Light emitting display

Abstract

Light emitting display. A light emitting display apparatus according to aspects of the present disclosure can include a first driving transistor and a second driving transistor spaced apart from each other on a substrate, a first anode connected to the first driving transistor and overlapping the second driving transistor, a second anode connected to the second driving transistor, and a shield metal between the second driving transistor and the first anode. The second anode can have a smaller area than the first anode, and the shield metal can reduce a parasitic capacitance related to the second anode and the first anode.

Description

Technical Field

[0001] This disclosure relates to a light-emitting display. Background Technology

[0002] Display devices are used in a variety of fields, including personal portable devices and devices installed in vehicles, as well as computer monitors and TVs. Therefore, in addition to the traditional rectangular shape, display devices are also implemented in various shapes (e.g., elliptical) (hereinafter referred to as "different shapes").

[0003] Furthermore, as display devices, there has recently been a demand for self-emissive display devices, such as light-emitting display devices.

[0004] In self-emissive display devices, light-emitting elements emit light without an additional light source. Various methods have been proposed to optimize light usage by diversifying the arrangement of light-emitting elements.

[0005] In light-emitting display devices, there may be differences in subpixel size, which can lead to the overlap of anodes of one color and transistors of another color. This overlap of anodes and transistors can cause parasitic coupling in the overlap region between the anodes of one color and the transistors of another color. Summary of the Invention

[0006] To prevent parasitic coupling between subpixels of different sizes, in the light-emitting display device disclosed herein, a shielding metal can be formed at the overlapping portion between an anode of one color and a transistor of another color at adjacent subpixels.

[0007] A shielding metal can be formed to prevent electrical coupling caused by the overlap of adjacent driving transistors that emit light of the first color in a predetermined area and light-emitting elements of the second color.

[0008] A light-emitting display device according to an embodiment of the present disclosure may include: a first driving transistor and a second driving transistor spaced apart from each other on a substrate, a first anode connected to the first driving transistor and overlapping the second driving transistor, a second anode having an area smaller than the first anode and connected to the second driving transistor, and a shielding metal between the second driving transistor and the first anode.

[0009] Appendix 1. A light-emitting display comprising:

[0010] A first driving transistor and a second driving transistor spaced apart from each other on a substrate;

[0011] A first anode, which is connected to the first driving transistor and overlaps with the second driving transistor;

[0012] A second anode, the second anode being connected to the second driving transistor; and

[0013] The shielding metal between the second driving transistor and the first anode.

[0014] Appendix 2. In the light-emitting display according to Appendix 1, the second driving transistor includes a gate electrode, an active layer, a source electrode, and a drain electrode, and the gate electrode of the second driving transistor overlaps with the first anode and the shielding metal.

[0015] Note 3. The light-emitting display according to Note 1, wherein the shielding metal is connected to the first power line.

[0016] Note 4. In the light-emitting display according to Note 3, the first power line is parallel to the data line and overlaps with the first anode.

[0017] Note 5. The light-emitting display according to Note 2, wherein the shielding metal is disposed between the first planarization layer and the second planarization layer, and the first planarization layer and the second planarization layer are interposed between the gate electrode and the first anode.

[0018] Note 6. The light-emitting display according to Note 2, wherein the second anode has an area smaller than that of the first anode and the shielding metal has an area larger than the overlapping area of ​​the first anode and the gate electrode.

[0019] Note 7. The light-emitting display according to Note 1 further includes:

[0020] A dam that exposes the light-emitting portions of the first anode and the second anode and overlaps with the edges of the first anode and the second anode; and

[0021] An organic layer and a cathode are disposed on the first anode and the second anode of the light-emitting portion and on the embankment.

[0022] Note 8. The light-emitting display according to Note 1, wherein the first anode and the second anode are formed on the same layer, and at least one of the first anode and the second anode includes a reflective electrode.

[0023] Note 9. The light-emitting display according to Note 1, wherein the first anode and the second anode correspond to light-emitting portions of different colors.

[0024] Note 10. The light-emitting display according to Note 3, wherein the first power line supplies a constant voltage.

[0025] Note 11. The light-emitting display according to Note 1, wherein the first driving transistor and the second driving transistor are P-type transistors.

[0026] Note 12. The light-emitting display according to Note 1, wherein the first driving transistor and the second driving transistor are oxide transistors.

[0027] Appendix 13. A light-emitting display comprising:

[0028] A first driving transistor and a second driving transistor spaced apart from each other on a substrate;

[0029] A first anode connected to the first driving transistor and overlapping with the second driving transistor, the first anode including a blue light-emitting portion;

[0030] A second anode, spaced apart from the first anode and connected to the second driving transistor, includes a green light-emitting portion; and

[0031] A conductive material disposed between the second driving transistor and the first anode.

[0032] Note 14. The light-emitting display according to Note 13, wherein the first anode has an area much larger than that of the second anode.

