A semiconductor refrigeration sheet based on a metal substrate, a heat sink and a manufacturing method thereof

Abstract

The application relates to the technical field of semiconductor refrigeration, and provides a semiconductor refrigerating sheet based on a metal substrate, a heat sink and manufacturing methods thereof, wherein the semiconductor refrigerating sheet comprises: a first metal substrate, semiconductor particles, and an external metal layer; the semiconductor particles are fixedly arranged on one side of the first metal substrate through a welding metal layer; the external metal layer is welded on the side of the first metal substrate away from the semiconductor particles; and the acting force between the external metal layer and the first metal substrate and the acting force between the welding metal layer and the first metal substrate are mutually counteracted. The problems that the semiconductor particles are easily broken and damaged due to the deformation of the metal substrate in the production process of the metal substrate refrigerating sheet in the prior art are solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor refrigeration technology, and in particular to a semiconductor refrigeration plate and a heat sink based on a metal substrate and a manufacturing method thereof. Background Art

[0002] Semiconductor cooling, also known as electronic cooling or thermoelectric cooling, is a technology developed in the 1950s that bridges refrigeration and semiconductor technologies. It utilizes a PN junction composed of specialized semiconductor materials to form a thermocouple pair, generating the Peltier effect—a novel cooling method using direct current. Traditional semiconductor cooling chips utilize alumina ceramic substrates. Semiconductor P and N particles are placed crosswise on a copper strip on one ceramic substrate, then bonded to the other ceramic substrate. After reflow soldering, the cooling chip is formed.

[0003] However, the thermal conductivity, thickness, and weight of ceramic substrates are significantly different from those of metal substrates. Therefore, the industry currently prefers metal substrates as substrates for semiconductor cooling chips. Metal substrates have excellent thermal conductivity, allowing them to efficiently and effectively transfer the cooling energy generated by the front of the semiconductor and the heat generated by the back. However, the production process is not yet mature. After being welded to the semiconductor particles, the metal substrates will often deform. This deformed metal substrate will pull or compress the ends of the particles, causing the semiconductor particles to break and damage, resulting in extremely unstable cooling.

[0004] Therefore, the existing technology still needs to be improved and developed. Summary of the Invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of this application is to provide a semiconductor refrigeration plate, a heat sink and a manufacturing method thereof based on a metal substrate, so as to solve the problem in the prior art that the metal substrate refrigeration plate is deformed during the production process, causing the semiconductor particles to be easily broken and damaged.

[0006] The technical solution of this application is as follows:

[0007] In one aspect, the present application provides a semiconductor refrigeration plate based on a metal substrate, comprising: a first metal substrate,

[0008] Semiconductor particles, the semiconductor particles are fixedly arranged on one side of the first metal substrate through the welding metal layer;

[0009] an external metal layer welded to a side of the first metal substrate facing away from the semiconductor particles;

[0010] The acting force between the external metal layer and the first metal substrate and the acting force between the welding metal layer and the first metal substrate offset each other.

[0011] Optionally, the first metal substrate includes: a metal substrate body;

[0012] An insulating layer, the insulating layer is fixedly arranged on the metal substrate body;

[0013] The printed circuit is fixedly arranged on the insulating layer, and the semiconductor particles are fixedly connected to the printed circuit through the welding metal layer.

[0014] Optionally, the external metal layer and the welding metal layer have the same melting point and thermal expansion coefficient.

[0015] Optionally, the external metal layer is arranged corresponding to the position of the welding metal layer.

[0016] Optionally, the external metal layer and the welding metal layer are made of the same metal material.

[0017] Optionally, the semiconductor refrigeration chip further includes: an insulating sealant layer, which is disposed around the first metal substrate and forms a packaging cavity, and the semiconductor particles are located in the packaging cavity;

[0018] The connecting cable is electrically connected to the semiconductor particles and extends outside the packaging cavity.

[0019] On the other hand, the present application also provides a heat sink, comprising the above semiconductor cooling sheet based on the metal substrate;

[0020] The heat dissipation structure is arranged on the hot side of the semiconductor refrigeration plate.

[0021] Optionally, the heat dissipation structure includes: a heat dissipation metal substrate, the heat dissipation metal substrate being connected to the first metal substrate via an external metal layer;

[0022] and a plurality of heat dissipation fins connected to the heat dissipation metal substrate.

[0023] Optionally, the cross section of the heat dissipation fin is L-shaped or U-shaped.

