A method for manufacturing a display panel, and a display device
By forming a metal layer with a barrier structure on the substrate during the manufacturing process of the display panel, the anode layer is disconnected and an auxiliary electrode layer is formed on the barrier structure, thus solving the problem of auxiliary electrode breakage and improving product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2023-02-27
- Publication Date
- 2026-05-15
AI Technical Summary
In large-size OLED top-emitting display panels, the formation of auxiliary electrodes is prone to breakage, leading to a decrease in product yield.
A metal layer is formed on a substrate. The metal layer includes a partition structure, which includes a flat region and a raised region surrounding the flat region. The anode layer is disconnected during the formation of the anode layer through the partition structure, and an auxiliary electrode layer is formed on the partition structure to avoid high voltage impact.
This reduces the breakage of the auxiliary electrode layer and improves the product yield of the display panel.
Smart Images
Figure CN116193895B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of display technology, and more specifically, to a method for manufacturing a display panel and a display device. Background Technology
[0002] Recently, large-size OLED (Organic Light-Emitting Diode) products have gradually become a new growth hotspot due to their high contrast and self-emissive characteristics. For large-size OLEDs, top-emitting structures have a higher aperture ratio and a higher pixel count compared to bottom-emitting structures.
[0003] In the design of ultra-large OLED top-emitting structure display products, auxiliary electrode technology must be used to reduce the voltage drop of the thin-film transistor cathode. Therefore, the method of connecting the cathode to the auxiliary electrode has become an important technology.
[0004] Currently, the methods used to form auxiliary electrodes are prone to breakage, leading to a decrease in product yield. Summary of the Invention
[0005] This application provides a method for manufacturing a display panel, which aims to reduce the occurrence of auxiliary electrode breakage and improve product yield.
[0006] The first aspect of this application provides a method for manufacturing a display panel, the method comprising:
[0007] Provide substrates;
[0008] A metal layer is formed on one side of the substrate. The metal layer includes at least one partition structure. The partition structure includes a flat region and a plurality of raised regions surrounding the flat region. The distance from the side of the raised regions away from the substrate to the substrate is greater than the distance from the side of the flat regions away from the substrate to the substrate.
[0009] An anode layer is formed on the side of the metal layer opposite to the substrate, and an auxiliary electrode layer is formed on the side of the partition structure opposite to the substrate. The orthographic projection of the anode layer on the substrate and the orthographic projection of the auxiliary electrode layer on the substrate do not overlap.
[0010] Optionally, the partition structure includes a first sidewall and a second sidewall in the raised area, wherein one side of the first sidewall is connected to the flat area and the other side is connected to the second sidewall, and the distance from the second sidewall to the substrate is greater than the distance from the flat area to the substrate.
[0011] Optionally, prior to the step of forming a metal layer on one side of the substrate, the fabrication method further includes:
[0012] A planarization layer is formed on one side of the substrate, the planarization layer including a plurality of protrusion structures, and the positions of the protrusion structures correspond to the positions of the protrusion regions of the partition structure.
[0013] Optionally, after the step of forming a metal layer on one side of the substrate, the fabrication method further includes:
[0014] The raised structure of the planar layer is etched using an etching process.
[0015] Optionally, the anode and the auxiliary electrode are disposed in the same layer.
[0016] Optionally, the metal layer includes a plurality of partition structures, and each partition structure has an auxiliary electrode layer formed on the side opposite to the substrate.
[0017] Optionally, the thickness of the anode layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
[0018] Optionally, the thickness of the auxiliary electrode layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
[0019] Optionally, the thickness of the metal layer is greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms.
[0020] Optionally, the material of the metal layer includes Al, Mo, and ITO.
[0021] Optionally, the thickness of the planarization layer is greater than or equal to 2000 nm and less than or equal to 3500 nm.
[0022] Optionally, after forming an anode layer on the side of the metal layer opposite to the substrate and forming an auxiliary electrode layer on the side of the partition structure opposite to the substrate, the fabrication method further includes:
[0023] A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer and the auxiliary electrode layer opposite to the substrate.
[0024] The cathode layer is metal-connected to the auxiliary electrode.
[0025] Optionally, the substrate includes a thin-film transistor substrate.
