Perovskite solar cell and preparation method thereof

Abstract

The application belongs to the technical field of photovoltaic materials and devices, and particularly relates to a perovskite solar cell and a preparation method thereof. x Br 3‑x , wherein x is 1-3, the hole transport layer comprises a nickel oxide layer, and the electron transport layer comprises, from bottom to top, a niobium pentoxide layer, a C 60 layer, and a BCP layer. The application is conducive to obtaining a high-quality perovskite polycrystalline thin film, matching the energy levels of the hole transport layer and the electron transport layer with the perovskite light absorption layer, and facilitating the extraction and transport of photo-generated carriers.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic materials and devices technology, and particularly relates to a perovskite solar cell and its preparation method. Background Technology

[0002] As early as 2006, Professor Miyasaka's research group at Toin University in Yokohama, Japan, attempted to use perovskite materials as light-absorbing materials in dye-sensitized solar cells. They first reported a dye-sensitized perovskite solar cell with a solar energy conversion efficiency of 3.8% in 2009 (J. Am. Chem. Soc., 2009, 131, 6050). Subsequently, Professor Nam-Gyu Park's research group at Sungkyunkwan University in South Korea nearly doubled the energy conversion efficiency by optimizing the precursor solution concentration and annealing temperature (Nanoscale, 2011, 3, 4088). However, perovskite solar cells truly gained attention when they were used in all-solid-state structures similar to organic thin-film solar cells (Sci. Rep., 2012, 2, 591). Due to the significant advantages of perovskite solar cells, such as low raw material and manufacturing costs, and with substantial investment in related research, the performance of perovskite solar cells has rapidly improved in recent years.

[0003] These perovskite materials generally have the basic chemical formula ABX3, where A + It is generally a monovalent cation (the most common being methylamine ion (MA)). + ), cesium ion (Cs + ), formamidinium ion (FA + B 2+ It is an inorganic cation (usually Pb). 2+ ), X - It is a halide anion (usually I) - ,Br - or Cl -Depending on the type of halogen element used, the band gap of perovskite materials can be continuously tuned within the range of 1.6 to 3.2 eV. Since perovskite solar cells initially evolved from dye-sensitized solar cells, mesoporous structures are quite common. In this structure, a mesoporous layer composed of TiO2 particles lies on top of a dense TiO2 selective electron transport layer. This mesoporous layer serves as a framework for the deposited perovskite film and reduces the electron diffusion distance, thereby improving electron collection efficiency. Initial studies used mesoporous layers with a thickness of approximately 500-600 nm, with the perovskite light-absorbing material completely integrated into the mesoporous framework. However, with further research, it has been found that using a thinner mesoporous layer of approximately 150-200 nm, while forming a continuous, dense perovskite light-absorbing layer on top, can yield better device performance. Since electrons and holes have long diffusion lengths in perovskite materials, high-efficiency perovskite solar cells can be obtained by using planar structures after completely removing the mesoporous layer. Moreover, planar perovskite solar cells, with their simpler structure, have a significant advantage in fabrication structure compared to mesoporous perovskite solar cells. Therefore, planar perovskite solar cells have greater potential for commercialization.

[0004] Currently, common perovskite solar cell device structures include mesoporous, planar (nip), and planar inversion (pin) types. The n-type electron transport materials used in current planar structures are generally metal oxide semiconductors, with commonly used titanium dioxide requiring high-temperature annealing. P-type hole transport materials are generally organic hole transport materials, such as the commonly used polymer PTAA and the small molecule compound Spiro-OMeTAD. These hole transport materials often require doping due to their low mobility to achieve high photovoltaic device performance. However, the dopants used have drawbacks such as water absorption or poor stability, which limits the commercial application of perovskite photovoltaic devices. Therefore, developing novel hole and electron transport layers for perovskite photovoltaic devices must satisfy the requirement of matching the energy level structure with the perovskite photoactive layer, while also possessing the advantages of low-cost materials and large-area uniform deposition. Thus, developing high-quality perovskite polycrystalline thin films and low-cost, large-area uniformly fabricated hole and electron transport layers to construct planar perovskite solar cell devices is urgently needed. Summary of the Invention

[0005] The embodiments of this application provide a perovskite solar cell and a method for preparing the same, thereby providing optical performance of the perovskite solar cell and facilitating industrialization.

