Temperature determining device

Abstract

The temperature determination device provided in this application includes a microelectromechanical system (MEMS) resonator, an oscillation circuit, a coupling unit, and a temperature determination unit. The MEMS resonator, oscillation circuit, and temperature determination unit are all electrically connected to the coupling unit. This application does not directly measure the temperature; instead, it acquires the coupling value and obtains the real-time temperature of the MEMS oscillator based on the correspondence between the coupling value and the temperature. Therefore, using the temperature determination device provided in this application to measure the temperature of the MEMS oscillator is not only simple, fast, and efficient, but also highly accurate, thereby achieving high-precision temperature measurement and compensating for frequency deviations caused by temperature variations in the MEMS oscillator, ultimately outputting a signal with the desired frequency.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems (MEMS) technology, and more specifically to a temperature determination device. Background Technology

[0002] Crystal oscillators, as one of the important components of electronic systems, have a wide range of applications. Frequency, clock jitter, and power consumption are the main parameters for evaluating the performance of a crystal oscillator. Micro-Electro-Mechanical System (MEMS) oscillators, with their advantages of small size, high shock resistance, and no start-up problems, have become a replacement technology for crystal oscillators.

[0003] Compared to quartz crystal oscillators, MEMS oscillators are fabricated using silicon processes. Silicon has a highly negative temperature coefficient of elasticity (TCE), meaning the resonant frequency of a MEMS oscillator is strongly correlated with temperature, resulting in a large temperature coefficient of frequency (TCF). Therefore, measurement discrepancies caused by temperature variations are one of the major challenges faced by MEMS oscillators.

[0004] Researchers have attempted to use various techniques to reduce the impact of temperature on output frequency, employing temperature compensation. These techniques can be broadly categorized into passive and active compensation. Passive compensation involves fabricating microelectromechanical system (MEMS) oscillators using materials with different temperature coefficients, and using different doping materials or concentrations to reduce temperature dependence. Active compensation, on the other hand, involves applying a controlled voltage to the MEMS oscillator based on the current temperature to alter the physical properties of its structure, ultimately compensating for the oscillator's resonant frequency. While active compensation can achieve a wider temperature compensation range, it requires high-precision temperature measurement. However, existing MEMS oscillators suffer from low temperature measurement efficiency and high power consumption, hindering the achievement of high-precision temperature measurements.

[0005] Therefore, how to achieve high-precision temperature measurement to improve the effect of temperature compensation is a problem that existing MEMS oscillator manufacturers urgently need to solve. Summary of the Invention

[0006] This application provides a temperature determination device that can achieve high-precision temperature measurement to improve the effect of temperature compensation.

[0007] In a first aspect, this application provides a temperature determining device, comprising:

[0008] Microelectromechanical system resonator, used to output the first frequency;

[0009] An oscillation circuit is used to output a second frequency, and the oscillation circuit has a different temperature coefficient from the microelectromechanical system resonator.

[0010] A coupling unit is electrically connected to the microelectromechanical system resonator and the oscillation circuit, respectively. The coupling unit is used to receive the first frequency and the second frequency, and couple the first frequency and the second frequency to obtain the coupling value of the first frequency and the second frequency. The coupling value is proportional to the temperature of the microelectromechanical system oscillator.

[0011] A temperature determination unit is electrically connected to the coupling unit. The temperature determination unit is used to receive the coupling value and determine the temperature of the microelectromechanical system oscillator based on the coupling value.

[0012] In the temperature determination device provided in the embodiments of this application, the coupling value is obtained based on the ratio, sum, or difference between the second frequency and the first frequency.

[0013] The temperature determination device provided in this application embodiment further includes a storage unit, which is electrically connected to the temperature determination unit and is used to store the correspondence between the coupling value and the temperature.

[0014] The temperature determination device provided in this application embodiment further includes an output unit, which is electrically connected to the temperature determination unit and is used to obtain and output the temperature data of the microelectromechanical system resonator from the temperature determination unit.

