Surface treatment apparatus and surface treatment method

Abstract

The surface treatment apparatus (10) has a workpiece conveyance unit (40) (distribution mechanism) that houses a workbench (31, 32) (mounting mechanism) on which a workpiece (W) is placed into a chamber (20) (housing unit). Next, the workbench rotation shafts (31b, 32b) (rotation mechanism) and the mounting member rotation shafts (31c, 32c) (rotation mechanism) rotate the workpiece (W) in a predetermined rotation pattern to face the plasma generation device (21) (surface treatment mechanism) or the sputtering device (22, 23) (surface treatment mechanism) with the workpiece mounting portion (30) housed in the chamber.

Description

Technical Field

[0001] The present invention relates to a surface treatment apparatus and a surface treatment method for performing surface treatment such as irradiating a workpiece with plasma or the like. Background Art

[0002] Conventionally, there have been known a surface treatment apparatus for cleaning or modifying the surface of a workpiece by using plasma to form a metal catalyst layer or functional groups or the like, and a surface treatment apparatus for forming a thin film on the surface of a workpiece by using a sputtering apparatus.

[0003] For example, in the film forming apparatus described in Patent Document 1, a plurality of substrates provided on a carriage are transported into the film forming apparatus to perform required surface treatment. In addition, as an example of surface treatment, plasma treatment described in Patent Document 2 is known.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent Laid-Open No. 4-231464

[0007] Patent Document 2: International Publication No. 2017 / 159838 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] The film forming apparatus of Patent Document 1 has a structure suitable for performing surface treatment of a large number of workpieces. Since the scale of the apparatus is large, it is not suitable for small-scale production to medium-scale production. In addition, when performing surface treatment of a workpiece, it is desired to be able to perform different types of surface treatment such as sputtering and plasma treatment described in Patent Document 2 with one apparatus.

[0010] The present invention has been made in view of the above, and an object thereof is to provide a surface treatment apparatus and a surface treatment method suitable for performing surface treatment of a small to medium amount of materials.

[0011] Means for Solving the Problems

[0012] In order to solve the above problems and achieve the object, the surface treatment apparatus according to the present invention is characterized in that it includes: a housing unit that houses a workpiece; a mounting mechanism that mounts the workpiece; a transfer mechanism that transfers the mounting mechanism in a state where the workpiece is mounted into the housing unit; a surface treatment mechanism that performs at least one type of surface treatment on the workpiece housed in the housing unit; and a rotation mechanism that rotates the workpiece in a predetermined rotation pattern to face the surface treatment mechanism in a state where the mounting mechanism is housed in the housing unit.

[0013] Advantages of the Invention

[0014] The surface treatment apparatus according to the present invention has the effect of being suitable for performing surface treatment on a small to medium amount of workpieces to be processed. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is an external view of the surface treatment apparatus of the embodiment.

[0016] Figure 2 It is an external view of the workpiece placement section.

[0017] Figure 3 It is an external view of the mounting member for mounting the workpiece to be processed.

[0018] Figure 4 It is a diagram for explaining the operation of the workpiece conveying section.

[0019] Figure 5 It is a diagram showing an example of the internal structure of the chamber.

[0020] Figure 6 It is a cross-sectional view showing an example of the structure of the plasma generation device.

[0021] Figure 7 It is a cross-sectional view showing an example of the structure of the sputtering device.

[0022] Figure 8 It is a diagram showing an example of the surface treatment performed on the workpiece by the surface treatment apparatus.

[0023] Figure 9 It is a diagram showing an example of the pressure change in the chamber when the surface treatment apparatus performs surface treatment on the workpiece.

[0024] Figure 10 It is a flowchart showing an example of the process of the treatment performed when the surface treatment apparatus performs surface treatment on the workpiece. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] Hereinafter, embodiments of the surface treatment apparatus according to the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited by these embodiments. In addition, among the components of the following embodiments, there are components that those skilled in the art can replace and components that can be easily conceived or are substantially the same.

[0026] Embodiments of the present disclosure are, for example, examples of the surface treatment apparatus 10. The surface treatment apparatus 10 irradiates plasma onto the surface of a workpiece W (workpiece) formed of a resin material to generate functional groups on the surface of the workpiece W. Then, a thin film is formed by sputtering on the surface of the workpiece W after the adhesion of the film is improved by the generation of the functional groups. In addition, the workpiece W is a component formed of a resin material such as plastic resin.

[0027] [Explanation of the overall structure of the surface treatment apparatus]

[0028] First, use Figure 1 to explain the schematic structure of the surface treatment apparatus 10. Figure 1 is an external view of the surface treatment apparatus of the embodiment.

[0029] As Figure 1 shown, the surface treatment apparatus 10 includes a chamber 20, a workpiece placement unit 30, and a workpiece transfer unit 40. And, an exhaust device 50 is provided inside the chamber 20. Further, the surface treatment apparatus 10 includes Figure 1 the cooling device 51, the control device 52, the power supply device 53, the gas supply device 54, and the operation panel 55 shown in

[0030] The chamber 20 is a sealed reaction vessel for surface-treating the workpiece W accommodated therein. In addition, the chamber 20 is an example of the accommodation unit of the present disclosure.

[0031] The chamber 20 has a rectangular parallelepiped shape, and a part of one of the four standing wall surfaces 20a that stands upright is open. On the other three standing wall surfaces of the chamber 20, that is, the standing wall surface 20b, the standing wall surface 20c, and the standing wall surface 20d, different surface treatment mechanisms are provided. Specifically, a plasma generation device 21 is provided on the standing wall surface 20b. In addition, sputtering devices 22 and 23 are provided on the standing wall surfaces 20c and 20d, respectively. Here, the arrangement conditions of the plasma generation device 21 and the sputtering devices 22 and 23 are not limited. That is, the plasma generation device 21 and the sputtering devices 22 and 23 can be arranged on any of the standing wall surfaces 20b, 20c, and 20d. In addition, the plasma generation device 21 and the sputtering devices 22 and 23 are examples of the surface treatment mechanisms of the present disclosure.

