An organic compound containing a polyfluoro long chain and its application

Abstract

The present invention discloses an organic compound containing a polyfluoro long chain and its applications. By introducing a polyfluoro long chain into the compound of the present invention, the conjugated system of the molecular structure is broken, causing the absorption spectrum of the material to shift blue, resulting in no absorption in the visible light region and improving the transmittance of the material in the visible light region; an appropriate fluorine chain length can enable the material to maintain an appropriate evaporation temperature for evaporation coating, allowing for long-term evaporation coating without decomposition, which can increase the industrial processing window and improve the thermal stability of the material; due to the exposed polyfluoro long chain, the molecule has a spherical spatial configuration similar to a fluorine chain wrapping the parent nucleus, which is conducive to forming a lower surface tension. It can be used as a cathode patterning material, capable of inhibiting the attachment and deposition of metal electrodes, obtaining a higher transmittance of the OLED device, and can be applied to the technical direction of the under-screen camera of the OLED screen, which is beneficial to improving the transmittance of the under-screen camera of the OLED screen.

Description

Technical Field

[0001] The present invention belongs to the technical field of displays, and relates to an organic compound containing a polyfluoro long chain, a multilayer film structure containing the same, and an OLED optoelectronic device. Background Art

[0002] An organic light-emitting diode (OLED) is also known as an organic light-emitting device. It is a technology in which an organic material emits light through carrier injection and recombination under the action of an electric field. It can convert electrical energy into light energy through an organic light-emitting material, including a passive-driven OLED (PMOLED) and an active-driven OLED (AMOLED). OLED is a new generation of display technology following the cathode ray tube (CRT) and the liquid crystal display (LCD).

[0003] The essence of an OLED is a thin-film stacking device. In theory, when both the anode and the cathode are transparent electrodes, the light emitted by the light-emitting layer can propagate from the anode to the outside of the device or from the cathode to the outside of the device. Therefore, according to the path of light transmission, the device can be divided into a bottom-emission device and a top-emission device.

[0004] The light of the bottom-emission device propagates from the anode through the substrate to the outside of the device, and the light of the top-emission device propagates to the outside of the device through the cathode. Due to the different light-emitting methods of the two devices, their application methods are very different. If a bottom-emission device is used in an active matrix structure, its light-emitting path is organic layer - anode - TFT - substrate. The TFT is a mesh array switch deposited on the substrate. Due to the presence of the TFT, the aperture ratio of the device is further reduced, and the outgoing light will be blocked by reflection, scattering, etc. when it propagates here and cannot propagate to the outside of the device, seriously affecting the display effect of the device. The light-emitting direction of the top-emission device is on the cathode side and does not need to pass through the substrate. Therefore, it also avoids the TFT structure and successfully avoids the problem of reduced aperture ratio that appears in the bottom-emission device, making the image more delicate and clear, and at the same time, the color vividness is also higher.

[0005] In the structure of a top-emitting organic light-emitting device, traditional cathode materials generally use very thin metal materials, and basically cover the entire OLED. This solution has remained unchanged for nearly 30 years since the development of OLEDs. However, for some new applications (such as under-screen fingerprint, under-screen camera, and large-size panels), the selection of metal materials and the evaporation preparation process have become a key to technology development. In particular, with the rapid development of the high screen-to-body ratio mobile phone market, the demand for full-screen mobile phones is becoming increasingly strong. Due to the limitations of traditional technologies, the camera on the OLED screen cannot be completely hidden, resulting in notches, pill-shaped screens, or water-drop-shaped screens, etc., which not only reduce the screen-to-body ratio of the mobile phone but also greatly affect the visual experience. The new top cathode electrode patterning technology has emerged. Based on the self-assembly process, it can not only improve the transparency of the OLED panel but also achieve the hiding of the under-screen camera;

[0006] With the development of smartphones and tablets, OLED screens have been sought after by the market. Especially recently, with the popularization of full-screen displays, the requirement for hiding the front-screen cameras and sensors of mobile phones has become increasingly strong. Although full-screen mobile phones based on the pop-up design can solve the problem of the screen-to-body ratio, they bring other problems. For example, they increase the thickness, weight, and design cost of the mobile phone, and reduce the reliability of mobile phone cameras, resulting in this solution being gradually abandoned by the market. Recently, under-screen camera and under-screen fingerprint technologies can perfectly solve the above problems. This technology is actually an application of transparent OLED displays, which requires the screen to have very high transmittance in the visible light and near-infrared light fields. Therefore, improving the screen transmittance is the core and key to solving the above problems.

[0007] The cathode patterning technology includes cathode patterning materials (CPM) and cathode auxiliary materials (CEM). Among them, CPM materials are a type of low-temperature organic material that can be applied to the functional layer of OLED devices by vacuum evaporation deposition. CEM is a metal electrode auxiliary material that is deposited by vacuum evaporation or sputtering to reduce the in-plane resistance of the OLED panel and increase the conductivity. A fine mask (FMM) is used to deposit the basic CPM material to form a pattern, and then an open mask is used to deposit the metal material for the cathode. This requires that the cathode patterning material (CPM) not only has a high transmittance but also can effectively inhibit the deposition of metal cathode materials (such as Mg / Ag) on the CPM material.

[0008] With the popularization of OLED full-screen displays, under-screen camera and under-screen fingerprint technologies have become the main technical challenges, which require the screen to have very high transmittance in the visible light and near-infrared light fields.

[0009] In order to continuously improve the performance of OLED screens, it is necessary not only to innovate in the OLED device structure and manufacturing process, but also to continuously research and innovate in OLED optoelectronic functional materials, and more importantly, to solve the technical problem of insufficient transmittance of under-screen cameras. Therefore, it is a long-term demand in this field to find a high-transmittance material that suppresses metal cathode materials (such as Mg / Ag) as a CPM layer for application in OLED screens to solve the above problems. Summary of the Invention

[0010] In view of the above problems existing in the prior art, the present application provides an organic compound containing a polyfluoro long chain, which can obtain a relatively high transmittance when used as a cathode patterning layer material.

[0011] The specific technical solution provided by the present invention is as follows: an organic compound containing a polyfluoro long chain, the organic compound having the structures shown in General Formula (1) and General Formula (2):

[0012]

[0013] In General Formula (2), X1, X2, and X3 each independently represent a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 represents a hydrogen atom;

[0014] In General Formula (1) and General Formula (2), A each independently represents a structure shown in Formula (2), Formula (3), or Formula (4);

[0015]

[0016] In General Formula (1) and General Formula (2), n = 3 or 6;

[0017] In General Formula (1) and General Formula (2), m = 1, 2, or 3;

[0018] In General Formula (1) and General Formula (2), Ar1 each independently represents a single bond,

[0019] L1 represents

[0020] i = 0 or 1; j = 0, 1, 2, 3, 4, 5, 6, 7, or 8; k = 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0021] When A represents Formula (2) and Ar1 represents a single bond, at this time i = 0, corresponding to L1 being

[0022] When A represents Formula (3), Ar1 represents

[0023] When A represents Formula (4), Ar1 represents

[0024] j + k ≥ 1; preferably ≥ 2; more preferably ≥ 3;

[0025] L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkoxy group, or a substituted or unsubstituted C1-C20 silyloxy group; L1 and L2 may be the same or different.

