RF modules

Abstract

This application discloses a radio frequency (RF) module. The substrate includes a first layout region and a second layout region. A first RF chip is disposed in the first layout region and includes a first power amplifier and a second power amplifier. A first switch chip is disposed in the first layout region and is connected to the output terminals of both the first and second power amplifiers. A second RF chip is disposed in the second layout region and includes a third power amplifier. A second switch chip is disposed in the second layout region and is connected to the output terminal of the third power amplifier. By separating the components in two regions, the RF module shortens the RF signal transmission distance between the first RF chip and the first switch chip, as well as between the second RF chip and the second switch chip, thereby reducing insertion loss and interference of the RF signal and improving the output quality of the RF signal.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 2022117412249 entitled "Radio Frequency Module", filed on December 30, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency module. Background Technology

[0004] With the continuous development of radio frequency (RF) technology, RF chips are becoming increasingly integrated. When using RF chips, it is usually necessary to set up corresponding matching circuits on the substrate to process the RF signals output by the RF chip, and to set up corresponding switching chips on the substrate to control whether to output the processed RF signals.

[0005] However, when arranging the positions of RF chips and switching chips on the substrate, an unreasonable arrangement will not only increase the substrate area but also affect the output performance of RF signals. Summary of the Invention

[0006] This application provides an embodiment of a radio frequency module.

[0007] According to a first aspect of this application, embodiments of this application provide a radio frequency (RF) module, which includes a substrate, a first RF chip, a first switch chip, a second RF chip, and a second switch chip. The substrate includes a first layout region and a second layout region, located at different portions of the substrate. The first RF chip is disposed in the first layout region and includes a first power amplifier and a second power amplifier. The first power amplifier is configured to receive a first input signal, and the second power amplifier is configured to receive a second input signal, wherein the frequency of the first input signal is lower than the frequency of the second input signal. The first switch chip is disposed in the first layout region and is connected to the output terminals of both the first and second power amplifiers. The second RF chip is disposed in the second layout region and includes a third power amplifier, configured to receive a third input signal, wherein the frequency of the third input signal is higher than the frequency of the second input signal. The second switch chip is disposed in the second layout region and is connected to the output terminal of the third power amplifier.

[0008] According to a second aspect of this application, embodiments of this application also provide a radio frequency (RF) module, which includes a substrate, a first RF chip, a second RF chip, a first switch chip, and a second switch chip. The substrate has signal input ports and signal output ports. The signal input ports include a first signal input port, a second signal input port, and a third signal input port. The distance between the first signal input port and the second signal input port is less than the distance between the first signal input port and the third signal input port. The first signal input port is configured to input RF signals of a first frequency band, the second signal input port is configured to input RF signals of a second frequency band, and the third signal input port is configured to input RF signals of a third frequency band. The frequency of the first frequency band is less than the frequency of the second frequency band, and the frequency of the second frequency band is less than the frequency of the third frequency band. The signal output ports include a first signal output port, a second signal output port, and a third signal output port. The distance between the first signal output port and the second signal output port is less than the distance between the first signal output port and the third signal output port. The first RF chip is disposed on the substrate and connected to the first and second signal input ports. The second RF chip is disposed on the substrate and connected to the third signal input port. A first switch chip is disposed on the substrate and connected to a first radio frequency chip, a first signal output port, and a second signal output port. A second switch chip is disposed on the substrate and connected to a second radio frequency chip and a third signal output port.

[0009] According to a third aspect of this application, embodiments of this application also provide a radio frequency (RF) module, which includes a substrate, an RF chip, and a matching circuit. The substrate has a power supply port and a signal output port. The RF chip is disposed on the substrate and connected to the power supply port. The matching circuit is disposed on the substrate and connected between the RF chip and the signal output port, and the matching circuit includes a first capacitor and a first balun. One end of the first capacitor is connected to the power supply port, and the other end is grounded. The first balun is connected between the RF chip and the signal output port and surrounds the outer periphery of the first capacitor.

[0010] This application provides a radio frequency (RF) module, which includes a substrate, a first RF chip, a first switch chip, a second RF chip, and a second switch chip. The first RF chip and the first switch chip are disposed in a first layout area of ​​the substrate, while the second RF chip and the second switch chip are disposed in a second layout area of ​​the substrate. The first and second layout areas are located at different locations on the substrate. For example, the first RF chip and the first switch chip can be located in the lower region of the substrate, and the second RF chip and the second switch chip can be located in the upper region of the substrate. Therefore, the RF module of this application shortens the RF signal transmission distance between the first RF chip and the first switch chip, and between the second RF chip and the second switch chip, by separating the components in two regions. This reduces insertion loss and interference of the RF signal, resulting in better output quality when the RF signal is output from the RF module.

[0011] Furthermore, the first RF chip may include a first power amplifier and a second power amplifier, and the second RF chip may include a third power amplifier. The three power amplifiers can amplify the power of received RF signals of different frequencies, respectively. For example, the first power amplifier can amplify the power of low-frequency RF signals, the second power amplifier can amplify the power of intermediate-frequency RF signals, and the third power amplifier can amplify the power of high-frequency RF signals, making the application scenarios of this RF module more diverse.

[0012] This application also provides a radio frequency (RF) module, which includes a substrate, a first RF chip, a first switch chip, a second RF chip, and a second switch chip. In this embodiment, the distance between the first signal input port and the second signal input port is less than the distance between the first signal input port and the third signal input port. Therefore, when the first and second RF chips are disposed on the substrate, the first and second signal input ports can be closer to the first RF chip, and the third input port can be closer to the second RF chip. This allows for a more rational layout of the traces between the first signal input port and the first RF chip, the second signal input port and the first RF chip, and the third signal input port and the second RF chip.

[0013] Furthermore, since the distance between the first signal output port and the second signal output port is less than the distance between the first signal output port and the third signal output port, when the first switch chip and the second switch chip are disposed on the substrate, the first signal output port and the second signal output port can be closer to the first switch chip, and the third signal output port can be closer to the second switch chip. This allows for a more rational layout of the traces between the first signal output port and the first switch chip, the second signal output port and the first switch chip, and the third signal output port and the second switch chip.

[0014] This application also provides a radio frequency (RF) module, which includes a substrate, an RF chip, and a matching circuit. The substrate has a power supply port and a signal output port, and the matching circuit includes a first capacitor and a first balun. The RF chip, the first capacitor, and the first balun are all disposed on the substrate. The first balun connects the RF chip and the signal output port and surrounds the outer periphery of the first capacitor. Therefore, in this application, the first capacitor is located in the middle of the first balun, making the overall structure of the matching circuit more compact and saving substrate layout area.

[0015] Furthermore, in this application, the RF chip is connected to the power supply port, and one end of the first capacitor is also connected to the power supply port, while the other end is grounded. Therefore, when the power supply voltage is input to the RF chip from the power supply port, the first capacitor can play a decoupling role, thereby suppressing fluctuations in the power supply voltage and making the RF signal output by the RF chip more stable. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of the radio frequency module provided in the first embodiment of this application.

[0018] Figure 2 yes Figure 1 A cross-sectional view of the middle substrate.

[0019] Figure 3 yes Figure 1 The diagram shows another structural schematic of the radio frequency module.

[0020] Figure 4 yes Figure 3 A schematic diagram of the second matching circuit.

[0021] Figure 5yes Figure 1 The diagram shows another structural schematic of the radio frequency module.

[0022] Figure 6 This is a schematic diagram of the structure of the radio frequency module provided in the second embodiment of this application.

[0023] Figure 7 yes Figure 6 A schematic diagram of the structure of the radio frequency chip.

[0024] Figure 8 yes Figure 6 The diagram shows another structural schematic of the radio frequency module.

[0025] Figure 9 yes Figure 6 The diagram shows another structural schematic of the radio frequency module.

[0026] Figure 10 yes Figure 6 The diagram shows another structural schematic of the radio frequency module. Detailed Implementation

[0027] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0028] Please see Figure 1The first embodiment of this application provides a radio frequency (RF) module 100, which is a component that integrates two or more discrete devices such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into an independent module, thereby improving integration and hardware performance and miniaturizing the size. Specifically, the RF module 100 can be applied to 4G and 5G communication devices such as smartphones, tablets, and smartwatches. In this embodiment, the RF module 100 may include a substrate 10, a first RF chip 20, a first switch chip 30, a second RF chip 40, and a second switch chip 50. The substrate 10 includes a first layout region 120 and a second layout region 140, which are located at different parts of the substrate 10. The first RF chip 20 is disposed in the first layout region 120 and includes a first power amplifier 210 and a second power amplifier 230. The first power amplifier 210 is configured to receive a first input signal, and the second power amplifier 230 is configured to receive a second input signal. The frequency of the first input signal is lower than the frequency of the second input signal. A first switch chip 30 is disposed in the first layout region 120 and is connected to the output terminals of the first power amplifier 210 and the second power amplifier 230, respectively. A second radio frequency chip 40 is disposed in the second layout region 140 and includes a third power amplifier 410 configured to receive a third input signal, the frequency of which is higher than the frequency of the second input signal. A second switch chip 50 is disposed in the second layout region 140 and is connected to the output terminal of the third power amplifier 410.

[0029] In this embodiment, the first RF chip 20 and the first switch chip 30 are disposed in the first layout area 120 of the substrate 10, and the second RF chip 40 and the second switch chip 50 are disposed in the second layout area 140 of the substrate 10. The first layout area 120 and the second layout area 140 are located at different parts of the substrate 10. For example, the first RF chip 20 and the first switch chip 30 can be located in the lower region of the substrate 10, and the second RF chip 40 and the second switch chip 50 can be located in the upper region of the substrate 10. Therefore, the RF module 100 in this application shortens the RF signal transmission distance between the first RF chip 20 and the first switch chip 30 and the RF signal transmission distance between the second RF chip 40 and the second switch chip 50 by arranging the elements in two separate regions, thereby reducing the insertion loss and interference of the RF signal and resulting in better output quality when the RF signal is output from the RF module 100.

