Method and apparatus for detecting ambient temperature of electronic device

Abstract

The application discloses an environment temperature detection method and device of an electronic device, the electronic device and a storage medium, and belongs to the technical field of electronic devices. First, the resistance value of a thermistor arranged in the electronic device is read, and the surface temperature of the electronic device is obtained through calculation. Then, the device heat consumption value of the electronic device is obtained through the electrical parameter of the electronic device. The device heat consumption value is the heat value generated by components during use of the electronic device. The surface temperature rise value of the electronic device is calculated from the device heat consumption value. The surface temperature rise value is the temperature rise amount caused by the device heat consumption value to the electronic device. Finally, the ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic devices, and in particular to an environment temperature detection method and device for an electronic device, an electronic device, and a storage medium. BACKGROUND

[0002] In operation, a mobile electronic device often generates heat. The heat is caused by the heat dissipation of the electronic device itself and the poor heat dissipation environment of the electronic device. Precise monitoring of the environment temperature of the electronic device and making corresponding adjustments are important measures to ensure stable operation of the electronic device.

[0003] In the related art, a sensor integrated in an electronic device is used to detect the environment temperature.

[0004] However, the sensor detection result lacks timeliness and cannot eliminate the influence of the heat generated by the operation of the electronic device itself. The detection accuracy of the environment temperature of the electronic device is poor. SUMMARY

[0005] Embodiments of the present application provide an environment temperature detection method and device for an electronic device, an electronic device, and a storage medium, which can solve the problem of poor detection accuracy of the environment temperature of the electronic device in the prior art.

[0006] In a first aspect, an environment temperature detection method for an electronic device is provided, which includes:

[0007] obtaining a resistance value of a thermistor arranged inside the electronic device, and calculating a surface temperature of the electronic device according to the resistance value of the thermistor;

[0008] obtaining an electrical parameter of the electronic device, and calculating a device heat consumption value of the electronic device according to the electrical parameter; the device heat consumption value is used to represent a heat value generated by the current heat effect of components in the electronic device during use;

[0009] calculating a surface temperature rise value of the electronic device according to the device heat consumption value; the surface temperature rise value is a temperature rise amount caused by the device heat consumption value to the electronic device;

[0010] calculating an environment temperature around the electronic device according to the surface temperature and the surface temperature rise value.

[0011] In a second aspect, an environment temperature detection device for an electronic device is provided, which includes:

[0012] a surface temperature determination module configured to obtain a resistance value of a thermistor arranged inside the electronic device, and calculate a surface temperature of the electronic device according to the resistance value of the thermistor;

[0013] a device heat consumption value determination module configured to obtain an electrical parameter of the electronic device, and calculate a device heat consumption value of the electronic device according to the electrical parameter; the device heat consumption value is used to represent a heat value generated by a current heat effect of a component in the electronic device during use;

[0014] a surface temperature rise value determination module configured to calculate a surface temperature rise value of the electronic device according to the device heat consumption value; the surface temperature rise value is a temperature rise amount caused by the device heat consumption value to the electronic device;

[0015] an ambient temperature determination module configured to calculate an ambient temperature around the electronic device according to the surface temperature and the surface temperature rise value.

[0016] In a third aspect, an electronic device is provided, which includes a processor and a memory, the memory stores programs or instructions executable on the processor, and the programs or instructions are executed by the processor to implement the steps of the method in the first aspect.

[0017] In a fourth aspect, a readable storage medium is provided, which stores programs or instructions, and the programs or instructions are executed by a processor to implement the steps of the method in the first aspect.

[0018] In a fifth aspect, a chip is provided, which includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is configured to run programs or instructions to implement the method in the first aspect.

[0019] In a sixth aspect, a computer program product is provided, which is stored in a storage medium, and the program product is executed by at least one processor to implement the method in the first aspect.

[0020] In the embodiments of the present application, first, the surface temperature of the electronic device is calculated by reading the resistance value of the thermistor arranged inside the electronic device; then, the device heat consumption value of the electronic device is obtained through the electrical parameter of the electronic device; the device heat consumption value is the heat value generated by the component in the electronic device during use; the surface temperature rise value of the electronic device is calculated from the device heat consumption value; the surface temperature rise value is the temperature rise amount caused by the device heat consumption value to the electronic device; finally, the ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device, and improve the detection accuracy of the ambient temperature. Attached Figure Description

[0021] Figure 1 This is a simplified implementation flowchart of an electronic device ambient temperature detection method provided in an embodiment of this application;

[0022] Figure 2 This is a component layout and connection diagram of an electronic device provided in an embodiment of this application;

[0023] Figure 3 This application provides a time-temperature variation statistical graph of the surface temperature rise of a device, as shown in an embodiment.

[0024] Figure 4 This is a logic block diagram of an electronic device for detecting ambient temperature, provided in an embodiment of this application.

[0025] Figure 5 This is a flowchart illustrating the complete implementation steps of an electronic device ambient temperature detection method provided in this application embodiment;

[0026] Figure 6 This is a schematic diagram of a diagnostic process for the cause of overheating in an electronic device, provided in an embodiment of this application.

[0027] Figure 7 This is a schematic diagram of the functional module composition of an electronic device ambient temperature detection device provided in an embodiment of this application;

[0028] Figure 8 This is a functional component relationship diagram of an electronic device provided in an embodiment of this application;

[0029] Figure 9 This is a schematic diagram of the hardware structure of another electronic device provided in an embodiment of this application. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0031] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a class, not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the objects before and after are in a "or" relationship.

[0032] The motor vibration waveform generation method provided by the embodiments of the present application will be described in detail below with reference to the accompanying drawings, specific embodiments and application scenarios.

[0033] Reference Figure 1 , Figure 1 is a brief implementation step flowchart of an electronic device ambient temperature detection method provided by the embodiments of the present application; as shown in Figure 1 , the method comprises:

[0034] In step S101, the resistance value of the thermistor arranged inside the electronic device is obtained, and the surface temperature of the electronic device is calculated according to the resistance value of the thermistor.

[0035] The electronic device ambient temperature detection method provided by the embodiments of the present application first obtains the surface temperature of the device, that is, the shell temperature of the device surface, through existing components and related methods; the resistance value change of the thermistor arranged inside the electronic device is obtained, and the temperature change around the thermistor is measured by using the linear fitting method.

[0036] Specifically, in an optional embodiment of the present application, the thermistor used is a negative temperature coefficient resistance (NTC, Negative Temperature Coefficient), which is a kind of thermosensitive material with the characteristic that the resistance decreases exponentially with the increase of temperature; in the structure of the electronic device, a plurality of NTCs are built-in and dispersed in various parts of the electronic device to obtain a plurality of different resistance value data, so that the measurement result is more accurate; the NTC is generally arranged in the area of the mainboard and the small cold plate of the electronic device, and is close to the vibration motor of the device in the component layout.

