Indium-aluminum-zinc-oxide-based neuromorphic memristor, method of fabrication, and apparatus

Abstract

The application belongs to the technical field of memristor, and aims at the problems of single resistance transition performance of traditional memristor material and lack of device stability regulation, and provides a neuromorphic memristor based on indium aluminum zinc oxide, a preparation method and equipment. The neuromorphic memristor comprises, from bottom to top, a substrate, a bottom electrode, a dielectric layer and a top electrode, the top electrode and the bottom electrode are used for connecting positive voltage and negative voltage respectively, and the dielectric layer is an indium aluminum zinc oxide layer. The preparation process of the memristor is simple, the resistance change performance changes little, and the consistency, cycle number and maintenance time are excellent. The application can realize the preparation of transparent memristor by replacing the electrode, has important potential in the field of photoelectric application, has non-volatile and volatile resistance change characteristics under different electrode selection, can simulate the synaptic plasticity of biology and the function of pain receptor of biology, and has important prospect in realizing brain-like neuromorphic computing.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of memristor, and particularly relates to a neuromorphic memristor based on indium aluminum zinc oxide, a preparation method and equipment. BACKGROUND

[0002] The statements in this section merely provide background information related to the application and do not necessarily constitute the prior art.

[0003] Memristors have been studied for developing memory and computing systems due to their fast operation speed, low energy consumption, small feature size and other characteristics. Memristors are also considered as excellent simulators of biological synapses and neurons, which are basic elements of brain-inspired neuromorphic computing. Novel memory and computing systems can completely change the current computer capacity. Memristors are divided into non-volatile memory switching (MS) and volatile threshold switching (TS) according to the retention time. In non-volatile MS, both the low resistance state (LRS) and the high resistance state (HRS) can be maintained for a long time after the applied bias voltage is removed, until the SET voltage or the RESET voltage is applied to modulate the resistance state. In contrast, the LRS cannot be maintained in the volatile TS after the voltage is removed. Non-volatile MS can be used to simulate the plasticity of biological synapses. On the other hand, volatile TS can be used to realize artificial nociceptors. Multifunctional memristors supporting multiple functions are very attractive to memory and computing systems. So far, few studies have involved memristors with the same medium layer, which can ensure excellent stability, a large storage window and multifunctional neuromorphic applications.

[0004] Currently, amorphous oxide semiconductors (AOS) represented by In-Ga-Zn-O (IGZO) have received extensive attention and in-depth research. IGZO has become a mature TFT channel material due to its high light transmittance, high electron mobility, low preparation temperature and other advantages. In addition to being used as a channel material, IGZO thin film also has good resistive switching performance and is suitable for the preparation of non-volatile memory cell devices.

[0005] The inventors have found that IGZO memristors still have some problems: the band gap of IGZO is relatively narrow (3.2eV); In and Ga are rare elements and are expensive; IGZO memristors are also unstable under different environmental conditions. SUMMARY

[0006] In order to solve the technical problems existing in the background art, the application provides a neuromorphic memristor based on indium aluminum zinc oxide, a preparation method and equipment, wherein the neuromorphic memristor based on indium aluminum zinc oxide adopts a ternary oxide IAZO (In-Al-Zn-O, indium aluminum zinc oxide) thin film, has low preparation cost, a large band gap range and is easy to control.

[0007] To achieve the above object, the present application adopts the following technical solutions:

[0008] The first aspect of the present application provides an indium aluminum zinc oxide-based neuromorphic memristor.

[0009] An indium aluminum zinc oxide-based neuromorphic memristor, comprising a substrate, a bottom electrode, a dielectric layer and a top electrode arranged in sequence from bottom to top, the top electrode and the bottom electrode are used to connect positive voltage and negative voltage respectively, and the dielectric layer is an indium aluminum zinc oxide layer.

[0010] As an embodiment, the substrate is a titanium-gold substrate, the bottom electrode is a gold layer, and the top electrode is a silver layer deposited by electron beam evaporation.

[0011] As an embodiment, the dielectric layer is formed on the titanium-gold substrate by magnetron sputtering.

[0012] As an embodiment, the substrate is transparent glass, the bottom electrode is an indium tin oxide layer, and the top electrode is an aluminum layer deposited by a thermal evaporation coating system.

[0013] As an embodiment, the dielectric layer is formed on the indium tin oxide glass substrate by magnetron sputtering.