[0026] The substituent of the "substituted or unsubstituted" group is optionally selected from a fluorine atom.

[0027] In a preferred embodiment, the structure of the organic compound is represented by general formula (I-1), (I-3), (I-4), (I-5), (I-6), (I-8), (I-9) as follows:

[0028]

[0029] L1 is represented as

[0030] i = 0 or 1; j = 0, 1, 2, 3, 4, 5, 6, 7 or 8; k = 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10;

[0031] L2 represents a single bond, -O-, a substituted or unsubstituted C1-C20 alkylene group, a substituted or unsubstituted C1-C20 silylene group, a substituted or unsubstituted C1-C20 alkoxy group, or a substituted or unsubstituted C1-C20 silyloxy group;

[0032] L1 and L2 may be the same or different;

[0033] X1, X2, and X3 each independently represent a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 represents a hydrogen atom;

[0034] In general formula (I-3), (I-4), (I-8), and (I-9), q = 2 or 3.

[0035] In a preferred embodiment, the structure of the organic compound is represented by general formula (III-1), (III-2), (III-3), (III-4), (III-5) as follows:

[0036]

[0037] a1, b1, c4, d4, and e4 each independently represent 0, 1, 2, 3, 4, 5, 6, 7, or 8;

[0038] Each of a2, b2, c5, d5, and e5 independently represents 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0039] Each of c2 and d2 independently represents 0, 1, 2, 3, or 4;

[0040] Each of c1, c3, d1, d3, and e3 independently represents 0 or 1;

[0041] q independently represents 2 or 3;

[0042] Preferably, a1 + a2 ≥ 2; b1 + b2 ≥ 2; c2 + c4 + c5 ≥ 2; d2 + d4 + d5 ≥ 2; e2 + e4 + e5 ≥ 2;

[0043] Preferably, a1 + a2 ≥ 4; b1 + b2 ≥ 4; c2 + c4 + c5 ≥ 4; d2 + d4 + d5 ≥ 4; e2 + e4 + e5 ≥ 4.

[0044] In a preferred embodiment, the structure of the organic compound is as shown in General Formulas (IV-1), (IV-2), (IV-3), (IV-4), (IV-5), (IV-6),

[0045] (IV-7), and (IV-8):

[0046]

[0047] Each of c4, d4, and e4 independently represents 0, 1, 2, 3, 4, 5, 6, 7, or 8;

[0048] Each of c5, d5, and e5 independently represents 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10;

[0049] q independently represents 2 or 3.

[0050] In a preferred embodiment, each of L1 and L2 independently represents -O-, -O-CH2-, -O-(CH2)2-, -O-(CH2)3-, -O-(CH2)4-, -O-(CH2)5-, -O-(CH2)6-, -O(CH2)7-, -O(CH2)8-, -O(CH2)9-, -O(CH2) 10 -, -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -(CH2)7-, -(CH2)8-, -(CH2)9-, -(CH2) 10-, -CF2-, -(CF2)2-, -(CF2)3-, -(CF2)4-, -(CF2)5-, -(CF2)6-, -(CF2)7-, -(CF2)8-, -(CF2)9-, -(CF2) 10 -, -CH2CF2-, -CH2(CF2)2-, -CH2(CF2)3-, -CH2(CF2)4-, -CH2(CF2)5-, -CH2(CF2)6-, -CH2(CF2)7-, -CH2(CF2)8-, -CH2(CF2)9-, -CH2(CF2) 10 -, -(CH2)2CF2-, -(CH2)2(CF2)2-, -(CH2)2(CF2)3-, -(CH2)2(CF2)4-, -(CH2)2(CF2)5-, -(CH2)2(CF2)6-, -(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -(CH2)2(CF2)9-, -(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(CH2)3(CF2)6-, -(CH2)3(CF2)7-, -(CH2)3(CF2)8-, -(CH2)3(CF2)9-, -(CH2)3(CF2) 10 -, -(CH2)4CF2-, -(CH2)4(CF2)2-, -(CH2)4(CF2)3-, -(CH2)4(CF2)4-, -(CH2)4(CF2)5-, -(CH2)4(CF2)6-, -(CH2)4(CF2)7-, -(CH2)4(CF2)8-, -(CH2)4(CF2)9-, -(CH2)4(CF2) 10 -, -O-CF2-, -O-(CF2)2-, -O-(CF2)3-, -O-(CF2)4-, -O-(CF2)5-, -O-(CF2)6-, -O-(CF2)7-, -O-(CF2)8-, -O-(CF2)9-, -O-(CF2) 10 -, -O-CH2CF2-, -O-CH2(CF2)2-, -O-CH2(CF2)3-, -O-CH2(CF2)4-, -O-CH2(CF2)5-, -O-CH2(CF2)6-, -O-CH2(CF2)7-, -O-CH2(CF2)8-, -O-CH2(CF2)9-, -O-CH2(CF2) 10-, -O-(CH2)2CF2-, -O-(CH2)2(CF2)2-, -O-(CH2)2(CF2)3-, -O-(CH2)2(CF2)4-, -O-(CH2)2(CF2)5-, -O-(CH2)2(CF2)6-, -O-(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -O-(CH2)2(CF2)9-, -O-(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(CH2)3(CF2)6-, -O-(CH2)3(CF2)7-, -O-(CH2)3(CF2)8-, -O-(CH2)3(CF2)9-, -O-(CH2)3(CF2) 10 -, -O-(CH2)4CF2-, -O-(CH2)4(CF2)2-, -O-(CH2)4(CF2)3-, -O-(CH2)4(CF2)4-, -O-(CH2)4(CF2)5-, -O-(CH2)4(CF2)6-, -O-(CH2)4(CF2)7-, -O-(CH2)4(CF2)8-, -O-(CH2)4(CF2)9- or -O-(CH2)4(CF2) 10 -;; L2 may also represent a single bond; L1 and L2 may be the same or different.

[0051] In a preferred embodiment, the specific structural formula of the organic compound is any one of the following structures:

[0052]

[0053]

[0054]

[0055]

[0056]

[0057]

[0058]

[0059]

[0060]

[0061]

[0062]

[0063]

[0064]

[0065]

[0066]

[0067]

[0068]

[0069] Preferably, the structure of the organic compound is any one of the following general formula structures (VI-1) to (VI-7):

[0070]

[0071] Each Rf independently represents Rf-1 to Rf-330; the specific structures of Rf-1 to Rf-330 are as follows in the table:

[0072]

[0073]

[0074]

[0075]

[0076] Preferably, the specific structure of the organic compound is any one of Compound 251 to Compound 580:

[0077] wherein the structures of Compound 251 to Compound 580 refer to (in general formula VI-4), Rf respectively corresponds to Rf-1 to Rf-330;

[0078] The organic compound is preferably Compound 251 to Compound 272; Compound 427 to Compound 436.

