Vacuum Evaporation Coating Apparatus and Adjustment Method for Its Emission Mechanism

Abstract

The present application discloses a vacuum evaporation film forming device and an adjustment method for its emission mechanism, relating to the technical field of vacuum coating. The vacuum evaporation film forming device includes an emission mechanism, a holding mechanism, and a deflection focusing mechanism. The emission mechanism includes a filament and a cover plate having a receiving groove. The receiving groove has a bottom surface, an opening, and side surfaces. The projection of the contour of the opening on the plane where the bottom surface is located is outside the bottom surface, and the filament is disposed on the bottom surface. The side surfaces include a first surface and a second surface that are oppositely arranged and connected to the high-voltage negative electrode. The first direction is parallel to the bottom surface. There is a first included angle between the first surface and the bottom surface, and a second included angle between the second surface and the bottom surface. The first included angle and / or the second included angle is adjustable. The deflection focusing mechanism includes a magnet for generating a magnetic field and a magnetic conduction component for guiding or changing the spatial distribution of the magnetic field. The emission mechanism of the vacuum evaporation film forming device provided in this specification can effectively adjust the shape and size of the electron beam spot, and obtain a spot with a shape meeting the requirements.

Description

Technical Field

[0001] This specification relates to the technical field of vacuum coating, and particularly to a vacuum evaporation film forming device and an adjustment method for its emission mechanism. Background Art

[0002] Electron beam evaporation technology is a technology that directly heats the evaporation material in a crucible by an electron beam under vacuum conditions, vaporizes the evaporation material, transports it to a substrate, and condenses it on the substrate to form a thin film. Electron beam evaporation can evaporate high melting point materials, has higher thermal efficiency, larger beam current density, and faster evaporation speed than general resistance heating evaporation. The prepared thin film has high purity, good quality, and the thickness can be accurately controlled. Therefore, it is widely used in the preparation of various optical material thin films such as high purity thin films and conductive glass.

[0003] The core of electron beam evaporation lies in forming a stable and focused electron beam. In the prior art, a metal cover plate with an inclined surface is usually placed around the emission filament to form a cathode, and the metal cover plate is connected to the high voltage negative electrode. After the emission filament is heated, electrons escape. The high voltage electric field causes the escaped electrons to be emitted from the cathode at high speed. Since electrons are negatively charged, the inclined surface of the cover plate changes the spatial electric field distribution, causing the electron beam to converge towards the center. When the electron beam spot is relatively round, the film material utilization rate is high and the evaporation is uniform. However, the existing structure cannot effectively adjust the shape and size of the electron beam spot. Summary of the Invention

[0004] In view of the deficiencies of the prior art, an object of this specification is to provide a vacuum evaporation film forming device and an adjustment method for its emission mechanism. The emission mechanism of this vacuum evaporation film forming device can accelerate the electron beam and shoot it out, and at the same time can effectively adjust the shape and size of the electron beam spot to obtain a spot with a shape meeting the requirements.

[0005] To achieve the above object, an embodiment of this specification provides a vacuum evaporation film forming device, including:

[0006] An emission mechanism for emitting an electron beam, the emission mechanism includes a filament that can emit electrons after being energized and a cover plate having a receiving groove for receiving the filament. The receiving groove has a bottom surface and an opening that are oppositely arranged, and a side surface surrounding between the bottom surface and the opening. The projection of the contour of the opening on the plane where the bottom surface is located is outside the bottom surface, and the filament is arranged on the bottom surface. The side surface includes a first surface and a second surface that are oppositely arranged in a first direction and are connected to the high voltage negative electrode. The first direction is parallel to the bottom surface. There is a first included angle between the first surface and the bottom surface, and a second included angle between the second surface and the bottom surface. The first included angle and / or the second included angle is adjustable;

[0007] A holding mechanism for holding an evaporation material;

[0008] A deflection and focusing mechanism for constraining and focusing the electron beam and guiding it into the containing mechanism; the deflection and focusing mechanism includes a magnet for generating a magnetic field and a magnetic conduction component for guiding or changing the spatial distribution of the magnetic field.

