A photoresist stripping solution, its preparation method and application

Abstract

The application discloses a photoresist stripping liquid and a preparation method and application thereof, and belongs to the technical field of photoresist cleaning. According to mass fractions, the photoresist stripping liquid comprises 40.00-70.00 parts of an alcohol ether solvent, 25.00-55.00 parts of an amide solvent, 1.00-20.00 parts of an alkanolamine, 0.10-2.00 parts of a pH regulator and 0.01-2.00 parts of a metal protective agent. The photoresist stripping liquid is a water-based stripping liquid without environment-hazardous organic solvents, can effectively inhibit Al metal layer corrosion, and avoids the corrosion problem of glass substrate metal wiring through the use of the pH regulator. Meanwhile, the stripping liquid does not contain a surfactant, thereby solving the problem of large foam in the stripping liquid use process. The preparation method of the photoresist stripping liquid is simple, and each component can be directly mixed according to the proportioning.

Description

Technical Field

[0001] This invention relates to the field of photoresist cleaning technology, and more specifically, to a photoresist stripping solution, its preparation method, and its application. Background Technology

[0002] In current TFT (Thin Film Transistor) and IC (Integrated Circuit) processes, a layer of photoresist is typically spin-coated onto a glass substrate or silicon wafer, followed by exposure and development using a suitable photomask. Finally, depending on the properties of the photoresist (positive or negative), a corresponding photoresist stripper is used to remove the exposed or unexposed photoresist, forming a pattern in the desired areas.

[0003] Photoresist stripping solution is a commonly used wet electronic chemical in display panel and semiconductor manufacturing processes. It is used to remove photoresist and is mainly composed of organic amines, polar organic solvents and / or water.

[0004] Some of the water-based stripping fluids provided in the existing technology generate a large amount of foam during use. The large amount of foam generated will affect the process parameter settings and ultimately affect product quality and production costs; some will cause corrosion of the underlying metal.

[0005] In view of this, the present invention is proposed. Summary of the Invention

[0006] One of the objectives of this invention is to provide a photoresist stripping solution that can effectively inhibit the corrosion of the underlying Al metal layer, does not generate a large amount of foam during use, and is applicable to various Al processes.

[0007] The second objective of this invention is to provide a method for preparing the above-mentioned photoresist stripping solution.

[0008] A third objective of this invention is to provide an application of the above-mentioned photoresist stripping solution.

[0009] This application can be implemented as follows:

[0010] In a first aspect, this application provides a photoresist stripping solution, which, by mass parts, comprises 40.00-70.00 parts of alcohol ether solvent, 25.00-55.00 parts of amide solvent, 1.00-20.00 parts of alkanolamine, 0.10-2.00 parts of pH adjuster, and 0.01-2.00 parts of metal protectant; and the photoresist stripping solution does not contain surfactants.

[0011] Alcohol ether solvents are mainly used as the primary solvent for photoresists to dissolve them; amide solvents are mainly used to make the mixture system formed with alcohol ether solvents more stable, so that the photoresist molecules are more evenly dispersed in the mixture system, and to increase the limit of the stripping solution; alkanolamines are mainly used as stripping components for photoresists to remove them; pH adjusters are mainly used to adjust the pH value of the photoresist stripping solution system, so that the alkalinity of the entire photoresist stripping solution system is reduced as much as possible within the alkaline range, so as to reduce or avoid corrosion of the metal film, especially aluminum; metal protectants are mainly used to form corrosion-resistant complexes with metal wiring, protecting the metal wiring from corrosion by the stripping solution.

[0012] By compounding alcohol ether solvents, amide solvents, alkanolamines, pH adjusters, and metal protectants within the above-mentioned ranges, corrosion of the Al metal layer can be inhibited. Furthermore, this photoresist stripping solution does not contain surfactants, thus solving the problem of excessive foaming during use.

[0013] In an optional embodiment, the photoresist stripping solution comprises 45.00-65.00 parts of alcohol ether solvent, 30.00-50.00 parts of amide solvent, 2.00-7.00 parts of alkanolamine, 0.20-0.80 parts of pH adjuster, and 0.05-1.00 parts of metal protectant.

