Reaction byproduct capture device with self-regeneration of used internal capture tower

Abstract

The present invention relates to a reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower. The reaction byproduct capture device is installed between a process chamber and a vacuum pump or between a vacuum pump and a scrubber in a semiconductor manufacturing process. In order to capture and discharge reaction byproducts contained in exhaust gas discharged after a deposition process, the reaction byproduct capture device comprises a heater (2) for heating the exhaust gas flowing into an outer shell (1) and an internal capture tower (3) for capturing reactant products in the exhaust gas flowing into the inner shell. The reaction byproduct capture device comprises: a regeneration heater (4) installed in the internal capture tower (3) and removing the reaction byproducts through a heating reaction; thereby ensuring the internal and external space of the internal capture tower (3) and thereby realizing an additional capture reaction.

Description

Technical Field

[0001] The present invention relates to a reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower, and more particularly to a technology for removing reaction byproducts captured by the capture device during the capture operation process to regenerate the capture device into a state where it can be captured again, thereby extending the service life of the capture device. Background Art

[0002] Generally speaking, semiconductor manufacturing engineering generally includes fabrication engineering and assembly engineering. The fabrication engineering refers to the engineering of manufacturing semiconductor chips by repeatedly depositing thin films on wafers in various process chambers and then selectively etching the deposited thin films to produce specific patterns. The assembly engineering refers to the engineering of assembling finished products by separating the chips manufactured in the fabrication engineering individually and combining them with lead frames.

[0003] At this time, the above-mentioned process of depositing a thin film on the wafer or etching the thin film deposited on the wafer is performed under high temperature conditions by injecting the required gases such as precursor gases for performing thin film deposition into the process chamber through the gas injection system. At this time, a large amount of harmful gases containing various reaction by-products not used in the deposition process, unreacted flammable gases and corrosive foreign matter, and toxic components will be generated in the process chamber and discharged as exhaust gas.

[0004] To this end, in a semiconductor manufacturing device, a reaction byproduct capturing device is installed between the process chamber and a vacuum pump in order to capture the reaction byproducts contained in the exhaust gas discharged from the process chamber. After the reaction byproducts contained in the exhaust gas are captured, the unreacted gas is finally purified in a scrubber located at the rear end of the vacuum pump and discharged into the atmosphere.

[0005] Furthermore, when the reaction byproduct capture device is used to capture the reaction byproducts in the internal capture tower during the use period, the reaction byproduct capture process cannot be continued because the reaction byproducts are attached or deposited in the internal space of the housing or the capture plate of the internal capture tower. Therefore, in order to perform the semiconductor manufacturing process, it is necessary to replace the reaction byproduct capture device with a new one, or replace it with a capture device that is regenerated by washing the internal capture tower of the reaction byproduct capture device and the inside of the housing.

[0006] The replacement process of the capture device as described above may cause delays in the semiconductor manufacturing process or increase in manufacturing costs.

[0007] Therefore, a technology that can extend the service life of the capture device is needed, but there is no related technology so far.

[0008] Prior Art Literature

[0009] (Patent Document 1) Korean Patent Gazette Registration No. 10-0311145 (granted on September 24, 2001)

[0010] (Patent Document 2) Korean Patent Gazette Registration No. 10-0564272 (granted on March 20, 2006)

[0011] (Patent Document 3) Korean Patent Gazette Registration No. 10-0631924 (granted on September 27, 2006)

[0012] (Patent Document 4) Korean Patent Gazette Registration No. 10-2209205 (granted on January 25, 2021) Summary of the invention

[0013] The present invention aims to solve the existing problems as described above, and its purpose is to provide a reaction byproduct capture device located between a process chamber and a vacuum pump or between a vacuum pump and a scrubber in a semiconductor manufacturing process, which stops running and removes reaction byproducts generated in an internal capture tower by heating reaction when the capture device enters a reaction byproduct capture saturation state or reaches a dry cleaning cycle of the process chamber during the capture operation, thereby performing additional capture reactions by regenerating the internal capture tower.

[0014] In order to achieve the above-mentioned purpose and solve the existing problems, the present invention provides a reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower, which is installed between a process chamber and a vacuum pump or a vacuum pump and a scrubber in a semiconductor manufacturing process, in order to capture and discharge reaction byproducts contained in exhaust gas discharged after a deposition process, and includes a heater for heating the exhaust gas flowing into the interior of a housing and an internal capture tower for capturing reactant products in the exhaust gas flowing into the interior of the housing.

[0015] The invention comprises: a regeneration heater, which is installed in the internal capture tower and removes the reaction by-products through a heating reaction; thereby ensuring the internal and external space of the internal capture tower and realizing an additional capture reaction.

[0016] As a preferred embodiment, the present invention is characterized in that the regeneration heaters are alternately arranged in a zigzag shape in the internal capture tower to achieve heat conduction.

