A stand-alone continuous process system

Abstract

The present invention provides an independent continuous process system for performing plasma treatment on a process object. The system is sequentially provided with a pre-treatment machine, a first independent process machine, and a terminal independent process machine. The first independent process machine has a process chamber and two valves, the two valves being located on either side of the process chamber. The process chamber is sequentially provided with a first vacuum pumping zone, a plasma treatment zone, and a second vacuum pumping zone, which are interconnected. The terminal independent process machine has a terminal process chamber and a terminal valve, the terminal valve being located on one side of the terminal process chamber. The terminal process chamber is sequentially provided with a first terminal vacuum pumping zone, a terminal plasma treatment zone, and a second terminal vacuum pumping zone, which are interconnected. Thus, the present invention solves the problems of low sputtering quality and high sputtering costs in conventional vacuum sputtering equipment.

Description

Technical Field

[0001] The present invention relates to a process system, and more particularly to an independent continuous process system. Background Art

[0002] Vacuum sputtering technology has been widely applied in semiconductor manufacturing across numerous industries, such as semiconductor manufacturing and optoelectronics. One method of vacuum sputtering is plasma sputtering, which involves dispersing an inert gas, such as argon or neon, between two metal plates with a high potential difference in a high vacuum environment. The inert gas collides with electrons to form a plasma. The inert ions, such as argon and neon, in the plasma are accelerated by the electric field and collide with the target surface. These atoms are then ejected from the target and propagate onto the substrate surface, where they are deposited by the target atoms to form a thin film.

[0003] Existing vacuum sputtering equipment mostly adopts a cluster-type arrangement, and a robotic arm is set at the center to transport objects, pushing or pulling the relevant process carriers into or out of each cluster-type cavity equipment. When moving the process carriers out of the cavity equipment, it is necessary to pay close attention to the cleanliness of the overall environment to avoid dust adhering to the process carriers. Therefore, the above-mentioned vacuum sputtering equipment is usually in a high dust-free environment.

[0004] However, the clustered vacuum sputtering equipment currently available on the market typically requires a significant amount of space. Consequently, maintaining a high-dust-free environment over such a large area increases factory costs, which inevitably leads to higher process costs. Furthermore, the chambers of these vacuum sputtering equipment all require a high vacuum environment, and the airflow stability during pumping significantly impacts sputtering efficiency and quality. Summary of the Invention

[0005] The main purpose of the present invention is to solve the problems of low sputtering quality and high sputtering cost of conventional vacuum sputtering equipment.

[0006] To achieve the above-mentioned objectives, one embodiment of the present invention provides an independent continuous process system for performing plasma treatment on an object to be processed, the independent continuous process system comprising a pre-treatment machine, a first independent process machine, and a terminal independent process machine. The pre-treatment machine pre-treats the object to be processed; the first independent process machine is connected to the pre-treatment machine and receives the object to be processed from the pre-treatment machine; the first independent process machine has a process chamber and two valves, the two valves are respectively arranged on both sides of the process chamber, and the process chamber is sequentially provided with a first vacuum pumping zone, a plasma treatment zone, and a second vacuum pumping zone that are interconnected; the terminal independent process machine is connected to the side of the first independent process machine away from the pre-treatment machine, the terminal independent process machine has a terminal process chamber and a terminal valve, the terminal valve is arranged on the side of the terminal process chamber close to the first independent process machine, and the terminal process chamber is sequentially provided with a first terminal vacuum pumping zone, a terminal plasma treatment zone, and a second terminal vacuum pumping zone that are interconnected.

[0007] In another embodiment of the present invention, the first independent process machine also includes a first vacuum pumping module and a second vacuum pumping module, the first vacuum pumping module corresponds to the position of the first vacuum pumping area and is connected to the first vacuum pumping area, and the second vacuum pumping module corresponds to the position of the second vacuum pumping area and is connected to the second vacuum pumping area; the terminal independent process machine also includes a first terminal vacuum pumping module and a second terminal vacuum pumping module, the first terminal vacuum pumping module corresponds to the position of the first terminal vacuum pumping area and is connected to the first terminal vacuum pumping area, and the second terminal vacuum pumping module corresponds to the position of the second terminal vacuum pumping area and is connected to the second terminal vacuum pumping area.

