A plasma-enhanced thin film deposition device

Abstract

The present invention relates to a plasma-enhanced thin film deposition apparatus, comprising a cavity, a carrier, a spraying head, an annular isolation unit, and a radio frequency coil. The cavity includes an accommodation space, and the carrier is located in the accommodation space and has a bearing surface, and at least one substrate is carried through the bearing surface. The spraying head is fluidly connected to the accommodation space, and the gas outlet of the spraying head faces the bearing surface. The annular isolation unit includes a setting space. The carrier, the spraying head, and the annular isolation unit define a reaction space in the accommodation space. The setting space and the accommodation space are independent of each other. The spraying head is used to supply a precursor to the reaction space. The radio frequency coil is disposed in the setting space and is coupled to a radio frequency power supply to perform a plasma-enhanced thin film deposition process on the substrate.

Description

Technical Field

[0001] The present invention relates to a plasma-enhanced thin film deposition apparatus, and more particularly to a plasma-enhanced atomic layer deposition apparatus, which defines a reaction space by a ring-shaped isolation unit provided with a radio frequency coil, a showerhead, and a carrier, and makes the radio frequency coil and the reaction space independent of each other. Background Art

[0002] Plasma-enhanced atomic layer deposition (PEALD) is a commonly used thin film deposition apparatus and is widely used in processes such as integrated circuits, light emitting diodes, and displays. Since it is necessary to achieve effects such as improving the reaction rate at a relatively low temperature below the precursor cracking temperature and / or the wafer damage temperature, plasma is often used to promote the deposition rate and / or uniformity of the thin film.

[0003] In order to reduce the damage caused by the direct contact between the wafer and the plasma, another type of plasma reactor has been developed. This type of design is called remote plasma. However, in the case of using remote plasma, especially when the remote plasma usually has to pass through the high aspect ratio gas outlet of the showerhead (that is, the gas outlet of the showerhead is quite narrow), the problem of attenuation of the remote plasma in the reaction space after passing through the gas outlet is often encountered, so that the effect of remote plasma-assisted deposition is greatly affected. Summary of the Invention

[0004] As described in the background art, the remote plasma used in the conventional plasma-enhanced thin film deposition apparatus often causes attenuation of the remote plasma after passing through the high aspect ratio gas outlet of the showerhead, thereby affecting the process effect. Therefore, the present invention proposes a novel plasma-enhanced thin film deposition apparatus, which defines a reaction space through a ring-shaped isolation unit, a showerhead, and a carrier. The ring-shaped isolation unit is used to set a radio frequency coil, so that the radio frequency coil and the reaction space are independent of each other, to generate and / or enhance plasma in the reaction space, thereby improving the process effect.

[0005] An object of the present invention is to provide a plasma-enhanced thin film deposition apparatus, including a chamber, a carrier, a showerhead, a ring-shaped isolation unit, and a radio frequency coil. The carrier, the showerhead, and the ring-shaped isolation unit define a reaction space in the accommodation space. The setting space for setting the radio frequency coil and the accommodation space for placing the wafer are independent of each other. The showerhead is used to provide at least one precursor to the reaction space. The radio frequency coil is disposed in the setting space of the ring-shaped isolation unit, and the radio frequency coil is coupled to a radio frequency power supply. Therefore, the independent setting space and accommodation space can avoid mutual contamination between the radio frequency coil and the reaction space.

[0006] In actual application, the cavity includes an accommodation space. The carrier is located in the accommodation space and has a bearing surface, and at least one substrate is carried through the bearing surface. The spray head is fluidly connected to the accommodation space and has a plurality of air outlets facing the bearing surface of the carrier. The plasma-enhanced thin film deposition device includes at least one intake pipeline passing through the cover plate or the cavity, and a gas is transported to the installation space of the annular isolation unit through the intake pipeline. The gas conditions in the installation space of the annular isolation unit can be changed according to the process requirements. The annular isolation unit has an opening, and the installation space is fluidly connected to the atmosphere outside the installation space through the opening.

[0007] The annular isolation unit is an integrally formed ceramic ring, a metal oxide ring or a metal nitride ring.

