System, method and program product for manufacturing a photomask

Abstract

Methods and systems for constructing a photomask from obtained pattern information related to a photomask exhibiting defects on a wafer. The pattern information is analyzed in the spatial domain so that a correction photomask structure can be generated and applied to the photomask layout. The photomask is constructed using the correction photomask structure. The photomask is verified for effectiveness.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit and priority of U.S. Provisional Patent Application No. 63 / 018,471, filed April 30, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention generally relates to systems and methods for manufacturing photomasks for fabricating integrated circuits on silicon wafers. Background Technology

[0004] Mask technology is crucial for the development of advanced integrated circuit technology nodes used in logic and memory processes. In particular, masks are heavily relied upon to achieve adequate process windows (PW) and final yield when challenging the traditional limitations of optical lithography and EUV lithography. As linewidths of each new generation of advanced integrated circuit technologies become increasingly smaller, mask manufacturing constraints present technical challenges regarding how to maximize the accuracy and consistency of manufactured masks. Wafer verification of mask process improvements can be extremely difficult and time-consuming under conditions of full-capacity production lines and levels of investment supporting wafer characterization. Therefore, a more efficient and effective approach to providing pattern fidelity enhancement solutions would be useful for both mask manufacturers and wafer lithography companies, where pattern fidelity includes, but is not limited to, critical dimensional uniformity (CDU - global and local, corner rounding, H / V bias, reproduction of complex 2D patterns, LER, enhanced resolution, etc.).

[0005] Currently, toolkits of mask and wafer analysis techniques in lithography-aware LAMA applications can predict wafer defect rates in both one-dimensional (1D) and two-dimensional (2D) structures, such as those found in metals, contacts, and polysilicon, and optimize mask processes to enhance pattern fidelity performance. For example, contact hole area loss, corner rounding (CR), and xy errors caused by mask processes on asymmetric holes present technical challenges in optimizing for the required capabilities. Furthermore, sub-resolution auxiliary features (SRAF) present further technical challenges that can be addressed using this technique. Solving these mask-related problems presents significant technical challenges, especially when seeking to extend process capabilities using previous-generation equipment. A mask development process that overcomes these technical challenges is needed.

[0006] Furthermore, as IC technology nodes advance and the demands on mask performance increase, conventional tools (such as single-beam write tools) may no longer provide the expected results that meet these higher standards. At the same time, these conventional tools are not necessarily obsolete for other purposes. Therefore, there is a need to extend the capabilities of conventional tools to allow their use in higher mask performance domains, such as in the EUVL domain.

[0007] What is needed is a system and a method that can be used to develop photomasks that can overcome the aforementioned problems. Summary of the Invention

[0008] This invention addresses the challenge of achieving enhanced pattern fidelity for integrated circuit yield in EUVL and optical lithography through novel and improved computer systems and methods for fabricating photomasks using Lithography-Aware Mask Process Correction Application (LAMA) technology. As described below, LAMA is a multi-step data stream in which mask process LAMA fidelity is coordinated with wafer processes to enhance lithography performance and yield patterning. In embodiments of LAMA technology, a standard LAMA pattern is designed based on spatial domain analysis of pre-existing photomask data and / or contour extraction analysis of SEM images of a constructed mask. The designed standard LAMA pattern, consisting of corrected photomask structures, is then incorporated into the mask. In embodiments, design rule checking and / or pattern matching software is used to determine which structures are present in the mask data, and spatial domain analysis is used to quantify defects in those structures. This spatial domain analysis includes, but is not limited to, descriptive pattern search, feature statistical analysis, and design density mapping. Structures that can benefit from LAMA are thus identified. To obtain the mask-level data required to determine the optimal correction method for the mask structure, an initial mask is constructed. Based on this, the LAMA correction script will be applied to subsequent mask data generation. The final mask is then constructed with LAMA applied. LAMA correction can be applied during mask process correction, OPC, or any other mask preparation step to generate mask data to be used in production.

[0009] In an embodiment, a method for manufacturing a photomask includes: (a) detecting wafer defects from a scanning electron microscope (SEM) image of a wafer; (b) extracting a plurality of mask contours from an SEM image of a previously manufactured photomask, wherein the extracted mask contours may correspond to the detected wafer defects; (c) generating a simulated manufactured wafer using the extracted plurality of mask contours; (d) detecting one or more defects on the simulated manufactured wafer; (e) determining one or more problematic regions of the photomask based on the defects on the simulated manufactured wafer; and (f) obtaining a pattern associated with the problematic regions of the previously manufactured photomask. Information; (g) Performing spatial domain analysis of the pattern information; (h) Determining multiple photomask structure patterns based on the spatial domain analysis, the multiple photomask structure patterns displaying one or more corresponding defects; (i) Generating multiple potential correction photomask structure patterns from the multiple photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, selecting multiple parameters corresponding to that process; and (iii) Assigning multiple correction photomask structure patterns with the selected parameters to the multiple correction photomask structure patterns. The selected processing is applied to multiple photomask structure patterns that display one or more corresponding defects; (j) incorporating potential correction photomask structure patterns into a test photomask; (k) analyzing potential correction photomask structure patterns on the test photomask; (l) selecting multiple correction photomask structure patterns from the multiple potential correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the multiple correction photomask structure patterns on the test photomask; (n) executing one or more photomask pattern correction scripts to incorporate one of the multiple correction photomask structure patterns. (o) Constructing a photomask for a whole layer based on the final photomask layout, wherein one or more of the multiple correction photomask structure patterns have been incorporated into the photomask for a whole layer; (p) Confirming that one or more correction photomask structures have been applied to the final photomask; and (q) Determining that multiple locations on the wafer produced based on the photomask do not show defects corresponding to one or more defects of the previously manufactured photomask, wherein one or more of the multiple correction photomask structure patterns have been incorporated into the photomask.

[0010] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0011] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a graphic corresponding to the identified photomask structure. In an embodiment, multiple photomask structure patterns are identified based on the graphic corresponding to the identified photomask structure, the multiple photomask structure patterns displaying one or more corresponding defects.

[0012] In an embodiment, analyzing the corrected photomask structure pattern on the test photomask includes: (i) performing a manufacturing simulation process based on the photomask; and (ii) evaluating the results of the manufacturing simulation process.

[0013] In one embodiment, a potential correction photomask structure pattern is incorporated into unused space on the fabricated photomask.

[0014] In an embodiment, a method for manufacturing a photomask includes: (a) detecting wafer defects from a scanning electron microscope (SEM) image of a wafer; (b) extracting a plurality of mask contours from an SEM image of a previously manufactured photomask, wherein the extracted mask contours correspond to the detected wafer defects; (c) generating a simulated manufactured wafer using the extracted plurality of mask contours; (d) detecting one or more defects on the simulated manufactured wafer; (e) determining one or more problem regions of the previously manufactured photomask based on the defects on the simulated manufactured wafer; (f) obtaining pattern information associated with the problem regions of the previously manufactured photomask; (g) performing spatial domain analysis of the pattern information; (h) determining a plurality of photomask structure patterns based on the spatial domain analysis, the plurality of photomask structure patterns displaying one or more corresponding defects; and (i) generating a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) selecting a plurality of processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects. (i) Selecting a plurality of parameters corresponding to the selected process for each selected process; (ii) Applying the selected process with the selected parameters to a plurality of photomask structure patterns that display one or more corresponding defects; (j) Generating one or more photomask pattern correction scripts based on the plurality of correction photomask structure patterns; (k) Executing one or more photomask pattern correction scripts to apply one or more of the plurality of correction photomask structure patterns to a photomask layout; (l) Constructing a photomask based on a final photomask layout of a layer in which one or more of the plurality of correction photomask structure patterns have been incorporated; (m) Confirming that one or more correction photomask structures have been applied to the photomask; and (n) Determining that a plurality of locations on the wafer produced based on the photomask do not display defects corresponding to one or more defects of a previously manufactured photomask in which one or more of the plurality of correction photomask structure patterns have been incorporated.