[0037] It is worth noting that in this process, the history change of a plurality of resistance values of a single NTC needs to be recorded continuously to obtain the surface temperature of the electronic device by using the calculation formula of the linear fitting method.

[0038] The surface temperature of the electronic device is calculated by collecting resistance value changes of multiple layout thermistors in a linear fitting manner; the NTCs arranged in dispersion can more uniformly monitor the shell temperature changes of the complete surface of the electronic device, and constantly update the monitored historical resistance values as calculation inputs in the calculation process, which can well ensure the continuity of the calculation result temperature changes and make the calculated temperature result more accurate.

[0039] In step S102, an electrical parameter of the electronic device is acquired, and a device heat consumption value of the electronic device is calculated according to the electrical parameter; the device heat consumption value is used to represent a heat value generated by the current heat effect of the components and elements in the electronic device in the use process.

[0040] As described in the method in step S101, the device surface temperature is calculated by measuring the resistance value changes of the thermistors, and the entire detection and calculation process is completed by the electronic device body, in which other components and elements of the electronic device also need to participate; for example, the data processing and calculation depend on the core processing unit of the electronic device, that is, the system on chip (SOC). In fact, in actual application, the electronic device may be in various use load scenarios in addition to the detection of temperature changes, in which the heating phenomenon caused by the power-on use of other components and elements is inevitable. In the embodiment of the present application, the heat value generated by the current heat effect of the components and elements of the electronic device in the use process is classified as device heat consumption, which is an interference factor of the environmental temperature detection.

[0041] In the embodiment of the present application, the scenarios of device heat consumption generated by the operation of the electronic device itself are roughly classified into two parts: device charging mode and device discharging mode; refer to Figure 2 , Figure 2 is a component and element layout connection relationship diagram of an electronic device provided by the embodiment of the present application; as shown in Figure 2 , in the conventional charging state, the charging power is accessed through the universal serial bus (USB) interface, I bus represents the charging current, and V bus represents the charging voltage; then the charging current flows to the charging chip for power parameter loading, and finally accesses the device battery for power storage; and in the discharging state, the electric energy is released from the charging chip to the battery to supply the device battery and the system to work normally, I bat is the battery current, and V bat is the battery voltage.

[0042] Since there is material resistance in the internal circuit of the components and elements, the current heat effect will be caused when the current passes through, thereby generating heat. Correctly evaluating the device heat consumption generated in the operation process of the electronic device is an important step to eliminate the influence of the device heat consumption on the shell surface temperature.

[0043] Step S103, according to the device heat consumption value, the surface temperature rise value of the electronic device is calculated; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device.

[0044] After step S102, after determining the device heat consumption caused by each component under the working state of the electronic device, the generated heat needs to be quantified as the change of temperature value, that is, the surface temperature rise of the electronic device; in the embodiment of the application, the recursive calculation is adopted, and the device surface temperature rise value at the previous time and the newly added device heat consumption at the current time are used to obtain the device surface temperature rise at the next time.

[0045] Specifically, referring to Figure 3 , Figure 3 is a time-temperature change statistical diagram of the device surface temperature rise value provided by the embodiment of the application; as Figure 3 indicated, the abscissa represents the specific time change, the ordinate represents the specific temperature value, Δt is the time interval, ΔT n represents the specific temperature rise at n*Δt, P n represents the device heat consumption value generated by the electronic device at time n; in Figure 3 , according to the direction indicated by the coordinate axis arrow, with the change of time interval Δt, the device heat consumption value and the corresponding surface temperature rise value at each time; it is worth mentioning that in this process, the initial temperature rise can be directly obtained by test data.

[0046] The change relationship between heat consumption and temperature is continuous, and in the time scale, the surface temperature rise value at the previous time and the device heat consumption value at the current time are superimposed to form the surface temperature rise value at the current time; at the same time, the natural entropy change of temperature follows the principle of time decay, and the time decay function e (-β*Δt) is introduced in the numerical calculation of the surface temperature rise to express the change relationship of the historical heat consumption temperature with time, which can more accurately obtain the change relationship of the surface temperature of the electronic device.

[0047] Step S104, according to the surface temperature and the surface temperature rise value, the ambient temperature of the electronic device is calculated.

[0048] After obtaining the surface temperature and the surface temperature rise value of the electronic device, the ambient temperature of the electronic device can be calculated; in the embodiment of the application, the processing idea adopted is to eliminate the influence of the electronic device heat consumption and the surface temperature rise value on the surface temperature on the basis of the measured surface temperature of the electronic device, so as to correctly measure the ambient temperature of the electronic device.

[0049] Referring to Figure 4 , Figure 4is a logic block diagram of an electronic device ambient temperature detection provided by the embodiment of the present application; starting from the first logic cycle n=0, device heat consumption value Pn is calculated in turn, cumulative temperature rise value AT is obtained from the device heat consumption value n Cumulative temperature rise value AT n eliminates the error influence of cumulative temperature rise value AT n from the shell temperature T sn , that is, the accurate ambient temperature T an can be obtained; the above logical steps correspond to the content in steps S101-S104 in the electronic device ambient temperature detection method provided by the embodiment of the present application; after obtaining the ambient temperature at the current moment, re-enter the next detection cycle, and perform the related method in steps S101-S104, the ambient temperature around the electronic device can be continuously calculated.

[0050] In summary, the electronic device ambient temperature detection method provided by the embodiment of the present application first obtains the surface temperature of the electronic device by reading the resistance value of the thermistor arranged inside the electronic device; then obtains the device heat consumption value of the electronic device through the electrical parameters of the electronic device; the device heat consumption value is the heat value generated by the components during use; the surface temperature rise value of the electronic device is calculated from the device heat consumption value; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device; finally, the ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device, and improve the detection accuracy of the ambient temperature.

[0051] Referring to Figure 5 , Figure 5 is a complete implementation step flowchart of the electronic device ambient temperature detection method provided by the embodiment of the present application; as shown in Figure 5 , the method comprises:

[0052] Step S201, obtaining the resistance value of the thermistor arranged inside the electronic device, and calculating the surface temperature of the electronic device according to the resistance value of the thermistor.

[0053] This step can be specifically referred to step S101, and the embodiment will not be described here.

[0054] In an optional embodiment, step S201 further comprises:

[0055] Sub-step S2011, obtaining the resistance value of the thermistor; the resistance value comprises: the current resistance value and the historical resistance value of the thermistor.