[0015] In the temperature determination device provided in the embodiments of this application, the microelectromechanical system resonator includes an electrically connected microelectromechanical system die and a complementary metal-oxide-semiconductor die.

[0016] In the temperature determination device provided in the embodiments of this application, the complementary metal oxide semiconductor die is provided with a plurality of first contacts, and the microelectromechanical system die is provided with a plurality of second contacts. The first contacts and the second contacts are correspondingly arranged, and the first contacts and the corresponding second contacts are bonded or soldered by metal leads.

[0017] In the temperature determination device provided in the embodiments of this application, the microelectromechanical system die and the complementary metal-oxide-semiconductor die are stacked, arranged side by side, or staggered.

[0018] In the temperature determination device provided in the embodiments of this application, the oscillation circuit, the coupling unit, and the temperature determination unit are integrated on the microelectromechanical system die and / or the complementary metal-oxide-semiconductor die.

[0019] In the temperature determination device provided in the embodiments of this application, the microelectromechanical system die includes a working area and a non-working area, and the working area is provided with a resonator.

[0020] In the temperature determination device provided in the embodiments of this application, the oscillation circuit includes a capacitor, an inductor, and an oscillation control circuit. The capacitor and the inductor are both electrically connected to the oscillator circuit, and the capacitor and / or the inductor are located in the non-working area.

[0021] The temperature determination device provided in this application includes a microelectromechanical system (MEMS) resonator, an oscillation circuit, a coupling unit, and a temperature determination unit. The MEMS resonator, oscillation circuit, and temperature determination unit are all electrically connected to the coupling unit. In this embodiment, the coupling unit first calculates the coupling value between the first frequency output by the MEMS resonator and the second frequency output by the oscillation circuit. Then, the temperature determination unit obtains the real-time temperature of the MEMS oscillator based on the coupling value. This embodiment does not directly measure the temperature; instead, it obtains the coupling value and uses the correspondence between the coupling value and the temperature to obtain the real-time temperature of the MEMS oscillator. Therefore, using the temperature determination device provided in this embodiment to measure the temperature of the MEMS oscillator is not only simple, fast, and efficient, but also highly accurate, enabling high-precision temperature measurement and compensation for frequency deviations caused by temperature variations in the MEMS oscillator, thereby outputting a signal with the desired frequency. Attached Figure Description

[0022] Figure 1 This is a first structural schematic diagram of the temperature determination device provided in an embodiment of this application.

[0023] Figure 2 A first temperature coefficient diagram of the temperature determining device provided in the embodiments of this application;

[0024] Figure 3 A second temperature coefficient diagram for the temperature determination device provided in the embodiments of this application;

[0025] Figure 4 This is a second structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0026] Figure 5 This is a third structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0027] Figure 6 This is a fourth structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0028] Figure 7 This is a fifth structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0029] Figure 8 This is a sixth structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0030] Figure 9 This is a seventh structural schematic diagram of the temperature determination device provided in the embodiments of this application;

[0031] Figure 10 This is an eighth structural schematic diagram of the temperature determination device provided in the embodiments of this application. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0033] In the description of this application, it should be understood that the terms "length," "width," "thickness," "upper," and "lower," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, in the description of this application, "inner" and "outer" refer to the outline of the device. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0034] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" and "second," etc., may explicitly or implicitly include one or more of the stated features, and thus should not be construed as limiting this application.

[0035] Please see Figure 1 , Figure 1 This is a first structural schematic diagram of a temperature determining device provided in an embodiment of this application. Figure 1 As shown, the temperature determination device 1 provided in this embodiment includes a microelectromechanical system (MEMS) resonator 10, an oscillation circuit 11, a coupling unit 12, and a temperature determination unit 13. The MEMS resonator 10, the oscillation circuit 11, and the temperature determination unit 13 are all electrically connected to the coupling unit 12.

