A dynamic support device and method for wafer probe detection

Abstract

The present invention discloses a dynamic support device and method for wafer probe detection, which relates to the field of semiconductor technology. The present invention configures hydraulic pipes at multiple positions on the annular side edge of a fixed base plate and a sinker plate, and sets a top plate and an elastic buffer pad. At the same time, a photoelectric distance probe is used to sense and detect the horizontal state of the sinker plate after the wafer is placed and before detection, and the horizontal state of the sinker plate is accurately adjusted. When the test probe group contacts the wafer for testing, the uneven squeezing force distribution generated during the wafer test is strain-sensed by the piezoresistors distributed in an array on the sinker plate. An electromagnetic module is configured under the position of each piezoresistor in a parallel branch manner to form a dedicated squeezing buffer for the position of the piezoresistor with different pressure levels, thereby reducing the excessive squeezing degree of the test probe, ensuring the service life of the probe, and ensuring the accuracy of wafer testing during long-term testing.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a dynamic support device and method for wafer probe detection. Background Art

[0002] Wafer testing involves probing each die on a wafer. The probes on the probe card contact the pads on the die to test their electrical characteristics. Failed dies are marked and discarded when the wafer is cut into individual dies, avoiding further manufacturing costs. However, due to external factors such as ultra-micro deformations in the wafer structure and incomplete flatness or levelness of the wafer or test surface, when the probe card probes contact the pads on the die on the wafer, even with the drive control of a high-precision servo positioning control system (the drive control system also has errors in stroke control), the probes will experience different contact pressures when contacting the pads at different locations during contact testing. Frequent testing over a long period of time and abnormal pressure can easily lead to invisible deformation of the probes, shortening their service life and affecting wafer testing accuracy. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a dynamic support device and method for wafer probe detection, thereby reducing the degree of excessive extrusion of the test probe, ensuring the service life of the probe, and ensuring the accuracy of wafer testing during long-term testing.

[0004] To solve the above technical problems, the present invention is achieved through the following technical solutions:

[0005] The present invention provides a dynamic support device for wafer probe detection, wherein a fixed base is horizontally fixedly installed on the upper side of a base frame, a plurality of hydraulic pipes are annularly distributed on the bottom side of the fixed base, the base frame is provided with a liquid supply control mechanism independently connected to each hydraulic pipe, an output shaft of the hydraulic pipe is arranged upward and movably passes through the fixed base, a top plate is fixedly installed on the upper end of the output shaft of the hydraulic pipe, an elastic buffer pad is attached to the side surface of the top plate, a plastic sedimentation plate is jointly supported and installed on the upper sides of the plurality of elastic buffer pads, a gap is left between the bottom surface of the plastic sedimentation plate and the top surface of the fixed base, a wafer to be tested is placed on the upper side of the plastic sedimentation plate, a flat horizontal annular surface is provided on the edge area of ​​the upper side of the plastic sedimentation plate, a plurality of photoelectric distance probes and a fixed bracket for fixedly installing the photoelectric distance probes are provided above the horizontal annular surface.

[0006] A positioning mechanism and a probe lift mechanism are located above the plastic sedimentation plate. The probe lift mechanism's lift shaft faces downward, and a probe card is mounted on its underside. The probe card is equipped with a test probe assembly containing multiple probe structures. Multiple arrayed varistors are embedded in the top surface of the plastic sedimentation plate. Magnetic blocks, aligned with the varistors, are embedded in the bottom surface. An electromagnetic module, aligned with the magnetic blocks, is embedded in the top surface of the fixed base.

[0007] The base frame houses a built-in PCB. The varistors and electromagnetic modules are electrically connected to the PCB via flat cables. The photoelectric distance sensor and liquid supply control mechanism are connected to the PCB via signal lines. The PCB is equipped with a current conversion circuit containing a constant voltage source module. Varistors and electromagnetic modules in the same vertical direction are located in the same electrical branch and connected in series with the constant voltage source module. Multiple electrical branches are connected in parallel.

