Implantable device

Abstract

An implantable device comprises a body having a sealed cavity, a signal processing device accommodated in the cavity, and an electrode located outside the body and electrically connected with the signal processing device through a feed-through electrode provided on the body. The signal interaction between the device inside the cavity and the electrode outside the cavity can be realized while ensuring the air tightness of the device inside the cavity and the long-term stability in the implant environment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of brain-computer interface, in particular to an implantable device. BACKGROUND

[0002] Brain Computer Interface (BCI) refers to a direct connection created between the brain of a human or an animal and an external device for realizing information exchange between the brain and the device. The implantable device is implanted in a living body through a chip, and is connected with brain cells through electrodes, so as to realize information exchange between the brain and the device.

[0003] However, the existing implantable device generally only focuses on how to realize signal interaction, and the performance in device airtightness and long-term stability under implantation environment is not good. SUMMARY

[0004] The technical problem solved by the present application is how to realize signal interaction of the implantable device under the premise of ensuring that the implantable device maintains relatively optimal device airtightness and long-term stability under implantation environment.

[0005] To solve the above technical problem, the present application provides an implantable device, comprising: a body having a sealed cavity; a signal processing device accommodated in the cavity; and an electrode located on the outside of the body, the electrode being electrically connected with the signal processing device through a feedthrough electrode arranged on the body.

[0006] Optionally, the body is made of glass.

[0007] Optionally, the body comprises a cover portion and a substrate arranged oppositely, and a side wall located between the cover portion and the substrate, the cover portion, the substrate and the side wall jointly forming the cavity.

[0008] Optionally, the substrate has a first side facing the cover portion and an opposite second side, the feedthrough electrode communicating the first side and the second side, the signal processing device being located on the first side and electrically connected with the feedthrough electrode, and the electrode being located on the second side and electrically connected with the feedthrough electrode.

[0009] Optionally, the implantable device further comprises a metal interconnection layer located between the signal processing device and the first side, the metal interconnection layer being electrically connected with the signal processing device and the feedthrough electrode respectively.

[0010] Optionally, the substrate is provided with a feedthrough hole penetrating through the first side and the second side, and the feedthrough hole is filled with a conductive material to form the feedthrough electrode.

[0011] Optionally, the body comprises: a main body portion formed with the cavity; an extension portion extending outwardly from the main body portion and separable from the main body portion; and the electrode comprises: a first portion formed on the main body portion; and a second portion formed on the extension portion, the second portion having a non-zero gap with the extension portion.

[0012] Optionally, the first portion comprises an electrode layer, and / or the second portion has a comb structure to form at least one electrode wire, each of the electrode wires comprising an electrode contact.

[0013] Optionally, the implantable device further comprises: a sacrificial layer located at least between the second portion and the extension portion.

[0014] Optionally, the sacrificial layer is further located between the first portion and the main body portion, and the part of the sacrificial layer between the first portion and the main body portion covers at least a portion of the main body portion that interferes with the first portion.

[0015] Optionally, the main body portion comprises: a cover portion and a substrate portion oppositely arranged, and a sidewall between the cover portion and the substrate portion, the cover portion, the substrate portion and the sidewall collectively defining the cavity, wherein a projection of the part of the sacrificial layer between the first portion and the main body portion in a first direction covers at least an overlapping region of a projection of the sidewall and a projection of the first portion in the first direction, the first direction being parallel to a direction in which the cover portion points to the substrate portion.

[0016] Optionally, the implantable device further comprises: a limiting portion arranged in the cavity, the limiting portion being configured to limit a movement of the signal processing device in the cavity.

[0017] Optionally, the signal processing device comprises a multi-layer structure, and each layer of the multi-layer structure is electrically connected to another layer of the multi-layer structure by an electrical connector.

[0018] Optionally, the electrode comprises a plurality of electrodes distributed in different regions on an outer side of the body, and the plurality of electrodes are directly or indirectly electrically connected to the signal processing device via the feedthrough electrode.

[0019] Optionally, at least one electrode of the plurality of electrodes is electrically connected to the remaining electrodes, and the at least one electrode and the remaining electrodes are electrically connected to the signal processing device via the feedthrough electrode.

[0020] Optionally, the plurality of electrodes comprises a first electrode group and a second electrode group, the electrodes in the first electrode group are electrically connected to each other, the first electrode group and the second electrode group are electrically connected, and the electrodes in the second electrode group are electrically connected to the signal processing device via the feedthrough electrode.

[0021] Optionally, the number of electrodes in the second electrode group is greater than or equal to two, and at least one electrode is not electrically connected to the remaining electrodes.

[0022] Compared with the prior art, the technical scheme of the embodiment of the application has the following beneficial effects:

[0023] The embodiment of the application provides an implantable device, comprising: a body having a sealed cavity; a signal processing device accommodated in the cavity; and an electrode located outside the body and electrically connected to the signal processing device through a feed-through electrode arranged on the body.

[0024] Compared with the prior art, the technical scheme of the embodiment of the application has the following beneficial effects:

[0025] Further, the body is made of glass. Glass has good light transmittance and good chemical stability, and therefore, the implantable device made of glass in the embodiment can better adapt to application scenarios in which the interior of a sealed cavity needs to be communicated with the outside to exchange data or energy for measurement or information processing. Further, the glass material of the body makes it possible for the implantable device in the embodiment to exchange data or transmit energy through the body by using light signals. Further, the entire body is made of glass, and the single glass material composition of the main structure can reduce the long-term biocompatibility problems of other multiple different types of materials that may be introduced by the implantable device.

[0026] Further, glass has good heat insulation performance, so that the implantable device in the embodiment can effectively control the heat release of the signal processing device sealed in the glass cavity. By allowing the heat released instantaneously in the glass cavity to be released and conducted to the outside of the body in a slower manner, the implant safety can be protected.

[0027] Further, the body of glass material can be connected by low-temperature welding. Since the low-temperature welding has little influence on the performance of the signal processing device, the signal processing device can be installed into the cavity and then the cavity is sealed by low-temperature welding. Thus, the signal processing device can be installed into the cavity by flip-chip technology, which is beneficial to reduce the complexity of preparation.

