High-voltage half-bridge driving circuit and integrated chip

Abstract

The application relates to the technical field of driving circuits, in particular to a high-voltage half-bridge driving circuit and an integrated chip, which circuit comprises a reference current source module, a high-voltage current type level shift module, a high-end driving module, a low-end driving module and a bootstrap diode, the reference current source module is connected to the high-voltage current type level shift module, the high-voltage current type level shift module is connected to the high-end driving module, the high-voltage current type level shift module is also connected to the low-end driving module, and the bootstrap diode is arranged between the high-end driving module and the low-end driving module. The application has the effect of being capable of improving the withstand voltage value of the half-bridge driving circuit, thereby meeting the use of a high-voltage battery system.

Description

Technical Field

[0001] This application relates to the technical field of drive circuits, and in particular to a high-voltage half-bridge drive circuit and integrated chip. Background Technology

[0002] With the development of power electronics technology, a half-bridge driver circuit has been designed to better drive MOSFETs. This half-bridge driver circuit is fabricated as a bipolar integrated circuit using bipolar technology. In related technologies, the half-bridge driver circuit fabricated using bipolar technology has a maximum withstand voltage of 40V, which is sufficient for applications including systems with 24V batteries.

[0003] However, in addition to systems that include 24V batteries, there are also systems that include 48V batteries. The half-bridge drive circuits with a maximum withstand voltage of 40V in the relevant technologies cannot meet the usage requirements. Therefore, there is an urgent need to invent a half-bridge drive circuit that can meet the requirements of systems that include high-voltage batteries. Summary of the Invention

[0004] In order to improve the withstand voltage of the half-bridge drive circuit and thus meet the requirements of high-voltage battery systems, this application provides a high-voltage half-bridge drive circuit and integrated chip.

[0005] Firstly, the high-voltage half-bridge drive circuit provided in this application adopts the following technical solution: A high-voltage half-bridge drive circuit includes a reference current source module, a high-voltage current-type level shifting module, a high-side drive module, a low-side drive module, and a bootstrap diode. The reference current source module is connected to the high-voltage current-type level shifting module, the high-voltage current-type level shifting module is connected to the high-side drive module, the reference current source module is also connected to the low-side drive module, and the bootstrap diode is disposed between the high-side drive module and the low-side drive module.

[0006] By adopting the above technical solution, the reference current source module outputs a constant current for the normal operation of subsequent circuits. During high-side driving, the high-voltage current-type level shifting module distributes the input voltage, thereby doubling the voltage that the circuit can withstand. This allows the high-voltage level shifting circuit to meet the requirement of a voltage withstand higher than 40V, compared to the 40V withstand voltage in related technologies. The high-side drive module and the low-side drive module are used to output control signals, correspondingly controlling the externally connected high-side MOSFET and low-side MOSFET.

[0007] Optionally, the reference current source module includes a PNP transistor Q14, an NPN transistor Q15, and a PNP transistor Q28. The base of the NPN transistor Q15 is connected to a Zener diode D4, and the anode of the Zener diode D4 is connected to ground. The base of the NPN transistor Q15 is also connected to a resistor R15, the other end of which is connected to the power supply terminal VCC. The emitter of the NPN transistor Q15 is connected to a resistor R14, the other end of which is connected to ground. The collector of the NPN transistor Q15 is connected to the... The collector of PNP transistor Q14 is connected to the power supply terminal VCC. The base of PNP transistor Q28 is connected to the collector of NPN transistor Q15. The collector of PNP transistor Q28 is connected to the ground terminal. The emitter of PNP transistor Q28 is connected to the power supply terminal VCC. The emitter of PNP transistor Q28 is also connected to the base of PNP transistor Q14. The base of PNP transistor Q14 is also used to connect the high-voltage current-type level shift module and the low-end drive module.

[0008] By adopting the above technical solution, the reference current source provides a constant current source. The placement of transistor Q28 prevents excessive current caused by too many mirrors of PNP transistor Q14, thus making the mirrored current source more accurate. Furthermore, the design is simple and less affected by temperature and input voltage.

[0009] Optionally, the high-voltage current-type level shifting module includes NPN transistors Q10, Q11, Q12, Q13, and Q16. The emitter of the PNP transistor Q13 is connected to the power supply terminal VCC, and the collector of the PNP transistor Q13 is connected to the collector of the NPN transistor Q12. The collector and base of the NPN transistor Q12 are shorted. The base of transistor Q13 is used to connect to the reference current source module. The base of PNP transistor Q13 is also used to connect to the low-side drive module. The emitter of NPN transistor Q12 is connected to resistor R12, and the other end of resistor R12 is connected to ground. The collector of NPN transistor Q12 is also connected to the collector of NPN transistor Q16. The base of NPN transistor Q16 is connected to resistor R19. The other end of R19 is connected to the first control terminal. The emitter of the NPN transistor Q16 is connected to the ground terminal. The base of the NPN transistor Q12 is connected to the base of the NPN transistor Q11. The emitter of the NPN transistor Q11 is connected to a resistor R11, the other end of which is connected to the ground terminal. The collector of the NPN transistor Q11 is connected to the emitter of the NPN transistor Q10. The collector of the NPN transistor Q10 is connected to a resistor R9, the other end of which is connected to the connection terminal VB. The collector of the NPN transistor Q10 is also used to connect to the high-side drive module. The base of the NPN transistor Q10 is connected to a resistor R1, the other end of which is connected to the connection terminal VB. The base of the NPN transistor Q10 is also connected to a resistor R10, the other end of which is connected to the ground terminal.