[0008] The beneficial effect of the present invention is that through the independent installation space and the accommodation space, the present invention can provide a plasma-enhanced thin film deposition device without gaps, thereby better avoiding mutual contamination between the radio frequency coil and the reaction space. Description of the Drawings

[0009] Figure 1 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the first embodiment of the present invention.

[0010] Figure 2 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the second embodiment of the present invention.

[0011] Figure 3 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the third embodiment of the present invention.

[0012] Figure 4 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the fourth embodiment of the present invention.

[0013] Figure 5 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the fifth embodiment of the present invention.

[0014] Figure 6 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the sixth embodiment of the present invention.

[0015] Figure 7 It is a cross-sectional schematic diagram of the plasma-enhanced thin film deposition device according to the seventh embodiment of the present invention.

[0016] Figure 8 It is a cross-sectional schematic diagram of an implementation form of the plasma-enhanced thin film deposition device according to the eighth embodiment of the present invention.

[0017] Figure 9 It is a three-dimensional schematic diagram of the setting structure of the radio frequency coil and the annular isolation unit of the present invention.

[0018] Figure 10 This is a top view of the structure of the radio frequency coil and the annular isolation unit of the present invention.

[0019] Description of reference numerals: 1 - Plasma enhanced chemical vapor deposition equipment; 10 - Chamber; 100 - Accommodation space; 101 - Body; 1010 - Carrying part; 1011 - Chamber opening; 102 - Cover plate; 11 - Carrier; 110 - Carrying surface; 12 - Showerhead; 121 - Gas outlet; 1210 - Gas outlet position; 122 - Input pipeline; 13 - Annular isolation unit; 130 - Opening; 131 - Inner wall; 132 - Outer wall; 133 - Bottom surface; 1331 - Groove; 134 - Sealing cover; 135 - Fixing member; 1351 - Recess; 14 - Radio frequency coil; 15 - Radio frequency power supply; 16 - Power meter; 17 - Matching device; 18 - Optical emission spectroscopy port; 19 - Inlet pipeline; 2 - Substrate; 20 - Chamber; 200 - Accommodation space; 201 - Body; 2011 - Chamber opening; 23 - Annular isolation unit; 230 - Opening; 231 - Inner wall; 233 - Bottom surface; H - Horizontal plane; R - Reaction space; S - Setting space. Detailed implementation manners

[0020] Please refer to Figure 1 , which is a schematic cross-sectional view of the plasma enhanced chemical vapor deposition equipment 1 of the first embodiment of the present invention. As Figure 1 shown, the plasma enhanced chemical vapor deposition equipment 1 includes a chamber 10, a carrier 11, a showerhead 12, an annular isolation unit 13, and a radio frequency coil 14.

[0021] The chamber 10 includes an accommodation space 100. The carrier 11 is located in the accommodation space 100 and has a carrying surface 110, and at least one substrate 2 is carried through the carrying surface 110. The showerhead 12 is fluidly connected to the accommodation space 100. The showerhead 12 has a plurality of gas outlets 121, and the gas outlets 121 face the carrying surface 110 of the carrier 11. The annular isolation unit 13 includes a setting space S. In particular, the carrier 11, the showerhead 12, and the annular isolation unit 13 define a reaction space R in the accommodation space 100. The setting space S and the accommodation space 100 are independent of each other. The showerhead 12 is used to provide at least one precursor to the reaction space R. The radio frequency coil 14 is disposed in the setting space S of the annular isolation unit 13, and the radio frequency coil 14 is coupled to a radio frequency power supply 15.

[0022] Specifically, the spray head 12 is located above the reaction space R, the carrier 11 is located below the reaction space R, and the annular isolation unit 13 surrounds the outside of the reaction space R. The RF coil 14 coupled to the RF power supply 15 increases the collision frequency of ions and electrons in the plasma to achieve the purpose of increasing the ions in the plasma, thereby promoting a gaseous fluid flowing out of the gas outlet 121 of the spray head 12 to become a plasma state and / or maintaining the stability of the plasma, so as to assist the reaction of the precursor on the substrate 2 on the carrier surface 110, and further form a thin film at the atomic level. In other embodiments, the gaseous fluid may be a purge gas.

