Electrostatic chuck system and semiconductor processing apparatus
By setting up an RF blocking section in the electrostatic chuck system to limit RF current coupling and leakage, the problem of RF current crosstalk under variable electrode spacing is solved, achieving stable DC current input and RF filtering during movement, and improving etching uniformity and safety.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ADVANCED MICRO FAB EQUIP INC CHINA
- Filing Date
- 2021-12-24
- Publication Date
- 2026-05-12
AI Technical Summary
In a capacitively coupled plasma etching reaction chamber with variable electrode spacing, the relative displacement between the electrostatic chuck and the thin-film resistors, coaxial cables, and high-voltage modules associated with the DC circuit causes radio frequency current crosstalk, affecting etching uniformity and safety.
The first and second radio frequency blocking sections are located on the DC path of the electrostatic chuck and the bottom wall of the reaction chamber, respectively, to limit the coupling of radio frequency current to the DC path and prevent radio frequency leakage. Radio frequency filtering is achieved through components such as non-inductive resistors and magnetic ring inductors.
Stable DC current input is achieved during the movement of the electrostatic chuck, preventing radio frequency loss and leakage, improving etching uniformity, and reducing safety risks.
Smart Images
Figure CN116344307B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor processing technology, and in particular to an electrostatic chuck system and semiconductor processing equipment. Background Technology
[0002] Currently, the lower electrode structure of semiconductor process equipment generally includes an electrostatic chuck, an RF system, and a DC power supply system. An electrostatic chuck (ESC) consists of a ceramic layer, a heating layer, and a base arranged sequentially from top to bottom. The ceramic layer contains adsorption electrodes for adsorbing the workpiece, and the heating layer contains heating wires for heating the workpiece.
[0003] When the semiconductor process equipment is a plasma etching device, the electrostatic chuck has both radio frequency (RF) current conduction and electrostatic adsorption functions. During etching, the RF current is conducted along the metal surface of the electrostatic chuck, while the DC current is introduced into the DC electrode inside the ceramic layer of the electrostatic chuck. During this process, the RF current near the DC electrode will crosstalk into the DC circuit in the form of capacitive coupling and conduct downwards along the DC input path, causing adverse effects: 1) Localized loss of RF energy will affect the etching uniformity of the wafer surface; 2) The lack of filtering in the DC circuit will lead the RF current out of the cavity, causing RF leakage, which may damage the DC power supply and pose a safety hazard to operators. Therefore, in existing implementations, a high-resistance thin-film resistor is typically connected near the DC electrode, and then the thin-film resistor is connected to the high-voltage module via a coaxial cable to achieve DC current input and RF current filtering.
[0004] However, for capacitively coupled plasma etching reaction chambers with variable electrode spacing, the movable design of the electrostatic chuck inevitably leads to relative displacement between the electrostatic chuck and the thin-film resistors, coaxial cables, and high-voltage modules associated with the DC circuit, rendering the original fixed design no longer applicable. Summary of the Invention
[0005] The purpose of this invention is to provide an electrostatic chuck system and semiconductor processing equipment, which can stably complete the input of DC current and the filtering of radio frequency current during movement.
[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:
[0007] An electrostatic chuck system, disposed within the reaction chamber of a plasma processing apparatus, includes: an electrostatic chuck capable of vertical movement relative to the bottom wall of the reaction chamber; and a radio frequency (RF) power source and a DC power source respectively connected to the electrostatic chuck, with an RF path and a DC path formed between the electrostatic chuck and the RF power source and DC power source, respectively. It further includes: a first RF blocking portion and a second RF blocking portion interconnected. The first RF blocking portion is located on the DC path and disposed on the electrostatic chuck, and moves vertically with the electrostatic chuck relative to the bottom wall of the reaction chamber; the first RF blocking portion is used to limit the coupling of RF current in the RF path to the DC path. The second RF blocking portion is disposed at an opening on the bottom wall of the reaction chamber, the opening for connecting the DC path to the DC power source; the second RF blocking portion is used to prevent the RF current from leaking from the opening to the outside of the reaction chamber.
