Substrate processing apparatus, substrate processing method, semiconductor manufacturing method, and recording medium

Abstract

The present application provides a substrate processing apparatus, a substrate processing method, a semiconductor manufacturing method, and a recording medium. A technology capable of suppressing misalignment of a substrate with respect to a placement table in a case where the substrate is carried by an arm rotating and the carried substrate is placed on the placement table is obtained. The technology of the present disclosure includes: a carrying apparatus having a shaft rotating with an axial direction being a vertical direction, and an arm extending in a horizontal direction from the shaft and supporting a substrate, the carrying apparatus carrying the substrate above a placement table by rotating the arm supporting the substrate; a detection section detecting the substrate supported by the arm and carried; a carrying control section configured to be able to detect a carrying offset of the substrate with respect to the arm based on a detection result of the detection section, and control the carrying apparatus in a manner to correct misalignment of the substrate with respect to the placement table; and a processing section processing the substrate placed on the placement table.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a semiconductor manufacturing method, and a recording medium. BACKGROUND

[0002] The substrate processing apparatus described in Patent Document 1 has a conveyance unit that conveys a substrate into a processing chamber, and a first control unit that controls the conveyance unit in accordance with an automatic conveyance process including a substrate conveyance sequence composed of a plurality of sequences. Further, a sequence has at least one or more conveyance actions performed while conveying, and a determination process in which a sensor checks each conveyance action.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENT

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-206222

[0006] In the conventional substrate processing apparatus, sometimes the conveyance action of a substrate conveyed from a vacuum device to a process chamber is checked. In other words, sometimes the conveyance action of a substrate conveyed from one unit to another unit is checked. However, in such a configuration, the action of a substrate conveyed inside the unit cannot be checked.

[0007] For example, there is a configuration in which, inside the unit, a substrate is supported to an arm, the substrate is conveyed by rotating the arm, and the conveyed substrate is placed on a placement table. In such a configuration, since the arm is rotated, the substrate supported to the arm sometimes shifts with respect to the arm. In this case, if the substrate conveyed by the arm is placed on the placement table, misalignment (positional shift) occurs in the substrate placed on the placement table. SUMMARY

[0008] The present disclosure aims to suppress misalignment of a substrate with respect to a placement table in a technology in which a substrate is conveyed by an arm that rotates and the conveyed substrate is placed on a placement table.

[0009] According to one aspect of the present disclosure, there is provided a technology in which:

[0010] a conveyance device that has an axis that rotates so that the axis direction is a vertical direction, and an arm that extends in a horizontal direction from the axis and supports a substrate, the conveyance device conveying the substrate above a placement table by rotating the arm that supports the substrate;

[0011] a detection unit that detects the substrate supported to the arm and conveyed;

[0012] a conveyance control section configured to detect a conveyance deviation of the substrate with respect to the arm based on a detection result of the detection section, and control the conveyance device in a manner to correct a misalignment of the substrate with respect to the stage.

[0013] a processing section that processes the substrate placed on the stage.

[0014] Effects of Invention

[0015] According to the present disclosure, it is possible to suppress misalignment of a substrate with respect to a stage in a technique of conveying a substrate with an arm that rotates and placing the conveyed substrate on the stage. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic configuration view that shows the overall configuration of a substrate processing apparatus according to an embodiment of the present disclosure.

[0017] Figure 2 is a cross-sectional view that shows a processing furnace and the like provided in a substrate processing apparatus according to an embodiment of the present disclosure.

[0018] Figure 3 is a block diagram that shows a process controller and the like provided in a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 4 is a flowchart that shows each process of a film formation process performed by a process controller of a substrate processing apparatus according to an embodiment of the present disclosure.

[0020] Figure 5 is a block diagram that shows a conveyance control section and the like provided in a substrate processing apparatus according to an embodiment of the present disclosure.

[0021] Figure 6 is a plan view that shows a susceptor and the like provided in a processing module of a substrate processing apparatus according to an embodiment of the present disclosure.

[0022] Figure 7A is a process diagram that shows a process performed by a conveyance control section of a substrate processing apparatus according to an embodiment of the present disclosure, and shows a structure in which a wafer is arranged on a susceptor on a near side.

[0023] Figure 7B is a process diagram that shows a process performed by a conveyance control section of a substrate processing apparatus according to an embodiment of the present disclosure, and shows a structure in which an arm is made to enter between a susceptor and a wafer.

[0024] Figure 7C is a process diagram that shows a process performed by a conveyance control section of a substrate processing apparatus according to an embodiment of the present disclosure, and shows a structure in which a wafer is supported by an arm.

[0025] Figure 7Dis a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0026] Figure 7E is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0027] Figure 7F is a process chart showing a structure in which an arm is rotated by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0028] Figure 7G is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0029] Figure 7H is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0030] Figure 7I is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0031] Figure 7J is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0032] Figure 7K is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0033] Figure 8A is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0034] Figure 8B is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0035] Figure 8C is a process chart showing a structure in which a wafer is carried by a carrying control section of a substrate processing apparatus of an embodiment of the present disclosure.

[0036] Figure 8Dis a process chart indicating a process performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure, and indicating a structure of conveying the wafer on the back side to the front side.

[0037] Figure 8E is a process chart indicating a process performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure, and indicating a structure of taking out the wafer on the front side.

[0038] Figure 8F is a process chart indicating a process performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure, and indicating a structure of moving the arm to the initial value.

[0039] Figure 9A is a flowchart indicating each process of the conveyance processing performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure.

[0040] Figure 9B is a flowchart indicating each process of the conveyance processing performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure.

[0041] Figure 9C is a flowchart indicating each process of the conveyance processing performed by the conveyance control section of the substrate processing apparatus of the embodiment of the present disclosure.

[0042] Explanation of Reference Numerals

[0043] 10: substrate processing apparatus, 203: processing container (example of processing section), 217: susceptor (example of placement table), 217a: susceptor (example of placement table), 217b: susceptor (example of placement table), 217c: susceptor (example of placement table), 217d: susceptor (example of placement table), 266: pin (example of lifting section), 320: conveyance apparatus, 322: shaft, 330: arm, 360: optical sensor (example of detection section), 421: conveyance control section, VR: vacuum robot (example of arrangement section), W: wafer (example of substrate). DETAILED DESCRIPTION

[0044] Use Figure 1 FIGS. 1 to 9 describe the substrate processing apparatus, the substrate processing method, and the program of the embodiment of the present disclosure. Further, the drawings used in the following description are schematic, and the relationship of the sizes of the elements, the ratios of the elements, and the like shown in the drawings are not necessarily consistent with reality. In addition, the relationship of the sizes of the elements, the ratios of the elements, and the like are not necessarily consistent among the plurality of drawings.

[0045] (Overall structure of substrate processing apparatus)

[0046] Figure 1The illustrated substrate processing apparatus 10 has a structure on a vacuum side that operates a substrate (wafer W formed of, for example, silicon) in a reduced pressure state, and a structure on an atmospheric pressure side that operates the wafer W in an atmospheric pressure state. The structure on the vacuum side mainly has a vacuum transfer chamber TM, load lock chambers LM1, LM2, and processing modules (processing mechanisms) PM1 to PM4 that process the wafer W as a substrate. The structure on the atmospheric pressure side mainly has an EFEM (Efficient Front End Module) and load portions LP1 to LP3.

[0047] Carriers CA1 to CA3 that house the wafers W are carried in and placed on the load portions LP1 to LP3 from the outside of the substrate processing apparatus 10, and are carried out to the outside of the substrate processing apparatus 10. Thus, for example, an unprocessed wafer W is taken out from the carrier CA1 placed on the load portion LP1, and after being carried in to the processing module PM1 via the load lock chamber LM1 and processed, the processed wafer W is returned to the carrier CA1 on the load portion LP1 in the reverse order.