[0026] Optionally, prior to the step of forming a planarization layer on one side of the substrate, the fabrication method further includes:
[0027] A passivation layer is formed on one side of the substrate.
[0028] A second aspect of this application provides a display device, including a display panel, which is prepared by the method for preparing a display panel provided in the first aspect of this application.
[0029] Beneficial effects:
[0030] This application provides a method for manufacturing a display panel and a display device. The method involves forming a metal layer on a substrate, the metal layer including at least one partition structure, wherein the partition structure includes a flat region and a plurality of raised regions surrounding the flat region. Then, an anode layer and an auxiliary electrode layer are formed on the side of the metal layer and the partition structure opposite to the substrate. Thus, during the manufacturing of the display panel, the anode layer can be broken at the raised region using the partition structure during the anode layer formation process, and the auxiliary electrode layer can be formed on the partition structure. In this manufacturing process, the partition structure reduces the occurrence of breakage in the auxiliary electrode layer, improving product yield. Attached Figure Description
[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0032] Figure 1 This is a flowchart illustrating the steps of a method for manufacturing a display panel according to an embodiment of this application;
[0033] Figure 2 This is a schematic diagram of the planar structure of the substrate and metal layer fabrication in a method for fabricating a display panel according to an embodiment of this application.
[0034] Figure 3 yes Figure 2 Schematic diagram of the structure at section C-C';
[0035] Figure 4 This is a schematic diagram of the structure of the substrate fabrication in a method for preparing a display panel according to an embodiment of this application.
[0036] Figure 5 This is a schematic diagram of the structure in which the planarization layer and the metal layer are fabricated in a method for manufacturing a display panel according to an embodiment of this application.
[0037] Explanation of reference numerals in the attached figures: 20, substrate; 201, substrate; 202, light-shielding layer; 203, buffer layer; 204, active layer; 205, gate insulating layer; 206, gate; 207, interlayer dielectric layer; 208, source / drain electrode; 209, passivation layer; 30, metal layer; 301, isolation structure; 3011, first sidewall; 3012, second sidewall; 3013, third sidewall; 40, anode layer; 50, auxiliary electrode layer; 60, protrusion structure; A, flat region; B, protrusion region. Detailed Implementation
[0038] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0039] In related technologies, the fabrication process for display panels typically involves first preparing a planarization layer, then etching a passivation layer to pattern it, followed by depositing a metal layer, and finally fabricating the auxiliary electrode and anode. However, in these technologies, the auxiliary electrode is an I-shaped structure, fabricated using a wet etching process. This process requires the use of brushes, high-pressure water washing, and air knife drying, which makes the tips of the I-shaped auxiliary electrode layer prone to breakage, resulting in a lower product yield.
[0040] In view of this, embodiments of this application propose a method for manufacturing a display panel and a display device. A metal layer is formed on a substrate, the metal layer including at least one partition structure, wherein the partition structure includes a flat region and a plurality of raised regions surrounding the flat region. Then, an anode layer and an auxiliary electrode layer are formed on the side of the metal layer and the partition structure opposite to the substrate. Thus, during the manufacturing of the display panel, the anode layer can be broken at the raised region using the partition structure during the anode layer formation process, and an auxiliary electrode layer can be formed on the partition structure. In this manufacturing process, the partition structure reduces the occurrence of breakage in the auxiliary electrode layer, improving product yield.
[0041] Figure 1 A flowchart illustrating the steps of a method for fabricating a display panel is shown. (Refer to...) Figure 1 The image shows a method for manufacturing a display panel according to an embodiment of this application. The manufacturing method includes:
[0042] Step 101: Provide a substrate 20.
[0043] Specifically, refer to Figure 4As shown, the substrate 20 may include a thin film transistor (TFT) substrate. The TFT substrate, from bottom to top, may include a substrate 201, a light-shielding layer 202, a buffer layer 203, an active layer 204, a gate insulating layer 205, a gate 206, an interlayer dielectric layer 207, and source / drain electrodes 208, stacked together.
[0044] The material of the substrate 201 may include glass, and the thickness of the substrate 201 may be greater than or equal to 50 μm and less than or equal to 1000 μm; for example, the thickness of the substrate 201 may be 50 μm, 100 μm, 200 μm, 500 μm, 1000 μm, etc., and those skilled in the art can select according to actual needs.