[0036] It should be noted that the microelectromechanical system (MEMS) resonator 10 is used to output a first frequency f1. The oscillation circuit 11 is used to output a second frequency f2. The coupling unit 12 is used to receive the first frequency f1 and the second frequency f2, and couple the first frequency f1 and the second frequency f2 to obtain a coupling value f3. The temperature determination unit 13 is used to receive the coupling value f3 and determine the temperature of the MEMS oscillator based on the coupling value f3. The coupling value f3 is proportional to the temperature T of the MEMS oscillator.

[0037] In this embodiment, the coupling value f2 between the first frequency f1 output by the microelectromechanical system (MEMS) resonator 10 and the second frequency f2 output by the oscillation circuit 11 is first calculated by the coupling unit 12. The real-time temperature of the MEMS oscillator is then obtained by the temperature determination unit 13 based on the coupling value f3. It should be noted that this embodiment does not directly measure the temperature; instead, it obtains the coupling value and uses the correspondence between the coupling value and temperature to determine the real-time temperature of the MEMS oscillator. Therefore, using the temperature determination device provided in this embodiment to measure the temperature of the MEMS oscillator is not only simple, fast, and efficient, but also highly accurate, enabling high-precision temperature measurement and compensation for frequency deviations caused by temperature variations in the MEMS oscillator, thereby outputting a signal with the desired frequency.

[0038] It should be noted that the coupling value f3 can be obtained in various ways, but the relationship between the coupling value f3 and temperature will be different depending on the method used.

[0039] First, during the coupling period of coupling unit 30, the ratio of the second frequency f2 to the first frequency f1 is used as the coupling value f3, i.e., coupling value f3 = f2 / f1. Second, during the coupling period of coupling unit 30, the ratio of the first frequency f1 to the second frequency f2 is used as the coupling value f3, i.e., coupling value f3 = f1 / f2. Third, during the coupling period of coupling unit 30, the ratio of the second frequency f2 to the sum of the two frequencies is used as the coupling value f3, and the sum of the first frequency f1 and the second frequency f2 is used as the coupling value f3, i.e., coupling value f3 = f2 / (f1+f2). Fourth, during the coupling period of coupling unit 30, the difference between the second frequency f2 and the first frequency f1 is used as the coupling value f3, i.e., coupling value f3 = (f2-f1). Fifth, during the coupling period of coupling unit 30, the difference between the first frequency f1 and the second frequency f2 is used as the coupling value f3, i.e., coupling value f3 = (f1-f2). Sixth, during the coupling period of the coupling unit 30, the sum of the first frequency f1 and the second frequency f2 is used as the coupling value f3, that is, the coupling value f3 = (f1 + f2).

[0040] It should be noted that, in this embodiment of the application, the oscillation circuit 11 may be an LC oscillation circuit.

[0041] Please see Figure 2 as well as Figure 3 , Figure 2 A first temperature coefficient diagram for the temperature determination device provided in the embodiments of this application. Figure 3 A second temperature coefficient diagram for the temperature determination device provided in the embodiments of this application. For example... Figure 2 as well as Figure 3 As shown, in the temperature determination device 1 provided in this application embodiment, the microelectromechanical system resonator 10 and the oscillation circuit 11 have different temperature coefficients.

[0042] It should be noted that the microelectromechanical system (MEMS) oscillator includes a MEMS resonator 10 and an oscillation circuit 11, both of which can affect the temperature of the MEMS oscillator. Since the MEMS resonator 10 and the oscillation circuit 11 have different temperature coefficients, it is necessary to obtain the correspondence between the coupling value f3 and the temperature in advance to obtain the real-time temperature of the MEMS oscillator.

[0043] The relationship between the coupling value f3 and the temperature can be obtained from experimental data before the temperature of the microelectromechanical system oscillator is detected in real time.

