Semiconductor device, power conversion device, mobile object, and method for manufacturing semiconductor device

Abstract

The object is to provide a technology capable of suppressing the scattering of metal powder during ultrasonic bonding, and suppressing the occurrence of discharge and abnormal operation in a semiconductor device. The semiconductor device (50) comprises: an insulating substrate (1) having an insulating layer (2) and a metal pattern (3) formed on the insulating layer (2); and an electrode (10) bonded to the metal pattern (3). A receiving portion (11) is formed on the electrode (10) at a position closer to the inner peripheral side than the outer peripheral portion of the bonding surface of the surface bonding to the metal pattern (3). The receiving portion (11) is recessed upward and can receive metal powder (31) generated when the electrode (10) is bonded to the metal pattern (3). The outer peripheral portion of the bonding surface of the electrode (10) is bonded to the metal pattern (3).

Description

Technical Field

[0001] The present invention relates to a semiconductor device, a power conversion device, a mobile object, and a method for manufacturing a semiconductor device. Background Art

[0002] In recent years, as semiconductor devices have become smaller and more dense, lead frames have been used as electrodes that have high thermal cycle resistance and are suitable for high-temperature operation. In response, ultrasonic bonding is increasingly used when bonding electrodes to metal patterns formed on the surface side of an insulating substrate.

[0003] For example, Patent Document 1 proposes a method of providing protrusions on the surface of an electrode to increase the bonding strength during ultrasonic bonding.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2005-259880 Summary of the invention

[0005] However, the conventional method has a problem that metal powder generated at the bonding surface between the electrode and the metal pattern is scattered into the semiconductor device due to vibration during ultrasonic bonding, thereby causing discharge in the semiconductor device or causing abnormal operation.

[0006] Therefore, an object of the present invention is to provide a technology capable of suppressing the scattering of metal powder during ultrasonic bonding and suppressing the occurrence of discharge and abnormal operation in a semiconductor device.

[0007] The semiconductor device involved in the present invention comprises: an insulating substrate, which has an insulating layer and a metal pattern formed on the insulating layer; and an electrode, which is joined to the metal pattern, and a receiving portion is formed on the electrode at a position closer to the inner peripheral side than the surface of the electrode that is joined to the metal pattern, i.e., the peripheral portion of the joining surface, the receiving portion is recessed upward and can receive metal powder generated when the electrode is joined to the metal pattern, and the peripheral portion of the joining surface of the electrode is joined to the metal pattern.

[0008] Effects of the Invention

[0009] According to the present invention, the metal powder generated when the electrode and the metal pattern are bonded can be contained in the containing portion to suppress the scattering of the metal powder, thereby suppressing discharge and abnormal operation caused by the metal powder in the semiconductor device.

[0010] The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a schematic cross-sectional view of the semiconductor device according to the first embodiment.

[0012] Figure 2 It is an explanatory diagram of ultrasonic bonding between an electrode and a metal pattern included in the semiconductor device according to the first embodiment.

[0013] Figure 3 This is a diagram showing a bonding surface of an electrode included in the semiconductor device according to the first embodiment as viewed from below.

[0014] Figure 4 This is a diagram showing a portion of the metal pattern included in the semiconductor device according to the first embodiment, which portion faces a bonding surface of an electrode, as viewed from above.

[0015] Figure 5 It is an explanatory diagram of ultrasonic bonding between an electrode and a metal pattern included in a semiconductor device according to the second embodiment.

[0016] Figure 6 This is a diagram showing a bonding surface of an electrode included in a semiconductor device according to the second embodiment when viewed from below.

[0017] Figure 7 It is an explanatory diagram of ultrasonic bonding between an electrode and a metal pattern included in a semiconductor device according to a third embodiment.

[0018] Figure 8 This is a diagram showing a bonding surface of an electrode included in a semiconductor device according to a third embodiment when viewed from below.

[0019] Fig. 9 It is an explanatory diagram of ultrasonic bonding of an electrode and a metal pattern included in a semiconductor device according to a fourth embodiment.

[0020] Fig.10 This is a diagram showing a portion of a metal pattern included in a semiconductor device according to a fourth embodiment, which portion faces a bonding surface of an electrode, as viewed from above.