[0008] Optionally, it further includes: a DC electrode disposed within the electrostatic chuck; a DC pin, the first end of which passes through the electrostatic chuck and is connected to the DC electrode; and a first radio frequency blocking portion disposed on the electrostatic chuck and connected to the second end of the DC pin.
[0009] Optionally, it further includes: a coaxial cable located on the DC path, a first radio frequency blocking part located at the bottom of the electrostatic chuck, and both ends of the coaxial cable being electrically connected to the first radio frequency blocking part and the DC power supply, respectively.
[0010] Optionally, isolation pads are provided at both ends of the first radio frequency blocking part, the second end of the DC pin passes through the isolation pad located at the first end of the first radio frequency blocking part, and the coaxial cable passes through the isolation pad located at the second end of the first radio frequency blocking part.
[0011] Optionally, the second radio frequency blocking part is located on the DC path, the coaxial cable is electrically connected to the DC power supply through the second radio frequency blocking part, and the second radio frequency blocking part is fixed at the opening on the bottom wall of the reaction chamber.
[0012] Optionally, the first radio frequency blocking portion and the second radio frequency blocking portion include at least one of a resistor, a hollow inductor, or a magnetic ring inductor.
[0013] Optionally, the second radio frequency blocking part is provided with isolation pads at both ends, the coaxial cable passes through the isolation pad located at the first end of the second radio frequency blocking part, and the isolation pad located at the second end of the second radio frequency blocking part is fixed to the bottom wall of the reaction chamber.
[0014] Optionally, the second radio frequency blocking part includes a shielding layer and a DC input line wrapped inside the shielding layer; one end of the outer shielding layer is connected to the first radio frequency blocking part, and the other end is connected to the bottom interior of the reaction chamber, and the bottom wall of the reaction chamber is grounded; one end of the DC input line is electrically connected to the first radio frequency blocking part, and the other end is electrically connected to the DC power supply.
[0015] Optionally, when the RF power source outputs a low-frequency RF signal, the magnetic ring inductor is a low-frequency magnetic ring inductor.
[0016] Optionally, when the RF power source outputs a high-frequency RF signal, the magnetic ring inductor is a high-frequency magnetic ring inductor.
[0017] Optionally, it further includes a support shaft connected to the bottom of the electrostatic chuck and driving the electrostatic chuck to reciprocate vertically. The radio frequency power source is coupled to the electrostatic chuck through the support shaft, and the radio frequency current provided by the radio frequency power source is conducted along the surfaces of the support shaft and the electrostatic chuck.
[0018] Optionally, the electrostatic chuck includes: a chuck body and an insulating plate disposed on the chuck body; the DC electrode is embedded in the insulating plate.
[0019] Optionally, the disk body includes: a functional substrate and an aluminum substrate arranged sequentially from bottom to top; the support shaft is connected to the functional substrate.
[0020] Optionally, the support shaft includes an RF guide rod and an RF bellows sleeved outside the RF guide rod; one end of the RF guide rod is connected to the bottom wall of the functional substrate; the other end of the RF guide rod passes through the bottom of the reaction chamber and is connected to the external RF power source.
[0021] Optionally, the radio frequency path is composed of the outer surface of the radio frequency guide rod, the outer surface of the radio frequency bellows, the bottom wall and side surface of the functional substrate, and the side surface and top surface of the aluminum substrate.
[0022] Optionally, the insulating plate is made of ceramic material.
[0023] Optionally, the insulating plate is used to place the substrate to be processed; the DC power supply is controlled to input DC current to the DC electrode to adsorb the substrate to be processed onto the insulating plate. The radio frequency power source is controlled to feed radio frequency current into the disk to excite the reaction gas input into the reaction chamber to process the substrate to be processed.
[0024] On the other hand, the present invention also provides a semiconductor processing apparatus, comprising: a reaction chamber, and an electrostatic chuck system as described above located inside the reaction chamber.