[0028] Further, the body of glass material can be connected by low-temperature welding. Since the low-temperature welding has little influence on the performance of the signal processing device, the signal processing device can be installed into the cavity and then the cavity is sealed by low-temperature welding. Thus, the signal processing device can be installed into the cavity by flip-chip technology, which is beneficial to reduce the complexity of preparation. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 is a schematic diagram of an implantable device according to an embodiment of the present application;

[0030] Figure 2 is a schematic diagram of an implantable device according to an embodiment of the present application; Figure 1 is a partial enlarged view of region A in

[0031] Figure 3 is a schematic diagram of an implantable device according to an embodiment of the present application; Figure 1 is a sectional view of the implantable device shown in

[0032] Figure 4 is a schematic diagram of an implantable device according to an embodiment of the present application; Figure 1 is a top view of an intermediate state of the implantable device shown in

[0033] Figure 5 is a sectional view of the structure shown in Figure 4

[0034] Figure 6 is a flow chart of a forming method of an implantable device according to an embodiment of the present application;

[0035] Figures 7 to 9 is a schematic diagram of a forming process of an implantable device in a typical application scenario according to an embodiment of the present application;

[0036] Figure 10 is a sectional view of an intermediate state of an implantable device in a variant according to an embodiment of the present application;

[0037] Figure 11 is a schematic diagram of an implantable device in a variant according to an embodiment of the present application. DETAILED DESCRIPTION

[0038] As described in the background, the existing implantable devices generally only focus on how to realize the interaction of signals, and the performance in terms of device airtightness and long-term stability in the implanted environment is not satisfactory.

[0039] ​For example, there is an implantable device that adopts a sandwich structure, and electrodes are sandwiched by a signal acquisition chip (for example, an Analog-to-Digital Converter, ADC) and a Printed circuit board, PCB, to realize signal interaction. However, the overall device formed by using this structure does not have sealing properties, and in particular, there may be gaps between the ADC and the electrodes, and between the electrodes and the PCB, which cannot guarantee the sealing of the entire implantable device.

[0040] Another existing implantable device adopts ceramic Al2O3 as a substrate and is sealed by brazing and laser welding. This implantable device has a complex process during preparation, and generally needs to perform two steps in sequence: 1, preparing a ceramic substrate with a brazing connecting metal ring; 2, welding internal component devices with a ceramic substrate with a welded plating layer. The overall device obtained by preparation can achieve sealing, but the sealing structure components in contact with the external environment are too many to meet the long-term biological compatibility requirements for implantable devices in international standards and national standards. In addition, brazing needs to be performed at high temperature, which leads to the internal devices having to be installed on the ceramic substrate after the metal ring. However, after the metal ring is welded to the ceramic substrate by brazing, the internal devices cannot be installed by flip-chip mounting due to the influence of the height of the metal ring, but can only be welded by melting the second plating layer by reflow soldering, which greatly increases the complexity of the preparation process.

[0041] To solve the above technical problems, an embodiment of the present application provides an implantable device, comprising: a body having a sealed cavity; a signal processing device accommodated in the cavity; and an electrode located on the outside of the body, the electrode being electrically connected to the signal processing device through a feed-through electrode provided on the body.

[0042] By using the present embodiment, signal interaction between the internal device in the cavity and the external electrode can be realized while ensuring the air tightness of the internal device in the cavity and the long-term stability in the implanted environment. Specifically, the present embodiment provides a structure that is sealed and has an electrode, and an electrode attached to the outer surface of the body is prepared and processed on a base material and connected to the sealed signal processing device in the cavity through a metal conductor (such as a feed-through electrode) provided inside. Thus, the feed-through sealing is realized by the integrated sealing method of preparation and processing on the base material, that is, the isolation of the internal environment of the cavity from the external environment is ensured while the signal communication is realized, thereby realizing the stability of long-term signal processing and the flux of signal transmission. Further, the flexible electrode can include multi-channel electrode integration.

[0043] In order to make the above objectives, characteristics and benefits of the present application more obvious and comprehensible, specific embodiments of the present application are described in detail below with reference to the drawings.

[0044] Figure 1 is a schematic diagram of an implantable device 100 according to an embodiment of the present application, Figure 2 is Figure 1 is a partial enlarged view of region A in Figure 3 is Figure 1 is a sectional view of the implantable device 100 shown in Figure 2 and Figure 3 are respectively used to identify different functional structures with different fill patterns.

[0045] The present embodiment can be applied to a brain-computer interface application scenario, and the implantable device 100 provided by the present embodiment can realize signal interaction between the brain and the device while ensuring better device sealing and long-term stability of the implanted environment.

[0046] Specifically, in combination with Figures 1 to 3 , the implantable device 100 can include a body 110, and the body 110 has a sealed cavity 101. For example, the body 110 can be a hollow columnar body, and the hollow part is suitable for forming the cavity 101. The environment in the cavity 101 is isolated from the external environment.

[0047] Further, the body 110 is made of glass. In some embodiments, the body 110 is composed of a single material component, which is a glass material component. In some embodiments, the single material component can also be other material components that have better long-term stability in the implanted body, such as ceramic.

[0048] In some embodiments, the body 110 can include a cover portion 111 and a substrate 112 arranged opposite to each other, and a side wall 113 located between the cover portion 111 and the substrate 112. For example, along the direction (indicated as the x direction in the figure) of the cover portion 111 pointing to the substrate 112, the cover portion 111 and the substrate 112 are located on both sides of the side wall 113 and are connected with the side wall 113 respectively.

[0049] Further, the cover portion 111, the substrate 112 and the side wall 113 jointly enclose the cavity 101. For example, the cover portion 111 and the substrate 112 can be connected to the two sides of the side wall 113 along the x direction by laser welding.

[0050] For any of the connection regions of the cover portion 111 and the side wall 113 and the connection regions of the substrate 112 and the side wall 113, the connection region includes an end portion of the side wall 113 along the x direction and a contact region of the cover portion 111 or the substrate 112 with the end portion. The connection region has no air gap, thereby achieving better air tightness.

[0051] Further reference Figures 1 to 3 The implantable device 100 may include a signal processing device 120 housed within the cavity 101. The signal processing device 120 may be, for example, an electronic device including an ADC and / or other signal output devices.

[0052] In some embodiments, the signal processing device 120 may be mounted into the cavity 101 using a flip-chip method. For example, the substrate 112 may have a first side 112a and a second side 112b opposite to each other, wherein the first side 112a faces the cover portion 111, and the signal processing device 120 may be mounted onto the first side 112a using a flip-chip process.

[0053] In some embodiments, the signal processing device 120 may include one or more components 121, which may be electrically connected to each other via electrical connectors 122 or metal interconnect layers 130.

[0054] Furthermore, component 121 can be selected from chips, PCBs, and flexible PCBs.

[0055] Furthermore, the electrical connector 122 can be, for example, a connecting cable.

[0056] For example, on a plane perpendicular to the x-direction, one or more components 121 may be located on the same layer and distributed at different positions on the substrate 112.