[0008] In another embodiment of the present invention, the terminal process chamber is in a closed state on the other side than the terminal valve.

[0009] In another embodiment of the present invention, the first vacuum pumping module and the second vacuum pumping module are disposed on the top surface of the first independent process machine; the first terminal vacuum pumping module and the second terminal vacuum pumping module are disposed on the top surface of the terminal independent process machine.

[0010] In another embodiment of the present invention, the plasma processing area and the terminal plasma processing area each have a sputtering module, the sputtering module has a target material, the process chamber and the terminal process chamber each have a transport module for moving the object to be processed, the transport module performs horizontal movement of the object to be processed along an X-axis direction, and the length of the target material in the horizontal plane and perpendicular to the X-axis direction is greater than the length of the object to be processed in the horizontal plane and perpendicular to the X-axis direction.

[0011] In another embodiment of the present invention, the process chamber and the terminal process chamber respectively have a top cover, which is respectively arranged on the top surface of the process chamber and the terminal process chamber. The top cover is respectively located between the first vacuum pumping module and the second vacuum pumping module and between the first terminal vacuum pumping module and the second terminal vacuum pumping module, and the top cover can be opened selectively.

[0012] In another embodiment of the present invention, the valve and the terminal valve are of a vertical up and down switch type, and the valve and the terminal valve are in a normally closed state.

[0013] In another embodiment of the present invention, a second independent process machine is further included. The second independent process machine is connected between the first independent process machine and the terminal independent process machine.

[0014] Thus, the process chamber and the terminal process chamber of the present invention both have two groups of vacuum pumping areas and vacuum pumping modules interconnected with the vacuum pumping areas, so that the interior of the process chamber can be created into a high vacuum environment in a short time. Moreover, the vacuum pumping areas and the vacuum pumping modules are both symmetrically arranged, thereby solving the problem of the plasma process chamber affecting the sputtering quality due to the uneven internal airflow environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A three-dimensional schematic diagram of a stand-alone continuous process system according to an embodiment of the present invention;

[0016] Figure 2 A schematic front perspective view of a stand-alone continuous process system according to an embodiment of the present invention;

[0017] Figure 3 is a schematic three-dimensional top view of a stand-alone continuous process system according to an embodiment of the present invention;

[0018] Figure 4 This is a cross-sectional schematic diagram of a process chamber or a terminal process chamber according to an embodiment of the present invention, used to illustrate the internal partitioning of the process chamber or the terminal process chamber;

[0019] Figure 5 This is a schematic cross-sectional view of another side of the process chamber or terminal process chamber according to an embodiment of the present invention, used to indicate that the length of the target in the horizontal plane and perpendicular to the X-axis is greater than the length of the object to be processed in the horizontal plane and perpendicular to the X-axis.

[0020] In the figure: 100, independent continuous process system; 200, object to be processed;

[0021] 10. Pre-processing machine; 20. First independent process machine;

[0022] 21. Process chamber; 211. First vacuum pumping zone;

[0023] 212, plasma processing area; 213, second vacuum pumping area;

[0024] 22. Valve; 23. First vacuum pumping module;

[0025] 24. Second vacuum pumping module; 30. Terminal independent process machine;

[0026] 31. Terminal process chamber; 311. First terminal vacuum pumping area;

[0027] 312, terminal plasma processing area; 313, second terminal vacuum pumping area;

[0028] 32. Terminal valve; 33. First terminal vacuum pumping module;

[0029] 34. Second terminal vacuum pumping module; 40. Sputtering module;

[0030] 41. Target material; 50. Transport module;

[0031] 60. Top cover; 70. Second independent process machine;

[0032] L1, length; L2, length. DETAILED DESCRIPTION

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0034] See also Figures 1 to 5 FIG. 1 shows a standalone continuous process system 100 according to an embodiment of the present invention, which is used to perform plasma treatment on an object 200 to be processed. The standalone continuous process system 100 includes a pre-processing tool 10, a first independent process tool 20, and a terminal independent process tool 30. The object 200 to be processed can be a semiconductor wafer, a circuit board, a flexible circuit board, a composite substrate, or the like.