[0033] Note 15. The light-emitting display according to Note 13, wherein the second driving transistor has a gate electrode, an active layer, a source electrode and a drain electrode, and the gate electrode of the second driving transistor overlaps with the first anode and the conductive material.

[0034] Note 16. The light-emitting display according to Note 13, wherein the conductive material is connected to a first power line.

[0035] Note 17. The light-emitting display according to Note 16, wherein the first power line is parallel to the data line and overlaps with the first anode.

[0036] Note 18. The light-emitting display according to Note 15, wherein the conductive material is disposed between the first planarization layer and the second planarization layer, and the first planarization layer and the second planarization layer are interposed between the gate electrode and the first anode.

[0037] Note 19. The light-emitting display according to Note 15, wherein the conductive material has an area larger than the overlapping area of ​​the first anode and the gate electrode.

[0038] Note 20. The light-emitting display according to Note 13 further includes:

[0039] A dam that exposes the blue and green light-emitting portions and overlaps with the edges of the first and second anodes; and

[0040] An organic layer and a cathode are disposed on the first anode, the second anode, and the embankment.

[0041] The first anode and the second anode are formed on the same layer, and at least one of the first anode and the second anode includes a reflective electrode. Attached Figure Description

[0042] Figure 1 This is a perspective view showing a light-emitting display device according to aspects of this disclosure.

[0043] Figure 2 It is shown Figure 1 The plan view of the substrate shown.

[0044] Figure 3 This is a plan view illustrating the configuration of a thin-film transistor array in a portion of a light-emitting display device according to aspects of this disclosure.

[0045] Figure 4 It is shown Figure 3 The plan view of the anode is shown.

[0046] Figure 5 It is a circuit diagram of a sub-pixel according to aspects of this disclosure.

[0047] Figure 6 It is along Figure 4 An exemplary cross-sectional view taken from line I-I'.

[0048] Figure 7 It is along Figure 4 An exemplary cross-sectional view taken from line II-II'. Detailed Implementation

[0049] In the following description, aspects of this disclosure will be described with reference to the accompanying drawings. Throughout the specification, the same reference numerals will be used to refer to the same or similar parts. In the following description of this disclosure, detailed descriptions of known functions and configurations incorporated herein will be omitted where such descriptions might obscure the subject matter of this disclosure. Furthermore, for ease of drafting the specification, the component names used in the following description have been chosen, and these component names may differ from those of actual product components.

[0050] In the accompanying drawings used to explain exemplary aspects of this disclosure, for example, the illustrated shapes, dimensions, scales, angles, and quantities are given by way of example and are therefore not limited to the disclosure of this disclosure. Throughout this disclosure, the same reference numerals designate the same constituent elements. Furthermore, in the following description of this disclosure, detailed descriptions of known functions and configurations incorporated herein will be omitted where such descriptions might make the subject matter of this disclosure considerably unclear. The terms “comprising,” “including,” and / or “having” as used in this specification do not exclude the presence or addition of other elements unless used with the term “only.” The singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0051] When interpreting a component, even without a separate explicit description, it is interpreted as including the tolerance range.

[0052] When describing positional relationships, for example, when using terms such as “on,” “above,” “below,” “next to,” etc. to describe the positional relationship between two parts, one or more other parts may be located between the two parts, unless the terms “directly” or “closely” are used.

[0053] In the description of various aspects of this disclosure, when describing temporal relationships, for example, when using terms such as “after,” “following,” “next,” “before,” etc. to describe the temporal relationship between two actions, the actions may not occur sequentially unless the terms “directly” or “exactly” are used.

[0054] In the following description of the embodiments, "first" and "second" are used to describe various components, but these components are not limited by these terms. These terms are used to distinguish one component from another. Therefore, the first component mentioned in the following description may be a second component within the technical spirit of this disclosure.

[0055] Corresponding features of the various aspects of this disclosure can be linked and combined with each other in part or in whole, and various technical links and their drivers are possible. These various aspects can be implemented independently of each other or can be implemented in relation to each other.

[0056] Although the following description primarily refers to organic light-emitting display devices as light-emitting display devices according to aspects of this disclosure, the materials used to form the light-emitting elements in the display device are not limited to organic materials. In some cases, the light-emitting material can be an organic material, an inorganic material such as quantum dots or nitride semiconductors, or a composite material of inorganic and organic materials such as perovskites.

[0057] The terminology described later is defined in consideration of the implementation of this disclosure and may vary depending on the intent or habit of the user and operator. The definitions of the terminology should be based on this specification.

[0058] The transistors constituting the pixel circuits in this disclosure may include at least one of oxide thin-film transistors (TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polycrystalline silicon (LTPS) TFTs.

[0059] The following exemplary aspects will be described based on organic light-emitting displays. However, the aspects of this disclosure are not limited to organic light-emitting display devices, but can be applied to inorganic light-emitting display devices that include inorganic light-emitting materials. For example, the aspects of this disclosure can also be applied to quantum dot display devices.