[0056] For the single NTC arranged inside the electronic device, the change of its resistance value is recorded continuously at fixed time intervals; at any time except the initial moment, the resistance value of the single NTC obtained includes the current resistance value and the historical resistance value.

[0057] Specifically, the specific resistance value at the current moment can be calculated through the internal integrated circuit parameters of the NTC (voltage across the NTC and current flowing through the NTC).

[0058] Sub-step S2012, constructing a resistance parameter matrix according to the resistance values, and constructing a fitting parameter matrix according to the first fitting parameters.

[0059] The first fitting parameter corresponds to the resistance value of the thermistor one by one; the fitting parameter is usually obtained by fitting the test data.

[0060] In an optional embodiment, the sub-step S2012 further comprises:

[0061] Sub-step S20121, sorting the current resistance value and the historical resistance value of the thermistor in time sequence to obtain a resistance value queue.

[0062] According to the acquisition order of the resistance value of the thermistor, the current resistance value and the historical resistance value are sorted in turn to obtain a resistance value queue.

[0063] For example, the single moment resistance value of a single thermistor is represented by , where the subscript m is used to represent the number of NTCs, and n is the number of historical moment readings of the NTC; specifically, as represents the historical resistance value of the 3rd NTC at the 2nd moment.

[0064] All resistance values of a single NTC are arranged in time sequence to form a resistance value queue:

[0065] Sub-step S20122, constructing a resistance parameter matrix according to the resistance value queue, the resistance parameter matrix being a first-order row matrix.

[0066] After obtaining the resistance value queue, it is constructed into a first-order linear matrix to participate in subsequent linear fitting calculation; the resistance value matrix is: It is a first-order row matrix composed of the resistance values of the first NTC at all historical moments.

[0067] Sub-step S20123, arranging the first fitting parameters according to the arrangement order of the resistance value of the thermistor to obtain a fitting parameter queue.

[0068] Similarly, for any resistance value, there is a corresponding first fitting parameter; the first fitting parameter is specifically a fitting coefficient, which is arranged in time sequence with the resistance value to obtain a fitting parameter queue: It is worth noting that the fitting parameters with the same upper index correspond to the resistance values, for example, in the above resistance value queue and the first fitting parameter queue, corresponding to the first fitting parameter of the resistance value of the first NTC resistor at the first time; corresponding to the first fitting parameter of the resistance value of the first NTC resistor at the second time.

[0069] Sub-step S20124, constructing a fitting parameter matrix according to the fitting parameter queue, the fitting parameter matrix being a first-order column matrix.

[0070] After obtaining the fitting parameter queue, it is also constructed into a first-order linear matrix to participate in subsequent linear fitting calculation; the fitting parameter matrix is: is a first-order column matrix, where the subscript T is a matrix transposition operator.

[0071] Sub-step S2013, obtaining the surface temperature of the electronic device according to the resistance parameter matrix, the fitting parameter matrix, and a second fitting parameter.

[0072] When a plurality of groups of historical resistance values of a plurality of NTCs are obtained, the surface temperature of the electronic device is calculated by the following formula:

[0073]

[0074] wherein, T s is the calculated surface temperature of the electronic device, T is the resistance value of the NTC, a is a coefficient, C is a constant, the subscript m is the number of NTCs, and the superscript n is the number of historical resistance values of the same NTC; a and C are usually obtained by inverse fitting according to test data.

[0075] In an optional embodiment, the sub-step S2013 further includes:

[0076] Sub-step S20131, obtaining the product result of the resistance parameter matrix and the fitting parameter matrix.

[0077] Referring to the content described in sub-step S2013, in the fitting calculation formula, represents the operation result of all resistance values of a single NTC and a fitting parameter; wherein, the calculation result of a first-order row matrix multiplied by a first-order column matrix is a specific numerical value,

[0078] ​​In sub-step S20132, the sum of the product result and the second fitting parameter is obtained as the value of the surface temperature of the electronic device.

[0079] After adding the product result of all NTCs and the fitting parameter matrix, the sum of the second fitting parameter is obtained, and the sum result is taken as the specific value of the surface temperature of the electronic device.

[0080] In step S202, the electrical parameter of the electronic device is obtained, and the device heat consumption value of the electronic device is calculated according to the electrical parameter; the device heat consumption value is used to represent the heat value generated by the current heat effect of the components in the use process of the electronic device.

[0081] This step can be specifically referred to the above step S102, and will not be described here in this embodiment.

[0082] In an optional embodiment, the step S202 further includes:

[0083] In sub-step S2021, the device heat consumption value is calculated according to the electrical parameter. The electrical parameter includes one or more of the charging voltage value and the charging current value of the electronic device, the cell current value and the cell voltage value of the electronic device, the front-end impedance value of the charging cell of the electronic device, the cell impedance value of the electronic device, and the ratio of the input current value to the output current value of the charging chip of the electronic device.

[0084] Referring to Figure 2 , Figure 2 In the component layout connection relationship diagram of the electronic device shown in the figure, the circuit resistance value from the USB inlet to the charging cell is uniformly represented as the front-end impedance R1, and the current ratio A is used to represent the ratio of the input current to the output current of the charging current; the resistance value inside the cell is represented as the cell impedance R2.

[0085] The heat consumption value of the electronic device is calculated according to the following formula:

[0086]

[0087] Wherein, P is the heat consumption value, Ibus is the charging current, Vbus is the charging voltage, Ibat is the cell current of the electronic device, Vbat is the cell voltage of the electronic device, R1 is the front-end impedance of the charging cell, R2 is the cell impedance, and A is the ratio of the input current to the output current of the charging cell.

[0088] It is worth mentioning that in the discharge state, the input current value and the voltage value of the charging chip are both 0, and at this moment the current ratio A of the charging chip is also 0. At this moment, only the voltage and current of the battery of the electronic device are considered, and since the current flow direction of the battery in the discharge mode is opposite to that in the charging mode, the flow direction of Ibat is opposite, which is represented as a negative current value in the reference direction, and the calculated device heat consumption P is also positive.

[0089] In step S203, a surface temperature rise value of the electronic device is calculated according to the device heat consumption value; the surface temperature rise value is a temperature rise amount caused by the device heat consumption value to the electronic device.

[0090] This step can be specifically referred to the above step S103, and will not be described here in this embodiment.

[0091] In an optional embodiment, the step S203 further includes:

[0092] In sub-step S2031, a historical surface temperature rise value of the electronic device is obtained.

[0093] The historical surface temperature rise value is the product of the surface temperature rise value of the electronic device at the previous moment and a time decay function; the time decay function is an exponential function with a natural logarithm as a base number, and the exponent of the natural logarithm is the product of a decay coefficient and a unit time interval.

