Semiconductor process equipment and rectification structure cleaning method thereof

Abstract

The application discloses a semiconductor process equipment and a rectifying structure cleaning method thereof. The semiconductor process equipment comprises a process chamber, the process chamber comprises a cavity, a plasma generating device, a bearing device, a driving device and a rectifying structure, a process cavity is formed in the cavity; the rectifying structure is arranged in the cavity, the rectifying structure divides the process cavity into a generating cavity and a processing cavity from top to bottom; the plasma generating device is arranged outside the cavity and is used for ionizing process gas entering the generating cavity to form plasma; the bearing device is arranged in the processing cavity and is used for bearing a wafer; the rectifying structure is plate-shaped, a plurality of through holes are arranged on the rectifying structure, and the rectifying structure covers the wafer in the axial direction of the wafer; and the driving device is connected with the rectifying structure in a separable mode and is used for overturning the rectifying structure in the cavity. The application can realize cleaning of the back surface of the rectifying structure in the process chamber, and avoid particle pollution caused by peeling of by-products attached to the rectifying structure.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor equipment, and more particularly, relates to a semiconductor process equipment and a rectification structure cleaning method thereof. BACKGROUND

[0002] Polymer materials, also known as polymeric materials, have important applications in the microelectronic field. For example, polyimide (PI) is a kind of organic polymer material with good comprehensive performance, has high temperature resistance and high insulation performance, and is widely used in the field of microelectronic manufacturing. For another example, a photoresist layer material used for defining a pattern on a wafer, commonly known as photoresist or photoresist (PR), is mainly composed of various types of polymers. For example, phenolic resin is used for positive photoresist, and cyclized polyisoprene rubber, polyvinyl cinnamate, etc. are used for negative photoresist.

[0003] Since polymer materials are widely used in the microelectronic field, removing the polymer materials is also an important process, commonly known as de-gluing. However, the de-gluing process produces a lot of by-products, which are usually deposited in the chamber and are prone to produce particles and other defects. In particular, polymer deposition at the shower structure position in the de-gluing chamber is prone to peeling, thereby causing a decrease in device yield. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor process equipment and a rectification structure cleaning method thereof, which realizes cleaning of the back surface of the rectification structure in the process chamber and avoids peeling of the by-products attached to the rectification structure to cause particle pollution.

[0005] In a first aspect, the present application provides a semiconductor process equipment, which comprises: a process chamber, the process chamber comprising: a cavity, a plasma generating device, a bearing device, a driving device and a rectification structure, and a process cavity formed inside the cavity;

[0006] The rectification structure is arranged in the cavity, and the rectification structure divides the process cavity into a generating cavity and a processing cavity from top to bottom.

[0007] The plasma generating device is arranged outside the cavity, and is used for ionizing the process gas entering the generating cavity to form plasma.

[0008] The bearing device is arranged in the processing cavity, and is used for bearing a wafer.

[0009] The rectification structure is plate-shaped, has a plurality of through holes on the rectification structure, and covers the wafer in the axial direction of the wafer.

[0010] The driving device is connected to the rectification structure in a separable manner, and is used for turning over the rectification structure in the cavity.

[0011] Optionally, the driving device comprises a rotating mechanism;

[0012] The rectifying structure is in the shape of a circular plate, and the first end and the second end of the rectifying structure are connected to the side wall of the cavity through the rotating mechanism.

[0013] Optionally, the rotating mechanism comprises a rotating motor, a first rotating component and a second rotating component arranged on the side wall of the cavity;

[0014] The first rotating component comprises a first bearing and a first rotating shaft, the outer ring of the first bearing is fixedly connected to the side wall of the process cavity, one end of the first rotating shaft is sleeved on the inner ring of the first bearing, and the other end of the first rotating shaft is detachably connected to the first end of the rectifying structure;

[0015] The second rotating component comprises a second bearing and a second rotating shaft, the outer ring of the second bearing is fixedly connected to the side wall of the process cavity, one end of the second rotating shaft is sleeved on the inner ring of the second bearing, and the other end of the second rotating shaft is detachably connected to the second end of the rectifying structure;

[0016] The rotating motor is arranged outside the cavity, and the rotating shaft of the rotating motor is connected to the first rotating shaft.

[0017] Optionally, the first end and the second end of the rectifying structure are respectively provided with threaded holes, and the surfaces of the other ends of the first rotating shaft and the second rotating shaft are provided with threads for screwing with the threaded holes.