[0009] As a preferred embodiment, the magnet and the containing mechanism are located on different sides of the plane where the bottom surface is located.

[0010] As a preferred embodiment, the magnetic conduction component includes two magnetic conduction plates respectively arranged at two ends of the magnet and at least two magnetic poles respectively connected to the magnetic conduction plates.

[0011] As a preferred embodiment, the plane where the magnetic conduction plate is located is perpendicular to the plane where the bottom surface is located, and the plane where the magnetic conduction plate is located is perpendicular to the extending direction of the magnet.

[0012] As a preferred embodiment, the emitting mechanism is located at the central position between the two magnetic conduction plates, the number of magnetic poles is even and they are symmetrically distributed in pairs with respect to the middle plane of the two magnetic conduction plates.

[0013] As a preferred embodiment, the magnetic poles are located on the side of the magnetic conduction plate facing away from the containing mechanism and do not exceed the magnetic conduction plate.

[0014] As a preferred embodiment, the vacuum evaporation film forming device further includes a scanning coil arranged on the side of the emitting mechanism facing away from the containing mechanism, the electron beam can pass through the scanning coil, and the scanning coil is used to provide a scanning magnetic field for scanning the electron beam on the surface of the containing mechanism.

[0015] As a preferred embodiment, the vacuum evaporation film forming device further includes a turntable circumferentially provided with a plurality of containing mechanisms, the turntable is located on the side of the bottom surface facing away from the opening, and the turntable can rotate around the axial direction.

[0016] This embodiment also provides a method for adjusting an emitting mechanism of a vacuum evaporation film forming device. The emitting mechanism includes a filament that can emit electrons after being energized and a cover plate having a receiving groove for receiving the filament. The receiving groove has a bottom surface and an opening arranged oppositely, and a side surface surrounding between the bottom surface and the opening; the projection of the contour of the opening on the plane where the bottom surface is located is located outside the bottom surface, and the filament is arranged on the bottom surface; the side surface includes a first surface and a second surface that are oppositely arranged in a first direction and are connected to the high-voltage negative electrode, and the first direction is parallel to the bottom surface; a first included angle is formed between the first surface and the bottom surface, and a second included angle is formed between the second surface and the bottom surface, and the first included angle and / or the second included angle is adjustable; the adjusting method includes the following steps:

[0017] When the electron beam spot in the holding mechanism is wider in the first direction, reduce the magnitude of the first angle and / or the second angle.

[0018] As a preferred embodiment, the side surface includes a third surface and a fourth surface that are oppositely arranged in the second direction and are connected to the high-voltage negative electrode. The second direction is parallel to the bottom surface and perpendicular to the first direction; there is a third angle between the third surface and the bottom surface, and a fourth angle between the fourth surface and the bottom surface. The third angle and / or the fourth angle are adjustable; the plane where the bottom surface of the holding mechanism is located is perpendicular to the second direction; the adjustment method further includes the following steps:

[0019] When the electron beam spot in the holding mechanism is wider in the third direction, reduce the magnitude of the third angle and / or the fourth angle; wherein, the third direction is perpendicular to the plane where the bottom surface is located.

[0020] Beneficial effects:

[0021] For the vacuum evaporation film-forming device provided in this embodiment, its emission mechanism includes a filament and a cover plate. The cover plate is provided with a receiving groove for accommodating the filament. The receiving groove has a bottom surface and an opening that are oppositely arranged, and a side surface surrounding the bottom surface and the opening. The filament is arranged on the bottom surface; the projection of the contour of the opening on the plane where the bottom surface is located is outside the bottom surface, that is, the contour size of the intersection of the side surface and the bottom surface is smaller than the contour size of the intersection of the side surface and the opening. Thus, the side surface can change the spatial electric field distribution and converge the electron beam to the center. The side surface includes a first surface and a second surface that are oppositely arranged in the first direction and are connected to the high-voltage negative electrode, which can accelerate and emit the electron beam. The electron beam is constrained and focused by the deflection focusing mechanism and guided into the holding mechanism, so that the evaporation material in the holding mechanism is vaporized. After the evaporation material is vaporized, it moves towards the surface to be coated and finally forms a film. There is a first angle between the first surface and the bottom surface, and a second angle between the second surface and the bottom surface. By adjusting the first angle and / or the second angle, the shape and size of the electron beam spot can be effectively adjusted, and a spot with a shape meeting the requirements can be obtained.