[0017] As a preferred embodiment, the present invention is characterized in that the regeneration heater includes: an outer regeneration heater installed in contact with or close to the outer side of the inner capture tower; and an inner regeneration heater installed in the inner space.

[0018] As a preferred embodiment, the present invention is characterized in that the outer regeneration heater is composed of one or more separate structures and surrounds the outside of the inner capture tower.

[0019] As a preferred embodiment, the present invention is characterized in that the inner regeneration heater is composed of one or more separate structures and surrounds the outside of the inner capture tower.

[0020] As a preferred embodiment, the present invention is characterized in that: the reaction byproduct capture device is used to capture reaction byproducts contained in the exhaust gas generated when the TiN deposition process is performed using TiCl4 and NH3 gases in the process chamber. The reaction byproducts in the exhaust gas are captured by using an internal capture tower to heat the internal space of the outer shell to a temperature range below 120°C, and then the regeneration heater is heated to above 400°C after the capture reaction is completed to remove the reaction byproducts inside and outside the internal capture tower through a regeneration operation, thereby ensuring additional capture reaction space.

[0021] As a preferred embodiment, the present invention is characterized in that: the internal capture tower includes: an upper end capture portion that performs a capture reaction while inducing the flow of exhaust gas distributed to the outer contour and descending through the heater to the central portion;

[0022] an intermediate capture section that performs a capture reaction while inducing the flow of the descending exhaust gas to the outer contour and removes reaction byproducts by installing a regeneration heater; and

[0023] The lower end trapping part guides the exhaust gas descending from the outer shell to the central gas discharge port while performing a trapping reaction.

[0024] As a preferred embodiment, the present invention is characterized in that: the upper end capture portion is constructed in the form of a flat plate and forms a main flow hole in the central portion, and a plurality of auxiliary flow holes are formed in a circular arrangement around the main flow hole. By arranging triangular plates for inducing exhaust gas flow and cross plates for generating vortices in a circular manner around the upper side surface and arranging quadrilateral plates in a circular manner on the lower side surface, the exhaust gas descending through the main flow hole and the auxiliary flow hole is induced to descend evenly.

[0025] As a preferred embodiment, the present invention is characterized in that: the upper end capture part is installed at a certain height from the middle capture part through a certain length of spacer material installed in the lower part and the support part.

[0026] As a preferred embodiment, the present invention is characterized in that: the intermediate capture portion is composed of a plurality of vertical capture plates arranged at a certain interval, a regeneration heater through hole for the regeneration heater to pass through is formed in the vertical capture plates, and a regeneration heater fixing portion is installed to connect adjacent vertical capture plates and fix the regeneration heater at the same time.

[0027] As a preferred embodiment, the present invention is characterized in that: the middle capture portion is provided with a vertical capture plate in the inner space which is relatively smaller than a plurality of vertical capture plates arranged at a certain interval along the periphery, thereby achieving heat conduction from the regeneration heater.

[0028] As a preferred embodiment, the present invention is characterized in that: the intermediate capture portion is composed of an outer capture plate portion with flow holes formed on the surface, an intermediate capture plate portion and an inner capture plate portion, and in order to prevent the exhaust gas from directly flowing into the gas exhaust port, the exhaust gas is blocked from flowing in from the top and the exhaust gas is guided from the outer contour to the inside while performing a capture reaction, and the entire load of the intermediate capture portion is supported in a propped-up state by being combined to a support frame installed on the lower plate of the outer shell.

[0029] As a preferred embodiment, the present invention is characterized in that: the outer contour capture plate portion is composed of a structure with an open lower portion, a plurality of flow holes are formed in the upper side capture plate and each side capture plate, and a plurality of vortex forming sheets are installed on the outside at an inclined angle.

[0030] As a preferred embodiment, the present invention is characterized in that: the middle capture plate portion is composed of a structure with an open lower portion, and is spaced a certain distance from the upper side surface of the outer contour capture plate portion through a spacer material, the upper side capture plate is composed of a closed structure and a plurality of flow holes are formed on each side capture plate.

[0031] As a preferred embodiment, the present invention is characterized in that: the inner capture plate portion is formed with a structure that is open at the lower part and the upper part and is fixed to the middle capture plate portion, and a plurality of flow holes are formed on each side capture plate.

[0032] By using the reaction byproduct capture device with the self-regeneration function of the used internal capture tower applicable to the present invention with the features as described above, when the capture device located between the process chamber and the vacuum pump or between the vacuum pump and the scrubber in the semiconductor manufacturing process enters the reaction byproduct capture saturation state or reaches the dry cleaning cycle of the process chamber during the capture operation, the operation is stopped and the reaction byproducts in the capture plate and the surrounding area of ​​the internal capture tower and the reaction byproducts generated in the internal space of the capture plate are removed by heating reaction, thereby regenerating the internal capture tower.

