A semiconductor laser element provided with a thermoelectric rectification layer

Abstract

The present invention provides a semiconductor laser element provided with a thermoelectric rectification layer, which relates to the technical field of semiconductor optoelectronic devices. From bottom to top, it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A thermoelectric rectification layer is provided between the substrate and the lower confinement layer and between the lower confinement layer and the lower waveguide layer. The thermoelectric rectification layer causes a gradient in the overlap degree of the electron and phonon state densities injected perpendicular to it, resulting in phonon localization effects, enhancing phonon transport and heat dissipation performance, enabling the laser element to have a current ratio of more than 10<supgt;4< / supgt; and a thermal rectification ratio of more than 90%, enhancing the coupling rate from the pump energy level to the laser upper energy level, reducing laser energy loss, improving the temperature distribution and thermal stress uniformity of the laser element, reducing the temperature quenching and laser element fracture problems of the laser element, reducing the threshold current of the laser element and increasing the slope efficiency, and enhancing the reliability and lifespan of the laser element.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with a thermoelectric rectification layer. Background Art

[0002] Laser elements are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of laser elements, and the classification methods are also diverse. The main types include solid, gas, liquid, semiconductor, and dye laser elements. Compared with other types of laser elements, all-solid-state semiconductor laser elements have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between laser elements and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a smaller spectral full width at half maximum, very high brightness, and the output power of a single laser element can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of laser elements reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while the laser element is stimulated transition radiation, and the induced photon energy should be equal to the energy difference of the electron transition, generating identical coherent light of photons and induced photons; 4) The principles are different: The light-emitting diode undergoes radiative recombination and emits light when electrons and holes transition to quantum wells or p-n junctions under the action of an external voltage, while the laser element can only lasing when the lasing conditions are met. It must satisfy the condition of carrier population inversion distribution in the active region, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and when the threshold condition is met, the gain is greater than the loss, and finally, laser light is output. Nitride semiconductor laser elements have the following problems: 1) The large lattice mismatch and strain inside cause a strong polarization effect, and the strong QCSE (Quantum Confined Stark Effect) severely limits the improvement of the electrical lasing gain of laser elements; 2) The internal defect density is high and the crystal quality is not ideal; 3) The laser element has a large operating current, and the large current density generates a large amount of heat, and the heat dissipation of the device is poor, which will exacerbate the thermal mismatch between semiconductor epitaxial layers, leading to problems such as an increase in threshold current and a decrease in slope efficiency. Summary of the Invention

[0003] The purpose of the present invention is to provide a semiconductor laser element provided with a thermoelectric rectification layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device provided with a thermoelectric rectification layer, which sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. A thermoelectric rectification layer is provided between the substrate and the lower confinement layer and between the lower confinement layer and the lower waveguide layer.

[0005] As a preferred technical solution of the present invention, the thermoelectric rectification layer is any one or any combination of MoS2-MoO2, MoS2-MoN x , MoS2-MoSe2, MoS2-Mo2C, MoS2-MoP, MoSe2-WSe2, MoS-WS2.

[0006] As a preferred technical solution of the present invention, any combination of the thermoelectric rectification layer includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following binary combinations: MoS2-MoO2 / MoS2-MoN x , MoS2-MoO2 / MoS2-MoSe2, MoS2-MoO2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoP, MoS2-MoO2 / MoSe2-WSe2, MoS2-MoO2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2, MoS2-MoN x / MoS2-Mo2C, MoS2-MoN x / MoS2-MoP, MoS2-MoN x / MoSe2-WSe2, MoS2-MoN x / MoS-WS2, MoSe2-WSe2 / MoS2-Mo2C, MoSe2-WSe2 / MoS2-MoP, MoSe2-WSe2 / MoSe2-WSe2, MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP, MoS2-Mo2C / MoSe2-WSe2,MoS2-Mo2C / MoS-WS2, MoS2-MoP / MoSe2-WSe2, MoS2-MoP / MoS-WS2.