[0022] Referring to the following description and the drawings, specific embodiments of the present invention are disclosed in detail, indicating the ways in which the principles of the present invention can be adopted. It should be understood that the embodiments of the present invention are not limited thereby in scope.

[0023] Features described and / or illustrated for one embodiment can be used in the same or similar way in one or more other embodiments, combined with the features in other embodiments, or replace the features in other embodiments.

[0024] It should be emphasized that the term "comprising / including" as used herein refers to the presence of features, whole units, steps or components, but does not exclude the presence or addition of one or more other features, whole units, steps or components. Description of the Drawings

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0026] Figure 1 It is a schematic structural diagram of a vacuum evaporation film forming device provided in this embodiment;

[0027] Figure 2 It is a schematic structural diagram of an emission mechanism provided in this embodiment;

[0028] Figure 3 It is a schematic plan view of a receiving groove provided in this embodiment;

[0029] Figure 4 It is a schematic plan view of the receiving groove from another perspective provided in this embodiment;

[0030] Figure 5 It is a schematic structural diagram of a light spot with a non-conforming shape;

[0031] Figure 6 It is a schematic structural diagram of another light spot with a non-conforming shape;

[0032] Figure 7 It is a schematic structural diagram of a light spot with a conforming shape.

[0033] Explanation of the Reference Numerals in the Drawings:

[0034] 100, vacuum evaporation film forming device; 10, emission mechanism; 1, filament; 2, cover plate; 21, receiving groove; 22, bottom surface; 23, side surface; 24, opening; 231, first surface; 232, second surface; 233, third surface; 234, fourth surface; 235, first angle; 236, second angle; 237, third angle; 238, fourth angle; 3, containing mechanism; 4, light spot; 5, electron beam; 6, magnet; 7, magnetic conduction plate; 8, magnetic conduction pole; 9, scanning coil; 11, turntable; 12, evaporation path; X, first direction; Y, second direction; Z, third direction. Detailed Embodiments

[0035] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0036] It should be noted that when an element is referred to as "disposed on" another element, it can be directly on the other element or there may also be another element in the middle. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be another element in the middle at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation manner.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the specification of the present invention herein are only for the purpose of describing specific implementation manners and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0038] Please refer to Figure 1 The embodiment of the present application provides a vacuum evaporation film-forming device 100, including an emission mechanism 10, a containing mechanism 3 and a deflection focusing mechanism.

[0039] Among them, the emission mechanism 10 is used to emit an electron beam 5. As Figure 2As shown, the emission mechanism 10 includes a filament 1 that can emit electrons after being energized, and a cover plate 2 having a receiving groove 21 for receiving the filament 1. The receiving groove 21 has a bottom surface 22 and an opening 24 that are oppositely arranged, and a side surface 23 that surrounds between the bottom surface 22 and the opening 24. The filament 1 is disposed on the bottom surface 22. The projection of the contour of the opening 24 on the plane where the bottom surface 22 is located is located outside the bottom surface 22, that is, the contour size of the intersection of the side surface 23 and the bottom surface 22 is smaller than the contour size of the intersection of the side surface 23 and the opening 24, so that the side surface 23 can change the spatial electric field distribution and converge the electron beam 5 towards the center. The side surface 23 includes a first surface 231 and a second surface 232 that are oppositely arranged in the first direction X and are connected to the high-voltage negative electrode, and can accelerate and emit the electron beam 5. The electron beam 5 is constrained and focused by the deflection focusing mechanism and guided into the containing mechanism 3, so that the evaporation material contained in the containing mechanism 3 is vaporized. After the evaporation material is vaporized, it moves towards the surface to be coated and finally forms a film. The first direction X is parallel to the bottom surface 22. There is a first included angle 235 between the first surface 231 and the bottom surface 22, and a second included angle 236 between the second surface 232 and the bottom surface 22. The first included angle 235 and / or the second included angle 236 is adjustable. By adjusting the first included angle 235 and / or the second included angle 236, the shape and size of the light spot 4 of the electron beam 5 can be effectively adjusted, and a light spot 4 with a shape meeting the requirements can be obtained. The deflection focusing mechanism includes a magnet 6 for generating a magnetic field and a magnetic conduction component for guiding or changing the spatial distribution of the magnetic field.

