Distributed Flow Pattern Heat Sink Based on Microchannels in the Substrate of Semiconductor Laser Chips and Semiconductor Lasers

Abstract

The present invention relates to a distributed flow pattern heat sink and semiconductor laser based on semiconductor laser chip substrate microchannels, aiming to address the technical problems of low chip yield and uneven heat dissipation caused by high coolant driving pressure and long heat exchange processes in existing microchannel heat sinks. In this heat sink, the chip substrate microchannel layer includes multiple substrate microchannels, whose dimensions along the Y direction are greater than or equal to the dimensions of the chip active area along the Y direction; the bottom plate layer is provided with multiple coolant inlets; the distributed flow pattern area of the distributed flow pattern layer includes multiple alternating coolant inlet channels and coolant outlet channels, which extend along the X direction and penetrate the distributed flow pattern layer along the Z direction, with one port communicating with each substrate microchannel; the coolant inlet channel also includes a port communicating with the coolant inlet; and the coolant outlet channel also includes a sealed port and a coolant outlet located on the YZ plane.

Description

Technical Field

[0001] The invention relates to a heat dissipation device for a semiconductor laser chip, in particular to a distributed flow type heat sink based on a semiconductor laser chip substrate microchannel and a semiconductor laser. Background Art

[0002] With the continuous advancement of semiconductor manufacturing technology, the application of laser chips has also increased. Laser chip cooling technology has always been a research hotspot in related fields. Among them, microchannel heat sinks are currently the most important cooling technology for high-power chips.

[0003] like Figure 1-Figure 3 As shown, the laser chip with a microchannel heat sink is divided into a semiconductor laser chip working area 01, a substrate-current diffusion area 02, and a substrate-refrigerant channel area 03. The semiconductor laser chip working area 01 is the laser chip active area, the main functional area, and the main heat generation area of the laser chip. The substrate-current diffusion area 02 is the area where current diffuses and flows, and also plays a role in structural mechanical reinforcement. The substrate-refrigerant channel area 03 is the heat dissipation functional area. The heat generated in the laser chip working area is transferred to the substrate-refrigerant channel area 03 through the substrate-current diffusion area 02. Within the refrigerant channel area, heat exchange occurs with the refrigerant flowing inside, achieving the purpose of cooling. The refrigerant can be liquid, such as water, a mixture of water and organic matter, a mixture of organic matter, or a mixture of liquid and gas, or liquid metal. However, the above structure has the following problems: 1. The cooling flow rate at the refrigerant inlet is large, and the required driving pressure is large, while the chip is thin and easily broken by force, resulting in low product yield; 2. The refrigerant enters the microchannel and exchanges heat with the substrate-current diffusion area 02, and flows out along the width direction of the substrate. The effective heat exchange process is long, so that the fluid along the width direction of the substrate is heated. The fluid temperature at the refrigerant outlet is higher than the temperature at the refrigerant inlet, resulting in uneven temperature distribution along the width direction of the substrate. Summary of the Invention

[0004] The purpose of the present invention is to solve the technical problems of low chip yield and uneven heat dissipation caused by high coolant driving pressure and long heat exchange process in existing microchannel heat sinks, and propose a distributed flow type heat sink and semiconductor laser based on the microchannel of the semiconductor laser chip substrate.

[0005] The technical solution provided by the present invention is:

[0006] A distributed flow pattern heat sink based on a semiconductor laser chip substrate microchannel, which is special in that it comprises a chip substrate microchannel layer, a distributed flow pattern layer and a bottom plate layer arranged in sequence;

[0007] The semiconductor laser chip is defined as having a width direction of X, a length direction of Y, and a height direction of Z. The chip substrate microchannel layer includes a plurality of substrate microchannels extending along the Y direction, with first partitions between the substrate microchannels. The substrate microchannels have a dimension L1 along the Y direction, a dimension d1 along the X direction, and a dimension h1 along the Z direction, wherein L1 is greater than or equal to the dimension of the chip active area along the Y direction.