[0045] The light-shielding layer 202 is disposed on the substrate. The light-shielding layer 202 can be deposited by sputtering process. After photolithography and wet etching processes, the light-shielding layer 202 is patterned. Then, the photoresist on the surface of the light-shielding layer 202 is peeled off to complete the fabrication of the light-shielding layer 202.
[0046] The buffer layer 203 can be deposited using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The material of the buffer layer 203 can include one or more of SiNx, SiOx, or SiOxNy. The thickness of the buffer layer 203 can be greater than or equal to 150 nm and less than or equal to 500 nm. For example, the thickness of the buffer layer 203 can be 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, etc., and those skilled in the art can select the appropriate thickness according to actual needs.
[0047] The active layer 204 can be formed on the side of the buffer layer 203 away from the substrate by sputtering process. Then, the active layer 204 is patterned by photolithography and wet etching processes, and the photoresist on the surface of the active layer 204 is removed. The oxide of the active layer 204 can include amorphous oxides such as IGZO, ZnON, and ITZO.
[0048] The gate insulating layer 205 can be formed on the side of the active layer 204 away from the buffer layer 203 using a CVD (Chemical Vapor Deposition) process. The gate 206 can be formed on the side of the gate insulating layer 205 away from the active layer using a sputtering process. The gate 206 is then patterned using photolithography and wet etching processes, while retaining the photoresist without stripping it. Using the photoresist on the gate 206 as a mask, the gate insulating layer 205 is patterned using a dry etching process. The material of the gate 206 can include Al, Mo, Cr, Cu, Ti, etc. The thickness of the gate 206 can be greater than or equal to 200 nm and less than or equal to 1000 nm. For example, the thickness of the gate 206 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs.
[0049] Before fabricating the interlayer dielectric layer 207, any one of NH3, N2, or H2 can be used to conduct the oxide of the exposed active layer 204 to reduce the ohmic contact resistance with the source / drain electrodes 208. Subsequently, the interlayer dielectric layer 207 can be deposited using a PECVD process, and the ILD and CNT hole patterns can be defined using a photolithography process. The contact vias between the source / drain electrodes 208 and the active layer 204 can be obtained using a dry etching process. The material of the interlayer dielectric layer 207 can include SiNx or SiOx. Furthermore, the interlayer dielectric layer 207 can be a single-layer film structure or a multilayer film structure.
[0050] The source / drain electrode 208 can be formed on the side of the interlayer dielectric layer 207 away from the gate 206 by sputtering, and patterned by photolithography and wet etching processes. The material of the source / drain electrode 208 can include Al, Mo, Cr, Cu, Ti, etc.; the thickness of the source / drain electrode 208 can be greater than or equal to 200 nm and less than or equal to 1000 nm. For example, the thickness of the source / drain electrode 208 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs.
[0051] Step 102: A metal layer 30 is formed on one side of the substrate 20. The metal layer 30 includes at least one partition structure 301. The partition structure 301 includes a flat region A and a plurality of raised regions B surrounding the flat region A. The distance from the side of the raised region B away from the substrate 20 to the substrate 20 is greater than the distance from the side of the flat region A away from the substrate 20 to the substrate 20.
[0052] Specifically, refer to Figure 2 and Figure 3As shown, the metal layer 30 can be formed on the substrate 20 by a sputtering process. The material of the metal layer 30 may include Al, Mo, and ITO, etc.; in this embodiment, the material of the metal layer 30 is ITO. The thickness of the metal layer 30 can be greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms. For example, the thickness of the metal layer 30 can be 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, etc., and those skilled in the art can select according to actual needs.
[0053] Reference Figure 2 As shown, the partition structure 301 includes a flat region A and multiple raised regions B. The raised regions B surround the flat region A. It can be understood that the raised regions B separate the flat region A from the remaining metal layer 30 outside the flat region A. Alternatively, the metal layer 30 can be understood as including partition regions and non-partition regions, with the partition structure 301 formed in the partition regions. In actual production, multiple partition structures 301 are generally provided, and the metal layer 30 also includes multiple independent partition regions, with each partition region including one partition structure 301.
[0054] Furthermore, referring to Figure 3 As shown, the distance from the side of the raised region B away from the substrate 20 to the substrate 20 is greater than the distance from the side of the flat region A away from the substrate 20 to the substrate 20. That is, the height of the raised region B in the display panel is greater than the height of the flat region A. In this way, the flat region A can be separated from the non-isolated region of the metal layer 30.