[0040] In one embodiment, the first surface 231 and the second surface 232 are respectively fixedly connected to the bottom surface 22, and the angles of the first included angle 235 and / or the second included angle 236 cannot be adjusted after being fixedly connected. At this time, before vacuum evaporation coating, according to the shape of the required light spot 4, the angles of the first included angle 235 and / or the second included angle 236 need to be adjusted first. After the adjustment is completed, the first surface 231 and the second surface 232 are respectively fixedly connected to the bottom surface 22 (for example, the fixed connection can be realized by welding or integral molding process), forming a structurally fixed emission mechanism 10, and the subsequent vacuum evaporation coating process is carried out using the emission mechanism 10. For different vacuum evaporation coating devices, emission mechanisms 10 with different shapes meeting the requirements are designed.

[0041] In another embodiment, the first surface 231 and the second surface 232 are respectively movably fixedly connected to the bottom surface 22, and the angles of the first included angle 235 and / or the second included angle 236 can be adjusted at any time. After the adjustment, the first surface 231 and the second surface 232 are respectively fixedly connected to the bottom surface 22. After the first surface 231 and the second surface 232 are respectively fixedly connected to the bottom surface 22, the fixed connection relationship can be released, and the angles of the first included angle 235 and / or the second included angle 236 can be adjusted.

[0042] The filament 1 in this embodiment is a metal filament, such as a tungsten filament. The emission mechanism 10 is connected to the high-voltage negative electrode, and a high-voltage electric field of about 1 kV to 10 kV is applied to the surface of the emission mechanism 10, enabling the electrons escaping from the filament 1 to be emitted at high speed from the emission mechanism 10.

[0043] Among them, the magnet 6 can be an electromagnet or a permanent magnet. In one embodiment, the magnet 6 is an iron core wound with a coil, used to generate a magnetic field so that the electron beam 5 is deflected by the Lorentz force. The magnet 6 and the holding mechanism 3 are located on different sides of the plane where the bottom surface 22 is located. The holding mechanism 3 in this embodiment can be a crucible or any other container that can hold the evaporation material and has an opening that allows the evaporation material to escape and can receive the electron beam 5.

[0044] In one embodiment, as Figure 3 shown, the first angle 235 and the second angle 236 can be set to be of equal size. When adjusting the angles, the sizes of the first angle 235 and the second angle 236 are adjusted simultaneously so that the central position of the light spot 4 of the electron beam 5 in the first direction X remains unchanged. In another embodiment, the sizes of the first angle 235 and the second angle 236 are not related, and it is possible to choose to adjust only the size of the first angle 235 or only the size of the second angle 236. In this embodiment, only one of the first angle 235 and the second angle 236 needs to be adjusted, which is convenient for operation.

[0045] In one embodiment, the first surface 231 and the second surface 232 are both planes, and the sizes and shapes of the first surface 231 and the second surface 232 are the same, which is convenient for making the spatial electric field distribution more uniform.

