Epitaxial wafer yield improvement method, system, readable storage medium and computer

Abstract

This invention discloses a method, system, readable storage medium, and computer for improving epitaxial wavelength yield. The method includes: dividing the heating wire of a graphite carrier disk into multiple heating wire regions; dividing all epitaxial wafers on the graphite carrier disk into multiple point sets to obtain multiple target regions, and calculating the temperature slope of each target region; adding a wavelength coefficient and calculating the wavelength slope of each target region; calculating the wavelength difference of each target region in the next batch based on the average wavelength of each target region in the next batch and the target wavelength; and using a planning and solving method to obtain the optimal set temperature change of each temperature detector based on the wavelength difference of each target region in the next batch and the area ratio of each target region, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic technology, and in particular to a method, system, readable storage medium, and computer for improving the wavelength yield of epitaxial wafers. Background Technology

[0002] In current MOCVD (e.g., metal-organic chemical vapor deposition) equipment, high-purity graphite carrier disks are used as the heat conduction medium between the epitaxial substrate and the heating system. In the reaction chamber of the MOCVD equipment, the graphite carrier disks are radiated and heated by the heating system, thereby making the substrate temperature reach the synthesis temperature of each chemical thin film in the epitaxial wafer.

[0003] Typically, graphite carrier disks have two or more pockets for placing epitaxial wafers. The heating system usually uses rhenium and tungsten as heating wires, which are also divided into two or more zones. Each heating zone can be adjusted independently and does not contact the others. The heating wires are located at the bottom of the graphite carrier disk, and each heating wire zone has a temperature sensor above it to detect and control the temperature of the graphite carrier disk. The number of temperature sensors is the same as the number of heating wire zones.

[0004] In the prior art, the wavelength of each ring (number of rings >= 2) of epitaxial wafer produced on the graphite carrier pocket is analyzed. By comparing the difference between the average wavelength of the epitaxial wafer above different heating wire regions and the target wavelength, the set temperature of the heating wire corresponding to each region at the bottom of the graphite carrier is adjusted so that the wavelength of each ring of epitaxial wafer grown is closer to the target wavelength.

[0005] In existing technologies, the temperature of the graphite disk surface is controlled by a temperature detector through a single point. However, the distance between the temperature detectors is relatively long, resulting in a difference between the actual temperature projected onto the graphite disk and the set temperature of the temperature detector. Furthermore, this difference changes as the set temperature changes. Existing technologies cannot analyze the magnitude of the change in the actual temperature projected onto the graphite disk due to variations in the set temperature. This leads to poor wavelength uniformity in the produced epitaxial wafers, indirectly affecting the difference between the produced wavelength and the target wavelength on the pocket, resulting in wavelength uniformity deviation and a loss in wavelength yield. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide a method for improving the wavelength yield of epitaxial wafers, which can solve the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms.

[0007] To address the aforementioned technical problems, this invention provides a method for improving the wavelength yield of epitaxial wafers, comprising the following steps:

[0008] The heating wire of the graphite support disk is divided into multiple heating wire regions, each of which is isolated from each other, and each of which has a temperature detector above it for detecting and controlling the temperature of the heating wire region.

[0009] The graphite carrier disk is divided into multiple point sets to obtain multiple target regions. Each temperature detector is set to a first set temperature and the first measurement temperature of each target region is measured. Then, each temperature detector is set to a second set temperature and the second measurement temperature of each target region is measured. The temperature slope of each target region is calculated based on the first set temperature, the first measurement temperature, the second set temperature, and the second measurement temperature.

[0010] Add a wavelength coefficient and calculate the wavelength slope of each target region;

[0011] Calculate the average wavelength of the next batch for each of the target regions, and calculate the wavelength difference between each of the target regions in the next batch based on the average wavelength of the next batch for each of the target regions and the target wavelength;

[0012] Based on the wavelength difference of each target region in the next batch and the area ratio of each target region, the optimal set temperature change of each temperature detector is obtained by using a planning and solving method, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

[0013] In one embodiment, the step of dividing all epitaxial wafers on the graphite support disk into multiple point sets to obtain multiple target regions includes:

[0014] The graphite support disk is divided into concentric circles of different sizes according to the distance from the center of the graphite support disk, forming multiple rings. The common area between the rings and the epitaxial wafer area is the target area.