[0079]

[0080]

[0081]

[0082] In a preferred embodiment, the transmittance of the organic compound at a wavelength of 400 nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%; the transmittance at a wavelength of 460 nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%; and the transmittance at a wavelength of 620 nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%.

[0083] The present invention also provides a multilayer film structure, which includes:

[0084] An organic functional layer, a cathode patterning layer, and a cathode layer;

[0085] The cathode patterning layer is located between the organic functional layer and the cathode layer;

[0086] The cathode patterning layer contains one or more of the organic compounds containing polyfluoro long chains.

[0087] In a preferred embodiment, the cathode layer is a metal material;

[0088] In a preferred embodiment, the cathode layer contains metal Mg and / or metal Ag; preferably a mixture of metal Mg and metal Ag.

[0089] In a preferred embodiment, the organic functional layer contains a hole-conducting film layer, a light-emitting layer, and an electron-conducting film layer, and the cathode patterning layer is located between the electron-conducting film layer and the cathode layer.

[0090] In a preferred embodiment, the electron-conducting film layer contains an electron transport layer;

[0091] In a preferred embodiment, the electron transport layer is an organic material containing an electron acceptor; preferably one of those containing triazine group, anthracene group, cyano group, pyrimidine group, pyridine group, pyridazine group, pyrazine group, benzimidazole group, benzoxazole group, benzothiazole group, quinoline group, isoquinoline group, quinoxaline group, isoquinoxaline group, or quinazoline group.

[0092] The electron transport layer material is a material that can easily receive electrons from the cathode and transfer the received electrons to the light-emitting layer. Preferably, it is a material with high electron mobility.

[0093] In a preferred embodiment, the electron transport layer is a co-evaporated material of an organic material containing an electron acceptor and Liq.

[0094] In a preferred embodiment, the transmittance of the multilayer film structure at a wavelength of 460 nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%; and the transmittance at a wavelength of 620 nm is greater than 90%, preferably greater than 95%, more preferably greater than 100%.

[0095] The present invention also provides an OLED optoelectronic device, which includes:

[0096] Substrate;

[0097] Anode layer, which is disposed on the substrate;

[0098] Organic functional layer, which is disposed on the anode layer;

[0099] Cathode patterning layer, which is disposed on the organic functional layer;

[0100] Cathode layer, which is disposed on the cathode patterning layer;

[0101] The cathode patterning layer contains one or more of the organic compounds containing a polyfluoro long chain.

[0102] The present invention also provides a full-color OLED display device, which comprises:

[0103] Substrate;

[0104] Anode, which is on the substrate; the anode is independently controlled by a TFT;

[0105] Organic functional layers of red, green, and blue OLED devices, which are on the anode; the organic functional layer sequentially includes a hole-conducting film layer region, a light-emitting layer region, and an electron-conducting film layer region from bottom to top;

[0106] Cathode patterning layer, which is prepared on the electron-conducting film layer based on a fine mask evaporation process;

[0107] Cathode; the cathode is prepared on the electron-conducting film layer and the cathode patterning layer based on an aperture mask evaporation process;

[0108] The cathode patterning layer, which is evaporated in a specific selected area of the OLED display device, contains one or more of the organic compounds containing a polyfluoro long chain.

[0109] The beneficial effects of the present invention are as follows:

[0110] The present application provides an organic compound containing a polyfluoro long chain, which can be deposited on the surface of the organic functional layer and inhibit the attachment and deposition of cathode metal materials when used as a cathode patterning layer material, and obtain a high transmittance.

[0111] The organic compound of the general formula (1) of the present invention has a high transmittance. The transmittance of the compound of the present invention within the wavelength range of 400 nm - 650 nm is 100%;

[0112] The molecular structure of the present invention has a large steric hindrance in space. By introducing a polyfluorinated long chain, the conjugated system of the molecular structure is broken, causing the absorption spectrum of the material to blue-shift, resulting in no absorption in the visible light range and increasing the transmittance of the material in the visible light region. An appropriate fluorine chain length can enable the material to maintain an appropriate evaporation temperature for evaporation coating, allowing for evaporation coating for a long time, expanding the industrial processing window, and improving the thermal stability of the material.

[0113] The compound of the present invention introduces at least six polyfluorinated chains to wrap the mother nucleus. Due to the exposed fluorinated long chains, the molecule has a spherical spatial configuration similar to that of the fluorine chain wrapping the mother nucleus, which is conducive to forming a lower surface tension. After the compound of the present invention is used as a CPM material and then evaporated with Mg and Ag, it still has a transmittance of more than 90% at wavelengths greater than 460 nm, which can effectively inhibit the attachment and deposition of Mg and Ag, achieving selective deposition of the Mg and Ag co-evaporation coating, facilitating cathode patterning applications, and increasing the transmittance of the under-screen camera of the OLED screen. Specific Embodiments

[0114] The present invention will be specifically described below in conjunction with the embodiments.

[0115] In the present invention, when a layer or element is referred to as being "above" another layer or substrate, the layer or element may be directly above the other layer or substrate, or there may also be an intermediate layer. In addition, it will also be understood that when a layer is referred to as being "between" two layers, the layer may be the only layer between the two layers, or there may also be one or more intermediate layers.

[0116] In the present invention, the orientation terms such as "above", "below", "top", and "bottom" are only used to represent the orientation in a specific state, and do not mean that the relevant structure can only exist in the described orientation; on the contrary, if the structure can be transformed in position, such as being inverted, the orientation of the structure will be changed accordingly. Specifically, in the present invention, the "bottom" and "lower" sides of the electrode refer to the side of the electrode close to the substrate during the preparation process, and the opposite side away from the substrate is the "top" and "upper" sides.

[0117] I. Preparation of the Compound of the Present Invention

[0118] Synthesis Example 1: Synthesis of Compound 16:

[0119]

[0120] 1) Under nitrogen protection, in a 250 ml round-bottom flask, successively add raw material A1 (0.35 g, 1 mmol), triethylamine (0.73 g, 1 ml, 7.2 mmol), 1,4-dioxane (100 ml), raw material B1 (3.33 g, 7.2 mmol), stir and mix. After purging air with nitrogen for 30 min, add AlCl3 (0.013 g, 0.1 mmol). React at room temperature for 24 h. After the reaction is completed, a solid precipitates. Slowly cool the reaction mixture to room temperature and filter. Wash the crude cake with 1,4-dioxane (100 ml) once and with water (200 ml) twice, and then dry to constant weight at 80 °C under vacuum to obtain compound 16. Elemental analysis structure (molecular formula C 60 H 12 F 102 N3O6P3): Theoretical values: C, 24.84; H, 0.42; F, 66.79; N, 1.45; P, 3.20; Measured values: C, 24.85; H, 0.45; F, 66.76; N, 1.48; P, 3.24. MALDI-TOF (m / z) measured value: 2900.96;

[0121] Synthesis Example 2: Synthesis of compound 75:

[0122]

[0123] 1) The preparation of intermediate B2 refers to the synthesis method in Science of Synthesis, 20a, 137 - 172; 2006.