[0048] [Structure on the vacuum side]

[0049] The vacuum transfer chamber TM is configured as a vacuum-tight structure that can withstand a negative pressure (reduced pressure) lower than the atmospheric pressure. In addition, in the present embodiment, the housing of the vacuum transfer chamber TM has a pentagonal shape in plan view, and is configured as a box shape with both ends in the vertical direction closed.

[0050] The load lock chambers LM1, LM2, and the processing modules PM1 to PM4 are arranged so as to surround the outer periphery of the vacuum transfer chamber TM. In addition, in the case where the processing modules PM1 to PM4 are not distinguished from each other, it is sometimes described as "processing module PM". In addition, in the case where the load lock chambers LM1, LM2 are not distinguished from each other, it is sometimes described as "load lock chamber LM". As for other structures (vacuum robot VR, arm VRA, and the like described later), the numerical value at the end is also sometimes omitted.

[0051] Inside the vacuum transfer chamber TM, there is provided one vacuum robot VR as a transfer unit that carries the wafer W in a reduced pressure state. The vacuum robot VR carries the wafer W between the load lock chambers LM and the processing modules PM by placing the wafer W on two sets of substrate support arms VRA (hereinafter referred to as "arms VRA"). In addition, the vacuum robot VR is configured to be able to be raised and lowered while maintaining the air tightness of the vacuum transfer chamber TM. Furthermore, the two sets of arms VRA are configured to be spaced apart in the vertical direction, to be able to be extended and contracted in the horizontal direction, and to be able to be moved by rotation in the relevant horizontal plane. The vacuum robot VR is one example of an arrangement portion.

[0052] Each processing module PM has four pedestals 217 on which the wafer W is placed, and four processing chambers 201 that process the wafer W placed on the pedestals 217 in a reduced pressure state (refer to FIG. 2).Figure 2 ). That is, each processing module PM has four processing chambers 201 that impart added value to the wafer W, such as etching using plasma, ashing, or film formation based on a chemical reaction. The pedestal 217 is an example of a stage.

[0053] The processing module PM is connected to the vacuum transfer chamber TM by a gate valve PGV that is an on-off valve. Thus, by opening the gate valve PGV, the processing module PM can perform transfer of the wafer W under reduced pressure between the processing module PM and the vacuum transfer chamber TM. In addition, by closing the gate valve PGV, the processing module PM can perform various substrate processing on the wafer W while maintaining the pressure and / or processing gas atmosphere within the processing module PM.

[0054] The load lock chamber LM functions as a preliminary chamber for moving the wafer W into the interior of the vacuum transfer chamber TM, or as a preliminary chamber for moving the wafer W out of the interior of the vacuum transfer chamber TM. A buffer stage (not shown) that temporarily supports the wafer W when the wafer W is moved in or out is provided in the interior of the load lock chamber LM. The buffer stage can be configured as a multilayer type slot that holds a plurality of (for example, two) wafers W.

[0055] In addition, the load lock chamber LM is connected to the vacuum transfer chamber TM by a gate valve LGV that is an on-off valve. In addition, the load lock chamber LM is connected to the atmospheric pressure transfer chamber EFEM described later by a gate valve LD that is an on-off valve. By closing the gate valve LGV on the vacuum transfer chamber TM side and opening the gate valve LD on the atmospheric pressure transfer chamber EFEM side, the wafer W is transferred under atmospheric pressure between the load lock chamber LM and the atmospheric pressure transfer chamber EFEM while maintaining the vacuum atmosphere within the vacuum transfer chamber TM.

[0056] In addition, the load lock chamber LM is configured to be able to withstand reduced pressure that is lower than atmospheric pressure, such as a vacuum state, and the interior thereof can be vacuum exhausted separately. Thus, after the gate valve LD on the atmospheric pressure transfer chamber EFEM side is closed and the interior of the load lock chamber LM is vacuum exhausted, the gate valve LGV on the vacuum transfer chamber TM side is opened. Thus, the wafer W is transferred under reduced pressure between the load lock chamber LM and the vacuum transfer chamber TM while maintaining the vacuum state within the vacuum transfer chamber TM.

[0057] [Structure on the atmospheric pressure side]

[0058] On the atmospheric pressure side of the substrate processing apparatus 10, an atmospheric pressure transfer chamber EFEM (Equipment Front End Module) and the load portions LP1 to LP3 that are carrier placement portions that place the carriers CA1 to CA3 are provided.

[0059] The atmospheric pressure transfer chamber EFEM is a front module connected to the load lock chambers LM1, LM2, and the carriers CA1 to CA3 are connected to the atmospheric pressure transfer chamber EFEM and are each a wafer storage container that stores, for example, 25 wafers W in one batch. A FOUP (Front Opening Unified Pod), for example, is used as such a carrier CA1 to CA3.

[0060] Further, in the case where each of the load portions LP1 to LP3 is not distinguished, it is sometimes referred to as "load portion LP". In addition, in the case where each of the carriers CA1 to CA3 is not distinguished, it is sometimes referred to as "carrier CA". As to other structures (carrier doors CAH1 to CAH3, carrier shutters CP1 to CP3, and the like, which will be described later), the last numerical value is also sometimes omitted.

[0061] Inside the atmospheric pressure transfer chamber EFEM, for example, one atmospheric pressure robot AR as a transfer unit is provided. The atmospheric pressure robot AR performs transfer of the wafers W between the load lock chamber LM1 and the carrier CA on the load portion LP1. The atmospheric pressure robot AR also has two sets of arms ARA, like the vacuum robot VR.

[0062] A carrier door CAH as a cap of the carrier CA is provided to the carrier CA. In a state where the carrier door CAH of the carrier CA placed on the load portion LP is open, the atmospheric pressure robot AR stores the wafers W inside the carrier CA via the substrate loading / unloading port CAA, and the atmospheric pressure robot AR also takes out the wafers W inside the carrier CA.

[0063] In addition, inside the atmospheric pressure transfer chamber EFEM, a carrier shutter CP for opening and closing the carrier door CAH is provided to each of the load portions LP. That is, the inside of the atmospheric pressure transfer chamber EFEM is connected to the load portions LP via the carrier shutters CP. The carrier shutter CP opens and closes the carrier door CAH by moving in the horizontal direction and the vertical direction together with the carrier door CAH in a state of being in close contact with the carrier door CAH.

[0064] In addition, inside the atmospheric pressure transfer chamber EFEM, an aligner AU as a substrate position correction device is provided, which is an orientation flat aligner that performs alignment of the crystal orientation of the wafers W. Further, a clean air unit (not shown) that supplies clean air to the inside of the atmospheric pressure transfer chamber EFEM is provided to the atmospheric pressure transfer chamber EFEM.

[0065] The loading portions LP are configured to place the carriers CA each housing a plurality of wafers W thereon. In the interior of each carrier CA, grooves (not shown) as the housing portions each housing a wafer W are provided, for example, in a quantity of 1 lot, 25 grooves. Each loading portion LP is configured to read and store a bar code or the like attached to the carrier CA and indicating a carrier ID identifying the carrier CA if the carrier CA is placed thereon.

[0066] [Control portion 16]

[0067] The substrate processing apparatus 10 is provided with a control portion 16 that comprehensively controls the substrate processing apparatus. The control portion 16 is configured in such a manner as to control each portion of the substrate processing apparatus 10. The control portion 16 is provided with an apparatus controller 18 as an operation portion, a conveyance system controller 31 as a conveyance control portion, a process controller 221 as a processing control portion, and a conveyance control portion 421.