[0015] In one embodiment, the formula for calculating the temperature slope of each target region is:

[0016] F = (D2 - D1) / (T2 - T1)

[0017] In the formula, F represents the temperature slope of the target area, T1 represents the first set temperature, D1 represents the first measured temperature, T2 represents the second set temperature, and D2 represents the second measured temperature.

[0018] In one embodiment, the wavelength slope = W × F,

[0019] In the formula, F represents the temperature slope of the target region, and W represents the wavelength coefficient;

[0020] The wavelength coefficient is a constant.

[0021] In one embodiment, the formula for calculating the average wavelength of the next batch in each of the target regions is as follows:

[0022] NWD = WD - V × W × F

[0023] In the formula, NWD represents the average wavelength of the next batch in each target area, WD represents the average wavelength of the current batch in each target area, and V represents the set temperature change of each temperature detector.

[0024] In one embodiment, the step of averaging the wavelength of the current furnace in each of the target regions includes:

[0025] The independent wavelengths of all point sets in each target region are obtained, and the mean wavelength of each target region is calculated based on the independent wavelengths of all point sets in each target region.

[0026] In one embodiment, the step of obtaining the set temperature change of each temperature detector using a planning and solving method based on the wavelength difference of each target region in each of the next batches and the area ratio of each target region includes:

[0027] The area ratio of the target region is multiplied by the wavelength difference of each target region in the next batch, and the absolute value is taken to obtain the first value;

[0028] The first values ​​of each target region are added together to obtain the second value;

[0029] The set temperature change of each temperature detector is randomly changed to minimize the second value, thus obtaining the optimal set temperature change of each temperature detector.

[0030] This invention also proposes an epitaxial wavelength yield improvement system, comprising:

[0031] The heating wire division module is used to divide the heating wire of the graphite support disk into multiple heating wire regions. Each heating wire region is isolated from each other, and each heating wire region has a temperature detector above it for detecting and controlling the temperature of the heating wire region.

[0032] The epitaxial wafer division module is used to divide all epitaxial wafers on the graphite carrier disk into multiple point sets to obtain multiple target regions;

[0033] The temperature slope calculation module is used to set each temperature detector to a first set temperature, measure the first measured temperature of each target area, then set each temperature detector to a second set temperature, measure the second measured temperature of each target area, and calculate the temperature slope of each target area based on the first set temperature, the first measured temperature, the second set temperature, and the second measured temperature.

[0034] The wavelength slope calculation module is used to add wavelength coefficients and calculate the wavelength slope of each target region.

[0035] The wavelength difference calculation module calculates the average wavelength of the next batch for each of the target regions, and calculates the wavelength difference between each of the target regions in the next batch based on the average wavelength of the next batch for each of the target regions and the target wavelength.

[0036] The wavelength yield improvement module is used to obtain the optimal set temperature change of each temperature detector by using a planning and solving method based on the wavelength difference of each target region in the next batch and the area ratio of each target region, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

[0037] The present invention also proposes a readable storage medium storing a computer program that, when executed by a processor, implements the epitaxial wafer wavelength yield improvement method.

[0038] The present invention also proposes a computer, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the epitaxial wafer wavelength yield improvement method.

[0039] Implementing this invention has the following beneficial effects:

[0040] This invention proposes a method to improve the wavelength yield of epitaxial wafers. It accurately calculates the difference between the actual temperature and the set temperature of the temperature detectors between the projections of each temperature detector on the graphite carrier. When the set temperature of the temperature detector changes, it can also accurately calculate the actual temperature change between the projections of each temperature detector on the graphite carrier, and indirectly calculate the output wavelength distribution of the epitaxial wafer on the pocket between the temperature detector projections. By adjusting the set temperature of the temperature detector, the wavelength of the produced epitaxial wafer is made closer to the target wavelength, with better wavelength stability and uniformity, thereby improving the yield of chip products. Attached Figure Description

[0041] Figure 1 This is a flowchart of the method for improving epitaxial wavelength yield in the first embodiment of the present invention;

[0042] Figure 2This is a schematic diagram showing the distribution of the heating wire region and the carrier disk groove in the first embodiment of the present invention;

[0043] Figure 3 For each point set X in the first embodiment of the present invention i Regional distribution and epitaxial plate distribution map;

[0044] Figure 4 The point sets X before and after adjustment in the first embodiment of the present invention i Wavelength variation;

[0045] Figure 5 This is a structural block diagram of the epitaxial wavelength yield improvement system in the second embodiment of the present invention;

[0046] Figure 6 This is a structural block diagram of the computer in the third embodiment of the present invention. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be described in further detail below.