[0006] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0007] On one hand, embodiments of this application provide a perovskite solar cell, comprising, from bottom to top, a substrate, an anode layer, a hole transport layer, a halide ammonium salt layer, a perovskite light-absorbing layer, an electron transport layer, and a cathode layer, wherein the perovskite light-absorbing layer comprises CsPbI x Br 3-x Where x is 1-3, the hole transport layer includes a nickel oxide layer, and the electron transport layer includes a niobium pentoxide layer and a C layer stacked sequentially from bottom to top. 60 Layer with BCP (2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline) layer.

[0008] The beneficial effects of this invention are: this invention is conducive to obtaining high-quality perovskite polycrystalline thin films, and makes the energy levels of the hole transport layer and the electron transport layer match the perovskite light absorption layer, which is beneficial to the extraction and transport of photogenerated carriers.

[0009] Optionally, the hole transport layer further includes an electron blocking layer and / or an exciton blocking layer, and / or

[0010] The electron transport layer further includes a hole blocking layer and / or an exciton blocking layer, and / or

[0011] An anolyte buffer layer is further included between the anode layer and the hole transport layer, and / or

[0012] A cathode buffer layer is also included between the cathode layer and the electron transport layer.

[0013] Optionally, the halide ammonium salt layer includes a halide ammonium salt, which comprises any of the following structural formulas:

[0014]

[0015] On the other hand, this application also provides a method for fabricating a perovskite solar cell, comprising the following steps:

[0016] S1. Obtain the substrate and ultrasonically clean it sequentially with cleaning agent, deionized water and isopropanol, and then dry it.

[0017] S2. An anode layer is formed on the substrate;

[0018] S3. Nickel oxide is deposited on the anode layer by electron beam evaporation to form a hole transport layer;

[0019] S4. Deposit ammonium halide salts on the hole transport layer to form an ammonium halide salt layer;

[0020] S5, Deposit CsPbI on the halide ammonium salt layer x Br 3-x , where x is 1-3, forming a perovskite light-absorbing layer;

[0021] S6. Niobium pentoxide is deposited on the perovskite light-absorbing layer by electron beam evaporation to form a niobium pentoxide layer.

[0022] S7. C is deposited on the niobium pentoxide layer using a thermal evaporation method. 60 To form C 60 layer;

[0023] S8, in the C 60 BCP is deposited on the layer using a thermal evaporation method to form a hole-blocking layer;

[0024] S9. A cathode layer is formed on the hole blocking layer.

[0025] Optionally, both the anode layer and the cathode layer comprise at least one of aluminum, silver-magnesium alloy, silver, gold, indium tin oxide, fluorine-doped tin dioxide, zinc oxide, indium gallium zinc oxide, and poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid).

[0026] Optionally, in S3, an anode buffer layer is formed between the anode layer and the hole transport layer.

[0027] Optionally, in S3, an electron blocking layer and / or an exciton blocking layer are formed on the nickel oxide layer, wherein the nickel oxide layer and the electron blocking layer and / or exciton blocking layer together serve as the hole transport layer.

[0028] Optionally, in S6, a hole blocking layer and / or an exciton blocking layer are formed on the perovskite light-absorbing layer, and the niobium pentoxide layer together with the hole blocking layer and / or the exciton blocking layer serve as the electron transport layer.

[0029] Optionally, in S9, a cathode buffer layer is formed between the electron transport layer and the cathode layer.

[0030] Optionally, in S2, the thickness of the anode layer is 40-200 nm; in S3, the thickness of the hole transport layer is 20-100 nm; in S4, the thickness of the halide ammonium salt layer is 0-20 nm; in S5, the thickness of the perovskite light-absorbing layer is 200-1000 nm; in S6, the thickness of the niobium pentoxide layer is 10-100 nm; in S7, the C... 60 The thickness of the film layer is 10-100 nm; in S8, the thickness of the hole blocking layer is 5-100 nm; in S9, the thickness of the cathode layer is 100-300 nm. Attached Figure Description

[0031] Figure 1This is a schematic diagram of the structure of a perovskite solar cell device according to an embodiment of the present invention;

[0032] Figure 2 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 1;

[0033] Figure 3 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 2;

[0034] Figure 4 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 3;

[0035] Figure 5 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 4;

[0036] Figure 6 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 5;

[0037] Figure 7 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 6;

[0038] Figure 8 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 7;

[0039] Figure 9 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 8;

[0040] Figure 10 This is a current density-voltage characteristic curve of the perovskite solar cell device in Example 9.