[0068] -Apparatus controller 18-

[0069] The apparatus controller 18 and an operation display portion not shown are interfaces with an operator, and the apparatus controller 18 is configured to receive an operation by the operator, an instruction by the operator, via the operation display portion. An operation screen, various data, and the like are displayed on the operation display portion. Data displayed on the operation display portion is stored in a storage portion of the apparatus controller 18.

[0070] -Conveyance system controller 31-

[0071] The conveyance system controller 31 is configured to include robot controllers that control the vacuum robot VR and the atmospheric pressure robot AR, and to control conveyance control of the wafers W and execution of a job instructed by the operator.

[0072] In addition, the conveyance system controller 31 outputs control data (control instructions) at the time of conveying the wafers W, based on a conveyance recipe (recipe) made by the operator via the apparatus controller 18, for example, to the vacuum robot VR, the atmospheric pressure robot AR, various valves, switches, and the like. Also, the conveyance system controller 31 performs conveyance control of the wafers W inside the substrate processing apparatus 10. Further, details of the process controller 221 and the conveyance control portion 421 will be described later.

[0073] As Figure 1As shown, the control section 16 can be provided not only in the interior of the substrate processing apparatus 10 but also in the exterior of the substrate processing apparatus 10. Further, the apparatus controller 18, the conveyance system controller 31, and the process controller 221 as the processing control section of the processing module PM can be configured as a general-purpose computer such as a personal computer. In this case, each controller can be configured by installing a program in the general-purpose computer using a computer-readable recording medium (USB memory, DVD, etc.) in which the program is stored.

[0074] Further, the means for supplying the program for executing the processing can be arbitrarily selected. In addition to the supply via the prescribed recording medium, the supply can be made via a communication line, a communication network, a communication system, etc. In this case, for example, the program can be posted on a bulletin board of the communication network, and supplied via superposition on a carrier wave of the network. Further, by starting the program thus supplied, the processing can be executed under the control of an OS (Operating System) of the substrate processing apparatus 10, like other application programs, and thereby the processing can be executed.

[0075] 〔Processing Module PM〕

[0076] Each processing module PM is provided with four processing containers 203 for performing plasma processing on the wafer W. As shown, a processing furnace 202 constituting a processing chamber 201 is provided in the processing container 203. The processing container 203 is an example of the processing section. Figure 2

[0077] -Processing Container 203-

[0078] The processing container 203 is provided with an upper container 210 of a dome type made of quartz as a first container (hereinafter, also referred to as a quartz dome). The upper container 210 is open at the lower side, and the lower end of the upper container 210 is blocked by a base 217, so that the processing chamber 201 is formed in the interior of the upper container 210.

[0079] Further, a temperature sensor 280 such as a thermocouple is provided in the upper container 210, and configured to be able to detect the temperature of the upper container 210. The upper container 210 is formed of a nonmetallic material such as alumina (AI2O3) or quartz (SiO2), etc.

[0080] Further, the processing chamber 201 has a plasma generation space 201a (hereinafter, also referred to as a plasma space) in the interior of the processing chamber 201. Figure 2 ​The single-dot dashed line is above the coil 212, and a substrate processing space 201b is provided around it, which is connected to the plasma generation space 201a and is used to process the wafer W. The plasma generation space 201a, which serves as the space for generating plasma, is a space inside the processing chamber 201 that is above the lower end of the coil 212 and below the upper end of the coil 212.

[0081] On the other hand, the substrate processing space 201b (which serves as the space for the plasma processing wafer W) Figure 2 The space below the single-dot dashed line is the space below the lower end of coil 212. In this embodiment, it is configured such that the diameter of the plasma generation space 201a in the horizontal direction is approximately the same as the diameter of the substrate processing space 201b in the horizontal direction.

[0082] -Base 217-

[0083] At the bottom of the processing chamber 201 is a base 217 serving as a mounting section for placing the wafer W. The base 217 is formed of a non-metallic material such as aluminum nitride (AlN), ceramic, or quartz, and is configured to reduce metal contamination of films formed on the wafer W.

[0084] A heater 219, serving as a heating mechanism, is integrally embedded inside the base 217. The heater 219 is configured such that, when powered, it can heat the surface of the mounted wafer W to, for example, approximately 25°C to 750°C.

[0085] Impedance adjustment electrode 220 is disposed inside the base 217 to further improve the uniformity of the plasma density generated on the wafer W placed on the base 217. The impedance adjustment electrode 220 is grounded via an impedance variable mechanism 275, which serves as an impedance adjustment unit. The impedance variable mechanism 275 consists of a coil and a variable capacitor, configured such that by controlling the inductance and resistance of the coil and the capacitance value of the variable capacitor, the impedance can be varied within a range from approximately 0 Ω to the parasitic impedance value of the processing chamber 201.

[0086] The base 217 is provided with a base lifting mechanism 268 for raising and lowering the base 217. Additionally, the base 217 has a through hole 218. Furthermore, a pin 266 is provided; when the base 217 is moved downwards (double-dotted line in the figure), the pin 266 is inserted into the through hole 218 to lift the wafer W. The pin 266 is an example of a lifting mechanism.

[0087] Pin 266 is located on the lower base 211, and a lifting mechanism 214 is provided on the lower base 211 to make pin 266 rise and fall together with the lower base 211.

[0088] Further, details of the structure and the process of placing the wafer W on the four pedestals 217 provided in the processing module PM will be described later.

[0089] - gas supply section -

[0090] A gas supply head 236 is provided above the processing chamber 201, that is, at the upper portion of the upper vessel 210. The gas supply head 236 has a lid body 233 in the shape of a lid, a gas introduction port 234, a buffer chamber 237, an opening 238, a shield plate 240, and a gas blowout port 239. Further, the gas supply head 236 is configured in such a manner that a reaction gas can be supplied to the inside of the processing chamber 201. The buffer chamber 237 functions as a dispersion space that disperses the reaction gas introduced from the gas introduction port 234.

[0091] The gas supply head 236 is provided with a gas supply pipe 232 that is a supply pipe in which the downstream end of an oxygen-containing gas supply pipe 232a that supplies an oxygen-containing gas, the downstream end of a hydrogen-containing gas supply pipe 232b that supplies a hydrogen-containing gas, and the downstream end of a non-reactive gas supply pipe 232c that supplies a non-reactive gas are combined. As the oxygen-containing gas, for example, an oxygen (O2) gas, an ozone (O3) gas, an O2 gas + hydrogen (H2) gas, a water vapor (H2O) gas, a hydrogen peroxide (H2O2) gas, a nitrous oxide (N2O) gas, a nitric oxide (NO) gas, a nitrogen dioxide (NO2) gas, a carbon monoxide (CO) gas, a carbon dioxide (CO2) gas, or the like can be used. One or more of these can be used as the oxygen-containing gas. As the hydrogen-containing gas, for example, an H2 gas, an H2O gas, an H2O2 gas, a heavy hydrogen (D2) gas, or the like can be used. In addition, as the hydrogen-containing gas, a gas containing at least any one of these can be used. As the non-reactive gas, for example, a nitrogen (N2) gas, an argon (Ar) gas, a helium (He) gas, a neon (Ne) gas, a xenon (Xe) gas, or the like can be used. One or more of these can be used as the non-reactive gas.

[0092] The oxygen-containing gas supply pipe 232a is provided with an oxygen-containing gas supply source 250a, a mass flow controller (MFC) 252a as a flow control device, and a valve 253a as an on-off valve in this order from the upstream side.