[0015] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0016] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a pattern corresponding to the identified photomask structure. In an embodiment, multiple photomask structure patterns are identified based on the pattern corresponding to the identified photomask structure, the multiple photomask structure patterns displaying a plurality of corresponding defects.

[0017] In one embodiment, the corrected photomask structure pattern is incorporated into the unused space on a previously manufactured photomask.

[0018] In one embodiment, a system for manufacturing a photomask includes: one or more processing units; and a memory, wherein the one or more processing units are configured to execute machine-readable instructions that, when executed, cause the system to: (a) detect wafer defects from a scanning electron microscope (SEM) image of a wafer; (b) extract a plurality of mask contours from an SEM image of a previously manufactured photomask, wherein the extracted mask contours correspond to the detected wafer defects; (c) generate a simulated manufactured wafer using the extracted plurality of mask contours; (d) detect one or more defects on the simulated manufactured wafer; and (e) determine the defects based on the defects on the simulated manufactured wafer. (f) Obtaining pattern information related to the problematic areas of a previously fabricated photomask; (g) Performing spatial domain analysis of the pattern information; (h) Determining multiple photomask structure patterns based on the spatial domain analysis, the multiple photomask structure patterns displaying one or more corresponding defects; (i) Generating multiple potential corrective photomask structure patterns from the multiple photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, selecting a corresponding... The process includes multiple parameters; (iii) applying the selected process with the selected parameters to multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; (j) incorporating potential correction photomask structure patterns into a test photomask; (k) analyzing potential correction photomask structure patterns on the test photomask; (l) selecting multiple correction photomask structure patterns from the multiple potential correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the multiple correction photomask structure patterns on the test photomask; (n) executing one or more photomask pattern correction scripts to incorporate the multiple correction photomask structure patterns into the test photomask. One or more correction photomask structure patterns are applied to a final photomask layout for an entire layer; (o) a photomask for an entire layer is constructed based on the final photomask layout, wherein one or more correction photomask structure patterns are incorporated into the photomask for the entire layer; (p) one or more correction photomask structures are confirmed to have been applied to the final photomask; and (q) multiple locations on the wafer produced based on the photomask do not show defects corresponding to one or more defects of a previously manufactured photomask, wherein one or more correction photomask structure patterns are incorporated into the photomask.

[0019] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0020] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a graphic corresponding to the identified photomask structure. In an embodiment, based on the graphic corresponding to the identified photomask structure, multiple photomask structure patterns are identified, the multiple photomask structure patterns displaying one or more corresponding defects.

[0021] In an embodiment, analyzing the corrected photomask structure pattern on the test photomask includes: (i) performing a manufacturing simulation process based on the test photomask; and (ii) visually inspecting the results of the manufacturing simulation process.

[0022] In one embodiment, the potential correction photomask structure pattern is incorporated into the unused space on a previously manufactured photomask.

[0023] In an embodiment, a system for manufacturing photomasks includes: one or more processing units; and a memory, wherein the one or more processing units are configured to execute machine-readable instructions that, when executed, cause the system to: (a) detect wafer defects from a scanning electron microscope (SEM) image of a wafer; (b) extract a plurality of mask contours from an SEM image of a previously manufactured photomask, wherein the extracted mask contours correspond to the detected wafer defects; (c) generate a simulated manufactured wafer using the extracted plurality of mask contours; (d) detect one or more defects on the simulated manufactured wafer; (e) determine one or more problem regions of the previously manufactured photomask based on the defects on the simulated manufactured wafer; (f) obtain pattern information associated with the problem regions of the previously manufactured photomask; (g) perform spatial domain analysis of the pattern information; (h) determine a plurality of photomask structure patterns based on the spatial domain analysis, the plurality of photomask structure patterns displaying one or more corresponding defects; (i) generate a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, wherein generation includes: (i) selecting to apply to the plurality of photomask structure patterns. (ii) performing multiple processes on a photomask structure pattern, wherein the multiple photomask structure patterns display one or more corresponding defects; and (iii) for each selected process, selecting multiple parameters corresponding to that process; and (iv) applying the selected process with the selected parameters to the multiple photomask structure patterns, wherein the multiple photomask structure patterns display one or more corresponding defects; (j) generating one or more photomask pattern correction scripts based on multiple corrected photomask structure patterns; (k) executing one or more photomask pattern correction scripts to apply one or more corrected photomask structure patterns from the multiple corrected photomask structure patterns to a photomask layout; (l) constructing a photomask based on a final photomask layout of a layer, wherein one or more corrected photomask structure patterns from the multiple corrected photomask structure patterns have been incorporated into the photomask; (m) confirming that one or more corrected photomask structure patterns have been applied to the photomask; and (n) determining that multiple locations on a wafer produced based on the photomask do not display defects corresponding to one or more defects of a previously manufactured photomask, wherein one or more corrected photomask structure patterns from the multiple corrected photomask structure patterns have been incorporated into the photomask.

[0024] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0025] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a graphic corresponding to the identified photomask structure. In an embodiment, multiple photomask structure patterns are identified based on the graphic corresponding to the identified photomask structure, the multiple photomask structure patterns displaying one or more corresponding defects.

[0026] In one embodiment, the corrected photomask structure pattern is incorporated into the unused space on a previously manufactured photomask.

[0027] In one embodiment, a mask design correction system includes one or more computer systems, each computer system including one or more processors and multiple modules, the one or more processors being operatively connected to one or more memory devices, the multiple modules being stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the multiple modules including: (a) a scanning module configured to: (1) scan a first scanning electron microscope (SEM) image of a layer in a wafer; (2) detect wafer defects from the first SEM image of the wafer; and (3) output the location of the wafer defect on the wafer; (b) a contour extraction module operatively connected to... The scanning module is configured to: (1) obtain the location of a wafer defect on the wafer; and (2) extract a plurality of mask contours from a second SEM image of a previously manufactured photomask associated with the layer in the wafer, wherein the extracted mask contours correspond to the location of a detected wafer defect on the previously manufactured photomask corresponding to the wafer; (c) a simulation module operatively connected to the contour extraction module and configured to: (1) obtain the plurality of extracted mask contours; and (2) generate a simulated wafer using the plurality of extracted mask contours; and (d) an inspection module operatively connected to the simulation module and configured to: (1) obtain the simulated wafer; and (2) inspect the simulated wafer. (e) A photomask analysis module, operatively connected to the detection module and configured to: (1) obtain data including defects on a simulated wafer; (2) determine one or more problematic regions of a previously manufactured photomask based on the data including defects on a simulated wafer; and (3) generate pattern information related to the problematic regions of the previously manufactured photomask; (f) A spatial domain analysis module, operatively connected to the photomask analysis module and configured to: (1) obtain pattern information related to the problematic regions of the previously manufactured photomask; (2) perform spatial domain analysis on the pattern information. Analysis; and (3) output the results of spatial domain analysis; (g) a pattern recognition module, which is operatively connected to the spatial domain analysis module and configured to: (1) obtain the results of spatial domain analysis; (2) determine multiple photomask structure patterns based on the results of spatial domain analysis, the multiple photomask structure patterns displaying one or more corresponding defects; (3) output data corresponding to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; (h) a pattern generation module, which is operatively connected to the pattern recognition module and configured to: (1) obtain data corresponding to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects;(2) Select multiple processes to be applied to multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; and (3) for each selected process, select multiple parameters corresponding to that process; (4) apply the selected process with the selected parameters to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; (5) generate multiple potential correction photomask structure patterns from the multiple photomask structure patterns based on spatial domain analysis; (6) incorporate the potential correction photomask structure patterns into the test photomask; (7) analyze (7) Test potential correction photomask structure patterns on a photomask; (8) Select and output multiple correction photomask structure patterns from multiple potential correction photomask structure patterns; and (i) a script module operatively connected to the pattern selection module and configured to: (1) obtain multiple correction photomask structure patterns; (2) generate one or more photomask pattern correction scripts based on the multiple correction photomask structure patterns; and (3) execute one or more photomask pattern correction scripts to apply one or more correction photomask structure patterns from the multiple correction photomask structure patterns to the photomask layout.

