During the period from the end of the first period to the start of a second period, the measurement of the film thickness based on the first quartz oscillator is suspended. During the second period, the film thickness is measured using the first quartz oscillator. During a third period within the period from the end of the first period to the start of the second period, the film thickness is measured using a second quartz oscillator. During the second period, the measurement of the film thickness based on the first quartz oscillator is performed for a period longer than the first period.

Description

Technical Field

[0001] The present invention relates to a film thickness measurement device, a film forming device, a film thickness measurement method, a film forming method, and a method for manufacturing an electronic device for measuring the film thickness of film formation on an opposing substrate. Background Art

[0002] In a film forming device such as a vacuum evaporation device, in order to measure the film thickness of film formation on a substrate, a technique including a film thickness measurement device using a quartz oscillator is known. This film thickness measurement device is provided in a chamber in which a substrate and a film forming source (evaporation source, etc.) are arranged, and the film forming rate is obtained based on the natural vibration frequency. Thus, the film thickness of film formation on the substrate can be measured, and this natural vibration frequency changes according to the amount of film forming material attached to the quartz oscillator. Accordingly, by controlling the discharge amount of the film forming material from the film forming source, a thin film having a desired thickness can be formed on the substrate. In Patent Document 1, measuring the film thickness using a plurality of quartz oscillators in sequence is disclosed.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2020-23737 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] When starting to use a new quartz oscillator, it is considered that the measurement results are unstable for a period of time from the start of use. In addition, if the quartz oscillator used for measurement is frequently replaced, the consumption of the drive mechanism for replacing the quartz oscillator becomes faster. Therefore, the cost and time for maintaining the drive mechanism may increase.

[0008] An object of the present invention is to provide a film thickness measurement device, a film forming device, a film thickness measurement method, a film forming method, and a method for manufacturing an electronic device that can improve productivity.

[0009] Means for Solving the Problems

[0010] The film thickness measurement device of the present invention includes a plurality of quartz oscillators including at least a first quartz oscillator and a second quartz oscillator, and the film thickness is measured using the plurality of quartz oscillators in sequence. The film thickness measurement device is characterized in that

[0011] In a first period, the film thickness measurement using the first quartz oscillator is performed,

[0012] In the period from the end of the first period to the start of a second period, the film thickness measurement based on the first quartz oscillator is suspended,

[0013] During the second period, the film formation amount using the first quartz oscillator is measured.

[0014] During a third period from the end of the first period to the start of the second period, the film formation amount using the second quartz oscillator is measured.

[0015] During the second period, the measurement of the film formation amount based on the first quartz oscillator is performed for a period longer than the first period.

[0016] By adopting such a structure, the replacement frequency of the quartz oscillator used in the measurement of the film formation amount can be suppressed.

[0017] Advantages of the Invention

[0018] As described above, according to the present invention, the productivity can be improved. Description of the Drawings

[0019] Figure 1 It is a schematic structural diagram of a film forming apparatus.

[0020] Figure 2 It is a schematic structural diagram of a film formation amount measuring apparatus.

[0021] Figure 3 It is a top view of the main structure in the film formation amount measuring apparatus.

[0022] Figure 4 It is an explanatory diagram regarding the rate stabilization of the quartz oscillator.

[0023] Figure 5 It is a film forming process diagram in the film forming apparatus.

[0024] Figure 6 It is a film forming process diagram in the film forming apparatus.

[0025] Figure 7 It is a film forming process diagram in the film forming apparatus.

[0026] Figure 8 (a), (b) are explanatory diagrams of an organic EL display device.

[0027] Figure 9 It is a schematic structural diagram of a film forming apparatus.

[0028] Description of Reference Numerals

[0029] 1 Film forming apparatus 10 Chamber 100 Evaporation source 200 Film formation amount measuring apparatus 210 Apparatus main body 220 Monitoring head 221 Opening 222 Quartz oscillator 223 Quartz support 227 External resonator 230 Baffle 231 Opening 300 Control device Detailed Description of the Invention

[0030] Hereinafter, with reference to the accompanying drawings, exemplary embodiments for implementing the present invention will be described in detail. However, the dimensions, materials, shapes, relative configurations, etc. of the components described in this embodiment are not intended to limit the scope of the present invention thereto, unless otherwise specifically stated.

[0031] (Embodiment)

[0032] Refer to Figures 1 to 5 , a film formation amount measuring device, a film forming device, a film formation amount measuring method, and a film forming method according to an embodiment of the present invention will be described. The film forming device according to this embodiment is a vacuum evaporation device that forms a thin film on a substrate using an evaporation material.

[0033] <Film Forming Device>

[0034] Refer to Figure 1 , the film forming device according to this embodiment will be described. Figure 1 is a schematic structural diagram of the film forming device according to an embodiment of the present invention, and briefly shows the main structures in the film forming device.

[0035] The film forming device 1 includes: a chamber 10 configured to make the inside thereof in a near-vacuum state (reduced pressure environment) using a vacuum pump; and an evaporation source 100 as a film forming source, which is disposed inside the chamber 10. The evaporation source 100 functions to evaporate or sublime the material (film forming material (evaporation material)) of the substance to be evaporated onto the substrate S by heating the material. The substance evaporated or sublimated from the evaporation source 100 adheres to the film forming surface of the substrate S provided inside the chamber 10, and a thin film is formed on the substrate S. A mask M is disposed on the film forming surface side of the substrate S, and the mask M is formed with an opening matching the shape of the thin film to be formed. The film forming process (evaporation process) is performed in a state where the substrate S and the mask M are positioned.