[0014] In an optional embodiment, the photoresist stripping solution comprises 50.00-60.00 parts of alcohol ether solvent, 35.00-45.00 parts of amide solvent, 2.00-7.00 parts of alkanolamine, 0.20-0.80 parts of pH adjuster, and 0.05-1.00 parts of metal protectant.

[0015] According to this preferred compounding relationship, the corrosion inhibition effect on the Al metal layer can be better achieved.

[0016] In optional embodiments, the alcohol ether solvent includes at least one of diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, ethylene glycol isopropyl ether, and ethylene glycol monobutyl ether.

[0017] Considering both the price of the materials and the dissolving ability of the photoresist, at least one of the above-mentioned materials is used as an alcohol ether solvent.

[0018] In optional embodiments, the amide solvent includes at least one of formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-(2-hydroxyethyl)acetamide, and 3-methoxy-N,N-dimethylpropionamide.

[0019] Taking into account the price of the substances, the uniformity of dispersion of the mixed solution system, and the solubility of the photoresist, at least one of the above substances is used as an amide solvent.

[0020] In optional embodiments, alkanolamines include at least one of 2-aminoethanol, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N-methyldiethanolamine, N,N-dimethylethanolamine, N,N-diethylaminoethanol, 2-(2-aminoethylamino)-1-ethanol, 1-amino-2-propanol, and 2-amino-1-propanol.

[0021] Considering both the price of the materials and the stripping ability of the photoresist, at least one of the above-mentioned materials is selected as an alkanolamine.

[0022] In an optional implementation, the pH adjuster includes organic acid compounds.

[0023] In an optional embodiment, the organic acid compound includes at least one selected from salicylic acid, sodium citrate, sodium acetate, succinic acid, malic acid, and tartaric acid.

[0024] Considering the buffering capacity of the mixture and the need to maintain the mixture in a weakly alkaline range, at least one of the above substances is used as an organic acid compound.

[0025] In an optional embodiment, the metal protectant includes at least one of aminophenol, toluidine, glycine, thiourea, and L-arginine.

[0026] Considering the rate of formation of corrosion-resistant complexes with metal wiring and the stability of the complexes, at least one of the above substances is used as a metal protectant.

[0027] In optional embodiments, alcohol ether solvents include diethylene glycol methyl ether; and / or amide solvents include N-methylformamide; and / or alkanolamines include N-methyldiethanolamine; and / or pH adjusters include sodium citrate; and / or metal protectants include L-arginine.

[0028] By selecting alcohol ether solvents, amide solvents, alkanolamines, organic acid compounds, and metal protectants respectively, a better effect on inhibiting the corrosion of Al metal layers can be achieved compared with the use of other substances.

[0029] In an optional embodiment, the photoresist stripping solution comprises 45.00-65.00 parts of diethylene glycol methyl ether, 30.00-50.00 parts of N-methylformamide, 2.00-7.00 parts of N-methyldiethanolamine, 0.20-0.80 parts of sodium citrate, and 0.05-1.00 parts of L-arginine.

[0030] The photoresist stripping solution corresponding to this solution can provide good protection for the underlying Al metal.

[0031] In other alternative embodiments, the photoresist stripping solution comprises 50.00-60.00 parts of diethylene glycol methyl ether, 35.00-45.00 parts of N-methylformamide, 2.00-7.00 parts of N-methyldiethanolamine, 0.20-0.80 parts of sodium citrate, and 0.05-1.00 parts of L-arginine.

[0032] The corresponding photoresist stripping solution can provide better protection for the underlying Al metal.

[0033] Secondly, this application provides a method for preparing a photoresist stripping solution as described in any of the foregoing embodiments, comprising the following steps: mixing the components according to the specified proportions.

[0034] Thirdly, this application provides the application of a photoresist stripping solution as described in any of the foregoing embodiments, wherein the photoresist stripping solution is used for the removal of photoresist in the Al process.

[0035] The beneficial effects of this application include:

[0036] The photoresist stripping solution provided in this application is a water-based stripping solution that does not contain environmentally harmful organic solvents. According to the specific composition and ratio range of this application, it can effectively inhibit the corrosion of Al metal layer. Furthermore, by using a pH adjuster, the corrosion problem of metal wiring on glass substrate is avoided. At the same time, the components do not contain surfactants, which solves the problem of excessive foaming during the use of the stripping solution. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 The image shown is a SEM image of the DIP corrosion test corresponding to Example 1 in the experimental case.