[0014] The second aspect of the present application provides a preparation method of an indium aluminum zinc oxide-based neuromorphic memristor.

[0015] In one or more embodiments, a preparation method of an indium aluminum zinc oxide-based neuromorphic memristor comprises:

[0016] Titanium-gold layer is used as the substrate, and gold layer is used as the bottom electrode.

[0017] Indium aluminum zinc oxide layer is deposited by magnetron sputtering, and indium aluminum zinc oxide thin film is used as the dielectric layer.

[0018] The deposited indium aluminum zinc oxide thin film is annealed in an air environment at a set temperature for a preset time.

[0019] Silver layer is deposited by electron beam evaporation, and silver layer is used as the top electrode layer; a circular pattern mask plate with a set diameter is used to deposit a silver layer top electrode with a set thickness by electron beam evaporation, and then the mask plate with the top electrode pattern is removed, to obtain an indium aluminum zinc oxide memristor with non-volatile resistive switching characteristics.

[0020] As an implementation form, at room temperature, indium aluminum zinc oxide with a set thickness is deposited on a gold layer bottom electrode by radio frequency magnetron sputtering, the atomic ratio of the target material is In:Al:Zn=2:1:1, the mixed environment pressure during sputtering is 4.20 mTorr, the power of the magnetron sputtering is set to 90 W, and the vacuum degree during sputtering is less than 1*10 -6 Torr.

[0021] In one or more embodiments, a preparation method of an indium aluminum zinc oxide-based neuromorphic memristor includes:

[0022] Transparent glass is used as a substrate, and an indium tin oxide layer is used as a bottom electrode layer.

[0023] An indium aluminum zinc oxide layer is deposited by magnetron sputtering, and the indium aluminum zinc oxide thin film is used as a medium layer.

[0024] An aluminum layer is deposited by a thermal evaporation film deposition system, and the aluminum layer is used as a top electrode layer; a circular pattern mask plate with a set diameter is used to deposit an aluminum layer top electrode with a set thickness by thermal evaporation, and then the mask plate with the top electrode pattern is removed, to obtain an indium aluminum zinc oxide memristor with volatile resistive switching characteristics.

[0025] As an implementation form, at room temperature, indium aluminum zinc oxide with a set thickness is deposited on an indium tin oxide bottom electrode by radio frequency magnetron sputtering, the atomic ratio of the target material is In:Al:Zn=2:1:1, the mixed environment pressure during sputtering is 4.20 mTorr, the power of the magnetron sputtering is set to 90 W, and the vacuum degree during sputtering is less than 1*10 -6 Torr.

[0026] A third aspect of the present application provides an electronic device.

[0027] An electronic device includes the indium aluminum zinc oxide-based neuromorphic memristor described above.

[0028] Compared with the prior art, the present application has the following beneficial effects:

[0029] The IAZO neuromorphic memristor provided by the present application adopts a novel ternary oxide IAZO thin film, has low preparation cost, high carrier concentration adjustment capability, a large band gap range, and the like, and has excellent characteristics such as easy adjustment; the IAZO neuromorphic memristor provided by the present application selects a simple "sandwich" structure, and realizes the preparation of a transparent device by replacing a bottom electrode, and has important potential in the field of optoelectronic applications.

[0030] The IAZO neuromorphic memristor provided by the application has different resistance transition characteristics corresponding to different electrode selections, and has non-volatile and volatile resistance transition characteristics; the non-volatile characteristic of the IAZO neuromorphic memristor provided by the application can simulate the synaptic plasticity function of a living being, and provides potential important application for effective neuromorphic calculation; the volatile characteristic of the IAZO neuromorphic memristor provided by the application can simulate the nociceptor function of a living being, and has important application prospect for simulating artificial neuron function and applying in brain-like operation.

[0031] Advantages of the additional aspects of the application will be partially given in the following description, partially will become obvious from the following description, or will be understood by the practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0032] The drawings accompanying the specification of the application are used to provide further understanding of the application, the illustrative embodiments of the application and the description thereof are used to explain the application, and do not constitute improper limitation on the application.