[0036] The evaporation source 100 includes a container 110 such as a crucible for accommodating the film forming material T and a heating device 120 for heating the container 110. A nozzle portion 111 for discharging the evaporated or sublimated material is provided at the front end of the container 110. In addition, the film forming device 1 further includes a baffle 20 that switches between a state where the material discharged from the nozzle portion 111 can adhere to the substrate S and a state where the material does not adhere to the substrate S by blocking the material. It should be noted that, regarding the opening and closing mechanism of the baffle 20, a well-known technique can be appropriately adopted.

[0037] In addition, in the film forming apparatus 1, there is provided a film thickness measuring device 200 which is disposed inside the chamber 10 and is used to measure the film thickness of the film formed on the substrate S. The film thickness measuring device 200 includes a device main body 210, a monitoring head 220, and a baffle 230. Moreover, in the film thickness measuring device 200, a part of the material released from the evaporation source 100 is configured to adhere to the quartz oscillator 222 provided in the monitoring head 220. When the adhesion amount (film thickness) of the film forming material to the quartz oscillator 222 changes, the resonance frequency (natural vibration frequency) of the quartz oscillator 222 changes. By utilizing this property, the film thickness of the film formed on the substrate S can be measured, and the film formed on the substrate S can be made to have a desired film thickness. Regarding this point, a more specific description will be given.

[0038] The film forming apparatus 1 is provided with a control device 300. The control device 300 includes a first control unit 310 for controlling the evaporation source 100 and a second control unit 320 for controlling the film thickness measuring device 200. The second control unit 320 detects the resonance frequency of the quartz oscillator 222 and obtains the film thickness (film forming rate) per unit time for the quartz oscillator. It should be noted that, of course, the film thickness for the substrate S can be measured based on the film thickness for the quartz oscillator 222. As described above, when the film thickness (adhesion amount of the film forming material) for the quartz oscillator 222 exceeds a certain amount, the detection accuracy decreases, and a new quartz oscillator must be replaced. Therefore, in the film forming process for the substrate S, it is usually controlled such that the film is always formed on the substrate S, while the film is formed on the quartz oscillator intermittently. Therefore, the film thickness for the quartz oscillator 222 and the film thickness for the substrate S are not necessarily the same.

[0039] Moreover, in order to control the amount of the released material based on the obtained film forming rate, the control device 300 controls the heating temperature of the heating device 120 through the first control unit 310. In this way, by always measuring the film forming rate by the film thickness measuring device 200 and the control device 300, and controlling the heating temperature of the heating device 120 to control the film forming rate, a film with a desired thickness can be formed on the substrate S with high precision.

[0040] <Film Thickness Measuring Device>

[0041] Refer to Figure 2 and Figure 3 , the film thickness measuring device of the present embodiment will be described. Figure 2 is a schematic structural diagram of the film thickness measuring device of the present embodiment, which schematically shows the main structure of the film thickness measuring device through a schematic cross-sectional view or the like. In addition, Figure 3 is a top view of the main structure in the film thickness measuring device of the present embodiment, which shows a part of it in perspective. In Figure 3 , the components shown in perspective are represented by dashed lines.

[0042] Inside the monitoring head 220, a quartz holder 223 that holds a plurality of quartz oscillators 222 is provided. It should be noted that, in the present embodiment, the plurality of quartz oscillators 222 are arranged at equal intervals in the circumferential direction. The quartz holder 223 is configured to be rotatable by being fixed to the rotating shaft 224a of the servo motor 224 provided in the device main body 210. An opening 221 is provided at a part of the monitoring head 220. By rotating the quartz holder 223 with the servo motor 224, a specific quartz oscillator 222 is arranged at a position facing the opening 221, so that this quartz oscillator 222 can be used for measurement. That is, the film-forming material enters from the opening 221 and adheres to the quartz oscillator 222, so that the film-forming amount can be measured. In addition, it is configured that the film-forming material does not adhere to the quartz oscillators 222 not used in the measurement of the film-forming amount. In this way, the housing of the monitoring head 220 has an opening 221 at a position facing the quartz oscillator 222 used in the measurement of the film-forming amount, and has a function as a baffle to shield in such a way that the film-forming material does not adhere to the quartz oscillators 222 not used in the measurement of the film-forming amount.

[0043] A plurality of detected parts 225 are provided on the back side of the holding surface of the quartz oscillator 222 of the quartz holder 223, and a detection part 226 is provided in the device main body 210. Through these detection part 226 and the detected parts 225, the phase of the rotation position of the quartz holder 223 can be detected by the quartz holder control part 321 in the second control part 320, and the rotation of the quartz holder 223 can be controlled by the servo motor 224. It should be noted that the detection of the rotation position of the quartz holder 223 is not limited to such a structure, and various techniques such as a rotary encoder can be adopted.