[0032] The sputtering device 22 performs a surface treatment of forming a thin film as a base for plating processing on the workpiece W by sputtering the workpiece W.

[0033] The plasma generation device 21 generates plasma by HCD (Hollow Cathode Discharge) and irradiates the generated plasma onto the workpiece W, for example, on which a thin film has been formed by the sputtering device 22, to perform surface treatment on the workpiece W. More specifically, functional groups are generated on the surface of the workpiece W. Thereby, the adhesion of the thin film when forming a thin film as a base for plating processing on the surface of the workpiece W in subsequent processes is improved.

[0034] The sputtering device 23 performs surface treatment to form a different thin film on the surface after the surface treatment by the plasma generation device 21.

[0035] In addition, in the present embodiment, an example in which different surface treatment mechanisms are provided on the three vertical wall surfaces 20b, 20c, and 20d respectively is described, but the number of the provided surface treatment mechanisms is not limited. That is, only one surface treatment mechanism may be provided. In addition, the type of the surface treatment mechanism is not limited to the above types. That is, a surface treatment mechanism different from the above may be provided.

[0036] The workpiece placement portion 30 is a portion for placing the workpiece W. The detailed structure of the workpiece placement portion 30 will be described later (refer to Figure 2 ).

[0037] The workpiece transfer portion 40 is a transfer mechanism that houses the workpiece placement portion 30 in the chamber 20 with the workpiece W placed thereon. That is, the workpiece transfer portion 40 transfers the workpiece placement portion 30 along the Figure 1 X-axis in. In addition, the workpiece transfer portion 40 is an example of the transfer mechanism of the present disclosure. The detailed structure of the workpiece transfer portion 40 will be described later (refer to Figure 4 ).

[0038] Inside the chamber 20 (on the negative Y-axis side), an exhaust device 50, a cooling device 51, a control device 52, a power supply device 53, and a gas supply device 54 are provided.

[0039] The exhaust device 50 decompresses the inside of the chamber 20 to a vacuum state. The exhaust device 50 is composed of, for example, a rotary pump or a turbo molecular pump.

[0040] The cooling device 51 generates cooling water for cooling the equipment, power supply, etc.

[0041] The control device 52 controls the entire surface treatment device 10.

[0042] The power supply device 53 houses the power supply supplied to each part of the surface treatment device 10.

[0043] The gas supply device 54 supplies the gas for film formation and the gas for reaction to the chamber 20.

[0044] In addition, an operation panel 55 is provided beside the chamber 20. The operation panel 55 receives operation instructions for the surface treatment device 10. In addition, the operation panel 55 has a function of displaying the operation state of the surface treatment device 10.

[0045] [Explanation of the structure of the workpiece placement unit]

[0046] Next, Figure 2 the structure of the workpiece placement unit 30 will be described. Figure 2 It is an external view of the workpiece placement unit.

[0047] The workpiece placement unit 30 includes two worktables 31 and 32 for placing the workpiece W. The worktable 31 is circular and is disposed on the same plane along the XY plane above the table member 35 along the XY plane. And, the worktable 31 rotates around the worktable rotation axis 31b along the Z axis by contacting the outer side surface of a rotation plate 31a rotated by a servo motor (not shown). In addition, the rotation direction of the worktable 31 is not limited. The worktable rotation axis 31b is an example of the rotation mechanism or the first rotation mechanism of the present disclosure. In addition, the worktables 31 and 32 are examples of the placement mechanism of the present disclosure.

[0048] The table member 35 is fixed in a manner orthogonal to the wall member 33 erected along the YZ plane. When the workpiece placement unit 30 is moved to the positive X-axis side and housed in the chamber 20, the wall member 33 seals the vertical wall surface 20a, making the inside of the chamber 20 a closed space.

[0049] Similarly, the worktable 32 is circular and is disposed along the XY plane above the table member 36 along the XY plane. And, the worktable 32 rotates around the worktable rotation axis 32b along the Z axis by contacting the outer side surface of a rotation plate 32a rotated by a servo motor (not shown). In addition, the rotation direction of the worktable 32 is not limited. The worktable rotation axis 32b is an example of the rotation mechanism or the first rotation mechanism of the present disclosure.

[0050] The table member 36 is fixed in a manner orthogonal to the wall member 34 erected along the YZ plane.

[0051] Below the wall members 33 and 34, a workpiece placement unit rotation axis 37 along the Z axis is provided. The workpiece placement unit rotation axis 37 is rotated by a servo motor (not shown), causing the entire workpiece placement unit 30 to rotate around the Z axis. As a result, one of the worktables 31 and 32 is housed in the chamber 20. In addition, the workpiece placement unit rotation axis 37 is an example of the selection mechanism or the third rotation mechanism of the present disclosure.

[0052] In addition, when the worktables 32 are housed in the chamber 20, the vertical wall surface 20a is sealed by the wall member 34, making the interior of the chamber 20 a closed space.

[0053] In addition, on the worktables 31 and 32, mounting member rotating shafts 31c and 32c that are rotationally driven by a servo motor (not shown) are provided. The mounting member rotating shafts 31c and 32c are arranged along the z-axis and are rotated around the Z-axis in a state where a mounting member 38 (refer to Figure 3 ) described later is mounted on the workpiece W. In addition, the rotation directions of the mounting member rotating shafts 31c and 32c are not limited. In addition, the mounting member rotating shafts 31c and 32c are an example of the rotation mechanism or the second rotation mechanism of the present disclosure.

[0054] In Figure 2 example, four mounting member rotating shafts 31c and 32c are provided at approximately 90° intervals respectively centered on the worktable rotating shafts 31b and 32b. In addition, the number of the mounting member rotating shafts 31c and 32c provided is not limited.

[0055] [3. Description of the Structure of the Mounting Member]

[0056] Next, Figure 3 is used to describe the structure for mounting the workpiece W. Figure 3 is an external view of the mounting member 38 for mounting the workpiece.