[0057] For example, the signal processing device 120 may include a multi-layer structure, with each layer electrically connected to the other via an electrical connector 122.

[0058] by Figure 3 Taking the illustrated structure as an example, the signal processing device 120 has a two-layer structure and specifically includes a first PCB 123, a second PCB 124, and a first chip 125. The first PCB 123 and the first chip 125 are located on the same layer and are connected to the first side 112a through a metal interconnect layer 130. Furthermore, the second PCB 124 is located on the side of the first PCB 123 and the first chip 125 that is away from the first side 112a and is electrically connected to the first PCB 123 through an electrical connector 122.

[0059] Furthermore, the metal interconnect layer 130 (also referred to as the connected metal layer) may include a solder layer, and may also include conductive structures between different solder potentials in the solder layer, which can be used to connect signal or power paths between the various components 121. For example, the metal interconnect layer 130 may be formed on the first side 112a, and then the signal processing device 120 may be soldered to the metal interconnect layer 130. The metal interconnect layer 130 located between the signal processing device 120 and the first side 112a provides an electrical connection between the signal processing device 120 and the outside of the body 110.

[0060] In one implementation, with continued reference to Figure 3 The implantable device 100 can also include a stop 131 disposed within the cavity 101, the stop 131 configured to limit movement of the signal processing device 120 within the cavity 101.

[0061] In particular, one or more forms of the stop 131 can be used to secure the signal processing device 120 depending on the particular configuration of the signal processing device 120 within the cavity 101, to reduce or even eliminate the extent of movement of the signal processing device 120 within the cavity 101.

[0062] For example, as shown in FIG. 1 1, the signal processing device 120 can include a first chip 125 and a second PCB 124, which can be stacked vertically along the x-direction. In this case, the stop 131 can be disposed between the first chip 125 and the second PCB 124 to limit the relative position between the two. Figure 3

[0063] Further, a spacer 133 can be disposed between the second PCB 124 and the cover 111 to serve as a stop and secure the signal processing device 120. Thus, depending on the actual internal configuration of the cavity 101, the spacer 133 or the stop 131 can be used to secure the different circuit elements or chips in place.

[0064] For example, when a relatively soft cable is used to electrically connect the two vertically stacked components, the spacer 133 can be used to reduce or even eliminate the extent of movement of the lower component (i.e., the component further from the first side 112a) within the cavity 101.

[0065] Further, the stop 131 can be disposed during installation of the signal processing device 120 into the cavity 101. For example, the stop 131 can be disposed between the two vertically stacked components.

[0066] Further, the stop 131 can be disposed after the signal processing device 120 is installed and before the cavity 101 is closed. For example, the stop 131 can be disposed between the signal processing device 120 furthest from the first side 112a and the cover 111.

[0067] In some embodiments, the stop 131 can be disposed between the sidewall 113 and the component 121 to limit movement of the signal processing device 120 in a plane perpendicular to the x-direction.

[0068] In some embodiments, the stop 131 can be integrally formed with the cover 111, the base 112, and / or the sidewall 113. For example, the stop 131 can include a groove or a boss machined into the cover 111.

[0069] Further, with continued reference to Figures 1 to 3 ​The implantable device 100 can further include an electrode 140 located on the outside of the body 110, i.e., on the side of the body 110 facing away from the cavity 101. For example, the electrode 140 can be disposed on the second side 112b of the substrate 112. In some embodiments, the electrode 140 can be, for example, a flexible electrode. In the present embodiment, the flexibility of the flexible electrode can be embodied in that the electrode wire 142 is a flexible structure that can be bent / folded as needed.

[0070] Further, the electrode 140 and the signal processing device 120 can be electrically connected through a feedthrough electrode 114 disposed on the body 110. For example, referring to Figure 2 The feedthrough electrode 114 can communicate the first side 112a and the second side 112b, the signal processing device 120 located on the first side 112a is electrically connected with the feedthrough electrode 114, and the electrode 140 located on the second side 112b is also electrically connected with the feedthrough electrode 114.

[0071] Further, the metal interconnection layer 130 is electrically connected with the signal processing device 120 and the feedthrough electrode 114, respectively. That is, the signal processing device 120 can indirectly electrically connect the feedthrough electrode 114 through the metal interconnection layer 130, and thus realize signal interaction with the electrode 140.

[0072] In some embodiments, the substrate 112 can be provided with a feedthrough hole 115 that penetrates the first side 112a and the second side 112b, and the feedthrough hole 115 is filled with a conductive material to form the feedthrough electrode 114.

[0073] For example, a micro-hole that penetrates the entire substrate 112 can be formed on one side of the substrate 112 (such as the second side 112b) by laser processing or etching, etc., to obtain the feedthrough hole 115. Further, a hermetically sealed welding joint can be formed between the feedthrough hole 115 and the glass feedthrough metal to obtain the feedthrough electrode 114.

[0074] In some embodiments, the diameter of the feedthrough hole 115 can be between 5 microns and 500 microns.

[0075] In some embodiments, the conductive material can be, for example, a metal material, such as the aforementioned glass feedthrough metal. In other embodiments, the conductive material can also be a metal alloy material or a non-metal material with good electrical conductivity, such as a graphite material, etc.

[0076] In some embodiments, the number of feedthrough electrodes 114 can be multiple, and the multiple feedthrough electrodes 114 can be arranged in an array on the substrate 112. When the signal processing device 120 is installed to the first side 112a, the metal solder joint 126 can be used to electrically connect the components 121 (such as the signal processing device 120) at the corresponding positions of the feedthrough hole 115 and the feedthrough electrode 114. Figure 3The flip-chip soldering is performed on the pads 127 of the first chip 125 shown in FIG. 1, so that each feedthrough electrode 114 is connected to each signal site pad 127 on the first chip 125 through the independent channel formed by the corresponding glass feedthrough metal.

[0077] In some embodiments, a metal layer can be formed on the inner wall of the feedthrough hole 115 before the conductive material is filled in the feedthrough hole 115. In this way, the formation of air bubbles / air gaps in the feedthrough electrode 114 can be better avoided, so that the feedthrough electrode 114 has better electrical connection effect and air tightness.

[0078] In some embodiments, the electrode 140 can be processed on the second side 112b by photolithography.

[0079] In some embodiments, the thickness of the substrate 112 along the x direction can be in the range of 0.4-1 mm to reliably perform the feedthrough process and / or the photolithography process. Further, the specific thickness of the substrate 112 can be related to the glass material used for the substrate 112. The substrate 112 made of glass with higher hardness can have a smaller thickness, such as less than or equal to 0.2 mm.