[0007] As a preferred technical solution of the present invention, any combination of the thermoelectric rectification layer includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following ternary combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS-WS2,MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2,MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoP / MoSe2-WSe2 / MoS-WS。

[0008] As a preferred technical solution of the present invention, any combination of the thermoelectric rectification layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of quaternary combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2,MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoSe2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2。

[0009] As a preferred technical solution of the present invention, any combination of the thermoelectric rectification layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2,MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2。

[0010] As a preferred technical solution of the present invention, a thermoelectric rectification layer is provided between the substrate and the lower confinement layer and between the lower confinement layer and the lower waveguide layer. The thermoelectric rectification layer creates a gradient in the overlap degree of the electron and phonon state densities injected perpendicularly thereto, causing phonon localization effects, enhancing phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of 4 more than 10 and a thermal rectification ratio of more than 90%, improving the coupling rate from the pump energy level to the laser upper energy level, reducing laser energy loss, enhancing the temperature distribution and thermal stress uniformity of the laser element, reducing the temperature quenching and laser element fracture problems of the laser element, reducing the threshold current of the laser element and increasing the slope efficiency, and enhancing the reliability and lifespan of the laser element.

[0011] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0012] Compared with the prior art, the beneficial effects of the present invention are:

[0013] In the solution of the present invention:

[0014] Compared with the prior art, a thermoelectric rectification layer is provided between the substrate and the lower confinement layer and between the lower confinement layer and the lower waveguide layer. The thermoelectric rectification layer creates a gradient in the overlap of the electron and phonon density of states injected perpendicular to it, causing phonon localization effects, enhancing phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of 4 more than 10 and a thermal rectification ratio of more than 90%. It improves the coupling rate from the pump energy level to the laser upper energy level, reduces laser energy loss, enhances the temperature distribution and thermal stress uniformity of the laser element, reduces the temperature quenching and laser element fracture problems of the laser element, reduces the threshold current of the laser element and increases the slope efficiency, and improves the reliability and lifespan of the laser element.

[0015] The slope efficiency of the green laser element is increased from 0.36 W / A to 0.8 W / A, a 129% increase; the threshold current density is reduced from 4.8 kA / cm 2 to 1.2 A / cm 2 , the optical power is increased from 0.6 W to 1.1 W, the optical power attenuation after 1000H aging is decreased from 32% to 9%, the temperature quenching ratio is decreased from 127 PPM to 16 PPM, a decrease of 87%; the laser element fracture ratio is decreased from 89 PPM to 7 PPM, a decrease of 92%.

[0016] BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. is a schematic structural diagram of a semiconductor laser element provided with a thermoelectric rectification layer according to the present invention.

[0018] Reference numerals in the figure:

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Thermoelectric rectification layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention.

[0021] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0022] It should be noted that, without conflict, the embodiments and the features and technical solutions in the embodiments of the present invention may be combined with each other.

[0023] Embodiment 1

[0024] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a thermoelectric rectification layer, which, from bottom to top, sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A thermoelectric rectification layer 107 is provided between the substrate 100 and the lower confinement layer 101 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0025] The thermoelectric rectification layer 107 is any one of MoS2-MoO2, MoS2-MoN x , MoS2-MoSe2, MoS2-Mo2C, MoS2-MoP, MoSe2-WSe2, and MoS-WS2.

[0026] The thermoelectric rectification layer 107 is above the upper confinement layer 106. The thermoelectric rectification layer makes the coincidence degree of the electron and phonon state densities injected perpendicularly to it produce a gradient, and the phonon generates a localization effect, improving the phonon transport and heat dissipation performance, so that the laser element has a current ratio of more than 10 4 and a thermal rectification ratio of more than 90%, reducing the threshold current of the laser element and improving the slope efficiency, and improving the reliability and life of the laser element.

[0027] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0028] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0029] Embodiment 2

[0030] Please refer toFigure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a thermoelectric rectification layer. The semiconductor laser element provided with a thermoelectric rectification layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A thermoelectric rectification layer 107 is provided between the substrate 100 and the lower confinement layer 101 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0031] The thermoelectric rectification layer 107 is above the upper confinement layer 106. The thermoelectric rectification layer causes a gradient in the coincidence degree of the electron and phonon state densities injected perpendicularly thereto, resulting in a phonon localization effect, improving phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of 10 4 or more and a thermal rectification ratio of 90% or more, reducing the threshold current of the laser element and increasing the slope efficiency, and improving the reliability and lifespan of the laser element.