[0044] The baffle 230 is configured to be rotatable by being fixed to the rotating shaft 232a of the servo motor 232 provided in the device main body 210. A trapezoidal slit-shaped opening 231 is provided at a part of the baffle 230. When this opening 231 overlaps with the opening 221 of the monitoring head 220, a specific quartz oscillator 222 is in an exposed state, and a part of the material discharged from the nozzle part 111 of the evaporation source 100 adheres to this quartz oscillator 222.

[0045] A plurality of detected parts 233 are provided on the baffle 230, and a detection part 234 is provided in the device main body 210. Through these detection part 234 and the detected parts 233, the phase of the rotation position of the baffle 230 can be detected by the baffle control part 323 in the second control part 320, and the rotation of the baffle 230 can be controlled by the servo motor 232. It should be noted that the detection of the rotation position of the baffle 230 is not limited to such a structure, and various techniques such as a rotary encoder can be adopted.

[0046] By rotating the baffle 230 configured as described above at a constant speed during film formation on the substrate S, the attachment of the film-forming material to the quartz oscillator 222 is intermittently performed, thereby suppressing the film formation amount on the quartz oscillator 222. Thereby, the life of the quartz oscillator 222 can be extended.

[0047] The quartz oscillator 222 is connected to the external resonator 227 via electrodes, coaxial cables, etc. The transmission signal generated by applying a voltage between the thin film of the film-forming material deposited on the surface of the quartz oscillator 222 and the electrode on the back surface is obtained as the resonance frequency (change amount) of the quartz oscillator 222 from the external resonator 227 by the film formation rate acquisition unit 322.

[0048] <Characteristics of Quartz Oscillator>

[0049] Regarding the characteristics of the quartz oscillator used to measure the film formation rate, the insights obtained based on empirical rules or experiments are described. It is difficult for a new quartz oscillator to adhere to the film-forming material, and the film formation rate is unstable during the initial period of film formation. In particular, this is significant when the film-forming material is Mg. Therefore, it cannot be used for measurement until the film formation rate stabilizes. Therefore, it is preferable to perform film formation preparatorily for a predetermined period before measurement. Moreover, the thicker the film thickness of the film-forming material attached to the quartz oscillator, the shorter the period required until the film formation rate stabilizes.

[0050] In addition, as described above, when the film formation amount on the quartz oscillator exceeds a certain amount, the detection accuracy decreases. Therefore, if the film formation amount during preparatory film formation is too large, not only the life of the quartz oscillator becomes short, but also the film-forming material is wasted. Therefore, it is preferable to set the film formation amount during preparatory film formation to the minimum required amount.

[0051] Moreover, the longer the period from the stop of film formation on the quartz oscillator to the restart of film formation (hereinafter, referred to as "pause period"), the longer the period from the restart of film formation to the stabilization of the film formation rate.

[0052] Based on the above insights, in Figure 4 a graph is shown schematically showing the relationship between the elapsed time and the period required until the film formation rate stabilizes. For ease of explanation, the graph is shown linearly, but in reality, it is a curved graph. In the figure, T is the period required until the film formation rate of a new quartz oscillator stabilizes. In addition, in the figure, t is the substrate replacement period, which is the period required to move the film-formed substrate from the film formation position and move a new substrate to the film formation position to enable film formation processing on the new substrate. In the graph, the solid line part is the graph during the period of film formation on the quartz oscillator, and the dotted line part is the graph during the period when film formation is not performed on the quartz oscillator.

[0053] As shown in the graph, when the film formation on the quartz oscillator is stopped at a time when R(<t) during the period required until the film formation rate becomes stable, and the film formation is restarted after the elapse of the pause period X, the period required until the film formation rate becomes stable is longer than the replacement period t. It should be noted that the "period required until the film formation rate becomes stable" may also be referred to as the "period required until the measurement result becomes stable". Therefore, after the substrate is placed at the film formation position and the preparation is completed, the quartz oscillator can only be used for measuring the film formation rate after the waiting period Z, and during this period, film formation on the substrate cannot be performed. In contrast, when the film formation on the quartz oscillator is stopped at a time when R during the period required until the film formation rate becomes stable, and the film formation is restarted before the elapse of the pause period Y, the period required until the film formation rate becomes stable is shorter than the replacement period t. Therefore, after the substrate is placed at the film formation position and the preparation is completed, the quartz oscillator can be immediately used for measuring the film formation rate, and thus, film formation on the substrate can be immediately performed after the substrate is placed at the film formation position and the preparation is completed.

[0054] <Film Formation Process of the Present Embodiment>

[0055] Refer to Figure 5 , and the film formation process in the film formation apparatus of the present embodiment will be described. Figure 5 is a film formation process diagram in the film formation apparatus of the present embodiment. Generally, in a film formation apparatus, a film is formed on a pre-determined number of substrates during one batch production period. Figure 5 The arrow A in [the figure] represents the production period of one batch, and the arrow B represents the film formation period for one substrate. The replacement period t is as described above. The film formation period B for one substrate and the replacement period t are always constant during the production period A of one batch. It should be noted that it is configured such that during the replacement period t, while the material continues to be discharged from the nozzle portion 111, by closing the baffle 20, the material does not fly to the position where the substrate S is placed. Even in the state where the baffle 20 is closed, it becomes a state where film formation can be performed on the quartz oscillator 222.