[0025] The present invention has at least the following advantages:
[0026] This invention utilizes a first radio frequency (RF) blocking part and a second RF blocking part. The first RF blocking part can move up and down with the electrostatic chuck to limit RF coupling to the DC path. Specifically, it prevents unwanted RF losses and prevents RF coupling to the DC path from damaging the DC power supply. The second RF blocking part is fixed to the DC path opening on the bottom wall of the chamber to prevent RF leakage from this opening and causing danger. This invention achieves the goal of movability of the DC input line and solves the problems of RF leakage and adverse effects on etching uniformity. Attached Figure Description
[0027] Figure 1 This is a schematic diagram of the main structure of the electrostatic chuck system provided in Embodiment 1 of the present invention;
[0028] Figure 2 This is a schematic diagram of the main structure of the electrostatic chuck system provided in Embodiment 2 of the present invention;
[0029] Figure 3 This is a schematic diagram of the main structure of the electrostatic chuck system provided in Embodiment 3 of the present invention;
[0030] Figure 4 This is a schematic diagram of the main structure of the electrostatic chuck system provided in Embodiment 4 of the present invention. Detailed Implementation
[0031] The following detailed description, in conjunction with specific embodiments, provides a further detailed explanation of the electrostatic chuck system and semiconductor processing equipment proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of this invention. Please refer to the accompanying drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.
[0032] Example 1
[0033] like Figure 1As shown, this embodiment provides an electrostatic chuck system disposed within the reaction chamber of a plasma processing device. It includes: an electrostatic chuck capable of vertical movement relative to the bottom wall 100 of the reaction chamber; and a radio frequency (RF) power source and a DC power supply 250 respectively connected to the electrostatic chuck. An RF path and a DC path are formed between the electrostatic chuck and the RF power source and DC power supply 250, respectively. It also includes: a first RF blocking part and a second RF blocking part connected to each other. The first RF blocking part is located on the DC path and disposed on the electrostatic chuck, and moves vertically with the electrostatic chuck relative to the bottom wall 100 of the reaction chamber. The high-voltage current of the DC power supply is input into the electrostatic chuck through the first RF blocking part, which limits the coupling of the RF current in the RF path to the DC path. The second RF blocking part is disposed at an opening on the bottom wall of the reaction chamber, which connects the DC path to the DC power supply 250; the second RF blocking part prevents the RF current from leaking from the opening to the outside of the reaction chamber. Therefore, this embodiment can solve the problem of high-voltage DC input for a movable electrostatic chuck. Specifically, this embodiment includes a first radio frequency blocking part and a second radio frequency blocking part. The first radio frequency blocking part can move up and down with the electrostatic chuck. When the radio frequency moves along the surface of the electrostatic chuck, it is blocked by the first radio frequency blocking part at the input of the DC circuit and the electrostatic chuck, which can limit the radio frequency from coupling to the DC path. Specifically, it is used to prevent unwanted radio frequency loss on the one hand, and to prevent the radio frequency coupled to the DC path from damaging the DC power supply 250 on the other hand. The second radio frequency blocking part is fixed to the DC path opening on the bottom wall of the chamber to prevent the radio frequency from leaking out of the chamber from the opening and causing danger.
[0034] Please continue to refer to this. Figure 1 As shown, this embodiment also includes: a DC electrode 200 disposed inside the electrostatic chuck; a DC pin 201, the first end of which passes through the electrostatic chuck and is connected to the DC electrode 200; and a first radio frequency blocking portion disposed on the electrostatic chuck and connected to the second end of the DC pin 201.
[0035] This embodiment also includes: a first coaxial cable 220 located on the DC path, a first radio frequency blocking part located at the bottom of the electrostatic chuck, and the two ends of the first coaxial cable 220 being electrically connected to the first radio frequency blocking part and the DC power supply 250, respectively.