[0033] Figure 1 The structure schematic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment of the application;

[0034] Figure 2 The non-volatile current-voltage characteristic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 1 of the application;

[0035] Figure 3 The volatile current-voltage characteristic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 2 of the application;

[0036] Figure 4 The gradual modulation conductance diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 3 of the application;

[0037] Figure 5 The electronic synapse simulation LTP and LTD characteristic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 3 of the application;

[0038] Figure 6 The electronic synapse simulation PPF characteristic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 3 of the application;

[0039] Figure 7 The electronic synapse simulation STDP characteristic diagram of the neuromorphic memristor based on indium aluminum zinc oxide of the embodiment 3 of the application;

[0040] Figure 8(a) is the nociceptor "threshold trigger" pulse response diagram of the neuromorphic memristor based on indium aluminum zinc oxide when the fixed pulse duration is 0.5 ms in the embodiment 4 of the application;

[0041] Figure 8(b) shows the "threshold trigger" pulse response of the pain receptor based on the indium aluminum zinc oxide neuromorphic memristor in Embodiment 4 of the present invention when the fixed pulse amplitude is 2V.

[0042] Figure 9 This is a diagram of the "relaxation" pulse response of the pain receptor based on the indium aluminum zinc oxide neuromorphic memristor in Embodiment 4 of the present invention.

[0043] Figure 10 This is a diagram of the "unadaptive" impulse response of the pain receptor of the neuromorphic memristor based on indium aluminum zinc oxide in Embodiment 4 of the present invention. Detailed Implementation

[0044] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0045] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the invention. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0046] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of exemplary embodiments according to the invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0047] <Neuromorphic memristors based on indium aluminum zinc oxide>

[0048] like Figure 1 As shown, a neuromorphic memristor based on indium aluminum zinc oxide in this embodiment includes a substrate, a bottom electrode, a dielectric layer and a top electrode arranged sequentially from bottom to top. The top electrode and the bottom electrode are used to connect to a positive voltage and a negative voltage, respectively. The dielectric layer is an indium aluminum zinc oxide layer.

[0049] In some embodiments, the substrate is a titanium-gold substrate, the bottom electrode is a gold layer, and the top electrode is a silver layer grown by electron beam evaporation. The dielectric layer is formed on the titanium-gold substrate by magnetron sputtering.

[0050] The embodiment adopts a common bottom electrode structure, the substrate and the bottom electrode are titanium-gold substrates, the dielectric layer is formed on the titanium-gold substrate by a magnetron sputtering method, and the top electrode is a silver layer (Ag) grown by electron beam evaporation. Further research of the application shows that after the IAZO thin film is subjected to annealing treatment, the IAZO thin film remains in an amorphous state and exhibits a flat surface morphology and a small root mean square roughness. According to the research results of the application, the memristor exhibits forming-free and recyclable non-volatile resistance switching behavior. Moreover, by subjecting the IAZO thin film to annealing treatment, the oxygen vacancy concentration in the resistance change layer can be effectively limited, thereby generating a smaller performance change, and the memristor has good consistency, durability, cycle number and maintenance time, proving the reliable non-volatile data storage capability of the device and further enabling the simulation of artificial electronic synapse functions.

[0051] In some other embodiments, the substrate is transparent glass, the bottom electrode is an indium tin oxide layer, and the top electrode is an aluminum layer deposited by a thermal evaporation coating system.

[0052] The simple and transparent IAZO memristor structure simulates the function of biological nociceptors. The memristor exhibits forming-free and repeatable volatile threshold resistance switching behavior, and the basic characteristics of biological nociceptors, including "threshold triggering", "relaxation" and "non-adaptation" characteristics, have been realized in the IAZO memristor, which is of great significance for the development of artificial intelligence systems and prosthetics and electronic skin.

[0053] The embodiment provides a three-layer structure memristor with a common bottom electrode, which uses an amorphous indium-aluminum-zinc oxide (In-Al-Zn-O) thin film with excellent photoelectric performance as a resistance change medium layer of the memristor. The embodiment successfully synthesizes an amorphous IAZO thin film by radio frequency magnetron sputtering and first studies the resistance switching behavior thereof, realizes the functions of artificial synapses and pain receptors, and thus proves the application of neuromorphic computing.

[0054] Compared with the prior art, IAZO is a potential substitute for IGZO for preparing a memristor. The replacement of Ga with Al not only reduces the cost but also improves the ability to adjust the carrier concentration because Al-O has a higher bond energy than Ga-O. In addition, due to the large band gap (8.7 eV) of Al2O3, the band gap of IAZO can be adjusted in a much larger range than IGZO. Therefore, the study of the IAZO-based memristor is conducive to using a simple and effective radio frequency magnetron sputtering preparation method to improve the durability, uniformity and other performances of the IAZO memristor.

