Semiconductor light-emitting device and method for manufacturing the same

Abstract

A semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device. The method for manufacturing the semiconductor light-emitting device includes: forming a dielectric layer (2) on a substrate (1), and a plurality of openings (201) (S1OO) exposing the substrate (1) are provided in the dielectric layer (2); using the dielectric layer (2) as a mask, epitaxially growing on the substrate (1) to form a first mirror (3) in each of the openings (201) of the dielectric layer (2) (S110); growing a light-emitting structure (4) on a side of the first mirror (3) away from the substrate (1) (Sl20); forming a second mirror (5) on a side of the light-emitting structure (4) away from the first mirror (3) (Sl30). The manufacturing process can be simplified.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technologies, and particularly to a semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device. Background Art

[0002] In recent years, as a new generation of green light sources, semiconductor light-emitting devices are widely used in fields such as lighting, backlighting, display, and indication.

[0003] In order to improve the performance of semiconductor light-emitting devices, a resonant cavity is often formed in the semiconductor light-emitting devices. Among them, in the process of manufacturing a semiconductor light-emitting device with a resonant cavity, a first mirror, a light-emitting structure, and a second mirror are often formed on a substrate in sequence. However, in order to form multiple semiconductor light-emitting devices, it is also necessary to pattern the first mirror, and the manufacturing process is relatively complex. Summary of the Invention

[0004] An object of the present disclosure is to provide a semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device, which can simplify the manufacturing process.

[0005] According to one aspect of the present disclosure, there is provided a method for manufacturing a semiconductor light-emitting device, including:

[0006] Forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate;

[0007] Using the dielectric layer as a mask, performing epitaxial growth on the substrate to form a first mirror in each of the openings of the dielectric layer;

[0008] Growing a light-emitting structure on a side of the first mirror away from the substrate;

[0009] Forming a second mirror on a side of the light-emitting structure away from the first mirror.

[0010] Further, the second mirror is a Bragg mirror or a metal mirror.

[0011] Further, when the second mirror is a Bragg mirror, before forming the second mirror, the manufacturing method further includes:

[0012] Forming an ITO layer on a side of the light-emitting structure away from the first mirror, and the second mirror is formed on a surface of the ITO layer facing away from the first mirror.

[0013] Further, surfaces of the light-emitting structures facing away from the substrate are flush with a surface of the dielectric layer facing away from the substrate, and a plurality of the light-emitting structures share one ITO layer.

[0014] Further, after forming a second mirror on a side of the light-emitting structure away from the first mirror, the manufacturing method further includes:

[0015] Forming a support layer covering the second mirror and the dielectric layer;

[0016] Removing the substrate.

[0017] Further, a buffer layer is provided between the substrate and the first mirror, and removing the substrate includes:

[0018] Removing the substrate and the buffer layer;

[0019] After removing the substrate and the buffer layer, the manufacturing method further includes:

[0020] Flattening a surface of the dielectric layer facing away from the support layer with a surface of the first mirror facing away from the support layer.

[0021] Further, after removing the substrate, the manufacturing method further includes:

[0022] Patterning the dielectric layer so that the dielectric layer forms a plurality of cylindrical members, and the plurality of cylindrical members respectively surround the plurality of openings.

[0023] Further, the light-emitting structure includes a light-emitting layer, the light-emitting layer includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer which are stacked, and after removing the substrate, the manufacturing method further includes:

[0024] Forming a first electrode electrically connected to the first-conductivity-type semiconductor layer and a second electrode electrically connected to the second-conductivity-type semiconductor layer.

[0025] Further, the first electrode and the second electrode are on the same side of the support layer; or

[0026] The first electrode and the second electrode are on two sides of the support layer, and the material of the support layer is a conductive material.

[0027] Further, the first mirror is a Bragg mirror.

[0028] Further, the first mirror is a porous conductive structure, the porous conductive structure includes first porous conductive layers and second porous conductive layers which are alternately stacked after electrochemical corrosion, a plurality of first holes are formed in the first porous conductive layers, a plurality of second holes are formed in the second porous conductive layers, and diameters of the first holes are different from diameters of the second holes.

[0029] Further, the material of the dielectric layer is silicon oxide, and the material of the first mirror is a group III-V semiconductor material.

[0030] Further, the light-emitting structure includes an oxide layer, and the oxide layer includes a low-resistance region and a high-resistance region surrounding the low-resistance region.