[0124] 2) Under nitrogen protection, in a 500 ml round-bottom flask, successively add raw material A1 (0.35 g, 1 mmol), THF (100 ml), stir and mix. After purging air with nitrogen for 30 min, dropwise add the Grignard reagent solution (90 ml) of intermediate B2 (4.96 g, 9 mmol). After the addition is complete, heat the reaction system to reflux for 28 h. After the reaction is completed, a solid precipitates. Slowly cool the reaction mixture to room temperature, slowly add water (100 ml) to quench the excess Grignard reagent, remove THF under reduced pressure, and filter. Wash the crude cake with n-hexane (100 ml) once, with ethanol (100 ml) once, and with water (200 ml) twice, and then dry to constant weight at 80 °C under vacuum to obtain compound 75. Elemental analysis structure (molecular formula C 60 H 24 F 102Theoretical values of N3P3): C, 25.58; H, 0.86; F, 68.78; N, 1.49; P, 3.30; Test values: C, 25.54; H, 0.85; F, 68.73; N, 1.50; P, 3.38. MALDI-TOF (m / z) test value: 2816.92.

[0125] Synthesis Example 3: Synthesis of Compound 81:

[0126]

[0127] 1) The preparation of Intermediate C1 refers to the synthesis method of Structure 55 in Journal of Fluorine Chemistry 108 (2001) 95 - 109.

[0128] 2) Under nitrogen protection, in a 500 ml round-bottom flask, successively add Intermediate C1 (4.72 g, 5 mmol), NaH (0.48 g, 20 mmol), THF (100 ml), stir and mix for 10 min. After purging air with nitrogen for 30 min, add raw material A1 in three portions, each time adding raw material A1 (0.10 g, 0.3 mmol). Stir the reaction mixture at room temperature for 12 h, then quench the excess NaH by slowly adding anhydrous ethanol. After no NaH residue remains, add water (150 ml), and a solid precipitates. Filter. Wash the filter cake twice with water (200 ml), and then dry it under vacuum at 80 °C to constant weight to obtain Compound 81. Elemental analysis structure (molecular formula C 138 H 30 F 204 N3O6P3) Theoretical values: C, 28.61; H, 0.52; F, 66.89; N, 0.73; P, 1.60; Test values: C, 28.63; H, 0.55; F, 66.85; N, 0.71; P, 1.64. MALDI-TOF (m / z) test value: 5792.72.

[0129] Synthesis Example 4: Synthesis of Compound 135:

[0130]

[0131] 1) The preparation of Intermediate D1 refers to the synthesis method of Structure 1b-C8F17 in Nature Communications (2019), 10, (1), 1 - 6.

[0132] 2) Under nitrogen protection, in a 500 ml round-bottom flask, successively add raw material A2 (0.31 g, 1 mmol), intermediate D1 (3.74 g, 3.6 mmol), 1,4-dioxane (300 ml), CsF (0.91 g, 6 mmol), stir for 10 min, and add an orange catalyst solution prepared by dissolving Pd(dba)2 (0.029 g, 0.05 mmol) and triphenylphosphine (0.031 g, 0.12 mmol) in 1,4-dioxane (10 ml) and stirring evenly. Heat the reaction mixture to 100 °C and stir for 48 h. Take the reaction solution for TLC detection and find that raw material A2 has completely reacted. After the reaction is completed, naturally cool the reaction system to room temperature, remove the solvent under reduced pressure. Add water (100 ml) to the residue to precipitate solids, filter, wash the filter cake with water (2 * 100 mL), wash with methanol (2 * 100 mL), and then dry in vacuo at 80 °C to constant weight to obtain compound 135. Elemental analysis structure (molecular formula C 72 H 12 F 102 ) Theoretical values: C, 30.72; H, 0.43; F, 68.85;; Test values: C, 30.74; H, 0.45; F, 68.82. MALDI-TOF (m / z) test value: 2813.88.

[0133] Synthesis Example 5: Synthesis of Compound 195:

[0134]

[0135] 1) The preparation of intermediate E1 refers to the synthesis method of Structure 3(3,4) in Journal of Combinatorial Chemistry, 6(3), 363 - 374; 2004.

[0136] 2) Under nitrogen protection, in a 500 ml round-bottom flask, successively add raw material A3 (0.74 g, 1 mmol), diethyl ether (100 ml), stir for 10 min, then cool the reaction system to -78 °C, add a 1.6 mol / L n-butyllithium hexane solution (8 mmol, 5 ml), keep stirring at -78 °C for 2 h, add a mixed solution of intermediate E1 (6.79 g, 8 mmol) dissolved in diethyl ether (100 ml), and then warm the reaction mixture to room temperature and stir for 60 h. Take the reaction solution for TLC detection and find that raw material A3 has completely reacted. After the reaction is completed, naturally cool the reaction system to room temperature, remove the solvent under reduced pressure. Add water (100 ml) to the residue to precipitate solids, filter, wash the filter cake with water (2 * 100 mL), wash with methanol (2 * 100 mL), and then dry in vacuo at 80 °C to constant weight to obtain compound 195. Elemental analysis structure (molecular formula C 126 H81 F 162 Theoretical values of F[Si6]: C, 31.06; H, 1.68; F, 63.17; P, 0.64; Measured values: C, 31.05; H, 1.65; F, 63.18; P, 0.68. MALDI-TOF (m / z) measured value: 4870.24.

[0137] Synthesis Example 6: Synthesis of Compound 265:

[0138]

[0139] 1) Under nitrogen protection, in a 1000 ml round-bottom flask covered with aluminum foil to avoid light, successively add raw material A5 (4.72 g, 20 mmol), raw material B5 (23.85 g, 44 mmol), DMSO (400 ml), stir and mix for 10 min. After purging air with nitrogen for 30 min, add copper powder (6.35 g, 100 mmol). Heat the reaction mixture to reflux and stir the reaction under reflux conditions for 90 h. Take the reaction solution for TLC detection and find that raw material A5 has completely reacted. After the reaction is completed, naturally cool the reaction system to room temperature, pour it into water (500 m) and stir for 30 minutes. After filtration, wash the filter cake with anhydrous ether (250 ml × 2). After liquid separation of the filtrate, extract the aqueous phase with ether (200 ml × 3). Combine the organic phases, add anhydrous sodium sulfate for drying, filter, and rotary evaporate to remove the solvent to obtain intermediate F1. Elemental analysis results (molecular formula C 24 H 10 F 32 ) Theoretical values: C, 31.81; H, 1.11; F, 67.08; Measured values: C, 31.87; H, 1.05; F, 67.04. MALDI-TOF (m / z) measured value: 906.33.