[0094] The surface temperature rise value of the electronic device is calculated by the following formula:

[0095]

[0096] Wherein, ΔT n+1 is the temperature rise value at (n+1)*Δt, ΔT n is the temperature rise value at n*Δt, β is a coefficient, Δt is a time interval, A is used to represent the heat dissipation ability of the device itself, and P is the device heat consumption.

[0097] In sub-step S2032, a current heat consumption temperature rise value of the electronic device is calculated according to the device heat consumption value.

[0098] According to the calculation formula described in sub-step S2031, the current heat consumption temperature rise value of the electronic device is calculated according to the device heat consumption value.

[0099] In an optional embodiment, the sub-step S2032 further includes:

[0100] In substep S20321, a ratio of the device heat consumption value and a heat dissipation coefficient value of the electronic device is obtained, and a difference between 1 and a time decay function is obtained, and a multiplication result of the two is obtained as a current heat consumption temperature rise value of the electronic device; wherein the time decay function is an exponential function with a natural logarithm as a base, and an index of the natural logarithm is a multiplication result of a decay coefficient and a unit time interval.

[0101] According to the calculation formula in substep S2031, the current heat consumption temperature rise value can be roughly divided into two parts; wherein represents a numerical change of the surface temperature rise caused by the device heat consumption of the electronic device at the current time; e (-β*Δt) is a time decay function, and a value thereof decreases with an increase of an absolute value of time Δt.

[0102] In substep S2033, a summation result of the current heat consumption temperature rise value and a historical surface temperature rise value is obtained as a current surface temperature rise value of the electronic device.

[0103] After the summation of the current heat consumption temperature rise value and the historical surface temperature rise value, the current surface temperature rise value of the electronic device can be obtained; since the change relationship between the heat consumption and the temperature is continuous, and in a time scale, the surface temperature rise value at a previous time and the device heat consumption value at the current time are superimposed to form the surface temperature rise value at the current time.

[0104] In step S204, an ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value.

[0105] This step can be specifically referred to the above step S104, and details are not described herein.

[0106] Optionally, the step S204 further includes:

[0107] In substep S2041, a difference between the surface temperature and the surface temperature rise value of the electronic device is obtained as the ambient temperature around the electronic device.

[0108] According to the surface temperature value of the electronic device obtained in step S201 and the surface temperature rise value of the electronic device obtained in step S203, the ambient temperature around the electronic device can be obtained.

[0109] The two results are subtracted as follows:

[0110] T a = T s - ΔT

[0111] wherein T a is the ambient temperature around the electronic device, T s is the surface temperature of the electronic device, and ΔT is the surface temperature rise of the electronic device; and the final result T aThe ambient temperature of the environment surrounding the electronic device.

[0112] In step S205, the cause of the surface temperature rise of the electronic device is determined according to the surface temperature rise value of the electronic device and the change result of the ambient temperature of the environment surrounding the electronic device.

[0113] According to the surface temperature rise value of the electronic device and the change result of the ambient temperature of the environment surrounding the electronic device, the specific cause of the surface temperature rise of the electronic device can be determined, so that the temperature problem of the electronic device can be improved through subsequent targeted operation.

[0114] In step S206, if the surface temperature rise value of the electronic device is greater than or equal to the first device temperature threshold, and the ambient temperature of the environment surrounding the electronic device is less than the first ambient temperature threshold, it is determined that the surface temperature rise of the electronic device is caused by the device heat consumption of the electronic device.

[0115] Referring to Figure 6 , Figure 6 is a schematic diagram of a heat cause diagnosis process of an electronic device provided by an embodiment of the present application; in the case that the surface temperature (shell temperature) of the electronic device exceeds a threshold value, it is determined that the electronic device currently has a heat problem.

[0116] As Figure 6 shown in the content, in an embodiment, the ambient temperature of the environment where the electronic device is located is 25 degrees Celsius; starting from the foreground application, the relationship between each temperature state and the threshold value is sequentially judged, and for the surface shell temperature of the electronic device: in the embodiment of the present application, it is considered that the shell temperature is higher than 37℃ in the light load discharging state, higher than 39℃ in the light load charging state, or higher than 40℃ in the heavy load discharging state, and higher than 42℃ in the heavy load charging state; it is considered that the shell temperature exceeds the threshold value; otherwise, it is considered that the electronic device does not have a heat problem.

[0117] After the shell temperature exceeds the threshold value, in the actual judgment process, it is first judged whether the temperature change of the electronic device is caused by the environment, in the embodiment of the present application, it is considered that the average room temperature is maintained at 25℃ in the normal state, if the ambient temperature exceeds this temperature value, it is determined that the surface temperature rise of the electronic device is caused by the environment; otherwise, it is considered that the surface temperature rise of the electronic device is caused by the device heat consumption itself.

[0118] Further, if the charging heat consumption is greater than the threshold value, it indicates that the temperature source of the device heat consumption is caused by charging, in the embodiment of the present application, when the charging power consumption is higher than 3W in the screen-off state, and the power is higher than 500mW in the screen-on charging state, it is considered that the charging heat consumption is greater than the threshold value, and the heat cause is attributed to the charging heating, which can be limited by simply disconnecting the charging to limit the charging heat.

[0119] In addition, if the overall power consumption of the device is greater than the threshold, it indicates that the device heat consumption is not caused by charging, but by the power consumption of other components of the device; in the embodiments of the present application, it is considered that the overall power consumption of the device is higher than 720mA in the light load mode or higher than 900mA in the heavy load mode, and it is determined that the overall power consumption of the device has exceeded the power consumption threshold; specifically, any one of the following conditions is considered as the power consumption of the corresponding working module exceeding the power consumption threshold: the screen power consumption is greater than 200 milliampere (mA, milliampere), the network power consumption is greater than 150mA, the background power consumption is greater than 50mA, or the foreground power consumption is higher than 300mA in the light load mode or higher than 500mA in the heavy load mode; in particular, after determining that the foreground power consumption exceeds the threshold, it is also necessary to determine whether the foreground load of the device is normal; if the foreground load is normal, it is determined that the heat source is normal foreground heating, otherwise it indicates that the heat source is abnormal foreground heating. The heat threshold standard of the component power consumption is not limited in the embodiments of the present application, and the developer can adjust it according to the actual situation; it is worth noting that if the overall power consumption of the electronic device is greater than the threshold, it indicates that the heat dissipation capacity of the electronic device itself is poor.

[0120] In an optional embodiment, the step S206 further comprises:

[0121] In the case of determining that the surface temperature rise of the electronic device is caused by the device heat consumption of the electronic device, the method further comprises:

[0122] Sub-step S2061, reducing the working frequency of the battery of the electronic device until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment.