[0008] The bottom plate layer is provided with a plurality of coolant inlets;

[0009] The distributed flow pattern layer includes a distributed flow pattern area and an edge area for welding; the distributed flow pattern area includes a plurality of alternating coolant inlet channels and coolant outlet channels, a second partition wall is formed between the coolant inlet channels and the coolant outlet channels, and an XY end surface of the second partition wall is fixedly connected to the XY end surface of the first partition wall;

[0010] The cooling liquid inlet channel extends along the X direction and penetrates the distributed flow pattern layer along the Z direction. One end of the cooling liquid inlet channel located on the XY plane communicates with each substrate microchannel, and another end of the cooling liquid inlet channel located on the XY plane communicates with the corresponding cooling liquid inlet on the bottom plate layer.

[0011] The cooling liquid discharge channel extends along the X direction and penetrates the distributed flow pattern layer along the Z direction. One end of the cooling liquid discharge channel located on the XY plane communicates with each substrate microchannel. The bottom plate layer seals and covers the other end of the cooling liquid discharge channel located on the XY plane. The end of the cooling liquid discharge channel located on the YZ plane serves as a cooling liquid outlet.

[0012] The dimension of the cooling liquid inflow channel along the X direction is L2, the dimension along the Y direction is d2, and the dimension along the Z direction is h2, wherein L2 is greater than or equal to the dimension of the chip active area along the X direction;

[0013] The coolant discharge channel has a size L3 along the X direction, a size d3 along the Y direction, and a size h3 along the Z direction, wherein L3 is greater than L2, and h2=h3.

[0014] Furthermore, the cross section of the substrate microchannel in the XZ plane is rectangular, and the dimension d1 of the substrate microchannel along the X direction and the dimension h1 along the Z direction satisfy d1:h1=1:(7-12);

[0015] The dimension d2 of the coolant inlet channel along the Y direction is equal to the dimension d3 of the coolant outlet channel along the Y direction. The cross-section of the coolant inlet channel and the coolant outlet channel on the YZ plane is rectangular and satisfies d2:d1=10:(1-3) and d3:d1=10:(1-3).

[0016] Furthermore, the dimensions d2 and d3 of the coolant inlet channel and the coolant outlet channel along the Y direction are 0.1-0.5 mm;

[0017] The dimensions h2 and h3 of the coolant inlet channel and the coolant outlet channel along the Z direction are 0.3-1 mm.

[0018] Furthermore, the cross-section of the substrate microchannel XZ surface is trapezoidal, and along the X direction, the size of the side away from the distributed flow pattern layer is d1′, and the size of the side close to the distributed flow pattern layer is d1″, d1″>d1′ and d1″:d1′=10:(7-9).

[0019] Furthermore, the cross-section of the coolant inlet channel in the YZ plane is trapezoidal, and along the Y direction, the dimension d2′ on the side close to the substrate microchannel is smaller than the dimension d2″ on the side away from the substrate microchannel, and satisfies d2″:d1″=10:(1-3); at the same time, the cross-section of the coolant outlet channel in the XY plane is rectangular, and satisfies d3:d1″=10:(1-3);

[0020] Alternatively, the cross-section of the coolant discharge channel on the XY plane is trapezoidal, and along the Y direction, the dimension d3′ on the side close to the coolant outlet is smaller than the dimension d3″ on the side away from the coolant outlet, and satisfies d3″:d1″=10:(1-3); at the same time, the cross-section of the coolant inlet channel on the YZ plane is rectangular, and satisfies d2:d1″=10:(1-3).

[0021] Furthermore, the coolant flows into the trapezoidal cross section of the YZ surface of the channel, d2″:d2′=10:(7-9);

[0022] In the trapezoidal cross section of the coolant discharge channel on the XY plane, d3″:d3′=10:(6-8).

[0023] Furthermore, the distributed flow layer is made of copper, copper tungsten or silicon.

[0024] Furthermore, each coolant inflow channel and each coolant discharge channel in the distributed flow pattern area constitutes a hollow area, and the volume of the hollow area accounts for 30-60% of the volume of the distributed flow pattern area.

[0025] Furthermore, the volume of the hollow area accounts for 45-60% of the volume of the distributed flow pattern area.

[0026] The present invention also provides a semiconductor laser comprising a semiconductor laser chip and a heat sink arranged on the semiconductor laser chip, wherein the heat sink is the above-mentioned distributed flow type heat sink based on the semiconductor laser chip substrate microchannel.