[0033] In addition, the present invention can regenerate the internal capture tower during its capture operation without the need for replacement, thereby enabling additional capture reactions in the internal capture tower. Therefore, the service life can be extended and the overall semiconductor manufacturing efficiency can be improved without performing a replacement or washing process on the reaction byproduct capture device, thereby reducing manufacturing costs.

[0034] As described above, the present invention is a useful invention having various effects and has good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a cross-sectional view showing the structure of a byproduct capture device equipped with a regeneration heater according to one embodiment of the present invention.

[0036] Figure 2 as well as Figure 3 This is a perspective view showing the interior of a byproduct capture device equipped with a regeneration heater according to an embodiment of the present invention.

[0037] Figure 4 This is a perspective view showing an internal capture tower equipped with a regeneration heater according to an embodiment of the present invention.

[0038] Figure 5 This is a perspective view showing an external regeneration heater installed on the outside of an internal capture tower according to an embodiment of the present invention.

[0039] Figure 6 This is a perspective view showing an inner regeneration heater installed inside an inner capture tower to which one embodiment of the present invention is applied.

[0040] Figure 7 The diagram is a schematic diagram illustrating the gas flow inside a reaction byproduct capture device according to one embodiment of the present invention.

[0041] Figure 8 The diagram is a schematic diagram illustrating the first capture tendency inside a reaction byproduct capture device according to one embodiment of the present invention.

[0042] Fig. 9 This is a schematic diagram illustrating a capture area within a reaction byproduct capture device secured by a regeneration process according to an embodiment of the present invention.

[0043] Fig.10 This is a schematic diagram illustrating a secondary capture tendency after an additional capture reaction in a reaction byproduct capture device according to an embodiment of the present invention.

[0044] (Explanation of Reference Numerals)

[0045] 1: Shell 2: Heater

[0046] 2a: Radiator 3: Internal capture tower

[0047] 4: Regeneration heater 10a: Eddy current forming sheet

[0048] 11: Shell body 12: Upper plate

[0049] 12a: Gas inlet 13a: Gas outlet

[0050] 13: Lower plate 21: Power supply unit

[0051] 31: Upper capture part 32: Middle capture part

[0052] 33: Lower end capture part 41: External regeneration heater

[0053] 42: Inner regeneration heater 301: Regeneration heater through hole

[0054] 302: Regeneration heater fixing part 311: Main flow hole

[0055] 312: auxiliary flow hole 313: triangular plate

[0056] 314: Cross plate 315: Quadrilateral plate

[0057] 316: Spacer material 317: Support part

[0058] 321: vertical capture plate 321a: lower horizontal plate

[0059] 321b: Flow hole 321c: Vertical capture plate

[0060] 321d: vertical capture plate 321e: vertical auxiliary capture plate

[0061] 331: Outer contour capture plate 331a: Eddy current forming sheet

[0062] 332: Intermediate capture plate 332a: Spacer material

[0063] 333: Inner capture plate 334: Support rod DETAILED DESCRIPTION

[0064] Next, the structure and function of the embodiments applicable to the present invention will be described in detail with reference to the accompanying drawings. In addition, in the process of describing the present invention, when it is determined that the specific description of the relevant known functions or structures may make the gist of the present invention unclear, the detailed description related thereto will be omitted.

[0065] Figure 1 This is a cross-sectional view illustrating the structure of a byproduct capture device equipped with a regeneration heater according to one embodiment of the present invention. Figure 2 as well as Figure 3 This is a perspective view showing the interior of a byproduct capture device equipped with a regeneration heater according to one embodiment of the present invention. Figure 3 This is a perspective view showing the interior of a byproduct capture device equipped with a regeneration heater according to one embodiment of the present invention. Figure 4 This is a perspective view showing an internal capture tower equipped with a regeneration heater according to an embodiment of the present invention. Figure 5 This is a perspective view showing an external regeneration heater installed on the outside of an internal capture tower to which one embodiment of the present invention is applied. Figure 6 This is a perspective view showing an inner regeneration heater installed inside an inner capture tower to which one embodiment of the present invention is applied.

[0066] As shown in the figure, a reaction byproduct capture device with a self-regeneration function of a used internal capture tower applicable to the present invention comprises: a shell 1, which is installed in a process chamber in a semiconductor manufacturing process and a vacuum pump or a dry cleaning cycle of the process chamber to capture and discharge reaction byproducts contained in the exhaust gas discharged after the deposition process; a heater 2, which is used to heat the exhaust gas flowing into the interior of the shell; an internal capture tower 3, which is used to capture reaction byproducts in the exhaust gas flowing into the interior of the shell; and a regeneration heater 4, which is installed in the internal capture tower and removes the reaction byproducts through a heating reaction.