[0024] In a third aspect, the present application provides a method for manufacturing a semiconductor refrigeration plate based on a metal substrate, which comprises the following steps:

[0025] Disposing a printed circuit on the metal substrate body to form a first metal substrate;

[0026] providing a soldering metal layer on the printed circuit of the first metal substrate;

[0027] Disposing an external metal layer on the pressure plate;

[0028] The semiconductor particles are placed on the welding metal layer of the first metal substrate, and the first metal substrate is pressurized by a pressurizing plate so that the external metal layer is attached to the first metal substrate.

[0029] Heating and welding to simultaneously melt and solidify the external metal layer on one side of the first metal substrate and the welding metal layer on the other side, so that the forces between the external metal layer and the first metal substrate and the forces between the welding metal layer and the first metal substrate cancel each other out;

[0030] The outer surface of the external metal layer is polished by a polishing tool to achieve a flatness reaching a preset value.

[0031] Beneficial effect: The present application proposes a semiconductor refrigeration plate, a heat sink and a manufacturing method thereof based on a metal substrate, wherein the semiconductor refrigeration plate based on the metal substrate welds an external metal layer on the side of the first metal substrate away from the semiconductor particles, so that the force between the external metal layer and the first metal substrate, and the force between the welding metal layer and the first metal substrate offset each other, so that the force on the first metal substrate is balanced, ensuring that the first metal substrate will not be severely deformed. The present application scheme is based on the problem that the thermal expansion coefficients of the metal substrate and the welding metal layer (such as tin) are inconsistent, which easily causes the metal substrate to be deformed by the force of the welding metal layer. The same type of external metal layer is added from the other side of the metal substrate. The positions of the metal layers on both sides can correspond and the areas can be similar, so that the forces on the inside and outside of the metal substrate are similar, eliminating or reducing the degree of deformation of the metal substrate, so that the semiconductor particles are no longer affected by the force generated by the bending of the metal substrate, thereby ensuring the quality, stability and service life of the semiconductor particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A cross-sectional view of the main structure of a semiconductor refrigeration plate based on a metal substrate according to the first embodiment of the present application;

[0033] Figure 2 A cross-sectional view of the structure of the first metal substrate of the semiconductor refrigeration plate based on the metal substrate according to the first embodiment of the present application;

[0034] Figure 3 A cross-sectional view of the complete structure of a semiconductor refrigeration plate based on a metal substrate according to the first embodiment of the present application;

[0035] Figure 4 This is an exploded view of a radiator according to the second embodiment of the present application;

[0036] Figure 5 This is a schematic structural diagram of a heat dissipation structure of a radiator according to the second embodiment of the present application;

[0037] Figure 6 This is a flowchart of a method for manufacturing a semiconductor refrigeration plate based on a metal substrate in Example 3 of the present application.

[0038] The numbers in the figure are: 1. semiconductor refrigeration chip; 10. first metal substrate; 11. metal substrate body; 12. insulation layer; 13. printed circuit; 14. insulation sealing layer; 15. connecting cable; 16. packaging cavity; 20. semiconductor particles; 30. welding metal layer; 40. external metal layer; 50. second metal substrate; 6. heat dissipation structure; 60. heat dissipation metal substrate; 61. heat dissipation fins; 62. connection part; 63. heat dissipation part. DETAILED DESCRIPTION

[0039] This application provides a semiconductor cooling plate and heat sink based on a metal substrate, and a method for manufacturing the same. To make the objectives, technical solutions, and effects of this application more clear and explicit, the application is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.