[0023] In a feasible embodiment, the setting space S and the accommodating space 100 are separated by the annular isolation unit 13 and are independent of each other. Further, the annular isolation unit 13 is a ceramic ring, a metal oxide ring or a metal nitride ring. Furthermore, the annular isolation unit 13 is an integrally formed ceramic ring, a metal oxide ring or a metal nitride ring. For example, the material of the metal oxide ring is alumina, and the material of the metal nitride ring is aluminum nitride.

[0024] Generally, the reaction space R is a columnar space. Feasibly, the setting position of the RF coil 14 is on the horizontal plane at any position on the side of the reaction space R. Further, the setting position of the RF coil 14 is aligned with the upper edge of the reaction space R, that is, corresponding to the gas outlet position 1210 of the gas outlet 121.

[0025] For example, the substrate 2 is a wafer, and at least an electrode member (such as an electrode disk), an insulating member (an insulating disk) and / or a heater are sequentially stacked under or below the carrier surface 110 of the carrier 11, and the electrode member is coupled to a DC power supply or an RF power supply. In addition to providing at least one precursor to the reaction space R, the spray head 12 further provides an air, a purge gas and / or a plasma gas, etc. And at least a power meter 16 and a matching box 17 are sequentially coupled between the RF power supply 15 and the RF coil 14.

[0026] In a feasible embodiment, the cavity 10 includes a main body 101 and a cover plate 102. The main body 101 has a bearing portion 1010 and a cavity opening 1011. The cavity opening 1011 communicates with the accommodating space 100. The bearing portion 1010 protrudes from or recesses into the main body 101 and is used to bear the annular isolation unit 13. The cover plate 102 covers the cavity opening 1011 of the main body 101 and forms the accommodating space 100 between the main body 101 and the cover plate 102. Further, the annular isolation unit 13 includes: an inner wall 131, an outer wall 132 and a bottom surface 133. The inner wall 131 is disposed around the outside of the reaction space R. The outer wall 132 is disposed around the outside of the inner wall 131. One end of the cover plate 102 of the cavity 10 is connected to the inner wall 131 and the outer wall 132. The bottom surface 133 is connected to the other ends of the inner wall 131 and the outer wall 132 and is disposed on the bearing portion 1010 of the main body 101. A setting space S is formed between the cover plate 102, the inner wall 131, the outer wall 132 and the bottom surface 133. By connecting one end of the cover plate 102 to the inner wall 131 and the outer wall 132 and connecting the bottom surface 133 to the other ends of the inner wall 131 and the outer wall 132, the plasma enhanced thin film deposition apparatus 1 of the present invention (the annular isolation unit 13 is completely separated from the accommodating space 100 and is independent of each other) can better avoid the problem that sediments are generated due to gaps between the annular isolation unit 13 and the accommodating space 100, and further cause an arc during the process. Obviously, when the annular isolation unit 13 is selected as an integrally formed ceramic ring, a metal oxide ring or a metal nitride ring, the surface of the integrally formed annular isolation unit 13 can completely avoid the gaps caused by the component combination of the annular isolation unit 13, and avoid the problem that sediments are generated in the gaps and further cause an arc during the process. The sediments on the surface of the integrally formed annular isolation unit 13 can also be easily removed during the cleaning stage.

[0027] Specifically, the cover plate 102 may have other openings for setting pipelines, devices, etc. that communicate with the accommodating space 100 from the outside, such as a shower head 12, a gas pipeline, a sensor, etc. Or the shower head 12 further extends into the accommodating space 100 so that the input pipeline 122 of the shower head 12 is inserted into other openings. The main body 101 may also have other openings for setting pipelines, devices, etc. that communicate with the accommodating space 100 from the outside, such as a gas pipeline, a sensor, an optical emission spectroscopy port, etc. The optical emission spectroscopy port 18 is disposed on the main body 101 corresponding to the side of the substrate 2. The cover plate 102 is directly connected to and / or pressed against one end of the inner wall 131 and the outer wall 132. Further, a sealing member, such as an O-ring, is disposed at one end of the inner wall 131 and the outer wall 132 or the cover plate 102 so that one end of the inner wall 131 and the outer wall 132 and the cover plate 102 press the sealing member therein.