[0123] In practical applications, the working frequency of the device battery can be reduced to reduce the operation load of the battery for data processing, thereby reducing the device heat consumption caused thereby, finally controlling the reduction of the surface temperature rise value, and preventing the continuous accumulation of heat from causing the continuous rise of the surface of the device shell.

[0124] Sub-step S2062, reducing the working power supply power of the battery of the electronic device until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment.

[0125] Similarly, the power consumption upper limit in the working state can also be controlled by limiting the power consumption of the battery of the electronic device, thereby reducing the device heat consumption caused thereby, finally controlling the reduction of the surface temperature rise value, and preventing the continuous accumulation of heat from causing the continuous rise of the surface of the device shell.

[0126] After limiting the power supply power consumption of the device battery, the system will immediately limit the working power consumption of other components of the device, and comprehensively reduce the overall power consumption of the electronic device.

[0127] Step S207, if the surface temperature rise value of the electronic device is less than the first device temperature threshold, and the ambient temperature of the electronic device is greater than or equal to the first ambient temperature threshold, it is determined that the surface temperature rise of the electronic device is caused by the ambient temperature in which the electronic device is located.

[0128] If the ambient temperature exceeds the threshold value in the electronic device heat generation reason diagnosis process, it indicates that the main reason for the surface temperature rise of the current electronic device is the environment in which it is located. Since the ambient temperature does not belong to the controllable factor category of the electronic device itself, in this scenario, a clarification explanation is usually used to remind the user to take appropriate measures to control the temperature of the environment.

[0129] In summary, the electronic device ambient temperature detection method provided by the embodiments of the present application first obtains the surface temperature of the electronic device by reading the resistance value of the thermistor arranged inside the electronic device, and then obtains the device heat consumption value of the electronic device through the electrical parameters of the electronic device. The device heat consumption value is the heat value generated by the components during use. The surface temperature rise value of the electronic device is calculated from the device heat consumption value. The surface temperature rise value is the temperature rise caused by the device heat consumption value. Finally, the ambient temperature around the electronic device is calculated based on the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device, and improve the detection accuracy of the ambient temperature. Then, the main heating reason of the surface temperature of the electronic device is clarified according to the detection result, so as to take responsive measures to control the temperature and protect the hardware safety of the electronic device and the personal safety of the user.

[0130] Reference Figure 7 , Figure 7 is a functional module device composition schematic diagram of an electronic device ambient temperature detection device provided by the embodiments of the present application. As shown in Figure 7 , the device comprises:

[0131] The surface temperature determination module S301 is configured to obtain the resistance value of the thermistor arranged inside the electronic device, and calculate the surface temperature of the electronic device according to the resistance value of the thermistor.

[0132] Optionally, the surface temperature determination module S301 further comprises:

[0133] The resistance value acquisition sub-module is configured to obtain the resistance value of the thermistor. The resistance value includes the current resistance value and the historical resistance value of the thermistor.

[0134] The calculation matrix construction sub-module is configured to construct a resistance parameter matrix according to the resistance value, and construct a fitting parameter matrix according to the first fitting parameter.

[0135] Optionally, the computing matrix constructing submodule further comprises:

[0136] The resistance value queue constructing unit is configured to sort the current resistance value and the historical resistance value of the thermistor in chronological order to obtain a resistance value queue.

[0137] The resistance parameter matrix constructing unit is configured to construct a resistance parameter matrix according to the resistance value queue, the resistance parameter matrix being a first-order row matrix.

[0138] The fitting parameter queue constructing unit is configured to arrange the first fitting parameter according to the arrangement order of the resistance value of the thermistor to obtain a fitting parameter queue.

[0139] The fitting parameter matrix constructing unit is configured to construct a fitting parameter matrix according to the fitting parameter queue, the fitting parameter matrix being a first-order column matrix.

[0140] The surface temperature computing submodule is configured to obtain the surface temperature of the electronic device according to the resistance parameter matrix, the fitting parameter matrix and the second fitting parameter.

[0141] Optionally, the surface temperature computing submodule further comprises:

[0142] The matrix product operation unit is configured to obtain a product result of the resistance parameter matrix and the fitting parameter matrix.

[0143] The surface temperature computing unit is configured to obtain a summation result of the product result and the second fitting parameter, and take the summation result as the value of the surface temperature of the electronic device.

[0144] The device heat consumption value determining module S320 is configured to obtain an electrical parameter of the electronic device, and calculate a device heat consumption value of the electronic device according to the electrical parameter; the device heat consumption value is used to represent the heat value generated by the current heat effect of the components in the use process of the electronic device.

[0145] The device heat consumption value computing submodule is configured to calculate the device heat consumption value according to the electrical parameter.

[0146] The surface temperature rise value determining module S303 is configured to calculate a surface temperature rise value of the electronic device according to the device heat consumption value; the surface temperature rise value is the temperature rise amount caused by the device heat consumption value to the electronic device.

[0147] The historical surface temperature rise value obtaining submodule is configured to obtain a historical surface temperature rise value of the electronic device.

[0148] The current heat consumption value computing submodule is configured to calculate a current heat consumption temperature rise value of the electronic device according to the device heat consumption value.

[0149] Optionally, the current heat consumption value calculation sub-module further comprises:

[0150] A current heat consumption temperature rise value calculation unit is configured to obtain a multiplication result of a ratio of the device heat consumption value and a heat dissipation capability coefficient value of the electronic device and a difference between 1 and a time attenuation function, and obtain a current heat consumption temperature rise value of the electronic device.

[0151] A current surface temperature rise value calculation sub-module is configured to obtain a summation result of the current heat consumption temperature rise value and a historical surface temperature rise value, and obtain a current surface temperature rise value of the electronic device.

[0152] An ambient temperature determination module S304 is configured to calculate an ambient temperature around the electronic device according to the surface temperature and the surface temperature rise value.

[0153] Optionally, the ambient temperature determination module S304 further comprises:

[0154] An ambient temperature determination sub-module is configured to obtain a difference between the surface temperature of the electronic device and the surface temperature rise value, and obtain the ambient temperature around the electronic device.

[0155] Optionally, the apparatus further comprises:

[0156] A surface temperature rise determination module is configured to determine a cause of a surface temperature rise of the electronic device according to a change result of the surface temperature rise value of the electronic device and the ambient temperature around the electronic device.

[0157] A device state adjustment module is configured to adjust a working state of the electronic device after determining that the surface temperature rise of the electronic device is caused by a device heat consumption of the electronic device.

[0158] Optionally, the device state adjustment module further comprises:

[0159] A frequency adjustment sub-module is configured to reduce a working frequency of a battery cell of the electronic device until the surface temperature rise value of the electronic device is equal to or less than a surface temperature rise value of the electronic device at a previous time.