[0030] Furthermore, the first RF chip 20 may include a first power amplifier 210 and a second power amplifier 230, and the second RF chip 40 may include a third power amplifier 410. The three power amplifiers can amplify the power of received RF signals of different frequencies, respectively. For example, the first power amplifier 210 can amplify the power of low-frequency RF signals, the second power amplifier 230 can amplify the power of intermediate-frequency RF signals, and the third power amplifier 410 can amplify the power of high-frequency RF signals, making the application scenarios of the RF module 100 more diverse.

[0031] The following describes the various modules included in the radio frequency module 100 in the first embodiment.

[0032] The substrate 10 is generally rectangular and serves to fix and support the components (e.g., the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50) in the RF module 100. Specifically, the substrate 10 can be a copper-clad laminate. By performing hole processing, chemical copper plating, electroplating, etching, and other processes on the copper-clad laminate, circuits can be printed on the surface of the substrate 10.

[0033] In some possible embodiments, the substrate 10 may employ a double-layer metal structure. For details, please refer to... Figure 2 The substrate 10 may include a first metal layer 1100, a dielectric layer 1120, and a second metal layer 1140, wherein the first metal layer 1100, the dielectric layer 1120, and the second metal layer 1140 are stacked sequentially in the thickness direction of the substrate 10, that is, the first metal layer 1100 and the second metal layer 1140 are spaced apart on opposite sides of the dielectric layer 1120. Specifically, the first metal layer 1100 can be used for laying out traces (e.g., equivalent traces for inductors and baluns) and fixing and supporting components in the RF module 100 (e.g., the first RF chip 20, the first switch chip 30, etc.). The second metal layer 1140 can be used for laying out traces. Exemplarily, the second metal layer 1140 can be used to set signal ports (e.g., signal input ports, signal output ports, etc.) and grounding metal plates. Specifically, the traces located in the first metal layer 1100 and the traces located in the second metal layer 1140 can be connected by conductive vias provided in the dielectric layer 1120, thereby avoiding unnecessary jumpers and allowing for more flexible layout of components in the RF module 100.

[0034] In this embodiment, the substrate 10 includes a first layout region 120 and a second layout region 140, which are located at different portions of the substrate 10. The first layout region 120 and the second layout region 140 can be arranged side-by-side on the substrate 10. For example, in... Figure 1In this configuration, the first layout region 120 and the second layout region 140 are arranged side by side on the first direction L of the substrate 10. The first layout region 120 may be located approximately below the substrate 10, and the second layout region 140 may be located approximately above the substrate 10. Specifically, the first direction L may be the length direction of the substrate 10.

[0035] In other possible embodiments, the first layout region 120 and the second layout region 140 may be arranged side by side on a second direction W of the substrate 10, where the second direction W intersects the first direction L. For example, the first layout region 120 may be located approximately on the left side of the substrate 10, and the second layout region 140 may be located approximately on the right side of the substrate 10. Specifically, the second direction W may be the width direction of the substrate 10, and the second direction W is perpendicular to the first direction L.

[0036] In this embodiment, the first layout region 120 and the second layout region 140 can be two adjacent regions, allowing the components laid out on the substrate 10 to be more compact. For example, in Figure 1 In this embodiment, the first layout region 120 and the second layout region 140 are adjacent to each other. In some other possible embodiments, the first layout region 120 and the second layout region 140 may also be two non-adjacent regions. Exemplarily, the substrate 10 may further include a third layout region (not shown in the figure), which is disposed between the first layout region 120 and the second layout region 140. For example, the first layout region 120, the third layout region, and the second layout region 140 may be arranged side by side in the first direction L. Specifically, this embodiment does not specifically limit the specific division of the layout regions on the substrate 10.

[0037] In this embodiment, multiple chips or circuits located in the same layout area are used to transmit at least one set of radio frequency (RF) signals, while multiple chips or circuits located in different layout areas transmit different RF signals. For example, the first RF chip 20 and the first switch chip 30, located in the first layout area 120, can be used to transmit low-to-medium frequency signals, while the second RF chip 40 and the second switch chip 50, located in the second layout area 140, can be used to transmit high-frequency signals. Therefore, the RF module 100 in this embodiment shortens the RF signal transmission distance between the first RF chip 20 and the first switch chip 30, and between the second RF chip 40 and the second switch chip 50, by separating the components in two areas. This reduces insertion loss and interference of the RF signals, resulting in better output quality when the RF signals are output from the RF module 100.

[0038] In this embodiment, the substrate 10 may further be provided with a first signal input port 101, a second signal input port 102, and a third signal input port 103. The first signal input port 101, the second signal input port 102, and the third signal input port 103 are located at the edge of the substrate 10 and are used to receive radio frequency signals from the externally input radio frequency module 100, respectively. Figure 1 In the first layout area 120, the first signal input port 101 and the second signal input port 102 are located, and the third signal input port 103 is located in the second layout area 140. The first signal input port 101, the second signal input port 102, and the third signal input port 103 are generally located on the side of the first RF chip 20 away from the first switch chip 30, that is, Figure 1 The signal input ports 101, 102, and 103 are sequentially spaced along the left edge of the substrate 10 in a first direction L. The first direction L can be the length direction of the substrate 10. In some possible embodiments, the substrate 10 employs a double-layer metal structure, in which case the first signal input port 101, the second signal input port 102, and the third signal input port 103 can be disposed on the second metal layer 1140 of the substrate 10, thereby providing more layout space for the first metal layer 1100.

[0039] Specifically, the first signal input port 101 can be used to receive a first input signal, the second signal input port 102 can be used to receive a second input signal, and the third signal input port 103 can be used to receive a third input signal. The frequency of the first input signal is lower than the frequency of the second input signal, and the frequency of the third input signal is higher than the frequency of the second input signal. For example, the first input signal can be a low-frequency (e.g., less than 300kHz) radio frequency signal, the second input signal can be a medium-frequency (e.g., greater than 3MHz and less than 30MHz) radio frequency signal, and the third input signal can be a high-frequency (e.g., greater than 300MHz) radio frequency signal. Therefore, the radio frequency module 100 in this embodiment can process multiple radio frequency signals of different frequencies, making the application scenarios of the radio frequency module 100 more diverse.

[0040] In this embodiment, the substrate 10 may also be provided with a first signal output port 104, a second signal output port 105, and a third signal output port 106. The first signal output port 104, the second signal output port 105, and the third signal output port 106 are disposed at the edge of the substrate 10 and are used to output radio frequency signals of different frequencies respectively.

[0041] Specifically, there can be multiple first signal output ports 104. For example, in some possible embodiments, there are five first signal output ports 104, which are disposed in the first layout area 120 and spaced apart sequentially in the second direction W. The second direction W can be the width direction of the substrate 10, and the first direction L and the second direction W intersect and are approximately perpendicular. Figure 1 In this configuration, multiple first signal output ports 104 are generally located on the side of the first RF chip 20 away from the second RF chip 40, that is, Figure 1 The lower edge of the middle substrate 10 can be used to output low-frequency signals processed by the radio frequency module 100.

[0042] The number of second signal output ports 105 can be multiple. For example, in some possible embodiments, the number of second signal output ports 105 is 5. Multiple second signal output ports 105 are disposed in the first layout area 120 and are sequentially spaced apart in the first direction L. Figure 1 In the middle, multiple second signal output ports 105 are generally located on the side of the first switching chip 30 away from the first radio frequency chip 20, that is, Figure 1 The lower right edge of the intermediate substrate 10 can be used to output the intermediate frequency signal processed by the radio frequency module 100.

[0043] The number of third signal output ports 106 can be multiple. For example, in some possible embodiments, the number of third signal output ports 106 is six, and multiple third signal output ports 106 are disposed in the second layout area 140 and are arranged sequentially at intervals in the first direction L. Figure 1 In the middle, multiple third signal output ports 106 are generally located on the side of the second switch chip 50 away from the second radio frequency chip 40, that is, Figure 1 The upper right edge of the middle substrate 10 can be used to output high-frequency signals processed by the radio frequency module 100.

[0044] In some possible embodiments, the substrate 10 adopts a double metal layer structure, and a plurality of first signal output ports 104, a plurality of second signal output ports 105 and a plurality of third signal output ports 106 can be disposed on the second metal layer 1140 of the substrate 10, so that the first metal layer 1100 has more layout space.

[0045] In this embodiment, the substrate 10 may also be provided with multiple control ports for inputting control signals sent from the outside. The multiple control ports may be located at the edge of the substrate 10 to facilitate the input of control signals. For example, the multiple control ports may be located approximately at the left edge of the substrate 10, and sequentially spaced from the first signal input port 101, the second signal input port 102, and the third signal input port 103 in the first direction L. Exemplarily, the multiple control ports may include a control port SDATA, a control port SCLK, and a control port VIO. The control port SDATA is used to receive control commands, the control port SCLK is used to receive control clock signals, and the control port VIO is used to receive power from the digital input / output interface.

[0046] In this embodiment, the substrate 10 is provided with a first power supply port 107, a second power supply port 108, and a third power supply port 109. These ports are used to connect to an external power source, which supplies power to the components on the substrate 10 through these ports. The external power source can provide a voltage (VCC), such as 3.3V, 5V, 12V, etc., and this embodiment does not specify a particular voltage. In some possible embodiments, the substrate 10 adopts a double-layer metal structure. In this case, multiple control ports and the first, second, and third power supply ports 107, 108, and 109 can be disposed on the second metal layer 1140 of the substrate 10, allowing the first metal layer 1100 more space for layout.

[0047] The first radio frequency chip 20 is disposed on the substrate 10 and located in the first layout area 120 of the substrate 10, and is used to amplify the power of the input radio frequency signal. Specifically, the first radio frequency chip 20 can be attached to the substrate 10, inserted into the substrate 10, or soldered onto the substrate 10 by means of soldering (e.g., tin soldering).

[0048] In this embodiment, the first radio frequency chip 20 may include a first power amplifier 210 and a second power amplifier 230. The input terminal of the first power amplifier 210 is connected to the first signal input port 101, that is, the first power amplifier 210 is configured to receive a first input signal input from the first signal input port 101. The input terminal of the second power amplifier 230 is connected to the second signal input port 102, that is, the second power amplifier 230 is configured to receive a second input signal.