[0056] In the film formation amount measurement device 200 of the present embodiment, during production period A of a batch, n (n≥2) quartz oscillators are used for measuring the film formation amount. For the n quartz oscillators, for the sake of convenience of explanation, they are referred to as the first quartz oscillator, the second quartz oscillator,..., the nth quartz oscillator. Moreover, as an example of driving, it is configured to measure the film formation amount of the film formed on the substrate S based on the amount of the film forming material attached to each quartz oscillator in the order of the first to the nth quartz oscillator, and then repeatedly measure the film formation amount again in the order of the first to the nth quartz oscillator. It should be noted that this order can be appropriately changed. For example, after being used for measurement in the order of the first to the nth quartz oscillator, the order for the second measurement can be changed. In addition, some of the quartz oscillators can also be used only once without being used for the second time. The replacement of the quartz oscillator used for measurement is performed by rotating the quartz holder 223 by using the servo motor 224 to arrange the quartz oscillator 222 used for measurement at a position facing the opening 221 (refer to Figure 2 ). It should be noted that for the n quartz oscillators used for measurement, any one of the multiple quartz oscillators 222 provided on the quartz holder 223 can also be used. In addition, when replacing the quartz oscillator 222 used for measurement, it can be replaced only by rotating the quartz holder 223 in one direction (forward rotation), or it can be replaced by forward and reverse rotation. And, in order to continuously perform the measurement, it can also be configured to use multiple quartz oscillators for the measurement at the same time.

[0057] In the figure, the arrow C1 indicates the period during which the first quartz oscillator is used for measurement, the arrow C2 indicates the period during which the second quartz oscillator is used for measurement, and the arrow Cn indicates the period during which the nth quartz oscillator is used for measurement. The period during which the quartz oscillator is used for measurement is, for example, the period during which the quartz oscillator is arranged at the position for measurement (the position facing the opening 221). During this period, the measurement can be continuously performed using the quartz oscillator, or it can be intermittently performed. The portion indicated by the dotted line before the solid line part in the arrows C1, C2, Cn indicates the period from when the film formation starts after the quartz oscillator 222 is arranged at the position facing the opening 221 until before it is used for measurement. The period u1 in the figure is the period for replacing the quartz oscillator 222 used for measuring the film formation amount, and the period u2 is the period from when the film formation starts on the replaced quartz oscillator until it is used for measurement. It should be noted that the period u1 is sufficiently shorter than the period u2 and the replacement period t, so it can be ignored.

[0058] Here, in order to set t = u1 + u2 (≈ u2), it is necessary to replace the quartz oscillator 222 during the replacement period t, and the period required until the film formation rate becomes stable in the replaced quartz oscillator 222 is t or less. Therefore, for the first to nth quartz oscillators for measurement, a film-forming material is pre-attached before film formation on the substrate. That is, during the preparation period when the shutter 20 is closed, the film-forming material is released from the evaporation source 100, and film formation (precoating) is sequentially performed on the first to nth quartz oscillators.

[0059] After the precoating of the first to nth quartz oscillators is completed, film formation on the substrate S is started. As described above, during the production period A of one batch, film formation is sequentially performed on a predetermined number of substrates. During the production period A of one batch, the material is continuously released from the evaporation source 100. During film formation on the substrate S, the shutter 20 is opened, and during the replacement period t, the shutter 20 is in a closed state. Then, after using the first to nth quartz oscillators in this order for measuring the film formation amount, the measurement of the film formation amount is repeatedly performed again in the order of the first to nth quartz oscillators. In the present embodiment, as Figure 5 shown, for each quartz oscillator, the period used in the measurement of the film formation amount is longer in the second and subsequent uses than in the first use. In addition, for each quartz oscillator, the period of the first use is equal, and the period of the second use is also equal. It is preferable that the periods of the third and subsequent uses are also equal. Thereby, the lifetimes of the respective quartz oscillators can be made uniform. It should be noted that for all the quartz oscillators, it is not necessary for the periods of the second and subsequent uses to be longer than the period of the first use. The period of the first use and the periods of the second and subsequent uses of some of the quartz oscillators may be of the same length, or the periods of the second and subsequent uses of some of the quartz oscillators may be shorter than the period of the first use. For at least any one quartz oscillator, as long as the period of the second and subsequent uses is longer than the period of the first use, the use periods and use order of the other quartz oscillators can be arbitrary. In addition, the periods of the second use and the third and subsequent uses do not necessarily need to be equal.

[0060] In addition, as described above, in order to set t = u1 + u2 (≈ u2), it is necessary to replace the quartz oscillator 222 during the replacement period t, and the period required until the film formation rate becomes stable in the replaced quartz oscillator 222 is t or less. Therefore, from the time when a certain quartz oscillator (the Zth quartz oscillator) is used for measuring the film formation amount (from the stop of film formation on the quartz oscillator), the pause period until film formation on the Zth quartz oscillator is started again in order to use the Zth quartz oscillator for measuring the film formation amount needs to be set such that the period required until the film formation rate of film formation on the Zth quartz oscillator becomes stable when film formation on the Zth quartz oscillator is started after this pause period is shorter than the replacement period t.

