A method for epitaxially growing semiconductor micron wire arrays on mica surface

Abstract

This application discloses a method for epitaxially growing a semiconductor micron-wire array on a mica surface, comprising the steps of: first, constructing a high adsorption region on a smooth mica substrate; then, vapor-phase epitaxially growing the semiconductor micron-wire array on the mica substrate surface. By constructing the high adsorption region on the mica surface, the method allows vapor-phase atoms to preferentially nucleate in this region. In-plane micron-wires epitaxially grown perpendicular to the boundary of the high adsorption region have a greater growth competitive advantage, while in-plane micron-wires epitaxially grown in other directions are easily terminated, halting their growth. Ultimately, an orderly arranged one-dimensional micron-wire array structure is formed.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor micro-nanostructure preparation, and in particular to a method for preparing a semiconductor micron wire array. Background Art

[0002] One-dimensional semiconductor materials have attracted widespread attention due to their unique one-dimensional structure, high physical and chemical stability, and excellent optoelectronic properties, and have great application potential in high-performance optics, electronics, optoelectronic devices and other fields. With the advent of the post-Moore era, there is a more urgent demand for high performance, miniaturization and high planar integration of optoelectronic devices. However, the growth of one-dimensional semiconductor materials is usually disordered. They are randomly distributed on the substrate and have uneven morphology, growth direction and crystal quality. Although scientists can study the performance and application of individual devices by transferring these one-dimensional semiconductor materials to other substrates, this is not conducive to the preparation and in-plane integration of the devices. Therefore, it is necessary to find a simple and efficient preparation method to obtain ordered arrays of semiconductor one-dimensional micro / nanowires grown in a plane.

[0003] Scientists have done a lot of research on the preparation of one-dimensional semiconductor ordered arrays. For example, one-dimensional semiconductor structures are arranged in an orderly manner with the assistance of templates to form arrays, or semiconductor films are etched from top to bottom into one-dimensional semiconductor ordered arrays through photolithography technology, or nanowires are arranged in an orderly manner by surface hydrophilicity to form arrays. However, these methods are relatively cumbersome and have high selectivity for materials, making it difficult to achieve large-scale preparation of one-dimensional semiconductor ordered arrays. Using vapor deposition technology to directly grow one-dimensional arrays of semiconductor materials through the guidance of micro-channels on the surface of the substrate is an effective method. However, this method has special requirements for the growth substrate, and the substrate surface needs to have nanoscale channel arrangements such as V-shaped and stepped shapes, which limits the scope of application of this method.

[0004] Mica is a layered material with an atomically smooth van der Waals (001) surface and a six-fold symmetric crystal structure. Single-crystal mica substrates are inexpensive and suitable for large-area epitaxial growth. However, due to the six-fold symmetry of the mica surface, semiconductor micro- / nanowires epitaxially grown on mica typically have three different epitaxial orientations, making it difficult to form an ordered one-dimensional array of these semiconductor micro- / nanowires.

[0005] Therefore, how to realize direct epitaxial growth of one-dimensional arrays of semiconductor materials on mica substrates is a technical problem that needs to be solved urgently. Summary of the Invention

[0006] The present application aims to provide a method for epitaxially growing semiconductor micrometer-wire arrays on mica surfaces to address the shortcomings of the aforementioned background technologies. By constructing a high adsorption region on the mica surface, the present invention allows gas-phase atoms to preferentially nucleate in this region. This gives in-plane micrometer-wires epitaxially grown perpendicular to the high adsorption region a greater competitive growth advantage, while in-plane micrometer-wires epitaxially grown in other directions are easily terminated, halting their growth. This ultimately forms an orderly arranged one-dimensional micrometer-wire array structure.

[0007] To achieve the above objectives, the technical solution adopted in this application is to provide a method for epitaxially growing a semiconductor micron wire array on a mica surface, comprising the following steps:

[0008] Step (1) constructing a high adsorption area on the surface of the mica substrate;

[0009] Step (2) epitaxially grows a semiconductor micrometer wire array on the boundary of the high adsorption region of the mica substrate by vapor deposition.

[0010] The mica substrate includes muscovite and fluorophlogopite, and the semiconductor has the characteristic of being able to epitaxially grow into a one-dimensional linear structure with multiple orientations on the surface of the mica substrate.

[0011] As a preference, in step (1), the method for constructing a high adsorption area on the mica surface is: spreading graphite powder on the surface of the mica substrate, and utilizing the adsorption characteristics of graphite for gaseous atoms to form a high adsorption area.

[0012] More preferably, in step (2), the temperature of the vapor deposition is 300-450°C.

[0013] Compared with the prior art, the present invention has the following advantages:

[0014] The present invention uses graphite to construct a high adsorption area on the smooth mica (001) surface, so that gas-phase atoms preferentially nucleate in this area. The in-plane micron wires that epitaxially grow perpendicular to the boundary of the high adsorption area have a greater growth competitive advantage, while the growth front ends of the in-plane micron wires epitaxially grown in other directions are easily cut off and stop growing, ultimately forming an orderly arranged one-dimensional micron wire array structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of a method for epitaxially growing a semiconductor micrometer wire array on a mica surface according to the present invention;

[0016] Figure 2 This is a scanning electron microscope image of a CsPbBr3 micrometer wire array according to an embodiment of the present invention;

[0017] Figure 3This is a scanning electron microscope image of CsPbBr3 micrometer wires grown on a smooth mica surface according to an embodiment of the present invention;

[0018] Figure 4 : This is the fluorescence spectrum of the CsPbBr3 micrometer line array according to an embodiment of the present invention;

[0019] Figure 5 This is a scanning image of element distribution of the CsPbBr3 micrometer line array according to an embodiment of the present invention. DETAILED DESCRIPTION

[0020] Below, the present application is further described in conjunction with specific implementation methods. It should be noted that, under the premise of no conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0021] The terms "comprises" and "having" and any variations thereof in the specification and claims of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus that includes a series of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, product or apparatus.