[0010] By adopting the above technical solution, PNP transistors Q13 and Q14 form a current mirror source, NPN transistors Q12 and Q11 form a current mirror source, and resistors R1 and R10 divide the voltage, so that the voltage between NPN transistors Q10 and Q11 will not exceed 40V, thereby achieving the purpose of the half-bridge drive circuit with a withstand voltage of 80V, which is an improvement over the withstand voltage of 40V in related technologies.

[0011] Optionally, the high-end drive module includes PNP transistors Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9, a diode D1, and a Zener diode D2. The base of PNP transistor Q1 is connected to a resistor R3, and the other end of resistor R3 is connected to a terminal VB. The collector of PNP transistor Q1 is connected to a terminal VS. The emitter of PNP transistor Q1 is connected to the emitter of PNP transistor Q2. The emitter of PNP transistor Q2 is also connected to a resistor R2, and the other end of resistor R2 is connected to... At the connection terminal VB, the base of the PNP transistor Q2 is connected to the high-voltage current-type level shifting module. A resistor R4 is connected to the collector of the PNP transistor Q2. The other end of resistor R4 is connected to a resistor R5. The other end of resistor R5 is connected to the connection terminal VS. A resistor R6 is connected to the connection point of resistors R4 and R5. The other end of resistor R6 is connected to the base of the NPN transistor Q3. A capacitor C1 is connected to the base of the NPN transistor Q3. The other end of capacitor C1 is connected to the connection terminal VS. The emitter of the NPN transistor Q3 is connected to the connection terminal VS. The collector of the NPN transistor Q3... A resistor R7 is connected, with its other end connected to the collector of the PNP transistor Q4. The collector and base of the PNP transistor Q4 are shorted. The emitter of the PNP transistor Q4 is connected to the connection terminal VB. The base of the PNP transistor Q4 is also connected to the base of the PNP transistor Q5. The emitter of the PNP transistor Q5 is connected to the connection terminal VB. The collector of the PNP transistor Q5 is connected to the collector of the NPN transistor Q9. The base of the NPN transistor Q9 is connected to the collector of the NPN transistor Q3. A resistor R8 is connected to the emitter of the NPN transistor Q9, with its other end connected to the connection terminal VS. The emitter of NPN transistor Q9 is also connected to the base of NPN transistor Q8. The emitter of NPN transistor Q8 is connected to the connection terminal VS. The collector of NPN transistor Q8 is connected to the connection terminal HO. The collector of NPN transistor Q8 is connected to the emitter of NPN transistor Q7. The emitter of NPN transistor Q7 is connected to the anode of diode D1. The cathode of diode D1 is connected to the collector of NPN transistor Q9. The base of NPN transistor Q7 is connected to resistor R18, the other end of which is connected to the anode of diode D1. The collector of NPN transistor Q7 is connected to the connection terminal VB.The base of NPN transistor Q7 is also connected to the emitter of NPN transistor Q6. The collector of NPN transistor Q6 is connected to the connection terminal VB. The base of NPN transistor Q6 is connected to the collector of PNP transistor Q5. The cathode of Zener diode D2 is connected to the collector of PNP transistor Q5, and the anode of Zener diode D2 is connected to the connection terminal VS.

[0012] By employing the above technical solution, resistors R4 and R6, along with capacitor C1, constitute a filter circuit that can filter out noise, thereby making the voltage signal transmission more accurate. Furthermore, by utilizing Zener diode D2, the output voltage at connection terminal HO can be clamped when the voltage difference between connection terminals VB and VS is too large, thus preventing the high-side MOSFET connected externally from being damaged.