[0039] Figure 2 This is a SEM image of the DIP corrosion test corresponding to Example 2 in the experimental case;

[0040] Figure 3 This is a SEM image of the DIP corrosion test corresponding to Example 3 in the experimental cases;

[0041] Figure 4This is a SEM image of the DIP corrosion test corresponding to Example 4 in the experimental cases;

[0042] Figure 5 This is a SEM image of the DIP corrosion test corresponding to Example 5 in the experimental cases;

[0043] Figure 6 This is a SEM image of the DIP corrosion test corresponding to Example 6 in the experimental cases;

[0044] Figure 7 This is a SEM image of the DIP corrosion test results for Comparative Example 1 in the experimental cases.

[0045] Figure 8 The image shown is a SEM image of the DIP corrosion test results for Comparative Example 2 in the experimental case. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0047] The following provides a detailed description of the photoresist stripping solution, its preparation method, and its application provided in this application.

[0048] This application discloses a photoresist stripping solution, which, by mass percentage, comprises 40.00-70.00 parts of alcohol ether solvent, 25.00-55.00 parts of amide solvent, 1.00-20.00 parts of alkanolamine, 0.10-2.00 parts of pH adjuster, and 0.01-2.00 parts of metal protectant; and the photoresist stripping solution does not contain surfactant.

[0049] For reference, the amount of alcohol ether solvent can be 40.00 parts, 42.00 parts, 45.00 parts, 48.00 parts, 50.00 parts, 52.00 parts, 55.00 parts, 58.00 parts, 60.00 parts, 62.00 parts, 65.00 parts, 68.00 parts, or 70.00 parts, or any other value within the range of 40.00 parts to 70.00 parts.

[0050] In some preferred embodiments, the amount of alcohol ether solvent used is 45.00 parts to 65.00 parts, such as 45.00 parts, 46.00 parts, 47.00 parts, 48.00 parts, 49.00 parts, 50.00 parts, 51.00 parts, 52.00 parts, 53.00 parts, 54.00 parts, 55.00 parts, 56.00 parts, 57.00 parts, 58.00 parts, 59.00 parts, 60.00 parts, 61.00 parts, 62.00 parts, 63.00 parts, 64.00 parts, or 65.00 parts. In some more preferred embodiments, the amount of alcohol ether solvent used is 50.00 parts to 60.00 parts.

[0051] Setting the amount of alcohol ether solvent in the range of 50.00-60.00 parts allows the photoresist to be completely dissolved. When the amount of alcohol ether solvent is less than 50.00 parts, the photoresist that has been completely stripped cannot be completely dissolved, and some remains on the glass substrate. When the amount of alcohol ether solvent is more than 60.00 parts, although the stripped photoresist can be completely dissolved, the mass concentration of alkanolamine is low at this time, and the photoresist on the surface of the metal film cannot be completely stripped. Excessive alcohol ether solvent content will also increase the production and use costs of the product.

[0052] That is, in this application, alcohol ether solvents are mainly used as the primary solvent for photoresist to dissolve it. Considering both the price of the materials and the dissolving power of the photoresist, alcohol ether solvents may, for example, include at least one of diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, ethylene glycol isopropyl ether, and ethylene glycol monobutyl ether.

[0053] For reference, the amount of amide solvent can be 25.00 parts, 28.00 parts, 30.00 parts, 32.00 parts, 35.00 parts, 38.00 parts, 40.00 parts, 42.00 parts, 45.00 parts, 48.00 parts, 50.00 parts, 52.00 parts, or 55.00 parts, or any other value within the range of 25.00 parts to 55.00 parts.

[0054] In some preferred embodiments, the amount of amide solvent used is 30.00-50.00 parts, such as 30.00 parts, 31.00 parts, 32.00 parts, 33.00 parts, 34.00 parts, 35.00 parts, 36.00 parts, 37.00 parts, 38.00 parts, 39.00 parts, 40.00 parts, 41.00 parts, 42.00 parts, 43.00 parts, 44.00 parts, 45.00 parts, 46.00 parts, 47.00 parts, 48.00 parts, 49.00 parts, or 50.00 parts. In some more preferred embodiments, the amount of amide solvent used is 35.00-45.00 parts.