[0018] Optionally, the process cavity further comprises at least one limiting mechanism arranged on the side wall of the cavity, the limiting mechanism is coplanar with the two rotating mechanisms, and the side surface of the rectifying structure is provided with at least one limiting part matched with the limiting mechanism.

[0019] Optionally, the limiting mechanism comprises a pneumatic cylinder and a limiting pin;

[0020] The pneumatic cylinder is arranged outside the cavity and connected to one end of the limiting pin, the other end of the limiting pin penetrates through the side wall of the cavity and extends into the process cavity;

[0021] The limiting part is a pin hole matched with the limiting pin.

[0022] Optionally, a gap of 2-6mm is arranged between the edge of the rectifying structure and the side wall of the process cavity.

[0023] Optionally, the semiconductor process equipment further comprises a pre-evacuation chamber and a transfer chamber, the transfer chamber is arranged between the pre-evacuation chamber and the process chamber, and a transfer port is arranged between the process chamber and the pre-evacuation chamber and the transfer chamber respectively;

[0024] The pre-evacuation chamber is provided with a wafer support and a shower support, the wafer support is used for storing a wafer, and the shower support is used for storing the rectifier structure;

[0025] The transfer chamber is provided with a transfer robot, and the transfer robot is used for transferring the wafer or the rectifier structure between the pre-evacuation chamber and the process chamber;

[0026] The process chamber further comprises a plurality of jacks and a jack driving mechanism, a plurality of through holes for accommodating the plurality of jacks are arranged on the carrier in the vertical direction, and the jack driving mechanism is used for driving the plurality of jacks to ascend and descend, so as to ascend and descend the wafer or the rectifier structure between the wafer transfer position and the shower installation position.

[0027] Optionally, the contact area between the plurality of jacks and the rectifier structure does not overlap with the through hole.

[0028] Optionally, the top of the jack is a flat surface, and the edge of the rectifier structure is provided with a groove matched with the top of the jack.

[0029] Optionally, the plasma generating device comprises a radio frequency coil arranged on the side wall of the cavity.

[0030] Optionally, the process chamber is a stripping chamber, which is used for performing a stripping process and a chamber cleaning process.

[0031] In a second aspect, the present application provides a rectifier structure cleaning method, which utilizes the semiconductor process equipment of any one of the first aspect, and the method comprises:

[0032] Controlling the driving device to be connected with the rectifier structure and turning over the rectifier structure;

[0033] Passing process gas into the cavity, ionizing the process gas by the plasma generating device, and cleaning the back surface of the rectifier structure;

[0034] After cleaning, controlling the driving device to turn over the rectifier structure again.

[0035] Optionally, the method further comprises:

[0036] When it is necessary to replace the rectifier structure, controlling the jack driving mechanism to drive the plurality of jacks to ascend and contact the bottom surface of the rectifier structure;

[0037] controlling the driving device to be separated from the rectification structure;

[0038] controlling the needle driving mechanism to drive the plurality of needles to lower the rectification structure to the height of the wafer transfer port;

[0039] controlling the transfer robot to take out the rectification structure from the process chamber and transfer the rectification structure to the shower holder;

[0040] controlling the transfer robot to take down a new rectification structure from the shower holder and transfer the new rectification structure to the plurality of needles;

[0041] controlling the needle driving mechanism to drive the plurality of needles to be raised, and lift the rectification structure to the installation position;

[0042] controlling the driving device to be connected with the rectification structure.

[0043] The present application has the following advantages:

[0044] The present application sets the driving device connected with the rectification structure in the process chamber, and realizes the flipping and switching of the front and back surfaces of the rectification structure through the driving device, compared with the current situation that only the front surface of the rectification structure can be cleaned, the cleaning of the back surface of the rectification structure can be completed in the case of only ICP electrode.

[0045] Further, the present application sets the shower holder in the pre-evacuation chamber, and transfers the rectification structure in the process chamber and the pre-evacuation chamber through the robot in the transfer chamber, so that the replacement of the rectification structure can be completed without opening the process chamber, thereby avoiding the change of the chamber state caused by opening the process chamber to replace the rectification structure, and improving the efficiency of replacing the rectification structure.