[0080] From the above, by using the present embodiment, the electrode 140 processed by the photolithography process is directly processed on the second side 112b of the glass wafer (such as the substrate 112), and is electrically connected to the signal processing device 120 soldered on the other side (such as the first side 112a) of the glass wafer through the glass feedthrough metal (such as the feedthrough electrode 114) on the glass wafer. At the same time, the signal processing device 120 is sealed in the cavity 101 by the sealing soldering of the glass wall (such as the side wall 113) and the glass cover (such as the cover part 111). In this way, good multi-channel electrode conduction and sealing air tightness can be achieved, and long-term stability in the implanted environment can also be achieved.

[0081] In one specific implementation, a metal interconnection layer 130 can also be provided between the electrode 140 and the second side 112b to form a signal and power path between the electrode 140 and the signal processing device 120.

[0082] In one specific implementation, the electrode 140, the feedthrough electrode 114, and the metal interconnection layer 130 can be designed in a plurality of array units in a corresponding array form, where each array unit can include Figures 1 to 3 The plurality of array units can be distributed at different positions of the substrate 112.

[0083] In one specific implementation, continuing to refer to Figure 1 and Figure 3 , the electrode 140 can include an electrode layer 141 formed and attached to the second side 112b, and an electrode wire 142 which can be peeled off from the second side 112b.

[0084] Specifically, the electrode layer 141 and the electrode wire 142 are electrically connected, and the electrode layer 141 and the feedthrough electrode 114 are electrically connected. Further, the number of the electrode wires 142 can be one or more, and each of the electrode wires 142 can have one or more electrode contacts 143. The electrode contacts 143 can serve as channels of electrode sites, and cells of a living body (e.g., a brain) into which the implantable device 100 is implanted can interact with the signal processing device 120 through the electrode contacts 143, the feedthrough electrode 114, and the metal interconnection layer 130.

[0085] For example, the end of each electrode wire 142 can be provided with an electrode contact 143, Figure 3 is a side view of the electrode contacts 143 of the plurality of electrode wires 142.

[0086] Further, the electrode 140 can include a conductive layer 144 for realizing electrical connection between the electrode layer 141 and the electrode wire 142, and between the electrode wire 142 and the electrode contact 143.

[0087] Further, the electrode 140 can further include an insulating layer 147 located on both sides of the conductive layer 144 in the x direction to serve as an insulating protective layer. For example, referring to Figure 3 , the insulating layer 147 can include a first insulating layer 145 formed between the conductive layer 144 and the second side 112b, and can further include a second insulating layer 146 formed on the side of the conductive layer 144 away from the substrate 112. Further, the adjacent electrode wires 142 can be spaced apart by the insulating layer 147 to achieve electrical isolation. That is, except for the surface in contact with the first side 112a, the other surfaces of the conductive layer 144 are substantially wrapped by the insulating layer 147 to isolate from the outside.

[0088] In some embodiments, the projection of the electrode layer 141 in the x direction falls within the boundary of the substrate 112, and at least a portion of the electrode wire 142 extends beyond the substrate 112. For example, the projection of at least the portion of the electrode wire 142 where the electrode contact 143 is formed in the x direction is located outside the substrate 112.

[0089] In some embodiments, the electrode 140 can have a tadpole shape, where the head of the tadpole can be the entire electrode layer 141, and the tail of the tadpole can be the comb-shaped electrode wire 142 extending outward from the edge of the substrate 112, as shown in Figure 4 . Figure 4 is Figure 1 a top view of an intermediate state of the implantable device 100, which can be, for example, a temporary state of the implantable device 100 in the forming process (manufacturing process).

[0090] Specifically, the coverage area of the conductive layer 144 on the substrate 112 can be determined according to the arrangement position of the feedthrough electrodes 114 on the substrate 112, so as to ensure that all the feedthrough electrodes 114 can be reliably electrically connected to the conductive layer 144.

[0091] Further, the coverage area of the insulating layer 147 on the substrate 112 can be much larger than the coverage area of the conductive layer 144 on the substrate 112. For example, referring to Figure 4 , the coverage area of the conductive layer 144 can substantially cover the area where the pads 127 and the metal interconnection layer 130 of the signal processing device 120 are located, and the insulating layer 147 can cover the entire substrate 112 to better play a protective role.

[0092] Further, for the part of the electrode filaments 142, the conductive layers 144 of adjacent electrode filaments 142 can be separated by the insulating layer 147, so as to insulate and protect each electrode filament 142.

[0093] In some embodiments, the coverage area of the insulating layer 147 on the substrate 112 can be substantially equal to the coverage area of the conductive layer 144 on the substrate 112, as shown in Figures 7 to 9 . In this example, the electrode 140 as a whole can be in the shape of a long strip, the electrode layer 141 in the shape of a long strip extends from the position of the substrate 112 where the feedthrough electrodes 114 are arranged towards the edge of the substrate 112, and the electrode filaments 142 in the shape of a long strip continue to extend from the end of the electrode layer 141 towards the outside of the body 110. Among them, Figures 7 to 9 is a schematic diagram of the forming process of the implantable device in a typical application scenario of the embodiments of the present application.

[0094] In a specific implementation, referring to Figure 4 and Figure 5 , the body 110 can include: a main body part 116, which forms the cavity 101; and an extension part 117, which extends outward from the main body part 116 and can be separated from the main body part 116. Among them, Figure 5 is a sectional view of the structure shown in Figure 4 .

[0095] Specifically, the main body part 116 can include the aforementioned cover part 111, the substrate 112, and the side wall 113, which are respectively connected to seal the cavity 101. Figure 4 and Figure 5 . The difference between the implantable device 100 in the intermediate state shown in Figures 1 to 3 and the implantable device 100 in the final state (such as the finished state) is mainly that the body 110 includes a removable extension part 117. The extension part 117 is adapted to provide a substrate for the part of the electrode 140 outside the main body part 116 during the forming process of the implantable device 100, so as to process a part (such as the electrode filament 142) of the electrode 140 on the substrate through a photolithography process.

[0096] In some embodiments, the substrate 112 and the extension 117 of the main body 116 can initially be a single piece, i.e., both are the same glass wafer. During the formation of the implantable device 100, after the electrodes 140 are processed on the substrate 112 and the extension 117 by a photolithography process, the extension 117 is separated from the substrate 112, and the extension 117 is removed from the substrate 112. Figure 4 and Figure 5 to the implantable device 100 in the final state shown in Figures 1 to 3 .