[0048] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0050] Example 1

[0051] Please see Figure 1 The figure shows a method for improving epitaxial wavelength yield in the first embodiment of the present invention, the method specifically including steps S101 to S105:

[0052] S101, the heating wire of the graphite support disk is divided into multiple heating wire regions, each heating wire region is isolated from each other, and a temperature detector is located above each heating wire region to detect and control the temperature of the heating wire region.

[0053] It should be noted that you should refer to [link / reference]. Figure 2 ,Depend on Figure 2As can be seen, the existing graphite carrier disk has three heating wire regions, each with a temperature detector. Each temperature detector controls the temperature of the graphite carrier disk surface through a single point. Furthermore, the distance between the temperature detectors is relatively large, resulting in a difference between the actual temperature projected onto the graphite carrier disk and the set temperature of the detector. This difference changes as the set temperature changes. Current technology cannot analyze the extent of the change in actual temperature between the projected temperatures of the graphite carrier disk and the temperature detector's set temperature. This leads to poor wavelength uniformity in the produced epitaxial wafers, indirectly affecting the difference between the produced wavelength and the target wavelength on the pocket, resulting in wavelength uniformity deviation and a loss in wavelength yield.

[0054] In a specific implementation, the heating wire on the graphite support plate is divided into multiple heating wire regions. In this embodiment, the number of heating wire regions is 3. It can be understood that the number of heating wire regions is not limited to 3.

[0055] The temperature detector includes a temperature sensor, which refers to an RTD temperature sensor, i.e., a resistance temperature sensor. It is understood that the temperature detector is not limited to a temperature sensor; any device capable of temperature detection and control can be used as a temperature detector in this application.

[0056] S102, divide all epitaxial wafers on the graphite carrier disk into multiple point sets to obtain multiple target regions, set each temperature detector to a first set temperature, measure the first measurement temperature of each target region, set each temperature detector to a second set temperature, measure the second measurement temperature of each target region, and calculate the temperature slope of each target region based on the first set temperature, the first measurement temperature, the second set temperature, and the second measurement temperature.

[0057] Furthermore, the graphite support disk is divided into concentric circles of different sizes based on their distance from the center of the graphite support disk, forming multiple annular rings. The common area between these annular rings and the epitaxial wafer region is the target region. Please refer to [link / reference] for details. Figure 3 ,Depend on Figure 3 It can be seen that dividing the graphite support disk into concentric circles of different sizes according to their distance from the center of the graphite support disk, forming multiple rings, and dividing the common area of ​​the rings and the epitaxial wafer region into i regions, yields i target regions, where i≥2, i.e. Figure 3 The point set X1 to point set X in i .

[0058] Then, the formula for calculating the temperature slope of each target region is:

[0059] F = (D2 - D1) / (T2 - T1)

[0060] In the formula, F represents the temperature slope of the target area, T1 represents the first set temperature, D1 represents the first measured temperature, T2 represents the second set temperature, and D2 represents the second measured temperature.

[0061] In this embodiment, the first set temperature of the three temperature detectors is set to T. 11 T 12 T 13 The number of heating wire areas or temperature detectors is not limited to 3;

[0062] By using an auxiliary instrument and the controlled variable method, the actual temperature at point i is measured by moving laterally between temperature detectors, and D is obtained. 11 ~D 1i :

[0063] Change the set temperature of each temperature sensor to T respectively 21 T 22 T 23 By using auxiliary instruments to move laterally between the temperature detectors, the actual temperature at each of the i points was measured when the set temperature of each temperature detector changed, thus obtaining D. 21 ~D 2i ;

[0064] The temperature slope at point i is calculated using the above formula when the temperature of each temperature detector changes, resulting in the temperature slope F of the first temperature detector. 11 F 12 F 13 …F 1i The temperature slope of the second temperature detector: F 21 F 22 F 23 …F 2i The temperature slope of the probe RT3 of the third temperature detector: F 31 F 32 F 33 …F 3i .

[0065] S103, add wavelength coefficients and calculate the wavelength slope of each target region.

[0066] In one embodiment, the wavelength slope = W × F,

[0067] In the formula, F represents the temperature slope of the target area, and W represents the wavelength coefficient; the wavelength coefficient is a constant, that is, the wavelength change corresponding to a unit temperature change.