[0021] Fig.11 It is an explanatory diagram of ultrasonic bonding of an electrode and a metal pattern included in a semiconductor device according to a fifth embodiment.

[0022] Fig.12 This is a diagram showing a portion of a metal pattern included in a semiconductor device according to Embodiment 5, which portion faces a bonding surface of an electrode, as viewed from above.

[0023] Fig.13 It is an explanatory diagram of ultrasonic bonding of an electrode and a metal pattern included in a semiconductor device according to a sixth embodiment.

[0024] Fig.14 This is a diagram showing a portion of a metal pattern included in a semiconductor device according to Embodiment 6, which portion faces a bonding surface of an electrode, as viewed from above.

[0025] Fig.15 This is a block diagram showing the configuration of a power conversion system including a power conversion device according to a seventh embodiment.

[0026] Fig.16 This is a block diagram showing the structure of a moving object involved in Embodiment 8. DETAILED DESCRIPTION

[0027] <Implementation Method 1>

[0028] Next, Embodiment 1 will be described with reference to the drawings. Figure 1 It is a schematic cross-sectional view of a semiconductor device 50 according to the first embodiment.

[0029] like Figure 1 As shown, the semiconductor device 50 includes an insulating substrate 1 , a semiconductor element 20 , and an electrode 10 .

[0030] The insulating substrate 1 has an insulating layer 2, a metal pattern 3, and a lower surface pattern 4. The insulating layer 2 is formed of ceramic or epoxy resin. The metal pattern 3 is provided on the upper surface of the insulating layer 2, and the lower surface pattern 4 is provided on the lower surface of the insulating layer 2. The metal pattern 3 is divided into two, for example.

[0031] The semiconductor element 20 is fixed to the upper surface of the insulating substrate 1, more specifically, the semiconductor element 20 is fixed to the upper surface of the metal pattern 3. In addition, the semiconductor element 20 is connected to a metal pattern 3 different from the metal pattern 3 to which the semiconductor element 20 is fixed via a wiring conductor 21. Figure 1 Although only one semiconductor element 20 is shown in the figure, a plurality of semiconductor elements 20 may be provided.

[0032] The semiconductor element 20 is an IGBT (Insulated Gate Bipolar Transistor) chip, a Di (Diode) chip, or a MOSFET (metal oxide semiconductor field effect transistor) chip. Here, when there are a plurality of semiconductor elements 20, a plurality of IGBT chips, Di chips, and MOSFET chips may be combined.

[0033] The electrode 10 is a lead frame and is bonded to the upper surface of the metal pattern 3 by ultrasonic bonding. The semiconductor device 50 further includes a housing, a base plate, a cover, and a packaging material, which are not shown. The insulating substrate 1, the semiconductor element 20, and the electrode 10 are protected by the housing and the packaging material.

[0034] Next, use Figure 2 to Figure 4 The bonding between the electrode 10 and the metal pattern 3 will be described. Figure 2It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 . Figure 3 This is a diagram showing the bonding surface of the electrode 10 as viewed from below. Figure 4 This is a diagram showing a portion of the metal pattern 3 facing the bonding surface of the electrode 10 as viewed from above.

[0035] like Figure 2 and Figure 3 As shown in FIG. 1 , the electrode 10 has a receiving portion 11 capable of receiving metal powder 31 generated when the electrode 10 is joined to the metal pattern 3. The receiving portion 11 is formed on the inner peripheral side of the surface of the electrode 10 that is joined to the metal pattern 3, that is, the outer peripheral portion of the joining surface. More specifically, the receiving portion 11 is a recessed portion that is formed upward in the center of the joining surface of the electrode 10.

[0036] In addition, Figure 3 In the embodiment, although the receiving portion 11 is formed into a rectangular shape when viewed from below, it is not limited thereto and may be formed into a circular shape when viewed from below. On the other hand, the peripheral portion of the bonding surface of the electrode 10 is formed into a flat surface. That is, the peripheral portion of the bonding surface of the electrode 10 protrudes downward relative to the receiving portion 11.

[0037] like Figure 2 and Figure 4 As shown, the portion of the metal pattern 3 facing the bonding surface of the electrode 10 is formed in a planar shape. Therefore, the portion of the metal pattern 3 facing the bonding surface of the electrode 10 is in contact with the outer peripheral portion of the bonding surface of the electrode 10.