[0055] Specifically, refer to Figure 3 As shown, the partition structure 301 includes a first sidewall 3011 and a second sidewall 3012 in the raised region B. One side of the first sidewall 3011 is connected to the flat region A, and the other side is connected to the second sidewall 3012. The distance from the side of the second sidewall 3012 away from the substrate 20 to the substrate 20 is greater than the distance from the side of the flat region A away from the substrate 20 to the substrate 20. That is, the height of the second sidewall 3012 in the display panel is greater than the height of the flat region A, and there is no connection between the second sidewall 3012 and the metal layer 30 in the non-partitioned region. Thus, during the subsequent formation of the anode layer 40, the anode layer 40 will be disconnected at the location of the raised region B.
[0056] The following embodiments of this application will describe the formation of the partition structure 301.
[0057] Before the step of forming a metal layer 30 on one side of the substrate 20, the fabrication method further includes:
[0058] A planarization layer is formed on one side of the substrate 20. The planarization layer includes a plurality of protrusions 60, and the positions of the protrusions 60 correspond to the positions of the protrusion regions B of the partition structure 301.
[0059] Specifically, the planarization layer material may include resin or other organic materials. The thickness of the planarization layer may be greater than or equal to 2000 nm and less than or equal to 3500 nm. For example, the thickness of the planarization layer may be 2000 nm, 2500 nm, 3000 nm, 3500 nm, etc., and those skilled in the art can select according to actual needs.
[0060] Reference Figure 5 As shown, during the fabrication process, the positions of the raised regions B of the partition structure 301 can be pre-defined on the substrate. During the formation of the planarization layer, the planarization layer is patterned using an etching process, forming the raised structure 60 at the raised region positions. Subsequently, a metal layer 30 is formed on the side of the planarization layer facing away from the substrate 20. The metal layer 30 then forms the shape of the raised region B of the partition structure 301 at the raised structure 60 positions.
[0061] Simultaneously, after the step of forming a metal layer 30 on one side of the substrate 20, the fabrication method further includes:
[0062] The raised structure 60 of the planar layer is etched using an etching process.
[0063] Specifically, after forming the metal layer 30, the protrusion structure 60 needs to be etched to form the protrusion region B of the partition structure 301. During etching, a portion of the metal layer 30 at the location of the protrusion region B needs to be etched away first. The etching process can be a dry etching ashing process.
[0064] Reference Figure 5 As shown in the embodiment of this application, the protruding structure 60 is trapezoidal in shape, with one sidewall of the trapezoid adjacent to the flat area A and the other sidewall adjacent to the outer metal layer 30. Therefore, the metal layer 30 at the position of the protruding structure 60 is also a trapezoidal structure. The trapezoidal structure includes a first sidewall 3011, a second sidewall 3012, and a third sidewall 3013. The first sidewall 3011 is connected to the flat area A, the second sidewall 3012 is disposed between the first sidewall 3011 and the third sidewall 3013, and the third sidewall 3013 is connected to the metal layer 30 of the outer non-isolated area. During the etching process, the third sidewall 3013 needs to be etched away first, and then the protruding structure 60 located in the trapezoidal structure needs to be etched away, so that the protruding area B of the isolation structure 301 can be formed.
[0065] Step 103: An anode layer 40 is formed on the side of the metal layer 30 away from the substrate 20, and an auxiliary electrode layer 50 is formed on the side of the partition structure 301 away from the substrate 20. The orthographic projection of the anode layer 40 on the substrate 20 and the orthographic projection of the auxiliary electrode layer 50 on the substrate 40 do not overlap.
[0066] Specifically, refer to Figure 3 As shown, the anode layer 40 and the auxiliary electrode layer 50 can be formed by a sputtering process. The material of the anode layer 40 may include Al, Mo, ITO, etc. The thickness of the anode layer 40 can be greater than or equal to 200 nm and less than or equal to 1000 nm. For example, the thickness of the anode layer 40 can be 200 nm, 300 nm, 500 nm, 800 nm, 1000 nm, etc., and those skilled in the art can select according to actual needs.