[0068] In this embodiment, the wavelength slope of the epitaxial wafer at each point is as follows when the temperature of each temperature detector changes:

[0069] The wavelength slope of the first temperature detector is W×F 11 W×F 12 W×F 13 …W×F 1i ;

[0070] The wavelength slope of the second temperature detector is W×F 21 W×F 22 W×F 23 …W×F 2i ;

[0071] The wavelength slope of the third temperature detector is W×F 31 W×F 32 W×F 33 …W×F 3i .

[0072] S104, calculate the average wavelength of the next batch of each target region, and calculate the wavelength difference of each target region in the next batch based on the average wavelength of the next batch of each target region and the target wavelength.

[0073] The formula for calculating the average wavelength of the next batch for each of the target regions is as follows:

[0074] NWD = WD - V × W × F

[0075] In the formula, NWD represents the average wavelength of the next batch in each target area, WD represents the average wavelength of the current batch in each target area, and V represents the set temperature change of each temperature detector.

[0076] The set temperature change of each temperature detector is unknown, which is also the answer that needs to be planned and solved in this embodiment.

[0077] The step of calculating the average wavelength of each target region in this batch includes: obtaining the independent wavelengths of all point sets in each target region, and calculating the average wavelength of each target region based on the independent wavelengths of all point sets in each target region.

[0078] In this embodiment, the average wavelength of each target region in the next batch is as follows:

[0079] Average wavelength of the first target region: NWD1=WD1-V1*W*F 11 -V2*W*F 21 -V3*W*F 31 ;

[0080] Average wavelength of the second target region: NWD2=WD2-V1*W*F 12 -V2*W*F 22 -V3*W*F 32 ;

[0081] Average wavelength in the third target region: NWD3=WD3-V1*W*F 13 -V2*W*F 23 -V3*W*F 33 ;

[0082] ...

[0083] Average wavelength of the i-th target region: NWD i =WD i -V1*W*F 1i -V2*W*F 2i -V3*W*F 3i .

[0084] Here, V1 represents the set temperature change of the first temperature detector, V2 represents the set temperature change of the first temperature detector, and V3 represents the set temperature change of the first temperature detector. The above changes are unknown and are also the answers that need to be planned and solved in this embodiment.

[0085] The wavelength differences of each target region in the next batch are as follows:

[0086] Wavelength difference in the first target region: NWD1-AWD;

[0087] Wavelength difference in the second target region: NWD2-AWD;

[0088] Wavelength difference in the third target region: NWD3-AWD;

[0089] ...

[0090] Wavelength difference in the i-th target region: NWD i -AWD;

[0091] Here, AWD refers to the target wavelength.

[0092] S105, based on the wavelength difference of each target region in the next batch and the area ratio of each target region, the optimal set temperature change of each temperature detector is obtained by using a planning and solving method, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

[0093] Furthermore, the area ratio of the target region is multiplied by the wavelength difference of each target region in the next batch, and the absolute value is taken to obtain the first value;

[0094] The first values ​​of each target region are added together to obtain the second value;

[0095] The set temperature change of each temperature detector is randomly changed to minimize the second value, thus obtaining the optimal set temperature change of each temperature detector.

[0096] In this embodiment, the above formula is as follows:

[0097] |b 1* (NWD1-AWD)|+|b 2* (NWD2-AWD)|+|b 3* (NWD3-AWD)|+……+|b i* (NWD i -AWD)|=X

[0098] By randomly changing V1, V2, and V3 to minimize the value of X, the optimal set temperature change of V1, V2, and V3 is obtained.

[0099] Adjust according to the optimal set temperature change obtained above. Figure 4 To adjust the point set X before and after i The wavelength change.

[0100] In summary, this invention proposes a method to improve the wavelength yield of epitaxial wafers. It accurately calculates the difference between the actual temperature and the set temperature of the temperature detectors between the projections of each temperature detector on the graphite carrier. When the set temperature of the temperature detector changes, it can also accurately calculate the actual temperature change between the projections of each temperature detector on the graphite carrier, and indirectly calculate the output wavelength distribution of the epitaxial wafer on the pocket between the temperature detector projections. By adjusting the set temperature of the temperature detector, the wavelength of the output epitaxial wafer is made closer to the target wavelength, with better wavelength stability and uniformity, thereby improving the yield of chip products.