[0057] The mounting member 38 is placed on the worktables 31 and 32 in a state where the workpiece W is mounted. In Figure 3 example, the mounting member 38 is formed in a regular hexagonal prism shape, and three workpieces W can be mounted on each side surface. That is, 18 workpieces W can be mounted on one mounting member 38.

[0058] The mounting member 38 is arranged on the worktables 31 and 32 such that the central axis 38a of the mounting member 38 coincides with the mounting member rotating shafts 31c and 32c. That is, in Figure 2 structure of the workpiece placing portion 30, a maximum of 72 workpieces W can be mounted on the worktables 31 and 32 respectively. In addition, the shape of the mounting member 38 is not limited to Figure 3 example shown. The surface of the workpiece W mounted in this way is surface-treated by the surface treatment device 10.

[0059] In addition, during the surface treatment, while the mounting member 38 rotates about the central axis 38a (mounting member rotation axis 31c) by itself, the mounting member 38 revolves about the table rotation axis 31b (or table rotation axis 32b) of the table 31 (or table 32). Thus, the surface of the workpiece W faces the plasma generation device 21 or the sputtering devices 22 and 23 at regular intervals (becomes parallel and faces), so the surface is uniformly treated. In addition, the rotation speed, revolution speed, rotation direction, and revolution direction of the mounting member 38 can be arbitrarily set in a specified rotation pattern, so they are appropriately set according to the type of surface treatment to be performed and the type of the workpiece W, etc. For example, the workpiece W can be rotated by itself and revolved at a constant rotational speed. In addition, the workpiece W can be stopped from rotating by itself and revolving during a specified period when the workpiece W faces the surface treatment mechanism. In addition, the workpiece W can be rotated by itself only or revolved only.

[0060] In addition, the form of the mounting member 38 is not limited to Figure 3 the example shown. For example, the mounting member 38 can be made into a plate-like member, and a plurality of workpieces W can be respectively mounted on both surfaces of the plate-like member. The central axis 38a provided on the plate-like member rotates about the mounting member rotation axis 31c (32c) while rotating about the table rotation axis 31b (31c). In addition, the rotation of the mounting member rotation axis 31c (32c) can be stopped, and the mounting member 38 can be rotated only about the table rotation axis 31b (31c). In addition, the workpiece W can be directly provided on the table 31 (32).

[0061] [Explanation of the Structure of the Workpiece Conveying Section]

[0062] Next, Figure 4 the structure of the workpiece conveying section 40 will be described. Figure 4 FIG. is a diagram for explaining the operation of the workpiece conveying section.

[0063] As Figure 4 (a) shows, the workpiece conveying section 40 includes a support table 41 and a groove portion 42. The support table 41 supports the workpiece placing portion 30. The groove portion 42 is a gap through which the workpiece placing portion rotation axis 37 passes when the workpiece placing portion 30 is conveyed along the X axis.

[0064] Figure 4 (b) is a diagram showing a state in which when the workpiece placing portion 30 is in the state of Figure 4 (a), the workpiece conveying section 40 conveys the workpiece placing portion 30 in the positive X-axis direction and houses the table 31 in the chamber 20. At this time, as Figure 4(As shown in (b), the workbench 31, the rotating plate 31a, and the tabletop member 35 are housed in the chamber 20. Also, the vertical wall surface 20a of the chamber 20 is sealed by the wall member 33.)

[0065] Figure 4 ((c) shows a state where when the workpiece placement section 30 is in the state of Figure 4 (a), the rotation axis 37 of the workpiece placement section is rotated 180°, the workpiece transfer section 40 transfers the workpiece placement section 30 in the positive X-axis direction, and the workbench 32 is housed in the chamber 20. At this time, as shown in Figure 4 (c), the workbench 32, the rotating plate 32a, and the tabletop member 36 are housed in the chamber 20. Also, the vertical wall surface 20a of the chamber 20 is sealed by the wall member 34.)

[0066] In addition, when in the state of Figure 4 (b), the surface treatment device 10 performs surface treatment on the workpiece W placed on the workbench 31. At this time, the operator mounts the workpiece W to be surface-treated next onto the mounting member 38, and places the mounting member 38 on which the workpiece W is mounted on the workbench 32.)

[0067] Furthermore, when in the state of Figure 4 (c), the surface treatment device 10 performs surface treatment on the workpiece W placed on the workbench 32. At this time, the operator removes the workpiece W after the surface treatment from the mounting member 38 placed on the workbench 31.)

[0068] [5. Description of the internal structure of the chamber]

[0069] Next, use Figure 5 to describe the internal structure of the chamber 20.) Figure 5 ((It) is a diagram showing the internal structure of the chamber 20.)

[0070] An opener 45 is provided inside the chamber 20. The opener 45 is in a C shape with only one side facing one side of the vertical wall surface of the chamber 20 made into an opening, and is rotationally driven by a servo motor 46 provided on the ceiling surface of the chamber 20. In addition, the opener 45 is arranged so as not to interfere with the rotation of the workbench 31 (32) and the mounting member 38. Thus, the opener 45 shields the electrode surfaces other than the devices in operation among the plasma generation device 21, the sputtering devices 22, 23 for performing the surface treatment of the workpiece W. Furthermore, when the workbench 31 (32) is moved in and out relative to the chamber 20, the opening of the opener 45 faces the direction of the vertical wall surface 20a.)

[0071] When the opening / closing device 45 shields the surfaces of the surface treatment mechanisms other than the one that is performing surface treatment on the workpiece W among the plurality of surface treatment mechanisms. In addition, the opening / closing device 45 is an example of the shielding member of the present disclosure.

[0072] In addition, the structure of the opening / closing device 45 is not limited to Figure 5 the structure. For example, it may be configured as follows: A plurality of elongated plate-like members are provided in a louver shape on the wall surfaces of the vertical wall surfaces 20b, 20c, and 20d, and by pulling up these plate-like members, only the electrode surface for surface treatment is exposed.