[0031] According to one aspect of the present disclosure, there is provided a semiconductor light-emitting device, which is prepared by the preparation method of the semiconductor light-emitting device described above.

[0032] In the semiconductor light-emitting device and the preparation method of the semiconductor light-emitting device of the present disclosure, the dielectric layer has a plurality of openings, and the first mirror is grown using the dielectric layer as a mask, so that the first mirror is formed in each opening to form a plurality of first mirrors arranged at intervals, and there is no need to perform a patterning step for the first mirror, which simplifies the preparation process of the semiconductor light-emitting device; in an alternative embodiment, the surface of each light-emitting structure facing away from the substrate is flush with the surface of the dielectric layer facing away from the substrate, that is, each light-emitting structure is also located in each opening, which means that a plurality of light-emitting structures arranged at intervals are formed without etching, avoiding damage to the light-emitting structures during the deep etching process through the PN junction; in an alternative embodiment, the first electrode and the second electrode are located on both sides of the support layer, and the material of the support layer is a conductive material, that is, the semiconductor light-emitting device has a vertical electrode structure, improving the electrostatic discharge ability of the device. Description of the Drawings

[0033] Figure 1 is a flowchart of the preparation method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0034] Figure 2 is a schematic diagram after step S100 in the preparation method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0035] Figure 3 is a schematic diagram after step S110 in the preparation method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0036] Figure 4 is a schematic diagram of the first mirror in the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0037] Figure 5 is a schematic diagram after step S120 in the preparation method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0038] Figure 6 is a schematic diagram after step S130 in the preparation method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0039] Figure 7It is a schematic diagram after the completion of step S140 in the manufacturing method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0040] Figure 8 It is a schematic diagram after the completion of step S150 in the manufacturing method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0041] Figure 9 is Figure 8 A schematic diagram after the structure shown is polished;

[0042] Figure 10 It is a schematic diagram after the completion of step S160 in the manufacturing method of the semiconductor light-emitting device according to Embodiment 1 of the present disclosure;

[0043] Figure 11 It is a schematic diagram of the semiconductor light-emitting device according to Embodiment 2 of the present disclosure;

[0044] Figure 12 It is a schematic diagram of the semiconductor light-emitting device according to Embodiment 3 of the present disclosure;

[0045] Figure 13 It is another schematic diagram of the semiconductor light-emitting device according to Embodiment 3 of the present disclosure;

[0046] Figure 14 It is a schematic diagram of the semiconductor light-emitting device according to Embodiment 5 of the present disclosure;

[0047] Figure 15 It is another schematic diagram of the semiconductor light-emitting device according to Embodiment 5 of the present disclosure.

[0048] Explanation of reference numerals: 1, substrate; 2, dielectric layer; 201, opening; 202, cylindrical member; 3, first reflector; 301, first porous conductive layer; 302, second porous conductive layer; 4, light-emitting structure; 40, light-emitting layer; 401, first conductive type semiconductor layer; 402, active layer; 403, second conductive type semiconductor layer; 41, oxide layer; 5, second reflector; 6, buffer layer; 7, ITO layer; 8, support layer; 801, metal bonding layer; 802, heavily doped silicon substrate; 9, second electrode; 10, first electrode; 11, metal protection layer. Detailed Description of the Embodiments

[0049] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. On the contrary, they are merely examples of devices consistent with some aspects of the present disclosure as detailed in the appended claims.

[0050] Embodiment 1

[0051] Embodiment 1 of the present disclosure provides a semiconductor light-emitting device and a method for manufacturing the semiconductor light-emitting device. As Figure 1 shown, the method for manufacturing the semiconductor light-emitting device may include step S100 to step S130, where:

[0052] Step S100: Form a dielectric layer on a substrate, and the dielectric layer is provided with a plurality of openings exposing the substrate.

[0053] Step S110: Use the dielectric layer as a mask to perform epitaxial growth on the substrate to form a first mirror in each opening of the dielectric layer.

[0054] Step S120: Grow a light-emitting structure on a side of the first mirror away from the substrate.

[0055] Step S130: Form a second mirror on a side of the light-emitting structure away from the first mirror.

[0056] In the method for manufacturing the semiconductor light-emitting device according to Embodiment 1 of the present disclosure, the dielectric layer has a plurality of openings, and the first mirror is grown using the dielectric layer as a mask, so that the first mirror is formed in each opening to form a plurality of first mirrors arranged at intervals, and there is no need to perform a patterning step on the first mirror, simplifying the manufacturing process of the semiconductor light-emitting device.