[0060] Expressions such as "first," "second," and "third" are terms used to distinguish configurations in the embodiments, and the aspects are not limited to these terms. Therefore, it should be noted that, according to embodiments, even the same terms may refer to different components. For example, Figure 1 The first sub-pixel circuit and Figure 2 The first sub-pixel circuit is a term used to distinguish components in a diagram, and may not refer to the same component.

[0061] In the following description, aspects of this disclosure will be described with reference to the accompanying drawings.

[0062] Figure 1 This is a block diagram of a display device according to aspects of this disclosure.

[0063] An electroluminescent display can be used as a display device 1000 according to aspects of this disclosure. Organic light-emitting diode (OLED) display devices, quantum dot OLED display devices, or inorganic light-emitting diode (LED) display devices can be used as electroluminescent displays.

[0064] Figure 1 This is a perspective view of a light-emitting display device according to the present disclosure. Figure 2 yes Figure 1 A plan view of the substrate.

[0065] like Figure 1 and Figure 2 As shown, the light-emitting display device 1000 of this disclosure may include a display panel 1100, a scan driver 1200, a flexible film 1400 including a data driver, a circuit board 1500, and a timing controller 1600. The flexible film 1400 may include a data driver 1300 for driving signal lines (e.g., scan lines 162 and 164). As shown, the flexible film 1400 may supply data signals to each of several segmented blocks of multiple signal lines included in the display panel 1100 and detect sensing signals from them, or it may correspond to all signal lines and function as a data driver. In some cases, the flexible film 1400 and the circuit board 1500 may be integrated.

[0066] The display panel 1100 may include an array substrate 1110 and a counter substrate 1120. The array substrate 1110 and the counter substrate 1120 may include glass or plastic substrates, and may further include thin-film transistor arrays, color filter arrays, or optical films on the substrates. For example, when the array substrate 1110 includes a plastic substrate, the plastic forming the substrate may be polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polycarbonate (PC). When the array substrate 1110 includes a plastic substrate, the light-emitting display device 1000 can be implemented as a flexible display device that can be bent or folded. The counter substrate 1120 may include any one of glass, plastic film, and encapsulation film. When the counter substrate 1120 is an encapsulation film, the encapsulation film may have a unit structure including alternating organic and inorganic films, and may be directly formed on the array substrate 1110 without a bonding process for bonding to the array substrate 1110.

[0067] The array substrate 1110 is a thin-film transistor substrate on which thin-film transistors are formed. Scan lines, signal lines, and sub-pixels SP are formed on one surface of the array substrate 1110 facing the opposing substrate 1120. Sub-pixels SP are provided in regions defined by the intersection structure of scan lines and signal lines. Scan lines are connected to scan drivers 1200, and signal lines are connected to data drivers 1300. Furthermore, as illustrated, scan drivers 1200 can be directly embedded in the non-display area NDA of the array substrate 1110, or can be connected to the non-display area NDA of the array substrate 1110 via a separate driver IC or printed circuit film.

[0068] like Figure 2 As shown, the display panel 1100 can be divided into a display area DA in which sub-pixels SP are formed to display images and a non-display area NDA in which no images are displayed. Scan lines, signal lines, and sub-pixels SP can be formed in the display area DA. The scan driver 1200, pads, and connecting lines between the signal lines and the pads can be formed in the non-display area NDA.

[0069] Each subpixel SP can be divided into a light-emitting portion EM that essentially emits light and a pixel circuit portion PC that includes wiring and transistors disposed outside the light-emitting portion.

[0070] Furthermore, the pixel circuit portion PC in the sub-pixel SP may include multiple transistors as switching elements, which are turned on by the scan signal of the scan line to receive the data voltage of the signal line, and each transistor may be a thin-film transistor. The transistors in the sub-pixel SP may have the same stacked structure in which they have active layers in the same layer, or they may have a heterogeneous stacked structure in which active layers are formed in different layers.

[0071] Figure 3This is a plan view showing the configuration of a thin-film transistor array in a portion of the light-emitting display device of this disclosure. Figure 4 It is shown Figure 3 A plan view of the anode in the image. Figure 5 It is a circuit diagram of a sub-pixel according to aspects of this disclosure. Figure 6 It is along Figure 4 The cross-sectional view taken by line I-I', and Figure 7 It is along Figure 4 The cross-sectional view taken from line II-II'.

[0072] Figure 3 This is a plan view showing the configuration of a thin-film transistor array including transistors and storage capacitors. Figure 4 The anodes 310R, 310G, and 310B of the light-emitting elements are shown. More specifically, red, green, and blue light-emitting elements OLED_B on a thin-film transistor array are shown.