[0027] Beneficial effects of the present invention:

[0028] 1. The present invention realizes a double-layer channel structure through substrate microchannels and alternately arranged coolant inflow channels and coolant discharge channels. The driving pressure of the coolant can be adjusted through a distributed flow layer to prevent damage to the laser chip.

[0029] 2. The present invention adopts a distributed flow structure and sets up multiple inlets and outlets to enter and exit the substrate microchannel, forming a jet at the same time, effectively increasing the inlet and outlet area and reducing the pressure; the distributed multiple inlets perpendicular to the substrate microchannel reduce the flow resistance of the fluid in the smaller coolant inlet channel and coolant outlet channel, further reducing the driving pressure.

[0030] 3. The effective process of heat exchange of the coolant in the present invention is relatively short, and the initial temperature of the coolant used for cooling each substrate microchannel is similar. The heat exchange efficiency is high and the uniformity of the cooling is improved, thereby avoiding the poor cooling effect caused by the high outlet coolant temperature, which leads to a reduction in the service life of the laser chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Schematic diagram of the existing semiconductor laser chip microchannel heat sink structure;

[0032] Figure 2 for Figure 1 A magnified schematic diagram of part A;

[0033] Figure 3 for Figure 1 An enlarged schematic diagram of part A from another angle;

[0034] Figure 4 Schematic diagram of the structure of an embodiment of a distributed flow type heat sink based on a semiconductor laser chip substrate microchannel according to the present invention;

[0035] Figure 5 For the present invention Figure 4 A magnified schematic diagram of part B;

[0036] Figure 6 For the present invention Figure 5 The enlarged schematic diagram of part C in the middle;

[0037] Figure 7 For the present invention Figure 5 The enlarged schematic diagram of part D in the middle;

[0038] Figure 8 Schematic diagram of the distributed flow layer structure in an embodiment of the present invention.

[0039] The reference numerals are as follows:

[0040] 01-semiconductor laser chip working area, 02-substrate-current diffusion area, 03-substrate-refrigerant channel area;

[0041] 1-chip substrate microchannel layer, 11-substrate microchannel, 12-first partition wall, 2-distributed flow pattern layer, 21-cooling liquid inflow channel, 22-cooling liquid discharge channel, 23-second partition wall. DETAILED DESCRIPTION

[0042] This embodiment provides a distributed flow pattern heat sink based on a semiconductor laser chip substrate microchannel. The heat sink includes a chip substrate microchannel layer 1, a distributed flow pattern layer 2, and a bottom plate layer arranged in sequence. The width direction of the semiconductor laser chip is defined as the X direction, the length direction as the Y direction, and the height direction as the Z direction.

[0043] The chip substrate microchannel layer 1 includes multiple substrate microchannels 11 extending along the Y direction, with first partitions 12 between the substrate microchannels 11. The dimension of the substrate microchannel 11 along the Y direction is L1, the dimension along the X direction is d1, and the dimension along the Z direction is h1, where L1 is greater than or equal to the dimension of the chip active area along the Y direction and satisfies d1:h1=1:(7-12).

[0044] The bottom plate layer is provided with multiple coolant inlets; the distributed flow pattern layer 2 includes a distributed flow pattern area and an edge area for welding. The distributed flow pattern layer 2 is made of copper, copper tungsten or silicon. Copper is the preferred material due to its good thermal conductivity and low price.

[0045] The distributed flow pattern area includes a plurality of alternating coolant inlet channels 21 and coolant outlet channels 22, with a second partition wall between the coolant inlet channels 21 and the coolant outlet channels 22. The XY end face of the second partition wall is fixedly connected to the portion where the XY end face of the first partition wall 12 meets, and in this embodiment, is fixed by welding; each coolant inlet channel 21 and coolant outlet channel 22 in the distributed flow pattern area constitutes a hollow area, and the volume of the hollow area accounts for 30-60% of the volume of the distributed flow pattern area. The coolant driving pressure can be controlled by adjusting the volume ratio of the hollow area, that is, adjusting the height and width of the hollow area, so as to meet the inflow and outflow of the coolant and realize the cooling of the laser chip, and realize the support of the entire chip through the second partition wall. Preferably, the volume of the hollow area accounts for 45-60% of the volume of the distributed flow pattern area. If the volume ratio of the hollow area is too high, the support of the overall structure will be relatively poor. In this embodiment, there are multiple cooling liquid inlet channels 21 and cooling liquid outlet channels 22, which are alternately arranged, so that the cooling liquid entering from the cooling liquid inlet channel 21 is discharged after a short effective cooling, ensuring that the cooling liquid evenly takes away the heat generated by the chip, improving the uniformity of chip cooling, and avoiding the problem that under the setting mode of single cooling liquid inlet and cooling liquid outlet, the cooling liquid temperature gradually rises as the flow lengthens, resulting in a decrease in the heat dissipation efficiency of the chip near the cooling liquid outlet, a high local temperature, and thus affecting the chip life.