[0008] As a preferred technical solution of the dynamic support device of the present invention: the fixed base plate is provided with a through hole structure for the vertical movement of the hydraulic pipe output shaft. The fixed base plate is provided with a vertical pipe groove, and a flat-mouthed pipe for inserting and protecting the wiring is installed in the vertical pipe groove.

[0009] As a preferred technical solution of the dynamic support device of the present invention: a photoelectric distance probe is arranged directly above each hydraulic pipe.

[0010] As an optimal technical solution for the dynamic support device of the present invention: a pressurized liquid guide pipe and a pressure-reducing liquid return pipe are arranged between the liquid supply control mechanism and each hydraulic pipe, and the liquid supply control mechanism is equipped with an electrically controlled valve connected to the pressurized liquid guide pipe and the pressure-reducing liquid return pipe.

[0011] As an optimal technical solution of the dynamic support device of the present invention: the plastic sedimentation plate is provided with a placement area for placing the wafer to be tested, the varistor is located within the placement area, and the plane position of the placement area is lower than the plane position of the horizontal annular surface.

[0012] The present invention provides a dynamic support method for wafer probe detection, which includes the following steps:

[0013] S1. Place the wafer to be tested on a plastic sedimentation tray.

[0014] S2. Multiple photoelectric distance sensors sense the horizontal ring surface distance at this time. The PCB mainboard system determines whether each detected point on the horizontal ring surface is at the "flush height" position preset by the PCB mainboard system. The hydraulic pressure strength of the hydraulic pipe is driven by the hydraulic supply control mechanism to adjust the horizontal ring surface height position at the corresponding position until the height of each position on the horizontal ring surface is at the "flush height" position.

[0015] S3. The probe card moves to the designated position controlled by the detection system, and the test probe group of the probe card begins to descend to detect the die at the designated position of the wafer.

[0016] S4. When the test probe group contacts the wafer, the squeezing force of the wafer on the varistor changes, and the resistance values ​​of the varistor at different positions change differently.

[0017] The resistance of the varistor at the compressed position decreases, and the magnetic attraction of the electromagnetic module directly below the varistor to the magnetic block directly above it is enhanced. The plastic sedimentation plate area where the magnetic block is located undergoes micro-deformation, and the contact extrusion pressure between the plastic sedimentation plate area where the magnetic block is located and the wafer is reduced.

[0018] S5. The test probe group completes a "descent" test. When the test probe group rises, the pressure on the varistor is reduced and returns to its initial state when the wafer is placed. The electromagnetic module also restores its magnetic attraction to the magnetic block directly above it.

[0019] S6. Each time the test probe group completes a "descent" test, the photoelectric distance probe performs a "calibration" on the height position of the horizontal ring surface and re-determines whether each detected point on the horizontal ring surface is at the "flush height" position. If all detected points on the horizontal ring surface are at the "flush height" position, the test probe group will continue to test the remaining positions of the wafer to be tested. If any detected point on the horizontal ring surface is not at the "flush height" position, the hydraulic pressure strength of the hydraulic pipe at the same position as the detected point will be controlled again by the liquid supply control mechanism to adjust the height position of the horizontal ring surface at that position until the height position of the horizontal ring surface at that position is at the "flush height" position.

[0020] S7. Repeat steps S2 to S6.

[0021] As a preferred technical solution for the dynamic support method for wafer probe detection of the present invention: when the PCB mainboard system judges whether each detected point on the horizontal annular surface is at the "flush height" position preset by the PCB mainboard system, if any photoelectric distance probe detects that the position of the horizontal annular surface is higher than the "flush height" position, the liquid supply control mechanism controls to reduce the hydraulic strength of the hydraulic pipe corresponding to the area of ​​the plastic sedimentation plate facing the ground by the photoelectric distance probe until the horizontal position of the horizontal annular surface is at the "flush height" position, and the liquid supply control mechanism stops reducing the hydraulic strength of the hydraulic pipe. If any photoelectric distance probe detects that the position of the horizontal annular surface is lower than the "flush height" position, the liquid supply control mechanism controls to increase the hydraulic strength of the hydraulic pipe corresponding to the area of ​​the plastic sedimentation plate facing the ground by the photoelectric distance probe until the horizontal position of the horizontal annular surface is at the "flush height" position, and the liquid supply control mechanism stops increasing the hydraulic strength of the hydraulic pipe.