[0160] A power consumption adjustment sub-module is configured to reduce a working power supply power of the battery cell of the electronic device until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous time.

[0161] To sum up, the electronic device environment temperature detection device provided in the embodiment of the application first obtains the surface temperature of the electronic device by reading the resistance value of the thermistor arranged in the electronic device and calculating; then obtains the device heat consumption value of the electronic device through the electrical parameter of the electronic device; the device heat consumption value is the heat value generated by the components in the use process of the electronic device; the surface temperature rise value of the electronic device is calculated from the device heat consumption value; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device; finally, the ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device, improve the detection accuracy of the ambient temperature; then, the main heating reason of the surface temperature of the electronic device is clarified according to the detection result, and the corresponding solution measure is taken, the temperature is controlled through the device state adjustment, and the hardware safety of the electronic device and the personal safety of the user are ensured.

[0162] The electronic device environment temperature detection device in the embodiment of the application can be an electronic device or a component in the electronic device, such as an integrated circuit or a chip. The electronic device can be a terminal or other devices except the terminal. For example, the electronic device can be a mobile phone, a tablet computer, a notebook computer, a palm computer, a vehicle-mounted electronic device, a mobile Internet device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook or a personal digital assistant (PDA), and the like. The electronic device can also be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine or a self-service machine, and the like. The embodiment of the application is not limited in this regard.

[0163] The electronic device environment temperature detection device in the embodiment of the application can be a device with an operating system. The operating system can be an Android operating system, an IOS operating system or other possible operating systems. The embodiment of the application is not limited in this regard.

[0164] The electronic device environment temperature detection device provided in the embodiment of the application can realize 1 to Figure 6 The method embodiment realizes each process, and details are not repeated here to avoid repetition.

[0165] Optionally, as shown in Figure 8 The embodiment of the present application also provides an electronic device M00, including a processor M01 and a memory M02, the memory M02 stores programs or instructions which can run on the processor M01, when the programs or instructions are executed by the processor M01, each step of the above-mentioned electronic device ambient temperature detection method embodiment is implemented, and the same technical effects can be achieved, to avoid repetition, which will not be repeated here.

[0166] It should be noted that the electronic device in the embodiment of the present application includes the above-mentioned mobile electronic device and non-mobile electronic device.

[0167] Figure 9 To realize the hardware structure of an electronic device in the embodiment of the present application.

[0168] The electronic device 1000 includes but is not limited to: a radio frequency unit 1001, a network module 1002, an audio output unit 1003, an input unit 1004, a sensor 1005, a display unit 1006, a user input unit 1007, an interface unit 1008, a memory 1009, and a processor 1010, etc.

[0169] Those skilled in the art can understand that the electronic device 1000 can also include a power supply (such as a battery) for powering each component, and the power supply can be logically connected to the processor 1010 through a power management system, so as to realize the functions of managing charging, discharging, and power consumption management through the power management system. Figure 9 The electronic device structure shown in the above-mentioned embodiment does not constitute a limitation on the electronic device, and the electronic device can include more or fewer components than the diagram, or combine certain components, or different component arrangements, which will not be repeated here.

[0170] The processor 101 is configured to: obtain a resistance value of a thermistor arranged inside the electronic device, and calculate a surface temperature of the electronic device according to the resistance value of the thermistor;

[0171] Obtain an electrical parameter of the electronic device, and calculate a device heat consumption value of the electronic device according to the electrical parameter; the device heat consumption value is used to represent a heat value generated by the current heat effect of the components in the electronic device during use;

[0172] According to the device heat consumption value, a surface temperature rise value of the electronic device is calculated; the surface temperature rise value is a temperature rise amount caused by the device heat consumption value to the electronic device;

[0173] According to the surface temperature and the surface temperature rise value, the ambient temperature around the electronic device is calculated.

[0174] The method for detecting the ambient temperature of an electronic device provided in the embodiments of the present application first obtains the surface temperature of the electronic device by reading the resistance value of a thermistor arranged inside the electronic device and by calculation; then obtains the device heat consumption value of the electronic device by the electrical parameters of the electronic device; the device heat consumption value is the heat value generated by the components of the electronic device during use; calculates the surface temperature rise value of the electronic device from the device heat consumption value; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device; and finally obtains the ambient temperature around the electronic device according to the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device and improve the detection accuracy of the ambient temperature.

[0175] Optionally, the processor 1010 is further configured to sort the current resistance value and the historical resistance value of the thermistor in time sequence to obtain a resistance value queue;

[0176] construct a resistance parameter matrix according to the resistance value queue, the resistance parameter matrix being a first-order row matrix;

[0177] arrange the first fitting parameter according to the arrangement order of the resistance value of the thermistor to obtain a fitting parameter queue;

[0178] construct a fitting parameter matrix according to the fitting parameter queue, the fitting parameter matrix being a first-order column matrix.

[0179] Optionally, the processor 1010 is further configured to obtain the product result of the resistance parameter matrix and the fitting parameter matrix;

[0180] obtain the summation result of the product result and a second fitting parameter, and take the summation result as the value of the surface temperature of the electronic device.

[0181] Optionally, the processor 1010 is further configured to calculate the heat consumption value of the electronic device according to the following formula:

[0182]

[0183] wherein P is the heat consumption value, Ibus is the charging current, Vbus is the charging voltage, Ibat is the cell current of the electronic device, Vbat is the cell voltage of the electronic device, R1 is the front-end impedance of the charging cell, R2 is the cell impedance, and A is the ratio of the input current to the output current of the charging cell.

[0184] Optionally, the processor 1010 is further configured to obtain the historical surface temperature rise value of the electronic device;

[0185] calculate the current heat consumption temperature rise value of the electronic device according to the device heat consumption value;

[0186] The sum of the current heat consumption temperature rise value and the historical surface temperature rise value is obtained to obtain the current surface temperature rise value of the electronic device.

[0187] Optionally, the processor 1010 is further configured to obtain the product of the ratio of the device heat consumption value and the heat dissipation capability coefficient value of the electronic device and the difference between 1 and the time decay function, to obtain the current heat consumption temperature rise value of the electronic device.

[0188] The time decay function is an exponential function with a natural logarithm as a base number, and the exponent of the natural logarithm is the product of the decay coefficient and the unit time interval.

[0189] Optionally, the processor 1010 is further configured to obtain the difference between the surface temperature of the electronic device and the surface temperature rise value to obtain the ambient temperature around the electronic device.

[0190] Optionally, the processor 1010 is further configured to determine the cause of the surface temperature rise of the electronic device according to the change result of the surface temperature rise value of the electronic device and the ambient temperature around the electronic device.