[0046] In this embodiment, the side surface 23 further includes a third surface 233 and a fourth surface 234 that are oppositely arranged in the second direction Y and are connected to the high-voltage negative electrode, which can accelerate the electron beam 5 and shoot it out. Among them, the second direction Y is parallel to the bottom surface 22 and intersects with the first direction X. There is a third angle 237 between the third surface 233 and the bottom surface 22, and there is a fourth angle 238 between the fourth surface 234 and the bottom surface 22. The third angle 237 and / or the fourth angle 238 is adjustable. By adjusting the third angle 237 and / or the fourth angle 238, the shape and size of the light spot 4 of the electron beam 5 can be effectively adjusted to obtain a light spot 4 with a shape that meets the requirements.

[0047] In one embodiment, the third surface 233 and the fourth surface 234 are respectively fixedly connected to the bottom surface 22, and after the fixed connection, the angles of the third angle 237 and / or the fourth angle 238 cannot be adjusted any more. At this time, before vacuum evaporation coating, according to the shape of the required light spot 4, the angles of the third angle 237 and / or the fourth angle 238 need to be adjusted first. After the adjustment is completed, the third surface 233 and the fourth surface 234 are respectively fixedly connected to the bottom surface 22 (for example, the fixed connection can be realized by welding or integral molding process), forming a structurally fixed emission mechanism 10, and the subsequent vacuum evaporation coating process is carried out using the emission mechanism 10. For different vacuum evaporation coating devices, emission mechanisms 10 with different shapes meeting the requirements are designed.

[0048] In another embodiment, the third surface 233 and the fourth surface 234 are respectively movably and fixedly connected to the bottom surface 22, and the angles of the third angle 237 and / or the fourth angle 238 can be adjusted at any time. After the adjustment, the third surface 233 and the fourth surface 234 are respectively fixedly connected to the bottom surface 22. After the third surface 233 and the fourth surface 234 are respectively fixedly connected to the bottom surface 22, the fixed connection relationship can be released, so that the angles of the third angle 237 and / or the fourth angle 238 are adjustable.

[0049] In one implementation manner, as Figure 4 shown, the third angle 237 and the fourth angle 238 can be set to be equal in size. When adjusting the angle, the sizes of the third angle 237 and the fourth angle 238 are adjusted simultaneously, so that the central position of the light spot 4 of the electron beam 5 in the third direction Z remains unchanged. In another implementation manner, the sizes of the third angle 237 and the fourth angle 238 are not related, and it can be selected to only adjust the size of the third angle 237 or only adjust the size of the fourth angle 238. In this embodiment, only one of the third angle 237 and the fourth angle 238 needs to be adjusted, which is convenient for operation.

[0050] In one embodiment, both the third surface 233 and the fourth surface 234 are planes, and the sizes and shapes of the third surface 233 and the fourth surface 234 are the same, which is convenient for making the spatial electric field distribution more uniform.

[0051] It should be noted that, as Figure 1 shown, in this embodiment, the electron beam 5 emitted by the filament 1 finally irradiates on the crucible containing the evaporation material, so that the evaporation material is vaporized and moves along the evaporation path 12 to the surface to be coated to finally form a film. Among them, the plane where the bottom surface 22 of the emission mechanism 10 is located is perpendicular to the third direction Z, and the containing surface of the crucible is perpendicular to the second direction Y. The first direction X, the second direction Y and the third direction Z are perpendicular to each other in pairs. Preferably, the second direction Y is the vertical direction, and the first direction X and the third direction Z are two directions parallel to the horizontal plane.

[0052] In this embodiment, as Figure 2 shown, the cover plate 2 is square, and the first surface 231, the second surface 232, the third surface 233, and the fourth surface 234 are all flat surfaces and have the same size and shape. In other embodiments, the cover plate 2 can be a regular polygon, such as a regular hexagon, a regular octagon, etc.

[0053] Specifically, as Figure 2 shown, both ends of the first surface 231 are adjacent to the third surface 233 and the fourth surface 234 respectively, and both ends of the second surface 232 are adjacent to the third surface 233 and the fourth surface 234 respectively. When adjusting the sizes of the respective angles, the position of the edge where the side surface 23 and the bottom surface 22 intersect remains unchanged, that is, with the edge where the side surface 23 and the bottom surface 22 intersect as the axis, the first surface 231, the second surface 232, the third surface 233, or the fourth surface 234 is rotated, so as to achieve the effect of adjusting the sizes of the respective angles.