[0101] Example 2

[0102] In another aspect, this invention also proposes an epitaxial wavelength yield improvement system, please refer to [link / reference needed]. Figure 5 The figure shows an epitaxial wavelength yield improvement system according to a second embodiment of the present invention, comprising:

[0103] The heating wire division module 11 is used to divide the heating wire of the graphite support disk into multiple heating wire regions. Each heating wire region is isolated from each other, and each heating wire region has a temperature detector above it for detecting and controlling the temperature of the heating wire region.

[0104] Epitaxial wafer division module 12 is used to divide all epitaxial wafers on the graphite carrier disk into multiple point sets to obtain multiple target regions;

[0105] The temperature slope calculation module 13 is used to set each temperature detector to a first set temperature, measure the first measured temperature of each target area, set each temperature detector to a second set temperature, measure the second measured temperature of each target area, and calculate the temperature slope of each target area based on the first set temperature, the first measured temperature, the second set temperature, and the second measured temperature.

[0106] The wavelength slope calculation module 14 is used to add wavelength coefficients and calculate the wavelength slope of each target region.

[0107] The wavelength difference calculation module 15 calculates the average wavelength of the next batch of each target region, and calculates the wavelength difference of each target region in the next batch based on the average wavelength of the next batch of each target region and the target wavelength.

[0108] The wavelength yield improvement module 16 is used to obtain the optimal set temperature change of each temperature detector by using a planning and solving method based on the wavelength difference of each target region in the next batch and the area ratio of each target region, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

[0109] The functions or operation steps implemented by the above modules and units are largely the same as those in the above method embodiments, and will not be repeated here.

[0110] The epitaxial wavelength yield improvement system provided in this embodiment of the invention has the same implementation principle and technical effect as the aforementioned method embodiment. For the sake of brevity, any parts not mentioned in the device embodiment can be referred to the corresponding content in the aforementioned method embodiment.

[0111] Example 3

[0112] This invention also proposes a computer, please refer to [link / reference]. Figure 6 The computer shown in the third embodiment of the present invention includes a memory 10, a processor 20, and a computer program 30 stored in the memory 10 and executable on the processor 20. When the processor 20 executes the computer program 30, it implements the above-described method for improving the yield of epitaxial wavelength.

[0113] The memory 10 includes at least one type of readable storage medium, such as flash memory, hard disk, multimedia card, card-type memory (e.g., SD or DX memory), magnetic memory, magnetic disk, optical disk, etc. In some embodiments, the memory 10 can be an internal storage unit of a computer, such as the computer's hard disk. In other embodiments, the memory 10 can be an external storage device, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. Furthermore, the memory 10 can include both internal and external storage units of the computer. The memory 10 can be used not only to store application software and various types of data installed on the computer, but also to temporarily store data that has been output or will be output.

[0114] In some embodiments, the processor 20 may be an electronic control unit (ECU, also known as a vehicle computer), a central processing unit (CPU), a controller, a microcontroller, a microprocessor, or other data processing chip, used to run program code stored in the memory 10 or process data, such as executing access restriction programs.

[0115] It should be pointed out that, Figure 6 The structure shown does not constitute a limitation on the computer. In other embodiments, the computer may include fewer or more components than shown, or combine certain components, or have different component arrangements.

[0116] This invention also proposes a readable storage medium storing a computer program that, when executed by a processor, implements the epitaxial wavelength yield improvement method described above.

[0117] Those skilled in the art will understand that the logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequential list of executable instructions for implementing logical functions, and can be embodied in any computer-readable storage medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable storage medium" can mean any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device.

[0118] More specific examples (a non-exhaustive list) of computer-readable storage media include: electrical connections (electronic devices) having one or more wires, portable computer disk drives (magnetic devices), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Furthermore, computer-readable storage media can even be paper or other suitable readable storage media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other readable storage medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in computer memory.