[0028] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0029] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a graphic corresponding to the identified photomask structure. In an embodiment, multiple photomask structure patterns are identified based on the graphic corresponding to the identified photomask structure, the multiple photomask structure patterns displaying one or more corresponding defects.

[0030] In an embodiment, analyzing the corrected photomask structure pattern on the test photomask includes: (i) performing a manufacturing simulation process based on the test photomask; and (ii) visually inspecting the results of the manufacturing simulation process.

[0031] In one embodiment, the potential correction photomask structure pattern is incorporated into the unused space on a previously manufactured photomask.

[0032] In one embodiment, a mask design correction system includes one or more computer systems, each computer system including one or more processors and multiple modules, the one or more processors being operatively connected to one or more memory devices, the multiple modules being stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the multiple modules including: (a) a scanning module configured to: (1) scan a first scanning electron microscope (SEM) image of a layer in a wafer; (2) detect wafer defects from the first SEM image of the wafer; and (3) output the location of the wafer defect on the wafer; (b) a contour extraction module operatively connected to... The module is connected to a scanning module and configured to: (1) obtain the location of a wafer defect on the wafer; and (2) extract a plurality of mask contours from a second SEM image of a previously manufactured photomask associated with the layer in the wafer, wherein the extracted mask contours correspond to the locations of detected wafer defects on the previously manufactured photomask corresponding to the wafer; (c) a simulation module operatively connected to the contour extraction module and configured to: (1) obtain a plurality of extracted mask contours; and (2) generate a simulated wafer using the plurality of extracted mask contours; (d) a detection module operatively connected to the simulation module and configured to: (1) obtain the simulated wafer; and (2) detect on the simulated wafer... (e) A photomask analysis module, operatively connected to the detection module and configured to: (1) obtain data including defects on a simulated wafer; (2) determine one or more problematic regions of a previously manufactured photomask based on the data including defects on a simulated wafer; and (3) generate pattern information related to the problematic regions of the previously manufactured photomask; (f) A spatial domain analysis module, operatively connected to the photomask analysis module and configured to: (1) obtain pattern information related to the problematic regions of the previously manufactured photomask; and (2) perform spatial domain analysis of the pattern information. (g) A pattern recognition module, operably connected to the spatial domain analysis module and configured to: (1) obtain the results of the spatial domain analysis; (2) determine multiple photomask structure patterns based on the results of the spatial domain analysis, the multiple photomask structure patterns displaying one or more corresponding defects; (3) output data corresponding to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; (h) A pattern generation module, operably connected to the pattern recognition module and configured to: (1) obtain data corresponding to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects;(2) Selecting multiple processes to apply to multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; and (3) for each selected process, selecting multiple parameters corresponding to that process; and (4) applying the selected process with the selected parameters to the multiple photomask structure patterns, the multiple photomask structure patterns displaying one or more corresponding defects; (5) generating multiple corrected photomask structure patterns from the multiple photomask structure patterns based on spatial domain analysis; and (i) a script module operatively connected to the pattern generation module and configured to: (1) obtain multiple corrected photomask structure patterns; (2) generate one or more photomask pattern correction scripts based on the multiple corrected photomask structure patterns; and (3) execute one or more photomask pattern correction scripts to apply one or more of the multiple corrected photomask structure patterns to the photomask layout.

[0033] In an embodiment, the pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

[0034] In an embodiment, spatial domain analysis includes: (i) performing a pattern description search of pattern information; (ii) identifying photomask structures from the pattern information based on the pattern description search; and (iii) generating a graphic corresponding to the identified photomask structure. In an embodiment, multiple photomask structure patterns are identified based on the graphic corresponding to the identified photomask structure, the multiple photomask structure patterns displaying one or more corresponding defects.

[0035] In one embodiment, the corrected photomask structure pattern is incorporated into the unused space on a previously manufactured photomask. Attached Figure Description

[0036] Example embodiments of the present invention will be described with reference to the accompanying drawings, wherein:

[0037] Figure 1 A mask design correction system according to an embodiment of the present invention is described;

[0038] Figure 2 A flowchart illustrating a process flow for creating a photomask according to an exemplary embodiment of the present invention is provided.

[0039] Figures 3A to 3C A flowchart of a process for creating a photomask according to an exemplary embodiment of the present invention is shown;

[0040] Figure 4 An example algorithm performed by a SEM image to contour extraction tool according to an exemplary embodiment of the present invention is described;

[0041] Figure 5This is an example of an output log file of a SEM image to contour extraction tool according to an exemplary embodiment of the present invention;

[0042] Figure 6 Sample options for running a SEM image to contour extraction tool according to an exemplary embodiment of the present invention are described;

[0043] Figure 7 A smooth, pixelated contour generated by a contour extraction tool from a SEM image is depicted according to an exemplary embodiment of the present invention.

[0044] Figures 8(a), 8(b), and 8(c) depict a process for obtaining pattern information from a SEM image according to an exemplary embodiment of the present invention;

[0045] Figure 9 An example of pattern search computer code according to an exemplary embodiment of the present invention is depicted;

[0046] Figure 10 Example data analysis computer code according to an exemplary embodiment of the present invention is depicted;

[0047] Figure 11 An example process for generating one or more photomask structure patterns displaying one or more defects is described according to an exemplary embodiment of the present invention;

[0048] Figure 12 A table depicting corner rounding enhancements and horizontal / vertical offsets to be applied to a photomask structure pattern according to an exemplary embodiment of the present invention to create a potential corrective photomask structure pattern;

[0049] Figure 13 A table is depicting dose modulation to be applied at different times to different photomask structures according to an exemplary embodiment of the present invention to create a set of potential corrective photomask structures;

[0050] Figure 14 The spatial spacing and line spacing designs according to exemplary embodiments of the present invention are described for application to different photomask structures to create a set of potential corrective photomask structures;

[0051] Figure 15 Line-end and spatial-end designs according to exemplary embodiments of the present invention are described for application to different photomask structures to create a set of potential corrective photomask structures;

[0052] Figure 16 The invention describes a DOT orthogonal design / aperture orthogonal design to be applied to different photomask structures to create a set of potential corrective photomask structures, according to an exemplary embodiment of the invention;

[0053] Figure 17The invention describes a DOT interleaving design / maintaining interleaving design to be applied to different photomask structures to create a set of potential corrective photomask structures, according to an exemplary embodiment of the invention;

[0054] Figure 18 A table comprising rules for applying correction processing to one or more photomask structures is depicted according to an exemplary embodiment of the invention;

[0055] Figure 19 A comparison of SEM images of different photomasks according to an exemplary embodiment of the present invention is depicted, one photomask being unprocessed and the other photomask being processed by correcting the photomask structure;

[0056] Figure 20 An improvement in the contact between a processed mask and an unprocessed mask according to an exemplary embodiment of the present invention is described;

[0057] Figure 21 A comparison of SEM images of different photomasks according to an exemplary embodiment of the present invention is depicted, one photomask being unprocessed and the other photomask being processed by correcting the photomask structure. Detailed Implementation

[0058] This invention generally relates to systems and methods for creating masks that solve the problem of fabricating integrated circuits on wafers using EUV lithography and optical lithography.