[0073] like Figure 3 As shown, the thin-film transistor array includes parallel data lines DL, a first power line VSL through which a low-level VSS power supply voltage is transmitted, a second power line VDL through which a high-level VDD power supply voltage is transmitted, and a third power line RL through which a reference voltage, serving as an initialization voltage, is transmitted. The third power line RL for transmitting the reference voltage is connected to a grid pattern reference line RLm provided in a grid pattern in the display area DA of the substrate 100. This grid pattern reference line RLm intersects the third power line RL in the vertical direction, thus providing the same reference voltage as the third power line RL.

[0074] Furthermore, scan lines 162 and 164 and light emission control line EM can be positioned in the direction of intersection with the first power line VSL, the second power line VDL, the third power line RL, and the data line DL.

[0075] The first power line VSL, the second power line VDL, the third power line RL, the data line DL, the scan lines 162 and 164 in the cross direction, and the light emission control line EM can be connected as an example of a sub-pixel. Figure 5 The sub-pixel shown includes switching transistors T3 and T4, and a driving transistor DT.

[0076] The driving transistor DT is disposed on the light emission control line EM and the scan line 162 (with an active layer 141 interposed therebetween). In one exemplary aspect, the driving transistor DT includes a driving gate electrode DTG_R, DTG_G, or DTG_B.

[0077] like Figure 3As shown, sub-pixels formed in thin-film transistor array technology can have the same circuit structure, but the light-emitting elements can have different areas, such as... Figure 4 As shown. Therefore, the area of ​​each color can be adjusted differently depending on the visibility required by the display device. Figure 4 An example is shown where the blue anode 310B included in the blue light-emitting element has a larger area than the green anode 310G and the red anode 310R. The larger area of ​​the blue anode 310B can be configured to compensate for the low visibility of blue light emitted from the light-emitting area, but this disclosure is not limited thereto. Other techniques for increasing the visibility of blue light include placing more blue light-emitting elements in the circuit than light-emitting elements of other colors or controlling the light emission intensity.

[0078] In this respect, the blue anode 310B is configured to overlap with a portion of the gate electrode DTG_G 183 of the green driving transistor DTG, which is electrically connected to the green anode 310G. In this configuration, when the blue anode 310B is turned on, parasitic coupling may occur between the gate electrode DTG_G 183 of the green driving transistor DTG and the blue anode 310B. When the blue anode 310B is normally turned on, the parasitic capacitance causes a decrease in the brightness of the green light-emitting element. Furthermore, when the blue light-emitting element dims, a bright spot defect occurs, which is the phenomenon that the green driving gate electrode DTG_G overlapping with the dimmed blue anode is brighter than the green light-emitting element overlapping with another normal blue anode 310B. For example, a bright spot defect occurs when the gate electrode DTG_G based on the green light-emitting element overlaps with the normal blue anode 310B to form a parasitic capacitance. Parasitic capacitance can cause the dimmed blue light-emitting element to be brighter than the green light-emitting element.

[0079] In the light-emitting display device disclosed herein, such as Figure 6 As shown, a shielding metal 200 is provided between the gate electrode DTG_G183 of the green driving transistor DTG and the blue anode 310B to prevent parasitic coupling between them.

[0080] Furthermore, the shielding metal 200 is connected to the first power line VSL, which is a low-level power line passing through the display area, and a low-level constant voltage is applied to the shielding metal 200. Even when a turn-on voltage is applied to the blue anode 310B that overlaps with the shielding metal 200, the shielding metal 200 is unaffected by the turn-on voltage.

[0081] In the light-emitting display device according to aspects of this disclosure, the anodes 310R, 310G, and 310B of the light-emitting elements ED include reflective electrodes, and the overlap between the anodes on the lower thin-film transistor array does not affect the light-emitting characteristics. Therefore, the light-emitting region can have different areas for each color.

[0082] Although the illustrated example shows the blue anode 310B having a large area and overlapping with the green drive gate electrode DTG_G, aspects of this disclosure are not limited thereto. In some cases, the green or red anode may overlap with a drive transistor or switch transistor of another color, and a shielding metal may be formed between the two overlapping metals to prevent the influence of the overlapping metals.

[0083] For example, a green driving transistor DTG may include a gate electrode DTG_G, an active layer 142, a source electrode DTG_S, and a drain electrode DTG_D. The gate electrode DTG_G of the green driving transistor DTG may overlap with the blue anode 310B and the shielding metal 200 used to prevent electrical coupling between them.

[0084] The first power line VSL can be parallel to the data line DL and can overlap with the blue anode 310B.

[0085] In one aspect, shielding metal 200 may be disposed between the first planarization layer 190 and the second planarization layer 195, and the first planarization layer 190 and the second planarization layer 195 may be disposed between the green drive gate electrode DTG_G and the blue anode 310B.

[0086] In some cases, the shielding metal 200 may have an area equal to or greater than the overlapping area between the driving gate electrode DTG_G 183 of the green driving transistor DTG and the blue anode 310B, and prevent parasitic coupling from forming between the gate electrode DTG_G 183 of the green driving transistor DTG and the blue anode 310B.