[0057] The following will elaborate on each step of the method for manufacturing the semiconductor light-emitting device according to Embodiment 1 of the present disclosure:

[0058] In step S100, a dielectric layer is formed on a substrate, and the dielectric layer is provided with a plurality of openings exposing the substrate.

[0059] As Figure 2 shown, the substrate 1 may be a silicon substrate. Of course, the substrate 1 may also be a silicon carbide substrate, but the embodiments of the present disclosure are not limited thereto, and the substrate 1 may also be a sapphire substrate. The material of the dielectric layer 2 may be silicon oxide, such as SiO2. In the thickness direction of the dielectric layer 2, the opening 201 penetrates the dielectric layer 2. The number of the openings 201 may be two, four or more, and the plurality of openings 201 are arranged at intervals. For example, step S100 may include: forming a dielectric material layer on a substrate 1; patterning the dielectric material layer to form a dielectric layer 2 provided with an opening 201 exposing the substrate 1. Among them, the dielectric material layer may be prepared by chemical vapor deposition. Of course, it may also be prepared by other means. The embodiments of the present disclosure may pattern the dielectric material layer through a photolithography process.

[0060] In step S110, use the dielectric layer as a mask to perform epitaxial growth on the substrate to form a first mirror in each opening of the dielectric layer.

[0061] As Figure 3 shown, in the embodiments of the present disclosure, epitaxial growth can be performed on the substrate 1 by atomic layer deposition. Of course, epitaxial growth can also be performed on the substrate 1 by chemical vapor deposition, but the embodiments of the present disclosure are not limited thereto. The first mirror 3 can be a Bragg mirror. Further, the first mirror 3 that is a Bragg mirror can be a porous conductive structure. As Figure 4 shown, the porous conductive structure can include first porous conductive layers 301 and second porous conductive layers 302 that are alternately stacked after electrochemical etching. A plurality of first holes can be formed in the first porous conductive layer 301, a plurality of second holes can be formed in the second porous conductive layer 302, and the diameters of the first holes and the second holes are different. Among them, the refractive index difference between the first porous conductive layer 301 and the second porous conductive layer 302 is large, which improves the reflectivity of the first mirror 3. The material of the first mirror 3 can be a group III-V semiconductor material. Taking the first mirror 3 including alternately stacked first porous conductive layers 301 and second porous conductive layers 302 as an example, both the first porous conductive layer 301 and the second porous conductive layer 302 are gallium nitride-based materials. For example, the material of the first porous conductive layer 301 is n-type GaN or n-type AlInGaN, and the material of the second porous conductive layer 302 is u-type GaN or u-type AlInGaN. In addition, before forming the first mirror 3, in the embodiments of the present disclosure, a buffer layer 6 can be formed in each opening 201 of the dielectric layer 2, and the first mirror 3 is formed on a side of the buffer layer 6 facing away from the substrate 1.

[0062] In step S120, a light-emitting structure is grown on a side of the first mirror away from the substrate.

[0063] As Figure 5 shown, the light-emitting structure 4 can include a light-emitting layer 40. The light-emitting layer 40 can include a first conductivity type semiconductor layer 401, an active layer 402, and a second conductivity type semiconductor layer 403 that are stacked. The active layer 402 can be at least one of a single quantum well structure, a multi-quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. Taking the active layer 402 as a multi-quantum well structure as an example, the active layer 402 can include alternately arranged potential well layers and potential barrier layers. The first conductivity type is different from the second conductivity type. The first conductivity type semiconductor layer 401 can be a p-type semiconductor layer, and the second conductivity type semiconductor layer 403 can be an n-type semiconductor layer, but the embodiments of the present disclosure do not make special limitations thereto. In addition, the surfaces of the respective light-emitting structures 4 in each opening 201 facing away from the substrate 1 can be flush with the surface of the dielectric layer 2 facing away from the substrate 1. In the related art, deep etching through the PN junction of the light-emitting structure 4 is required to change one light-emitting structure 4 into multiple ones. Each light-emitting structure 4 in the embodiments of the present disclosure is correspondingly located at Figure 2In each opening 201 of the structure shown, damage to the light-emitting structure 4 during the deep etching process through the PN junction is avoided.

[0064] In step S130, a second mirror is formed on the side of the light-emitting structure away from the first mirror.