[0055] <Method for preparing an indium-aluminum-zinc oxide-based neuromorphic memristor>

[0056] Embodiment 1

[0057] This embodiment provides a method for fabricating a neuromorphic memristor based on indium aluminum zinc oxide, including:

[0058] Step 1: Use a titanium-gold layer as the substrate and a gold layer as the bottom electrode 3.

[0059] Step 2: Deposit an indium aluminum zinc oxide layer by magnetron sputtering, using the indium aluminum zinc oxide thin film as dielectric layer 2.

[0060] At room temperature, an indium aluminum zinc oxide (IZO) layer of a predetermined thickness was deposited on a gold substrate electrode using radio frequency magnetron sputtering. The target atomic ratio was In:Al:Zn = 2:1:1. The mixing environment pressure during sputtering was 4.20 m Torr, the magnetron sputtering power was set to 90 W, and the vacuum level during sputtering was below 1*10⁻⁶. -6 Torr.

[0061] Step 3: The deposited indium aluminum zinc oxide film is annealed in an air environment at a set temperature for a preset time.

[0062] For example, the deposited IAZO film was annealed in air at 250°C for 60 minutes.

[0063] Step 4: Deposit a silver layer by electron beam evaporation, with the silver layer serving as the top electrode layer 1; using a circular patterned mask of a set diameter, deposit a silver top electrode of a set thickness by electron beam evaporation, and then remove the mask with the top electrode pattern to obtain an indium aluminum zinc oxide memristor with non-volatile resistive switching characteristics.

[0064] For example, using a circular patterned mask with a diameter of 50 μm, an Ag top electrode with a thickness of 70 nm is deposited by electron beam evaporation. Subsequently, the mask with the top electrode pattern is removed to obtain an IAZO memristor with non-volatile resistive switching characteristics.

[0065] like Figure 2 As shown, the electrical characteristics of the memristor based on the non-volatile resistive switching characteristics of IAZO in this embodiment are described in detail:

[0066] The electrical characteristics of the memristor were characterized on a probe station using a Keysight B2902A source meter in room temperature air. During testing, a voltage bias was always applied to the top electrode of the Ag electrode, while the bottom electrode of the Au electrode was grounded. Figure 2The typical bipolar resistive switching characteristics of the IAZO-based nonvolatile memristor are shown. Under negative voltage, the memristor gradually switches from high resistance state (HRS) to low resistance state (LRS), which is defined as the set process; when the resistance switches from LRS to HRS under positive voltage, the reset process is observed, thus realizing nonvolatile bipolar resistance switching. Moreover, the first full cycle scan (0V→-2V→2V→0V) is forming-free process, i.e. no initialization electric forming process is needed. Figure 2 The significant performance contrast between the annealed and unannealed memristors is shown. It is worth noting that the working voltage and switching ratio of the IAZO-based nonvolatile memristor show good periodicity, in which the resistive switching behavior can be repeated for more than 100 cycles without obvious degradation.

[0067] The IAZO-based nonvolatile memristor of the embodiment has simple structure and simple preparation process. The device has good nonvolatile characteristics and very good stability, and the resistance transition type is gradual rather than abrupt, which is more conducive to realizing step-by-step regulation of the device conductance, and can be applied to brain-like neural morphological operation as an analog artificial electronic synapse.

[0068] Embodiment 2

[0069] The embodiment provides a preparation method of an indium-aluminum-zinc oxide-based neuromorphic memristor, comprising the following steps:

[0070] Step 1: taking transparent glass as a substrate and an indium tin oxide layer as a bottom electrode layer.

[0071] Step 2: depositing an indium-aluminum-zinc oxide layer by magnetron sputtering to take an indium-aluminum-zinc oxide thin film as a medium layer.

[0072] At room temperature, an IAZO with a thickness of 50 nm is deposited on the Au bottom electrode by radio frequency magnetron sputtering, and the atomic ratio of the target material is In:Al:Zn=2:1:1. During the sputtering process, the mixed environment pressure (Ar:O2=20:0 sccm) is 4.20 m Torr, the power of the magnetron sputtering is set to 90 W, and the vacuum degree is lower than 1*10-6 Torr during sputtering.