[0055] Setting the amount of amide solvent in the range of 35.00-45.00 parts can improve the stability of the mixture system. If the amount is less than 35.00 parts, the stability of the mixture system will be insufficient; if the amount is more than 45.00 parts, it will increase the production and use costs of the product.

[0056] In other words, in this application, amide solvents are mainly used to make the mixture system formed with alcohol ether solvents more stable, so that the photoresist molecules are more uniformly dispersed in the mixture system, thereby increasing the limit of the stripping solution. Considering the price of the materials, the uniformity of the mixture system and the dissolving ability of the photoresist, the amide solvents may, for example, include at least one of formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-(2-hydroxyethyl)acetamide and 3-methoxy-N,N-dimethylpropionamide.

[0057] For reference, the amount of alkanolamines can be 1.00 parts, 2.00 parts, 5.00 parts, 8.00 parts, 10.00 parts, 12.00 parts, 15.00 parts, 18.00 parts or 20.00 parts, or any other value in the range of 1.00 parts to 20.00 parts.

[0058] In some preferred embodiments, the amount of alkanolamine is 2.00 parts to 7.00 parts, such as 2.00 parts, 3.00 parts, 4.00 parts, 5.00 parts, 6.00 parts or 7.00 parts.

[0059] Setting the amount of alkanolamines in the range of 2.00-7.00 parts allows the photoresist to be completely removed. When the amount of alkanolamines is higher than 7.00 parts, although the photoresist can be completely removed from the glass substrate, most alkanolamines are strongly alkaline and will cause some degree of corrosion to the metal film. When the amount of alkanolamines is lower than 2.00 parts, the photoresist cannot be completely removed.

[0060] That is, in this application, alkanolamines are mainly used as stripping agents for photoresists to remove them. Considering both the price of the materials and the stripping ability of the photoresists, alkanolamines may, for example, include at least one of 2-aminoethanol, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N-methyldiethanolamine, N,N-dimethylethanolamine, N,N-diethylaminoethanol, 2-(2-aminoethylamino)-1-ethanol, 1-amino-2-propanol, and 2-amino-1-propanol.

[0061] For reference, the amount of pH adjuster can be 0.10 parts, 0.20 parts, 0.50 parts, 0.80 parts, 1.00 parts, 1.20 parts, 1.50 parts, 1.80 parts or 2.00 parts, or any other value in the range of 0.10 parts to 2.00 parts.

[0062] In some preferred embodiments, the amount of pH adjuster is 0.20-0.80 parts, such as 0.20 parts, 0.30 parts, 0.40 parts, 0.50 parts, 0.60 parts, 0.70 parts or 0.80 parts.

[0063] Setting the amount of pH adjuster in the range of 0.20-0.80 parts can adjust the overall pH value of the photoresist stripping solution to a suitable range, which helps to reduce or avoid corrosion of metal films, especially aluminum.

[0064] In other words, in this application, the pH adjuster is mainly used to adjust the pH value of the photoresist stripping solution system, so as to reduce the alkalinity of the entire photoresist stripping solution system as much as possible within the alkaline range, thereby reducing or avoiding corrosion of the metal film layer, especially aluminum. Considering the buffering capacity of the mixture and the need to maintain the mixture in a weakly alkaline range, the pH adjuster, exemplarily, includes organic acid compounds, and based on corrosion rate considerations, may include at least one of salicylic acid, sodium citrate, sodium acetate, succinic acid, malic acid, and tartaric acid.

[0065] For reference, the amount of metal protectant can be 0.01 parts, 0.02 parts, 0.05 parts, 0.08 parts, 0.10 parts, 0.12 parts, 0.15 parts, 0.18 parts or 0.20 parts, or any other value in the range of 0.01 parts to 0.20 parts.

[0066] In some preferred embodiments, the amount of metal protectant used is 0.05 parts to 1.00 parts, such as 0.05 parts, 0.06 parts, 0.07 parts, 0.08 parts, 0.09 parts or 1.00 parts, etc.