[0067] Furthermore, in this embodiment, the anode layer 40 and the auxiliary electrode layer 50 are disposed in the same layer, meaning that the anode layer 40 and the auxiliary electrode layer 50 are made of the same material and are completed in the same step using the same process. It can be understood that the anode layer 40 is formed in the non-isolated region of the metal layer 30, while the auxiliary electrode layer 50 is formed on the isolation structure 301 in the isolated region; the anode layer 40 and the auxiliary electrode layer 50 differ only in their positional relationship.
[0068] Specifically, during the preparation of the anode layer 40 and the auxiliary electrode layer 50, the partition structure 301 can cut off the anode layer 40 (that is, the anode layer 40 will be broken at the protruding area B of the partition structure 301, so that the anode layer 40 covering the partition structure 301 serves as the auxiliary electrode layer 50), so that the anode layer 40 cannot completely cover the partition structure 301, thereby allowing the auxiliary electrode layer 50 to play an auxiliary conductive role.
[0069] Meanwhile, when the metal layer 30 includes a plurality of partition structures 301, an auxiliary electrode layer 50 is formed on the side of each partition structure 301 facing away from the substrate 20.
[0070] Through the above-described preparation method of this application embodiment, the anode layer 40 is cut off and the auxiliary electrode layer 50 is formed by the partition structure 301, which simplifies the preparation steps of the auxiliary electrode layer 50. At the same time, the partition structure 301 adopts a dry etching and ashing process, which avoids high pressure impact, making the auxiliary electrode layer 50 less prone to breakage and improving the product yield.
[0071] Furthermore, in this embodiment of the application, before the step of forming a metal layer 30 on one side of the substrate 20, the preparation method further includes:
[0072] A passivation layer 209 is formed on one side of the substrate 20.
[0073] Specifically, refer to Figure 4 As shown, a passivation layer 209 covers the substrate 20. The passivation layer 209 can be deposited using a CVD process, and the material of the passivation layer 209 can include SiO2, SiON, and SiNx, etc. The patterning of the passivation layer 209 can be accomplished using photolithography and etching processes. The metal layer 30 is connected to the source / drain electrodes 208 through vias penetrating the passivation layer 209 (not shown in the figure).
[0074] After forming an anode layer 40 on the side of the metal layer 30 facing away from the substrate 20, and forming an auxiliary electrode layer 50 on the side of the partition structure 301 facing away from the substrate 20, the fabrication method further includes:
[0075] A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer 40 and the auxiliary electrode layer 50 away from the substrate.
[0076] The cathode layer is metal-connected to the auxiliary electrode 50.
[0077] Specifically, the light-emitting layer may include a hole injection layer, a hole transport layer, a light-emitting material layer and an electron transport layer stacked sequentially from bottom to top, wherein the hole injection layer is disposed close to the substrate 20.
[0078] The hole injection layer can be a material that facilitates control of the hole injection rate, such as CuPc; the hole transport layer can be a material with high thermal stability that is conducive to hole transport, such as NPB (N,N′-(1-naphthyl)-N,N′-diphenyl-4,4′-biphenyldiamine); the luminescent material layer can be a material with high luminous efficiency, such as Alq3; and the electron transport layer can be a material with high thermal stability that is conducive to electron transport, such as PBD (2-(4-biphenyl)-5-(4-tert-butyl)phenyl-1,3,4-oxadiazole).
[0079] Driven by external forces, electrons pass through the electron transport layer from the cathode layer to the luminescent material layer, and holes pass through the hole injection layer and hole transport layer from the anode layer 40 to the luminescent material layer. Electrons and holes interact in the luminescent material layer to emit light. The light passes through the electron transport layer and enters the cathode layer, and is emitted from the luminescent area of the cathode layer.
[0080] In addition, a pixel definition layer may be included between the light-emitting layer and the anode layer 40. The pixel definition layer can define multiple light-emitting areas and non-light-emitting areas on the substrate 20. The position of the anode corresponds to the position of the light-emitting area, and the position of the auxiliary electrode corresponds to the position of the non-light-emitting area, thereby avoiding the auxiliary electrode from affecting the light-emitting effect of the product.
[0081] Based on the same inventive concept, embodiments of this application also disclose a display device, including a display panel, which is prepared by the display panel preparation method described above in this application.