[0044] Firstly, the temperature determining device 1 provided in this application embodiment can be placed in a temperature-measurable environment. Then, multiple sets of first frequencies f1 and second frequencies f2 are acquired, and coupling values ​​f3 are obtained. This yields multiple coordinate points corresponding to the coupling values ​​f3 and the temperatures, which can then form a lookup table. When the temperature of the microelectromechanical system (MEMS) oscillator is detected in real time, the lookup table can be used to find the temperature value corresponding to the real-time coupling value f3. This temperature value is the real-time temperature of the MEMS oscillator.

[0045] Secondly, the temperature determining device 1 provided in this application embodiment can be placed in a temperature-measurable environment, and then multiple sets of first frequencies f1 and second frequencies f2 can be acquired, and coupling values ​​f3 can be obtained, thereby obtaining multiple coordinate points corresponding to the coupling values ​​f3 and the temperature. Then, polynomial fitting calculations are performed based on the multiple coordinate points to obtain a line corresponding to the coupling value f3 and the temperature, i.e., as shown in the figure. Figure 3 The diagonal line shown. When monitoring the temperature of the microelectromechanical system (MEMS) oscillator in real time, the real-time coupling value f3 can be directly substituted into the equation of this diagonal line, and the obtained value is the real-time temperature of the MEMS oscillator.

[0046] Thirdly, a polynomial fitting calculation can be performed based on the temperature coefficients of the microelectromechanical system resonator 10 and the oscillation circuit 11 to obtain a curve corresponding to the coupling value f3 and the temperature, i.e., as shown below. Figure 3 The diagonal line shown. When monitoring the temperature of the microelectromechanical system (MEMS) oscillator in real time, the real-time coupling value f3 can be directly substituted into the equation of this diagonal line, and the obtained value is the real-time temperature of the MEMS oscillator.

[0047] It should be noted that the temperature coefficient of the microelectromechanical system (MEMS) resonator 10 differs significantly from that of the oscillation circuit 11. Specifically, the first frequency f1 output by the MEMS resonator 10 varies with temperature from 0.9 to 1.1 ppm / ℃, meaning the temperature coefficient of the MEMS resonator 10 is 0.9–1.1 ppm / ℃. More specifically, the temperature coefficient of the MEMS resonator 10 is 0.9 ppm / ℃, 0.95 ppm / ℃, 1.0 ppm / ℃, or 1.1 ppm / ℃. The second frequency f2 output by the oscillation circuit 11 varies with temperature from 95 to 105 ppm / ℃, meaning the temperature coefficient of the oscillation circuit 11 is 95–105 ppm / ℃. More specifically, the temperature coefficient of the oscillation circuit 11 is 95 ppm / ℃, 97 ppm / ℃, 100 ppm / ℃, or 105 ppm / ℃.

[0048] Please see Figure 4 , Figure 4 This is a second structural schematic diagram of the temperature determining device provided in an embodiment of this application. Figure 4 As shown, Figure 4 The temperature determining device 1 shown is... Figure 1 The difference of the temperature determination device 1 shown is that the temperature determination device 1 provided in this application embodiment also includes a storage unit 14, which is used to store the correspondence between the coupling value f3 and the temperature.

[0049] It should be noted that the relationship between the coupling value f3 and the temperature is obtained from experimental data before the real-time temperature detection of the microelectromechanical system oscillator. The relationship between the coupling value f3 and the temperature is stored in the storage unit 14 in advance. When the temperature determination device 1 provided in this application embodiment is used to measure the real-time temperature of the microelectromechanical system oscillator, the real-time temperature of the microelectromechanical system oscillator can be obtained directly based on the coupling value f3, thereby improving the temperature detection rate.