[0140] 3) Under nitrogen protection, in a 500 ml round-bottom flask, successively add intermediate F1 (9.06 g, 10 mmol), bis(pinacolato)diboron (3.05 g, 12 mmol), heptane (300 ml). After purging air with nitrogen for 30 min, slowly add a catalyst suspension prepared by dissolving [Ir(OE)2Cl]2 (CAS: 12246-51-4) (0.045 g, 0.05 mmol) and 4,4'-di-tert-butyl-2,2'-bipyridine (0.027 g, 0.1 mmol) in 8 mL of heptane and stirring evenly. Heat the reaction system to reflux and stir the reaction under reflux conditions for 15 h. After the reaction is completed, cool the reaction mixture to room temperature, pour it into water (400 m) and stir for 10 minutes. After liquid separation, extract the organic phase with brine (2 × 200 mL). Combine the organic phases and dry with anhydrous sodium sulfate. Remove the solvent by rotary evaporation under reduced pressure to obtain intermediate G1. Elemental analysis results (molecular formula C30 H 21 BF 32 O2) Theoretical values: C, 34.91; H, 2.05; F, 58.90; Test values: C, 34.96; H, 2.00; F, 58.98. MALDI-TOF (m / z) test value: 1032.42.

[0141] 3) Under nitrogen protection, in a 500 ml round-bottom flask, successively add raw material A2 (0.31 g, 1 mmol), intermediate G1 (3.72 g, 3.6 mmol), 1,4-dioxane (300 ml), CsF (0.91 g, 6 mmol), stir for 15 min, and add a catalyst solution prepared by dissolving Pd(dba)2 (0.029 g, 0.05 mmol) and triphenylphosphine (0.031 g, 0.12 mmol) in 1,4-dioxane (10 ml) and stirring evenly. Heat the reaction mixture to reflux and stir the reaction under reflux conditions for 55 h. Take the reaction solution for TLC detection and find that raw material A2 has completely reacted. After the reaction is completed, naturally cool the reaction system to room temperature, remove the solvent under reduced pressure, add water (100 ml) to the residue to precipitate solids, filter, wash the filter cake with water (2 * 100 mL), wash with methanol (2 * 100 mL), and then dry in vacuo at 80 °C to constant weight to obtain compound 265. Elemental analysis structure (molecular formula C 78 H 30 F 96 ) Theoretical values: C, 33.57; H, 1.08; F, 65.35; Test values: C, 33.55; H, 1.14; F, 65.30. MALDI-TOF (m / z) test value: 2790.34.

[0142] II Determination of the optical properties of the compound

[0143] On a glass substrate, through a vacuum evaporation device, under a vacuum of 1.0E -5 Pa pressure, evaporate a single film of the compound of the present invention with a film thickness of 70 nm; immediately test the transmittance of the film after evaporation.

[0144] Table 1

[0145]

[0146] From the data in Table 1 above, it can be seen that the transmittance of the compound of the present invention at wavelengths greater than 400 nm is greater than 95%.

[0147] III Multilayer film structure

[0148] The following multilayer film structure is used to further illustrate the technical effect of the compound of the present invention as a cathode patterning material for suppressing the deposition of Mg:Ag.

[0149] 1. Materials, equipment, and test methods used in the examples

[0150] Materials:

[0151] Synthesize five compounds in the synthesis examples and the following five comparative compound examples.

[0152]

[0153] Equipment:

[0154] Vacuum evaporation coating device: Changzhou Industry, Japan, 200*200mm evaporation coating equipment

[0155] Test methods

[0156] Transmittance: Tested using a double-beam ultraviolet-visible spectrophotometer (Beijing Purkinje General Instrument Co., Ltd., model: TU-1901).

[0157] 2. Multilayer film structure implementation

[0158] In the present invention, a multilayer film structure was evaporated for transmittance measurement, and visually observed whether Mg; Ag coatings were deposited on the single film of the CPM material.

[0159] By depositing two CPM material coatings with a thickness of about 10 nm on a glass substrate, and then selecting one CPM material coating to withstand the Mg:Ag mixed evaporation vapor flux until a reference layer film thickness of 15 nm was obtained. Then, visually analyze the multilayer film structure before and after evaporating the Mg; Ag coatings, and measure the transmittance of the multilayer film structure after evaporating Mg; Ag compared to the multilayer film structure without evaporating Mg; Ag.

[0160] By depositing two electron conduction film layers on a glass substrate, then continuing to deposit two CPM material coatings with a thickness of about 10 nm, and then selecting one CPM material coating-containing layer to withstand the Mg:Ag mixed evaporation vapor flux until a reference layer film thickness of 15 nm was obtained. Then, visually analyze the multilayer film structure before and after evaporating the Mg; Ag coatings, and measure the transmittance of the multilayer film structure after evaporating Mg; Ag compared to the multilayer film structure without evaporating Mg; Ag.

[0161] In the embodiments described herein, the reference layer film thickness refers to the film thickness of Mg:Ag (1:9) deposited on the reference surface. The reference surface refers to the surface of the crystal oscillator located within the evaporation equipment, which is used to monitor the evaporation rate and the reference layer film thickness. That is, the reference layer film thickness does not represent the actual film thickness of the co-evaporation of Mg:Ag (1:9) deposited on the surface of the single-layer film coating of the CPM material. Instead, the reference layer film thickness refers to the coating film thickness of the co-evaporation of Mg:Ag (1:9) co-deposited on the surface of the crystal oscillator when the surface of the single-layer film coating of the CPM material and the surface of the crystal oscillator are subjected to the same vapor flux of the co-evaporation of Mg:Ag (1:9) during the same evaporation process period.