[0119] It should be understood that various parts of the present invention can be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0120] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0121] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for improving the wavelength yield of epitaxial wafers, characterized in that, Includes the following steps: The heating wire of the graphite support disk is divided into multiple heating wire regions, each of which is isolated from each other, and each of which has a temperature detector above it for detecting and controlling the temperature of the heating wire region. The epitaxial wafers on the graphite support disk are divided into multiple point sets to obtain multiple target regions. Each temperature detector is set to a first preset temperature, and the first measured temperature of each target region is measured. Then, each temperature detector is set to a second preset temperature, and the second measured temperature of each target region is measured. The temperature slope of each target region is calculated based on the first preset temperature, the first measured temperature, the second preset temperature, and the second measured temperature. The formula for calculating the temperature slope of each target region is as follows: F = (D2 - D1) / (T2 - T1) In the formula, F represents the temperature slope of the target area, T1 represents the first set temperature, D1 represents the first measurement temperature, T2 represents the second set temperature, and D2 represents the second measurement temperature; Add a wavelength coefficient and calculate the wavelength slope of each target region; the wavelength slope = W × F. In the formula, F represents the temperature slope of the target region, and W represents the wavelength coefficient; The wavelength coefficient is a constant value; Calculate the average wavelength of the next batch for each of the target regions, and calculate the wavelength difference between each target region in the next batch based on the average wavelength of the next batch for each of the target regions and the target wavelength; the formula for calculating the average wavelength of the next batch for each of the target regions is as follows: NWD = WD - V × W × F In the formula, NWD represents the average wavelength of the next batch in each target area, WD represents the average wavelength of the current batch in each target area, and V represents the set temperature change of each temperature detector; Based on the wavelength difference of each target region in the next batch and the area ratio of each target region, the optimal set temperature change of each temperature detector is obtained by using a planning and solving method, so as to improve the wavelength yield of the epitaxial wafers produced in each target region. The step of obtaining the set temperature change of each temperature detector using a planning and solving method based on the wavelength difference of each target region in each of the next batches and the area ratio of each target region includes: The area ratio of the target region is multiplied by the wavelength difference of each target region in the next batch, and the absolute value is taken to obtain the first value; The first values ​​of each target region are added together to obtain the second value; The set temperature change of each temperature detector is randomly changed to minimize the second value, thus obtaining the optimal set temperature change of each temperature detector.

2. The method for improving the wavelength yield of epitaxial wafers according to claim 1, characterized in that, The step of dividing all epitaxial wafers on the graphite support disk into multiple point sets to obtain multiple target regions includes: The graphite support disk is divided into concentric circles of different sizes according to the distance from the center of the graphite support disk, forming multiple rings. The common area between the rings and the epitaxial wafer area is the target area.

3. The method for improving the wavelength yield of epitaxial wafers according to claim 1, characterized in that, The step of averaging the wavelength of each target region in this batch includes: The independent wavelengths of all point sets in each target region are obtained, and the mean wavelength of each target region is calculated based on the independent wavelengths of all point sets in each target region.

4. A system for improving the wavelength yield of epitaxial wafers, characterized in that, include: The heating wire division module is used to divide the heating wire of the graphite support disk into multiple heating wire regions. Each heating wire region is isolated from each other, and each heating wire region has a temperature detector above it for detecting and controlling the temperature of the heating wire region. The epitaxial wafer division module is used to divide all epitaxial wafers on the graphite carrier disk into multiple point sets to obtain multiple target regions; The temperature slope calculation module is used to set each temperature detector to a first preset temperature, measure the first measured temperature of each target area, then set each temperature detector to a second preset temperature, measure the second measured temperature of each target area, and calculate the temperature slope of each target area based on the first preset temperature, the first measured temperature, the second preset temperature, and the second measured temperature. The formula for calculating the temperature slope of each target area is as follows: F = (D2 - D1) / (T2 - T1) In the formula, F represents the temperature slope of the target area, T1 represents the first set temperature, D1 represents the first measurement temperature, T2 represents the second set temperature, and D2 represents the second measurement temperature; The wavelength slope calculation module is used to add wavelength coefficients and calculate the wavelength slope of each target region; the wavelength slope = W × F. In the formula, F represents the temperature slope of the target region, and W represents the wavelength coefficient; The wavelength coefficient is a constant value; The wavelength difference calculation module calculates the average wavelength of the next batch for each of the target regions, and calculates the wavelength difference between each target region in the next batch based on the average wavelength of the next batch for each target region and the target wavelength; the formula for calculating the average wavelength of the next batch for each target region is as follows: NWD = WD - V × W × F In the formula, NWD represents the average wavelength of the next batch in each target area, WD represents the average wavelength of the current batch in each target area, and V represents the set temperature change of each temperature detector; The wavelength yield improvement module is used to obtain the optimal set temperature change of each temperature detector by using a planning and solving method based on the wavelength difference of each target region in the next batch and the area ratio of each target region, so as to improve the wavelength yield of the epitaxial wafers produced in each target region.

5. A readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the computer program implements the method for improving the wavelength yield of epitaxial wafers as described in any one of claims 1 to 3.

6. A computer comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the epitaxial wafer wavelength yield improvement method as described in any one of claims 1 to 3.

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