[0093] The hydrogen-containing gas supply pipe 232b is provided with a hydrogen-containing gas supply source 250b, an MFC 252b, and a valve 253b in this order from the upstream side. The non-reactive gas supply pipe 232c is provided with a non-reactive gas supply source 250c, an MFC 252c, and a valve 253c in this order from the upstream side. The gas supply pipe 232, which is formed by the merging of the oxygen-containing gas supply pipe 232a, the hydrogen-containing gas supply pipe 232b, and the non-reactive gas supply pipe 232c, is provided with a valve 243a, and is connected to the upstream end of the gas introduction port 234.

[0094] The flow rates of the respective gases are adjusted by opening and closing the valves 253a, 253b, 253c, and 243a, and using the MFCs 252a, 252b, and 252c. The substrate processing apparatus 10 is configured so that the processing gas, such as the oxygen-containing gas, the hydrogen-containing gas, and the non-reactive gas, is supplied to the inside of the processing chamber 201 via the oxygen-containing gas supply pipe 232a, the hydrogen-containing gas supply pipe 232b, and the non-reactive gas supply pipe 232c.

[0095] The gas supply section (gas supply system) of the present embodiment is mainly composed of the gas supply head 236 (the lid 233, the gas introduction port 234, the buffer chamber 237, the opening 238, the shielding plate 240, and the gas blowout port 239), the oxygen-containing gas supply pipe 232a, the hydrogen-containing gas supply pipe 232b, the non-reactive gas supply pipe 232c, the MFCs 252a, 252b, and 252c, the valves 253a, 253b, 253c, and 243a.

[0096] In addition, the oxygen-containing gas supply system of the present embodiment is composed of the gas supply head 236, the oxygen-containing gas supply pipe 232a, the MFC 252a, and the valves 253a and 243a. Furthermore, the hydrogen-containing gas supply system of the present embodiment is composed of the gas supply head 236, the hydrogen-containing gas supply pipe 232b, the MFC 252b, and the valves 253b and 243a. In addition, the non-reactive gas supply system of the present embodiment is composed of the gas supply head 236, the non-reactive gas supply pipe 232c, the MFC 252c, and the valves 253c and 243a.

[0097] Furthermore, the substrate processing apparatus 10 of the present embodiment is configured to perform the oxidation process by supplying the oxygen-containing gas from the oxygen-containing gas supply system, but a nitrogen-containing gas supply system, which supplies a nitrogen-containing gas to the inside of the processing chamber 201, can be provided instead of the oxygen-containing gas supply system. According to the substrate processing apparatus 10 thus configured, the nitriding process can be performed instead of the oxidation process of the substrate. In this case, a nitrogen-containing gas supply source, such as an N2 gas supply source, is provided instead of the oxygen-containing gas supply source 250a, and the oxygen-containing gas supply pipe 232a is configured as a nitrogen-containing gas supply pipe.

[0098] - Exhaust Section -

[0099] A gas exhaust port 235 for exhausting reaction gas from the inside of the processing chamber 201 is provided in the side wall of the lower side of the processing container 203. An upstream end of a gas exhaust pipe 231 is connected to the gas exhaust port 235. In the gas exhaust pipe 231, an APC (Auto Pressure Controller) 242 as a pressure regulator (pressure regulating portion), a valve 243b as an on-off valve, and a vacuum pump 246 as a vacuum exhaust device are provided in this order from the upstream side. The exhaust portion of the present embodiment is mainly composed of the gas exhaust port 235, the gas exhaust pipe 231, the APC 242, and the valve 243b. Further, the vacuum pump 246 can also be included in the exhaust portion.

[0100] -Plasma generating portion-

[0101] A spiral-shaped resonance coil 212 as a first electrode is provided in the outer periphery of the processing chamber 201, that is, the outside of the side wall of the upper container 210, in a manner so as to surround the processing chamber 201. An RF sensor 272, a high-frequency power supply 273, and a matcher 274 for matching the impedance and the output frequency of the high-frequency power supply 273 are connected to the resonance coil 212. The plasma generating portion of the present embodiment is mainly composed of the resonance coil 212, the RF sensor 272, and the matcher 274. Further, the high-frequency power supply 273 can also be included in the plasma generating portion.

[0102] The high-frequency power supply 273 is used to supply high-frequency electric power (RF electric power) to the resonance coil 212. The RF sensor 272 is provided on the output side of the high-frequency power supply 273 and is used to monitor the information of the traveling wave and the reflected wave of the supplied high-frequency. The reflected wave electric power monitored by the RF sensor 272 is input to the matcher 274, which is used to control the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency electric power in such a manner that the reflected wave becomes minimum, based on the information of the reflected wave input from the RF sensor 272.

[0103] The high-frequency power supply 273 is provided with a power supply control unit (control circuit) including a high-frequency oscillation circuit and a preamplifier for specifying the oscillation frequency and the output, and an amplifier (output circuit) for amplifying to the specified output. The power supply control unit controls the amplifier based on the output conditions related to the frequency and the electric power set in advance by operating the panel. The amplifier supplies constant high-frequency electric power to the resonance coil 212 via a transmission line.

[0104] -Plasma generating portion-

[0105] In order to form a standing wave of a specified wavelength, the resonant coil 212 is configured with a diameter, winding pitch, and number of turns in a manner that resonates at a constant wavelength. That is, the electrical length of the resonant coil 212 is set to be an integer multiple (1, 2, ...) of the wavelength at a specified frequency of the high-frequency power supplied from the high-frequency power source 273.

[0106] The materials used to construct the resonant coil 212 include copper tubing, thin copper sheets, aluminum tubing, thin aluminum sheets, and materials obtained by vapor-depositing copper or aluminum onto a polymer tape. The resonant coil 212 is formed into a flat plate shape from an insulating material and is supported by multiple support members (not shown).

[0107] -Process Controller 221-

[0108] like Figure 2 As shown, the process controller 221 (hereinafter referred to as "controller 221"), which is the processing control unit, is configured to control APC 242, valve 243b, and vacuum pump 246 via signal line A. Furthermore, controller 221 is configured to control base lifting mechanism 268 via signal line B, and heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C. Moreover, controller 221 is configured to control RF sensor 272, high-frequency power supply 273, and matching device 274 via signal line E. Additionally, controller 221 is configured to control MFCs 252a-252c and valves 253a-253c and 243a via signal line F.

[0109] Moreover, such as Figure 3 As shown, the controller 221 is configured as a computer including a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, a storage device 221c, and an I / O interface 221d. The RAM 221b, storage device 221c, and I / O interface 221d are configured to exchange data with the CPU 221a via an internal bus 221e. An input / output device 222, configured as, for example, a touch panel or a display, is connected to the controller 221.

[0110] The storage device 221c is configured from, for example, a flash memory, an HDD (Hard Disk Drive), or the like. Inside the storage device 221c, a control program that controls the operation of the substrate processing apparatus 10, a process recipe in which steps, conditions, and the like of the substrate processing described later are recorded, and the like are stored in a readable manner. Various process recipes (process recipes), a chamber condition recipe described later as a pre-process recipe, and the like are combined in a manner such that the process controller 221 executes each step and can obtain a prescribed result, and function as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as a program, and are simply referred to as a program. In addition, in the case where the word program is used in the present specification, there are cases where only the process recipe alone is included, cases where only the control program alone is included, or cases where both are included. In addition, the RAM 221b is configured as a storage area (work area) that temporarily holds programs, data, and the like read out by the CPU 221a.