[0036] In this embodiment, the first radio frequency blocking part includes: a first non-inductive resistor 210, and isolation pads 240 respectively disposed at both ends of the first non-inductive resistor 210; the second radio frequency blocking part includes: a second non-inductive resistor 211, and isolation pads 240 respectively disposed at both ends of the second non-inductive resistor 211; the second end of the DC pin 201 passes through the corresponding isolation pad 240 and is connected to the first end of the first non-inductive resistor 210; both ends of the coaxial cable 220 pass through the corresponding isolation pads 240 and are connected to the second end of the first non-inductive resistor 210 and the first end of the second non-inductive resistor 211, respectively. Specifically, a coaxial cable shielding interface 230 is provided on the isolation pad 240 at the second end of the first non-inductive resistor 210, and a coaxial cable shielding interface 230 is provided on the isolation pad 240 at the first end of the second non-inductive resistor 211. The coaxial cable shielding interface 230 is provided to connect with the shielding layer of the coaxial cable 220 to prevent DC from being exposed inside the reaction chamber. In other embodiments, the first non-inductive resistor 210 and the second non-inductive resistor 211 can also be other resistor types, as long as they can block radio frequency transmission.
[0037] The DC lead of the DC power supply 250 passes through the isolation pad 240 connected to the bottom wall 100 of the reaction chamber and is connected to the second end of the second non-inductive resistor 211; the first non-inductive resistor 210 is used to filter the radio frequency current following the input direction of the DC current in the DC path, so as to prevent the radio frequency current from entering the DC electrode 200 upward through the DC pin 201; the second non-inductive resistor 211 is used to filter the radio frequency current from flowing to the DC power supply after being capacitively coupled to the coaxial cable and then flowing back to the DC power supply along the return direction of the DC current, so as to prevent the radio frequency current from being led out of the reaction chamber through the DC lead.
[0038] Please continue to refer to this. Figure 1 As shown, the electrostatic chuck includes: a chuck body and an insulating plate 101 disposed on the chuck body; the insulating plate 101 houses the DC electrode 200. The insulating plate 101 is made of ceramic material, but the present invention is not limited thereto.
[0039] In this embodiment, the disk body includes a functional substrate 103 and an aluminum substrate 102 arranged sequentially from bottom to top.
[0040] A support shaft is connected to the bottom of the electrostatic chuck, that is, the support shaft is connected to the functional substrate 103 and drives the electrostatic chuck to reciprocate in the vertical direction; the radio frequency power source is coupled to the electrostatic chuck through the support shaft, and the radio frequency current 301 provided by the radio frequency power source is conducted along the surface of the support shaft and the electrostatic chuck.
[0041] In this embodiment, the support shaft includes an RF guide rod 302 and an RF bellows 303 sleeved outside the RF guide rod 302; one end of the RF guide rod 302 is connected to the bottom wall of the functional substrate 103; the other end of the RF guide rod 302 passes through the bottom wall 100 of the reaction chamber and is connected to the external RF power source.
[0042] In this embodiment, the radio frequency path is composed of the outer surface of the radio frequency guide rod 302, the outer surface of the radio frequency bellows 303, the bottom and side surfaces of the functional substrate 103, and the side and top surfaces of the aluminum substrate 102.
[0043] In this embodiment, the insulating plate 101 is used to place the substrate to be processed; the DC power supply 250 is controlled to input DC current to the DC electrode 200 to adsorb the substrate to be processed onto the insulating plate 101. The radio frequency power source is controlled to feed radio frequency current into the disk to excite the reaction gas input into the reaction chamber to process the substrate to be processed.
[0044] Therefore, in this embodiment, the first non-inductive resistor 210 and the second non-inductive resistor 211 are isolated by corresponding insulating pads and fixed to the bottom surface of the functional substrate 103 and the inner surface of the bottom wall 100 of the reaction chamber, respectively. The first non-inductive resistor 210 is located within the strong radio frequency field and moves with the functional substrate 103 to prevent radio frequency current from entering the DC electrode 200 through the DC pin 201. The second non-inductive resistor 211 (referred to as the grounding resistor) is located within the grounding area and is fixed to the surface inside the chamber to prevent radio frequency current from being led downwards out of the chamber through the DC input path. The two non-inductive resistors are connected by a coaxial cable to achieve relative movement. During the movement, the coaxial cable will inevitably be affected by radio frequency coupling. However, due to the presence of the non-inductive resistors at both ends, this effect will be greatly weakened and can be ignored. Thus, this embodiment can achieve the purpose of stably completing the input of DC current and filtering of radio frequency current during the movement of the electrostatic chuck.