[0054] In this embodiment, the first surface 231, the second surface 232, the third surface 233, and the fourth surface 234 are arranged around the filament 1, the first angle 235 and the second angle 236 are kept equal, and the third angle 237 and the fourth angle 238 are kept equal. Thus, there are two independent tilt angles, the first angle 235 and the third angle 237, that can be adjusted, as Figure 3 and Figure 4 . The shape of the light spot 4 in the crucible can be independently adjusted in two different directions (the first direction X and the third direction Z). That is, when the light spot 4 of the electron beam 5 is not circular, the tilt angles, the first angle 235 and the third angle 237, can be independently adjusted, so as to obtain a relatively circular light spot 4 in the crucible.

[0055] It should be noted that when adjusting the first angle 235, the second angle 236 is adjusted simultaneously to ensure that the first angle 235 and the second angle 236 are equal; when adjusting the third angle 237, the fourth angle 238 is adjusted simultaneously to ensure that the third angle 237 and the fourth angle 238 are equal.

[0056] In this embodiment, as Figure 1 shown, the magnetic conduction assembly includes two magnetic conduction plates 7 respectively arranged at both ends of the magnet 6, and at least two magnetic conduction poles 8 respectively connected to the magnetic conduction plates 7. The magnetic conduction plates 7 guide out the magnetic field generated by the magnet 6, and the magnetic conduction poles 8 change the spatial magnetic field distribution, constrain and focus the electron beam 5 and guide it into the crucible, so as to heat and evaporate the material.

[0057] Preferably, the plane where the magnetic conduction plate 7 is located is perpendicular to the plane where the bottom surface 22 is located, and the plane where the magnetic conduction plate 7 is located is perpendicular to the extending direction of the magnet 6. That is, the magnet 6 extends along the first direction X, and the plane where the magnetic conduction plate 7 is located is perpendicular to the first direction X.

[0058] As Figure 1 shown, the emission mechanism 10 is located at the central position between the two magnetic conduction plates 7, and the number of the magnetic poles 8 is even and they are symmetrically distributed in pairs with respect to the middle plane of the two magnetic conduction plates 7. Preferably, the magnetic poles 8 are located on the side of the magnetic conduction plates 7 away from the containing mechanism 3 and do not exceed the magnetic conduction plates 7, so that the magnetic poles 8 will not interfere with the evaporation path 12, and the coating effect of vacuum evaporation coating can be optimized.

[0059] As Figure 1 shown, the vacuum evaporation coating device 100 further includes a scanning coil 9 disposed on the side of the emission mechanism 10 away from the containing mechanism 3. The electron beam 5 can pass through the scanning coil 9, and the scanning coil 9 is used to provide a scanning magnetic field for scanning the electron beam 5 on the surface of the containing mechanism 3.

[0060] Further, the vacuum evaporation coating device 100 further includes a turntable 11 provided with a plurality of containing mechanisms 3 circumferentially. The turntable 11 is located on the side of the bottom surface 22 away from the opening 24, and the turntable 11 can rotate around the axial direction. This axial direction is the second direction Y. The scanning coil 9 enables the electron beam 5 to scan back and forth, left and right on the surface of the crucible. When the material in one crucible is completely evaporated, the turntable 11 rotates, and the electron beam 5 is incident on the next crucible to continue evaporation coating.

[0061] The embodiment of the present application further provides an adjustment method for the emission mechanism 10 of a vacuum evaporation coating device 100, and the adjustment method includes the following steps:

[0062] Step S100: When the light spot 4 of the electron beam 5 in the containing mechanism 3 is wider in the first direction X, reduce the magnitudes of the first angle 235 and / or the second angle 236.