[0087] In some embodiments, the shielding metal 200 may include, but is not limited to, the same material as the source electrode of the driving transistor included in the light-emitting display device (e.g., titanium (Ti) or aluminum (Al)). For example, the shielding metal may include molybdenum (Mo).

[0088] In one aspect, the shielding metal 200 comprises the same material as the source electrode, and the shielding metal 200 may be formed as a three-layer structure in which titanium, aluminum and titanium are stacked sequentially.

[0089] On the other hand, within the tolerance range, the thickness of the shielding metal 200 can be the same as the thickness of the source electrode.

[0090] It can provide, for example, when the light-emitting parts of the blue anode 310B, green anode 310G, and red anode 310R are exposed. Figure 6 The embankment 250 is illustrated. The embankment 250 can be formed to overlap with a light-emitting element (e.g., the edge of each of the anodes 310G, 310R, and 310B of the light-emitting element). Figure 6As illustrated, the organic layer 320 and cathode 330 can be disposed on the embankment 250. For example, the blue light-emitting element ED_B includes a blue anode 310B, an organic layer 320, and a cathode 330. The organic layer 320 and cathode 330 can be formed throughout the entire display area (see reference). Figure 1 On the DA), and the region of the light-emitting part EM is defined as the anodes 310R, 310G and 310B exposed through the embankment 250.

[0091] Anodes 310R, 310G, and 310B are on the same layer and include reflective electrodes to prevent the underlying wiring configuration from being visible.

[0092] The light-emitting display device disclosed herein includes a shielding material provided between an anode of one color (e.g., red, green, or blue) and a driving gate electrode of another color. For example, the shielding prevents the formation of parasitic capacitance when the anode and driving gate electrode overlap.

[0093] Figure 5 The circuit configuration of a sub-pixel SP of a display device according to aspects of this disclosure is shown.

[0094] Each sub-pixel SP may include first to fifth switching transistors T1 to T5, driving transistor DT, storage capacitor Cstg, and light-emitting element ED.

[0095] In this respect, the light-emitting element ED can be a self-emissive device capable of emitting light, such as an organic light-emitting diode, but is not limited thereto.

[0096] In the sub-pixel SP according to aspects of this disclosure, the first to fifth switching transistors T1 to T5 and the driving transistor DT can be P-type transistors. However, this disclosure is not limited thereto, and in some cases, at least one of the first to fifth switching transistors T1 to T5 and the driving transistor DT can be an N-type transistor.

[0097] On the other hand, the positions of the source and drain electrodes of the transistor, which will be described later, can be changed.

[0098] For certain configurations and with certain materials, P-type transistors can be more reliable than N-type transistors. In the case of a P-type transistor, since the source electrode is fixed to a high-level drive voltage VDD, the current flowing through the light-emitting element ED is not affected by the capacitor Cstg. Therefore, a stable current supply is easily achieved.

[0099] For example, a P-type transistor can be connected to the anode of a light-emitting element (ED). When transistors T4 and T5 connected to the ED operate in the saturation region, a constant current can flow regardless of changes in the current and threshold voltage of the ED, thus ensuring relatively high reliability.

[0100] In one respect, a transistor can be a silicon transistor formed using a semiconductor such as silicon (e.g., a transistor having a polysilicon channel formed using a low-temperature process such as cryogenic polysilicon or LTPS). However, transistors are not limited to this, and in some cases, transistors can be oxide transistors. Oxide transistors have relatively lower leakage current than silicon transistors, and when an oxide transistor is used to implement a transistor, current leakage from the gate electrode of the driving transistor DT can be prevented, and image quality degradation such as flicker can be reduced.

[0101] The gate electrode of the first switching transistor T1 can receive the first scan signal Scan1. The source electrode of the first switching transistor T1 can receive the data voltage Vdata. The drain electrode of the first switching transistor T1 can be connected to the storage capacitor Cstg.

[0102] The gate electrode of the second switching transistor T2 can receive the second scan signal Scan2. The second switching transistor T2 is turned on by the second scan signal Scan2 to control the operation of the driving transistor DT by the high-level driving voltage VDD stored in the storage capacitor Cstg.

[0103] The gate electrode of the third switching transistor T3 can receive the light emission signal from the light emission control line EM. The source electrode of the third switching transistor T3 can receive the reference voltage Vref.

[0104] The gate electrode of the fourth switching transistor T4 can receive a light emission signal from the light emission control line EM. The source electrode of the fourth switching transistor T4 can be connected to the drain electrode of the driving transistor DT. The drain electrode of the fourth switching transistor T4 can be connected to the anode of the light-emitting element ED. The fourth switching transistor T4 is turned on by the light emission signal from the light emission control line EM to supply drive current to the anode of the light-emitting element ED.