[0046] The system of the present application has other characteristics and advantages, which will be apparent or will be described in detail in the accompanying drawings and the subsequent detailed description incorporated herein, which together serve to explain the specific principles of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0047] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings in which like reference characters refer to like parts throughout and in which:

[0048] Figure 1 A structure diagram of a process chamber of an existing degumming machine is shown.

[0049] Figure 2A top view of the shower head structure in the process chamber of an existing degumming machine is shown.

[0050] Figure 3 A structural diagram of a semiconductor process apparatus according to Embodiment 1 of the present invention is shown.

[0051] Figure 4a and Figure 4b A schematic diagram of the shower head structure flipping in Embodiment 1 of the present invention is shown.

[0052] Figure 5 A top view of the shower head structure in embodiment 1 of the present invention, in conjunction with the rotating mechanism and the limiting mechanism, is shown.

[0053] Figure 6 A schematic diagram of the shower head structure and the rotating mechanism in Embodiment 1 of the present invention is shown.

[0054] Figure 7 A schematic diagram of the shower head structure and the limiting mechanism in Embodiment 1 of the present invention is shown.

[0055] Figure 8 A schematic diagram of the shower head structure being flipped in Embodiment 1 of the present invention is shown.

[0056] Figure 9 A schematic diagram of the wafer transfer into or out of the process chamber in Embodiment 2 of the present invention is shown.

[0057] Figure 10 This diagram illustrates the process of the shower head structure entering or exiting the process chamber in Embodiment 2 of the present invention.

[0058] Figure 11 The diagram shows the installation of the shower head structure when the flipping mechanism of the shower head structure and the shower head feeder are used together in Embodiment 2 of the present invention. Detailed Implementation

[0059] The existing chamber structure of the glue remover is as follows: Figure 1 As shown, it includes: a process chamber 101, with an air inlet 102 (center and edge) at its top; a rectifier shower structure 103 inside the process chamber, which divides the process chamber into a generation chamber and a processing chamber from top to bottom; a radio frequency coil 104 for ionizing the process gas entering the generation chamber to form plasma; and an electrostatic chuck 105 for carrying the wafer 108 inside the processing chamber, with a lower electrode 106 below the electrostatic chuck. Figure 2 As shown, the shower head structure 103 is plate-shaped, has multiple through holes, and covers the wafer 108 along the axial direction of the wafer 108.

[0060] The research shows that the shower structure 103 in the existing degumming machine is fixed in the chamber by a screw 107. When the ICP upper electrode is used to ignite, the upward side of the shower structure 103 can be cleaned, but the back side (the side facing the wafer) of the shower structure 103 is easy to attach by-products and is not easy to be cleaned, which causes the by-products attached to the shower structure to be easy to peel off, resulting in the problem of particle increase. At the same time, when the shower structure 103 needs to be replaced, the process chamber 101 needs to be opened to remove and install a brand new one. However, because the state of the chamber will change after the process chamber 101 is opened, a long time is needed for overall chamber maintenance (scrubbing, replacement, etc.).

[0061] The present application provides a reversible shower structure in the process chamber, which realizes the rotation of the front and back sides through a driving mechanism. In this way, the cleaning of the back side of the shower can be realized even if only the ICP upper electrode is used. At the same time, the present application can also transport the shower structure in the process chamber and the pre-evacuation chamber, realize the replacement of the shower structure without opening the process chamber, avoid the change of the state of the chamber caused by opening the chamber to replace the shower structure, and improve the efficiency of replacing the shower structure.

[0062] The present application will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to make the present application more thorough and complete, and to fully convey the scope of the present application to those skilled in the art.

[0063] Figure 3 A structural diagram of a semiconductor process equipment according to an embodiment of the present application is shown.

[0064] As shown in Figure 3 A semiconductor process equipment, the semiconductor process equipment comprising: a process chamber, the process chamber comprising: a cavity 1, a plasma generating device 4, a bearing device, a driving device and a rectifying structure 3, a process cavity is formed in the cavity 1, an air inlet 2 is arranged at the top of the cavity 1;

[0065] The rectifying structure 3 is arranged in the cavity, which divides the process cavity into a generating cavity and a processing cavity from top to bottom; the plasma generating device 4 is arranged outside the cavity 1, which is used to ionize the process gas entering the generating cavity to form plasma, and the plasma generating device 4 comprises a radio frequency coil arranged on the side wall of the cavity;

[0066] The bearing device is arranged in the processing cavity and used for bearing the wafer, and the bearing device comprises an electrostatic chuck 5, and a lower electrode 6 is arranged below the electrostatic chuck 5; the rectifying structure 3 is in the form of a plate, the rectifying structure 3 is provided with a plurality of through holes, and the rectifying structure 3 covers the wafer in the axial direction of the wafer; wherein the driving device is connected to the rectifying structure 3 in a detachable manner and used for overturning the rectifying structure 3 in the cavity 1.