[0035] The pre-treatment machine 10 is used to pre-treat the object 200. The pre-treatment is a process before the plasma treatment of the object 200, such as heating, cleaning the surface of the object 200, and preliminary vacuuming.

[0036] The first independent process tool 20 is connected to the pre-processing tool 10 and receives the object 200 to be processed from the pre-processing tool 10. The first independent process tool 20 has a process chamber 21 and two valves 22, one located on either side of the process chamber 21. The process chamber 21 is sequentially provided with a first vacuum pumping zone 211, a plasma processing zone 212, and a second vacuum pumping zone 213, which are interconnected. The valves 22 are vertically openable and normally closed. The vertically openable design of the valves 22 allows the valves 22 to remain closed while repairs are being performed on the interior of the first independent process tool 20, thus preventing interference with the operation of other adjacent process tools.

[0037] like Figures 1 to 5 As shown, in the embodiment of the present invention, the first independent process machine 20 includes a first vacuum pumping module 23 and a second vacuum pumping module 24. The first vacuum pumping module 23 corresponds to the position of the first vacuum pumping area 211 and is connected to the first vacuum pumping area 211; the second vacuum pumping module 24 corresponds to the position of the second vacuum pumping area 213 and is connected to the second vacuum pumping area 213. In this embodiment, the first vacuum pumping module 23 and the second vacuum pumping module 24 are arranged on the top surface of the first independent process machine 20. Figure 4 As shown, the first vacuum pumping area 211 and the second vacuum pumping area 213 are symmetrically arranged, so the first vacuum pumping module 23 and the second vacuum pumping module 24 can quickly pump air inside the process chamber 21 and improve the uniformity of vacuum pumping, so that the plasma processing area 212 located in the middle can stably perform plasma cleaning, etching and other related plasma processing processes.

[0038] The terminal independent process machine 30 is connected to the side of the first independent process machine 20 away from the pretreatment machine 10. It comprises a terminal process chamber 31 and a terminal valve 32. The terminal valve 32 is located on the side of the terminal process chamber 31 near the first independent process machine 20. The terminal process chamber 31 is sequentially interconnected with a first terminal vacuum pumping zone 311, a terminal plasma treatment zone 312, and a second terminal vacuum pumping zone 313. In this embodiment, the terminal process chamber 31 is closed on the side opposite to the terminal valve 32. The terminal valve 32 is designed to open and close vertically. This allows the terminal valve 32 to remain closed during repairs to the terminal independent process machine 30, preventing interference with the operation of other adjacent process machines. Depending on the application, an outlet (not shown) can also be provided on the side of the terminal process chamber 31 opposite to the terminal valve 32, allowing the object 200 to be removed from the outlet.

[0039] like Figures 1 to 5As shown, in the embodiment of the present invention, the terminal independent process machine 30 includes a first terminal vacuum pumping module 33 and a second terminal vacuum pumping module 34. The first terminal vacuum pumping module 33 corresponds to the position of the first terminal vacuum pumping area 311 and is connected to the first terminal vacuum pumping area 311; the second terminal vacuum pumping module 34 corresponds to the position of the second terminal vacuum pumping area 313 and is connected to the second terminal vacuum pumping area 313, and the first terminal vacuum pumping module 33 and the second terminal vacuum pumping module 34 are arranged on the top surface of the terminal independent process machine 30. Figure 4 As shown, the first terminal vacuum pumping area 311 and the second terminal vacuum pumping area 313 are symmetrically arranged, so the first terminal vacuum pumping module 33 and the second terminal vacuum pumping module 34 can quickly pump air inside the terminal process chamber 31 and improve the uniformity of vacuum pumping.