[0061] Regarding this, further explanation is provided. As Figure 5 shown, the pause period of the first quartz oscillator is set as S1, the pause period of the second quartz oscillator is set as S2, ..., and the pause period of the n-th quartz oscillator is set as Sn. For example, for the first quartz oscillator, in order to measure the film deposition amount after the pause period S1, it is only necessary that the period from the moment of restarting film deposition on the first quartz oscillator until the film deposition rate stabilizes is shorter than the replacement period t. That is, as referred to Figure 4 and explained, at the moment of ending the initial measurement of the first quartz oscillator (the moment when film deposition on the first quartz oscillator stops), when the period required until the film deposition rate stabilizes is R, it is only necessary to satisfy S1 < Y. The same applies to S2, ..., Sn.

[0062] Figure 7 is a film deposition process diagram in the film deposition apparatus of the reference example. Usually, in the film deposition apparatus, a predetermined number of substrates are subjected to film deposition during one batch production. Figure 7 The arrow A in represents the production period of one batch, and the arrow B represents the film deposition period for one substrate. In order to switch from the substrate after film deposition to a new substrate, it is necessary to move the substrate after film deposition from the film deposition position and move the new substrate to the film deposition position, etc., so a certain period (substrate replacement period t) is required.

[0063] Regarding the quartz oscillator in the film deposition amount measuring device, when the adhesion amount of the film deposition material exceeds a certain amount, the detection accuracy decreases, so it is necessary to replace it with a new quartz oscillator. Therefore, usually, multiple quartz oscillators are used in one batch production. In Figure 7 as an example, the case of using three quartz oscillators (hereinafter referred to as the first quartz oscillator, the second quartz oscillator, and the third quartz oscillator) is shown. In the figure, the arrow C1 represents the period when the first quartz oscillator is used for measurement, the arrow C2 represents the period when the second quartz oscillator is used for measurement, and the arrow C3 represents the period when the third quartz oscillator is used for measurement. Since the film deposition rate is unstable to some extent if the film deposition material does not adhere to the quartz oscillator, it is used for measurement after a certain period from the start of adhesion (film deposition) of the film deposition material. Therefore, even if the second quartz oscillator is replaced after the measurement using the first quartz oscillator, it is necessary to perform the measurement based on the second quartz oscillator after a predetermined period T has elapsed since the start of film deposition on the second quartz oscillator. If this period T is longer than the above-mentioned substrate replacement period t, even if the new substrate is moved to the film deposition position and the preparation is completed, it is necessary to wait (T - t) before performing film deposition. Therefore, it becomes a cause of reduced productivity. In addition, the film deposition material is also wasted.

[0064] Therefore, a method of repeatedly using a plurality of quartz oscillators by shortening the period used in a single measurement based on a specific quartz oscillator is considered. In this case, after the second measurement, since the film-forming material has adhered to the quartz oscillator, the next quartz oscillator can be used for measurement in a short time. However, in this case, the consumption of the drive mechanism for replacing the quartz oscillator used for measurement becomes faster. Therefore, not only does the maintenance cost of the drive mechanism increase, but also the necessary period for maintenance becomes longer. Therefore, even if the productivity per batch can be increased, it is difficult to say that the productivity is high when considering multiple batches.

[0065] <Advantages of the film thickness measurement device and the film forming device of the present embodiment>

[0066] According to the film thickness measurement device and the film forming device of the present embodiment, even when replacing the quartz oscillator 222 used for measuring the film thickness, after the preparation is completed by arranging a new substrate S at the film forming position, the quartz oscillator 222 can be immediately used for measuring the film forming rate. Therefore, the productivity per batch can be increased. In addition, waste of the film-forming material can also be suppressed.

[0067] In addition, for each of the first to nth quartz oscillators, the period used in the measurement of the film thickness is longer for the second and subsequent uses than for the first use. Thereby, the replacement frequency of the quartz oscillator can be suppressed from becoming high. Therefore, the consumption of the drive mechanism for replacing the quartz oscillator can be reduced, and the period required for maintenance of the drive mechanism and the like can be suppressed from becoming long. In addition, the maintenance cost can also be reduced. Therefore, even when considering multiple batches, the productivity can be increased.

[0068] (Example)

[0069] In the above embodiment, if t = u1 + u2 (≈ u2) can be satisfied, then during the production period of one batch, the number n of the quartz oscillators 222 used for measuring the film thickness is not limited as long as it is 2 or more. Here, as an example, with reference to Figure 6 , the case of n = 3 will be described. In addition, in this example, the same quartz oscillator 222 is configured to be used for two measurements.

[0070] Figure 6 is a film forming process diagram in the film forming device of this example. As described in the above embodiment, arrow A represents the production period of one batch, and arrow B represents the film forming period for one substrate. Regarding t, u1, and u2, they are also as described in the embodiment.

[0071] In the film thickness measurement device 200 of the present embodiment, during production batch A, three quartz oscillators are used for film thickness measurement. For the three quartz oscillators, for the sake of convenience of explanation, they are referred to as the first quartz oscillator, the second quartz oscillator, and the third quartz oscillator. Moreover, it is configured such that, in the order of the first quartz oscillator, the second quartz oscillator, and the third quartz oscillator, after measuring the film thickness of the film formed on the substrate based on the amount of film-forming material attached to each quartz oscillator, the film thickness measurement is repeatedly performed again in the order of the first quartz oscillator, the second quartz oscillator, and the third quartz oscillator.