[0073] [Explanation of the structure of the plasma generation device]

[0074] Next, use Figure 6 to explain the structure of the plasma generation device 21. Figure 6 is a cross-sectional view showing an example of the structure of the plasma generation device.

[0075] The plasma generation device 21 includes a gas supply pipe 66 that supplies a gas such as argon used in generating plasma, and a pair of plate-like conductor portions 60, 62 that generate plasma from the gas supplied from the gas supply pipe 66 by a high-frequency voltage.

[0076] The gas supply pipe 66 penetrates the support plate 64 in the thickness direction of the support plate 64 and is installed on the support plate 64 by a gas supply pipe mounting member 58. In addition, inside the gas supply pipe 66, a gas flow path 56 is formed along the extending direction of the gas supply pipe 66, and the gas is supplied from the outside of the chamber 20 into the chamber 20 via the gas flow path 56. In addition, at the end of the gas supply pipe 66 on the outside of the support plate 64 (outside the chamber 20), a gas supply portion 78 that supplies gas to the gas supply pipe 66 is connected, and at the other end side (inside the chamber 20) of the gas supply pipe 66, a gas supply hole 57 is formed as a hole for introducing the gas that has flowed through the gas flow path 56 into the chamber 20. For the gas supply portion 78, the gas is supplied via a mass flow controller (MFC) 76 that enables the mass flow meter to have a flow control function.

[0077] Both of the pair of plate-like conductor portions 60, 62 are formed in a flat plate shape and are formed by arranging metal plates such as aluminum or other conductor plates in parallel. The plate-like conductor portions 60, 62 are supported by a support plate 77. The support plate 77 is formed of an insulating material such as glass or ceramic, for example. The support plate 77 is formed in a shape having a convex portion formed over the entire circumference near the outer periphery on one side of the plate. In other words, the support plate 77 is formed in a plate-like shape having a concave portion 67 that is recessed along the outer periphery of the support plate 77 formed on one side.

[0078] The surface of the support plate 77 on the side that does not form the recess 67 faces the support plate 64, and is arranged such that the surface on the side where the recess 67 is formed is on the opposite side of the side where the support plate 64 is located, and is supported by the supported member 59. The supported member 59 has a cylindrical member and mounting members located at both ends of the cylindrical member. The mounting member on one end side is mounted on the support plate 64, and the mounting member on the other end side is mounted on the support plate 77.

[0079] The gas supply pipe 66 passing through the support plate 64 extends through the inside of the cylindrical member of the supported member 59 to the position of the support plate 77 and passes through the support plate 77. Moreover, the gas supply hole 57 formed in the gas supply pipe 66 is arranged at the portion of the support plate 77 where the recess 67 is formed.

[0080] A pair of plate-like conductor parts 60, 62 cover the recess 67 and are arranged on the side of the support plate 77 where the recess 67 is formed. At this time, a gasket 63 is arranged near the outer periphery between the pair of plate-like conductor parts 60, 62, and the pair of plate-like conductor parts 60, 62 are overlapped with the gasket 63 interposed therebetween. In the portions of the pair of plate-like conductor parts 60, 62 other than the gasket 63 where they are overlapped with the gasket 63 interposed therebetween, the plate-like conductor part 60 and the plate-like conductor part 62 are separated from each other to form a gap part 61. The interval of the gap part 61 is preferably appropriately set according to the gas introduced into the plasma generation device 21, the frequency of the supplied power, and the size of the electrodes, etc., and is, for example, about 3 mm to 12 mm.

[0081] In a state where the pair of plate-like conductor parts 60, 62 are overlapped with the gasket 63 interposed therebetween, they are held by a holding member 79, which is a member for holding the plate-like conductor parts 60, 62. That is, the holding member 79 is arranged on the opposite side of the side where the support plate 77 of the plate-like conductor parts 60, 62 is located, and is mounted on the support plate 77 in a state where the plate-like conductor parts 60, 62 are sandwiched between the holding member 79 and the support plate 77.

[0082] The pair of plate-like conductor parts 60, 62 are arranged to cover the recess 67 of the support plate 77, and in a state of being held by the holding member 79, a space is formed between the recess 67 of the support plate 77 and the plate-like conductor parts 60, 62.

[0083] When the plate-like conductor part 62 in the pair of overlapped plate-like conductor parts 60, 62 is arranged on the support plate 77 side and the plate-like conductor part 60 is arranged on the holding member 79 side, this space is partitioned by the recess 67 of the support plate 77 and the plate-like conductor part 62. The space thus formed is formed as a gas introduction part 80 into which the gas supplied by the gas supply pipe 66 is introduced. The gas supply hole 57 of the gas supply pipe 66 is located in the gas introduction part 80 and opens toward the gas introduction part 80. By mounting the support plate 77 in close contact with the plate-like conductor part 62, the gas introduction part 80 is partitioned.

[0084] In addition, a plurality of through-holes 69 and 70 penetrating in the thickness direction are respectively formed in a pair of plate-like conductor portions 60 and 62. That is, in the plate-like conductor portion 62 on the inflow side of the gas supplied by the gas supply pipe 66, a plurality of through-holes 70 are formed at a prescribed interval in a matrix when viewed in the thickness direction of the plate-like conductor portion 62. In the plate-like conductor portion 60 on the outflow side of the gas supplied by the gas supply pipe 66, a plurality of through-holes 69 are formed at a prescribed interval in a matrix when viewed in the thickness direction of the plate-like conductor portion 60.

[0085] The through-hole 69 of the plate-like conductor portion 60 and the through-hole 70 of the plate-like conductor portion 62 are respectively cylindrical holes, and the through-holes 69 and 70 of both are arranged coaxially. That is, the through-hole 69 of the plate-like conductor portion 60 and the through-hole 70 of the plate-like conductor portion 62 are arranged at positions where the centers of the respective through-holes coincide. Among them, the diameter of the through-hole 69 of the plate-like conductor portion 60 is smaller than that of the through-hole 70 of the plate-like conductor portion 62 on the gas inflow side. Thus, a plurality of through-holes 69 and 70 are formed in the pair of plate-like conductor portions 60 and 62 to form a hollow electrode structure, and the generated plasma gas flows at a high density through these plurality of through-holes 69 and 70.