[0067] In the embodiment, the driving device comprises a rotating mechanism 7, the rectifying structure 3 is in the form of a circular plate, and the first end and the second end of the rectifying structure 3 are connected to the side wall of the cavity 1 through the rotating mechanism 7. The overturning of the rectifying structure 3 is as shown in Figure 4a and Figure 4b .

[0068] The process cavity of the embodiment is a stripping cavity and is used for performing a stripping process and a cavity cleaning process. The rectifying structure 3 in the embodiment is a “shower structure” in a stripping machine, and the rectifying structure 3 is used for rectifying plasma when the plasma enters the processing cavity from a generating cavity. The plasma can uniformly reach the wafer surface through the flow guiding effect of the plurality of through holes on the rectifying structure 3, so that the stripping process is completed.

[0069] As shown in Figure 5 and Figure 6 , the rotating mechanism 7 in the embodiment comprises a rotating motor 8, a first rotating assembly 9 and a second rotating assembly 10 arranged on the side wall of the cavity 1.

[0070] The first rotating assembly 9 comprises a first bearing and a first rotating shaft. The outer ring of the first bearing is fixedly connected to the side wall of the cavity 1, and the first rotating shaft is sleeved on the inner ring of the first bearing. One end of the first rotating shaft is detachably connected to the first end of the rectifying structure 3.

[0071] The second rotating assembly 10 comprises a second bearing and a second rotating shaft. The outer ring of the second bearing is fixedly connected to the side wall of the cavity 1, and the second rotating shaft is sleeved on the inner ring of the second bearing. The other end of the second rotating shaft is detachably connected to the second end of the rectifying structure 3.

[0072] The rotating motor 8 is arranged outside the cavity 1, and the rotating shaft of the rotating motor 8 is connected to the first rotating shaft.

[0073] The first end and the second end of the rectifying structure 3 are respectively provided with threaded holes, and the surfaces of the other end of the first rotating shaft and the other end of the second rotating shaft are provided with threads for screwing with the threaded holes.

[0074] As shown in Figure 5 and Figure 7 , the process cavity in the embodiment further comprises at least one limiting mechanism 11, the limiting mechanism 11 is arranged on the side wall of the cavity 1, the limiting mechanism 11 is coplanar with the two rotating mechanisms 7, and the side surface of the rectifying structure 3 is provided with at least one limiting part matched with the limiting mechanism 11.

[0075] The limiting mechanism 11 includes a cylinder 12 and a limiting pin 13; the cylinder 12 is disposed outside the cavity 1 and connected to one end of the limiting pin 13, and the other end of the limiting pin 13 passes through the side wall of the cavity 1 and extends into the process cavity.

[0076] The limiting part is a pin hole that mates with the limiting pin 13.

[0077] Preferably, the number of limiting pins 13 and pin holes is 1-6.

[0078] In this embodiment, a gap of 2-6 mm is provided between the edge of the rectifier structure 3 and the side wall of the cavity 1.

[0079] Specifically, the rectifier structure 3 is mounted on the inner wall of the cavity 1 within the cavity 1, supported by the limiting mechanism 11 and the rotating mechanism 7. When the rectifier structure 3 needs to be rotated, the limiting pin 13 is pulled outward, and the rotating bearing and the rectifier structure 3 are driven to flip by the rotating motor 8. After flipping, the limiting pin 13 is inserted into the pin hole of the rectifier structure 3 for locking. The rectifier structure 3 has threaded holes on both sides of its diameter for threaded connection with the rotating shaft, and the rotating motor 8 provides power during rotation. At the same time, it has a certain number (1-6) of pin holes on its sides for connection with the limiting pin, and the limiting pin 13 is powered by the outer cylinder 12. During installation, there is a 2-6mm gap between the shower head and the inner wall of the cavity, thus ensuring that the shower head can rotate smoothly.