[0162] 3. Embodiments of the multi-layer film structure

[0163] Structure of embodiment M of the multi-layer film structure: Glass / CPM (10nm);

[0164] Structure of embodiment N of the multi-layer film structure: Glass / CPM (10nm) / Mg:Ag = 1:9 (15nm)

[0165] Place the CPM material in one evaporation source of the organic chamber in the vacuum evaporation device, and place Mg and Ag in two evaporation sources in the metal chamber of the vacuum evaporation device respectively;

[0166] Manufacturing method of embodiment M: On two glass substrates (Glass), through the vacuum evaporation device, under a vacuum of 1.0E -5 Pa pressure, control the evaporation rate of the CPM material to be Evaporate for 100 s to obtain a single-layer film of the CPM material with a film thickness of 10 nm, and obtain two film structures Glass / CPM (10nm);

[0167] Manufacturing method of embodiment N: On one film structure Glass / CPM (10nm) obtained in embodiment M; continue under a vacuum of 1.0E -5 Pa pressure, control the evaporation rate of Mg to be Control the evaporation rate of Ag to be Co-evaporate for 100 s to obtain a Mg:Ag (1:9) coating with a crystal oscillator film thickness of 15 nm;

[0168] The structures and manufacturing methods of embodiments M-1, M-2, M-3, M-4, M-5, M-6 of the multi-layer film structure are similar to those of embodiment M, except that compounds 16, 75, 81, 135, 195, 265 of the present invention are used as the CPM material respectively;

[0169] The structures and fabrication methods of the multilayer film structure comparative examples M-01, M-02, M-03, M-04, and M-05 are similar to those of Example M, except that comparative compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as the CPM materials, respectively;

[0170] The structures and fabrication methods of the multilayer film structure Examples N-1, N-2, N-3, N-4, N-5, and N-6 are similar to those of Example N, except that the compounds 16, 75, 81, 135, 195, and 265 of the present invention are used as the CPM materials, respectively;

[0171] The structures and fabrication methods of the multilayer film structure comparative examples N-01, N-02, N-03, N-04, and N-05 are similar to those of Example N, except that the compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 of the present invention are used as the CPM materials, respectively;

[0172] The structure and fabrication method of the multilayer film structure comparative example N-06 are similar to those of Example N, except that no CPM material is used, and a Mg:Ag (1:9) coating is directly evaporated on the glass substrate;

[0173] After the multilayer film structure examples were prepared, a UV-visible spectrophotometer was used to measure the transmittance of Example N with reference to Example M (i.e., the coated layer after evaporating Mg:Ag was referenced to the uncoated layer of Mg:Ag) to determine the relative amount of Mg:Ag deposited on the surface of the CPM film layer. Table 2 summarizes the transmittance measurement values of different CPM materials in the multilayer film structure Examples N with reference to Example M and the comparative examples after evaporating Mg:Ag at wavelengths of 460 nm and 620 nm.

[0174] Table 2

[0175]

[0176]

[0177] The transmittance of the publicly known structures CPM01, CPM02, CPM-03, CPM-04, and CPM-05, whether Mg:Ag can be deposited, and the transmittance performance after depositing Mg:Ag are not disclosed in the published literature.

[0178] The data in Table 2 show that, compared with the comparative compound CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05, using the compounds 16, 75, 81, 135, 195, and 265 of the present invention as CPM to prepare the multi-layer film examples has a relatively high transmittance of more than 90%, and the transmittance is increased by more than 20%. Compared with the pure film layer of Mg:Ag(1:9) with a film thickness of 15 nm directly evaporated on a glass substrate without CPM material, the transmittance of the multi-layer film example N prepared using the compound of the present invention as the CPM material is increased by more than 77%. The high optical transmittance indicates that there is a relatively small amount of Mg:Ag coating on the surface of the compound film layer of the present invention, and some even have basically no Mg:Ag deposition. Therefore, the compound of the present invention can effectively inhibit the deposition of Mg and Ag, realizing the selective deposition of the Mg and Ag co-evaporated coating, which is beneficial to the application of cathode patterning.

[0179] 4. Examples of multi-layer film structure

[0180] Structure of multi-layer film example U: Glass / ETL(30nm) / CPM(10nm);

[0181] Structure of multi-layer film example V: Glass / ETL(30nm) / CPM(10nm) / Mg:Ag = 1:9(15nm)

[0182] Place Liq, ETL material, and CPM material in different evaporation sources in the organic chamber of the vacuum evaporation device, and place Mg and Ag in two evaporation sources in the metal chamber of the vacuum evaporation device respectively;

[0183] Fabrication method of example U: On two glass substrates (Glass), through a vacuum evaporation device, at a vacuum degree of 1.0E -5 Pa pressure, evaporate the ETL film layer with a film thickness of 30 nm; control the evaporation rate of the CPM material to be Evaporate for 100 s to achieve a CPM film layer with a film thickness of 10 nm, and obtain two film structures Glass / ETL(30nm) / CPM(10nm);

[0184] Fabrication method of example V: On one film structure Glass / ETL(30nm) / CPM(10nm) obtained in example U; continue at a vacuum degree of 1.0E -5 Pa pressure, control the evaporation rate of Mg to be Control the evaporation rate of Ag to be Co-evaporate for 100 s to obtain a Mg:Ag(1:9) coating with a crystal oscillator film thickness of 15 nm;

[0185] The structures and manufacturing methods of the multi-layer film structure embodiments U-1, U-2, U-3, U-4, and U-5 are similar to those of embodiment U, except that

[0186] Compound 16, 75, 81, 135, and 195 of the present invention are respectively used as the CPM material; ET-1 is used as the ETL material;

[0187] The structures and manufacturing methods of the multi-layer film structure embodiments U6 to U-10, embodiments U-11 to U-15, and embodiments U-16 to U-20 are similar to those of embodiments U-1 to U-5, except that ET-2, ET-3, and ET-4 are respectively used as the ETL material;

[0188] The structures and manufacturing methods of the multi-layer film structure comparative examples U-01, U-02, U-03, U-04, and U-05 are similar to those of embodiment U, except that comparative compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are respectively used as the CPM material; ET-1 is used as the ETL material;

[0189] The structures and manufacturing methods of the multi-layer film structure comparative examples U-06 to U-010, comparative examples U-011 to U-015, and comparative examples U-016 to U-020 are similar to those of comparative examples U-01 to U-05, except that ET-2, ET-3, and ET-4 are respectively used as the ETL material;

[0190] The structures and manufacturing methods of the multi-layer film structure embodiments V-1, V-2, V-3, V-4, and V-5 are similar to those of embodiment V, except that compound 16, 75, 81, 135, and 195 of the present invention are respectively used as the CPM material; ET-1 is used as the ETL material;

[0191] The structures and manufacturing methods of the multi-layer film structure embodiments V-6 to V-10, embodiments V-11 to V-15, and embodiments V-16 to V-20 are similar to those of embodiments V-1 to V-5, except that ET-2, ET-3, and ET-4 are respectively used as the ETL material;

[0192] The structure and manufacturing method of the multi-layer film structure embodiment V-21 are similar to those of embodiment V-1, except that compound 265 of the present invention is used to replace compound 16 as the CPM material; the structure and manufacturing method of the multi-layer film structure embodiment U-21 are similar to those of embodiment U-1, except that compound 265 of the present invention is used to replace compound 16 as the CPM material;

[0193] The structures and fabrication methods of multi-layer film structure Examples V-22, V-23, and V-24 are similar to those of Example V-21, except that ET-2, ET-3, and ET-4 are used to replace ET-1 as the ETL material, respectively; the structures and fabrication methods of multi-layer film structure Examples U-22, U-23, and U-24 are similar to those of Example U-21, except that ET-2, ET-3, and ET-4 are used to replace ET-1 as the ETL material, respectively;