[0086] A gap portion 61 is sandwiched between the parallel plate-like conductor portions 60 and 62, and the gap portion 61 functions as a capacitor having a capacitance. And, on the support plate 77 and the plate-like conductor portions 60 and 62, a conductive portion (not shown) is formed of a conductive member, and the support plate 77 is grounded 75 by this conductive portion, and the plate-like conductor portion 62 is also grounded 75. In addition, one end of the high-frequency power supply (RF) 74 is grounded 75, and the other end of the high-frequency power supply 74 is connected to the plate-like conductor portion 60 through a matching box (MB) 73 for adjusting the capacitance and the like to obtain matching with the plasma. Therefore, when the high-frequency power supply 74 operates, for example, the potential of the plate-like conductor portion 60 vibrates between the positive side and the negative side at a prescribed frequency such as 13.56 MHz.

[0087] And, the surface treatment such as film formation and cleaning of the workpiece W in the chamber 20 is performed by the plasma gas flowing out from the through-hole 70.

[0088] [7. Description of the Structure of the Sputtering Device]

[0089] Next, use Figure 7 to describe the structure of the sputtering device 22. Figure 7 It is a cross-sectional view showing an example of the structure of the sputtering device. In addition, since the sputtering device 23 has the same structure as the sputtering device 22, only the sputtering device 22 will be described here.

[0090] The sputtering device 22 includes: a cooling water pipe 81 through which cooling water flows; a magnet 84 that generates a magnetic field; a target 87 that is inside the magnetic field generated by the magnet 84 and ejects atoms for film formation by ionizing and hitting an inert gas (such as argon) supplied from the gas supply device 54 (refer to Figure 1 ) and flowing in from a gas inlet portion (not shown); a cooling jacket 85 that cools the target 87; and a support plate 83 that supports the magnet 84, the target 87, and the cooling jacket 85. The cooling water pipe 81 penetrates the support plate 83. Further, the target 87 is, for example, a copper plate, and a copper thin film is formed on the surface of the workpiece W by copper atoms ejected from the target 87 being closely attached to the surface of the workpiece W.

[0091] Inside the cooling water pipe 81, a cooling water channel 82 is formed along the extending direction of the cooling water pipe 81. Further, although not shown in Figure 7 , the cooling water channel 82 includes a water channel that supplies cooling water for cooling from the outside of the chamber 20 to the cooling jacket 85, and a water channel that discharges the cooling water used in cooling from the cooling jacket 85 to the outside of the chamber 20. In this way, the cooling water pipe 81 circulates the cooling water between the outside of the chamber 20 and the cooling jacket 85 disposed inside the chamber 20. Further, at the end of the cooling water pipe 81 on the outside of the chamber 20, an inflow path and a discharge path of cooling water (not shown in Figure 7 ) are connected. On the other hand, the end of the other side (inside the chamber 20) of the cooling water pipe 81 is connected to the cooling jacket 85. The cooling jacket 85 has a flow path for cooling water formed inside, and the cooling water flows therein. Thus, the cooling water circulates between the outside of the chamber 20 and the cooling jacket 85. Further, the cooling water is supplied from the above-described cooling device 51 (refer to Figure 1 ).

[0092] The support plate 83 supports the magnet 84, the cooling jacket 85, and the target 87 in an overlapping state. Specifically, the support plate 83, the magnet 84, the cooling jacket 85, and the target 87 are all formed in a plate shape, and the support plate 83 is formed in a shape that is larger in plan view than the magnet 84, the cooling jacket 85, and the target 87. Therefore, by overlapping the magnet 84, the cooling jacket 85, and the target 87 in this order from the side of the support plate 83 and supporting the periphery of the surface of the target 87 opposite to the side of the cooling jacket 85 with the holding member 88, the magnet 84, the cooling jacket 85, and the target 87 are held by the support plate 83 and the holding member 88. In addition, the magnet 84, the cooling jacket 85, and the target 87 held by the holding member 88 are held in a state where the outer peripheral portion is also surrounded by the holding member 88.

[0093] At this time, an insulating member 86 is disposed between the support plate 83 and the magnet 84, and the insulating member 86 is also disposed at the outer peripheral portion of the magnet 84 when viewed from above. That is, the insulating member 86 is disposed between the support plate 83 and the magnet 84 and between the magnet 84 and the holding member 88. Therefore, the magnet 84 is held by the support plate 83 and the holding member 88 via the insulating member 86.

[0094] The sputtering device 22 performs so-called sputtering for forming a thin film on the surface of the workpiece W. When the sputtering device 22 performs sputtering, after the inside of the chamber 20 is decompressed by the exhaust device 50 (refer to Figure 1 ), the gas used for sputtering flows into the inside of the chamber 20 from the gas supply device 54 (refer to Figure 1 ). Then, the gas in the chamber 20 is ionized by the magnetic field generated by the magnet 84 of the sputtering device 22, and the ions are made to collide with the target 87. As a result, atoms of the target 87 are ejected from the surface of the target 87.

[0095] For example, when aluminum is used for the target 87, when ions of the gas ionized near the target 87 collide with the target 87, the target 87 ejects aluminum atoms. The aluminum atoms ejected from the target 87 are directed in the negative X-axis direction. Since the workpiece W is located at a position in the chamber 20 opposite to the surface of the target 87, the aluminum atoms ejected from the target 87 move toward the workpiece W and adhere closely to the workpiece W, accumulating on the surface of the workpiece W. Thus, a thin film corresponding to the material forming the target 87 is formed on the surface of the workpiece W.