[0065] As Figure 6 shown, the reflectivity of the second mirror 5 may be less than that of the first mirror 3, but the embodiments of the present disclosure do not make special limitations thereto. The second mirror 5 may be a Bragg mirror, and the material may be a group of multi-periodic materials selected from the material group including TiO2 / SiO2, Ti3O5 / SiO2, Ta2O5 / SiO2, Ti3O5 / Al2O3, ZrO2 / SiO2, or TiO2 / Al2O3, etc., but the embodiments of the present disclosure are not limited thereto. Before forming the second mirror 5, this embodiment may further include: forming an ITO layer 7 on the side of the light-emitting structure 4 away from the first mirror 3. The second mirror 5 is formed on the surface of the ITO layer 7 facing away from the first mirror 3. Taking the surface of each light-emitting structure 4 facing away from the substrate 1 and the surface of the dielectric layer 2 facing away from the substrate 1 being flush as an example, a plurality of light-emitting structures 4 may share one ITO layer 7.

[0066] After forming the second mirror 5, as Figure 1 shown, the preparation method of the embodiments of the present disclosure may further include:

[0067] Step S140, forming a support layer covering the second mirror and the dielectric layer.

[0068] As Figure 7 shown, the material of the support layer 8 may be a conductive material, that is, the support layer 8 may be a conductor. The support layer 8 may be in contact with the ITO layer 7, and the second mirror 5 is coated between the support layer 8 and the ITO layer 7. The support layer 8 may include a heavily doped silicon substrate 802 and a metal bonding layer 801. The heavily doped silicon substrate 802 may be located on the side of the metal bonding layer 801 facing away from the dielectric layer 2.

[0069] Step S150, removing the substrate.

[0070] As Figure 7 and Figure 8 shown, the substrate 1 may be removed by a laser lift-off process, but the embodiments of the present disclosure are not limited thereto. Taking a buffer layer 6 being provided between the substrate 1 and the first mirror 3 as an example, removing the substrate 1 may include: removing the substrate 1 and the buffer layer 6. After removing the substrate 1 and the buffer layer 6, the preparation method of the embodiments of the present disclosure may further include: as Figure 9As shown, the surface of the dielectric layer 2 facing away from the support layer 8 is flush with the surface of the first mirror 3 facing away from the support layer 8. Among them, in the embodiments of the present disclosure, the surface of the dielectric layer 2 facing away from the support layer 8 can be polished so that the surface of the dielectric layer 2 facing away from the support layer 8 is flush with the surface of the first mirror 3 facing away from the support layer 8.

[0071] Step S160: Pattern the dielectric layer so that the dielectric layer forms a plurality of cylindrical members, and the plurality of cylindrical members respectively surround a plurality of openings.

[0072] As Figure 10 shown, in the embodiments of the present disclosure, the dielectric layer 2 can be patterned by a photolithography process. The cylindrical member 202 can act as an insulating protective layer to protect the sidewalls of the light-emitting device, reducing the steps of manufacturing the insulating protective layer and saving costs.

[0073] Embodiment 1 of the present disclosure also provides a semiconductor light-emitting device. This semiconductor light-emitting device is prepared by the preparation method of the above-mentioned semiconductor light-emitting device. Therefore, it has the same beneficial effects, which will not be elaborated herein.

[0074] Embodiment 2

[0075] The semiconductor light-emitting device and the preparation method of the semiconductor light-emitting device in Embodiment 2 of the present disclosure are substantially the same as those of the semiconductor light-emitting device and the preparation method of the semiconductor light-emitting device in Embodiment 1 of the present disclosure, except for the second mirror. As Figure 11 shown, the second mirror 5 in Embodiment 2 of the present disclosure is a metal mirror. The material of the metal mirror can be Ag, Ni / Ag / Ni, etc. Further, in order to prevent the second mirror 5 from being oxidized, a metal protective layer 11 covering the second mirror 5 can also be formed in Embodiment 2 of the present disclosure. The material of the metal protective layer 11 can be Ni, TiW, Pt, etc. The above-mentioned support layer 8 can cover the metal protective layer 11.