[0050] Please see Figure 5 , Figure 5 This is a third structural schematic diagram of the temperature determination device provided in an embodiment of this application. (See attached diagram.) Figure 5 As shown, Figure 5 The temperature determining device 1 shown is... Figure 1The difference in the temperature determination device 1 shown is that the temperature determination device 1 provided in this application embodiment further includes an output unit 15, which is electrically connected to the temperature determination unit 13. The output unit 15 is used to acquire and output the temperature data of the microelectromechanical system resonator from the temperature determination unit 13.

[0051] It should be noted that the output unit 15 outputs the temperature data of the microelectromechanical system (MEMS) resonator to the subsequent logic circuit. This facilitates the use of the temperature data to output a highly accurate temperature signal. Compensation based on this highly accurate temperature signal provides better results and helps output a signal with the desired frequency. Therefore, it is possible to compensate for frequency deviations in the MEMS oscillator caused by temperature variations.

[0052] Please see Figure 6 , Figure 6 This is a fourth structural schematic diagram of the temperature determination device provided in an embodiment of this application. Figure 6 As shown, in the temperature determination device 1 provided in this embodiment, the microelectromechanical system (MEMS) resonator 10 includes a MEMS die 101 and a complementary metal-oxide-semiconductor (CMOS) die 102. The MEMS die 101 and the CMOS die 102 are electrically connected. The oscillation circuit 11 includes a capacitor 111, an inductor 112, and an oscillation control circuit 113. Both the capacitor 111 and the inductor 112 are electrically connected to the oscillation control circuit 113. The MEMS die 101 integrates the resonator 1011 and the capacitor 111. The CMOS die 102 integrates an oscillator circuit 1021, an inductor 112, an oscillation control circuit 113, a coupling unit 12, a temperature determination unit 13, and an output unit 15.

[0053] It should be noted that the oscillation control circuit 113 is used to control the output of capacitor 111 and inductor 112 to a second frequency f2 that is related to temperature.

[0054] The oscillation circuit 11, coupling unit 12, and temperature determination unit 13 are integrated on the microelectromechanical system (MEMS) die 101 and / or complementary metal-oxide-semiconductor (CMOS) die 102. Specifically, some components of the coupling unit 12, temperature determination unit 13, output unit 15, and oscillation circuit 11 are integrated on the CMOS die 102, while some components of the oscillation circuit 11 are integrated on the MEMS die 101. This embodiment integrates the various modules of the temperature determination device 1, thereby effectively reducing the size of the temperature determination device 1. This allows the temperature determination device 1 to be used in confined spaces, improving its versatility and facilitating temperature measurement.

[0055] It should be noted that some components of the oscillation circuit 11 located on the microelectromechanical system (MEMS) die 101 can not only be fabricated separately and integrated onto the MEMS die 101 by adhesion, but can also be directly formed on the MEMS die 101 using MEMS processes such as photolithography and stripping.

[0056] Please see Figure 7 , Figure 7 This is a fifth structural schematic diagram of the temperature determining device provided in an embodiment of this application. Figure 7 As shown, in the temperature determination device 1 provided in this application embodiment, a resonator 1011 and an inductor 112 are integrated on the microelectromechanical system die 101. An oscillator circuit 1021, a capacitor 111, an oscillation control circuit 113, a coupling unit 12, a temperature determination unit 13, and an output unit 15 are integrated on the complementary metal-oxide-semiconductor die 102.

[0057] In this embodiment, the coupling unit 12, the temperature determination unit 13, the output unit 15, and some components of the oscillation circuit 11 are integrated on the metal oxide semiconductor die 102, and some components of the oscillation circuit 11 are integrated on the microelectromechanical system die 101. The various modules of the temperature determination device 1 are integrated together, thereby effectively reducing the volume of the temperature determination device 1, so that the temperature determination device 1 can be used in narrow spaces, improving the versatility of the temperature determination device 1, and facilitating temperature measurement using the temperature determination device 1.