[0067] The capture device applicable to the present invention and equipped with the regeneration heater 4 as described above will continuously perform the capture reaction during operation. When the reaction by-product capture reaction in the internal capture tower installed inside the capture device reaches a saturated state or reaches the process chamber dry cleaning cycle, the capture operation will be stopped and the internal capture tower will be heated through the regeneration operation to crush and remove the reaction by-products attached to the capture plates constituting the internal capture tower or deposited in the form of powder inside and outside the internal capture tower, thereby converting them into a state that can be captured again and thereby extending the service life of the capture device.

[0068] The housing 1 is of a vertical structure that allows exhaust gas discharged from a process chamber to a vacuum pump to flow in from the top and be received before being discharged to the bottom, and includes: a housing body 11 for receiving the gas that flows in; an upper plate 12 formed with a gas inlet 12a protruding in an upward direction; and a lower plate 13 protruding in an upward and lower direction and provided with gas exhaust ports 13a.

[0069] In one embodiment of the present invention, the shape of the housing body 11 is shown as a quadrilateral cylinder, but the present invention is not limited to the above-mentioned shape, and can also be formed in a desired shape such as a cylinder, a polygonal cylinder, etc. However, in the following content, for the convenience of explanation, the quadrilateral cylinder shape will be used as a reference for explanation.

[0070] Furthermore, a plurality of vortex forming sheets 10a for extending the residence time in the housing internal space by forming vortices in the exhaust gas passing through the interior of the housing 1 at regular intervals in the vertical direction may be included inside the housing body 11 .

[0071] At this time, the cross-sectional shape of the vortex forming sheet 10a can be formed in a horizontal flat plate shape, or in a shape with an inclined surface with one end of the inner side bent upward or downward, or in a rounded shape. The vortex forming sheet of the above-mentioned shape can form a load in the flow of the descending exhaust gas and form a vortex by the difference in direction and speed.

[0072] The gas outlet 13a may be formed with a plurality of vortex-forming sheets 13a' protruding around the upper portion of the lower plate 13. By forming the vortex-forming sheets 13a' as described above, a vortex may be formed in the flow of the exhaust gas flowing into the gas outlet, thereby maximizing the capture time before the exhaust gas is discharged and thereby improving the capture efficiency.

[0073] The heater 2 is a device for heating the exhaust gas flowing into the housing and uniformly distributing it. A radiator 2a is radially formed on the upper side so that the heated exhaust gas can be uniformly distributed.

[0074] Furthermore, a heater power supply unit 21 for supplying power to the heater 2 and controlling the power supply according to the temperature inside the housing is mounted on the upper plate 12 of the housing.

[0075] The internal capture tower 3 is composed of a plurality of metal capture plates, which can convert the flow path of the exhaust gas that flows into the interior of the outer shell and is reheated by the heater while lowering the temperature of the exhaust gas that is in contact with or close to the surface of the metal capture plate, thereby capturing the reaction by-products contained in the exhaust gas in the form of powder or film.

[0076] The internal capture tower may be of any shape as long as it is composed of a plurality of metal capture plates and can capture the reaction by-products in the exhaust gas.

[0077] However, in order to improve the heat transfer efficiency of the regeneration heater 4 for regenerating the internal capture tower 3, the present invention forms a regeneration heater through hole 301 and a regeneration heater fixing portion 302 in the capture plate to mount the regeneration heater.

[0078] By equipping the regeneration heater through hole 301 and the regeneration heater fixing portion 302 as described above, the regeneration heater can be evenly and alternately installed in the internal capture device in a zigzag pattern and play a heating role, thereby removing the reaction by-products and regenerating the internal capture device when the regeneration operation begins after the capture operation ends.

[0079] In a preferred embodiment of the present invention, the internal capture tower 3 includes: an upper capture section 31, which performs a capture reaction while inducing the flow of the exhaust gas distributed to the outer shell and descending through the heater to the central section; a middle capture section 32, which performs a capture reaction while inducing the flow of the descending exhaust gas to the outer shell, and removes reaction by-products by installing a regeneration heater 4; and a lower capture section 33, which performs a capture reaction while inducing the exhaust gas descending from the outer shell to the central gas outlet 13a.

[0080] The upper capture portion 31 is constructed in a flat plate shape, and the internal space at the upper end of the outer shell body is blocked to prevent the exhaust gas distributed to the outer contour and descending from the upper heater from directly descending to the lower part. Instead, the exhaust gas is guided to the main flow hole 311 in the central part to form a main flow, and at the same time, an auxiliary flow is formed by guiding a part of the exhaust gas to a plurality of auxiliary flow holes 312 arranged in a circle around the main flow hole 311, and a capture reaction is achieved in the process.