[0041] The attached diagram lists the components represented by each number as follows:

[0042] 1. Substrate; 2. Anode layer; 3. NiO x 4. Hole transport layer; 5. Halide ammonium salt layer; 6. Perovskite light absorption layer; 7. Niobium pentoxide layer; 8. C 60 8. Hole blocking layer; 9. Cathode layer. Detailed Implementation

[0043] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0044] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0045] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0046] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The singular forms "a" and "the" as used in this specification and the appended claims also include a plurality of indicators, unless explicitly stated otherwise. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality" means two or more.

[0047] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0048] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0049] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and regions is enlarged for clarity. The exemplary embodiments disclosed herein should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations caused, for example, by manufacturing processes. For example, etched regions shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0050] like Figure 1 As shown, this application provides a perovskite solar cell device, comprising, from bottom to top, a substrate, an anode layer, a hole transport layer, a halide ammonium salt layer, a perovskite light-absorbing layer, an electron transport layer, and a cathode layer stacked sequentially. The perovskite light-absorbing layer comprises CsPbI₂. x Br 3-x Where x is 1-3, the hole transport layer includes nickel oxide (NiO). x The electron transport layer includes an electron blocking layer and / or an exciton blocking layer, and the electron transport layer includes a niobium pentoxide (Nb₂O₅) layer and a C layer. 60 The anode layer includes a hole-blocking layer and / or an exciton-blocking layer. Of course, in other embodiments, the hole transport layer may consist only of a nickel oxide layer, and the electron transport layer may consist only of a niobium pentoxide layer; selective design is possible depending on the specific circumstances, and no further limitations are imposed here. Furthermore, an anode buffer layer may be provided between the anode layer and the hole transport layer; a cathode buffer layer may also be provided between the cathode layer and the electron transport layer.

[0051] In this invention, the nickel oxide layer is obtained by electron beam evaporation; a halide ammonium salt layer is deposited on the nickel oxide layer as an interface modifier for the perovskite crystal film to obtain a high-quality perovskite polycrystalline film; the niobium pentoxide layer is obtained by electron beam evaporation; C 60 The layer was obtained by thermal evaporation deposition. This configuration aims to ensure that the perovskite photoactive layer forms matching energy levels with the hole and electron transport layers. The quality of the perovskite crystal can be controlled by adjusting the concentration of the ammonium halide salt. Using ammonium halide salts as a bottom interface modulator in perovskite photovoltaic devices is beneficial for obtaining high-quality perovskite films, combined with the use of a nickel oxide layer (NiO). x The valence band energy level of the perovskite light absorption layer is matched with that of the hole transport layer, and the conduction band energy level of the niobium pentoxide layer (Nb2O5) is matched with that of the electron transport layer. This facilitates the transfer of holes and electrons from the perovskite light absorption layer to the hole transport layer and electron transport layer, respectively, which in turn helps the perovskite solar cell device to obtain better short-circuit current, open-circuit voltage, fill factor and power conversion efficiency.

[0052] The fabrication method of the above-mentioned perovskite solar cells will be described in detail below. It includes the following steps:

[0053] S1. Obtain the substrate and ultrasonically clean it sequentially with cleaning agent, deionized water and isopropanol, and then dry it.

[0054] S2. An anode layer is formed on the substrate;

[0055] S3. Nickel oxide is deposited on the anode layer by electron beam evaporation to form a hole transport layer;

[0056] S4. Deposit ammonium halide salts on the hole transport layer to form an ammonium halide salt layer;

[0057] S5, Deposit CsPbI on the halide ammonium salt layer x Br 3-x , where x is 1-3, forming a perovskite light-absorbing layer;

[0058] S6. Niobium pentoxide is deposited on the perovskite light-absorbing layer by electron beam evaporation to form a niobium pentoxide layer.

[0059] S7. C is deposited on the niobium pentoxide layer using a thermal evaporation method. 60 To form C 60 layer;

[0060] S8, in the C 60 BCP (2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline) was deposited on the layer using a thermal evaporation method to form a hole-blocking layer;

[0061] S9. A cathode layer is formed on the hole blocking layer.

[0062] In S1, the substrate can be a rigid substrate, such as glass, quartz, sapphire, etc., or a flexible substrate, such as polyimide, polyethylene terephthalate, polyethylene terephthalate, polyethylene naphthalate or other polyester materials, or a metal, alloy or stainless steel film, etc.