[0082] Specifically, the display device can be a computer monitor, television, billboard, laser printer with display function, telephone, mobile phone, personal digital assistant (PDA), laptop computer, digital camera, portable camcorder, viewfinder, vehicle, large wall area, theater screen or stadium sign, etc.
[0083] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0084] It should also be noted that, in this document, the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance. Moreover, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements, but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. In the absence of further restrictions, an element defined by the phrase "includes a..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes the element.
[0085] The technical solutions provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand this application, and the content of this specification should not be construed as a limitation of this application. Furthermore, for those skilled in the art, there will be different forms of changes in the specific implementation methods and application scope based on this application. It is neither necessary nor possible to exhaustively list all implementation methods here, and obvious changes or modifications derived therefrom are still within the protection scope of this application.
Claims
1. A method for manufacturing a display panel, characterized in that, The preparation method includes: Provide substrates; Multiple protrusion structures are formed on one side of the substrate, and the protrusion structures are trapezoidal in shape. A metal layer is formed on one side of the substrate. The metal layer includes a partition region and a non-partition region. The metal layer includes at least one partition structure formed in the partition region. The partition structure includes a flat region and a plurality of raised regions surrounding the flat region. The distance from the side of the raised region away from the substrate to the substrate is greater than the distance from the side of the flat region away from the substrate to the substrate. The position of the raised structure corresponds to the position of the raised region of the partition structure. The raised structure of the planar layer is etched by an etching process. During the etching process, it is necessary to first etch away part of the metal layer at the location of the raised area. An anode layer is formed on the side of the non-isolated region of the metal layer away from the substrate, and an auxiliary electrode layer is formed on the side of the isolation structure away from the substrate. The orthographic projection of the anode layer on the substrate and the orthographic projection of the auxiliary electrode layer on the substrate do not overlap. The anode layer and the auxiliary electrode layer are formed in the same steps using the same material and the same process. The partition structure includes a first sidewall and a second sidewall in the raised area, wherein one side of the first sidewall is connected to the flat area and the other side is connected to the second sidewall, and the distance from the side of the second sidewall away from the substrate to the substrate is greater than the distance from the side of the flat area away from the substrate to the substrate.
2. The method for manufacturing a display panel according to claim 1, characterized in that, Prior to the step of forming a metal layer on one side of the substrate, the fabrication method further includes: A planarization layer is formed on one side of the substrate, the planarization layer including a plurality of protrusion structures, and the positions of the protrusion structures correspond to the positions of the protrusion regions of the partition structure.
3. The method for manufacturing a display panel according to claim 1, characterized in that: The metal layer includes multiple partition structures, and each partition structure has an auxiliary electrode layer formed on the side opposite to the substrate.
4. The method for manufacturing a display panel according to claim 1, characterized in that: The thickness of the anode layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
5. The method for manufacturing a display panel according to claim 1, characterized in that: The thickness of the auxiliary electrode layer is greater than or equal to 200 nm and less than or equal to 1000 nm.
6. The method for manufacturing a display panel according to claim 1, characterized in that: The thickness of the metal layer is greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms.
7. The method for manufacturing a display panel according to claim 1, characterized in that: The materials of the metal layer include Al, Mo, and ITO.
8. The method for manufacturing a display panel according to claim 1, characterized in that: The thickness of the planarization layer is greater than or equal to 2000 nm and less than or equal to 3500 nm.
9. The method for manufacturing a display panel according to any one of claims 1-8, characterized in that, After forming an anode layer on the side of the non-isolated region of the metal layer facing away from the substrate, and forming an auxiliary electrode layer on the side of the isolation structure facing away from the substrate, the fabrication method further includes: A light-emitting layer and a cathode layer are sequentially formed on the side of the anode layer and the auxiliary electrode layer opposite to the substrate. The cathode layer and the auxiliary electrode layer are metal-connected.
10. The method for manufacturing a display panel according to any one of claims 1-8, characterized in that: The substrate includes a thin-film transistor substrate.
11. The method for manufacturing a display panel according to claim 2, characterized in that, Prior to the step of forming a planarization layer on one side of the substrate, the fabrication method further includes: A passivation layer is formed on one side of the substrate.
12. A display device, characterized in that, Includes a display panel, which is prepared by the method for preparing a display panel according to any one of claims 1-11.