[0059] In this embodiment, the LAMA characterization method using contour extraction can be used to characterize process improvements and predict wafer performance. The required mask process improvements include physical mask process components and write data optimization techniques, namely, mask process correction (MPC).

[0060] The fidelity of the mask pattern is particularly important in EUVL. In an embodiment, such as Figure 19 As shown, the method developed using LAMA for both mask and wafer fabrication demonstrates improved mask fidelity for 1D structures with contact holes, a problem that is inherently 2D. This phenomenon leads to high local CD uniformity (LCDU) errors on the photomask, which in turn cause LCDU errors on the wafer. This can be slightly mitigated by LAMA processing techniques, such as... Figure 21 As shown.

[0061] Figure 1A block diagram depicts a mask design correction system according to an embodiment. The mask design correction system 100 can be implemented using, for example, one or more desktop computers, server-class computers, laptop computers, tablet computers, and smartphones (hereinafter referred to as the mask design correction system). As examples, one or more computing devices can be coupled to a wired or wireless local area network, wide area network, internet, or connected via a cloud computing platform.

[0062] As shown in the figure, the mask design correction system 100 includes a scanning module 105. In an embodiment, the scanning module 105 is configured to scan a first scanning electron microscope (SEM) image of a layer in a wafer, detect wafer defects from the first SEM image of the wafer, and output the location of the wafer defect on the wafer. A contour extraction module 110 is configured to obtain the location of the wafer defect on the wafer and extract a plurality of mask contours from a second SEM image of a previously manufactured photomask associated with that layer in the wafer, wherein the extracted mask contours correspond to the location of the detected wafer defect on the previously manufactured photomask. A simulation module 115 is configured to obtain the plurality of extracted mask contours and use the plurality of extracted mask contours to generate a simulated manufactured wafer. A detection module 120 is configured to obtain the simulated manufactured wafer, detect one or more defects on the simulated manufactured wafer, and output data including the defects on the simulated manufactured wafer. The photomask analysis module 125 is configured to acquire data including defects on a simulated wafer, determine one or more problematic regions of a previously manufactured photomask based on the data including defects on the simulated wafer, and generate pattern information related to the problematic regions of the previously manufactured photomask. The spatial domain analysis module 130 is configured to acquire the pattern information related to the problematic regions of the previously manufactured photomask, perform spatial domain analysis on the pattern information, and output the results of the spatial domain analysis. The pattern recognition module 135 is configured to acquire the results of the spatial domain analysis, determine multiple photomask structure patterns based on the spatial domain analysis results, the multiple photomask structure patterns displaying one or more corresponding defects, and output data corresponding to the multiple photomask structure patterns, the data of the multiple photomask structure patterns displaying one or more corresponding defects. Pattern generation module 140 is configured to obtain data corresponding to multiple photomask structure patterns, which display one or more corresponding defects; select multiple processes to be applied to the multiple photomask structure patterns, which display one or more corresponding defects; for each selected process, select multiple parameters corresponding to that process; apply the selected process with the selected parameters to the multiple photomask structure patterns, which display one or more corresponding defects; generate multiple potential correction photomask structure patterns from the multiple photomask structure patterns based on spatial domain analysis; incorporate the potential correction photomask structure patterns into a test photomask; analyze the potential correction photomask structure patterns on the test photomask; and select and output multiple correction photomask structure patterns from the multiple potential correction photomask structure patterns. Script module 145 is configured to obtain the multiple correction photomask structure patterns, generate one or more photomask pattern correction scripts based on the multiple correction photomask structure patterns, and execute one or more photomask pattern correction scripts to apply one or more of the multiple correction photomask structure patterns to the photomask layout.

[0063] Figure 2 This is a flowchart of a process flow according to an exemplary embodiment of the present invention. The depicted process flow illustrates the process flow controlled by a mask design correction system (such as...). Figure 1 The steps performed in an embodiment of the depicted system 100 are as follows: The process flow includes a data analysis step, in which spatial domain analysis is performed to identify mask structures requiring correction. Additionally, SEM image contour analysis may be performed. The design and embedding of a standard LAM pattern step designs a LAMA pattern based on the data analysis and incorporates the pattern into a test mask. The LAMA pattern analysis and solution step analyzes the LAMA pattern on the test mask and builds a custom LAMA solution. Next, the LAMA pattern is applied to the mask layout, and the final mask is built and validated. Finally, contour extraction is performed to evaluate the predicted wafer performance of the final mask.

[0064] Figures 3A to 3C A process flow for method 300 according to an exemplary embodiment of the present invention is illustrated. In the embodiment, the illustrated process flow can be performed by one or more computing devices, such as one or more desktop computers, server-class computers, laptop computers, tablet computers, and smartphones (hereinafter referred to as a mask design correction system). For example, the one or more computing devices can be coupled to a wired or wireless local area network, wide area network, internet, or connected via a cloud computing platform. In the embodiment, the network will be a secure network.

[0065] Method 300 begins at step S302. At step S302, in an embodiment, spatial domain analysis is used to identify potential weaknesses and / or SEM images of a layer in the wafer analyzed by a mask design correction system performing the method. The mask design correction system analyzes defects in the SEM images of the wafer, such as line breaks and microbridges. Other defects that can be resolved may also exist without departing from the scope or spirit of the invention. In an embodiment, the identified defects may be used to identify corresponding areas in the photomask design to be analyzed and / or corrected. In an embodiment, step S302 may be replaced by other processes capable of identifying potential hot spots, weaknesses, or errors in a layer of the wafer.

[0066] In step S304, in an embodiment, the mask design correction system extracts the mask profile from the SEM image of the photomask, wherein the photomask is a corresponding photomask used to manufacture the wafer. In an embodiment where the SEM image of the wafer is used in step S302, the photomask corresponds to a layer in the wafer associated with the SEM image of the wafer. In embodiments where other processes are used to identify hot spots in a layer of the wafer, the photomask corresponds to a layer in the wafer associated with the identified hot spots. According to an embodiment, the mask profile is extracted based on the region of display defects identified in the SEM image. In embodiments, for example, the extraction can be performed based on the SEM image of the photomask and / or the design data of the photomask.

[0067] Next, at step S306, the mask design correction system uses the extracted mask profile as input to run a manufacturing simulation process. This simulation generates a simulated manufactured wafer, which can then be analyzed for defects similar to those detected on the physical wafer in step S302, or other identified actual and / or potential hot spots.

[0068] At step S308, the mask design correction system detects one or more defects on the simulated wafer. The mask design correction system can detect defect or weakness candidates by using, for example, visual inspection tools, optical inspection tools, or critical dimension measurement tools.