[0063] In S2, the anode layer can be a metal, a metal oxide, or poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) and its modified products. The metal can be aluminum, silver-magnesium alloy, silver, or gold, and the metal oxide can be one or a combination of two or more of indium tin oxide, fluorine-doped tin dioxide, zinc oxide, and indium gallium zinc oxide.

[0064] In S3, only nickel oxide (NiO) can be formed on the aforementioned anode layer. xThe nickel oxide layer can be used as a hole transport layer; an electron blocking layer and / or an exciton blocking layer can also be formed on the nickel oxide layer. The electron blocking layer and / or exciton blocking layer can block electrons or excitons from flowing into the hole transport layer, thereby reducing the probability of recombination between holes and electrons. In this case, the nickel oxide layer and the electron blocking layer and / or exciton blocking layer together serve as the hole transport layer.

[0065] In S6, a niobium pentoxide layer can be deposited on the substrate with the perovskite light-absorbing layer to serve as an electron transport layer. Alternatively, in other embodiments, a hole-blocking layer and / or an exciton-blocking layer can be formed below the niobium pentoxide layer. The hole-blocking layer and / or exciton-blocking layer can prevent holes or excitons from flowing into the electron transport layer, thereby reducing the recombination probability of holes and electrons. In this case, the niobium pentoxide layer and the hole-blocking layer and / or exciton-blocking layer together serve as the electron transport layer.

[0066] In S9, the cathode layer can be a metal, a metal oxide, or a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) compound or its modified products. The metal can be aluminum, a silver-magnesium alloy, silver, or gold, and the metal oxide can be one or a combination of two or more of indium tin oxide, fluorine-doped tin dioxide, zinc oxide, and indium gallium zinc oxide.

[0067] In other embodiments, S2 may further include forming an anode buffer layer between the anode layer and the hole transport layer to facilitate the smooth flow of holes into the anode. S9 may further include forming a cathode buffer layer between the electron transport layer and the cathode layer to facilitate the smooth flow of electrons into the cathode.

[0068] The specific fabrication steps of the perovskite solar cell device of the present invention will be described in detail below through nine embodiments.

[0069] Example 1

[0070] An ITO conductive glass substrate with an ITO thickness of 90 nm and a sheet resistance of 15 ohms / square was used. The substrate was then ultrasonically cleaned sequentially with a micron-level semiconductor-specific detergent, deionized water, and isopropanol for 20 minutes to remove surface contaminants. It was subsequently dried in an oven at 80°C. Nickel oxide (NiO) was then deposited on the ITO substrate using electron beam evaporation. x It serves as a hole transport layer.

[0071] The specific steps are as follows: Nickel oxide (NiO) xParticles were used as the target material and deposited on the substrate under electron beam bombardment. The substrate was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell device was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of the halide ammonium salt (PA) in isopropanol being 1 mg / mL. The performance of the perovskite solar cell device was optimized by adjusting the concentration of the halide ammonium salt (PA) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI₂Br was then prepared using a solution method. The device was then loaded into an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0072] / ITO / NiO x (30nm) / PA / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0073] The photoelectric performance of the perovskite solar cell device obtained in Example 1 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The current and voltage information of the device was measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency can be obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device can then be achieved by analyzing these photovoltaic performance parameters.

[0074] like Figure 2 The image shows the perovskite solar cell device obtained in this embodiment: glass substrate.

[0075] / ITO / NiO x (30nm) / PA / CsPbI2Br / Nb2O5(50nm) / C 60The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.63 mA / cm². 2 The open-circuit voltage is 1.07V, the fill factor is 77.69%, and the power conversion efficiency is 13.04%.

[0076] Example 2

[0077] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0078] The specific steps are as follows: Nickel oxide (NiO) x Particles were used as the target material and deposited on the substrate under electron beam bombardment. The device was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of halide ammonium salt (4-CF3-PA) in isopropanol at 1 mg / ml. The performance of the perovskite solar cell was further optimized by adjusting the concentration of halide ammonium salt (4-CF3-PA) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI2Br was then prepared using a solution method. The device was then installed in an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0079] / ITO / NiO x (30nm) / 4-CF3-PA / CsPbI2Br / Nb2O5(50nm) / C60 (40nm) / BCP(8nm) / Al(100nm).

[0080] The photoelectric performance of the perovskite solar cell device obtained in Example 2 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The current and voltage information of the device were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency can be obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device can then be achieved by analyzing these photovoltaic performance parameters.