[0049] Specifically, the first power amplifier 210 and the second power amplifier 230 can be either single-ended amplifier circuits or differential amplifier circuits. In some possible embodiments, the first power amplifier 210 is a single-ended amplifier circuit, and the second power amplifier 230 is a differential amplifier circuit. Since the first input signal received by the first power amplifier 210 is a low-frequency signal, the amplification of the low-frequency signal can be achieved by using a single-ended amplifier circuit structure, thereby saving the hardware cost of the first power amplifier 210.

[0050] In this embodiment, both the first power amplifier 210 and the second power amplifier 230 are two-stage amplifier circuits. The first power amplifier 210 may include a first power supply terminal 212 and a second power supply terminal 214, and the second power amplifier 230 may include a third power supply terminal 232 and a fourth power supply terminal 234. The first power supply terminal 212 and the third power supply terminal 232 are connected to the first power supply port 107, and the second power supply terminal 214 and the fourth power supply terminal 234 are connected to the second power supply port 108. Therefore, in this embodiment, the first power supply port 107 and the second power supply port 108 respectively supply power to the first power supply terminal 212 and the second power supply terminal 214 in the first power amplifier 210, thereby satisfying the different supply voltages required by the first power supply terminal 212 and the second power supply terminal 214, enabling the first power amplifier 210 to operate more stably. In addition, the first power supply port 107 and the second power supply port 108 also supply power to the third power supply terminal 232 and the fourth power supply terminal 234 of the second power amplifier 230, respectively, thereby meeting the different power supply voltages required by the third power supply terminal 232 and the fourth power supply terminal 234, so that the second power amplifier 230 can work more stably.

[0051] The first switch chip 30 is disposed on the substrate 10 and located in the first layout area 120. The first switch chip 30 is connected to the output terminal of the first power amplifier 210 and the output terminal of the second power amplifier 230, respectively, and is used to control the output state of the radio frequency signal amplified by the first power amplifier 210 and the second power amplifier 230. Specifically, the first switch chip 30 can be mounted on the substrate 10, inserted into the substrate 10, or soldered onto the substrate 10 by means of soldering (e.g., tin soldering).

[0052] In this embodiment, the first switch chip 30 may include a first switch unit 320 and a second switch unit 340. The first switch unit 320 is connected to the output terminal of the first power amplifier 210 and is used to control the output state of the radio frequency signal processed by the first power amplifier 210. For example, when the first switch unit 320 is in the on state, the radio frequency signal processed by the first power amplifier 210 can be output smoothly from the radio frequency module 100; conversely, when the first switch unit 320 is in the off state, the radio frequency signal processed by the first power amplifier 210 cannot be output from the radio frequency module 100. The second switch unit 340 is connected to the output terminal of the second power amplifier 230 and is used to control the output state of the radio frequency signal processed by the second power amplifier 230. The specific working process of the second switch unit 340 can be referred to the relevant description of the first switch unit 320, and will not be repeated here.

[0053] Specifically, the first switching unit 320 is connected to the first signal output port 104. The distance between the first signal output port 104 and the first switching unit 320 is less than the distance between the first signal output port 104 and the second switching unit 340, thereby shortening the signal transmission distance between the first signal output port 104 and the first switching unit 320 and reducing the signal insertion loss of the radio frequency signal output from the first switching unit 320. Similarly, the second switching unit 340 is connected to the second signal output port 105. The distance between the second signal output port 105 and the second switching unit 340 is less than the distance between the second signal output port 105 and the first switching unit 320, thereby shortening the signal transmission distance between the second signal output port 105 and the second switching unit 340 and reducing the signal insertion loss of the radio frequency signal output from the second switching unit 340.

[0054] In this embodiment, the first radio frequency chip 20 and the first switch chip 30 are arranged spaced apart approximately in the second direction W. The first signal input port 101 and the second signal input port 102 are located on the side of the first radio frequency chip 20 away from the first switch chip 30. The first signal output port 104 is located on the side of the first switch unit 320 away from the first radio frequency chip 20 in the first direction L. The second signal output port 105 is located on the side of the second switch unit 340 away from the first radio frequency chip 20 in the second direction W. Specifically, the first signal input port 101, the first radio frequency chip 20, and the first switch chip 30 are arranged sequentially approximately in the second direction W; the second signal input port 102, the first radio frequency chip 20, and the first switch chip 30 are arranged sequentially in the second direction W; the first signal output port 104, the first switch chip 30, and the first radio frequency chip 20 are arranged sequentially approximately in the first direction L; and the second signal output port 105, the first switch chip 30, and the first radio frequency chip 20 are arranged sequentially approximately in the second direction W. By adopting the above-described layout, the RF module 100 can shorten the signal transmission path between the first signal input port 101, the first power amplifier 210, the first switch unit 320, and the first signal output port 104, as well as shorten the signal transmission path between the second signal input port 102, the second power amplifier 230, the second switch unit 340, and the second signal output port 105, thereby reducing signal insertion loss and making the arrangement of the first signal input port 101, the second signal input port 102, the first RF chip 20, the first switch chip 30, the first signal output port 104, and the second signal output port 105 more compact and reasonable.

[0055] The second radio frequency chip 40 is disposed on the substrate 10 and located in the second layout area 140 of the substrate 10, and is used to amplify the power of the input radio frequency signal. Specifically, the second radio frequency chip 40 can be mounted on the substrate 10, inserted into the substrate 10, or soldered onto the substrate 10 by means of soldering (e.g., tin soldering).

[0056] The second radio frequency chip 40 in this embodiment may include a third power amplifier 410. The input terminal of the third power amplifier 410 is connected to the third signal input port 103. That is, the third power amplifier 410 is configured to receive a third input signal input from the third signal input port 103.

[0057] Specifically, in Figure 1In this design, the distance between the first signal input port 101 and the second signal input port 102 is less than the distance between the second signal input port 102 and the third signal input port 103. Therefore, when the first RF chip 20 and the second RF chip 40 are disposed on the substrate 10, the first signal input port 101 and the second signal input port 102 can be closer to the first RF chip 20, and the third input port 103 can be closer to the second RF chip 40. This makes the routing of the traces between the first signal input port 101 and the first RF chip 20, the traces between the second signal input port 102 and the first RF chip 20, and the traces between the third signal input port 103 and the second RF chip 40 more reasonable. It should be noted that the "distance between the first signal input port 101 and the second signal input port 102" can be understood as the straight-line distance between the geometric center of the first signal input port 101 and the geometric center of the second signal input port 102. For example, when the first signal input port 101 is rectangular, its geometric center can be the center of the rectangle; when the first signal input port 101 is circular, its geometric center can be the center of the circle.

[0058] In this embodiment, the third power amplifier 410 is a two-stage amplifier circuit, including a fifth power supply terminal 412 and a sixth power supply terminal 414. The substrate 10 also has a third power supply port 109, which is connected to the fifth power supply terminal 412 and the sixth power supply terminal 414. Therefore, in this embodiment, the third power supply port 109 is used to power the second RF chip 40, while the first power supply port 107 and the second power supply port 108 are used to power the first RF chip 20, thereby achieving power supply separation. That is, the first RF chip 20 and the second RF chip 40 can work independently. If at least one of the first power supply ports 107 and 108 fails, it will not affect the normal operation of the second RF chip 40; if the third power supply port 109 fails, it will not affect the normal operation of the first RF chip 20.

[0059] The second switch chip 50 is disposed on the substrate 10 and located in the second layout area 140. The second switch chip 50 is connected to the output terminal of the third power amplifier 410 and is used to control the output state of the radio frequency signal amplified by the third power amplifier 410. For example, when the second switch chip 50 is in the on state, the radio frequency signal processed by the third power amplifier 410 can be output smoothly from the radio frequency module 100; conversely, when the second switch chip 50 is in the off state, the radio frequency signal processed by the third power amplifier 410 cannot be output from the radio frequency module 100. Specifically, the second switch chip 50 can be mounted on the substrate 10, inserted into the substrate 10, or soldered onto the substrate 10 by means of soldering (e.g., soldering).

[0060] Specifically, the second switch chip 50 is connected to the third signal output port 106, and the distance between the first signal output port 104 and the second signal output port 105 is less than the distance between the first signal output port 104 and the third signal output port 106. Therefore, when the first switch chip 30 and the second switch chip 50 are disposed on the substrate 10, the first signal output port 104 and the second signal output port 105 can be closer to the first switch chip 30, and the third signal output port 106 can be closer to the second switch chip 50. This makes the layout of the traces between the first signal output port 104 and the first switch chip 30, the second signal output port 105 and the first switch chip 30, and the third signal output port 106 and the second switch chip 50 more reasonable. It should be noted here that the "distance between the first signal output port 104 and the second signal output port 105" can be understood as the straight-line distance between the geometric center of the first signal output port 104 and the geometric center of the second signal output port 105. For example, when the first signal output port 104 is rectangular, its geometric center can be the center of the rectangle; when the first signal output port 104 is circular, its geometric center can be the center of the circle.

[0061] In this embodiment, the first RF chip 20 and the second RF chip 40 are arranged spaced apart approximately in the first direction L. The second RF chip 40 and the second switch chip 50 are arranged spaced apart approximately in the second direction W. The third signal input port 103 is located on the side of the second RF chip 40 away from the second switch chip 50, and the third signal output port 106 is located on the side of the second switch chip 50 away from the second RF chip 40. Specifically, the third signal input port 103, the second RF chip 40, and the second switch chip 50 are arranged sequentially approximately in the second direction W, and the third signal output port 106, the second switch chip 50, and the second RF chip 40 are arranged sequentially approximately in the second direction W. Through the above-described layout, the RF module 100 can shorten the signal transmission path between the third signal input port 103, the third power amplifier 410, the second switch chip 50, and the third signal output port 106, thereby reducing signal insertion loss and making the arrangement of the third signal input port 103, the second RF chip 40, the second switch chip 50, and the third signal output port 106 more compact and reasonable.