[0097] Further, the electrodes 140 can include a first portion 148 formed on the main body 116 and a second portion 149 formed on the extension 117. The first portion 148 and the second portion 149 can be prepared by the same or multiple processes, and there can be no physical boundary between the two, but they are divided by their positions on the glass wafer.

[0098] Further, the first portion 148 can include the electrode layer 141.

[0099] Further, the second portion 149 can have a comb structure to form at least one electrode filament 142.

[0100] In some embodiments, the junction of the electrode layer 141 and the electrode filament 142 can be located at the interface of the first portion 148 and the second portion 149. That is, the electrode layer 141 is entirely formed on the first portion 148, and the electrode filament 142 is entirely formed on the second portion 149.

[0101] In some embodiments, the junction of the electrode layer 141 and the electrode filament 142 can be offset from the interface of the first portion 148 and the second portion 149. For example, the junction of the electrode layer 141 and the electrode filament 142 can be located outside the substrate 112, i.e., on the second portion 149. For another example, the junction of the electrode layer 141 and the electrode filament 142 can be located inside the substrate 112, i.e., the electrode filament 142 has a portion on the substrate 112, as shown in Figure 4 .

[0102] Further, with continued reference to Figure 5 , the second portion 149 can have a gap with the extension 117 that is not zero. Thus, after the extension 117 is separated from the substrate 112, the second portion 149 can be easily separated from the extension 117, so that the electrode filament 142 is released from the glass wafer.

[0103] In one specific implementation, with continued reference to Figure 5 , the implantable device 100 can further include a sacrificial layer 150 located at least between the second portion 149 and the extension 117.

[0104] Specifically, the sacrificial layer 150 can be a connective layer that can be sacrificed for attaching the electrode wire 142 to the surface of the glass wafer, such as the surface of the extension 117.

[0105] In some embodiments, the sacrificial layer 150 can be processed in multiple layers of components, including but not limited to nickel (Ni), platinum (Pt), or palladium (Pd), etc.

[0106] Further, the sacrificial layer 150 can also be located between the first portion 148 and the main body 116. That is, the coverage area of the sacrificial layer 150 on the body 110 includes the area where the electrode wire 142 is located (i.e. the electrode area that needs to be released to be flexible) and part of the substrate 112 that does not need to be separated by glass. By making the area covered by the sacrificial layer 150 include a large enough part that does not need to be separated by glass, damage to the electrode 140 during the separation process can be avoided, and the substrate 112 can be more conveniently connected to the side wall 113.

[0107] In some embodiments, the part of the sacrificial layer 150 located between the first portion 148 and the main body 116 at least covers the part of the connection area of the main body 116 that interferes with the first portion 148. Specifically, the connection area can include the contact area of the substrate 112 and the side wall 113, and can also include the contact area of the side wall 113 and the cover 111. The connection area may, for example, be the area that the laser touches when laser welding.

[0108] For example, continuing to refer to Figure 4 and Figure 5 , the projection of the part of the sacrificial layer 150 located between the first portion 148 and the main body 116 in the first direction at least covers the overlapping area of the projection of the side wall 113 and the first portion 148 in the first direction. Wherein the first direction is parallel to the x direction. Thus, when laser welding is performed to connect the cover 111, the substrate 112, and the side wall 113 to form the sealed cavity 101, and / or when the extension 117 and the main body 116 are separated by laser cutting, the laser is irradiated from above perpendicular to the substrate 112 along the x direction, and the electrode wire 142 is bent inward (i.e. towards the substrate 112, as shown in Figure 1 by the sacrificial layer 150 located between the first portion 148 and the main body 116, so that the projection in the x direction does not fall within the area where the side wall 113 is located, avoiding the laser from cutting the electrode wire 142 by mistake.

[0109] In summary, the present embodiment can realize signal interaction between the device inside the cavity 101 and the electrode 140 outside the cavity 101 while ensuring the air tightness of the device inside the cavity 101 and the long-term stability in the implant environment. Specifically, the present embodiment provides a structure sealed by glass and having an electrode 140, which is prepared and processed on a glass substrate material to be attached to the outer surface of the glass body 110 and connected to the signal processing device 120 sealed inside the glass cavity 101 through a metal feedthrough (such as the feedthrough electrode 114) arranged inside the glass. In this way, the feedthrough sealing is realized by the integrated sealing prepared and processed on the glass substrate material, that is, the isolation between the internal environment of the glass cavity 101 and the external environment is ensured while realizing signal communication, thereby realizing the stability of long-term signal processing and the flux of signal transmission.

[0110] Further, the electrode 140 can include multi-channel electrode integration. Further, the entire body 110 is made of glass, and the single glass material composition of the main structure can reduce the long-term biocompatibility problems of different types of materials that may be introduced by the implantable device 100 as much as possible.

[0111] Further, glass has good light transmittance and good chemical stability, and therefore, the implantable device 100 made of glass in the present embodiment can better adapt to application scenarios that require sealed communication between the inside and outside of the cavity 101 to exchange data or energy for measurement or processing of information data. Further, the glass material of the body 110 makes it possible for the implantable device 100 in the present embodiment to exchange data or transmit energy through the body 110 using optical signals.

[0112] Further, glass has good thermal insulation performance, so that the implantable device 100 in the present embodiment can effectively control the heat release of the signal processing device sealed in the glass cavity 101. By allowing the heat released instantaneously in the glass cavity 101 to be released and conducted to the outside of the body 110 in a slower manner, it is beneficial to protect the implant safety.

[0113] Further, the glass material of the body 110 can be obtained by low-temperature welding. Since the low-temperature welding has little effect on the performance of the signal processing device 120, the signal processing device 120 can be installed in the cavity 101 first and then the cavity 101 is sealed by low-temperature welding. In this way, the signal processing device 120 can be installed in the cavity 101 by flip-chip process, which is beneficial to reduce the preparation complexity.

[0114] Further, the body 110 made of glass can be connected by laser welding, such as laser welding of each region of the body 110 to form the sealed cavity 101. Since laser welding does not need to introduce other kinds of materials (such as flux) to complete the welding, it is beneficial to reduce the long-term biocompatibility problems of different kinds of materials that can be introduced by the implantable device 100.

[0115] Figure 6 is a flowchart of a method for forming an implantable device according to an embodiment of the present application. The forming method can be used to form the implantable device 100 according to the embodiment shown in Figures 1 to 5 .

[0116] In particular, with reference to Figure 6 , the forming method of the implantable device according to the embodiment can include the following steps:

[0117] Step S601, providing a body adapted to provide a sealed cavity, the body being provided with a feedthrough electrode;

[0118] Step S602, forming an electrode on the outside of the body;

[0119] Step S603, sealing a signal processing device into the cavity, and electrically connecting the electrode and the signal processing device through the feedthrough electrode.