[0076] Embodiment 3

[0077] The semiconductor light-emitting device and the preparation method of the semiconductor light-emitting device in Embodiment 3 of the present disclosure are substantially the same as those of the semiconductor light-emitting device and the preparation method of the semiconductor light-emitting device in Embodiment 1 or Embodiment 2 of the present disclosure, except that: As Figure 12 and Figure 13As shown, a first electrode 10 electrically connected to the first-conductivity-type semiconductor layer 401 and a second electrode 9 electrically connected to the second-conductivity-type semiconductor layer 403 are also formed. Taking the material of the support layer 8 as a conductive material as an example, the first electrode 10 and the second electrode 9 can be located on both sides of the support layer 8. Specifically, the first electrode 10 can be disposed on the surface of the support layer 8 facing away from the light-emitting structure 4, and the second electrode 9 can be disposed on the surface of the first mirror 3 facing away from the light-emitting structure 4. Based on this, the first electrode 10 and the second electrode 9 are located on both sides of the light-emitting structure 4. The semiconductor light-emitting device of the third embodiment of the present disclosure can be a resonant cavity LED. Taking the first-conductivity-type semiconductor layer 401 as a p-type semiconductor layer and the second-conductivity-type semiconductor layer 403 as an n-type semiconductor layer as an example, the first electrode 10 is a p-type electrode, and the second electrode 9 is an n-type electrode. The materials of the first electrode 10 and the second electrode 9 can both be selected from at least one of gold, silver, aluminum, chromium, nickel, platinum, and titanium.

[0078] Embodiment Four

[0079] The semiconductor light-emitting device and the manufacturing method of the semiconductor light-emitting device according to the fourth embodiment of the present disclosure are substantially the same as those of the semiconductor light-emitting device and the manufacturing method of the semiconductor light-emitting device according to the third embodiment of the present disclosure, except that: the first electrode and the second electrode are located on the same side of the support layer. Specifically, both the first electrode and the second electrode are located on the side of the first-conductivity-type semiconductor layer away from the second mirror. Among them, the first electrode can be disposed on the surface of the first-conductivity-type semiconductor layer facing away from the second mirror, and the second electrode can be disposed on the surface of the first mirror facing away from the light-emitting structure. The semiconductor light-emitting device in the fourth embodiment of the present disclosure is also a resonant cavity LED.

[0080] Embodiment Five

[0081] The semiconductor light-emitting device and the manufacturing method of the semiconductor light-emitting device according to the fifth embodiment of the present disclosure are substantially the same as those of the semiconductor light-emitting device and the manufacturing method of the semiconductor light-emitting device according to the third or fourth embodiment of the present disclosure, except for the light-emitting structure. As Figure 14 and Figure 15 shown, the light-emitting structure 4 of the fifth embodiment of the present disclosure can include an oxide layer 41. The oxide layer 41 can be stacked with the above-mentioned light-emitting layer 40. The oxide layer 41 can include a low-resistance region and a high-resistance region. The high-resistance region surrounds the low-resistance region, and the low-resistance region forms a current aperture, that is, an internal current window, so that the light-emitting device of the fifth embodiment of the present disclosure constitutes a vertical cavity surface emitting laser (VCSEL). Among them, the low-resistance region also forms an optical path of the vertical cavity surface emitting laser.

[0082] As Figure 14 and Figure 15As shown, taking the light-emitting layer 40 including a first-conductivity-type semiconductor layer 401, an active layer 402, and a second-conductivity-type semiconductor layer 403 that are stacked as an example, the oxide layer 41 may also be located on the side of the second-conductivity-type semiconductor layer 403 away from the active layer 402. Additionally, the oxide layer 41 may also be located in the active layer 402. Among them, the number of the oxide layers 41 may be multiple. Taking the number of the oxide layers 41 being two as an example, one oxide layer 41 may be located in the active layer 402, and the other oxide layer 41 may be located on the side of the second-conductivity-type semiconductor layer 403 away from the active layer 402. The oxide layer 41 in the embodiments of the present disclosure may be obtained by oxidizing a single-layer structure of AlInN, AlGaAs, AlAs, or AlN, or by oxidizing AlInN / GaN, AlN / GaN, AlGaAs / GaN, or AlAs / GaN.

[0083] The above are only the preferred embodiments of the present disclosure and do not impose any formal restrictions on the present disclosure. Although the present disclosure has been disclosed above in the preferred embodiments, it is not intended to limit the present disclosure. Any person skilled in the art, within the scope of the technical solution of the present disclosure, may make some changes or modifications to the above-disclosed technical content to obtain equivalent embodiments with equivalent changes. However, as long as the content does not depart from the technical solution of the present disclosure, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present disclosure still fall within the scope of the technical solution of the present disclosure.