[0073] Step 3: depositing an aluminum layer by a thermal evaporation film plating system, taking the aluminum layer as a top electrode layer; using a circular pattern mask plate with a set diameter, depositing an aluminum layer top electrode with a set thickness by thermal evaporation, and then removing the mask plate with the top electrode pattern to obtain an indium-aluminum-zinc oxide memristor with volatile resistive switching characteristics.

[0074] For example, a 100 nm thick Al top electrode is deposited by thermal evaporation using a circular patterned mask with a diameter of 50 μm, and then the mask with the top electrode pattern is removed to obtain an IAZO memristor with a volatile resistive switching property.

[0075] As shown in Figure 3 , the electrical characteristics of the IAZO-based memristor with a volatile resistive switching property in the embodiment are described in detail:

[0076] The electrical characteristics of the memristor are tested and characterized on a probe station in room temperature air using a Keysight B2902A source meter. In the test, the voltage bias is always applied to the top electrode of the Al electrode, and the bottom electrode of the ITO electrode is grounded. Figure 3 The threshold switching characteristics of the IAZO-based volatile memristor are shown. When the applied voltage increases to about 2 V, the device exhibits an initial HRS, and then transitions to an LRS with a rapid increase in current; when the positive voltage scan is removed, the device automatically switches to a high memory window of 10 6 HRS. Then, a second scan voltage is applied again, and the device still exhibits an HRS at the beginning, and transitions to an LRS at Vth, which is almost coincident with the first scan, exhibiting typical threshold switching and forming-free characteristics of a volatile memristor.

[0077] In the embodiment, as a further preferred embodiment of the application, the bottom electrode is replaced with a transparent indium tin oxide glass, and the top electrode is replaced with an Al layer grown by thermal evaporation plating, to realize a transparent IAZO-based memristor with a volatile resistive switching property, which can be used as a new type of transparent device. The device has good volatile characteristics, and does not require additional electrical forming operations, can mimic the main characteristics of a biological pain receptor, or simulate artificial neuron functions and be used in brain-like computing.

[0078] <Electronic device>

[0079] In one or more embodiments, an electronic device is provided, comprising an indium aluminum zinc oxide-based neuromorphic memristor as described above.

[0080] It should be noted here that the electronic device in the embodiment can be a chip or a micro memory device.

[0081] Embodiment 3

[0082] The embodiment shows an application scenario of a multifunctional IAZO-based neuromorphic memristor, specifically, an IAZO memristor with a non-volatile resistive switching property in application embodiment 1 is used to study and simulate the synaptic plasticity function of a living organism, and is combined Figures 4-7 to be described in detail:

[0083] AsFigure 4 As shown, ten positive voltages (from 0 to -0.5V, then back to 0V) were continuously applied to the Au electrode. The current increased with each scan. Next, ten negative scan voltages (from 0 to 0.5V, then back to 0V) were applied. Therefore, the current decreased with each scan. Unlike resistive switches used in digital memory, this slowly varying, nonlinear current characteristic from both positive and negative directions is analogous to the continuous modulation of synaptic weights in biology caused by enhancing or inhibiting stimuli.

[0084] like Figure 5 As shown, by applying 50 consecutive positive pulses (-1.3V) followed immediately by 50 negative pulses (1.2V), the synaptic weight can be enhanced or weakened. This behavior indicates that the device can achieve long-term enhancement (LTP) and long-term inhibition (LTD) characteristics of synapses by regulating the formation and diffusion of conductive filaments, which is consistent with biological synapses.

[0085] like Figure 6 As shown, short-term memory synaptic plasticity plays a crucial role in synaptic computation and information processing. When two excitatory presynaptic pulses are applied consecutively, the excitatory postsynaptic current generated by the second pulse is greater than that of the first pulse; this phenomenon is known as two-pulse facilitation (PPF). It can be observed that as the pulse interval decreases, the memory of the pre-peak pulse in the Ag / IAZO / Au memristor is enhanced within consecutive pulses, which is consistent with biological synapses.

[0086] like Figure 7 As shown, peak time-dependent plasticity (STDP) is illustrated. For long-term synaptic plasticity, STDP is an improved neural synaptic learning model based on the traditional Hebbian learning rule, representing a crucial synaptic learning behavior. That is, different presynaptic and postsynaptic peak signals significantly influence the sign and magnitude of long-term synaptic plasticity; the sign and magnitude of synaptic plasticity differ under various conditions. The conductance weights (ΔW) before and after the peak change with the time difference (Δt). Therefore, by precisely controlling the interval and sequence between voltage pulses, the STDP of biological synapses can be successfully simulated.