[0013] Optionally, the low-end drive module includes NPN transistors Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, Q25, Q26, and Q27, a diode D6, and a Zener diode D5. The base of transistor Q27 is connected to a resistor R20, and the other end of resistor R20 is connected to a second control terminal. The emitter of NPN transistor Q27 is connected to ground, and the collector of NPN transistor Q27 is connected to the collector of PNP transistor Q26. The PNP transistor Q27... The emitter of transistor 6 is connected to the power supply terminal VCC. The base of PNP transistor Q26 is connected to the reference current source module. The base of PNP transistor Q25 is connected to the base of PNP transistor Q26. The emitter of PNP transistor Q25 is connected to the power supply terminal VCC. The collector of transistor Q25 is connected to the collector of NPN transistor Q24. The emitter of NPN transistor Q24 is connected to the ground terminal. The base and collector of NPN transistor Q24 are shorted. The base of NPN transistor Q24 is also connected to the base of NPN transistor Q23. The emitter of NPN transistor Q23 is connected to the ground terminal. The collector of NPN transistor Q23... The base of PNP transistor Q21 is connected to the collector of PNP transistor Q22, the emitter of PNP transistor Q22 is connected to the power supply terminal VCC, the base of PNP transistor Q22 is shorted to the collector of NPN transistor Q17, the base of NPN transistor Q17 is connected to the collector of NPN transistor Q27, and a resistor R16 is connected to the emitter of NPN transistor Q17. The other end of resistor R16 is connected to the ground terminal. The emitter of transistor 17 is also connected to the base of NPN transistor Q18. The emitter of NPN transistor Q18 is connected to ground. The collector of NPN transistor Q18 is connected to terminal LO. The collector of NPN transistor Q18 is connected to the emitter of NPN transistor Q19. The collector of NPN transistor Q19 is connected to the power supply terminal VCC. The base of NPN transistor Q19 is connected to the emitter of NPN transistor Q20. The base of NPN transistor Q20 is connected to the collector of PNP transistor Q21. The collector of transistor Q20 is connected to the power supply terminal VCC. Resistor 17 is connected to the emitter of NPN transistor Q20.The other end of resistor R17 is connected to the anode of diode D6. The anode of diode D6 is connected to the emitter of NPN transistor Q19. The cathode of diode D6 is connected to the collector of NPN transistor Q17. The anode of Zener diode D5 is connected to ground. The cathode of Zener diode D5 is connected to the collector of NPN transistor Q17.

[0014] By adopting the above technical solution, the voltage value can be clamped when the voltage of the power supply terminal VCC is too high, so that the output voltage of the connection terminal LO will not be too high, thereby preventing the low-side MOSFET connected externally from being broken down.

[0015] Optionally, the bootstrap diode includes a resistor R13 and a diode D3. One end of the resistor R13 is connected to the high-side drive module, the other end of the resistor R13 is connected to the cathode of the diode D3, and the anode of the diode D3 is connected to the low-side drive module.

[0016] Optionally, the resistor R13 is a power resistor, and the diode D3 is a fast diode.

[0017] Secondly, the high-voltage half-bridge driver integrated chip provided in this application adopts the following technical solution: A high-voltage half-bridge driver integrated chip includes a high-voltage half-bridge driver circuit as described in the first aspect.

[0018] In summary, this application includes at least one of the following beneficial technical effects: The reference current source module outputs a constant current for the normal operation of subsequent circuits. The high-voltage current-type level shifting module distributes the input voltage, thereby increasing the voltage that the circuit can withstand by up to 200V. This allows the high-voltage level shifting circuit to meet the requirement of a voltage withstand higher than 40V, compared to the 40V withstand voltage in related technologies. The high-side drive module and the low-side drive module are used to output control signals, corresponding to the control of the externally connected high-side MOSFETs and low-side MOSFETs. The reference current source provides a constant current source. The placement of transistor Q28 prevents excessive current from being generated by too many mirrors of PNP transistor Q14, thus making the mirrored current source more accurate. Furthermore, the design is simple and less affected by temperature and input voltage. Attached Figure Description

[0019] Figure 1 This is a schematic diagram illustrating a high-voltage half-bridge drive circuit in an embodiment of this application.

[0020] Explanation of reference numerals in the attached diagram: 1. Reference current source module; 2. High-voltage current type level shift module; 3. High-side drive module; 4. Low-side drive module; 5. Bootstrap diode. Implementation

[0021] The present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only for explaining the present application and are not intended to limit the present application.

[0022] This application discloses a high-voltage half-bridge drive circuit. (Refer to...) Figure 1 A high-voltage half-bridge drive circuit includes a reference current source module 1, a high-voltage current-type level shift module 2, a high-side drive module 3, a low-side drive module 4, and a bootstrap diode 5. The reference current source module 1 is connected to the high-voltage current-type level shift module 2, the high-voltage current-type level shift module 2 is connected to the high-side drive module 3, the reference current source module 1 is also connected to the low-side drive module 4, and the bootstrap diode 5 is disposed between the high-side drive module 3 and the low-side drive module 4.

[0023] The reference current source module 1 provides a reference current and outputs a constant current. The high-voltage current type level shift module 2 is used to solve the problem of insufficient NPN VCE withstand voltage in bipolar processes. The high-end drive module 3 and the low-end drive module 4 are used to output large current to quickly drive the power MOSFET.