[0045] Example 2
[0046] like Figure 2As shown, the difference between Embodiment 2 and Embodiment 1 is that the first RF blocking part includes: a third non-inductive resistor 212, and isolation pads 240 respectively disposed at both ends of the third non-inductive resistor 212. The second RF blocking part includes a shielding layer and a DC input line 221 wrapped inside the shielding layer. The shielding layer is made of a flexible material. The second end of the DC pin 201 passes through the corresponding isolation pad 240 and is connected to the first end of the third non-inductive resistor 212. The first end of the shielding layer is connected to the corresponding isolation pad 240. The first end of the DC input line 221 passes through the corresponding isolation pad 240 and is connected to the second end of the third non-inductive resistor 212.
[0047] The second end of the shielding layer is connected to the inner surface of the bottom wall 100 of the reaction chamber, and the bottom wall 100 of the reaction chamber is grounded.
[0048] The second end of the DC input line 221 is connected to the DC power supply 250 outside the reaction chamber.
[0049] The third non-inductive resistor 212 is used to filter the radio frequency current following the input direction of the DC current in the DC path, so as to prevent the radio frequency current from entering the DC electrode 200 upward through the DC pin 201. The shielding layer is used to conduct the radio frequency current, which is conducted along the DC current loop in the direction of the DC power supply, to ground through the bottom wall 100 of the reaction chamber.
[0050] In other embodiments, the third non-inductive resistor 212 can also be selected from other resistor types, as long as it can block radio frequency transmission.
[0051] In this embodiment, the second radio frequency blocking part can be a coaxial cable. The coaxial cable itself includes a shielding layer (e.g., a metal shielding layer, which blocks the radio frequency current from affecting the DC transmission inside the shielding layer) and wires wrapped inside the shielding layer. Thus, the coaxial cable can be used to conduct DC current and conduct the radio frequency current, which is conducted along the return direction of the DC current, to ground through the bottom wall 100 of the reaction chamber. Therefore, this embodiment can stably complete the input of DC current and the filtering of radio frequency current during the movement of the electrostatic chuck.
[0052] Example 3
[0053] like Figure 3 As shown, the difference between this embodiment and Embodiment 1 is that the first radio frequency blocking part includes: a hollow inductor 260 and isolation pads 240 respectively disposed at both ends of the hollow inductor 260.
[0054] The second radio frequency blocking part includes: a fourth non-inductive resistor 213, and isolation pads 240 respectively disposed at both ends of the fourth non-inductive resistor 213. The second end of the DC pin 201 passes through the corresponding isolation pad 240 and is connected to the first end of the hollow inductor 260. Both ends of the coaxial cable 220 pass through the corresponding isolation pads 240 and are connected to the second end of the hollow inductor 260 and the first end of the fourth non-inductive resistor 213, respectively. The DC lead of the DC power supply 250 passes through the isolation pad 240 connected to the bottom wall 100 of the reaction chamber and is connected to the second end of the fourth non-inductive resistor 213.
[0055] In other embodiments, the fourth non-inductive resistor 213 can also be selected from other resistor types, as long as it can block radio frequency (RF) transmission. The hollow inductor 260 is used to filter the RF current following the input direction of the DC current in the DC path, so as to prevent the RF current from entering the DC electrode 200 upward through the DC pin 201. The fourth non-inductive resistor 213 is used to filter the RF current in the return direction of the DC current, so as to prevent the RF current from being led out of the reaction chamber through the DC lead.
[0056] Therefore, this embodiment utilizes the characteristics of the hollow inductor 260 to pass DC or low frequency and block high frequency for radio frequency filtering, thereby achieving the purpose of filtering the radio frequency current that follows the input direction of the DC current in the DC path, that is, achieving the purpose of stably completing the input of DC current and filtering the radio frequency current during the movement of the electrostatic chuck.