[0111] The I / O interface 221d is connected to the MFCs 252a to 252c, the valves 253a to 253c, 243a, 243b, the APC valve 242, the vacuum pump 246, the RF sensor 272, the high-frequency power supply 273, the matcher 274, the susceptor lift mechanism 268, the impedance variable mechanism 275, the heater power adjustment mechanism 276, and the like described above.

[0112] The CPU 221a is configured to read and execute the control program from the storage device 221c, and read the process recipe from the storage device 221c in accordance with the input of an operation instruction from the input / output device 222 or the like. In addition, the CPU 221a is configured to control, for example, the opening degree adjustment operation of the APC valve 242, the opening / closing operation of the valve 243b, and the start / stop of the vacuum pump 246 through the I / O interface 221d and the signal line A, the lift operation of the susceptor lift mechanism 268 through the signal line B, the supply amount adjustment operation (temperature adjustment operation) of the heater 219 by the heater power adjustment mechanism 276, the impedance value adjustment operation by the impedance variable mechanism 275, the operations of the RF sensor 272, the matcher 274, and the high-frequency power supply 273 through the signal line E, and the flow adjustment operations of various gases by the MFCs 252a to 252c and the opening / closing operations of the valves 253a to 253c, 243a through the signal line F, in accordance with the contents of the read process recipe.

[0113] The process controller 221 can be configured by installing the aforementioned program stored in an external storage device (e.g., a USB memory, a memory card, or other semiconductor memory) 223 onto a computer. The storage device 221c and the external storage device 223 constitute a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording media. In this specification, the use of the term "recording medium" may include only the storage device 221c, only the external storage device 223, or both. Furthermore, the program can be provided to the computer without using the external storage device 223, but instead using communication means such as the Internet or a dedicated line.

[0114] (Substrate processing process)

[0115] use Figure 4 The flowchart shown illustrates the substrate processing steps performed by the substrate processing apparatus 10. In this embodiment, the substrate processing steps are performed by the aforementioned processing module PM as a step in, for example, the manufacturing process of a semiconductor device. In the following description, the operation of each component constituting the processing module PM is controlled by the process controller 221.

[0116] [Substrate handling process S110]

[0117] Base lifting mechanism 268 Figure 2 The double-dotted line indicates that the base 217 is lowered. Then, the wafer W is supported on a pin 266 protruding from the upper surface of the base 217. Furthermore, the process of supporting the wafer W on the pin 266 will be described in detail later.

[0118] Furthermore, the base lifting mechanism 268, as Figure 2 The solid line indicates that the base 217 is raised. As a result, the lower end of the upper container 210 is sealed by the base 217, thus forming a processing chamber 201 inside the upper container 210. In this way, the wafer W is moved into the processing chamber 201.

[0119] [Heating and Vacuum Exhausting Process S120]

[0120] Next, the wafer W, which has been moved into the processing chamber 201, is heated. The heater 219 is preheated, and the wafer W is heated to a predetermined value, for example, within the range of 150 to 750°C, by placing the wafer W on a base 217 in which the heater 219 is embedded. Here, heating is performed so that the temperature of the wafer W is 600°C. Furthermore, during the heating of the wafer W, a vacuum pump 246 is used to evacuate the interior of the processing chamber 201 via a gas exhaust pipe 231, setting the pressure inside the processing chamber 201 to a predetermined value. The vacuum pump 246 operates at least until the substrate removal process S160, described later, is completed.

[0121] Further, the expression of a numerical range such as "150 to 750°C" in this specification means that the lower limit value and the upper limit value are included in the range. Thus, for example, "150 to 750°C" means "150°C or higher and 175°C or lower". The same applies to other numerical ranges.

[0122] 〔Reaction gas supply step S130〕

[0123] Next, the supply of the oxygen-containing gas and the hydrogen-containing gas is started as the reaction gas. Specifically, the valves 253a and 253b are opened, and the supply of the oxygen-containing gas and the hydrogen-containing gas into the inside of the processing chamber 201 is started while the flow rates are controlled by the MFCs 252a and 252b. At this time, the flow rate of the oxygen-containing gas is set to a prescribed value within a range of, for example, 20 to 2000 seem, preferably 20 to 1000 seem. In addition, the flow rate of the hydrogen-containing gas is set to a prescribed value within a range of, for example, 20 to 1000 seem, preferably 20 to 500 seem. As a more preferable example, it is preferable that the total flow rate of the oxygen-containing gas and the hydrogen-containing gas be 1000 seem, and the flow rate ratio be oxygen-containing gas / hydrogen-containing gas > 950 / 50. In addition, the opening degree of the APC 242 is adjusted to control the exhaust of the inside of the processing chamber 201 so that the pressure of the inside of the processing chamber 201 becomes a prescribed pressure within a range of, for example, 1 to 250 Pa, preferably 50 to 200 Pa, more preferably about 150 Pa. The inside of the processing chamber 201 is thus moderately exhausted, and the supply of the oxygen-containing gas and the hydrogen-containing gas is continued until the end of the plasma treatment step S140 described later.

[0124] 〔Plasma treatment step S140〕

[0125] After the pressure of the inside of the processing chamber 201 is stabilized, the application of high-frequency power to the resonant coil 212 is started from the high-frequency power supply 273 via the RF sensor 272. In the present embodiment, 27.12 MHz high-frequency power is supplied from the high-frequency power supply 273 to the resonant coil 212. The high-frequency power supplied to the resonant coil 212 is a prescribed power within a range of, for example, 100 to 5000 W, and is preferably set to 100 to 3500 W, more preferably to about 3500 W. In a case where the power is lower than 100 W, it is difficult to stably generate plasma discharge.

[0126] Thus, a high-frequency electric field is formed in the inside of the plasma generation space 201a to which the oxygen-containing gas and the hydrogen-containing gas are supplied, and by this electric field, a ring-shaped induced plasma having the highest plasma density is excited at a height position of the plasma generation space corresponding to the neutral point of the resonant coil 212. The oxygen-containing gas and the hydrogen-containing gas in the plasma state are dissociated, and reaction species such as oxygen radicals (oxygen active species) or oxygen ions containing oxygen, hydrogen radicals (hydrogen active species) or hydrogen ions containing hydrogen, and the like are generated.

[0127] As previously described, when the electrical length of the resonant coil 212 is the same as the wavelength of the high-frequency power, within the plasma generation space 201a, near the neutral point of the resonant coil 212, there is almost no capacitive coupling between the coil and the processing chamber walls and the mounting stage, and an annular induced plasma with extremely low potential is excited. Because of the generation of plasma with extremely low potential, it is possible to prevent the formation of a sheath layer on the walls and base 217 of the plasma generation space 201a. Therefore, in this embodiment, the ions in the plasma are not accelerated.

[0128] For a wafer W placed on a substrate 217 in a substrate processing space 201b, free radicals and unaccelerated ions generated by induced plasma are uniformly supplied to the grooves of the wafer W. The supplied free radicals and ions react uniformly with the sidewalls of the grooves of the wafer W, modifying the silicon layer on the surface into a silicon oxide layer with good step coverage.

[0129] After a predetermined processing time, such as 10 to 300 seconds, the power output from the high-frequency power supply 273 is stopped, thus halting the plasma discharge inside the processing chamber 201. Furthermore, valves 253a and 253b are closed to stop the supply of oxygen-containing gas and hydrogen-containing gas to the processing chamber 201. Through these steps, the plasma processing step S140 is completed.

[0130] [Vacuum exhaust process S150]

[0131] After the supply of oxygen-containing gas and hydrogen-containing gas is stopped, the interior of the processing chamber 201 is evacuated through the gas exhaust pipe 231. This expels the oxygen-containing gas and hydrogen-containing gas inside the processing chamber 201, as well as the waste gas generated from the reaction of these gases, to the outside of the processing chamber 201. Then, the opening of APC 242 is adjusted to adjust the pressure inside the processing chamber 201 to the same pressure (e.g., 100 Pa) as the vacuum transfer chamber (the destination of wafer W, not shown) adjacent to the processing chamber 201.