[0120] It can be understood that the steps S601 to S603 can be used to form the implantable device 100 according to the embodiment shown in Figures 1 to 5 . Thus, the explanations of the terms involved in the embodiment can refer to the related descriptions of the embodiment shown in Figures 1 to 5 , which will not be repeated here.

[0121] Further, the body 110 can be made of glass.

[0122] In a specific implementation, in combination with Figures 1 to 5 , the process of providing the feedthrough electrode 114 on the body 110 can include the steps of: providing a substrate 112 having opposite first and second sides 112a and 112b; and forming the feedthrough electrode 114 that communicates the first and second sides 112a and 112b.

[0123] In particular, the process of preparing the feedthrough electrode 114 can include the steps of: opening a feedthrough hole 115 on the substrate 112, the feedthrough hole 115 extending along the x direction and penetrating through the first and second sides 112a and 112b; and filling the feedthrough hole 115 with a conductive material to form the feedthrough electrode 114.

[0124] In one embodiment, step S603 can include the steps of: installing the signal processing device 120 to the first side 112a and electrically connecting the signal processing device 120 with the feedthrough electrode 114; providing the side wall 113 and the cover 111, and connecting the cover 111 and the substrate 112 to opposite sides of the side wall 113 respectively to form the cavity 101.

[0125] In some embodiments, the soldering process of the signal processing device 120 can include: forming a metal interconnection layer 130 on the first side 112a, and electrically connecting the signal processing device 120 with the metal interconnection layer 130.

[0126] In one embodiment, step S602 can include the steps of: forming the first portion 148 of the electrode 140 on the main body 116, and forming the second portion 149 of the electrode 140 on the extension 117, wherein the second portion 149 and the extension 117 have a gap therebetween.

[0127] The embodiment can include the following processes: s1, forming a first insulating layer 145 on the outside of the body 110. For example, forming the first insulating layer 145 on the second side 112b of the substrate 112 and the surface of the extension 117.

[0128] s2, opening a first through hole in the portion of the first insulating layer 145 on the main body 116, and the first through hole corresponds to the feedthrough electrode 114. For example, a first through hole is opened on each feedthrough electrode 114 to expose the feedthrough electrode 114 outside the first insulating layer 145.

[0129] s3, filling the first through hole with conductive material. For each first through hole, the composition of the conductive material filled in the first through hole can be the same as or different from the composition of the conductive material used in the corresponding feedthrough electrode 114, and the embodiment does not limit this as long as reliable electrical connection is ensured.

[0130] s4, forming a conductive layer 144 on the first insulating layer 145, and the conductive layer 144 communicates with the first through hole. At this time, the conductive layer 144 realizes reliable electrical connection with the feedthrough electrode 114 through the first through hole and the conductive material filled therein.

[0131] s5, forming a second insulating layer 146 on the conductive layer 144 to obtain the first portion 148 and the second portion 149.

[0132] Further, the forming of the electrode contact 143 on each electrode wire can include the following steps: opening a second via in the portion of the extension 117 where the first and / or second insulating layer 145, 146 is located, the second via communicating the conductive layer 144; filling the second via with a conductive material to form the electrode contact 143.

[0133] In some embodiments, after filling the second via with a conductive material, a plating layer can also be formed at the end of the second via to reduce the impedance when the electrode contact 143 is in contact with cells and to prolong the long-term stability of the electrode contact 143. The material of the plating layer can include iridium oxide, polyethylene dioxythiophene (PEDOT).

[0134] In one specific implementation, before step S602, the forming method described in this embodiment can further include the step of: forming a sacrificial layer 150 at least on the extension 117.

[0135] For example, the lamination process of the electrode 140 (including the electrode layer 141 and the flexible electrode wire 142 released therefrom) can be as follows: on a glass wafer substrate (including the substrate 112 and the extension 117), an internal metal conductive feed-through electrode 114 is processed; then, on the second side 112b, a sacrificial layer 150 that can be released is first formed by a micro-electro-mechanical system (MEMS) process, and then an insulating layer 147 (such as the first insulating layer 145) is formed thereon, and then an opening (such as the first via) corresponding to the electrode contact 143 is formed, and the metal of the conductive layer 144 is connected to the corresponding metal conductive hole (i.e., the feed-through electrode 114) in the glass wafer substrate; then, a layer of insulating layer 147 (such as the second insulating layer 146) is further formed, and an opening (such as the second via) corresponding to the electrode contact 143 is formed.

[0136] In some embodiments, the sacrificial layer 150 can be formed on the interference region of the main body portion 116 and the extension 117. The interference region at least covers the portion of the connection region of the main body portion 116 that interferes with the first portion 148.

[0137] In one specific implementation, after step S602, the forming method described in this embodiment can further include the steps of: removing the sacrificial layer 150; folding the second portion 149 towards the first portion 148 to at least expose the interference region of the main body portion 116, wherein the projection of the interference region in the first direction (parallel to the x direction) at least covers the overlapping region of the projection of the sidewall 113 and the first portion 148 in the first direction; and separating the extension 117 from the main body portion 116.

[0138] Specifically, a certain solution can be adopted to remove the sacrificial layer 150, and thus to separate the second portion 149 of the electrode 140 from the glass wafer substrate (including the extension 117 and the region of the main body 116 where the sacrificial layer 150 is covered). Since the joint between the main body 116 and the extension 117 is also pre-covered with the sacrificial layer 150, the second portion 149 separated from the surface of the glass wafer substrate is no longer covered on the glass section to be separated (i.e. the joint between the extension 117 and the main body 116).

[0139] Further, the extension 117 and the main body 116 can be separated by bending the glass mechanically or by laser cutting. In this way, the glass wafer substrate extension under the electrode 140 can be separated from the glass wafer substrate as the main body 116 without damaging the electrode wire 142.

[0140] In some embodiments, the operation of connecting the side wall 113 and the cover 111 to the substrate 112 can be performed after the second portion 149 is folded towards the first portion 148 to at least expose the interference region of the main body 116. In this way, the laser can be prevented from cutting into the electrode wire 142 accidentally during the welding to form the sealed cavity 101.

[0141] In some embodiments, the side wall 113 and the cover 111 can be pre-assembled to form a pre-assembled component, which is then connected to the substrate 112. In some embodiments, the side wall 113 can be connected to the substrate 112 first, and then the cover 111 is connected to the side wall 113 to seal the cavity 101.