[0080] When the process chamber is undergoing the resist removal process, the rectifier structure 3 is in a state where the front side faces upward and the back side faces downward, with the back side facing the wafer. When the polymer deposition on the back side of the rectifier structure 3 reaches a certain level, it can be removed according to... Figure 8 Rotate the shower head as shown so that the back of the rectifier structure 3 faces upward and the front faces downward, and perform plasma cleaning on the rectifier structure 3 according to the following process parameters:

[0081]

[0082] The cleaning process parameters are set as follows: pressure 300-1000 mTorr, upper electrode 4 power 1000-3000 W, lower electrode 6 power 0 W, temperature 200-250℃, O2 flow rate 3000-8000 sccm, N2 flow rate 10% of O2 flow rate, and time 30-90 s. After cleaning, the rectifier structure 3 is rotated back to its facing-up position for use. The cleaning of the front of the rectifier structure 3 is consistent with the original ICP upper electrode ignition cleaning method, and of course, the front of the rectifier structure 3 can also be cleaned using the above cleaning process parameters.

[0083] Example 2

[0084] like Figure 9 - Figure 10As shown, the semiconductor processing equipment in this embodiment is based on the semiconductor processing equipment in Embodiment 1, and further comprises a pre-evacuation chamber 15 (load lock) and a transfer chamber 14, which is arranged between the pre-evacuation chamber 15 and the process chamber 1, and is respectively provided with a wafer transfer port with the process chamber 1 and the pre-evacuation chamber 15;

[0085] The pre-evacuation chamber 15 is provided with a wafer support 16 and a shower support 17, the wafer support 16 is used to store a wafer 20, and the shower support 17 is used to store the rectifier structure 3.

[0086] The transfer chamber 14 is provided with a transfer robot 18, which is used to transfer the wafer 20 or the rectifier structure 3 between the pre-evacuation chamber 15 and the process chamber 1.

[0087] The process chamber 1 further comprises a plurality of pins 21 and a pin driving mechanism 19, which are arranged at the bottom of the chamber 1, and the carrier device (electrostatic chuck 5 and lower electrode 6) is provided with a plurality of through holes in the vertical direction for accommodating the plurality of pins 21, and the pin driving mechanism 19 is used to drive the plurality of pins 21 to rise and fall, so as to lift the wafer 20 or lift the rectifier structure 3 between the wafer transfer position and the shower installation position.

[0088] Preferably, the contact area between the plurality of pins 21 and the rectifier structure 3 in this embodiment does not overlap with the through hole on the shower. At the same time, the top of the pin 21 is a plane; the edge of the rectifier structure 3 is provided with a groove matched with the top of the pin 21. The number of pins 21 is preferably three.

[0089] Specifically, the rectifier structure 3 in this embodiment can be transferred into or out of the chamber like the wafer 20, as shown in Figure 9 When the rectifier structure 3 is contaminated by by-products, a new shower can be replaced, as shown in Figure 10

[0090] The specific operation process is as follows: when the rectifier structure 3 is transferred in, the transfer robot 18 takes the rectifier structure 3 from the shower support 17, transfers the shower into the chamber through the transfer port, lowers the height of the robot 18 to place the shower on the pins 21, retracts the robot 18, and the pins 21 are raised to lift the shower to the installation level, and the limiting fixing pin (similar to Figure 8 As shown) is inserted to lock the shower; when the rectifier structure 3 is transferred out, the process is opposite to the above process.

[0091] Generally, the diameter of the rectifier structure 3 is 30-100mm larger than that of the wafer, the thickness is 2-8mm, the material is metal, quartz, ceramic, etc., the total weight is 0.5-3kg (the weight of a 300mm wafer is about 0.13kg), and the distance between the rectifier structure 3 and the electrostatic chuck 5 is 30-120mm. ​

[0092] In the specific implementation process, in order to ensure that the shower head and wafer can be normally transmitted into and out of the transmission chamber, corresponding adaptive modifications are required, including:

[0093] ① The size of each transfer port is appropriately increased to ensure that the dimensions of the rectifier structure 3 and the wafer 20 can be transferred in and out normally;

[0094] ② At an appropriate position in the pre-evacuation chamber 15 (e.g.) Figure 9 , Figure 10 A shower head bracket 17 is added at the loadlock position to store brand new shower heads and shower heads contaminated by by-products;

[0095] ③ The strength of the robotic arm 18 transmitting fingers and the chamber pin 21 is adapted to the structure and material design to ensure that it can properly support the rectifier structure 3. Preferably, the thickness of the robotic arm 8 transmitting fingers is increased to 5-8mm, the diameter of the chamber pin 21 is increased to 4-6mm, and the material is preferably metal.