[0072] In the figure, arrow C1 indicates the period during which the first quartz oscillator is used for measurement, arrow C2 indicates the period during which the second quartz oscillator is used for measurement, and arrow C3 indicates the period during which the third quartz oscillator is used for measurement.

[0073] Moreover, in order to set t = u1 + u2 (≈u2), before film formation on the substrate S, pre-coating is sequentially performed on the first to third quartz oscillators. After the pre-coating of these quartz oscillators is completed, film formation on the substrate S is started. As described above, during production batch A, film formation is sequentially performed on a predetermined number of substrates. Moreover, after using the first to third quartz oscillators in this order for film thickness measurement, the film thickness measurement is repeatedly performed again in the order of the first to third quartz oscillators. In the present embodiment, for each quartz oscillator, the period used in film thickness measurement is longer in the second use than in the first use. In addition, for each quartz oscillator, the period of the first use is equal, and the period of the second use is also equal.

[0074] As shown in the figure, the pause period of the first quartz oscillator is set as S1, the pause period of the second quartz oscillator is set as S2, and the pause period of the third quartz oscillator is set as S3. For example, for the first quartz oscillator, in order to be used for film thickness measurement after passing through the pause period S1, it is only necessary that the period until the film formation rate becomes stable at the moment of restarting film formation on the first quartz oscillator is shorter than the replacement period t. That is, as described with reference to Figure 4 If, at the moment of ending the first measurement of the first quartz oscillator (the moment when film formation on the first quartz oscillator stops), the period required until the film formation rate becomes stable is R, it is only necessary to satisfy S1 < Y. The same applies to S2 and S3.

[0075] By adopting the film formation process as described above, the effects described in the above embodiment can be obtained.

[0076] As a modification example, it may also be that, for the first quartz oscillator among the multiple quartz oscillators, the period of use after the second time is longer than the period of the first use, and for the other quartz oscillators, all periods of use are equal.

[0077] <Method of manufacturing an electronic device>

[0078] An example of a method of manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, as an example of an electronic device, the structure of an organic EL display device will be shown, and a method of manufacturing an organic EL display device will be illustrated.

[0079] First, the manufactured organic EL display device will be described. Figure 8 (a) is an overall view of the organic EL display device 500, Figure 8 (b) shows a cross-sectional structure of one pixel.

[0080] As Figure 8 shown in (a), in the display area 501 of the organic EL display device 500, a plurality of pixels 502 each having a plurality of light emitting elements are arranged in a matrix. Each light emitting element has a structure in which an organic layer is sandwiched between a pair of electrodes, and the details will be described later. It should be noted that the pixel referred to here is the smallest unit capable of displaying a desired color in the display area 501. In the case of the organic EL display device of the present embodiment, the pixel 502 is composed of a combination of a first light emitting element 502R, a second light emitting element 502G, and a third light emitting element 502B that emit different lights. The pixel 502 is mostly composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may also be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, as long as it is at least one color or more, and there is no particular limitation.

[0081] Figure 8 (b) is Figure 8 a partial cross-sectional schematic view taken along the V-V line of (a). The pixel 502 is composed of a plurality of light emitting elements, and each light emitting element has a first electrode (anode) 504, a hole transport layer 505, any one of light emitting layers 506R, 506G, 506B, an electron transport layer 507, and a second electrode (cathode) 508 on a substrate 503. Among them, the hole transport layer 505, the light emitting layers 506R, 506G, 506B, and the electron transport layer 507 correspond to the organic layer. In addition, in the present embodiment, the light emitting layer 506R is an organic EL layer that emits red light, the light emitting layer 506G is an organic EL layer that emits green light, and the light emitting layer 506B is an organic EL layer that emits blue light. The light emitting layers 506R, 506G, 506B are respectively formed into patterns corresponding to light emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light.

[0082] In addition, the first electrode 504 is formed separately for each light-emitting element. The hole transport layer 505, the electron transport layer 507, and the second electrode 508 may be formed commonly for the plurality of light-emitting elements 502R, 502G, 502B, or may be formed for each light-emitting element. It should be noted that an insulating layer 509 is provided between the first electrodes 504 to prevent short-circuiting of the first electrode 504 and the second electrode 508 due to foreign matter. Further, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 510 is provided to protect the organic EL element from moisture and oxygen.

[0083] In Figure 8 (b), the hole transport layer 505 and the electron transport layer 507 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. Further, a hole injection layer may be formed between the first electrode 504 and the hole transport layer 505, and the hole injection layer has an energy band structure that enables smooth injection of holes from the first electrode 504 into the hole transport layer 505. Similarly, an electron injection layer may be formed between the second electrode 508 and the electron transport layer 507.

[0084] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0085] First, a substrate (mother glass) 503 on which a circuit (not shown) for driving the organic EL display device and the first electrode 504 are formed is prepared.