[0024] The reference current source module 1 includes a PNP transistor Q14, an NPN transistor Q15, and a PNP transistor Q28. The base of the NPN transistor Q15 is connected to a Zener diode D4, and the anode of the Zener diode D4 is connected to ground. The base of the NPN transistor Q15 is also connected to a resistor R15, the other end of which is connected to the power supply terminal VCC. The emitter of the NPN transistor Q15 is connected to a resistor R14, the other end of which is connected to ground. The collector of the NPN transistor Q15 is connected to... The collector of PNP transistor Q14 is connected to the collector of PNP transistor Q15, the emitter of PNP transistor Q14 is connected to the power supply terminal VCC, the base of PNP transistor Q28 is connected to the collector of NPN transistor Q15, the collector of PNP transistor Q28 is connected to the ground terminal, the emitter of PNP transistor Q28 is connected to the power supply terminal VCC, the emitter of PNP transistor Q28 is also connected to the base of PNP transistor Q14, and the base of PNP transistor Q14 is also used to connect the high-voltage current type level shift module 2 and the low-end drive module 4.

[0025] The PNP transistor Q28 is used to prevent the base current from being too large due to too many mirrors of the PNP transistor Q14, thus making the mirror current source ratio more accurate. Furthermore, the internal circuit design of the reference current source module 1 is simple, less affected by temperature, and less affected by input voltage changes.

[0026] The constant current output by reference current source module 1: ; In this embodiment, the Zener diode D4 has a Zener voltage value. The voltage difference between the base and emitter of NPN transistor Q15 Therefore, the value of the constant current can be achieved by adjusting R14.

[0027] The high-voltage current-type level shifting module 2 includes NPN transistors Q10, Q11, Q12, Q13, and Q16. The emitter of PNP transistor Q13 is connected to the power supply terminal VCC. The collector of PNP transistor Q13 is connected to the collector of NPN transistor Q12. The collector and base of NPN transistor Q12 are shorted. The base of PNP transistor Q13 is used to connect to the base of PNP transistor Q14. The base of PNP transistor Q13 is also used to connect to the low-side drive module 4. A resistor R12 is connected to the emitter of NPN transistor Q12, and the other end of resistor R12 is connected to the ground terminal. The collector of NPN transistor Q12 is also connected to the collector of NPN transistor Q16. A resistor R1 is connected to the base of NPN transistor Q16. 9. The other end of resistor R19 is connected to the first control terminal. The emitter of NPN transistor Q16 is connected to the ground terminal. The base of NPN transistor Q12 is connected to the base of NPN transistor Q11. The emitter of NPN transistor Q11 is connected to resistor R11, and the other end of resistor R11 is connected to the ground terminal. The collector of NPN transistor Q11 is connected to the emitter of NPN transistor Q10. The collector of NPN transistor Q10 is connected to resistor R9, and the other end of resistor R9 is connected to the connection terminal VB. The collector of NPN transistor Q10 is also used to connect to the high-side drive module 3. The base of NPN transistor Q10 is connected to resistor R1, and the other end of resistor R1 is connected to the connection terminal VB. The base of NPN transistor Q10 is also connected to resistor R10, and the other end of resistor R10 is connected to the ground terminal.

[0028] In this embodiment, PNP transistors Q13 and Q14 form a mirror structure, thereby generating a mirror current. The current source at PNP transistor Q13 is set to 100μA. NPN transistors Q11 and Q12, resistors R11 and R12 form a mirror structure, and the mirror current ratio is 1:5.

[0029] For example, during operation, the current source output from NPN transistor Q11 is 500μA, the amplification factor of NPN transistors Q10 and Q11 is 100, and the base current of NPN transistor Q10 is 5μA; the resistance values ​​of resistors R1 and R2 are both 40kΩ. When the voltage at the connection terminal VB is 80V, the current through resistors R1 and R10 is 1mA, the base voltage of NPN transistor Q10 is 40V, and the voltage between the collector and emitter of both NPN transistors Q10 and Q11 is 40V.

[0030] As can be seen from the above examples, the high-voltage level displacement circuit solves the problem of insufficient withstand voltage of the NPN VCE in ordinary 40V bipolar process, thus realizing 80V withstand voltage drive.

[0031] In this embodiment, the resistance of resistor R9 is 5kΩ. When NPN transistor Q16 is turned off, NPN transistor Q11 starts to work in linear amplification mode. The voltage generated across resistor R9 is 2.5V, which is calculated by multiplying 500μA by 5kΩ.