[0022] Compared with the existing technology, the beneficial effects of the present invention are:

[0023] The present invention configures hydraulic pipes at multiple positions on the annular side edge of a fixed base plate and a sedimentation plate, and sets a top plate and an elastic buffer pad. At the same time, a photoelectric distance probe is used to sense the horizontal state of the sedimentation plate after the wafer is placed and before detection, and the horizontal state of the sedimentation plate is accurately adjusted. When the test probe group contacts the wafer for testing, the extrusion force generated is strain-sensed by the piezoresistors distributed in an array on the sedimentation plate for the uneven extrusion force distribution generated during the wafer test, and an electromagnetic module is configured under the position of each piezoresistor in a parallel branch manner to form an exclusive extrusion buffer for the area where the piezoresistors with different pressure degrees are located, which forms a coupled linkage pre-trend coordination with the full-area downward pressure buffer of the sedimentation plate through the elastic buffer pad, thereby reducing the excessive extrusion of the test probe, ensuring the service life of the probe, and ensuring the accuracy of wafer testing during long-term testing. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is an overall schematic diagram of the dynamic support device in the present invention.

[0025] Figure 2 for Figure 1 Schematic diagram of the local enlargement at point A in the middle.

[0026] Figure 3 This is a circuit logic diagram of the varistor and electromagnetic module in the present invention.

[0027] Figure 4 Schematic diagram (top view) showing the positional relationship between the photoelectric distance probe and the hydraulic pipe in the present invention.

[0028] Among them: 1-base frame; 2-fixed base plate, 201-vertical tube groove; 3-plastic sedimentation plate, 301-horizontal ring surface, 302-placement area; 4-wafer to be tested; 5-photoelectric distance probe, 501-fixed bracket; 6-positioning movement mechanism; 7-probe lifting mechanism; 8-probe card, 801-test probe group; 9-hydraulic pipe, 901-pressurization liquid guide pipe, 902-depressurization return liquid pipe, 903-top plate, 904-elastic buffer pad; 10-flat tube; 11-PCB motherboard; 12-cable; 13-varistor (13 Figure 3 Ry1, Ry2, Ry3...Ryn); 14-magnetic block; 15-electromagnetic module (15 Figure 3 T1, T2, T3...Tn); 16-liquid supply control mechanism; U-constant pressure source module. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0030] Embodiment 1: The present invention relates to a dynamic support device for wafer probe detection, the main structural features of which are as follows:

[0031] See also Figure 1 The fixed base plate 2 is horizontally fixedly mounted on the upper side of the base frame 1. A plurality of hydraulic pipes 9 are distributed in a circular pattern on the bottom side of the fixed base plate 2. The base frame 1 has a built-in liquid supply control mechanism 16, which is independently connected to each hydraulic pipe 9. Each hydraulic pipe 9 is equipped with a pressurized liquid guide pipe 901 and a pressure-reducing liquid return pipe 902, and is connected to the liquid supply control mechanism 16. The liquid supply control mechanism 16 is equipped with an electrically controlled valve connected to the pressurized liquid guide pipe 901 and the pressure-reducing liquid return pipe 902. A positioning mechanism 6 is disposed above the plastic sedimentation plate 3. A probe lifting mechanism 7 moves in a fixed position on the positioning mechanism 6. The lifting shaft of the probe lifting mechanism 7 faces downward. A probe card 8 is mounted on the lower end of the lifting shaft of the probe lifting mechanism 7. The probe card 8 is equipped with a test probe group 801, which includes multiple probe structures.