[0105] The gate electrode of the fifth switching transistor T5 can receive the second scan signal Scan2. The source electrode of the fifth switching transistor T5 can receive the reference voltage Vref through the reference third power supply line RL. The drain electrode of the fifth switching transistor T5 can be connected to the anode of the light-emitting element ED.

[0106] The gate electrode of the driving transistor DT can be connected to the storage capacitor Cstg, and its drain electrode can be connected to the source electrode of the second switching transistor T2. The source electrode of the driving transistor DT can receive a high-level driving voltage VDD.

[0107] The anode of the light-emitting element ED is connected to the drain electrode of the fifth switching transistor T5 and the drain electrode of the fourth switching transistor T4. A low-level drive voltage VSS can be supplied to the cathode of the light-emitting element ED.

[0108] In one aspect, a fourth switching transistor T4 is located between the anode of the light-emitting element ED and the driving transistor DT, and the fourth switching transistor T4 is controlled by a light-emitting signal from the light-emitting control line EM. The anode of the light-emitting element ED can be reset when a reference voltage Vref is supplied to the anode of the light-emitting element ED when the fourth switching transistor T4 is turned off.

[0109] exist Figure 5 The diagram illustrates a subpixel SP comprising six transistors DT, T1, T2, T3, T4, and T5, and a capacitor Cstg, as an example. However, this disclosure is not limited to this, and the structure and number of transistors and capacitors constituting the subpixel SP can be varied. Furthermore, in other respects, multiple subpixel SPs may have the same structure, or some of the multiple subpixel SPs may have different structures.

[0110] Reference Figure 6 and Figure 7 Describe in detail the layered structure of the blue luminescent part.

[0111] A buffer layer 110 is provided on the substrate 100.

[0112] Then, a lower light-blocking metal 120 is formed on at least a portion of the buffer layer 110 corresponding to the location where the active layer 142, which will serve as a channel, will be formed. For example... Figure 3 and Figure 4 As shown, the lower light-blocking metal 120 can be connected to the second voltage line VDL in a subsequent process and stabilized by being provided with a constant high-level voltage signal.

[0113] Then, an active buffer layer 130 is formed on the lower light-blocking metal 120.

[0114] Next, active layers 141, 142 and 143 are formed and then patterned to remain within a predetermined area.

[0115] Figure 3 and Figure 4 An example of using a conductive active layer for mesh pattern reference lines RLm and other connection patterns is shown.

[0116] A gate insulating layer 150 is formed on the active layers 141, 142 and 143, and then a first storage electrode 163, a first scan line (Scan1) 162, a second scan line (Scan2) 160 and 164 and light emission control lines (EM) 161 and 165 are formed.

[0117] Next, a first interlayer insulating layer 170 is formed covering the first scan line Scan1, the second scan line Scan2, and the light emission control line EM.

[0118] Next, a second storage electrode 167 is formed that overlaps with the first storage electrode 163. An upper metal 168 can also be formed in the same process.

[0119] Next, a second interlayer insulation layer 180 is formed.

[0120] Next, a green drive gate electrode 183 is formed to connect the conductive active layer 141 and the first storage electrode 163, and in the same process, a connection pattern 185 is formed to connect the second storage electrode 167.

[0121] Next, a first planarization layer 190 is formed covering the green drive gate electrode 183 and the connection pattern 185.

[0122] Next, a shielding metal 200 can be formed on the first planarization layer 190. The shielding metal 200 can contact the first power line VSL through contact holes in the first planarization layer 190.

[0123] A second planarization layer 195 is formed covering the shielding metal 200.

[0124] Furthermore, the blue anode 310B is formed to overlap with the shielding metal 200 in the portion where the green driving gate electrode 183 is located. Next, a embankment 250 is formed that covers the edge of the blue anode 310B and exposes the blue light-emitting portion BEM.

[0125] The blue light-emitting element ED_B is formed in the blue light-emitting portion BEM, including a blue anode 310B, an organic layer 320, and a cathode 330.

[0126] In some cases, the organic layer 320 may further include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The light-emitting layer can be selectively formed to correspond to the light-emitting portion BEM, and other layers can be formed throughout the entire display area DA.

[0127] In some aspects, an encapsulation structure 400 can be formed to cover the formation of a light-emitting element ED. The encapsulation structure 400 is obtained by alternately forming inorganic encapsulation films 410 and 430 and an organic encapsulation film 420. The inorganic encapsulation films 410 and 430 are formed to prevent moisture penetration, and the organic encapsulation film 420 is provided to prevent the flow of particles generated during the process and to prevent defects caused therefrom.

[0128] When the anode includes a reflective electrode, the shape of the anode is not affected by the shape of the underlying wiring or circuit structure. However, when the area of ​​the anode of a particular color is large and overlaps with the driving transistor used for the operation of another color, there is a risk of parasitic coupling occurring in the overlapping region.