[0046] The cooling liquid inlet channel 21 extends along the X direction and penetrates the distributed flow pattern layer 2 along the Z direction. One port of the cooling liquid inlet channel 21 located on the XY plane is connected to each substrate microchannel 11, and the other port of the cooling liquid inlet channel 21 located on the XY plane is connected to the cooling liquid inlet corresponding to the bottom plate layer; the cooling liquid discharge channel 22 extends along the X direction and penetrates the distributed flow pattern layer 2 along the Z direction. One port of the cooling liquid discharge channel 22 located on the XY plane is connected to each substrate microchannel 11, and the bottom plate layer is used to seal and cover the other port of the cooling liquid discharge channel 22 located on the XY plane. The port of the cooling liquid discharge channel 22 located on the YZ plane serves as the cooling liquid outlet.

[0047] The dimension of the coolant inflow channel 21 along the X direction is L2, the dimension along the Y direction is d2, and the dimension along the Z direction is h2, where L2 is greater than or equal to the dimension of the chip active area along the X direction; the dimension of the coolant discharge channel 22 along the X direction is L3, the dimension along the Y direction is d3, and the dimension along the Z direction is h3, where L3 is greater than L2.

[0048] In this embodiment, the dimensions of the cooling liquid inlet channel 21 and the cooling liquid outlet channel 22 along the Y direction are equal, the dimension h2 of the cooling liquid inlet channel 21 along the Z direction and the dimension h3 of the cooling liquid outlet channel 22 along the Z direction are equal, the cross-section of the YZ plane of the cooling liquid outlet channel 22 is rectangular, and satisfies d2:d1=10:(1-3) and d3:d1=10:(1-3); it can be understood that according to the proportion of the hollow volume, the appropriate dimensions of the cooling liquid inlet channel 21 and the cooling liquid outlet channel 22 can be designed, and then according to the ratio range of d2 and d1, the appropriate width and height of the substrate microchannel 11 can be selected; specifically, the dimension d2 or d3 of the cooling liquid inlet channel 21 and the cooling liquid outlet channel 22 along the Y direction is 0.1-0.5 mm; the dimension h2 or h3 of the cooling liquid inlet channel 21 and the cooling liquid outlet channel 22 along the Z direction is 0.3-1 mm.

[0049] Preferred Option 1:

[0050] The cross-section of the substrate microchannel 11XZ surface is trapezoidal. Along the X direction, the dimension of the side away from the distributed flow pattern layer 2 is d1′, and the dimension of the side close to the distributed flow pattern layer 2 is d1″, d1″>d1′ and d1″:d1′=10:(7-9); the cross-section of the coolant inflow channel 21YZ surface is trapezoidal and is set to be trapezoidal. Along the Y direction, the dimension d2′ of the trapezoid close to the substrate microchannel 11 is smaller than the dimension d2″ of the side away from the substrate microchannel 11, and satisfies d2″:d1″=10:(1-3), d2″:d2′=10:(7-9); at the same time, the cross-section of the coolant discharge channel 22XY surface is rectangular and satisfies d3:d1″=10:(1-3). On the one hand, the trapezoidal cross-section design of the substrate microchannel 11XZ surface increases the flow of the coolant along the inner side of the first partition wall 12, thereby increasing the heat exchange time of the chip substrate microchannel layer 1; on the other hand, the trapezoidal cross-section of the coolant inflow channel 21YZ surface is smaller near the chip substrate microchannel layer 1, which accelerates the flow rate of the coolant when flowing toward the substrate microchannel 11, thereby improving the heat exchange efficiency of the coolant.