[0028] Specifically, as Figure 1 shown, the body 101 has a certain thickness. The carrying part 1010 is provided with an annular recess on the body 101 to form the carrying part 1010 for carrying the annular isolation unit 13, where the carrying part 1010 entirely or partially carries the bottom surface 133 of the annular isolation unit 13. Further, the cover plate 102 of the cavity 10 is connected to one end of the inner wall 131 and the outer wall 132, and the bottom surface 133 is connected to the other end of the inner wall 131 and the outer wall 132, so as to entirely or partially embed the annular isolation unit 13 into the space formed between the carrying part 1010 and the cover plate 102, and a setting space S is formed among the cover plate 102, the inner wall 131, the outer wall 132, and the bottom surface 133.

[0029] In another feasible embodiment, the difference between this embodiment and the above embodiment is that at least a part of the side wall of the body 101 bends and expands outward in the opposite direction of the outer wall 132 of the annular isolation unit 13, so that the carrying part 1010 protrudes from the body 101. Similarly, the carrying part 1010 entirely or partially carries the bottom surface 133 of the annular isolation unit 13, and the cover plate 102 of the cavity 10 is connected to one end of the inner wall 131 and the outer wall 132. The bottom surface 133 is connected to the other end of the inner wall 131 and the outer wall 132, so as to entirely or partially embed the annular isolation unit 13 into the space formed between the carrying part 1010 and the cover plate 102, and a setting space S is formed among the cover plate 102, the inner wall 131, the outer wall 132, and the bottom surface 133. It should be noted that the carrying part 1010 in the following Figures 2 to 5 other embodiments is described by Figure 1 this, but the setting method of the carrying part 1010 in this feasible embodiment can be reasonably extended to Figures 2 to 5 the other embodiments.

[0030] In another feasible embodiment, as Figure 2 shown, the difference between this embodiment and the first embodiment is that the plasma-enhanced thin film deposition device 1 of the second embodiment of the present invention further includes at least one intake pipeline 19 passing through the cover plate 102, and a gas is conveyed to the setting space S of the annular isolation unit 13 through the intake pipeline 19. Further, the intake pipeline 19 supplies a fluid such as nitrogen into the setting space S. Furthermore, at least one valve is provided on the intake pipeline 19.

[0031] In another feasible embodiment, as Figure 3As shown, the difference between this embodiment and the first embodiment is that the annular isolation unit 13 of the plasma enhanced thin film deposition apparatus 1 of the third embodiment of the present invention further includes a sealing cover 134, wherein the sealing cover 134 connects to the other ends of the inner wall 131 and the outer wall 132, and a setting space S is formed between the sealing cover 134, the inner wall 131, the outer wall 132 and the bottom surface 133. That is, the cover plate 102 is connected to and / or pressed against the other ends of the inner wall 131 and the outer wall 132 through the sealing cover 134. Further, a sealing member is disposed at the other ends of the inner wall and the outer wall 132 or the sealing cover 134, so that the other ends of the inner wall 131 and the outer wall 132 and the sealing cover 134 press the sealing member therein.

[0032] In another feasible embodiment, as Figure 4 shown, the difference between this embodiment and the third embodiment is that the plasma enhanced thin film deposition apparatus 1 of the fourth embodiment of the present invention further includes at least one intake pipeline 19 passing through the sealing cover 134, and a gas is conveyed to the setting space S of the annular isolation unit 13 through the intake pipeline 19. Further, the intake pipeline 19 supplies fluids such as nitrogen into the setting space S. Further still, at least one valve is provided on the intake pipeline 19. Reasonably, the intake pipeline 19 further passes through the cover plate 102.

[0033] In another feasible embodiment, as Figure 5 shown, the difference between this embodiment and the first embodiment is that the annular isolation unit 13 of the plasma enhanced thin film deposition apparatus 1 of the fifth embodiment of the present invention has an opening 130, and the setting space S is fluidly connected to an atmospheric environment outside the setting space S through the opening 130. Specifically, a through portion of the cover plate 102 penetrates upward from the adjacent opening 130, and the through portion corresponds to at least a part of the opening 130, so that the setting space S is fluidly connected to an atmospheric environment outside the setting space S in sequence through the opening 130 and the through portion.