[0040] Because the ceramic substrate of the cooling plate is replaced with a metal substrate, typically copper, the metal substrate will inevitably bend after welding. Traditional processes and structures are unable to eliminate this bending stress. Therefore, technicians in this field typically use pressure to flatten the metal plate during the manufacturing process. However, as the cooling plate returns from the soldering temperature to below the melting point of the solder and the solder solidifies, the copper substrate shrinks relatively little, typically presenting a convex surface on the outer surface. This exerts additional forces on both the solder and the semiconductor particles on the inner surface, typically manifesting as tension. When the metal substrates on either side of the semiconductor particles (the upper and lower substrates) are made of the same material and have the same thickness, the tension on both sides is almost identical, with opposite forces acting oppositely. From the perspective of the entire cooling plate, the metal substrates on both sides appear to be equally stressed. Existing flattening processes can also produce a relatively flat metal surface. However, analysis of the forces acting on the semiconductor particles within the cooling plate reveals that they are subjected to tension at both ends, with the tension on the inner semiconductor particles being doubled. During transportation, production, and use, semiconductor refrigeration chips are subject to external forces such as collisions and pressure. These forces, superimposed on the semiconductor particles, can easily disrupt the original force balance and cause particle breakage. Consequently, the industry generally believes that metal substrates are prone to deformation, resulting in insufficient internal structural stability. This is because the metal bends and deforms under external forces, squeezing the semiconductor particles and causing them to be easily damaged. In essence, the particles are constantly subject to severe stress, and even the slightest external force can cause mechanical damage. Existing semiconductor refrigeration chip production processes often attempt to improve the metal shape through shaping to prevent deformation and squeezing of the internal semiconductor particles. However, these improvements have not been directed in the right direction, and products using metal substrates in refrigeration chips have been suboptimal.

[0041] During the manufacturing process of semiconductor refrigeration chips with metal substrates, the metal substrate needs to be heated to melt the soldering material (usually solder) when soldering it to the semiconductor. After soldering, as the semiconductor particles in the refrigeration chip and the soldering tin on the substrate cool, the inconsistent expansion coefficients of the metal substrate and soldering materials cause the soldering material to exert a certain pulling force on the metal substrate, causing the metal substrate to bend. Copper and aluminum substrates are more susceptible to deformation than ceramic substrates, but the metal's restoring force exerts a greater relative force on the soldered particles. If the forces acting on the metal substrate are all directed outward, the particles are pulled at both ends. If the forces acting on the metal substrate are all directed inward, the particles are compressed at both ends. If the forces acting on the metal substrates are inconsistent, the particles will bulge in the direction of the stronger force. As can be seen from the above, if the internal forces are not eliminated, the particles will continue to be subjected to strong forces. Moreover, during use, the particles are prone to fracture and damage due to aging of the soldering metal or external forces.

[0042] This application is based on the fact that the thermal expansion coefficients of the metal substrate and the soldering metal (such as tin) are inconsistent. The same soldering metal is added from the other side with corresponding positions and similar areas, so that the forces on the inside and outside of the metal substrate are similar, eliminating or reducing the degree of deformation of the metal substrate, so that the semiconductor particles are no longer affected by the forces generated by the bending of the metal substrate, thereby ensuring the quality, stability and service life of the semiconductor particles.

[0043] Example 1

[0044] like Figure 1 As shown, to solve the above problems, this embodiment proposes that the present application provides a semiconductor refrigeration plate 1 based on a metal substrate, comprising: a first metal substrate 10, semiconductor particles 20, and an external metal layer 40. For external structural description, the first metal substrate 10 is set to a square shape. To improve thermal conductivity, the first metal substrate 10 can be a copper substrate, and an aluminum substrate can also be used. The semiconductor particles 20 are fixedly arranged on one side of the first metal substrate 10 by the external metal layer 40, which is the inner side. The external metal layer 40 is welded to the side of the first metal substrate 10 facing away from the semiconductor particles 20, which is the outer side. The external metal layer 40 itself has a welding function, so the external metal layer 40 can be directly welded to the outer side of the first metal layer. By arranging the external metal layer 40 on the outer side of the first metal substrate 10, the forces between the external metal layer 40 and the first metal substrate 10 and the forces between the welding metal layer 30 and the first metal substrate 10 are offset.

[0045] In this embodiment, an external metal layer 40 is welded to the side of the first metal substrate 10 facing away from the semiconductor particles 20, thereby offsetting the forces between the external metal layer 40 and the first metal substrate 10 and the forces between the welding metal layer 30 and the first metal substrate 10, thereby balancing the forces on the first metal substrate 10 and ensuring that the first metal substrate 10 does not severely deform. This application solution is based on the problem that the thermal expansion coefficients of the metal substrate and the welding metal layer 30 (such as tin) are inconsistent, which can easily cause the metal substrate to deform under the force of the welding metal layer 30. By adding the same type of external metal layer 40 to the other side of the metal substrate, the positions of the metal layers on both sides can correspond and the areas can be similar, so that the forces on the inside and outside of the metal substrate are similar, eliminating or reducing the degree of deformation of the metal substrate, so that the semiconductor particles 20 are no longer subjected to the forces generated by the bending of the metal substrate, thereby ensuring the quality, stability and service life of the semiconductor particles 20.