[0081] In addition, in order to improve the capture efficiency by inducing uniform flow of exhaust gas or forming vortex, the upper end capture part 31 induces uniform flow of exhaust gas by arranging vertically protruding triangular plates 313 around the upper side in a circular manner, forms vortex and delays the flow of exhaust gas by arranging vertically protruding cross-shaped plates 314 on the inner side in a circular manner, and induces uniform descent of exhaust gas that descends through the main flow hole 311 and the auxiliary flow hole 312 by arranging vertically protruding quadrilateral plates 315 on the lower side in a circular manner. In addition, vortex can be generated by forming vortex sheets on the triangular plates 313.

[0082] In addition, the upper end capturing part 31 is installed at a certain height from the middle capturing part 32 through a certain length of spacer material 316 installed at the lower part and a support part 317. In order to fix at least four or more spacer materials, the support part 317 is formed in a strip-shaped plate with a certain width along the upper end shape of the middle capturing part 32 and is formed with a plurality of holes, so that both sides are bolted or welded.

[0083] The middle capture portion 32 is composed of a plurality of vertical capture plates 321 arranged at a certain interval along the periphery of a quadrilateral, so as to capture reaction byproducts in the exhaust gas flowing from the upper end capture portion 31 to the central portion and then guide them to the outer contour.

[0084] Specifically, a plurality of vertical capture plates 321 are installed in the middle capture portion 32 at regular intervals along the periphery of the quadrilateral, and one or a small number of relatively small vertical capture plates are also installed in the inner space.

[0085] By adopting the shape as described above, the inner space portion of the middle capture portion 32 will accommodate the exhaust gas induced to descend from the top and contact or approach the upper surface of the individual vertical capture plates 321 arranged at a certain interval around it while flowing toward the lower surface, thereby capturing the reaction by-products contained in the exhaust gas and discharging it toward the outer contour.

[0086] At this time, the outer sides of the individual vertical capture plates 321 will also come into contact with or approach the exhaust gas descending from the auxiliary flow holes 312 of the upper capture portion 31 and capture the reaction by-products.

[0087] The exhaust gas induced from the inside of the intermediate capture section 32 to the outer contour direction will continue to flow into the exhaust gas from the upper end capture section 31 to the central part of the intermediate capture section 32, so the main flow will be mainly formed on the lower side in the flow of the descending exhaust gas.

[0088] As one embodiment, the vertical capture plate 321 can be symmetrically formed with vertical capture plates 321c having a relatively large vertical size at both ends of the lower horizontal plate 321a having a plurality of flow holes 321b formed at the lower end, or can be symmetrically formed with vertical capture plates 321 having a relatively large vertical size at both ends of the lower plate having a plurality of flow holes formed at the lower end and a vertical capture plate 321d having a relatively small vertical size formed in the central portion, and then embedded in a grid shape to form a quadrilateral cylindrical middle capture portion 32.

[0089] In addition, a vertical auxiliary capture plate 321e is formed in the relatively large vertical capture plate 321 formed on the outer contour, which intersects the surface perpendicularly and protrudes to both sides, thereby forming a cross-shaped cross section and thereby forming a larger capture cross section.

[0090] By forming the cross-shaped cross section as described above, not only the trapping area can be increased, but also a vortex can be formed in the flow of the exhaust gas to delay the flow of the exhaust gas, thereby increasing the trapping reaction time.

[0091] In addition, an intermediate capture portion 32 can be formed and a regeneration heater through hole 301 through which the regeneration heater 4 can pass can be formed on vertical capture plates 321 arranged at a certain interval around the periphery, and a regeneration heater fixing portion 302 can be installed between adjacent vertical capture plates to connect and fix the regeneration heater 4.

[0092] The lower end capture portion 33 is composed of an outer capture plate portion 331 with multiple flow holes formed on the surface, an intermediate capture plate portion 332 and an inner capture plate portion 333, and induces the flow of the exhaust gas, thereby preventing the exhaust gas in the intermediate capture portion 32 from directly flowing into the gas exhaust port 13a, blocking the exhaust gas from flowing in from the top and inducing the exhaust gas from the outer contour to the inside while performing a capture reaction, and then causing it to flow into the upper part of the gas exhaust port 13a protruding from the central part of the lower plate of the outer shell to the upper part and descend.

[0093] At this time, the lower end capture part 33 is coupled to the support frame 334 installed on the lower plate of the housing so as to support the entire load of the middle capture part 32 in a propped-up state and ensure smooth inflow of the exhaust gas.

[0094] The multi-structured outer capture plate portion 331, the middle capture plate portion 332 and the inner capture plate portion 333 are formed in such a way that the lower end gradually approaches the lower plate of the outer shell from the outer capture plate portion 331 to the inner capture plate portion 333, so as to be preferably formed in a shape into which the exhaust gas flowing in can flow in sequentially.