[0096] ④ The height of multiple ejector pins 21 needs to be continuously adjustable to ensure that the rectifier structure 3 can be placed normally on the shower head mounting surface (usually 10-100mm higher than the highest position of the wafer transmission). The lifting power of the ejector pins 21, i.e. the ejector pin drive mechanism 19, preferably adopts a servo motor drive, which can achieve stable vertical movement and a large movement stroke. The rectifier structure 3 is installed on the mounting surface according to the movement stroke of the ejector pins 21.

[0097] ⑤ To prevent the ejector pin 21 from being mistakenly inserted into the vent (i.e., through hole) on the rectifier structure 3, and to increase the friction between the rectifier structure 3 and the ejector pin 21, the vent on the rectifier structure 3 needs to be modified accordingly. The position of the vent should avoid the annular area formed by the projection of the ejector pin 21 (three origins). A groove with a depth of 0.2-0.3mm can be machined in this annular area. The contact position between the ejector pin 21 and the wafer or shower head should use a planar contact instead of a spherical contact to increase the contact area and prevent slippage.

[0098] In this embodiment, the reversible mechanism of the rectifier structure 3 can be used in conjunction with the input and output design of the rectifier structure 3, or it can be used independently. When used in conjunction, the installation or disassembly process of the rectifier structure 3 is as follows: Figure 11 As shown, during installation, the ejector pin 21 lifts the rectifier structure 3 to a designated height. Then, the rotary motor 8 drives the first rotating component 9 and the second rotating component 10 to rotate, connecting them to the threaded holes at both ends of the rectifier structure 3. Subsequently, the cylinder drives the limiting pin 13 to insert into the pin hole on the side of the rectifier structure 3, fixing its position. Afterward, the ejector pin 21 falls back to its original position. When the polymer deposit on the surface of the rectifier structure 3 reaches a certain level, according to... Figure 8 The rectifier structure 3 is rotated and plasma cleaning is performed according to the process parameters in Example 1. When the rectifier structure 3 needs to be replaced, it is done according to... Figure 11The shown scheme disassembles the rectification structure 3, and then the replacement is performed according to the shown method. Figure 10 The shown scheme disassembles the rectification structure 3, and then the replacement is performed according to the shown method.

[0099] In summary, the semiconductor process equipment of the present application can clean the back of the rectification structure 3 by setting the driving device to flip the rectification structure 3 in the process cavity, which can solve the particle pollution problem caused by the peeling of the by-products attached to the back of the rectification structure 3 in the glue removal machine, prolong the equipment maintenance cycle, reduce particle pollution, and improve yield. Moreover, the rectification structure 3 can be transferred in and out by the robot as the wafer transmission, which realizes the replacement of the rectification structure 3 without opening the process cavity, thereby avoiding the change of the process cavity environment and improving the replacement efficiency.

[0100] The above has described the embodiments of the present application, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A semiconductor process apparatus, characterized by, The semiconductor process equipment comprises a process chamber, the process chamber comprises a cavity, a plasma generating device, a bearing device, a driving device and a rectifying structure, and a process cavity is formed inside the cavity; The rectifying structure is arranged in the cavity, and the rectifying structure divides the process cavity into a generating cavity and a processing cavity from top to bottom; The plasma generating device is arranged outside the cavity and is used for ionizing process gas entering the generating cavity to form plasma; The bearing device is arranged in the processing cavity and is used for bearing a wafer; The rectifying structure is plate-shaped, has a plurality of through holes, and covers the wafer in the axial direction of the wafer; The driving device is connected to the rectifying structure in a detachable manner and is used for turning over the rectifying structure in the cavity.

2. The semiconductor process apparatus according to claim 1, wherein The driving device comprises a rotating mechanism; The rectifying structure is circular plate-shaped, and the first end and the second end of the rectifying structure are connected to the side wall of the cavity through the rotating mechanism.