[0032] The high-end driver module 3 includes PNP transistors Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9, diode D1, and Zener diode D2. The base of PNP transistor Q1 is connected to resistor R3, with the other end of R3 connected to terminal VB. The collector of PNP transistor Q1 is connected to terminal VS. The emitter of PNP transistor Q1 is connected to the emitter of PNP transistor Q2. The emitter of PNP transistor Q2 is also connected to resistor R2, with the other end of R2 connected to terminal VB. The base of PNP transistor Q2 is used for connection... The collector of NPN transistor Q10 and the collector of PNP transistor Q2 are connected to resistor R4. The other end of resistor R4 is connected to resistor R5, and the other end of resistor R5 is connected to terminal VS. Resistor R6 is connected to the junction of resistors R4 and R5. The other end of resistor R6 is connected to the base of NPN transistor Q3. Capacitor C1 is connected to the base of NPN transistor Q3, and the other end of capacitor C1 is connected to terminal VS. The emitter of NPN transistor Q3 is connected to terminal VS. Resistor R7 is connected to the collector of NPN transistor Q3, and the other end of resistor R7 is connected to the collector of PNP transistor Q4. The collector and base of PNP transistor Q4 are shorted. The emitter of transistor Q4 is connected to terminal VB. The base of PNP transistor Q4 is also connected to the base of PNP transistor Q5. The emitter of transistor Q5 is connected to terminal VB. The collector of PNP transistor Q5 is connected to the collector of NPN transistor Q9. The base of NPN transistor Q9 is connected to the collector of NPN transistor Q3. Resistor R8 is connected to the emitter of NPN transistor Q9, and the other end of resistor R8 is connected to terminal VS. The emitter of NPN transistor Q9 is also connected to the base of NPN transistor Q8. The emitter of NPN transistor Q8 is connected to terminal VS. The collector of NPN transistor Q8 is connected to terminal HO. The collector of NPN transistor Q8 is connected to the NPN transistor... The emitter of NPN transistor Q7 is connected to the anode of diode D1. The cathode of diode D1 is connected to the collector of NPN transistor Q9. Resistor R18 is connected to the base of NPN transistor Q7, and the other end of resistor R18 is connected to the anode of diode D1. The collector of NPN transistor Q7 is connected to terminal VB. The base of NPN transistor Q7 is also connected to the emitter of NPN transistor Q6. The collector of NPN transistor Q6 is connected to terminal VB. The base of NPN transistor Q6 is connected to the collector of PNP transistor Q5. The cathode of Zener diode D2 is connected to the collector of PNP transistor Q5, and the anode of Zener diode D2 is connected to terminal VS.

[0033] When the high-end driver module 3 is turned on, the voltage across resistor R9 is 2.5V, and PNP transistor Q2 is in the conducting state with a conduction current of [missing value]. R2 is the resistance value of resistor R2. After PNP transistor Q2 turns on, NPN transistor Q3 turns on, and the collector-emitter voltage difference of NPN transistor Q3 is 0.3V. At this time, NPN transistor Q9 turns off. PNP transistors Q4 and Q5 form a 1:5 mirror circuit, and the output starts to work, that is, the output current source; thus, the Darlington transistor formed by NPN transistors Q6 and Q7 turns on, and HO outputs a large current, which can quickly turn on the externally connected high-side NMOS transistor. When the voltage difference between the connection terminal VB and the connection terminal VS is greater than or equal to 20V, the Zener diode D2 will clamp the output of the connection terminal HO to ensure that the voltage difference between the connection terminal HO and the connection terminal VS does not exceed 18V, thereby preventing the gate and source of the externally connected high-side NMOS transistor from being broken down.

[0034] When the high-side drive module 3 is off, the voltage across resistor R9 is 0V, PNP transistor Q2 is off, and NPN transistor Q3 is also off. Terminal VB provides current to the base of NPN transistor Q9 through PNP transistor Q4 and resistor R7. NPN transistor Q9, diode D1, and NPN transistor Q8 are turned on. NPN transistor Q9, through diode D1, turns off NPN transistors Q6 and Q7. Furthermore, after two stages of amplification by NPN transistors Q9 and Q8, the base current of NPN transistor Q9 only needs to be 500μA to achieve a maximum output sink current of 1.5A, thus quickly shutting down the externally connected high-side NMOS transistor.

[0035] Among them, resistors R4 and R6 and capacitor C1 constitute a filter circuit, which is used to filter out noise and reduce interference.