[0129] The light-emitting display device according to this disclosure includes a shielding metal between an anode of a specific color and a driving gate electrode of another color. This shielding metal prevents the driving gate electrode of the other color from being affected by the conduction operation of the anode of the specific color. Furthermore, when a sub-pixel of the specific color operates as an abnormal sub-pixel due to a short circuit between the anode and cathode, the shielding metal prevents an increase in brightness in another sub-pixel that includes a driving gate electrode overlapping with the anode of the abnormal sub-pixel. If there is no shielding metal between the anode of the specific color and the driving gate electrode of the other color, the brightness in a sub-pixel of another color that includes a driving gate electrode overlapping with the anode of the abnormal sub-pixel of that specific color may be relatively increased compared to other sub-pixels emitting that other color (having a driving gate electrode overlapping with the anode of a normal sub-pixel), and bright spots may be observed.

[0130] A shielding metal can be formed to prevent electrical coupling caused by the overlap of adjacent driving transistors that emit light of the first color in a predetermined area and light-emitting elements of the second color.

[0131] The light-emitting display device according to aspects of this disclosure may include: a first driving transistor and a second driving transistor spaced apart from each other on a substrate, a first anode connected to the first driving transistor and overlapping the second driving transistor, a second anode having an area smaller than the first anode and connected to the second driving transistor, and a shielding metal between the second driving transistor and the first anode.

[0132] The second driving transistor may include a gate electrode, an active layer, a source electrode, and a drain electrode, and the gate electrode of the second driving transistor may overlap with the first anode and the shielding metal.

[0133] The shielding metal can be connected to the first power line.

[0134] The first power line can be parallel to the data line and overlap with the first anode.

[0135] The shielding metal can be placed between the first planarization layer and the second planarization layer, and the first planarization layer and the second planarization layer can be inserted between the gate electrode and the first anode.

[0136] The shielding metal can have an area larger than the overlapping area of ​​the first anode and the gate electrode.

[0137] The light-emitting display device according to aspects of this disclosure may further include a dam that exposes the light-emitting portions of the first anode and the second anode and overlaps with the edges of the first anode and the second anode. An organic layer and a cathode may be disposed on the first anode and the second anode of the light-emitting portion and on the dam.

[0138] The first anode and the second anode can be disposed on the same layer, and at least one of the first anode and the second anode can include a reflective electrode.

[0139] The first and second anodes can correspond to different colors of light-emitting parts.

[0140] A light-emitting display device according to another aspect of this disclosure may include: a first driving transistor and a second driving transistor spaced apart from each other on a substrate; a first anode connected to the first driving transistor and overlapping the second driving transistor, the first anode including a blue light-emitting portion; a second anode spaced apart from the first anode and connected to the second driving transistor, the second anode including a green light-emitting portion; and a shielding metal between the second driving transistor and the first anode.

[0141] The first anode can have a larger area than the second anode.

[0142] The second driving transistor may have a gate electrode, an active layer, a source electrode, and a drain electrode, and the gate electrode of the second driving transistor may overlap with the first anode and the shielding metal.

[0143] The shielding metal can be connected to the first power line.

[0144] The first power line can be parallel to the data line and overlap with the first anode.

[0145] The shielding metal can be placed between the first and second planarization layers, and the first and second planarization layers can be inserted between the gate electrode and the first anode.

[0146] The shielding metal can have an area larger than the overlapping area of ​​the first anode and the gate electrode.

[0147] The light-emitting display device may further include a dam that exposes the blue and green light-emitting portions and overlaps with the edges of the first and second anodes. An organic layer and a cathode may be disposed on the first anode, the second anode, and the dam.

[0148] The first anode and the second anode can be disposed on the same layer, and at least one of the first anode and the second anode can include a reflective electrode.

[0149] The present disclosure is not limited to the foregoing aspects and drawings, and those skilled in the art will understand that various substitutions, modifications and alterations may be made in the present disclosure without departing from the spirit or scope thereof.

[0150] The light-emitting display device disclosed herein has the following effects.

[0151] When the anode includes a reflective electrode, the shape of the anode is not affected by the shape of the underlying wiring or circuit structure. However, when the anode area for a particular color is large and therefore overlaps with a driving transistor used for the representation of another color, there is a risk of parasitic coupling occurring in the overlapping region.

[0152] The light-emitting display device disclosed herein solves this problem and provides a shielding metal between an anode of a specific color and a driving gate electrode of another color to prevent the driving gate electrode of the other color from being affected by the conduction operation of the anode of the specific color.

[0153] Additionally, when a sub-pixel of a specific color operates as an abnormal sub-pixel due to a short circuit between the anode and cathode, the shielding metal prevents an increase in brightness in another sub-pixel, including a drive gate electrode that overlaps with the anode of the abnormal sub-pixel.

[0154] In addition, a shielding metal can be formed to prevent electrical coupling caused by the overlap of adjacent driving transistors of the anode emitting light of the first color and the light-emitting element of the second color in the predetermined area.