[0032] Any combination of the thermoelectric rectification layers includes the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: MoS2-MoO2 / MoS2-MoN x , MoS2-MoO2 / MoS2-MoSe2, MoS2-MoO2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoP, MoS2-MoO2 / MoSe2-WSe2, MoS2-MoO2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2, MoS2-MoN x / MoS2-Mo2C, MoS2-MoN x / MoS2-MoP, MoS2-MoN x / MoSe2-WSe2, MoS2-MoN x / MoS-WS2, MoSe2-WSe2 / MoS2-Mo2C, MoSe2-WSe2 / MoS2-MoP, MoSe2-WSe2 / MoSe2-WSe2, MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP, MoS2-Mo2C / MoSe2-WSe2, MoS2-Mo2C / MoS-WS2, MoS2-MoP / MoSe2-WSe2, MoS2-MoP / MoS-WS2.

[0033] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0034] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0035] Example 3

[0036] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a thermoelectric rectification layer. A semiconductor laser element provided with a thermoelectric rectification layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A thermoelectric rectification layer 107 is provided between the substrate 100 and the lower confinement layer 101 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0037] The thermoelectric rectification layer 107 is above the upper confinement layer 106. The thermoelectric rectification layer causes a gradient in the overlap degree of the electron and phonon state densities injected perpendicular to it, resulting in a phonon localization effect, improving phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of more than 10 4 and a thermal rectification ratio of more than 90%, reducing the threshold current of the laser element and increasing the slope efficiency, and improving the reliability and lifespan of the laser element.

[0038] Any combination of the thermoelectric rectification layer 107 includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2,MoS2-MoN x / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoP / MoSe2-WSe2 / MoS-WS。

[0039] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0040] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0041] Example 4

[0042] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a thermoelectric rectification layer. The semiconductor laser element provided with a thermoelectric rectification layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A thermoelectric rectification layer 107 is provided between the substrate 100 and the lower confinement layer 101 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0043] The thermoelectric rectification layer 107 is above the upper confinement layer 106. The thermoelectric rectification layer causes a gradient in the coincidence degree of the electron and phonon state densities injected perpendicular to it, resulting in a phonon localization effect, improving phonon transport and heat dissipation performance, enabling the laser element to have a current ratio of more than 104 and a thermal rectification ratio of more than 90%, reducing the threshold current of the laser element and increasing the slope efficiency, and improving the reliability and lifespan of the laser element.

[0044] Any combination of the thermoelectric rectification layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of quaternary combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2,MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoSe2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2

[0045] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0046] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0047] Example 5

[0048] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a thermoelectric rectification layer. The semiconductor laser element provided with a thermoelectric rectification layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A thermoelectric rectification layer 107 is provided between the substrate 100 and the lower confinement layer 101 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0049] The thermoelectric rectification layer 107 is above the upper confinement layer 106. The thermoelectric rectification layer causes a gradient in the coincidence degree of the electron and phonon state densities injected perpendicular to it, resulting in a phonon localization effect, improving phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of more than 10 4 and a thermal rectification ratio of more than 90%, reducing the threshold current of the laser element and improving the slope efficiency, and enhancing the reliability and lifespan of the laser element.

[0050] Any combination of the thermoelectric rectification layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2。Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。

[0051] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0052] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0053] Compared with the prior art, a thermoelectric rectification layer is provided between the substrate and the lower confinement layer and between the lower confinement layer and the lower waveguide layer. The thermoelectric rectification layer causes a gradient in the overlap degree of the electron and phonon state densities injected perpendicular to it, resulting in a phonon localization effect, improving phonon transport and heat dissipation performance, and enabling the laser element to have a current ratio of 4 more than 10 and a thermal rectification ratio of more than 90%, improving the coupling rate from the pump energy level to the laser upper energy level, reducing laser energy loss, improving the temperature distribution and thermal stress uniformity of the laser element, reducing the temperature quenching and laser element fracture problems of the laser element, reducing the threshold current of the laser element and increasing the slope efficiency, and improving the reliability and lifespan of the laser element.