[0036] The low-end driver module 4 includes NPN transistors Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, Q25, Q26, and Q27, a diode D6, and a Zener diode D5. The base of transistor Q27 is connected to a resistor R20, the other end of which is connected to a second control terminal. The emitter of NPN transistor Q27 is connected to ground. The collector of NPN transistor Q27 is connected to the collector of PNP transistor Q26. The emitter of PNP transistor Q26 is connected to the power supply terminal VCC. The base of NP transistor Q26 is connected to the base of PNP transistor Q14. The base of PNP transistor Q25 is connected to the base of PNP transistor Q26. The emitter of PNP transistor Q25 is connected to the power supply terminal VCC. The collector of transistor Q25 is connected to the collector of NPN transistor Q24. The emitter of NPN transistor Q24 is connected to ground. The base and collector of NPN transistor Q24 are shorted. The base of NPN transistor Q24 is also connected to the base of NPN transistor Q23. The emitter of NPN transistor Q23 is connected to ground. The collector of NPN transistor Q23 is connected to the collector of PNP transistor Q22. The emitter of PNP transistor Q22 is connected to the power supply terminal VC. C. The base and collector of PNP transistor Q22 are shorted. The base of PNP transistor Q22 is connected to the base of PNP transistor Q21. The emitter of PNP transistor Q21 is connected to the power supply terminal VCC. The collector of PNP transistor Q21 is connected to the collector of NPN transistor Q17. The base of NPN transistor Q17 is connected to the collector of NPN transistor Q27. Resistor R16 is connected to the emitter of NPN transistor Q17, and the other end of resistor R26 is connected to the ground terminal. The emitter of NPN transistor Q17 is also connected to the base of NPN transistor Q18. The emitter of NPN transistor Q18 is connected to the ground terminal. The collector of NPN transistor Q18 is connected to the connection terminal LO. The collector of NPN transistor Q18 is connected to the emitter of NPN transistor Q19. The collector of NPN transistor Q19 is connected to the power supply terminal VCC. The base of NPN transistor Q19 is connected to the emitter of NPN transistor Q20. The base of NPN transistor Q20 is connected to the collector of PNP transistor Q21. The collector of transistor Q20 is connected to the power supply terminal VCC. Resistor R17 is connected to the emitter of NPN transistor Q20. The other end of resistor R17 is connected to the anode of diode D6. The anode of diode D6 is connected to the emitter of NPN transistor Q19. The cathode of diode D6 is connected to the collector of NPN transistor Q17. The anode of Zener diode D5 is connected to ground.The cathode of the Zener diode is connected to the collector of the NPN transistor Q17.

[0037] Among them, PNP transistors Q25 and Q26, along with PNP transistors Q13 and Q14, form a current mirror source and are continuously in amplification mode. NPN transistors Q23 and Q24 form a current mirror source with a 1:2 ratio and are continuously in amplification mode. PNP transistors Q21 and Q22 form a current mirror source with a 1:5 ratio, and PNP transistor Q22 is continuously in amplification mode. When the LO terminal outputs a high level, PNP transistor Q21 operates in saturation, with a voltage difference of 0.3V between its emitter and collector; when the LO terminal outputs a low level, PNP transistor Q21 operates in linear amplification mode.

[0038] In this embodiment, the output current of PNP transistor Q21 is designed to be 500μA. When the low-side drive module 4 is turned on, NPN transistor Q27 is turned on. The voltage difference between the emitter and collector of NPN transistor Q27 is 0.3V. At this time, transistor Q17 is turned off, and the current output by PNP transistor Q21 flows to the base of NPN transistor Q20, thereby turning on the Darlington transistor composed of NPN transistors Q19 and Q20. The LO output has a large current, which can quickly turn on the externally connected low-side NMOS transistor. When the power supply terminal VCC voltage is greater than or equal to 20V, the Zener diode D5 clamps the voltage at 18V, so that the maximum voltage output by the connection terminal LO will not exceed 18V, which can prevent the gate and source of the low-side NMOS transistor from being broken down.

[0039] When the low-side drive module 4 is turned off, NPN transistor Q27 is turned off, and PNP transistor Q26 is turned on, allowing current to flow through the base of NPN transistor Q17, turning on NPN transistor Q17. This, in turn, turns on diode D6 and NPN transistor Q18. NPN transistor Q17, through diode D6, quickly turns off NPN transistors Q19 and Q20. The output current of PNP transistor Q26 is 500μA. After being amplified by two stages of NPN transistors Q17 and Q18, the maximum sink current of 1.5A can be achieved at the connection terminal LO, thus quickly turning off the externally connected low-side NMOS transistor.

[0040] The bootstrap diode 5 includes a diode D3 and a resistor R13. One end of the resistor R13 is connected to the connection terminal VB, and the other end of the resistor R13 is connected to the cathode of the diode D3. The anode of the diode D3 is connected to the power supply terminal VCC.

[0041] In this circuit, diode D3 is a fast diode, and resistor R13 is a power resistor.

[0042] In this embodiment, resistor R13 is 50Ω, thus ensuring that when the power supply terminal VCC is 40V, the maximum instantaneous current of bootstrap diode 5 will not exceed 1A. The formula for calculating the maximum instantaneous current of diode D3 is as follows: Where VCC is the voltage value of the power supply terminal VCC, and R13 is the resistance value of resistor R13.

[0043] Furthermore, all the aforementioned modules, along with bootstrap diode 5, are manufactured using a low-cost bipolar process. High-voltage current-type level shifting module 2 addresses the issue of insufficient voltage withstand capability, thereby increasing the voltage withstand value of the half-bridge drive circuit. The filter circuit in high-side drive module 3 eliminates interference, thus maintaining normal logic output of high-side drive module 3 even when VS changes rapidly at the connection point.

[0044] The half-bridge drive circuit disclosed in this embodiment can integrate a bootstrap diode, eliminating the need for an external bootstrap diode and reducing usage costs.

[0045] In this embodiment, a clamping voltage function is designed at the output position, which enables the power MOSFET to be driven normally when the power supply VCC is not higher than 40V.

[0046] The design of the high-voltage current-type level shifting module improves the reliability of the circuit. Even if there is strong external interference, there will be no situation where the high-end input is already at a low level but the high-end output still maintains a high level output.