[0038] Next, a method for bonding the electrode 10 and the metal pattern 3 in the method for manufacturing the semiconductor device will be described.

[0039] First, an insulating substrate 1 and an electrode 10 are prepared. Figure 2 As shown, the outer peripheral portion of the bonding surface of the electrode 10 is brought into contact with the metal pattern 3, and ultrasonic bonding is performed while applying a load to the upper surface of the bonding portion 10a of the electrode 10 using an ultrasonic bonding tool 30. Although metal powder 31 is generated due to the friction between the electrode 10 and the metal pattern 3 during ultrasonic bonding, the metal powder 31 is contained in the containing portion 11 formed on the bonding surface of the electrode 10, so that the scattering of the metal powder can be suppressed. In addition, the bonding portion 10a of the electrode 10 is a portion on one end side of the electrode 10 bonded to the metal pattern 3, and the lower surface of the bonding portion 10a is the bonding surface of the electrode 10.

[0040] As described above, the semiconductor device 50 involved in embodiment 1 comprises: an insulating substrate 1, which has an insulating layer 2 and a metal pattern 3 formed on the insulating layer 2; and an electrode 10, which is joined to the metal pattern 3, and a receiving portion 11 is formed on the electrode 10 on the inner peripheral side than the surface of the electrode 10 that is joined to the metal pattern 3, that is, the peripheral portion of the joining surface, the receiving portion 11 is recessed upward and can accommodate metal powder 31 generated when the electrode 10 is joined to the metal pattern 3, and the peripheral portion of the joining surface of the electrode 10 is joined to the metal pattern 3.

[0041] By containing the metal powder 31 generated when the electrode 10 and the metal pattern 3 are bonded together in the containing portion 11, it is possible to suppress the scattering of the metal powder 31. This can suppress the occurrence of discharge and abnormal operation caused by the metal powder 31 in the semiconductor device 50. This can improve the reliability of the semiconductor device 50.

[0042] Furthermore, by suppressing the scattering of the metal powder 31 , it is possible to reduce the number of steps required for removing the scattered metal powder 31 and inspecting the appearance of the semiconductor device.

[0043] Furthermore, since the receiving portion 11 is a recessed portion formed in the center of the joint surface of the electrode 10, the ratio of the receiving portion 11 to the joint surface of the electrode 10 is increased, and the receiving capacity of the metal powder 31 is improved. Thus, the effect of suppressing the scattering of the metal powder 31 is improved.

[0044] Furthermore, the semiconductor device 50 further includes the semiconductor element 20 bonded to the metal pattern 3 , and the semiconductor element 20 includes a wide bandgap semiconductor, so that energy saving of the semiconductor device 50 can be achieved.

[0045] <Implementation Method 2>

[0046] Next, a semiconductor device according to Embodiment 2 will be described. Figure 5 It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 included in the semiconductor device 50 according to the second embodiment. Figure 6 This is a diagram showing the bonding surface of the electrode 10 as viewed from below. In the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0047] like Figure 5 and Figure 6 As shown, in the second embodiment, the housing portion 11 is a groove portion formed along the outer periphery of the bonding surface of the electrode 10 .

[0048] In addition, Figure 6In the embodiment, the receiving portion 11 is formed into a rectangular frame shape when viewed from below, but is not limited thereto and may be formed into a circular ring shape when viewed from below. On the other hand, the peripheral portion and the central portion of the joint surface of the electrode 10 are formed into a plane shape. That is, the peripheral portion and the central portion of the joint surface of the electrode 10 protrude downward relative to the receiving portion 11.

[0049] The portion of the metal pattern 3 facing the bonding surface of the electrode 10 is formed in a planar shape similarly to the first embodiment. Therefore, the portion of the metal pattern 3 facing the bonding surface of the electrode 10 contacts the outer periphery and the center of the bonding surface of the electrode 10 .

[0050] As described above, in the semiconductor device 50 according to the second embodiment, the receiving portion 11 is a groove portion formed along the outer periphery of the bonding surface of the electrode 10, so that the bonding area between the electrode 10 and the metal pattern 3 can be increased compared to the case of the first embodiment. As a result, the bonding strength between the electrode 10 and the metal pattern 3 can be improved.