[0067] Setting the amount of metal protectant within the range of 0.05-1.00 parts allows it to adsorb or complex with the metal wiring on the bottom of the substrate during the photoresist stripping process, especially the Ti / Al / Ti layer in the Al process, thus protecting the metal wiring from corrosion by the stripping solution. When the amount of metal protectant is less than 0.05 parts, over time, the metal protectant in the photoresist stripping solution cannot be fully adsorbed onto the bottom metal wiring or form a corrosion-resistant complex with the metal wiring, leading to corrosion of the substrate metal wiring by the photoresist stripping solution. When the amount of metal protectant is greater than 1.00 parts, excessive addition of the protectant will affect the stripping performance of the photoresist stripping solution and cause the physicochemical properties to exceed the standard, resulting in failure to meet the customer's requirements.

[0068] In other words, in this application, the metal protectant is mainly used to form a corrosion-resistant complex with the metal wiring, protecting the metal wiring from corrosion by the stripping fluid. Considering the rate of formation of the corrosion-resistant complex with the metal wiring and the stability of the complex, the metal protectant may, exemplarily, include at least one of aminophenol, toluidine, glycine, thiourea, and L-arginine.

[0069] In some preferred embodiments, the photoresist stripping solution comprises 45.00-65.00 parts of an alcohol ether solvent, 30.00-50.00 parts of an amide solvent, 2.00-7.00 parts of an alkanolamine, 0.20-0.80 parts of a pH adjuster, and 0.05-1.00 parts of a metal protectant.

[0070] In some further preferred embodiments, the photoresist stripping solution includes 50.00-60.00 parts of an alcohol ether solvent, 35.00-45.00 parts of an amide solvent, 2.00-7.00 parts of an alkanolamine, 0.20-0.80 parts of a pH adjuster, and 0.05-1.00 parts of a metal protectant.

[0071] In some other preferred embodiments, the alcohol ether solvent includes diethylene glycol methyl ether; and / or, the amide solvent includes N-methylformamide; and / or, the alkanolamine includes N-methyldiethanolamine; and / or, the pH adjuster includes sodium citrate; and / or, the metal protectant includes L-arginine.

[0072] More preferably, the photoresist stripping solution comprises 45.00-65.00 parts of diethylene glycol methyl ether, 30.00-50.00 parts of N-methylformamide, 2.00-7.00 parts of N-methyldiethanolamine, 0.20-0.80 parts of sodium citrate, and 0.05-1.00 parts of L-arginine.

[0073] Furthermore, the photoresist stripping solution includes 50.00-60.00 parts of diethylene glycol methyl ether, 35.00-45.00 parts of N-methylformamide, 2.00-7.00 parts of N-methyldiethanolamine, 0.20-0.80 parts of sodium citrate, and 0.05-1.00 parts of L-arginine.

[0074] The photoresist stripping solution corresponding to the above preferred solution can provide better protection for the underlying Al metal.

[0075] As mentioned above, the photoresist stripping solution provided in this application is a water-based stripping solution that does not contain environmentally harmful organic solvents. It can effectively inhibit the corrosion of Al metal layers. Furthermore, by using a pH adjuster, it avoids the corrosion problem of metal wiring on glass substrates. At the same time, the components do not contain surfactants, which solves the problem of excessive foaming during the use of the stripping solution.

[0076] Accordingly, this application provides a method for preparing the above-mentioned photoresist stripping solution, which may include, for example, the following steps: mixing the components according to the specified ratio.

[0077] Considering that some impurity particles may exist during the production process, the mixed liquid can be filtered to remove impurity particles or dust.

[0078] Accordingly, this application also provides the application of the above-mentioned photoresist stripping solution, for example, it can be used for the removal of photoresist in the Al process.

[0079] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0080] Example 1

[0081] This embodiment provides a photoresist stripping solution, which, by mass percentage, is obtained by mixing 55.00 parts of diethylene glycol methyl ether, 40.00 parts of N-methylformamide, 5.00 parts of N-methyldiethanolamine, 0.20 parts of sodium citrate, and 0.05 parts of L-arginine.