[0191] If the surface temperature rise value of the electronic device is greater than or equal to the first device temperature threshold value, and the ambient temperature around the electronic device is less than the first ambient temperature threshold value, it is determined that the surface temperature rise of the electronic device is caused by the device heat consumption of the electronic device.

[0192] If the surface temperature rise value of the electronic device is less than the first device temperature threshold value, and the ambient temperature around the electronic device is greater than or equal to the first ambient temperature threshold value, it is determined that the surface temperature rise of the electronic device is caused by the ambient temperature of the electronic device.

[0193] Optionally, the processor 1010 is further configured to reduce the working frequency of the battery core of the electronic device until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment.

[0194] Optionally, the processor 1010 is further configured to reduce the working supply power of the battery core of the electronic device until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment.

[0195] The electronic device environment temperature detection method provided by the embodiment of the present application first obtains the surface temperature of the electronic device by reading the resistance value of the thermistor arranged inside the electronic device and by calculation; then obtains the device heat consumption value of the electronic device through the electrical parameters of the electronic device; the device heat consumption value is the heat value generated by the components in the use process of the electronic device; the surface temperature rise value of the electronic device is calculated from the device heat consumption value; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device; finally, the ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value, so as to offset the change of the thermistor caused by the self-heating of the electronic device, improve the detection accuracy of the ambient temperature; then, the main heating reason of the surface temperature of the electronic device is clarified according to the detection result, so as to take responsive measures to control the temperature, and guarantee the hardware safety of the electronic device and the personal safety of the user.

[0196] It should be understood that, in the embodiment of the present application, the input unit 1004 can include a graphics processor (GPU) 10041 and a microphone 10042. The graphics processor 10041 processes image data of a still picture or a video obtained by an image capture device (such as a camera) in a video capture mode or an image capture mode. The display unit 1006 can include a display panel 10061, which can be configured in the form of a liquid crystal display, an organic light-emitting diode, etc. The user input unit 1007 includes at least one of a touch panel 10071 and other input devices 10072. The touch panel 10071 is also called a touch screen. The touch panel 10071 can include two parts of a touch detection device and a touch controller. The other input devices 10072 can include, but are not limited to, a physical keyboard, function keys (such as volume control keys, on-off keys, etc.), a trackball, a mouse, an operating rod, and the like, which will not be described here.

[0197] The memory 1009 can be used to store software programs and various data. The memory 1009 can mainly include a first storage area storing programs or instructions and a second storage area storing data, wherein the first storage area can store an operating system, application programs or instructions required by at least one function (such as a sound playing function, an image playing function, etc.), etc. In addition, the memory 1009 can include a volatile memory or a non-volatile memory, or the memory 1009 can include both volatile and non-volatile memories. The non-volatile memory can be a Read-Only Memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an Electrically EPROM (EEPROM), or a flash memory. The volatile memory can be a Random Access Memory (RAM), a Static RAM (SRAM), a Dynamic RAM (DRAM), a Synchronous DRAM (SDRAM), a Double Data Rate SDRAM (DDR SDRAM), an Enhanced SDRAM (ESDRAM), a Synch link DRAM (SLDRAM), and a Direct Rambus RAM (DRRAM). The memory 1009 in the embodiments of the present application includes but is not limited to these and any other suitable types of memories.

[0198] The processor 1010 can include one or more processing units; optionally, the processor 1010 integrates an application processor and a modem processor, wherein the application processor mainly processes operations related to an operating system, a user interface, and an application program, and the modem processor mainly processes wireless communication signals, such as a baseband processor. It can be understood that the above-mentioned modem processor can also not be integrated into the processor 1010.

[0199] The embodiments of the present application also provide a readable storage medium, the readable storage medium stores programs or instructions, the programs or instructions are executed by a processor to realize each process of the above-mentioned electronic device ambient temperature detection method embodiments, and the same technical effects can be achieved. To avoid repetition, details are not described here.

[0200] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes a computer readable storage medium, such as a computer readable only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0201] The embodiment of the present application further provides a chip, which comprises a processor and a communication interface, the communication interface is coupled with the processor, the processor is used for running programs or instructions to realize each process of the above-mentioned electronic device environment temperature detection method embodiment and achieve the same technical effects. To avoid repetition, details are not described here.

[0202] It should be understood that the chip mentioned in the embodiment of the present application can also be referred to as a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0203] The embodiment of the present application provides a computer program product, which is stored in a storage medium, and the program product is executed by at least one processor to realize each process of the above-mentioned electronic device environment temperature detection method embodiment and achieve the same technical effects. To avoid repetition, details are not described here.

[0204] It should be noted that in this paper, the term "including", "containing" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the method and device in the embodiment of the present application is not limited to the order of performing the functions shown or discussed, but also includes performing the functions in a substantially simultaneous manner or in the opposite order, for example, the described method can be performed in an order different from the described order, and various steps can also be added, omitted or combined. In addition, the features described with reference to some examples can be combined in other examples.

[0205] Through the above description of the embodiments, those skilled in the art can clearly understand that the above-mentioned example methods can be realized by means of software and a necessary general hardware platform, and of course, can also be realized by hardware, but in many cases, the former is a better embodiment. Based on such understanding, the technical solutions of the present application can be embodied in the form of a computer software product in essence or in the form of a part that contributes to the prior art, which is stored in a storage medium (such as a ROM / RAM, a magnetic disc, an optical disc), and includes a plurality of instructions for causing a terminal (which can be a mobile phone, a computer, a server, or a network device, etc.) to execute the methods described in the various embodiments of the present application.

[0206] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above-mentioned specific embodiments, and the above-mentioned specific embodiments are only illustrative and not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims.

Claims

1. An ambient temperature detection method of an electronic device, characterized by, The method comprises: obtaining the resistance value of the thermistor arranged inside the electronic device, and calculating the surface temperature of the electronic device according to the resistance value of the thermistor; obtaining the electrical parameter of the electronic device, and calculating the device heat consumption value of the electronic device according to the electrical parameter; the device heat consumption value is used to represent the heat value generated by the current heat effect of the components in the electronic device during use; calculating the surface temperature rise value of the electronic device according to the device heat consumption value; the surface temperature rise value is the temperature rise caused by the device heat consumption value to the electronic device; calculating the ambient temperature around the electronic device according to the surface temperature and the surface temperature rise value; the surface temperature of the electronic device is obtained according to the resistance value of the thermistor, which comprises: obtaining the resistance value of the thermistor; the resistance value comprises: the current resistance value and the historical resistance value of the thermistor; constructing a resistance parameter matrix according to the resistance value, and constructing a fitting parameter matrix according to a first fitting parameter; obtaining the surface temperature of the electronic device according to the resistance parameter matrix, the fitting parameter matrix and a second fitting parameter; the first fitting parameter corresponds to the resistance value of the thermistor one by one; the resistance parameter matrix is constructed according to the resistance value, and the fitting parameter matrix is constructed according to the first fitting parameter, which comprises: sorting the current resistance value and the historical resistance value of the thermistor in time sequence to obtain a resistance value queue; constructing a resistance parameter matrix according to the resistance value queue; the resistance parameter matrix is a first-order row matrix; arranging the first fitting parameter according to the arrangement order of the resistance value of the thermistor to obtain a fitting parameter queue; constructing a fitting parameter matrix according to the fitting parameter queue; the fitting parameter matrix is a first-order column matrix.