[0096] [Explanation of specific surface treatment]

[0097] Next, use Figure 8 , Figure 9 to explain a specific example of the surface treatment performed by the surface treatment device 10 of the present embodiment. Figure 8 is a diagram showing an example of the surface treatment performed by the surface treatment device on the workpiece. Figure 9 is a diagram showing an example of the pressure change in the chamber when the surface treatment device performs surface treatment on the workpiece.

[0098] In the present embodiment, the surface treatment device 10 generates a mirror 90, for example, as an example of an optical component, on one surface of the workpiece W. The mirror 90 has a substantially constant reflectance over the entire visible light region (400 to 800 nm).

[0099] First, the surface treatment device 10 generates an Al layer 90a, which is a thin film of aluminum (Al), on the surface of the workpiece W by operating the sputtering device 22. At this time, when the inside of the chamber 20 is as Figure 9As shown, from the state where the pressure in the chamber 20 is reduced to the pressure P0 (e.g., 10 －2 to 10 －3 Pa) at time t0 and then pressurized to the pressure P1 by introducing gas, sputtering of aluminum is performed. The pressure P1 is, for example, 20 Pa. After the sputtering is completed, the pressure in the chamber 20 is reduced again to the pressure P0 at time t1. At this time, aluminum is used for the target 87. In addition, in Figure 9 , the vertical axis represents the pressure P, and the lower the position, the more reduced the pressure state.

[0100] During the sputtering process, the surface treatment apparatus 10 generates a uniform Al layer 90a on the surface of the workpiece W by rotating the mounting member 38 while revolving it by the worktable 31 (or worktable 32). In addition, the rotation speed, revolution speed, rotation direction, and revolution direction are not limited and are set according to the generation conditions of the Al layer 90a and the like.

[0101] Next, the surface treatment apparatus 10 generates a SiO 2 layer 90b on the surface of the Al layer 90a of the workpiece W by operating the plasma generation device 21. At this time, inside the chamber 20, the SiO 2 layer 90b (laminated film) is generated in the state where the pressure in the chamber 20 is reduced to the pressure P0 at time t1 and then pressurized to the pressure P2 by introducing gas. In addition, the pressure P2 is set to a pressure higher than the pressure P1. The pressure P2 is, for example, 30 Pa. After the generation of the SiO 2 layer 90b, the pressure in the chamber 20 is reduced again to the pressure P0 at time t2.

[0102] During the generation of the SiO 2 layer 90b, the surface treatment apparatus 10 generates a uniform SiO 2 layer 90b on the surface of the workpiece W by rotating the mounting member 38 while revolving it by the worktable 31 (or worktable 32). The rotation speed, revolution speed, rotation direction, and revolution direction of the workpiece W are not limited and are set according to the generation conditions of the SiO 2 layer 90b and the like. In addition, in order to generate the SiO 2 layer 90b, for example, water vapor and silane-based gas are introduced into the chamber 20 as the film-forming gas.

[0103] Next, the surface treatment apparatus 10 generates a thin film of niobium oxide (Nb 2 layer 90b on the surface of the SiO 2 O X ) of the workpiece W by operating the sputtering device 23. 2 O XLayer 90c. At this time, inside the chamber 20, starting from the state where the pressure inside the chamber 20 was reduced to the pressure P0 at time t2 and then pressurized to the pressure P1 by flowing in gas, sputtering of Nb 2 O X is performed. At this time, niobium oxide is used for the target 87. And after the sputtering is completed, the pressure inside the chamber 20 is reduced to the pressure P0 again at time t3.

[0104] During the sputtering, the surface treatment apparatus 10 generates a uniform Nb 2 O X layer 90c on the surface of the workpiece W by rotating the mounting member 38 while revolving the worktable 31 (or the worktable 32). In addition, there are no restrictions on the rotation speed, revolution speed, rotation direction, and revolution direction, which are set according to the generation conditions of the Nb 2 O X layer 90c and so on.

[0105] In addition, before the start and after the completion of the surface treatment of the workpiece W, the chamber 20 is opened, and the pressure inside the chamber 20 becomes equal to the atmospheric pressure.

[0106] In addition, the order of the Al layer 90a, SiO 2 layer 90b, and Nb 2 O X layer 90c generated by the surface treatment apparatus 10 is not limited to the above example. That is, it is also possible to generate a SiO 2 layer 90b on the surface of the workpiece W, then generate an Al layer 90a on the surface of the SiO 2 layer 90b, and generate a Nb 2 O X layer 90c on the surface of the Al layer 90a. In addition, it is also possible to generate a SiO 2 layer 90b and a Nb 2 O X layer 90c on top of the Nb 2 O X layer 90c after generating the Al layer 90a, SiO 2 layer 90b, and Nb 2 O X layer 90c.

[0107] [Explanation of the process of the treatment performed by the surface treatment apparatus]

[0108] Next, Figure 10 the process of the treatment performed by the surface treatment apparatus 10 is described. Figure 10 is a flowchart showing an example of the process of the treatment performed by the surface treatment apparatus when performing surface treatment on the workpiece.

[0109] First, place the mounting member 38 with the workpiece W to be processed thereon on the workbench 31 (step S11).

[0110] The workpiece conveying unit 40 houses the workbench 31 in the chamber 20 (step S12). Additionally, at this time, the opening of the shutter 45 faces the direction of the open vertical wall surface 20a. It is also possible to place the mounting member 38 with the workpiece W to be surface-treated next on the workbench 32 outside the chamber 20 during the surface treatment by the surface treatment apparatus 10 after step S12 is completed.

[0111] Rotate the servo motor 46 according to the instruction of the operation panel 55 to direct the opening of the shutter 45 toward the direction of the vertical wall surface 20c, that is, the direction of the sputtering device 22 (step S13).

[0112] The exhaust device 50 reduces the pressure in the chamber 20 to the pressure P0 (step S14).

[0113] The gas supply device 54 supplies gas into the chamber and pressurizes it to the pressure P1 (step S15).

[0114] Rotate the workbench 31 and the mounting member 38 according to the instruction of the operation panel 55 (step S16).