3. The semiconductor process apparatus according to claim 2, wherein The rotating mechanism comprises a rotating motor, a first rotating component and a second rotating component arranged on the side wall of the cavity; The first rotating component comprises a first bearing and a first rotating shaft, the outer ring of the first bearing is fixedly connected to the side wall of the process chamber, one end of the first rotating shaft is sleeved on the inner ring of the first bearing, and the other end of the first rotating shaft is detachably connected to the first end of the rectifying structure; The second rotating component comprises a second bearing and a second rotating shaft, the outer ring of the second bearing is fixedly connected to the side wall of the process chamber, one end of the second rotating shaft is sleeved on the inner ring of the second bearing, and the other end of the second rotating shaft is detachably connected to the second end of the rectifying structure; The rotating motor is arranged outside the cavity, and the rotating shaft of the rotating motor is connected to the first rotating shaft.

4. The semiconductor process apparatus according to claim 3, wherein The first end and the second end of the rectifying structure are respectively provided with threaded holes, and the surfaces of the other end of the first rotating shaft and the other end of the second rotating shaft are provided with threads for screwing with the threaded holes.

5. The semiconductor process apparatus according to claim 2, wherein The process chamber further comprises at least one limiting mechanism arranged on the side wall of the cavity, the limiting mechanism is coplanar with the two rotating mechanisms, and the side surface of the rectifying structure is provided with at least one limiting portion matched with the limiting mechanism.

6. The semiconductor process apparatus according to claim 5, wherein The limiting mechanism comprises a pneumatic cylinder and a limiting pin; The pneumatic cylinder is arranged outside the cavity and is connected to one end of the limiting pin, the other end of the limiting pin penetrates through the side wall of the cavity and extends into the process cavity; The limiting portion is a pin hole matched with the limiting pin.

7. The semiconductor process apparatus according to claim 1, wherein A gap of 2-6 mm is arranged between the edge of the rectifying structure and the side wall of the process chamber.

8. The semiconductor process apparatus according to claim 1, wherein The semiconductor process equipment further comprises a pre-evacuation chamber and a transmission chamber, the transmission chamber is arranged between the pre-evacuation chamber and the process chamber, and the transmission chamber is respectively provided with a wafer transmission port between the process chamber and the pre-evacuation chamber; The pre-evacuation chamber is provided with a wafer support and a shower support, the wafer support is used for storing wafers, and the shower support is used for storing the rectifying structure; A transfer robot is arranged in the transfer chamber and used to transfer the wafer or the rectifier structure between the pre-evacuation chamber and the process chamber. The process chamber further comprises a plurality of pins and a pin driving mechanism, a plurality of through holes for allowing the pins to pass through are arranged on the carrier in vertical direction, and the pin driving mechanism is used to drive the pins to move up and down so as to lift the wafer or the rectifier structure between the wafer transfer position and the shower head installation position.

9. The semiconductor process apparatus according to claim 8, wherein The contact area between the pins and the rectifier structure does not overlap with the through holes.

10. The semiconductor process apparatus according to claim 9, wherein The top of the pin is flat, and the edge of the rectifier structure is provided with a groove matched with the top of the pin.

11. The semiconductor process apparatus according to claim 1, wherein The plasma generating device comprises a radio frequency coil arranged on the side wall of the cavity.

12. The semiconductor process apparatus according to claim 1, wherein The process chamber is a stripping chamber used to perform stripping process and chamber cleaning process.

13. A method of cleaning a rectification structure using the semiconductor processing apparatus according to any one of claims 1 to 12, characterized by, The method comprises: controlling the driving device to connect with the rectifier structure and turn over the rectifier structure; introducing process gas into the cavity, ionizing the process gas by the plasma generating device to clean the back surface of the rectifier structure; after cleaning, controlling the driving device to turn over the rectifier structure again.

14. The method of claim 13, wherein The semiconductor process equipment of claim 8, wherein the method further comprises: when the rectifier structure needs to be replaced, controlling the pin driving mechanism to drive the pins to move up and contact with the bottom surface of the rectifier structure; controlling the driving device to separate from the rectifier structure; controlling the pin driving mechanism to drive the pins to move down to the wafer transfer port height and carry the rectifier structure; controlling the transfer robot to take out the rectifier structure from the process chamber and transfer the rectifier structure to the shower head support; controlling the transfer robot to take down a new rectifier structure from the shower head support and transfer the new rectifier structure to the pins; controlling the pin driving mechanism to drive the pins to move up and lift the rectifier structure to the installation position; controlling the driving device to connect with the rectifier structure.

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