[0058] Please see Figure 8 , Figure 8 This is a sixth structural schematic diagram of the temperature determining device provided in an embodiment of this application. Figure 8 As shown, in the temperature determination device 1 provided in this embodiment, a resonator 1011, a capacitor 111, and an inductor 112 are integrated on the microelectromechanical system die 101. An oscillator circuit 1021, an oscillation control circuit 113, a coupling unit 12, a temperature determination unit 13, and an output unit 15 are integrated on the complementary metal-oxide-semiconductor die 102. The capacitor 111 and the inductor 112 are electrically connected...

[0059] In this embodiment, the coupling unit 12, the temperature determination unit 13, the output unit 15, and some components of the oscillation circuit 11 are integrated on the metal oxide semiconductor die 102, and some components of the oscillation circuit 11 are integrated on the microelectromechanical system die 101. The various modules of the temperature determination device 1 are integrated together, thereby effectively reducing the volume of the temperature determination device 1, so that the temperature determination device 1 can be used in narrow spaces, improving the versatility of the temperature determination device 1, and facilitating temperature measurement using the temperature determination device 1.

[0060] The oscillation control circuit 113 is used to control the output of the capacitor 111 and the inductor 112 to be temperature-dependent second frequency f2. Therefore, integrating the capacitor 111 and the inductor 112 on the same die facilitates the electrical connection between the capacitor 111 and the inductor 112, which helps the oscillation circuit 11 to output a stable second frequency f2.

[0061] Please see Figure 9 , Figure 9 This is a seventh structural schematic diagram of the temperature determination device provided in an embodiment of this application. Figure 9 As shown, in the temperature determination device 1 provided in this application embodiment, a plurality of first contacts 1022 are provided on the complementary metal oxide semiconductor die 102, and a plurality of second contacts 1012 are provided on the microelectromechanical system die 101. The first contacts 1022 and the second contacts 1012 are correspondingly arranged, and the first contacts 1022 and the second contacts 1012 are bonded by metal leads so that the components on the microelectromechanical system die 101 are electrically connected to the components on the complementary metal oxide semiconductor die 102, thereby enabling the microelectromechanical system resonator 10 to work normally and stably output the first frequency f1.

[0062] The first contact 1022 is located on the side of the complementary metal-oxide-semiconductor die 102 closest to the microelectromechanical system die 101. The first contact 1022 is arranged in a regular pattern, which facilitates signal transmission. Of course, the first contact 1022 can also be arranged irregularly. The specific arrangement of the first contact 1022 is determined by the specific requirements of the temperature determination device 1 provided in this application embodiment, and is not specifically limited here.

[0063] The microelectromechanical system (MEMS) die 101 is hollow and contains multiple resonators 1011 for oscillation. The complementary metal-oxide-semiconductor (CMOS) die 102 contains various transistor-based oscillator circuits 1021. These include control circuits for controlling the operation of the resonators 1011 on the MEMS die 101, various types of digital circuits, phase-locked loops (PLLs), and clock dividers.

[0064] The microelectromechanical system (MEMS) die 101 includes a working area and a non-working area, with the resonator 1011 disposed in the working area. Alternatively, the MEMS die 101 may also include circuit elements, as long as these other circuit elements are disposed in the non-working area.

[0065] In this embodiment, the first contact 1022 and the corresponding second contact 1012 are bonded together via metal wire bonding. It should be noted that the metal wire used for wire bonding can be gold wire, copper wire, or other metal conductors capable of electrical connection. In other words, as long as the metal wire enables the first contact 1022 and the second contact 1012 to achieve electrical connection, the temperature determining device 1 provided in this application embodiment is not specifically limited.

[0066] In this embodiment, the microelectromechanical system (MEMS) die 101 and the complementary metal-oxide-semiconductor (CMOS) die 102 are stacked. It should be noted that this arrangement facilitates electrical connection between the first contact 1022 and the second contact 1012, avoids metal lead tangling, and enables good signal transmission. Of course, the MEMS die 101 and the CMOS die 102 can also be arranged side-by-side or interleaved; the temperature determination device 1 provided in this application embodiment is not specifically limited in this regard.