[0115] The sputtering device 22 forms an Al layer 90a on the surface of the workpiece W (step S17).

[0116] Stop the rotation of the workbench 31 and the mounting member 38 according to the instruction of the operation panel 55 (step S18).

[0117] The exhaust device 50 reduces the pressure in the chamber 20 to the pressure P0 (step S19).

[0118] Rotate the servo motor 46 according to the instruction of the operation panel 55 to direct the opening of the shutter 45 toward the direction of the vertical wall surface 20b, that is, the direction of the plasma generation device 21 (step S20).

[0119] The gas supply device 54 supplies gas into the chamber and pressurizes it to the pressure P2 (step S21).

[0120] Rotate the workbench 31 and the mounting member 38 according to the instruction of the operation panel 55 (step S22).

[0121] The plasma generation device 21 forms a SiO 2 layer 90b on the surface of the Al layer 90a (step S23).

[0122] Stop the rotation of the workbench 31 and the mounting member 38 according to the instruction of the operation panel 55 (step S24).

[0123] The exhaust device 50 decompresses the inside of the chamber 20 to the pressure P0 (step S25).

[0124] By the instruction of the operation panel 55, the servo motor 46 is rotated, and the opening of the switch 45 is directed toward the vertical wall surface 20c, that is, toward the sputtering device 23 (step S26).

[0125] The gas supply device 54 supplies gas into the chamber and pressurizes it to the pressure P1 (step S27).

[0126] By the instruction of the operation panel 55, the table 31 and the mounting member 38 are rotated (step S28).

[0127] The sputtering device 23 generates a Nb 2 layer 90b on the surface of the SiO 2 O X layer 90c (step S29).

[0128] By the instruction of the operation panel 55, the rotation of the table 31 and the mounting member 38 is stopped (step S30).

[0129] The exhaust device 50 decompresses the inside of the chamber 20 to the pressure P0 (step S31).

[0130] By the instruction of the operation panel 55, the exhaust device 50 is stopped, and by opening a pressure adjustment valve (not shown), the air around the chamber 20 is taken into the chamber 20, and the inside of the chamber is opened to the atmosphere (step S32).

[0131] The workpiece transfer unit 40 discharges the table 31 from the chamber 20 (step S33).

[0132] The workpiece W after the surface treatment is taken out from the mounting member 38 (step S34).

[0133] In addition, although not described in the Figure 10 flowchart, the rotation axis 37 of the workpiece placement unit can also be rotated later to direct the table 32 toward the chamber 20, and the above-described various processes can be repeated.

[0134] In addition, the above-described series of processes can also be executed based on the instruction of the operator, or can be automatically executed in the order prepared in advance.

[0135] As described above, in the surface treatment apparatus 10 of the embodiment, the workpiece conveyance unit 40 (distribution mechanism) of the surface treatment apparatus 10 houses the worktables 31 and 32 (mounting mechanisms) on which the workpiece W is placed into the chamber 20 (accommodation unit). Next, the worktable rotation shafts 31b and 32b (rotation mechanisms) and the mounting member rotation shafts 31c and 32c (rotation mechanisms) rotate the workpiece W in a prescribed rotation pattern to face the plasma generation device 21 (surface treatment mechanism) or the sputtering devices 22 and 23 (surface treatment mechanisms) in a state where the workpiece mounting portion 30 is housed in the chamber 20. Accordingly, a surface treatment apparatus suitable for surface-treating a small to medium quantity of workpieces W can be provided.

[0136] In addition, in the surface treatment apparatus 10 of the embodiment, the worktables 31 and 32 (mounting mechanisms) include wall members 33 and 34 that close the chamber 20 when the workpiece mounting portion 30 is housed in the chamber 20. Accordingly, the accommodation of the workpiece W into the interior of the chamber 20 and the sealing operation of the chamber 20 can be continuously performed through a series of operations.

[0137] In addition, in the surface treatment apparatus 10 of the embodiment, the worktable rotation shafts 31b and 32b (first rotation mechanisms) rotate the workpiece mounting portion 30 (mounting mechanism) so that the workpiece W placed on the workpiece mounting portion 30 faces the plasma generation device 21 (surface treatment mechanism) or the sputtering devices 22 and 23 (surface treatment mechanisms). In addition, the mounting member rotation shafts 31c and 32c (second rotation mechanisms) rotate the workpiece W placed on the workpiece mounting portion 30 (mounting mechanism) to face the plasma generation device 21 (surface treatment mechanism) or the sputtering devices 22 and 23 (surface treatment mechanisms). Accordingly, the surface of the workpiece W can be uniformly surface-treated.

[0138] In addition, in the surface treatment apparatus 10 of the embodiment, at least one of the worktable rotation shafts 31b and 32b (first rotation mechanisms) or the mounting member rotation shafts 31c and 32c (second rotation mechanisms) rotates the workpiece W in a prescribed rotation pattern. Accordingly, a rotation pattern corresponding to the type of the workpiece W and the type of the surface treatment can be set.

[0139] In addition, the surface treatment apparatus 10 of the embodiment includes a plurality of worktables 31 and 32 (mounting mechanisms), and the workpiece mounting portion rotation shaft 37 (selection mechanism) selects one of the worktables 31 and 32 to be housed in the chamber 20 (accommodation unit). Accordingly, during the surface treatment of the workpiece W, the workpiece W to be subsequently processed can be mounted on the worktable placed outside the chamber 20. Therefore, time can be efficiently utilized.

[0140] In addition, in the surface treatment apparatus 10 of the embodiment, the workpiece mounting portion rotation shaft 37 (third rotation mechanism) rotates a plurality of worktables 31 and 32 mounted on the same horizontal plane to a position facing the housing opening of the chamber 20 (housing unit). Therefore, replacement of the worktables 31 and 32 can be easily performed.

[0141] In addition, in the surface treatment apparatus 10 of the embodiment, the workpiece W is mounted on a mounting member 38 mounted on the worktables 31 and 32 (mounting mechanism). Therefore, the workpiece W in a desired amount to be processed can be easily set.