[0051] Preferred Option 2:

[0052] The cross-section of the substrate microchannel 11XZ surface is trapezoidal, and along the X direction, the dimension on the side away from the distributed flow pattern layer 2 is d1′, and the dimension on the side close to the distributed flow pattern layer 2 is d1″, d1″>d1′, and d1″:d1′=10:(7-9); the cross-section of the coolant discharge channel 22XY surface is trapezoidal, and along the Y direction, the dimension d3′ on the side close to the coolant outlet is smaller than the dimension d3″ on the side away from the coolant outlet, and satisfies d3″:d1″=10:(1-3), d3″:d3′=10:(6-8). At the same time, the cross-section of the coolant inlet channel 21YZ surface is rectangular, and satisfies d2:d1″=10:(1-3); the trapezoidal cross-section design of the substrate microchannel 11XZ surface increases the heat exchange time, and the cross-section design of the coolant discharge channel 22XY surface reduces the coolant outlet, which also increases the heat exchange efficiency.

[0053] It is understandable that the cross section of the substrate microchannel 11XZ plane may be rectangular, the cross section of the coolant discharge channel 22XY plane may be trapezoidal, or the cross section of the coolant inflow channel 21YZ plane may be trapezoidal.

[0054] In this embodiment, the coolant flows in the following direction: the coolant enters the coolant inlet channel 21 from the multiple coolant inlets of the bottom plate layer, flows along the Z direction to each substrate microchannel 11, exchanges heat with the heat transferred to the substrate microchannel 11 and the distributed flow pattern layer 2, and then flows to both sides along the Y direction in the substrate microchannel 11 to the coolant discharge channel 22, and flows out along the coolant outlet located on the YZ plane of the coolant discharge channel 22. The coolant flows out after a brief heat exchange in the substrate microchannel 11, shortening the effective heat exchange distance. At the same time, because the substrate microchannel 11 is perpendicular to the extension direction of the coolant inlet channel 21, the initial temperature of the coolant entering the substrate microchannel 11 is similar, the heat exchange efficiency is similar, and the heat dissipation is more uniform.

[0055] This embodiment also provides a semiconductor laser using the above-mentioned distributed flow type heat sink based on the semiconductor laser chip substrate microchannel.

[0056] With 1000W / cm 2 Taking a 2mm*10mm chip with high heat flux density as an example, the coolant flow rate is 0.35L / min, the width d1 of the substrate microchannel 11 is 10μm, h1 is 70μm, the width d2 of the coolant inlet channel 21 and the coolant outlet channel 22 of the distributed flow layer 2 is 0.2mm, the depth h2 is 0.3mm, and copper is used. The average temperature rise is 34°C. The average temperature rise of the self-cooling chip structure with the same structure is 37°C, which is reduced by 3°C, a reduction of 8.1%. At the same time, the driving pressure of the structure is reduced from 875kPa to 156kPa, a reduction of 82%.

Claims

1. A distributed flow heat sink based on semiconductor laser chip substrate microchannels, characterized by: It comprises a chip substrate microchannel layer (1), a distributed flow pattern layer (2) and a bottom plate layer which are arranged in sequence; The semiconductor laser chip is defined as having a width direction of X, a length direction of Y, and a height direction of Z; the chip substrate microchannel layer (1) includes a plurality of substrate microchannels (11) extending along the Y direction, a first partition wall (12) is formed between the substrate microchannels (11), a dimension of the substrate microchannels (11) along the Y direction is L1, a dimension along the X direction is d1, and a dimension along the Z direction is h1, wherein L1 is greater than or equal to the dimension of the chip active area along the Y direction; The bottom plate layer is provided with a plurality of coolant inlets; The distributed flow pattern layer (2) comprises a distributed flow pattern area and an edge area for welding; the distributed flow pattern area comprises a plurality of alternately arranged coolant inflow channels (21) and coolant discharge channels (22); a second partition wall (23) is provided between the coolant inflow channels (21) and the coolant discharge channels (22); an XY end face of the second partition wall (23) is fixedly connected to a portion where the XY end face of the first partition wall (12) meets; The cooling liquid inflow channel (21) extends along the X direction and penetrates the distributed flow pattern layer (2) along the Z direction. One end of the cooling liquid inflow channel (21) located on the XY plane communicates with each substrate microchannel (11). Another end of the cooling liquid inflow channel (21) located on the XY plane communicates with a corresponding cooling liquid inlet on the bottom plate layer. The cooling liquid discharge channel (22) extends along the X direction and penetrates the distributed flow pattern layer (2) along the Z direction. One port of the cooling liquid discharge channel (22) located on the XY plane is communicated with each substrate microchannel (11). The bottom plate layer seals and covers the other port of the cooling liquid discharge channel (22) located on the XY plane. The port of the cooling liquid discharge channel (22) located on the YZ plane serves as a cooling liquid outlet. The cooling liquid inflow channel (21) has a size L2 along the X direction, a size d2 along the Y direction, and a size h2 along the Z direction, wherein L2 is greater than or equal to the size of the chip active area along the X direction; The cooling liquid discharge channel (22) has a size of L3 along the X direction, a size of d3 along the Y direction, and a size of h3 along the Z direction, wherein L3 is greater than L2, and h2=h3.

2. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 1, characterized in that: The cross section of the substrate microchannel (11) in the XZ plane is rectangular, and the dimension d1 of the substrate microchannel (11) along the X direction and the dimension h1 along the Z direction satisfy d1:h1=1:(7-12); The dimension d2 of the coolant inflow channel (21) along the Y direction is equal to the dimension d3 of the coolant discharge channel (22) along the Y direction. The cross-sections of the coolant inflow channel (21) and the coolant discharge channel (22) on the YZ plane are rectangular and satisfy d2:d1=10:(1-3) and d3:d1=10:(1-3).

3. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 2, characterized in that: The dimensions d2 and d3 of the coolant inflow channel (21) and the coolant discharge channel (22) along the Y direction are 0.1-0.5 mm; The dimensions h2 and h3 of the coolant inflow channel (21) and the coolant discharge channel (22) along the Z direction are 0.3-1 mm.

4. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 1, characterized in that: The cross section of the substrate microchannel (11) on the XZ plane is trapezoidal, and along the X direction, the size of the side away from the distributed flow pattern layer (2) is d1′, and the size of the side close to the distributed flow pattern layer (2) is d1″, d1″>d1′ and d1″:d1′=10:(7-9).

5. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 4, characterized in that: The cross section of the cooling liquid inflow channel (21) on the YZ plane is a trapezoid, and along the Y direction, the dimension d2′ on the side close to the substrate microchannel (11) is smaller than the dimension d2″ on the side away from the substrate microchannel (11), and satisfies d2″:d1″=10:(1-3); at the same time, the cross section of the cooling liquid discharge channel (22) on the XY plane is a rectangle, and satisfies d3:d1″=10:(1-3); Alternatively, the cross section of the coolant discharge channel (22) in the XY plane is a trapezoid, and along the Y direction, the dimension d3′ on the side close to the coolant outlet is smaller than the dimension d3″ on the side away from the coolant outlet, and satisfies d3″:d1″=10:(1-3); at the same time, the cross section of the coolant inlet channel (21) in the YZ plane is a rectangle, and satisfies d2:d1″=10:(1-3).

6. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 5, characterized in that: The coolant flows into the trapezoidal cross section of the YZ plane of the channel (21), d2″:d2′=10:(7-9); In the trapezoidal cross section of the cooling liquid discharge channel (22) on the XY plane, d3″:d3′=10:(6-8).

7. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 6, characterized in that: The distributed flow layer (2) is made of copper, copper tungsten or silicon.

8. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 7, characterized in that: Each cooling liquid inflow channel (21) and cooling liquid discharge channel (22) in the distributed flow pattern area forms a hollow area, and the volume of the hollow area accounts for 30-60% of the volume of the distributed flow pattern area.

9. The distributed flow type heat sink based on semiconductor laser chip substrate microchannel according to claim 8, characterized in that: The volume of the hollow area accounts for 45-60% of the volume of the distributed flow pattern area.

10. A semiconductor laser comprising a semiconductor laser chip and a heat sink disposed on the semiconductor laser chip, characterized in that: The heat sink is a distributed flow type heat sink based on a semiconductor laser chip substrate microchannel as described in any one of claims 1 to 9.

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