[0194] The structures and fabrication methods of multi-layer film structure Comparative Examples V-01, V-02, V-03, V-04, and V-05 are similar to those of Example V, except that the compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 of the present invention are used as the CPM material, respectively; ET-1 is used as the ETL material;

[0195] The structures and fabrication methods of multi-layer film structure Examples V-06 to V-010, Examples V-011 to V-015, and Examples V-016 to V-020 are similar to those of Examples V-01 to V-05, except that ET-2, ET-3, and ET-4 are used as the ETL material, respectively;

[0196] After the multi-layer film structure Examples are prepared, a UV-visible spectrophotometer is used to measure the transmittance of Example V with reference to Example U (i.e., the coated layer after evaporating Mg:Ag is referenced to the uncoated layer without evaporating Mg:Ag) to determine the relative amount of Mg:Ag deposited on the surface of the Glass / ETL(30nm) / CPM(10nm) film layer. Table 3 summarizes the measured transmittance values of multi-layer film structure Examples V with reference to Example U and their Comparative Examples after depositing different CPM materials on the ETL film layer and then continuing to evaporate Mg:Ag at wavelengths of 460 nm and 620 nm.

[0197] Table 3

[0198]

[0199]

[0200]

[0201] The data in Table 3 show that the CPM material of the present invention can be deposited on the ETL film layer of a single ET material, and Mg:Ag can be deposited on the CPM material; compared with the comparative compound CPM-01, CPM-02, CPM-03, CPM-04, CPM-05, the use of the compounds 16, 75, 81, 135, 195, 265 of the present invention as the CPM material to prepare the multi-layer film examples has a relatively high transmittance of more than 90% at wavelengths from 460 nm to 620 nm, and the transmittance is increased by more than 20%. The high optical transmittance indicates that there is a relatively small amount of Mg:Ag coating on the surface of the Glass / ETL(30nm) / CPM(10nm) multi-layer film, and some even have basically no Mg:Ag deposition. Therefore, the compounds of the present invention can effectively inhibit the deposition of Mg and Ag, realizing the selective deposition of the Mg and Ag co-evaporation coating, which is beneficial to the application of cathode patterning.

[0202] 5. Examples of multi-layer film structure

[0203] Structure of Example P of multi-layer film structure: Glass / ET:Liq = 1:1(30nm) / CPM(10nm);

[0204] Structure of Example Q of multi-layer film structure: Glass / ET:Liq = 1:1(30nm) / CPM(10nm) / Mg:Ag = 1:9(15nm)

[0205] Place the Liq, ET material, and CPM material in different evaporation sources in the organic chamber of the vacuum evaporation device, and place Mg and Ag in two evaporation sources in the metal chamber of the vacuum evaporation device respectively;

[0206] Manufacturing method of Example P: On two glass substrates (Glass), through a vacuum evaporation device, at a vacuum of 1.0E -5 Pa pressure, co-evaporate the ET-material and Liq, with the mass ratio of ET and Liq being 1:1, to form an ETL film layer with a film thickness of 30 nm; on the ETL film layer, control the evaporation rate of the CPM material to be Evaporate for 100 s to achieve a CPM film layer with a film thickness of 10 nm, obtaining two film structures Glass / ET:Liq = 1:1(30nm) / CPM(10nm);

[0207] Manufacturing method of Example Q: On one of the film structures Glass / ET:Liq = 1:1(30nm) / CPM(10nm) obtained in Example P; continue at a vacuum of 1.0E -5 Pa pressure, control the evaporation rate of Mg to be Control the evaporation rate of Ag to be Co-steam distillation for 100 s to obtain a Mg:Ag(1:9) coating with a crystal oscillator film thickness of 15 nm;

[0208] The structures and manufacturing methods of the multi-layer film structure Examples P-1, P-2, P-3, P-4, and P-5 are similar to those of Example P, except that Compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials respectively; ET-1 replaces ET;

[0209] The structures and manufacturing methods of the multi-layer film structure Examples P6 to P-10, Examples P-11 to P-15, and Examples P-16 to P-20 are similar to those of Examples P-1 to P-5, except that ET-2, ET-3, and ET-4 are used to replace ET1 respectively;

[0210] The structures and manufacturing methods of the multi-layer film structure Comparative Examples P-01, P-02, P-03, P-04, and P-05 are similar to those of Example P, except that Comparative Compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 are used as CPM materials respectively; ET-1 replaces ET;

[0211] The structures and manufacturing methods of the multi-layer film structure Comparative Examples P-06 to P-010, Comparative Examples P-011 to P-015, and Comparative Examples P-016 to P-020 are similar to those of Comparative Examples P-01 to P-05, except that ET-2, ET-3, and ET-4 are used to replace ET1 respectively;

[0212] The structures and manufacturing methods of the multi-layer film structure Examples Q-1, Q-2, Q-3, Q-4, and Q-5 are similar to those of Example Q, except that

[0213] Compounds 16, 75, 81, 135, and 195 of the present invention are used as CPM materials respectively; ET-1 replaces ET;

[0214] The structures and manufacturing methods of the multi-layer film structure Examples Q-6 to Q-10, Examples Q-11 to Q-15, and Examples Q-16 to Q-20 are similar to those of Examples Q-1 to Q-5, except that ET-2, ET-3, and ET-4 are used to replace ET1 respectively;

[0215] The structure and manufacturing method of the multi-layer film structure Example P-21 are similar to those of Example P-1, except that Compound 265 of the present invention is used to replace Compound 16 as the CPM material; the structure and manufacturing method of the multi-layer film structure Example Q-21 are similar to those of Example Q-1, except that Compound 265 of the present invention is used to replace Compound 16 as the CPM material;

[0216] The structures and manufacturing methods of the multi-layer film structure Examples P-22, P-23, and P-24 are similar to those of Example P-21, except that ET-2, ET-3, and ET-4 are respectively used to replace ET-1 as the ETL material; the structures and manufacturing methods of the multi-layer film structure Examples Q-22, Q-23, and Q-24 are similar to those of Example Q-21, except that ET-2, ET-3, and ET-4 are respectively used to replace ET-1 as the ETL material;

[0217] The structures and manufacturing methods of the multi-layer film structure Comparative Examples Q-01, Q-02, Q-03, Q-04, and Q-05 are similar to those of Example Q, except that the compounds CPM-01, CPM-02, CPM-03, CPM-04, and CPM-05 of the present invention are respectively used as the CPM material; ET-1 replaces ET;

[0218] The structures and manufacturing methods of the multi-layer film structure Examples Q-06 to Q-010, Examples Q-011 to Q-015, and Examples Q-016 to Q-020 are similar to those of Examples Q-01 to Q-05, except that ET-2, ET-3, and ET-4 are respectively used to replace ET-1;

[0219] Table 4 summarizes the measured transmittance values of the multi-layer film structure Example Q, the Reference Example P, and their Comparative Examples at wavelengths of 460 nm and 620 nm after depositing different CPM materials on the co-evaporated ET:Liq film layer and then co-evaporating Mg:Ag.