[0046] like Figure 1 、 Figure 2 As shown, the first metal substrate 10 in this embodiment specifically includes a metal substrate body 11, an insulating layer 12, and a printed circuit 13. The insulating layer 12 is fixedly mounted on the metal substrate body 11, and the printed circuit 13 is fixedly mounted on the insulating layer 12. The semiconductor particles 20 are fixedly connected to the printed circuit 13 via a soldering metal layer 30. The printed circuit 13 in this embodiment can be formed in a manner similar to that of a PCB. The insulating layer 12 is very thin, preventing electrical conduction between the printed circuit 13 and the first metal substrate 10. By energizing the semiconductor particles 20 through the printed circuit 13, one end of the semiconductor particles 20 generates heat and dissipates it. To enhance the cooling effect, one side of the first metal substrate 10 is typically designated as the heat dissipation side. Heat is dissipated promptly through the first metal substrate 10, allowing the side opposite the first metal substrate 10 to cool more effectively and reach a lower temperature. To facilitate the conduction of low temperatures, the other end of the semiconductor particles 20 can be connected to a second metal substrate 50, allowing for faster heat conduction. If the second metal substrate 50 is also connected to the semiconductor particles 20 by welding, then the external metal layer 40 is correspondingly welded on the outer surface of the second metal substrate 50 to simultaneously apply force to both sides of the second metal substrate 50, thereby making the metal substrate less likely to deform and greatly reducing the squeezing of the internal semiconductor particles 20.

[0047] In this embodiment, the external metal layer 40 and the solder metal layer 30 have the same melting point and thermal expansion coefficient. Using metal materials with the same melting point and thermal expansion coefficient, or similar metal materials, can ensure that the forces acting on the inner and outer sides are equal, thus balancing the forces acting on the first metal substrate 10. This protects the semiconductor particles 20 from the forces generated by the bending of the first metal substrate 10, thereby ensuring the quality of the semiconductor particles 20.

[0048] In this embodiment, the external metal layer 40 is positioned correspondingly to the soldering metal layer 30. By positioning the external metal layer 40 and the soldering metal layer 30 in a corresponding manner, the locations of the forces acting on the inner and outer sides correspond and their areas are similar. This balances the forces acting on the first metal substrate 10, freeing the semiconductor particles 20 from the forces generated by the bending of the first metal substrate 10, thereby ensuring the quality of the semiconductor particles 20.

[0049] In this embodiment, the external metal layer 40 and the welding metal layer 30 are made of the same metal material. In this embodiment, both the external metal layer 40 and the welding metal layer 30 can be made of tin, which facilitates welding and ensures that the forces on both sides of the first metal substrate 10 are equal.

[0050] like Figure 2 、 Figure 3 As shown, the semiconductor refrigeration plate 1 in this embodiment also includes: an insulating sealing layer 14, and a connecting cable 15. The insulating sealing layer 14 is arranged around the first metal substrate 10 and forms a packaging cavity 16, and the semiconductor particles 20 are located in the packaging cavity 16; the insulating sealing layer 14 surrounds the inner side of the edge of the first metal substrate 10 to protect the semiconductor particles 20 inside. If a second metal substrate 50 is provided, the insulating sealing layer 14 fills the edge gap between the first metal substrate 10 and the second metal substrate 50, and a packaging cavity is formed between the first metal substrate 10 and the second metal substrate 50. The connecting cable 15 is electrically connected to the semiconductor particles 20 and extends outside the packaging cavity; by soldering the connecting cable 15 to the printed circuit 13 and extending it to the outside to connect to the power supply, power supply to the semiconductor particles 20 is achieved.

[0051] Example 2

[0052] like Figure 4 、 Figure 5As shown, based on the same concept, the present application also provides a heat sink, comprising a semiconductor refrigeration plate 1 based on a metal substrate as in the first embodiment; and a heat dissipation structure 6. The heat dissipation structure 6 is arranged on the hot side of the semiconductor refrigeration plate 1. The first metal substrate 10 in this embodiment is the hot side of the semiconductor refrigeration plate 1. The heat dissipation mechanism dissipates heat from the first metal substrate 10, so that the heat conducted to the first metal substrate 10 by the semiconductor particles 20 is quickly dissipated, and the other end of the semiconductor particles 20 can achieve more stable cooling, greater cooling capacity, lower cooling temperature, and better cooling effect.