[0142] In a typical application scenario, the formation process of the implantable device 100 can specifically include: first, providing a glass wafer substrate. The glass wafer substrate can be a whole glass wafer, on which a plurality of substrates 112 can be arrayed, each of which is connected or integrally formed with an extension 117. Then, for each substrate 112 on the glass wafer substrate, a feedthrough hole 115 is excavated on the substrate 112, and a metal material is filled therein. At this time, the feedthrough electrode 114 can be prepared. Next, a metal interconnection layer 130 is formed on the first side 112a of the substrate 112.

[0143] Next, the electrode 140 is formed on the second side 112b of the substrate 112 and the surface of the extension 117, as shown in FIG. 1C. At this time, the sacrificial layer 150 is pre-formed between the second portion 149 and the extension 117, and between the first portion 148 and the second side 112b. The prepared electrode 140 and the feedthrough electrode 114 are electrically connected. During the glass wafer processing stage, the electrode 140 is in a suction connection state with the substrate 112 / extension 117. Figure 7 ​

[0144] Next, the first side 112a of the substrate 112 is faced upward, and the signal processing device 120 is soldered to the first side 112a by means of a flip-chip process. At this time, the signal processing device 120 and the electrode contact 143 are electrically connected through the metal interconnection layer 130, the feedthrough electrode 114, and the conductive layer 144.

[0145] Next, the glass wafer substrate is cut along the boundary profile containing the extension 117 into a single unit, obtaining a structure as shown in FIG. 10. Figure 7 The extension 117 is not shown. Figure 7 The sacrificial layer 150 is not shown.

[0146] Next, the sacrificial layer 150 is removed, and the electrode wire 142 is bent so that its projection in the x direction does not fall into the interference region. For example, the sacrificial layer 150 prepared by means of photolithography under the electrode wire 142 can be removed by chemical means, so that the flexible electrode wire 142 is released from the glass wafer substrate (such as the extension 117), as shown in FIG. 11. Figure 8

[0147] Next, the electrode wire 142 is kept bent so that its projection in the x direction does not fall into the interference region, and the side wall 113 and the cover 111 are respectively laser-welded to the first side 112a of the substrate 112. At this time, the signal processing chip 120 is sealed in the cavity 101.

[0148] Finally, the extension 117 of the glass wafer substrate is cut off at the corresponding position (i.e., the junction of the extension 117 and the main body 116) where the electrode wire 142 is located, while the electrode wire 142 is kept bent so that its projection in the x direction does not fall into the interference region, as shown in FIG. 12. At this time, the final state of the implantable device 100 as shown in FIG. 13 can be obtained. Figure 9 Figure 1

[0149] In a variant, the side wall 113 and the cover 111 can be first laser-welded to the first side 112a, and then the entire main body 116 and the extension 117 are cut off from the glass wafer substrate, obtaining an intermediate state as shown in FIG. 14. Figure 5

[0150] In a specific implementation, after the signal processing device 120 is installed on the first side 112a and before the cavity 101 is sealed, the forming method described in the embodiment can further include the step of: providing a limiting part 131 in the cavity 101 to limit the movement of the signal processing device 120 in the cavity 101.

[0151] ​​​​From the above, the forming method provided by the embodiment seals the signal processing device 120 in the cavity 101 formed by a single glass material component, forms the electrode 140 outside the body 110, and sets the feedthrough electrode 114 on the body 110 forming the cavity 101 to ensure the electrical connection between the signal processing device 120 inside the cavity 101 and the electrode 140 outside. In this way, the signal interaction between the device inside the cavity 101 and the electrode 140 outside can be realized while ensuring the air tightness of the device inside the cavity 101 and the long-term stability in the implanted environment.

[0152] In one variation, referring to Figure 10 , the electrical connector 122 can include a plug-in connector arranged on the side of each of the adjacent two layers of structures facing each other. The two plug-in connectors arranged opposite to each other are coupled to achieve electrical connection between the adjacent two layers of structures.

[0153] It is assumed Figure 10 The signal processing device 120 shown includes a second chip 128 and a third PCB 129, and one or more chips can be integrated on the third PCB 129. The second chip 128 is closer to the first side 112a than the third PCB 129. Correspondingly, on the first side 112a of the substrate 112, the second chip 128 is directly electrically connected to the metal interconnection layer 130 through the solder pad 127 and the metal solder joint 126. Further, the electrical connection between the third PCB 129 and the metal interconnection layer 130 and / or the second chip 128 can be achieved through the plug-in connectors connected to the metal interconnection layer 130 and the plug-in connectors mounted on the corresponding positions of the third PCB 129.

[0154] Further, a plurality of plug-in connectors of the same height can be mounted between the adjacent two layers of structures to ensure the parallel placement and insulation isolation of the lower layer structure (such as Figure 10 The third PCB 129 shown). Figure 10 In the embodiment shown, two groups of plug-in connectors are exemplarily shown, and in actual application, the specific number and setting position can be adjusted as needed.

[0155] Further, Figure 10 The structure shown is different from the structure shown in Figure 5 The difference is that the limiting part 131 can be cancelled. Specifically, the plug-in connector has relatively large hardness, and thus the limiting structures such as the pad 133 and the support connection 132 can be cancelled, and the plug-in connector plays the role of the electrical connector 122 and the limiting part 131 at the same time through the cooperation between the plug-in connectors.

[0156] In one common variation of the above embodiments, the number of electrodes 140 can be multiple and distributed in different regions on the outer side of the body 110. Specifically, during the preparation of the electrodes 140, through a suitable patterned mask and corresponding photolithography process, multiple electrodes 140 can be prepared simultaneously / subsequently in different regions on the outer side of the body 110.

[0157] Further, the multiple electrodes 140 can be formed on the same side of the outer side of the body 110. For example, referring to Figure 11 The multiple electrodes 140 can be dispersedly arranged on the second side 112b of the substrate 112. Further, in a plane perpendicular to the x direction, the electrode filaments 142 of each electrode 140 extend in different directions, so that after the implantable device 100 is implanted into a living body, it can be connected to cells in different regions of the living body (such as the brain), which is conducive to improving the types and contents of information exchange between the brain and the device.

[0158] Further, the multiple electrodes 140 can be directly or indirectly electrically connected to the signal processing device 120 through the feedthrough electrodes 114. Directly can mean that the region on the body 110 where the electrode 140 is located is provided with a feedthrough electrode 114 corresponding to the electrode 140 to electrically connect the electrode 140 and the signal processing device 120. Indirectly can mean that the region on the body 110 where the electrode 140 is located is not provided with a corresponding feedthrough electrode 114, and the electrode 140 is indirectly electrically connected to the signal processing device 120 through the feedthrough electrode 114 provided corresponding to the other electrode 140 through the electrical connection with the other electrode 140.

