Semiconductor structure and method of manufacturing the same
By introducing doped regions and conductive layers into the semiconductor structure to form two variable resistors, the problem of low RRAM storage density is solved, the storage density is improved and the fabrication process is simplified, and the balance between data write and read rates is improved.
CN116437670BActive Publication Date: 2026-07-03CHANGXIN MEMORY TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2021-12-29
- Publication Date
- 2026-07-03
AI Technical Summary
Technical Problem
Existing RRAM memory has a low storage density, which cannot meet the storage capacity and size requirements of integrated circuit technology.
Method used
Introducing first and second doped regions into the semiconductor structure, using a conductive layer and a resistive switching dielectric layer to form two variable resistors that share the same conductive layer, and forming two semiconductor units with the selection transistor, simplifies the fabrication process and reduces the structural size.
Benefits of technology
It increases the storage density of the memory, simplifies the manufacturing process, improves the balance between data write and read rates, and enhances the performance of the memory.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116437670B_ABST
Abstract
The embodiment of the present disclosure relates to a semiconductor structure and a preparation method thereof, the semiconductor structure comprising: a substrate, a first doped region and a second doped region in the substrate, a first selection transistor and a second selection transistor, a conductive layer between the first doped region and the second doped region, a resistive switching dielectric layer, the conductive layer, the first doped region and the resistive switching dielectric layer opposite to the first doped region form a first variable resistor, the conductive layer, the second doped region and the resistive switching dielectric layer opposite to the second doped region form a second variable resistor, and an isolation dielectric layer between the conductive layer and the substrate. The embodiment of the present disclosure is beneficial to improve the storage density of RRAM memory.
Need to check novelty before this filing date? Find Prior Art