[0062] Please see Figure 3The RF module 100 may further include a first matching circuit 60 and a second matching circuit 70, which are disposed on the substrate 10 and located in the first layout region 120 of the substrate 10. The first matching circuit 60 is connected between the first power amplifier 210 and the first switching chip 30, and is used to process the RF signal output by the first power amplifier 210 and send the processed RF signal to the first switching chip 30. Specifically, the first matching circuit 60 is connected between the first power amplifier 210 and the first switching unit 320, and is used to perform impedance conversion on the low-frequency RF signal output by the first power amplifier 210 to achieve impedance matching, thereby improving the impedance matching performance of the first RF chip 20.

[0063] In one implementation, the first matching circuit 60 may include circuit elements such as an inductor 610 and a capacitor (not shown in the figure). These circuit elements may be discrete devices mounted on the substrate 10 to form the first matching circuit 60. In some possible embodiments, the capacitor in the first matching circuit 60 may be a surface-mount device (SMD), which can be directly mounted on the substrate 10. The inductor 610 in the first matching circuit 60 may be wound around the substrate 10 as a trace. For example, if the substrate 10 has a double-layer metal structure, the inductor 610 may be wound around the first metal layer 1100. This embodiment does not specifically limit the specific implementation of the first matching circuit 60.

[0064] The second matching circuit 70 is connected between the second power amplifier 230 and the first switching chip 30. It processes the radio frequency signal output by the second power amplifier 230 and sends the processed radio frequency signal to the first switching chip 30. Specifically, the second matching circuit 70 is connected between the second power amplifier 230 and the second switching unit 340. It performs impedance conversion on the mid-frequency radio frequency signal output by the second power amplifier 230 to achieve impedance matching, thereby improving the impedance matching performance of the first radio frequency chip 20.

[0065] exist Figure 3 In the illustrated embodiment, the first matching circuit 60 is located on the side of the first RF chip 20 away from the second RF chip 40, and is spaced apart from the first switch chip 30 in the second direction W. The second matching circuit 70 is located on the side of the first RF chip 20 facing the first switch chip 30, and is also spaced apart from the first RF chip 20 in the second direction W. Through this layout, the RF module 100 can achieve a more compact arrangement of the first RF chip 20, the first matching circuit 60, the second matching circuit 70, and the first switch chip 30, thereby saving the layout area of ​​the substrate 10 and shortening the transmission path of the RF signal.

[0066] In one implementation, the second matching circuit 70 may include circuit elements such as a balun 710 and a capacitor 720. These circuit elements may be disposed on the substrate 10 as discrete devices to form the second matching circuit 70. In some possible embodiments, the capacitor 720 in the second matching circuit 70 may be a surface-mount device (SMD), in which case the capacitor 720 may be directly mounted on the substrate 10. The balun 710 in the second matching circuit 70 may be wound around the substrate 10 in the form of a trace. For example, if the substrate 10 has a double-layer metal structure, the balun 710 may be wound around the first metal layer 1100.

[0067] Specifically, please refer to Figure 4 One end of capacitor 720 is connected to the first power supply port 107, and the other end is grounded. Balun 710 is connected between the second power amplifier 230 and the first switching chip 30, and surrounds the outer periphery of capacitor 720. In this embodiment, by placing capacitor 720 in the middle of balun 710, the overall structure of the second matching circuit 70 is more compact, saving the layout area of ​​substrate 10. Furthermore, in this embodiment, the second power amplifier 230 is connected to the first power supply port 107, and one end of capacitor 720 is also connected to the first power supply port 107, with the other end grounded. Therefore, when the power supply voltage is input from the first power supply port 107 to the second power amplifier 230, capacitor 720 can play a decoupling role, thereby suppressing the fluctuation of the power supply voltage and making the RF signal output by the second power amplifier 230 more stable.

[0068] In this embodiment, the second power amplifier 230 is a differential amplifier circuit, that is, the second power amplifier 230 has a first signal output terminal 231 and a second signal output terminal 232, which are used to output a pair of differential signals. Specifically, the balun 710 may include a primary side routing portion 7100 and a secondary side routing portion 7120. The primary side routing portion 7100 surrounds the outer periphery of the capacitor 720 and is connected between the first signal output terminal 231 and the second signal output terminal 232. At least a portion of the secondary side routing portion 7120 surrounds the outer periphery of the primary side routing portion 7100, and one end of the secondary side routing portion 7120 is grounded, and the other end is connected to the first switching chip 30. Therefore, in this embodiment, the balun 710 converts the pair of differential signals output by the second power amplifier 230 into a radio frequency signal and outputs it to the first switching chip 30. It should be noted that "at least a portion of the secondary routing portion 7120 surrounds the outer periphery of the primary routing portion 7100" can mean that all the secondary routing portions 7120 surround the outer periphery of the primary routing portion 7100; or it can mean that a portion of the secondary routing portions 7120 surrounds the outer periphery of the primary routing portion 7100, and another portion of the secondary routing portions 7120 surrounds the inner periphery of the primary routing portion 7100. In this embodiment, the specific winding method of the secondary routing portions 7120 is not specifically limited.

[0069] In one implementation, the secondary side routing portion 7120 may include a first secondary side routing line 7121 and a second secondary side routing line 7126. The first secondary side routing line 7121 surrounds the outer periphery of the capacitor 720 and is located within the surrounding area defined by the primary side routing portion 7100; that is, the first secondary side routing line 7121 surrounds the inner periphery of the primary side routing portion 7100, and the second secondary side routing line 7126 surrounds the outer periphery of the primary side routing portion 7100. Specifically, the first end 7122 of the first secondary side routing line 7121 is grounded, and the second end 7123 of the first secondary side routing line 7121 is electrically connected to the first end 7127 of the second secondary side routing line 7126. The second end 7128 of the second secondary side routing line 7126 is connected to the first switching chip 30. Therefore, the secondary side routing section 7120 in this embodiment may include a first secondary side routing line 7121 wound around the inner periphery of the primary side routing section 7100 and a second secondary side routing line 7126 wound around the outer periphery of the primary side routing section 7100, thereby extending the overall length of the secondary side routing section 7120, that is, increasing the overall coupling length of the primary and secondary sides of the balun 710 and optimizing the output performance of the balun 710.

[0070] Please see Figure 5The RF module 100 may further include a control chip 80, which is disposed on the substrate 10. Specifically, the control chip 80 may be mounted on the substrate 10, inserted into the substrate 10, or soldered onto the substrate 10 by means of soldering (e.g., tin soldering). In this embodiment, the control chip 80 is respectively connected to the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50, and is used to control the operating state of the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50. Specifically, the control chip 80 may be connected to multiple control ports on the substrate 10, and receive control commands sent from the outside through the multiple control ports, and control the operating state of the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 based on the control commands.

[0071] In this embodiment, the control chip 80 is located between the first RF chip 20 and the second RF chip 40. Specifically, the second RF chip 40, the control chip 80, and the first RF chip 20 are arranged sequentially and spaced apart along a first direction L, making their distribution more compact and reasonable. Furthermore, the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 are respectively disposed on the outer periphery of the control chip 80, allowing for more efficient routing of traces when the control chip 80 connects to the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50, thus avoiding excessive jumpers.

[0072] The RF module 100 may further include a third matching circuit 85, which is disposed on the substrate 10 and located in the second layout region 140 of the substrate 10. The third matching circuit 85 is located between the second RF chip 40 and the second switch chip 50, and is connected to the third power amplifier 410 and the second switch chip 50, respectively. That is, the second RF chip 40, the third matching circuit 85, and the second switch chip 50 are arranged approximately at intervals in the second direction W, allowing for a more compact layout, thereby saving layout area on the substrate 10 and shortening the RF signal transmission path. Specifically, the third matching circuit 85 processes the high-frequency RF signal output from the third power amplifier 410 and sends the processed RF signal to the second switch chip 50. Since the third matching circuit 85 can perform impedance conversion on the high-frequency RF signal output from the third power amplifier 410 to achieve impedance matching, the impedance matching performance of the second RF chip 40 is improved.

[0073] In one implementation, the third matching circuit 85 may include circuit elements such as a balun and a capacitor (not shown in the figure). These circuit elements can be discretely mounted on the substrate 10 to form the third matching circuit 85. In some possible embodiments, the capacitor in the third matching circuit 85 may be a surface-mount device (SMD), which can be directly mounted on the substrate 10. The balun in the third matching circuit 85 can be wound around the substrate 10 as a trace. For example, if the substrate 10 has a double-layer metal structure, the balun is wound around the first metal layer 1100. Specifically, the implementation of the third matching circuit 85 can refer to the circuit structure of the second matching circuit 70, and will not be repeated here.

[0074] The first embodiment of this application provides a radio frequency (RF) module 100, which may include a substrate 10, a first RF chip 20, a first switch chip 30, a second RF chip 40, and a second switch chip 50. The substrate 10 includes a first layout region 120 and a second layout region 140, which are located at different locations on the substrate 10. The first RF chip 20 is disposed in the first layout region 120 and includes a first power amplifier 210 and a second power amplifier 230. The first power amplifier 210 is configured to receive a first input signal, and the second power amplifier 230 is configured to receive a second input signal, the frequency of which is lower than the frequency of the second input signal. The first switch chip 30 is disposed in the first layout region 120 and is connected to the output terminals of the first power amplifier 210 and the second power amplifier 230, respectively. The second RF chip 40 is disposed in the second layout region 140 and includes a third power amplifier 410, which is configured to receive a third input signal, the frequency of which is higher than the frequency of the second input signal. The second switch chip 50 is disposed in the second layout area 140 and connected to the output terminal of the third power amplifier 410.

[0075] In this embodiment, the first RF chip 20 and the first switch chip 30 are disposed in the first layout area 120 of the substrate 10, and the second RF chip 40 and the second switch chip 50 are disposed in the second layout area 140 of the substrate 10. The first layout area 120 and the second layout area 140 are located at different parts of the substrate 10. For example, the first RF chip 20 and the first switch chip 30 can be located in the lower region of the substrate 10, and the second RF chip 40 and the second switch chip 50 can be located in the upper region of the substrate 10. Therefore, the RF module 100 in this application shortens the RF signal transmission distance between the first RF chip 20 and the first switch chip 30 and the RF signal transmission distance between the second RF chip 40 and the second switch chip 50 by arranging the elements in two separate regions, thereby reducing the insertion loss and interference of the RF signal and resulting in better output quality when the RF signal is output from the RF module 100.