[0051] <Implementation Method 3>

[0052] Next, a method for manufacturing the semiconductor device according to the third embodiment will be described. Figure 7 It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 included in the semiconductor device 50 according to the third embodiment. Figure 8 This is a diagram showing the bonding surface of the electrode 10 as viewed from below. In the third embodiment, the same components as those described in the first and second embodiments are denoted by the same reference numerals, and description thereof is omitted.

[0053] like Figure 7 and Figure 8 As shown, in the third embodiment, the receiving portion 11 is a groove formed along the outer periphery of the bonding surface of the electrode 10. In addition, in the state before bonding, a protruding portion 12 protruding downward is formed on the inner periphery of the electrode 10 than the receiving portion 11, that is, at the center of the bonding surface of the electrode 10. At this time, a gap is left between the outer periphery of the bonding surface of the electrode 10 and the metal pattern 3.

[0054] In addition, Figure 8 In the embodiment, the receiving portion 11 is formed into a rectangular frame shape when viewed from below, and the protruding portion 12 is formed into a rectangular shape when viewed from below, but the present invention is not limited thereto. The receiving portion 11 may be formed into a circular ring shape when viewed from below, and the protruding portion 12 may be formed into a circular shape when viewed from below.

[0055] Next, a method for joining the electrode 10 and the metal pattern 3 in the method for manufacturing a semiconductor device is described. The protruding portion 12 of the joining surface of the electrode 10 is brought into contact with the metal pattern 3, and ultrasonic bonding is performed while applying a load to the upper surface of the joining portion 10a of the electrode 10 using an ultrasonic bonding tool 30. Due to the load applied during ultrasonic bonding, the protruding portion 12 is crushed, so that the gap between the outer peripheral portion of the joining surface of the electrode 10 and the metal pattern 3 disappears, and the outer peripheral portion of the joining surface of the electrode 10 is bonded to the metal pattern 3. There is no gap between the outer peripheral portion of the joining surface of the electrode 10 and the metal pattern 3, so the metal powder 31 generated by the protruding portion 12 can be accommodated in the accommodating portion 11.

[0056] As described above, in the method for manufacturing a semiconductor device according to the third embodiment, the receiving portion 11 is a groove formed along the outer periphery of the bonding surface of the electrode 10 , and the protrusion 12 protruding downward is formed on the inner periphery of the electrode 10 .

[0057] Therefore, the metal powder 31 generated in the protrusion 12 at the center of the joint surface of the electrode 10 can be accommodated in the accommodation portion 11 , so the effect of suppressing the scattering of the metal powder 31 is improved.

[0058] <Implementation Method 4>

[0059] Next, a semiconductor device 50 according to a fourth embodiment will be described. Fig. 9 It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 included in the semiconductor device 50 according to the fourth embodiment. Fig.10 This is a diagram of a portion of the metal pattern 3 facing the bonding surface of the electrode 10 as viewed from above. In the fourth embodiment, the same components as those described in the first to third embodiments are denoted by the same reference numerals, and description thereof is omitted.

[0060] like Fig. 9 and Fig.10 As shown, in Embodiment 4, a depressed portion 5 depressed downward is formed at a portion of the metal pattern 3 opposite to the bonding surface of the electrode 10. Specifically, the depressed portion 5 is formed at a portion of the metal pattern 3 opposite to the bonding surface of the electrode 10 and its surrounding area. Therefore, the top view profile of the depressed portion 5 is larger than the bottom view profile of the bonding portion 10a of the electrode 10.

[0061] As described above, in the semiconductor device 50 according to the fourth embodiment, the depressed portion 5 is formed downwardly depressed at the portion of the metal pattern 3 facing the bonding surface of the electrode 10, so that the electrode 10 can be easily positioned relative to the metal pattern 3. Thus, the yield of the semiconductor device 50 in the ultrasonic bonding process can be improved.

[0062] <Implementation method 5>

[0063] Next, a semiconductor device 50 according to the fifth embodiment will be described. Fig.11 It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 included in the semiconductor device 50 according to the fifth embodiment. Fig.12 This is a diagram of a portion of the metal pattern 3 facing the bonding surface of the electrode 10 as viewed from above. In the fifth embodiment, the same components as those described in the first to fourth embodiments are denoted by the same reference numerals, and description thereof is omitted.