[0032] See also Figure 1 、 Figure 2 , the output shaft of the hydraulic tube 9 faces upward, and the fixed base 2 is provided with a through-hole structure for the vertical movement of the output shaft of the hydraulic tube 9, and the output shaft of the hydraulic tube 9 moves through the through-hole structure of the fixed base 2. A top plate 903 is fixedly installed on the upper side end of the output shaft of the hydraulic tube 9, and an elastic buffer pad 904 is attached to the upper side of the top plate 903. The upper sides of multiple elastic buffer pads 904 jointly support and install a plastic sedimentation plate 3, and a gap is left between the bottom surface of the plastic sedimentation plate 3 and the top surface of the fixed base 2 (to facilitate the space reserved when the elastic buffer pad 904 is deformed). The wafer 4 to be tested is placed on the upper side of the plastic sedimentation plate 3, and a flat horizontal annular surface 301 is set in the edge area of ​​the upper side of the plastic sedimentation plate 3. The plastic sedimentation plate 3 is provided with a placement area 302. The placement area 302 is used to place the wafer 4 to be tested. The plane position of the placement area 302 is lower than the plane position of the horizontal annular surface 301. Figure 2 In the figure, the placement area 302 is covered by the wafer 4 to be tested, so the arrow indicating the placement area 302 is marked at the edge of the placement area 302. A plurality of photoelectric distance probes 5 are provided above the horizontal ring surface 301. The fixing bracket 501 is used to fix the photoelectric distance probes 5. A photoelectric distance probe 5 is arranged directly above a hydraulic pipe 9 (e.g., Figure 4 In the figure, from a top view, a hydraulic pipe 9 and a photoelectric distance probe 5 are correspondingly arranged in the same vertical position).

[0033] See also Figure 2The top surface of the plastic sedimentation plate 3 is embedded with a plurality of varistors 13, and the plurality of varistors 13 are distributed in an array (the varistors 13 are located within the placement area 302). The bottom surface of the plastic sedimentation plate 3 is embedded with a plurality of magnetic blocks 14, and the positions of the magnetic blocks 14 and the varistors 13 are aligned one by one. The top surface of the fixed base plate 2 is embedded with a plurality of electromagnetic modules 15, and the positions of the electromagnetic modules 15 and the magnetic blocks 14 are aligned one by one. The base frame 1 has a built-in PCB motherboard 11, and the varistors 13 and the electromagnetic modules 15 are electrically connected to the PCB motherboard 11 through the cable 12 (the fixed base plate 2 is provided with a vertical pipe groove 201, and a flat-mouthed tube 10 for inserting and protecting the cable 12 is installed at the position of the vertical pipe groove 201). The photoelectric distance probe 5 and the liquid supply control mechanism 16 are connected to the PCB motherboard 11 through a signal line.

[0034] See also Figure 2 、 Figure 3 The PCB mainboard 11 is configured with a current conversion circuit containing a constant voltage source module U (because the resistance of the varistor 13 changes after being subjected to pressure, resulting in a change in current). The varistor 13 and the electromagnetic module 15 in the same vertical direction are in the same electrical branch and are connected in series with the constant voltage source module U, and multiple electrical branches are connected in parallel with each other.

[0035] Embodiment 2: The present invention relates to a dynamic support method for wafer probe detection, which includes the following steps:

[0036] Step 1: Place the wafer 4 to be tested on the plastic sedimentation tray 3.