[0081] like Figure 3 The image shows the perovskite solar cell device obtained in this second embodiment: glass substrate.

[0082] / ITO / NiO x (30nm) / 4-CF3-PA / CsPbI2Br / Nb2O5(50nm) / C 60 The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.78 mA / cm². 2 The open-circuit voltage is 1.08V, the fill factor is 76.65%, and the power conversion efficiency is 13.18%.

[0083] Example 3

[0084] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0085] The specific steps are as follows: Nickel oxide (NiO) xParticles were used as the target material and deposited on the substrate under electron beam bombardment. The device was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of 1,4-PADADI in isopropanol being 1 mg / ml. The performance of the perovskite solar cell was further optimized by adjusting the concentration of 1,4-PADADI in isopropanol. A perovskite light-absorbing layer with the composition CsPbI₂Br was then prepared using a solution method. The device was then loaded into an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0086] / ITO / NiO x (30nm) / 1,4-PADADI / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0087] The photoelectric performance of the perovskite solar cell device obtained in Example 3 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information was measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these performance parameters.

[0088] like Figure 4 The image shows the perovskite solar cell device obtained in this embodiment three: glass substrate.

[0089] / ITO / NiO x (30nm) / 1,4-PADADI / CsPbI2Br / Nb2O5(50nm) / C 60The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.58 mA / cm². 2 The open-circuit voltage is 1.10V, the fill factor is 78.73%, and the power conversion efficiency is 13.63%.

[0090] Example 4

[0091] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0092] The specific steps are as follows: Nickel oxide (NiO) x Particles were used as the target material and deposited on the substrate under electron beam bombardment. The substrate was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell device was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of the halide ammonium salt (PEAI) in isopropanol being 1 mg / ml. The performance of the perovskite solar cell device was optimized by adjusting the concentration of the halide ammonium salt (PEAI) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI₂Br was then prepared using a solution method. The device was then loaded into an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0093] / ITO / NiO x (30nm) / PEAI / CsPbI2Br / Nb2O5(50nm) / C 60(40nm) / BCP(8nm) / Al(100nm).

[0094] The photoelectric performance of the perovskite solar cell device obtained in Example 4 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these performance parameters.

[0095] like Figure 5 The image shows the perovskite solar cell device obtained in this embodiment four: glass substrate.

[0096] / ITO / NiO x (30nm) / PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.59 mA / cm². 2 The open-circuit voltage is 1.08V, the fill factor is 77.32%, and the power conversion efficiency is 12.89%.

[0097] Example 5

[0098] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0099] The specific steps are as follows: Nickel oxide (NiO) xParticles were used as the target material and deposited on the substrate under electron beam bombardment. The substrate was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell device was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of halide ammonium salt (pF-PEAI) in isopropanol being 1 mg / ml. The performance of the perovskite solar cell device was optimized by adjusting the concentration of halide ammonium salt (pF-PEAI) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI₂Br was then prepared using a solution method. The device was then loaded into an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0100] / ITO / NiO x (30nm) / pF-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0101] The photoelectric performance of the perovskite solar cell device obtained in Example 5 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these performance parameters.

[0102] like Figure 6 The image shows the perovskite solar cell device obtained in Example 5: glass substrate.

[0103] / ITO / NiO x (30nm) / pF-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.24 mA / cm². 2 The open-circuit voltage is 1.06V, the fill factor is 76.07%, and the power conversion efficiency is 12.33%.

[0104] Example 6

[0105] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0106] The specific steps are as follows: Nickel oxide (NiO) x Particles were used as the target material and deposited on the substrate under electron beam bombardment. The substrate was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell device was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of the halide ammonium salt (4-CF3-PEAI) in isopropanol at 1 mg / ml. The performance of the perovskite solar cell device was optimized by adjusting the concentration of the halide ammonium salt (4-CF3-PEAI) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI2Br was then prepared using a solution method. The device was then installed in an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0107] / ITO / NiO x(30nm) / 4-CF3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0108] The photoelectric performance of the perovskite solar cell device obtained in Example 6 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The current and voltage information of the device were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency can be obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device can be achieved by analyzing these photovoltaic performance parameters.

[0109] like Figure 7 The image shows the perovskite solar cell device obtained in Example 6: glass substrate.