[0086] An acrylic resin is formed on the substrate 503 on which the first electrode 504 is formed by spin coating, and the acrylic resin is patterned by photolithography to form the insulating layer 509 in such a manner that an opening is formed in the portion where the first electrode 504 is formed. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0087] The substrate 503 on which the insulating layer 509 is patterned is placed on a substrate carrier on which an adhesive member is disposed. The substrate 503 is held by the adhesive member. It is fed into a first organic material film-forming apparatus, and after being turned over, the hole transport layer 505 is formed as a common layer on the first electrode 504 in the display region. The hole transport layer 505 is formed by vacuum evaporation. In practice, since the hole transport layer 505 is formed to be larger in size than the display region 501, a high-precision mask is not required.

[0088] Next, the substrate 503 on which the hole transport layer 505 is formed is fed into a second organic material film-forming apparatus. Alignment between the substrate and the mask is performed, the substrate is placed on the mask, and a light-emitting layer 506R that emits red light is formed in the portion of the substrate 503 where the element that emits red light is disposed.

[0089] Similar to the film formation of the light-emitting layer 506R, the light-emitting layer 506G that emits green light is formed using the third organic material film-forming apparatus, and then the light-emitting layer 506B that emits blue light is formed using the fourth organic material film-forming apparatus. After the film formation of the light-emitting layers 506R, 506G, and 506B is completed, the electron transport layer 507 is formed over the entire display region 501 using the fifth film-forming apparatus. The electron transport layer 507 is formed as a shared layer for the three-color light-emitting layers 506R, 506G, and 506B.

[0090] The substrate formed up to the electron transport layer 507 is moved in the metallic vapor deposition material film-forming apparatus to form the second electrode 508.

[0091] After that, it is moved to the plasma CVD apparatus to form the protective layer 510, completing the film-forming process for the substrate 503. After flipping, the substrate 503 is separated from the substrate carrier by peeling off the bonding member from the substrate 503. After that, the organic EL display device 500 is completed through cutting.

[0092] From when the substrate 503 patterned with the insulating layer 509 is fed into the film-forming apparatus until the film formation of the protective layer 510 is completed, if it is exposed to an environment containing moisture and oxygen, the light-emitting layer made of the organic EL material may deteriorate due to moisture and oxygen. Therefore, the feeding and discharging of the substrate between the film-forming apparatuses are performed in a vacuum environment or an inert gas environment.

[0093] (Other)

[0094] In the above-described embodiment, the case where the film-forming source is an evaporation source has been described. However, the film-forming source may also be a sputtering cathode for film formation by sputtering.

[0095] In addition, in the above-described embodiment, the structure in which the evaporation source 100 and the film thickness measurement device 200 are fixed inside the chamber 10 has been shown. Generally, in an in-line film-forming apparatus, such a structure is adopted. In the case of such a structure, the baffle 20 is provided so that the film-forming material does not fly to the position where the substrate S is disposed when the substrate S is replaced or the like, and the film-forming material can be attached to the quartz oscillator 222 provided in the film thickness measurement device 200.

[0096] On the other hand, in a cluster-type film-forming apparatus, the evaporation source as the film-forming source is configured to be movable, and in a state where the evaporation source stands by at a predetermined standby position, the film-forming material released from the evaporation source does not fly to the position where the substrate is disposed. Therefore, the baffle 20 as described above is not required. This will be described with reference to Figure 9 is described. Figure 9 is a schematic structural diagram of a film-forming apparatus according to another embodiment of the present invention, schematically showing the main structures in the film-forming apparatus.

[0097] The film forming apparatus 1X includes: a chamber 10 configured to make the inside thereof in a nearly vacuum state (reduced pressure environment) using a vacuum pump; and an evaporation source 100X as a film forming source, which is disposed inside the chamber 10. Regarding the structure of the evaporation source 100X, since it is the same as the evaporation source 100 in the above-described embodiment, the description thereof is omitted. In the present embodiment, the evaporation source 100X is configured to be reciprocally movable along an orbit 150. As Figure 9 shown, when the evaporation source 100X is in the standby position on the right side in the figure, even if the film forming material is released from the evaporation source 100X, the film forming material does not adhere to the substrate S. Further, when film forming is performed on the substrate S via a mask M, it is configured to perform film forming while moving the evaporation source 100X along the orbit 150. It should be noted that a shutter 130 is provided in the evaporation source 100X and is configured to be able to switch between releasing and blocking the film forming material from the evaporation source 100X.

[0098] Moreover, in the present embodiment, a film forming amount measuring device 200X is fixed to the evaporation source 100X. Accordingly, the film forming amount measuring device 200X moves together with the evaporation source 100X. It should be noted that regarding the structure of the film forming amount measuring device 200X, since it is the same as the film forming amount measuring device 200 in the above-described embodiment, the description thereof is omitted. With the above-described structure, not to mention during film forming, even in a state where the evaporation source 100X is on standby at the standby position, the film forming material can adhere to a quartz oscillator 222 included in the film forming amount measuring device 200X (not Figure 9 shown in the figure). In the film forming apparatus 1X configured as described above, the film forming amount measuring method and the film forming method shown in the above-described embodiment can also be applied, and the same effects as those in the above-described embodiment can be obtained.