[0064] like Fig.11 and Fig.12 As shown, the metal pattern 3 is provided with a recessed portion 5 similarly to the case of the fourth embodiment. Furthermore, the recessed portion 5 is provided with a protruding portion 6 that protrudes upward and is received by the receiving portion 11 of the electrode 10 .

[0065] The protrusion 6 is formed to match the shape of the receiving portion 11. For example, when the receiving portion 11 is formed in a rectangular frame shape when viewed from below, the protrusion 6 is also formed in a rectangular frame shape when viewed from above, and when the receiving portion 11 is formed in a circular ring shape when viewed from below, the protrusion 6 is also formed in a circular ring shape when viewed from above.

[0066] When the boss 6 is accommodated in the accommodation portion 11 , a gap is formed between the accommodation portion 11 and the boss 6 , and the metal powder 31 is accommodated in the gap.

[0067] As described above, in the semiconductor device 50 according to the fifth embodiment, the protruding portion 6 that protrudes upward and is received by the receiving portion 11 of the electrode 10 is formed in the recessed portion 5 of the metal pattern 3. The metal powder 31 generated directly below the ultrasonic bonding tool 30, that is, due to the friction between the receiving portion 11 and the protruding portion 6, can be received in the gap between the receiving portion 11 and the protruding portion 6, so that the effect of suppressing the scattering of the metal powder 31 can be further improved.

[0068] Furthermore, the electrode 10 can be positioned relative to the metal pattern 3 more easily than in the case of Embodiment 4. Thus, the yield of the semiconductor device 50 in the ultrasonic bonding step can be further improved.

[0069] <Implementation Method 6>

[0070] Next, a semiconductor device 50 according to a sixth embodiment will be described. Fig.13 It is an explanatory diagram of ultrasonic bonding between the electrode 10 and the metal pattern 3 included in the semiconductor device 50 according to the sixth embodiment. Fig.14This is a diagram of a portion of the metal pattern 3 facing the bonding surface of the electrode 10 as viewed from above. In the sixth embodiment, the same components as those described in the first to fifth embodiments are denoted by the same reference numerals, and description thereof is omitted.

[0071] like Fig.13 and Fig.14 As shown, in Embodiment 6, a capture portion 7 capable of capturing metal powder 31 is provided at a portion of the metal pattern 3 opposite to the outer periphery of the bonding surface of the electrode 10. More specifically, the capture portion 7 is provided at a portion of the metal pattern 3 opposite to the outer periphery of the bonding surface of the electrode 10 and at a surrounding area thereof. The capture portion 7 is formed to match the shape of the outer periphery of the bonding surface of the electrode 10 and is formed into a rectangular frame shape when viewed from above.

[0072] The capture part 7 is made of a material different from the metal pattern 3. The material different from the metal pattern 3 is, for example, an adhesive or solder. The capture part 7 can capture the metal powder 31 in any state of a pre-solidified paste, a solidified state, or a solidified state.

[0073] The recessed portion 5 is formed on the inner peripheral side of the capturing portion 7 , that is, at the center of the bonding surface of the electrode 10 .

[0074] As described above, in the semiconductor device 50 according to the sixth embodiment, the capture portion 7 made of a material different from that of the metal pattern 3 and capable of capturing the metal powder 31 is provided at a portion of the metal pattern 3 facing the outer periphery of the bonding surface of the electrode 10 .

[0075] Therefore, the metal powder 31 generated by the friction between the outer peripheral portion of the bonding surface of the electrode 10 and the metal pattern 3 can be captured by the capturing portion 7. This can further improve the effect of suppressing the scattering of the metal powder 31.

[0076] <Implementation Method 7>

[0077] Next, a power conversion device according to Embodiment 7 will be described. Fig.15 It is a block diagram showing the configuration of a power conversion system including a power conversion device 200 according to Embodiment 7. In Embodiment 7, the same components as those described in Embodiments 1 to 6 are denoted by the same reference numerals, and description thereof is omitted.