[0069] At step S310, the mask design correction system uses LAMA mask and wafer coordination simulation to determine one or more problematic regions of the photomask based on the detected defects. In this embodiment, the location of one or more problematic regions will be identified for further analysis and correction in the mask design of the corresponding layer.

[0070] Then, method 300 proceeds to step S312. In step S312, pattern information relating to one or more problematic areas of the photomask identified in step S310 is obtained through a mask design correction system. In an embodiment, the pattern information may be in the form of one or more data files describing the layout of a previously manufactured photomask that shows the identified defects. In an embodiment, the pattern information may be a design of a photomask that has not yet been manufactured, but has been additionally identified as containing design elements that, if not corrected, are expected to show defects.

[0071] In this embodiment, pattern information can be obtained using scanning electron microscopy (SEM) contour extraction analysis with an existing photomask. This can be achieved using a SEM image-to-contour extraction tool that performs contour extraction algorithms, such as... Figure 4The algorithm described is a LAMA contour extraction tool. In this embodiment, other contour extraction algorithms may be used without departing from the scope or spirit of the invention. Figure 5 An example of the output log file from a LAMA SEM image to a contour extraction tool is shown. Figure 6 The document illustrates sample options for running a LAMA SEM image to contour extraction tool, which is invoked from a command-line interface of a computing device. As shown, options that can be specified include pixel selection tolerance, smoothing value usage, hue, size of the ignored region, background region size, and scale in the X and Y directions. In embodiments, other variations of process steps or material selection in wafer fabrication may be used without departing from the scope or spirit of the invention. In embodiments, the SEM image to contour extraction tool can produce... Figure 7 The smooth, pixelated outline is shown.

[0072] Figures 8(a), 8(b), and 8(c) depict the process for obtaining pattern information from SEM images. As shown, Figure 8(a) shows an SEM image of a mask profile. The mask profile represents at least a portion of the mask design associated with a problematic area or “hot spot” or “weak point” of the mask as determined in step S310. Figure 8(b) shows a high-intensity map extracted from the image in Figure 8(a) by using the SEM image associated with at least a portion of the mask design associated with the problematic area of ​​the mask design to profile extraction. The high-intensity map enables the mask design correction system to identify specific areas of the mask that may benefit from correction. After identifying these areas, the mask design correction system creates a mask design file (e.g., OASIS / GDS shown in Figure 8(c)) or any layout format file. The Open Routing System Interchange Standard (OASIS) is a specification for a layered integrated circuit mask layout data format for interchangeability between EDA (Electronic Design Automation) software, IC mask writing tools, and mask inspection tools. OASIS files store mask layout information (including mask pattern information) for subsequent analysis. Other layout data formats may be used without departing from the scope or spirit of the invention.

[0073] Once the pattern information is obtained in step S312, method 300 proceeds to step S314. In step S314 of method 300, the mask design correction system can perform spatial domain analysis on the obtained pattern information. According to an embodiment, the spatial domain analysis is performed by executing a pattern description search, which uses big data analytics to extract the pattern from the pattern information. Sample data analysis tools can be used to perform the pattern search using available commercial EDA tools. In embodiments, the pattern search may be referred to as, for example, Design Rule Check (DRC), Mask Rule Check (MRC), or Pattern Matching (PM). Figure 9 The document describes an example of pattern search code for commercially available EDA tools. Other pattern search codes may be used without departing from the scope or spirit of the invention. Input to the pattern description search software may include pattern information, such as introducing device semiconductor data. Other input data may be used in conjunction with pattern information without departing from the scope or spirit of the invention.

[0074] Once the pattern description search is performed, in this embodiment, the extracted pattern can then be analyzed by a mask design correction system, such as data analysis code. Figure 10 An example of data analysis code is shown. In this embodiment, the data analysis code outputs results showing the photomask regions / structures that can benefit from LAMA.

[0075] These and other analytical techniques may be used without departing from the scope or spirit of the invention.

[0076] Referring to Figure 3, after spatial domain analysis in step S314, method 300 proceeds to step S316. In step S306, in an embodiment, the mask design correction system determines one or more photomask structure patterns based on spatial domain analysis, for example, pattern information. These one or more photomask structure patterns reveal one or more weakness candidates, allowing the structure to benefit from LAMA applications. For example, exemplary weakness candidates and / or processing may include corner rounding, horizontal and vertical offsets, and dose modulation. Other weakness candidates and / or processing may be suitable for LAMA correction without departing from the scope or spirit of the invention.

[0077] In an embodiment, the mask design correction system is based on, for example, spatial / line spatial sampling for a customer's future product to generate one or more photomask structure patterns that display one or more weakness candidates. Other weakness candidates may also be generated without departing from the scope or spirit of the invention. Figure 11 As shown, spatial / linear spatial sampling data is input into a Python script, which generates various patterns based on the data. For example... Figure 11 As shown, the generated patterns can include, for example, regular line spacing horizontal / vertical, line end horizontal / vertical, DOT orthogonal / interlaced, regular spatial spacing horizontal / vertical, spatial end horizontal / vertical, and CNT orthogonal / interlaced, as well as structures typically integrated in logic and memory designs.

[0078] After identifying one or more photomask structure patterns displaying one or more defects, method 300 proceeds to step S318. In step S318, in an embodiment, the mask design correction system generates one or more potential correction photomask structure patterns based on the photomask structure patterns identified in step S316. In an embodiment, potential correction photomask structures are generated for one or more layers of the photomask corresponding to the pattern information obtained in step S312. In an embodiment, step S318 requires designing and generating a Lithography-Aware Mask Process Correction Application (LAMA) standard based on data analysis. The LAMA standard includes potential correction structures to be used to construct test photomasks. Inputs to step S318 include manufacturing knowledge, data from the wafer manufacturer, and data extracted from data analysis. For example, manufacturing knowledge may include constraints on the manufacturing process for which the photomask will be used. Manufacturing data may include, for example, minimum space and width parameters, corner-to-corner measurements, and / or mask process fidelity characterizations (such as corner rounding, corner backing, and spacing). The results of data analysis used to generate the corrected photomask structure pattern may include, for example, customer design spatial domain data, anchored / critical structures, and / or a series of critical dimensions and design shapes to be focused on in the LAMA standard.

[0079] In an embodiment, the mask design correction system selects multiple processes to be applied to multiple photomask structure patterns that display one or more corresponding defects. For each selected process, the mask design correction system selects multiple parameters corresponding to that process. After selecting the processes and the parameters corresponding to them, the mask design correction system applies the selected processes with the selected parameters to the multiple photomask structure patterns that display one or more corresponding defects. In this way, the mask design correction system generates new photomask structure patterns based on pattern information. Different processes are possible, including, for example, corner rounding and dose adjustment. The mask design correction system applies multiple processes to defective photomask pattern structures to generate multiple photomask structure patterns that can potentially correct defects.

[0080] In embodiments, when a test mask is to be used, as described below, multiple potential correction structures can be identified and used on the test mask. In embodiments, when a photomask for the full formation of the layer can be used, specific correction structures can be selected and applied to the fully formed photomask design for the layer, and then applied directly to generate the photomask. In embodiments, a combination of these techniques can be used, for example, combining one or more potential correction structures from unused portions of the photomask to print the fully formed photomask design for the layer.

[0081] In embodiments, the LAMA standard can be designed with a smaller feature adjustment dose and corner rounding to enhance resolution. Furthermore, the unprocessed pattern can be used for fidelity characterization and for defining photomask constraints. Examples of LAMA standard designs that can be used to generate potential corrected photomask structure patterns are shown below. Figures 12 to 17 As shown in the figure. Other LAMA standards may be designed and / or applied without departing from the scope or spirit of the invention.