Claims

1. A method for preparing a semiconductor light-emitting device, characterized in that Comprising: Forming a dielectric layer (2) on a substrate (1), the dielectric layer (2) being provided with a plurality of openings (201) exposing the substrate (1); Using the dielectric layer (2) as a mask, epitaxially growing the substrate (1) to form a first mirror (3) in each of the openings (201) of the dielectric layer (2); Growing a light-emitting structure (4) on a side of the first mirror (3) away from the substrate (1), the light-emitting structure (4) being located inside each of the openings (201) of the dielectric layer (2); Forming a second mirror (5) on a side of the light-emitting structure (4) away from the first mirror (3); Before forming the second mirror (5), the manufacturing method further includes: forming an ITO layer (7) on a side of the light-emitting structure (4) away from the first mirror (3), and the second mirror (5) is formed on a surface of the ITO layer (7) facing away from the first mirror (3).

2. The manufacturing method of the semiconductor light-emitting device according to claim 1, characterized in that, The second mirror (5) is a Bragg mirror or a metal mirror.

3. The manufacturing method of the semiconductor light-emitting device according to claim 2, wherein, A surface of each of the light-emitting structures (4) facing away from the substrate (1) is flush with a surface of the dielectric layer (2) facing away from the substrate (1), and a plurality of the light-emitting structures (4) share one ITO layer (7).

4. The manufacturing method of the semiconductor light-emitting device according to claim 1, characterized in that, After forming the second mirror (5) on a side of the light-emitting structure (4) away from the first mirror (3), the manufacturing method further includes: Forming a support layer (8) covering the second mirror (5) and the dielectric layer (2); Removing the substrate (1).

5. The manufacturing method of the semiconductor light-emitting device according to claim 4, characterized in that, A buffer layer (6) is provided between the substrate (1) and the first mirror (3), and removing the substrate (1) includes: Removing the substrate (1) and the buffer layer (6); After removing the substrate (1) and the buffer layer (6), the manufacturing method further includes: Making a surface of the dielectric layer (2) facing away from the support layer (8) flush with a surface of the first mirror (3) facing away from the support layer (8).

6. The manufacturing method of the semiconductor light-emitting device according to claim 5, characterized in that, After removing the substrate (1), the manufacturing method further includes: Patterning the dielectric layer (2) so that the dielectric layer (2) forms a plurality of cylindrical members (202), and the plurality of cylindrical members (202) respectively surround the plurality of openings (201).

7. The manufacturing method of the semiconductor light-emitting device according to claim 4, characterized in that, The light-emitting structure (4) includes a light-emitting layer (40), the light-emitting layer (40) includes a first-conductivity-type semiconductor layer (401), an active layer (402), and a second-conductivity-type semiconductor layer (403) which are stacked, and after removing the substrate (1), the manufacturing method further includes: Forming a first electrode (10) electrically connected to the first-conductivity-type semiconductor layer (401) and a second electrode (9) electrically connected to the second-conductivity-type semiconductor layer (403).

8. The method for manufacturing a semiconductor light-emitting device according to claim 7, wherein, The first electrode (10) and the second electrode (9) are on the same side of the support layer (8); or The first electrode (10) and the second electrode (9) are on two sides of the support layer (8), and the material of the support layer (8) is a conductive material.

9. The manufacturing method of the semiconductor light-emitting device according to claim 1, characterized in that, The first mirror (3) is a Bragg mirror.

10. The method for manufacturing a semiconductor light-emitting device according to claim 9, characterized in that, The first reflector (3) is a porous conductive structure, and the porous conductive structure includes first porous conductive layers (301) and second porous conductive layers (302) that are alternately stacked after electrochemical corrosion. A plurality of first holes are formed in the first porous conductive layers (301), a plurality of second holes are formed in the second porous conductive layers (302), and the diameters of the first holes are different from those of the second holes.

11. The manufacturing method of the semiconductor light-emitting device according to claim 1, characterized in that, The material of the dielectric layer (2) is silicon oxide, and the material of the first reflector (3) is a group III-V semiconductor material.

12. The manufacturing method of the semiconductor light-emitting device according to claim 1, characterized in that, The light-emitting structure (4) includes an oxide layer (41), and the oxide layer (41) includes a low-resistance region and a high-resistance region surrounding the low-resistance region.

13. A semiconductor light-emitting device, characterized in that, The semiconductor light-emitting device is prepared by the preparation method of the semiconductor light-emitting device according to any one of claims 1-12.

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