[0132] [Substrate removal process S160]

[0133] After the pressure inside the processing chamber 201 reaches the specified level, the base 217 is lowered to the wafer W transport position, so that the wafer W is supported on the wafer top pin 266. Figure 2 (The double-dotted line). Then, the wafer W is moved out of the processing chamber 201. Through the above steps, the substrate processing process of this embodiment is completed. In addition, the process of moving the processed wafer W out will be described in detail later.

[0134] (Main structural components)

[0135] Next, useFigure 5 Figure 9 illustrates the structure where the processing module PM loads the wafer W and places it onto the four bases 217, and the structure where the processed wafer W is removed from the processing module PM. Furthermore, in each figure, arrow W represents the horizontal direction and the width direction of the processing module PM, arrow D represents the horizontal direction and the depth direction of the processing module PM, and arrow H represents the vertical direction and the up-down direction of the processing module PM. The width direction, depth direction, and up-down direction are orthogonal to each other.

[0136] The processing module PM includes: four bases 217; a transport device 320 for transporting the wafer W into the processing module PM; an optical sensor 360 for detecting the transported wafer W; the aforementioned pins 266; and a transport control unit 421 for controlling each part.

[0137] [Pedestal 217]

[0138] like Figure 5 As shown, four bases 217 of the processing module PM are arranged in both the width and depth directions. Furthermore, the four bases 217 are arranged at equal intervals around the center C1. For ease of explanation, the base 217 located near the front in the depth direction and on one side in the width direction will be referred to as base 217a, and the base 217 located on the other side in the width direction relative to base 217a will be referred to as base 217b. Additionally, the base 217 located on the inner side in the depth direction and on the other side in the width direction will be referred to as base 217c, and the base 217 located on one side in the width direction relative to base 217c will be referred to as base 217d. Furthermore, the last letter is omitted unless otherwise specified for each base 217.

[0139] In addition, through holes 218 are formed in each base 217 for inserting pins 266. The through holes 218 are formed at the three vertices of the triangle, with one through hole 218 formed on the side closer to the center C1 and two through holes 218 formed on the side farther from the center C1.

[0140] In this structure, by utilizing Figure 2 The lifting mechanism 214 shown causes the pin 266 to move up and down, with the pin 266 moving towards a protruding position (see reference) protruding from the upper surface of the base 217. Figure 7A ) and the storage location within the through hole 218 (refer to Figure 7C )move.

[0141] [Conveying device 320]

[0142] like Figure 5As shown, the conveyance device 320 that conveys the wafer W is provided with: a shaft 322 that extends in the vertical direction; four arms 330 whose base ends are attached to the shaft 322 and extend in the horizontal direction; and a drive source 336 that rotates the shaft 322 in the circumferential direction. The four arms 330 are arranged at the same intervals in the circumferential direction of the shaft 322 and extend in the radial direction of the shaft 322. In addition, the arms 330 in the initial position are arranged between the adjacent pedestals 217. Furthermore, the tip end portions of the arms 330 are in a V shape with one side of the circumferential direction of the shaft 322 open. Moreover, the drive source 336 is a stepping motor that can control the rotation angle and the rotation speed using a pulse signal, for example.

[0143] In this configuration, in a state where the pin 266 is moved to the protruding position, as shown in FIG. 6A, the pin 266 supports the wafer W. In this state, if the arms 330 are rotated counterclockwise by 45 degrees, as shown in FIG. 6B, the arms 330 enter between the pedestals 217 and the wafer W. In addition, in this state, since the tip end portions of the arms 330 are in a V shape, the arms 330 do not interfere with the pin 266. Furthermore, if the pin 266 is moved to the housed position, as shown in FIG. 6C, the arms 330 support the wafer W. Then, the wafer W is conveyed by rotating the arms 330 that support the wafer W. Figure 7A Figure 7B Figure 7C

[0144] [Optical sensor 360]

[0145] The optical sensors 360 that detect the wafer W being conveyed are provided in plurality and arranged below the arms 330 in the vertical direction. Furthermore, as shown in FIG. 7, the optical sensors 360 are arranged in a manner of separating the respective pedestals 217. The optical sensors 360 are an example of the detection unit. Figure 7B

[0146] In this configuration, the optical sensors 360 detect the wafer W that is conveyed by the arms 330 and passes above the optical sensors 360.

[0147] [Conveyance control unit 421]

[0148] The conveyance control unit 421 is configured to control the vacuum robot VR, the lift mechanism 214 that lifts the pin 266, the drive source 336 that rotates the arms 330, and the optical sensors 360 that detect the wafer W being conveyed, respectively, by a wired or wireless manner, not shown, as shown in FIG. 8. Figure 6

[0149] In addition, the conveyance control unit 421 is configured as a computer provided with a CPU 421a, a RAM 421b, a storage device 421c, and an I / O interface 421d. The RAM 421b, the storage device 421c, and the I / O interface 421d are configured in a manner that can exchange data with the CPU 421a via an internal bus 421e.​​​​​

[0150] The storage device 421c is composed of, for example, flash memory or an HDD. The storage device 421c stores transport programs and other data that control the actions of the vacuum robot VR, the lifting mechanism 214, the drive source 336, etc. Additionally, RAM 421b is configured as a storage area (working area) to temporarily hold programs, data, etc., read from the CPU 421a. The I / O interface 421d connects to the vacuum robot VR, the lifting mechanism 214, the drive source 336, and the optical sensor 360, etc.

[0151] (The process of placing the wafer W onto the substrate 217)

[0152] Next, use Figure 9A - Figure 9C The flowchart shown illustrates the process of moving the wafer W into the processing module PM and placing the wafer W on the four bases 217, as well as the process of moving the processed wafer W out of the processing module PM. This process is implemented by the CPU 421a of the transfer control unit 421 reading the transfer program stored in RAM 421b or external storage device 423 and controlling each part.

[0153] Pin 266 is positioned in a prominent location, such as Figure 5 As shown, the arm 330 in its initial position is positioned between adjacent bases 217.

[0154] From this state onwards, in step S210, Figure 1 The vacuum robot VR shown causes the arm VRA to operate, as... Figure 7A As shown, the wafer W is supported by pins 266 protruding from bases 217a and 217b. In other words, the vacuum robot VR supports the wafer W by pins 266 protruding from the near-front side of bases 217a and 217b in the depth direction. Thus, pins 266 protruding from the near-front side of bases 217a and 217b support the wafer W. Furthermore, the near-front side in the depth direction is the side closest to the vacuum robot VR.

[0155] In step S220, by rotating arm 330 counterclockwise by 45 degrees, as... Figure 7B As shown, arm 330 enters between bases 217a and 217b and chip W.

[0156] In step S230, by moving pin 266 to the storage position, as... Figure 7C As shown, arm 330 supports wafer W. Specifically, arm 330 supports wafer W near the front side.

[0157] In step S240, by rotating arm 330 counterclockwise by 180 degrees, as... Figure 7DAs shown, the arm 330 carries the supported wafer W above the base 217 to the inner side in the depth direction. In addition, the optical sensor 360 detects the wafer W passing above the optical sensor 360. Specifically, the optical sensor 360 detects the timing at which the wafer W supported by the rotating arm 330 passes above the optical sensor 360. Here, the passing timing refers to the timing at which the wafer W entering above the optical sensor 360 passes above the optical sensor 360.