[0082] Figure 12 A table depicts corner rounding enhancements and horizontal / vertical offsets to be applied to photomask structure patterns to create potential corrective photomask structure patterns. Similarly, Figure 13 A table is presented outlining dose modulation techniques to be applied at different times to different photomask structures in order to create a set of potential corrective photomask structures. Figure 14 The design describes the spatial spacing and line spacing of different photomask structures to create a set of potential corrective photomask structures. Figure 15 The line-end and spatial-end designs are described for application to different photomask structures to create a set of potential corrective photomask structures. Figure 16 The DOT / aperture orthogonal design is described for application to different photomask structures to create a set of potential corrective photomask structures. Figure 17 DOT / aperture interleaving designs are depicted for application to different photomask structures to create a set of potential corrective photomask structures. These LAMA standard designs represent examples of potential corrective photomask structures corresponding to structures with one or more weaknesses identified in the pattern information. LAMA standard patterns can be custom-sized and exhibit flexibility and ease of placement in any unused space on the photomask, which in turn saves on additional mask costs. One or more potential corrective photomask structures can be formed using these LAMA standard designs and / or other LAMA standard designs without departing from the scope or spirit of the invention.

[0083] Next, in step S320, the potential correction photomask structure pattern is incorporated into the photomask design. According to an embodiment, in this step, the mask design correction system performing method 300 reads a LAMA standard design including the potential correction photomask structure and applies these design elements to photomask data that defines how the photomask can be constructed. According to an embodiment, the potential correction photomask structure is incorporated into unused space on an existing photomask layout.

[0084] At step S322, the mask design correction system analyzes the potential correction photomask structure pattern on the test photomask. According to embodiments, the mask design correction system can use SEM tools, CD tools, or any other optical inspection tools to perform simulation and / or visual inspection on the photomask data in which the correction photomask structure has been incorporated, in order to determine whether problematic areas shown in the pattern information have been corrected and / or rectified in an optimized and / or acceptable manner.

[0085] In step S324, the mask design correction system selects a subset of multiple potential correction photomask structure patterns from a plurality of potential correction photomask structure patterns. The selection of the correction photomask structure pattern is based on the analysis performed in step S322. In an embodiment, the potential correction photomask structure that exhibits the highest degree of correction for the identified defect is selected. In an embodiment, the selected correction photomask structure may be an interpolation between two potential correction photomask structure patterns. That is, the interpolated correction photomask structure pattern is a combination of adjacent patterns that is determined to be a more effective solution to the identified defect.

[0086] Next, in step S326, the mask design correction system generates one or more photomask pattern correction scripts based on the analysis of the test photomask. According to an embodiment, the mask design correction system constructs one or more tables containing rules for applying correction processing to one or more photomask structures. Figure 18 An example of such a table is depicted in the text. As shown, Figure 18 The table contains a set of MRC rules (in this case, corner rounding rules) to be applied to the test photomask. Figure 18 The table is based on the calibration photomask structure pattern incorporated into the test photomask and selected in step S324. The mask design calibration system generates one or more photomask pattern calibration scripts based on the rules described in one or more tables. In this embodiment, the scripts are generated in the NCS language. The scripts can also be generated using the Python programming language or any other EDA company scripting language. Other scripting or programming languages ​​may be used without departing from the scope or spirit of the invention.

[0087] Next, in step S328, the mask design correction system executes one or more photomask pattern correction scripts to apply the corrected photomask structure to the photomask layout that can be used to form the desired IC structure. (See reference...) Figure 18 The corresponding script generated from the table will be executed to apply the listed rules to the photomask layout that can be used to generate the final photomask. Other scripts may be used without departing from the scope or spirit of the invention.

[0088] In various example embodiments, the correction photomask structure can be located on the mask in a suitable manner. For example, multiple correction mask patterns can be formed on the board, allowing one or more of the correction mask patterns to be used to form each layer of the semiconductor device. Furthermore, it should be understood that the correction mask pattern can be applied to a test mask that does not include or only includes some of the mask patterns used for the final mask design, or it can be applied to a final mask that includes a complete layer pattern for forming the IC product. Additionally, in example embodiments, not all correction mask patterns on the mask may be used during the IC manufacturing process, and in some cases, only the correction mask pattern that achieves optimal correction is used, even if other correction patterns may be present on the mask.

[0089] In step S330, based on photomask manufacturing techniques known in the art, a final photomask is physically manufactured and incorporated into the complete design for the layer, according to the final photomask layout for the entire layer.

[0090] In one embodiment, a final mask design and a correction mask pattern associated with only a portion of an entire layer can be printed onto the same photomask, the final mask design comprising an entire layer with incorporated, selected correction patterns. In such an embodiment, an entire layer can be delivered to the customer, its potential corrections and potential correction patterns to be tested for use in future versions of the photomask of that layer or future versions with similar design elements. In such an embodiment, the intermediate steps of manufacturing and analyzing separate test masks can be skipped.

[0091] At step S332, the mask design correction system confirms that one or more corrected photomask structures have been applied to the final photomask. According to an embodiment, the mask design correction system can utilize a critical dimension (CD) inspection tool to analyze, for example, corner rounding and horizontal / vertical offsets in the obtained final photomask. The mask design correction system uses a CD inspection tool to extract the mask SEM contour or SEM image to a contour extraction tool and compares those contours with the final photomask layout design.

[0092] At step S334, the mask design correction system determines that multiple locations on the wafer produced based on the final photomask do not exhibit defects corresponding to one or more defects exhibited on a previously manufactured photomask. In an embodiment, multiple locations on the final photomask can be selected and compared to corresponding locations on a previously manufactured wafer produced using an untreated photomask. The treated and untreated photomask wafers are compared both visually and using analytical tools. For example, Figure 21A comparison is shown between the SEM image of the unprocessed photomask and the SEM image of the photomask processed with a corrected LAMA pattern of the aperture structure. As shown in the figure, the processed photomask has no missing patterns and enhanced LCDU, and more closely conforms to the mask design specifications.

[0093] Figure 19 A comparison of SEM images with different photomasks is depicted, one photomask being unprocessed and the other photomask being processed using the corrected photomask structure selected in step S324. As shown, in the processed photomask, there are no line breaks, and the line widths and spacing more closely conform to the mask design specifications.

[0094] Figure 20 An example of improved contact holes between the processed and unprocessed masks is depicted. As shown, the unprocessed contour exhibits more corner callbacks compared to the processed mask.

[0095] These and other improvements can be obtained by using the corrected LAMA pattern according to the present invention.

[0096] ******************

[0097] Embodiments of the invention have now been shown and described in detail, and various modifications and improvements thereof will be apparent to those skilled in the art. Therefore, the exemplary embodiments of the invention described above are intended to be illustrative and not restrictive. The spirit and scope of the invention should be interpreted broadly.