[0037] Step 2. Multiple photoelectric distance probes 5 sense the distance of the horizontal annular surface 301 at this time, and the PCB mainboard 11 system determines whether each detected point on the horizontal annular surface is at the "flush height" position preset by the PCB mainboard 11 system (the "flush height" position refers to the height position that the horizontal annular surface 301 of the plastic sedimentation tray 3 should reach after the wafer 4 to be tested is placed on the plastic sedimentation tray 3. When the entire horizontal annular surface is at the "flush height" position, it indicates that the plastic sedimentation tray 3 is in a normal state and the wafer can be tested. When the photoelectric distance probe 5 detects downward, if the detected distance meets the distance parameter preset by the system, the horizontal annular surface 301 at that position is at the "flush height" position). The hydraulic pressure of the hydraulic pipe is controlled by the liquid supply control mechanism 16 to adjust the height position of the horizontal annular surface at the corresponding position until the height of the horizontal annular surface 301 at each position is at the "flush height" position.

[0038] Among them, when the PCB main board 11 system judges whether each detected point of the horizontal ring surface 301 is at the "flush height" position preset by the PCB main board 11 system:

[0039] Scenario 1. If any photoelectric distance probe 5 detects that the position of the horizontal annular surface 301 is higher than the "flush height" position, the liquid supply control mechanism 16 controls to reduce the hydraulic strength of the hydraulic pipe 9 corresponding to the area of ​​the plastic sedimentation plate 3 facing the photoelectric distance probe 5 until the horizontal position of the horizontal annular surface 301 is at the "flush height" position, and the liquid supply control mechanism 16 stops reducing the hydraulic strength of the hydraulic pipe 9.

[0040] Scenario 2. If any photoelectric distance probe 5 detects that the position of the horizontal annular surface 301 is lower than the "flush height" position, the liquid supply control mechanism 16 controls to increase the hydraulic strength of the hydraulic pipe 9 corresponding to the area of ​​the plastic sedimentation plate 3 facing the photoelectric distance probe 5 until the horizontal position of the horizontal annular surface 301 is at the "flush height" position, and the liquid supply control mechanism 16 stops increasing the hydraulic strength of the hydraulic pipe 9.

[0041] Link 3. The positioning movement mechanism 6 drives the probe card 8 to move to the designated position controlled by the detection system, and the probe lifting mechanism 7 drives the test probe group 801 of the probe card 8 to start descending to detect the die at the designated position of the wafer.

[0042] Link 4. When the test probe group 801 contacts the wafer, the squeezing force of the wafer on the varistor 13 changes, and the resistance of the varistor 13 at different positions changes differently. The resistance of the varistor 13 at the compressed position decreases, and the electromagnetic module 15 directly below the varistor 13 increases the magnetic attraction force of the magnetic block 14 directly above it. The area of ​​the plastic sedimentation plate 3 where the magnetic block 14 is located undergoes micro-deformation, and the contact squeezing force between the plastic sedimentation plate 3 where the magnetic block 14 is located and the wafer decreases. Under the reverse action, the squeezing force between the wafer and the upper probe is also reduced to prevent the probe tip from being overstressed. Figure 3 When the resistance of the varistor 13 in any electric branch decreases, the current in the electric branch will increase, and the magnetic attraction force of the electromagnetic module 15 in the electric branch will increase.

[0043] Step 5. The test probe group 801 completes a "descent" test (a "descent" test is to complete a test on one grain. For subsequent tests on other grains, the test probe group 801 needs to rise, translate, descend, and then test). When the test probe group 801 rises, the pressure on the varistor 13 is reduced and returns to the initial state when the wafer is placed. The electromagnetic module 15 simultaneously restores the magnetic attraction of the magnetic block 14 directly above it, that is, it returns to the state before the test probe group 801 produces no contact and extrusion on the wafer.

[0044] Step 6. Each time the test probe group 801 completes a "descent" detection, the photoelectric distance probe 5 "calibrates" the height position of the horizontal ring surface 301 and re-determines whether each detected point of the horizontal ring surface 301 is at the "flush height" position.

[0045] Scenario 1: If all the inspected points on the horizontal annulus 301 are at the "flush height" position, the test probe assembly 801 continues to test the remaining positions of the wafer 4 to be tested. Scenario 2: If any inspected point on the horizontal annulus 301 is not at the "flush height" position, the hydraulic pressure intensity of the hydraulic pipe 9 at the same location as the inspected point is again controlled by the liquid supply control mechanism 16 to adjust the height of the horizontal annulus 301 at that location until the horizontal annulus 301 at that location is at the "flush height" position.