[0076] Furthermore, the first RF chip 20 may include a first power amplifier 210 and a second power amplifier 230, and the second RF chip 40 may include a third power amplifier 410. The three power amplifiers can amplify the power of received RF signals of different frequencies, respectively. For example, the first power amplifier 210 can amplify the power of low-frequency RF signals, the second power amplifier 230 can amplify the power of intermediate-frequency RF signals, and the third power amplifier 410 can amplify the power of high-frequency RF signals, making the application scenarios of the RF module 100 more diverse.

[0077] Please refer to it again. Figure 1 The second embodiment of this application provides a radio frequency (RF) module 100, which is a component that integrates two or more discrete devices such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into a single independent module, thereby improving integration and hardware performance and miniaturizing the size. Specifically, the RF module 100 can be applied to 4G and 5G communication devices such as smartphones, tablets, and smartwatches. In this embodiment, the RF module 100 may include a substrate 10, a first RF chip 20, a first switch chip 30, a second RF chip 40, and a second switch chip 50.

[0078] In this embodiment, the substrate 10 is provided with signal input ports and signal output ports. Specifically, the signal input ports may include a first signal input port 101, a second signal input port 102, and a third signal input port 103. The distance between the first signal input port 101 and the second signal input port 102 is less than the distance between the first signal input port 101 and the third signal input port 103. Specifically, the first signal input port 101 is configured to input a first frequency band radio frequency signal, the second signal input port 102 is configured to input a second frequency band radio frequency signal, and the third signal input port 103 is configured to input a third frequency band radio frequency signal. The frequency of the first frequency band is less than the frequency of the second frequency band, and the frequency of the second frequency band is less than the frequency of the third frequency band.

[0079] The signal output ports include a first signal output port 104, a second signal output port 105, and a third signal output port 106. The distance between the first signal output port 104 and the second signal output port 105 is less than the distance between the first signal output port 104 and the third signal output port 106.

[0080] A first radio frequency (RF) chip 20 is disposed on the substrate 10 and connected to a first signal input port 101 and a second signal input port 102. A second RF chip 40 is disposed on the substrate 10 and connected to a third signal input port 103. A first switch chip 30 is disposed on the substrate 10 and connected to the first RF chip 30, a first signal output port 104, and a second signal output port 105. A second switch chip 50 is disposed on the substrate 10 and connected to the second RF chip 40 and a third signal output port 106.

[0081] In this embodiment, the radio frequency signal input to the first signal input port 101 can be a low-frequency radio frequency signal, the radio frequency signal input to the second signal input port 102 can be a mid-frequency radio frequency signal, and the radio frequency signal input to the third signal input port 103 can be a high-frequency radio frequency signal.

[0082] In this embodiment, the signal output ports may include a first signal output port 104, a second signal output port 105, and a third output port 106. The number of the first signal output port 104, the second signal output port 105, and the third signal output port 106 is multiple, i.e., two or more. In a preferred embodiment, the first signal output port 104 can output a low-frequency radio frequency (RF) signal, the second signal output port 105 can output a mid-frequency RF signal, and the third signal output port 106 can output a high-frequency RF signal.

[0083] In this embodiment, the distance between the first signal input port 101 and the second signal input port 102 is less than the distance between the first signal input port 101 and the third signal input port 103. Therefore, when the first RF chip 20 and the second RF chip 40 are disposed on the substrate 10, the first signal input port 101 and the second signal input port 102 can be closer to the first RF chip 20, and the third input port 103 can be closer to the second RF chip 40. This makes the layout of the traces between the first signal input port 101 and the first RF chip 20, the traces between the second signal input port 102 and the first RF chip 20, and the traces between the third signal input port 103 and the second RF chip 40 more reasonable. It should be noted that the "distance between the first signal input port 101 and the second signal input port 102" can be understood as the straight-line distance between the geometric center of the first signal input port 101 and the geometric center of the second signal input port 102. For example, when the first signal input port 101 is rectangular, its geometric center can be the center of the rectangle; when the first signal input port 101 is circular, its geometric center can be the center of the circle.

[0084] In this embodiment, the second switch chip 50 is connected to the third signal output port 106, and the distance between the first signal output port 104 and the second signal output port 105 is less than the distance between the first signal output port 104 and the third signal output port 106. Therefore, when the first switch chip 30 and the second switch chip 50 are disposed on the substrate 10, the first signal output port 104 and the second signal output port 105 can be closer to the first switch chip 30, and the third signal output port 106 can be closer to the second switch chip 50, making the layout of the traces between the first signal output port 104 and the first switch chip 30, the second signal output port 105 and the first switch chip 30, and the third signal output port 106 and the second switch chip 50 more reasonable. It should be noted here that the "distance between the first signal output port 104 and the second signal output port 105" can be understood as the straight-line distance between the geometric center of the first signal output port 104 and the geometric center of the second signal output port 105. For example, when the first signal output port 104 is rectangular, its geometric center can be the center of the rectangle; when the first signal output port 104 is circular, its geometric center can be the center of the circle.

[0085] In this embodiment, the first RF chip 20 may include a first power amplifier 210 and a second power amplifier 230. The first power amplifier 210 is connected to the first signal input port 101 and configured to receive the input signal from the first signal input port 101. The second power amplifier 230 is connected to the second signal input port 102 and configured to receive the input signal from the second signal input port 102. The second RF chip 40 includes a third power amplifier 410, which is connected to the third signal input port 103 and configured to receive the input signal from the third signal input port 103. The distance between the first RF chip 20 and the first switch chip 30 is less than the distance between the first RF chip 20 and the second switch chip 40. Specifically, it should be noted that in this embodiment and other embodiments, "distance between two devices" refers to the distance between the geometric centers of the two devices.

[0086] In this embodiment, since the distance between the first RF chip 20 and the first switch chip 30 is smaller than the distance between the first RF chip 20 and the second switch chip 40, and the first RF chip 20 and the first switch chip 30 are connected, in this embodiment, by reducing the RF signal transmission distance between the first RF chip 20 and the first switch chip 30 and the RF signal transmission distance between the second RF chip 40 and the second switch chip 50, the insertion loss and interference of the RF signal are reduced, resulting in better output quality when the RF signal is output from the RF module 100.

[0087] In this embodiment, the distance between the first signal input port 101 and the first RF chip 20 is less than the distance between the first signal input port 101 and the second RF chip 40. The first signal input port 101 receives a first-frequency RF signal, while the second signal input port 102 receives a second-frequency RF signal. Therefore, in this embodiment, both the first-frequency and second-frequency RF signals are amplified by the first RF chip 20 to reduce the transmission distance between the input port and the first RF chip 20, thereby reducing insertion loss and interference of the RF signals.

[0088] In this embodiment, the distance between the first signal output port 104 and the first switch chip 30 is less than the distance between the first signal output port 104 and the second switch chip 50. The first signal output port 104 outputs a first frequency band radio frequency signal, and the second signal output port 105 outputs a second frequency band radio frequency signal. Therefore, in this embodiment, both the first and second frequency band radio frequency signals are switched on and off by the first switch chip 30, thereby reducing the transmission distance of the first and second frequency band radio frequency signals from the switch chip to the output port, and reducing insertion loss and interference of the radio frequency signals. In summary, in the radio frequency module 100 provided in this embodiment, by reducing the transmission distance of the radio frequency signal in the input path and the output path, the insertion loss and interference of the radio frequency signal are reduced, resulting in better output quality when the radio frequency signal is output from the radio frequency module 100.

[0089] It should be noted that other features of the substrate 10, the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 in this embodiment can refer to and adopt the features of the substrate 10, the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 in the first embodiment, respectively. For the sake of brevity, they will not be described in detail here. Similarly, unless there is conflict, the substrate 10, the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 in the first embodiment can also have the features of the substrate 10, the first RF chip 20, the first switch chip 30, the second RF chip 40, and the second switch chip 50 in the second embodiment, respectively. The features of the two embodiments can be combined with each other.

[0090] Please see Figure 6This application's third embodiment provides a radio frequency (RF) module 90. The RF module 90 is a component that integrates two or more discrete devices, such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers, into a single independent module, thereby improving integration and hardware performance, and miniaturizing the size. Specifically, the RF module 90 can be applied to 4G and 5G communication devices such as smartphones, tablets, and smartwatches. In this embodiment, the RF module 90 may include a substrate 910, an RF chip 920, and a matching circuit 930. The substrate 910 has a power supply port 9100 and a signal output port 9120. The RF chip 920 is disposed on the substrate 910 and connected to the power supply port 9100. The matching circuit 930 is disposed on the substrate 910 and connected between the RF chip 920 and the signal output port 9120. The matching circuit 930 includes a first capacitor 940 and a first balun 950. One end of the first capacitor 940 is connected to the power supply port 9100, and the other end is grounded. The first balun 950 is connected between the RF chip 920 and the signal output port 9120, and surrounds the outer periphery of the first capacitor 940.

[0091] Therefore, by placing the first capacitor 940 in the middle of the first balun 950, the overall structure of the matching circuit 930 is made more compact, saving the layout area of ​​the substrate 910. Furthermore, in this embodiment, the RF chip 920 is connected to the power supply port 9100, and one end of the first capacitor 940 is also connected to the power supply port 9100, while the other end is grounded. Therefore, when the power supply voltage is input from the power supply port 9100 to the RF chip 920, the first capacitor 940 can play a decoupling role, thereby suppressing fluctuations in the power supply voltage and making the RF signal output by the RF chip 920 more stable.

[0092] The following describes the various modules included in the radio frequency module 90 in the third embodiment.

[0093] The substrate 910 is roughly rectangular and serves to fix and support the components (e.g., RF chip 920 and matching circuit 930) in the RF module 90. Specifically, the substrate 910 can be a copper-clad laminate. By performing hole processing, chemical copper plating, electroplating, etching, and other processes on the copper-clad laminate, circuits can be printed on the surface of the substrate 910.