[0155] Although aspects of this disclosure have been described with reference to the accompanying drawings, this disclosure is not limited to these aspects and can be implemented in various different forms. Those skilled in the art will understand that this disclosure can be implemented in specific forms other than those set forth herein without departing from the technical spirit and essential characteristics of this disclosure. Therefore, the disclosed aspects are to be interpreted in all respects as illustrative rather than restrictive.

[0156] Cross-references to related applications

[0157] This application claims the benefit of Korean Patent Application No. 10-2021-0194783, filed on December 31, 2021, which is incorporated herein by reference as if fully set forth herein.

Claims

1. A light-emitting display, the light-emitting display comprising: A first driving transistor at a first color sub-pixel on the substrate and a second driving transistor at a second color sub-pixel on the substrate, the first driving transistor and the second driving transistor being spaced apart from each other; A first anode, which is connected to the first driving transistor and overlaps with the second driving transistor; The second anode is connected to the second driving transistor and has an area smaller than that of the first anode; as well as The shielding metal between the second driving transistor and the first anode, The shielding metal is connected to the first power line that transmits the low-level VSS power supply voltage. Wherein, the shielding metal does not overlap with the second anode, and The first power line is parallel to the data line and overlaps with the first anode.

2. The light-emitting display according to claim 1, wherein, The second driving transistor includes a gate electrode, an active layer, a source electrode, and a drain electrode, and the gate electrode of the second driving transistor overlaps with the first anode and the shielding metal.

3. The light-emitting display according to claim 1, wherein, The shielding metal is located above the first power line.

4. The light-emitting display according to claim 2, wherein, The shielding metal is disposed between the first planarization layer and the second planarization layer, and the first planarization layer and the second planarization layer are interposed between the gate electrode and the first anode of the second driving transistor.

5. The light-emitting display according to claim 2, wherein, The shielding metal has an area larger than the overlapping area of ​​the gate electrode of the first anode and the second driving transistor.

6. The light-emitting display according to claim 1, further comprising: A dam portion that exposes the light-emitting portions of the first anode and the second anode and overlaps with the edges of the first anode and the second anode; as well as An organic layer and a cathode are disposed on the first anode and the second anode of the light-emitting portion and on the embankment.

7. The light-emitting display according to claim 1, wherein, The first anode and the second anode are formed on the same layer, and at least one of the first anode and the second anode includes a reflective electrode.

8. The light-emitting display according to claim 1, wherein, The second anode overlaps with the light-emitting portion of the second color sub-pixel, and The first anode overlaps with the light-emitting portion of the first color sub-pixel, extends to the second color sub-pixel, and is spaced apart from the second anode.

9. The light-emitting display according to claim 1, wherein, The low-level VSS power supply voltage is a constant voltage.

10. The light-emitting display according to claim 1, wherein, The first driving transistor and the second driving transistor are P-type transistors.

11. The light-emitting display according to claim 1, wherein, The first driving transistor and the second driving transistor are oxide transistors.

12. A light-emitting display, the light-emitting display comprising: A first driving transistor at a blue sub-pixel on the substrate and a second driving transistor at a green sub-pixel on the substrate, the first driving transistor and the second driving transistor being spaced apart from each other; A first anode is connected to the first driving transistor and overlaps with the blue light-emitting portion of the blue sub-pixel and at least a portion of the second driving transistor, wherein the first anode is not connected to the second driving transistor; A second anode, spaced apart from the first anode and connected to the second driving transistor, overlaps with the green light-emitting portion of the green sub-pixel; and A conductive material is disposed between the second driving transistor and the first anode. The conductive material is connected to the first power line that transmits the low-level VSS power supply voltage. Wherein, the conductive material is not located at the green light-emitting portion of the green sub-pixel, and The first power line is parallel to the data line and overlaps with the first anode.

13. The light-emitting display according to claim 12, wherein, The area of ​​the first anode is larger than the area of ​​the second anode.

14. The light-emitting display according to claim 12, wherein, The second driving transistor has a gate electrode, an active layer, a source electrode, and a drain electrode, and the gate electrode of the second driving transistor overlaps with the first anode and the conductive material.

15. The light-emitting display according to claim 12, wherein, The conductive material is located above the first power line.

16. The light-emitting display according to claim 14, wherein, The conductive material is disposed between the first planarization layer and the second planarization layer, and the first planarization layer and the second planarization layer are interposed between the gate electrode and the first anode of the second driving transistor.

17. The light-emitting display according to claim 14, wherein, The area of ​​the conductive material is greater than the overlap area between the first anode and the gate electrode of the second driving transistor.

18. The light-emitting display according to claim 12, further comprising: A dam that exposes the blue and green light-emitting portions and overlaps with the edges of the first and second anodes; as well as An organic layer and a cathode are disposed on the first anode, the second anode, and the embankment. The first anode and the second anode are formed on the same layer, and at least one of the first anode and the second anode includes a reflective electrode.

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