[0047] This application also discloses a high-voltage half-bridge driver integrated chip, which includes the high-voltage half-bridge driver circuit disclosed in the above embodiments. This chip integrates a bootstrap diode, which can reduce the chip's cost. Furthermore, a high-voltage current-type level shifting module is designed, which can improve the chip's withstand voltage.

[0048] The above are all preferred embodiments of this application and are not intended to limit the scope of protection of this application. Any feature disclosed in this specification (including the abstract and drawings) may be replaced by other equivalent or similar features unless specifically stated otherwise. That is, unless specifically stated otherwise, each feature is only one example of a series of equivalent or similar features.

Claims

1. A high-voltage half-bridge drive circuit, characterized in that: The system includes a reference current source module (1), a high-voltage current-type level shift module (2), a high-side drive module (3), a low-side drive module (4), and a bootstrap diode (5). The reference current source module (1) is connected to the high-voltage current-type level shift module (2), the high-voltage current-type level shift module (2) is connected to the high-side drive module (3), the reference current source module (1) is also connected to the low-side drive module (4), and the bootstrap diode (5) is disposed between the high-side drive module (3) and the low-side drive module (4). The reference current source module (1) includes a PNP transistor Q14, an NPN transistor Q15, and a PNP transistor Q28. The base of the NPN transistor Q15 is connected to a Zener diode D4, and the anode of the Zener diode D4 is connected to ground. The base of the NPN transistor Q15 is also connected to a resistor R15, the other end of which is connected to the power supply terminal VCC. The emitter of the NPN transistor Q15 is connected to a resistor R14, the other end of which is connected to ground. The collector of the NPN transistor Q15 is connected to the PNP transistor Q28. The collector of P-type transistor Q14 is connected to the power supply terminal VCC. The base of P-type transistor Q28 is connected to the collector of NPN transistor Q15. The collector of P-type transistor Q28 is connected to the ground terminal. The emitter of P-type transistor Q28 is connected to the power supply terminal VCC. The emitter of P-type transistor Q28 is also connected to the base of P-type transistor Q14. The base of P-type transistor Q14 is also used to connect the high-voltage current-type level shift module (2) and the low-end drive module (4). The high-voltage current-type level shift module (2) includes NPN transistors Q10, Q11, Q12, Q13, and Q16. The emitter of the PNP transistor Q13 is connected to the power supply terminal VCC. The collector of the PNP transistor Q13 is connected to the collector of the NPN transistor Q12. The collector of the NPN transistor Q12 is shorted to its base. The base of transistor Q13 is used to connect to the reference current source module (1). The base of transistor Q13 is also used to connect to the low-side drive module (4). The emitter of transistor Q12 is connected to resistor R12, and the other end of resistor R12 is connected to ground. The collector of transistor Q12 is also connected to the collector of transistor Q16. The base of transistor Q16 is connected to resistor R19. The other end of resistor R19 is connected to the first control terminal. The emitter of NPN transistor Q16 is connected to the ground terminal. The base of NPN transistor Q12 is connected to the base of NPN transistor Q11. The emitter of NPN transistor Q11 is connected to resistor R11. The other end of resistor R11 is connected to the ground terminal. The collector of NPN transistor Q11 is connected to the emitter of NPN transistor Q10. The collector of NPN transistor Q10 is connected to resistor R9. The other end of resistor R9 is connected to the connection terminal VB. The collector of NPN transistor Q10 is also used to connect to the high-side drive module (3). The base of NPN transistor Q10 is connected to resistor R1. The other end of resistor R1 is connected to the connection terminal VB. The base of NPN transistor Q10 is also connected to resistor R10. The other end of resistor R10 is connected to the ground terminal.