[0094] In this embodiment, the substrate 910 is provided with a power supply port 9100 and a signal output port 9120. The power supply port 9100 is used to connect to an external power source, which supplies power to the components on the substrate 910. The external power source can provide a supply voltage, such as 3.3V, 5V, 12V, etc., and this embodiment does not specify a particular voltage. The signal output port 9120 is used to receive an output signal, which can be a radio frequency (RF) signal of a specified frequency. The specified frequency of the RF signal is determined by the communication device to which the RF module 90 is specifically applied. For example, if the communication device operates in the N77 band, the specified frequency can be 3.3GHz to 4.2GHz; if the communication device operates in the N78 band, the specified frequency can be 3.3GHz to 3.8GHz; and if the communication device operates in the N79 band, the specified frequency can be 4.5GHz to 5GHz. This embodiment does not specifically limit the output signal of the signal output port 9120.

[0095] Other features of the substrate 910 in this embodiment can be referenced and adopted from the features of the substrate 10 in the first embodiment, and will not be described in detail here for the sake of brevity. Similarly, if there is no conflict, the substrate 10 in the first embodiment can also have the features of the substrate 910 in the third embodiment, and the features of the two embodiments can be combined with each other.

[0096] An RF chip 920 is disposed on a substrate 910 and is used to amplify the power of the input RF signal. Specifically, the RF chip 920 can be mounted on the substrate 910, inserted into the substrate 910, or soldered onto the substrate 910 by means of soldering (e.g., tin soldering). In this embodiment, the RF chip 920 is connected to a power supply port 9100, which is used to supply power to the RF chip 920.

[0097] In this embodiment, the RF chip 920 employs a two-stage differential amplifier circuit structure. Please refer to [link / reference]. Figure 7The radio frequency (RF) chip 920 has a first signal output terminal 9210, a second signal output terminal 9220, a signal input terminal 9230, a first connection terminal 9240, a second connection terminal 9250, and a power supply terminal 9260. The first signal output terminal 9210 and the second signal output terminal 9220 are used to output a pair of differential signals. The signal input terminal 9230 is connected to a signal input port (not shown) on the substrate 910 and is used to input the RF signal to be processed. The first connection terminal 9240, the second connection terminal 9250, and the power supply terminal 9260 are respectively connected to the power supply port 9100 and are used to power the components inside the RF chip 920. Specifically, the RF chip 920 may include a first transistor 9201, a second transistor 9202, a third capacitor 9203, a fourth capacitor 9204, a second balun 9205, and a third transistor 9206.

[0098] exist Figure 7 In this circuit, the input terminal of the third transistor 9206 is connected to the signal input terminal 9230, the output terminal of the third transistor 9206 is connected to the second balun 9205, and the output terminal of the third transistor 9206 is also connected to the power supply terminal 9260, that is, the power supply terminal 9260 is used to supply power to the third transistor 9206. Therefore, the third transistor 9206 constitutes the first stage amplifier circuit. Specifically, the third transistor 9206 can be a bipolar junction transistor (BJT), with the base of the BJT being the input terminal of the third transistor 9206, the collector being the output terminal of the third transistor 9206, and the emitter being grounded.

[0099] The second balun 9205 includes a primary side 9207 and a secondary side 9208 coupled together. One end of the primary side 9207 is connected to the output of the third transistor 9206, and the other end is grounded. The secondary side 9208 is connected between the input of the first transistor 9201 and the input of the second transistor 9202. Therefore, the second balun 9205 is used to convert a single RF signal processed by the third transistor 9206 into a pair of RF signals, which are output to the first transistor 9201 and the second transistor 9202 respectively.

[0100] The input terminal of the first transistor 9201 is connected to one end of the secondary side 9208, and the output terminal of the first transistor 9201 is connected to the first signal output terminal 9210 through the third capacitor 9203. The output terminal of the first transistor 9201 is also connected to the first connection terminal 9240, that is, the first connection terminal 9240 is used to power the first transistor 9201. The input terminal of the second transistor 9202 is connected to the other end of the secondary side 9208, and the output terminal of the second transistor 9202 is connected to the second signal output terminal 9220 through the fourth capacitor 9204. The output terminal of the second signal output terminal 9220 is also connected to the second connection terminal 9250, that is, the second connection terminal 9250 is used to power the second transistor 9202. Therefore, the first transistor 9201 and the second transistor 9202 constitute the second stage amplifier circuit, and this amplifier circuit is a differential amplifier circuit. Specifically, the first transistor 9201 and the second transistor 9202 can be BJT transistors of the same type. The bases of the BJT transistors are the input terminals of the first transistor 9201 and the second transistor 9202, respectively. The collectors are the output terminals of the first transistor 9201 and the second transistor 9202, respectively. The emitters are grounded.

[0101] One end of the third capacitor 9203 is connected to the output terminal of the first transistor 9201, and the other end is connected to the first signal output terminal 9210. One end of the fourth capacitor 9204 is connected to the output terminal of the second transistor 9202, and the other end is connected to the second signal output terminal 9220. The third capacitor 9203 is used to filter the radio frequency signal output by the first transistor 9201, and the fourth capacitor 9204 is used to filter the radio frequency signal output by the second transistor 9202, making the differential signal output from the radio frequency chip 920 more stable.

[0102] It should be noted that this embodiment does not specifically limit the distribution of the first signal output terminal 9210, the second signal output terminal 9220, the signal input terminal 9230, the first connection terminal 9240, the second connection terminal 9250, and the power supply terminal 9260 in the RF chip 920, nor does it specifically limit the integration method of the first transistor 9201, the second transistor 9202, the third capacitor 9203, the fourth capacitor 9204, the second balun 9205, and the third transistor 9206 in the RF chip 920.

[0103] Please refer to it again. Figure 6 A matching circuit 930 is disposed on the substrate 910 and connected between the RF chip 920 and the signal output port 9120. It processes the RF signal output by the RF chip 920 and sends the processed RF signal to the signal output port 9120. Specifically, the matching circuit 930 can perform impedance conversion on the RF signal output by the RF chip 920 to achieve impedance matching, thereby improving the impedance matching performance of the RF chip 920.

[0104] In this embodiment, the matching circuit 930 may include a first capacitor 940 and a first balun 950. The first capacitor 940 and the first balun 950 may be disposed on the substrate 910 as discrete components to form the matching circuit 930. In some possible embodiments, the first capacitor 940 in the matching circuit 930 may be a surface-mount device (SMD), in which case the first capacitor 940 may be directly mounted on the substrate 910. The first balun 950 in the matching circuit 930 may be routed around the substrate 910 in the form of a trace.

[0105] Specifically, one end of the first capacitor 940 is connected to the power supply port 9100, and the other end is grounded. The first balun 950 is connected between the RF chip 920 and the signal output port 9120, and surrounds the outer periphery of the first capacitor 940. In this embodiment, by placing the first capacitor 940 in the middle of the first balun 950, the overall structure of the matching circuit 930 is more compact, saving layout area on the substrate 910. Furthermore, in this embodiment, the RF chip 920 is connected to the power supply port 9100, and one end of the first capacitor 940 is also connected to the power supply port 9100, with the other end grounded. Therefore, when the power supply voltage is input from the power supply port 9100 to the RF chip 920, the first capacitor 940 can play a decoupling role, thereby suppressing fluctuations in the power supply voltage and making the RF signal output by the RF chip 920 more stable.

[0106] In this embodiment, the first balun 950 may include a primary side trace 9500 and a secondary side trace 9520. The primary side trace 9500 surrounds the outer periphery of the first capacitor 940 and is connected between the first signal output terminal 9210 and the second signal output terminal 9220. At least a portion of the secondary side trace 9520 surrounds the outer periphery of the primary side trace 9500, and one end of the secondary side trace 9520 is grounded, while the other end is connected to the signal output port 9120. Therefore, in this embodiment, the first balun 950 converts a pair of differential signals output by the RF chip 920 into a single RF signal and outputs it to the signal output port 9120. It should be noted that "at least a portion of the secondary routing portion 9520 surrounds the outer periphery of the primary routing portion 9500" can mean that all the secondary routing portions 9520 surround the outer periphery of the primary routing portion 9500; or it can mean that a portion of the secondary routing portions 9520 surrounds the outer periphery of the primary routing portion 9500, and another portion of the secondary routing portions 9520 surrounds the inner periphery of the primary routing portion 9500. In this embodiment, the specific winding method of the secondary routing portions 9520 is not specifically limited.

[0107] In one implementation, the secondary side routing portion 9520 may include a first secondary side routing line 9521 and a second secondary side routing line 9526. The first secondary side routing line 9521 surrounds the outer periphery of the first capacitor 940 and is located within the surrounding area defined by the primary side routing portion 9500; that is, the first secondary side routing line 9521 surrounds the inner periphery of the primary side routing portion 9500, and the second secondary side routing line 9526 surrounds the outer periphery of the primary side routing portion 9500. Specifically, the first end 9522 of the first secondary side routing line 9521 is grounded, and the second end 9523 of the first secondary side routing line 9521 is electrically connected to the first end 9527 of the second secondary side routing line 9526. The second end 9528 of the second secondary side routing line 9526 is connected to the signal output port 9120. Therefore, the secondary side routing section 9520 in this embodiment may include a first secondary side routing line 9521 wound around the inner periphery of the primary side routing section 9500 and a second secondary side routing line 9526 wound around the outer periphery of the primary side routing section 9500, thereby extending the overall length of the secondary side routing section 9520, that is, increasing the overall coupling length of the primary and secondary sides of the first balun 950, and ensuring the output capability of the first balun 950.

[0108] In some possible embodiments, please refer to Figure 8 The secondary side wiring section 9520 may also include a first jumper 9529, which spans the primary side wiring section 9500 and connects between the second end 9523 of the first secondary side wiring 9521 and the first end 9527 of the second secondary side wiring 9526.

[0109] In some other possible embodiments, please refer to Figure 9 The primary side trace portion 9500 may include a first primary side trace 9501 and a second primary side trace 9506. The first primary side trace 9501 and the second primary side trace 9506 respectively surround both sides of the first capacitor 940 to jointly define the surrounding area. Specifically, the first end 9502 of the first primary side trace 9501 is connected to the first signal output terminal 9210, and the second end 9503 of the first primary side trace 9501 is grounded. The first end 9507 of the second primary side trace 9506 is connected to the second signal output terminal 9220, and the second end 9508 of the second primary side trace 9506 is grounded. The second ends 9503 of the first primary side trace 9501 and the second ends 9508 of the second primary side trace 9506 are spaced apart.