[0067] It should be noted that when the microelectromechanical system die 101 and the complementary metal-oxide-semiconductor die 102 are stacked, the microelectromechanical system die 101 and the complementary metal-oxide-semiconductor die 102 can be stacked together by bonding or soldering.

[0068] The microelectromechanical system (MEMS) die 101 is located at the center of the complementary metal-oxide-semiconductor (CMOS) die 102. It should be noted that since the MEMS die 101 and the CMOS die 102 are electrically connected via metal wire bonding, and the MEMS die 101 is located above the CMOS die 102, with metal wires on both its left and right sides, this arrangement provides sufficient space for the metal wires, preventing wire clutter and ensuring good signal transmission.

[0069] In this configuration, a ground layer 16 is provided on the side of the microelectromechanical system die 101 that is away from the complementary metal-oxide-semiconductor die 102. A silicon nitride layer 17 is provided on the side of the ground layer 16 that is away from the complementary metal-oxide-semiconductor die 102. A capacitor 111 is provided on the side of the silicon nitride layer 17 that is away from the complementary metal-oxide-semiconductor die 102.

[0070] It should be noted that the side of the microelectromechanical system die 101 away from the complementary metal-oxide-semiconductor die 102 is the non-working area of ​​the microelectromechanical system die 101. Therefore, the aforementioned circuit elements can be disposed on the microelectromechanical system die 101.

[0071] The silicon nitride layer 17 has a first groove, and the second contact 1012 is located on the side of the first groove and the capacitor 111 away from the complementary metal-oxide-semiconductor die 102. It should be noted that the above arrangement is to facilitate the connection of the inductor 112 and the vibration control circuit 113 disposed on the complementary metal-oxide-semiconductor die 102 with the capacitor 111, thereby forming an oscillation circuit 11.

[0072] Please see Figure 10 , Figure 10 This is an eighth structural schematic diagram of the temperature determination device provided in an embodiment of this application. Figure 10 As shown, the complementary metal-oxide-semiconductor die 102 has a plurality of first contacts 1022, and the microelectromechanical system die 101 has a plurality of second contacts 1012. The first contacts 1022 and the second contacts 1012 are correspondingly arranged, and the first contacts 1022 and the corresponding second contacts 1012 are welded together so that the components on the microelectromechanical system die 101 are electrically connected to the components on the complementary metal-oxide-semiconductor die 102, thereby enabling the microelectromechanical system resonator 10 to work normally and stably output the first frequency f1.

[0073] In this embodiment, the microelectromechanical system (MEMS) die 101 has a second groove on the side near the complementary metal-oxide-semiconductor (CMOS) die 102, and the capacitor 111 is disposed in the second groove. It should be noted that, in this embodiment, the CMOS die 102 and the MEMS die 101 are connected by flip-chip bonding. Specifically, the CMOS die 102 and the MEMS die 101 are directly soldered and connected through the first contact 1022 and the second contact 1012, without the need for leads. Therefore, this arrangement facilitates the connection of the inductor 112 and the vibration control circuit 113 disposed on the CMOS die 102 with the capacitor 111, thereby forming an oscillation circuit 11.

[0074] In this configuration, the side of capacitor 111 closest to the complementary metal-oxide-semiconductor (CMOS) die 102 is flush with the side of microelectromechanical system (MEMS) die 101 closest to the CMOS die 102. It should be noted that this arrangement allows for the simultaneous soldering of the connecting capacitor 111 and the resonator 1011, achieving a one-step molding process, thereby reducing costs and improving efficiency.