2. The high-voltage half-bridge drive circuit according to claim 1, characterized in that: The high-end drive module (3) includes PNP transistors Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, and Q9, a diode D1, and a Zener diode D2. The base of PNP transistor Q1 is connected to a resistor R3, and the other end of resistor R3 is connected to a connection terminal VB. The collector of PNP transistor Q1 is connected to a connection terminal VS. The emitter of PNP transistor Q1 is connected to the emitter of PNP transistor Q2. The emitter of PNP transistor Q2 is also connected to a resistor R2, and the other end of resistor R2 is connected to the Zener diode D2. The base of the PNP transistor Q2 is connected to the high-voltage current-type level shift module (2) via the connection terminal VB. A resistor R4 is connected to the collector of the PNP transistor Q2. A resistor R5 is connected to the other end of the resistor R4. The other end of the resistor R5 is connected to the connection terminal VS. A resistor R6 is connected to the connection point of the resistors R4 and R5. The other end of the resistor R6 is connected to the base of the NPN transistor Q3. A capacitor C1 is connected to the base of the NPN transistor Q3. The other end of the capacitor C1 is connected to the connection terminal VS. The emitter of the NPN transistor Q3 is connected to the connection terminal VS. The collector of the NPN transistor Q3... A resistor R7 is electrically connected, with the other end of R7 connected to the collector of the PNP transistor Q4. The collector and base of the PNP transistor Q4 are shorted. The emitter of the PNP transistor Q4 is connected to the connection terminal VB. The base of the PNP transistor Q4 is also connected to the base of the PNP transistor Q5. The emitter of the PNP transistor Q5 is connected to the connection terminal VB. The collector of the PNP transistor Q5 is connected to the collector of the NPN transistor Q9. The base of the NPN transistor Q9 is connected to the collector of the NPN transistor Q3. A resistor R8 is connected to the emitter of the NPN transistor Q9, with the other end of R8 connected to the connection terminal VS. The emitter of NPN transistor Q9 is also connected to the base of NPN transistor Q8. The emitter of NPN transistor Q8 is connected to the connection terminal VS. The collector of NPN transistor Q8 is connected to the connection terminal HO. The collector of NPN transistor Q8 is connected to the emitter of NPN transistor Q7. The emitter of NPN transistor Q7 is connected to the anode of diode D1. The cathode of diode D1 is connected to the collector of NPN transistor Q9. The base of NPN transistor Q7 is connected to resistor R18, the other end of which is connected to the anode of diode D1. The collector of NPN transistor Q7 is connected to the connection terminal VB.The base of NPN transistor Q7 is also connected to the emitter of NPN transistor Q6. The collector of NPN transistor Q6 is connected to the connection terminal VB. The base of NPN transistor Q6 is connected to the collector of PNP transistor Q5. The cathode of Zener diode D2 is connected to the collector of PNP transistor Q5, and the anode of Zener diode D2 is connected to the connection terminal VS.

3. The high-voltage half-bridge drive circuit according to claim 1, characterized in that: The low-end driving module (4) includes NPN transistors Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, Q25, Q26, and Q27, a diode D6, and a Zener diode D5. The base of transistor Q27 is connected to a resistor R20, and the other end of resistor R20 is connected to a second control terminal. The emitter of NPN transistor Q27 is connected to ground, and the collector of NPN transistor Q27 is connected to the collector of PNP transistor Q26. The PNP transistor Q26... The emitter of the PNP transistor Q26 is connected to the power supply terminal VCC. The base of the PNP transistor Q26 is connected to the reference current source module (1). The base of the PNP transistor Q25 is connected to the base of the PNP transistor Q26. The emitter of the PNP transistor Q25 is connected to the power supply terminal VCC. The collector of the PNP transistor Q25 is connected to the collector of the NPN transistor Q24. The emitter of the NPN transistor Q24 is connected to the ground terminal. The base and collector of the NPN transistor Q24 are shorted. The base of the NPN transistor Q24 is also connected to the base of the NPN transistor Q23. The emitter of the NPN transistor Q23 is connected to the ground terminal. The collector of the NPN transistor Q23... The base of PNP transistor Q21 is connected to the collector of PNP transistor Q22, the emitter of PNP transistor Q22 is connected to the power supply terminal VCC, the base of PNP transistor Q22 is shorted to the collector of NPN transistor Q17, the base of NPN transistor Q17 is connected to the collector of NPN transistor Q27, and a resistor R16 is connected to the emitter of NPN transistor Q17. The other end of resistor R16 is connected to the ground terminal. The emitter of transistor Q17 is also connected to the base of NPN transistor Q18. The emitter of NPN transistor Q18 is connected to ground. The collector of NPN transistor Q18 is connected to terminal LO. The collector of NPN transistor Q18 is connected to the emitter of NPN transistor Q19. The collector of NPN transistor Q19 is connected to the power supply terminal VCC. The base of NPN transistor Q19 is connected to the emitter of NPN transistor Q20. The base of NPN transistor Q20 is connected to the collector of PNP transistor Q21. The collector of transistor Q20 is connected to the power supply terminal VCC. Resistor R17 is connected to the emitter of NPN transistor Q20.The other end of resistor R17 is connected to the anode of diode D6. The anode of diode D6 is connected to the emitter of NPN transistor Q19. The cathode of diode D6 is connected to the collector of NPN transistor Q17. The anode of Zener diode D5 is connected to ground. The cathode of Zener diode D5 is connected to the collector of NPN transistor Q17.

4. The high-voltage half-bridge drive circuit according to claim 1, characterized in that: The bootstrap diode (5) includes a resistor R13 and a diode D3. One end of the resistor R13 is connected to the high-end drive module (3), the other end of the resistor R13 is connected to the cathode of the diode D3, and the anode of the diode D3 is connected to the low-end drive module (4).

5. A high-voltage half-bridge drive circuit according to claim 4, characterized in that: The resistor R13 is a power resistor, and the diode D3 is a fast diode.

6. A high-voltage half-bridge driver integrated chip, characterized in that: Includes a high-voltage half-bridge drive circuit as described in any one of claims 1 to 5.

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