[0063] Specifically, as Figure 5 shown, when the light spot 4 of the electron beam 5 in the crucible is wider in the first direction X, reduce the magnitudes of the first angle 235 and the second angle 236, so as to obtain Figure 7 the relatively round light spot 4 shown.

[0064] Specifically, the adjustment method further includes the following steps:

[0065] Step S200: When the light spot 4 of the electron beam 5 in the containing mechanism 3 is wider in the third direction Z, reduce the magnitudes of the third angle 237 and / or the fourth angle 238.

[0066] Specifically, as Figure 6 shown, when the spot 4 of the electron beam 5 in the crucible is wider in the third direction Z, the magnitudes of the third angle 237 and the fourth angle 238 are reduced, so that a relatively round spot 4 as Figure 7 shown can be obtained.

[0067] It should be noted that in the description of this specification, the terms "first", "second", etc. are only used for descriptive purposes and to distinguish similar objects, and there is no sequence between them, nor can they be understood as indicating or implying relative importance. In addition, in the description of this specification, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0068] Any numerical value cited herein includes all values from the lower value to the upper value increasing in increments of one unit between the lower limit value and the upper limit value, provided that there is an interval of at least two units between any lower value and any higher value. For example, if the value of the number of components or process variables (such as temperature, pressure, time, etc.) is stated to be from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, then the purpose is to illustrate that values such as 15 to 85, 22 to 68, 43 to 51, 30 to 32, etc. are also explicitly listed in this specification. For values less than 1, a unit is appropriately considered to be 0.0001, 0.001, 0.01, 0.1. These are merely examples intended to be clearly expressed, and it can be considered that all possible combinations of the numerical values listed between the lowest value and the highest value are explicitly set forth in this specification in a similar manner.

[0069] Unless otherwise stated, all ranges include the endpoints and all numbers between the endpoints. The "about" or "approximate" used in conjunction with a range applies to both endpoints of the range. Thus, "about 20 to 30" is intended to cover "about 20 to about 30", including at least the specified endpoints.

[0070] All articles and references disclosed, including patent applications and publications, are incorporated herein by reference for various purposes. The term "consisting essentially of" describing a combination should include the identified elements, components, parts or steps, as well as other elements, components, parts or steps that do not substantially affect the basic novel features of the combination. Using the terms "comprising" or "including" to describe the combinations of elements, components, parts or steps herein also contemplates embodiments consisting essentially of these elements, components, parts or steps. By using the term "may" herein, it is intended to indicate that any of the attributes described as "may" included are optional.

[0071] Multiple elements, components, parts, or steps can be provided by a single integrated element, component, part, or step. Alternatively, a single integrated element, component, part, or step may be separated into discrete multiple elements, components, parts, or steps. The disclosure of "a" or "an" used to describe an element, component, part, or step does not preclude the presence of other elements, components, parts, or steps.

[0072] It should be understood that the above description is for illustrative purposes and not for limitation. Many embodiments and many applications other than the examples provided will be apparent to those skilled in the art upon reading the above description. Therefore, the scope of the present teachings should not be determined with reference to the above description, but rather should be determined with reference to the appended claims and the full scope of equivalents to which those claims are entitled. For the sake of completeness, all articles and references, including patent applications and publications, are incorporated herein by reference. The omission of any aspect of the subject matter disclosed herein from the foregoing claims is not a waiver of that subject matter, nor should it be assumed that the inventor did not consider that subject matter to be a part of the disclosed inventive subject matter.