Claims

1. A control device for a film thickness measurement device, comprising a control unit for controlling the film thickness measurement device, the film thickness measurement device being configured to sequentially use a plurality of quartz oscillators including at least a first quartz oscillator and a second quartz oscillator to measure the film thickness of film formation on a substrate from a film formation source in a reduced pressure environment in a film formation device, the control device for the film thickness measurement device being characterized in that, the film thickness measurement device includes the plurality of quartz oscillators and is configured such that by controlling the film thickness measurement device by the control unit, the quartz oscillator used for measurement can be changed, the control unit is configured to: in a first period, in order to sequentially measure the film thickness of film formation on a plurality of substrates using the first quartz oscillator, control the film thickness measurement device so that a film formation material adheres to the first quartz oscillator, in the period from the end of the first period until the start of a second period that is longer than the first period, in order to suspend the measurement of the film thickness based on the first quartz oscillator, control the film thickness measurement device so that the film formation material does not adhere to the first quartz oscillator, in a third period within the period from the end of the first period until the start of the second period, in order to sequentially measure the film thickness of film formation on a plurality of substrates using the second quartz oscillator, control the film thickness measurement device so that a film formation material adheres to the second quartz oscillator, in the second period, in order to sequentially measure the film thickness of film formation on a plurality of substrates using the first quartz oscillator, control the film thickness measurement device so that a film formation material adheres to the first quartz oscillator, in the measurement of the film thickness of film formation on the first substrate in the second period using the first quartz oscillator, set a pause period for suspending the measurement of the film thickness using the first quartz oscillator in such a manner that the period required until the measurement result stabilizes is shorter than the period required for replacement of the first substrate.

2. The control device for a film thickness measurement device according to claim 1, characterized in that, the control unit is configured to: in the period from the end of the third period until the start of a fourth period, in order to suspend the measurement of the film thickness based on the second quartz oscillator, control the film thickness measurement device so that the film formation material does not adhere to the second quartz oscillator, in the fourth period that is longer than the third period, in order to sequentially measure the film thickness of film formation on a plurality of substrates using the second quartz oscillator, control the film thickness measurement device so that a film formation material adheres to the second quartz oscillator.

3. The control device for a film thickness measurement device according to claim 2, characterized in that, the fourth period at least includes the period after the end of the second period.

4. The control device for a film thickness measurement device according to claim 2, characterized in that, the fourth period at least includes the period before the start of the second period.

5. The control device for a film thickness measurement device according to any one of claims 2 to 4, characterized in that, the length of the first period is equal to the length of the third period, The length of the second period is equal to the length of the fourth period.

6. The control device of the film formation amount measuring device according to any one of claims 1 to 4, characterized in that the control unit is configured to during the period from the end of the first period to the start of the second period, in order to sequentially measure the film formation amounts of film formation on a plurality of substrates using a quartz oscillator different from the first quartz oscillator and the second quartz oscillator among the plurality of quartz oscillators, control the film formation amount measuring device so that the film forming material adheres to the different quartz oscillators.

7. The control device of the film formation amount measuring device according to any one of claims 1 to 4, characterized in that the film formation amount measuring device includes a baffle having an opening, the baffle exposes the quartz oscillator used for measuring the film formation amount among the plurality of quartz oscillators from the opening with respect to the film forming source, and shields the quartz oscillator for which the measurement is paused among the plurality of quartz oscillators with respect to the film forming source.

8. The control device of the film formation amount measuring device according to any one of claims 1 to 4, characterized in that before the measurement of the film formation amount, a film forming material is pre-attached to the plurality of quartz oscillators.

9. The control device of the film formation amount measuring device according to any one of claims 1 to 4, characterized in that the replacement periods of the substrates to be film-formed are all set to be equal, the replacement of the quartz oscillator used for the measurement of the film formation amount by the film formation amount measuring device is performed between the replacement periods.

10. A film forming apparatus, characterized in that, The film forming device includes: a film forming source for film-forming on a substrate; and the control device of the film formation amount measuring device according to any one of claims 1 to 9.

11. A film formation amount measuring method, which sequentially uses a plurality of quartz oscillators including at least a first quartz oscillator and a second quartz oscillator to measure the film formation amount of film formation on a substrate by a film forming source in a reduced-pressure environment in a film forming device, the film formation amount measuring method being characterized in that in a first period, the film formation amount of film formation on a plurality of substrates using the first quartz oscillator is measured, during the period from the end of the first period to the start of a second period that is longer than the first period, the measurement of the film formation amount based on the first quartz oscillator is paused, in a third period during the period from the end of the first period to the start of the second period, at least the film formation amount of film formation on a plurality of substrates using the second quartz oscillator is measured, in the second period, the film formation amount of film formation on a plurality of substrates using the first quartz oscillator is measured, in the measurement of the film formation amount of film formation on the first substrate in the second period using the first quartz oscillator, a pause period for pausing the measurement of the film formation amount using the first quartz oscillator is set in such a manner that the period required until the measurement result becomes stable is shorter than the period required for the replacement of the first substrate.

12. A film-forming method, characterized in that, The film forming method includes: a step of measuring the film formation amount by the film formation amount measuring method according to claim 11; and a step of film-forming on a substrate.

13. A manufacturing method of an electronic device, characterized in that, An electronic device is manufactured by the film forming method according to claim 12.

Images