[0095] Next, an embodiment will be described in detail. The outer contour capture plate portion 331 can be formed in a quadrilateral cylindrical structure (it can also be a cylindrical or polygonal cylindrical structure) with an open lower portion, and a plurality of flow holes of the same size can be formed in the upper side capture plate and each side capture plate. At this time, a plurality of vortex forming sheets 331a can be arranged and installed on the outer side of each side of the outer contour capture plate portion 331 at an inclination angle gradually tilted toward the upper portion toward the outer side, so as to form a vortex while inducing the flow of the exhaust gas and thereby improve the capture efficiency.

[0096] In addition, the middle capture plate portion 332 may be formed in a quadrilateral cylindrical structure (or a cylindrical or polygonal cylindrical structure) with an open bottom, and may be formed at a certain distance from the upper side of the outer contour capture plate portion 331 through a spacer material 332a, while the upper side capture plate portion may be formed in a blocked structure and a plurality of flow holes may be formed in each side capture plate, and the exhaust gas may flow mainly to the lower side by forming a hole with a larger bottom hole and a smaller top hole. At this time, it is preferable to ensure that the exhaust gas flows smoothly and realize the capture reaction by forming a hole smaller than the outer contour capture plate portion 331 in the middle capture plate portion 332.

[0097] In addition, the inner capture plate portion 333 may be formed of a quadrilateral cylindrical structure (may also be cylindrical or polygonal cylindrical) with the lower and upper portions open and fixed to the middle capture plate portion by welding or the like, and a plurality of flow holes may be formed in each side capture plate, and the exhaust gas may flow mainly into the lower side by forming a hole with a larger lower hole and a smaller upper hole. In this case, it is preferable to form a hole smaller than the outer contour capture plate portion 331 in the inner capture plate portion 333 to ensure smooth flow of the exhaust gas and achieve the capture reaction.

[0098] When the internal capture tower 3 and the surrounding space are filled with reaction by-products due to the capture reaction or the process chamber reaches a dry cleaning cycle, the regeneration heater 4 can heat the reaction by-products deposited in the internal capture tower and the surrounding area to break them up and remove them, or collapse and gather them at the bottom to reduce their overall volume, thereby ensuring additional capture reaction space to achieve additional capture reactions again and thereby extend the service life.

[0099] To this end, the regeneration heater 4 can be arranged alternately in a zigzag pattern in the internal capture tower 3 by combining the curvature tube and the general tube to achieve heat conduction. At this time, the zigzag pattern can be installed in an alternate manner not only up and down, but also left and right.

[0100] Specifically, as an embodiment of the regeneration heater 4, the regeneration heater through hole 301 and the regeneration heater fixing portion 302 formed in the vertical capture plate 321 constituting the middle capture portion 32 can be installed alternately in a zigzag shape. At this time, the zigzag shape can be installed in an alternate manner not only up and down, but also left and right.

[0101] By installing the reaction byproducts in a zigzag pattern around the inner capture tower, the excellent heat conduction effect of the metal material can be used to quickly increase the temperature and make the reaction byproducts reach a temperature where they fall off the metal material. The principle of falling off from the capture plate of the metal material is that the reaction byproducts fixedly attached to the capture plate in a solid form will dry, shrink and break under a high temperature condition higher than the temperature condition during the capture reaction, thereby falling off from the original attachment surface.

[0102] As one embodiment, the regeneration heater 4 can be composed of an outer regeneration heater 41 installed on the outer side of the internal capture tower 3 and composed of a curvature tube and a general tube, and an inner regeneration heater 42 installed on the inner side and composed of a curvature tube and a general tube.

[0103] By adopting the structure as described above, the reaction by-products formed on the surface of the capture plate and the surrounding area formed around the middle capture section 32 constituting the internal capture tower 3 can be quickly removed, and the reaction by-products deposited on the surface of the capture plate and the surrounding space formed in the inner space section can also be quickly removed.

[0104] The outer regenerative heater 41 and the inner regenerative heater 42 may be powered by a power supply unit installed on the outside, or may be powered separately. In this case, the lower parts of the outer regenerative heater and the inner regenerative heater may be configured to pass through the lower plate of the housing, so that the power lines provided inside the outer regenerative heater and the inner regenerative heater are connected to the outside. In addition, the power supply unit may share the heater power supply unit 21 or may be configured using a separate dedicated power supply unit for the regenerative heater.

[0105] The outer regeneration heater 41 may be composed of one and surround the outside of the inner capture tower, or may be composed of two or more separate heaters for the convenience of installation.

[0106] Similarly, the inner regeneration heater 42 may be composed of one and installed inside the inner capture tower, or may be composed of two or more separate heaters for the convenience of installation.