Claims

1. A method for manufacturing a photomask, comprising: (a) Detecting wafer defects from scanning electron microscope images of the wafer; (b) Extracting multiple mask profiles from scanning electron microscope images of a previously manufactured photomask, wherein the extracted mask profiles correspond to the detected wafer defects; (c) Using the extracted multiple mask contours, generate a simulated fabricated wafer; (d) Detect one or more defects on the simulated wafer; (e) Based on defects on the simulated wafer, identify one or more problematic areas of the photomask; (f) Obtain pattern information related to the problematic area of ​​the previously manufactured photomask; (g) Perform spatial domain analysis of the pattern information; (h) Based on the spatial domain analysis, a plurality of photomask structure patterns are determined, wherein the plurality of photomask structure patterns display one or more corresponding defects; (i) Generating a plurality of potential correction photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, select multiple parameters corresponding to the selected process; and (iii) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (j) Incorporate the potential correction photomask structure pattern into the test photomask; (k) Analyze the potential correction photomask structure pattern on the test photomask; (l) Select a plurality of correction photomask structure patterns from the plurality of potential correction photomask structure patterns; (m) Based on the analysis of the plurality of corrected photomask structure patterns on the test photomask, generate one or more photomask pattern correction scripts; (n) Execute the one or more photomask pattern correction scripts to apply one or more of the multiple corrected photomask structure patterns to a whole layer of photomask layout; (o) Construct a photomask for the entire layer based on the final photomask layout, in which one or more of the plurality of correction photomask structure patterns have been incorporated; (p) Confirm that the one or more corrected photomask structure patterns have been applied to the final photomask; and (q) Determine that multiple locations on the wafer produced based on the final photomask do not display defects corresponding to one or more defects of the previously manufactured photomask, one or more of the multiple corrective photomask structure patterns having been incorporated into the final photomask.

2. The method according to claim 1, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

3. The method according to claim 1, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

4. The method according to claim 3, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

5. The method according to claim 1, wherein, Analysis of the potential correction photomask structure pattern on the test photomask includes: (i) Perform a manufacturing simulation process based on the photomask; and (ii) Evaluate the results of the manufacturing simulation process.

6. The method according to claim 1, wherein, The potential corrective photomask structure pattern is incorporated into the unused space on the manufactured photomask.

7. A method for manufacturing a photomask, comprising: (a) Detecting wafer defects from scanning electron microscope images of the wafer; (b) Extracting multiple mask profiles from scanning electron microscope images of previously fabricated photomasks, wherein the extracted mask profiles correspond to detected wafer defects; (c) Using the extracted multiple mask profiles, generate a simulated fabricated wafer; (d) Detect one or more defects on the simulated wafer; (e) Based on the defects on the simulated wafer, identify one or more problem areas of the previously manufactured photomask; (f) Obtain pattern information related to the problem area of ​​the previously manufactured photomask; (g) Perform spatial domain analysis of the pattern information; (h) Based on the spatial domain analysis, a plurality of photomask structure patterns are determined, wherein the plurality of photomask structure patterns display one or more corresponding defects; (i) Generating multiple corrected photomask structure patterns from the multiple photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, select multiple parameters corresponding to the selected process; and (iii) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (j) Generate one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) Execute the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to the photomask layout; (l) Construct a photomask based on the final photomask layout of one layer, wherein one or more of the plurality of correction photomask structure patterns have been incorporated into the photomask; (m) Confirm that the one or more corrected photomask structure patterns have been applied to the photomask; and (n) Determine that multiple locations on a wafer produced based on the photomask do not display defects corresponding to one or more defects of a previously manufactured photomask, wherein one or more of the multiple corrective photomask structure patterns have been incorporated into the photomask.

8. The method according to claim 7, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

9. The method according to claim 7, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

10. The method according to claim 9, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

11. The method according to claim 7, wherein, The corrected photomask structure pattern is incorporated into the unused space on the previously manufactured photomask.

12. A system for manufacturing a photomask, comprising: One or more processing units; as well as The memory, wherein the one or more processing units are configured to execute machine-readable instructions, which, when executed, cause the system to: (a) Detecting wafer defects from scanning electron microscope images of the wafer; (b) Extracting multiple mask profiles from scanning electron microscope images of previously fabricated photomasks, wherein the extracted mask profiles correspond to detected wafer defects; (c) Using the extracted multiple mask contours, generate a simulated fabricated wafer; (d) Detect one or more defects on the simulated wafer; (e) Based on defects on the simulated wafer, identify one or more problematic areas of the photomask; (f) Obtain pattern information related to the problematic area of ​​the previously manufactured photomask; (g) Perform spatial domain analysis of the pattern information; (h) Based on the spatial domain analysis, a plurality of photomask structure patterns are determined, wherein the plurality of photomask structure patterns display one or more corresponding defects; (i) Generating a plurality of potential correction photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, select multiple parameters corresponding to the selected process; and (iii) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (j) Incorporate the potential correction photomask structure pattern into the test photomask; (k) Analyze the potential correction photomask structure pattern on the test photomask; (l) Select a plurality of correction photomask structure patterns from the plurality of potential correction photomask structure patterns; (m) Based on the analysis of the plurality of corrected photomask structure patterns on the test photomask, generate one or more photomask pattern correction scripts; (n) Execute the one or more photomask pattern correction scripts to apply one or more of the multiple corrected photomask structure patterns to the final photomask layout of an entire layer; (o) Construct a photomask for the entire layer based on the final photomask layout, wherein one or more of the plurality of correction photomask structure patterns have been incorporated into the photomask for the entire layer; (p) Confirm that the one or more corrected photomask structure patterns have been applied to the final photomask; and (q) Determine that multiple locations on the wafer produced based on the final photomask do not display defects corresponding to one or more defects of the previously manufactured photomask, one or more of the multiple corrective photomask structure patterns having been incorporated into the final photomask.

13. The system according to claim 12, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

14. The system according to claim 12, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

15. The system according to claim 14, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

16. The system according to claim 12, wherein, Analysis of the potential correction photomask structure pattern on the test photomask includes: (i) Perform a manufacturing simulation process based on the test photomask; and (ii) Visually inspect the results of the manufacturing simulation process.

17. The system according to claim 12, wherein, The potential correction photomask structure pattern is incorporated into the unused space on the previously manufactured photomask.

18. A system for manufacturing a photomask, comprising: One or more processing units; as well as The memory, wherein the one or more processing units are configured to execute machine-readable instructions, which, when executed, cause the system to: (a) Detecting wafer defects from scanning electron microscope images of the wafer; (b) Extracting multiple mask profiles from scanning electron microscope images of previously fabricated photomasks, wherein the extracted mask profiles correspond to detected wafer defects; (c) Using the extracted multiple mask contours, generate a simulated fabricated wafer; (d) Detect one or more defects on the simulated wafer; (e) Based on the defects on the simulated wafer, identify one or more problem areas of the previously manufactured photomask; (f) Obtain pattern information related to the problem area of ​​the previously manufactured photomask; (g) Perform spatial domain analysis of the pattern information; (h) Based on the spatial domain analysis, a plurality of photomask structure patterns are determined, wherein the plurality of photomask structure patterns display one or more corresponding defects; (i) Generating a corrected photomask structure pattern from the plurality of photomask structure patterns based on the spatial domain analysis, wherein the generation includes: (i) Selecting multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (ii) For each selected process, select multiple parameters corresponding to the selected process; and (iii) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (j) Generate one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) Execute the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to the photomask layout; (l) Construct a photomask based on the final photomask layout of one layer, wherein one or more of the plurality of correction photomask structure patterns have been incorporated into the photomask; (m) Confirm that one or more corrected photomask structure patterns have been applied to the photomask; and (n) Determine that multiple locations on a wafer produced based on the photomask do not display defects corresponding to one or more defects of a previously manufactured photomask, wherein one or more of the multiple corrective photomask structure patterns have been incorporated into the photomask.