[0034] Please refer to Figure 6 , which is a cross-sectional schematic view of the plasma enhanced thin film deposition apparatus 1 of the sixth embodiment of the present invention. As Figure 6 shown, the difference between the sixth embodiment of the present invention and the first embodiment is that the annular isolation unit 13 of the first embodiment is replaced with an annular isolation unit 23 including an inner wall 231 and a bottom surface 233, and the structure of the cavity 10 is replaced with a cavity 20.

[0035] Specifically, the inner wall 231 is disposed around the outside of the reaction space R and is connected to the cavity 20, while the bottom surface 233 is connected to the inner wall 231 and the cavity 20, and a setting space S is formed among the bottom surface 233, the inner wall 231 and the cavity 20. In addition, the cavity 20 is not provided with a carrying part 1010 and a cover plate 102, and the cavity 20 (also called the main body 201 in this case) is directly connected to the inner wall 231 and the bottom surface 233, so that the main body 201 of the cavity 20, the inner wall 231 and the bottom surface 233 form the setting space S. Among them, the accommodating space 100 is replaced by the accommodating space 200, and the cavity opening 2011 is replaced by the accommodating space 200. By connecting the cavity 20 to the inner wall 231 and the bottom surface 233, the plasma enhanced thin film deposition apparatus 1 of the present invention (the annular isolation unit 13 and the accommodating space 100 are completely separated from each other and are independent) can better avoid the problem that sediments are generated due to gaps between the annular isolation unit 13 and the accommodating space 100, and further cause arcs during the process. Obviously, in the case where the annular isolation unit 13 is a one-piece formed ceramic ring, a metal oxide ring or a metal nitride ring, the surface of the one-piece formed annular isolation unit 13 can completely avoid the gaps caused by the component combination of the annular isolation unit 13, and avoid the problem that sediments are generated in the gaps and further cause arcs during the process, and the sediments on the surface of the one-piece formed annular isolation unit 13 can also be easily removed during the cleaning stage.

[0036] In another feasible embodiment, as Figure 7 shown, the difference between this embodiment and the sixth embodiment is that the plasma enhanced thin film deposition apparatus 1 of the seventh embodiment of the present invention further includes at least one intake pipeline 19 passing through the cavity 20, and a gas is transported to the setting space S of the annular isolation unit 23 via the intake pipeline 19. Further, the intake pipeline 19 supplies fluids such as nitrogen into the setting space S. Furthermore, at least one valve is provided on the intake pipeline 19.

[0037] In another feasible embodiment, as Figure 8 shown, the difference between this embodiment and the sixth embodiment is that the annular isolation unit 23 of the plasma enhanced thin film deposition apparatus 1 of the eighth embodiment of the present invention has an opening 230, and the setting space S is fluidly connected to an atmospheric environment outside the setting space S via the opening 230. Specifically, a through portion penetrates upward through the cavity 20 from the horizontal plane H at the end where the inner wall 231 is connected to the cavity 20, and the through portion corresponds to at least a part of the opening 230, so that the setting space S is fluidly connected to an atmospheric environment outside the setting space S in sequence via the opening 230 and the through portion. Further, there are still connecting portions at some places of the cavity 20 so that the inner side portion of the cavity 20 relative to the annular isolation unit 23 bridges the outer side portion of the cavity 20 relative to the annular isolation unit 23.

[0038] In another embodiment, a through portion extends through the cavity 20 laterally from the vertical surface at the end of the cavity 20 connected to the bottom surface 233, and the through portion corresponds to at least a part of the opening 230, so that the setting space S is fluidly connected to an atmospheric environment outside the setting space S in sequence through the opening 230 and the through portion. Further, there are still connecting portions in some places of the through portion to bridge the upper portion of the cavity 20 relative to the annular isolation unit 23 and the lower portion of the cavity 20 relative to the annular isolation unit 23.

[0039] In another feasible embodiment, as Figure 9 and Figure 10 shown, which are respectively a perspective view and a top view of the setting structure of the radio frequency coil 14 and the annular isolation unit 13 of the present invention. Among them, a groove 1331 is formed on the bottom surface 133 for setting the radio frequency coil 14, and a part of the radio frequency coil 14 is located in the groove 1331. In addition, a fixing member 135 is provided on the bottom surface 133 to fix the radio frequency coil 14 to the bottom surface 133 and / or the groove 1331. Further, the fixing member includes a recess 1341 to accommodate another part of the radio frequency coil 14.