[0087] When pre-synaptic and post-synaptic triangular pulse pairs with 1-5 ms were applied on the Ag / IAZO / Au memristor, the synaptic weight was enhanced when the pre-synaptic pulse occurred before the post-synaptic pulse (Δt>0); in contrast, the synaptic weight was reduced when the pre-synaptic pulse occurred after the post-synaptic pulse (Δt<0). These synaptic weight changes implied similar STDP characteristics to biological synapses, which could be well fitted by an exponential decay function. This finding enabled us to achieve the STDP function in the IAZO memristor through simple pulse pairs, greatly reducing the complexity of algorithm and circuit design, and providing potential important applications for efficient neuromorphic computing.

[0088] Embodiment 4

[0089] The embodiment shows an application scenario of an IAZO-based multifunctional neuromorphic memristor. Specifically, the IAZO memristor with volatile resistive switching characteristics in Embodiment 3 is used to study the biological nociceptor function, combined with Figures 8(a)-10 The detailed description is as follows:

[0090] As shown in FIG. 8(a), the pulse duration is fixed at 0.5 ms, and the amplitude is set to pulse signals with increasing amplitudes of 0.5 V, 1 V, 1.5 V, 2 V, and 2.5 V. At 0.5 V, 1 V, and 1.5 V, the current response of the artificial nociceptor based on the IAZO volatile memristor is small; only when the pulse amplitude reaches 2 V and 2.5 V, the device switches to the LRS with a larger output current, indicating that the artificial nociceptor is activated. This behavior can be used to simulate the influence of the pain stimulus intensity parameter on the threshold triggering of the action potential in the biological nociceptor. In the artificial nociceptor, this threshold behavior is simulated by applying a series of voltage pulses with different amplitudes to the memristor.

[0091] As shown in FIG. 8(b), the pulse amplitude is fixed at 2 V, and the amplitude duration is set to pulse signals with increasing amplitudes of 0.05 ms, 0.125 ms, 0.25 ms, 0.375 ms, and 0.5 ms. At 0.05 ms, 0.125 ms, and 0.25 ms, the current response of the artificial nociceptor based on the IAZO volatile memristor is small; only when the pulse duration reaches 0.375 ms and 0.5 ms, the device switches to the LRS with a larger output current, indicating that the artificial nociceptor is activated. This behavior can be used to simulate the influence of the pain stimulus duration parameter on the threshold triggering of the action potential in the biological nociceptor. In the artificial nociceptor, this threshold behavior is simulated by applying a series of voltage pulses with different widths to the memristor.

[0092] As Figure 9As shown, after a 1.5V pulse (below the threshold) with a fixed width of 0.5ms, a 2.5V pulse (as a noxious stimulus) is applied at intervals ranging from 0.5ms to 100ms. For shorter pulse intervals (i.e., 0.5ms, 1ms, and 5ms), the pain receptors respond to the 1.5V input pulse, and the sensitivity increases as the interval decreases. However, when the interval is extended to 100ms, the pain receptors do not respond to the 2.5V pulse, indicating that the pain receptors are completely relaxed and have returned to their initial state. This behavior can be used to simulate the "relaxation" characteristic of pain receptors in organisms to noxious stimuli. After experiencing a noxious stimulus, the pain receptors begin a "relaxation" process, which takes time to return to their initial state.

[0093] like Figure 10 As shown, continuous repetitive pulses with different amplitudes (1.5, 2, and 2.5V), fixed pulse widths (0.5ms), and intervals (0.5ms) were used. The artificial pain receptor based on the IAZO volatile memristor exhibited a sudden increase in output current after 2.5ms and 0.5ms with input pulses of 1.5V and 2V, respectively, followed by an immediate current jump with a higher input pulse of 2.5V. This behavior can be used to simulate the "non-adaptive" characteristics of biological pain receptors to painful stimuli. Pain receptors respond rapidly to stronger stimuli, but require more pulses to activate the device if the amplitude is low. This low-resistance device maintains an almost constant current level even under additional repetitive input pulses, indicating that the same noxious stimulus does not increase or decrease the intensity of the response.