[0107] When installing the outer regeneration heater 41, the regeneration heating through holes 301 formed in the vertical capture plates 321 arranged at a certain interval along the periphery of the intermediate capture portion 32 and the regeneration heater fixing portion 302 can be installed alternately in a zigzag shape.

[0108] When installing the inner regeneration heater, it can be installed via the periphery in a manner of contacting or approaching the vertical capture plate 321 installed in the internal space constituting the middle capture portion 32. That is, since the size of the vertical capture plate 321 formed in the central space portion is smaller than the vertical capture plates installed in the periphery and a plurality of them are not provided, it only needs to be installed in a manner that enables heat conduction.

[0109] Figure 7 is a schematic diagram illustrating the gas flow inside a reaction byproduct capture device applicable to one embodiment of the present invention, Figure 8 is a schematic diagram illustrating the first capture tendency inside a reaction byproduct capture device applicable to one embodiment of the present invention, Fig. 9 is a schematic diagram illustrating a capture area inside a reaction byproduct capture device secured by a regeneration process according to one embodiment of the present invention. Fig.10 This is a schematic diagram illustrating a secondary capture tendency after an additional capture reaction in a reaction byproduct capture device according to an embodiment of the present invention.

[0110] Next, the temperature conditions when performing the capture reaction of the reaction by-products in the exhaust gas and the regeneration reaction of removing the reaction by-products by using the internal capture tower and the regeneration heater to which the present invention is applied and equipped with the above-described configuration will be described.

[0111] First, an embodiment of the flow of exhaust gas will be described. The exhaust gas heated by the heater 2 and flowing into the outer shell of the housing will flow into the central part through the upper end capture part 31 of the internal capture tower 3, and will flow back to the outer shell through the middle capture part 32, and will then flow back to the central part through the lower end capture part 33 and to the upper end of the gas outlet 13a to form a descending airflow.

[0112] Regarding the capture reaction, when the capture device of the present invention is a capture device for capturing reaction by-products contained in the exhaust gas generated when the TiN (titanium nitride) deposition process is performed in the process chamber using TiCl4 and NH3 gases in the flow of the exhaust gas as described above, the reaction by-product capture reaction temperature of each capture plate constituting the internal capture tower 3 is heated to a temperature range below 120°C by using the heater power supply unit 21 to induce a capture reaction and thereby achieve the first capture reaction.

[0113] Under the above conditions, when the reaction byproduct capture reaction in the internal capture tower reaches saturation, Figure 8 As shown, the reaction byproducts may be attached or deposited inside the housing, causing the reaction byproduct capture reaction to be unable to continue normally and the capture operation to stop.

[0114] Next, the regeneration reaction will start. For the exhaust gas component to which one embodiment of the present invention is applied, the exhaust gas component is heated to a temperature higher than 400° C., which is a capture reaction temperature, in order to break and remove the reaction byproducts formed from the internal capture tower 3 .

[0115] When heating starts and reaches a high temperature condition higher than 400°C, the temperature condition during the capture reaction, the regeneration reaction begins because the reaction start temperature is reached. Therefore, the reaction byproducts that have been formed and attached or deposited on the surface of the capture plate constituting the internal capture tower and in the internal and external spaces begin to change from a solid form to a broken form. Next, when the temperature reaches 550-600°C, the regeneration reaction reaches its peak and most of the reaction byproducts break up and accumulate in the lower space, so that Fig. 9 As shown, new capture spaces are formed inside and outside the inner capture tower.

[0116] Next, the regeneration reaction is terminated by stopping the operation of the regeneration heater.

[0117] Next, the temperature in the housing is readjusted to a temperature range below 120°C by using the power supply unit 21 and the capture reaction is started again, thereby achieving a second capture reaction. By achieving the additional capture reaction as described above, the reaction byproducts will adhere to or deposit on the Fig. 9 The internal capture tower ensures the internal and external space is Fig.10 Status shown.

[0118] After reaching the above-mentioned state, the regeneration reaction can be started again. However, it is preferable to replace the capture device with a new capture device after performing a regeneration operation and to wash the inside of the replaced capture device.

[0119] The temperature conditions described in the above embodiments may vary depending on the process gas used in the deposition process performed in the process chamber, but the temperature of the regeneration reaction for removing the reaction byproducts is higher than the temperature applicable in the capture reaction.

[0120] The present invention is not limited to the specific preferred embodiments described above, and various modifications may be made by persons having general knowledge in the technical field to which the present invention belongs without departing from the gist of the present invention as claimed in the claims, and the changes are included in the scope described in the claims.