[0022] The schematic diagram of the method of epitaxially growing semiconductor micron wire array on mica surface of the present application is as follows Figure 1 shown.

[0023] The specific steps of the technical solution provided by this application are as follows:

[0024] Step (1): Select the (001) surface of mica as the epitaxial growth substrate of the semiconductor micron wire, and cover a part of the mica surface with graphite powder to construct a high adsorption area of ​​gas-phase atoms;

[0025] Step (2): epitaxially growing a semiconductor micrometer wire array on the surface of the mica substrate using a vapor deposition technique.

[0026] Among them, mica includes muscovite and fluorophlogopite, and vapor deposition technology includes chemical vapor deposition and physical vapor deposition.

[0027] The semiconductor in step (2) has the characteristic of being able to epitaxially grow on the surface of the mica substrate into a one-dimensional linear structure with various orientations.

[0028] Preferably, in step (2), the temperature of vapor phase epitaxial deposition is 300-450°C.

[0029] Example

[0030] A semiconductor micrometer wire array epitaxially grown on a mica surface is prepared.

[0031] Step (1): Use the (001) surface of single crystal muscovite as the epitaxial growth substrate of semiconductor CsPbBr3 micron wires, and cover part of the mica surface with graphite powder to construct a high adsorption area of ​​gas-phase atoms.

[0032] In step (2), cesium bromide and lead bromide powders are placed in the center of a tube furnace as precursor materials for chemical vapor deposition, and the mica substrate obtained in step 1 is placed in a downstream deposition zone of the tube furnace. The tube furnace is then heated to a temperature of 600° C. in the central region, and the temperature of the deposition zone is maintained at 350° C. The heating is maintained for 30 minutes, and the temperature of the tube furnace is then lowered to room temperature.

[0033] Experimental analysis: The samples prepared above were observed under a scanning electron microscope. The specific results are shown in Figure 2 Compared with the pure mica surface, the number of micron-wire nuclei in the high adsorption area constructed by graphite is greater. The epitaxial growth of micron-wires on the mica substrate surface has three orientations. Among them, the growth of micron-wires with the epitaxial orientation perpendicular to the boundary of the high adsorption area is more likely to dominate, while the growth of micron-wires in the other two orientations is more likely to be cut off and stop growing, eventually resulting in the growth of a one-dimensional micron-wire array structure perpendicular to the boundary of the high adsorption area.

[0034] As a comparison, in step 2, a smooth mica substrate without a high adsorption area was used for vapor deposition. The scanning electron microscope image of the prepared sample is shown in FIG. Figure 3 The growth of microwires in the three orientations is nearly equivalent, and no array structure is ultimately formed. This demonstrates that constructing a highly adsorbed region on the mica surface is a prerequisite for growing one-dimensional microwire array structures.

[0035] The fluorescence emission spectrum of the micrometer line array prepared above was tested. The specific spectrum is shown in Figure 4 The microwire array exhibited green fluorescence with a peak at 520 nm, corresponding to the radiative recombination of CsPbBr3 excitons. This confirmed that the microwires were CsPbBr3 semiconductor microwires.

[0036] Take the micrometer line array prepared above to test the X-ray energy spectrum, the specific spectrum is shown in Figure 5 The micrometer wire array shows a uniform distribution of Cs, Pb, and Br elements, proving that the above micrometer wires are CsPbBr3 semiconductor micrometer wires.

[0037] The above describes the basic principles, main features, and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above embodiments. The above embodiments and description merely illustrate the principles of the present application. Various changes and improvements may be made to the present application without departing from the spirit and scope of the present application. These changes and improvements are intended to fall within the scope of the present application. The scope of protection claimed by the present application is defined by the appended claims and their equivalents.

Claims

1. A method for epitaxially growing a semiconductor microwire array on a mica surface, characterized in that: The following steps are involved: Step (1) constructing a high adsorption area on the surface of the mica substrate; Step (2) epitaxially growing a semiconductor micrometer wire array on the boundary of the high adsorption region of the mica substrate by vapor deposition; The mica substrate includes muscovite and fluorphlogopite, and the semiconductor has the characteristic of being able to epitaxially grow into a one-dimensional linear structure with various orientations on the surface of the mica substrate; The semiconductor microwire array is CsPbBr3; In the step (1), the method for constructing a high adsorption area on the surface of the mica substrate is: spreading graphite powder on the surface of the mica substrate, and utilizing the adsorption characteristics of graphite for gaseous atoms to form a high adsorption area.

2. The method for epitaxially growing a semiconductor microwire array on a mica surface according to claim 1, wherein: In the step (2), the temperature of the vapor deposition is 300-450°C.

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