[0057] Example 4
[0058] like Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the first radio frequency blocking part includes: a magnetic ring inductor 270 and isolation pads 240 respectively disposed at both ends of the magnetic ring inductor 270.
[0059] The second radio frequency blocking part includes: a fifth non-inductive resistor 214, and isolation pads 240 respectively disposed at both ends of the fifth non-inductive resistor 214.
[0060] The second end of the DC pin 201 passes through the corresponding isolation pad 240 and is connected to the first end of the magnetic ring inductor 270.
[0061] The two ends of the coaxial cable 220 pass through the corresponding isolation pads 240 and are connected to the second end of the magnetic ring inductor 270 and the first end of the fifth non-inductive resistor 214, respectively.
[0062] The DC lead of the DC power supply 250 passes through the isolation pad 240, which is connected to the bottom wall 100 of the reaction chamber, and is connected to the second end of the fifth non-inductive resistor 214.
[0063] The magnetic ring inductor 270 is used to filter the radio frequency current following the input direction of the DC current in the DC path, so as to prevent the radio frequency current from entering the DC electrode 200 upward through the DC pin 201; the fifth non-inductive resistor 214 is used to filter the radio frequency current in the return direction of the DC current, so as to prevent the radio frequency current from being led out of the reaction chamber through the DC lead.
[0064] In other embodiments, the fifth non-inductive resistor 214 can also be selected from other resistor types, as long as it can block radio frequency (RF) signals. Thus, this embodiment utilizes the characteristic of the magnetic ring inductor 270 to pass DC or low frequencies while blocking high frequencies for RF filtering. This achieves the filtering of RF current that follows the input direction of the DC current in the DC path, thereby achieving the purpose of stably completing the input of DC current and filtering the RF current during the movement of the electrostatic chuck.
[0065] In this embodiment, when the RF power source outputs a low-frequency RF signal, the magnetic ring inductor 270 is a low-frequency magnetic ring inductor. When the RF power source outputs a high-frequency RF signal, the magnetic ring inductor 270 is a high-frequency magnetic ring inductor.
[0066] This embodiment also provides a semiconductor processing apparatus, including: a reaction chamber, and an electrostatic chuck system as described in any one of embodiments one to four, located inside the reaction chamber. When etching a substrate using the semiconductor processing apparatus, embodiments one to four achieve stable DC current input and RF current filtering during the movement of the electrostatic chuck, reducing the influence of the DC path on the RF path and further improving the substrate etching uniformity.
[0067] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0068] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.
[0069] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0070] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0071] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.
Claims
1. An electrostatic chuck system, disposed within the reaction chamber of a plasma processing device, comprising: An electrostatic chuck capable of moving up and down relative to the bottom wall of the reaction chamber, and a radio frequency power source and a DC power source respectively connected to the electrostatic chuck, wherein a radio frequency path and a DC path are respectively formed between the electrostatic chuck and the radio frequency power source and the DC power source; characterized in that it further includes: a first radio frequency blocking part and a second radio frequency blocking part connected to each other; The first radio frequency blocking part is located on the DC path and disposed on the electrostatic chuck, and moves up and down with the electrostatic chuck relative to the bottom wall of the reaction chamber. The first radio frequency blocking part is used to limit the radio frequency current in the radio frequency path from coupling to the DC path. The second radio frequency blocking part is disposed at the opening on the bottom wall of the reaction chamber, the opening being used to connect the DC path to the DC power supply; the second radio frequency blocking part is used to prevent the radio frequency current from leaking from the opening to the outside of the reaction chamber.
2. The electrostatic chuck system as described in claim 1, characterized in that, It also includes: a DC electrode, which is disposed within the electrostatic chuck; A DC pin, the first end of which passes through the electrostatic chuck and is connected to the DC electrode; The first radio frequency blocking part is disposed on the electrostatic chuck and connected to the second end of the DC pin.
3. The electrostatic chuck system as described in claim 2, characterized in that, Also includes: The coaxial cable located on the DC path has a first radio frequency blocking part located at the bottom of the electrostatic chuck, and both ends of the coaxial cable are electrically connected to the first radio frequency blocking part and the DC power supply, respectively.