[0046] Step 7. Repeat the contents of Steps 2 to 6.

[0047] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A dynamic support device for wafer probe detection, characterized by: The invention comprises a base frame (1), a fixed base plate (2) is fixedly installed horizontally on the upper side of the base frame (1), a plurality of hydraulic pipes (9) are distributed in an annular manner on the lower side of the fixed base plate (2), the base frame (1) is provided with a liquid supply control mechanism (16) independently connected to each hydraulic pipe (9), the output shaft of the hydraulic pipe (9) is arranged upward and movably passes through the fixed base plate (2), a top plate (903) is fixedly installed on the upper side end of the output shaft of the hydraulic pipe (9), and an elastic buffer pad (903) is attached to the upper side of the top plate (903). 04), a plurality of elastic buffer pads (904) are supported on the upper side thereof and a plastic sedimentation plate (3) is installed, a gap is left between the bottom surface of the plastic sedimentation plate (3) and the top surface of the fixed base plate (2), a wafer to be tested (4) is placed on the upper side of the plastic sedimentation plate (3), a flat horizontal annular surface (301) is provided on the edge area of ​​the upper side of the plastic sedimentation plate (3), and a plurality of photoelectric distance probes (5) and a fixing bracket (501) for fixing the photoelectric distance probes (5) are provided above the horizontal annular surface (301); A positioning moving mechanism (6) and a probe lifting mechanism (7) that moves at a fixed point on the positioning moving mechanism (6) are arranged above the plastic sedimentation plate (3); a lifting shaft of the probe lifting mechanism (7) is arranged downward and a probe card (8) is installed at the lower end of the lifting shaft; the probe card (8) is equipped with a test probe group (801) containing multiple probe structures; The top surface of the plastic sedimentation plate (3) is embedded with a plurality of array-distributed piezoresistors (13), the bottom surface of the plastic sedimentation plate (3) is embedded with a magnetic block (14) aligned one-to-one with the piezoresistors (13), and the top surface of the fixed base plate (2) is embedded with an electromagnetic module (15) aligned one-to-one with the magnetic block (14); The base frame (1) has a built-in PCB mainboard (11); the varistor (13) and the electromagnetic module (15) are electrically connected to the PCB mainboard (11) via a flat cable (12); and the photoelectric distance probe (5) and the liquid supply control mechanism (16) are connected to the PCB mainboard (11) via a signal line. The PCB mainboard (11) is configured with a current conversion circuit containing a constant voltage source module (U); the varistor (13) and the electromagnetic module (15) in the same vertical direction are in the same electrical branch and are connected in series with the constant voltage source module (U); and the multiple electrical branches are connected in parallel.

2. The dynamic support device for wafer probe detection according to claim 1, characterized in that: The fixed base plate (2) is provided with a through hole structure for vertical movement of the output shaft of the hydraulic pipe (9); The fixed base plate (2) is provided with a vertical pipe groove (201), and a flat-mouthed pipe (10) for inserting and protecting the cable (12) is installed at the position of the vertical pipe groove (201).

3. The dynamic support device for wafer probe detection according to claim 1, characterized in that: A photoelectric distance probe (5) is arranged right above each hydraulic pipe (9).

4. The dynamic support device for wafer probe detection according to claim 1, characterized in that: A pressurized liquid guide tube (901) and a pressure-reducing liquid return tube (902) are arranged between the liquid supply control mechanism (16) and each hydraulic pipe (9), and the liquid supply control mechanism (16) is equipped with an electric control valve connected to the pressurized liquid guide tube (901) and the pressure-reducing liquid return tube (902).