[0040] Furthermore, in the embodiment of the present invention, the plasma processing area 212 and the terminal plasma processing area 312 each have a sputtering module 40; the process chamber 21 and the terminal process chamber 31 each have a transport module 50 for moving the object 200 to be processed and a top cover 60. Figure 4 As shown, the sputtering module 40 has a target 41; the transport module 50 moves the object 200 to be processed horizontally along an X-axis direction, and please refer to Figure 5 As shown, the length L1 of the target 41 in the horizontal plane perpendicular to the X-axis is greater than the length L2 of the object 200 in the horizontal plane perpendicular to the X-axis, thereby achieving complete coverage of the plasma range and preventing unevenness in the plasma treatment of the object 200. The transport module 50 transports the object 200 horizontally along the X-axis from the pre-treatment machine 10 to the terminal independent process machine 30 for plasma treatment of the object 200. After the process of the object 200 is completed, the transport module 50 transports the completed object 200 horizontally along the X-axis from the terminal independent process machine 30 back to the pre-treatment machine 10.

[0041] Among them, the process sequence of the object to be processed 200 is: (1) the pre-treatment machine 10 performs a process on the object to be processed 200 before the plasma treatment process, such as heating, cleaning the surface of the object to be processed 200, and preliminary vacuuming, etc.; (2) after the object to be processed 200 completes the pre-treatment of the pre-treatment machine 10, the object to be processed 200 enters the interior of the process chamber 21, and the first vacuum pumping module 23 and the second vacuum pumping module 24 pump air into the process chamber 21 to create a high vacuum environment inside the process chamber 21. Afterwards, the sputtering module 40 of the plasma treatment area 212 performs plasma treatment on the object to be processed 200, and because gas will be input during the plasma treatment process, the first vacuum pumping module 23 and the second vacuum pumping module 24 will continue to pump air during the plasma treatment time to maintain The internal vacuum degree of the process chamber 21 also maintains a stable airflow inside the process chamber 21; (3) After the process object 200 completes the process treatment in the plasma treatment zone 212, the process object 200 enters the terminal process chamber 31 and repeats the above-mentioned procedure in the process chamber 21. The first terminal vacuum exhaust module 33 and the second terminal vacuum exhaust module 34 exhaust the terminal process chamber 31 to create a high vacuum environment inside the terminal process chamber 31. After that, the sputtering module 40 of the terminal plasma treatment zone 312 performs the final plasma treatment on the process object 200. The repeated steps will not be described separately; (4) After the process object 200 completes the process treatment in the terminal plasma treatment zone 312, in this embodiment, it is transported back to the exit of the pretreatment machine 10 to continue the process of the next process object 200.

[0042] The top cover 60 is provided on the top surface of the process chamber 21 and the terminal process chamber 31, and is located between the first vacuum pumping module 23 and the second vacuum pumping module 24, and between the first terminal vacuum pumping module 33 and the second terminal vacuum pumping module 34, respectively. The top cover 60 can be selectively opened. When the interior of the process chamber 21 or the terminal process chamber 31 requires maintenance, maintenance personnel only need to open the top cover 60 to perform maintenance on the interior of the process chamber 21 or the terminal process chamber 31. As described above, since the valve 22 and the terminal valve 32 are independently provided, the process machine maintains its independence from other chambers when performing repairs inside the chamber, avoiding affecting the operation of other adjacent process machines without requiring the entire machine to be shut down for processing.

[0043] In addition, if Figures 1 to 3As shown, in the embodiment of the present invention, the independent continuous process system 100 further includes a second independent process machine 70, which is connected between the first independent process machine 20 and the terminal independent process machine 30. The structure of the second independent process machine 70 is the same as that of the first independent process machine 20. The number of the second independent process machines 70 can be adjusted according to the needs of the user. For example, Figures 1 to 3 As shown, in the embodiment of the present invention, the number of the second independent process tool 70 is one. In other embodiments, the number of the second independent process tool 70 can also be zero or more than two.

[0044] Thus, the present invention has the following advantages:

[0045] 1. The process chamber 21 and the terminal process chamber 31 of the present invention both have two sets of vacuum pumping zones and vacuum pumping modules interconnected with the vacuum pumping zones, thereby creating a high vacuum environment inside the process chamber in a short period of time. Moreover, the vacuum pumping zones and the vacuum pumping modules are symmetrically arranged, thereby resolving the problem of poor airflow uniformity inside the process chamber due to pumping, which affects the coating process.