[0094] This embodiment synthesizes amorphous IAZO thin films via radio frequency magnetron sputtering and investigates for the first time their inherent non-volatile resistive switching behavior. Furthermore, it simulates synaptic plasticity, including long-term enhancement (LTP) and inhibition (LTD), two-pulse facilitation (PPF), and peak time-dependent plasticity (STDP), demonstrating the excellent properties of artificial synapses and exciting opportunities for fundamental research and next-generation electronics. Further research in this invention shows that IAZO thin films exhibit artificial nociceptors based on transparent memristors, simulating key features of “threshold triggering,” “relaxation,” and “adaptability” in a single device, facilitating the development of artificial sensory systems such as electronic skin, prosthetics, and humanoid robots.

[0095] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A neuromorphic memristor based on indium aluminum zinc oxide, comprising a substrate, a bottom electrode, a dielectric layer, and a top electrode arranged sequentially from bottom to top, wherein the top electrode and the bottom electrode are used to connect a positive voltage and a negative voltage, respectively, characterized in that, The dielectric layer is an indium aluminum zinc oxide layer.

2. The neuromorphic memristor based on indium aluminum zinc oxide as described in claim 1, characterized in that, The substrate is a titanium-gold substrate, the bottom electrode is a gold layer, and the top electrode is a silver layer grown by electron beam evaporation.

3. The neuromorphic memristor based on indium aluminum zinc oxide as described in claim 2, characterized in that, The dielectric layer is formed on a titanium-gold substrate by magnetron sputtering.

4. The neuromorphic memristor based on indium aluminum zinc oxide as described in claim 1, characterized in that, The substrate is transparent glass, the bottom electrode is an indium tin oxide layer, and the top electrode is an aluminum layer deposited by a thermal evaporation coating system.

5. The neuromorphic memristor based on indium aluminum zinc oxide as described in claim 4, characterized in that, The dielectric layer is formed on an indium tin oxide glass substrate by magnetron sputtering.

6. A method for fabricating a neuromorphic memristor based on indium aluminum zinc oxide, characterized in that, include: Step 1: Use a titanium-gold layer as the substrate and a gold layer as the bottom electrode; Step 2: Deposit an indium aluminum zinc oxide layer by magnetron sputtering, using the indium aluminum zinc oxide thin film as the dielectric layer; Step 3: Anneal the deposited indium aluminum zinc oxide film in an air environment at a set temperature for a preset time; Step 4: Deposit a silver layer by electron beam evaporation, with the silver layer serving as the top electrode layer; using a circular patterned mask of a set diameter, deposit a silver top electrode of a set thickness by electron beam evaporation, and then remove the mask with the top electrode pattern to obtain an indium aluminum zinc oxide memristor with non-volatile resistive switching characteristics.

7. The method for fabricating a neuromorphic memristor based on indium aluminum zinc oxide as described in claim 6, characterized in that, At room temperature, an indium aluminum zinc oxide (IZO) layer of a predetermined thickness was deposited on a gold substrate electrode using radio frequency magnetron sputtering. The target atomic ratio was In:Al:Zn = 2:1:

1. The mixing environment pressure during sputtering was 4.20 m Torr, the magnetron sputtering power was set to 90 W, and the vacuum level during sputtering was below 1*10⁻⁶. -6 Torr.

8. A method for fabricating a neuromorphic memristor based on indium aluminum zinc oxide, characterized in that, include: Step 1: Use transparent glass as a substrate and indium tin oxide as the bottom electrode layer; Step 2: Deposit an indium aluminum zinc oxide layer by magnetron sputtering, using the indium aluminum zinc oxide thin film as the dielectric layer; Step 3: Deposit an aluminum layer using a thermal evaporation coating system, with the aluminum layer serving as the top electrode layer; using a circular patterned mask of a set diameter, deposit an aluminum layer of a set thickness as the top electrode through thermal evaporation, and then remove the mask with the top electrode pattern to obtain an indium aluminum zinc oxide memristor with volatile resistive switching characteristics.

9. The method for fabricating a neuromorphic memristor based on indium aluminum zinc oxide as described in claim 8, characterized in that, At room temperature, indium aluminum zinc oxide (IZO) of a predetermined thickness was deposited on an indium tin oxide (ITO) substrate using radio frequency magnetron sputtering. The target atomic ratio was In:Al:Zn = 2:1:

1. The mixing environment pressure during sputtering was 4.20 m Torr, the magnetron sputtering power was set to 90 W, and the vacuum level during sputtering was below 1*10⁻⁶. -6 Torr.

10. An electronic device, characterized in that, Including neuromorphic memristors based on indium aluminum zinc oxide as described in any one of claims 1-5.

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