[0110] The second end 9523 of the first secondary side cable 9521 is directly connected to the first end 9527 of the second secondary side cable 9526. For example, the first secondary side cable 9521 and the second secondary side cable 9526 can belong to the same cable. After the first secondary side cable 9521 and the second secondary side cable 9526 are directly connected, they pass through the gap between the second end 9503 of the first primary side cable 9501 and the second end 9508 of the second primary side cable 9506. Therefore, and Figure 8 Compared with the implementation method of using jumpers to connect the first secondary side trace 9521 and the second secondary side trace 9526 in the embodiment, the first secondary side trace 9521 and the second secondary side trace 9526 in this embodiment do not require additional traces when connecting, which makes the first balun 950 more stable during operation and also saves the hardware cost of the RF module 90.

[0111] Please see Figure 10 The RF module 90 may further include a switch chip 960, which is disposed on the substrate 910. The end of the secondary side trace 9520 furthest from ground (i.e., the second end 9528 of the second secondary side trace 9526) is connected to the signal output port 9120 via the switch chip 960. The switch chip 960 controls the output state of the RF signal processed by the first balun 950. For example, when the switch chip 960 is in the ON state, the RF signal processed by the first balun 950 can be output smoothly from the RF module 90; conversely, when the switch chip 960 is in the OFF state, the RF signal processed by the first balun 950 cannot be output from the RF module 90. Specifically, the switch chip 960 may be mounted on the substrate 910, inserted into the substrate 910, or soldered onto the substrate 910 by means of soldering (e.g., soldering).

[0112] The matching circuit 930 may further include a second capacitor 970, which is disposed on the substrate 910. The second capacitor 970 is connected between the end of the secondary side trace 9520 away from ground (i.e., the second end 9528 of the second secondary side trace 9526) and the switching chip 960, and is used to filter the RF signal output from the first balun 950, making the RF signal output from the RF module 90 more stable. Specifically, the second capacitor 970 may be a surface mount device, in which case the second capacitor 970 can be directly mounted on the substrate 910.

[0113] In this embodiment, the matching circuit 930 may further include a wiring portion 980, a second jumper 982, and a third jumper 984. The wiring portion 980 is located within the surrounding area defined by the original side trace portion 9500 and is electrically connected to the power supply port 9100. The end of the first capacitor 940 furthest from ground is connected to the power supply port 9100 via the wiring portion 980. The second jumper 982 connects the first connection terminal 9240 and the wiring portion 980, and the third jumper 984 connects the second connection terminal 9250 and the wiring portion 980. Therefore, the RF module 90 supplies power to the first connection terminal 9240 via the second jumper 982 and to the second connection terminal 9250 via the third jumper 984. Further, the second jumper 982 can be equivalent to an inductor between the power supply port 9100 and the first connection terminal 9240. This inductor and the first capacitor 940 constitute an LC resonant circuit, thereby improving the impedance matching performance of the RF chip 920. Similarly, the third jumper 984 can be equivalent to an inductor between the power supply port 9100 and the second connection terminal 9250. This inductor and the first capacitor 940 form an LC resonant circuit, thereby improving the impedance matching performance of the RF chip 920.

[0114] In some possible embodiments, the wiring section 980 may include a first terminal 9800, a second terminal 9820, and a first trace 9840. The first terminal 9800 and the first connection terminal 9240 are located on one side of the first capacitor 940, and a second jumper 982 connects between the first terminal 9800 and the first connection terminal 9240. The second terminal 9820 and the second connection terminal 9250 are located on the other side of the first capacitor 940, and a third jumper 984 connects between the second terminal 9820 and the second connection terminal 9250. Because the first terminal 9800 and the second terminal 9820 are located on opposite sides of the first capacitor 940, and the second terminal 9820 and the second connection terminal 9250 are located on opposite sides of the first capacitor 940, the possibility of the second jumper 982 and the third jumper 984 crossing during connection, which could reduce the output performance of the RF chip 920, is avoided.

[0115] The first trace 9840 is connected between the first terminal 9800 and the second terminal 9820, and is electrically connected to the power supply port 9100. The end of the first capacitor 940 furthest from ground is connected to the power supply port 9100 via the first trace 9840. In some possible embodiments, the first terminal 9800 and the second terminal 9820 can be opposite ends of the first trace 9840, and the first terminal 9800, the second terminal 982, and the first trace 9840 can be different parts of the same trace, making the connection of the first capacitor 940, the second jumper 982, and the third jumper 984 more reliable. This embodiment does not specifically limit the specific implementation of the wiring section 980.

[0116] A third embodiment of this application provides a radio frequency (RF) module 90, which may include a substrate 910, an RF chip 920, and a matching circuit 930. The substrate 910 has a power supply port 9100 and a signal output port 9120. The RF chip 920 is disposed on the substrate 910 and connected to the power supply port 9100. The matching circuit 930 is disposed on the substrate 910 and connected between the RF chip 920 and the signal output port 9120. The matching circuit 930 includes a first capacitor 940 and a first balun 950. One end of the first capacitor 940 is connected to the power supply port 9100, and the other end is grounded. The first balun 950 is connected between the RF chip 920 and the signal output port 9120 and surrounds the outer periphery of the first capacitor 940.

[0117] Therefore, by placing the first capacitor 940 in the middle of the first balun 950, the overall structure of the matching circuit 930 is made more compact, saving the layout area of ​​the substrate 910. Furthermore, in this embodiment, the RF chip 920 is connected to the power supply port 9100, and one end of the first capacitor 940 is also connected to the power supply port 9100, while the other end is grounded. Therefore, when the power supply voltage is input from the power supply port 9100 to the RF chip 920, the first capacitor 940 can play a decoupling role, thereby suppressing fluctuations in the power supply voltage and making the RF signal output by the RF chip 920 more stable.

[0118] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0119] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0120] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0121] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0122] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0123] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency module, characterized in that, include: The substrate includes a first layout area and a second layout area, which are located at different parts of the substrate; the substrate also includes a first signal output port and a second signal output port. A first radio frequency chip, disposed in the first layout area, includes a first power amplifier and a second power amplifier, the first power amplifier being configured to receive a first input signal, and the second power amplifier being configured to receive a second input signal, wherein the frequency of the first input signal is lower than the frequency of the second input signal; A first switching chip is disposed in the first layout area and is respectively connected to the output terminal of the first power amplifier and the output terminal of the second power amplifier; the first switching chip is also respectively connected to the first signal output port and the second signal output port, the first signal output port is used to output the first input signal after power amplification by the first power amplifier, and the second signal output port is used to output the second input signal after power amplification by the second power amplifier; A second radio frequency chip, disposed in the second layout area, includes a third power amplifier configured to receive a third input signal, the frequency of which is higher than the frequency of the second input signal; and The second switching chip is disposed in the second layout area and connected to the output terminal of the third power amplifier.

2. The radio frequency module according to claim 1, characterized in that, The first layout area and the second layout area are arranged side by side on the substrate and are adjacent to each other.

3. The radio frequency module according to claim 1, characterized in that, The substrate is further provided with a first signal input port, a second signal input port and a third signal input port. The first signal input port and the second signal input port are disposed in the first layout area and are located on the side of the first radio frequency chip away from the first switch chip. The first signal input port is connected to the input terminal of the first power amplifier, and the second signal input port is connected to the input terminal of the second power amplifier; The third signal input port is disposed in the second layout area and is located on the side of the second RF chip away from the second switch chip; the third signal input port is connected to the input terminal of the third power amplifier, and the distance between the first signal input port and the second signal input port is less than the distance between the second signal input port and the third signal input port.

4. The radio frequency module according to claim 3, characterized in that, The first signal input port, the second signal input port, and the third signal input port are spaced apart in a first direction; The first signal input port, the first radio frequency chip, and the first switch chip are arranged sequentially in the second direction; the second signal input port, the first radio frequency chip, and the first switch chip are arranged sequentially in the second direction; the third signal input port, the second radio frequency chip, and the second switch chip are arranged sequentially in the second direction, and the second direction intersects the first direction.

5. The radio frequency module according to claim 1, characterized in that, The first switching chip includes a first switching unit and a second switching unit, wherein the first switching unit is connected to the output terminal of the first power amplifier, and the second switching unit is connected to the output terminal of the second power amplifier; The first signal output port is located in the first layout area and connected to the first switch unit; The second signal output port is located in the first layout area and is connected to the second switch unit.

6. The radio frequency module according to claim 5, characterized in that, The substrate is further provided with a third signal output port, which is disposed in the second layout area and connected to the second switch chip. The distance between the first signal output port and the second signal output port is less than the distance between the first signal output port and the third signal output port.

7. The radio frequency module according to claim 1, characterized in that, The first radio frequency chip and the second radio frequency chip are spaced apart in a first direction, the first radio frequency chip and the first switch chip are spaced apart in a second direction, and the second radio frequency chip and the second switch chip are spaced apart in the second direction, with the first direction and the second direction intersecting.

8. The radio frequency module according to claim 7, characterized in that, The radio frequency module further includes a first matching circuit and a second matching circuit, which are disposed in the first layout area; the first matching circuit is located on the side of the first radio frequency chip away from the second radio frequency chip, and is spaced apart from the first switching chip in the second direction; the second matching circuit is located on the side of the first radio frequency chip facing the first switching chip, and is spaced apart from the first radio frequency chip in the second direction. The first matching circuit is connected between the first power amplifier and the first switching chip, and the second matching circuit is connected between the second power amplifier and the first switching chip.

9. The radio frequency module according to claim 8, characterized in that, The first matching circuit includes an inductor, and the second matching circuit includes a balun; the substrate includes a first metal layer and a second metal layer spaced apart; the inductor and the balun are disposed on the first metal layer; and the signal input port and the signal output port are disposed on the second metal layer.