[0053] like Figure 5 As shown, the heat dissipation structure 6 in this embodiment includes: a heat dissipation metal substrate 60, and a plurality of heat dissipation fins 61. The heat dissipation metal substrate 60 is connected to the first metal substrate 10 through an external metal layer 40, and a plurality of heat dissipation fins 61 are connected to the heat dissipation metal substrate 60. In actual applications, the first metal substrate 10 of the semiconductor refrigeration plate 1 can be welded and fixed to the heat dissipation metal substrate 60 through the external metal layer 40. The spacing between the heat dissipation fins 61 is fixed by a clamp, and one side of the heat dissipation metal substrate 60 is parallel to the outer surface of the first metal substrate 10, and is fixed to the first metal substrate 10 by the external metal layer 40, and is completed at the same time as welding with the semiconductor particles 20 to form an integrated heat dissipation module.

[0054] In addition, the heat dissipation structure 6 can only include heat dissipation fins 61, the heat dissipation fins 61 are fixed at a certain distance by a clamp, one side of the heat dissipation fins 61 is parallel to the outer surface of the first metal substrate 10, and is fixed by the external metal layer 40 and the first metal substrate 10, and is completed at the same time as the semiconductor particles 20 are welded to form an integrated heat dissipation module.

[0055] The heat dissipation fins 61 are provided to greatly increase the heat dissipation area, thereby facilitating heat dissipation. In addition, a fan can be used to assist in heat dissipation, so that the heat on the first metal substrate 10 can be dissipated more quickly.

[0056] like Figure 5 As shown, in this embodiment, the cross-section of the heat dissipation fin 61 is L-shaped or U-shaped. In the specific structure, the heat dissipation fin 61 has a connecting portion 62 and a heat dissipation portion 63, and the connecting portion 62 and the heat dissipation portion 63 can both be set as a sheet body. The connecting portion 62 is parallel to the outer side surface of the first metal substrate 10, and the heat dissipation portion 63 is vertically arranged on the connecting portion 62. One heat dissipation portion 63 is connected to the connecting portion 62 to form an L-shaped heat dissipation fin, and two heat dissipation portions 63 are connected to the connecting portion 62 to form a U-shaped heat dissipation fin. Moreover, in the horizontal plane, the heat dissipation portion 63 is arranged obliquely to the center line of the first metal substrate 10. The heat dissipation fin 61 with this structure can accelerate the gas flow, thereby achieving a better heat dissipation effect.

[0057] Example 3

[0058] like Figure 6 As shown, this embodiment provides a method for manufacturing a semiconductor refrigeration chip based on a metal substrate, which is used to manufacture the semiconductor refrigeration chip based on a metal substrate in Example 1; wherein, the method includes the following steps:

[0059] Step S100: arranging a printed circuit on a metal substrate body to form a first metal substrate.

[0060] Step S200: providing a soldering metal layer on the printed circuit of the first metal substrate.

[0061] In a specific process, the welding metal layer is made of solder, which can be coated on a position on a printed circuit for connecting with semiconductor particles.

[0062] Step S300: Disposing an external metal layer on the pressure plate.

[0063] In the specific process, tin paste is applied on the pressure plate or thin tin foil is laid to control the thickness and area of ​​the external metal layer so that the position of the external metal layer corresponds to that of the welding metal layer and the area is similar.

[0064] Step S400: placing semiconductor particles at the welding metal layer position of the first metal substrate, and applying pressure to the first metal substrate through a pressure plate so that the external metal layer adheres to the first metal substrate.

[0065] Step S500 , heating and welding, so that the external metal layer on one side of the first metal substrate and the welding metal layer on the other side are simultaneously melted and solidified, so that the force between the external metal layer and the first metal substrate and the force between the welding metal layer and the first metal substrate offset each other.

[0066] Step S600: polishing the outer surface of the external metal layer with a polishing tool to make the flatness reach a preset value.

[0067] During the production process, tin paste is applied to the pressure plate or thin tin foil is laid to control the thickness and area. In the process of placing the semiconductor particles on the first metal substrate for pressure welding, the tin paste or tin foil on the outside of the first metal substrate will melt or solidify synchronously with the tin paste on the inside, thereby ensuring that the forces acting on the first metal substrate cancel each other out and ensuring the flatness of the first metal substrate. In addition, the materials and positions of the inner and outer metal layers of the first metal substrate are consistent. During use, the first metal substrate can also be guaranteed not to be affected by it and generate additional stress, thereby ensuring the stability of the cooling plate structure. Moreover, adding a layer of soft metal layer (solder layer) to the outside of the pin substrate can increase the buffering force and pressure resistance of the copper substrate, and further protect the impact resistance of the cooling plate mechanical structure. By polishing the external metal layer on the outside, the flatness of the semiconductor cooling plate can be guaranteed, which facilitates the application of the semiconductor cooling plate to various radiator structures.