[0158] Further, the CPU 421a detects whether a carry deviation has occurred in the wafer W due to the rotation of the arm 330, based on the detection result. Specifically, a reference for detecting whether a carry deviation has occurred in the wafer W is stored in advance in the RAM 421b, and the CPU 421a detects whether a carry deviation has occurred in the wafer W based on the reference. In other words, the CPU 421a detects whether the relative position of the arm 330 with respect to the wafer W has deviated from the initial position, that is, whether a carry deviation has occurred. In addition, in the case where a carry deviation has occurred in the wafer W, the CPU 421a derives the amount of deviation of the relative position of the arm 330 with respect to the wafer W from the initial position, that is, the amount of carry deviation, based on the detection result of the optical sensor 360.

[0159] In the case where a carry deviation has occurred in the wafer W, the process proceeds to step S250, and in the case where no carry deviation has occurred in the wafer W, the process proceeds to step S280. Hereinafter, the case where a carry deviation has occurred in the wafer W carried above the base 217d will be described. In the present embodiment, a carry deviation has occurred in the wafer W carried above the base 217d. Since a carry deviation has occurred in the wafer W carried above the base 217d, as shown in Figure 7D As shown, the relative position of the wafer W with respect to the base 217d deviates from the reference position, that is, the amount of misalignment of the wafer W greatly exceeds the allowable value when viewed from above.

[0160] In step S250, the pin 266 of the base 217d above which the wafer W having only a carry deviation is carried is moved to the protruding position. Thus, as shown in Figure 7E The pin 266 protruding from the base 217d supports the wafer W having a carry deviation.

[0161] In step S260, the relative position of the arm 330 with respect to the wafer W is corrected by rotating the arm 330 in the direction in which a carry deviation has occurred by the amount of carry deviation, as shown in Figure 7F In addition, the wafer W carried above the base 217c is maintained in the state of being supported by the arm 330, and thus the relative position of the arm 330 with respect to the wafer W does not change.

[0162] In step S270, the pin 266 of the base 217d is moved toward the storage position, as follows: Figure 7F As shown, the arm 330 supports the wafer W on the base 217d. Furthermore, by rotating the arm 330 in the opposite direction to the rotation direction in step S260, the conveying offset is achieved, as shown... Figure 7G As shown, the misalignment of the wafer W relative to the base 217d falls within the allowable value. Furthermore, by rotating the arm 330 in the opposite direction, as... Figure 7H As shown, the misalignment of the chip W relative to the base 217c falls within the allowable value.

[0163] In step S280, by moving all the pins 266 of the base 217 to the protruding position, as... Figure 7I As shown, pins 266 protruding from the inner side of the bases 217c and 217d in the depth direction support the wafer W.

[0164] In step S290, Figure 1 The vacuum robot VR shown causes the arm VRA to operate, as... Figure 7J As shown, the wafer W is supported by pins 266 protruding from the bases 217a and 217b. Thus, the pins 266 protruding from all of the bases 217 support the wafer W.

[0165] In step S300, by rotating arm 330 clockwise by 45 degrees, as... Figure 7K As shown, arm 330 returns to its initial position.

[0166] In this state, the base 217 is moved to the sealing position at the lower end of the upper container 210 to perform the aforementioned substrate processing step. Furthermore, if the substrate processing step is completed, the base 217 positioned at the sealing position moves downwards, thereby causing pins 266 to protrude from the base 217. The pins 266 protruding from the base 217 support the processed wafer W (see reference 1). Figure 7K ).

[0167] The following describes the process of removing the processed wafer W from the processing module PM.

[0168] In step S310, by rotating arm 330 counterclockwise by 45 degrees, as... Figure 8A As shown, arm 330 enters between base 217 and chip W.

[0169] In step S320, the arm 330 supports the wafer W by moving the protruding pin 266 to the retracted position. Furthermore, after rotating the arm 330 counterclockwise by 180 degrees, the pin 266 in the retracted position moves to the protruding position. Thus, as... Figure 8BThe pins 266 protruding from the bases 217a, 217b on the front side in the depth direction support the wafer W that is initially carried into the processing module PM by the vacuum robot VR.

[0170] In step S330, Figure 1 The vacuum robot VR shown makes the arm VRA operate as Figure 8C As shown, the wafer W supported on the pins 266 protruding from the bases 217a, 217b is taken out. Specifically, the wafer W supported on the pins 266 protruding from the base 217a is taken out, and then the wafer W supported on the pins 266 protruding from the base 217b is taken out. In other words, the wafers W supported on the pins 266 protruding from the bases 217a, 217b on the front side in the depth direction are sequentially taken out.

[0171] In step S340, the pins 266 disposed in the protruding position are moved to the receiving position. Thereby, the pins 266 protruding from the bases 217c, 217d on the inside in the depth direction support the wafer W. Also, after the arm 330 is rotated counterclockwise by 180 degrees, the pins 266 disposed in the receiving position are moved to the protruding position. Thereby, as shown in Figure 8D As shown, the pins 266 protruding from the bases 217a, 217b on the front side in the depth direction support the wafer W. Here, the wafers W supported by the pins 266 protruding from the bases 217a, 217b are the wafers W that are finally carried into the processing module PM by the vacuum robot VR.

[0172] In step S350, Figure 1 The vacuum robot VR shown makes the arm VRA operate as Figure 8E As shown, the wafer W supported on the pins 266 protruding from the bases 217a, 217b is taken out. Specifically, the wafer W supported on the pins 266 protruding from the base 217a is taken out, and then the wafer W supported on the pins 266 protruding from the base 217b is taken out. In other words, the wafers W supported on the pins 266 protruding from the bases 217 on the front side in the depth direction are sequentially taken out.

[0173] In this way, the wafers W are carried out of the processing module PM in the order of being carried in. Also, the processed wafers W carried out of the processing module PM are returned to the carrier CA1 on the load portion LP1 in the reverse order of the aforementioned steps.

[0174] In step S360, the arm 330 is rotated counterclockwise by 45 degrees, and as shown in Figure 8F As shown, the arm 330 returns to the initial value. In this way, the series of processes ends. Also, by repeating the series of processes, the plurality of wafers W are subjected to the film formation processing.

[0175] (SUMMARY)

[0176] As explained above, in the substrate processing apparatus 10, in a case where the transport deviation of the wafer W transported by the arm 330 is detected, the pin 266 that is rising supports the wafer W transported above the susceptor 217, and separates the wafer W from the arm 330 by a gap. Further, after the arm 330 is rotated by the deviation amount to correct the position of the arm 330 with respect to the wafer W, the pin 266 is lowered, and thus the arm 330 supports the wafer W. Then, by reversely rotating the arm 330 by the deviation amount, the misalignment of the wafer W with respect to the susceptor 217 is corrected. In this way, the misalignment of the wafer W with respect to the susceptor 217 can be suppressed.

[0177] Further, in the substrate processing apparatus 10, by suppressing the misalignment of the wafer W with respect to the susceptor 217, the reduction in the in-plane uniformity of the film quality of the wafer W and the reduction in the in-plane uniformity of the film thickness can be suppressed.

[0178] Further, in the substrate processing apparatus 10, the arm 330 is provided four, and by correcting the transport deviation of the wafer W for each arm 330, the misalignment of the wafer W with respect to the susceptor 217 is corrected for each arm 330. In this way, even in a case where the arms 330 are provided a plurality, the correction of the misalignment of the wafer W can be performed for each arm.

[0179] Further, in the substrate processing apparatus 10, the arm 330 is provided four, and by correcting the transport deviation of the wafer W for each arm 330, the misalignment of the wafer W with respect to the susceptor 217 is corrected for each arm 330. By thus correcting the misalignment of the wafer W for each arm 330, the deviation within a lot can be minimized.