[0220] Table 4

[0221]

[0222]

[0223]

[0224] The data in Table 4 show that the CPM compound of the present invention can be deposited on the Glass / ET:Liq = 1:1 (30 nm) film layer, and Mg:Ag can be deposited on the CPM material; compared with the comparative compound CPM-01, CPM-02, CPM-03, CPM-04, CPM-05, the use of the compounds 16, 75, 81, 135, 195, 265 of the present invention as the CPM material to prepare the multi-layer film examples have a relatively high transmittance of more than 90% at a wavelength of 460 nm to 620 nm, and the transmittance is increased by more than 20%. The high optical transmittance indicates that there is a relatively small amount of Mg:Ag coating on the surface of the Glass / ET:Liq = 1:1 (30 nm) / CPM (10 nm) multi-layer film, and some even have basically no Mg:Ag deposition. Therefore, the compound of the present invention can effectively inhibit the deposition of Mg and Ag, realizing the selective deposition of the Mg and Ag co-evaporation coating, which is beneficial to the cathode patterning application.

[0225] Therefore, whether on the glass substrate, or on the single ET material film layer substrate or (ET and Liq co-evaporation film layer substrate), the CPM compound of the present invention can be deposited into a uniform and flat film, and only a small amount or basically no Mg:Ag is deposited on the CPM film layer. Therefore, the compound of the present invention can effectively inhibit the deposition of Mg and Ag, realizing the selective deposition of the Mg and Ag co-evaporation coating, which is beneficial to the cathode patterning application, is conducive to obtaining a higher transmittance in the OLED display, can be applied to the technical direction of the OLED under-screen camera, and is beneficial to improving the transmittance of the OLED under-screen camera.

[0226] In summary, the above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. Application of an organic compound containing a polyfluoro long chain, characterized in that, Applied to the cathode patterning layer, the organic compound has the structures shown in General Formula (1) and General Formula (2): In General Formula (2), X1, X2, and X3 each independently represent a fluorine atom or a hydrogen atom; at least one of X1, X2, and X3 represents a hydrogen atom; In General Formula (1) and General Formula (2), A each independently represents the structure shown in Formula (4); In General Formula (1) and General Formula (2), n = 6; In General Formula (1) and General Formula (2), m = 3; In General Formula (1) and General Formula (2), Ar1 represents L1 is represented as i = 0; j = 0, 1, 2, 3, or 4; k = 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; j + k ≥ 1.

2. The application of the organic compound containing a polyfluoro long chain according to claim 1, wherein Said j + k ≥ 2.

3. Use of the organic compound containing a polyfluoro long chain according to claim 1, characterized in that Said j + k ≥ 3.

4. Use of the organic compound containing a polyfluoro long chain according to claim 1, characterized in that, The structure of the organic compound is shown in General Formula (I-5): L1 is represented as i = 0; j = 0, 1, 2, 3, or 4; k = 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10.

5. Use of the organic compound containing a polyfluoro long chain according to claim 1, characterized in that, The structure of the organic compound is shown in General Formula (III-5): Said e4 represents 0, 1, 2, 3, or 4; Said e5 represents 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; Said e3 represents 0.

6. The application of the organic compound containing a polyfluoro long chain according to claim 5, wherein, Said e3 + e4 + e5 ≥ 2.

7. Use of the organic compound containing a polyfluoro long chain according to claim 5, characterized in that, Said e3 + e4 + e5 ≥ 4.

8. The application of the organic compound containing a polyfluoro long chain according to claim 1, characterized in that, L1 represents -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -CF2-, -(CF2)2-, -(CF2)3-, -(CF2)4-, -(CF2)5-, -(CF2)6-, -(CF2)7-, -(CF2)8-, -(CF2)9-, -(CF2) 10 -, -CH2CF2-, -CH2(CF2)2-, -CH2(CF2)3-, -CH2(CF2)4-, -CH2(CF2)5-, -CH2(CF2)6-, -CH2(CF2)7-, -CH2(CF2)8-, -CH2(CF2)9-, -CH2(CF2) 10 -, -(CH2)2CF2-, -(CH2)2(CF2)2-, -(CH2)2(CF2)3-, -(CH2)2(CF2)4-, -(CH2)2(CF2)5-, -(CH2)2(CF2)6-, -(CH2)2(CF2)7-, -(CH2)2(CF2)8-, -(CH2)2(CF2)9-, -(CH2)2(CF2) 10 -, -(CH2)3CF2-, -(CH2)3(CF2)2-, -(CH2)3(CF2)3-, -(CH2)3(CF2)4-, -(CH2)3(CF2)5-, -(CH2)3(CF2)6-, -(CH2)3(CF2)7-, -(CH2)3(CF2)8-, -(CH2)3(CF2)9-, -(CH2)3(CF2) 10 -, -(CH2)4CF2-, -(CH2)4(CF2)2-, -(CH2)4(CF2)3-, -(CH2)4(CF2)4-, -(CH2)4(CF2)5-, -(CH2)4(CF2)6-, -(CH2)4(CF2)7-, -(CH2)4(CF2)8-, -(CH2)4(CF2)9- or -(CH2)4(CF2) 10 -.

9. The application of the organic compound containing a polyfluoro long chain according to claim 1, characterized in that, The specific structural formula of the organic compound is any one of the following structures:

10. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 400 nm is greater than 90%; the transmittance at a wavelength of 460 nm is greater than 90%; the transmittance at a wavelength of 620 nm is greater than 90%.

11. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 400 nm is greater than 95%.

12. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 400 nm is greater than 100%.

13. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 460 nm is greater than 95%.

14. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 460 nm is greater than 100%.

15. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 620 nm is greater than 95%.

16. Use of the organic compound containing a polyfluoro long chain according to any one of claims 1-9, characterized in that, The transmittance of the organic compound at a wavelength of 620 nm is greater than 100%.

17. A multilayer film structure, which includes: An organic functional layer, a cathode patterning layer, and a cathode layer; The cathode patterning layer is located between the organic functional layer and the cathode layer; It is characterized in that the cathode patterning layer contains one or more of the organic compounds containing polyfluoro long chains described in any one of Claims 1-9.

18. An OLED optoelectronic device, which includes: A substrate; An anode layer, which is disposed on the substrate; An organic functional layer, which is disposed on the anode layer; A cathode patterning layer, which is disposed on the organic functional layer; A cathode layer, which is disposed on the cathode patterning layer; It is characterized in that The cathode patterning layer contains one or more of the organic compounds containing polyfluoro long chains described in any one of Claims 1-9.

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