[0068] In summary, the present application proposes a semiconductor refrigeration plate, a heat sink and a manufacturing method thereof based on a metal substrate, wherein the semiconductor refrigeration plate based on a metal substrate welds an external metal layer on the side of the first metal substrate facing away from the semiconductor particles, so that the force between the external metal layer and the first metal substrate and the force between the welded metal layer and the first metal substrate offset each other, so that the force on the first metal substrate is balanced, ensuring that the first metal substrate will not be severely deformed, eliminating or reducing the degree of deformation of the metal substrate, so that the semiconductor particles are no longer affected by the force generated by the bending of the metal substrate, thereby ensuring the quality, stability and service life of the semiconductor particles.

[0069] It should be understood that the application of this application is not limited to the above examples. For ordinary technicians in this field, they can make improvements or changes based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A semiconductor refrigeration sheet based on a metal substrate, characterized in that: include: a first metal substrate; Semiconductor particles, the semiconductor particles are fixedly disposed on one side of the first metal substrate via a welding metal layer; an external metal layer, the external metal layer being welded to a side of the first metal substrate facing away from the semiconductor particles; The acting force between the external metal layer and the first metal substrate and the acting force between the welding metal layer and the first metal substrate cancel each other out; The external metal layer and the welding metal layer have the same melting point and thermal expansion coefficient, the external metal layer and the welding metal layer are arranged in a corresponding position, and the external metal layer and the welding metal layer are made of the same metal material; By heating and welding, the external metal layer and the welding metal layer on the other side are simultaneously melted and then solidified.

2. The semiconductor refrigeration sheet based on a metal substrate according to claim 1, characterized in that: The first metal substrate includes: a metal substrate body; an insulating layer, the insulating layer being fixedly disposed on the metal substrate body; A printed circuit is fixedly arranged on the insulating layer, and the semiconductor particles are fixedly connected to the printed circuit through the welding metal layer.

3. The semiconductor refrigeration sheet based on a metal substrate according to claim 1, characterized in that: The semiconductor refrigeration chip further includes: an insulating sealant layer, which is disposed around the first metal substrate and forms a packaging cavity, and the semiconductor particles are located in the packaging cavity; A connecting cable is electrically connected to the semiconductor particles and extends outside the packaging cavity.

4. A radiator, characterized in that: A semiconductor refrigeration sheet based on a metal substrate as described in any one of claims 1 to 3; A heat dissipation structure is arranged on the hot surface side of the semiconductor refrigeration plate.

5. The radiator according to claim 4, characterized in that The heat dissipation structure comprises: a heat dissipation metal substrate, the heat dissipation metal substrate being connected to the first metal substrate via the external metal layer; and a plurality of heat dissipation fins, wherein the plurality of heat dissipation fins are connected to the heat dissipation metal substrate.

6. The radiator according to claim 5, characterized in that The cross section of the heat dissipation fin is L-shaped or U-shaped.

7. A method for manufacturing a semiconductor refrigeration chip based on a metal substrate, characterized in that: Including steps: Disposing a printed circuit on the metal substrate body to form a first metal substrate; providing a soldering metal layer on the printed circuit of the first metal substrate; Disposing an external metal layer on the pressure plate; The semiconductor particles are placed on the welding metal layer of the first metal substrate, and the first metal substrate is pressurized by a pressurizing plate so that the external metal layer is attached to the first metal substrate. Heating and welding to simultaneously melt and solidify the external metal layer on one side of the first metal substrate and the welding metal layer on the other side, so that the forces between the external metal layer and the first metal substrate and the forces between the welding metal layer and the first metal substrate cancel each other out; Grind the outer surface of the external metal layer with a grinding tool to achieve a preset flatness value; The external metal layer and the welding metal layer have the same melting point and thermal expansion coefficient. The external metal layer and the welding metal layer are arranged at corresponding positions. The external metal layer and the welding metal layer are made of the same metal material.

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