[0142] In addition, the surface treatment apparatus 10 of the embodiment includes a plasma generation device 21 (surface treatment mechanism) that performs surface treatment of the workpiece W by irradiating the workpiece W with plasma. Therefore, by generating functional groups on the surface of the workpiece W, the adhesion of the film formed in the subsequent process can be improved.

[0143] In addition, the surface treatment apparatus 10 of the embodiment includes sputtering devices 22 and 23 (surface treatment mechanisms) that perform sputtering on the workpiece W. Therefore, a desired film can be formed on the surface of the workpiece W.

[0144] In addition, the surface treatment apparatus 10 of the embodiment includes an opener / closer 45 (shielding mechanism) that shields surface treatment mechanisms other than the surface treatment mechanism that is performing surface treatment on the workpiece W when one of the plurality of surface treatment mechanisms (plasma generation device 21, sputtering devices 22 and 23) performs surface treatment on the workpiece W. Therefore, the electrode surface of the surface treatment mechanism that does not perform surface treatment on the workpiece W can be protected.

[0145] Reference Signs

[0146] 10…Surface treatment apparatus; 20…Chamber (accommodation unit); 20a, 20b, 20c, 20d…Vertical wall surfaces; 21…Plasma generation device (surface treatment mechanism); 22, 23…Sputtering device (surface treatment mechanism); 30…Workpiece placement part; 31, 32…Worktables (placement mechanisms); 31a, 32a…Rotating plates; 31b, 32b…Worktable rotation shafts (rotation mechanisms, first rotation mechanisms); 31c, 32c…Mounting part rotation shafts (rotation mechanisms, second rotation mechanisms); 33, 34…Wall parts; 35, 36…Tabletop parts; 37…Workpiece placement part rotation shaft (selection mechanism, third rotation mechanism); 38…Mounting part; 40…Workpiece conveying part (conveying mechanism); 41…Supporting table; 42…Groove part; 45…Closer (shielding part); 50…Exhaust device; 51…Cooling device; 52…Control device; 53…Power supply device; 54…Gas supply device; 55…Operation panel; 56…Gas flow path; 57…Gas supply hole; 58…Gas supply pipe mounting part; 59…Supporting part; 60, 62…Plated conductor parts; 61…Gap part; 63…Gasket; 64, 77…Supporting plates; 66…Gas supply pipe; 67…Recess; 69, 70…Through holes; 73…Matching box (MB); 74…High-frequency power supply (RF); 75…Grounding; 76…Mass flow controller (MFC); 78…Gas supply part; 79…Holding part; 80…Gas introduction part; 81…Cooling water pipe; 82…Cooling water path; 83…Supporting plate; 84…Magnet; 85…Cooling sleeve; 86…Insulating part; 87…Target; 88…Holding part; 90…Mirror; 90a…Al layer; 90b…SiO 2 layer; 90c…Nb 2 O X layer; P1, P2…Pressures; W…Workpiece.

Claims

1. A surface treatment device, characterized in that, it comprises: a placement mechanism for placing a plurality of mounting components, which mount the surface of the workpiece to be processed facing outward on the outer peripheral surface of its own upright body; a housing unit for housing the placement mechanism on which the workpiece to be processed is placed; a conveying mechanism for conveying the workpiece to be processed placed on the placement mechanism to a position housed in the housing unit; a surface treatment mechanism erected inside the housing unit for performing at least one surface treatment for modifying the surface state of the workpiece to be processed housed in the housing unit; and a rotation mechanism comprising: a first rotation mechanism for rotating the placement mechanism housed in the housing unit to a facing orientation where the workpiece to be processed faces the surface treatment mechanism in a prescribed rotation pattern; and a second rotation mechanism for rotating the mounting component to a facing orientation where it faces the surface treatment mechanism in a prescribed rotation pattern.

2. The surface treatment device according to claim 1, characterized in that, the placement mechanism comprises a wall component for closing the housing unit when the placement mechanism is housed in the housing unit.

3. The surface treatment device according to claim 1, characterized in that, at least one of the first rotation mechanism and the second rotation mechanism rotates the workpiece to be processed in a prescribed rotation pattern.

4. The surface treatment device according to claim 1, characterized in that, it comprises a plurality of the placement mechanisms, and further comprises a selection mechanism for selecting one of the plurality of placement mechanisms to be housed in the housing unit.

5. The surface treatment device according to claim 4, characterized in that, the selection mechanism comprises a third rotation mechanism for rotating a plurality of the placement mechanisms arranged on the same horizontal plane to positions facing the housing opening of the housing unit.

6. The surface treatment device according to claim 1, characterized in that, the surface treatment mechanism is a plasma generation device for performing surface treatment of the workpiece to be processed by irradiating the workpiece to be processed with plasma.

7. The surface treatment device according to claim 1, characterized in that, the surface treatment mechanism is a sputtering device for performing sputtering on the workpiece to be processed.

8. The surface treatment device according to claim 1, characterized in that, it further comprises a shielding component for shielding surface treatment mechanisms other than the surface treatment mechanism when one of the plurality of surface treatment mechanisms performs surface treatment on the workpiece to be processed.

9. A surface treatment method, characterized in that, A placing mechanism on which a plurality of mounting members for mounting a workpiece to be processed with its surface facing outward on the outer peripheral surface of the upright body itself is housed in a housing unit of a surface treatment mechanism that is provided upright inside the body and performs at least one kind of surface treatment for modifying the surface state of the workpiece housed therein. The workpiece is surface-treated by rotating the placing mechanism by a first rotation mechanism and rotating the mounting members by a second rotation mechanism. The first rotation mechanism rotates the placing mechanism in a specified rotation pattern to a facing orientation where the workpiece faces the surface treatment mechanism, and the second rotation mechanism rotates the mounting members in a specified rotation pattern to a facing orientation where they face the surface treatment mechanism.

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