2. The method of claim 1, wherein, obtaining the surface temperature of the electronic device according to the resistance parameter matrix, the fitting parameter matrix and a second fitting parameter, which comprises: obtaining the product result of the resistance parameter matrix and the fitting parameter matrix; obtaining the summation result of the product result and the second fitting parameter, and taking the summation result as the value of the surface temperature of the electronic device.

3. The method of claim 1, wherein, the electrical parameter comprises: one or more of the charging voltage value and the charging current value of the electronic device, the cell current value and the cell voltage value of the electronic device, the front-end impedance value of the charging cell of the electronic device, the cell impedance value of the electronic device, and the ratio of the input current value to the output current value of the charging chip of the electronic device; the heat consumption value of the electronic device is calculated according to the following formula: wherein, P is the heat consumption value, Ibus is the charging current, Vbus is the charging voltage, Ibat is the cell current of the electronic device, Vbat is the cell voltage of the electronic device, R1 is the front-end impedance of the charging cell, R2 is the cell impedance, and A is the ratio of the input current to the output current of the charging cell.

4. The method of claim 1, wherein, calculating the surface temperature rise value of the electronic device according to the device heat consumption value, which comprises: obtaining the historical surface temperature rise value of the electronic device; calculating the current heat consumption temperature rise value of the electronic device according to the device heat consumption value; The sum of the current heat consumption temperature rise value and the historical surface temperature rise value is obtained, to obtain a current surface temperature rise value of the electronic device.

5. The method of claim 4, wherein, The current heat consumption temperature rise value of the electronic device is calculated according to the device heat consumption value, including: The product of the ratio of the device heat consumption value and the heat dissipation capability coefficient value of the electronic device and the difference between 1 and the time decay function is obtained, to obtain the current heat consumption temperature rise value of the electronic device; The time decay function is an exponential function with a natural logarithm as a base number, and the exponent of the natural logarithm is the product of the decay coefficient and the unit time interval.

6. The method of claim 4, wherein, The historical surface temperature rise value is the product of the surface temperature rise value of the electronic device at the previous moment and the time decay function; The time decay function is an exponential function with a natural logarithm as a base number, and the exponent of the natural logarithm is the product of the decay coefficient and the unit time interval.

7. The method according to any one of claims 1 to 6, characterized in that, The ambient temperature around the electronic device is calculated according to the surface temperature and the surface temperature rise value, including: The difference between the surface temperature of the electronic device and the surface temperature rise value is obtained, to obtain the ambient temperature around the electronic device.

8. The method of claim 1, wherein, The method further includes: According to the change result of the surface temperature rise value of the electronic device and the ambient temperature around the electronic device, the cause of the surface temperature rise of the electronic device is determined; If the surface temperature rise value of the electronic device is greater than or equal to the first device temperature threshold value, and the ambient temperature around the electronic device is less than the first ambient temperature threshold value, it is determined that the surface temperature rise of the electronic device is caused by the device heat consumption of the electronic device; If the surface temperature rise value of the electronic device is less than the first device temperature threshold value, and the ambient temperature around the electronic device is greater than or equal to the first ambient temperature threshold value, it is determined that the surface temperature rise of the electronic device is caused by the ambient temperature in which the electronic device is located.

9. The method of claim 8, wherein, In the case where it is determined that the surface temperature rise of the electronic device is caused by the device heat consumption of the electronic device, the method further includes: The working frequency of the battery core of the electronic device is reduced until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment; The working power supply power of the battery core of the electronic device is reduced until the surface temperature rise value of the electronic device is equal to or less than the surface temperature rise value of the electronic device at the previous moment.

10. An ambient temperature detection device for electronic equipment, characterized in that, The device includes: A surface temperature determination module is configured to obtain the resistance value of a thermistor arranged inside an electronic device, and calculate the surface temperature of the electronic device according to the resistance value of the thermistor; A device heat consumption value determination module is configured to obtain the electrical parameters of the electronic device, and calculate the device heat consumption value of the electronic device according to the electrical parameters; the device heat consumption value is used to represent the heat value generated by the current heat effect of components during use of the electronic device; A surface temperature rise value determination module is configured to calculate the surface temperature rise value of the electronic device according to the device heat consumption value; the surface temperature rise value is the temperature rise amount caused by the device heat consumption value to the electronic device; An ambient temperature determination module is configured to calculate the ambient temperature around the electronic device according to the surface temperature and the surface temperature rise value. The surface temperature of the electronic device is obtained according to the resistance value of the thermistor, and the method comprises the steps of: obtaining the resistance value of the thermistor; the resistance value comprises the current resistance value and the historical resistance value of the thermistor; constructing a resistance parameter matrix according to the resistance value and constructing a fitting parameter matrix according to the first fitting parameter; obtaining the surface temperature of the electronic device according to the resistance parameter matrix, the fitting parameter matrix and the second fitting parameter; the first fitting parameter corresponds to the resistance value of the thermistor one by one; the step of constructing the resistance parameter matrix according to the resistance value and constructing the fitting parameter matrix according to the first fitting parameter comprises: sorting the current resistance value and the historical resistance value of the thermistor in time sequence to obtain a resistance value queue; constructing the resistance parameter matrix according to the resistance value queue, wherein the resistance parameter matrix is a first-order row matrix; arranging the first fitting parameter in the arrangement order of the resistance value of the thermistor to obtain a fitting parameter queue; constructing the fitting parameter matrix according to the fitting parameter queue, wherein the fitting parameter matrix is a first-order column matrix.

11. An electronic device, comprising: The electronic device comprises a processor and a memory, wherein the memory stores programs or instructions that can be run on the processor, and the programs or instructions are executed by the processor to realize the steps of the ambient temperature detection method of the electronic device according to any one of claims 1-8.

12. A readable storage medium, characterized by, The readable storage medium stores programs or instructions, and the programs or instructions are executed by the processor to realize the steps of the ambient temperature detection method of the electronic device according to any one of claims 1-8.

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