[0110] / ITO / NiO x (30nm) / 4-CF3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 16.09 mA / cm². 2 The open-circuit voltage is 1.13V, the fill factor is 77.64%, and the power conversion efficiency is 14.19%.

[0111] Example 7

[0112] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0113] The specific steps are as follows: Nickel oxide (NiO) xParticles were used as the target material and deposited on the substrate under electron beam bombardment. The device was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of the halide ammonium salt (4-CH3-PEAI) in isopropanol at 1 mg / ml. The performance of the perovskite solar cell was further optimized by adjusting the concentration of the halide ammonium salt (4-CH3-PEAI) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI2Br was then prepared using a solution method. The device was then installed in an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0114] / ITO / NiO x (30nm) / 4-CH3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0115] The photoelectric performance of the perovskite solar cell device obtained in Example 7 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these performance parameters.

[0116] like Figure 8 The image shows the perovskite solar cell device obtained in Example 7: glass substrate.

[0117] / ITO / NiO x (30nm) / 4-CH3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 16.76 mA / cm². 2 The open-circuit voltage is 1.10V, the fill factor is 78.32%, and the power conversion efficiency is 14.47%.

[0118] Example 8

[0119] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0120] The specific steps are as follows: Nickel oxide (NiO) x Particles were used as the target material and deposited on the substrate under electron beam bombardment. The device was then heated at 300°C for 60 minutes in air. The performance of the perovskite solar cell was optimized by adjusting the thickness of the hole transport layer to 20-100 nm. A halide ammonium salt layer was prepared using a solution method, with the concentration of the halide ammonium salt (4-OCH3-PEAI) in isopropanol at 1 mg / ml. The performance of the perovskite solar cell was further optimized by adjusting the concentration of the halide ammonium salt (4-OCH3-PEAI) in isopropanol. A perovskite light-absorbing layer with the composition CsPbI2Br was then prepared using a solution method. The device was then loaded into an electron beam evaporation apparatus, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4 After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0121] / ITO / NiO x(30nm) / 4-OCH3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0122] The photoelectric performance of the perovskite solar cell device obtained in Example 8 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information was measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these photovoltaic performance parameters.

[0123] like Figure 9 The image shows the perovskite solar cell device obtained in Example 8: glass substrate.

[0124] / ITO / NiO x (30nm) / 4-OCH3-PEAI / CsPbI2Br / Nb2O5(50nm) / C 60 The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 17.20 mA / cm². 2 The open-circuit voltage is 1.08V, the fill factor is 76.82%, and the power conversion efficiency is 14.28%.

[0125] Example 9

[0126] Several ITO conductive glass substrates were taken, with an ITO thickness of approximately 90 nm and a sheet resistance of approximately 15 ohms / square. The substrates were sequentially ultrasonically cleaned for 20 minutes each with a micron-level semiconductor-specific detergent, deionized water, and isopropanol to remove surface contaminants. They were then dried in an oven at 80°C. Subsequently, nickel oxide (NiO) was deposited on the ITO substrates using electron beam evaporation. x It serves as a hole transport layer.

[0127] The specific steps are as follows: Nickel oxide (NiO) x Particles were used as the target material and deposited on the substrate under electron beam bombardment; then, the substrate was heated at 300°C for 60 minutes in air, and the performance of the perovskite solar cell device was optimized by adjusting the thickness of the hole transport layer to 20-100 nm; then, a perovskite light-absorbing layer with the composition CsPbI2Br was prepared by solution method; subsequently, the substrate was placed in an electron beam evaporation equipment, and the cooling pump was turned on. When the vacuum degree in the evaporation chamber was less than 10... -4After Pa, electron beam evaporation of the thin film begins. Using a specific mask, niobium pentoxide (Nb₂O₅) electron transport layer is deposited. By adjusting the thickness of the Nb₂O₅ electron transport layer to 20-100 nm, the performance of the perovskite solar cell device is optimized. Since the hole transport layer and electron transport layer can be deposited using electron beam evaporation to achieve large-area uniform fabrication, large-area solar cell devices can be fabricated by using different masks. Finally, the aforementioned substrate is placed in a thermal evaporation device to sequentially deposit C. 60 A glass substrate (BCP) is used as the electron transport layer of the device, and deposited aluminum is used as the cathode. The deposition rate and thickness of each functional layer are monitored in real time using a quartz crystal film thickness gauge. The resulting perovskite solar cell device has the following structure: glass substrate...