[0046] 2. The process machines of the present invention operate independently and have their own independent valve settings. Therefore, when one of the process machines is undergoing maintenance, the other process machines can continue to process the object 200 to be processed.

[0047] 3. The valve 22 and the terminal valve 32 of the present invention are designed to open and close vertically. This allows the valve 22 or the terminal valve 32 to remain closed during repairs to the interior of the chamber of the first independent process tool 20 or the terminal independent process tool 30, thereby preventing the operation of other adjacent process tools from being affected.

[0048] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0049] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A stand-alone continuous process system, characterized in that: The stand-alone continuous process system is used to perform plasma processing on an object to be processed, and the stand-alone continuous process system includes: A pre-processing machine for pre-processing the object to be processed; a first independent process tool connected to the pre-treatment tool and receiving the object to be processed from the pre-treatment tool, the first independent process tool having a process chamber and two valves, the two valves being respectively disposed on either side of the process chamber, the process chamber being sequentially provided with a first vacuum pumping area, a plasma processing area, and a second vacuum pumping area, which are interconnected. The first independent process tool also includes a first vacuum pumping module and a second vacuum pumping module, the first vacuum pumping module being located at a position corresponding to the first vacuum pumping area and being in communication with the first vacuum pumping area, the second vacuum pumping module being located at a position corresponding to the second vacuum pumping area and being in communication with the second vacuum pumping area, the first vacuum pumping area and the second vacuum pumping area being symmetrically disposed; and A terminal independent process machine, which is connected to the side of the first independent process machine away from the pretreatment machine, and has a terminal process chamber and a terminal valve, which is arranged on the side of the terminal process chamber close to the first independent process machine. The terminal process chamber is sequentially provided with a first terminal vacuum pumping area, a terminal plasma processing area and a second terminal vacuum pumping area that are interconnected. The terminal independent process machine also includes a first terminal vacuum pumping module and a second terminal vacuum pumping module. The first terminal vacuum pumping module corresponds to the position of the first terminal vacuum pumping area and is connected to the first terminal vacuum pumping area. The second terminal vacuum pumping module corresponds to the position of the second terminal vacuum pumping area and is connected to the second terminal vacuum pumping area. The first terminal vacuum pumping area and the second terminal vacuum pumping area are symmetrically arranged.

2. The independent continuous process system according to claim 1, characterized in that: The terminal process cavity is different from the other side of the terminal valve and is in a closed state.

3. The independent continuous process system according to claim 1, characterized in that: The first vacuum pumping module and the second vacuum pumping module are arranged on the top surface of the first independent process machine; the first terminal vacuum pumping module and the second terminal vacuum pumping module are arranged on the top surface of the terminal independent process machine.

4. The independent continuous process system according to claim 3, characterized in that: The plasma processing area and the terminal plasma processing area respectively have a sputtering module, and the sputtering module has a target material. The process chamber and the terminal process chamber respectively have a transport module for moving the object to be processed. The transport module horizontally moves the object to be processed along an X-axis direction. The length of the target material in the horizontal plane and perpendicular to the X-axis direction is greater than the length of the object to be processed in the horizontal plane and perpendicular to the X-axis direction.

5. The independent continuous process system according to claim 3, characterized in that: The process chamber and the terminal process chamber respectively have a top cover, which is respectively arranged on the top surface of the process chamber and the terminal process chamber. The top cover is respectively located between the first vacuum pumping module and the second vacuum pumping module and between the first terminal vacuum pumping module and the second terminal vacuum pumping module. The top cover can be selectively opened.

6. The independent continuous process system according to claim 1, characterized in that: The valve and the terminal valve are of vertical up and down switching type, and the valve and the terminal valve are in a normally closed state.

7. The independent continuous process system according to claim 1, characterized in that: The system further comprises a second independent process machine, wherein the second independent process machine is connected between the first independent process machine and the terminal independent process machine.

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