[0054] The slope efficiency of the green laser element is increased from 0.36 W / A to 0.8 W / A, an increase of 129%; the threshold current density is reduced from 4.8 kA / cm 2 to 1.2 A / cm 2 , the optical power is increased from 0.6 W to 1.1 W, the optical power decay after 1000H aging is decreased from 32% to 9%, the temperature quenching ratio is decreased from 127 PPM to 16 PPM, a decrease of 87%; the laser element fracture ratio is decreased from 89 PPM to 7 PPM, a decrease of 92%.

[0055]

[0056] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although the present specification has described the present invention in detail with reference to the above embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a thermoelectric rectification layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top, and is characterized in that: A thermoelectric rectification layer (107) is provided between the substrate (100) and the lower confinement layer (101) and between the lower confinement layer (101) and the lower waveguide layer (102).

2. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 1, characterized in that, The thermoelectric rectification layer (107) is any one or any combination of MoS2-MoO2, MoS2-MoN x , MoS2-MoSe2, MoS2-Mo2C, MoS2-MoP, MoSe2-WSe2, MoS-WS2.

3. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 2, characterized in that, Any combination of the thermoelectric rectification layer (107) includes heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of the following binary combinations: MoS2-MoO2 / MoS2-MoN x , MoS2-MoO2 / MoS2-MoSe2, MoS2-MoO2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoP, MoS2-MoO2 / MoSe2-WSe2, MoS2-MoO2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2, MoS2-MoN x / MoS2-Mo2C, MoS2-MoN x / MoS2-MoP, MoS2-MoN x / MoSe2-WSe2, MoS2-MoN x / MoS-WS2,MoSe2-WSe2 / MoS2-Mo2C, MoSe2-WSe2 / MoS2-MoP, MoSe2-WSe2 / MoSe2-WSe2, MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP, MoS2-Mo2C / MoSe2-WSe2, MoS2-Mo2C / MoS-WS2, MoS2-MoP / MoSe2-WSe2, MoS2-MoP / MoS-WS2。 4. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 2, characterized in that, Any combination of the thermoelectric rectification layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of ternary combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2,MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoP / MoSe2-WSe2 / MoS-WS。 5. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 2, characterized in that, Any combination of the thermoelectric rectifying layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of a quaternary combination: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2,MoS2-MoO2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoSe2 / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2。 6. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 2, characterized in that, Any combination of the thermoelectric rectifying layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of five-element, six-element, and seven-element combinations: MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoN x / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2,MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoS-WS2, MoS2-MoO2 / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2, MoS2-MoO2 / MoS2-MoN x / MoS2-MoSe2 / MoS2-Mo2C / MoS2-MoP / MoSe2-WSe2 / MoS-WS2。 7. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 1, characterized in that, The thermoelectric rectification layer (107) creates a gradient in the degree of overlap of the electron and phonon state densities injected perpendicular to it, causing a phonon localization effect, enhancing phonon transport and heat dissipation performance, enabling the laser element to have a current ratio of 4 more than 10 and a thermal rectification ratio of more than 90%, enhancing the coupling rate from the pump energy level to the laser upper energy level, reducing laser energy loss, improving the temperature distribution and thermal stress uniformity of the laser element, reducing the temperature quenching and laser element fracture problems of the laser element, reducing the threshold current of the laser element and increasing the slope efficiency, and enhancing the reliability and lifespan of the laser element.

8. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 1, characterized in that, The thickness of the thermoelectric rectification layer (107) is 5 to 500 nm.

9. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 1, characterized in that, The lower confinement layer (101), the lower waveguide layer (102), the active layer (103), the upper waveguide layer (104), the electron blocking layer (105), and the upper confinement layer (106) include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

10. The semiconductor laser device provided with a thermoelectric rectification layer according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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