[0159] In some embodiments, for each electrode 140, the substrate 112 forms a feedthrough electrode 114 in the region where the electrode 140 is arranged. Thus, each electrode 140 can be directly electrically connected to the signal processing device 120 through the corresponding feedthrough electrode 114.

[0160] In some embodiments, for the multiple electrodes 140 distributed in different regions on the outer side of the body 110, not all of the electrodes 140 can be directly electrically connected to the signal processing device 120 through the feedthrough electrodes 114.

[0161] Specifically, among the multiple electrodes 140, in addition to the part of the electrodes 140 (denoted as the second electrode group) that are directly electrically connected to the signal processing device 120 through the feedthrough electrodes 114, there can also be a part of the electrodes 140 (denoted as the first electrode group) that are indirectly electrically connected to the signal processing device 120 through the feedthrough electrodes 114 connected by the second electrode group. Further, the electrodes 140 in the first electrode group are electrically connected to each other, the first electrode group and the second electrode group are electrically connected, and the electrodes 140 in the second electrode group are electrically connected to the signal processing device 120 through the feedthrough electrodes 114.

[0162] For example,Figure 11 The three electrodes 140 shown are taken as an example, for the convenience of description, Figure 11 The three electrodes 140 shown are taken as an example, for the convenience of description, Figure 11 The three electrodes 140 shown are taken as an example, for the convenience of description,

[0163] In the embodiment, at least one electrode 140 of the plurality of electrodes 140 can be electrically connected with the remaining electrodes 140, and is electrically connected with the signal processing device 120 through the feedthrough electrodes 114 via the remaining electrodes 140. Thus, the number of the feedthrough electrodes 114 needed to be arranged on the body 110 can be reduced. Further, by adjusting the positions of the electrodes 140 within the same electrode group, the layout complexity on the substrate 112 can be further reduced.

[0164] Further, the number of the electrodes 140 in the second electrode group can be greater than or equal to two, and at least one electrode 140 is not electrically connected with the remaining electrodes 140. That is, since the electrodes 140 in the second electrode group can be directly electrically connected with the signal processing device 120 through the corresponding feedthrough electrodes 114, the electrodes 140 in the second electrode group can be completely independent from each other. Thus, each electrode 140 can independently realize the information exchange function, which is beneficial to reduce the signal interference.

[0165] In a variant, the plurality of electrodes 140 can be formed on different surfaces of the outer side of the body 110. For example, a part of the plurality of electrodes 140 can be formed on the second side 112b of the substrate 112, and the remaining part can be formed on the side of the cover plate 111 away from the cavity 101.

[0166] Although the present application has been disclosed as above, the present application is not limited to this. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, and the protection scope of the present application should be defined by the scope of the claims.

Claims

1. An implantable device, characterized by The implantable device comprises: a body having a sealed cavity; a signal processing device accommodated in the cavity; an electrode located outside the body, the electrode being electrically connected with the signal processing device through a feedthrough electrode provided on the body; wherein the body comprises: a main body portion forming the cavity; and an extension portion extending outwardly from the main body portion and separable from the main body portion; the electrode comprises: a first portion formed on the main body portion; and a second portion formed on the extension portion, the second portion having a non-zero gap with the extension portion; the implantable device further comprises: a sacrificial layer located at least between the second portion and the extension portion, the sacrificial layer being further located between the first portion and the main body portion, and a portion of the sacrificial layer between the first portion and the main body portion covering at least a portion of the main body portion interfering with the first portion.

2. The implantable device of claim 1, wherein, The body is made of glass or ceramic.

3. An implantable device according to claim 1 or 2, c h a r a c t e r i z e d in that The electrode is a flexible electrode.

4. The implantable device of claim 1 or 2, wherein, The body comprises: a cover portion and a substrate portion oppositely arranged, and a side wall located between the cover portion and the substrate portion, the cover portion, the substrate portion and the side wall collectively forming the cavity.

5. The implantable device of claim 4, wherein, The substrate portion has a first side facing the cover portion and an opposite second side, the feedthrough electrode communicating the first side and the second side, the signal processing device being located on the first side and electrically connected with the feedthrough electrode, and the electrode being located on the second side and electrically connected with the feedthrough electrode.

6. The implantable device of claim 5, wherein, Further comprising: a metal interconnection layer located between the signal processing device and the first side, the metal interconnection layer being electrically connected with the signal processing device and the feedthrough electrode respectively.

7. The implantable device of claim 5, wherein, The substrate portion is provided with a feedthrough hole penetrating through the first side and the second side, and the feedthrough hole is filled with a conductive material to form the feedthrough electrode.

8. The implantable device of claim 1, wherein, The first portion comprises an electrode layer, and / or the second portion has a comb structure to form at least one electrode wire, each electrode wire comprising an electrode contact.

9. The implantable device of claim 1, wherein, The main body portion comprises: a cover portion and a substrate portion oppositely arranged, and a side wall located between the cover portion and the substrate portion, the cover portion, the substrate portion and the side wall collectively forming the cavity, wherein a projection of the portion of the sacrificial layer between the first portion and the main body portion in a first direction covers at least an overlapping region of the side wall and a projection of the first portion in the first direction, the first direction being parallel to a direction in which the cover portion points to the substrate portion.

10. The implantable device of claim 1 or 2, wherein, Further comprising: a limiting portion provided in the cavity, the limiting portion being used to limit movement of the signal processing device in the cavity.

11. The implantable device of claim 1 or 2, wherein, The signal processing device comprises a multi-layer structure, and each layer structure is electrically connected with each other through an electrical connector.

12. The implantable device of claim 1 or 2, wherein, The number of the electrodes is plural and distributed in different regions outside the body, and the plural electrodes are directly or indirectly electrically connected with the signal processing device through the feedthrough electrode.

13. The implantable device of claim 12, wherein, At least one electrode of the plural electrodes is electrically connected with the remaining electrodes, and the at least one electrode is electrically connected with the signal processing device through the remaining electrodes via the feedthrough electrode.

14. The implantable device of claim 13, wherein, The plurality of electrodes includes a first electrode group and a second electrode group, the electrodes in the first electrode group are electrically connected to each other, the first electrode group and the second electrode group are electrically connected, and the electrodes in the second electrode group are electrically connected to the signal processing device through the feedthrough electrode.

15. The implantable device of claim 14, wherein, The number of electrodes in the second electrode group is greater than or equal to two, and at least one electrode is not electrically connected to the remaining electrodes.

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