Claims

1. A reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower, characterized in that: A reaction byproduct capture device installed between a process chamber and a vacuum pump or between a vacuum pump and a scrubber in a semiconductor manufacturing process, in order to capture and discharge reaction byproducts contained in exhaust gas discharged after a deposition process, comprising a heater (2) for heating the exhaust gas flowing into an outer shell (1) and an internal capture tower (3) for capturing the reaction product in the exhaust gas flowing into the inner shell. It comprises: a regeneration heater (4), which is installed in the internal capture tower (3) and removes the reaction by-products through a heating reaction; thereby ensuring the internal and external space of the internal capture tower (3) and thereby realizing an additional capture reaction, The reaction byproduct capture device is used to capture reaction byproducts contained in exhaust gas generated when TiN deposition process is performed in a process chamber using TiCl4 and NH3 gases. The device heats the inner space of the shell to a temperature range below 120°C using a heater (2) and captures the reaction byproducts in the exhaust gas using an internal capture tower (3). Then, after the capture reaction is completed, a regeneration heater (4) is heated to above 400°C to remove the reaction byproducts inside and outside the internal capture tower (3) through a regeneration operation, thereby ensuring additional capture reaction space.

2. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 1, characterized in that: The regeneration heaters (4) are alternately arranged in a zigzag pattern in the inner capture tower (3) to achieve heat conduction.

3. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 1 or claim 2, characterized in that: The regeneration heater (4) includes: an outer regeneration heater (41) installed in contact with or close to the outer side of the inner capture tower (3); and an inner regeneration heater (42) installed in the inner space.

4. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 3, characterized in that: The outer regeneration heater (41) is composed of one or more separate heaters and surrounds the outside of the inner capture tower.

5. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 3, characterized in that: The inner regeneration heater (42) is composed of one or more separate heaters and surrounds the outside of the inner capture tower.

6. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 1, characterized in that: The internal capture tower (3) includes: an upper end capture portion (31) that performs a capture reaction while inducing the flow of exhaust gas distributed to the outer contour and descending through the heater to the central portion; an intermediate capture section (32) that performs a capture reaction while inducing the flow of the descending exhaust gas to the outer contour, and removes reaction byproducts by installing a regeneration heater (4); and The lower end capture part (33) guides the exhaust gas descending from the outer shell to the central gas discharge port (13a) and performs a capture reaction.

7. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 6, characterized in that: The upper end capture portion (31) is constructed in the form of a flat plate and has a main flow hole (311) formed in the center, and a plurality of auxiliary flow holes (312) are formed in a circular arrangement around the main flow hole (311). By arranging triangular plates (313) for inducing the flow of exhaust gas and cross plates (314) for generating vortices in a circular manner around the upper side surface and arranging quadrilateral plates (315) in a circular manner on the lower side surface, the exhaust gas descending through the main flow hole (311) and the auxiliary flow holes (312) is induced to descend evenly.

8. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 6 or claim 7, characterized in that: The upper end capturing portion (31) is installed at a certain height from the middle capturing portion (32) through a certain length of spacing material (316) installed at the lower portion and a supporting portion (317).

9. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 6, characterized in that: The intermediate capture portion (32) is composed of a plurality of vertical capture plates (321) arranged at a certain interval, a regeneration heater through hole (301) through which the regeneration heater (4) can pass is formed in the vertical capture plate (321), and a regeneration heater fixing portion (302) is installed to connect adjacent vertical capture plates and fix the regeneration heater (4) at the same time.

10. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 9, characterized in that: The middle capture portion (32) is provided with a vertical capture plate (321d) that is relatively smaller in size than a plurality of vertical capture plates (321c) arranged at a certain interval along the periphery in the inner space, thereby achieving heat conduction from the regeneration heater (4).

11. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 6, characterized in that: The lower end capture portion (33) is composed of an outer capture plate portion (331) having flow holes formed on the surface, an intermediate capture plate portion (332) and an inner capture plate portion (333). In order to prevent the exhaust gas from directly flowing into the gas exhaust port (13a), the capture reaction is performed while blocking the exhaust gas from flowing in from the top and inducing the exhaust gas from the outer contour to the inside. The entire load of the intermediate capture portion (32) is supported in a propped-up state by being coupled to a support frame (334) installed on the lower plate of the outer shell.

12. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 11, characterized in that: The outer contour capture plate portion (331) is formed with a structure with an open lower portion, a plurality of flow holes are formed in the upper side capture plate and each side capture plate, and a plurality of vortex forming sheets (331a) are arranged and installed on the outer side at an inclined angle.

13. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 11, characterized in that: The middle capture plate portion (332) is constructed with an open structure at the lower portion and is spaced a certain distance from the upper side of the outer contour capture plate portion (331) through a spacer material (332a). The upper side capture plate is constructed with a closed structure and a plurality of flow holes are formed on each side capture plate.

14. The reaction byproduct capture device equipped with a self-regeneration function of a used internal capture tower according to claim 11, characterized in that: The inner capture plate portion (333) is formed with a structure in which the lower portion and the upper portion are open and is fixed to the middle capture plate portion, and a plurality of flow holes are formed on each side capture plate.

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