[0075] In the temperature determination device provided in this application embodiment, the device includes a microelectromechanical system (MEMS) resonator, an oscillation circuit, a coupling unit, and a temperature determination unit. The MEMS resonator, oscillation circuit, and temperature determination unit are all electrically connected to the coupling unit. In this application embodiment, the coupling unit first calculates the coupling value between the first frequency output by the MEMS resonator and the second frequency output by the oscillation circuit. Then, the temperature determination unit obtains the real-time temperature of the MEMS oscillator based on the coupling value. This application embodiment does not directly measure the temperature; instead, it obtains the coupling value and uses the correspondence between the coupling value and the temperature to obtain the real-time temperature of the MEMS oscillator. Therefore, using the temperature determination device provided in this application embodiment to measure the temperature of the MEMS oscillator is not only simple, fast, and efficient, but also highly accurate, enabling high-precision temperature measurement and compensation for frequency deviations caused by temperature variations in the MEMS oscillator, thereby outputting a signal with the desired frequency.

[0076] The above provides a detailed description of a temperature determination device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A temperature determining device, characterized in that, include: Microelectromechanical system resonator, used to output the first frequency; An oscillation circuit is used to output a second frequency, and the oscillation circuit has a different temperature coefficient from the microelectromechanical system resonator. A coupling unit is electrically connected to the microelectromechanical system resonator and the oscillation circuit, respectively. The coupling unit is used to receive the first frequency and the second frequency, and couple the first frequency and the second frequency to obtain a coupling value of the first frequency and the second frequency. The coupling value is proportional to the temperature of the microelectromechanical system oscillator. The microelectromechanical system oscillator includes the microelectromechanical system resonator and the oscillation circuit. A temperature determination unit is electrically connected to the coupling unit. The temperature determination unit is used to receive the coupling value and determine the real-time temperature of the microelectromechanical system oscillator based on the coupling value and the pre-obtained correspondence between the coupling value and the temperature. The correspondence is a lookup table. The lookup table is obtained by placing the temperature determination device in a temperature-measurable environment, then obtaining multiple sets of first frequencies and second frequencies, and coupling to obtain coupling values, thereby obtaining multiple coordinate points corresponding to the coupling values ​​and the temperature. These multiple coordinate points then form a lookup table. The temperature value corresponding to the coupling value is found using the lookup table to serve as the real-time temperature.

2. The temperature determining device according to claim 1, characterized in that, The coupling value is obtained based on the ratio, sum, or difference between the second frequency and the first frequency.

3. The temperature determining device according to claim 1, characterized in that, It also includes a storage unit, which is electrically connected to the temperature determination unit and is used to store the correspondence between the coupling value and the temperature.

4. The temperature determining device according to claim 1, characterized in that, It also includes an output unit, which is electrically connected to the temperature determination unit and is used to obtain and output the temperature data of the microelectromechanical system resonator from the temperature determination unit.

5. The temperature determining device according to claim 1, characterized in that, The microelectromechanical system resonator includes an electrically connected microelectromechanical system die and a complementary metal-oxide-semiconductor die.

6. The temperature determining device according to claim 5, characterized in that, The complementary metal-oxide-semiconductor die has a plurality of first contacts, and the microelectromechanical system die has a plurality of second contacts. The first contacts and the second contacts are correspondingly arranged, and the first contacts and the corresponding second contacts are bonded or soldered together by metal wires.

7. The temperature determining device according to claim 5, characterized in that, The microelectromechanical system (MEMS) dies and the complementary metal-oxide-semiconductor (CMOS) dies are stacked, arranged side-by-side, or staggered.

8. The temperature determining device according to claim 5, characterized in that, The oscillation circuit, the coupling unit, and the temperature determination unit are integrated on the microelectromechanical system die and / or the complementary metal-oxide-semiconductor die.

9. The temperature determining device according to claim 6, characterized in that, The microelectromechanical system die includes a working area and a non-working area, and the working area is equipped with a resonator.

10. The temperature determining device according to claim 9, characterized in that, The oscillation circuit includes a capacitor, an inductor, and an oscillation control circuit. The capacitor and the inductor are both electrically connected to the oscillation control circuit, and the capacitor and / or the inductor are located in the non-working area.

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