[0078] Fig.15The power conversion system shown is composed of a power supply 100, a power conversion device 200, and a load 300. The power supply 100 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 100 can be composed of various power supplies, for example, it can be composed of a DC system, a solar cell, a storage battery, or it can be composed of a rectifier circuit connected to an AC system, and an AC / DC converter. In addition, the power supply 100 can also be composed of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0079] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts the DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. Fig.15 As shown, the power conversion device 200 includes: a main conversion circuit 201, which converts DC power into AC power and outputs it; a drive circuit 202, which outputs a drive signal for driving each switching element of the main conversion circuit 201; and a control circuit 203, which outputs a control signal for controlling the drive circuit 202 to the drive circuit 202.

[0080] Load 300 is a three-phase motor driven by AC power supplied from power converter 200. Load 300 is not limited to a specific use, and is used as a motor mounted on various electrical devices, such as a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioners.

[0081] The following describes the details of the power conversion device 200. The main conversion circuit 201 has a switching element and a freewheeling diode (not shown), and converts the DC power supplied from the power supply 100 into AC power by turning the switching element on and off, and supplies it to the load 300. There are various structures for the specific circuit structure of the main conversion circuit 201, but the main conversion circuit 201 involved in this embodiment 7 is a two-level three-phase full-bridge circuit, which can be composed of 6 switching elements and 6 freewheeling diodes connected in reverse parallel to each switching element. For at least one of each switching element and each freewheeling diode of the main conversion circuit 201, the semiconductor device 50 involved in any of the above-mentioned embodiments 1 to 6 is applied. The 6 switching elements are connected in series two by two to form upper and lower bridge arms, and each upper and lower bridge arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. In addition, the output terminals of each upper and lower bridge arm, that is, the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0082] The drive circuit 202 generates a drive signal for driving the switch element of the main conversion circuit 201, and supplies it to the control electrode of the switch element of the main conversion circuit 201. Specifically, the drive circuit 202 outputs a drive signal for turning on the switch element and a drive signal for turning off the switch element to the control electrode of each switch element according to a control signal from a control circuit 203 described later. When the switch element is maintained in the on state, the drive signal is a voltage signal (on signal) greater than or equal to the threshold voltage of the switch element, and when the switch element is maintained in the off state, the drive signal is a voltage signal (off signal) less than or equal to the threshold voltage of the switch element.

[0083] The control circuit 203 controls the switching elements of the main conversion circuit 201 to supply the desired power to the load 300. Specifically, the control circuit 203 calculates the time (on time) at which each switching element of the main conversion circuit 201 should be turned on based on the power to be supplied to the load 300. For example, the control circuit 203 can control the main conversion circuit 201 by PWM (Pulse Width Modulation) control that modulates the on time of the switching element corresponding to the voltage to be output. In addition, the control circuit 203 outputs a control instruction (control signal) to the drive circuit 202 to output an on signal to the switching element that should be turned on and an off signal to the switching element that should be turned off at each time point. The drive circuit 202 outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to the control signal.

[0084] In the power conversion device 200 according to the seventh embodiment described above, the semiconductor device 50 according to the first to sixth embodiments is used as at least one of the switching element and the freewheeling diode of the main conversion circuit 201 , thereby improving reliability.

[0085] In the present embodiment 7 described above, an example of applying the semiconductor device 50 involved in any one of the embodiments 1 to 6 to a two-level three-phase inverter is described, but the present embodiment 7 is not limited to this and can be applied to various power conversion devices. In the present embodiment 7, the semiconductor device 50 involved in any one of the embodiments 1 to 6 is set to be a two-level three-phase inverter, but it can also be a three-level or multi-level power conversion device. When power is supplied to a single-phase load, the above-mentioned semiconductor device 50 can also be applied to a single-phase inverter. In addition, when power is supplied to a DC load, etc., the above-mentioned semiconductor device 50 can also be applied to a DC / DC converter or an AC / DC converter.

[0086] In addition, the semiconductor device 200 involved in this embodiment 7 is not limited to the case where the above-mentioned load is an electric motor, and can also be used as a power supply device for, for example, an electric discharge machine, a laser processing machine, a heating cooker, a contactless power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0087] <Implementation Method 8>

[0088] Next, the moving object 400 according to the eighth embodiment will be described. Fig.16 It is a block diagram showing the configuration of a moving object 400 according to Embodiment 8. In Embodiment 8, the same components as those described in Embodiments 1 to 7 are denoted by the same reference numerals, and description thereof is omitted.