Claims

1. A vacuum evaporation film forming device, comprising: An emitting mechanism for emitting an electron beam, the emitting mechanism comprising a filament capable of emitting electrons after being energized and a cover plate having a receiving groove for receiving the filament, the receiving groove comprising a bottom surface and an opening arranged opposite to each other, and a side surface arranged between the bottom surface and the opening; the projection of the contour of the opening on the plane where the bottom surface is located is located outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface arranged opposite to each other in a first direction and connected to a high-voltage negative electrode, the first direction being parallel to the bottom surface; a first angle is formed between the first surface and the bottom surface, a second angle is formed between the second surface and the bottom surface, and the first angle and / or the second angle are adjustable; A holding mechanism for holding evaporation materials; the side surface further comprises a third surface and a fourth surface which are arranged opposite to each other in a second direction and connected to the high-voltage negative electrode, the second direction is parallel to the bottom surface and perpendicular to the first direction; a third angle is formed between the third surface and the bottom surface, a fourth angle is formed between the fourth surface and the bottom surface, and the third angle and / or the fourth angle are adjustable; the plane where the bottom surface of the holding mechanism is located is perpendicular to the second direction; A deflection and focusing mechanism is used to confine and focus the electron beam and guide it into the containing mechanism; the deflection and focusing mechanism includes a magnet for generating a magnetic field and a magnetic conductive component for guiding or changing the spatial distribution of the magnetic field. 2 . The vacuum evaporation film-forming device according to claim 1 , wherein the magnet and the containing mechanism are located on different sides of the plane where the bottom surface is located. 3 . The vacuum evaporation film-forming device according to claim 1 , wherein the magnetic conductive component comprises two magnetic conductive plates respectively disposed at two ends of the magnet, and at least two magnetic conductive poles respectively connected to the magnetic conductive plates. 4 . According to the vacuum evaporation film forming device of claim 3 , the plane where the magnetic conductive plate is located is perpendicular to the plane where the bottom surface is located, and the plane where the magnetic conductive plate is located is perpendicular to the extension direction of the magnet.

5. According to the vacuum evaporation film forming device of claim 4, the launching mechanism is located at the center position between the two magnetic conductive plates, and the magnetic conductive poles have an even number and are symmetrically distributed in pairs about the middle plane of the two magnetic conductive plates. 6 . The vacuum evaporation film-forming device according to claim 3 , wherein the magnetic conductive pole is located on a side of the magnetic conductive plate away from the containing mechanism and is not higher than the magnetic conductive plate.

7. The vacuum evaporation film-forming device according to claim 1 further includes a scanning coil arranged on the side of the emitting mechanism away from the containing mechanism, the electron beam can pass through the scanning coil, and the scanning coil is used to provide a scanning magnetic field that enables the electron beam to scan the surface of the containing mechanism. 8 . The vacuum evaporation film-forming device according to claim 1 , further comprising a turntable with a plurality of containing mechanisms arranged circumferentially, wherein the turntable is located on a side of the bottom surface away from the opening, and the turntable can rotate around an axial direction.

9. A method for adjusting an emitting mechanism of a vacuum evaporation film-forming device, wherein the emitting mechanism comprises a filament capable of emitting electrons after being energized and a cover plate having a receiving groove for receiving the filament, wherein the receiving groove comprises a bottom surface and an opening arranged opposite to each other, and a side surface arranged between the bottom surface and the opening; the projection of the contour of the opening on the plane where the bottom surface is located is located outside the bottom surface, and the filament is arranged on the bottom surface; the side surface comprises a first surface and a second surface arranged opposite to each other in a first direction and connected to a high-voltage negative electrode, wherein the first direction is parallel to the bottom surface; a first angle is formed between the first surface and the bottom surface, and a second angle is formed between the second surface and the bottom surface, wherein the first angle and / or the second angle are adjustable; the side surface further comprises a third surface and a fourth surface arranged opposite to each other in a second direction and connected to a high-voltage negative electrode, wherein the second direction is parallel to the bottom surface and perpendicular to the first direction; a third angle is formed between the third surface and the bottom surface, and a fourth angle is formed between the fourth surface and the bottom surface, wherein the third angle and / or the fourth angle are adjustable; the plane where the bottom surface of the containing mechanism is located is perpendicular to the second direction; the adjustment method comprises the following steps: When the electron beam spot in the containing mechanism is wider in the first direction, reducing the size of the first angle and / or the second angle; When the electron beam spot in the containing mechanism is wider in the third direction, the third angle and / or the fourth angle is reduced; wherein the third direction is perpendicular to the plane where the bottom surface is located.

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