[0180] Further, in the substrate processing apparatus 10, the optical sensor 360 detects the timing at which the wafer W supported by the arm 330 passes through a predetermined position. Thereby, the transport control section 421 can detect the deviation amount and the deviation direction of the wafer W based on the detection result.

[0181] Further, although the present disclosure has been described in detail with respect to specific embodiments, the present disclosure is not limited to the embodiments, and it is obvious to those skilled in the art that other various embodiments can be obtained within the scope of the present disclosure. For example, in the above-described embodiments, examples in which the surface of the wafer W is subjected to oxidation treatment and nitridation treatment using plasma have been described, but the present disclosure is not limited to these treatments, and can be applied to all technologies in which the wafer W is subjected to treatment using plasma. For example, can be applied to modification treatment, doping treatment, reduction treatment of an oxide film, etching treatment for a film formed on the surface of the wafer W, and ashing treatment of a resist, which are performed using plasma.

[0182] Further, in the above embodiment, the optical sensor 360 is used as the detection unit that detects the wafer W, but a camera and an image processing device can be used as the detection unit, and the position of the wafer W supported on the arm 330 rotating can be detected by image recognition.

[0183] Further, in the above embodiment, although not particularly described, the conveyance control unit 421 can control the vacuum robot VR based on the detection result in a case where the conveyance deviation of the wafer W is detected, and correct the position at which the wafer W is conveyed into the inside of the processing module PM. For example, the wafer W conveyed into the inside of the processing module PM can be previously offset in the other direction based on the detection result that the wafer W is offset in one direction. Thus, the misalignment of the wafer W inside the processing module PM is less likely to be corrected, and therefore, the working hours for correcting the misalignment of the wafer W can be reduced.

[0184] Further, in the above embodiment, although not particularly described, the misalignment of the wafer W with respect to the susceptor 217 can be corrected by correcting the conveyance deviation that occurs when the arm 330 conveys the processed wafer W. Thus, the misalignment of the wafer W that occurs when the wafer W is returned to the carrier CA1 on the load portion LP1 is suppressed.

[0185] Further, in the above embodiment, although not particularly described, the wafer W placed on the susceptor 217a, 217b on the front side in the device depth direction can be formed with the first film, the wafer W placed on the susceptor 217c, 217d on the back side in the device depth direction can be formed with the second film, and the first film and the second film can be laminated on the wafer W. In this case, the same wafer W is conveyed by the arm 330 multiple times.

[0186] Further, in the above embodiment, the arm 330 is provided with four, but can be provided with one to three, or more than five. In the case of one, the effects due to the plurality of arms are not generated.

[0187] Further, in the above embodiment, the relative position between the arm 330 and the wafer W is corrected by rotating the arm 330 by the offset amount in a state where the arm 330 is separated from the wafer W by the interval, but the relative position between the arm 330 and the wafer W can be corrected by rotating the arm 330 by the offset amount in a state where the wafer W is fixed.

Claims

1. A substrate processing apparatus, characterized in that, have: A conveying device having a shaft that rotates vertically and an arm that extends horizontally from the shaft and supports a substrate, the conveying device conveying the substrate above a loading stage by rotating the arm supporting the substrate. The detection unit detects the substrate supported on the arm and being transported. The transfer control unit is configured to detect the transfer offset of the substrate relative to the arm based on the detection result of the detection unit, and control the transfer device in a manner that corrects the misalignment of the substrate relative to the mounting stage. as well as The processing unit processes the substrate placed on the mounting stage. The conveying device includes a lifting section for raising and lowering the substrate relative to the mounting platform. When the transport control unit detects a transport offset of the substrate, it uses the lifting unit to raise the substrate, which is supported by the arm and transported above the mounting platform, to create a gap between the substrate and the arm. After rotating the arm to correct its position, it uses the lifting unit to lower the substrate so that the substrate is supported by the arm, thereby correcting the transport offset of the substrate and the misalignment of the substrate relative to the mounting platform.

2. The substrate processing apparatus according to claim 1, characterized in that, The arm is provided in multiple parts. The transport control unit corrects the misalignment relative to the mounting stage for each substrate supported by the arm and being transported.

3. The substrate processing apparatus according to claim 1, characterized in that, The detection unit detects the timing of the substrate, supported on the rotating arm, passing through a predetermined position. The transport control unit corrects the misalignment of the substrate relative to the mounting stage based on the detection results of the detection unit.

4. The substrate processing apparatus according to claim 1, characterized in that, The detection unit uses image recognition to detect the substrate supported on the rotating arm. The transport control unit corrects the misalignment of the substrate relative to the mounting stage based on the detection results of the detection unit.

5. The substrate processing apparatus according to claim 1, characterized in that, The arm includes a configuration unit that positions the substrate at a location on which the substrate is supported. When the conveying control unit detects a conveying offset of the substrate, it controls the placement unit based on the detection result to correct the position of the substrate placed on the arm.

6. The substrate processing apparatus according to claim 1, characterized in that, The process described is an etching process.

7. The substrate processing apparatus according to claim 1, characterized in that, The treatment is a film-forming treatment.

8. A substrate processing method, characterized in that, It has the following processes: A process of using a conveying device to move the substrate above a mounting table by rotating an arm that supports the substrate. The conveying device has a shaft that rotates in a vertical direction, an arm that extends horizontally from the shaft and supports the substrate, and a lifting part that raises and lowers the substrate relative to the mounting table. The process of inspecting the substrate supported on the arm and being transported; The process of detecting the transfer offset of the substrate relative to the arm based on the detection results, and controlling the transfer device to correct the misalignment of the substrate relative to the mounting stage. A process for processing the substrate placed on the mounting stage; as well as In the event of a detected transport offset of the substrate, the lifting unit is used to raise the substrate, which is supported by the arm and transported above the mounting stage, to a distance from the arm. After the arm is rotated to correct its position, the lifting unit is used to lower the substrate to support it on the arm, thereby correcting the transport offset of the substrate and the misalignment of the substrate relative to the mounting stage.

9. The substrate processing method according to claim 8, characterized in that, The process described is an etching process.

10. The substrate processing method according to claim 8, characterized in that, The treatment is a film-forming treatment.

11. A semiconductor manufacturing method, characterized in that, The substrate processing method of claim 8 was used.

12. A recording medium, which is a computer-readable recording medium, characterized in that, The document contains a program that uses a computer to cause the substrate processing apparatus to perform the following steps: The step of using a conveying device to move the substrate above a mounting table by rotating an arm supporting the substrate, the conveying device having a shaft that rotates in a vertical direction, the arm that extends horizontally from the shaft and supports the substrate, and a lifting part that raises and lowers the substrate relative to the mounting table. The step of detecting the substrate supported on the arm and being transported; The step of detecting the transfer offset of the substrate relative to the arm based on the detection results, and controlling the transfer device to correct the misalignment of the substrate relative to the mounting stage; A step of processing the substrate placed on the mounting stage; as well as When a transport offset of the substrate is detected, the lifting unit is used to raise the substrate, which is supported by the arm and transported above the mounting stage, to a distance from the arm. After the arm is rotated to correct its position, the lifting unit is used to lower the substrate to support it on the arm, thereby correcting the transport offset of the substrate and the misalignment of the substrate relative to the mounting stage.

13. The recording medium according to claim 12, characterized in that, The program uses a computer to cause the substrate processing apparatus to perform the following steps: based on the detection results, controlling the configuration unit that positions the substrate at the location of the substrate support on the arm, and correcting the position of the substrate positioned on the arm.

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