10. The radio frequency module according to claim 8, characterized in that, The substrate is also provided with a first power supply port, and the second matching circuit includes a capacitor and a balun. One end of the capacitor is connected to the first power supply port, and the other end is grounded; The balun is connected between the second power amplifier and the first switching chip, and surrounds the outer periphery of the capacitor.

11. The radio frequency module according to claim 10, characterized in that, The second power amplifier has a first signal output terminal and a second signal output terminal; The balun includes a primary side routing section and a secondary side routing section; the primary side routing section surrounds the outer periphery of the capacitor and is connected between the first signal output terminal and the second signal output terminal; At least a portion of the secondary side routing portion surrounds the outer periphery of the primary side routing portion, and one end of the secondary side routing portion is grounded, while the other end is connected to the first switch chip.

12. The radio frequency module according to claim 11, characterized in that, The secondary side wiring section includes a first secondary side wiring and a second secondary side wiring; The first secondary side trace surrounds the outer periphery of the capacitor and is located within the surrounding area defined by the primary side trace portion; the second secondary side trace surrounds the outer periphery of the primary side trace portion. The first end of the first secondary side trace is grounded, and the second end of the first secondary side trace is electrically connected to the first end of the second secondary side trace; the second end of the second secondary side trace is connected to the first switch chip.

13. The radio frequency module according to claim 7, characterized in that, The radio frequency module also includes a control chip, which is disposed on the substrate; The control chip is located between the first RF chip and the second RF chip, and is connected to the first RF chip, the first switch chip, the second RF chip, and the second switch chip, respectively.

14. The radio frequency module according to claim 7, characterized in that, The radio frequency module further includes a third matching circuit, which is disposed in the second layout area; the third matching circuit is located between the second radio frequency chip and the second switching chip, and is respectively connected to the third power amplifier and the second switching chip.

15. The radio frequency module according to claim 1, characterized in that, The first power amplifier is a single-ended amplifier circuit, while the second and third power amplifiers are differential amplifier circuits.

16. The radio frequency module according to claim 1, characterized in that, Both the first power amplifier and the second power amplifier are two-stage amplifier circuits. The first power amplifier includes a first power supply terminal and a second power supply terminal; the second power amplifier includes a third power supply terminal and a fourth power supply terminal. The substrate is further provided with a first power supply port and a second power supply port, the first power supply port being connected to the first power supply terminal and the third power supply terminal, and the second power supply port being connected to the second power supply terminal and the fourth power supply terminal.

17. The radio frequency module according to claim 16, characterized in that, The third power amplifier is a two-stage amplifier circuit, and the third power amplifier includes a fifth power supply terminal and a sixth power supply terminal; The substrate is also provided with a third power supply port, which is connected to the fifth power supply terminal and the sixth power supply terminal.

18. A radio frequency module, characterized in that, include: A substrate is provided with a signal input port and a signal output port. The signal input port includes a first signal input port, a second signal input port, and a third signal input port. The distance between the first signal input port and the second signal input port is less than the distance between the first signal input port and the third signal input port. The first signal input port is configured to input a radio frequency signal of a first frequency band, the second signal input port is configured to input a radio frequency signal of a second frequency band, and the third signal input port is configured to input a radio frequency signal of a third frequency band. The frequency of the first frequency band is less than the frequency of the second frequency band, and the frequency of the second frequency band is less than the frequency of the third frequency band. The signal output port includes a first signal output port, a second signal output port, and a third signal output port; the distance between the first signal output port and the second signal output port is less than the distance between the first signal output port and the third signal output port; A first radio frequency chip is disposed on the substrate and is connected to the first signal input port and the second signal input port. A second radio frequency chip is disposed on the substrate and connected to the third signal input port; A first switching chip is disposed on the substrate and connected to the first radio frequency chip, the first signal output port and the second signal output port; as well as The second switch chip is disposed on the substrate and connected to the second radio frequency chip and the third signal output port; The substrate includes a first layout area and a second layout area, which are located at different parts of the substrate. The first radio frequency chip and the first switch chip are disposed in the first layout area. The second radio frequency chip and the second switch chip are disposed in the second layout area.

19. The radio frequency module according to claim 18, characterized in that, The first radio frequency chip includes a first power amplifier and a second power amplifier. The first power amplifier is connected to the first signal input port and configured to receive the input signal from the first signal input port. The second power amplifier is connected to the second signal input port and configured to receive the input signal from the second signal input port. The second radio frequency chip includes a third power amplifier, which is connected to the third signal input port and configured to receive the input signal from the third signal input port; The distance between the first RF chip and the first switch chip is less than the distance between the first RF chip and the second switch chip.

20. The radio frequency module according to claim 19, characterized in that, The distance between the first signal input port and the first RF chip is less than the distance between the first signal input port and the second RF chip.

21. The radio frequency module according to claim 20, characterized in that, The distance between the first signal output port and the first switch chip is less than the distance between the first signal output port and the second switch chip.

22. A radio frequency module, characterized in that, include: A substrate, wherein the substrate is provided with a power supply port and a signal output port; A first radio frequency chip includes a first power amplifier and a second power amplifier, the first power amplifier being configured to receive a first input signal and the second power amplifier being configured to receive a second input signal, wherein the frequency of the first input signal is lower than the frequency of the second input signal; A first switching chip is connected to the output terminals of the first power amplifier and the second power amplifier, respectively; the first switching chip is also connected to the signal output port. The second radio frequency chip includes a third power amplifier configured to receive a third input signal, the frequency of which is higher than the frequency of the second input signal. The second switching chip is connected to the output terminal of the third power amplifier; as well as A matching circuit is disposed on the substrate and connected between the second power amplifier and the first switching chip. The matching circuit includes a first capacitor and a first balun. One end of the first capacitor is connected to the power supply port, and the other end is grounded; The first balun is connected between the second power amplifier and the first switching chip, and surrounds the outer periphery of the first capacitor; The substrate includes a first layout area and a second layout area, which are located at different parts of the substrate. The first radio frequency chip and the first switch chip are disposed in the first layout area. The second radio frequency chip and the second switch chip are disposed in the second layout area.

23. The radio frequency module according to claim 22, characterized in that, The second power amplifier has a first signal output terminal and a second signal output terminal; The first balun includes a primary side routing section and a secondary side routing section; the primary side routing section surrounds the outer periphery of the first capacitor and is connected between the first signal output terminal and the second signal output terminal; At least a portion of the secondary side routing portion surrounds the outer periphery of the primary side routing portion, and one end of the secondary side routing portion is grounded, while the other end is connected to the first switch chip.

24. The radio frequency module according to claim 23, characterized in that, The secondary side wiring section includes a first secondary side wiring and a second secondary side wiring; The first secondary side trace surrounds the outer periphery of the first capacitor and is located within the surrounding area defined by the primary side trace portion; the second secondary side trace surrounds the outer periphery of the primary side trace portion. The first end of the first secondary side trace is grounded, and the second end of the first secondary side trace is electrically connected to the first end of the second secondary side trace; the second end of the second secondary side trace is connected to the first switch chip.

25. The radio frequency module according to claim 24, characterized in that, The secondary side routing section also includes a first jumper wire, which spans the primary side routing section and connects the second end of the first secondary side routing wire and the first end of the second secondary side routing wire.

26. The radio frequency module according to claim 24, characterized in that, The original edge routing section includes a first original edge routing and a second original edge routing; The first primary side trace and the second primary side trace are respectively wrapped around both sides of the first capacitor to jointly define the surrounding area; the first end of the first primary side trace is connected to the first signal output terminal, and the second end of the first primary side trace is grounded; the first end of the second primary side trace is connected to the second signal output terminal, and the second end of the second primary side trace is grounded; the second ends of the first primary side trace and the second end of the second primary side trace are spaced apart. The second end of the first secondary side trace is directly connected to the first end of the second secondary side trace, and passes through the gap between the second end of the first primary side trace and the second primary side trace.

27. The radio frequency module according to any one of claims 23 to 26, characterized in that, The matching circuit also includes a second capacitor; the end of the secondary side trace away from ground is connected to the signal output port in sequence through the second capacitor and the first switch chip.

28. The radio frequency module according to any one of claims 23 to 26, characterized in that, The second power amplifier also has a signal input terminal, and the second power amplifier includes a first transistor, a second transistor, a third capacitor, and a fourth capacitor; The input terminals of the first transistor and the second transistor are respectively connected to the signal input terminal; One end of the third capacitor is connected to the output terminal of the first transistor, and the other end is connected to the first signal output terminal; One end of the fourth capacitor is connected to the output terminal of the second transistor, and the other end is connected to the second signal output terminal.

29. The radio frequency module according to claim 28, characterized in that, The second power amplifier also has a first connection terminal and a second connection terminal, wherein the first connection terminal is connected to the output terminal of the first transistor and the second connection terminal is connected to the output terminal of the second transistor; The matching circuit also includes a wiring section, a second jumper, and a third jumper; The wiring section is located within the surrounding area defined by the original side wiring section and is electrically connected to the power supply port; The end of the first capacitor furthest from ground is connected to the power supply port via the wiring portion; The second jumper is connected between the first connection terminal and the wiring part, and the third jumper is connected between the second connection terminal and the wiring part.

30. The radio frequency module according to claim 29, characterized in that, The wiring section includes a first terminal, a second terminal, and a first wiring; The first terminal and the first connection terminal are located on one side of the first capacitor, and the second jumper is connected between the first terminal and the first connection terminal; The second terminal and the second connection terminal are located on the other side of the first capacitor, and the third jumper is connected between the second terminal and the second connection terminal; The first trace connects between the first terminal and the second terminal and is electrically connected to the power supply port; the end of the first capacitor furthest from ground is connected to the power supply port through the first trace.

31. The radio frequency module according to claim 28, characterized in that, The second power amplifier also has a power supply terminal, which is connected to the power supply port; The second power amplifier also includes a second balun and a third transistor, the second balun comprising a primary side and a secondary side coupled to each other; The input terminal of the third transistor is connected to the signal input terminal, the output terminal of the third transistor is connected to one end of the primary side, and the other end of the primary side is grounded; the output terminal of the third transistor is also connected to the power supply terminal. The secondary side is connected between the input terminal of the first transistor and the input terminal of the second transistor.

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