5. The dynamic support device for wafer probe detection according to claim 1, characterized in that: The plastic sedimentation tray (3) is provided with a placement area (302) for placing a wafer (4) to be tested, the varistor (13) is located within the placement area (302), and the plane position of the placement area (302) is lower than the plane position of the horizontal annular surface (301).

6. A dynamic support method for wafer probe detection, characterized in that: A wafer probe detection dynamic support device according to any one of claims 1 to 5 includes the following steps: S1. Place the wafer to be tested (4) on the plastic sedimentation tray (3); S2. Multiple photoelectric distance probes (5) sense the distance of the horizontal ring surface (301) at this time, and the PCB main board (11) system determines whether each detected point of the horizontal ring surface is at the "flush height" position preset by the PCB main board (11) system, and controls the hydraulic pressure strength of the hydraulic pipe through the liquid supply control mechanism (16) to adjust the height position of the horizontal ring surface at the corresponding position until the height of the horizontal ring surface (301) at each position is at the "flush height" position; S3. The probe card (8) moves to the designated position controlled by the detection system, and the test probe group (801) of the probe card (8) begins to descend to detect the grains at the designated position of the wafer; S4. When the test probe group (801) contacts the wafer, the extrusion force of the wafer on the varistor (13) changes, and the varistor (13) at different positions changes in resistance; The resistance of the piezoresistor (13) at the pressure position is reduced, the magnetic attraction force of the electromagnetic module (15) directly below the piezoresistor (13) on the magnetic block (14) directly above it is enhanced, the area of ​​the plastic sedimentation plate (3) where the magnetic block (14) is located is slightly deformed, and the contact extrusion force between the area of ​​the plastic sedimentation plate (3) where the magnetic block (14) is located and the wafer is reduced; S5. The test probe group (801) completes a "descent" test. When the test probe group (801) rises, the pressure on the varistor (13) is reduced and returns to the initial state when the wafer is placed. The magnetic attraction of the electromagnetic module (15) to the magnetic block (14) directly above it is synchronously restored. S6. Each time the test probe group (801) completes a "descent" detection, the photoelectric distance probe (5) performs a "calibration" on the height position of the horizontal annulus (301), and re-determines whether each detected point of the horizontal annulus (301) is at a "flush height" position; If all the detected points on the horizontal ring surface (301) are at the "flush height" position, the remaining positions of the wafer (4) to be tested are continued to be tested by the test probe group (801); If any detected point of the horizontal annular surface (301) is not at the "flush height" position, the hydraulic pressure of the hydraulic pipe (9) at the same position as the detected point is controlled again by the liquid supply control mechanism (16) to adjust the height position of the horizontal annular surface (301) at that position until the height position of the horizontal annular surface (301) at that position is at the "flush height" position; S7. Repeat steps S2 to S6.

7. The dynamic support method for wafer probe detection according to claim 6, characterized in that: When the PCB mainboard (11) system judges whether each detected point of the horizontal ring surface (301) is at a "flush height" position preset by the PCB mainboard (11) system: If any photoelectric distance probe (5) detects that the position of the horizontal ring surface (301) is higher than the "flush height" position, the liquid supply control mechanism (16) controls to reduce the hydraulic pressure strength of the hydraulic pipe (9) corresponding to the area of ​​the photoelectric distance probe (5) facing the ground plastic sedimentation plate (3) until the horizontal position of the horizontal ring surface (301) is at the "flush height" position, and the liquid supply control mechanism (16) stops reducing the hydraulic pressure strength of the hydraulic pipe (9); If any photoelectric distance probe (5) detects that the position of the horizontal ring surface (301) is lower than the "flush height" position, the liquid supply control mechanism (16) controls to increase the hydraulic pressure of the hydraulic pipe (9) corresponding to the area of ​​the plastic sedimentation plate (3) directly facing the photoelectric distance probe (5) until the horizontal position of the horizontal ring surface (301) is at the "flush height" position, and the liquid supply control mechanism (16) stops increasing the hydraulic pressure of the hydraulic pipe (9).

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