[0040] It should be noted that a groove may also be formed on the bottom surface 233 of the annular isolation unit 23 for setting the radio frequency coil 14, and the detailed setting manner of the radio frequency coil 14 and the fixing member is as described above.

[0041] Advantages of the present invention:

[0042] Through the mutually independent setting space and accommodating space, the present invention can provide a plasma-enhanced thin film deposition device including a seamless annular isolation unit, thereby better avoiding mutual contamination between the radio frequency coil and the reaction space. Further, the surface of the integrally formed annular isolation unit can completely avoid the gaps caused by the combination of components of the annular isolation unit, and avoid the problem of arc generation during the process due to the deposition of sediments in the gaps. Moreover, the sediments on the surface of the integrally formed annular isolation unit can also be easily removed during the cleaning stage.

[0043] The above is only a preferred embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made according to the shape, structure, features and spirit described in the claims of the present invention should be included in the claims of the present invention.

Claims

1. A plasma enhanced thin film deposition apparatus, comprising: A chamber, including an accommodation space, the chamber including a cover plate, a body, and the body having a carrying portion; A carrier, located in the accommodation space and having a carrying surface, and carrying at least one substrate through the carrying surface; A spraying head, fluidly connected to the accommodation space, the spraying head having a plurality of air outlets, and the air outlets facing the carrying surface of the carrier; An annular isolation unit, including a setting space, wherein the carrier, the spraying head, and the annular isolation unit define a reaction space in the accommodation space, the setting space and the accommodation space are independent of each other, and the spraying head is used to provide at least one precursor to the reaction space; Wherein the annular isolation unit further includes an inner wall, which is disposed around the outside of the reaction space; An outer wall, which is disposed around the outside of the inner wall, wherein one end of the cover plate of the chamber is connected to the inner wall and the outer wall; and A bottom surface, connected to the other ends of the inner wall and the outer wall, and disposed on the carrying portion of the body, wherein the setting space is formed between the cover plate, the inner wall, the outer wall, and the bottom surface; And A radio frequency coil, disposed in the setting space of the annular isolation unit, and the radio frequency coil is coupled to a radio frequency power supply.

2. The plasma enhanced thin film deposition apparatus according to claim 1, wherein The body has a chamber opening, wherein the chamber opening communicates with the accommodation space, and the carrying portion protrudes or recesses from the body and is used to carry the annular isolation unit; and The cover plate covers the chamber opening of the body, and forms the accommodation space between the body and the cover plate.

3. The plasma enhanced thin film deposition apparatus according to claim 1, wherein Including at least one intake pipeline passing through the cover plate, and conveying a gas to the setting space of the annular isolation unit through the intake pipeline.

4. The plasma enhanced thin film deposition equipment according to claim 2, wherein Wherein the annular isolation unit includes: An inner wall, which is disposed around the outside of the reaction space; An outer wall, which is disposed around the outside of the inner wall; A bottom surface, connected to one ends of the inner wall and the outer wall, and disposed on the carrying portion of the body; and A sealing cover, connected to the other ends of the inner wall and the outer wall, and forming the setting space between the sealing cover, the inner wall, the outer wall, and the bottom surface.

5. The plasma enhanced thin film deposition apparatus according to claim 4, wherein Including at least one intake pipeline passing through the sealing cover, and conveying a gas to the setting space of the annular isolation unit through the intake pipeline.

6. The plasma enhanced thin film deposition apparatus according to claim 2, wherein, Wherein the annular isolation unit has an opening, and the setting space is fluidly connected to an atmospheric environment outside the setting space through the opening.

7. The plasma enhanced thin film deposition apparatus according to claim 1, wherein Including at least one intake pipeline passing through the chamber, and conveying a gas to the setting space of the annular isolation unit through the intake pipeline.

8. The plasma enhanced thin film deposition apparatus according to claim 1, wherein Wherein the annular isolation unit has an opening, and the setting space is fluidly connected to an atmospheric environment outside the setting space through the opening.

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