[0128] / ITO / NiO x (30nm) / CsPbI2Br / Nb2O5(50nm) / C 60 (40nm) / BCP(8nm) / Al(100nm).

[0129] The photoelectric performance of the perovskite solar cell device obtained in Example 9 was tested: After the device was fabricated, it was removed from the evaporation chamber and then tested. The device's current and voltage information were measured using a Keithley 2400 power meter. Photovoltaic performance parameters such as current density, fill factor, and power conversion efficiency were obtained from the current, voltage, and light intensity data. Further optimization of the photovoltaic device was then achieved by analyzing these performance parameters.

[0130] like Figure 10 The image shows the perovskite solar cell device obtained in Example 9: glass substrate.

[0131] / ITO / NiO x (30nm) / Nb2O5(50nm) / C 60 The current density-voltage characteristic curves of (40nm) / BCP(8nm) / Al(100nm) are shown. These curves reveal parameters characterizing photovoltaic device performance, such as short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency. The short-circuit current is 15.00 mA / cm². 2 The open-circuit voltage is 0.99V, the fill factor is 70.73%, and the power conversion efficiency is 10.52%.

[0132] The table below summarizes the photovoltaic performance parameters of the perovskite solar cell devices in the nine embodiments:

[0133]

[0134] As shown in the table above, Examples 1-8 deposited ammonium halide salt layers on the hole transport layer as bottom interface modifiers for the perovskite photoactive layer, while Example 9 did not deposit an ammonium halide salt layer on the hole transport layer as a reference solar cell device. The perovskite solar cell devices prepared in Examples 1-8 achieved higher energy conversion efficiencies than those prepared in Example 9, mainly due to significant improvements in open-circuit voltage, short-circuit current, and fill factor, resulting in high energy conversion efficiency. Example 1, using ammonium halide salt (PA) as a crystal modifier for the perovskite bottom interface, achieved an open-circuit voltage of 1.07V, a fill factor of 77.69%, and a short-circuit current of 15.63mA / cm. 2 The solar energy conversion efficiency was 13.04%. In Example 2, ammonium halide salt (4-CF3-PA) was used as a crystal regulator for the perovskite substrate interface, achieving an open-circuit voltage of 1.08V, a fill factor of 76.65%, and a short-circuit current of 15.78mA / cm. 2 The solar energy conversion efficiency was 13.18%. In Example 3, ammonium halide salt (1,4-PADADI) was used as a crystal modifier for the perovskite substrate interface, achieving an open-circuit voltage of 1.10V, a fill factor of 78.73%, and a short-circuit current of 15.58mA / cm. 2 The solar energy conversion efficiency was 13.63%; in Example 4, ammonium halide salt (PEAI) was used as a crystal regulator for the perovskite substrate interface, achieving an open-circuit voltage of 1.08V, a fill factor of 77.32%, and a short-circuit current of 15.59mA / cm. 2 The solar energy conversion efficiency was 12.89%; in Example 5, ammonium halide salt (pF-PEAI) was used as a crystal modifier for the perovskite substrate interface, achieving an open-circuit voltage of 1.06V, a fill factor of 76.07%, and a short-circuit current of 15.24mA / cm. 2 The solar energy conversion efficiency was 12.33%. In Example 6, ammonium halide salt (4-CF3-PEAI) was used as a crystal modifier for the perovskite substrate interface, achieving an open-circuit voltage of 1.13V, a fill factor of 77.64%, and a short-circuit current of 16.09mA / cm. 2 The solar energy conversion efficiency was 14.19%; in Example 7, an ammonium halide salt (4-CH3-PEAI) was used as a crystal regulator for the perovskite substrate interface, achieving an open-circuit voltage of 1.10V, a fill factor of 78.32%, and a short-circuit current of 16.76mA / cm. 2 The solar energy conversion efficiency was 14.47%; in Example 8, an ammonium halide salt (4-OCH3-PEAI) was used as a crystal regulator for the perovskite substrate interface, achieving an open-circuit voltage of 1.08V, a fill factor of 76.82%, and a short-circuit current of 17.20mA / cm. 2The solar energy conversion efficiency is 14.28%; Example 9, as a reference solar cell device, has an open-circuit voltage of 0.99V, a fill factor of 70.73%, and a short-circuit current of 15.00mA / cm. 2 The solar energy conversion efficiency is 10.52%, indicating that using ammonium halide salts as regulators for perovskite polycrystalline thin films at the perovskite substrate interface can effectively regulate the crystal quality and ultimately obtain high-efficiency perovskite solar cell devices.