[0082] Examples 2-6 and Comparative Examples 1-2

[0083] The photoresist stripping solutions provided in Examples 2-6 and Comparative Examples 1-2 have the same composition and preparation method as in Example 1, except that the amount of each component is different, as shown in Table 1.

[0084] Table 1. Component Dosage

[0085] alcohol ether solvents Alkylamine amide solvents pH adjuster Metal protectant Example 1 55.00 5.00 40.00 0.20 0.05 Example 2 55.00 5.00 40.00 0.40 0.05 Example 3 55.00 5.00 40.00 0.60 0.05 Example 4 55.00 5.00 40.00 0.60 0.10 Example 5 55.00 5.00 40.00 0.60 0.20 Example 6 55.00 5.00 40.00 0.80 0.05 Comparative Example 1 55.00 5.00 40.00 / 0.50 Comparative Example 2 55.00 5.00 40.00 / 1.00

[0086] Test case

[0087] The photoresist stripping solutions provided in Examples 1-6 and Comparative Examples 1-2 were subjected to immersion corrosion tests (DIP corrosion tests) in 100 mL beakers for 2 min and 30 min, respectively. After 2 min of corrosion, none of the examples or comparative examples showed significant corrosion of metallic Al. After 30 min of corrosion, the sample surface was rinsed with deionized water within 2 seconds and dried with a nitrogen gun. The corrosion was evaluated using a scanning electron microscope (SEM), and the SEM images are shown below. Figures 1 to 8 As shown.

[0088] Depend on Figures 1 to 8 As can be seen from Examples 1-3 and Example 6, the photoresist stripping solution exhibits good protection for the underlying Al metal as the pH adjuster concentration increases. Examples 3-5 show that the protective effect of the photoresist stripping solution on the underlying Al metal improves with increasing metal protectant concentration. Examples 5 and 6 show that the protective effect on Al decreases when the metal protectant concentration is low; however, when only the metal protectant is used (e.g., Comparative Examples 1 and 2), Al corrosion is more severe. Therefore, adding an appropriate amount of pH adjuster can minimize the alkalinity of the photoresist stripping solution within the alkaline range, thus minimizing or preventing corrosion of Al metal by the photoresist stripping solution. Adding an appropriate amount of metal protectant can form a resilient complex, preventing corrosion of the substrate metal wiring by the photoresist stripping solution.

[0089] In summary, the photoresist stripping solution provided in this application is a water-based stripping solution that does not contain environmentally harmful organic solvents. It can effectively inhibit the corrosion of Al metal layers. Furthermore, by using a pH adjuster, it avoids the corrosion problem of metal wiring on glass substrates. At the same time, the components do not contain surfactants, thus solving the problem of excessive foaming during the use of the stripping solution.

[0090] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A photoresist stripping solution, characterized by comprising: The photoresist stripping solution comprises 45.00-65.00 parts by mass of diethylene glycol methyl ether, 30.00-50.00 parts by mass of N-methyl formamide, 2.00-7.00 parts by mass of N-methyl diethanolamine, 0.20-0.80 parts by mass of sodium citrate, and 0.05-1.00 parts by mass of L-arginine; and the photoresist stripping solution does not contain a surfactant.

2. The photoresist stripping solution of claim 1, wherein The photoresist stripping solution comprises 50.00-60.00 parts by mass of the diethylene glycol methyl ether, 35.00-45.00 parts by mass of the N-methyl formamide, 2.00-7.00 parts by mass of the N-methyl diethanolamine, 0.20-0.80 parts by mass of the sodium citrate, and 0.05-1.00 parts by mass of the L-arginine.

3. The method for producing a photoresist stripping solution according to claim 1 or 2, wherein The photoresist stripping solution comprises 50.00-60.00 parts by mass of the diethylene glycol methyl ether, 35.00-45.00 parts by mass of the N-methyl formamide, 2.00-7.00 parts by mass of the N-methyl diethanolamine, 0.20-0.80 parts by mass of the sodium citrate, and 0.05-1.00 parts by mass of the L-arginine. The photoresist stripping solution is used for removing photoresist in an Al process.

4. The use of a photoresist stripping solution according to claim 1 or 2, wherein the photoresist stripping solution is used for stripping a photoresist after a dry etching process. The photoresist stripping solution is used for removing photoresist in an Al process.

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