4. The electrostatic chuck system as described in claim 3, characterized in that, An isolation pad is provided at each end of the first radio frequency blocking part. The second end of the DC pin passes through the isolation pad located at the first end of the first radio frequency blocking part, and the coaxial cable passes through the isolation pad located at the second end of the first radio frequency blocking part.
5. The electrostatic chuck system as described in claim 3, characterized in that, The second radio frequency blocking part is located on the DC path, and the coaxial cable is electrically connected to the DC power supply through the second radio frequency blocking part. The second radio frequency blocking part is fixed at the opening on the bottom wall of the reaction chamber.
6. The electrostatic chuck system as described in claim 5, characterized in that, The first radio frequency blocking portion and the second radio frequency blocking portion include at least one of a resistor, a hollow inductor, or a magnetic ring inductor.
7. The electrostatic chuck system as described in claim 5, characterized in that, The second radio frequency blocking part is provided with isolation pads at both ends. The coaxial cable passes through the isolation pad located at the first end of the second radio frequency blocking part, and the isolation pad located at the second end of the second radio frequency blocking part is fixed to the bottom wall of the reaction chamber.
8. The electrostatic chuck system as described in claim 3, characterized in that, The second radio frequency blocking part includes a shielding layer and a DC input line wrapped inside the shielding layer; One end of the shielding layer is connected to the first radio frequency blocking part, and the other end is connected to the bottom interior of the reaction cavity, and the bottom wall of the reaction cavity is grounded; One end of the DC input line is electrically connected to the first radio frequency blocking part, and the other end is electrically connected to the DC power supply.
9. The electrostatic chuck system as described in claim 6, characterized in that, When the RF power source outputs a low-frequency RF signal, the magnetic ring inductor is a low-frequency magnetic ring inductor.
10. The electrostatic chuck system as described in claim 6, characterized in that, When the radio frequency power source outputs a high-frequency radio frequency signal, the magnetic ring inductor is a high-frequency magnetic ring inductor.
11. The electrostatic chuck system according to any one of claims 1 to 8, characterized in that, Also includes: A support shaft is connected to the bottom of the electrostatic chuck and drives the electrostatic chuck to reciprocate in the vertical direction; The radio frequency power source is coupled to the electrostatic chuck via the support shaft, and the radio frequency current provided by the radio frequency power source is conducted along the surface of the support shaft and the electrostatic chuck.
12. The electrostatic chuck system as described in claim 11, characterized in that, The electrostatic chuck includes: a chuck body and an insulating plate disposed on the chuck body; the DC electrode is embedded in the insulating plate.
13. The electrostatic chuck system as described in claim 12, characterized in that, The disk body includes: a functional substrate and an aluminum substrate arranged sequentially from bottom to top; the support shaft is connected to the functional substrate.
14. The electrostatic chuck system as described in claim 13, characterized in that, The support shaft includes an RF guide rod and an RF bellows sleeved outside the RF guide rod; one end of the RF guide rod is connected to the bottom wall of the functional substrate. The other end of the radio frequency guide rod passes through the bottom of the reaction chamber and is connected to the external radio frequency power source.
15. The electrostatic chuck system as described in claim 14, characterized in that, The radio frequency path is composed of the outer surface of the radio frequency guide rod, the outer surface of the radio frequency bellows, the bottom wall and side surface of the functional substrate, and the side surface and top surface of the aluminum substrate.
16. The electrostatic chuck system as described in claim 15, characterized in that, The insulating board is made of ceramic material.
17. The electrostatic chuck system as described in claim 16, characterized in that, The insulating plate is used to place the substrate to be processed; The DC power supply is controlled to input DC current to the DC electrode to adsorb the substrate to be processed onto the insulating plate; The radio frequency power source is controlled to feed radio frequency current into the disk to excite the reaction gas input into the reaction chamber, thereby processing the substrate to be processed.
18. A semiconductor processing apparatus, characterized in that, include: A reaction chamber, and an electrostatic chuck system as described in any one of claims 1 to 17 located inside the reaction chamber.