[0135] In summary, the functional layer materials involved in this invention are low-cost, which helps reduce the cost of device fabrication; they can be fabricated over large areas, facilitating the fabrication of large-area photovoltaic devices. The perovskite layer of the device involved in this invention has excellent crystal quality, and the transport layer can be fabricated over a large area at relatively low temperatures, providing a feasible implementation scheme for achieving low-temperature fabrication of large-area perovskite solar cell devices. The perovskite solar cell devices involved in this invention can achieve high photovoltaic performance, providing a feasible implementation scheme for achieving high-performance photovoltaic devices.

[0136] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0137] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A perovskite solar cell, characterized in that, The perovskite light-absorbing layer comprises, from bottom to top, a substrate, an anode layer, a hole transport layer, a halide ammonium salt layer, a perovskite light-absorbing layer, an electron transport layer, and a cathode layer, wherein the perovskite light-absorbing layer includes CsPbI. x Br 3-x Where x is 1-3, the hole transport layer includes a nickel oxide layer, and the electron transport layer includes a niobium pentoxide layer and a C layer stacked sequentially from bottom to top. 60 Layer and BCP layer; The hole transport layer further includes an electron blocking layer and / or an exciton blocking layer, and / or The electron transport layer further includes a hole blocking layer and / or an exciton blocking layer, and / or An anolyte buffer layer is further included between the anode layer and the hole transport layer, and / or A cathode buffer layer is also included between the cathode layer and the electron transport layer; The halide ammonium salt layer includes a halide ammonium salt, which comprises any of the following structural formulas: 。 2. A method for preparing a perovskite solar cell, characterized in that, Includes the following steps: S1. Obtain the substrate and ultrasonically clean it sequentially with cleaning agent, deionized water and isopropanol, and then dry it. S2. An anode layer is formed on the substrate; S3. Nickel oxide is deposited on the anode layer by electron beam evaporation to form a hole transport layer; S4. Deposit ammonium halide salts on the hole transport layer to form an ammonium halide salt layer, wherein the ammonium halide salt layer is any of the structural formulas described in claim 1; S5, Deposit CsPbI on the halide ammonium salt layer x Br 3-x , where x is 1-3, forming a perovskite light-absorbing layer; S6. Niobium pentoxide is deposited on the perovskite light-absorbing layer by electron beam evaporation to form a niobium pentoxide layer. S7. C is deposited on the niobium pentoxide layer using a thermal evaporation method. 60 To form C 60 layer; S8, in the C 60 BCP is deposited on the layer using a thermal evaporation method to form a hole-blocking layer; S9. A cathode layer is formed on the hole blocking layer.

3. The preparation method according to claim 2, characterized in that, Both the anode layer and the cathode layer comprise at least one of aluminum, silver-magnesium alloy, silver, gold, indium tin oxide, fluorine-doped tin dioxide, zinc oxide, indium gallium zinc oxide, and poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid).

4. The preparation method according to claim 2, characterized in that, In S3, an anode buffer layer is formed between the anode layer and the hole transport layer.

5. The preparation method according to claim 2, characterized in that, In S3, an electron blocking layer and / or an exciton blocking layer are formed on the nickel oxide layer, wherein the nickel oxide layer and the electron blocking layer and / or exciton blocking layer together serve as the hole transport layer.

6. The preparation method according to claim 2, characterized in that, In S6, a hole blocking layer and / or an exciton blocking layer are formed on the perovskite light-absorbing layer, and the niobium pentoxide layer together with the hole blocking layer and / or the exciton blocking layer serve as an electron transport layer.

7. The preparation method according to claim 6, characterized in that, In S9, a cathode buffer layer is formed between the electron transport layer and the cathode layer.

8. The preparation method according to claim 2, characterized in that, In S2, the thickness of the anode layer is 40-200 nm; In S3, the thickness of the hole transport layer is 20-100 nm; In S4, the thickness of the halide ammonium salt layer is 0-20 nm; In S5, the thickness of the perovskite light-absorbing layer is 200-1000 nm; In S6, the thickness of the niobium pentoxide layer is 10-100 nm; In S7, the C 60 The thickness of the film layer is 10-100 nm; In S8, the thickness of the hole blocking layer is 5-100 nm; In S9, the thickness of the cathode layer is 100-300 nm.

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