[0089] exist Fig.16 The mobile body 400 shown is equipped with the power conversion device 200 involved in the seventh embodiment, and the mobile body 400 can move using the output from the power conversion device 200. According to the above structure, the mobile body 400 can be lightweight by miniaturizing and lightweighting the converter. As a result, the mobile body 400 can be expected to have high efficiency and high performance. In addition, although the mobile body 400 is described as a railway vehicle here, it is not limited to this, and it can also be a hybrid vehicle, an electric vehicle, an elevator, etc.

[0090] While the present invention has been described in detail, the above description is in all aspects illustrative and not restrictive, and it should be understood that numerous modifications and variations that are not illustrated are conceivable.

[0091] In addition, each embodiment can be freely combined, and each embodiment can be appropriately modified or omitted.

[0092] Description of the label

[0093] 1 insulating substrate, 2 insulating layer, 3 metal pattern, 5 recessed portion, 6 raised portion, 7 capturing portion, 10 electrode, 11 receiving portion, 12 protruding portion, 20 semiconductor element, 31 metal powder, 200 power conversion device, 201 main conversion circuit, 202 drive circuit, 203 control circuit, 400 moving body.

Claims

1. A semiconductor device comprising: an insulating substrate having an insulating layer and a metal pattern formed on the insulating layer; and an electrode bonded to the metal pattern, A receiving portion is formed on the inner peripheral side of the surface of the electrode that is bonded to the metal pattern, that is, the outer peripheral portion of the bonding surface, the receiving portion is recessed upward and can receive metal powder generated when the electrode is bonded to the metal pattern. The outer peripheral portion of the bonding surface of the electrode is bonded to the metal pattern, The housing portion is a groove portion formed along the outer periphery of the bonding surface of the electrode.

2. The semiconductor device according to claim 1, wherein A recessed portion recessed downward is formed at a portion of the metal pattern facing the bonding surface of the electrode.

3. The semiconductor device according to claim 2, wherein: A convex portion is formed in the recessed portion of the metal pattern. The convex portion protrudes upward and is received in the receiving portion of the electrode.

4. A semiconductor device comprising: an insulating substrate having an insulating layer and a metal pattern formed on the insulating layer; and an electrode bonded to the metal pattern, A receiving portion is formed on the inner peripheral side of the surface of the electrode that is bonded to the metal pattern, that is, the outer peripheral portion of the bonding surface, the receiving portion is recessed upward and can receive metal powder generated when the electrode is bonded to the metal pattern. The outer peripheral portion of the bonding surface of the electrode is bonded to the metal pattern, A capture portion is provided at a portion of the metal pattern that faces the outer periphery of the bonding surface of the electrode. The capture portion is made of a material different from that of the metal pattern and is capable of capturing the metal powder.

5. The semiconductor device according to any one of claims 1 to 4, wherein: A semiconductor element is also provided, the semiconductor element being bonded to the metal pattern. The semiconductor element includes a wide bandgap semiconductor.

6. A power conversion device, comprising: A main conversion circuit, comprising a semiconductor device according to any one of claims 1 to 5, wherein the main conversion circuit converts input power and outputs the converted power; a driving circuit that outputs a driving signal for driving the semiconductor device to the semiconductor device; as well as A control circuit outputs a control signal for controlling the drive circuit to the drive circuit.

7. A mobile object equipped with the power conversion device according to claim 6.

8. A method for manufacturing a semiconductor device, the semiconductor device comprising: an insulating substrate having an insulating layer and a metal pattern formed on the insulating layer; and an electrode bonded to the metal pattern, A receiving portion is formed on the inner peripheral side of the surface of the electrode that is bonded to the metal pattern, that is, the outer peripheral portion of the bonding surface, the receiving portion is recessed upward and can receive metal powder generated when the electrode is bonded to the metal pattern. The outer peripheral portion of the bonding surface of the electrode is bonded to the metal pattern, The method for manufacturing a semiconductor device comprises the following steps: Step (a), preparing the insulating substrate and the electrode; and Step (b), bringing the outer peripheral portion of the bonding surface of the electrode into contact with the metal pattern, and performing ultrasonic bonding while applying a load using an ultrasonic bonding tool, In the step (a), the housing portion is a groove portion formed along the outer peripheral portion of the bonding surface of the electrode, and a protrusion portion protruding downward is formed on the inner peripheral side of the groove portion of the electrode.

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