19. The system according to claim 18, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

20. The system according to claim 18, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

21. The system according to claim 20, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

22. The system according to claim 20, wherein, The corrected photomask structure pattern is incorporated into the unused space on the previously manufactured photomask.

23. A mask design correction system comprising one or more computer systems, each computer system including one or more processors and a plurality of modules, the one or more processors being operatively connected to one or more memory devices, the plurality of modules being stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the plurality of modules comprising: (a) A scanning module, the scanning module being configured to: (1) First scanning electron microscope image of a layer in a scanning wafer; (2) Detect wafer defects from the first scanning electron microscope image of the wafer; and (3) Output the location of the wafer defect on the wafer; (b) A contour extraction module, operatively connected to the scanning module and configured to: (1) Obtain the location on the wafer where the wafer defect is located; and (2) Extracting a plurality of mask profiles from a second scanning electron microscope image of a previously manufactured photomask associated with the layer in the wafer, wherein the extracted mask profiles correspond to the locations on the previously manufactured photomask that correspond to detected wafer defects in the wafer; (c) A simulation module, operatively connected to the contour extraction module and configured to: (1) Obtain the extracted multiple mask contours; and (2) Using the extracted multiple mask contours, a simulated manufactured wafer is generated; (d) A detection module, operatively connected to the simulation module and configured to: (1) Obtain the simulated wafer; (2) Detect one or more defects on the simulated wafer; (3) Output data including defects on the simulated wafer; (e) A photomask analysis module, operably connected to the detection module and configured to: (1) Obtain the data including defects on the simulated wafer; (2) Based on the data including defects on the simulated wafer, determine one or more problematic areas of the previously manufactured photomask; and (3) Generate pattern information related to the problematic areas of the previously manufactured photomask; (f) A spatial domain analysis module, operatively connected to the photomask analysis module and configured to: (1) Obtain the pattern information related to the problem area of ​​the previously manufactured photomask; (2) Perform spatial domain analysis of the pattern information; and (3) Output the results of the spatial domain analysis; (g) A pattern recognition module, operably connected to the spatial domain analysis module and configured to: (1) Obtain the results of the spatial domain analysis; (2) Based on the results of the spatial domain analysis, multiple photomask structure patterns are determined, and the multiple photomask structure patterns display one or more corresponding defects; (3) Output data corresponding to the plurality of photomask structure patterns, wherein the plurality of photomask structure patterns display one or more corresponding defects; (h) A pattern generation module, operably connected to the pattern recognition module and configured to: (1) Obtain the data corresponding to a plurality of photomask structure patterns, wherein the plurality of photomask structure patterns display one or more corresponding defects; (2) Select multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (3) For each selected process, select multiple parameters corresponding to the process; (4) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (5) Generate multiple potential correction photomask structure patterns from the multiple photomask structure patterns based on the spatial domain analysis; (6) Incorporate the potential correction photomask structure pattern into the test photomask; (7) Analyze the potential correction photomask structure pattern on the test photomask; (8) Selecting and outputting multiple correction photomask structure patterns from the plurality of potential correction photomask structure patterns; and (i) A script module, operably connected to the image selection module and configured to: (1) Obtain the multiple correction photomask structure patterns; (2) Generate one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; and (3) Execute the one or more photomask pattern correction scripts to apply one or more of the multiple corrected photomask structure patterns to the photomask layout.

24. The system according to claim 23, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

25. The system according to claim 23, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

26. The system according to claim 25, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

27. The system according to claim 23, wherein, Analysis of the potential correction photomask structure pattern on the test photomask includes: (i) Perform a manufacturing simulation process based on the test photomask; and (ii) Visually inspect the results of the manufacturing simulation process.

28. The system according to claim 23, wherein, The potential correction photomask structure pattern is incorporated into the unused space on the previously manufactured photomask.

29. A mask design correction system comprising one or more computer systems, each computer system including one or more processors and a plurality of modules, the one or more processors being operatively connected to one or more memory devices, the plurality of modules being stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the plurality of modules comprising: (a) A scanning module, the scanning module being configured to: (1) First scanning electron microscope image of a layer in a scanning wafer; (2) Detect wafer defects from the first scanning electron microscope image of the wafer; and (3) Output the location of the wafer defect on the wafer; (b) A contour extraction module, operatively connected to the scanning module and configured to: (1) Obtain the location on the wafer where the wafer defect is located; and (2) Extracting a plurality of mask profiles from a second scanning electron microscope image of a previously manufactured photomask associated with the layer in the wafer, wherein the extracted mask profiles correspond to the locations on the previously manufactured photomask that correspond to detected wafer defects in the wafer; (c) A simulation module, operatively connected to the contour extraction module and configured to: (1) Obtain the extracted multiple mask contours; and (2) Using the extracted multiple mask contours, a simulated manufactured wafer is generated; (d) A detection module, operatively connected to the simulation module and configured to: (1) Obtain the simulated wafer; (2) Detect one or more defects on the simulated wafer; (3) Output data including defects on the simulated wafer; (e) A photomask analysis module, operably connected to the detection module and configured to: (1) Obtain the data including defects on the simulated wafer; (2) Based on the data including defects on the simulated wafer, determine one or more problematic areas of the previously manufactured photomask; and (3) Generate pattern information related to the problematic areas of the previously manufactured photomask; (f) A spatial domain analysis module, operatively connected to the photomask analysis module and configured to: (1) Obtain pattern information related to the problem area of ​​the previously manufactured photomask; (2) Perform spatial domain analysis of the pattern information; and (3) Output the results of the spatial domain analysis; (g) A pattern recognition module, operably connected to the spatial domain analysis module and configured to: (1) Obtain the results of the spatial domain analysis; (2) Based on the results of the spatial domain analysis, multiple photomask structure patterns are determined, and the multiple photomask structure patterns display one or more corresponding defects; (3) Output data corresponding to the plurality of photomask structure patterns, wherein the plurality of photomask structure patterns display one or more corresponding defects; (h) A pattern generation module, operably connected to the pattern recognition module and configured to: (1) Obtain the data corresponding to the plurality of photomask structure patterns, wherein the plurality of photomask structure patterns display one or more corresponding defects; (2) Select multiple processes to be applied to the plurality of photomask structure patterns, the plurality of photomask structure patterns displaying one or more corresponding defects; and (3) For each selected process, select multiple parameters corresponding to the selected process; and and (4) The selected processing with the selected parameters is applied to the plurality of photomask structure patterns, which display one or more corresponding defects; (5) Generating multiple corrected photomask structure patterns from the multiple photomask structure patterns based on the spatial domain analysis; and (i) A script module, operably connected to the pattern generation module and configured to: (1) Obtain the multiple correction photomask structure patterns; (2) Generate one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; and (3) Execute the one or more photomask pattern correction scripts to apply one or more of the multiple corrected photomask structure patterns to the photomask layout.

30. The system according to claim 29, wherein, The pattern information includes one or more data files corresponding to the layout of a previously manufactured photomask.

31. The system according to claim 29, wherein, The spatial domain analysis includes: (i) Perform a pattern description search for the pattern information; (ii) Based on the pattern description, search for and identify the photomask structure from the pattern information; and (iii) Generate a pattern corresponding to the identified photomask structure.

32. The system according to claim 31, wherein, Based on the pattern corresponding to the identified photomask structure, the plurality of photomask structure patterns are identified, and the plurality of photomask structure patterns display one or more corresponding defects.

33. The system according to claim 29, wherein, The corrected photomask structure pattern is incorporated into the unused space on the previously manufactured photomask.

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